Method for testing and verifying high-voltage life of GaN HEMT (high electron mobility transistor) grid
By building a high-precision testing system and data analysis model, the problem of long gate reliability verification cycle of GaN HEMT was solved, rapid lifetime testing was achieved, efficiency was improved and costs were reduced, and a reliable predictive model was provided for device design optimization.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SHANGHAI XINCAN ELECTRONIC TECH CO LTD
- Filing Date
- 2026-01-29
- Publication Date
- 2026-04-17
AI Technical Summary
In existing technologies, the gate reliability verification cycle of GaN HEMT devices is too long, making it impossible to quickly obtain gate lifetime data, which affects R&D efficiency and increases costs.
A test system was built using high-precision test circuits and HTGB aging equipment. By combining high-temperature accelerated aging and gradient gate bias, and through testing multiple sets of parallel samples and data analysis using JMP software and the Weibull distribution model, the high-voltage lifetime of GaN HEMT gates was quickly verified.
It shortens the verification cycle, improves verification efficiency, reduces costs, and provides strong support for design optimization by predicting the lifetime of GaN HEMT gates through accurate failure time data and lifetime acceleration models.
Smart Images
Figure CN121878415A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the technical field of semiconductor testing, and in particular to a method for verifying the high-voltage lifetime test of a GaN HEMT gate. Background Technology
[0002] In recent years, GaN HEMT devices have demonstrated enormous application potential in power devices, microwave devices, and other fields due to their superior performance, such as high frequency, high power, and fast switching speed, becoming a research and application hotspot in the semiconductor field. However, gate reliability issues have long constrained the large-scale commercial application of GaN HEMT devices, especially since the lifetime degradation mechanism of the gate under high voltage stress has not been fully understood.
[0003] The gate of a GaN HEMT typically uses a Schottky contact (p-GaN gate). Unlike silicon-based MOSFETs, it lacks a PN junction to share the electric field. When the gate voltage exceeds the threshold voltage (typically 6-8V), the Schottky barrier decreases, causing electrons to tunnel into the barrier layer, forming a gate-drain leakage current path. This accelerates interface trap charging, ultimately causing threshold voltage drift and leading to device reliability failure.
[0004] Currently, the industry generally uses the HTGB experiment to verify the gate reliability of GaN HEMTs. This experiment must follow the Jedec standard, and the complete experimental verification process takes up to 1,000 hours. This results in an excessively long verification cycle, which cannot meet the needs of quickly obtaining gate lifetime data and optimizing the design in a timely manner during device development. This seriously affects development efficiency and increases development costs. Summary of the Invention
[0005] To address the aforementioned technical problems, this application provides a GaN HEMT gate high-voltage lifetime testing and verification method, employing the following technical solution: A method for verifying the high-voltage lifetime of a GaN HEMT gate includes the following steps: A testing system is set up, which includes test circuits and HTGB professional aging equipment; GaN HEMT samples were selected and divided into multiple groups, with the same number of samples in each group. All samples were mounted on the test motherboard and placed in a high-temperature aging chamber. Different gate bias voltages were applied to the GS terminals of each sample within a specified voltage range through the test circuit. The DS terminals of the samples were shorted, and the leakage current of each sample was monitored in real time through the sampling resistor. When the leakage current of any sample exceeds the limit, the sample is deemed to have failed, and the failure time of the sample is recorded by the leakage current over-limit monitoring system. Failure time data of all samples were collected, and the failure time data were fitted using data analysis software combined with a specific distribution model to obtain an accelerated life model. The lifetime acceleration model is used to predict the lifetime of GaN HEMT gates and optimize gate design.
[0006] By adopting the above technical solution and building a test system that includes high-precision test circuits and professional HTGB aging equipment, combined with high-temperature accelerated aging and gradient gate bias application test methods, the problem of excessively long traditional HTGB test cycles is effectively solved, enabling rapid verification of the high-voltage lifetime of GaN HEMT gates. At the same time, through multiple sets of parallel sample tests and data analysis using JMP software combined with the Weibull distribution model, the accuracy of failure time data and the fitting effect of the lifetime acceleration model are ensured. The obtained lifetime acceleration model can reliably predict the lifetime of GaN HEMT gates in actual use, providing strong support for gate design optimization.
