Multi-chip heat dissipation packaging device of composite substrate and server heat dissipation system

Abstract

The invention relates to a multi-chip heat dissipation packaging device of a composite substrate and a server heat dissipation system. The device comprises a multi-chip heat dissipation packaging structure of the composite substrate, a multi-chip heat dissipation assembly and a supporting assembly. The multi-chip heat dissipation packaging structure of the composite substrate comprises a multi-chip packaging substrate, at least one three-dimensional integrated storage chip of a composite substrate base material and at least one logic chip of the composite substrate base material, wherein the three-dimensional integrated storage chip and the logic chip are arranged on the multi-chip packaging substrate. The composite substrate base material comprises a diamond layer, a diamond / silicon composite bonding layer, a silicon layer and a circuit layer; wherein the thickness range of the diamond layer is 70%-90% of the total thickness of the composite substrate base material chip. According to the invention, the existing heat dissipation limit of a multi-chip heat dissipation packaging device is broken through, and the requirement of stable operation of a multi-chip packaging structure in various high-performance computing scenes is met.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a multi-chip heat dissipation packaging device and server heat dissipation system with a composite substrate. Background Technology

[0002] With the advancement of intelligent semiconductors, chips are rapidly evolving towards higher power, higher integration, higher performance, and smaller size. This places higher demands on the heat dissipation performance of chips. Due to the high power, high integration, high performance, and miniaturization characteristics of chips, more heat is generated per unit volume; they reach their threshold temperature more quickly, thus reducing chip performance, reliability, and lifespan, and even causing system crashes. Therefore, how to quickly and efficiently dissipate the heat from hot spots on the chip is crucial to ensuring its normal operation.

[0003] Therefore, on the one hand, how to quickly and efficiently conduct heat away from the chip's hot spots is crucial to ensuring the chip's normal operation; on the other hand, how to quickly build a suitable server cooling system that can dissipate heat from servers equipped with multi-chip composite substrates in a timely manner to ensure the normal operation of the entire server is also an urgent problem to be solved. Summary of the Invention

[0004] To further meet the stringent demands for higher computing density, greater memory bandwidth, and lower power consumption in fields such as artificial intelligence (AI), high-performance computing (HPC), data centers, and communications, existing technologies employ advanced packaging techniques to achieve high-density integration of multiple heterogeneous chips at the wafer level, and then encapsulate the entire integrated unit onto a traditional organic substrate. While this method significantly improves data transmission speed and energy efficiency, simultaneously addressing the junction temperatures generated by the various heterogeneous chips within the integrated unit presents a stringent and urgent need to improve the performance of this packaging technology, as well as the redesign of novel heat dissipation devices and systems to accommodate it.

[0005] Based on this, this application provides a multi-chip heat dissipation packaging device and a server heat dissipation system on a composite substrate. The multi-chip heat dissipation packaging device on the composite substrate includes a multi-chip heat dissipation packaging structure on the composite substrate, a multi-chip heat dissipation component disposed on the multi-chip heat dissipation packaging structure on the composite substrate, and a support component disposed on the multi-chip heat dissipation packaging structure on the composite substrate and surrounding the multi-chip heat dissipation packaging structure on the composite substrate.

[0006] The multi-chip heat dissipation packaging structure of the composite substrate includes a multi-chip packaging substrate and at least one three-dimensional integrated memory chip and at least one logic chip of the composite substrate disposed on the multi-chip packaging substrate.

[0007] The composite substrate includes a diamond layer, a diamond / silicon composite bonding layer, a silicon layer, and a circuit layer; wherein the thickness of the diamond layer ranges from 70% to 90% of the total thickness of the composite substrate chip.

[0008] In one embodiment, the multi-chip heat dissipation component includes:

[0009] A base, wherein the base is provided with a receiving groove, and the inner wall of the receiving groove is provided with a liquid outlet hole;

[0010] The jetting section has a jetting cavity, and the first inner wall of the jetting section has a plurality of jetting holes. The first inner wall covers the opening of the receiving groove, and the second inner wall of the jetting section has a liquid inlet hole.

[0011] The cooling section includes multiple needle ribs disposed on the bottom wall of the receiving groove.

[0012] In one embodiment, the jet section includes a body and a cover plate. The body has a jet cavity, the bottom wall of which is the first inner wall. The cover plate covers the opening of the jet cavity, and the side wall of the cover plate near the body is the second inner wall.

[0013] In one embodiment, the body includes a jetting element and a jetting plate. The jetting element has a through hole, and the jetting plate has a plurality of jetting holes. The jetting plate and the cover plate respectively cover the openings at both ends of the through hole.

[0014] In one embodiment, the three-dimensional integrated memory chip of the composite substrate includes:

[0015] Composite substrate base material bare die;

[0016] At least two composite substrate high-bandwidth memory modules, wherein the composite substrate high-bandwidth memory modules are interconnected with the composite substrate base die in a first direction;

[0017] At least one vertical heat-conducting element is connected along a first direction to the packaging substrate, the composite substrate base die, and the composite substrate high-bandwidth memory, and conducts heat out of the composite substrate base die and the composite substrate high-bandwidth memory;

[0018] Preferably, the composite substrate base die includes a first diamond layer, a first diamond / silicon composite bonding layer, a first silicon layer, and a first circuit layer;

[0019] The thickness of the first diamond layer ranges from 70% to 98% of the total thickness of the composite substrate base die.

[0020] More preferably, the first diamond layer extends along the outer side of the first silicon layer in the second direction and forms at least one first protrusion, wherein the first protrusion is thermally connected to the vertical heat conductor.

[0021] In one embodiment, the high-bandwidth memory of the composite substrate includes a second diamond layer, a second diamond / silicon composite bonding layer, a second silicon layer, and a second circuit layer.

[0022] The thickness of the second diamond layer ranges from 70% to 98% of the total thickness of the high-bandwidth memory in the composite substrate.

[0023] In one embodiment, the second diamond layer extends along the outer side of the second silicon layer in the second direction and forms at least one second protrusion, wherein the second protrusion is thermally connected to the vertical heat conductor.

[0024] In one embodiment, the vertical heat-conducting element is provided with at least two plate-like structures and is sandwiched between the first protrusion and the second protrusion or between two second protrusions;

[0025] Preferably, the plate-like structure includes trapezoidal or columnar plate-like structures formed from any one or more of diamond, diamond alloy, and copper.

[0026] In one embodiment, the three-dimensional integrated memory chip of the composite substrate includes:

[0027] At least one set of first heat-conducting grooves, with the first protrusion and the second protrusion being equidistantly spaced in a first direction, are through slots for heat conduction;

[0028] The vertical heat-conducting component is configured as a columnar structure that cooperates with the first heat-conducting groove and is sleeved inside the first heat-conducting groove, for conducting the heat of the first diamond layer and the second diamond layer to the vertical heat-conducting component.

[0029] Preferably, the columnar structure includes a cone, column, or rod-shaped columnar structure formed from any one or more of diamond, diamond alloy, and copper.

[0030] This application also provides a server heat dissipation system, including a multi-chip heat dissipation packaging device with a composite substrate as described in any of the above claims, and a cooling circulation loop formed by connecting a liquid supply and return module, a liquid return branch, a heat exchange module, a drive module, and a liquid supply branch.

