Electron beam detection electron microscope, related equipment module and electron beam scanning imaging method

Abstract

The invention provides an electron beam detection electron microscope, a related equipment module and an electron beam scanning imaging method. The related equipment module comprises electron beam detection control equipment and a detection execution module. In the electron beam detection electron microscope, the electron emission module emits electron beams to a sample to be detected, and the detector module comprises a transmission detection unit and a non-transmission detection unit. The non-transmission detection unit is arranged between the electron emission module and the bearing surface of the sample bearing platform, detects non-transmission signal electrons generated when the electron beam focuses and scans the sample to be detected, and outputs non-transmission detection signals. The transmission detection unit is arranged on one side of the back side surface of the sample bearing platform and is used for detecting and collecting signal electrons of a transmission diffraction image generated by focusing transmission scanning of the sample to be detected by an electron beam and outputting a four-dimensional transmission detection signal, and the electron beam detection control equipment forms a scanning image according to a non-transmission detection signal and the four-dimensional transmission detection signal; the detection efficiency of the material characterization of the to-be-detected sample is effectively improved.

Description

Technical Field

[0001] This application relates to the field of electron scanning technology, and in particular to an electron beam detection electron microscope, an electron beam detection control device, a detection execution module, and an electron beam scanning imaging method. Background Technology

[0002] In the manufacturing process of semiconductor devices, it is necessary to characterize and inspect the materials of the wafers. By analyzing the material characterization of the wafers, defects can be identified and their true causes determined. Charged particle microscopy, represented by electron microscopy, is widely used in the field of semiconductor material characterization and inspection.

[0003] In scanning electron microscopy (SEM), a focused high-energy electron beam is used to scan a semiconductor sample. Through the interaction between the beam and the material, various characteristic electrons, such as secondary electrons and backscattered electrons, are excited. These characteristic electrons are collected, magnified, and re-imaged to characterize the microscopic morphology of the semiconductor sample. Transmission electron microscopy (TEM) uses focused high-energy electrons to perform transmission scanning of the semiconductor sample, creating a four-dimensional (4D) image. Because it can combine imaging, diffraction, and spectral analysis to obtain the nanoscale structure of the semiconductor sample, it is also an important means of characterizing the microstructure of semiconductor devices.

[0004] However, scanning electron microscopes (SEMs) cannot simultaneously perform transmission scanning on the semiconductor sample to obtain a four-dimensional image. Similarly, transmission electron microscopes (TEMs) do not collect secondary electrons or backscattered electrons during transmission scanning. This necessitates the use of different electron microscopes for material characterization of semiconductor samples, resulting in low efficiency and high cost. Summary of the Invention

[0005] To address the aforementioned technical problems, embodiments of this application provide an electron beam detection electron microscope with high detection efficiency, an electron beam detection control device, a detection execution module, and an electron beam scanning imaging method.

[0006] In a first aspect, one embodiment of this application provides an electron beam detector electron microscope, comprising: an electron emission module for emitting an electron beam; a sample support platform including a support surface and a back surface disposed opposite to each other, the support surface facing the electron emission module and used to place the sample to be tested; and a detector module including a transmission detection unit and a non-transmission detection unit. The non-transmission detection unit is disposed between the electron emission module and the support surface, and is used to detect non-transmission signal electrons generated when the electron beam is focused and scanned onto the sample to be tested, and correspondingly outputs a non-transmission detection signal. The transmission detection unit is disposed on one side of the back surface, and is used to detect signal electrons that acquire the transmission diffraction image generated by the electron beam being focused and scanned onto the sample to be tested, and correspondingly outputs a four-dimensional transmission detection signal.

[0007] In one embodiment of this application, the non-transmission detection unit includes at least one of a backscattered electron detection unit, a secondary electron detection unit, and an in-lens detection unit. The backscattered electron detection unit is used to detect and collect backscattered electrons generated when the electron beam is focused and scanned onto the sample under test, and outputs a backscattered signal. The secondary electron detection unit is used to detect and collect secondary electrons generated when the electron beam is focused and scanned onto the sample under test along a first angle, and outputs a secondary electron signal. The in-lens detection unit is used to detect and collect characteristic X-rays generated when the electron beam is focused and scanned onto the sample under test along a second angle, and outputs an in-lens detection signal. The transmission detection unit includes a four-dimensional detection unit that detects and collects signal electrons from the electron transmission diffraction image and correspondingly outputs the four-dimensional transmission detection signal.

