Electrode packaging structure and preparation method thereof, and semiconductor power device

Abstract

The invention provides an electrode packaging structure and a preparation method thereof, and a semiconductor power device, a dielectric protection layer of the electrode packaging structure is arranged on an electrode layer, the dielectric protection layer is provided with an opening structure, the opening structure exposes the electrode layer, and one side, deviating from the electrode layer, of the opening structure is provided with a first opening; the metal protection layer is arranged on the side, away from the electrode layer, of the dielectric protection layer, covers the joint of the side wall of the opening structure and the electrode layer and covers the first opening; the weldable layer is arranged on the side, away from the medium protection layer, of the metal protection layer, and the side, away from the metal protection layer, of the weldable layer is used for being welded with a welding structure; according to the invention, the metal protection layer is arranged on the electrode layer, and the metal protection layer covers the junction of the side wall of the opening structure and the electrode layer, so that solder and other corrosion particles on the weldable layer can be prevented from entering the electrode layer, the risk that the electrode layer is corroded can be reduced, and the performance of the electrode layer and the electrode packaging structure can be improved.

Description

Technical Field

[0001] This application belongs to the field of semiconductor device technology, and particularly relates to an electrode packaging structure and its preparation method, and a semiconductor power device. Background Technology

[0002] Semiconductor power devices are the core electronic components for power control in the field of power electronics. Their performance directly determines the energy utilization efficiency, operational stability, and service life of the entire equipment.

[0003] In current semiconductor power device electrode packaging structures, to achieve electrical connection between the electrode layer and external circuitry, openings are typically created in the dielectric protective layer covering the electrode layer surface, exposing part of the electrode layer. A solderable layer is then deposited in the exposed electrode layer and the opening area of ​​the dielectric protective layer. However, this method easily allows corrosion particles to enter and corrode the electrode layer. Summary of the Invention

[0004] The purpose of this application is to provide an electrode packaging structure and its fabrication method, as well as a semiconductor power device, which aims to solve the problem that the electrode layer is easily corroded in traditional technologies.

[0005] A first aspect of this application provides an electrode packaging structure, the electrode packaging structure comprising: Electrode layer; A dielectric protective layer is disposed on the electrode layer, and the dielectric protective layer has an opening structure that exposes the electrode layer. The opening structure has a first opening on the side opposite to the electrode layer. A metal protective layer is disposed on the side of the dielectric protective layer opposite to the electrode layer, the metal protective layer covering the junction of the sidewall of the opening structure and the electrode layer, and covering the first opening; A weldable layer is disposed on the side of the metal protective layer opposite to the dielectric protective layer, and the side of the weldable layer opposite to the metal protective layer is used for welding connection with the welded structure.

[0006] In some embodiments of this application, the metal protective layer has a first portion and a second portion that are interconnected. The first portion is disposed within the opening structure and forms conductive contact with the sidewall of the opening structure and the electrode layer exposed within the opening structure. The second portion is disposed outside the opening structure and covers the dielectric protective layer.

[0007] In some embodiments of this application, the length of the second portion along the direction away from the opening structure is less than the thickness of the dielectric protective layer.

[0008] In some embodiments of this application, the length 'a' of the second portion along the direction away from the opening structure and the thickness 'h' of the dielectric protective layer satisfy the following conditions: a≥k×h;k∈[0.5,0.625。

[0009] In some embodiments of this application, the first part and the second part are integrally formed structures.

[0010] In some embodiments of this application, the metal protective layer comprises a single-layer or multi-layer structure, and each layer of the single-layer or multi-layer structure is made of any one of Ti, Al, TiN, and Cu.

[0011] In some embodiments of this application, the opening structure has a second opening on the side near the electrode layer, and the opening size of the second opening is smaller than the opening size of the first opening.

[0012] In some embodiments of this application, the sidewalls of the opening structure are tapered from the first opening to the second opening.

[0013] In some embodiments of this application, the electrode packaging structure further includes a silicon carbide substrate layer, which is disposed on the side of the electrode layer opposite to the dielectric protective layer.

