Substrate processing apparatus, protection member, method of manufacturing semiconductor device, and program product

Abstract

Provided is a technique capable of adjusting the range in which a reaction by-product or the like is suppressed from adhering to the inner peripheral surface of a processing container. Comprises: a processing container for processing a substrate; a gas supply unit capable of supplying a gas for processing the substrate into the processing container; a protection member disposed along the inner circumferential surface of the processing container and capable of adjusting the height by rotating in the circumferential direction; and a control unit which is configured so as to be able to perform control after the height of the protection member is adjusted, so that the gas is supplied and the substrate is processed.

Description

Technical Field

[0001] This invention relates to substrate processing apparatus, protective components, manufacturing methods and processes for semiconductor devices. Background Technology

[0002] As part of the manufacturing process of semiconductor devices, sometimes a process is performed to modify the film formed on the substrate using plasma (see, for example, Patent Document 1).

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2014-75579 Summary of the Invention

[0006] The problem that the invention aims to solve

[0007] This disclosure provides a technique for adjusting the extent to which the adhesion of isotropically treated containers containing reaction byproducts can be suppressed.

[0008] Methods for solving problems

[0009] The following technology is provided according to one aspect of this disclosure, comprising:

[0010] Processing container, which processes the substrate;

[0011] A gas supply unit is capable of supplying gas for processing the substrate into the processing container;

[0012] A protective component, configured along the inner circumferential surface of the processing container, is height-adjustable by circumferential rotation; and

[0013] The control unit is configured to control the supply of gas and the processing of the substrate after the height of the protective component is adjusted.

[0014] Invention Effects

[0015] According to this disclosure, the range of adhesion of isotropic treatment containers to inhibit reaction byproducts can be adjusted. Attached Figure Description

[0016] Figure 1 This is a schematic configuration diagram illustrating the substrate processing apparatus according to the present disclosure.

[0017] Figure 2 This diagram illustrates a scenario where a protective component is replaced within the substrate processing apparatus according to the present disclosure.

[0018] Figure 3(A) is a top view of the protective component of the present disclosure. Figure 3 (B) is Figure 3 Side view of the protective component of (A).

[0019] Figure 4 (A) is a front view showing the protective component at its lowest height. Figure 4 (B) is Figure 4 A partial sectional view of (A). Figure 4 (C) is the front view showing the protective component at its highest position. Figure 4 (D) is Figure 4 A partial sectional view of (C).

[0020] Figure 5 This is a control block diagram illustrating the control system of the controller of the substrate processing apparatus according to the present disclosure.

[0021] Figure 6 This is a flowchart illustrating the substrate processing steps of the manner described in this disclosure.

[0022] Figure 7 (A) is a top view of a modified example of the protective component of the present disclosure. Figure 7 (B) is Figure 7 Side view of the protective component of (A).

[0023] Figure 8 (A) is a top view of a modified example of the protective component of the present disclosure. Figure 8 (B) is Figure 8 Side view of the protective component of (A).

[0024] Explanation of reference numerals in the attached figures

[0025] 100 substrate processing apparatus

[0026] 200 wafers (an example of a substrate)

[0027] 203 processing container

[0028] 221 Control Department

[0029] 230 Gas Supply Department

[0030] 280, 290, 300 protective components Detailed Implementation

[0031] The following is mainly based on Figures 1 to 8This is one way of illustrating the present disclosure. It should be noted that the accompanying drawings used in the following description are schematic. Furthermore, the dimensional relationships and ratios of the elements shown in the drawings may not necessarily match reality. Moreover, the dimensional relationships and ratios of the elements may not be consistent across multiple drawings.

[0032] (1) Composition of substrate processing device

[0033] like Figure 1 As shown, the substrate processing apparatus 100 includes a processing furnace 202 for plasma processing of a wafer 200, which serves as a substrate. The processing furnace 202 includes a processing container 203 that forms a processing chamber 201. That is, the substrate processing apparatus 100 is configured to perform plasma processing of the wafer 200 within the processing container 203. The processing container 203 includes a dome-shaped upper container 210 and a bowl-shaped lower container 211. Furthermore, the substrate processing apparatus 100 includes a bottom plate 248 that covers the upper end of the lower container 211 and has through holes formed therein.

[0034] The processing chamber 201 is formed by an upper container 210 covering a lower container 211. The upper container 210 is made of quartz (SiO2), and the lower container 211 is made of, for example, aluminum (Al).

[0035] In addition, a silicon nitride (SiN) film is formed on the inner circumferential surface of the upper container 210 as a protective film. The upper container 210 is an example of a quartz container.

[0036] In addition, such as Figure 1 As shown, a gate valve 244 is provided on the lower side wall of the lower container 211. The gate valve 244 is configured to, when open, use a conveying mechanism (not shown) to move the wafer 200 into or out of the processing chamber 201 via the inlet / outlet 245. When closed, the gate valve 244 serves as a partition valve to maintain the airtightness of the processing chamber 201.

[0037] The processing chamber 201 includes a plasma generation space surrounded by resonant coils 212 and a substrate processing space connected to the plasma generation space for processing the wafer 200. The plasma generation space is the space within the processing chamber that generates plasma, located above and below the lower end of the resonant coils 212. Conversely, the substrate processing space is the space within the processing chamber where the wafer 200 is processed using plasma, and is located below the lower end of the resonant coils 212.

[0038] [Pedestal 217]

[0039] The base 217, which serves as the substrate mounting portion for the wafer 200, is as follows: Figure 1As shown, it is located at the center of the bottom side of the processing chamber 201.

