Preparation method of hydrogen bond conduction memristor for simulating and realizing biological nerve synapse / logic operation circuit

Abstract

The invention discloses a preparation method of a hydrogen bond conduction memristor for simulating and realizing a biological nerve synapse / logic operation circuit. The memristor adopts indium tin oxide (ITO) as a bottom electrode, a Melamine crystal film as an active layer and metal (such as gold, copper, silver, titanium and the like) as a top electrode to form an electrode / active layer / electrode sandwich structure. The preparation method comprises the steps of substrate cleaning and plasma treatment, solution ultrasonic mixing and heating dissolution, heating table dispensing film forming, metal top electrode deposition and the like. The device shows a synaptic plasticity characteristic under the stimulation of pulse voltage, generates resistance transition at a starting voltage under the scanning of alternating voltage, can be used for simulating a biological nerve synaptic behavior and realizing binary logic operation, and has the advantages of simple structure, good process compatibility, low energy consumption and good repeatability. The memristor based on hydrogen bond conduction shows unprecedented bright prospects and huge potential in the fields of biological nerve devices, processors, memories, sensors, brain-computer interfaces and the like.

Description

Technical Field

[0001] This invention belongs to the field of novel storage and neuromorphic device technology, and specifically relates to a method for fabricating a hydrogen-bonded memristor that simulates biological neural synapse / logic operation circuits. Background Technology

[0002] Memristors, as a new generation of non-volatile devices and core components of neuromorphic computing, have shown broad application prospects in neuromorphic computing, online learning, and low-power logic due to their programmable resistive states and synaptic plasticity. Existing memristor systems mainly include various materials and structures such as transition metal oxides, two-dimensional materials, electrolytes, and ion gels. Organic / molecular systems characterized by hydrogen bonding have advantages such as solution fabrication, low-temperature film formation, and compatibility with flexible substrates; however, achieving stable and controllable device states and good reproducibility remains a key technological challenge. Therefore, providing a memristor fabrication method with simple processes, controllable parameter windows, and stable synaptic and logical behavior is of great significance. Summary of the Invention

[0003] This invention provides a method for fabricating a hydrogen-bonded memristor that simulates a biological neural synapse / logic operation circuit, solving the problems of high fabrication temperature, poor material system compatibility, complex film formation process, high operating voltage, and insufficient cycle consistency and environmental stability of existing memristors.

[0004] This invention provides a method for fabricating a memristor based on hydrogen bond conduction, comprising the following steps:

[0005] (1) The glass substrate containing ITO was ultrasonically cleaned three times each with anhydrous ethanol, acetone and deionized water, and then dried with nitrogen.

[0006] (2) On the surface of the dried ITO glass substrate, the hydrophilicity of the substrate is increased by using a plasma cleaning machine, so that it can be used as a bottom electrode.

[0007] (3) Place 50 mg Melamine in a 6 mL solvent bottle and treat it with an ultrasonic cleaner for 15-30 min to ensure complete mixing with the solvent;

[0008] (4) Place the suspension obtained above on a heating stage and heat it at 80-100°C for 10-15 minutes until it is completely dissolved to form a clear liquid. Then place the treated ITO glass substrate on a heating stage at 95-100°C and use a pipette to drop 25-50 μL of clear liquid onto it, allowing it to form a dense active layer film on the ITO glass substrate by high-temperature evaporation.

[0009] (5) Deposit a metal layer of about 100 nm thick on the surface of the device fabricated by the above method as the top electrode to obtain the memristor based on hydrogen bond conduction.

[0010] Preferably, the purpose of ultrasonic treatment of the ITO glass substrate with anhydrous ethanol, acetone, and deionized water is to remove dust particles and stubborn stains from its surface and to protect the ITO coating, ensuring its conductivity and transparency.

[0011] Preferably, plasma cleaning is used to treat ITO glass to enhance its surface hydrophilicity, making the ITO coating surface easier for solvents to contact.

