Chip high and low temperature impact cycle test method and device

Abstract

The invention discloses a chip high and low temperature impact cycle test method and device, and the method comprises the steps: S1, placing a chip in a vacuum high temperature environment, and maintaining the chip at a first temperature; s2, transferring the chip from the high-temperature environment to a low-temperature environment with a preparation low temperature lower than a second temperature until the chip is cooled to the second temperature; s3, transferring the chip from the high-temperature environment to a high-temperature environment with a preparation high temperature higher than the first temperature, and keeping the chip at the first temperature; and S4, repeatedly executing the steps S2 to S3 until a preset cycle index is reached. By adopting an intelligent compensation strategy of the preparatory high temperature and the preparatory low temperature, it is guaranteed that the temperature of the workpiece disc rapidly and accurately reaches the target temperature in a mode close to natural heat balance, the requirement for real-time and high-power dynamic compensation of a heater or a refrigerating machine is reduced, and thermal control energy consumption is reduced. And in combination with the temperature feedback adjustment design in the high and low temperature chamber, the workpiece disc can smoothly and accurately reach and be stabilized at the set temperature.

Description

Technical Field

[0001] This invention relates to the field of chip testing technology, and in particular to a method and apparatus for high and low temperature shock cycle testing of chips. Background Technology

[0002] As the core component of modern electronic devices, the reliability of chips directly determines the stability and lifespan of the entire system. High and low temperature shock testing is a key method for evaluating the reliability of chips under extreme temperature changes, and it is widely used in fields with extremely high reliability requirements, such as automotive electronics, aerospace, and industrial control. The core of this test lies in simulating the drastic temperature changes that chips may encounter in actual use. By accelerating temperature stress cycling, it exposes potential failures caused by mismatches in the thermal expansion coefficients of materials and manufacturing defects, such as bond wire breakage, solder ball cracking, delamination, and metal layer fatigue.

[0003] At present, the high and low temperature impact testing equipment commonly used in the industry is mainly divided into two categories: two-chamber type and three-chamber type. Although these devices meet the basic testing requirements, in practical applications, especially in testing scenarios that pursue high efficiency, low consumption and high precision, there are still several technical problems with the testing methods: (1) High system energy consumption: In the process of temperature conversion, in order to compensate for heat loss, the equipment needs to continuously heat or cool at high power, which leads to an increase in overall energy consumption; (2) Insufficient temperature control accuracy: In the process of rapid temperature change, since the temperature control system parameters are not optimized for high dynamic heat load changes, the response is lagging, which easily leads to the actual temperature exceeding the target range (overshoot) or failing to reach the set temperature in time (undershoot), which seriously affects the accuracy and repeatability of the test conditions. Summary of the Invention

[0004] To address the technical problems existing in the background art, this invention proposes a method and apparatus for high and low temperature shock cycle testing of chips.

[0005] This invention proposes a method for high and low temperature shock cycling testing of chips, comprising: S1. Place the chip in a vacuum high-temperature environment and keep the chip at the first temperature; S2. Transfer the chip from a high-temperature environment to a vacuum environment at a pre-low temperature that is lower than the second temperature, until the chip cools down to the second temperature, and keep the chip at the second temperature. S3. Transfer the chip from the high-temperature environment back to the pre-high-temperature environment with a temperature higher than the first temperature, and keep the chip at the first temperature. The pre-high temperature / pre-low temperature is achieved by heating / cooling the carrier of the chip in the high-temperature environment / low-temperature environment to the first compensation temperature / second compensation temperature. The first compensation temperature / second compensation temperature is obtained by thermal balance calculation using the heat capacity value of the carrier and the heat change value caused by the chip on it switching between the first temperature and the second temperature as parameters. S4. Repeat S2 to S3 until the preset number of cycles is reached, then measure and output the fatigue strength of the chip after the preset number of cycles is reached.

[0006] Preferably, the carrier includes a heat-conducting plate and a workpiece tray; the step of keeping the chip at the first temperature specifically involves: placing the workpiece tray containing the chip on the heat-conducting plate in a high-temperature environment; controlling the heater integrated in the heat-conducting plate to operate, and monitoring the chip temperature in real time through a temperature sensor in a high-temperature environment, and feeding back the monitored temperature to the temperature control system, wherein the temperature control system dynamically adjusts the power of the heater according to the difference between the feedback temperature and the first temperature, so that the chip heats up and stabilizes at the first temperature.

[0007] Preferably, the preheating temperature is achieved by preheating the heat-conducting plate to a first compensation temperature higher than the first temperature; the first compensation temperature is obtained by using the heat capacity of the heat-conducting plate, the heat absorbed by the workpiece plate and the chip it carries as a parameter when it rises from the second temperature to the first temperature, and by performing a first thermal balance calculation, so that when the workpiece plate at the second temperature is placed on the heat-conducting plate and thermal balance is reached, the temperatures of the heat-conducting plate and the workpiece plate together reach the first temperature.

[0008] Preferably, the first thermal balance calculation specifically involves: determining a basic compensation temperature value based on the ratio of the heat capacity of the heat-conducting plate to the total heat capacity of the workpiece disk and the chip it carries; obtaining actual heat loss parameters based on the temperature drop curve fitting of the high-temperature environment in historical test cycles; correcting the basic compensation temperature value to obtain the first compensation temperature.

