Residual adhesive cleaning-free method for ultra-thin monocrystalline silicon wafer degumming process

Abstract

The invention discloses a residual glue cleaning-free method for an ultra-thin monocrystalline silicon wafer degumming procedure, which comprises the following steps of: firstly, bonding a plastic plate and an iron plate together by using iron plate bonding glue, and then bonding a monocrystalline square rod and the plastic plate together by using rod bonding glue; after the bonded silicon rod is cured for more than or equal to 2H, the silicon rod is conveyed to a slicing machine, a diamond wire is adopted for silicon wafer cutting, the silicon rod is cut for 110-150 minutes, the silicon rod is cut into 4200-4800 ultrathin monocrystalline silicon wafers with the thickness of 110-130 microns after cutting is completed, and a crystal support iron plate is discharged from the machine to a degumming tool and conveyed to a degumming process for degumming; the silicon wafer is carefully cleaned through an ultrasonic cleaning technology, and stubborn dirt on the silicon wafer is removed; carrying out high-temperature degumming on the silicon wafer by using a degumming agent so as to separate the ultrathin monocrystalline silicon wafer from the mounting plate; on the basis of innovation and optimization of the glue performance and the degumming agent performance, in the degumming process, the silicon wafer is smoothly stripped from the stick glue, the workpiece plate and the resin plate, the residual proportion of glue threads on the surface of the silicon wafer and chamfers is reduced to 0.05% from original 20%, and glue wiping is basically avoided.

Description

Technical Field

[0001] This invention relates to the field of photovoltaic wafer slicing technology, specifically to a method for removing residual adhesive during the debonding process of ultrathin monocrystalline silicon wafers without cleaning. Background Technology

[0002] Silicon wafers for solar cells are made by cutting silicon rods using a multi-wire dicing machine, with diamond wire multi-wire dicing technology becoming the mainstream technology. Diamond wire multi-wire dicing technology has advantages such as high cutting efficiency, minimal silicon wafer damage, and small overall wafer thickness deviation.

[0003] Multi-wire cutting begins by winding diamond wire around the guide wheel groove, thus restricting the horizontal movement of the diamond wire and keeping its cutting position constant. Multiple diamond wires are wound in circles to form a wire mesh. A silicon rod is mounted on the worktable, which feeds towards the diamond wires at a set feed speed. Simultaneously, the diamond wire slicing machine uses a unidirectional or reciprocating cyclic motion of the diamond wires, creating a relative grinding motion between the diamond wires and the workpiece being cut, thereby achieving the purpose of silicon wafer cutting.

[0004] To achieve the above cutting process, the plastic plate is first glued to the crystal support plate with adhesive, and then the single crystal rod is glued to the plastic plate with stick adhesive. After that, the single crystal rod is fixed in the cutting chamber of the cutting machine by the crystal support plate for cutting. Therefore, after the silicon wafer is cut, the silicon wafer and the plastic plate need to be de-adhesive to remove the silicon wafer from the plastic plate without damage, so that it can enter the next process.

[0005] The degumming process generally consists of three steps: spray degumming, ultrasonic cleaning, and high-temperature degumming. Degumming is achieved by adding a degumming agent to the degumming tank. The quality of degumming performance is closely related to the properties of the adhesive, the degumming agent, and the degumming process itself.

[0006] As silicon wafer thickness decreases from 150µm to 130µm or even thinner, the adhesive strength of the bonding rods continuously increases to prevent wafer detachment after dicing. This increased adhesive strength presents new challenges to the debonding process; achieving successful debonding without increasing costs has become a new issue. In existing technologies, some adhesive residue remains on the adhesive surface or chamfer of the silicon wafer during debonding, requiring manual removal. If personnel are negligent or the cleaning process is inadequate, it cannot be removed during the cleaning process, resulting in residual adhesive on the wafer. With the advent of thinner silicon wafers, the wire diameter has decreased, and the gaps between adhesive layers have narrowed, making it difficult for existing debonding agents to reach the middle of the wafer, leading to difficulties in debonding at this stage and increasing the risk of edge chipping. Furthermore, existing debonding agents are directly discharged as wastewater after debonding up to 160 dices, wasting reagent costs and incurring high wastewater treatment costs.

