A corner valve structure for a semiconductor device and a plasma processing apparatus

Abstract

The application relates to the technical field of wafer processing equipment, in particular to a corner valve structure for semiconductor equipment and a plasma processing equipment, which comprises an outer shell, an inner shell and a plasma source: a cooling cavity is arranged in the outer shell, first and second valve ports communicating with the cooling cavity are arranged on the outer shell, and a cooling liquid inlet pipe communicating with an external cooling liquid source and capable of conveying cooling liquid into the cooling cavity is also arranged on the outer shell; the inner shell is arranged in the cooling cavity, and the inner shell is respectively provided with a first through hole communicating with the first valve port and a second through hole communicating with the second valve port; the plasma source is arranged outside the inner shell, and an output end of the plasma source communicates with the inner shell so as to input plasma into the inner shell to remove by-products deposited in the inner shell; the plasma source and the cooling system are integrated, online removal of by-products and active control of temperature are realized.

Description

Technical Field

[0001] This invention relates to the field of wafer processing equipment technology, and more particularly to an angle valve structure for semiconductor equipment and a plasma processing device. Background Technology

[0002] During the operation of semiconductor equipment, byproducts generated by process gases can enter the downstream vacuum system and easily accumulate in the low-temperature angle valve area. This can lead to numerous problems such as airflow blockage, valve malfunction, particulate contamination, and frequent equipment downtime for maintenance. Currently used traditional methods such as mechanical cleaning, chemical cleaning, or high-temperature treatment all require production interruption and are offline operations, which are not only inefficient but also damage components or introduce contamination. Summary of the Invention

[0003] The purpose of this invention is to provide an angle valve structure for semiconductor devices and a plasma processing device, which integrates a plasma source and a cooling system to achieve online removal of byproducts and active temperature control.

[0004] To achieve the above objectives, the present invention provides an angle valve structure for semiconductor devices, comprising a housing, an inner housing, and a plasma source:

[0005] The outer casing has a cooling chamber inside, and the outer casing has a first valve port and a second valve port that communicate with the cooling chamber. The outer casing also has a coolant inlet pipe that communicates with an external coolant source and can deliver coolant into the cooling chamber, and a coolant outlet pipe that discharges coolant out of the cooling chamber.

[0006] The inner shell is disposed in the cooling chamber so that it is covered by the coolant when the coolant is introduced into the cooling chamber to achieve cooling and temperature reduction. The inner shell is provided with a first through hole communicating with the first valve port and a second through hole communicating with the second valve port so that the process gas and by-products introduced into the inner shell from the first valve port are discharged to the outside of the inner shell through the second valve port.

[0007] The plasma source is located outside the inner shell, and its output end is connected to the inner shell to input plasma into the inner shell to remove the byproducts deposited inside the inner shell.

[0008] Optionally, the plasma source is embedded inside the outer shell or located outside the outer shell, and the output end of the plasma source is connected to a guide pipe. The free end of the guide pipe extends away from the plasma source, partially passes through the cooling cavity, and finally penetrates into the inner shell. A control valve is provided on the section of the guide pipe located in the inner shell to control the delivery and disconnection of the plasma.

[0009] Optionally, a plurality of heat-conducting elements are arranged on each surface of the inner shell. The heat-conducting elements penetrate the shell wall of the inner shell and extend to the inner cavity of the inner shell and the cooling cavity at both ends, respectively, so as to directly conduct the heat on the inner shell and its inner cavity into the coolant in the cooling cavity through the heat-conducting elements.

[0010] Optionally, the heat-conducting component includes a fixed part, a movable part, a heat-conducting column part, and an elastic connector;

[0011] The fixing part is fixedly inserted into the inner shell, and at least part of the fixing part is located inside the inner cavity of the inner shell. The end of the fixing part located outside the inner cavity of the inner shell has a movable groove recessed towards the inner cavity of the inner shell.

[0012] At least a portion of the movable part is movably disposed within the movable groove, and an adjustable gap is formed between it and the side wall of the movable groove;

[0013] The elastic connector is disposed between the moving part and the movable groove, and connects the moving part and the movable groove, so that when the elastic connector extends or shortens, the size of the adjustable gap can be adjusted by the movement of the moving part within the movable groove.

[0014] Optionally, the movable part has a heat storage cavity recessed at one end within the movable groove, facing outwards from the movable groove. A heat-conducting column is fixedly inserted into the fixed part. One end of the heat-conducting column extends out of the fixed part and into the inner cavity of the inner shell, while the other end is movably disposed within the heat storage cavity. This allows heat from the inner shell and its inner cavity to be conducted into the heat storage cavity through the heat-conducting column, heating the gas inside. Under the action of the heated and expanding gas, the movable part is propelled to move within the movable groove.

[0015] Optionally, the inner cavity of the inner housing is provided with a valve core, and the top of the valve core is connected to a valve stem. The top of the valve stem passes through the top plate of the inner housing and extends into the outer housing, and is connected to a drive unit provided on the outer housing. The valve core is adapted to the first through hole so that the drive unit drives the valve stem to move the valve core along the axial direction of the inner housing, thereby controlling the opening and closing of the first through hole.