[0031] The aforementioned multi-chip heat dissipation packaging device and server heat dissipation system based on composite substrates are adaptable to various heterogeneous chips for high-speed heat dissipation. Compared with existing designs, the heat dissipation performance of the three-dimensional integrated memory chip and logic chip on the new composite substrate is improved by at least 2 times. The single-chip reliability of the three-dimensional integrated memory chip and logic chip on the composite substrate is significantly improved, and higher-density interconnection can be achieved more stably through the basic logic layer and multi-chip packaging substrate. This significantly improves the integration of the multi-chip heat dissipation packaging structure, accommodating more three-dimensional integrated memory chips and logic chips on the composite substrate. Furthermore, by setting a polishing layer on the diamond layer, the present invention further ensures the flatness of the interface with the heat dissipation component. This allows for the configuration of a multi-chip heat dissipation component with high heat dissipation efficiency that matches the structure of the composite substrate chip packaging structure without affecting the high thermal conductivity and excellent heat dissipation performance of each composite substrate chip packaging structure in the new composite substrate multi-chip heat dissipation packaging device. This breaks through the existing heat dissipation limits of multi-chip heat dissipation packaging devices, meets the requirements for stable operation of multi-chip packaging structures in various high-performance computing scenarios, and greatly shortens the development cycle and cost of the entire new heat dissipation device and its supporting system. Attached Figure Description

[0032] Figure 1 This is a schematic diagram of a multi-chip heat dissipation packaging device with a composite substrate provided in an embodiment of this application.

[0033] Figure 2 This is a schematic diagram of a multi-chip heat dissipation packaging device with a composite substrate provided in an embodiment of this application.

[0034] Figure 3 This is an exploded view of a multi-chip heat dissipation packaging device with a composite substrate provided in an embodiment of this application.

[0035] Figure 4 This is a schematic diagram of a server heat dissipation system provided in an embodiment of this application.

[0036] Figure 5 This is a schematic diagram of a server heat dissipation system component provided in an embodiment of this application.

[0037] Figure 6 This is a schematic diagram of a server heat dissipation system component provided in an embodiment of this application.

[0038] Figure 7 This is a schematic diagram of a server heat dissipation system component provided in an embodiment of this application.

[0039] Figure 8 This is a schematic diagram of a server heat dissipation system component provided in an embodiment of this application.

[0040] Figure 9This is a schematic diagram of a server heat dissipation system component provided in an embodiment of this application.

[0041] Figure label:

[0042] 200: Three-dimensional integrated memory chip on composite substrate; 210: First circuit layer; 220: Base die on composite substrate; 221: First silicon layer; 222: First diamond / silicon composite bonding layer; 223: First diamond layer; 230: High-bandwidth memory on composite substrate; 231: Second silicon layer and second circuit layer; 232: Second diamond / silicon composite bonding layer; 233: Second diamond layer; 240, 241, 242: Vertical thermal conductive elements; 250: Through-silicon via; 260, 330: Fourth thermal conductive layer;

[0043] 300: Logic chip on composite substrate; 320: Composite substrate; 321: Third silicon layer; 322: Third diamond / silicon composite bonding layer; 323: Third diamond layer;

[0044] 500: Basic Logic Layer;

[0045] 600: Multi-chip package substrate; 610: First multi-chip package substrate; 620: Second multi-chip package substrate;

[0046] 800 (800A): Multi-chip packaged heat dissipation component; 8100: Base; 8100a: Receiving groove; 8100b: Liquid outlet; 8100c: Third ring groove;

[0047] 8200: Jet section; 8200a: Jet cavity; 8200b: First inner wall; 8200c: Second inner wall; 8200d: Liquid inlet; 8200e: Jet hole; 8210: Body; 8211: Jet component; 8211a: Through hole; 8211b: Second annular groove; 8212: Jet plate; 8212a: First annular groove; 8220: Cover plate;

[0048] 8300: Cooling section;

[0049] 8400: First sealing ring; 8410: Second sealing ring; 8420: Third sealing ring;

[0050] OX - First direction;

[0051] 500: Basic logic layer; 600: Multi-chip package substrate; 610: First multi-chip package substrate; 620: Second multi-chip package substrate;

[0052] 12000, Liquid supply and return module; 12100, Liquid supply and return assembly; 12110, Liquid distribution through hole; 12120, Liquid distribution interface; 12130, First mounting through hole; 12200, First terminal module; 12210, Main interface; 12220, Second mounting through hole; 12300, Second terminal module; 12310, Third mounting through hole; 12400, Locking assembly; 12410, Fastener; 12510, First positioning part; 12511, Positioning groove; 12512, Annular mounting groove; 12520, Second positioning part; 12521, Positioning post; 12530, Seal; 123: Heat exchange module; 124: Drive module. Detailed Implementation

[0053] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0054] In the description of this application, it should be understood that if terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" appear, these terms indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0055] Furthermore, where the terms "first" and "second" appear, these terms are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, where the term "multiple" appears, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0056] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0057] In this application, unless otherwise expressly specified and limited, the use of descriptions such as "above" or "below" the second feature indicates that the first and second features are in direct contact or indirect contact via an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. Similarly, "below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0058] It should be noted that if an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. If an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. If so, the terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this application are for illustrative purposes only and do not represent the only possible implementation.

[0059] Example 1

[0060] This embodiment provides a multi-chip heat dissipation packaging structure with a composite substrate, such as Figure 1 As shown, the device includes a three-dimensional integrated memory chip 200 with a composite substrate, a logic chip 300 with a composite substrate, and a multi-chip packaging substrate 600; the composite substrate includes a diamond layer, a diamond / silicon composite bonding layer, a silicon layer, and a circuit layer; wherein the thickness of the diamond layer ranges from 60% to 90% of the total thickness of the chip with the composite substrate.

[0061] Multi-chip thermal packaging structures integrate multiple heterogeneous chips at a high density on a wafer level and then package the entire integrated structure onto a traditional organic substrate, thereby shortening the interconnect distance between chips and effectively improving the performance of the entire multi-chip system. However, to optimize this structure, each heterogeneous chip to be integrated must be developed towards high power, high integration, high performance, and miniaturization. First, the Joule heating of these highly integrated chips will generate local hot spots, causing the temperature to rise and exceed the heat dissipation limit of the chip itself. Second, the high-density integration of multiple heterogeneous chips in a small packaging space will generate huge amounts of heat; if heat dissipation cannot be effectively achieved, it will significantly reduce the performance and reliability of each chip, and may even lead to the overall failure of the entire multi-chip package integrated system. Therefore, this embodiment provides a multi-chip heat dissipation packaging structure with a composite substrate, which can be adapted to various heterogeneous chips for high-speed heat dissipation. In this multi-chip heat dissipation packaging structure with a composite substrate, at least one three-dimensional integrated memory chip 200 and at least one logic chip 300 adopt a novel composite substrate material with high thermal conductivity and capable of efficient thermal expansion in local hot spots. The composite substrate material includes a diamond layer, a diamond / silicon composite bonding layer, a silicon layer and a circuit layer; wherein, the diamond / silicon composite bonding layer is a bonding layer with high thermal conductivity and stable bonding between the atoms of the two solid surfaces formed by bonding the diamond layer and the silicon layer at room temperature.

[0062] First, compared with silicon substrates in the prior art, the heat dissipation performance of the three-dimensional integrated memory chip 200 and logic chip 300 of the novel composite substrate substrate is improved by at least 2 times. The single-chip reliability of the three-dimensional integrated memory chip 200 and logic chip 300 of the composite substrate substrate is significantly improved, and they can achieve higher density interconnection through multi-chip packaging substrates more stably. This significantly improves the integration of the multi-chip heat dissipation packaging structure, accommodates more three-dimensional integrated memory chips 200 and logic chips 300 of the composite substrate substrate, and thus achieves higher computing density, greater memory bandwidth, lower system power consumption and more optimized heat dissipation performance.