[0007] Therefore, to address the above problems, this invention provides a method for removing residual adhesive in the debonding process of ultrathin monocrystalline silicon wafers without cleaning. This invention aims to improve the performance of the adhesive by iterating on its properties and enhancing the penetration ability of the debonding agent. By adding the agent as needed, the cost of the reagent is reduced without affecting the debonding effect. Summary of the Invention

[0008] The purpose of this invention is to provide a method for removing residual adhesive in the debonding process of ultrathin single-crystal silicon wafers without cleaning up the adhesive residue. Starting from the adhesive performance, the method iterates the adhesive performance, improves the penetration ability of the debonding agent, and adopts a supplementary addition method to reduce the cost of the reagents without affecting the debonding effect.

[0009] The objective of this invention is achieved through the following technical solution:

[0010] A method for removing residual adhesive during the debonding process of ultrathin single-crystal silicon wafers without cleaning the adhesive residue, specifically including the following steps:

[0011] S1. Adhesive process: First, use adhesive for iron plates to bond the plastic plate to the iron plate, and then use adhesive for sticks to bond the single crystal square rod to the plastic plate.

[0012] S2. Cutting process: After the bonded silicon rod has been cured for ≥2 hours, it is transported to the slicing machine and cut into silicon wafers using diamond wire. The silicon rod is cut for 110-150 minutes to complete the cutting. The silicon rod is cut into 4200-4800 ultra-thin single crystal silicon wafers with a thickness of 110-130 micrometers. The crystal support iron plate is removed from the machine and transported to the debonding fixture for debonding.

[0013] S3. Ultrasonic cleaning and debonding process: The first and second tanks are ultrasonic cleaning tanks, which mainly use ultrasonic cleaning technology to thoroughly clean the silicon wafers and remove stubborn dirt from them; the third, fourth and fifth tanks are high-temperature debonding tanks, which use debonding agents to debond the silicon wafers at high temperatures so that the ultra-thin single crystal silicon wafers can be separated from the mounting plate.

[0014] In the above technical solution, during the adhesive process, a thin-film adhesive stick is developed and introduced to improve the adhesion to the plastic sheet, so that the adhesive tends to remain on the plastic sheet during debonding.

[0015] Preferably, the adhesive stick comprises component A and component B. By weight, component A includes 100-250 parts epoxy resin, 15-30 parts ester, 0.1-9 parts defoamer, 0.01-3 parts coupling agent, 0.01-2 parts diluent, 12-55 parts filler, 2-8 parts adhesion promoter, and 3-10 parts acid-sensitive material; component B includes 100-160 parts curing agent, 10-50 parts ester, 7-30 parts polyamide, 5-10 parts diluent, and 20-50 parts filler.

[0016] Preferably, the filler is selected from one or more of magnesium silicate, calcium carbonate, and aluminum hydroxide.

[0017] Preferably, the acid-sensitive material is selected from 1-propanethiol or 1,3-propanedithiol.

[0018] Preferably, the adhesion promoter is mainly an epoxy-based wetting agent, which is selected from methylsilane or ethylsilane.

[0019] Preferably, the epoxy resin is a bisphenol A epoxy resin, and the bisphenol A epoxy resin is selected from one or more of E-51, E-55, and E-56.

[0020] Preferably, the curing agent is selected from polythiol 3830 or polythiol JH-3381.

[0021] In the above technical solution, an adhesion promoter is added to improve the adhesion of the adhesive to the plastic sheet. The adhesion promoter is mainly an epoxy resin wetting agent. This type of promoter helps the epoxy resin to better wet the surface of the plastic sheet, increase the contact area, and thus improve the adhesion. The wetting agent can reduce the surface tension of the epoxy resin, making it easier to spread on the surface of the plastic sheet.

[0022] In the above technical solution, the active epoxy group of bisphenol A epoxy resin undergoes a ring-opening polymerization reaction with the active mercapto or secondary amine group in the curing agent to form a three-dimensional cross-linked thermosetting polymer. The morphology changes from linear to three-dimensional network structure. By adjusting different curing agents, the cross-linking density can be changed.

[0023] In the above technical solution, the degumming process first involves developing and introducing a thin-film degumming agent to improve its high permeability. In the prior art, the main components of the degumming agent are citric acid (30%), lactic acid (50%), and a compounded surfactant (20%). The compounded surfactant mainly includes penetrants and dispersants. This application increases the proportion of lactic acid to 55% and the proportion of compounded surfactant to 25%, thereby increasing the free acidity and improving the permeability of the degumming agent to the glue, thus improving the degumming effect.