[0016] Optionally, a plurality of elastic sealing tubes are provided between the outer shell and the inner shell, with both ends of the elastic sealing tubes connected to the outer shell and the inner shell respectively, and the plurality of elastic sealing tubes are respectively covered on the outside of the first through hole, the second through hole and the valve stem for sealing the first through hole, the second through hole and the valve stem respectively.

[0017] Optionally, an equalization grid is provided on the inner sidewall of the inner shell. The equalization grid is located near the top of the inner shell and divides the inner cavity of the inner shell into an upper cavity and a lower cavity located at the bottom of the upper cavity and communicating with the first through hole and the second through hole. The equalization grid is matched with the plasma source so that the plasma generated by the plasma source moves uniformly downward in the lower cavity after passing through the equalization grid.

[0018] Optionally, the control valve, the drive unit, the external coolant source, and the plasma source are all communicatively connected to the sensor and the processor. The sensor is used to collect the by-product signal deposited in the inner housing and the temperature signal on or inside the inner housing. Based on the by-product signal deposited in the inner housing and the temperature signal on or inside the inner housing, the processor drives the plasma source to start delivering plasma to the inner housing to remove the deposited by-products, and drives the external coolant source to start delivering coolant into the cooling cavity to cool the angle valve structure of the semiconductor device.

[0019] To achieve the above objectives, the present invention also provides a plasma processing apparatus, including a process chamber, a main process pipeline, a molecular pump and a dry pump, as well as the aforementioned angle valve structure for semiconductor equipment, wherein the main process pipeline is connected to the process chamber, and the molecular pump, the angle valve structure for semiconductor equipment and the dry pump are sequentially arranged on the main process pipeline along the discharge direction of the process gas.

[0020] The beneficial effects of this invention are as follows:

[0021] This invention integrates a plasma source and a cooling system to achieve online removal of byproducts and active temperature control. Specifically, the plasma source can input plasma into the inner shell to directly decompose and remove deposited byproducts without disassembly or shutdown, greatly improving maintenance efficiency and ensuring process continuity. Simultaneously, the inner shell is located within the cooling chamber of the outer shell, and the circulating coolant provides efficient and uniform cooling, effectively suppressing the temperature rise of the valve body during plasma generation. This structure integrates the removal function with thermal management, significantly improving the long-term operational reliability and stability of the angle valve and reducing equipment maintenance needs and downtime. Attached Figure Description

[0022] Figure 1 This is a schematic diagram of the angle valve structure for semiconductor devices in an embodiment of the present invention;

[0023] Figure 2 For the present invention Figure 1 An enlarged structural diagram of position A in the embodiment;

[0024] Figure 3 For the present invention Figure 2 A schematic diagram of another embodiment of the heat-conducting component in the examples.

[0025] Explanation of reference numerals in the attached figures:

[0026] 1. Outer shell; 2. Cooling chamber; 3. First valve port; 4. Second valve port; 5. Plasma source; 6. Guide pipe; 7. Control valve; 8. Valve core; 9. Valve stem; 10. Inner shell; 11. Elastic sealing pipe; 12. Coolant inlet pipe; 13. Coolant outlet pipe; 14. Distribution grid; 15. Heat-conducting component; 151. Fixed part; 152. Moving part; 153. Adjustable gap; 154. Heat-conducting column part; 155. Elastic connector; 156. Heat storage chamber; 16. Coolant channel. Detailed Implementation

[0027] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions in the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without inventive effort are within the scope of protection of this invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed following the word and its equivalents, but do not exclude other elements or objects.

[0028] To address the problems existing in the prior art, embodiments of the present invention provide an angle valve structure for semiconductor devices, such as... Figure 1 As shown, the angle valve structure for semiconductor devices includes an outer shell 1, an inner shell 10, and a plasma source 5.

[0029] In one embodiment, such as Figure 1As shown, the outer shell 1 has a cooling chamber 2 inside, and the outer shell 1 has a first valve port 3 and a second valve port 4 communicating with the cooling chamber 2. The outer shell 1 also has a coolant inlet pipe 12 communicating with an external coolant source and capable of supplying coolant into the cooling chamber 2, and a coolant outlet pipe 13 discharging coolant out of the cooling chamber 2. The inner shell 10 is disposed inside the cooling chamber 2 so that it is covered by the coolant when the coolant is introduced into the cooling chamber 2 to achieve cooling and temperature reduction. The inner shell 10 has a first through hole communicating with the first valve port 3 and a second through hole communicating with the second valve port 4, so that process gas and by-products input into the inner shell 10 from the first valve port 3 can be discharged out of the inner shell 10 through the second valve port 4.