[0014] A second aspect of this application also provides a method for preparing an electrode encapsulation structure, the method comprising: Provide an electrode layer; A dielectric protective layer is provided on the electrode layer, and an opening structure is provided on the dielectric protective layer so that the opening structure exposes the electrode layer, and the opening structure has a first opening on the side opposite to the electrode layer; A metal protective layer is provided on the side of the dielectric protective layer opposite to the electrode layer. The metal protective layer covers the junction between the sidewall of the opening structure and the electrode layer, as well as the first opening. A solderable layer is provided on the side of the metal protective layer opposite to the dielectric protective layer, and the side of the solderable layer opposite to the metal protective layer is used for welding connection with the welding structure.

[0015] A third aspect of this application also provides a semiconductor power device, the semiconductor power device comprising the electrode packaging structure as described above or comprising the electrode packaging structure prepared by the preparation method described above.

[0016] The beneficial effects of the embodiments of the present invention compared with the prior art are as follows: In the above-mentioned electrode packaging structure and its preparation method, and semiconductor power device, the electrode packaging structure includes an electrode layer, a dielectric protective layer, a metal protective layer, and a solderable layer; the dielectric protective layer is disposed on the electrode layer, and an opening structure is provided on the dielectric protective layer, the opening structure exposing the electrode layer, and the side of the opening structure facing away from the electrode layer has a first opening; the metal protective layer is disposed on the side of the dielectric protective layer facing away from the electrode layer, the metal protective layer covers the junction of the sidewall of the opening structure and the electrode layer, and covers the first opening; the solderable layer is disposed on the side of the metal protective layer facing away from the dielectric protective layer, and the side of the solderable layer facing away from the metal protective layer is used for welding connection with the welding structure; the present application provides a metal protective layer on the electrode layer, and the metal protective layer covers the junction of the sidewall of the opening structure and the electrode layer, which can reduce the entry of solder and other corrosive particles on the solderable layer into the electrode layer, which is beneficial to reducing the risk of corrosion of the electrode layer, and thus beneficial to improving the performance of the electrode layer and the electrode packaging structure. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of the electrode packaging structure provided in one embodiment of this application; Figure 2 This is a schematic diagram of the electrode packaging structure provided in another embodiment of this application; Figure 3 This is a schematic diagram illustrating the steps of a method for preparing an electrode packaging structure according to an embodiment of this application.

[0018] Specific element symbol explanation: 100-Electrode layer, 200-Dielectric protection layer, 210-Opening structure, 211-First opening, 212-Second opening, 300-Metallic protection layer, 310-First part, 320-Second part, 400-Solderable layer, 500-Silicon carbide substrate layer. Detailed Implementation

[0019] To make the technical problems, technical solutions, and beneficial effects to be solved by this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and are not intended to limit the scope of this application.

[0020] It should be noted that when a component is referred to as being "set on" another component, it can be directly on or indirectly on that other component. When a component is referred to as being "connected to" another component, it can be directly connected to or indirectly connected to that other component.

[0021] It should be understood that the terms "length", "width", "upper", "lower", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0022] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0023] It's important to understand that semiconductor power devices are core electronic components for power control in the field of power electronics. With their high voltage withstand capability, high current capacity, and low loss characteristics, they are widely used in critical scenarios such as new energy vehicles (e.g., on-board inverters, charging piles), industrial automation (e.g., frequency converters, servo systems), rail transportation (e.g., traction converters), smart grids (e.g., reactive power compensation devices), and energy storage systems. Their performance directly determines the energy efficiency, operational stability, and lifespan of the entire system.

[0024] In current semiconductor power device electrode packaging structures, to achieve electrical connection between the electrode layer and external circuitry, openings are typically created in the dielectric protective layer covering the electrode layer surface, exposing part of the electrode layer. A solderable layer (such as a nickel-palladium-gold plating) is then deposited over the exposed electrode layer and the opening area of ​​the dielectric protective layer. However, in existing designs, the junction between the sidewall of the dielectric protective layer opening and the electrode layer lacks a dedicated protective structure, allowing the solderable layer to directly contact this junction. During device packaging (such as soldering) and subsequent use, solder and flux residues on the solderable layer surface, or corrosive particles from the external environment (such as moisture, chemical impurities, and residual plating solutions), can easily penetrate along the junction between the sidewall of the dielectric protective layer opening and the electrode layer, directly contacting the electrode layer (often made of aluminum, copper, or other metals) and causing corrosion. Once the electrode layer is corroded, its conductivity will decrease and its bonding force with the surrounding structure will decline. In severe cases, faults such as electrode delamination and open circuits may occur, which will lead to the failure of the electrical performance of semiconductor power devices, greatly shorten the service life of the devices, and make it difficult to meet the application requirements of high reliability and long life of semiconductor power devices in new energy, industrial and other fields.

