Manufacturing method of package substrate

Abstract

The present invention provides a method for manufacturing a package substrate, the method for manufacturing a package substrate according to an embodiment of the present invention comprising: a preparation step of preparing a spare substrate including a core layer in which a cavity portion is formed, the cavity portion including an element portion mounting space and a cavity inner surface surrounding the element portion mounting space; a surface treatment step of improving the surface energy of at least one part of the inner side surface of the cavity; an element part mounting step of mounting an element part on the cavity part after the surface treatment step; and an encapsulation layer formation step of forming an encapsulation layer surrounding at least a part of the surface of the element part using an encapsulation layer preparation composition. In this case, defects that may occur in the process of forming the encapsulation layer and the insulating layer in the package substrate can be effectively suppressed.

Description

Technical Field

[0001] The example relates to a method for manufacturing a packaging substrate. Background Technology

[0002] In the process of manufacturing electronic components, the process of incorporating circuitry into a semiconductor wafer is called the front-end process (FE), and the process of assembling the wafer into a state that can be used in an actual product is called the back-end process (BE). Furthermore, the packaging process is included in the subsequent processes.

[0003] Recently, the four core technologies driving the rapid development of the semiconductor industry in electronic products are semiconductor technology, semiconductor packaging technology, manufacturing process technology, and software technology. While semiconductor technology is evolving in various forms, including linewidths below the micrometer level (nanometer level), millions of cells, high-speed operation, and high heat generation, there is a lack of supporting technologies for complete packaging. Therefore, compared to the performance of the semiconductor technology itself, the electrical performance of semiconductors is more determined by packaging technology and corresponding electrical connections.

[0004] Ceramic or resin is suitable as the material for the packaging substrate. With ceramic substrates, it is difficult to mount high-performance, high-frequency semiconductor devices due to their high resistance or dielectric constant. With resin substrates, while high-performance, high-frequency semiconductor devices can be mounted, there are limitations in reducing the spacing between wiring traces.

[0005] Recently, research has been conducted on using silicon or glass as high-end packaging substrates. By forming through-holes in silicon or glass substrates and applying conductive materials to these through-holes, the wiring length between components and the motherboard can be shortened, and excellent electrical characteristics can be achieved.

[0006] Existing technical documents Patent documents Korean Patent No. 10-2021-0127188 Summary of the Invention The technical problem to be solved The purpose of this example is to provide a method for manufacturing a packaging substrate that can effectively suppress defects that occur during the formation of the packaging layer and insulating layer within the packaging substrate.

[0007] Technical solutions for solving the problem A method for manufacturing a packaging substrate according to an embodiment of this specification includes the following steps to manufacture the packaging substrate: a preparation step, preparing a spare substrate including a core layer having a cavity portion, the cavity portion including a component mounting space and an inner surface of the cavity surrounding the component mounting space; a surface treatment step, increasing the surface energy of at least a portion of the inner surface of the cavity; a component mounting step, mounting a component portion in the cavity portion after the surface treatment step; and a packaging layer forming step, forming a packaging layer surrounding at least a portion of the surface of the component portion using a packaging layer preparation composition.

[0008] The spare substrate may also include a cavity conductive layer formed on the inner side of the cavity.

[0009] The inner surface of the cavity may include exposed areas not covered by the cavity conductive layer.

[0010] The surface treatment step can increase the surface energy of the cavity conductive layer and the exposed area.

[0011] In the surface treatment step, at least a portion of the inner surface of the cavity may be subjected to plasma treatment.

[0012] In the surface treatment step, plasma treatment may be applied to the cavity conductive layer and the exposed area.

[0013] In the surface treatment step, the atmospheric gas may contain more than 50% by volume oxygen.

[0014] In the surface treatment step, the plasma power can be 50W or higher.

[0015] The surface treatment step can be performed for 15 to 60 seconds.

[0016] In the surface treatment step, plasma treatment can be performed in an atmosphere of 50 sccm to 1000 sccm.

[0017] In the surface treatment step, the contact angle of water with respect to the inner surface of the cavity can be adjusted to below 60°.

[0018] The component portion may include a side portion disposed spaced apart from the inner side portion of the cavity.

[0019] Arg, which is the aspect ratio of the gap in Equation 1 below, can be 30 or less.

[0020] Formula 1:

[0021] In Equation 1, eh is the height of the component portion, and g is the minimum distance between a first point located inside the side of the component portion and a second point located inside the cavity side.

[0022] The g value can be from 20 μm to 500 μm.

[0023] The viscosity of the composition for preparing the encapsulation layer at 25°C can be from 12,000 cps to 38,000 cps.

[0024] The composition for preparing the encapsulation layer may contain 45% by weight or more and 80% by weight of filler.

[0025] The difference between the coefficient of thermal expansion α1 of the encapsulation layer and the coefficient of thermal expansion of the core layer can be below 40 ppm / ℃.

[0026] The coefficient of thermal expansion α2 of the encapsulation layer can be below 140 ppm / ℃.

[0027] The elastic modulus of the encapsulation layer can be from 10 GPa to 30 GPa.

[0028] The glass transition temperature of the encapsulation layer can be from 70°C to 130°C.

[0029] The composition for preparing the encapsulation layer may include epoxy resin and a curing agent.

[0030] The composition for preparing the encapsulation layer may contain 45% by weight or more and 80% by weight of filler.

[0031] A method for manufacturing a packaged substrate according to another embodiment of this specification includes: a preparation step of preparing a spare substrate comprising a component portion and a core layer, wherein the component portion comprises a component and the core layer is a glass substrate on which the component portion is mounted; and a packaged layer forming step of forming a packaged layer surrounding at least a portion of the component portion using a packaged layer preparation composition to manufacture the packaged substrate.

[0032] The core layer includes a cavity portion, which is a space formed by a recess on the upper surface side of the core layer.

[0033] The component portion is disposed in the cavity portion.

[0034] The composition for preparing the encapsulation layer has a viscosity of 12,000 cps to 38,000 cps at 25°C.

[0035] The cavity portion may include: a cavity opening portion disposed on the upper surface side of the core layer; a cavity inner side surface connected to the cavity opening portion and extending in the thickness direction of the core layer; and a component mounting space surrounded by the cavity inner side surface.

[0036] At least one side of the component can be separated from the inner side of the cavity facing that side.

[0037] The encapsulation layer forming step may include: a configuration process, in which the encapsulation layer preparation composition is disposed between the inner side of the cavity and one side of the component portion; and a curing process, in which the encapsulation layer preparation composition is cured to form an encapsulation layer.

[0038] The cavity portion may include: a cavity opening portion disposed on the upper surface side of the core layer; a cavity inner side surface connected to the cavity opening portion and extending in the thickness direction of the core layer; and a component mounting space surrounded by the cavity inner side surface.

[0039] At least one side of the component can be separated from the inner side of the cavity facing that side.

[0040] In the spare substrate, Arg, which is the aspect ratio of the gap in Formula 1, can be 30 or less.

[0041] The g value can be from 20 μm to 500 μm.

[0042] The difference between the coefficient of thermal expansion α1 of the encapsulation layer and the coefficient of thermal expansion of the core layer can be below 40 ppm / ℃.

[0043] The coefficient of thermal expansion α2 of the encapsulation layer can be below 140 ppm / ℃.

[0044] The elastic modulus of the encapsulation layer can be from 10 GPa to 30 GPa.

[0045] The glass transition temperature of the encapsulation layer can be from 70°C to 130°C.

[0046] The composition for preparing the encapsulation layer may include epoxy resin and a curing agent.

[0047] The composition for preparing the encapsulation layer may contain 45% by weight or more and 80% by weight of filler.

[0048] Technical effect The manufacturing method of the example packaging substrate can effectively suppress the formation of defects during the formation of the packaging layer and insulating layer in the packaging substrate. Attached Figure Description

[0049] Figure 1 This is a cross-sectional view illustrating the preparation steps of a spare substrate prepared through an example embodiment.

[0050] Figure 2This is a cross-sectional view illustrating the component mounting steps of an embodiment of the example.