[0009] Preferably, the carrier further includes a cold-conducting plate; the step of keeping the chip at the second temperature specifically involves: placing a workpiece tray containing the chip on the cold-conducting plate in a low-temperature environment; controlling the operation of a refrigerator connected to the bottom of the cold-conducting plate, and monitoring the chip temperature in real time through a temperature sensor in the low-temperature environment, and feeding back the monitored temperature to the temperature control system, wherein the temperature control system dynamically adjusts the power of the refrigerator according to the difference between the feedback temperature and the second temperature, so that the chip cools down and stabilizes at the second temperature.

[0010] Preferably, the pre-low temperature is achieved by pre-cooling the cold-conducting plate in the low-temperature environment to a second compensation temperature lower than the second temperature. The cold-conducting plate is thermally connected to the cold head of the refrigerator that extends into the low-temperature environment. The second compensation temperature is obtained by calculating the heat capacity of the cold-conducting plate and the heat released by the workpiece plate and the chip it carries from the first temperature to the second temperature through a second thermal balance calculation, so that when the workpiece plate at the first temperature is placed on the cold-conducting plate and thermal balance is reached, the temperature of the cold-conducting plate and the workpiece plate together reach the second temperature.

[0011] Preferably, the second thermal balance calculation specifically involves: determining a basic compensation temperature value based on the ratio of the heat capacity of the cooling plate to the total heat capacity of the workpiece disk and the chip it carries; obtaining actual heat loss parameters based on the temperature rise curve fitting of the low-temperature environment in historical test cycles; correcting the basic compensation temperature value to obtain the second compensation temperature.

[0012] Preferably, it also includes a parameter adaptive adjustment process applied in the S2 to S3 loop, the parameter adaptive adjustment process being divided into an initialization step, an initial correction step, and an iterative correction step; The initialization step specifically involves: before the first cycle, based on the nominal heat capacity of the workpiece plate, the cold plate, and the heat plate, calculating the initial high temperature and low temperature through thermal balance. The first correction step is as follows: based on the actual temperature change data of the workpiece disk in the first cycle, it is compared with the theoretical curve predicted by the nominal heat capacity. Based on the comparison result, the first updated total heat capacity value of the workpiece disk and the chip it carries is obtained and stored through the parameter inversion algorithm, and the first updated total heat capacity value is used for the pre-high temperature and pre-low temperature calculations of the second cycle. The iterative correction step is as follows: Based on the actual temperature change data of the Mth cycle, compare it with the theoretical curve predicted by the total heat capacity value updated in the (M-1)th cycle. Based on the comparison result, update the stored total heat capacity value through the parameter inversion algorithm and use it for the preliminary high temperature and preliminary low temperature calculations of the (M+1)th cycle, where M is a natural number greater than or equal to 2.

[0013] The present invention also provides a chip testing device that applies the above-described high and low temperature shock cycle testing method for chips.

[0014] This invention employs an intelligent compensation strategy of "prepared high temperature" and "prepared low temperature" (based on thermal balance calculation and correction), ensuring that the heat-conducting plate and cold-conducting plate store or release the exact required heat / cold energy before the workpiece tray is transferred. This allows the workpiece tray temperature to quickly and accurately reach the target temperature in a manner close to natural thermal equilibrium, significantly reducing the need for real-time, high-power dynamic compensation of heaters or refrigerators, and lowering energy consumption in the thermal control process. Combined with the temperature feedback regulation design within the high and low temperature chambers, the workpiece tray can smoothly and accurately reach and stabilize at the set temperature, eliminating overshoot and oscillations caused by traditional "catch-up" temperature control, ensuring the accuracy of the temperature shock curve and the repeatability of test results. By introducing heat loss correction based on historical data fitting and a parameter adaptive adjustment process throughout the test cycle, the system can automatically identify and adapt to changes in thermal load caused by different heat capacity chip samples and workpiece trays. This function allows the equipment to optimize the preparatory temperature through iterative learning even when facing unknown or changing test samples, maintaining high-precision temperature control without manual intervention in parameter adjustments. Attached Figure Description

[0015] Figure 1 This is a flowchart of the high and low temperature shock cycle test method for chips proposed in this invention; Figure 2 This is a schematic diagram of the chip testing device proposed in this invention; Figure 3 This is a schematic diagram of the temporary storage chamber, high temperature chamber, low temperature chamber, and intermediate chamber of the chip testing device proposed in this invention; Figure 4 This is a schematic diagram of the temporary storage chamber of the chip testing device proposed in this invention; Figure 5 This is a schematic diagram of the low-temperature chamber of the chip testing device proposed in this invention; Figure 6 This is a schematic diagram of the high-temperature chamber of the chip testing device proposed in this invention. Detailed Implementation

[0016] Reference Figures 1-6 The present invention proposes a method for high and low temperature shock cycling testing of chips, which includes: S1. Before heating in a high-temperature environment, use a vacuum pump to extract the gas in the environment to make it a vacuum state, place the chip in the high-temperature environment, and keep the chip at the first temperature. The first temperature set in the high-temperature environment is the high-temperature shock test temperature, and the range of the first temperature is 350-425K. The specific test temperature can be set according to the chip model. To maintain the chip at the first temperature, the following operations can be performed: placing the workpiece tray containing the chip on a heat-conducting plate 422 in a high-temperature environment; controlling the heater integrated in the heat-conducting plate 422 to operate, and monitoring the chip temperature in real time through a temperature sensor in the high-temperature environment, and feeding back the monitored temperature to the temperature control system. The temperature control system dynamically adjusts the power of the heater according to the difference between the feedback temperature and the first temperature, so that the chip temperature rises and stabilizes at the first temperature.