[0030] This embodiment constructs a highly efficient active thermal management system for the core valve body assembly. The cooling chamber 2 inside the outer shell 1 can accommodate circulating coolant, completely enclosing the inner shell 10, achieving comprehensive temperature control and effectively suppressing the deposition of low-temperature byproducts on the inner wall of the angle valve. The first valve port 3 and the second valve port 4 are connected to the cooling chamber 2, ensuring that the process gas flow path and the cooling system are structurally separated. This maintains a sealed passage for the process gas while ensuring efficient heat exchange between the coolant and the inner shell 10. Through the coordination of an external coolant source, coolant inlet pipe 12, and coolant outlet pipe 13, continuous coolant supply and circulation are achieved, enabling precise and stable regulation of the operating temperature of the inner shell 10. This solves the problems of passive byproduct accumulation due to localized low temperatures in traditional angle valves, and the need for frequent offline cleaning due to insufficient temperature control, thereby significantly improving the stability of equipment operation and the convenience of maintenance.

[0031] In one embodiment, such as Figure 1 As shown, the plasma source 5 is located outside the inner housing 10, and its output end is connected to the inner housing 10 to input plasma into the inner housing 10 to remove by-products deposited inside the inner housing 10. This embodiment introduces a highly efficient online self-cleaning capability to the core valve body assembly. The plasma source 5 is located outside the inner housing 10 and connected to its interior through its output end, allowing the plasma it generates to be directly and directionally delivered to the internal working chamber of the inner housing 10. These plasmas have high reactivity and can chemically react with process by-products adhering to the inner wall of the inner housing 10, decomposing them into volatile small molecules that can be carried away by the airflow. This method allows the removal of deposited by-products to be carried out "online," without opening or disassembling the valve body or interrupting the continuous production of the semiconductor equipment, thereby greatly improving the equipment's uptime and production efficiency, and solving the problems of downtime maintenance, low efficiency, and secondary pollution caused by traditional offline cleaning methods.

[0032] In one embodiment, the plasma source 5 generates an oxygen-based plasma or a fluorine-based plasma to decompose organic or inorganic byproducts into volatile small molecules. This configuration enables the plasma source 5 to perform targeted and efficient cleaning. By limiting the plasma generated by the plasma source 5 to oxygen-based plasmas (such as O2 plasma, commonly used to treat organic residues) or fluorine-based plasmas (such as CF4 plasma, commonly used to etch inorganic materials) with specific chemical properties, different types of process deposits can be targeted for treatment. For example, oxygen-based plasmas can effectively oxidize and decompose organic byproducts such as hydrocarbons, while fluorine-based plasmas can react with inorganic byproducts such as silicon and tungsten to generate volatile fluorides. This combination of highly reactive plasmas and the chemical reaction pathways of target byproducts ensures that solid or non-volatile substances deposited on the inner shell 10 are efficiently and thoroughly decomposed into small molecule gases (such as CO2, H2O, SiF4, etc.), which are then easily carried out of the angle valve system by the airflow. This achieves online, non-destructive precision cleaning, avoiding the risks of downtime, component damage, or secondary contamination associated with physical or chemical cleaning.

[0033] In one embodiment, such as Figure 1 As shown, the plasma source 5 is either embedded inside the housing 1 or located outside the housing 1. This provides a flexible spatial layout for the installation and integration of the plasma source 5, adapting to different equipment design and maintenance needs. When the plasma source 5 is embedded inside the housing 1, a high degree of structural integration and compactness can be achieved, reducing external connections and space occupation, and potentially enhancing the protection of the plasma transmission channel. When it is located outside the housing 1, it facilitates equipment installation, commissioning, subsequent maintenance and replacement, and also aids in heat dissipation. This optional design increases the compatibility and adaptability of this angle valve structure in different semiconductor devices, allowing designers to choose the most suitable installation method based on specific equipment layout, maintainability requirements, and cost-effectiveness factors.

[0034] In one embodiment, such as Figure 1As shown, the output end of the plasma source 5 is connected to a guide pipe 6. The free end of the guide pipe 6 extends away from the plasma source 5, partially passes through the cooling chamber 2, and finally enters the inner shell 10. A control valve 7 is installed on the section of the guide pipe 6 within the inner shell 10 to control the delivery and disconnection of the plasma. This embodiment optimizes the delivery path and control logic of the plasma from the generation end to the point of action. The guide pipe 6, as a channel connecting the plasma source 5 and the inner shell 10, with its free end entering the inner shell 10, ensures that the plasma can be accurately and directly guided to the core reaction area of ​​the deposited byproducts, improving cleaning efficiency. Furthermore, allowing the guide pipe 6 to partially pass through the cooling chamber 2 allows the coolant to simultaneously cool the guide pipe 6 during its flow, preventing unnecessary reactions or losses of the plasma due to excessively high temperatures in the guide pipe 6 during delivery, thus ensuring the activity of the plasma. In addition, a control valve 7 is installed on the guide pipe 6 section of the inner shell 10, which can accurately and instantly turn on or off the plasma supply, realizing synchronous control with the equipment process steps. It can be precisely triggered when cleaning is required, and can also avoid interference caused by continuous plasma inflow during normal process operation, thereby improving the intelligence and reliability of system operation.