[0051] Figure 3 This is a cross-sectional view illustrating the encapsulation substrate prepared by the encapsulation layer formation steps of one embodiment of the example.

[0052] Figure 4 A cross-sectional view illustrating the preparation steps of a spare substrate prepared by way of another embodiment of the example.

[0053] Figure 5 This is a cross-sectional view illustrating the encapsulation substrate prepared by the encapsulation layer formation steps of another embodiment of the example.

[0054] Explanation of reference numerals in the attached figures 100: Spare substrate 110: Packaging substrate 10: Core layer 11: Cavity 12: Cavity opening 13: Inner surface of the cavity 14: Component installation space 20: Components Department 30: Adhesive film 40: Cavity conductive layer 50: Encapsulation layer Detailed Implementation Hereinafter, embodiments will be described in detail with reference to the accompanying drawings, enabling those skilled in the art to easily implement the invention. However, the invention is not limited to the embodiments described herein, but can be embodied in many different forms. Throughout this specification, similar parts are given the same reference numerals.

[0055] Throughout this specification, the term "combinations thereof" as used in Markush forms means a mixture or combination of more than one of the group of structural elements described in the Markush forms, and means including more than one of the group of said structural elements.

[0056] Throughout this specification, terms such as "first," "second," or "A," "B," etc., are used to distinguish between identical terms. Furthermore, singular expressions include plural expressions, provided there is no explicit difference in meaning within the context.

[0057] In this specification, “~” can mean that the compound contains a compound corresponding to “~” or a derivative of “~”.

[0058] In this specification, B being located at A means that B is located at A in direct contact with A or that B is located at A with other layers between them, and should not be construed as B being positioned in contact with the surface of A.

[0059] In this specification, "connected to B in A" means that A and B are directly connected or connected to each other through other structural elements. Unless otherwise specified, it should not be interpreted restrictively as A and B being directly connected.

[0060] In this specification, unless otherwise specified, the expression of singular should be interpreted to include the meaning of singular or plural as interpreted in the context.

[0061] In this specification, the shapes, relative sizes, angles, etc. of the structures in the accompanying drawings are illustrative and may be expressed in an exaggerated manner for the purpose of explanation. The scope of protection should not be limited to the interpretation of the accompanying drawings.

[0062] In this specification, "A and B are adjacent" means that A and B are placed in contact with each other, or that A and B are placed close to each other even though they are not in contact. Unless otherwise specified, the expression "A and B are adjacent" should not be interpreted restrictively as meaning that A and B are placed in contact with each other.

[0063] Unless otherwise specified, the physical properties of the structural elements within the package substrate in this specification should be interpreted as measured indoors at a temperature of 20°C to 25°C.

[0064] After a component is mounted in the cavity within the core layer, defects may occur during the encapsulation process. Specifically, voids may occur within the encapsulation layer surrounding the component, or undulations may occur in the insulating layer formed on the encapsulation layer. This phenomenon may occur more frequently when a conductive layer is present on the inner side of the cavity.

[0065] The inventors of the example completed the example by experimentally confirming, through the introduction of the technical features detailed below, a method for manufacturing a package substrate that can suppress defects in the encapsulation layer and the insulating layer and provide stable durability and electrical reliability.

[0066] The following provides a detailed explanation of the examples.

[0067] The method for manufacturing an example encapsulation substrate includes the following steps to manufacture the encapsulation substrate: a preparation step, preparing a spare substrate including a core layer having a cavity portion, the cavity portion including a component mounting space and an inner surface surrounding the component mounting space; a surface treatment step, increasing the surface energy of at least a portion of the inner surface of the cavity; a component mounting step, mounting a component portion in the cavity portion after the surface treatment step; and an encapsulation layer forming step, using an encapsulation layer preparation composition to form an encapsulation layer surrounding at least a portion of the surface of the component portion.

[0068] Figure 1 This is a cross-sectional view illustrating the preparation steps of a spare substrate through an example. Hereinafter, refer to... Figure 1 Examples will be provided.

[0069] Preparation steps The spare substrate 100 may include a core layer 10.

[0070] The core layer 10 can function as a support layer in a packaging substrate. The core layer 10 can be used without limitation wherever it is used as a support layer in the field of packaging substrates. For example, the core layer 10 can be used on glass substrates, ceramic substrates, organic substrates, etc.

[0071] In particular, the core layer 10 can be a glass substrate. When a glass substrate is used as the core layer 10, it is beneficial to display fine patterns and to stably suppress the occurrence of parasitic elements.

[0072] By way of example, alkaline borosilicate glass, alkali-free borosilicate glass, and alkali-free alkaline earth borosilicate glass can be used as glass substrates, and any type of glass suitable for use as electronic components can be used. Glass substrates for electronic devices can be used as glass substrates, and by way of example, those manufactured by Schott AG, AGC, Corning, etc., but are not limited to these.

[0073] The core layer 10 may include through holes (not shown) extending through the thickness direction of the core layer 10.

[0074] The through-hole consists of an internal space (not shown) and an inner diameter surface (not shown) surrounding the internal space. The internal space refers to the unused space, and the inner diameter surface refers to the surface of the core layer 10 formed inside the through-hole.

[0075] The via can have a diameter that varies along the thickness direction of the core layer 10. The via can also have a substantially uniform diameter along the thickness direction of the core layer 10.

[0076] The surface of the core layer 10 may include an upper surface and a side surface connected to the upper surface and formed in the thickness direction of the core layer 10. The surface of the core layer 10 may also include a lower surface facing the upper surface.

[0077] The side is formed in the thickness direction of the core layer 10, which means not only that the side is perpendicular to the upper surface of the core layer 10, but also that at least a portion of the side forms an angle (inclination) with the upper surface that is not 90 degrees.

[0078] The side surface can be a plane or a curved surface.

[0079] The thickness of the core layer 10 can be 100 μm or more. The thickness can be 200 μm or more. The thickness can be 300 μm or more. The thickness can be less than 3000 μm. The thickness can be less than 2000 μm. The thickness can be less than 1000 μm. In this case, the core layer 10 can have mechanical properties suitable for use with a packaging substrate.

[0080] A cavity portion 11 may be formed in the core layer 10, the cavity portion 11 including a component mounting space 14 and an inner cavity surface 13 surrounding the component mounting space 14.

[0081] The cavity portion 11 may be recessed from the upper surface side of the core layer 10. The cavity portion 11 may be recessed from a portion of the upper surface side of the core layer 10 in the thickness direction of the core layer 10. The cavity portion 11 may be formed through the core layer 10 in the thickness direction.

[0082] The cavity portion 11 may include a component mounting space 14 and an inner cavity surface 13 surrounding the component mounting space 14. The cavity portion 11 includes: a cavity opening 12 disposed on the upper surface side of the core layer 10; an inner cavity surface 13 connected to the cavity opening 12 and extending in the thickness direction of the core layer 10; and a component mounting space 14 surrounded by the inner cavity surface 13.

[0083] The cavity opening 12 can be configured to contact the upper surface of the core layer 10. The cavity opening 12 can form the inner edge of the upper surface of the core layer 10.

[0084] The inner surface 13 of the cavity extends in the thickness direction of the core layer 10, which not only means that the inner surface 13 of the cavity is perpendicular to the upper surface of the core layer 10, but also means that at least a portion of the inner surface 13 of the cavity forms an angle (inclination) with the upper surface that is not 90 degrees.

[0085] The inner surface 13 of the cavity can be a plane or a curved surface.

[0086] The spare substrate 100 may further include a cavity conductive layer 40 formed on the inner side surface 13 of the cavity. The cavity conductive layer 40 is a conductive layer disposed on the inner side surface 13 of the cavity and transmitting electrical signals within the package substrate. The cavity conductive layer 40 may be configured to contact the inner side surface 13 of the cavity, and other structural elements may be disposed between the cavity conductive layer 40 and the inner side surface 13 of the cavity.

[0087] The inner surface 13 of the cavity may include an exposed area that is not covered by the cavity conductive layer 40.

[0088] A redistribution layer (not shown) may be formed on the inner surface 13 of the cavity. The redistribution layer may include a cavity conductive layer 40 and an insulating layer (not shown) surrounding at least a portion of the cavity conductive layer 40.

