Variable pressure dosing method and system

Abstract

A method of depositing a material and a system for depositing a material are disclosed. An exemplary method includes dosing a precursor and / or reactant to a substrate while changing a pressure within a reaction chamber.

Description

Technical Field

[0001] This disclosure generally relates to methods and apparatus for gas-phase processes. More specifically, this disclosure relates to a gas-phase method for depositing material within gaps on a substrate surface and a reactor system for performing this method. Background Technology

[0002] Vapor-phase processes such as chemical vapor deposition (CVD), plasma-enhanced CVD (PECVD), and atomic layer deposition (ALD) are commonly used to deposit materials onto substrate surfaces, etch materials from substrate surfaces, and / or clean or process substrate surfaces. For example, vapor-phase processes can be used to deposit material layers on substrates to form semiconductor devices, flat panel display devices, photovoltaic devices, microelectromechanical systems (MEMS), etc.

[0003] In some cases, it may be desirable to fill gaps (e.g., vias or trenches) on the substrate surface with materials such as conductive or dielectric materials. As device feature sizes typically continue to shrink, filling gaps with materials that have the desired material properties and filling characteristics (e.g., few or no gaps and / or voids formed) becomes increasingly difficult. This is especially true when attempting to fill gaps using conformal deposition techniques for highly stacked memory structures—particularly when the number of layers, vias, and / or aspect ratio of features (such as gaps) increases.

[0004] Techniques for improving the filling of gaps on substrate surfaces include increasing the amount of precursors and / or reactants provided during the deposition process and operating the deposition process under relatively high pressure. While such techniques can be used in some applications, they may increase operating costs and / or have limited ability to fill gaps with materials having the desired properties. Therefore, improved methods and reactor systems for depositing materials within gaps on substrate surfaces are desired.

[0005] Any discussion of problems and solutions in this section is for the purpose of providing background to this disclosure only; such discussion should not be construed as an admission that any or all of the discussions were known at the time of making this invention. Summary of the Invention

[0006] This section introduces some concepts in a simplified form, which will be described in further detail below. The content of this invention is not intended to require identification of key or essential features of the claimed subject matter, nor is it intended to limit the scope of the claimed subject matter.

[0007] Various embodiments of this disclosure provide methods and reactor systems for depositing materials on a substrate surface. As described in more detail below, exemplary methods and reactor systems are particularly suitable for processes that deposit materials within gaps (e.g., conformally) on a substrate surface.

[0008] According to various embodiments of this disclosure, a method of depositing material in a gap on a substrate surface includes: providing a substrate in a reaction chamber of a reactor; using a vacuum source, reducing the pressure in the reaction chamber to a first pressure (P1); increasing the pressure in the reaction chamber from P1 toward a second pressure (P2); and simultaneously increasing the pressure toward P2 while pulsed a precursor into the reaction chamber during a precursor pulse period. According to various examples, the pressure in the reaction chamber continues to increase after the precursor pulse period. According to another example, the pressure in the reaction chamber increases continuously during a pressurization period. The pressurization period may be, for example, between about 1 second and about 10 seconds, or between about 1 second and about 5 seconds. In at least some cases, the pressurization step begins before the step of pulsed a precursor into the reaction chamber. The method may further include reducing the pressure in the reaction chamber to P3, and after the step of reducing the pressure in the reaction chamber to P3, increasing the pressure in the reaction chamber to P4. The method may be or includes a thermal cycling deposition process. The material may be or includes a metal or a dielectric material.

[0009] According to another embodiment, a reactor system includes one or more reaction chambers, a precursor gas source, a reactant gas source, a vacuum source, and a controller. The controller may be configured to cause the reactor system to perform the methods described herein.

[0010] The foregoing description and the following detailed description are merely exemplary and illustrative, and do not limit the scope of this disclosure or the claimed invention. Attached Figure Description

[0011] Exemplary embodiments of this disclosure can be more fully understood when considered in conjunction with the following illustrative drawings, and by referring to the detailed description and claims.

[0012] Figure 1 Methods according to various embodiments of this disclosure are illustrated.

[0013] Figure 2 A sequence of steps according to another exemplary embodiment of this disclosure is shown.

[0014] Figure 3 A reactor system according to another exemplary embodiment of the present disclosure is shown.