[0040] A heater 217b, serving as a heating mechanism, is integrally embedded inside the base 217.

[0041] The base 217 is electrically insulated from the lower container 211. An impedance adjustment electrode 217c is installed inside the base 217. The impedance adjustment electrode 217c is grounded via an impedance variable mechanism 275, which serves as an impedance adjustment unit.

[0042] Additionally, a base lifting mechanism 268 with a drive mechanism for raising and lowering the base is provided on the base 217. Furthermore, a through hole 217a is provided on the base 217, and a wafer ejection pin 266 is provided on the bottom surface of the lower container 211. When the base 217 is lowered by the base lifting mechanism 268, the wafer ejection pin 266 passes through the through hole 217a in a state of not contacting the base 217.

[0043] The substrate mounting part of this method is mainly composed of base 217 and heater 217b.

[0044] [Gas Supply Department 230]

[0045] like Figure 1 As shown, the gas supply unit 230 is located above the processing chamber 201. Specifically, a gas supply head 236 is provided above the processing chamber 201, i.e., above the upper container 210. The gas supply head 236 is configured to include a cover-shaped cover 233, a gas inlet 234, a buffer chamber 237, an opening 238, a baffle plate 240, and a gas outlet 239, and is capable of supplying various gases to the processing chamber 201.

[0046] Gas supply pipe 232 is connected to gas inlet 234. The downstream end of the first gas supply pipe 232a for supplying the first gas, the downstream end of the second gas supply pipe 232b for supplying the second gas, and the inactive gas supply pipe 232c for supplying the inactive gas are connected to gas supply pipe 232 in a confluence manner.

[0047] On the first gas supply pipe 232a, a mass flow controller (MFC) 252a, serving as a flow control device, and a valve 253a, serving as an on / off valve, are sequentially provided from the upstream side. On the second gas supply pipe 232b, an MFC 252b and a valve 253b are sequentially provided from the upstream side. On the inactive gas supply pipe 232c, an MFC 252c and a valve 253c are sequentially provided from the upstream side. It should be noted that, although not included in the substrate processing apparatus 100, a first gas supply source 250a is provided upstream of the MFC 252a in the first gas supply pipe 232a, a second gas supply source 250b is provided upstream of the MFC 252b in the second gas supply pipe 232b, and an inactive gas supply source 250c is provided upstream of the MFC 252c in the inactive gas supply pipe 232c.

[0048] A valve 243a is provided on the gas supply pipe 232. The gas supply unit 230 is configured to supply gas for processing the wafer 200 into the processing container 203.

[0049] The gas supply unit 230 (gas supply system) of this embodiment mainly consists of a gas supply head 236 (cover 233, gas inlet 234, buffer chamber 237, opening 238, baffle 240, and gas outlet 239), a first gas supply pipe 232a, a second gas supply pipe 232b, an inactive gas supply pipe 232c, MFCs 252a, 252b, and 252c, and valves 253a, 253b, 253c, and 243a. It should be noted that the first gas supply source 250a, the second gas supply source 250b, and the inactive gas supply source 250c can also be included in the gas supply unit 230.

[0050] [Exhaust section 228]

[0051] A gas exhaust port 235 is provided on the side wall of the lower container 211 to discharge the gas in the processing chamber 201. The gas exhaust port 235 is connected to the upstream end of the gas exhaust pipe 231. On the gas exhaust pipe 231, starting from the upstream side, there are sequentially arranged an APC (Auto Pressure Controller) valve 242 as a pressure regulator (pressure regulating unit), a valve 243b as an on / off valve, and a vacuum pump 246 as a vacuum exhaust device.

[0052] The exhaust section 228 of this embodiment mainly consists of a gas exhaust port 235, a gas exhaust pipe 231, an APC valve 242, and a valve 243b. It should be noted that a vacuum pump 246 may also be included in the exhaust section 228.

[0053] [Plasma Generation Unit 216]

[0054] like Figure 1 As shown, the plasma generation unit 216 is mainly located on the outer side of the outer wall of the upper container 210. Specifically, a spiral resonant coil 212 is provided on the outer periphery of the processing chamber 201, i.e., on the outer side wall of the upper container 210, to surround the processing chamber 201. In other words, the spiral resonant coil 212 is provided to surround the processing container 203 from the radially outer side of the upper container 210 (the side away from the center of the upper container 210). The resonant coil 212 is an electrode and is an example of a coil.

[0055] In addition, the resonant coil 212 is connected to the RF (Radio Frequency) sensor 272, the high-frequency power supply 273, the impedance of the high-frequency power supply 273, and the matching circuit 274 for output frequency matching.

[0056] A high-frequency power supply 273 supplies high-frequency power (RF power) to the resonant coil 212. An RF sensor 272 is located on the output side of the high-frequency power supply 273 to monitor the supplied high-frequency traveling wave and reflected wave information. The reflected wave power monitored by the RF sensor 272 is input to a matching converter 274. The matching converter 274 controls the impedance of the high-frequency power supply 273 and the frequency of the output high-frequency power based on the reflected wave information input from the RF sensor 272 to minimize the reflected wave.

[0057] The high-frequency power supply 273 includes a power control mechanism (control circuit) comprising a high-frequency oscillation circuit and a preamplifier for specifying the oscillation frequency and output, and an amplifier (output circuit) for amplifying the output to the specified value. The power control mechanism controls the amplifier based on output conditions related to the frequency and power preset via the operation panel. The amplifier supplies a constant high-frequency power to the resonant coil 212 via a transmission line.