[0089] In the preparation step, a core layer 10 with a cavity conductive layer 40 pre-formed on the inner surface 13 of the cavity can be prepared. The cavity conductive layer 40 can be formed on the inner surface 13 of the cavity during the preparation step.

[0090] Detailed descriptions of the conductive layer, insulating layer, and redistribution layer will be provided below, and therefore will be omitted here.

[0091] The component mounting space 14 is a space for mounting components. The component mounting space 14 can be an internal space formed by a recess on the upper surface side of the core layer 10.

[0092] The explanation of the component section will be detailed below, so it will be omitted here.

[0093] Surface treatment steps The example can increase the surface energy of at least a portion of the inner surface 13 of the cavity during the surface treatment step. The surface energy of the cavity conductive layer 40 and the exposed area can be increased during the surface treatment step. This effectively improves the affinity of the encapsulation layer preparation composition for the region where the encapsulation layer is formed, and effectively suppresses the occurrence of undulation in the insulating layer caused by defects in the encapsulation layer. In particular, the surface treatment step of the example can also help form a blank-suppressing encapsulation layer in the cavity portion 11 where the cavity conductive layer 40 is formed on the inner surface 13 of the cavity.

[0094] In the surface treatment step, at least a portion of the inner surface 13 of the cavity can be subjected to plasma treatment. In the surface treatment step, the exposed areas of the cavity conductive layer 40 and the inner surface 13 of the cavity can be subjected to plasma treatment together. Through plasma treatment, multiple hydrophilic functional groups can be formed on the surface of the cavity conductive layer 40, etc. Therefore, the hydrophilic encapsulation layer preparation composition can be easily filled in the space between the element portion mounted in the cavity portion 11 and the inner surface 13 of the cavity without leaving any gaps.

[0095] An atmospheric gas can be introduced during the surface treatment step. This atmospheric gas can act as a plasma-generating gas in the surface treatment process.

[0096] In the surface treatment step, the plasma power can be 50W or higher. The plasma power can be 100W or higher. The plasma power can be 150W or higher. The plasma power can be 200W or higher. The plasma power can be 500W or higher. The plasma power can be 1000W or higher. The plasma power can be 1500W or higher. The plasma power can be 2000W or higher. The plasma power can be 3000W or higher. The plasma power can be 4000W or higher. The plasma power can be 5000W or higher. The plasma power can be less than 10000W. In this case, excessive damage to the cavity conductive layer 40 can be suppressed, and the surface characteristics of the cavity inner surface 13, etc., can be effectively suppressed.

[0097] The surface treatment step can be performed for 15 to 60 seconds. The surface treatment step can be performed for 17 seconds or more. The surface treatment step can be performed for 50 seconds or less. The surface treatment step can be performed for 40 seconds or less. In this case, the cavity inner surface 13, etc., can be efficiently provided with sufficiently improved affinity for the composition used in preparing the encapsulation layer.

[0098] The atmosphere gas may contain more than 50% by volume of oxygen. The atmosphere gas may contain more than 60% by volume of oxygen. The atmosphere gas may contain more than 70% by volume of oxygen. The atmosphere gas may contain less than 100% by volume of oxygen. In this case, it can help to adjust the surface energy of the inner surface 13 of the cavity within a predetermined range in the example.

[0099] An example can be achieved by introducing an atmosphere gas with a regulated flow rate during the surface treatment step. This allows the inner surface 13 of the cavity to have a surface energy suitable for forming the encapsulation layer. At the same time, it prevents the adhesive film 30 used to fix the component part 20 from having excessive affinity for the encapsulation layer, thereby preventing excessive residue of adhesive material from the adhesive film 30 from remaining on the surface of the encapsulation layer.

[0100] Plasma treatment can be performed in an atmosphere of 50 sccm to 1000 sccm during the surface treatment step. Plasma treatment can also be performed in an atmosphere of 100 sccm or higher, 200 sccm or higher, 300 sccm or higher, 800 sccm or lower, or 600 sccm or lower. In these conditions, the encapsulation layer can be formed smoothly while the occurrence of defects in the insulating layer caused by the adhesive material can be stably suppressed.

[0101] In the surface treatment step, the contact angle of water relative to the inner surface 13 of the cavity can be adjusted to 60° or less. In the surface treatment step, the contact angle of water relative to the inner surface 13 of the cavity can be adjusted to 40° or less. In the surface treatment step, the contact angle of water relative to the inner surface 13 of the cavity can be adjusted to 30° or less. In the surface treatment step, the contact angle of water relative to the inner surface 13 of the cavity can be adjusted to 25° or less. In the surface treatment step, the contact angle of water relative to the inner surface 13 of the cavity can be adjusted to 20° or less. In the surface treatment step, the contact angle of water relative to the inner surface 13 of the cavity can be adjusted to 5° or more.

[0102] In the surface treatment step, the contact angle of water relative to the surface of the cavity conductive layer 40 can be adjusted to 60° or less. In the surface treatment step, the contact angle of water relative to the surface of the cavity conductive layer 40 can be adjusted to 40° or less. In the surface treatment step, the contact angle of water relative to the surface of the cavity conductive layer 40 can be adjusted to 30° or less. In the surface treatment step, the contact angle of water relative to the surface of the cavity conductive layer 40 can be adjusted to 25° or less. In the surface treatment step, the contact angle of water relative to the surface of the cavity conductive layer 40 can be adjusted to 20° or less. In the surface treatment step, the contact angle of water relative to the surface of the cavity conductive layer 40 can be adjusted to 5° or more.

[0103] In this case, the occurrence of defects caused by the surface energy difference between the composition for preparing the encapsulation layer and other structural elements disposed in the cavity can be effectively suppressed.

[0104] The contact angle is measured using a surface analyzer. Specifically, a water droplet is placed on the inner surface of the cavity or the surface of the cavity's conductive layer, and the contact angle is measured using a surface analyzer.

[0105] Component installation steps Figure 2This is a cross-sectional view illustrating the preparation of a spare substrate using the component assembly steps described in the example. Hereinafter, refer to... Figure 2 Examples will be provided.

[0106] The above-mentioned methods are directly applied to the core layer 10 and the cavity 11, etc. Figure 1 The content described above. The following explanation will focus on the parts where there are differences.

[0107] The manufacturing method of the encapsulation substrate in the example may further include a component mounting step, in which a component 20 is mounted in the cavity portion 11 after the surface treatment step has been completed. In the example, the component 20 can be fixed by means of an adhesive film 30 after the surface treatment step is completed. Therefore, it is possible to effectively prevent the adhesive film 30 from being hindered from peeling due to excessively high surface energy of the adhesive material contained in the adhesive film 30, or to prevent adhesive material residue on the surface of the encapsulation layer, during the surface treatment step.

[0108] The spare substrate 100 may also include a component section 20 disposed in the cavity section 11. The component section 20 may be disposed in the component section mounting space 14.

[0109] The component part 20 can be fixed in the cavity part 11 by means of the adhesive film 30.

[0110] The adhesive film 30 can be used without restriction as long as it is suitable for fixing components in the packaging field. For example, the adhesive film 30 can be a polyimide tape.

[0111] The component section 20 can be the component itself or a component package. The component package is formed by encapsulating one or more components using a component insulating material. The component insulating material can surround at least a portion of the component surface. The component insulating material can fix one or more components within the component package and can provide insulation in desired areas within the component package.

[0112] The components can be used not only with semiconductor components such as CPUs, GPUs, and memory chips, but also with capacitors, transistors, impedance components, and other modules. In other words, any semiconductor component mounted in a semiconductor device can be used as the aforementioned component without restriction.

[0113] The component insulating material may contain a substance that can suitably fix the component and prevent electrical short circuits. Example, the component insulating material may comprise one of the group consisting of epoxy resins, polyimide resins, polyurethane resins, polyester resins, acrylate resins, polyamide resins, and combinations thereof.

[0114] The component portion 20 may include a side surface. The side surface of the component portion 20 may be configured to be spaced apart from and facing a portion of the inner side surface of the cavity.

