In-situ laser correction device and method in CVD diamond growth process

Abstract

The invention discloses an in-situ laser correction device and method in the CVD diamond growth process. The in-situ laser correction device comprises a CVD reaction chamber, an in-situ monitoring system, a laser correction system and a central processing unit. The in-situ monitoring system is used for carrying out real-time online monitoring on the surface of the CVD diamond growing in the CVD reaction chamber; the laser correction system is used for generating a correction laser beam and focusing and irradiating the correction laser beam to the identified CVD diamond defect area for correction; and the central processing unit is used for receiving monitoring data of the in-situ monitoring system, judging through a defect identification algorithm and sending a control instruction to trigger the laser correction system to execute corresponding correction actions. According to the method, the defects are eliminated in the defect initiation stage, the defects are guided to always grow along the correct crystal orientation and crystal face, and the growth quality, the yield and the production efficiency are improved.

Description

An in-situ laser correction device and method for CVD diamond growth process Technical Field

[0001] This application relates to the field of chemical vapor deposition technology, and in particular to an in-situ laser correction device and method for CVD diamond growth process. Background Technology

[0002] Chemical vapor deposition (CVD) is the primary method for preparing high-quality diamond films, single crystals, and various functional devices. However, during CVD diamond growth, minute fluctuations in process parameters such as substrate temperature, reactant gas concentration, and plasma state can easily lead to defects in diamond growth. These defects include the growth of polycrystalline or asymmetric growth from single-crystal substrates, unevenness such as mounds and steps on the growth surface, formation of non-diamond carbon phases (graphite, amorphous carbon, etc.), and diamond film rupture or performance degradation due to cracks and stress concentration.

[0003] Currently, the conventional approach to dealing with such growth defects is to remove the diamond sample from the reaction chamber after the growth process is complete, and then observe and analyze it using offline detection methods (such as optical microscopy, scanning electron microscopy, Raman spectroscopy, etc.). If defects are found, subsequent processing methods (such as laser cutting, mechanical polishing, etc.) are used to repair them, or the defective product is directly scrapped.

[0004] The drawback of existing technologies is their inability to intervene in the early stages of defect formation, leading to defect expansion, difficulty in repair, and even irreparable damage. Furthermore, post-growth repair is a destructive "subtractive" process, wasting the high-quality material already grown and potentially introducing new damage. The entire "growth detection and repair" cycle is lengthy, reducing production efficiency and increasing costs and energy consumption. This offline processing cannot achieve closed-loop control, interrupting the growth process and failing to form an intelligent, adaptive growth control system. Therefore, there is an urgent need in the field for a technical solution capable of detecting and immediately correcting growth defects during diamond growth. Summary of the Invention

[0005] The purpose of this application is to provide an in-situ laser correction device and method for the CVD diamond growth process, so as to solve one or more technical problems existing in the prior art, and at least provide a beneficial option or create conditions.

[0006] To achieve the above-mentioned objectives, this application employs the following technical solution:

[0007] This application provides an in-situ laser correction device for the CVD diamond growth process, including a CVD reaction chamber, an in-situ monitoring system, a laser correction system, and a central processing unit;

[0008] The in-situ monitoring system is used to monitor the surface of CVD diamond growing in the CVD reaction chamber in real time and online.

[0009] The laser correction system is used to generate a correction laser beam and focus it onto the identified CVD diamond defect area for correction.

[0010] The central processing unit is used to receive monitoring data from the in-situ monitoring system, make a judgment through a defect identification algorithm, and issue control commands to trigger the laser correction system to perform corresponding correction actions.

[0011] Furthermore, the in-situ monitoring system includes a high-speed CCD camera or a high-performance CMOS camera for aligning with the CVD diamond surface growing inside the CVD reaction chamber.

[0012] Furthermore, the laser correction system includes a laser source unit, a beam transmission and shaping unit, and a high-speed scanning and positioning unit;

[0013] The laser source unit is used to generate a corrected laser beam;

[0014] The beam transmission and shaping unit is used to receive and transmit and shape the corrected laser beam.

[0015] The high-speed scanning and positioning unit is used to guide the laser beam after shaping to change the incident angle, forming a focused spot with no distortion and uniform diameter. Through the scanning path preset by the central processing unit, the focused spot is driven to perform point-by-point or contour scanning processing on the identified defect area with specific parameters, so as to achieve precise ablation or smoothing of local areas.