[0015] It should be understood that the elements in the accompanying drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the dimensions of some elements may be exaggerated relative to other elements to aid in understanding the embodiments shown in this disclosure. Detailed Implementation

[0016] The following description of exemplary embodiments is merely illustrative and for purposes of explanation only; the following description is not intended to limit the scope of this disclosure or the claims. Furthermore, the description of multiple embodiments having the described features is not intended to exclude other embodiments having additional features or other embodiments including different combinations of the described features.

[0017] As described in more detail below, various embodiments of this disclosure relate to a method for depositing material within gaps on a substrate surface. This method can be used to deposit materials for a variety of applications, such as forming semiconductor devices, like memory devices. However, unless otherwise stated, the invention is not necessarily limited to these examples.

[0018] As used herein, the term substrate can refer to any one or more underlying materials, including and / or on which one or more layers may be deposited. A substrate may include a bulk material, such as silicon (e.g., single-crystal silicon), other group IV materials, such as germanium, or compound semiconductor materials, such as GaAs, and may include one or more layers covering or located beneath the bulk material. For example, a substrate may include a patterned stack of several layers covering the bulk material. The patterned stack may vary depending on the application. Furthermore, a substrate may include various gaps formed on the substrate surface, such as recesses, vias, spaces between lines, trenches, etc.

[0019] In some embodiments, the term membrane refers to a layer extending in a direction perpendicular to the thickness direction. In some embodiments, a layer refers to a material or membrane or non-membrane structure of a certain thickness formed on a surface. A membrane or layer may consist of discrete single membranes or layers or multiple membranes or layers having certain properties, and the boundaries between adjacent membranes or layers may or may not be clear, and may be established based on or not based on the physical, chemical and / or any other properties, formation process or sequence and / or function or purpose of adjacent membranes or layers. Furthermore, layers or membranes may be continuous or discontinuous.

[0020] In this disclosure, the term "gas" can refer to materials that are gases at room temperature and pressure, evaporated solids and / or evaporated liquids, and may consist of a single gas or a mixture of gases, depending on the circumstances. Gases other than process gases, i.e., gases introduced without passing through gas distribution devices (e.g., spray heads, other gas distribution devices, etc.), may be used, for example, to seal the reaction space, and may include sealing gases, such as rare gases.

[0021] In some contexts, such as in material deposition, the term precursor can refer to a compound that participates in a chemical reaction to produce another compound, particularly a compound that forms the membrane matrix or the membrane backbone. The term reactant, on the other hand, can refer to a compound other than the precursor that reacts with, activates, modifies, or catalyzes the precursor. In some cases, the terms precursor and reactant are used interchangeably. The term inert gas refers to a gas that does not participate in a chemical reaction to a perceptible degree and, unlike reactants, may not become part of the membrane matrix to a perceptible degree.

[0022] The term cyclic deposition process or cyclic deposition process can refer to the sequential introduction of precursors (and / or reactants) into a reaction chamber to deposit a layer on a substrate, and includes processing techniques such as atomic layer deposition (ALD), cyclic chemical vapor deposition (cyclic CVD), and hybrid cyclic deposition processes including ALD and cyclic CVD components. In some cases, inert gases and / or one or more reactants can flow continuously during multiple cycles of the cyclic process, and the precursors can be pulsed. According to examples of this disclosure, the method is a thermal cyclic deposition process. Such processes do not involve using plasma or the like to excite the precursors and / or reactants. Instead, such processes typically employ a substrate heater or other heater to drive the desired reaction.

[0023] In this disclosure, any two numbers of a variable may constitute a feasible range of the variable, and any range indicated may include or exclude endpoints. Additionally, in some embodiments, any value of the indicated variable (whether or not it is indicated by about) may refer to an exact value or an approximate value and include equivalents, and may refer to an average, median, representative value, multi-value, etc. For example, the term about may refer to a value + / - 20%, 10%, 5%, 2%, or 1%. Furthermore, in this disclosure, the terms “comprising,” “consisting of,” and “having,” and their equivalents, in some embodiments may independently refer to generally or broadly comprising, including, substantially consisting of, or composed of. According to various aspects of this disclosure, the meaning of any definition of a term does not necessarily exclude the common and customary meaning of the term.