[0115] A spare substrate 100 with an Arg of 30 or less and a gap aspect ratio of Formula 1 can be prepared during the component assembly step.

[0116] Formula 1

[0117] In Equation 1, eh is the height of the element part 20, and g is the minimum distance between a first point located on the side of the element part 20 and a second point located on the cavity opening 12.

[0118] The shape of the empty space formed between the component portion 20 and the inner side surface 13 of the cavity can be adjusted by controlling the Arg value of the spare substrate 100. This allows for the easy distribution of a packaging layer preparation composition with a predetermined level of adhesion into the empty space, thereby effectively suppressing the formation of voids within the packaging layer.

[0119] The Arg value of the spare substrate 100 can be 30 or less. The Arg value can be 25 or less. The Arg value can be 20 or less. The Arg value can be 15 or less. The Arg value can be 10 or less. The Arg value can be 7 or less. The Arg value can be 0.1 or more. The Arg value can be 0.5 or more. The Arg value can be 1 or more. In this case, it can help the composition for preparing the encapsulation layer containing the filler to fully fill the empty space formed in the cavity portion 11.

[0120] The g value can be from 20 μm to 500 μm. The g value can be 50 μm or more. The g value can be 100 μm or more. The g value can be 400 μm or less. The g value can be 300 μm or less.

[0121] The eh value can be between 300 μm and 600 μm. The eh value can be above 350 μm. The eh value can be above 400 μm. The eh value can be below 550 μm.

[0122] In this case, the encapsulation layer preparation composition can be easily filled into the space formed between the inner side 13 of the cavity and the component portion 20. Furthermore, the shape and volume of the formed encapsulation layer can be controlled, thereby helping to suppress defects such as wrinkles that occur in the insulating layer formed in the encapsulation layer.

[0123] Encapsulation layer formation steps In the encapsulation layer forming step, an encapsulation layer surrounding at least a portion of the element portion 20 is formed using an encapsulation layer preparation composition. In the encapsulation layer forming step, the encapsulation layer can be formed by curing the encapsulation layer preparation composition.

[0124] The encapsulation layer forming step may include: a configuration process, in which an encapsulation layer preparation composition is disposed between the inner side 13 of the cavity and one side of the component portion 20; and a curing process, in which the encapsulation layer preparation composition is cured to form an encapsulation layer.

[0125] Configuration process The composition for preparing the encapsulation layer may contain epoxy resin and curing agent.

[0126] For example, epoxy resin can be used in the composition for preparing the encapsulation layer to impart controlled elasticity to the encapsulation layer. Thus, the encapsulation layer can adequately protect the component portion 20 and stably support the insulating layer formed on the encapsulation layer.

[0127] Epoxy resins may contain two or more epoxy groups. Epoxy resins may be selected from the group consisting of bisphenol A type epoxy resins, brominated bisphenol A type epoxy resins, bisphenol F type epoxy resins, biphenyl type epoxy resins, phenolic type epoxy resins, cyclic epoxy resins, naphthalene type epoxy resins, silicone epoxy copolymer resins, and combinations thereof.

[0128] The weight-average molecular weight of the epoxy resin can be below 1000 g / mol. Alternatively, it can be below 800 g / mol. Or below 600 g / mol. Or above 100 g / mol.

[0129] The curing agent used in this example is not limited to any compound that can function as a curing agent for epoxy resins. Examples include acid anhydride curing agents, aromatic amines, phenolic resins, imidazole compounds, etc.

[0130] In the examples, for every amount of epoxy groups in the epoxy resin, a curing agent of 0.3 equivalents or more can be used. In the examples, for every amount of epoxy groups in the epoxy resin, a curing agent of 0.5 equivalents or more can be used. In the examples, for every amount of epoxy groups in the epoxy resin, a curing agent of 0.7 equivalents or more can be used. In the examples, for every amount of epoxy groups in the epoxy resin, a curing agent of 2 equivalents or less can be used. In the examples, for every amount of epoxy groups in the epoxy resin, a curing agent of 1.5 equivalents or less can be used.

[0131] The composition for preparing the encapsulation layer may also contain fillers. Fillers can help the composition for preparing the encapsulation layer to have a viscosity within a predetermined range in the example, and can help the encapsulation layer to have physical properties suitable for the encapsulation substrate.

[0132] The filler may contain inorganic particles. For example, suitable fillers include silicon dioxide, titanium dioxide, and alumina.

[0133] The average particle size of the filler can be 150 nm or less. The average particle size can be 120 nm or less. The average particle size can be 100 nm or less. The average particle size can be 80 nm or less. The average particle size can be 10 nm or more. The average particle size can be 30 nm or more. In this case, it is helpful to make the composition for preparing the encapsulation layer have viscosity characteristics suitable for filling cavities, and to make the encapsulation layer have the desired mechanical properties. Furthermore, it is convenient to embody a conductive layer with fine spacing in the encapsulation layer.

[0134] The composition for preparing the encapsulation layer may contain 45% to 80% by weight of filler.

[0135] In this example, the filler content in the encapsulation layer preparation composition can be adjusted to a predetermined range as shown in the example. Therefore, the encapsulation layer preparation composition can have flow characteristics suitable for smoothly filling the space formed between the element portion 20 and the inner side surface 13 of the cavity, and the formed encapsulation layer can stably protect the element from external impacts and thermal shocks.

[0136] The encapsulation layer preparation composition may contain 45% by weight or more of filler. The encapsulation layer preparation composition may contain 50% by weight or more of filler. The encapsulation layer preparation composition may contain 80% by weight or less of filler. The encapsulation layer preparation composition may contain 75% by weight or less of filler. The encapsulation layer preparation composition may contain 70% by weight or less of filler. In this case, the composition may have flow characteristics suitable for filling the cavity 11 where the component portion 20 is mounted. Furthermore, the composition can stably fix the component portion 20 and the insulating layer formed in the encapsulation layer within the cavity 11, and can form an encapsulation layer that does not apply excessive stress to the core layer 10 during high-temperature atmosphere manufacturing processes.

[0137] The composition for preparing the encapsulation layer may contain a solvent. The solvent is not limited to any solvent commonly used in this art. Examples include aliphatic hydrocarbon solvents, aromatic hydrocarbon solvents, ethers, esters, etc.

[0138] The composition for preparing the encapsulation layer may also contain additives. Additives are not limited to those generally applicable in this art. Examples include defoamers, coupling agents, flame retardants, surfactants, etc.

[0139] During the preparation process, the encapsulation layer preparation composition can be melt-mixed to fill the area where the encapsulation layer is to be formed. The melt-mixed encapsulation layer preparation composition can be prepared using an injection molding device. The melt-mixed encapsulation layer preparation composition can also be prepared using a heated cylinder.

[0140] The example allows for temperature control of the heating cylinder within a pre-set range during configuration. This helps the composition for encapsulation layer preparation to have a melt viscosity suitable for filling narrow gaps, thereby suppressing the formation of voids within the encapsulation layer.

[0141] The temperature of the heating cylinder refers to the temperature measured at the tip of the heating cylinder.

[0142] During the configuration process, the temperature of the heating cylinder can be between 40°C and 70°C. The temperature can be above 45°C. The temperature can be above 50°C. The temperature can be below 65°C. The temperature can be below 60°C. In this case, the composition for preparing the encapsulation layer can fully fill the empty space within the cavity 11.

[0143] Examples can be applied to encapsulation layer preparation compositions whose viscosity is adjusted at 25°C. In these examples, the encapsulation layer preparation composition, having a viscosity controlled within a predetermined range, exhibits flow characteristics suitable for filling the complex-shaped empty spaces within the cavity 11 during the preparation process. Furthermore, the encapsulation layer formed by curing the composition can possess thermal expansion characteristics suitable for substrates with high hardness.

[0144] The viscosity of the encapsulation layer preparation composition at 25°C can be from 12,000 cps to 38,000 cps. The viscosity can be 15,000 cps or higher. The viscosity can be 18,000 cps or higher. The viscosity can be 20,000 cps or higher. The viscosity can be 35,000 cps or lower. The viscosity can be 32,000 cps or lower. The viscosity can be 30,000 cps or lower. The viscosity can be 28,000 cps or lower. In this case, the encapsulation layer preparation composition can be smoothly poured into the empty space within the cavity, thereby suppressing defects in the encapsulation layer.