[0016] Furthermore, the laser source unit employs a nanosecond or picosecond pulsed laser in the ultraviolet band.

[0017] Furthermore, the beam transmission shaping unit includes a beam expander, a collimating lens, and an energy attenuator;

[0018] The beam expander is used to increase the diameter of the laser beam;

[0019] The collimating lens is used to ensure that the light beam enters the high-speed scanning positioning unit in a parallel manner;

[0020] The energy attenuator is used to fine-tune the laser energy applied to the CVD diamond surface to adapt to the removal requirements of different defect types.

[0021] Furthermore, the high-speed scanning positioning unit includes a two-dimensional galvanometer system and a flat-field focusing lens located thereafter;

[0022] The two-dimensional galvanometer system includes two high-speed deflecting galvanometers that control the X-axis and Y-axis directions respectively; the high-speed deflecting galvanometers can be deflected under electromagnetic drive, thereby guiding the laser beam to change in the incident angle;

[0023] The flat-field focusing lens is used to focus laser beams with different incident angles onto the same focal plane on the CVD diamond surface, forming a distortion-free, uniformly sized focused spot.

[0024] Through the scanning path preset by the central processing unit, the two-dimensional galvanometer system can drive the focused spot to move instantaneously to a specified coordinate on the CVD diamond surface, and perform point-by-point or contour scanning processing on the identified defect area with specific parameters to achieve precise ablation or smoothing of local areas.

[0025] This application provides an in-situ laser correction method for the CVD diamond growth process, employing the aforementioned in-situ laser correction device. The method includes:

[0026] During the CVD diamond growth process, an in-situ monitoring system installed on the reaction chamber is used to monitor the surface of the growing CVD diamond in real time and online, and the monitoring data is transmitted to the central processing unit.

[0027] The central processing unit uses a defect identification algorithm to make a judgment. When a growth problem is identified, it triggers the laser correction system to start through a control command. The laser correction system generates a correction laser beam and focuses it to the identified CVD diamond defect area for correction.

[0028] After laser correction is completed, CVD diamond continues to grow under the original process parameters. The in-situ monitoring system continuously monitors the correction area and the entire growth surface, forming a closed-loop control until the CVD diamond growth process is completed.

[0029] Furthermore, the central processing unit makes a determination using a defect identification algorithm. When a growth problem is identified, it triggers the laser correction system to start via a control command, including:

[0030] Image data is acquired and preprocessed. Noise is removed by median filtering and Gaussian smoothing, and histogram equalization and background correction techniques are used to enhance contrast and eliminate the effects of uneven lighting. At the same time, the image is normalized to the standard grayscale range.

[0031] Feature extraction and defect detection are performed. The Canny operator is used for edge detection to delineate grain boundaries and protrusion contours. The surface texture is analyzed by calculating the local binary mode (LBP) to distinguish between uniform diamond phase and disordered non-diamond phase. Adaptive threshold segmentation technology is used to separate abnormally bright or dark areas in the image and preliminarily identify the location of potential defects.

[0032] Based on the initial identification, morphological operations are used to optimize the segmented areas in order to accurately separate the mutually adhering defects and fill the meaningless holes;

[0033] Extract the features of each connected region and automatically identify and classify defects according to preset classification rules;

[0034] After completing defect identification and classification, the centroid coordinates of each defect region are calculated, and the image pixel coordinates are accurately converted into spatial coordinates within the CVD reaction chamber through a pre-calibrated transformation matrix. These coordinates are then mapped to the control coordinate system of the laser correction system, providing precise positioning targets for laser correction.

[0035] A comprehensive severity score is calculated based on the type, size, and degree of grayscale anomaly of the defect. When the score exceeds a preset threshold, a control command containing the defect type, coordinates, suggested laser energy, and scanning path is generated and sent to the laser correction system to trigger immediate intervention.

[0036] Furthermore, the laser correction system generates a correction laser beam and focuses it onto the identified CVD diamond defect area for correction, including:

[0037] The laser correction system generates a correction laser beam and transmits and shapes the correction laser beam;

[0038] The laser beam after shaping is guided to change at the incident angle, forming a focused spot with no distortion and uniform diameter;

[0039] Based on the preset scanning path of the central processing unit, the focused spot is driven to perform point-by-point or contour scanning processing on the identified defect area with specific parameters, so as to achieve precise ablation or smoothing of local areas.