[0035] In one embodiment, such as Figure 1 As shown, a plurality of heat-conducting elements 15 are arranged on each surface of the inner housing 10. The heat-conducting elements 15 penetrate the shell wall of the inner housing 10 and extend at both ends into the inner cavity of the inner housing 10 and the cooling cavity 2, respectively, so as to directly conduct heat from the inner housing 10 and its inner cavity into the coolant in the cooling cavity 2. This embodiment greatly enhances the heat transfer efficiency and uniformity between the inner housing 10 and the coolant, achieving precise and active control of the valve body's operating temperature. By evenly arranging the heat-conducting elements 15 penetrating its shell wall on each surface of the inner housing 10, multiple direct heat transfer paths are established between its inner cavity (in contact with hot process gases) and the cooling cavity 2 of the outer housing 1 (in contact with coolant). This design allows the heat generated by the inner housing 10 and its inner cavity during operation to be rapidly and directly transferred to the cooling cavity 2, which is continuously flushed by the coolant, through these high thermal conductivity heat-conducting elements 15, and efficiently carried away by the circulating coolant. This avoids excessively high local temperatures caused by heat accumulation inside the inner shell 10, and also effectively reduces the temperature of the inner wall surface in contact with the process gas. This fundamentally suppresses the problem of byproducts easily deposited inside the angle valve due to low temperature, ensuring that the valve body operates within a stable and controllable temperature range, and improving reliability and process consistency.

[0036] In one embodiment, such as Figure 2As shown, the heat-conducting component 15 is provided with a coolant channel 16. The coolant channel 16 includes a first vertical portion, a second vertical portion, and a U-shaped portion. The U-shaped portion is located inside the heat-conducting component 15, and at least a portion of the U-shaped portion is located inside the inner cavity of the inner shell 10. The first vertical portion and the second vertical portion are recessed from the bottom and top of the heat-conducting component 15 towards the middle, respectively. The first vertical portion and the second vertical portion are respectively connected to both ends of the U-shaped portion, so that the coolant enters the U-shaped portion through the first vertical portion and flows out of the U-shaped portion through the second vertical portion, so as to carry away the heat on the heat-conducting component 15 when the coolant flows.

[0037] This embodiment innovatively integrates an active liquid cooling channel into the interior of the heat conductor 15, achieving ultra-efficient removal of heat from both the heat conductor 15 itself and the interior of the inner shell 10. By providing a coolant channel 16 penetrating the interior of the heat conductor 15 and cleverly extending the main part of its U-shaped portion into the inner cavity of the inner shell 10, the circulating coolant can flow directly into the location closest to the heat source (such as process gas) within the cavity. When the coolant flows in from the first vertical section, passes through the U-shaped core of the heat conductor 15, and then flows out from the second vertical section, it directly and fully exchanges heat with the high-temperature environment of the inner cavity within the heat conductor 15, maximizing the absorption and removal of heat transferred from the inner cavity by the heat conductor 15. This design greatly enhances heat dissipation efficiency, ensuring that the heat-conducting component 15 always maintains good thermal conductivity. Moreover, through the bridging effect of the heat-conducting component 15, the heat inside the inner shell 10 can be "pumped" into the external circulating coolant more quickly, thereby achieving precise and enhanced cooling of the core working area of ​​the valve body and more effectively suppressing the deposition of by-products from the root.

[0038] In one embodiment, such as Figure 3 As shown, the heat-conducting component 15 includes a fixed part 151, a movable part 152, a heat-conducting column part 154, and an elastic connector 155.

[0039] In one embodiment, such as Figure 3 As shown, the fixing part 151 is fixedly inserted into the inner shell 10, and at least a portion of the fixing part 151 is located within the inner cavity of the inner shell 10. One end of the fixing part 151 located outside the inner cavity of the inner shell 10 has a recessed movable groove in the direction of the inner cavity of the inner shell 10. At least a portion of the moving part 152 is movably disposed within the movable groove, and an adjustable gap 153 is formed between the moving part 152 and the movable groove. The elastic connector 155 is disposed between the moving part 152 and the movable groove, and connects the moving part 152 and the movable groove, so that when the elastic connector 155 extends or shortens, the size of the adjustable gap 153 can be adjusted by the movement of the moving part 152 within the movable groove.

[0040] This embodiment is a passive heat dissipation structure that can automatically adjust according to temperature changes, achieving intelligent optimization of heat dissipation efficiency. The fixed part 151 of the heat-conducting component 15 is rigidly connected to the inner shell 10, ensuring the stability of the heat conduction path. The moving part 152, the movable groove, and the elastic connector 155 located within the fixed part 151 together constitute a movable component. The key is that when the internal cavity temperature changes, the elastic connector 155 will extend or shorten accordingly, driving the moving part 152 to move within the movable groove, thereby changing the size of the "adjustable gap 153" between the moving part 152 and the side wall of the movable groove in real time and automatically. The change in the gap size directly affects the effective cross-sectional area and heat conduction distance of the heat conduction path from the internal cavity to the coolant. This self-adjusting mechanism enables the heat-conducting component 15 to respond to the real-time heat load inside the inner shell 10: when the temperature rises and heat dissipation needs to be enhanced, the gap can be adjusted to a mode conducive to heat conduction, increasing the heat dissipation rate; when the temperature is low, it can be adjusted to a heat preservation mode to avoid over-cooling. This enables dynamic and adaptive management of the heat transfer process, allowing for more precise and intelligent maintenance of the inner shell 10's operating temperature without external control, and further suppressing byproduct deposition.