[0058] The resonant coil 212 has a set diameter, winding spacing, and number of turns to form a standing wave of a specified wavelength, so as to resonate at a certain wavelength. That is, the electrical length of the resonant coil 212 is set to be an integer multiple (1, 2, ...) of the wavelength at a specified frequency of the high-frequency power supplied from the high-frequency power source 273. In other words, the substrate processing apparatus 100 includes a high-frequency power source 273 that supplies high-frequency power to electrodes, wherein the wavelength of the high-frequency power is an integer multiple of the electrical length of the resonant coil 212.

[0059] The raw materials used to form the resonant coil 212 include copper tubes, thin copper sheets, aluminum tubes, thin aluminum sheets, and polymer tapes from which copper or aluminum is vapor-deposited.

[0060] The two ends of the resonant coil 212 are electrically grounded, with at least one end grounded via a movable tap 213 to allow for fine-tuning of the electrical length of the resonant coil during initial setup of the device or when processing conditions change. Figure 1 Reference numeral 214 indicates another fixed ground. Furthermore, in order to fine-tune the impedance of the resonant coil 212 during the initial setup of the device or when the processing conditions change, a movable tap 215 forms a power supply section between the two grounded ends of the resonant coil 212.

[0061] The plasma generation unit 216 of this embodiment mainly consists of a resonant coil 212, an RF sensor 272, and a matching unit 274. It should be noted that the plasma generation unit may also include a high-frequency power supply 273.

[0062] [Shielding Plate 224]

[0063] like Figure 1 As shown, the shielding plate 224 covers the resonant coil 212 from the radial outside of the processing container 203, is configured to shield the electric field generated by the resonant coil 212, and forms a capacitance component (C component) required to constitute the resonant circuit as one of the components of the resonant circuit between the shielding plate 224 and the resonant coil 212.

[0064] Specifically, the shielding plate 224 is formed using a conductive material such as aluminum alloy. At the lower end of the shielding plate 224, there is a lower flange 227 extending radially inward toward the container, which is disposed on the base plate 248.

[0065] [Protective Component 280]

[0066] like Figure 1 As shown, the protective component 280 is mounted on the bottom plate 248 of the lower container 211 along the inner circumferential surface of the lower end portion of the upper container 210 within the processing container 203, so as to cover the inner circumferential surface of the upper container 210 from the inside.

[0067] Here, when a process is performed in which gas is supplied into the processing container 203 and a film is formed on the wafer 200, gas components and reaction byproducts may sometimes adhere to the inner wall of the processing container 203. In particular, when gas components and reaction byproducts adhere to the lower portion of the processing container 203, stress may be applied to the processing container 203 due to heat, vacuum pressure, etc., causing damage (e.g., cracks) to the inner wall of the processing container 203. In order to suppress the adhesion of gas components and reaction byproducts in the processing container 203, protective members 280 are provided in areas of the processing container 203 where gas components and reaction byproducts are prone to adhere before supplying gas into the processing container 203. This can suppress damage to the processing container 203 (e.g., the generation of cracks), thereby extending the lifespan of the processing container 203.

[0068] In addition, such as Figure 2As shown, the upper container 210 is movable upwards. During maintenance operations such as replacing the protective component 280, the upper container 210 is moved upwards relative to the lower container 211. The protective component 280, which is attached with gaseous components, reaction byproducts, etc., is moved horizontally from the maintenance space (maintenance area) created between the lower end of the upper container 210 and the upper end of the lower container 211 to remove it from the processing container 203. Furthermore, the cleaned protective component 280 or a new protective component 280 is moved horizontally and placed inside the processing container 203 for replacement. At this time, the height to which the upper container 210 can be lifted upwards is limited, and the maintenance area is restricted.

[0069] The height of the protective component 280 in this disclosure is adjusted to be low, so that the protective component 280 can be removed from or installed on the base plate 248 during maintenance operations. At this time, the height of the protective component 280 is lower than the height of the maintenance area. Furthermore, the protective component 280 is removed horizontally from the base plate 248 of the lower container 211 while at a low height. Additionally, the protective component 280 is horizontally mounted on the base plate 248 while at a low height.

[0070] Figure 3 (A) is a top view of the protective component 280. Figure 3 (B) is Figure 3 The side view of (A). Figure 4 (A) is a front view showing the protective component 280 at its lowest height. Figure 4 (B) is Figure 4 A partial sectional view of (A). Figure 4 (C) is a front view showing the protective component 280 at its highest position. Figure 4 (D) is Figure 4 A partial sectional view of (C).

[0071] The protective member 280 is cylindrical and is configured to be divided into two parts along the vertical direction. Specifically, the protective member 280 consists of a first protective member 281, which is disposed on the outer periphery as the upper part, and a second protective member 282, which is disposed on the inner periphery of the first protective member 281 as the lower part. The first protective member 281 and the second protective member 282 are arranged in a substantially concentric circle.

[0072] The distance from the center of the first protective member 281 to its inner peripheral surface is configured to be longer than the distance from the center of the second protective member 282 to its outer peripheral surface. In other words, the inner diameter of the first protective member 281 is larger than the outer diameter of the second protective member 282. Furthermore, the second protective member 282 is housed inside the first protective member 281. Additionally, the distance from the center of the first protective member 281 to its outer peripheral surface is configured to be shorter than the distance from the center of the processing container 203 to its inner peripheral surface. In other words, the outer diameter of the first protective member 281 is smaller than the inner diameter of the processing container 203. Furthermore, the outer peripheral surface of the first protective member 281 is closer to the inner peripheral surface of the processing container 203 than the outer peripheral surface of the second protective member 282. Therefore, within the range from the upper end of the first protective member 281 to the lower end of the second protective member 282, adhesion of the film to the inner surface of the processing container 203 can be suppressed.