[0024] Now turn to the attached image. Figure 1A method 100 for depositing material (e.g., conformally) within gaps on a substrate surface according to an embodiment of the present disclosure is illustrated. Method 100 includes the steps of: providing a substrate in a reaction chamber of a reactor (step 102), reducing the pressure in the reaction chamber to a first pressure (P1) (step 104), increasing the pressure in the reaction chamber from P1 toward a second pressure (P2) (step 106), and pulsed a precursor into the reaction chamber during a precursor pulse period (step 108). As shown, method 100 may further include reducing the pressure in the reaction chamber to a third pressure (P3) (step 110), increasing the pressure in the reaction chamber from P3 toward a fourth pressure (P4) (step 112), and / or providing reactants to the reaction chamber (step 114). Method 100 can be suitably used to fill gaps with material—e.g., with relatively few gaps or voids formed or no gaps or voids formed.

[0025] During step 102, a substrate is provided in the reaction chamber. The reaction chamber used during step 102 may be or include the reaction chamber of a chemical vapor deposition reactor system configured to perform a cyclic deposition process. The reaction chamber may be a standalone reaction chamber or part of a cluster of tools.

[0026] Step 102 may include heating the substrate to a desired deposition temperature within the reaction chamber. In some embodiments of this disclosure, step 102 includes heating the substrate to a temperature below 800°C. For example, in some embodiments of this disclosure, heating the substrate to the deposition temperature may include heating the substrate to the following temperatures: between about 20°C and about 900°C, below 650°C, below 600°C, below 550°C, below 500°C, between about 300°C and 600°C, between about 300°C and 650°C, between about 300°C and 550°C, between about 300°C and 500°C, or between about 300°C and 450°C.

[0027] In addition to controlling the temperature of the substrate, the pressure inside the reaction chamber can also be adjusted. For example, in some embodiments of this disclosure, the pressure inside the reaction chamber during step 102 and / or at the start of step 104 may be less than 760 Torr, or between about 0.2 and about 300 Torr, about 5 and about 250 Torr, or about 50 and about 120 Torr.

[0028] During step 104, the pressure inside the reaction chamber is reduced to a first pressure (P1)—for example, using a vacuum source, such as the one described below. The pressure can be reduced to less than 100 Torr or between about 0.001 and about 50 Torr, between about 0.005 and about 25 Torr, between about 0.01 Torr and 20 Torr, or between about 0.5 Torr and 10 Torr. The temperature inside the reaction chamber can be the same as or similar to the temperature during step 102.

[0029] According to an example of this disclosure, the pressure inside the reaction chamber is reduced by (e.g., further) opening throttle valves downstream of the reaction chamber and upstream of the vacuum source. According to another example, the throttle valves are opened by a command from a controller to control the pressure inside the reaction chamber to P1, as described above.

[0030] During step 106, the pressure inside the reaction chamber increases from P1 toward a second pressure (P2). In some cases, P2 may be the same as or similar to the pressure inside the reaction chamber during step 102. As a specific example, P2 is between about 60 tort and 100 tort, or between about 70 tort and 90 tort. According to another specific example, P1 is less than 20 tort (e.g., between about 0.01 tort and 20 tort, or between about 0.5 tort and 10 tort), and P2 is greater than 60 tort (e.g., between about 60 tort and 100 tort, or between about 70 tort and 90 tort). According to another example, P2 is greater than or equal to two, five, seven, or ten times P1. In some cases, the reaction chamber may not reach P2 during steps 106 and / or 108. In some cases, a command from the controller may attempt to control the pressure to P2 using a throttle valve.

[0031] During step 108, the precursor and / or reactant are pulsed into the reaction chamber during a precursor pulse period. The examples described below relate to precursor pulses. However, the examples are not limited thereto, and the pulses described below may additionally or alternatively include reactants.

[0032] According to the example, the precursor is pulsed into the reaction chamber while the pressure is increased toward P2. According to the example of this disclosure, step 106 begins before step 108. According to another example, as combined below… Figure 2 In more detail, steps 106 and 108 overlap. According to another example, after the precursor pulse step 108 has ended, the pressure in the reaction chamber continues to increase during step 106. According to another example, the pressure in the reaction chamber increases continuously during a pressurization period in step 106. The pressurization period may be the period during which the controller sends a signal to the throttle valve to control the pressure in the reaction chamber, which is P1, to pressure P2. Alternatively, the pressurization period may begin from the time when the throttle valve begins to control the pressure from P1 towards P2. The duration of the pressurization period may be between approximately 1 second and approximately 10 seconds, or between approximately 1 second and approximately 5 seconds.