[0012] Preferably, the solvent is at least one of deionized water, anhydrous ethanol, and N,N-dimethylformamide (DMF).

[0013] Preferably, the method for preparing the top electrode is at least one of electron beam evaporation, magnetron sputtering, thermal evaporation, chemical vapor deposition, and atomic layer deposition.

[0014] Preferably, the metal electrode is at least one of gold, platinum, titanium, silver, copper, and tantalum. Preferably, the ITO glass substrate is used as the bottom electrode, the Melamine crystal film is used as the active layer, and the metal is used as the top electrode. The three are arranged in a "sandwich" structure to form a memristor based on hydrogen bond conduction.

[0015] A method for fabricating a memristor based on hydrogen bond conduction to simulate biological neural synapses is disclosed. The memristor converts received pulse voltage stimulation into peak current, and the formation and disappearance of neural synapses are determined by the amplitude fluctuation of the peak current.

[0016] A method for fabricating a memristor based on hydrogen bond conduction in a logic operation circuit. The fabricated memristor converts the resistance change under AC voltage scanning into high and low level "0" and "1" in the digital circuit, thereby realizing the function of logic operation.

[0017] Beneficial effects:

[0018] The memristor based on hydrogen bond conduction prepared in this invention first utilizes a Melamine crystal thin film as the active layer, replacing traditional transition metal oxide materials. This process is simple, using a low-temperature solution method for film formation, facilitating scale-up and low-cost production. Simultaneously, the film is dense and uniform, with controllable crystallinity and hydrogen bond network order. The hydrogen bond-related conduction channels are easily opened and reset, achieving stable resistive switching with low voltage and low energy consumption. Secondly, it simultaneously possesses synaptic plasticity and a two-state switch function, catering to the needs of neuromorphic computing and storage logic. It can be directly applied in spiking neural networks and logic circuits, facilitating system-level integration. Finally, the materials and processes are friendly to flexible and transparent electronics, possessing application potential in wearable, sensing, and edge intelligence scenarios. Attached Figure Description

[0019] Figure 1 This is a diagram of the layered structure of a memristor, where 1 is the metal top electrode, 2 is the Melamine crystal thin film active layer, and 3 is the ITO bottom electrode.

[0020] Figure 2 The images show the actual Melamine crystal films formed by volatilization on the ITO coating; a) shows the crystal film formed by adding 25 μL of a mixture of Melamine and deionized water; b) shows the crystal film formed by adding 50 μL of a mixture of Melamine and deionized water.

[0021] Figure 3 for Figure 2 The fabricated memristor in I lim =0.01A, IV curve measured using a KEITHLEY 4200 semiconductor parameter analyzer; a is the device obtained by adding 25μL of solution, with a turn-on voltage of 1V and an on / off ratio R on / off ≈10; b is the device obtained by adding 50μL of solution, with a turn-on voltage of 1.5V and a switching ratio R. on / off ≈100.

[0022] Figure 4 Optical microscope images of crystals obtained by cooling and evaporating the prepared solution at room temperature; a) Crystals obtained by cooling and evaporating the mixture of Melamine and deionized water at room temperature; b) Crystals obtained by cooling and evaporating the mixture of Melamine and DMF at room temperature. Detailed Implementation

[0023] Example 1:

[0024] The method for fabricating a hydrogen-bonded memristor according to the present invention is described in detail below:

