Semiconductor device with self-cleaning function and cleaning method

Abstract

The application relates to the technical field of wafer processing equipment, in particular to a semiconductor equipment with a self-cleaning function and a cleaning method, which comprises a plasma source, a main vacuum pipeline, a main cleaning pipeline, a mode switching valve group and a control system; the main vacuum pipeline is communicated with a process chamber and is used for guiding process gas and by-products from the process chamber in a normal process mode, and an angle valve is arranged on the main vacuum pipeline; one end of the main cleaning pipeline is connected with the plasma source, and the other end of the main cleaning pipeline is configured to be capable of guiding the plasma into the angle valve; the mode switching valve group is arranged on the main cleaning pipeline and is arranged between the angle valve and the plasma source; the control system is in communication connection with the plasma source and the mode switching valve group; the application avoids equipment downtime, component damage and pollution introduction caused by traditional offline cleaning, and significantly improves equipment utilization and production capacity.

Description

Technical Field

[0001] This invention relates to the field of wafer processing equipment technology, and in particular to a semiconductor device and cleaning method with self-cleaning function. Background Technology

[0002] During the operation of semiconductor equipment, byproducts generated by process gases can enter the downstream vacuum system and easily accumulate in the low-temperature angle valve area. This can lead to numerous problems such as airflow blockage, valve malfunction, particulate contamination, and frequent equipment downtime for maintenance. Currently used traditional methods such as mechanical cleaning, chemical cleaning, or high-temperature treatment all require production interruption and are offline operations, which are not only inefficient but also damage components or introduce contamination. Summary of the Invention

[0003] The present invention provides a semiconductor device and cleaning method with self-cleaning function. The purpose is not only to avoid equipment downtime, component damage and contamination caused by traditional offline cleaning, but also to significantly improve equipment utilization and production capacity. Its precise plasma chemical action can also achieve selective cleaning, protect valve components, fundamentally solve the problems of airflow blockage, operation failure and particulate contamination of angle valves, and improve the stability and reliability of semiconductor manufacturing process.

[0004] To achieve the above objectives, the present invention provides a semiconductor device with a self-cleaning function, comprising:

[0005] Plasma source, used to generate plasma for cleaning purposes;

[0006] The main vacuum line is connected to the process chamber and is used to guide process gas and by-products from the process chamber in normal process mode. An angle valve is installed on the main vacuum line.

[0007] The main cleaning line has one end connected to the plasma source and the other end configured to guide the plasma into the angle valve;

[0008] A mode switching valve assembly is installed on the main cleaning pipeline and between the angle valve and the plasma source, as well as on the main vacuum pipeline, for switching between the normal process mode and the cleaning mode;

[0009] The control system is communicatively connected to the plasma source and the mode switching valve group, and is used to control the opening and closing state of the mode switching valve group and the start and stop of the plasma source.

[0010] Optionally, the plasma source includes an oxygen-based plasma source and a fluorine-based plasma source. The oxygen-based plasma source is used to generate oxygen-based plasma for decomposing organic byproducts into volatile small molecules, and the fluorine-based plasma source is used to generate fluorine-based plasma for decomposing inorganic byproducts into volatile small molecules.

[0011] Optionally, a molecular pump is installed on the main vacuum line, and the molecular pump is located between the process chamber and the angle valve; a dry pump is installed on the main vacuum line, and the angle valve is located between the molecular pump and the dry pump.

[0012] Optionally, the mode switching valve assembly includes a first isolator, a second isolator, and a cleaning passage valve;

[0013] The first isolation element and the second isolation element are disposed on the main vacuum pipeline, and the first isolation element is disposed between the angle valve and the molecular pump, and the second isolation element is disposed between the angle valve and the dry pump;

[0014] The cleaning passage valve is located on the main cleaning pipeline and between the plasma source and the angle valve;

[0015] In the normal process mode, the first isolation component and the second isolation component are open, and the cleaning passage valve is closed. In the cleaning mode, the first isolation component is closed, and the cleaning passage valve and the second isolation component are open.

[0016] Optionally, the first isolation member and the second isolation member have the same structure, and the first isolation member includes an isolation part, a blocking part and a driving part;

[0017] The isolation part is radially disposed through the main vacuum pipeline to separate the inner cavity of the main vacuum pipeline. The isolation part is provided with a through hole along the axial direction of the main vacuum pipeline. The through hole is located in the inner cavity of the main vacuum pipeline. The isolation part is recessed with a movable groove along the axial direction from one end to the other end. The movable groove communicates with the through hole.

[0018] The sealing part is movably disposed in the movable groove, and one end of the sealing part located outside the movable groove is connected to the driving part. The driving part drives the sealing part to move axially within the movable groove to open the through hole in the normal process mode and close the through hole in the cleaning mode.

[0019] Optionally, a scraping part is provided around the sidewall of the movable groove in its circumference. The scraping part is movably sleeved outside the sealing part, and the upper and lower parts of the scraping part are inclined in the axial section of the movable groove. The top of the inclined structure is connected to the sidewall of the movable groove, and the bottom is in contact with the surface of the sealing part, so as to scrape off the by-products deposited on the surface of the sealing part when the sealing part moves.