[0063] Secondly, because the three-dimensional integrated memory chip 200 and logic chip 300 of the novel composite substrate use a diamond layer with a strong crystal structure and a diamond / silicon composite bonding layer formed by bonding as the chip substrate, it effectively blocks the penetration of metal ions, ensuring that the circuit layer is not damaged by externally penetrated metal ions, thereby extending the service life of the chip die; it solves the problem of chip damage and failure caused by the penetration of metal ions into the substrate by the upper structure in existing chip dies.

[0064] Furthermore, the high thermal conductivity and excellent electrical insulation of the three-dimensional integrated memory chip 200 and logic chip 300 based on the novel composite substrate improve the product scalability of the three-dimensional integrated memory chip 200 and logic chip 300 based on the composite substrate, making them applicable to more scenarios. Specific expansion schemes can be found in the following embodiments.

[0065] Finally, compared with existing chip packaging, which uses a barrier layer in the thermally conductive layer to reduce metal ion penetration, the three-dimensional integrated memory chip 200 and logic chip 300 in this embodiment, which adopt the novel composite substrate, not only have high thermal conductivity and a dense and stable crystal structure, but also effectively reduce the number of thermally conductive layers. This can effectively shorten the distance between the heat-generating points of the three-dimensional integrated memory chip 200 and logic chip 300 and the heat dissipation component 800, which is conducive to quickly conducting the heat of the diamond layer with high thermal conductivity to the external heat dissipation component of the three-dimensional integrated memory chip 200 and logic chip 300 for rapid cooling, minimizing thermal resistance, and ensuring the reliability of the chip heat dissipation packaging structure of the composite substrate.

[0066] To further improve the heat dissipation performance of the bare chip, the bare chip (or chip DIE, or simply DIE) described in this application is an unpackaged semiconductor chip individually cut from a wafer. In this embodiment, the three-dimensional integrated memory chip 200 and logic chip 300 on the composite substrate substrate maximize the thinning of the silicon layer, allowing the three-dimensional integrated memory chip 200 and logic chip 300 on the composite substrate substrate to maximize the utilization of the high thermal conductivity of the diamond layer and the diamond / silicon composite bonding layer. Without affecting the normal operation of the circuit layers, the thickness of the diamond layer in this embodiment can range from 60% to 98% of the total thickness of the chip on the composite substrate substrate. Specifically, the thickness range of the diamond layer can be 60% / 65% / 70% / 75% / 80% / 85% / 90% / 95% / 98% of the total thickness of the chip on the composite substrate substrate, etc. These are not all listed here.

[0067] Specifically, such as Figure 1 As shown, the thickness of the diamond / silicon composite bonding layers 232, 222, and 322 ranges from 2 nm to 10 nm. Specifically, the thickness of the diamond / silicon composite bonding layers 232, 222, and 322 can be 2 nm / 4 nm / 6 nm / 8 nm / 10 nm, etc. These are not all listed here.

[0068] Example 2

[0069] like Figure 1 and Figure 2 As shown, the three-dimensional integrated memory chip 200 based on the composite substrate in this embodiment includes:

[0070] Composite substrate base bare die 220;

[0071] At least two high-bandwidth memory modules 230 on composite substrates are interconnected with a base die 220 on a composite substrate in a first direction. Specifically, each of the high-bandwidth memory modules 230 on the composite substrate is stacked layer by layer on the base die 220 on the first direction, and each layer of high-bandwidth memory modules 230 on the composite substrate is interconnected with the base die 220 on the composite substrate through through-silicon vias 250. This allows more high-bandwidth memory modules 230 to be accommodated in the first direction (i.e., the vertical direction), and effectively expands the memory bandwidth of the multi-chip heat dissipation package structure in a limited planar space.

[0072] At least one vertical heat-conducting element 240 is connected along a first direction to the packaging substrate 600, the composite substrate base die 220, and the composite substrate high-bandwidth memory 230, and conducts high-speed heat dissipation from the composite substrate base die 220 and the composite substrate high-bandwidth memory 230.

[0073] Specifically, the composite substrate base die 220 includes a first diamond layer 223, a first diamond / silicon composite bonding layer 222, a first silicon layer 221, and a first circuit layer 210;

[0074] The thickness of the first diamond layer 223 ranges from 70% to 98% of the total thickness of the composite substrate base die 220. Without affecting the normal operation of the circuit layers, in this embodiment, the thickness of the first diamond layer 223 can range from 60% to 98% of the total thickness of the composite substrate base die 220. Specifically, the thickness of the first diamond layer can be 70% / 75% / 80% / 85% / 90% / 95% / 98% of the total thickness of the composite substrate base die 220, etc. These are not all listed here.

[0075] Specifically, along the first direction, the three-dimensional integrated memory chip 200 is further provided with at least two high-bandwidth memory modules 230 on the side of the composite substrate base die 220 away from the packaging substrate 600. The high-bandwidth memory modules 230 include a second diamond layer 233, a second diamond / silicon composite bonding layer 232, a second silicon layer, and a second circuit layer 231.

[0076] The thickness of the second diamond layer 233 ranges from 70% to 98% of the total thickness of the high-bandwidth memory 230 on the composite substrate. Specifically, the thickness of the second diamond layer 233 can be 70% / 75% / 80% / 85% / 90% / 95% / 98% of the total thickness of the high-bandwidth memory 230 on the composite substrate, etc. These are not all listed here.

[0077] Specifically, such as Figure 2 The high-speed heat dissipation path of the composite substrate is indicated by the pink arrow in the middle. In this embodiment, the multi-chip heat dissipation packaging structure of the composite substrate not only uses a novel composite substrate material with high thermal conductivity for each chip die (including but not limited to logic chip die DIE, memory chip base die DIE, and HBM (basic memory cell chip DIE)), but also includes a diamond layer, a diamond / silicon composite bonding layer, a silicon layer, and a circuit layer. In the second direction, it can realize comprehensive high-speed uniform temperature heat transfer for a system-on-a-chip integrated body formed by high-density integration of multiple heterogeneous chips, avoiding the formation of local hot spots on the surface of a single chip or the stacked chip layers, which would lead to excessively high local temperature and failure of the entire packaging structure.

[0078] Secondly, in this embodiment, the three-dimensional integrated memory chip 200 on the composite substrate further collects the heat generated by the composite substrate base die 220 and the high-bandwidth memory 230 of each layer of the composite substrate by setting a vertical heat-conducting component 240, and conducts it quickly into the environment through the multi-chip packaging substrate 600 or heat dissipation component 800. This achieves efficient heat dissipation for the three-dimensional integrated memory chip 200 on the composite substrate, which can further improve its stacking density and provide technical support for AI training processing, scientific computing, and high-performance computing of massive data. Among them, various heterogeneous chips include, but are not limited to, at least one of memory chips, logic chips, image processing chips, and passive components.

[0079] like Figure 1-2As shown, in one possible implementation, the three-dimensional integrated memory chip 200 can be stacked and packaged from multiple high-bandwidth memory chips 230 on the composite substrate and interconnected through silicon vias 250. This results in a significant height difference between the chip and the logic chip 300 on the composite substrate, making it difficult to adapt conventional heat dissipation components and limiting the scalability of the packaging structure. Therefore, in this embodiment, the logic chip 300 on the composite substrate includes a third diamond layer 323, a third diamond / silicon composite bonding layer 322, a third silicon layer 321, and a third circuit layer 310. Specifically, the thickness, width, and volume of the third diamond layer 323 can be adjusted according to the size of the three-dimensional integrated memory chip 200 on the composite substrate. This allows for better adaptation to the subsequent assembly of the heat dissipation components 800. Furthermore, adjusting the parameters of the third diamond layer 323 to adapt the packaging can further improve the stability of the multi-chip heat dissipation packaging structure while ensuring high-speed heat dissipation of the logic chip.