[0017] S2. Before cooling down the low-temperature environment, use a vacuum pump to extract the gas from the environment to create a vacuum, lowering the low-temperature environment temperature to a preparatory low temperature below the second temperature. Transfer the chip from the high-temperature environment to the low-temperature environment until the chip cools down to the second temperature and maintains it at the second temperature. The second temperature set in the low-temperature environment is the test temperature of the low-temperature environment, and the range of the second temperature is 77-235K; the preparatory low temperature is set 20-50K lower than the second temperature. It is worth noting that both the second temperature and the preparatory low temperature need to be set according to the chip model.

[0018] To maintain the chip at the second temperature, the following operations can be performed: place the workpiece tray containing the chip on the cold-conducting plate 432 in a low-temperature environment; control the operation of the refrigerator connected to the bottom of the cold-conducting plate 432, and monitor the chip temperature in real time through a temperature sensor in the low-temperature environment, and feed the monitored temperature back to the temperature control system. The temperature control system dynamically adjusts the power of the refrigerator according to the difference between the feedback temperature and the second temperature, so that the chip cools down and stabilizes at the second temperature.

[0019] The aforementioned pre-low temperature is achieved by pre-cooling the cold-conducting plate 432 in the low-temperature environment to a second compensation temperature lower than the second temperature. The cold-conducting plate 432 is thermally connected to the cold head of the refrigerator that extends into the low-temperature environment. The second compensation temperature is obtained by calculating the heat capacity of the cold-conducting plate 432 and the heat released by the workpiece tray and the chip it carries from the first temperature to the second temperature through a second thermal balance calculation. This ensures that when the workpiece tray at the first temperature is placed on the cold-conducting plate 432 and thermal balance is achieved, the temperatures of the cold-conducting plate 432 and the workpiece tray together reach the second temperature.

[0020] The specific process of calculating the second thermal balance used to calculate the second compensation temperature is as follows: the basic compensation temperature value is determined based on the ratio of the heat capacity value of the cooling plate 432 to the total heat capacity value of the workpiece disk and the chip it carries; the actual heat loss parameters are obtained by fitting the temperature rise curve of the low temperature environment in the historical test cycle, and the basic compensation temperature value is corrected to obtain the second compensation temperature.

[0021] S3. Raise the ambient temperature to a preparatory high temperature higher than the first temperature to transfer the chip from the low-temperature environment back to the high-temperature environment, while maintaining the chip at the first temperature. The preparatory high temperature set here is 20-50K higher than the first temperature, and the specific value needs to be adjusted according to the chip model.

[0022] The aforementioned preheating temperature is achieved by preheating the heat-conducting plate 422 to a first compensation temperature higher than the first temperature. The first compensation temperature is obtained by using the heat capacity of the heat-conducting plate 422, the heat absorbed by the workpiece disk and the chip it carries from the second temperature to the first temperature as parameters in a first thermal balance calculation, so that when the workpiece disk at the second temperature is placed on the heat-conducting plate 422 and thermal balance is reached, the temperatures of the heat-conducting plate 422 and the workpiece disk together reach the first temperature.

[0023] The specific process of calculating the first thermal balance used to calculate the first compensation temperature is as follows: the basic compensation temperature value is determined based on the ratio of the heat capacity of the heat-conducting plate 422 to the total heat capacity of the workpiece disk and the chip it carries; the actual heat loss parameters are obtained by fitting the temperature drop curve of the high-temperature environment in the historical test cycle, and the basic compensation temperature value is corrected to obtain the first compensation temperature.

[0024] S4. Repeat S2 to S3 until the preset number of cycles is reached. Then, remove the workpiece disk and the chip on it, measure its fatigue strength, and output the measured fatigue strength.

[0025] The purpose of repeatedly transferring a chip between high and low temperature environments is to apply "thermal stress." This repeated cycling causes these stresses to accumulate, and through rapid and repeated temperature changes, it quickly induces potential defects and failure modes that might not appear under normal operating conditions for months or even years. This process is similar to an accelerated aging process, allowing for a quick assessment of the chip's fatigue resistance.

[0026] It is worth noting that the initial pre-set high and low temperatures used in the first cycle of the above process are obtained through thermal balance calculations based on the nominal heat capacities of the workpiece disk, the cold-conducting plate 432, and the heat-conducting plate 422 before the first cycle. Then, before the start of subsequent cycles, the previous pre-set high and low temperatures are updated and corrected. The process of updating and correcting the initial pre-set high and low temperatures is illustrated as follows: Based on the actual temperature change data of the workpiece disk in the first cycle, it is compared with the theoretical curve predicted by the nominal heat capacity. Based on the comparison result, the initial updated total heat capacity value of the workpiece disk and the chip it carries is obtained and stored through a parameter inversion algorithm, and this initial updated total heat capacity value is used for the calculation of the pre-set high and low temperatures in the second cycle.

[0027] Next, the modification process after completing the Mth cycle test is as follows: Based on the actual temperature change data of the Mth cycle, it is compared with the theoretical curve predicted by the total heat capacity value updated in the M-1th cycle. Based on the comparison result, the stored total heat capacity value is updated by the parameter inversion algorithm and used for the preliminary high temperature and preliminary low temperature calculations of the M+1th cycle, where M is a natural number greater than or equal to 2.

[0028] Through the aforementioned update and correction process, the pre-high temperature and pre-low temperature settings are no longer fixed or empirical values, but rather dynamic intelligent parameters based on initial calculations using a physical model, corrected by historical data, and continuously adaptively iterated using real-time test data. This effectively overcomes temperature control deviations caused by differences in heat capacity due to variations in chip model, package, and load conditions, achieving high-precision and high-stability temperature shock control. This cyclical process also helps to form a closed-loop, adaptive cooling capacity regulation system.