[0040] Furthermore, the specific parameters include:

[0041] The wavelength is 355nm, the repetition frequency is 10kHz-500kHz, the single pulse energy is 10-1000μJ, and the scanning speed is 10-2000mm / s.

[0042] The beneficial effects of this application are as follows:

[0043] This application achieves real-time monitoring and proactive intervention in the diamond growth process through an in-situ monitoring system and a laser correction system, eliminating defects at the initiation stage and guiding the diamond to grow along the correct crystal orientation and crystal plane, thereby significantly improving the diamond growth quality, yield, and production efficiency. Attached Figure Description

[0044] Figure 1 is a schematic diagram of an in-situ laser correction device for CVD diamond growth process according to an embodiment of this application;

[0045] Figure 2 is an overall flowchart of an in-situ laser correction method for CVD diamond growth process according to an embodiment of this application;

[0046] Figure 3 is an optical path diagram of an in-situ laser correction device and method for CVD diamond growth process provided in an embodiment of this application. Detailed Implementation

[0047] The present application will now be further described in conjunction with the accompanying drawings and specific embodiments. It should be noted that, without conflict, the various embodiments or technical features described below can be arbitrarily combined to form new embodiments.

[0048] As shown in Figures 1 and 3, an in-situ laser correction device for CVD diamond growth includes a CVD reaction chamber 10, a gas path system 20, an energy system 30, a temperature control system, an in-situ monitoring system 40, a laser correction system 50, and a central processing unit. The in-situ monitoring system 40 is used to monitor the surface of the CVD diamond 60 growing in the CVD reaction chamber 10 in real time and online. The laser correction system 50 is used to generate a correction laser beam and focus it to correct the identified defect areas of the CVD diamond 60. The central processing unit is used to receive the monitoring data from the in-situ monitoring system 40, make a judgment through a defect identification algorithm, and issue control commands to trigger the laser correction system 50 to perform the corresponding correction action.

[0049] Based on the above structure, the CVD reaction chamber 10 is a stainless steel reaction chamber equipped with a quartz microwave entrance window. The chamber is connected to a vacuum unit consisting of mechanical pumps and molecular pumps to achieve and maintain the gas pressure environment required for the process. The sample stage is located below the plasma region inside the chamber.

[0050] Based on the above structure, the gas path system 20 includes high-purity hydrogen and carbon source gas sources, a mass flow controller, and corresponding gas pipelines. The mass flow controller precisely controls the flow rate and mixing ratio of each reactant gas, and the mixed gas is injected into the reaction chamber through the inlet.

[0051] Based on the above structure, the energy system 30 includes a magnetron microwave source, a waveguide transmission network, and an impedance matching device. The magnetron generates continuous microwaves at a frequency of 2.45 GHz. The waveguide network directionally transmits the microwave energy to the reaction chamber, where a built-in circulator isolates reflected waves to protect the microwave source, and a directional coupler monitors forward and reflected power. A three-screw or four-screw impedance matching device optimizes the impedance matching of microwave transmission, maximizing energy coupling efficiency.

[0052] Based on the above structure, the temperature control system consists of a network of water-cooled channels covering the reaction chamber walls, sample stage, and microwave window. An external circulating cooling device is used to remove the high-density heat generated by the plasma, ensuring the thermal stability of all components of the system during the process.

[0053] Here, the operating mode within the CVD reaction chamber 10 follows a sequentially controlled steady-state process, as detailed below:

[0054] Initialization and Preparation: Start the vacuum unit and evacuate the reaction chamber to a basic vacuum. Purge with inert gas for cleaning. Preheat the substrate to the target temperature range using the sample stage's independent heater or pre-introduced hydrogen plasma.

[0055] Plasma ignition and process setup: Hydrogen gas is introduced into the chamber at the process flow rate. The magnetron is activated, outputting microwaves at the set power. Through impedance matching, the electric field strength within the chamber is tuned to reach the hydrogen ionization threshold, thereby igniting and forming a hydrogen plasma sphere. After the plasma stabilizes, carbon source gas is introduced at a set ratio.