[0007] Optionally, the test circuit includes a DC power supply, a voltage regulator circuit, and a sampling circuit. The sampling circuit is equipped with a sampling resistor. The HTGB professional aging equipment includes a high-temperature aging chamber, a test motherboard, a DC voltage source, and a leakage current over-limit monitoring system.
[0008] Optionally, the ripple voltage fluctuation of the voltage regulation circuit is not higher than 0.001V.
[0009] Optionally, the high-temperature aging chamber provides a high-temperature environment of 125°C.
[0010] Optionally, the sample mentioned in the step is a GaN HEMT chip with 5 lots, each lot containing 10 chips, for a total of 50 samples, divided into 5 groups of 10 samples each; the applied gate bias voltages are 6.5V, 7.1V, 7.3V, 7.5V and 7.7V respectively.
[0011] Optionally, the sample's DS terminal can be shorted through internal circuitry to eliminate interference from the DS terminal signal to the gate test.
[0012] Optionally, the leakage over-limit monitoring system issues an alarm when a sample fails and simultaneously records the failure time of the sample.
[0013] Optionally, the data analysis software mentioned in the steps is JMP software, and the specific distribution model is the Weibull distribution model. The failure time data is fitted by drawing a Weibull distribution map.
[0014] In summary, this application includes at least one of the following beneficial technical effects: This application effectively solves the problem of excessively long experimental cycles in traditional HTGB by constructing a test system that includes high-precision test circuits and professional HTGB aging equipment. It combines high-temperature accelerated aging with gradient gate bias application, achieving rapid verification of the high-voltage lifetime of GaN HEMT gates. Furthermore, by using multiple parallel sample tests and data analysis with JMP software and the Weibull distribution model, the accuracy of failure time data and the fitting effect of the lifetime acceleration model are ensured. The obtained lifetime acceleration model can reliably predict the lifespan of GaN HEMT gates in actual use, providing strong support for gate design optimization. In addition, this method does not require additional complex equipment, shortening the test cycle while reducing experimental equipment and time investment, lowering R&D and production costs, and improving verification efficiency. It has significant practical value and promotional significance. Attached Figure Description
[0015] Figure 1 This is a flowchart illustrating the high-voltage lifetime test verification method for GaN HEMT gates in this application. Figure 2 This is a schematic diagram of the test circuit in this application; Figure 3 This is a schematic diagram of the test system setup in this application; Figure 4 This is a schematic diagram of the lifetime acceleration model of the GaN HEMT sample in this application. Detailed Implementation
[0016] The embodiments of this application are described in detail below, and examples of the embodiments are shown in the accompanying drawings.
[0017] In the description of this specification, the references to "certain embodiments," "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples" refer to specific features, structures, materials, or characteristics described in connection with the described embodiment or example, which are included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.
[0018] This application discloses a method for testing and verifying the high-voltage lifetime of a GaN HEMT gate, referring to... Figures 1-3 As shown, it includes the following steps: A test system is set up, which includes a test circuit and an HTGB professional aging equipment. The test circuit consists of a DC power supply, a voltage regulator circuit and a sampling circuit. The sampling circuit is equipped with a sampling resistor. The HTGB professional aging equipment includes a high-temperature aging chamber, a test motherboard, a DC voltage source and a leakage current over-limit monitoring system. GaN HEMT samples were selected, which consisted of 5 lots of GaN HEMT chips, with 10 chips in each lot, for a total of 50 chips. These chips were then divided into 5 groups of 10 chips each. All GaN HEMT chips in each group are mounted on the test motherboard. The test motherboard is then placed in a high-temperature aging chamber. The DC power supply of the test circuit works in conjunction with the DC voltage source of the HTGB professional aging equipment to apply a specific gate bias voltage to the GS terminal of each group of chips. At the same time, the DS terminals of all chips are shorted through the internal circuit. The leakage current change of each group of chips is monitored in real time through the sampling resistor of the sampling circuit. A preset leakage current over-limit value is set. When the leakage current of any chip reaches this over-limit value, the chip is determined to be faulty. The leakage current over-limit monitoring system will automatically issue an alarm and record the failure time of the chip. We continuously completed the testing of all chips, collected failure time data for each chip in 5 groups, used JMP data analysis software, combined with the Weibull distribution model to perform lifetime analysis on the collected failure time data, and obtained the lifetime acceleration model of GaN HEMT gate by plotting the Weibull distribution map. The lifetime acceleration model is used to predict the lifetime of GaN HEMT gates under actual operating conditions, and the design of GaN HEMT gates is optimized based on the model.