[0145] After adjusting the temperature of the composition to 25°C, the viscosity of the composition for preparing the encapsulation layer at 25°C was measured using a viscometer.

[0146] Curing process Figure 3 This is a cross-sectional view illustrating a packaging substrate manufactured using an example packaging substrate manufacturing method. Hereinafter, reference will be made to... Figure 3 Examples will be provided.

[0147] The above-mentioned components are directly applicable to the core layer 10, the component section 20, and the cavity section 11. Figure 1 and Figure 2 The content described above. The following explanation will focus on the parts where there are differences.

[0148] During the curing process, the encapsulation layer preparation composition disposed in the encapsulation layer forming target area can be cured to form the encapsulation layer 50. The encapsulation layer preparation composition can be cured by heating to form the encapsulation layer 50.

[0149] During the curing process, the heat treatment temperature can be above 120°C. The heat treatment temperature can be above 130°C. The heat treatment temperature can be above 140°C. The heat treatment temperature can be below 250°C. The heat treatment temperature can be below 230°C. The heat treatment temperature can be below 200°C.

[0150] During the curing process, the heat treatment time can be 30 minutes or more. The heat treatment time can be 40 minutes or more. The heat treatment time can be 50 minutes or more. The heat treatment time can be less than 200 minutes. The heat treatment time can be less than 180 minutes. The heat treatment time can be less than 150 minutes.

[0151] In this case, it can help to carry out a stable curing reaction within the manufacturing process for preparing the encapsulation layer, so as to form an encapsulation layer 50 with excellent physical properties.

[0152] In the encapsulation substrate 110 manufactured by the encapsulation layer forming step, the encapsulation layer 50 can be formed in such a way that it surrounds at least a portion of the component portion 20. The encapsulation layer 50 can surround at least a portion of one side of the component portion 20. The encapsulation layer 50 can surround the entire side of the component portion 20. The encapsulation layer 50 can surround at least a portion of the upper surface of the component portion 20. The encapsulation layer 50 can surround the upper surface of the component portion 20. The encapsulation layer 50 can surround at least a portion of both the upper surface and the side of the component portion 20. The encapsulation layer 50 can surround at least a portion of the entire overall surface of the component portion 20.

[0153] At least a portion of the encapsulation layer 50 may be configured to contact the surface of the component portion 20. The encapsulation layer 50 may be configured to contact the surface of the component portion 20. The encapsulation layer 50 may also be configured to be spaced apart from the surface of the component portion 20.

[0154] An encapsulation layer 50 with unused space can be formed in the encapsulation substrate 110 of the example. As a result, the encapsulation layer 50 can stably support and fix the component part 20, and can stably suppress defects such as undulations in the redistribution layer when the redistribution layer is formed on the upper and / or lower part of the encapsulation layer 50.

[0155] The package substrate 110 manufactured in this example can control the difference between the thermal expansion characteristics of the package layer 50 and the core layer 10. Therefore, even if the substrate is repeatedly exposed to a high-temperature environment during the manufacturing process, defects such as cracks in the core layer 10 can be effectively suppressed.

[0156] The difference between the coefficient of thermal expansion α1 of the encapsulation layer 50 and the coefficient of thermal expansion of the core layer 10 can be less than 40 ppm / ℃. The difference can be less than 35 ppm / ℃. The difference can be less than 30 ppm / ℃. The difference can be greater than 5 ppm / ℃. In this case, during the formation of the insulating layer in the core layer 10, the intensity of thermal stress generated within the core layer 10 can be reduced to below a predetermined level.

[0157] The difference between the thermal expansion coefficient α1 of the encapsulation layer 50 and the thermal expansion coefficient of the core layer 10 is the absolute value of the value obtained by subtracting the thermal expansion coefficient of the core layer 10 from the thermal expansion coefficient α1 of the encapsulation layer 50.

[0158] The coefficient of thermal expansion α2 of the encapsulation layer 50 can be below 140 ppm / ℃. The α2 value can be below 135 ppm / ℃. The α2 value can be below 130 ppm / ℃. The α2 value can be below 125 ppm / ℃. The α2 value can be below 120 ppm / ℃. The α2 value can be below 115 ppm / ℃. The α2 value can be below 110 ppm / ℃. The α2 value can be above 100 ppm / ℃.

[0159] In this case, during the manufacturing process, when the packaging substrate 110 is exposed to a high-temperature environment, damage to the core layer 10 caused by the packaging layer 50 can be stably suppressed.

[0160] The coefficient of thermal expansion α1 is the coefficient of thermal expansion of the object being measured at room temperature or within the temperature range of the glass transition temperature of the object. The coefficient of thermal expansion α2 is the coefficient of thermal expansion of the object being measured within the temperature range above the glass transition temperature of the object.

[0161] The coefficient of thermal expansion can be measured using thermomechanical analysis and a thermomechanical analyzer (TMA). For example, the coefficient of thermal expansion can be measured using a TAINSTRUMENT Q400 model TMA.

[0162] In this example, the elasticity of the encapsulation layer 50 can be controlled within a predetermined range. In this case, the force exerted by the thermally expanded encapsulation layer 50 on the inner surface 13 of the cavity can be reduced in the high-temperature manufacturing environment.

[0163] The elastic modulus of the encapsulation layer 50 can be from 10 GPa to 30 GPa. The elastic modulus can be 11 GPa or higher. The elastic modulus can be 12 GPa or higher. The elastic modulus can be 25 GPa or lower. The elastic modulus can be 20 GPa or lower. The elastic modulus can be 15 GPa or lower. In this case, the stress applied to the inner surface 13 of the cavity at high temperatures can be reduced.

[0164] The elastic modulus of the encapsulation layer 50 can be measured using dynamic mechanical analysis (DMA).

[0165] The glass transition temperature of the encapsulation layer 50 can be between 70°C and 130°C. The glass transition temperature can be above 80°C. The glass transition temperature can be above 90°C. The glass transition temperature can be above 100°C. The glass transition temperature can be below 125°C. The glass transition temperature can be below 120°C. The glass transition temperature can be below 115°C. This helps the encapsulation layer 50 to have the flexibility suitable for the core layer 10 and can stably fix the component portion 20.

[0166] The glass transition temperature was measured using a differential scanning calorimeter (DSC). Specifically, after placing a sample in the DSC, a first scan was performed with a heating rate of 10°C / min. After quenching the sample, a second scan was performed under the same conditions as the first scan, and the glass transition temperature was measured.

[0167] For example, the glass transition temperature of the encapsulation layer can be applied to TA's Q2000 model.

[0168] After the encapsulation layer 50 is formed, the adhesive film 30 can be peeled off and removed.

[0169] Steps after the encapsulation layer formation step The manufacturing method of the package substrate in the example may include a rewiring layer formation step after the package layer formation step.

[0170] In the redistribution layer formation step, a redistribution layer may be formed on the core layer 10 and the package layer 50. In the redistribution layer formation step, a redistribution layer may be formed under the core layer 10 and the package layer 50.

[0171] The redistribution layer formation process may include the process of forming a conductive layer and the process of forming an insulating layer.

[0172] During the formation of the conductive layer, the conductive layer may be formed on the surface of the core layer 10 and / or the insulating layer. When forming the conductive layer on a mounted component, an insulating layer may first be formed on the upper surface of the component, and then the conductive layer may be formed on the insulating layer.

[0173] The conductive layer can be formed using either a dry or wet method.

[0174] The dry method involves sputtering the area where the conductive layer will be deposited to form a seed layer, and then plating the area with the seed layer to form the conductive layer. When forming the seed layer, metals such as titanium, chromium, and nickel can be sputtered, and these metals can also be sputtered together with copper. Sputtering creates an anchoring effect where the surface with the conductive layer interacts with the deposited metal particles, thereby improving the adhesion of the conductive layer.