[0020] Optionally, a heating device is provided inside the sealing part to remove byproducts deposited on the surface of the sealing part by heating the sealing part.

[0021] Optionally, a secondary cleaning pipeline is connected to the plasma source, and the free end of the secondary cleaning pipeline is connected to the movable groove in the second isolation member, so as to remove the by-products deposited on the surface of the sealing part by introducing plasma into the movable groove.

[0022] Optionally, the semiconductor device with self-cleaning function further includes sensors that are communicatively connected to the control system, the plasma source, the cleaning passage valve, and the drive unit. The number of sensors is set to several, and the sensors are distributed in the angle valve and the movable groove to collect by-product signals deposited in the angle valve and the sealing part. The control system controls the opening, closing, starting, and stopping of the plasma source, the cleaning passage valve, and the drive unit according to the deposited by-product signals.

[0023] To achieve the above objectives, the present invention provides a cleaning method for a semiconductor device with a self-cleaning function, the cleaning method comprising the following steps:

[0024] S1: Under normal process mode, process gases and by-products are removed through the main vacuum line;

[0025] S2: When the preset cleaning triggering conditions are met, the control system controls the cleaning device to switch from the normal process mode to the cleaning mode;

[0026] S3: In cleaning mode, the plasma generated by the plasma source is guided to the angle valve area through the main cleaning pipeline to decompose the by-products deposited in the area;

[0027] S4: After cleaning is completed, the control system controls the cleaning device to switch from the cleaning mode to the normal process mode.

[0028] Optionally, the step of switching from the normal process mode to the cleaning mode includes:

[0029] S5: Stop the main process;

[0030] S6: Close the first isolator to separate the process chamber from the angle valve;

[0031] S7: Open the cleaning passage valve and the second isolation component so that the plasma generated by the plasma source enters the angle valve through the main cleaning pipeline to decompose the by-products, and extract the decomposed products and plasma through the dry pump.

[0032] The beneficial effects of this invention are as follows:

[0033] This invention adds an independent plasma cleaning system (main / auxiliary cleaning pipelines) and an intelligent switching valve assembly, enabling the equipment to switch from "normal process mode" to "cleaning mode" without interrupting production. In cleaning mode, specific plasma is directly guided to the angle valve, decomposing solid deposition byproducts in situ into volatile small molecules, which are then removed by the vacuum system, thus achieving efficient online, in-situ, and automated cleaning. This method not only avoids equipment downtime, component damage, and contamination introduction caused by traditional offline cleaning, significantly improving equipment utilization and production capacity, but its precise plasma chemical action also enables selective cleaning, protecting valve components and fundamentally solving the problems of angle valve airflow blockage, operational malfunctions, and particulate contamination, thereby improving the stability and reliability of the semiconductor manufacturing process. Attached Figure Description

[0034] Figure 1 This is a system for a semiconductor device in an embodiment of the present invention;

[0035] Figure 2 For the present invention Figure 1 A schematic diagram of the structure of the first isolation member in the embodiment;

[0036] Figure 3 For the present invention Figure 2 Enlarged structural diagram of position A in the embodiment;

[0037] Figure 4 This is a flowchart of a cleaning method for a semiconductor device with self-cleaning function in an embodiment of the present invention;

[0038] Figure 5 This is a flowchart of the cleaning method for switching from normal process mode to cleaning mode in an embodiment of the present invention.

[0039] Explanation of reference numerals in the attached figures:

[0040] 1. Process chamber; 2. Molecular pump; 3. First isolator; 31. Isolation section; 32. Through hole; 33. Movable groove; 34. Sealing section; 35. Drive section; 4. Angle valve; 5. Second isolator; 6. Dry pump; 7. Plasma source; 8. Cleaning passage valve; 9. Main vacuum line; 10. Main cleaning line; 11. Scraping section. Detailed Implementation

[0041] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions in the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without inventive effort are within the scope of protection of this invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed following the word and its equivalents, but do not exclude other elements or objects.

[0042] To address the problems existing in the prior art, embodiments of the present invention provide a cleaning device for an angle valve 4 in a semiconductor device, such as... Figure 1 As shown, the cleaning device for the semiconductor equipment angle valve 4 includes a plasma source 7, a main vacuum line 9, a main cleaning line 10, a mode switching valve group, and a control system.

[0043] In one embodiment, the plasma source 7 is used to generate plasma for cleaning; specifically, the plasma source 7 includes an oxygen-based plasma source and a fluorine-based plasma source. The oxygen-based plasma source 7 is used to generate oxygen-based plasma to decompose organic byproducts into volatile small molecules, and the fluorine-based plasma source 7 is used to generate fluorine-based plasma to decompose inorganic byproducts into volatile small molecules. This embodiment provides a comprehensive and efficient cleaning solution for complex, mixed-component byproducts generated in semiconductor processes. Specifically, byproducts generated by semiconductor equipment (such as etching, chemical vapor deposition, and other chambers) typically include both organic matter (such as incompletely reacted photoresist and polymers) and inorganic matter (such as metal halides and silicides). Oxygen-based plasma is rich in reactive oxygen species and can efficiently oxidize and decompose organic byproducts into volatile small molecules such as CO2 and H2O; while fluorine-based plasma utilizes its strong fluorination capability to convert inorganic byproducts into volatile fluorides such as SiF4 and metal fluorides. Through this combined plasma chemical action of "oxidation and fluorination", the device can simultaneously or alternately treat deposits of multiple chemical components, achieving thorough removal of complex scale on the surface of key components such as the angle valve 4, avoiding the problem of incomplete treatment by a single type of plasma, thereby significantly improving cleaning efficiency, reducing cleaning frequency, and ensuring the long-term stable operation of valves and vacuum systems.