[0056] Steady-state growth: Entering the automatic control stage. Microwave power, chamber pressure, gas type, flow rate and ratio, and substrate temperature are all locked and maintained at preset process parameter setpoints. Under this steady state, the plasma continuously generates hydrogen atoms and carbon-containing active groups. These groups undergo adsorption, migration, and chemical reactions on the substrate surface, achieving epitaxial growth of diamond crystals. The impedance matching device is fine-tuned in real time to minimize reflected power.

[0057] Shutdown: After the growth process is complete, turn off the carbon source gas and microwave power sequentially. After the plasma is extinguished, stop the hydrogen supply. Cool to a safe temperature in a hydrogen or inert gas atmosphere, and finally remove the sample by venting.

[0058] Throughout the entire process, the CVD reaction chamber 10, gas path system 20, energy system 30, and temperature control system provide a continuous, stable, and controllable energy field and reaction environment for diamond growth. Its highly stable steady-state control characteristics ensure that macroscopic growth conditions do not drift at the moment the laser correction action is triggered by the subsequent in-situ monitoring system 40, thereby guaranteeing high-quality continuous growth of the material surrounding the correction area and seamless recovery of the growth process after correction.

[0059] Based on the aforementioned structure, the in-situ monitoring system 40 includes a high-speed CCD camera or a high-performance CMOS camera, used to align with the surface of the CVD diamond 60 growing within the CVD reaction chamber 10. Specifically, the in-situ monitoring system serves as the "visual perception center" of the entire system, its core task being to replace the human eye in achieving stable, clear, and intelligent identification of micron-level surface defects amidst the chaos and interference of the growth process. This system is not a simple camera probe, but a precision photoelectric sensing closed loop deeply integrated into the unique environment of the reaction chamber. Its main hardware consists of a high-performance image sensor, a specially designed long-working-distance microscopic optical component for penetrating the viewing window and magnifying the microscopic world, and a carefully designed illumination unit to highlight defect characteristics. In this system, a high-speed CCD or high-performance CMOS camera acts as the "retina," and its high resolution and high sensitivity ensure that it can capture subtle shadows and brightness changes in growth mounds or heterogeneous deposits. To combat the thermal radiation of the chamber and achieve clear imaging at a distance, a set of infinity-corrected microscope objectives containing multi-layered coated lenses is used. It passes through the quartz observation window of the reaction chamber and transmits the microscopic morphology of the substrate surface several centimeters away to the sensor target surface without damage. At the same time, a cold light source system consisting of an LED array of a specific wavelength (such as 532 nm green light) illuminates the sample surface in a low-angle tilt illumination manner, so that any tiny topological undulations can produce strong light and dark contrast, laying a solid foundation for subsequent image analysis.

[0060] Based on the above structure, the laser correction system 50 is the core actuator for in-situ intervention in this application. It is a precision opto-mechatronics module integrated outside the CVD reaction chamber 10 and connected to the internal growth region via an optical window. The system mainly consists of three key subsystems: a laser source unit, a beam transmission and shaping unit, and a high-speed scanning and positioning unit.

[0061] The laser source unit is the energy foundation of the entire system, and its selection directly determines the correction mechanism and effect. The application preferably uses a nanosecond or picosecond pulsed laser in the ultraviolet band, such as a solid-state laser with a wavelength of 355 nm. This wavelength selection is based on two key reasons: first, diamond materials have a high absorption rate in this band, ensuring that energy can be effectively absorbed by defects; second, the photon energy is higher than the bond energy of many non-diamond carbon phases, enabling selective ablation. The laser operates in pulsed mode, and its single-pulse energy, repetition frequency, and pulse width must be precisely adjustable. The single-pulse energy is typically set in the microjoule to millijoule range, sufficient to vaporize micron-scale surface impurities or abnormal growths, but the energy density is precisely controlled to limit its effect to a very shallow surface layer, avoiding damage to the underlying high-quality substrate. A high repetition frequency ensures continuous and uniform processing of the defect area during scanning.