[0041] In one embodiment, the elastic connector 155 can be a helical spring, a disc spring, a bellows, an elastic rubber column, or a shape memory alloy component. Its core function is to drive the moving part 152 to move within the movable groove through its own thermal expansion, thermal contraction, or deformation under force when the temperature changes, thereby achieving adaptive changes in the size of the adjustable gap 153. Specifically, when the internal temperature of the inner shell 10 rises, heat is transferred through the heat-conducting column 154, causing the elastic connector 155 to expand and elongate due to heat, or to deform due to a phase change in the shape memory alloy, thereby pushing or pulling the moving part 152 and changing the gap state to enhance heat dissipation; when the temperature decreases, the elastic connector 155 shortens under its own elastic restoring force or cooling contraction, causing the moving part 152 to return to its original position, reducing the gap for appropriate heat preservation. This design achieves a purely mechanical temperature feedback and regulation mechanism without external power or control, and its structure is simple and reliable.

[0042] In one embodiment, such as Figure 3As shown, the movable part 152 has a heat storage cavity 156 recessed at one end within the movable groove, facing outwards from the movable groove. A heat-conducting column 154 is fixedly inserted into the fixed part 151. One end of the heat-conducting column 154 extends out of the fixed part 151 and into the inner cavity of the inner shell 10. The other end of the heat-conducting column 154 is movably disposed within the heat storage cavity 156, so that heat from the inner shell 10 and its inner cavity can be conducted into the heat storage cavity 156 through the heat-conducting column 154, heating the gas inside. Under the action of the heated and expanded gas, the movable part 152 is propelled to move within the movable groove.

[0043] This embodiment converts heat into a driving force for adjusting the heat dissipation structure, realizing a completely passive adaptive temperature control mechanism based on the principle of thermal expansion. The heat-conducting column 154 acts as a highly efficient heat conduction bridge, directly transferring heat from the inner shell 10 and its internal cavity to the heat storage cavity 156 of the moving part 152, heating the gas sealed within. The gas expands under heat, generating pressure, which directly acts on the moving part 152, pushing it to move within the movable slot, thereby changing the size of the adjustable gap 153. Its ingenuity lies in the direct closed-loop feedback between heat dissipation demand (internal cavity temperature) and heat dissipation capacity (gap size): the higher the temperature, the more heat is transferred, the more significant the gas expansion, pushing the moving part 152 to enlarge the gap and enhance heat dissipation; when the temperature decreases, the gas contracts, and with the assistance of the elastic connector 155, the gap shrinks, reducing heat dissipation. This purely mechanical conversion and feedback of thermal energy to mechanical energy achieves automatic, real-time optimization of heat dissipation efficiency without the need for external sensors, controllers, or actuators, resulting in an extremely reliable structure with low maintenance requirements.

[0044] In one embodiment, such as Figure 1As shown, a valve core 8 is provided in the inner cavity of the inner housing 10. A valve stem 9 is connected to the top of the valve core 8. The top of the valve stem 9 passes through the top plate of the inner housing 10 and extends into the outer housing 1, where it connects to a drive unit located on the outer housing 1. The valve core 8 is adapted to the first through hole, so that the drive unit drives the valve stem 9 to move the valve core 8 axially along the inner housing 10, thereby controlling the opening and closing of the first through hole. This embodiment constructs a core, highly reliable airflow control mechanism and places the execution part of the control action outside the sealed cooling environment. The valve core 8 is adapted to the first through hole (corresponding to the first valve port 3), and the axial movement realizes the precise opening and closing of the channel, which is the core function of the angle valve as a vacuum or process pipeline switch. The valve stem 9 connects the valve core 8 to the drive unit (such as a pneumatic or electric actuator) on the outer housing 1, allowing the control power to be transmitted from the outside to the inside. Specifically, the design of the valve stem 9 extending through the top plate of the inner housing 10 into the outer housing 1 allows the drive unit (motor, cylinder, etc.) to be mounted on the outer housing 1, rather than being directly exposed to the process environment or coolant. This not only protects the drive unit from harsh internal conditions (such as corrosive gases and extreme temperatures), improving its service life and reliability, but also greatly facilitates the installation, maintenance, and replacement of the drive unit. Ultimately, this structure ensures the accurate and reliable basic valve switching function while achieving physical isolation and protection of the core transmission components, enhancing the modular design and maintenance convenience of the entire angle valve structure.