[0025] Based on this, this application improves the related electrode packaging structure and its fabrication method, as well as the semiconductor power device.

[0026] Please see Figure 1, Figure 1 A schematic diagram of the electrode packaging structure provided in this embodiment is shown. The electrode packaging structure of this embodiment includes an electrode layer 100, a dielectric protective layer 200, a metal protective layer 300, and a solderable layer 400. The dielectric protective layer 200 is disposed on the electrode layer 100, and an opening structure 210 is provided on the dielectric protective layer 200, exposing the electrode layer 100. The side of the opening structure 210 facing away from the electrode layer 100 has a first opening 211. The metal protective layer 300 is disposed on the side of the dielectric protective layer 200 facing away from the electrode layer 100, and covers the junction between the sidewall of the opening structure 210 and the electrode layer 100, as well as the first opening 211. The solderable layer 400 is disposed on the side of the metal protective layer 300 facing away from the dielectric protective layer 200, and the side of the solderable layer 400 facing away from the metal protective layer 300 is used for welding connection with a welding structure.

[0027] It should be explained that the electrode layer 100 is the core conductive layer in a semiconductor device used for transmitting current and realizing electrical signal interaction. It is usually made of highly conductive metal materials and is the basis for establishing electrical connections between the device and external circuits. The dielectric protection layer 200 is an insulating protective layer covering the surface of the electrode layer 100. It is made of materials with excellent insulating properties, which can prevent the electrode layer 100 from short-circuiting with other structures, and at the same time block external impurities and corrosive media from contacting the electrode layer 100, forming physical and chemical protection for the electrode layer 100 and ensuring its long-term stable operation. The opening structure 210 is a hollow area formed on the dielectric protection layer 200 to expose the underlying electrode layer 100, providing a channel for the connection between the electrode layer 100 and the subsequent metal protective layer 300 and solderable layer 400, ensuring the effective transmission of electrical signals and power.

[0028] The metal protective layer 300 is a conductive protective layer disposed on the surface of the dielectric protective layer 200. It possesses good chemical stability and adhesion, covering the interface area between the dielectric protective layer 200 and the electrode layer 100, as well as the opening structure 210, filling structural gaps, preventing the intrusion of corrosive media, and providing a stable deposition substrate for the solderable layer 400. The solderable layer 400 is a welding adapter layer deposited on the surface of the metal protective layer 300. It is composed of a metallic material with excellent welding performance and can form a strong welding connection with external welding structures (such as solder, conductive connectors), ensuring reliable fixation and electrical conductivity between the semiconductor device and external circuits or packaging modules. The welding structure is an external component or material used to achieve a welding connection with the solderable layer 400, including solder, conductive clips, etc. Through welding processes, it combines with the solderable layer 400 to establish mechanical fixation and electrical connection between the semiconductor device and the external system.

[0029] It is understood that in this embodiment, the metal protective layer 300 completely covers the junction of the sidewall of the opening structure 210 and the electrode layer 100, as well as the first opening 211. This covers the gap between the electrode layer 100 and the dielectric protective layer 200, ensuring that the solderable layer 400 is deposited only on the surface of the metal protective layer 300 and does not directly contact the electrode layer 100 or the dielectric protective layer 200. This structurally blocks the intrusion path of corrosive media, preventing gap corrosion between the electrode layer 100 and the dielectric layer during electroless plating, and improving structural stability. Furthermore, the metal protective layer 300 forms a continuous protective barrier, preventing solder and corrosive materials from contacting the underlying electrode layer 100 through gaps during the packaging process, thus preventing corrosion or performance degradation of the electrode layer 100. Meanwhile, the metal protective layer 300 covers the surface of the opening structure 210 and the dielectric protective layer 200. During welding, the mechanical stress on the solder can be transferred to the dielectric protective layer 200 through the metal protective layer 300. The structural characteristics of the dielectric protective layer 200 buffer part of the stress, avoiding all the stress from acting directly on the electrode layer 100 below, reducing the damage to the electrode layer 100 caused by stress concentration, and extending the service life of the device.