[0062] The raw laser beam first enters the beam transmission and shaping unit. This unit typically contains a series of precision optical components, such as a beam expander 52, a collimator 53, and an energy attenuator. The beam expander increases the diameter of the laser beam, thereby reducing its divergence angle and creating conditions for subsequent fine focusing. The collimator ensures that the beam enters the scanning system in a parallel manner, guaranteeing the stability of the focused spot at different scanning angles. The energy attenuator is used to fine-tune the laser energy ultimately applied to the sample surface under software control to accommodate the removal requirements of different defect types (such as shallow graphite or protruding growth mounds). The entire optical path is sealed within a clean optical conduit to prevent dust contamination and ensure operational safety.

[0063] The shaped laser beam is then guided into a high-speed scanning and positioning unit, which is crucial for achieving "precise" correction. The core of this unit consists of a two-dimensional galvanometer system and a flat-field focusing lens 55 (F-Theta lens) located behind it. The two-dimensional galvanometer system comprises two high-speed deflecting mirrors 54 (controlling the X and Y axes respectively). Driven electromagnetically, the mirrors can be deflected with precision down to the micro-radian level, thereby guiding the laser beam to rapidly change its incident angle. The flat-field lens focuses beams from different incident angles onto the same focal plane on the sample surface within the reaction chamber, forming a distortion-free, uniformly sized focused spot (e.g., 10 micrometers). By using the scanning path preset by the central processing unit (such as raster scanning, vector filling, or contour tracking), the galvanometer system can drive the high-energy light spot to move instantaneously to the specified coordinates on the sample surface, and perform point-by-point or contour scanning processing on the identified defect area with specific parameters (repetition frequency 10kHz~500kHz, single pulse energy 10~1000μJ, scanning speed 10~2000mm / s), so as to achieve precise ablation or smoothing of local areas.

[0064] All the aforementioned units are uniformly coordinated and driven by a central processing unit. This central processing unit receives defect coordinates and type information from the in-situ monitoring system. The central processing unit contains control software with a built-in database of laser process parameters (such as energy, scanning speed, and filling spacing) for different defects, and can automatically generate corresponding scanning path instructions. These instructions are synchronously sent to the laser's power module and the galvanometer's servo controller via digital interfaces, triggering their coordinated operation. Simultaneously, this unit also integrates a safety interlock module, ensuring that the laser is only triggered when the chamber is in the growth state and the monitoring system confirms the target, and can monitor the laser status and optical path integrity in real time, forming a reliable, automated closed-loop execution terminal.

[0065] As shown in Figures 2 and 3, an in-situ laser correction method for the CVD diamond growth process, using the aforementioned in-situ laser correction device, includes the following steps:

[0066] S100, during the CVD diamond growth process, the surface of the growing CVD diamond 60 is monitored in real time and online by the in-situ monitoring system 40 installed on the CVD reaction chamber 10, and the monitoring data is transmitted to the central processing unit.

[0067] S200, the central processing unit uses a defect identification algorithm to make a judgment. When a growth problem is identified, the laser correction system 50 is triggered to start through a control command, so that the laser correction system 50 generates a correction laser beam and focuses it to the identified defect area of ​​the CVD diamond 60 for correction.

[0068] After laser correction is completed in S300, CVD diamond 60 continues to grow under the original process parameters. Specifically, microwave power, chamber pressure, gas type, flow rate and ratio, and substrate temperature are all locked and maintained at the preset process parameter settings. The in-situ monitoring system 40 continuously monitors the correction area and the entire growth surface, forming a closed-loop control until the CVD diamond 60 growth process ends.

[0069] In the above S200, the central processing unit makes a determination through a defect identification algorithm. When a growth problem is identified, it triggers the laser correction system to start through a control command, specifically including:

[0070] S201. After acquiring the image data, preprocessing is performed to optimize image quality. This stage removes noise through median filtering and Gaussian smoothing, and uses histogram equalization and background correction techniques to enhance contrast and eliminate the effects of uneven lighting, making defect features more prominent. At the same time, the image is normalized to the standard grayscale range, laying the foundation for subsequent accurate analysis.

[0071] S202, then proceeds to the core feature extraction and defect detection stage. The algorithm comprehensively utilizes multiple image processing methods: edge detection is performed using the Canny operator to delineate grain boundaries and protrusion contours; surface texture is analyzed by calculating local binary patterns (LBP) to distinguish between uniform diamond phases and disordered non-diamond phases; and adaptive threshold segmentation technology is used to separate abnormally bright or dark areas in the image, initially identifying potential defect locations.