[0044] In one embodiment, such as Figure 1As shown, the main vacuum pipeline 9 is connected to the process chamber 1 and is used to guide the process gas and by-products from the process chamber 1 in normal process mode. An angle valve 4 is installed on the main vacuum pipeline 9. This embodiment constructs a highly efficient and controllable vacuum transport and isolation system. Specifically, the main vacuum pipeline 9, as the core channel, can continuously and stably guide the reaction gas and by-products generated in the process chamber 1 to the downstream vacuum pump group (such as molecular pump 2 and dry pump 6) for discharge in normal process mode, ensuring continuous process operation. The angle valve 4, installed at a key location on the pipeline, has the core function of quickly and reliably isolating upstream and downstream areas when needed (e.g., during equipment maintenance, process switching, or switching to "cleaning mode" as described in this invention). In the cleaning scenario of this invention, it is through the angle valve 4 and its upstream and downstream first isolation member 3 and second isolation member 5 that the local area of ​​the angle valve 4 to be cleaned can be "isolated" without affecting the vacuum state of the process chamber 1, forming an independent and controllable cleaning environment. This enables online and in-situ plasma cleaning, avoiding the cumbersome operation of depressurizing and disassembling the entire vacuum pipeline or even the entire system required by traditional methods, and greatly improving maintenance efficiency and equipment utilization.

[0045] In one embodiment, such as Figure 1 As shown, one end of the main cleaning pipeline 10 is connected to the plasma source 7, and the other end is configured to guide the plasma into the angle valve 4. The mode switching valve assembly is located on the main cleaning pipeline 10 and between the angle valve 4 and the plasma source 7, as well as on the main vacuum pipeline 9, for switching between the normal process mode and the cleaning mode. This embodiment constructs a plasma delivery and switching system that runs parallel to and is independent of the main vacuum pipeline 9, which is the core structure for realizing online in-situ cleaning. Specifically, the main cleaning pipeline 10 is specifically used to deliver active plasma for cleaning from the plasma source 7 to the angle valve 4, and its end is precisely configured to directly guide the plasma to the deposition area inside the angle valve 4, ensuring the efficiency and specificity of the cleaning action. The arrangement of the mode switching valve assembly is the key mechanical and logical control node for realizing "mode switching". It can physically isolate the main process airflow path and connect the cleaning airflow path without destroying the integrity of the main vacuum system by controlling the opening and closing combination of relevant valves, thereby realizing a rapid, reliable, and automated switch from "normal process mode" to "cleaning mode". This design makes the cleaning process an independent, modular operation that can be triggered on demand, without the need to disassemble pipes or depressurize process chamber 1, thereby minimizing equipment downtime and ensuring the controllability and safety of the cleaning process.

[0046] In one embodiment, the control system is communicatively connected to the plasma source 7 and the mode switching valve group, and is used to control the opening and closing state of the mode switching valve group and the start and stop of the plasma source 7. By introducing an integrated intelligent control system, the entire cleaning process of the angle valve 4 is automated, precise, and intelligent. This control system, acting as a command center, establishes a communication connection with the plasma source 7 and the mode switching valve group, and can coordinate the timing of the actions of all key components based on preset programs or real-time feedback of deposit signals from sensors. When cleaning is triggered, it can automatically command the valve group to switch precisely in a predetermined sequence to isolate the process chamber 1 and establish a cleaning airflow path, while simultaneously precisely controlling the start, operation, and stop of the plasma source 7. This centralized control ensures reliable and accurate timing of the process from normal process mode to cleaning mode (and reverse switching), avoiding errors, delays, or inconsistencies that may be caused by manual operation, thereby greatly improving cleaning efficiency, system stability, and safety, and is key to achieving predictive maintenance of equipment and reducing reliance on operator skills.

[0047] In one embodiment, the control system can be a programmable logic controller (PLC) or a central control unit based on an industrial PC, communicating with the plasma source 7 and the mode switching valve group via an industrial communication bus or I / O module. The system has built-in automatic control logic and preset timing, enabling it to automatically determine and trigger the cleaning mode based on process status, accumulated time, or real-time deposit signals from sensors (detailed below). Upon triggering, it precisely controls the opening and closing status and sequence of each valve in the mode switching valve group to safely isolate the process chamber 1 and establish a cleaning path, while simultaneously controlling the start / stop, power, and gas ratio of the plasma source 7 (e.g., switching between oxygen-based and fluorine-based plasma). Furthermore, the control system can integrate a human-machine interface for status monitoring, parameter setting, and alarm management, and communicate with the upper-level manufacturing execution system to achieve fully automated, traceable, and intelligent management of the cleaning process.