[0073] A first protrusion 283, which obliquely protrudes from the lower end to the upper end in the circumferential direction, is formed on the inner peripheral surface of the first protective member 281. A second protrusion 284, which also obliquely protrudes from the lower end to the upper end in the circumferential direction, is formed on the outer peripheral surface of the second protective member 282. The distance from the center of the first protective member 281 to the inner peripheral surface of the first protrusion 283 is longer than the distance from the center of the second protective member 282 to the outer peripheral surface of the second protective member 282.

[0074] Furthermore, the lower end face of the first protrusion 283 is configured to contact the upper end face of the second protrusion 284. That is, the protective member 280 rotates the first protective member 281 in, for example, a counterclockwise direction, thereby causing the lower end face of the first protrusion 283 to slide circumferentially on the upper end face of the second protrusion 284. As a result, the first protective member 281 is adjusted to move upward relative to the second protective member 282, increasing the height of the protective member 280. Alternatively, the protective member 280 rotates the first protective member 281 in, for example, a clockwise direction, thereby causing the lower end face of the first protrusion 283 to slide circumferentially on the upper end face of the second protrusion 284. As a result, the first protective member 281 is adjusted to move downward relative to the second protective member 282, decreasing the height of the protective member 280. In other words, the protective member 280 is configured such that by rotating the first protective member 281 relative to the second protective member 282 in the circumferential direction, the first protective member 281 can be moved in the vertical direction, thereby allowing the height of the protective member 280 to be adjusted. That is, the height of the protective member 280 can be easily adjusted. In this way, by moving the first protective member 281 relative to the second protective member 282 in the vertical direction, the height of the protective member 280 can be adjusted.

[0075] It should be noted that the inclination of the first protrusion 283 and the second protrusion 284 can also be configured as follows: by rotating the first protective member 281 clockwise, the first protective member 281 moves upward relative to the second protective member 282; by adjusting, the height of the protective member 280 is increased; by rotating the first protective member 281 counterclockwise, the first protective member 281 moves downward relative to the second protective member 282, and the height of the protective member 280 is decreased.

[0076] That is, after maintenance is completed, the protective component 280 is set on the base plate 248 at a low height. While set on the base plate 248, the height of the protective component 280 is adjusted by rotating the first protective component 281 relative to the second protective component 282 in the circumferential direction. In other words, before processing the wafer 200 after maintenance, adjusting the height by rotating the protective component 280 in the circumferential direction increases the protection range to prevent gas components and reaction byproducts from adhering to the processing container 203, and reduces the area of ​​adhesion of gas components and reaction byproducts within the processing container 203. In other words, the protective component 280 is configured to be height-adjustable, allowing the height of the protective component 280 to be adjusted according to the desired purpose. It should be noted that the operation of raising the height of the protective component 280 can be performed not only after maintenance is completed but also during maintenance, specifically while the upper container 210 is being lifted upwards.

[0077] like Figure 1 As shown, the protective member 280 is mounted on the base plate 248 of the lower container 211 along the inner circumferential surface of the lower end portion of the upper container 210 of the processing container 203. Therefore, the installation of the protective member 280 is easy. The protective member 280 and the processing container 203 are arranged in a substantially concentric circle. This allows for the even (uniform) suppression of the adhesion of gas components and reaction byproducts on the inner circumferential surface of the processing container 203. The gap between the inner circumferential surface of the processing container 203 and the outer circumferential surface of the protective member 280 is narrower than 2 mm, preferably less than 1 mm. This suppresses the adhesion of gas components and reaction byproducts to the gap between the processing container 203 and the protective member 280. Furthermore, by providing the aforementioned gap between the inner circumferential surface of the processing container 203 and the outer circumferential surface of the protective component 280, it is possible to prevent the inner circumferential surface of the processing container 203 from sticking to the outer circumferential surface of the protective component 280 due to the adhesion of gas components and reaction byproducts. This reduces unnecessary operation time during maintenance caused by the adhesion between the inner circumferential surface of the processing container 203 and the outer circumferential surface of the protective component 280, and avoids the generation of particles when the protective component 280 is peeled off from the processing container 203.

[0078] Furthermore, the protective components 280 are configured to prevent the supplied gas components and reaction byproducts from adhering to the processing container 203. Specifically, the protective components 280 (i.e., the first protective component 281 and the second protective component 282) are formed of, for example, SiO2. This allows the gas components and reaction byproducts to actively adhere to the protective components 280, thereby at least preventing the supplied gas components and reaction byproducts from adhering to the processing container 203. Therefore, the frequency of maintenance such as cleaning and replacement within the processing container 203 can be reduced. In addition, maintenance can be completed simply by replacing the protective components 280, thus shortening equipment downtime.

[0079] [Controller 221]

[0080] like Figure 1 As shown, the controller 221, serving as the control unit, is configured to control APC valves 242 and 243b and vacuum pump 246 via signal line A, base lifting mechanism 268 via signal line B, and heater power adjustment mechanism 276 and impedance variable mechanism 275 via signal line C. Furthermore, the controller 221 is configured to control gate valve 244 via signal line D, RF sensor 272, high-frequency power supply 273 and matching unit 274 via signal line E, and MFCs 252a-252c and valves 253a-253c and 243a via signal line F.