[0175] The wet process involves applying a primer to the areas where a conductive layer needs to be formed, followed by metal plating. The primer may contain compounds with functional groups such as amines. Depending on the required adhesion strength, the primer may also contain compounds with functional groups such as amines and silane coupling agents. When using a silane coupling agent, the surface of the object to be primed can be pretreated with the silane coupling agent, and then the pretreated area can be coated with a compound containing amine groups to form a primer layer.

[0176] After forming a seed layer or primer layer, metal can be plated to form a conductive layer. While copper plating can be used when forming the conductive layer, it is not a limitation. Before metal plating, the portions of the seed layer or primer layer where a conductive layer is not required can be deactivated, or the portions where a conductive layer is required can be activated, followed by plating. Activation or deactivation methods can include light irradiation with a laser of a specific wavelength, chemical treatment, etc. However, metal plating can also be performed without activation or deactivation treatment, followed by etching the conductive layer according to a pre-designed shape to achieve patterning.

[0177] An insulating layer can be formed in the redistribution layer formation step in a manner that surrounds at least a portion of the conductive layer. The insulating layer can be formed in a manner that surrounds at least a portion of the upper surface of the conductive layer. The insulating layer can be formed in a manner that surrounds at least a portion of the side surfaces of the conductive layer.

[0178] The insulating layer and the conductive layer can be configured to be co-loaded on the core layer 10. The patterned conductive layer can be formed to be embedded within the insulating layer.

[0179] Any insulating layer that can be used for semiconductor components or packaging substrates can be used as an insulating layer. For example, an epoxy resin containing fillers can be used as an insulating layer. For example, the insulating layer can be formed using build-up materials such as Ajinomoto Build-up Film (ABF), primer materials, etc., but is not limited to these.

[0180] The insulating film can be formed by curing after laminating uncured or semi-cured insulating films.

[0181] In the redistribution layer formation step, a redistribution layer with a pre-designed structure can be formed on the upper and / or lower side of the core layer 10 to prepare the packaging substrate 110.

[0182] Other steps As needed, upper terminals, etc., may be formed on the upper part and / or side of the package substrate 110, and bumps may be formed on the lower part of the package substrate 110. The bumps may be arranged in a predetermined shape below the redistribution layer disposed below the core layer 10. Examplely, the bumps may be disposed on a portion of the lower surface of the package substrate 110 so as to contact the motherboard, etc.

[0183] Another embodiment of the method for manufacturing a packaging substrate Figure 4 A cross-sectional view illustrating the preparation steps of a spare substrate prepared by way of another embodiment of the example. Figure 5 This is a cross-sectional view illustrating the encapsulation substrate prepared through the encapsulation layer formation step of another embodiment of the example. Hereinafter, reference will be made to... Figure 4 and 5 Examples will be provided.

[0184] Another embodiment of the present specification describes a method for manufacturing a package substrate, comprising: a preparation step of preparing a spare substrate 100 including a component portion 20 and a core layer 10, wherein the component portion 20 includes components and the core layer 10 is a glass substrate on which the component portion 20 is mounted; and a package layer forming step of forming a package layer 50 surrounding at least a portion of the component portion 20 using a package layer preparation composition, thereby manufacturing a package substrate 110.

[0185] The core layer 10 includes a cavity 11 that is a space formed by a recess in the upper surface side.

[0186] The component portion 20 is disposed in the cavity portion 11.

[0187] The core layer 10 can be used as the core layer of the glass substrate described above. The component section 20, the spare substrate 100, the encapsulation layer preparation composition, and the encapsulation layer 50 can all be described as described above. The descriptions of the composition, properties, and structure of the core layer 10, component section 20, spare substrate 100, encapsulation layer preparation composition, and encapsulation layer 50 are redundant with those described above, and therefore, these descriptions are omitted.

[0188] The cavity portion 11 may include: a cavity opening portion 12 disposed on the upper surface side of the core layer 10; a cavity inner side portion 13 connected to the cavity opening portion 12 and extending in the thickness direction of the core layer 10; and a component mounting space 14 surrounded by the cavity inner side portion 13.

[0189] The space formed by the recess on the upper surface side of the core layer 10 means that it includes both the space formed by the recess in the thickness direction of the core layer 10 and the space that extends through the core layer 10 in the thickness direction.

[0190] The cavity portion 11 includes: a cavity opening portion 12 disposed on the upper surface side of the core layer 10; a cavity inner side portion 13 connected to the cavity opening portion 12 and extending in the thickness direction of the core layer 10; and a component mounting space 14 surrounded by the cavity inner side portion 13.

[0191] The cavity opening 12 can be configured to contact the upper surface of the core layer 10. The cavity opening 12 can form the inner edge of the upper surface of the core layer 10.

[0192] The inner surface 13 of the cavity extends in the thickness direction of the core layer 10, which not only means that the inner surface 13 of the cavity is perpendicular to the upper surface of the core layer 10, but also means that at least a portion of the inner surface 13 of the cavity forms an angle (inclination) with the upper surface that is not 90 degrees.

[0193] The inner surface 13 of the cavity can be a plane or a curved surface.

[0194] At least one side of the element portion 20 may be configured to be separated from the inner side 13 of the cavity facing the opposite side.

[0195] The encapsulation layer forming step may include: a configuration process, in which the encapsulation layer preparation composition is disposed between the inner side surface 13 of the cavity and one side surface of the element portion 20; and a curing process, in which the encapsulation layer preparation composition is cured to form the encapsulation layer 50.

[0196] The encapsulation layer formation steps can be applied to the encapsulation layer formation steps described above. The description of the encapsulation layer formation steps is redundant with the above description, therefore, it is omitted here.

[0197] At least one side of the element portion 20 may be configured to be separated from the inner side 13 of the cavity facing the opposite side.

[0198] In the spare substrate 100, the values ​​of Arg, eh, and g described in Formula 1 may have the numerical ranges described above. The explanation of the Arg, eh, and g values ​​of the spare substrate 100 is repeated above, and therefore the explanation therein is omitted.

[0199] The encapsulation layer 50 may have the physical properties of an encapsulation layer as described above. The description of the physical properties of the encapsulation layer 50 is redundant with the above description, and therefore will be omitted.

[0200] The encapsulation layer preparation composition may have the components described above. The description of the components of the encapsulation layer preparation composition is redundant with the above description, and therefore will not be repeated.

[0201] The examples are further described below through specific embodiments. These embodiments are merely examples to aid in understanding the concepts, and the scope of the examples is not limited thereto.

[0202] Manufacturing example: Formation of packaging substrate Example 1: A glass substrate with a thickness of 510 μm and a transverse diameter of 40 mm to 60 mm and a longitudinal diameter of 40 mm to 60 mm was prepared. A component with a height of 480 μm was placed in the cavity to prepare a spare substrate. The spacing between the inner surface of the cavity and the component was 150 μm, and polyimide tape was attached to the lower surface of the glass substrate to fix the component.

[0203] Namics' encapsulation layer preparation composition U8410-302SNS8AG was filled into the space formed between the component and the inner side of the cavity using injection molding equipment. The encapsulation layer preparation composition has a viscosity of 25000 cps at 25°C, and the temperature at the cylinder tip is suitable for filling at 40°C to 60°C.

[0204] After filling, the substrate is heat-treated at 150°C to 160°C for 1 to 2 hours to form an encapsulation layer, and the polyimide tape is peeled off to manufacture the encapsulation substrate.

[0205] Example 2: A spare substrate with the component fixed was prepared under the same conditions as in Example 1. Plasma treatment was performed on the surface of the spare substrate. A plasma power of 6000W was used, with 500 sccm of oxygen introduced as the atmosphere gas, and the plasma treatment lasted for 20 seconds.

[0206] After plasma treatment, an encapsulation layer is formed under the same conditions as in Experimental Example 1 to manufacture an encapsulation substrate.

[0207] Experimental Example 3: In addition to using a plasma power of 3000W, the packaging substrate was manufactured under the same conditions as in Experimental Example 2.

[0208] Experimental Example 4: Except for the application of 1000W plasma power, the packaging substrate was manufactured under the same conditions as in Experimental Example 2.

[0209] Experimental Example 5: Except for the application of 300W plasma power, the packaging substrate was manufactured under the same conditions as in Experimental Example 2.

