Atomization driving circuit and atomization device

Abstract

The invention provides an atomization driving circuit and an atomization device.The atomization driving circuit comprises a power module, a controller, an atomization circuit and a temperature sensing circuit, the atomization circuit comprises a power tube, and when the atomization device is normally started or mistakenly triggered, the controller outputs a corresponding atomization control signal; the power tube converts working voltage output by the power module into driving voltage to drive the heating body to heat according to atomization control signals output by the controller, the heating body atomizes the aerosol generating matrix to generate aerosol, when the temperature of the atomization device is too high, the temperature sensing circuit outputs turn-off voltage smaller than threshold voltage to the power tube, the power tube is turned off, and the power tube is turned off. When the atomization device works, the atomization circuit stops power output, the heating body stops atomization work, the temperature of the heating body stops rising, and therefore over-temperature protection work of the atomization device is achieved.

Description

Technical Field

[0001] This invention belongs to the field of atomization technology, and particularly relates to an atomization driving circuit and an atomization device. Background Technology

[0002] Atomizing devices can atomize an aerosol generating matrix into aerosols for users to inhale. They have advantages such as safety, convenience, health, and environmental friendliness, and are therefore receiving increasing attention and favor.

[0003] Current atomizing devices all have a suction start function. The suction start function mostly uses an airflow sensor to sense changes in suction negative pressure to identify the suction action. The internal atomization drive circuit controls the power output based on the detection signal output by the airflow sensor, and controls the heating element to heat up and atomize the aerosol generation matrix to generate aerosol.

[0004] Furthermore, the atomizing device can be interactively triggered via interactive components, such as controlling the atomizing drive circuit to output power by outputting a trigger signal through a button.

[0005] However, during long-term transportation or use, the airflow sensor may self-start due to environmental factors such as static electricity and air pressure changes, and output corresponding detection signals. Alternatively, button jamming or squeezing may cause accidental button triggering, leading to the atomization drive circuit outputting the drive voltage incorrectly, causing the heating element to heat up and the atomization device to self-start. If frequent self-starting occurs, causing the heating element to continuously heat up, it may result in the atomization device melting, burns to the user, or even a fire. Summary of the Invention

[0006] The purpose of this invention is to provide an atomization drive circuit that solves the problem of traditional atomization devices that suffer from overheating and damage due to false triggering leading to self-starting heating.

[0007] A first aspect of this invention provides an atomization driving circuit disposed within an atomization device, wherein the atomization driving circuit is also connected to a heating element of the atomization device.

[0008] The atomization driving circuit includes: The power module is used to output the operating voltage; The controller, connected to the power module, is used to output an atomization control signal according to the trigger signal; An atomizing circuit is connected in series with the heating element between the power supply terminal and the ground terminal of the power module. The atomizing circuit is also connected to the controller. The atomizing circuit includes at least a power transistor. The power transistor of the atomizing circuit converts the operating voltage into a driving voltage according to the atomizing control signal and outputs it to the heating element to drive the heating element to heat up and atomize the aerosol to generate a matrix. A temperature sensing circuit is disposed within the atomizing device and connected to the power transistor. The temperature sensing circuit is used to output a shutdown voltage to the power transistor when the temperature of the atomizing device exceeds a temperature threshold, so as to control the power transistor to shut down the output. The absolute value of the shutdown voltage is less than the absolute value of the threshold voltage of the power transistor.

[0009] Optionally, the atomizing circuit includes a first resistor and a first power transistor; The first end of the first resistor is connected to the controller, and the second end of the first resistor is connected to the control terminal of the first power transistor. The input terminal of the first power transistor is connected to the power supply terminal of the power module, and the output terminal of the first power transistor is connected to the first end of the heating element, and the second end of the heating element is grounded; or, the input terminal of the first power transistor is connected to the second end of the heating element, the output terminal of the first power transistor is grounded, and the first end of the heating element is connected to the power supply terminal of the power module.

[0010] Optionally, the first power transistor is a P-channel field-effect transistor, the source of the P-channel field-effect transistor is connected to the power supply terminal of the power module, the drain of the P-channel field-effect transistor is connected to the first terminal of the heating element, and the gate of the P-channel field-effect transistor is connected to the second terminal of the first resistor. The temperature sensing circuit includes a thermistor, the first end of which is connected to the gate of the P-channel field-effect transistor, and the second end of which is connected to the source of the P-channel field-effect transistor. The thermistor is a negative temperature coefficient thermistor.

[0011] Optionally, the first power transistor is an N-channel field-effect transistor, the drain of the N-channel field-effect transistor is connected to the second terminal of the heating element, the source of the N-channel field-effect transistor is grounded, and the gate of the N-channel field-effect transistor is connected to the second terminal of the first resistor. The temperature sensing circuit includes a thermistor, the first end of which is connected to the gate of the N-channel field-effect transistor, and the second end of which is grounded. The thermistor is a negative temperature coefficient thermistor.

[0012] Optionally, the thermistor includes multiple thermistors, which are connected in series or in parallel, and are respectively disposed at different positions in the atomizing device.

[0013] Optionally, the atomizing circuit includes a second resistor and a second power transistor; The first end of the second resistor and the control end of the second power transistor are connected to form the control end of the atomizing circuit. The input end of the second power transistor, the second end of the second resistor, and the power supply end of the power module are connected. The output end of the second power transistor is connected to the first end of the heating element, and the second end of the heating element is grounded. The second power transistor is a P-channel field-effect transistor, and the source, drain, and gate of the P-channel field-effect transistor constitute the input terminal, output terminal, and control terminal of the second power transistor, respectively. The temperature sensing circuit includes a thermistor, the first end of which is connected to the controller, and the second end of which is connected to the control terminal of the second power transistor. The thermistor is a positive temperature coefficient thermistor.

[0014] Optionally, the atomizing circuit includes a second resistor and a second power transistor; The first end of the second resistor and the control end of the second power transistor are connected to form the control end of the atomizing circuit. The input end of the second power transistor is connected to the second end of the heating element. The first end of the heating element is connected to the power supply end of the power module. The output end of the second power transistor and the second end of the second resistor are grounded. The second power transistor is an N-channel field-effect transistor, and the drain, source, and gate of the N-channel field-effect transistor constitute the input terminal, output terminal, and control terminal of the second power transistor, respectively. The temperature sensing circuit includes a thermistor, the first end of which is connected to the controller, and the second end of which is connected to the control terminal of the second power transistor. The thermistor is a positive temperature coefficient thermistor.