[0029] The following will combine, for example, Figures 2-6 The chip testing apparatus shown further illustrates the above testing method: Example 1

[0030] The chip testing apparatus used in this embodiment includes a temporary storage chamber 11, a high-temperature chamber 12, a low-temperature chamber 13, and an intermediate chamber 14. The temporary storage chamber 11 and the intermediate chamber 14 are selectively connected and disconnected via a first isolation component 51; the high-temperature chamber 12 and the intermediate chamber 14 are selectively connected and disconnected via a second isolation component 52; and the low-temperature chamber 13 and the intermediate chamber 14 are selectively connected and disconnected via a third isolation component 53. A robotic arm 44 for transferring workpiece trays is installed inside the intermediate chamber 14. The high-temperature chamber 12 can be used to create the high-temperature environment required in the above-described chip testing method, while the low-temperature chamber 13 can be used to create the low-temperature environment required in the above-described chip testing method.

[0031] In this embodiment, only one workpiece tray is provided for transferring between the temporary storage room 11, the high temperature room 12, and the low temperature room 13.

[0032] In the initial state, all isolation components are open, and the temporary storage chamber 11, high temperature chamber 12, low temperature chamber 13, and intermediate chamber 14 are all at normal temperature and pressure.

[0033] S1. Lofting: Place the workpiece tray containing the chip into the temporary storage chamber 11 and close the chamber door.

[0034] S2. Evacuation: Start vacuum pump 2 to evacuate the temporary storage chamber 11, high temperature chamber 12, low temperature chamber 13, and intermediate chamber 14 until the chamber pressure reaches 10. -3 When Pa is reached, the second isolation component 52 and the third isolation component 53 are shut down, and high and low temperature preparation begins.

[0035] S3, High and Low Temperature Acquisition: Turn on the refrigeration unit 431 in the low temperature chamber 13 and the heater in the high temperature chamber 12 to bring the high and low temperatures to the target temperatures (T). D2 and T G1 ); where T D2 The test temperature, lower than that of the low-temperature chamber 13 (i.e., the second compensation temperature and the preparatory low temperature), is to reserve sufficient cooling capacity; T G1 The test temperature (i.e., the first temperature) is the temperature of the high-temperature chamber 12.

[0036] S4. Transfer: Open the second isolation component 52, the robotic arm 44 transfers the workpiece tray to the high-temperature chamber 12, the robotic arm 44 returns to its original position, and the first isolation component 51 and the second isolation component 52 are closed.

[0037] S5. High Temperature Maintenance: Cylinder 71 on the high temperature chamber 12 is activated, driving copper claws 7 to press the workpiece disc onto the heat-conducting plate 422. The temperature controller maintains the temperature of the heat-conducting plate 422 at T. G1 The high-temperature station holding time for the workpiece is t1 (min).

[0038] S6. Transfer: Cylinder 71 on the high-temperature chamber 12 is pulled up, releasing the workpiece tray; the second isolation component 52 and the third isolation component 53 are opened, and the workpiece tray is transferred to the low-temperature chamber 13 using the robotic arm 44; the robotic arm 44 returns to its original position, the second isolation component 52 and the third isolation component 53 are closed, and cylinder 71 in the low-temperature chamber 13 is pressed down, starting from T... G1 To T D1 Cooling down; T D1 The test temperature for the low-temperature greenhouse 13 (i.e., the second temperature); the high-temperature greenhouse 12 begins at a high temperature T. G2 Ready, T G2 The test temperature is higher than that of the high-temperature chamber (i.e., the first compensation temperature and the preparatory high temperature) in order to reserve enough heat.

[0039] S7. Cooling process: Initial temperature T of the cold plate 432 D2 Initial temperature T of the workpiece disk G1 T D2 The test temperature T below the low temperature chamber 13 D1 This design allows the coolant plate 432 to absorb heat from the high-temperature workpiece tray instantly upon contact with it. This excess cooling can then offset the significant heat load from the workpiece tray, preventing the temperature of the coolant plate 432 from rising to T. D1 The above steps are taken to reduce initial deviation and make the system response more stable; the workpiece tray begins to cool down, and the temperature controller starts to control the temperature to T. D1 The cooling process is complete.

[0040] During the temperature control process, the built-in PID controller of the temperature controller detects, based on the feedback from the temperature sensor on the copper claw 7, that the temperature of the workpiece tray is much higher than T.D1 The PID controller calculates the cooling output of the chiller 431 based on the deviation, but since the temperature of the cooling plate 432 itself is T... D2 The temperature difference between the workpiece and the workpiece plate is extremely large, so heat will spontaneously and rapidly flow from the workpiece plate to the cooling plate 432. The derivative action of the PID can predict the temperature change trend. When the temperature of the workpiece plate is detected to be approaching the target value at a relatively fast speed, the derivative term will reduce the cooling output in advance to suppress undershoot. When the temperature of the workpiece plate is close to the target value, the proportional and integral actions are finely adjusted. The integral term eliminates steady-state error, and the proportional term provides control action proportional to the deviation. Since the cooling plate 432 has stored energy, the cooling capacity of the system is relatively sufficient. A small adjustment of the power of the refrigerator 431 by the PID output can maintain the temperature stability and avoid oscillation caused by drastic power fluctuations.

[0041] S8. Low temperature holding: The workpiece tray continues to be held at the third station 43 for t2 (min).