[0080] like Figure 1 As shown, in one possible implementation, the multi-chip heat dissipation packaging structure of this embodiment further includes a fourth thermally conductive layer 260, 330 and a heat dissipation component 800; and the junction temperature generated by the three-dimensional integrated memory chip and the logic chip on the composite substrate is rapidly transferred to the environment through the fourth thermally conductive layer 260, 330 and the heat dissipation component 800, significantly improving the heat dissipation efficiency of the chip die, thereby reducing the junction temperature of the chip die. Furthermore, due to the strong crystal structure of the diamond / silicon composite bonding layer and the diamond layer, the number of layers in the fourth thermally conductive layer 260, 330 is effectively reduced, the process difficulty of the fourth thermally conductive layer 260, 330 is reduced, the yield of the multi-chip heat dissipation packaging structure is improved, and the interface thermal resistance is reduced.

[0081] Example 3

[0082] like Figures 1 to 2 As shown, the difference between this embodiment and the above embodiment is that, in the multi-chip heat dissipation packaging structure of the composite substrate in this embodiment, the composite substrate base die 200 is provided with a first diamond layer 223, and each layer of the high bandwidth memory of the composite substrate is provided with a second diamond layer 233; specifically, the first diamond layer 223 extends along the outside of the first silicon layer 221 in the second direction and forms at least one first protrusion, wherein the first protrusion is connected to the vertical heat conductor 240.

[0083] The second diamond layer 233 extends along the outer side of the second silicon layer 231 in the second direction and forms at least one second protrusion, wherein the second protrusion is connected to the vertical heat conductor 240.

[0084] like Figure 1 As shown, in one possible implementation, the vertical heat conductor 240 is provided with at least two plate-like structures and is sandwiched between the first protrusion and the second protrusion or between two second protrusions;

[0085] In one possible implementation, the plate-like structure includes trapezoidal or cylindrical plate-like structures formed from any one or more of diamond, diamond alloy, and copper.

[0086] For details, please refer to Figure 2 As shown, the first diamond layer 223 extends along the outer side of the first silicon layer 221 in the second direction to form a first protrusion; the second diamond layer 233 extends along the outer side of the second silicon layer 231 in the second direction to form a second protrusion; the vertical heat conductor 240 is sandwiched between the first protrusion and the second protrusion to collect the heat transferred by the first diamond layer 223 and the second diamond layer 233, and conducts it sequentially to the heat dissipation assembly 800 or the multi-chip package substrate 600 for high-speed heat dissipation through multiple vertical heat conductors 240. That is, referring to the red arrow, the heat generated by the first silicon layer 221 and the first circuit layer 210 is uniformly heated by the first diamond / silicon composite bonding layer 222 and the first diamond layer 223 and transferred to the first protrusion, and then conducted in the first direction through the vertical heat conductor 240 sandwiching the first protrusion to the heat dissipation assembly 800 or the multi-chip package substrate 600 for high-speed heat dissipation. The heat generated by the second silicon layer 231 and the second circuit layer is homogenized and transferred to the second protrusion through the second diamond / silicon composite bonding layer 232 and the second diamond layer 233. Then, it is conducted in the first direction through the vertical heat conductor 240 sandwiching the second protrusion to the heat dissipation assembly 800 or the multi-chip packaging substrate 600 for high-speed heat dissipation. This effectively solves the problem of the enormous heat generated by the concentrated stacking of high-bandwidth memory 230, which previously limited the integration density of the entire stack.

[0087] To better address the heat dissipation issue of high-bandwidth memory chips, the first diamond layer 223 extends along the outer side of the first silicon layer 221 in the second direction, forming multiple first protrusions; the second diamond layer 233 extends along the outer side of the second silicon layer 231 in the second direction, forming multiple second protrusions; and multiple vertical heat-conducting elements are correspondingly sandwiched between each of the first and second protrusions for heat conduction. For example, such as... Figure 5 and Figure 6As shown, the first diamond layer 223 extends along the outer side of the first silicon layer 221 in the second direction and forms two first protrusions; the second diamond layer 233 extends along the outer side of the second silicon layer 231 in the second direction and forms two second protrusions; the vertical heat-conducting elements 241 and 242 are respectively sandwiched between the first and second protrusions on each side. The heat conduction path is shown in the figure. Figure 6 As shown by the red arrow, this embodiment can greatly shorten the distance for heat homogenization, and the temperature distribution of each layer in the three-dimensional integrated memory chip 200 of the composite substrate is more uniform, giving it better thermal performance and lower thermal resistance.

[0088] Specifically, the number, width, shape, and other specific parameters of the protrusions and corresponding vertical heat-conducting components are adjusted to the number of packaging layers and heat generation of the three-dimensional integrated memory chip 200 on the composite substrate. By adapting the packaging to the corresponding parameters of the protrusions and corresponding vertical heat-conducting components, the stability and thermal performance of the multi-chip heat dissipation packaging structure can be further improved while ensuring high-speed heat dissipation of the three-dimensional integrated memory chip 200 on the composite substrate.

[0089] Example 4

[0090] like Figure 7 and Figure 8 As shown, the difference between this embodiment and the above embodiments is that, in the multi-chip heat dissipation packaging structure of the composite substrate described in this embodiment, the three-dimensional integrated memory chip of the composite substrate includes:

[0091] At least one set of first heat-conducting grooves are provided, with the first protrusion and the second protrusion being equidistantly spaced in a first direction, serving as through slots for heat conduction; specifically, the through slots can be equidistantly arranged along a second direction or equidistantly arranged perpendicular to the second direction.

[0092] The vertical heat-conducting components 241 and 242 are configured as columnar structures that cooperate with the first heat-conducting groove and are sleeved inside the first heat-conducting groove, for conducting the heat of the first diamond layer and the second diamond layer to the vertical heat-conducting components 241 and 242.

[0093] Specifically, the columnar structure includes any one or more of diamond, diamond alloy, and copper forming a cone, column, or rod-shaped columnar structure.

[0094] Specifically, the number, width, shape, and other specific parameters of the first heat-conducting groove and its cooperating vertical heat-conducting component are adjusted according to the number of packaging layers and heat generation of the three-dimensional integrated memory chip 200 on the composite substrate. By adapting the packaging to the corresponding parameters of the first heat-conducting groove and its cooperating vertical heat-conducting component, the stability and thermal performance of the multi-chip heat dissipation packaging structure can be further improved while ensuring high-speed heat dissipation of the three-dimensional integrated memory chip 200 on the composite substrate.

[0095] In one possible implementation, the multi-chip packaging substrate 600 further includes a first packaging substrate 610 electrically connected to the circuit layer; or a first packaging substrate 610 and a second packaging substrate 620 sequentially electrically connected to the circuit layer. The first packaging substrate 610 is in thermal contact with the vertical heat conductors 241 and 242, thereby allowing the heat generated by the three-dimensional integrated memory chip 200 on the composite substrate to be quickly transferred to the environment through the vertical heat conductors 241 and 242. This enables timely dissipation of heat during the operation of the memory circuit, thereby greatly improving the operating power of the three-dimensional integrated memory chip 200 on the composite substrate and preventing device damage due to heat accumulation.