[0045] In one embodiment, such as Figure 1As shown, a plurality of elastic sealing tubes 11 are provided between the outer shell 1 and the inner shell 10. The two ends of each elastic sealing tube 11 are connected to the outer shell 1 and the inner shell 10, respectively. These elastic sealing tubes 11 are respectively positioned over the first through hole, the second through hole, and the valve stem 9 to seal these locations. The arrangement of these elastic sealing tubes 11 cleverly solves the problem of multiple sealing and compensation in the presence of multiple shell structures and dynamic components (valve stem 9), ensuring the sealing reliability of the entire cooling and reaction chamber. The elastic sealing tubes 11 between the outer shell 1 and the inner shell 10 first establish a flexible, expandable sealing connection between the two rigid shells. This not only achieves physical isolation between the cooling chamber 2 of the outer shell 1 and the internal process chamber of the inner shell 10, preventing cross-contamination between coolant and process gas, but also effectively compensates for the small relative displacement or deformation between the two shells caused by temperature changes or pressure fluctuations, avoiding stress concentration or sealing failure caused by the rigid connection. Secondly, the elastic sealing tube 11 is respectively placed over the outside of the first through hole, the second through hole (gas passage), and the valve stem 9 (moving part), providing targeted and dynamic sealing for these critical and leak-prone points: for the stationary gas passage interface, it ensures a static seal at the interface; for the reciprocating valve stem 9, the elastic material can closely fit the surface of the valve stem 9 and deform with its movement, maintaining the seal without hindering the normal operation of the valve stem 9. This integrated elastic sealing design simplifies the structure and provides a crucial guarantee for the long-term stable operation of the entire angle valve under variable temperature and pressurized conditions.

[0046] In one embodiment, such as Figure 1 and Figure 2As shown, an equalization grid 14 is provided on the inner wall of the inner shell 10. The equalization grid 14 is located near the top of the inner shell 10 and divides the inner cavity of the inner shell 10 into an upper cavity and a lower cavity located at the bottom of the upper cavity and communicating with the first through hole and the second through hole. The equalization grid 14 is matched with the plasma source 5 so that the plasma generated by the plasma source 5 moves uniformly downward in the lower cavity after passing through the equalization grid 14. This optimizes the flow and distribution of plasma inside the inner shell 10, making its cleaning effect more uniform and efficient. The equalization grid 14 is located near the top of the inner shell 10 and divides the inner cavity into an upper cavity (plasma inlet region) and a lower cavity (main reaction and flow region), providing a structured space for plasma transport and diffusion. The key lies in the fact that when the plasma enters the upper cavity from the guide tube 6 of the plasma source 5, the equalization grid 14 acts like a "splitter" or "flow equalization plate," enabling the concentrated plasma flow to be dispersed and reorganized as it passes through its porous structure, thereby forming a uniform and diffuse downward-flowing airflow within the lower cavity. This uniform flow ensures that the plasma can fully and adequately cover the entire inner wall surface of the lower cavity (including the critical valve body area where the first and second through holes are located), avoiding localized cleaning dead zones caused by uneven plasma distribution, thus significantly improving the overall removal effect and consistency of deposited byproducts.

[0047] In one embodiment, the control valve 7, the drive unit, the external coolant source, and the plasma source 5 are all communicatively connected to a sensor and a processor. The sensor is used to collect signals of by-products deposited inside the inner housing 10 and temperature signals on or inside the inner housing 10. Based on the signals of by-products deposited inside the inner housing 10 and the temperature signals on or inside the inner housing 10, the processor drives the plasma source 5 to deliver plasma to the inner housing 10 to remove the deposited by-products and drives the external coolant source to deliver coolant to the cooling chamber 2 to cool the angle valve structure of the semiconductor device.

[0048] This embodiment's configuration endows the angle valve structure with automated operation capabilities of intelligent sensing and closed-loop control, transforming it from a passive component into an active, adaptive intelligent system. By communicating with the control valve 7, drive unit, external coolant source, and plasma source 5 to the sensors and processor, the system can monitor the core operating status in real time: byproduct deposition signals (such as spectral signals, differential pressure signals, etc.) and temperature signals collected by the sensors provide precise input to the processor. Based on this real-time data, the processor analyzes and judges; when the amount of byproduct deposition reaches a preset threshold, it automatically triggers the plasma source 5 to start, executing an online cleaning cycle; when an abnormal temperature (too high or too low) is detected, it automatically adjusts the start / stop and flow rate of the coolant source to achieve precise temperature control. This closed-loop control system, integrating sensing, decision-making, and execution functions, achieves on-demand, precise, and automated operation of the two core functions of cleaning and cooling, minimizing unnecessary energy consumption and component wear, while ensuring the valve always operates under optimal conditions, significantly improving the equipment's intelligence level, process stability, and overall energy efficiency.