[0015] Optionally, the thermistor includes multiple thermistors, which are connected in series or in parallel, and are respectively disposed at different positions in the atomizing device.

[0016] Optionally, the atomization driving circuit further includes: A sampling circuit is connected to both the heating element and the controller. The sampling circuit is used to sample the terminal voltage of the heating element and output the sampled voltage to the controller.

[0017] A second aspect of the present invention provides an atomizing device, including a heating element, an aerosol generating matrix, and an atomizing driving circuit as described above, wherein the atomizing driving circuit is connected to the heating element, and the heating element and the aerosol generating matrix are disposed opposite to each other.

[0018] The beneficial effects of the embodiments of the present invention compared with the prior art are as follows: The above-mentioned atomization driving circuit includes a power module, a controller, an atomization circuit, and a temperature sensing circuit. The atomization circuit includes a power transistor. When the atomization device starts normally or is accidentally triggered, the controller outputs a corresponding atomization control signal. The power transistor converts the working voltage output by the power module into a driving voltage according to the atomization control signal output by the controller to drive the heating element to heat up. The heating element atomizes aerosol to generate a matrix and generate aerosol. When the temperature of the atomization device is too high, the temperature sensing circuit outputs a turn-off voltage less than the threshold voltage to the power transistor. The power transistor turns off, the atomization circuit stops power output, the heating element stops atomizing, and the temperature of the heating element stops rising, thereby realizing the over-temperature protection of the atomization device. Attached Figure Description

[0019] Figure 1 This is a schematic diagram of a first module of the atomization driving circuit provided in Embodiment 1 of the present invention; Figure 2 This is a schematic diagram of a second module of the atomization driving circuit provided in Embodiment 1 of the present invention; Figure 3 This is a schematic diagram of the third module of the atomization driving circuit provided in Embodiment 1 of the present invention; Figure 4 This is a circuit diagram of the atomization driving circuit provided in Embodiment 2 of the present invention; Figure 5 This is a circuit diagram of the atomization driving circuit provided in Embodiment 3 of the present invention; Figure 6 This is a circuit diagram of the atomization driving circuit provided in Embodiment 4 of the present invention; Figure 7 This is a circuit diagram of the atomization driving circuit provided in Embodiment 5 of the present invention; Figure 8 This is a circuit diagram of the atomization driving circuit provided in Embodiment Six of the present invention; Figure 9 This is a circuit diagram of the atomization driving circuit provided in Embodiment 7 of the present invention; Figure 10 This is a schematic diagram of the atomization driving circuit provided in Embodiment 8 of the present invention; Figure 11 This is a circuit diagram of the atomization driving circuit provided in Embodiment 8 of the present invention; Figure 12 This is a schematic diagram of the atomizing device provided in Embodiment 9 of the present invention.

[0020] The figures in the diagram are labeled as follows: 100. Atomization drive circuit; 200. Heating element; 300. Aerosol generation matrix; 10. Power module; 20. Controller; 30. Atomization circuit; 40. Temperature sensing circuit; 50. Indicator module; 60. Sampling circuit; 31. Power transistor; 11. Charging module; 12. Battery; Q1, first power transistor; Q2, second power transistor; R1, first resistor; R2, second resistor; R3, third resistor; NTC, thermistor; PWM, pulse width modulation signal; VCC, operating voltage; Vfb, sampling voltage. Detailed Implementation

[0021] To make the technical problems to be solved, the technical solutions, and the beneficial effects of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present invention and are not intended to limit the present invention.

[0022] It should be noted that when a component is referred to as being "fixed to" or "set on" another component, it can be directly on or indirectly on that other component. When a component is referred to as being "connected to" another component, it can be directly connected to or indirectly connected to that other component.

[0023] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.

[0024] Example 1 A first aspect of this invention provides an atomization driving circuit 100, which is disposed within an atomization device 1, such as... Figure 1 and Figure 2 As shown, the atomization drive circuit 100 is also connected to the heating element 200 of the atomization device 1.

[0025] In this embodiment, the atomization driving circuit 100 includes: Power module 10 is used to output the operating voltage VCC; Controller 20, connected to power module 10, is used to output atomization control signal according to trigger signal; The atomizing circuit 30 is connected in series with the heating element 200 between the power supply terminal and the ground terminal of the power module 10. The atomizing circuit 30 is also connected to the controller 20. The atomizing circuit 30 includes at least a power transistor 31. The power transistor 31 of the atomizing circuit 30 converts the working voltage VCC into a driving voltage according to the atomization control signal and outputs it to the heating element 200 to drive the heating element 200 to heat up and atomize the aerosol to generate the matrix 300. A temperature sensing circuit 40 is disposed inside the atomizing device 1 and connected to the power transistor 31. The temperature sensing circuit 40 is used to output a shutdown voltage to the power transistor 31 when the temperature of the atomizing device 1 exceeds the temperature threshold, so as to control the power transistor 31 to shut down the output. The absolute value of the shutdown voltage is less than the absolute value of the threshold voltage of the power transistor 31.

[0026] In this embodiment, the atomizing device 1 may also be provided with a accommodating cavity, a matrix belt, or other carriers. The carriers are used to accommodate or support the aerosol generating matrix 300. The aerosol generating matrix 300 may be a liquid or solid medium. The heating element 200 may be a heating wire, a heating film, or the like. The heating element 200 is arranged corresponding to the carrier and may be arranged inside or adjacent to the carrier. When the heating element 200 receives a driving voltage, it heats up and atomizes the aerosol generating matrix 300 to generate aerosol, which can be inhaled by the user.

[0027] The atomizing device 1 may also include a corresponding airflow sensor and / or interactive components. The interactive components may be structures such as touch screens or buttons. The airflow sensor can detect the suction action and output a corresponding detection signal, which may be a first trigger signal. The interactive components can interact with the user and generate corresponding interactive signals, such as button signals or touch signals, which may be a second trigger signal.

[0028] The connection method of the power module 10, power transistor 31, and heating element 200 can be specifically set according to the switching type of power transistor 31, such as... Figure 1 As shown, the power module 10, power transistor 31, and heating element 200 can be connected in sequence, or as shown in the diagram. Figure 2 As shown, the power module 10, the heating element 200, and the power transistor 31 are connected in sequence.