[0048] In one embodiment, such as Figure 1As shown, a molecular pump 2 is installed on the main vacuum line 9, located between the process chamber 1 and the angle valve 4; a dry pump 6 is also installed on the main vacuum line 9, with the angle valve 4 located between the molecular pump 2 and the dry pump 6. In this embodiment, the molecular pump 2 (high vacuum pump) is located upstream of the process chamber 1, primarily responsible for rapidly establishing and maintaining the high vacuum environment required for the process in normal process mode, and effectively removing most of the process gases; while the dry pump 6 (backup pump / rough pump) is located further downstream, responsible for providing a pre-vacuum for the molecular pump 2 and handling the exhaust gases. The angle valve 4 is positioned between the molecular pump 2 and the dry pump 6, placing it at a critical node with a relatively intermediate pressure. This arrangement allows the dry pump 6 to stably remove volatile byproducts generated from the angle valve 4 region after plasma decomposition during online cleaning, while the molecular pump 2 can be effectively isolated by the upstream first isolator 3, thus protecting the precision and expensive high vacuum pump components from particle or chemical contamination that may occur during cleaning, ensuring the long-term reliability and economy of the entire vacuum system in both modes.

[0049] In one embodiment, such as Figure 1 As shown, the mode switching valve assembly includes a first isolator 3, a second isolator 5, and a cleaning passage valve 8; the first isolator 3 and the second isolator 5 are disposed on the main vacuum line 9, and the first isolator 3 is disposed between the angle valve 4 and the molecular pump 2, and the second isolator 5 is disposed between the angle valve 4 and the dry pump 6; the cleaning passage valve 8 is disposed on the main cleaning line 10 and between the plasma source 7 and the angle valve 4; wherein, in the normal process mode, the first isolator 3 and the second isolator 5 are open, and the cleaning passage valve 8 is closed; in the cleaning mode, the first isolator 3 is closed, and the cleaning passage valve 8 and the second isolator 5 are open.

[0050] This embodiment achieves safe, reliable, and physically isolated switching between normal process and online cleaning modes through the ingenious layout and coordinated control logic of three valves (first isolator 3, second isolator 5, and cleaning passage valve 8). In normal process mode, the open first isolator 3 and second isolator 5 ensure that process gases and byproducts can be smoothly drawn away through the main vacuum pipeline 9 (via molecular pump 2, angle valve 4, and dry pump 6), while the closed cleaning passage valve 8 completely blocks the interference of plasma source 7 to the main process, ensuring the purity and stability of the process. When cleaning is required, closing the first isolator 3 immediately and completely isolates the process chamber 1 from the area of ​​angle valve 4 to be cleaned, preventing back-contamination of process chamber 1 by the cleaning process (such as plasma and byproducts); at the same time, opening the cleaning passage valve 8 and the second isolator 5 creates an independent and closed cleaning gas flow path from plasma source 7, through the main cleaning pipeline 10, into angle valve 4, and finally discharged through dry pump 6. This "one-off, two-on" switching strategy ensures that the cleaning process can be carried out efficiently and directionally in a local space completely isolated from the main process. It achieves in-situ online cleaning of the angle valve 4 while maximizing the safety of the upstream process chamber 1 and the downstream molecular pump 2. It is the core mechanism for achieving automated, non-invasive maintenance.

[0051] In one embodiment, such as Figure 2 As shown, the first isolation member 3 and the second isolation member 5 have the same structure. The first isolation member 3 includes an isolation part 31, a blocking part 34 and a driving part 35.

[0052] In one embodiment, such as Figure 2 As shown, the isolation part 31 is radially disposed through the main vacuum pipeline 9 to separate the inner cavity of the main vacuum pipeline 9. The isolation part 31 is provided with a through hole 32 along the axial direction of the main vacuum pipeline 9. The through hole 32 is located in the inner cavity of the main vacuum pipeline 9. The isolation part 31 is recessed with a movable groove 33 along the axial direction from one end to the other end. The movable groove 33 communicates with the through hole 32. The sealing part 34 is movably disposed in the movable groove 33, and one end located outside the movable groove 33 is connected to the driving part 35. The driving part 35 drives the sealing part 34 to move along its axial direction in the movable groove 33 to open the through hole 32 in the normal process mode and close the through hole 32 in the cleaning mode.

[0053] This embodiment designs a compact, precise, and reliable movable vacuum isolation valve. Specifically, the isolation part 31 radially penetrates the main vacuum pipeline 9, effectively separating the pipeline cavity. Its axial through-hole 32 is the core channel for airflow under normal process conditions. The axial movement design of the sealing part 34 within the movable groove 33 allows it to be precisely controlled by the drive part 35 like a "piston," achieving switching between "open" and "closed" states. In normal process mode, the sealing part 34 retracts, and the through-hole 32 is fully open, ensuring airflow passes through with minimal resistance. In cleaning mode, the drive part 35 pushes the sealing part 34 out, causing its end (not shown in the figure, but can be understood as the sealing surface) to completely block the through-hole 32, thereby forming a reliable physical barrier on the main vacuum pipeline 9, completely isolating the upstream and downstream, and creating a closed and safe operating environment for local cleaning of the angle valve 4 area. This integrated design of "movable groove 33 plus sealing part 34" integrates the valve's on / off function inside the pipeline. It has a simple structure and direct action, avoiding complex transmission mechanisms. While ensuring high vacuum sealing, it also improves the long-term reliability of the valve in harsh semiconductor process environments.