[0030] Please refer to the embodiments described in this application. Figure 1 In this embodiment, the metal protective layer 300 has a first part 310 and a second part 320 that are connected to each other. The first part 310 is disposed inside the opening structure 210 and forms a conductive contact with the sidewall of the opening structure 210 and the electrode layer 100 exposed inside the opening structure 210. The second part 320 is disposed outside the opening structure 210 and covers the dielectric protective layer 200.

[0031] It is understood that in this embodiment, the first portion 310 completely fills the interior of the opening structure 210 and adheres to the opening sidewall and electrode layer 100; the second portion 320 forms a continuous whole with the first portion 310, covering the dielectric protection layer 200 outside the opening, constructing a complete protective barrier from the inside to the outside of the opening, which helps to block the path of corrosive medium to the junction of the electrode layer 100 and the dielectric layer, avoiding crevice corrosion. Furthermore, the first portion 310 forms a tight conductive contact with the exposed electrode layer 100, and the metal protective layer 300 as a whole acts as a conductive transition layer, reducing the contact resistance between the electrode layer 100 and the solderable layer 400. Simultaneously, the second portion 320 covers the dielectric protection layer 200 outside the opening, significantly increasing the deposition area of ​​the solderable layer 400. The solderable layer 400 can be deposited simultaneously in the first portion 310 inside the opening and the second portion 320 outside the opening, increasing the contact area with the welded structure. This not only improves the mechanical strength of the welded connection but also reduces the precision requirements of the opening area during welding, adapting to welding processes in different packaging scenarios and reducing defects such as welding misalignment and incomplete soldering.

[0032] Please refer to the embodiments described in this application. Figure 1 In this embodiment, the length of the second part 320 along the direction away from the opening structure 210 is less than the thickness of the dielectric protective layer 200.

[0033] It is understood that by limiting the extension length of the second portion 320 (less than the thickness of the dielectric protective layer 200), this embodiment of the application avoids the second portion 320 from excessively occupying the surface space of the dielectric protective layer 200, thereby reducing the horizontal dimensions of the electrode packaging structure. Furthermore, the shorter extension length of the second portion 320 results in a more concentrated contact area with the dielectric protective layer 200, reducing stress accumulation at the edges. Simultaneously, the adhesion between the metal protective layer 300 and the dielectric protective layer 200 is more easily maintained, preventing defects such as detachment or cracking of the metal protective layer 300 due to stress, thus improving the overall reliability of the structure. At the same time, the length of the second portion 320 being less than the thickness of the dielectric protective layer 200 provides sufficient deposition area for the solderable layer 400 to meet welding requirements, while also providing limited protection for the dielectric protective layer 200 around the opening structure 210 through limited extension, avoiding excessive use of metal materials and reducing production costs.

[0034] Please refer to the embodiments described in this application. Figure 1 In this embodiment, the length a of the second part 320 along the direction away from the opening structure 210 and the thickness h of the dielectric protective layer 200 satisfy the following conditions: a≥k×h; k∈[0.5,0.625].

[0035] In some embodiments, the thickness h of the dielectric protective layer 200 is 8-10 μm, and the length a of the second portion 320 is 5 μm.

[0036] In some embodiments of this application, please continue to refer to 1. The first part 310 and the second part 320 of this embodiment are integrally formed structures.

[0037] In some embodiments, the first portion 310 and the second portion 320 are prepared by deposition or electroplating.

[0038] In some embodiments of this application, the metal protective layer 300 includes a single-layer or multi-layer structure, and each layer of the single-layer or multi-layer structure is made of any one of Ti, Al, TiN, and Cu.

[0039] It is understandable that the metal protective layer 300 can be a Ti / Al, Ti / TiN / Al, Al, or Ti / Cu layer. Ti / Al, Ti / TiN / Al, and Al are prepared by PVD sputtering. Ti / Cu can be prepared by PVD sputtering, or a thicker copper layer can be obtained by electroplating copper after sputtering a Ti / Cu seed layer.

[0040] In some embodiments, in the metal protective layer 300, the thickness of the Ti layer is 1000-3000 Å, the thickness of the Al layer is 10000 Å-20000 Å, and the thickness of the Cu layer is 10000 Å-20000 Å.

[0041] In some embodiments, the solderable layer 400 is a nickel-palladium-gold plating layer.

[0042] In some embodiments, the electrode layer 100 is an Al layer.

[0043] In some embodiments, the dielectric protective layer 200 is a PI (polyimide) layer or a passivation layer.