[0025] Select a sample containing ITO (0.7×1.2cm). 2 A glass substrate (1.2 × 1.2 × 1.1 cm) with a diameter of 185 nm. 3First, immerse the glass substrate in acetone in the first beaker, ensuring complete submersion. Then, ultrasonically clean for 15 minutes. Acetone effectively dissolves most organic contaminants (such as grease and fingerprints). Remove the glass from the acetone using plastic tweezers and transfer it directly to anhydrous ethanol in the second beaker. Ultrasonically clean for another 15 minutes. This step serves two purposes: first, to remove any small amount of contaminants that acetone cannot dissolve; and second, as a "transition" or "displacement" step, since ethanol has better compatibility with water than acetone, facilitating subsequent water washing. Remove the glass from the ethanol and place it in fresh deionized water in the third beaker, ultrasonically cleaning for 5–10 minutes. This step removes the solvent and any remaining inorganic salts. For best results, repeat the above steps three times. To expedite dehydration and drying, quickly immerse the washed glass in a fresh cup of anhydrous ethanol and agitate it a few times. Because ethanol has a much lower surface tension than water and is easily volatile, this step effectively prevents water stains during subsequent drying. Hold the glass edges with tweezers and immediately dry it with a nitrogen gun. During the purging process, the nozzle is held at a certain angle to the surface and moved at a constant speed from one end to the other to "push" the liquid out until the surface is completely dry and without any streaks.

[0026] The cleaned ITO glass substrate is placed in a plasma cleaner (30W, 10min) to increase the hydrophilicity of the substrate, so that it can be used as the bottom electrode.

[0027] Add 50 mg of Melamine to a vial and then add 6 mL of deionized water using a pipette. Sonicate for 5 minutes to ensure complete mixing with the deionized water. Place the resulting solution on a 90°C heating plate for 10 minutes to allow complete dissolution, forming a clear solution. Then, pipette 25 μL of this solution and add it dropwise onto an ITO glass substrate. Place the substrate on a 100°C heating plate to allow the surface moisture to evaporate rapidly, forming a dense Melamine crystalline film, which serves as the active layer of the memristor.

[0028] Using ion sputtering, the device fabricated by the above method is placed on a photomask, and an approximately 100 nm thick layer of gold is deposited as the top electrode using an ion sputtering instrument, thus obtaining the memristor based on hydrogen bonding. Then, the coated surface of the ITO glass substrate is used as the bottom electrode, and the ion-sputtered gold is used as the top electrode. Its performance is measured by contacting the surfaces of the bottom and top electrodes with two probes of a KEITHLEY 4200 semiconductor parameter analyzer.

[0029] Example 2:

[0030] The method for fabricating a hydrogen-bonded memristor according to the present invention is described in detail below:

[0031] Select a sample containing ITO (0.7×1.2cm). 2A glass substrate (1.2 × 1.2 × 1.1 cm) with a diameter of 185 nm. 3 First, immerse the glass substrate in acetone in the first beaker, ensuring complete submersion. Then, ultrasonically clean for 15 minutes. Acetone effectively dissolves most organic contaminants (such as grease and fingerprints). Remove the glass from the acetone using plastic tweezers and transfer it directly to anhydrous ethanol in the second beaker. Ultrasonically clean for another 15 minutes. This step serves two purposes: first, to remove any small amount of contaminants that acetone cannot dissolve; and second, as a "transition" or "displacement" step, since ethanol has better compatibility with water than acetone, facilitating subsequent water washing. Remove the glass from the ethanol and place it in fresh deionized water in the third beaker, ultrasonically cleaning for 5–10 minutes. This step removes the solvent and any remaining inorganic salts. For best results, repeat the above steps three times. To expedite dehydration and drying, quickly immerse the washed glass in a fresh cup of anhydrous ethanol and agitate it a few times. Because ethanol has a much lower surface tension than water and is easily volatile, this step effectively prevents water stains during subsequent drying. Hold the glass edges with tweezers and immediately dry it with a nitrogen gun. During the purging process, the nozzle is held at a certain angle to the surface and moved at a constant speed from one end to the other to "push" the liquid out until the surface is completely dry and without any streaks.

[0032] The cleaned ITO glass substrate is placed in a plasma cleaner (30W, 10min) to increase the hydrophilicity of the substrate, so that it can be used as the bottom electrode.