[0054] In one embodiment, the drive unit 35 can be a high-precision, high-reliability linear drive device such as a linear motor, servo motor with lead screw or ball screw, pneumatic or hydraulic actuator, etc. It communicates with the control system (such as a PLC), receives control commands, and precisely converts electrical energy or fluid force into mechanical energy for linear motion to drive the sealing part 34 to reciprocate along its axial direction within the movable groove 33. Through a built-in linear encoder forming a closed-loop feedback with the control system, precise control of the extension or retraction position, speed, and force of the sealing part 34 can be achieved, ensuring that the switching action between the "open through hole 32" and "closed through hole 32" states is fast, smooth, and accurate. This high-precision drive design ensures absolute reliability of the isolation action in a vacuum environment and is a key actuator for achieving rapid response and stable sealing of the isolation component.

[0055] In one embodiment, the cavity structure of the sealing part 34 and the movable groove 33 can be a precision-fitted cylindrical or stepped cylindrical structure to achieve high vacuum sealing and reliable guidance. Specifically, the inner wall of the movable groove 33 is precision-machined to ensure a minimal and uniform fit clearance with the outer surface of the sealing part 34 along its entire axial length. To meet the requirements of high vacuum and high temperature process environments, the outer surface of the sealing part 34 can be coated with a corrosion-resistant, low-outgas coating (such as nickel plating or aluminum nitride), while the inner wall of the movable groove 33 may also be hardened or inlaid with a self-lubricating bushing (such as graphite or PEEK material) to reduce friction, prevent cold welding, and ensure that the sealing performance is maintained after repeated reciprocating motions. In cleaning mode, when the drive unit 35 pushes the sealing unit 34 to extend and close the through hole 32, the end face of the sealing unit 34 (usually designed as a conical or flat surface) will fit tightly against the valve seat around the through hole 32 on the isolation unit 31, forming a reliable vacuum seal through metal-to-metal sealing or by embedding an elastic sealing ring (such as fluororubber or perfluoroether rubber). This structural design ensures unobstructed airflow in normal process mode and achieves efficient isolation in cleaning mode, which is the key mechanical basis for the reliable functioning of the isolation component.

[0056] In one embodiment, such as Figure 3 As shown, a scraping part 11 is circumferentially arranged on the sidewall of the movable groove 33. The scraping part 11 is movably sleeved outside the sealing part 34, and both the upper and lower parts of the scraping part 11 are inclined in the axial section of the movable groove 33. The top of the inclined structure is connected to the sidewall of the movable groove 33, and the bottom is in contact with the surface of the sealing part 34, so as to scrape off the by-products deposited on the surface of the sealing part 34 when the sealing part 34 moves. This embodiment cleverly designs a mechanical structure with self-cleaning function integrated inside the first isolation member 3 and the second isolation member 5. Specifically, this "scraping part 11" is like a movable scraping ring surrounding the sealing part 34, and the design of its inclined upper and lower parts is key. When the driving unit 35 drives the sealing part 34 to reciprocate in the movable groove 33 (such as retracting from the extended position in the cleaning mode), the surface of the sealing part 34 will move relative to the scraping part 11. Because the scraping part 11 is fixedly connected to the side wall of the movable groove 33, and its inclined bottom edge is in close contact with the surface of the sealing part 34, this relative movement makes the edge of the scraping part 11 act like a scraper, automatically scraping away deposits (such as process by-products) attached to the surface of the sealing part 34. This design effectively solves the problem that after the sealing part 34 moves in the airflow containing deposits for a long time, the surface deposits may cause poor sealing, movement stagnation, or particulate contamination. This ensures the reliability and stability of the isolation element in long-term operation, reduces the maintenance frequency, and is an important innovation for achieving long-life and maintenance-free operation of valves.

[0057] In one embodiment, the scraping part 11 can be an annular scraper made of a flexible, wear-resistant, and chemically inert material (e.g., polyimide, reinforced PTFE, or a specific grade of PEEK). It is generally C-shaped with an opening or a complete ring for easy assembly and wrapping around the sealing part 34. Its key inclined structure (both the upper and lower parts are inclined in axial section) can be designed with a thin, flexible edge to ensure that its "blade" closely conforms to the outer cylindrical surface of the sealing part 34 in both static and dynamic states, forming effective scraping contact. The scraping part 11 can be fixedly installed in the annular groove on the side wall of the movable groove 33 by means of snap-fit, interference fit, or fasteners, ensuring that it is fully constrained axially and has a certain elastic deformation capacity only in the radial direction to accommodate the small tolerances or thermal deformation of the sealing part 34. This structural design enables the sealing part 34 to continuously and gently scrape away particulate deposits adhering to its surface, like a "windshield wiper," each time the sealing part 34 moves axially. This effectively prevents jamming, keeps the sealing surface clean, and extends the maintenance cycle of the component.