[0042] S9. Transfer: Cylinder 71 of the low-temperature chamber 13 is pulled up, releasing the workpiece tray. The second isolation component 52 and the third isolation component 53 open. The robotic arm 44 transfers the workpiece tray from the third station 43 to the second station 42. The robotic arm 44 returns to its original position, and the second isolation component 52 and the third isolation component 53 close. The low-temperature chamber 13 begins T... D2 Prepare.

[0043] S10, High Temperature Regain: Initial Temperature T of Heat Conductor 422 G2 The initial temperature T of the workpiece disk D1 In the high-temperature chamber 12, cylinder 71 descends, pressing the workpiece disc. The temperature controller is activated, and the temperature control process is similar to that in S7. The workpiece disc begins to heat up until T... G1 .

[0044] S11, Cycle: Return to S5, maintain high temperature; S5~S10 cycle N times.

[0045] It is worth noting that: the above-mentioned preparatory high temperature (T) D2 This is achieved by preheating the heat-conducting plate 422 inside the high-temperature chamber 12 to a first compensation temperature (T) higher than the first temperature. G2This is achieved through a process called thermal equilibrium. The core basis for determining the first compensation temperature is the principle of thermal balance: when the workpiece disk at a low temperature (second temperature) is transferred to the high-temperature chamber 12 and comes into contact with the heat-conducting plate, the two will exchange heat and eventually tend towards a common temperature. In order to ensure that this common temperature reaches the required first temperature, the initial temperature of the heat-conducting plate 422 (i.e., the first compensation temperature) needs to be calculated and set in advance, so that the extra heat stored in it is used to compensate for the heat absorbed by the workpiece disk and its supporting chip as they heat up. The specific calculation process is divided into two main stages: 1. Basic compensation calculation: First, based on the proportional relationship between the known heat capacity of the heat-conducting plate 422 and the nominal total heat capacity of the workpiece disk and chip, a basic compensation temperature value is estimated. This step ensures that under ideal, heat-loss-free conditions, the system can naturally reach the target temperature through thermal equilibrium. 2. Heat loss correction: In the actual system, the high-temperature chamber 12 experiences continuous heat loss (such as radiation, conduction, etc.) during the waiting and heat exchange process. To compensate for this impact, the system fits the actual heat loss parameters based on the temperature drop curves recorded in historical test cycles, and dynamically corrects the aforementioned basic compensation temperature value to obtain the final applied first compensation temperature. This correction mechanism significantly improves the accuracy and environmental adaptability of temperature control.

[0046] The aforementioned pre-low temperature is achieved by pre-cooling the cold-conducting plate 432 within the low-temperature chamber 13 to a second compensation temperature lower than the target second temperature. This cold-conducting plate 432 maintains an efficient thermal connection with the cold head of the refrigerator 431, serving as the system's low-temperature heat reservoir. The core principle of setting the second compensation temperature lies in precise thermal balance design: when the workpiece disk at a high temperature (first temperature) is transferred to the low-temperature chamber 13 and comes into contact with the cold-conducting plate 432, the heat released by the workpiece disk and its chips will be absorbed by the cold-conducting plate. To ensure that the final temperature after thermal equilibrium reaches the required second temperature, the cold-conducting plate 432 must be pre-cooled to a sufficiently low temperature T. D2 (i.e., the second compensation temperature) ensures sufficient "cooling capacity" to absorb the heat released by the workpiece disk, thereby rapidly cooling the workpiece disk to the target temperature in one go, avoiding the delays and fluctuations caused by traditional successive temperature control. The specific process for determining the second compensation temperature is as follows: 1. Basic Cooling Capacity Calculation: Based on the ratio between the known heat capacity of the cooling plate 432 and the nominal total heat capacity of the workpiece disk and chip, a basic second compensation temperature value is calculated. This calculation ensures that under ideal adiabatic conditions, the cooling plate 432 and the workpiece disk system can autonomously reach the target low temperature through internal heat exchange. 2. Actual Cooling Loss Compensation: In actual operation, external heat intrusion (such as radiative heat leakage, support structure heat leakage, etc.) is unavoidable in the low-temperature chamber 13. Therefore, the system will call the temperature rise curve recorded in historical test cycles, quantify the actual cooling loss parameters through fitting analysis, and adjust the basic compensation temperature value accordingly to obtain the final applied second compensation temperature, thus offsetting the impact of heat intrusion on the cooling process.

[0047] Furthermore, to enable the pre-high temperature and pre-low temperature tests to continuously learn and optimize during the aforementioned cyclical tests, the following process is also set up: Initialization process: Before executing the first cycle, based on the nominal heat capacity of the workpiece disk and its supporting chip, as well as the nominal heat capacity of the cold plate 432 and the heat plate 422, the preliminary low temperature and preliminary high temperature to be used in the first cycle are obtained through thermal balance calculation.

[0048] Initial correction process: After completing the first cycle test, the actual temperature-time change data of the workpiece disk in the first cycle is obtained and compared with the theoretical temperature-time change curve predicted by thermal balance calculation based on the nominal heat capacity values ​​of the workpiece disk and its supporting chip, as well as the nominal heat capacity values ​​of the cold conduction plate 432 and the heat conduction plate 422; based on the deviation of this comparison, the first updated total heat capacity value of the workpiece disk and its supporting chip is calculated and stored by the parameter inversion algorithm; the first updated total heat capacity value is used for the preliminary high-temperature calculation and preliminary low-temperature calculation of the second cycle; Iterative optimization process: After completing the Mth cycle test, where M is a natural number greater than or equal to 2, the actual temperature-time change data of the workpiece disk in the Mth cycle is obtained; the actual temperature-time change data is compared with the theoretical temperature-time change curve predicted by the thermal balance relationship based on the updated total heat capacity value stored after the (M-1)th cycle; based on the comparison deviation, the total heat capacity value of the workpiece disk and its supporting chip is calculated and updated by the parameter inversion algorithm; the updated total heat capacity value is used for the preliminary high-temperature calculation and preliminary low-temperature calculation of the (M+1)th cycle.