[0049] In one embodiment, the sensor can be a spectral sensor, a particle counter, or an optical microscope sensor. These sensors function to acquire key state signals within the angle valve in real time and in situ. For example, a spectral sensor (such as an OES, optical emission spectrometer) can be used to monitor the characteristic spectral lines of specific chemical substances within the plasma processing chamber, thereby indirectly determining the composition and deposition thickness of byproducts. By comprehensively analyzing the byproduct signals (such as spectral changes) acquired by these sensors, the processor can intelligently determine the initiation timing and operating parameters for cleaning and cooling, thereby achieving precise closed-loop control.

[0050] In one embodiment, the processor can be a programmable logic controller, microcontroller, field-programmable gate array, application-specific integrated circuit, or industrial computer. Its core function is to act as the system's "decision center," receiving byproduct signals collected from various sensors and analyzing, judging, and making decisions based on preset control logic and algorithms. Specifically, the processor communicates with sensors, control valve 7, drive unit, external coolant source, and plasma source 5 through its input and output interfaces, monitoring the angle valve's operating status in real time. When analyzing sensor data and finding that the temperature of the inner shell 10 exceeds a set threshold, or detecting that the amount of byproduct deposition reaches a preset level, the processor immediately generates corresponding control commands, automatically driving the coolant source to start for cooling, or driving the plasma source 5 to start for online cleaning. This automated control based on real-time signal feedback achieves intelligent and precise management of the angle valve cleaning and cooling process without manual intervention, thereby significantly improving equipment stability, process consistency, and maintenance efficiency.

[0051] To address the problems existing in the prior art, embodiments of the present invention also provide a plasma processing device, including a process chamber, a main process pipeline, a molecular pump, a dry pump, and the aforementioned angle valve structure for semiconductor equipment. The main process pipeline is connected to the process chamber, and the molecular pump, the angle valve structure for semiconductor equipment, and the dry pump are sequentially arranged on the main process pipeline along the discharge direction of the process gas. This embodiment constructs a fully functional, smooth-flowing vacuum exhaust and tail gas treatment system with active maintenance capabilities. The improved angle valve structure for semiconductor equipment is integrated into the plasma processing device and positioned on the main process pipeline between the molecular pump and the dry pump, playing a crucial role in the vacuum pipeline. The molecular pump is used to achieve and maintain the high vacuum required for the process, while the dry pump acts as a fore-pump to provide primary vacuum. This angle valve structure, positioned between the two, can be used as a conventional vacuum angle valve to control the opening and closing of the main process pipeline, and its unique online plasma cleaning and efficient cooling functions can also directly act on the process gas and byproducts flowing through it. It effectively removes and decomposes byproducts flowing out of the process chamber and easily depositing in the valve body area, preventing them from clogging pipes and contaminating downstream molecular and dry pumps, thereby protecting the core vacuum equipment and significantly extending its maintenance cycle. This integrated design solves the byproduct deposition problem at the system level, improving the operational stability, reliability, and production efficiency of the entire plasma processing equipment.

[0052] In one embodiment, the plasma processing equipment can be a plasma etching equipment, a plasma resist stripping equipment, a plasma chemical vapor deposition equipment, a plasma-enhanced chemical vapor deposition equipment, or a plasma atomic layer deposition equipment. The core of this system lies in integrating the described angle valve structure for semiconductor equipment, which features online plasma cleaning and efficient cooling, into various semiconductor manufacturing equipment that relies on plasma processes. In etching equipment, this angle valve effectively handles etching byproducts, preventing their accumulation at the valve. In resist stripping equipment, it addresses organic residues generated during resist removal. In various deposition equipment, it handles incompletely reacted precursors or byproducts. By deploying this intelligent angle valve structure downstream of the equipment's process chamber, on the main process pipeline between the molecular pump and the dry pump, it can automatically remove process byproducts flowing through this area and precisely control the valve body temperature while the equipment is continuously running (online). This protects the downstream vacuum pump unit, significantly reduces unplanned downtime due to valve blockage or contamination, and improves the stability of key processes such as etching, resist stripping, and deposition, as well as the overall utilization rate of the equipment.

[0053] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the present invention. Furthermore, the present invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. An angle valve structure for a semiconductor device, characterized in that, Includes an outer shell, an inner shell, and a plasma source: The outer casing has a cooling chamber inside, and the outer casing has a first valve port and a second valve port that communicate with the cooling chamber. The outer casing also has a coolant inlet pipe that communicates with an external coolant source and can deliver coolant into the cooling chamber, and a coolant outlet pipe that discharges coolant out of the cooling chamber. The inner shell is disposed in the cooling chamber so that it is covered by the coolant when the coolant is introduced into the cooling chamber to achieve cooling and temperature reduction. The inner shell is provided with a first through hole communicating with the first valve port and a second through hole communicating with the second valve port so that the process gas and by-products introduced into the inner shell from the first valve port are discharged to the outside of the inner shell through the second valve port. The plasma source is located outside the inner shell, and its output end is connected to the inner shell to input plasma into the inner shell to remove the by-products deposited inside the inner shell.