[0058] In one embodiment, a heating device is provided within the sealing portion 34 to remove byproducts deposited on the surface of the sealing portion 34 by heating the sealing portion 34. This embodiment provides the sealing portion 34 with an active, in-situ, and non-mechanical contact cleaning capability. Specifically, a heating device is integrated inside the sealing portion 34. When byproducts are deposited on the surface of the sealing portion 34 due to prolonged exposure to process gas flow, the control system can activate the heating device to rapidly heat the entire sealing portion 34 or its surface area. This localized heating effectively promotes the thermal decomposition, sublimation, or thermochemical reaction of the deposits adhering to the surface with the surrounding residual gas, thereby transforming them from a solid state to a gaseous state or an easily detachable form, which is then removed by the vacuum system. Compared with purely mechanical scraping, this thermal cleaning method can more thoroughly remove stubborn deposits, avoid particulate contamination that may be generated by scraping, and eliminates the need for additional moving parts, reducing mechanical complexity and the risk of failure. It is particularly suitable for handling highly adhesive or solidified deposits that are difficult to remove mechanically, enabling more efficient and flexible maintenance of the key moving part 34 of the sealing section, thus improving the long-term operational reliability and service life of the isolation valve.

[0059] In one embodiment, the heating device can be an embedded resistance heating coil, a thick-film heating circuit, or a wrap-around flexible heating sleeve. Specifically, the device can be precisely integrated inside the metal structure of the sealing part 34. For example, a high-temperature resistant insulated wire (such as a nickel-chromium alloy wire) can be embedded in a dedicated groove inside the sealing part 34 via a spiral or paperclip path, and then encapsulated and fixed with a high-temperature resistant, thermally conductive insulating material (such as alumina ceramic filler) to ensure efficient and uniform heat conduction to the entire outer surface of the sealing part 34. The leads of the heating device are led out through the shaft or sidewall sealing interface of the sealing part 34 and connected to an external temperature control power supply. By controlling the heating power and time, the surface of the sealing part 34 can be precisely heated to a preset target temperature (e.g., 200°C to 600°C, depending on the nature of the deposit), causing the organic or inorganic byproducts attached to the surface to undergo pyrolysis, oxidation, or sublimation, thereby achieving cleaning. This built-in design ensures uniform and efficient heating while avoiding the thermal impact of external heat sources on surrounding vacuum lines and components, which is key to achieving in-situ, active, and controllable thermal cleaning of the sealing section 34.

[0060] In one embodiment, a secondary cleaning conduit is connected to the plasma source 7. The free end of the secondary cleaning conduit is connected to the movable groove 33 within the second isolator 5, so as to remove byproducts deposited on the surface of the sealing portion 34 by introducing plasma into the movable groove 33. This embodiment expands the scope of plasma cleaning, realizing online and in-situ cleaning of the key moving parts of the first and second isolators 3 and 5, thereby improving the long-term reliability of the entire isolation system. Specifically, the secondary cleaning conduit is led out from the plasma source 7 and its free end is precisely connected to the movable groove 33 of the second isolator 5, forming a dedicated branch cleaning channel. When byproducts are deposited on the surface of the sealing portion 34 in the movable groove 33 due to long-term exposure to process gas flow, the control system can activate this cleaning mode to directly introduce plasma (such as oxygen- or fluorine-based) into the enclosed space of the movable groove 33 through the secondary cleaning conduit. The reactive species in the plasma (such as oxygen atoms and fluorine radicals) can chemically react with deposits adhering to the surface of the sealing part 34 and the inner wall of the moving groove 33, decomposing them into volatile small molecules, which are then removed by the downstream vacuum pump. This design cleverly utilizes the same plasma source 7 to provide an efficient and contactless chemical cleaning method for areas inside the second isolation element 5 that are difficult to clean mechanically without adding additional complex mechanisms. This effectively prevents sealing failure, movement jamming, or particle shedding caused by surface contamination of the sealing part 34, ensuring that the isolation valve can operate continuously, stably, and reliably in the harsh semiconductor process environment.

[0061] In one embodiment, a valve is also provided on the secondary cleaning pipeline to enable independent and controllable on / off control of the branch cleaning gas path. Specifically, after installing a valve (e.g., a normally closed solenoid valve or pneumatic valve) on the secondary cleaning pipeline, the control system can independently control the opening and closing of the valve. During normal process mode or when the main cleaning pipeline 10 is being cleaned by the diagonal valve 4, this valve remains closed, ensuring complete isolation between the secondary cleaning pipeline and the main vacuum system, preventing accidental leakage or interference with the main cleaning process. When it is necessary to clean the interior of the movable slot 33 of the isolation component, the control system can, according to a program, close the cleaning passage valve 8 and ensure the isolation component is in a closed state, then precisely open this valve to directionally and controllably introduce active plasma from the plasma source 7 into the space of the movable slot 33, performing targeted cleaning of the deposits on the surface of the sealing part 34 and the inner wall of the slot. After cleaning is completed, the valve closes, and the secondary cleaning pipeline is isolated again. This design increases the flexibility, safety, and reliability of system control, prevents mutual interference between different cleaning modes, and avoids the diffusion of plasma or byproducts into the branch when not needed. It is an important structure for realizing multi-area, refined online cleaning management.