[0044] Please refer to the embodiments described in this application. Figure 1 In this embodiment, the opening structure 210 has a second opening 212 on the side near the electrode layer 100, and the opening size of the second opening 212 is smaller than the opening size of the first opening 211.

[0045] It is understood that the opening structure 210 in this embodiment can form an opening shape that is wider at the top and narrower at the bottom. This allows the metal protective layer 300 to gradually spread from the second opening 212 (narrow opening) to the first opening 211 (wide opening) when filling the opening. The metal material is more likely to form a tight fit with the sidewall of the second opening 212 and the electrode layer 100, reducing the filling blind area caused by the uniform size of the opening, completely eliminating gaps inside the opening, and preventing the intrusion of plating solution and encapsulation material. Furthermore, the opening structure 210, which is wider at the top and narrower at the bottom, can also form a supporting step at the transition between the first opening 211 and the second opening 212. After the metal protective layer 300 is deposited, this step can mechanically limit the metal protective layer 300, preventing the metal protective layer 300 from shifting or falling off due to thermal expansion and contraction, external vibration, or other factors.

[0046] Please refer to the embodiments described in this application. Figure 1 In this embodiment, the sidewalls of the opening structure 210 are tapered from the first opening 211 to the second opening 212.

[0047] Understandably, traditional vertical sidewall openings tend to create deposition blind spots at the junction of the sidewall and electrode layer 100, resulting in incomplete coverage by the metal protective layer 300 and leaving gaps. In this design, the tapered sidewall causes the opening to gradually narrow from top to bottom, allowing the metal protective layer 300 to smoothly extend along the inclined sidewall to the second opening 212, forming a seamless fit with the opening sidewall and the exposed electrode layer 100. Furthermore, the inclined sidewall also provides support for the welding structure and subsequent structures.

[0048] In some embodiments of this application, please refer to Figure 2 , Figure 2The diagram shows a schematic of the electrode packaging structure provided in this embodiment. The electrode packaging structure in this embodiment also includes a silicon carbide substrate layer 500, which is disposed on the side of the electrode layer 100 away from the dielectric protective layer 200.

[0049] Furthermore, to better implement the electrode packaging structure in any of the above embodiments, please refer to the following based on the above electrode packaging structure. Figure 3 , Figure 3 This embodiment illustrates a step-by-step diagram of the electrode encapsulation structure fabrication method provided. This application also provides a method for fabricating an electrode encapsulation structure, the method comprising: S100: Provides an electrode layer 100; S200: A dielectric protective layer 200 is provided on the electrode layer 100, and an opening structure 210 is provided on the dielectric protective layer 200 so that the opening structure 210 exposes the electrode layer 100, and the side of the opening structure 210 facing away from the electrode layer 100 has a first opening 211. S300: A metal protective layer 300 is provided on the side of the dielectric protective layer 200 away from the electrode layer 100. The metal protective layer 300 covers the junction of the side wall of the opening structure 210 and the electrode layer 100, as well as the first opening 211. S400: A weldable layer 400 is provided on the side of the metal protective layer 300 away from the medium protective layer 200. The side of the weldable layer 400 away from the metal protective layer 300 is used for welding connection with the welded structure.

[0050] It is understood that in the electrode packaging structure obtained by the preparation method in this application embodiment, the metal protective layer 300 completely covers the junction of the sidewall of the opening structure 210 and the electrode layer 100 and the first opening 211, that is, it covers the gap between the electrode layer 100 and the dielectric protective layer 200, so that the solderable layer 400 is deposited only on the surface of the metal protective layer 300 and does not directly contact the electrode layer 100 and the dielectric protective layer 200. This structurally blocks the intrusion path of the corrosive medium, avoids the gap corrosion between the electrode layer 100 and the dielectric layer during the electroless plating process, and improves the structural stability.

[0051] Furthermore, in order to better implement the electrode packaging structure and its preparation method in any of the above embodiments, based on the above electrode packaging structure and its preparation method, this application embodiment also provides a semiconductor power device, which includes the electrode packaging structure as described above or includes the electrode packaging structure prepared by the above preparation method.

[0052] In some embodiments, the semiconductor power device is a SiC MOS device.