2. The angle valve structure for semiconductor devices according to claim 1, characterized in that, The plasma source is embedded inside the outer shell or located outside the outer shell, and the output end of the plasma source is connected to a guide pipe. The free end of the guide pipe extends away from the plasma source, partially passes through the cooling cavity, and finally penetrates into the inner shell. A control valve is provided on the section of the guide pipe located in the inner shell to control the delivery and disconnection of the plasma.

3. The angle valve structure for semiconductor devices according to claim 1, characterized in that, A plurality of heat-conducting elements are arranged on each surface of the inner shell. The heat-conducting elements penetrate the shell wall of the inner shell and extend at both ends into the inner cavity of the inner shell and the cooling cavity, respectively, so as to directly conduct the heat on the inner shell and its inner cavity into the coolant in the cooling cavity through the heat-conducting elements.

4. The angle valve structure for semiconductor devices according to claim 3, characterized in that, The heat-conducting component is provided with a coolant channel, which includes a first vertical portion, a second vertical portion, and a U-shaped portion. The U-shaped portion is located inside the heat-conducting component, and at least a portion of the U-shaped portion is located within the inner cavity of the inner shell. The first vertical portion and the second vertical portion are recessed from the bottom and top of the heat-conducting component towards the middle, respectively, and the first vertical portion and the second vertical portion are respectively connected to both ends of the U-shaped portion, so that the coolant enters the U-shaped portion through the first vertical portion and flows out of the U-shaped portion through the second vertical portion, thereby carrying away the heat on the heat-conducting component when the coolant flows.

5. The angle valve structure for semiconductor devices according to claim 3, characterized in that, The heat-conducting component includes a fixed part, a movable part, a heat-conducting column part, and an elastic connector; The fixing part is fixedly inserted into the inner shell, and at least part of the fixing part is located inside the inner cavity of the inner shell. The end of the fixing part located outside the inner cavity of the inner shell has a movable groove recessed towards the inner cavity of the inner shell. At least a portion of the movable part is movably disposed within the movable groove, and an adjustable gap is formed between it and the side wall of the movable groove; The elastic connector is disposed between the moving part and the movable groove, and connects the moving part and the movable groove, so that when the elastic connector extends or shortens, the size of the adjustable gap can be adjusted by the movement of the moving part within the movable groove.

6. The angle valve structure for semiconductor devices according to claim 5, characterized in that, The movable part has a heat storage cavity recessed at one end within the movable groove, facing outwards from the movable groove. A heat-conducting column is fixedly inserted into the fixed part. One end of the heat-conducting column extends out of the fixed part and into the inner cavity of the inner shell, while the other end is movably disposed within the heat storage cavity. This allows heat from the inner shell and its inner cavity to be conducted into the heat storage cavity through the heat-conducting column, heating the gas inside. Under the action of the heated and expanding gas, the movable part is propelled to move within the movable groove.

7. The angle valve structure for semiconductor devices according to claim 2, characterized in that, The inner cavity of the inner housing is provided with a valve core, and the top of the valve core is connected to a valve stem. The top of the valve stem passes through the top plate of the inner housing and extends into the outer housing, and is connected to a drive unit provided on the outer housing. The valve core is adapted to the first through hole so that the drive unit drives the valve stem to move the valve core along the axial direction of the inner housing, thereby controlling the opening and closing of the first through hole.

8. The angle valve structure for semiconductor devices according to claim 7, characterized in that, A plurality of elastic sealing tubes are provided between the outer shell and the inner shell. The two ends of the elastic sealing tubes are respectively connected to the outer shell and the inner shell, and the plurality of elastic sealing tubes are respectively covered on the outside of the first through hole, the second through hole and the valve stem to seal the first through hole, the second through hole and the valve stem respectively.

9. The angle valve structure for semiconductor devices according to claim 8, characterized in that, An equalization grid is provided on the inner sidewall of the inner shell. The equalization grid is located near the top of the inner shell and divides the inner cavity of the inner shell into an upper cavity and a lower cavity located at the bottom of the upper cavity and communicating with the first through hole and the second through hole. The equalization grid is matched with the plasma source so that the plasma generated by the plasma source moves uniformly downward in the lower cavity after passing through the equalization grid.

10. The angle valve structure for semiconductor devices according to claim 7, characterized in that, The control valve, the drive unit, the external coolant source, and the plasma source are all communicatively connected to the sensor and the processor. The sensor is used to collect the by-product signal deposited in the inner housing and the temperature signal on or inside the inner housing. Based on the by-product signal deposited in the inner housing and the temperature signal on or inside the inner housing, the processor drives the plasma source to start delivering plasma to the inner housing to remove the deposited by-products, and drives the external coolant source to start delivering coolant into the cooling cavity to cool the angle valve structure of the semiconductor device.

11. A plasma processing device, characterized in that, The device includes a process chamber, a main process pipeline, a molecular pump and a dry pump, and an angle valve structure for semiconductor equipment as described in any one of claims 1 to 10, wherein the main process pipeline is connected to the process chamber, and the molecular pump, the angle valve structure for semiconductor equipment and the dry pump are sequentially arranged on the main process pipeline along the discharge direction of the process gas.

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