[0049] Through this method, the pre-set high temperature is no longer a fixed or empirical value, but a dynamic intelligent parameter based on initial calculations using a physical model, corrected by historical data, and continuously adaptively iterated using real-time test data. This effectively overcomes temperature control deviations caused by differences in heat capacity due to variations in chip model, package, and load conditions, achieving high-precision and high-stability temperature shock control. This cyclical process also helps to form a closed-loop, adaptive cooling capacity regulation system.

[0050] S12, End of Test and Temperature Recovery: In the final cycle, the workpiece tray is removed from the second station 42, cylinder 71 in the high-temperature chamber 12 rises, the first isolation component 51 and the second isolation component 52 are opened, the robotic arm 44 moves the workpiece tray to the temporary storage chamber 11, the first isolation component 51 and the second isolation component 52 are closed, and the temporary storage chamber 11 is then filled with gas to atmospheric pressure for temperature recovery. The high-temperature chamber 12 and the low-temperature chamber 13 continue to conduct the T test. D2 and T G1 Temperature preparation.

[0051] S13. Test sample removal: Open the door lock of temporary storage chamber 11, remove the chip to be tested, measure its fatigue strength, and output the measured value. The high and low temperature impact test is over.

[0052] In this embodiment, if further testing is required after the chip testing on the workpiece tray is completed, the above S1-S3 are adjusted as follows: The first isolation component 51 connected to the temporary storage chamber 11 is closed (at this time, the second isolation component 52 and the third isolation component 53 are both closed), the door of the temporary storage chamber 11 is opened, and the (N+1)th workpiece tray carrying the chip is placed into the temporary storage chamber (N is a natural number excluding 0). After closing the door of the temporary storage chamber 11, the air inside the temporary storage chamber 11 is extracted using the vacuum pump 2 to bring the internal air pressure to 10. -3 When the vacuum state of Pa is reached, preparations for high and low temperatures begin.

[0053] The aforementioned design using the cold-conducting plate 432 and the heat-conducting plate 422 is essentially a "preheating / precooling" feedforward control, providing energy reserves to cope with known interference (chip transfer). The subsequent PID feedback control focuses on eliminating residual deviations and suppressing fluctuations. The combination of these two achieves a balance between speed and accuracy. Furthermore, the PID feedback signal originates directly from the workpiece tray, rather than from the cold-conducting plate 432 or the heat-conducting plate 422. This enables direct and precise control of the final controlled object, avoiding control lag and deviations caused by the contact thermal resistance between the cold-conducting plate 432 or the heat-conducting plate 422 and the workpiece tray.

[0054] Example 2 Unlike Embodiment 1, there are two workpiece trays for transferring between the temporary storage chamber 11, the high-temperature chamber 12, and the low-temperature chamber 13. All other settings are the same as in Embodiment 1 and will not be described further here.

[0055] In the initial state, all isolation components are open, and the temporary storage chamber 11, high temperature chamber 12, low temperature chamber 13, and intermediate chamber 14 are all at normal temperature and pressure.

[0056] S1. Lofting: Place the No. 1 workpiece tray containing the chip into the temporary storage chamber 11 and close the chamber door.

[0057] S2. Evacuation: Start vacuum pump 2 to evacuate the temporary storage chamber 11, high temperature chamber 12, low temperature chamber 13, and intermediate chamber 14 until the chamber pressure reaches 10. -3 When Pa is reached, the second isolation component 52 and the third isolation component 53 are shut down, and high and low temperature preparation begins.

[0058] S3, High and Low Temperature Acquisition: Turn on the refrigerator 431 and heater to bring the high and low temperatures to the target temperatures (T). D2 and T G1 ); where T D2The test temperature, lower than that of the low-temperature room 13 (i.e., the second compensation temperature), is to reserve sufficient cooling capacity; T G1 The test temperature for the high-temperature chamber 12 (i.e., the first temperature).

[0059] S4. Transfer: Open the second isolation component 52, and the robotic arm 44 transfers the No. 1 workpiece tray to the high-temperature chamber 12. The robotic arm 44 returns to its original position, and the first isolation component 51 and the second isolation component 52 are closed. The temporary storage chamber 11 is filled with air to normal pressure through the air pipe. The chamber door is opened and the No. 2 workpiece tray is placed in the first station 41 of the temporary storage chamber 11. The chamber door of the temporary storage chamber 11 is closed, and the temporary storage chamber 11 is evacuated again.

[0060] S5. High Temperature Maintenance: Cylinder 71 on the high temperature chamber 12 is activated, driving copper claws 7 to press the workpiece disc onto the heat-conducting plate 422. The temperature controller maintains the temperature of the heat-conducting plate 422 at T. G1 The high temperature holding time for workpiece No. 1 is t1 (min).