[0024] In the above technical solution, the degumming process optimizes the degumming process parameters and the change cycle, enhances the no-wiping effect, and adopts a replenishment mode for the degumming agent to increase the number of degumming cuts. In the prior art, 25 kg of degumming agent is added to a single tank, and the tank is drained directly after 160-200 cuts. This application increases the number of degumming cuts to 300-350 cuts by adding 10 kg of agent after 150 cuts, and the agent consumption per cut decreases from 0.16 kg / cut to 0.10 kg / cut, a reduction of 37.5%.

[0025] In the above technical solution, the degumming process is optimized to improve degumming efficiency and reduce energy consumption. The cleaning tank time is reduced to 5-10 seconds, the soaking time is reduced from 200 seconds to 100 seconds, the degumming time is reduced from 200 seconds to 180 seconds, and the degumming temperature is reduced from 65℃ to 60 seconds. By reducing the degumming time and temperature, the degumming time is reduced from 610 seconds to 470 seconds, and the single-blade degumming time is reduced by 140 seconds, a reduction of 23%.

[0026] Due to the application of the above technical solution, the present invention has the following beneficial effects compared with the prior art:

[0027] 1. This invention reduces the labor intensity of employees. By adjusting the properties of the adhesive, no adhesive residue is left after degumming, achieving the effect of eliminating the need for employees to wipe off the adhesive, thus reducing the labor intensity of employees.

[0028] 2. This invention improves degumming efficiency by optimizing the performance of the degumming agent and enhancing its penetration ability into the thin slices after slicing, thereby achieving rapid, efficient, and low-temperature degumming.

[0029] 3. This invention reduces the consumption of the degumming agent. Initially, a portion of the degumming agent is added. As the number of degumming blades increases, the acidity continuously decreases. Appropriate addition of degumming agent can improve the degumming performance and extend the number of degumming blades, thereby reducing the consumption of the degumming agent.

[0030] 4. This invention combines the cleanliness of the silicon wafer after it is removed from the wafer with a comprehensive matching of soaking time, debonding time and debonding temperature to improve debonding efficiency and optimize the debonding process.

[0031] 5. Based on the innovative optimization of the adhesive performance, de-adhesive performance and de-adhesive process, this invention enables the silicon wafer to be smoothly separated from the adhesive rod, workpiece board and resin board during the de-adhesive process. The residual proportion of adhesive threads on the silicon wafer surface and chamfer is reduced from 20% to 0.05%, basically achieving no adhesive removal. Attached Figure Description

[0032] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, some of the drawings in the following description are some embodiments of the present invention. For those skilled in the art, other drawings can be made based on these drawings without creative effort.

[0033] Figure 1 This is a schematic diagram of the ultrathin single-crystal silicon wafer after adhesive bonding in Embodiment 1 of the present invention;

[0034] Figure 2 This is a schematic diagram of the ultrathin single-crystal silicon wafer after debonding in Embodiment 1 of the present invention;

[0035] Among them, 1. Crystal support iron plate; 2. Iron plate adhesive; 3. Rod adhesive; 4. Plastic plate; 5. Ultra-thin monocrystalline silicon wafer; 6. Monocrystalline square rod. Detailed Implementation

[0036] To provide a clearer understanding of the technical features, objectives, and effects of this invention, specific implementation schemes are now described in detail.

[0037] The present invention will be further described below with reference to embodiments, but the present invention is not limited to the following embodiments. The implementation conditions used in the embodiments can be further adjusted according to different requirements of specific use, and the implementation conditions not specified are conventional conditions in the industry. The technical features involved in the various embodiments of the present invention can be combined with each other as long as they do not conflict with each other.

[0038] Example 1

[0039] See appendix Figure 1-2 This embodiment provides a method for removing residual adhesive during the debonding process of ultrathin single-crystal silicon wafers without cleaning, specifically including the following steps:

[0040] S1. Adhesive process: First, use the iron plate adhesive (2) to bond the plastic plate (4) to the iron plate, and then use the stick adhesive (3) to bond the single crystal square rod (6) to the plastic plate.