[0029] When the atomizing device 1 is working normally, when the controller 20 receives the trigger signal output by the airflow sensor and / or the interactive component, the controller 20 outputs the atomization control signal to the power transistor 31 in the atomization circuit 30. The power transistor 31 performs power conversion, converting the working voltage VCC output by the power module 10 into a driving voltage. The driving voltage is output to the heating element 200. When the heating element 200 receives the driving voltage, it heats up and atomizes the aerosol generating matrix 300 to generate aerosol, which can be inhaled by the user.

[0030] The power transistor 31 can be a switching transistor with controlled on / off states, such as a bipolar transistor or a field-effect transistor. The atomization control signal can be a corresponding high-level signal or a pulse width modulation (PWM) signal. The switching type of the power transistor 31 and the signal type of the atomization control signal are not limited.

[0031] The temperature sensing circuit is located at the corresponding position of the atomizing device 1. In one optional embodiment, the temperature sensing circuit 40 is attached to the housing of the atomizing device 1. In another optional embodiment, the temperature sensing circuit 40 is located near the power tube 31. In yet another optional embodiment, the temperature sensing circuit 40 is located on the carrier, for example, on the liquid storage chamber.

[0032] During the heating process of the heating element 200, the temperature of the corresponding heat source or structure of the atomizing device 1 rises. When the temperature of the atomizing device 1 does not exceed the temperature threshold, the temperature sensing circuit 40 cuts off the output voltage to the power transistor 31, and the power transistor 31 maintains normal power output.

[0033] When the temperature of the atomizing device 1 exceeds the temperature threshold, the temperature sensing circuit 40 outputs a shutdown voltage to the control terminal of the power transistor 31. The absolute value of the shutdown voltage is less than the absolute value of the threshold voltage of the power transistor 31, so the power transistor 31 is turned off and cuts off the output drive voltage to the heating element 200. The heating element 200 stops atomizing and the temperature of the heating element 200 stops rising, thereby realizing the over-temperature protection of the atomizing device 1 under normal operating conditions.

[0034] Similarly, when the atomizing device 1 is transported or used, the airflow sensor may automatically activate and output a corresponding detection signal due to environmental factors such as static electricity or air pressure changes, and / or the interactive component may be accidentally triggered, resulting in the output of a corresponding interactive signal. At this time, the controller 20 receives the trigger signal output by the airflow sensor and / or the interactive component, and outputs an atomization control signal to the power transistor 31 in the atomization circuit 30. The power transistor 31 performs power conversion, converting the working voltage VCC output by the power module 10 into a driving voltage. The driving voltage is output to the heating element 200. When the heating element 200 receives the driving voltage, it heats up and atomizes the aerosol generating matrix 300 to generate an aerosol, which can be inhaled by the user.

[0035] When frequent self-starting occurs, the temperature of the heating element 200 continues to rise, and correspondingly, the temperature of the atomizing device 1 continues to rise. When the temperature of the atomizing device 1 exceeds the temperature threshold, the temperature sensing circuit 40 outputs a shutdown voltage to the control terminal of the power transistor 31. The absolute value of the shutdown voltage is less than the absolute value of the threshold voltage of the power transistor 31, so the power transistor 31 is turned off and cuts off the output driving voltage to the heating element 200. The heating element 200 stops atomizing, and the temperature of the heating element 200 stops rising, thereby realizing the over-temperature protection of the atomizing device 1 in the state of false triggering.

[0036] The power module 10 can use a corresponding battery 12, conversion circuit, etc. In an optional embodiment, such as Figure 3 As shown, the power module 10 includes a charging module 11 and a battery 12 connected to each other. The charging module 11 may include a charging circuit and a charging interface. The charging interface may be a USB interface or a magnetic contact structure. The charging circuit connects to an external charging device through the charging interface and obtains external power. The charging circuit performs power conversion and outputs charging power to the battery 12 to charge the battery 12.

[0037] like Figure 3 As shown, in order to indicate the working status of the atomizing device 1, the atomizing drive circuit 100 also includes an indicator module 50. The indicator module 50 can be an LED light or a display screen. The indicator module 50 is connected to the controller 20 and can also be connected to the power module 10. The indicator module 50 sends out corresponding indicator signals or indicator content according to the indicator signals of the controller 20.

[0038] In addition to the power transistor 31, the atomizing circuit 30 can also be equipped with corresponding peripheral circuits. The temperature sensing circuit 40 can adopt the structure of corresponding thermistor NTC, temperature sensor, etc.

[0039] The beneficial effects of the embodiments of the present invention compared with the prior art are as follows: The atomization driving circuit 100 includes a power module 10, a controller 20, an atomization circuit 30, and a temperature sensing circuit 40. The atomization circuit 30 includes a power transistor 31. When the atomization device 1 starts normally or is accidentally triggered, the controller 20 outputs a corresponding atomization control signal. The power transistor 31 converts the working voltage VCC output by the power module 10 into a driving voltage according to the atomization control signal output by the controller 20 to drive the heating element 200 to heat up. The heating element 200 atomizes the aerosol and generates the aerosol in the matrix 300. When the temperature of the atomization device 1 is too high, the temperature sensing circuit 40 outputs a turn-off voltage less than the threshold voltage to the power transistor 31. The power transistor 31 turns off, the atomization circuit 30 stops power output, the heating element 200 stops atomizing, and the temperature of the heating element 200 stops rising, thereby realizing the over-temperature protection of the atomization device 1.

[0040] Example 2 In an alternative embodiment, such as Figure 4 As shown, the atomizing circuit 30 includes a first resistor R1 and a first power transistor Q1; The first end of the first resistor R1 is connected to the controller 20, the second end of the first resistor R1 is connected to the control terminal of the first power transistor Q1, the input terminal of the first power transistor Q1 is connected to the power supply terminal of the power module 10, the output terminal of the first power transistor Q1 is connected to the first end of the heating element 200, and the second end of the heating element 200 is grounded.

[0041] The first power transistor Q1 is a P-channel field-effect transistor. The source of the P-channel field-effect transistor is connected to the power supply terminal of the power module 10, the drain of the P-channel field-effect transistor is connected to the first terminal of the heating element 200, and the gate of the P-channel field-effect transistor is connected to the second terminal of the first resistor R1. The temperature sensing circuit 40 includes a thermistor NTC. The first terminal of the thermistor NTC is connected to the gate of the P-channel field-effect transistor, and the second terminal of the thermistor NTC is connected to the source of the P-channel field-effect transistor. The thermistor NTC is a negative temperature coefficient thermistor NTC.