[0033] The duration of the precursor pulse period can be shorter than the pressurization period. For example, the duration of the precursor pulse period can be between approximately 1% and 90% of the pressurization period, or between approximately 5% and 30%, or between approximately 10% and 20%. For instance, the precursor pulse period can be between approximately 0.2 seconds and approximately 10 seconds, or between approximately 0.3 seconds and approximately 2 seconds.

[0034] After step 106 and / or after step 108, method 100 may include step 110 of reducing the pressure inside the reaction chamber to a third pressure (P3). P3 may, for example, be approximately the same as P1. During or at the beginning of step 110, the controller may send a signal to a throttle valve to control the pressure inside the reaction chamber, for example, by opening the throttle valve. This step may be used, for example, to purge the reaction chamber.

[0035] Following step 110, method 100 may include step 112, which involves increasing the pressure within the reaction chamber toward P4. Step 112 may be used to prepare the reaction chamber for the next step, such as repeating steps 104-108 or 110, or providing reactants.

[0036] Although not shown separately, method 100 may include a step of reducing the pressure inside the reaction chamber after step 112 and before step 114. This step of reducing the pressure inside the reaction chamber after step 112 may be the same as or similar to step 104. For example, the pressure may be reduced to the pressure mentioned above in conjunction with P1.

[0037] During step 114, reactants may be supplied to the reaction chamber. Step 114 may be similar to step 108, except that reactants are supplied to the reaction chamber instead of precursors. In some cases, step 114 may differ from step 108. For example, during step 114, the pressure inside the reaction chamber may remain substantially constant rather than increase. In other cases, step 114 may include (e.g., continuously) increasing the pressure (e.g., toward P2 or P4) and optionally continuing after a pulse of reactants—e.g., as described above in the case of precursor pulses. P4 may be within the range of P2, as described above. In some cases, P4 may be the same as P2.

[0038] Method 100 can be used to deposit a variety of materials. For example, method 100 can be used to deposit metals or dielectric materials.

[0039] Exemplary metals that can be deposited using method 100 include transition metals such as molybdenum, tungsten, tantalum, titanium, niobium, scandium, etc. Exemplary precursors for depositing the metal include metal halides and / or halide oxides that may contain such metals. Specific examples include metal chlorides and metal chloride oxides, such as titanium tetrachloride. Exemplary reactants for depositing the metal include a reducing agent. Exemplary reducing agents include one or more of the following: synthesis gas (H2+N2), ammonia (NH3), hydrazine (N2H4), alkyl hydrazine (e.g., tert-butylhydrazine (C4H4)). 12 N2), molecular hydrogen (H2), hydrogen atom (H), hydrogen plasma, hydrogen free radical, hydrogen excitation substance, (e.g., C1-C4) alcohol, (e.g., C1-C4) aldehyde, (e.g., C1-C4) carboxylic acid, (e.g., B1-B) 12) Borane or amine.

[0040] Exemplary dielectric materials that can be deposited using method 100 include high-k materials (e.g., dielectric constants higher than silicon oxide), such as metal oxide dielectric materials. Exemplary metal oxide dielectric materials include transition metal oxides and post-transition metal oxides. Specific examples include alumina, titanium oxide, etc. Exemplary precursors for depositing dielectric materials include organometallic compounds, such as C1-C4 alkyl organometallic compounds (e.g., trimethylaluminum). Exemplary reactants for depositing dielectric materials include oxidizing agents, nitriding agents, and / or carbide agents.

[0041] Exemplary oxidants include one or more of the following: O2, water (H2O), hydrogen peroxide (H2O2), ozone (O3), and nitrogen oxides (e.g., nitric oxide (NO), nitrous oxide (N2O), and nitrogen dioxide (NO2)).

[0042] Exemplary nitriding agents may be selected from one or more of the following: nitrogen (N2), ammonia (NH3), hydrazine (N2H4) or hydrazine derivatives, mixtures of hydrogen and nitrogen, nitrogen ions, nitrogen radicals and excited nitrogen substances, and other nitrogen- and hydrogen-containing gases. Nitrogen reactants may include nitrogen and hydrogen or consist of the same. In some cases, nitrogen reactants do not include diatomic nitrogen.