[0210] Example 6: The packaging substrate was manufactured under the same conditions as in Example 5, except that the applicable atmospheric gas flow rate was 100 sccm.

[0211] Example 7: Plasma treatment was performed on the surface of the glass substrate used in Example 1. The plasma power was 6000W, oxygen was introduced at 500 sccm as the atmosphere gas, and the plasma treatment lasted for 20 seconds.

[0212] After plasma treatment, a component with a height of 480 μm is arranged in the cavity to prepare a spare substrate. The spacing between the inner side of the cavity and the component is 150 μm, and polyimide tape is attached to the lower surface of the glass substrate to fix the component.

[0213] After the components are fixed, an encapsulation layer is formed under the same conditions as in Experimental Example 1 to manufacture the encapsulation substrate.

[0214] Experimental Example 8: In addition to using a plasma power of 3000W, the packaging substrate was manufactured under the same conditions as in Experimental Example 7.

[0215] Experimental Example 9: Except for the application of 1000W plasma power, the packaging substrate was manufactured under the same conditions as in Experimental Example 7.

[0216] The process conditions for each experimental example are recorded in Table 1 below.

[0217] Evaluation example: Evaluating the contact angle of water relative to the surface of the glass substrate. During the manufacturing process of the packaging substrate in each experimental example, the contact angle of water relative to the inner surface of the cavity was measured using a surface analyzer before filling the cavity with the packaging layer preparation composition. Specifically, water droplets were dropped onto the inner surface of the cavity, and the contact angle was measured using a surface analyzer.

[0218] The measured values ​​for each experimental example are recorded in Table 2 below.

[0219] Evaluation example: Evaluate whether a gap is formed within the encapsulation layer. Optical microscopes and transmission electron microscopes (TEM) were used to observe whether blanks occurred within the encapsulation layer of the encapsulation substrates formed in Experimental Examples 2 to 9.

[0220] The case where no blanks are found within the encapsulation layer is rated as P, and the case where blanks are found is rated as F.

[0221] The evaluation results of each experimental case are recorded in Table 2 below.

[0222] Evaluation example: Ink leakage evaluation The lower surface of the encapsulation substrates in Examples 2 to 9 was observed using an optical microscope, and the extent to which the encapsulation layer preparation composition overflowed from the inner surface of the cavity was measured. Specifically, when observed from the lower surface of the encapsulation substrate, a first point was identified at the corner formed where the inner surface of the cavity meets the lower surface of the encapsulation substrate. A straight line was drawn from the first point in a direction perpendicular to the corner, and a second point was identified where the straight line meets the edge of the encapsulation layer formed on the lower surface of the encapsulation substrate. The distance between the first and second points was measured. The maximum value of the distance measurement was calculated and used as the ink leakage distance for the corresponding experimental example.

[0223] The measured values ​​for each experimental example are recorded in Table 2 below.

[0224] Evaluation example: Peelability evaluation of polyimide tape During the manufacturing process of the encapsulation substrates in Examples 4, 6 to 9, after the encapsulation layer was formed, the adhesive force between the encapsulation layer and the polyimide tape was measured using a Condor Sigma adhesive tester from XYZ TEC, according to the 180° peel test. The measurement speed (peel speed) was set to 10 mm / s, and the measurement distance (peel distance) was set to 70 mm.

[0225] The measured values ​​for each experimental example are recorded in Table 2 below.

[0226] Evaluation example: Evaluate whether there are residual adhesive substances. Optical microscopes and transmission electron microscopes (TEM) were used to observe the lower surface of the packaging substrates in Examples 4, 6 to 9, and to observe whether the adhesive material of the polyimide film remained on the lower surface of the packaging substrate. The case without adhesive material residue was rated as P, and the case with adhesive material residue was rated as F.

[0227] The measured values ​​for each experimental example are recorded in Table 2 below.

[0228] Table 1

[0229] Table 2

[0230] In the contact angle measurement results recorded in Table 2, the value of 100° or more was observed in Experiment 1 without plasma treatment, while the value of 30° or less was observed in Experiment 2 to Experiment 9 with plasma treatment.

[0231] In the evaluation of whether a blank was formed, no blank was found in Experimental Examples 2 to 9, which were applicable to plasma treatment.

[0232] In the ink leakage evaluation, in Experiment 7 to Experiment 9, where the component was fixed after plasma treatment, the leakage was less than 0.5 mm. However, in Experiment 2 to Experiment 6, where the component was fixed after plasma treatment, the leakage was greater than 6 mm in Experiment 2, Experiment 3, and Experiment 5.

[0233] In the evaluation of the peel strength of polyimide tapes, in Experiments 7 to 9, where components were fixed after plasma treatment, the peel strength was measured to be less than 150 gf / cm. 2 Furthermore, no adhesive residue was found, and in Experiments 4 and 6, which underwent plasma treatment after component fixation, the peel strength exhibited 400 gf / cm. 2 The values ​​above were found, and residues of adhesive material were also discovered.

[0234] Manufacturing example: Formation of packaging substrate Example 1: A glass substrate with a thickness of 510 μm and a transverse diameter of 40 mm to 60 mm and a longitudinal diameter of 40 mm to 60 mm was prepared. A component with a height of 480 μm was disposed within the cavity. A spacing of 150 μm was applied between the inner surface of the cavity and the component, and polyimide tape was attached to the lower surface of the glass substrate to fix the position of the component.

[0235] Subsequently, Namics' encapsulation layer preparation composition U8410-302SNS8AG was filled into the empty space formed between the component and the inner side of the cavity using injection molding equipment. During filling, the temperature at the cylinder tip was suitable to be between 40°C and 60°C.

[0236] After filling, the substrate is heat-treated at 150°C to 160°C for 1 to 2 hours to form the encapsulation layer.

[0237] After forming the encapsulation layer, a 20 μm thick build-up film ABF GL103 is laminated and cured on the glass substrate to form an insulating layer, thus preparing the encapsulation substrate.

[0238] Example 2: Except that Namics' U8410-207R6 product was used as the composition for preparing the encapsulation layer, an encapsulation substrate was prepared under the same conditions as in Example 1.

[0239] Example 3: Except that Namics' U8410-302 product was used as the composition for preparing the encapsulation layer, an encapsulation substrate was prepared under the same conditions as in Example 1.

[0240] Comparative Example 1: Except that Polytech's 8803LF (Rev.3) product was used as the composition for preparing the encapsulation layer, an encapsulation substrate was prepared under the same conditions as in Example 1.

[0241] Comparative Example 2: Except that Namics' U8437-2 product was used as the composition for preparing the encapsulation layer, an encapsulation substrate was prepared under the same conditions as in Example 1.

[0242] Comparative Example 3: Except that Namics' U8410-406 product was used as the composition for preparing the encapsulation layer, an encapsulation substrate was prepared under the same conditions as in Example 1.

[0243] Comparative Example 4: Except that Polytech's 8507FS product was used as the composition for preparing the encapsulation layer, an encapsulation substrate was prepared under the same conditions as in Example 1.

[0244] The process conditions for each embodiment and comparative example are described in Table 3 below.

[0245] Evaluation example: Physical property evaluation of the encapsulation layer The coefficients of thermal expansion of the encapsulation layer and glass substrate in each embodiment and comparative example were measured. Thermomechanical analysis was used, and the coefficients of thermal expansion were measured using a TA Instruments Q400 Thermomechanical Analyzer (TMA).

[0246] Subsequently, after separating a portion of the encapsulation layer from the encapsulation substrate of each embodiment and comparative example, the elastic modulus of the encapsulation layer was measured from the separated encapsulation layer. The elastic modulus was measured by dynamic mechanical analysis (DMA).

[0247] Furthermore, the glass transition temperature of the separated encapsulation layer was measured using a TA Q2000 differential scanning calorimeter (DSC).

[0248] The measurement values ​​of each embodiment and comparative example are recorded in Table 4 below.

[0249] Evaluation example: Evaluating whether cracks have occurred in the glass substrate. In the manufacturing process of the encapsulation substrate in each embodiment and comparative example, the encapsulation layer preparation composition was disposed and cured in the glass substrate to form an encapsulation layer, and then the glass substrate was observed using an optical microscope.