[0096] Example 3

[0097] like Figure 2 As shown, in this embodiment, on the one hand, the diamond layer 323 of the existing composite substrate chip die 300 is extremely difficult to grind when packaging a multi-chip heat dissipation component, which will lead to new problems such as unevenness on the contact surface between the diamond layer 23 and the heat dissipation component, resulting in excessive contact thermal resistance. On the other hand, in order to further meet the heat dissipation requirements of more chip packaging or multi-chip simultaneous high-frequency continuous operation under extreme conditions, this embodiment differs from the above embodiment in that it provides a novel composite substrate multi-chip heat dissipation packaging device, including a composite substrate multi-chip heat dissipation packaging structure, a multi-chip heat dissipation component 800A disposed on the composite substrate multi-chip heat dissipation packaging structure, and a support component 1000A disposed on the composite substrate multi-chip heat dissipation packaging structure and surrounding the composite substrate multi-chip heat dissipation packaging structure; wherein, the support component 1000A is disposed on the multi-chip packaging substrate to protect the three-dimensional integrated memory chip 200 and the composite substrate chip die 300 in the package from being squeezed by the multi-chip heat dissipation component 800A.

[0098] The multi-chip heat dissipation packaging structure of the composite substrate includes a multi-chip packaging substrate 600 and at least one three-dimensional integrated memory chip 200 and at least one logic chip 300 of the composite substrate disposed on the multi-chip packaging substrate.

[0099] The composite substrate includes a diamond layer, a diamond / silicon composite bonding layer, a silicon layer, and a circuit layer; wherein the thickness of the diamond layer ranges from 70% to 90% of the total thickness of the composite substrate chip.

[0100] Specifically, the logic chip 300 on the composite substrate includes a polishing layer 324, a diamond layer 323, a diamond / silicon composite bonding layer 322, a silicon layer, and a circuit layer 321; wherein the thickness of the diamond layer 323 ranges from 70% to 90% of the total thickness of the composite substrate chip 300.

[0101] The thickness of the polishing layer 324 ranges from 1% to 7% of the total thickness of the composite substrate chip die 300 (in other words, the thickness of the polishing layer 324 ranges from 1% / 2% / 3% / 4% / 5% / 6% / 7% of the total thickness of the composite substrate chip die, etc. Examples are not provided here). The thickness of the diamond layer 323 ranges from 70% to 90% of the total thickness of the composite substrate chip die 300; (in other words, the thickness of the diamond layer 323 can be 70% / 75% / 80% / 85% / 90% of the total thickness of the composite substrate chip die 300, etc. Examples are not provided here). The total thickness of the other diamond / silicon composite bonding layer 322, silicon layer, and circuit layer 321 ranges from 3% to 21% of the total thickness of the composite substrate chip die; (in other words, the total thickness of the other diamond / silicon composite bonding layer 322, silicon layer, and circuit layer 321 ranges from 3% / 5% / 8% / 10% / 13% / 15% / 18% / 20% / 21% of the total thickness of the composite substrate chip die, etc. These are not listed here individually).

[0102] Specifically, such as Figure 3 As shown in the exploded view, the multi-chip heat dissipation component 800A provided in this embodiment includes: a base 8100, a jet section 8200, and a cooling section 8300.

[0103] In the aforementioned multi-chip heat dissipation assembly 800A, the base 8100 has a receiving groove 8100a, and the inner wall of the receiving groove 8100a has a liquid outlet hole 8100b. The jetting section 8200 has a jetting cavity 8200a, the first inner wall 8200b of the jetting section 8200 has a plurality of jetting holes 8200e, the first inner wall 8200b covers the opening of the receiving groove 8100a, and the second inner wall 8200c of the jetting section 8200 has a liquid inlet hole 8200d. The cooling section 8300 includes a plurality of pin ribs 8320, which are disposed on the bottom wall of the receiving groove 8100a.

[0104] In the process of cooling at least one three-dimensional integrated memory chip 200A and composite substrate chip die in the chip heat dissipation packaging structure of the composite substrate, the multi-chip heat dissipation component 800A described above first attaches the side of the base 8100 away from the jet section 8200 to the upper surface of the second thermally conductive layer 3A of at least one three-dimensional integrated memory chip 200A and composite substrate chip die in the chip heat dissipation packaging structure of the composite substrate. Then, coolant is injected into the liquid inlet 8200d, the coolant enters the jet cavity 8200a, and then passes through the narrow jet hole 8200e at a high speed to the pin ribs in the receiving groove 8100a. The jet impingement heat exchange is enhanced. After the coolant completes the heat exchange, it is discharged through the outlet hole 8100b. The jet section 8200 and the base 8100 are designed to be separate. At the same time, the cooling section 8300, which houses the tank 8100a, is also designed to be separate from the base 8100. When the pins in the cooling section 8300 are misaligned, bent, or damaged, the base 8100 and the jet section 8200 can be directly separated. Then the cooling section 8300 can be taken out for repair and replacement, thereby improving the utilization rate of the base 8100 and the jet section 8200. Furthermore, the cooling section 8300 with different arrangements and shapes of pins can be placed according to the actual needs of the multi-chip package.

[0105] like Figure 3 As shown in the exploded view, in one embodiment, the jet section 8200 includes a body 8210 and a cover plate 8220. The body 8210 has a jet cavity 8200a, the bottom wall of which is a first inner wall 8200b. The cover plate 8220 covers the opening of the jet cavity 8200a, and the side wall of the cover plate 8220 near the body 8210 is a second inner wall 8200c. The second inner wall 8200c has a liquid inlet hole 8200d, thereby making the liquid inlet hole 8200d and the jet hole 8200e... With parallel axes, the coolant enters the jet chamber 8200a through the inlet hole 8200d for buffering, and then directly impacts the jet hole 8200e on the bottom wall of the body 8210. Through the narrow jet hole 8200e, the coolant impacts the needle ribs in the receiving tank 8100a at a high speed to enhance heat exchange. After completing the heat exchange, the coolant is discharged through the outlet hole 8100b. The cover plate 8220 is designed separately from the body 8210, so the inside of the jet chamber can be cleaned or repaired by opening the cover plate 8220.

[0106] In one embodiment, the body 8210 includes a jetting element 8211 and a jetting plate 8212. The jetting element 8211 has a through hole 8211a. The side of the jetting plate 8212 near the jetting element 8211 is a first inner wall 8200b. The jetting plate 8212 has a plurality of jetting holes 8200e. The jetting plate 8212 and the cover plate 8220 respectively cover the openings at both ends of the through hole 8211a.

[0107] In this embodiment, the jetting component 8211 and the jetting plate 8212 are designed separately, so that the jetting plate 8212 with different specifications of jetting holes 8200e can be replaced. After the jetting plate 8212 and the cover plate 8220 cover the openings at both ends of the through hole 8211a respectively, the structure of the through hole 8211a is enclosed as the jetting cavity 8200a.

[0108] In one embodiment, the multi-chip heat dissipation assembly 800A further includes a first sealing ring 8400. The jet plate 8212 has a first annular groove 8212a, which surrounds a plurality of through holes 8211a. The first sealing ring 8400 is partially located in the first annular groove 8212a. The first sealing ring 8400 abuts against one end face of the jet member 8211 away from the cover plate 8220, and seals the gap between the jet plate 8212 and the jet member 8211 through the first sealing ring 8400.

[0109] In one embodiment, the multi-chip heat dissipation assembly 800A further includes a second sealing ring 8410. The body 8210 has a second annular groove 8211b, that is, the jet element 8211 has a second annular groove 8211b. The second annular groove 8211b surrounds the opening of the jet cavity 8200a. The second sealing ring 8410 is partially located in the second annular groove 8211b. The second sealing ring 8410 abuts against the cover plate 8220, and seals the gap between the cover plate 8220 and the jet element 8211 through the second sealing ring 8410.