[0081] like Figure 5 As shown, the controller 221 is configured as a computer including a CPU (Central Processing Unit) 221a, RAM (Random Access Memory) 221b, a storage device 221c, and an I / O port 221d. The RAM 221b, storage device 221c, and I / O port 221d are configured to exchange data with the CPU 221a via an internal bus 221e. The controller 221 is connected to an input / output device 222, such as a touch panel or a display.

[0082] Here, the input device 222 is configured to input processing conditions for processing the wafer 200, execution operations for substrate processing, etc. Additionally, the input / output device 222 is configured to display the state of the substrate processing apparatus 100.

[0083] The storage device 221c is composed of, for example, flash memory, HDD (Hard Disk Drive). The storage device 221c can readablely store control programs that control the operation of the substrate processing apparatus, process procedures that record the steps and conditions of substrate processing (described later), and process execution programs for executing the process procedures.

[0084] The process execution program causes the CPU 221a to execute each step of the substrate processing steps described later, combining them in a way that yields a predetermined result, thus functioning as a program. Hereinafter, this process execution program, control program, etc., will be simply referred to as a program (program product). It should be noted that the term "program" used in this specification may refer only to the process execution program, only to the control program, or both. Furthermore, the RAM 221b is configured as a memory area (working area) that temporarily holds programs, data, etc., read by the CPU 221a.

[0085] In this method, processing conditions are stored in storage device 221c. The processing conditions include at least one of the following: temperature of the wafer 200 being processed, pressure of the processing chamber 201, type of gas used to process the wafer 200, flow rate of the gas used to process the wafer 200, and power supplied to the resonant coil 212.

[0086] I / O port 221d is connected to the aforementioned MFC 252a~252c, valves 253a~253c, 243a, 243b, gate valve 244, APC valve 242, vacuum pump 246, RF sensor 272, high-frequency power supply 273, matching device 274, base lifting mechanism 268, heater power adjustment mechanism 276, impedance variable mechanism 275, etc.

[0087] CPU 221a is configured to read and execute a control program from storage device 221c, and to read the process flow from storage device 221c in response to input of operation commands from input / output device 222.

[0088] Furthermore, CPU 221a is configured to control the opening adjustment of APC valve 242, the opening and closing of valve 243b, and the start / stop of vacuum pump 246 via I / O port 221d and signal line A, according to the read process information. In addition, CPU 221a is configured to control the lifting and lowering of base lifting mechanism 268 via signal line B, control the adjustment of the electrical power supply to heater 217b (temperature adjustment) performed by heater power adjustment mechanism 276 and impedance variable mechanism 275 via signal line C, and control the opening and closing of gate valve 244 via signal line D. Furthermore, CPU 221a is configured to control the operation of RF sensor 272, matching unit 274, and high-frequency power supply 273 via signal line E, and control the flow rate adjustment of various gases performed by MFCs 252a-252c and the opening and closing of valves 253a-253c and 243a via signal line F.

[0089] The controller 221 is configured to install the aforementioned program stored in an external storage device (such as a magnetic disk, floppy disk, hard disk, CD, DVD, optical disk, USB memory, memory card, etc.) 223 onto a computer. The storage device 221c and the external storage device 223 constitute a recording medium that can be read by a computer. Hereinafter, they will be simply referred to collectively as a recording medium. In this specification, the term "recording medium" may refer only to the storage device 221c, only to the external storage device 223, or both. It should be noted that providing a program to a computer can be done without using the external storage device 223, but can also be done using a communication mechanism such as the Internet or a dedicated line, or the program provided via the Internet or a dedicated line can be stored on the recording medium for use.

[0090] (2) Substrate processing process

[0091] As one of the substrate processing steps in the manufacturing process of a semiconductor device (equipment) using the aforementioned substrate processing apparatus 100, the substrate processing apparatus 100 is used Figure 6 This section describes a timing example for forming a film containing specified elements on wafer 200. In the following description, the operation of each part constituting the substrate processing apparatus 100 is controlled by controller 221.

[0092] [Settings for Protection Component 280]

[0093] First, before the substrate processing process begins, a protective member 280 is installed inside the processing container 203. At this time, the pressure inside the processing chamber 201 is adjusted to atmospheric pressure. Specifically, the upper container 210 is moved upwards, and the protective member 280 is moved horizontally from the maintenance area, mounted on the base plate 248 along the inner circumferential surface of the lower end portion of the upper container 210. At this time, the protective member 280 and the processing container 203 are arranged approximately concentrically. Furthermore, the gap between the inner circumferential surface of the processing container 203 and the outer circumferential surface of the protective member 280 is less than 2 mm. The height is adjusted by rotating the protective member 280 circumferentially. After the height of the protective member 280 is adjusted, the upper container 210 is moved downwards. Then, the opening of the APC valve 242 is adjusted to bring the pressure inside the processing chamber 201 to the same pressure as the vacuum transfer chamber adjacent to the processing chamber 201, and the next steps S110 to S160 are performed.

[0094] [Substrate handling process S110]

[0095] In the substrate transfer process S100, the wafer 200 is transferred into the processing chamber 201.

[0096] Specifically, the base lifting mechanism 268 lowers the base 217 to the transport position of the wafer 200, so that the wafer ejection pin 266 passes through the through hole 217a of the base 217.

[0097] Next, gate valve 244 opens, and wafer 200 is moved from a vacuum transfer chamber adjacent to processing chamber 201 into processing chamber 201 using a wafer transfer mechanism (not shown). The moved wafer 200 is supported horizontally on wafer ejection pins 266 protruding from the surface of base 217. As wafer 200 is moved into processing chamber 201, the wafer transfer mechanism retracts out of processing chamber 201, closing gate valve 244 and sealing processing chamber 201. Then, base lifting mechanism 268 raises base 217, thereby supporting wafer 200 on the upper surface of base 217.