[0041] S2, Cutting process: After the bonded silicon rod is cured for ≥2H, it is transported to the slicing machine and cut into silicon wafers using diamond wire. The silicon rod is cut for 130 minutes to complete the cutting. The silicon rod is cut into 4500 ultra-thin single crystal silicon wafers with a thickness of 130 micrometers. The crystal support iron plate (1) is taken off the machine to the degumming fixture and transported to the degumming process for degumming.

[0042] S3. Ultrasonic cleaning and debonding process: The first and second tanks are ultrasonic cleaning tanks, which mainly use ultrasonic cleaning technology to clean the silicon wafers in detail and remove stubborn dirt from the silicon wafers; the third, fourth and fifth tanks are high temperature debonding tanks for debonding agents, which use debonding agents to debond the silicon wafers at high temperature so that the ultra-thin single crystal silicon wafers (5) can be separated from the mounting plate.

[0043] The adhesive stick consists of component A and component B, which, by weight, include 150 parts epoxy resin, 20 parts ester, 2 parts defoamer, 1 part coupling agent, 0.1 parts diluent, 30 parts filler, 5 parts adhesion promoter, and 5 parts acid-sensitive material; component B includes 120 parts curing agent, 30 parts ester, 15 parts polyamide, 6 parts diluent, and 30 parts filler.

[0044] Example 2

[0045] This embodiment provides a method for removing residual adhesive during the de-adhesive removal process of ultrathin single-crystal silicon wafers without cleaning the adhesive residue, specifically including the following steps:

[0046] S1. Adhesive process: First, use adhesive for iron plates to bond the plastic plate to the iron plate, and then use adhesive for sticks to bond the single crystal square rod to the plastic plate.

[0047] S2. Cutting process: After the bonded silicon rod has been cured for ≥2 hours, it is transported to the slicing machine and cut into silicon wafers using diamond wire. The silicon rod is cut for 130 minutes to complete the cutting and cut the silicon rod into 4500 ultra-thin single crystal silicon wafers with a thickness of 130 micrometers. The crystal support iron plate is removed from the machine and transported to the debonding fixture for debonding.

[0048] S3. Ultrasonic cleaning and debonding process: The first and second tanks are ultrasonic cleaning tanks, which mainly use ultrasonic cleaning technology to thoroughly clean the silicon wafers and remove stubborn dirt from them; the third, fourth and fifth tanks are high-temperature debonding tanks, which use debonding agents to debond the silicon wafers at high temperatures so that the ultra-thin single crystal silicon wafers can be separated from the mounting plate.

[0049] The adhesive stick consists of component A and component B, which, by weight, include 150 parts epoxy resin, 20 parts ester, 2 parts defoamer, 1 part coupling agent, 0.1 parts diluent, 30 parts filler, 3 parts adhesion promoter, and 5 parts acid-sensitive material; component B includes 120 parts curing agent, 30 parts ester, 15 parts polyamide, 6 parts diluent, and 30 parts filler.

[0050] Example 3

[0051] This embodiment provides a method for removing residual adhesive during the de-adhesive removal process of ultrathin single-crystal silicon wafers without cleaning the adhesive residue, specifically including the following steps:

[0052] S1. Adhesive process: First, use adhesive for iron plates to bond the plastic plate to the iron plate, and then use adhesive for sticks to bond the single crystal square rod to the plastic plate.

[0053] S2. Cutting process: After the bonded silicon rod has been cured for ≥2 hours, it is transported to the slicing machine and cut into silicon wafers using diamond wire. The silicon rod is cut for 130 minutes to complete the cutting and cut the silicon rod into 4500 ultra-thin single crystal silicon wafers with a thickness of 130 micrometers. The crystal support iron plate is removed from the machine and transported to the debonding fixture for debonding.

[0054] S3. Ultrasonic cleaning and debonding process: The first and second tanks are ultrasonic cleaning tanks, which mainly use ultrasonic cleaning technology to thoroughly clean the silicon wafers and remove stubborn dirt from them; the third, fourth and fifth tanks are high-temperature debonding tanks, which use debonding agents to debond the silicon wafers at high temperatures so that the ultra-thin single crystal silicon wafers can be separated from the mounting plate.