[0072] S203, based on the initial identification, the algorithm optimizes the segmented regions through morphological operations to accurately separate mutually adhering defects and fill meaningless holes. Next, the algorithm extracts features such as shape, area, average gray level, and texture uniformity of each connected region, and automatically identifies and classifies defects according to preset classification rules (regions with high gray level and messy texture are identified as graphite phase, and closed edge regions with high roundness are identified as growth mounds).

[0073] S204 After completing defect identification and classification, the algorithm calculates the centroid coordinates of each defect region and accurately converts the image pixel coordinates into spatial coordinates within the reaction chamber through a pre-calibrated transformation matrix. This coordinates are then mapped to the control coordinate system of the laser galvanometer system, providing precise positioning targets for laser correction.

[0074] S205. Next, the algorithm calculates a comprehensive severity score based on the defect's type, size, and degree of grayscale anomaly. When the score exceeds a preset threshold, the system immediately generates control instructions containing the defect type, coordinates, suggested laser energy, and scanning path, and sends them to the laser correction system via the communication interface, triggering immediate intervention.

[0075] In the above-mentioned S300, after the laser correction is completed, the in-situ monitoring system 40 continuously observes the corrected area and the entire growth surface to verify the correction effect and monitor whether any new defects are generated. This process of "acquisition-analysis-identification-location-decision-correction-verification" is repeated until the growth process is completed, thereby realizing real-time in-situ monitoring and active quality control of the diamond growth process.

[0076] The technical effects of this application are as follows:

[0077] In-situ and real-time: By embedding the detection and correction process into the growth process, early detection and treatment of growth defects are achieved, avoiding the accumulation of defects.

[0078] Actively guided growth: This is a shift from the traditional "passive growth with post-repair" to "active guidance and process correction," which is essentially an intelligent growth model.

[0079] High precision and non-destructive / minimally destructive: The laser action area is precise, removing only the defective parts, causing minimal damage to the surrounding high-quality diamond, and preserving the growth material to the maximum extent.

[0080] Improved quality and efficiency: Significantly improved the crystal quality, surface smoothness and phase purity of the final product, while reducing the scrap rate and shortening the production cycle, resulting in high overall benefits.

[0081] The above description is only a preferred embodiment of this application. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the technical principles of this application, and these improvements and modifications should also be considered within the scope of protection of this application.

Claims

1. An in-situ laser correction device for CVD diamond growth process, characterized in that, The system includes a CVD reaction chamber, an in-situ monitoring system, a laser correction system, and a central processing unit. The in-situ monitoring system is used to monitor the surface of the CVD diamond growing in the CVD reaction chamber in real time and online. The laser correction system is used to generate a correction laser beam and focus it to correct the identified CVD diamond defect areas. The central processing unit is used to receive the monitoring data from the in-situ monitoring system, make a judgment through a defect identification algorithm, and issue control commands to trigger the laser correction system to perform the corresponding correction actions.

2. The in-situ laser correction device for CVD diamond growth process according to claim 1, characterized in that, The in-situ monitoring system includes a high-speed CCD camera or a high-performance CMOS camera, used to align with the CVD diamond surface growing inside the CVD reaction chamber.

3. The in-situ laser correction device for CVD diamond growth process according to claim 1, characterized in that, The laser correction system includes a laser source unit, a beam transmission and shaping unit, and a high-speed scanning and positioning unit. The laser source unit generates a correction laser beam. The beam transmission and shaping unit receives the correction laser beam and transmits and shapes it. The high-speed scanning and positioning unit guides the shaped laser beam to change its incident angle, forming a distortion-free, uniformly sized focused spot. Through a preset scanning path by the central processing unit, the focused spot is driven to perform point-by-point or contour scanning processing on the identified defect area with specific parameters, achieving precise ablation or smoothing of local areas.

4. The in-situ laser correction device for CVD diamond growth process according to claim 3, characterized in that, The laser source unit uses a nanosecond or picosecond pulsed laser in the ultraviolet band.

5. The in-situ laser correction device for CVD diamond growth process according to claim 3, characterized in that, The beam transmission and shaping unit includes a beam expander, a collimator, and an energy attenuator; the beam expander is used to increase the diameter of the laser beam; the collimator is used to ensure that the beam enters the high-speed scanning positioning unit in a parallel manner; the energy attenuator is used to fine-tune the laser energy acting on the CVD diamond surface to adapt to the removal requirements of different defect types.