[0061] S6. Transfer: Cylinder 71 on the high-temperature chamber 12 is pulled up, releasing the No. 1 workpiece tray; the second isolation component 52 and the third isolation component 53 are opened, and the robotic arm 44 transfers the No. 1 workpiece tray to the low-temperature chamber 13; the robotic arm 44 returns to its original position, the second isolation component 52 and the third isolation component 53 are closed, and cylinder 71 in the low-temperature chamber 13 is pressed down, starting from T... G1 Cool down to T D1 ;T D1 The test temperature is set at the low temperature chamber 13 (i.e., the second temperature); the second workpiece tray is transferred to the high temperature chamber 12 using a robotic arm 44, and the high temperature of the second workpiece tray is maintained for t1 (min).

[0062] S7. Cooling process of workpiece tray No. 1: Initial temperature T of cooling plate 432 D2 The initial temperature T of workpiece tray No. 1 G1 T D2 The test temperature T below the low temperature chamber 13 D1 This design allows the heat-conducting plate 432 to absorb heat from the high-temperature workpiece tray instantly upon contact with it. The excess cooling capacity from this absorption can then offset the significant heat load from the workpiece tray, preventing the temperature of the heat-conducting plate 432 from dropping below T. D1 The following steps are taken to reduce initial deviation and make the system response more stable; the workpiece tray begins to cool down, and the temperature controller starts to control the temperature to T. D1 (The temperature control process of this temperature controller is the same as in Example 1), and the cooling process is completed; the No. 1 workpiece tray continues to be maintained at t2 (min) in the low temperature chamber 13.

[0063] S8. Transfer: Open the first isolation component 51 and the third isolation component 53, and use the robotic arm 44 to transfer the No. 1 workpiece tray to the first workstation 41 in the temporary storage chamber 11; at the same time, start the low temperature preparation, start the refrigeration unit 431, and lower the temperature of the cold plate 432 in the low temperature chamber 13 to T. D2 Then, the second workpiece tray is transferred to the third station 43 of the low-temperature chamber 13. The cylinder 71 inside the low-temperature chamber 13 is pressed down, and the temperature of the second workpiece tray rises from T... G1 Reduced to T D1 And continue to maintain t2 (min); then begin high-temperature preparation, start the heater, and heat the heat transfer plate 422 to T. G2 Open the first isolation component 51 and the second isolation component 52, and transfer the No. 1 workpiece tray to the second station 42 inside the high-temperature chamber 12.

[0064] S9, return to S5, maintain high temperature; cycle N times from S5 to S8.

[0065] S10. Sampling at the end of the test: In the last cycle, workpiece tray No. 1 is removed from station 42 and workpiece tray No. 2 is removed from station 43.

[0066] When the No. 1 workpiece tray is removed, cylinder 71 inside the high-temperature chamber 12 rises, opening the first isolation component 51 and the second isolation component 52. The robotic arm 44 moves the No. 1 workpiece tray to the temporary storage chamber 11, closes the first isolation component 51 and the second isolation component 52, and then fills the temporary storage chamber 11 with gas until it returns to normal pressure and temperature. The high-temperature chamber 12 continues to operate. G1 Temperature preparation; open the door lock of temporary storage chamber 11, take out the chip on workpiece tray No. 1, measure its fatigue strength, and output the measurement results.

[0067] Close the door of temporary storage chamber 11, evacuate temporary storage chamber 11, then open the first isolation component 51 and the third isolation component 53, and the robotic arm 44 moves the second workpiece tray into temporary storage chamber 11. Close the first isolation component 51 and the third isolation component 53, and then fill temporary storage chamber 11 with gas until it reaches normal pressure and temperature recovery; the low temperature chamber 13 continues to process T D1 Temperature preparation; open the door lock of temporary storage chamber 11, take out the chip on workpiece tray No. 2, measure its fatigue strength, and output the measurement results.

[0068] At this point, the high and low temperature tests on the chips on both workpiece trays are complete. This method of simultaneously utilizing two workpiece trays for high and low temperature testing, compared to single-workpiece tray testing where the high temperature chamber 12 or low temperature chamber 13 is idle for half the time, ensures that the high temperature chamber 12 and low temperature chamber 13 in this embodiment are almost always operational (either testing or preparing), with extremely short idle times. This maximizes equipment utilization and significantly increases the number of chips tested in a single cycle, substantially doubling testing efficiency.

[0069] It is worth noting that the core of high and low temperature shock testing is the ability to withstand extreme temperatures and rapidly transition between them. "Transition time" refers to the physical movement time of the chip from one extreme temperature environment to another. In this embodiment, the time the chip spends in the temporary storage chamber 11 is the "waiting queue time" or "system preparation time," not the "transition time" defined in standards such as JESD22-A104. In this embodiment, after leaving the test temperature zones (high temperature chamber 12, low temperature chamber 13), the chip enters the neutral buffer temperature zone (temporary storage chamber 11) and does not begin the next test. Once the low temperature environment is ready, the physical movement time of the chip from the neutral buffer to the test temperature zone remains ≤5 seconds. This invention perfectly solves the core problem of long and unstable transition times in existing technologies and stabilizes the transition time at an extremely high level. The "waiting" caused by scheduling in this embodiment is a management behavior that occurs outside the test conditions due to system throughput optimization and does not affect the accuracy and standard compliance of individual tests.

[0070] The above description is only a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any equivalent substitutions or modifications made by those skilled in the art within the scope of the technology disclosed in the present invention, based on the technical solution and inventive concept of the present invention, should be covered within the scope of protection of the present invention.