[0043] Exemplary carbonizing agents include acetylene, ethylene, alkyl halides, alkenyl halides, and metal alkyl compounds. Exemplary alkyl halides include CX4, CHX3, CH2X2, and CH3X, where X = F, Cl, Br, or I. Exemplary alkenyl halides include C2H3X, C2H2X2, C2HX3, and C2X4, where X = F, Cl, Br, or I. Exemplary acetylene halides include C2X2 and HC2X, where X = F, Cl, Br, or I. Exemplary metal alkyl compounds include AlMe3, AlEt3, Al(iPr)3, Al(iBu)3, Al(tBu)3, GaMe3, GaEt3, Ga(iPr)3, Ga(iBu)3, Ga(tBu)3, InMe3, InEt3, In(iPr)3, In(iBu)3, In(tBu)3, ZnMe2, and ZnEt2.

[0044] Figure 2 The following sequence of steps, suitable for use with method 100, is illustrated: valve position (line 202), reaction chamber pressure (line 204), and precursor / reactant dosing (line 206). Valve position can be represented by 0 for closing and 100 for fully opening. In the example shown, chamber pressure is expressed in Torr. Precursor and / or reactant dosing is expressed on a scale of 0 to 1, where 0 represents essentially no flow and 1 represents full flow.

[0045] As shown in the figure, during time period T1, the valve (e.g., throttling) opens, and the pressure inside the reaction chamber decreases to P1. During time period T2, the valve closes at least partially, and the pressure inside the reaction chamber increases toward P2, which may be the same as P4. During T2, precursors and / or reactants can be pulsed into the reaction chamber during the dosing period, as described above. During T3, the pressure inside the reaction chamber can decrease to pressure P3—e.g., by opening the valve. During T4, the pressure inside the reaction chamber can increase to P4 by closing the valve.

[0046] Figure 3 An exemplary reactor system 300 according to another exemplary embodiment of the present disclosure is shown. The reactor system 300 includes a reactor 302, a base 304, gas sources 306-310, a gas distribution device 320, a vacuum source 312, and a controller 322. Although not shown, the reactor system 300 may additionally include direct and / or remote plasma and / or thermal excitation devices for one or more reactants and / or within the reactor 302.

[0047] Reactor 302 may include a reaction chamber 324 suitable for gas-phase reactions. Reactor 302 may be formed of a suitable material, such as quartz, metal, etc., and may be configured to hold one or more substrates for processing. Reactor system 300 may include any suitable number of reactors 302 and may optionally include one or more substrate handling systems. Reactor 302 may be a standalone reactor or part of a cluster of equipment.

[0048] Reactor 302 can be configured as a circulating deposition process reactor (e.g., a circulating CVD reactor), an ALD reactor, etc. Reactor 302 can be configured to deposit various membranes or layers, such as those mentioned above.

[0049] The base 304 is configured to hold the substrate 326 in place during processing. During processing, one or more sections of the base 304 may be heated, cooled, or placed at ambient processing temperature. According to examples of this disclosure, the base 304 includes temperature control means 328, such as a heater (e.g., a resistance heater) and / or cooling means (e.g., conduits for a cooling medium such as chilled water).

[0050] In the example shown, reactor system 300 includes a mechanism 330 for moving base 304 from lower chamber region 332 to upper chamber region 334. Mechanism 330 may include any suitable device capable of moving base 304. For example, mechanism 330 includes a servo motor to drive base 304 along a vertical axis. Mechanism 330 may be suitably located outside reaction chamber 324.

[0051] The base 304 can be formed of any suitable material, such as ceramic materials, boron nitride, aluminum nitride, quartz, and ceramic-coated materials, such as ceramic-coated metals. The base 304 may also include a resistance heating material. Exemplary materials suitable for resistance heating include tungsten (W), nickel-chromium alloy (NiCr), copper-nickel alloy (CuNi), graphite, molybdenum disilicide (MoSi2), or any other suitable heater material. The resistance heating material can be coated (e.g., patterned) onto, for example, ceramic or ceramic-coated metal. The base 304 may include an additional protective layer covering the resistance heating material. The protective layer may be formed of, for example, a ceramic material.

[0052] Gas sources 306-310 may include any suitable container and the corresponding material contained therein. For example, gas source 306 may include a precursor, gas source 308 may include a reactant, and gas source 310 may include an inert gas. Gas sources 306-310 may be connected to reaction chamber 324 via gas distribution device 320.

[0053] Gas distribution device 320 is configured to receive one or more gases during substrate processing and facilitate their distribution to reaction chamber 324. Gas distribution device 320 may include inlet 333 and a plurality of orifices 335 coupled to gas collection chamber 336.