[0062] In one embodiment, the cleaning device for the angle valve 4 of a semiconductor device further includes sensors communicatively connected to the control system, the plasma source 7, the cleaning passage valve 8, and the drive unit 35. A plurality of sensors are provided, each disposed within the angle valve 4 and the movable groove 33, to collect signals of by-products deposited in the angle valve 4 and the sealing part 34. The control system controls the opening, closing, and starting / stopping of the plasma source 7, the cleaning passage valve 8, and the drive unit 35 based on the deposited by-product signals.

[0063] This embodiment utilizes multiple sensors (such as optical interferometers, quartz crystal microbalances, pressure sensors, or spectral analysis probes) placed at key locations where sediment easily accumulates (the inner wall of the angle valve 4 and the movable groove 33 of the isolator). The device can monitor the thickness, composition, or flow resistance changes of by-product deposits in these areas in real time and in situ. The collected "sediment signals" are transmitted to the control system in real time. By analyzing these signals, the control system can not only accurately determine the cleaning trigger timing (e.g., when the sediment thickness reaches a preset threshold), avoiding premature or delayed cleaning, but also intelligently determine whether the sediment is primarily organic or inorganic based on signal characteristics (e.g., differences in reflectance spectra). This allows for automatic decision-making and control of the activation of the corresponding oxygen- or fluorine-based plasma source 7, and coordinated control of the cleaning passage valve 8, drive unit 35, and other actuators, achieving fully automated, on-demand cleaning from "sensing to judgment to execution." This fundamentally upgrades the cleaning mode from fixed-cycle maintenance to intelligent maintenance based on actual conditions, greatly improving cleaning efficiency, reducing unnecessary downtime and plasma consumption, and effectively preventing valve failures or particulate contamination caused by excessive sediment, thus enhancing the overall utilization rate of the equipment and process stability.

[0064] To address the problems existing in the prior art, embodiments of the present invention provide a cleaning method for the cleaning device for the angle valve 4 of a semiconductor device, as described above. Figure 4 As shown, the cleaning method includes the following steps: S1: In normal process mode, process gas and by-products are extracted through the main vacuum pipeline 9; S2: When the preset cleaning triggering conditions are met, the control system controls the cleaning device to switch from normal process mode to cleaning mode; S3: In cleaning mode, plasma generated by plasma source 7 is guided to the angle valve 4 area through the main cleaning pipeline 10 to decompose the by-products deposited in the area; S4: After cleaning is completed, the control system controls the cleaning device to switch from the cleaning mode to the normal process mode.

[0065] The method in this embodiment is based on the "normal process mode" to ensure continuous equipment production. Simultaneously, through preset intelligent triggering conditions (such as time accumulation or sensor detection of excessive deposits), the system can automatically and seamlessly switch to "cleaning mode." In this mode, without disassembling any components, dedicated plasma is precisely guided to the deposition area of ​​angle valve 4, decomposing solid byproducts in situ into volatile gases which are then extracted. After completion, the system can automatically switch back to the process mode. This process transforms traditional passive maintenance, which requires shutdown and offline operation, into an automatically triggered active cleaning process integrated into the normal operating cycle of the equipment. This minimizes unplanned downtime, improves the overall utilization rate of the equipment, and fundamentally prevents process instability, particulate contamination, and equipment failure caused by blockage of angle valve 4, achieving a high degree of synergy between production and maintenance.

[0066] In one embodiment, such as Figure 5 As shown, the steps for switching from the normal process mode to the cleaning mode include: S5: stopping the main process; S6: closing the first isolation element 3 to separate the process chamber 1 and the angle valve 4; S7: opening the cleaning passage valve 8 and the second isolation element 5 to allow the plasma generated by the plasma source 7 to enter the angle valve 4 through the main cleaning pipeline 10 to decompose the by-products, and extracting the decomposed products and plasma through the dry pump 6.

[0067] In this embodiment, step S5, "Stop the main process," first ensures that process chamber 1 is in a stable and safe standby state before switching, avoiding interference from process gases to the cleaning process. Step S6, "Close the first isolation element 3," is a crucial step in achieving physical isolation. It immediately establishes a reliable barrier upstream of angle valve 4, completely isolating the area of ​​angle valve 4 to be cleaned from the upstream precision process chamber 1 and high-vacuum molecular pump 2, thereby effectively preventing plasma, byproducts, or particles generated during the cleaning process from back-contaminating the core process area. Next, step S7, "Open the cleaning passage valve 8 and the second isolation element 5," constructs a complete and closed local cleaning gas flow loop from plasma source 7, through the main cleaning pipeline 10, directly to the inside of angle valve 4, and finally discharged by dry pump 6. This process design is logically rigorous, with each step creating conditions for the next, ensuring that the cleaning process can be carried out efficiently in an independent and controlled local environment, while also maximizing the protection of the main process system, achieving rapid, in-situ online maintenance without the need for overall system depressurization and disassembly.