Claims

1. A method for high and low temperature shock cycling testing of chips, characterized in that, include: S1. Place the chip in a vacuum high-temperature environment and keep the chip at the first temperature; S2. Transfer the chip from a high-temperature environment to a vacuum environment at a pre-low temperature that is lower than the second temperature, until the chip cools down to the second temperature, and keep the chip at the second temperature. S3. Transfer the chip from the high-temperature environment back to the pre-high-temperature environment with a temperature higher than the first temperature, and keep the chip at the first temperature. The pre-high temperature / pre-low temperature is achieved by heating / cooling the carrier of the chip in the high-temperature environment / low-temperature environment to the first compensation temperature / second compensation temperature. The first compensation temperature / second compensation temperature is obtained by thermal balance calculation using the heat capacity value of the carrier and the heat change value caused by the chip on it switching between the first temperature and the second temperature as parameters. S4. Repeat S2 to S3 until the preset number of cycles is reached, then measure and output the fatigue strength of the chip after the preset number of cycles is reached.

2. The chip high and low temperature shock cycle test method according to claim 1, characterized in that, The carrier includes a heat-conducting plate and a workpiece tray; the step of keeping the chip at the first temperature specifically involves: placing the workpiece tray containing the chip on the heat-conducting plate in a high-temperature environment; controlling the heater integrated in the heat-conducting plate to operate, and monitoring the chip temperature in real time through a temperature sensor in a high-temperature environment, and feeding back the monitored temperature to the temperature control system; the temperature control system dynamically adjusts the power of the heater according to the difference between the feedback temperature and the first temperature, so that the chip heats up and stabilizes at the first temperature.

3. The chip high and low temperature shock cycle test method according to claim 2, characterized in that, The pre-heated temperature is achieved by preheating the heat-conducting plate to a first compensation temperature higher than the first temperature. The first compensation temperature is obtained by using the heat capacity of the heat-conducting plate, the heat absorbed by the workpiece plate and the chip it carries from the second temperature to the first temperature as parameters in a first thermal balance calculation, so that when the workpiece plate at the second temperature is placed on the heat-conducting plate and thermal balance is reached, the temperatures of the heat-conducting plate and the workpiece plate together reach the first temperature.

4. The chip high and low temperature shock cycle test method according to claim 3, characterized in that, The first thermal balance calculation specifically involves determining the basic compensation temperature value based on the ratio of the heat capacity of the heat-conducting plate to the total heat capacity of the workpiece disk and the chip it carries. The actual heat loss parameters are obtained by fitting the temperature drop curve of the high-temperature environment in the historical test cycle, and the basic compensation temperature value is corrected to obtain the first compensation temperature.

5. The chip high and low temperature shock cycle test method according to claim 1, characterized in that, The carrier also includes a cold-conducting plate; the process of keeping the chip at the second temperature specifically involves: placing a workpiece tray containing the chip on the cold-conducting plate in a low-temperature environment; controlling the operation of a refrigerator connected to the bottom of the cold-conducting plate; monitoring the chip temperature in real time through a temperature sensor in the low-temperature environment; and feeding back the monitored temperature to a temperature control system. The temperature control system dynamically adjusts the power of the refrigerator based on the difference between the feedback temperature and the second temperature, thereby cooling the chip and stabilizing it at the second temperature.

6. The chip high and low temperature shock cycle test method according to claim 5, characterized in that, The pre-low temperature is achieved by pre-cooling the cold-conducting plate in the low-temperature environment to a second compensation temperature lower than the second temperature. The cold-conducting plate is thermally connected to the cold head of the refrigerator that extends into the low-temperature environment. The second compensation temperature is obtained by calculating the heat capacity of the cold-conducting plate and the heat released by the workpiece plate and the chip it carries from the first temperature to the second temperature through a second thermal balance calculation, so that when the workpiece plate at the first temperature is placed on the cold-conducting plate and thermal balance is reached, the temperature of the cold-conducting plate and the workpiece plate together reach the second temperature.

7. The chip high and low temperature shock cycle test method according to claim 6, characterized in that, The second thermal balance calculation specifically involves determining the basic compensation temperature value based on the ratio of the heat capacity of the cooling plate to the total heat capacity of the workpiece disk and the chip it carries. The actual heat loss parameters are obtained by fitting the temperature rise curve of the low-temperature environment in the historical test cycle, and the basic compensation temperature value is corrected to obtain the second compensation temperature.

8. The chip high and low temperature shock cycle test method according to claim 1, characterized in that, It also includes a parameter adaptive adjustment process applied to the S2 to S3 loop, which is divided into an initialization step, an initial correction step, and an iterative correction step. The initialization step specifically involves: before the first cycle, based on the nominal heat capacity of the workpiece plate, the cold plate, and the heat plate, calculating the initial high temperature and low temperature through thermal balance. The first correction step is as follows: based on the actual temperature change data of the workpiece disk in the first cycle, it is compared with the theoretical curve predicted by the nominal heat capacity. Based on the comparison result, the first updated total heat capacity value of the workpiece disk and the chip it carries is obtained and stored through the parameter inversion algorithm, and the first updated total heat capacity value is used for the pre-high temperature and pre-low temperature calculations of the second cycle. The iterative correction step is as follows: Based on the actual temperature change data of the Mth cycle, compare it with the theoretical curve predicted by the total heat capacity value updated in the (M-1)th cycle. Based on the comparison result, update the stored total heat capacity value through the parameter inversion algorithm and use it for the preliminary high temperature and preliminary low temperature calculations of the (M+1)th cycle, where M is a natural number greater than or equal to 2.

9. A chip testing device, characterized in that, The chip testing device uses the chip high and low temperature shock cycle testing method according to any one of claims 1-8.

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