[0055] The adhesive stick consists of component A and component B, which, by weight, include 150 parts epoxy resin, 20 parts ester, 2 parts defoamer, 1 part coupling agent, 0.1 parts diluent, 30 parts filler, 5 parts adhesion promoter, and 3 parts acid-sensitive material; component B includes 120 parts curing agent, 30 parts ester, 15 parts polyamide, 6 parts diluent, and 30 parts filler.

[0056] Comparative Example 1

[0057] This embodiment provides a method for removing residual adhesive during the de-adhesive removal process of ultrathin single-crystal silicon wafers without cleaning the adhesive residue, specifically including the following steps:

[0058] S1. Adhesive process: First, use adhesive for iron plates to bond the plastic plate to the iron plate, and then use adhesive for sticks to bond the single crystal square rod to the plastic plate.

[0059] S2. Cutting process: After the bonded silicon rod has been cured for ≥2 hours, it is transported to the slicing machine and cut into silicon wafers using diamond wire. The silicon rod is cut for 130 minutes to complete the cutting and cut the silicon rod into 4500 ultra-thin single crystal silicon wafers with a thickness of 130 micrometers. The crystal support iron plate is removed from the machine and transported to the debonding fixture for debonding.

[0060] S3. Ultrasonic cleaning and debonding process: The first and second tanks are ultrasonic cleaning tanks, which mainly use ultrasonic cleaning technology to thoroughly clean the silicon wafers and remove stubborn dirt from them; the third, fourth and fifth tanks are high-temperature debonding tanks, which use debonding agents to debond the silicon wafers at high temperatures so that the ultra-thin single crystal silicon wafers can be separated from the mounting plate.

[0061] The adhesive stick consists of component A and component B, which, by weight, include 150 parts epoxy resin, 20 parts ester, 2 parts defoamer, 1 part coupling agent, 0.1 parts diluent, 30 parts filler, 5 parts adhesion promoter, and 1 part acid-sensitive material; component B includes 120 parts curing agent, 30 parts ester, 15 parts polyamide, 6 parts diluent, and 30 parts filler.

[0062] Comparative Example 2

[0063] This embodiment provides a method for removing residual adhesive during the de-adhesive removal process of ultrathin single-crystal silicon wafers without cleaning the adhesive residue, specifically including the following steps:

[0064] S1. Adhesive process: First, use adhesive for iron plates to bond the plastic plate to the iron plate, and then use adhesive for sticks to bond the single crystal square rod to the plastic plate.

[0065] S2. Cutting process: After the bonded silicon rod has been cured for ≥2 hours, it is transported to the slicing machine and cut into silicon wafers using diamond wire. The silicon rod is cut for 130 minutes to complete the cutting and cut the silicon rod into 4500 ultra-thin single crystal silicon wafers with a thickness of 130 micrometers. The crystal support iron plate is removed from the machine and transported to the debonding fixture for debonding.

[0066] S3. Ultrasonic cleaning and debonding process: The first and second tanks are ultrasonic cleaning tanks, which mainly use ultrasonic cleaning technology to thoroughly clean the silicon wafers and remove stubborn dirt from them; the third, fourth and fifth tanks are high-temperature debonding tanks, which use debonding agents to debond the silicon wafers at high temperatures so that the ultra-thin single crystal silicon wafers can be separated from the mounting plate.

[0067] The adhesive stick consists of component A and component B, which, by weight, include 150 parts epoxy resin, 20 parts ester, 2 parts defoamer, 1 part coupling agent, 0.1 parts diluent, 30 parts filler, 5 parts adhesion promoter, and 12 parts acid-sensitive material; component B includes 120 parts curing agent, 30 parts ester, 15 parts polyamide, 6 parts diluent, and 30 parts filler.

[0068] Comparative Example 3

[0069] This embodiment provides a method for removing residual adhesive during the de-adhesive removal process of ultrathin single-crystal silicon wafers without cleaning the adhesive residue, specifically including the following steps:

[0070] S1. Adhesive process: First, use adhesive for iron plates to bond the plastic plate to the iron plate, and then use adhesive for sticks to bond the single crystal square rod to the plastic plate.

[0071] S2. Cutting process: After the bonded silicon rod has been cured for ≥2 hours, it is transported to the slicing machine and cut into silicon wafers using diamond wire. The silicon rod is cut for 130 minutes to complete the cutting and cut the silicon rod into 4500 ultra-thin single crystal silicon wafers with a thickness of 130 micrometers. The crystal support iron plate is removed from the machine and transported to the debonding fixture for debonding.