[0042] In this embodiment, the first power transistor Q1 is a P-channel field-effect transistor, and the atomization control signal is a pulse width modulation signal (PWM). When the PWM signal is low, and the temperature of the atomizing device 1 does not exceed the temperature threshold, the gate-source voltage of the first power transistor Q1 is less than the threshold voltage. At this time, the threshold voltage is a negative voltage, for example, -0.7V, and the gate-source voltage can be -1V. The first power transistor Q1 is turned on. When the PWM signal is high, the gate-source voltage of the first power transistor Q1 is greater than the threshold voltage, and the first power transistor Q1 is turned off.

[0043] When the controller 20 outputs a pulse width modulation (PWM) signal to the first power transistor Q1 under normal operating conditions or in case of a false trigger at room temperature, the first power transistor Q1 is triggered to turn on when it receives a low level and triggered to turn off when it receives a high level. At this time, the gate-source voltage of the first power transistor Q1 is: Vgs = (-VCC) (R0) / (R0+R1); Wherein, VCC represents the operating voltage output by the power module 10, R0 represents the resistance value of the thermistor NTC, and R1 represents the resistance value of the first resistor R1.

[0044] When the temperature of the atomizing device 1 rises, the resistance of the thermistor NTC decreases, and the gate-source voltage increases. When the temperature of the atomizing device 1 reaches the temperature threshold, the gate-source voltage is greater than the threshold voltage of the first power transistor Q1. At this time, the first power transistor Q1 is in the cut-off state, the atomizing circuit 30 stops power output, the heating element 200 stops atomizing, and the temperature of the heating element 200 stops rising, thereby realizing the over-temperature protection of the atomizing device 1.

[0045] For example, assuming the resistance of the first resistor R1 is 1KΩ, and the resistance of the thermistor NTC is 4.7KΩ at room temperature (25℃), when the operating voltage VCC is 3V, the gate-source voltage of the first power transistor Q1 is -2.47V at room temperature. Assuming the threshold voltage of the first power transistor Q1 is -1V, the gate-source voltage is less than the threshold voltage, satisfying the conduction condition of the first power transistor Q1. Under normal temperature, the first power transistor Q1 alternately turns on and off according to the received pulse width modulation signal PWM, and outputs a drive voltage to the heating element 200.

[0046] When the temperature of the atomizing device 1 rises, assuming the temperature threshold is 100℃, the resistance of the thermistor NTC is 0.27KΩ. After voltage division calculation, the gate-source voltage of the first power transistor Q1 is -0.63V, which is greater than the threshold voltage of the first power transistor Q1. The first power transistor Q1 is cut off, the atomizing circuit 30 stops power output, the heating element 200 stops atomizing, and the temperature of the heating element 200 stops rising, thus realizing the over-temperature protection of the atomizing device 1.

[0047] The temperature of the heating element 200 and the atomizing device 1 decreases until the temperature of the atomizing device 1 drops to the target temperature. At this time, the resistance of the thermistor NTC begins to rise to the target resistance. At this time, the gate-source voltage after the working voltage VCC is divided is less than the threshold voltage of the first power transistor Q1, which satisfies the conduction condition. Finally, the heating element 200 is balanced in a stable temperature state.

[0048] The appropriate temperature protection range can be achieved by reasonably matching the characteristic parameters of the thermistor NTC with the first resistor R1. For example, if the resistance value of the first resistor R1 remains unchanged, a thermistor NTC with a larger B value can be selected. The B value represents the sensitivity coefficient of the thermistor NTC. The larger the B value, the more sensitive the thermistor NTC is to temperature changes, and the greater the resistance change amplitude under the same temperature change, thereby achieving over-temperature protection at lower temperatures.

[0049] Meanwhile, the operating voltage VCC can be a fixed voltage or a variable voltage. When the power transistor 31 is directly connected to the battery 12, the charge of the battery 12 gradually decreases as the operation progresses. Correspondingly, the operating voltage VCC gradually decreases until it drops to the lower limit of the operating voltage VCC, at which point the controller 20 stops working. Assuming the resistance of the thermistor NTC is R0m at the temperature threshold, then within the operating voltage VCC range of the battery 12, when the temperature threshold is reached, the minimum gate-source voltage Vgs1 of the first power transistor Q1 is Vgs1 = (-VCC1). (R0m) / (R0m+R1), the maximum gate-source voltage of the first power transistor Q1 is Vgs2 = (-VCC2). (R0m) / (R0m+R1), VCC1 represents the minimum operating voltage VCC output by battery 12, and VCC2 represents the maximum operating voltage VCC output by battery 12. In order to ensure that the first power transistor Q1 is reliably turned off when the temperature reaches the temperature threshold, the minimum gate-source voltage of the first power transistor Q1 must be greater than the threshold voltage of the first power transistor Q1.

[0050] Therefore, by adjusting the resistance value of the first resistor R1, the resistance value of the first power transistor Q1, and the B value parameter, the thermistor NTC can reliably turn off the first power transistor Q1 when the temperature of the atomizing device 1 reaches the threshold voltage, thereby achieving the purpose of over-temperature protection.

[0051] Example 3 In another alternative embodiment, such as Figure 5 As shown, the atomizing circuit 30 includes a first resistor R1 and a first power transistor Q1; The first end of the first resistor R1 is connected to the controller 20, the second end of the first resistor R1 is connected to the control terminal of the first power transistor Q1, the input terminal of the first power transistor Q1 is connected to the second end of the heating element 200, the first end of the heating element 200 is connected to the power supply terminal of the power module 10, and the output terminal of the first power transistor Q1 is grounded.

[0052] The first power transistor Q1 is an N-channel field-effect transistor. The drain of the N-channel field-effect transistor is connected to the second terminal of the heating element 200, the source of the N-channel field-effect transistor is grounded, and the gate of the N-channel field-effect transistor is connected to the second terminal of the first resistor R1. The temperature sensing circuit 40 includes a thermistor NTC. The first terminal of the thermistor NTC is connected to the gate of the N-channel field-effect transistor, and the second terminal of the thermistor NTC is grounded. The thermistor NTC is a negative temperature coefficient thermistor NTC.