[0110] like Figure 5 As shown, in one embodiment, the multi-chip heat dissipation assembly 800A further includes a third sealing ring 8420. The base 8100 has a third annular groove 8100c, which surrounds the opening of the receiving groove 8100a and surrounds the plurality of jet holes 8200e. The third sealing ring 8420 is partially located in the third annular groove 8100c and abuts against the jet portion 8200. Specifically, the third sealing ring 8420 abuts against the end of the jet plate 8212 away from the jet member 8211, and seals the gap between the jet plate 8212 and the base 8100 through the third sealing ring 8420.

[0111] In one embodiment, the liquid outlet 8100b is formed on the side wall of the receiving tank 8100a, and the first inner wall 8200b and the second inner wall 8200c are arranged opposite each other along the axial direction of the jet hole 8200e, so that the axis of the liquid inlet 8200d and the jet hole 8200e is perpendicular to the axis of the liquid outlet 8100b, so that the liquid can fully cool the cooling section 8300 and then be discharged through the liquid outlet 8100b.

[0112] like Figure 5As shown, in one embodiment, there are two sets of liquid outlet holes 8100b, which are located on two opposite sidewalls of the receiving tank 8100a along the first direction OX, which is perpendicular to the axial direction of the jet hole 8200e. There are also two sets of liquid inlet holes 8200d, located at both ends of the second inner wall 8200c along the first direction OX. In this embodiment, the first direction OX is the length direction of the multi-chip heat dissipation assembly 800A. This allows the two sets of liquid inlet holes 8200d and the two sets of liquid outlet holes 8100b to respectively enter and exit the multi-chip heat dissipation assembly 800A at both ends of the first direction OX, increasing the flow rate of the coolant and improving the cooling efficiency of the chip heat dissipation packaging structure of the composite substrate.

[0113] In one embodiment, the cooling section 8300 further includes a connecting plate. A plurality of pin ribs are evenly distributed on one side of the connecting plate, and the other side of the connecting plate abuts against the bottom wall of the receiving groove 8100a, so that the pin ribs are indirectly disposed on the bottom wall of the receiving groove 8100a. Both the pin ribs and the connecting plate have a three-period minimal curved surface structure. Alternatively, the pin ribs can be directly disposed within the receiving groove 8100a of the base 8100, without the connecting plate.

[0114] Preferably, the pin rib and the connecting plate are integrally formed. In other embodiments, the pin rib is separately disposed on the connecting plate and connected by snap-fit, welding, bonding, or other methods. In this embodiment, the pin rib and the connecting plate are integrally formed during processing after the shape design, thereby facilitating the removal and replacement of the cooling section 8300.

[0115] Specifically, the projection of the needle rib along the 8200e axis of the jet hole onto the connecting plate is trapezoidal, wavy, or other shapes. The porosity, cell unit size, and other parameters of the three-period minimal surface and TPMS structure can be designed separately according to the actual operating conditions. Specifically, the cell unit structure of the needle rib can be the Primitive (P-type) unit, which has good mechanical properties in the oblique diagonal direction, such as the (111) direction. The cell unit structure of the needle rib can also be I-WP (I-type), which has outstanding mechanical properties in the (100) axial direction and weaker performance in the oblique diagonal direction. The pore structure and fluid permeability of the I-type unit are suitable for the biomedical field, such as in artificial bone scaffolds, which can provide a suitable environment for tissue fluid flow and bone cell growth. It can also be used in heat exchanger structures that require fluid flow. The cell unit structure of the needle rib can also be Gyroid (G-type), which is a typical three-dimensional continuous double-connected structure with a smooth surface and no obvious edges. The advantages of this structure lie in its moderate specific surface area, balanced mechanical properties, and a combination of toughness and permeability. The cell unit structure of the needle-ribbed structure can also be Neovius (N-type), possessing a unique multi-connected 8211a gap structure, which often exhibits strong anisotropy in monoclinic crystal system designs. This characteristic makes it suitable for applications requiring directional control of mechanical properties. The cell unit structure of the needle-ribbed structure can also be one or more of the following: topological hybrid units, symmetric deformation units, and hierarchical units within the derived hybrid cell unit structure.

[0116] Specifically, the above components are connected by connecting members that are sequentially inserted through the cover plate 8220, the jetting member 8211, the jetting plate 8212 and the base 8100, so as to achieve tight contact and seal the gap between the components.

[0117] In the process of cooling at least one three-dimensional integrated memory chip 200A and the composite substrate substrate chip die in the chip heat dissipation packaging structure of the aforementioned multi-chip heat dissipation component 800A, the base 8100 is first attached to the surface of the part to be cooled on the side opposite to the jet section 8200. Then, coolant is injected into the liquid inlet 8200d through a cold source. The coolant enters the jet chamber 8200a and then passes through the narrow jet hole 8200e at a high speed to jet-impact the pins and ribs in the receiving groove 8100a to enhance heat transfer. After the coolant completes the heat transfer, it exits through the outlet. Liquid is discharged from the orifice 8100b and returned to the cold source. Thus, through the separate design of the jet section 8200 and the base 8100, the cooling section 8300 that accommodates the tank 8100a is also separated from the base 8100. When the needle ribs in the cooling section 8300 are displaced, bent, or damaged, the base 8100 and the jet section 8200 can be directly separated, and then the cooling section 8300 can be taken out for repair and replacement. This improves the utilization rate of the base 8100 and the jet section 8200, and cooling sections 8300 with different arrangements and shapes of needle ribs can be placed according to actual cooling needs.

[0118] Example 5

[0119] like Figures 4 to 9 As shown, this embodiment designs a rapidly adaptable server cooling system to match the packaging device shown in Embodiment 3. This system can be developed and designed simultaneously with the packaging device, saving the overall system development cycle. The server cooling system includes a multi-chip heat dissipation packaging device on the composite substrate, a first liquid supply and return module 12000B, a liquid return branch, a heat exchange module 123, a drive module 124, a liquid supply branch, and a second liquid supply and return module 12000A, forming a cooling circulation loop. In the multi-chip heat dissipation packaging device on the composite substrate, the low-temperature cooling medium in the multi-chip heat dissipation component 800A absorbs the heat generated by each chip within the multi-chip heat dissipation packaging structure of the composite substrate to form a high-temperature cooling medium. The high-temperature cooling medium flows through the first liquid supply and return module 12000B into the heat exchange module 123 for cooling and cooling to form a low-temperature cooling medium. The cooled low-temperature cooling medium is then driven by the drive module 124 to the second liquid supply and return module 12000A, which supplies liquid to each of the required multi-chip heat dissipation components 800A for circulating heat dissipation.

[0120] Specifically, the supply and return liquid module 12000 includes a supply and return liquid assembly 12100, a first terminal module 12200, and a second terminal module 12300. The supply and return liquid assembly 12100 is at least one. Each supply and return liquid assembly 12100 is provided with a liquid distribution through-hole 12110 and a liquid distribution interface 12120 communicating with the liquid distribution through-hole 12110. Adjacent supply and return liquid assemblies 12100 are detachably connected and sealed together, so that the liquid distribution through-holes 12110 are sequentially connected to form a liquid distribution channel. The first terminal module 12200 is sealed and installed at one end of the liquid distribution channel and is provided with a main interface 12210 communicating with the liquid distribution channel. The second terminal module 12300 is sealed and installed at the other end of the liquid distribution channel and is used to close the liquid distribution channel.