[0053] In the above embodiments, the descriptions of each embodiment have different focuses. For parts that are not described in detail or recorded in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0054] The basic concepts have been described above. Obviously, for those skilled in the art, the detailed disclosure above is merely illustrative and does not constitute a limitation of this application. Although not explicitly stated herein, those skilled in the art may make various modifications, improvements, and corrections to this application. Such modifications, improvements, and corrections are suggested in this application, and therefore remain within the spirit and scope of the exemplary embodiments of this application.

[0055] Furthermore, this application uses specific terms to describe embodiments of the application. For example, "an embodiment," "one embodiment," and / or "some embodiments" refer to a particular feature, structure, or characteristic associated with at least one embodiment of the application. Therefore, it should be emphasized and noted that "an embodiment," "one embodiment," or "an alternative embodiment" mentioned twice or more in different locations in this specification do not necessarily refer to the same embodiment. In addition, certain features, structures, or characteristics in one or more embodiments of the application can be appropriately combined.

[0056] Similarly, it should be noted that, in order to simplify the description of the present application and thus aid in the understanding of one or more embodiments of the invention, the foregoing description of the embodiments of the present application sometimes combines multiple features into a single embodiment, drawing, or description thereof. However, this disclosure method does not imply that the subject matter of the application requires more features than those mentioned in the claims. In fact, the embodiments contain fewer features than all the features of the single embodiments disclosed above.

[0057] The above-described embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application, and should all be included within the protection scope of this application.

Claims

1. An electrode packaging structure, characterized in that, The electrode packaging structure includes: Electrode layer; A dielectric protective layer is disposed on the electrode layer, and the dielectric protective layer has an opening structure that exposes the electrode layer. The opening structure has a first opening on the side opposite to the electrode layer. A metal protective layer is disposed on the side of the dielectric protective layer opposite to the electrode layer, the metal protective layer covering the junction of the sidewall of the opening structure and the electrode layer, and covering the first opening; A weldable layer is disposed on the side of the metal protective layer opposite to the dielectric protective layer, and the side of the weldable layer opposite to the metal protective layer is used for welding connection with the welded structure.

2. The electrode packaging structure according to claim 1, characterized in that, The metal protective layer has a first part and a second part that are connected to each other. The first part is disposed inside the opening structure and forms a conductive contact with the sidewall of the opening structure and the electrode layer exposed inside the opening structure. The second part is disposed outside the opening structure and covers the dielectric protective layer.

3. The electrode packaging structure according to claim 2, characterized in that, The length of the second portion along the direction away from the opening structure is less than the thickness of the dielectric protective layer.

4. The electrode packaging structure according to claim 3, characterized in that, The length 'a' of the second portion along the direction away from the opening structure and the thickness 'h' of the dielectric protective layer satisfy the following conditions: a≥k×h;k∈[0.5,0.625。 5. The electrode packaging structure according to claim 2, characterized in that, The first part and the second part are integrally formed structures.

6. The electrode packaging structure according to any one of claims 1 to 5, characterized in that, The metal protective layer may be a single-layer or multi-layer structure, and each layer of the single-layer or multi-layer structure may be made of any one of Ti, Al, TiN, and Cu.

7. The electrode packaging structure according to claim 1, characterized in that, The opening structure has a second opening on the side near the electrode layer, and the opening size of the second opening is smaller than the opening size of the first opening; The electrode packaging structure further includes a silicon carbide substrate layer, which is disposed on the side of the electrode layer opposite to the dielectric protective layer.

8. The electrode packaging structure according to claim 7, characterized in that, From the first opening to the second opening, the sidewalls of the opening structure are tapered.

9. A method for preparing an electrode encapsulation structure, characterized in that, The preparation method includes: Provide an electrode layer; A dielectric protective layer is provided on the electrode layer, and an opening structure is provided on the dielectric protective layer so that the opening structure exposes the electrode layer, and the opening structure has a first opening on the side opposite to the electrode layer; A metal protective layer is provided on the side of the dielectric protective layer opposite to the electrode layer. The metal protective layer covers the junction between the sidewall of the opening structure and the electrode layer, as well as the first opening. A solderable layer is provided on the side of the metal protective layer opposite to the dielectric protective layer, and the side of the solderable layer opposite to the metal protective layer is used for welding connection with the welding structure.

10. A semiconductor power device, characterized in that, The semiconductor power device includes the electrode packaging structure as described in any one of claims 1 to 8 or includes the electrode packaging structure prepared by the preparation method described in claim 9.

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