[0053] In this embodiment, the first power transistor Q1 is an N-channel field-effect transistor, and the atomization control signal is a pulse width modulation signal (PWM). When the PWM signal is high, and the temperature of the atomizing device 1 does not exceed the temperature threshold, the gate-source voltage of the first power transistor Q1 is greater than the threshold voltage. At this time, the threshold voltage is a positive voltage, for example, 0.7V, and the gate-source voltage can be 1V. The first power transistor Q1 is turned on. When the PWM signal is low, the gate-source voltage of the first power transistor Q1 is less than the threshold voltage, and the first power transistor Q1 is turned off.

[0054] When the controller 20 outputs a pulse width modulation (PWM) signal to the first power transistor Q1 under normal operating conditions or in case of a false trigger at room temperature, the first power transistor Q1 is triggered to turn on when it receives a low level and triggered to turn off when it receives a high level. At this time, the gate-source voltage of the first power transistor Q1 is: Vgs=Vgh (R0) / (R0+R1); Where Vgh represents the high voltage of the pulse width modulation signal PWM, R0 represents the resistance value of the thermistor NTC, and R1 represents the resistance value of the first resistor R1.

[0055] When the temperature of the atomizing device 1 rises, the resistance of the thermistor NTC decreases, and the gate-source voltage decreases. When the temperature of the atomizing device 1 reaches the temperature threshold, the gate-source voltage is less than the threshold voltage of the first power transistor Q1. At this time, the first power transistor Q1 is in the cut-off state, the atomizing circuit 30 stops power output, the heating element 200 stops atomizing, and the temperature of the heating element 200 stops rising, thereby realizing the over-temperature protection of the atomizing device 1.

[0056] For example, assuming the resistance of the first resistor R1 is 1KΩ, and the resistance of the thermistor NTC is 4.7KΩ at room temperature (25℃), when Vgh is 4V and the driving voltage is 1V, the gate-source voltage of the first power transistor Q1 is 3.29V at room temperature. Assuming the threshold voltage of the first power transistor Q1 is 1V, the gate-source voltage is greater than the threshold voltage, satisfying the conduction condition of the first power transistor Q1. Under normal temperature, the first power transistor Q1 alternately turns on and off according to the received pulse width modulation signal PWM, and outputs the driving voltage to the heating element 200.

[0057] When the temperature of the atomizing device 1 rises, assuming the temperature threshold is 100℃, the resistance of the thermistor NTC is 0.27KΩ. After voltage division calculation, the gate-source voltage of the first power transistor Q1 is 0.85V, which is less than the threshold voltage of the first power transistor Q1. The first power transistor Q1 is cut off, the atomizing circuit 30 stops power output, the heating element 200 stops atomizing, and the temperature of the heating element 200 stops rising, thereby realizing the over-temperature protection of the atomizing device 1.

[0058] The temperature of the heating element 200 and the atomizing device 1 decreases until the temperature of the atomizing device 1 drops to the target temperature. At this time, the resistance of the thermistor NTC begins to rise to the target resistance. At this time, the gate-source voltage after the working voltage VCC is divided is greater than the threshold voltage of the first power transistor Q1, which satisfies the conduction condition. Finally, the heating element 200 is balanced in a stable temperature state.

[0059] The appropriate temperature protection range can be achieved by reasonably matching the characteristic parameters of the thermistor NTC with the first resistor R1. For example, if the resistance value of the first resistor R1 remains unchanged, a thermistor NTC with a larger B value can be selected. The B value represents the sensitivity coefficient of the thermistor NTC. The larger the B value, the more sensitive the thermistor NTC is to temperature changes, and the greater the resistance change amplitude under the same temperature change, thereby achieving over-temperature protection at lower temperatures.

[0060] Example 4 Based on Embodiments 2 and 3, in an optional embodiment, such as Figure 6 As shown, the thermistor NTC includes multiple thermistors, which are connected in series or in parallel, and are respectively disposed at different positions in the atomizing device 1.

[0061] In this embodiment, the thermistors NTC can be set at corresponding positions in the atomizing device 1. For example, assuming there are three thermistors NTC, the first thermistor NTC is attached to the housing of the atomizing device 1, the second thermistor NTC is set near the power transistor 31, and the third thermistor NTC is set on the liquid storage chamber. The multiple thermistors NTC detect the temperature at different positions in the atomizing device 1. When the temperature at one or more positions reaches the temperature threshold, the resistance of one or more thermistors NTC decreases, and the total resistance of the multiple thermistors NTC decreases. Correspondingly, the absolute value of the gate-source voltage is less than the absolute value of the threshold voltage of the first power transistor Q1, and the first power transistor Q1 is turned off. This enables multi-point temperature detection of the atomizing device 1, avoids the problem of untimely over-temperature protection caused by using a single thermistor NTC, and improves the efficiency of over-temperature protection.

[0062] Example 5 In another alternative embodiment, such as Figure 7 As shown, the atomizing circuit 30 includes a second resistor R2 and a second power transistor Q2; The first end of the second resistor R2 and the control end of the second power transistor Q2 are connected to form the control end of the atomizing circuit 30. The input end of the second power transistor Q2, the second end of the second resistor R2 and the power module 10 are connected. The output end of the second power transistor Q2 is connected to the first end of the heating element 200 and the second end of the heating element 200 is grounded. The second power transistor Q2 is a P-channel field-effect transistor. The source, drain, and gate of the P-channel field-effect transistor constitute the input, output, and control terminals of the second power transistor Q2, respectively. The temperature sensing circuit 40 includes a thermistor NTC. The first terminal of the thermistor NTC is connected to the controller 20, and the second terminal of the thermistor NTC is connected to the control terminal of the second power transistor Q2. The thermistor NTC is a positive temperature coefficient thermistor NTC.

[0063] In this embodiment, the second power transistor Q2 is a P-channel field-effect transistor, and the atomization control signal is a pulse width modulation signal (PWM). When the PWM signal is low, and the temperature of the atomizing device 1 does not exceed the temperature threshold, the gate-source voltage of the second power transistor Q2 is less than the threshold voltage. At this time, the threshold voltage is negative, for example, -0.7V, and the gate-source voltage can be -1V. The second power transistor Q2 is turned on. When the PWM signal is high, the gate-source voltage of the second power transistor Q2 is greater than the threshold voltage, and the second power transistor Q2 is turned off.