[0098] [Heating / Vacuum Exhaust Process S120]

[0099] In the heating / vacuum degassing process S120, the wafer 200 that has been moved into the processing chamber 201 is heated.

[0100] Heater 217b is preheated by holding wafer 200 on base 217, on which heater 217b is embedded, thereby heating wafer 200. Here, wafer 200 is heated to a target temperature. Additionally, during the heating of wafer 200, vacuum pump 246 vents the processing chamber 201 via gas exhaust pipe 231, setting the pressure of processing chamber 201 to a predetermined value. Vacuum pump 246 operates at least until the substrate removal process S160, described later, is completed.

[0101] [Reaction gas supply process S130]

[0102] In the reaction gas supply process S130, the supply of the first gas and the second gas as reaction gases is started. Specifically, valves 253a and 253b are opened, and the first gas and the second gas are supplied to the processing chamber 201 while the flow is controlled by MFCs 252a and 252b.

[0103] Additionally, the opening of APC valve 242 is adjusted to control the exhaust from processing chamber 201, so that processing chamber 201 reaches the target pressure. In this way, the exhaust from processing chamber 201 is moderately performed, and the supply of the first gas and the second gas continues until the plasma processing step S140 described later is completed.

[0104] As the first gas, for example, an oxygen-containing gas can be used. As an oxygen-containing gas, for example, oxygen (O2) gas can be used.

[0105] As the second gas, a hydrogen-containing gas can be used, for example. Hydrogen (H2) gas can be used, for example.

[0106] [Plasma processing step S140]

[0107] After the pressure in the processing chamber 201 stabilizes, in the plasma processing step S140, high-frequency power is supplied from the high-frequency power supply 273 to the resonant coil 212 via the RF sensor 272.

[0108] Thus, a high-frequency electric field is formed in the plasma generation space supplied with the first and second gases. At a height equivalent to the electrical midpoint of the resonant coil 212 in the plasma generation space, this electric field excites a ring-shaped induced plasma with the highest plasma density. The plasma-like first and second gases are excited by the plasma and dissociate, generating reactive species such as free radicals (active species) and ions of the elements contained in the first and second gases. Specifically, for example, oxygen-containing oxygen free radicals (oxygen active species), oxygen ions, hydrogen-containing hydrogen free radicals (hydrogen active species), hydrogen ions, and other reactive species are generated.

[0109] Furthermore, free radicals and ions generated by induced plasma are supplied to trenches on the surface of the wafer 200, which is held on the substrate 217 in the substrate processing space. The supplied free radicals and ions react with the sidewalls of the trenches, and the surface layer is modified. Specifically, for example, the silicon layer on the surface is modified into a silicon oxide layer.

[0110] Then, after the predetermined processing time has elapsed, the power supply from the high-frequency power supply 273 is stopped, and the plasma discharge in the processing chamber 201 ceases. Additionally, valves 253a and 253b are closed, stopping the supply of the first and second gases to the processing chamber 201. Thus, the plasma processing step S140 ends. The processing time in this specification refers to the duration of the processing. This is also true in the following description.

[0111] [Vacuum exhaust process S150]

[0112] After the supply of the first and second gases is stopped, in the vacuum exhaust process S150, vacuum exhaust is performed on the processing chamber 201 via the gas exhaust pipe 231. As a result, the first gas, the second gas, and the exhaust gas generated by the reaction of these gases in the processing chamber 201 are discharged to the outside of the processing chamber 201. Then, the opening of the APC valve 242 is adjusted, and the pressure in the processing chamber 201 is adjusted to the same pressure as that in the adjacent vacuum transport chamber (the destination for the wafer 200, not shown).

[0113] [Substrate removal process S160]

[0114] After the processing chamber 201 reaches the prescribed pressure, in the substrate removal process S160, the base 217 descends to the wafer 200 transport position, and the wafer 200 is supported on the wafer ejection pin 266. Then, the gate valve 244 opens, and the wafer transport mechanism removes the wafer 200 from the outside of the processing chamber 201. Thus, the substrate processing process of this method ends.

[0115] [Maintenance Procedure]

[0116] After multiple substrate processing steps, the substrate processing apparatus 100 is maintained. At this time, the opening of the APC valve 242 is adjusted to regulate the pressure inside the processing chamber 201 to atmospheric pressure. Specifically, the first protective member 281 is rotated circumferentially relative to the second protective member 282, adjusting the height of the protective member 280 to lower it, so that the upper container 210 is moved upward to a height sufficient to remove the protective member 280, which contains attached gaseous components and reaction byproducts, from the base plate 248. Then, the protective member 280 is moved horizontally to remove it from the processing container 203 for maintenance.

[0117] (3) Summary

[0118] According to this disclosure, one or more of the following effects can be obtained.

[0119] As explained above, the substrate processing apparatus 100 is provided with a protective member 280 whose height can be adjusted along the inner peripheral surface of the processing container 203. This allows for adjustment of the range by which gas components supplied into the processing container 203, reaction byproducts, and the like adhere to the inner peripheral surface of the processing container 203.

[0120] Furthermore, the protective component 280 can be positioned at an adjustable height in areas within the processing container 203 where gas components and reaction byproducts are prone to adhere, thus suppressing the adhesion of gas components and reaction byproducts to the processing container 203. As a result, crack formation in the processing container 203 can be suppressed, extending its lifespan.