[0019] The ripple voltage fluctuation of the voltage regulation circuit is no higher than 0.001V, which can ensure the stability of the gate bias voltage applied to the GS terminal of the chip and avoid voltage fluctuations from interfering with the test results. The high temperature aging chamber provides a high temperature environment of 125℃, which can effectively accelerate the gate aging process and shorten the test cycle. As shown in the table below, the specific gate bias voltages applied in the steps are 6.5V, 7.1V, 7.3V, 7.5V and 7.7V, respectively. This set of gradient bias voltages is all near the GaN HEMT gate threshold voltage (6-8V), which can accurately reflect the gate lifetime degradation law under different high voltage stresses.
[0020] like Figure 4As shown, the failure time (leakage current exceeding the limit) of each chip in each group was recorded. After obtaining the failure time data under different voltage levels, lifetime analysis was performed using JMP, and a lifetime acceleration model was obtained through the Weibull distribution plot.
[0021] Although embodiments of this application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting this application. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of this application.
Claims
1. A method for verifying the high-voltage lifetime of a GaN HEMT gate, characterized in that, Includes the following steps: A testing system is set up, which includes test circuits and HTGB professional aging equipment; GaN HEMT samples were selected and divided into multiple groups, with the same number of samples in each group. All samples were mounted on the test motherboard and placed in a high-temperature aging chamber. Different gate bias voltages were applied to the GS terminals of each sample within a specified voltage range through the test circuit. The DS terminals of the samples were shorted, and the leakage current of each sample was monitored in real time through the sampling resistor. When the leakage current of any sample exceeds the limit, the sample is deemed to have failed, and the failure time of the sample is recorded by the leakage current over-limit monitoring system. Failure time data of all samples were collected, and the failure time data were fitted using data analysis software combined with a specific distribution model to obtain an accelerated life model. The lifetime acceleration model is used to predict the lifetime of GaN HEMT gates and optimize gate design.
2. The GaN HEMT gate high-voltage lifetime test verification method according to claim 1, characterized in that, The test circuit includes a DC power supply, a voltage regulator circuit, and a sampling circuit. The sampling circuit is equipped with a sampling resistor. The HTGB professional aging equipment includes a high-temperature aging chamber, a test motherboard, a DC voltage source, and a leakage current over-limit monitoring system.
3. The GaN HEMT gate high-voltage lifetime test verification method according to claim 1, characterized in that, The ripple voltage fluctuation of the voltage regulation circuit is no higher than 0.001V.
4. The GaN HEMT gate high-voltage lifetime test verification method according to claim 1, characterized in that, The high-temperature aging chamber provides a high-temperature environment of 125°C.
5. The GaN HEMT gate high-voltage lifetime test verification method according to claim 1, characterized in that, The samples mentioned in the steps are GaN HEMT chips with 5 lots, each lot containing 10 chips, for a total of 50 samples, divided into 5 groups of 10 samples each; the applied gate bias voltages are 6.5V, 7.1V, 7.3V, 7.5V and 7.7V respectively.
6. The GaN HEMT gate high-voltage lifetime test verification method according to claim 1, characterized in that, The DS terminal of the sample is shorted through an internal circuit to eliminate interference from the DS terminal signal to the gate test.
7. The GaN HEMT gate high-voltage lifetime test verification method according to claim 1, characterized in that, The leakage over-limit monitoring system issues an alarm when a sample fails and simultaneously records the failure time of the sample.
8. The GaN HEMT gate high-voltage lifetime test verification method according to claim 1, characterized in that, The data analysis software mentioned in the steps is JMP software, and the specific distribution model is the Weibull distribution model. The failure time data is fitted by drawing a Weibull distribution map.