[0064] When the controller 20 outputs a pulse width modulation (PWM) signal to the second power transistor Q2 under normal operating conditions or in case of a false trigger at room temperature, the second power transistor Q2 is triggered to turn on when it receives a low level and triggered to turn off when it receives a high level. At this time, the gate-source voltage of the second power transistor Q2 is: Vgs = (-VCC) (R2) / (R0+R2); Wherein, VCC represents the operating voltage VCC output by the power module 10, R0 represents the resistance value of the thermistor NTC, and R2 represents the resistance value of the second resistor R2.

[0065] When the temperature of the atomizing device 1 rises, the resistance of the thermistor NTC increases, and the gate-source voltage increases. When the temperature of the atomizing device 1 reaches the temperature threshold, the gate-source voltage is greater than the threshold voltage of the second power transistor Q2. At this time, the second power transistor Q2 is in the cut-off state, the atomizing circuit 30 stops power output, the heating element 200 stops atomizing, and the temperature of the heating element 200 stops rising, thereby realizing the over-temperature protection of the atomizing device 1.

[0066] For example, assuming the resistance of the second resistor R2 is 4.7KΩ, and the resistance of the thermistor NTC is 1KΩ at room temperature (25℃), when the operating voltage VCC is 3V, the gate-source voltage of the second power transistor Q2 is -2.47V at room temperature. Assuming the threshold voltage of the second power transistor Q2 is -1V, the gate-source voltage is less than the threshold voltage, which satisfies the conduction condition of the second power transistor Q2. Under normal temperature, the second power transistor Q2 alternately turns on and off according to the received pulse width modulation signal PWM, and outputs a drive voltage to the heating element 200.

[0067] When the temperature of atomizing device 1 rises, assuming the temperature threshold is 100℃, the resistance of the thermistor NTC rises to 10KΩ. After voltage division calculation, the gate-source voltage of the second power transistor Q2 is -0.95V, which is greater than the threshold voltage of the second power transistor Q2. The second power transistor Q2 is cut off, the atomizing circuit 30 stops power output, the heating element 200 stops atomizing, and the temperature of the heating element 200 stops rising, thus realizing the over-temperature protection of atomizing device 1.

[0068] The temperature of the heating element 200 and the atomizing device 1 decreases until the temperature of the atomizing device 1 drops to the target temperature. At this time, the resistance of the thermistor NTC begins to decrease to the target resistance. At this time, the gate-source voltage after the working voltage VCC is divided is less than the threshold voltage of the second power transistor Q2, which satisfies the conduction condition. Finally, the heating element 200 is balanced in a stable temperature state.

[0069] The appropriate temperature protection range can be achieved by reasonably matching the characteristic parameters of the thermistor NTC and the second resistor R2. For example, if the resistance value of the second resistor R2 remains unchanged, the thermistor NTC with a larger B value can be selected. The B value represents the sensitivity coefficient of the thermistor NTC. The larger the B value, the more sensitive the thermistor NTC is to temperature changes, and the greater the resistance change amplitude under the same temperature change, thus achieving over-temperature protection at lower temperatures.

[0070] Meanwhile, the operating voltage VCC can be a fixed voltage or a variable voltage. When the power transistor 31 is directly connected to the battery 12, the charge of the battery 12 gradually decreases as the operation progresses. Correspondingly, the operating voltage VCC gradually decreases until it drops to the lower limit of the operating voltage VCC, at which point the controller 20 stops working. Assuming that the resistance of the thermistor NTC is R0m at the temperature threshold, then within the operating voltage VCC range of the battery 12, when the temperature threshold is reached, the minimum gate-source voltage Vgs1 of the second power transistor Q2 is Vgs1 = (-VCC1). (R2) / (R0m+R2), the maximum gate-source voltage of the second power transistor Q2 is Vgs2=(-VCC2). (R2) / (R0m+R2), VCC1 represents the minimum operating voltage VCC output by battery 12, and VCC2 represents the maximum operating voltage VCC output by battery 12. In order to ensure that the second power transistor Q2 is reliably turned off when the temperature reaches the temperature threshold, the minimum gate-source voltage of the second power transistor Q2 must be greater than the threshold voltage of the second power transistor Q2.

[0071] Therefore, by adjusting the resistance value of the second resistor R2, the resistance value of the second power transistor Q2, and the B value, the thermistor NTC can reliably turn off the second power transistor Q2 when the temperature of the atomizing device 1 reaches the threshold voltage, thus achieving the purpose of over-temperature protection.

[0072] Example 6 In another alternative embodiment, such as Figure 8 As shown, the atomizing circuit 30 includes a second resistor R2 and a second power transistor Q2; The first end of the second resistor R2 and the control end of the second power transistor Q2 are connected to form the control end of the atomizing circuit 30. The input end of the second power transistor Q2 is connected to the second end of the heating element 200. The first end of the heating element 200 is connected to the power supply end of the power module 10. The output end of the second power transistor Q2 and the second resistor R2 are grounded. The second power transistor Q2 is an N-channel field-effect transistor. The drain, source, and gate of the N-channel field-effect transistor constitute the input, output, and control terminals of the second power transistor Q2, respectively. The temperature sensing circuit 40 includes a thermistor NTC. The first terminal of the thermistor NTC is connected to the controller 20, and the second terminal of the thermistor NTC is connected to the control terminal of the second power transistor Q2. The thermistor NTC is a positive temperature coefficient thermistor NTC.

[0073] In this embodiment, the second power transistor Q2 is an N-channel field-effect transistor, and the atomization control signal is a pulse width modulation signal (PWM). When the PWM signal is high, and the temperature of the atomizing device 1 does not exceed the temperature threshold, the gate-source voltage of the second power transistor Q2 is greater than the threshold voltage. At this time, the threshold voltage is a positive voltage, for example, 0.7V, and the gate-source voltage can be 1V. The second power transistor Q2 is turned on. When the PWM signal is low, the gate-source voltage of the second power transistor Q2 is less than the threshold voltage, and the second power transistor Q2 is turned off.

[0074] When the controller 20 outputs a pulse width modulation (PWM) signal to the second power transistor Q2 under normal operating conditions or in case of a false trigger at room temperature, the second power transistor Q2 is triggered to turn on when it receives a low level and triggered to turn off when it receives a high level. At this time, the gate-source voltage of the second power transistor Q2 is: Vgs=Vgh (R2) / (R0+R2); Where Vgh represents the high voltage of the pulse width modulation signal PWM, R0 represents the resistance of the thermistor NTC, and R2 represents the resistance of the second resistor R2.