[0121] Furthermore, since the protective component 280 inside the processing container 203 can be replaced by moving the upper container 210 upward, the protective component 280 can be easily replaced.

[0122] Furthermore, since the height of the first protective member 280 can be adjusted by rotating the first protective member 281 in the circumferential direction and moving it in the vertical direction, the height of the protective member 280 can be easily adjusted even in situations where the maintenance area is limited.

[0123] (4) Other methods of this disclosure

[0124] Next, other methods of the aforementioned protective component 280 will be described.

[0125] (Variation Example 1)

[0126] Figure 7 This figure shows a modified example 1 of the above-described protective member. The protective member 290 of this modified example comprises a first protective member 291, which is disposed on the outer periphery and serves as an upper layer, and a second protective member 292, which is disposed on the inner periphery of the first protective member 291 and serves as a lower layer. The first protective member 291 and the second protective member 292 are arranged in a substantially concentric circle shape.

[0127] The distance from the center of the first protective member 291 to the inner peripheral surface of the first protective member 291 is configured to be longer than the distance from the center of the second protective member 292 to the outer peripheral surface of the second protective member 292. That is, the second protective member 292 is housed inside the first protective member 291.

[0128] A protrusion 293 is formed on the inner peripheral surface of the first protective member 291, which is inclined obliquely from the lower end to the upper end in the circumferential direction and protrudes towards the center. Conversely, a recess 294 is formed on the outer peripheral surface of the second protective member 292, which is inclined obliquely from the lower end to the upper end in the circumferential direction and recessed towards the center. The distance from the center of the first protective member 291 to the inner peripheral surface of the protrusion 293 is configured to be longer than the distance from the center of the second protective member 292 to the outer peripheral surface of the recess 294, that is, the distance from the outer peripheral surface of the second protective member 292 to the bottom (also called the bottom surface) of the recess 294.

[0129] Furthermore, the protrusion 293 is configured to slide circumferentially within the recess 294, engaging with it. That is, when the protective member 290 rotates the first protective member 291, for example, counterclockwise, the protrusion 293 slides circumferentially while engaging with the recess 294. This causes the first protective member 291 to move upward relative to the second protective member 292, adjusting the height of the protective member 290. Similarly, when the protective member 290 rotates the first protective member 291, for example, clockwise, the protrusion 293 slides circumferentially while engaging with the recess 294. This causes the first protective member 291 to move downward relative to the second protective member 292, adjusting the height of the protective member 290. In other words, the protective member 290 is configured such that by rotating the first protective member 291 circumferentially relative to the second protective member 292, the first protective member 291 moves vertically, allowing the height of the protective member 290 to be adjusted. In this variation, the same effect as described above can also be achieved.

[0130] It should be noted that the inclination of the protrusion 293 and the recess 294 can also be configured as follows: by rotating the first protective member 291 clockwise, the first protective member 291 moves upward relative to the second protective member 292, thereby increasing the height of the protective member 290; by rotating the first protective member 291 counterclockwise, the first protective member 291 moves downward relative to the second protective member 292, thereby decreasing the height of the protective member 290.

[0131] (Variation Example 2)

[0132] Figure 8 This figure shows a modified example 2 of the above-described protective member. In this modified example, the protective member 300 comprises a first protective member 301, which is disposed on the outer periphery and serves as an upper layer, and a second protective member 302, which is disposed on the inner periphery of the first protective member 301 and serves as a lower layer. The first protective member 301 and the second protective member 302 are arranged in a substantially concentric circle shape.

[0133] The distance from the center of the first protective member 301 to the inner peripheral surface of the first protective member 301 is configured to be longer than the distance from the center of the second protective member 302 to the outer peripheral surface of the second protective member 302. That is, the second protective member 302 is housed inside the first protective member 301.

[0134] A recess 303 is formed on the inner circumferential surface of the first protective member 301, which is inclined and recessed in the circumferential direction from the lower end to the upper end. A protrusion 304 is formed on the outer circumferential surface of the second protective member 302, which protrudes in the circumferential direction from the lower end to the upper end. The distance from the center of the first protective member 301 to the inner circumferential surface of the recess 303, that is, the distance from the inner circumferential surface of the first protective member 301 to the bottom (also called the bottom surface) of the recess 303, is configured to be longer than the distance from the center of the second protective member 302 to the outer circumferential surface of the protrusion 304.

[0135] Furthermore, the protrusion 304 is configured to engage with the recess 303 and slide circumferentially. That is, the protective member 300 is configured such that, by rotating the first protective member 301, for example, counterclockwise, the protrusion 304 slides circumferentially in an engaged state with the recess 303. This causes the first protective member 301 to move upward relative to the second protective member 302, adjusting the height of the protective member 300. Similarly, the protective member 300 is configured such that, by rotating the first protective member 301, for example, clockwise, the protrusion 304 slides circumferentially in an engaged state with the recess 303. This causes the first protective member 301 to move downward relative to the second protective member 302, adjusting the height of the protective member 300. In other words, the protective member 300 is configured such that, by rotating the first protective member 301 circumferentially relative to the second protective member 302, the first protective member 301 moves vertically, allowing adjustment of the height of the protective member 300. In this variation, the same effect as described above can also be achieved.

[0136] It should be noted that the inclination of the protrusion 304 and the recess 303 can also be configured as follows: by rotating the first protective member 301 clockwise, the first protective member 301 moves upward relative to the second protective member 302, thereby increasing the height of the protective member 300; by rotating the first protective member 301 counterclockwise, the first protective member 301 moves downward relative to the second protective member 302, thereby decreasing the height of the protective member 300.