[0068] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the present invention. Furthermore, the present invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. A semiconductor device with a self-cleaning function, characterized in that, include: Plasma source, used to generate plasma for cleaning purposes; The main vacuum line is connected to the process chamber and is used to guide process gas and by-products from the process chamber in normal process mode. An angle valve, a molecular pump and a dry pump are provided on the main vacuum line. The molecular pump is located between the process chamber and the angle valve, and the angle valve is located between the molecular pump and the dry pump. The main cleaning line has one end connected to the plasma source and the other end configured to guide the plasma into the angle valve; A mode switching valve assembly is installed on the main cleaning pipeline and between the angle valve and the plasma source, as well as on the main vacuum pipeline, for switching between the normal process mode and the cleaning mode; The control system is communicatively connected to the plasma source and the mode switching valve group, and is used to control the opening and closing state of the mode switching valve group and the start and stop of the plasma source. The mode switching valve assembly includes a first isolator, a second isolator, and a cleaning passage valve. The first isolator and the second isolator are located on the main vacuum pipeline, with the first isolator positioned between the angle valve and the molecular pump, and the second isolator positioned between the angle valve and the dry pump. The cleaning passage valve is located on the main cleaning pipeline and between the plasma source and the angle valve. In the normal process mode, the first isolator and the second isolator are open, and the cleaning passage valve is closed. In the cleaning mode, the first isolator is closed, and the cleaning passage valve and the second isolator are open.

2. The semiconductor device with self-cleaning function according to claim 1, characterized in that, The plasma source includes an oxygen-based plasma source and a fluorine-based plasma source. The oxygen-based plasma source is used to generate oxygen-based plasma to decompose organic byproducts into volatile small molecules, and the fluorine-based plasma source is used to generate fluorine-based plasma to decompose inorganic byproducts into volatile small molecules.

3. The semiconductor device with self-cleaning function according to claim 1, characterized in that, The first isolation member and the second isolation member have the same structure. The first isolation member includes an isolation part, a blocking part and a driving part. The isolation part is radially disposed through the main vacuum pipeline to separate the inner cavity of the main vacuum pipeline. The isolation part is provided with a through hole along the axial direction of the main vacuum pipeline. The through hole is located in the inner cavity of the main vacuum pipeline. The isolation part is recessed with a movable groove along the axial direction from one end to the other end. The movable groove communicates with the through hole. The sealing part is movably disposed in the movable groove, and one end of the sealing part located outside the movable groove is connected to the driving part. The driving part drives the sealing part to move axially within the movable groove to open the through hole in the normal process mode and close the through hole in the cleaning mode.

4. The semiconductor device with self-cleaning function according to claim 3, characterized in that, The movable groove has a scraping part circumferentially arranged on its side wall. The scraping part is movably sleeved outside the sealing part. The upper and lower parts of the scraping part are inclined in the axial section of the movable groove. The top of the inclined structure is connected to the side wall of the movable groove, and the bottom is in contact with the surface of the sealing part, so as to scrape off the by-products deposited on the surface of the sealing part when the sealing part moves.

5. The semiconductor device with self-cleaning function according to claim 3, characterized in that, The sealing part is provided with a heating device to remove byproducts deposited on the surface of the sealing part by heating the sealing part.

6. The semiconductor device with self-cleaning function according to claim 3, characterized in that, A secondary cleaning pipeline is connected to the plasma source, and the free end of the secondary cleaning pipeline is connected to the movable groove in the second isolation member, so as to remove the by-products deposited on the surface of the sealing part by introducing plasma into the movable groove.

7. The semiconductor device with self-cleaning function according to claim 3, characterized in that, It also includes sensors that are communicatively connected to the control system, the plasma source, the cleaning passage valve, and the drive unit. Several sensors are provided, and these sensors are distributed in the angle valve and the movable groove to collect signals of by-products deposited in the angle valve and the sealing part. The control system controls the opening, closing, starting, and stopping of the plasma source, the cleaning passage valve, and the drive unit based on the signals of the deposited by-products.

8. A cleaning method for a semiconductor device with self-cleaning function as described in any one of claims 1 to 7, characterized in that, The cleaning method includes the following steps: S1: Under normal process mode, process gases and by-products are removed through the main vacuum line; S2: When the preset cleaning triggering conditions are met, the control system controls the cleaning device to switch from the normal process mode to the cleaning mode; S3: In cleaning mode, the plasma generated by the plasma source is guided to the angle valve area through the main cleaning pipeline to decompose the by-products deposited in the area; S4: After cleaning is completed, the control system controls the cleaning device to switch from the cleaning mode to the normal process mode.

9. The cleaning method for a semiconductor device with self-cleaning function according to claim 8, characterized in that, The steps for switching from the normal process mode to the cleaning mode include: S5: Stop the main process; S6: Close the first isolator to separate the process chamber from the angle valve; S7: Open the cleaning passage valve and the second isolation component so that the plasma generated by the plasma source enters the angle valve through the main cleaning pipeline to decompose the by-products, and extract the decomposed products and plasma through the dry pump.

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