[0072] S3. Ultrasonic cleaning and debonding process: The first and second tanks are ultrasonic cleaning tanks, which mainly use ultrasonic cleaning technology to thoroughly clean the silicon wafers and remove stubborn dirt from them; the third, fourth and fifth tanks are high-temperature debonding tanks, which use debonding agents to debond the silicon wafers at high temperatures so that the ultra-thin single crystal silicon wafers can be separated from the mounting plate.

[0073] The adhesive stick consists of component A and component B, which, by weight, include 150 parts epoxy resin, 20 parts ester, 2 parts defoamer, 1 part coupling agent, 0.1 parts diluent, 30 parts filler, 1 part adhesion promoter, and 5 parts acid-sensitive material; component B includes 120 parts curing agent, 30 parts ester, 15 parts polyamide, 6 parts diluent, and 30 parts filler.

[0074] Comparative Example 4

[0075] This embodiment provides a method for removing residual adhesive during the de-adhesive removal process of ultrathin single-crystal silicon wafers without cleaning the adhesive residue, specifically including the following steps:

[0076] S1. Adhesive process: First, use adhesive for iron plates to bond the plastic plate to the iron plate, and then use adhesive for sticks to bond the single crystal square rod to the plastic plate.

[0077] S2. Cutting process: After the bonded silicon rod has been cured for ≥2 hours, it is transported to the slicing machine and cut into silicon wafers using diamond wire. The silicon rod is cut for 130 minutes to complete the cutting and cut the silicon rod into 4500 ultra-thin single crystal silicon wafers with a thickness of 130 micrometers. The crystal support iron plate is removed from the machine and transported to the debonding fixture for debonding.

[0078] S3. Ultrasonic cleaning and debonding process: The first and second tanks are ultrasonic cleaning tanks, which mainly use ultrasonic cleaning technology to thoroughly clean the silicon wafers and remove stubborn dirt from them; the third, fourth and fifth tanks are high-temperature debonding tanks, which use debonding agents to debond the silicon wafers at high temperatures so that the ultra-thin single crystal silicon wafers can be separated from the mounting plate.

[0079] The adhesive stick consists of component A and component B, which, by weight, include 150 parts epoxy resin, 20 parts ester, 2 parts defoamer, 1 part coupling agent, 0.1 parts diluent, 30 parts filler, 10 parts adhesion promoter, and 5 parts acid-sensitive material; component B includes 120 parts curing agent, 30 parts ester, 15 parts polyamide, 6 parts diluent, and 30 parts filler.

[0080] The examples and comparative examples were tested, and the results showed that the amount of adhesion promoter and acid-sensitive material added affected the debonding effect. The appropriate amount of adhesion promoter and acid-sensitive material added significantly improved the debonding effect of silicon wafers. The test results showed that the number of debonding cuts in the embodiments of the present invention could be increased to 300-350 cuts, the agent consumption per cut decreased from 0.16 kg / cut to 0.10 kg / cut, a reduction of 37.5%; the cleaning tank time was reduced to 5-10 s, the soaking time was reduced to 100 s, the debonding time was reduced to 180 s, the debonding temperature was reduced to 60°C, the debonding time was reduced to 470 s, and the single-cut debonding time was reduced by 140 s, a reduction of 23%.

[0081] In summary, this invention reduces the labor intensity of employees by adjusting the adhesive properties to achieve no adhesive residue after degumming, eliminating the need for employees to wipe off the adhesive and reducing their workload. This invention also improves degumming efficiency by optimizing the degumming agent's performance, enhancing its penetration into the wafer after it has been removed from the ingot, thus achieving rapid, efficient, and low-temperature degumming. Furthermore, this invention reduces reagent consumption. An initial addition of degumming agent is used, and as the number of degumming passes increases, the acidity decreases, allowing for appropriate replenishment of the agent to improve degumming performance and extend the number of passes, thereby reducing reagent consumption. This invention also improves degumming efficiency and optimizes the degumming process by comprehensively matching soaking time, degumming time, and degumming temperature, taking into account the cleanliness of the silicon wafer after it has been removed from the ingot. Based on innovative optimizations of the adhesive and degumming agent properties, this invention ensures smooth separation of the silicon wafer from the ingot adhesive, workpiece board, and resin board during the degumming process. The proportion of residual adhesive threads on the silicon wafer surface and chamfered edges decreases from 20% to 0.05%, essentially achieving a no-wipe degumming effect.