[0137] It should be noted that the above description details specific methods, but this disclosure is not limited to these methods. It will be obvious to those skilled in the art that other methods can be implemented within the scope of this disclosure.

[0138] Furthermore, in the above description, the protective component 280 is formed using SiO2 as an example, but it is not limited to this method. The protective component 280 can also be formed using other materials.

[0139] Furthermore, in the above method, the protective component 280 is configured as being divided into two parts, the first protective component 281 and the second protective component 282, as an example for explanation. However, it is not limited to this and can also be configured to be divided into three or more parts to adjust the height.

[0140] In addition, unless otherwise specified in the above method, each element is not limited to one and may have multiple elements unless otherwise specified in the instruction manual.

[0141] Furthermore, the above-described method illustrates an example of forming a film using a monolithic substrate processing apparatus that processes one or more substrates at a time. This disclosure is not limited to the above-described method; for example, it is also suitable for forming films using a batch substrate processing apparatus that processes multiple substrates at a time. Additionally, the above-described method illustrates an example of forming a film using a substrate processing apparatus with a cold-wall type furnace. This disclosure is not limited to the above-described method; it is also suitable for forming films using a substrate processing apparatus with a hot-wall type furnace.

[0142] When using the above-described substrate processing apparatus, each process can be performed in the same manner and under the same processing steps and conditions as described above, and the same effect as described above can be obtained.

[0143] The above methods and variations can be used in appropriate combinations. The processing steps and conditions can be set to be the same as those in the above methods and variations.

Claims

1. A substrate processing apparatus, characterized in that, include: Processing container, which processes the substrate; A gas supply unit is capable of supplying gas for processing the substrate into the processing container; A protective component, configured along the inner circumferential surface of the processing container, is height-adjustable by circumferential rotation; and The control unit is configured to control the supply of gas and the processing of the substrate after the height of the protective component is adjusted.

2. The substrate processing apparatus according to claim 1, characterized in that, The protective component is divided in the vertical direction and consists of a first protective component as the upper layer and a second protective component as the lower layer.

3. The substrate processing apparatus according to claim 2, characterized in that, The distance from the center of the first protective component to the inner circumferential surface of the first protective component is longer than the distance from the center of the second protective component to the outer circumferential surface of the second protective component.

4. The substrate processing apparatus according to claim 2 or 3, characterized in that, The inner circumferential surface of the first protective component and the outer circumferential surface of the second protective component are respectively provided with protrusions that are inclined in the circumferential direction.

5. The substrate processing apparatus according to any one of claims 2 to 4, characterized in that, The first protective component has a first protrusion that slopes upward from the lower end to the upper end of its inner circumferential surface. The second protective component has a second protrusion that slopes upward from the lower end to the upper end of the outer peripheral surface.

6. The substrate processing apparatus according to claim 5, characterized in that, The lower end face of the first protrusion is connected to the upper end face of the second protrusion.

7. The substrate processing apparatus according to claim 5 or 6, characterized in that, The distance from the center of the first protective component to the inner peripheral surface of the first protrusion is longer than the distance from the center of the second protective component to the outer peripheral surface of the second protective component.

8. The substrate processing apparatus according to any one of claims 2 to 7, characterized in that, The first protective component and the second protective component are configured to be approximately concentric circles.

9. The substrate processing apparatus according to any one of claims 2 to 8, characterized in that, The protective component is configured such that the height of the protective component can be adjusted in the vertical direction by rotating the first protective component in the circumferential direction.

10. The substrate processing apparatus according to any one of claims 5 to 9, characterized in that, The protective component is configured such that its height can be adjusted by sliding circumferentially on the upper surface of the second protrusion via the lower end face of the first protrusion.

11. The substrate processing apparatus according to any one of claims 1 to 10, characterized in that, The protective component is configured to be detachable from the processing container.

12. The substrate processing apparatus according to any one of claims 1 to 11, characterized in that, The processing container consists of an upper container and a lower container, and the upper container is capable of moving upwards. The height at which the protective component is lowered is lower than the height of the space created between the lower end of the upper container and the upper end of the lower container when the upper container is moved upward.

13. The substrate processing apparatus according to any one of claims 1 to 12, characterized in that, The protective component is disposed in the lower container.

14. The substrate processing apparatus according to any one of claims 1 to 13, characterized in that, The gap between the inner circumferential surface of the processing container and the outer circumferential surface of the protective component is configured to suppress the gas from adhering to the gap between the processing container and the protective component.

15. The substrate processing apparatus according to any one of claims 1 to 14, characterized in that, The protective component is configured to at least prevent the supplied gas from adhering to the processing container.

16. The substrate processing apparatus according to any one of claims 1 to 15, characterized in that, The protective component and the processing container are arranged in a generally concentric circle.

17. The substrate processing apparatus according to any one of claims 1 to 16, characterized in that, The height of the protective component is increased before processing the substrate, and then decreased during maintenance.

18. A protective component, characterized in that, The container is arranged along the inner circumferential surface of the processing container for processing the substrate, and its height can be adjusted by rotating it in the circumferential direction.

19. A method for manufacturing a semiconductor device, characterized in that, It has the following processes: The protective member is positioned along the inner circumferential surface of the processing container for processing the substrate, and the height of the protective member is adjusted by rotating it circumferentially; and Gas is supplied into the processing container and the substrate is processed.

20. A program product, characterized in that, A computer causes a substrate processing apparatus to perform the steps of supplying gas into a processing container and processing the substrate, wherein the processing container is provided with a protective member along its inner circumferential surface, the height of which can be adjusted by rotating in the circumferential direction.

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