[0250] After the encapsulation layer was formed, a build-up film was stacked and cured on the glass substrate to form an insulating layer, and the glass substrate was observed using an optical microscope.

[0251] After the insulating layer was formed, the encapsulation substrate was placed at 120°C for 20 minutes to complete the final curing. Afterward, the glass substrate was observed using an optical microscope.

[0252] At this point, defects with a length of 100 μm or more within the glass substrate are classified as cracks. Cases without cracks are classified as P, and cases with cracks are classified as F.

[0253] The evaluation results of each embodiment and comparative example are recorded in Table 5 below.

[0254] Evaluation example: Moisture resistance evaluation After the packaging substrates of each embodiment and comparative example were placed in an atmosphere of 125°C for 24 hours, they were placed in an atmosphere of 30°C and 60%RH for 96 hours. Then, the presence of delamination between the packaging layer and the insulating layer was observed using an optical microscope. A case where no delamination occurred was rated as P, and a case where at least one of the packaging layer and the insulating layer delaminated was rated as F.

[0255] The evaluation results of each embodiment and comparative example are recorded in Table 5 below.

[0256] Evaluation example: Heat resistance evaluation After the temperature of the atmosphere containing the packaging substrates of the various embodiments and comparative examples was lowered to -40°C, the temperature of the atmosphere was raised to 165°C within 1 hour and maintained at 165°C for 2 hours. Then, the temperature of the atmosphere was lowered to -40°C within 1 hour. This process was performed as one thermal cycle for a total of 100 thermal cycles, and the glass substrates were observed using an optical microscope to determine whether cracks occurred and whether the packaging layer peeled off.

[0257] Then, a total of 400 thermal cycles were performed, and an optical microscope was used to observe whether cracks occurred in the glass substrate and whether the encapsulation layer peeled off.

[0258] Using an optical microscope, a case where no cracks occur in the glass substrate and no peeling occurs in the encapsulation layer and insulating layer is evaluated as P, and a case where cracks occur in the glass substrate or at least one of the encapsulation layer and insulating layer peels off is evaluated as F.

[0259] The evaluation results of each embodiment and comparative example are recorded in Table 5 below.

[0260] Evaluation Example: High Temperature Storage Life (HTSL) Evaluation After heating the packaging substrates of each embodiment and comparative example at 1500°C for 500 hours, the occurrence of cracks in the glass substrate and the delamination of the packaging layer and insulating layer were evaluated.

[0261] The case in which no cracks occur in the glass substrate and no delamination of the encapsulation layer and the insulating layer occurs is evaluated as P, and the case in which cracks occur in the glass substrate or delamination occurs in at least one of the encapsulation layer and the insulating layer is evaluated as F.

[0262] The evaluation results of each embodiment and comparative example are recorded in Table 5 below.

[0263] Table 3

[0264] Table 4

[0265] Table 5

[0266] In Table 5 above, Examples 1 to 3 were all rated P in the evaluation of whether cracks occurred, moisture resistance, heat resistance, and HTSL, while Comparative Example 1 was rated F in the evaluation of moisture resistance, heat resistance, and HTSL. These evaluation results demonstrate that by applying the encapsulation layer preparation composition of examples with controlled viscosity, etc., to the manufacturing method of the encapsulation substrate, and by adjusting the position of the component portion within the cavity according to the requirements of the example, it is helpful to improve the moisture resistance, heat resistance, and peel resistance of the encapsulation layer, and reduce the stress acting on the glass substrate.

[0267] While the preferred embodiments of the present invention have been described in detail above, the scope of protection of the present invention is not limited thereto. Various modifications and improvements made by those skilled in the art using the basic concepts of the present invention as defined in the appended claims are also within the scope of protection of the present invention.

Claims

1. A method of manufacturing a package substrate, characterized by, include: Preparation steps include preparing a spare substrate including a core layer with a cavity portion, wherein the cavity portion includes a component mounting space and an inner surface of the cavity surrounding the component mounting space; A surface treatment step to increase the surface energy of at least a portion of the inner side of the cavity; The component mounting step involves mounting the component in the cavity after the surface treatment step has been completed. as well as The encapsulation layer forming step involves using an encapsulation layer preparation composition to form an encapsulation layer that surrounds at least a portion of the surface of the component portion.

2. The method for manufacturing a packaging substrate according to claim 1, characterized in that, The spare substrate also includes a cavity conductive layer formed on the inner side of the cavity. The inner surface of the cavity includes an exposed area not covered by the cavity conductive layer. In the surface treatment step, the surface energy of the cavity conductive layer and the exposed area is increased.

3. The method for manufacturing a packaging substrate according to claim 1, characterized in that, In the surface treatment step, at least a portion of the inner surface of the cavity is subjected to plasma treatment.

4. The method for manufacturing a packaging substrate according to claim 3, characterized in that, In the surface treatment step, the atmosphere gas contains more than 50% by volume oxygen.

5. The method for manufacturing a packaging substrate according to claim 3, characterized in that, In the surface treatment step, the plasma power is 50W or higher.

6. The method for manufacturing a packaging substrate according to claim 3, characterized in that, The surface treatment step is performed for 15 to 60 seconds.

7. The method for manufacturing a packaging substrate according to claim 3, characterized in that, In the surface treatment step, plasma treatment is performed in an atmosphere of 50 sccm to 1000 sccm.

8. The method for manufacturing a packaging substrate according to claim 1, characterized in that, In the surface treatment step, the contact angle of water with respect to the inner surface of the cavity is adjusted to 60° or less.

9. The method for manufacturing a packaging substrate according to claim 1, characterized in that, The component includes a side portion disposed spaced apart from the inner side portion of the cavity. Arg, which is the aspect ratio of the gap in Equation 1 below, is 30 or less: Formula 1 In Equation 1, The height of the component portion is eh. The value of g is the minimum distance between a first point located inside the side of the element and a second point located inside the cavity.

10. The method for manufacturing a packaging substrate according to claim 9, characterized in that, The g value is between 20 μm and 500 μm.

11. The method for manufacturing a packaging substrate according to claim 1, characterized in that, The composition for preparing the encapsulation layer has a viscosity of 12,000 cps to 38,000 cps at 25°C.

12. The method for manufacturing a packaging substrate according to claim 1, characterized in that, The composition for preparing the encapsulation layer contains 45% by weight or more and 80% by weight or less of filler.

13. The method for manufacturing a packaging substrate according to claim 1, characterized in that, The difference between the coefficient of thermal expansion α1 of the encapsulation layer and the coefficient of thermal expansion of the core layer is less than 40 ppm / ℃.

14. The method for manufacturing a packaging substrate according to claim 1, characterized in that, The coefficient of thermal expansion α2 of the encapsulation layer is below 140 ppm / ℃.

15. The method for manufacturing a packaging substrate according to claim 1, characterized in that, The elastic modulus of the encapsulation layer is between 10 GPa and 30 GPa.

16. The method for manufacturing a packaging substrate according to claim 1, characterized in that, The glass transition temperature of the encapsulation layer is 70°C to 130°C.

17. The method for manufacturing a packaging substrate according to claim 1, characterized in that, The composition for preparing the encapsulation layer includes epoxy resin and a curing agent.

18. The method for manufacturing a packaging substrate according to claim 1, characterized in that, The composition for preparing the encapsulation layer contains 45% by weight or more and 80% by weight or less of filler.

19. A method of manufacturing a package substrate, characterized by, include: Preparation steps include preparing a spare substrate comprising a component section and a core layer. The component section includes components, and the core layer is a glass substrate on which the component section is mounted. The encapsulation layer forming step involves using an encapsulation layer preparation composition to form an encapsulation layer surrounding at least a portion of the component portion, thereby manufacturing an encapsulation substrate; The core layer includes a cavity portion, which is a space formed by a recess on the upper surface of the core layer. The component portion is disposed in the cavity portion. The composition for preparing the encapsulation layer has a viscosity of 12,000 cps to 38,000 cps at 25°C.

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