[0082] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the protection scope of the present invention. Therefore, the protection scope of this invention patent should be determined by the appended claims.

Claims

1. A method for removing residual adhesive during the debinding process of ultrathin single-crystal silicon wafers without cleaning, characterized in that, Specifically, the following steps are included: S1. Adhesive process: First, use adhesive for iron plates to bond the plastic plate to the iron plate, and then use adhesive for sticks to bond the single crystal square rod to the plastic plate. S2. Cutting process: After the bonded silicon rod has been cured for ≥2 hours, it is transported to the slicing machine and cut into silicon wafers using diamond wire. The silicon rod is cut for 110-150 minutes to complete the cutting. The silicon rod is cut into 4200-4800 ultra-thin single crystal silicon wafers with a thickness of 110-130 micrometers. The crystal support iron plate is removed from the machine and transported to the debonding fixture for debonding. S3. Ultrasonic cleaning and debonding process: The first and second tanks are ultrasonic cleaning tanks, which mainly use ultrasonic cleaning technology to thoroughly clean the silicon wafers and remove stubborn dirt from them; the third, fourth and fifth tanks are high-temperature debonding tanks, which use debonding agents to debond the silicon wafers at high temperatures so that the ultra-thin single crystal silicon wafers can be separated from the mounting plate.

2. The method for removing residual adhesive in the debonding process of ultrathin single-crystal silicon wafers as described in claim 1, characterized in that, The adhesive stick is composed of component A and component B. By weight, component A includes 100-250 parts epoxy resin, 15-30 parts ester, 0.1-9 parts defoamer, 0.01-3 parts coupling agent, 0.01-2 parts diluent, 12-55 parts filler, 2-8 parts adhesion promoter, and 3-10 parts acid-sensitive material; component B includes 100-160 parts curing agent, 10-50 parts ester, 7-30 parts polyamide, 5-10 parts diluent, and 20-50 parts filler.

3. The method for removing residual adhesive during the debonding process of ultrathin single-crystal silicon wafers as described in claim 2, characterized in that, The filler is selected from one or more of magnesium silicate, calcium carbonate, and aluminum hydroxide.

4. The method for removing residual adhesive during the debonding process of ultrathin single-crystal silicon wafers as described in claim 2, characterized in that... The acid-sensitive material is selected from 1-propanethiol or 1,3-propanedithiol.

5. The method for removing residual adhesive during the debonding process of ultrathin single-crystal silicon wafers as described in claim 2, characterized in that, The adhesion promoter is mainly an epoxy-based wetting agent, which is selected from methylsilane or ethylsilane.

6. The method for removing residual adhesive in the debonding process of ultrathin single-crystal silicon wafers as described in claim 2, characterized in that, The epoxy resin is a bisphenol A epoxy resin, and the bisphenol A epoxy resin is selected from one or more of E-51, E-55, and E-56.

7. The method for removing residual adhesive during the debonding process of ultrathin single-crystal silicon wafers as described in claim 2, characterized in that, The curing agent is selected from polythiol 3830 or polythiol JH-3381.

8. The method for removing residual adhesive in the debonding process of ultrathin single-crystal silicon wafers as described in claim 1, characterized in that, The degumming agent, by mass percentage, comprises 20% citric acid, 55% lactic acid, and 25% compound surfactant, wherein the compound surfactant mainly includes penetrants and dispersants.

9. A method for removing residual adhesive during the debonding process of ultrathin single-crystal silicon wafers as described in claim 1, characterized in that, In the degumming process, 25 kg of degumming agent is added in a single tank, and 10 kg of agent is added after 150 cuts, increasing the number of degumming cuts to 300-350.

10. A method for removing residual adhesive during the debonding process of ultrathin single-crystal silicon wafers as described in claim 1, characterized in that, The cleaning tank time is reduced to 5-10 seconds, the soaking time is reduced to 100 seconds, the degumming time is reduced to 180 seconds, the degumming temperature is reduced to 60°C, the degumming time is reduced to 470 seconds, and the single-blade degumming time is reduced by 140 seconds.

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