[0075] When the temperature of the atomizing device 1 rises, the resistance of the thermistor NTC increases, and the gate-source voltage decreases. When the temperature of the atomizing device 1 reaches the temperature threshold, the gate-source voltage is less than the threshold voltage of the second power transistor Q2. At this time, the second power transistor Q2 is in the cut-off state, the atomizing circuit 30 stops power output, the heating element 200 stops atomizing, and the temperature of the heating element 200 stops rising, thereby realizing the over-temperature protection of the atomizing device 1.

[0076] For example, assuming the resistance of the second resistor R2 is 4.7KΩ, and the resistance of the thermistor NTC is 1KΩ at room temperature (25℃), when Vgh is 4V and the driving voltage is 1V, the gate-source voltage of the second power transistor Q2 is 3.29V at room temperature. Assuming the threshold voltage of the second power transistor Q2 is 1V, the gate-source voltage is greater than the threshold voltage, satisfying the conduction condition of the second power transistor Q2. Under normal temperature, the second power transistor Q2 alternately turns on and off according to the received pulse width modulation signal PWM, and outputs the driving voltage to the heating element 200.

[0077] When the temperature of atomizing device 1 rises, assuming the temperature threshold is 100℃, the resistance of the thermistor NTC is 15KΩ. After voltage division calculation, the gate-source voltage of the second power transistor Q2 is 0.95V, which is less than the threshold voltage of the second power transistor Q2. The second power transistor Q2 is cut off, the atomizing circuit 30 stops power output, the heating element 200 stops atomizing, and the temperature of the heating element 200 stops rising, thus realizing the over-temperature protection of atomizing device 1.

[0078] The temperature of the heating element 200 and the atomizing device 1 decreases until the temperature of the atomizing device 1 drops to the target temperature. At this time, the resistance of the thermistor NTC begins to decrease to the target resistance. At this time, the gate-source voltage after the working voltage VCC is divided is greater than the threshold voltage of the second power transistor Q2, which satisfies the conduction condition. Finally, the heating element 200 is balanced in a stable temperature state.

[0079] The appropriate temperature protection range can be achieved by reasonably matching the characteristic parameters of the thermistor NTC and the second resistor R2. For example, if the resistance value of the second resistor R2 remains unchanged, the thermistor NTC with a larger B value can be selected. The B value represents the sensitivity coefficient of the thermistor NTC. The larger the B value, the more sensitive the thermistor NTC is to temperature changes, and the greater the resistance change amplitude under the same temperature change, thus achieving over-temperature protection at lower temperatures.

[0080] Example 7 Based on Embodiments 5 and 6, in an optional embodiment, such as Figure 9 As shown, the thermistor NTC includes multiple thermistors, which are connected in series or in parallel, and are respectively disposed at different positions in the atomizing device 1.

[0081] In this embodiment, the thermistors NTC can be set at corresponding positions in the atomizing device 1. For example, assuming there are three thermistors NTC, the first thermistor NTC is attached to the housing of the atomizing device 1, the second thermistor NTC is set near the power transistor 31, and the third thermistor NTC is set on the liquid storage chamber. The multiple thermistors NTC detect the temperature at different positions in the atomizing device 1. When the temperature at one or more positions reaches the temperature threshold, the resistance of one or more thermistors NTC increases, and the total resistance of the multiple thermistors NTC increases. Correspondingly, the absolute value of the gate-source voltage is less than the absolute value of the threshold voltage of the second power transistor Q2, and the second power transistor Q2 is turned off. This enables multi-point temperature detection of the atomizing device 1, avoids the problem of untimely over-temperature protection caused by using a single thermistor NTC, and improves the efficiency of over-temperature protection.

[0082] Example 8 In an alternative embodiment, such as Figure 10 As shown, the atomization driving circuit 100 also includes: The sampling circuit 60 is connected to the heating element 200 and the controller 20 respectively. The sampling circuit 60 is used to sample the terminal voltage of the heating element 200 and output the sampling voltage Vfb to the controller 20.

[0083] In this embodiment, the controller 20 also performs negative feedback regulation on the power transistor 31 by acquiring the sampled voltage Vfb, so as to control the power transistor 31 to output the target drive voltage and achieve constant voltage control.

[0084] The controller 20 compares the sampled voltage Vfb with the built-in reference voltage. When the reference voltage is detected to be greater than the sampled voltage Vfb, the controller 20 increases or decreases the magnitude of the atomization control signal, thereby controlling the power transistor 31 to decrease the output current and increase the output voltage, and the sampled voltage Vfb increases. When the reference voltage is detected to be less than the sampled voltage Vfb, the controller 20 increases or decreases the magnitude of the atomization control signal, thereby controlling the power transistor 31 to increase the output current and decrease the output voltage, and the sampled voltage Vfb decreases, until the sampled voltage Vfb equals the reference voltage. Correspondingly, the driving voltage received by the heating element 200 reaches the target driving voltage, realizing constant voltage output.

[0085] The sampling circuit 60 can adopt a corresponding sampling resistor, voltage divider circuit, or other structure. In an optional embodiment, such as... Figure 11 As shown, the sampling circuit 60 includes a third resistor R3. The first end of the third resistor R3 is connected to the first end of the heating element 200, and the second end of the third resistor R3 is connected to the controller 20. The third resistor R3 serves as a sampling resistor and feeds back the sampling voltage Vfb to the controller 20.

[0086] Example 9 like Figure 12 As shown, a second aspect of this invention provides an atomizing device 1, which includes a heating element 200, an aerosol generating matrix 300, and an atomization driving circuit 100. The specific structure of the atomization driving circuit 100 is as described in the above embodiments. Since this atomizing device 1 adopts all the technical solutions of all the above embodiments, it has at least all the beneficial effects brought about by the technical solutions of the above embodiments, which will not be described in detail here. The atomization driving circuit 100 is connected to the heating element 200, and the heating element 200 and the aerosol generating matrix 300 are disposed opposite to each other.

[0087] In this embodiment, the atomizing device 1 may also be provided with a accommodating cavity, a matrix belt, or other carriers. The carriers are used to accommodate or support the aerosol generating matrix 300. The aerosol generating matrix 300 may be a liquid or solid medium. The heating element 200 may be a heating wire, a heating film, or the like. The heating element 200 is arranged corresponding to the carrier and may be arranged inside or adjacent to the carrier. When the heating element 200 receives a driving voltage, it heats up and atomizes the aerosol generating matrix 300 to generate aerosol, which can be inhaled by the user.