[0121] In the above embodiment, the supply and return fluid module 12000, including the supply and return fluid components 12100, the first terminal module 12200, and the second terminal module 12300, are all modular structures that can be pre-fabricated in the factory. This allows users to select different numbers of supply and return fluid components 12100 according to actual site layout requirements. Each supply and return fluid component 12100 is then assembled with the first terminal module 12200 and the second terminal module 12300 to obtain a compatible supply and return fluid module 12000. This eliminates the need for one-time mold manufacturing and customized complex dispensing structures for each heat-generating device, saving costs. It offers flexible installation and can be adapted to servers from different manufacturers or rack layouts, improving the adaptability and scalability of the supply and return fluid module 12000. Furthermore, when a dispensing branch or valve malfunctions, only the corresponding module needs to be replaced, reducing maintenance costs, shortening maintenance cycles, and enhancing the practicality of the supply and return fluid module 12000.

[0122] It should be noted that different types and sizes of connectors or devices can be installed at the liquid distribution interface 12120 to meet different needs. Specifically, in this embodiment, a pagoda connector can be installed at the liquid distribution interface 12120, which connects the supply and return liquid assembly 12100 and the liquid distribution pipe. Similarly, a chuck can be installed at the main interface 12210, which connects the first terminal module 12200 and the main flow channel. In other embodiments, valve modules, flow meters, temperature control devices, etc., can also be installed at the liquid distribution interface 12120.

[0123] The two adjacent supply and return fluid assemblies 12100 can be connected by screwing, plugging, snapping, or other detachable means. The first terminal module 12200 can be installed at one end of the distribution channel by screwing, plugging, snapping, or other detachable means. The second terminal module 12300 can be installed at the other end of the distribution channel by screwing, plugging, snapping, or other detachable means.

[0124] like Figure 5As shown, the supply and return fluid module 12000 further includes a locking component 12400. The locking component 12400 is configured to fix the first terminal module 12200, the second terminal module 12300, and each supply and return fluid component 12100 as a single unit when the various dispensing through holes 12110 are sequentially connected to form a dispensing channel, and the first terminal module 12200 and the second terminal module 12300 are respectively installed at both ends of the dispensing channel. Thus, no relative movement occurs between the first terminal module 12200 and the supply and return fluid component 12100, between two adjacent supply and return fluid components 12100, or between the supply and return fluid component 12100 and the second terminal module 12300, ensuring the dispensing channel remains continuous and stable, and improving the reliability of the supply and return fluid module 12000.

[0125] The locking component 12400 can be configured as a snap-fit ​​locking structure, a binding locking structure, a clamping locking structure, or other locking structures.

[0126] like Figure 5 , Figure 6 , Figure 8 and Figure 9 As shown, optionally, each supply and return fluid assembly 12100 is provided with a first mounting through hole 12130 spaced apart from the liquid distribution through hole 12110. The first terminal module 12200 is provided with a second mounting through hole 12220 corresponding to the first mounting through hole 12130. The second terminal module 12300 is provided with a third mounting through hole 12310 corresponding to the first mounting through hole 12130. The locking assembly 12400 includes a fastener 12410. The fastener 12410 is configured to pass through the third mounting through hole 12310, each of the first mounting through holes 12110 and forming a liquid distribution channel, and the first terminal module 12200 and the second terminal module 12300 are respectively installed at both ends of the liquid distribution channel, thereby fixing the first terminal module 12200, the second terminal module 12300 and each supply and return fluid assembly 12100 into one unit. Thus, after the first terminal module 12200, each fluid supply and return component 12100 and the second terminal module 12300 are aligned and assembled into one unit, the fasteners 12410 are passed through the first mounting through hole 12130, each first mounting through hole 12130 and the second mounting through hole 12220 respectively for fastening, thereby achieving the effect of limiting and locking, and improving the reliability of the fluid supply and return module 12000.

[0127] Specifically, in this embodiment, the fastener 12410 includes a bolt and a first nut. One end of the bolt abuts against the third terminal module, and the other end of the bolt passes sequentially through the third mounting through hole 12310, each of the first mounting through holes 12130 and the second mounting through hole 12220, and is threadedly connected to the first nut. The first nut is located on the side of the first terminal module 12200 away from the second terminal module 12300, and abuts against the first terminal module 12200.

[0128] In other embodiments, the fastener 12410 may also include a screw, a second nut, and a third nut. The screw passes sequentially through the third mounting through hole 12310, each of the first mounting through holes 12130, and the second mounting through hole 12220. Both ends of the screw are threadedly connected to the second nut and the third nut, respectively. The second nut and the third nut are located on opposite sides of the first terminal module 12200 and the second terminal module 12300, respectively, and engage in corresponding abutment with the first terminal module 12200 and the second terminal module 12300.

[0129] The number of first mounting through holes 12130 on the fluid supply and return assembly 12100, the number of second mounting through holes 12220 on the first terminal module 12200, the number of third mounting through holes 12310 on the second terminal module 12300, and the number of fasteners 12410 can all be flexibly adjusted according to actual usage needs.

[0130] like Figure 5 , Figure 6 , Figure 8 and Figure 9 As shown, specifically in this embodiment, the number of first mounting through holes 12130 in the supply and return fluid assembly 12100 is at least two, and each first mounting through hole 12130 is evenly arranged around the axis of the dispensing through hole 12110. The number of second mounting through holes 12220, the number of third mounting through holes 12310, and the number of fasteners 12410 are all the same as the number of first mounting through holes 12130 in the supply and return fluid assembly 12100. Each second mounting through hole 12220, each third mounting through hole 12310, and each fastener 12410 are all set in a one-to-one correspondence with each first mounting through hole 12130 in the supply and return fluid assembly 12100. In this way, there are multiple installation postures between two adjacent supply and return fluid assemblies 12100, making the orientation of the dispensing interface 12120 on the supply and return fluid assembly 12100 adjustable to meet the needs of different layout scenarios and improve the practicality of the supply and return fluid module 12000.

[0131] Specifically, the axis of the first mounting through hole 12130 is parallel to the axis of the dispensing through hole 12110. There are four first mounting through holes 12130, four second mounting through holes 12220, and four third mounting through holes 12310. The four first mounting through holes 12130 are correspondingly located at the four corners of the supply and return liquid assembly 12100, the four second mounting through holes 12220 are correspondingly located at the four corners of the first terminal module 12200, and the four third mounting through holes 12310 are correspondingly located at the four corners of the second terminal module 12300. Thus, each dispensing interface 12120 can face any of the four sides surrounding the supply and return liquid assembly 12100 as needed.

[0132] like Figure 6 , Figure 8 and Figure 9 As shown, in one embodiment, the two ends of the liquid dispensing through-hole 12110 extend to the two ends of the liquid supply and return assembly 12100, respectively, and the liquid dispensing interface 12120 is disposed on the side wall of the liquid dispensing through-hole 12110. The two ends of the liquid supply and return assembly 12100 are respectively provided with a first positioning part 12510 and a second positioning part 12520. One of the first terminal module 12200 and the second terminal module 12300 is provided with a corresponding first positioning part 12510, and the other is provided with a corresponding second positioning part 12520. The first positioning part 12510 is used for positioning and cooperating with the second positioning part 12520. Thus, the first positioning part 12510 and the second positioning part 12520 can play a positioning role when the first terminal module 12200 is assembled with the supply and return liquid assembly 12100, so as to ensure that the main interface 12210 can be sealed and connected to the liquid distribution channel. The first positioning part 12510 and the second positioning part 12520 can play a positioning role when two adjacent supply and return liquid assemblies 12100 are assembled, so as to ensure that two adjacent liquid distribution holes 12110 are aligned and sealed and connected. The first positioning part 12510 and the second positioning part 12520 can play a positioning role when the supply and return liquid assembly 12100 is assembled with the second terminal module 12300, so as to ensure that the second terminal module 12300 can close the liquid distribution channel, thereby improving the reliability of the supply and return liquid module 12000.