[0054] Vacuum source 312 may include one or more vacuum sources. Exemplary vacuum sources include one or more dry vacuum pumps and / or one or more turbomolecular pumps. (e.g., throttling) valve 338 may be in the line that fluidly connects reaction chamber 324 to vacuum source 312.

[0055] Controller 322 can be configured to perform various functions and / or steps as described herein. For example, controller 322 can be configured to perform a combination of Figure 1 The methods and / or combinations described Figure 2 The sequence described herein. Controller 322 may include one or more microprocessors, memory elements, and / or switching elements to perform various functions. Although shown as a single unit, controller 322 may alternatively include multiple devices. For example, controller 322 may be used to control the flow of one or more gases from sources 306-310 via one or more lines 314, 316, 318 and valves 342, 344, 346 to move base 304 between first positions to control pressure within reaction chamber 324 (e.g., using valve 338), and / or pulse reactants and / or precursors (e.g., using one or more valves 342-346), as described herein.

[0056] While exemplary embodiments of this disclosure are set forth herein, it should be understood that this disclosure is not limited thereto. For example, although components, reactors, systems, and methods are described in conjunction with various specific configurations, this disclosure is not necessarily limited to these examples. Various modifications, variations, and enhancements may be made to the exemplary components, reactors, systems, and methods set forth herein without departing from the spirit and scope of this disclosure.

[0057] The subject matter of this disclosure includes all novel and non-obvious combinations and sub-combinations of the various steps, systems, components, reactors, parts and configurations disclosed herein, as well as any and all equivalents thereof.

Claims

1. A method for depositing material within gaps on a substrate surface, the method comprising: A substrate is provided within the reaction chamber of the reactor; Using a vacuum source, the pressure inside the reaction chamber is reduced to the first pressure (P1); Increase the pressure in the reaction chamber from P1 toward the second pressure (P2); as well as While increasing the pressure toward P2, the precursor is pulsed into the reaction chamber during the precursor pulse period.

2. The method according to claim 1, wherein, Following the precursor pulse period, the pressure within the reaction chamber continues to increase.

3. The method according to claim 1, wherein, The pressure inside the reaction chamber increases continuously during the pressurization period.

4. The method according to claim 3, wherein, The duration of the pressurization period is between about 1 second and about 10 seconds, or between about 1 second and about 5 seconds.

5. The method according to claim 1, wherein, P2 is greater than or equal to five times P1.

6. The method according to claim 1, wherein, The duration of the precursor pulse period is between about 0.2 seconds and about 10 seconds, or between about 0.3 seconds and about 2 seconds.

7. The method according to claim 1, wherein, P1 is between approximately 0.01 tor and 20 tor, or between approximately 0.5 tor and 10 tor.

8. The method according to claim 1, wherein, P2 is between approximately 60 and 100 tor, or between approximately 70 and 90 tor.

9. The method according to claim 1, wherein, P1 is less than 20 torts and P2 is greater than 60 torts.

10. The method according to claim 1, wherein, The additional step begins before the step of pulsed the precursor into the reaction chamber.

11. The method of claim 1, further comprising the step of reducing the pressure in the reaction chamber to a third pressure (P3) after the step of increasing the pressure in the reaction chamber.

12. The method of claim 11, further comprising the step of increasing the pressure in the reaction chamber to P4 after the step of reducing the pressure in the reaction chamber to P3.

13. The method according to claim 1, wherein, The method described is a thermal cycling deposition process.

14. The method of claim 1, comprising conformally depositing the material within the gap.

15. The method of claim 14, further comprising filling the gap with the material.

16. A method for conformally depositing material within gaps on a substrate surface, the method comprising: A substrate is provided within the reaction chamber of the reactor; Reduce the pressure inside the reaction chamber to the first pressure (P1); Increase the pressure in the reaction chamber from P1 toward the second pressure (P2); as well as While increasing the pressure toward P2, the precursor is pulsed into the reaction chamber during the precursor pulse period.

17. The method according to claim 16, wherein, The pressure inside the reaction chamber increases continuously during the pressurization period.

18. The method according to claim 16, wherein, The material includes metals.

19. The method of claim 16, wherein, The material includes dielectric materials.

20. A reactor system, comprising: A controller configured to perform the method according to claim 16; as well as The reactor.

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