[0088] The atomizing device 1 may also include a corresponding airflow sensor and / or interactive components. The interactive components may be structures such as touch screens or buttons. The airflow sensor can detect the suction action and output a corresponding detection signal, which may be a first trigger signal. The interactive components can interact with the user and generate corresponding interactive signals, such as button signals or touch signals, which may be a second trigger signal.

[0089] When the atomization driving circuit 100 is working normally, when it receives a trigger signal from the airflow sensor and / or the interactive component, the atomization driving circuit 100 performs power conversion and outputs a driving voltage to the heating element 200. When the heating element 200 receives the driving voltage, it heats up and atomizes the aerosol generating matrix 300 to generate an aerosol, which can be inhaled by the user.

[0090] During the heating process of the heating element 200, the temperature of the corresponding heat source or structure of the atomizing device 1 rises. When the temperature of the atomizing device 1 exceeds the temperature threshold, the atomizing drive circuit 100 shuts off the output drive voltage to the heating element 200, the heating element 200 stops atomizing, and the temperature of the heating element 200 stops rising, thereby realizing the over-temperature protection of the atomizing device 1 under normal working conditions.

[0091] The above-described embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention, and should all be included within the protection scope of the present invention.

Claims

1. An atomizing drive circuit, disposed within an atomizing device, characterized in that, The atomization drive circuit is also connected to the heating element of the atomization device. The atomization driving circuit includes: The power module is used to output the operating voltage; The controller, connected to the power module, is used to output an atomization control signal according to the trigger signal; An atomizing circuit is connected in series with the heating element between the power supply terminal and the ground terminal of the power module. The atomizing circuit is also connected to the controller. The atomizing circuit includes at least a power transistor. The power transistor of the atomizing circuit converts the operating voltage into a driving voltage according to the atomizing control signal and outputs it to the heating element to drive the heating element to heat up and atomize the aerosol to generate a matrix. A temperature sensing circuit is disposed within the atomizing device and connected to the power transistor. The temperature sensing circuit is used to output a shutdown voltage to the power transistor when the temperature of the atomizing device exceeds a temperature threshold, so as to control the power transistor to shut down the output. The absolute value of the shutdown voltage is less than the absolute value of the threshold voltage of the power transistor.

2. The atomization driving circuit as described in claim 1, characterized in that, The atomizing circuit includes a first resistor and a first power transistor; The first end of the first resistor is connected to the controller, and the second end of the first resistor is connected to the control terminal of the first power transistor. The input terminal of the first power transistor is connected to the power supply terminal of the power module, and the output terminal of the first power transistor is connected to the first end of the heating element, and the second end of the heating element is grounded; or, the input terminal of the first power transistor is connected to the second end of the heating element, the output terminal of the first power transistor is grounded, and the first end of the heating element is connected to the power supply terminal of the power module.

3. The atomization driving circuit as described in claim 2, characterized in that, The first power transistor is a P-channel field-effect transistor. The source of the P-channel field-effect transistor is connected to the power supply terminal of the power module, the drain of the P-channel field-effect transistor is connected to the first terminal of the heating element, and the gate of the P-channel field-effect transistor is connected to the second terminal of the first resistor. The temperature sensing circuit includes a thermistor, the first end of which is connected to the gate of the P-channel field-effect transistor, and the second end of which is connected to the source of the P-channel field-effect transistor. The thermistor is a negative temperature coefficient thermistor.

4. The atomization driving circuit as described in claim 2, characterized in that, The first power transistor is an N-channel field-effect transistor. The drain of the N-channel field-effect transistor is connected to the second terminal of the heating element, the source of the N-channel field-effect transistor is grounded, and the gate of the N-channel field-effect transistor is connected to the second terminal of the first resistor. The temperature sensing circuit includes a thermistor, the first end of which is connected to the gate of the N-channel field-effect transistor, and the second end of which is grounded. The thermistor is a negative temperature coefficient thermistor.

5. The atomization driving circuit as described in claim 3 or 4, characterized in that, The thermistor includes multiple thermistors, which are connected in series or in parallel, and are respectively disposed at different positions in the atomizing device.

6. The atomization driving circuit as described in claim 1, characterized in that, The atomizing circuit includes a second resistor and a second power transistor; The first end of the second resistor and the control end of the second power transistor are connected to form the control end of the atomizing circuit. The input end of the second power transistor, the second end of the second resistor, and the power supply end of the power module are connected. The output end of the second power transistor is connected to the first end of the heating element, and the second end of the heating element is grounded. The second power transistor is a P-channel field-effect transistor, and the source, drain, and gate of the P-channel field-effect transistor constitute the input terminal, output terminal, and control terminal of the second power transistor, respectively. The temperature sensing circuit includes a thermistor, the first end of which is connected to the controller, and the second end of which is connected to the control terminal of the second power transistor. The thermistor is a positive temperature coefficient thermistor.

7. The atomization driving circuit as described in claim 1, characterized in that, The atomizing circuit includes a second resistor and a second power transistor; The first end of the second resistor and the control end of the second power transistor are connected to form the control end of the atomizing circuit. The input end of the second power transistor is connected to the second end of the heating element. The first end of the heating element is connected to the power supply end of the power module. The output end of the second power transistor and the second end of the second resistor are grounded. The second power transistor is an N-channel field-effect transistor, and the drain, source, and gate of the N-channel field-effect transistor constitute the input terminal, output terminal, and control terminal of the second power transistor, respectively. The temperature sensing circuit includes a thermistor, the first end of which is connected to the controller, and the second end of which is connected to the control terminal of the second power transistor. The thermistor is a positive temperature coefficient thermistor.

8. The atomizing drive circuit as described in claim 6 or 7, characterized in that, The thermistor includes multiple thermistors, which are connected in series or in parallel, and are respectively disposed at different positions in the atomizing device.

9. The atomizing drive circuit as described in claim 1, characterized in that, The atomization driving circuit also includes: A sampling circuit is connected to both the heating element and the controller. The sampling circuit is used to sample the terminal voltage of the heating element and output the sampled voltage to the controller.

10. An atomizing device, characterized in that, It includes a heating element, an aerosol generating matrix, and an atomization driving circuit as described in any one of claims 1 to 9, wherein the atomization driving circuit is connected to the heating element, and the heating element and the aerosol generating matrix are disposed opposite to each other.

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