[0133] One of the first positioning part 12510 and the second positioning part 12520 can be configured as a positioning groove, a positioning hole or other positioning structure, and the other of the first positioning part 12510 and the second positioning part 12520 can be configured as a positioning protrusion, a positioning post or other positioning structure.

[0134] like Figure 6 , Figure 8 and Figure 9As shown, the first positioning part 12510 is further configured as a positioning groove 12511. The second positioning part 12520 is configured as a positioning post 12521. The outer contour shape of the positioning post 12521 is adapted to the inner contour shape of the positioning groove 12511. One end of the liquid distribution through hole 12110 in the liquid supply and return assembly 12100 communicates with the positioning groove 12511, and the other end of the liquid distribution through hole 12110 extends to the end face of the positioning post 12521. In this way, the automatic alignment and anti-misalignment between modules are achieved through the cooperation of the positioning groove 12511 and the positioning post 12521, improving the assembly convenience and reliability of the liquid supply and return module 12000.

[0135] In this specific embodiment, the positioning groove 12511 has a circular cross-section perpendicular to its own axis.

[0136] like Figure 6 and Figure 8 As shown, optionally, the supply and return fluid module 12000 also includes a seal 12530. The seal 12530 is mounted on the inner wall of the positioning groove 12511 and is configured to seal the outer wall of the positioning post 12521 and the inner wall of the positioning groove 12511 when the positioning post 12521 is inserted into the positioning groove 12511. Thus, the positioning post 12521 can deform the seal 12530 when inserted into the positioning groove 12511, enhancing the sealing performance between adjacent modules and forming a reliable liquid seal. This ensures that liquid in the distribution channel does not leak from the connection between adjacent modules, improving the reliability of the supply and return fluid module 12000.

[0137] Among them, the sealing element 12530 can be configured as a sealing ring, sealing sleeve or other sealing structure.

[0138] Specifically, in this embodiment, the inner wall of the positioning groove 12511 is provided with an annular mounting groove 12512, and the sealing member 12530 is installed in the annular mounting groove 12512. In this way, the sealing member 12530 can be pre-installed in the annular mounting groove 12512 to ensure that when the positioning post 12521 is inserted into the positioning groove 12511, the sealing member 12530 is stably and reliably filled between the outer wall of the positioning post 12521 and the inner wall of the positioning groove 12511, thereby improving the reliability of the fluid supply and return module 12000.

[0139] In this specific embodiment, two adjacent modules are in surface contact to further improve the sealing performance between them.

[0140] In one embodiment, the first terminal module 12200 and / or the second terminal module 12300 are provided with drain ports. The drain ports communicate with the liquid distribution channel and are used to drain and vent the liquid distribution channel. The supply and return liquid module 12000 also includes a valve installed at the drain port and used to control the opening or closing of the drain port. Thus, the supply and return liquid module 12000 can drain or vent liquid through the drain ports according to actual usage needs, thereby improving the practicality of the supply and return liquid module 12000.

[0141] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0142] The above embodiments merely illustrate several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A multi-chip heat dissipating package apparatus of a composite substrate, characterized by, The invention includes a multi-chip heat dissipation packaging structure on a composite substrate, a multi-chip heat dissipation component disposed on the multi-chip heat dissipation packaging structure on the composite substrate, and a support component disposed on the multi-chip heat dissipation packaging structure on the composite substrate and surrounding the multi-chip heat dissipation packaging structure on the composite substrate. The multi-chip heat dissipation packaging structure of the composite substrate includes a multi-chip packaging substrate and at least one three-dimensional integrated memory chip and at least one logic chip of the composite substrate disposed on the multi-chip packaging substrate. The composite substrate includes a diamond layer, a diamond / silicon composite bonding layer, a silicon layer, and a circuit layer; wherein the thickness of the diamond layer ranges from 70% to 90% of the total thickness of the composite substrate chip.

2. The multi-chip heat dissipating package device of the composite substrate according to claim 1, wherein, The multi-chip heat dissipation component includes: A base, wherein the base is provided with a receiving groove, and the inner wall of the receiving groove is provided with a liquid outlet hole; The jetting section has a jetting cavity, and the first inner wall of the jetting section has a plurality of jetting holes, the first inner wall covering the opening of the receiving groove, and the second inner wall of the jetting section has a liquid inlet hole. The cooling section includes multiple needle ribs disposed on the bottom wall of the receiving groove.

3. The multi-chip heat dissipating package device of a composite substrate according to claim 2, wherein, The jet section includes a body and a cover plate. The body has a jet cavity, the bottom wall of which is the first inner wall. The cover plate covers the opening of the jet cavity, and the side wall of the cover plate near the body is the second inner wall.

4. The multi-chip heat spreader package of claim 3, wherein, The body includes a jetting element and a jetting plate. The jetting element has a through hole, and the jetting plate has multiple jetting holes. The jetting plate and the cover plate respectively cover the openings at both ends of the through hole.

5. The multi-chip heat dissipating package device of composite substrate according to claim 1, wherein, The three-dimensional integrated memory chip on the composite substrate includes: Composite substrate base material bare die; At least two composite substrate high-bandwidth memory modules, wherein the composite substrate high-bandwidth memory modules are interconnected with the composite substrate base die in a first direction; At least one vertical heat-conducting element is connected along a first direction to the packaging substrate, the composite substrate base die, and the composite substrate high-bandwidth memory, and conducts heat out of the composite substrate base die and the composite substrate high-bandwidth memory; Preferably, the composite substrate base die includes a first diamond layer, a first diamond / silicon composite bonding layer, a first silicon layer, and a first circuit layer; The thickness of the first diamond layer ranges from 70% to 98% of the total thickness of the composite substrate base die. More preferably, the first diamond layer extends along the outer side of the first silicon layer in a second direction and forms at least one first protrusion, wherein the first protrusion is thermally connected to the vertical heat conductor.

6. The multi-chip heat dissipating package device of composite substrate according to claim 5, wherein, The high-bandwidth memory of the composite substrate includes a second diamond layer, a second diamond / silicon composite bonding layer, a second silicon layer, and a second circuit layer. The thickness of the second diamond layer ranges from 70% to 98% of the total thickness of the high-bandwidth memory in the composite substrate.

7. The multi-chip heat dissipating package device of a composite substrate according to claim 6, wherein, The second diamond layer extends along the outer side of the second silicon layer in the second direction and forms at least one second protrusion, wherein the second protrusion is thermally connected to the vertical heat conductor.

8. The multi-chip heat dissipating package device of composite substrate according to claim 5, wherein, The vertical heat-conducting component is provided with at least two plate-shaped structures, which are sandwiched between the first protrusion and the second protrusion or between two second protrusions; Preferably, the plate-like structure includes trapezoidal or columnar plate-like structures formed from any one or more of diamond, diamond alloy, and copper.

9. The multi-chip heat dissipating package device of a composite substrate according to claim 7, wherein, The three-dimensional integrated memory chip on the composite substrate includes: At least one set of first heat-conducting grooves, with the first protrusion and the second protrusion equidistantly spaced in a first direction, are through slots for heat conduction; The vertical heat-conducting component is configured as a columnar structure that cooperates with the first heat-conducting groove and is sleeved inside the first heat-conducting groove, for conducting the heat of the first diamond layer and the second diamond layer to the vertical heat-conducting component. Preferably, the columnar structure includes a cone, column, or rod-shaped columnar structure formed from any one or more of diamond, diamond alloy, and copper.

10. A server cooling system, comprising: The server cooling system includes: The multi-chip heat dissipation packaging device of the composite substrate according to any one of claims 1 to 9 and the cooling circulation loop formed by the liquid supply and return module, the liquid return branch, the heat exchange module, the drive module and the liquid supply branch are connected in this way.

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