[0033] Add 50 mg of Melamine to a reagent bottle and add 6 mL of DMF reagent using a pipette. Sonicate for 5 min to ensure complete mixing with deionized water. Place the resulting solution on a 90°C heating plate for 10 min to allow complete dissolution, forming a clear solution. Then, pipette 50 μL of this solution onto an ITO glass plate and place it on a 100°C heating plate to allow the surface moisture to evaporate rapidly, forming a dense Melamine crystalline film, which serves as the active layer of the memristor.

[0034] Using magnetron sputtering, the device fabricated by the above method is placed on a photomask, and an approximately 100 nm thick layer of copper is deposited as the top electrode using an ion sputtering instrument, thus obtaining the memristor based on hydrogen bonding. Then, the coated surface of the ITO glass substrate is used as the bottom electrode, and the ion-sputtered gold is used as the top electrode. The performance is measured by contacting the surfaces of the bottom and top electrodes using two probes of a KEITHLEY 4200 semiconductor parameter analyzer.

[0035] The above detailed description of the implementation is provided only as an example and is not intended to limit the diverse implementation schemes of the present invention. Several modifications and improvements can be made without departing from the inventive concept of the present invention, and these should also be considered within the protection scope of the present invention.

Claims

1. A method for fabricating a hydrogen-bonded memristor that simulates a biological neural synapse / logic operation circuit, characterized in that: (1) The glass substrate containing ITO was ultrasonically cleaned three times each with acetone, anhydrous ethanol and deionized water, and then dried with nitrogen. (2) The surface of the ITO glass substrate was treated with a plasma cleaner (30W, 10min) to improve its hydrophilicity and used as the bottom electrode; (3) Place 50 mg Melamine in a 6 mL solvent bottle and ultrasonically treat it for 15-30 min with a CNC ultrasonic cleaner to ensure complete mixing with the solvent. (4) Place the suspension obtained above on a heating stage and heat it at 80-100°C for 10-15 minutes until it is completely dissolved to form a clear liquid. Then place the treated ITO glass substrate on a heating stage at 95-100°C and use a pipette to drop 25-50 μL of clear liquid onto it, allowing it to form a dense active layer film on the ITO glass substrate by high-temperature evaporation. (5) Deposit a metal of about 100 nm thickness on the surface of the device fabricated by the above method as the top electrode to obtain the memristor based on hydrogen bond conduction.

2. The method for fabricating a hydrogen-bonded memristor that simulates a biological neural synapse / logic operation circuit according to claim 1, characterized in that: The solvent is one of deionized water, anhydrous ethanol, and N,N-dimethylformamide (DMF).

3. The method for fabricating a hydrogen-bonded memristor that simulates a biological neural synapse / logic operation circuit according to claim 1, characterized in that: The dense active layer film is a Melamine crystal film.

4. The method for fabricating a hydrogen-bonded memristor that simulates a biological neural synapse / logic operation circuit according to claim 1, characterized in that: The method for preparing the top electrode is one of electron beam evaporation, magnetron sputtering, thermal evaporation, chemical vapor deposition, and atomic layer deposition.

5. The method for fabricating a hydrogen-bonded memristor that simulates a biological neural synapse / logic operation circuit according to claim 1, characterized in that: The metal electrode is one of gold, platinum, titanium, silver, copper, or tantalum.

6. A hydrogen-bonded memristor for simulating biological neural synapse / logic operation circuits, prepared by any one of claims 1 to 5, is characterized in that: ITO is used as the bottom electrode, Melamine crystal film is used as the active layer, and metal electrode is used as the top electrode. The three adopt a "sandwich" structure.

7. A method for simulating biological neural synapses, characterized in that: The memristor according to claim 6 exhibits a decrease in resistance and an increase in current when receiving pulse voltage stimulation, forming a spike current, which then decays to near 0 over time, thereby simulating synaptic plasticity behavior.

8. An application method in a logic operation circuit, characterized in that: According to claim 6, the memristor undergoes a sudden change in resistance at the turn-on voltage under AC voltage scanning, defining the high-resistance state as logic "0" and the low-resistance state as logic "1", thereby realizing binary logic operations.

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