6. The in-situ laser correction device for CVD diamond growth process according to claim 3, characterized in that, The high-speed scanning and positioning unit includes a two-dimensional galvanometer system and a flat-field focusing lens located behind it. The two-dimensional galvanometer system includes two high-speed deflecting galvanometers that control the X-axis and Y-axis directions respectively. The high-speed deflecting galvanometers can be deflected under electromagnetic drive, thereby guiding the laser beam to change at the incident angle. The flat-field focusing lens is used to focus laser beams with different incident angles onto the same focal plane on the CVD diamond surface, forming a distortion-free, uniformly sized focused spot. Through the scanning path preset by the central processing unit, the two-dimensional galvanometer system can drive the focused spot to move instantaneously to a specified coordinate on the CVD diamond surface, and perform point-by-point or contour scanning processing on the identified defect areas with specific parameters to achieve precise ablation or flattening of local areas.

7. An in-situ laser correction method for CVD diamond growth process, characterized in that, The method employs the in-situ laser correction device as described in any one of claims 1-6, comprising: during the CVD diamond growth process, real-time online monitoring of the growing CVD diamond surface is performed by an in-situ monitoring system installed on the CVD reaction chamber, and the monitoring data is transmitted to the central processing unit; the central processing unit uses a defect identification algorithm to determine whether a growth problem is detected, and triggers the laser correction system to start by controlling the system, so that the laser correction system generates a correction laser beam and focuses it to the identified CVD diamond defect area for correction; after the laser correction is completed, the CVD diamond continues to grow under the original process parameters, and the in-situ monitoring system continuously monitors the correction area and the entire growth surface to form a closed-loop control until the CVD diamond growth process ends.

8. The in-situ laser correction method for CVD diamond growth process according to claim 7, characterized in that, The central processing unit makes judgments based on a defect identification algorithm. When a growth problem is identified, it triggers the laser correction system to start via a control command. This includes: acquiring image data, performing preprocessing, removing noise through median filtering and Gaussian smoothing, and using histogram equalization and background correction techniques to enhance contrast and eliminate the effects of uneven illumination, while normalizing the image to a standard grayscale range; performing feature extraction and defect detection, using the Canny operator for edge detection to delineate grain boundaries and protrusion contours, analyzing surface texture by calculating local binary mode (LBP) to distinguish between uniform diamond phases and disordered non-diamond phases, and using adaptive threshold segmentation technology to separate abnormally bright or dark areas in the image, thus initially identifying potential defect locations. Based on the initial identification, morphological operations are used to optimize the segmented regions to accurately separate interconnected defects and fill meaningless holes. Features of each connected region are extracted, and defects are automatically identified and classified according to preset classification rules. After defect identification and classification, the centroid coordinates of each defect region are calculated, and the image pixel coordinates are accurately converted into spatial coordinates within the CVD reaction chamber using a pre-calibrated transformation matrix. These coordinates are then mapped to the control coordinate system of the laser correction system, providing precise positioning targets for laser correction. A comprehensive severity score is calculated based on the defect type, size, and degree of grayscale anomaly. When the score exceeds a preset threshold, a control command containing the defect type, coordinates, suggested laser energy, and scanning path is generated and sent to the laser correction system to trigger immediate intervention.

9. The in-situ laser correction method for CVD diamond growth process according to claim 8, characterized in that, The laser correction system generates a correction laser beam and focuses it onto the identified CVD diamond defect area for correction. This includes: the laser correction system generates a correction laser beam and transmits and shapes the correction laser beam; guiding the shaped laser beam to change its incident angle to form a distortion-free, uniform diameter focused spot; and, based on the scanning path preset by the central processing unit, driving the focused spot to perform point-by-point or contour scanning processing on the identified defect area with specific parameters to achieve precise ablation or smoothing of the local area.

10. The in-situ laser correction method for CVD diamond growth process according to claim 9, characterized in that, The specific parameters include: wavelength of 355nm, repetition frequency of 10kHz-500kHz, single pulse energy of 10-1000μJ, and scanning speed of 10-2000mm / s.

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