[0008] In this embodiment, the electron beam detector electron microscope can simultaneously perform transmission scanning on the sample under test, that is, the signal electrons that generate transmission diffraction images and non-transmission signal electrons on the sample under test when the emitted electron beam is focused on the sample under test. In other words, it can simultaneously detect and collect the backscattered electrons, secondary electrons and transmission diffraction electron images generated when the electron beam is focused on the sample under test in one emission of electron beam, and output the corresponding acquisition signal, so as to form multiple scanning patterns simultaneously in the future, thereby effectively improving the material characterization and detection efficiency.

[0009] In one embodiment of this application, the electron emission module includes an electron emitter, a converging system, a converging aperture, and a scanning coil arranged coaxially in sequence. The electron emitter emits an electron beam, and the converging system and the converging aperture sequentially accelerate the electron beam emitted from the electron emitter. The scanning coil controls the electron beam to perform one-dimensional and two-dimensional transmission scans on the sample under test. In this embodiment, through the cooperation of the electron emitter, the converging system, the converging aperture, and the scanning coil, the electron beam performs transmission scans on the sample under test according to a preset method, thereby accurately and efficiently generating signal electrons.

[0010] In one embodiment of this application, the electron microscope module further includes a first control input interface, a first acquisition output interface, a second acquisition output interface, a third acquisition output interface, and a fourth acquisition output interface. The first control input interface is used to receive instruction information, which includes at least a scanning signal and a sampling signal. The scanning signal is used to control the electron emission module to emit the electron beam to scan the sample under test. The sampling signal is used to control the detector module to collect signal electrons emitted from the sample under test corresponding to the scanning of the electron beam. The signal electrons include a transmission diffraction image, and at least one of the following: backscattered electrons, secondary electrons, and characteristic X-rays. The backscattered electron detection unit is connected to the first acquisition output interface and outputs the backscattered signal from the first acquisition output interface. The secondary electron detection unit is connected to the second acquisition output interface and outputs the secondary electron signal from the second acquisition output interface. The lens-in-the-lens detection unit is connected to the third acquisition output interface and outputs the lens-in-the-lens detection signal from the third acquisition output interface. The four-dimensional detection unit is connected to the fourth acquisition output interface and outputs the four-dimensional transmission detection signal from the fourth acquisition output interface.

[0011] In this embodiment, the four-dimensional detection unit, the backscattered electron detection unit, the secondary electron detection unit, and the lens-in-the-lens detection unit are all connected to separate output interfaces. As a result, the corresponding output acquisition signals can be transmitted relatively independently without interference, which effectively improves the accuracy of the acquisition data.

[0012] In one embodiment of this application, the backscattered electron detection unit, the secondary electron detection unit, and the lens-in-the-lens detection unit acquire the signal electrons according to the first sampling signal in the sampling signal at a first sampling rate, and output the backscattered signal, the secondary electron signal, and the lens-in-the-lens detection signal accordingly; the four-dimensional detection unit acquires the signal electrons according to the second sampling signal in the sampling signal at a second sampling rate, and outputs the four-dimensional transmission detection signal accordingly; the frequency of the first sampling signal is less than the frequency of the second sampling signal, and the second sampling rate is greater than the first sampling rate.

[0013] In this embodiment, the four-dimensional detection unit needs to obtain transmitted electron patterns from different directions, so its acquisition output is high. In contrast, the backscattered electron detection unit, the secondary electron detection unit, and the lens detection unit detect and acquire fewer electrons. The four-dimensional detection unit acquires signal electrons at a different rate than the backscattered electron detection unit, the secondary electron detection unit, and the lens detection unit, which can effectively reduce the power consumption of the electron microscope module while ensuring the accuracy of signal electron acquisition.

[0014] Secondly, one embodiment of the application provides an electron beam detection control device, including a detection execution module and a detection control module. The detection execution module is connected to the aforementioned electron beam detection electron microscope (EMB), and is used to receive the non-transmissive detection signal and the four-dimensional transmission detection signal from the EMB, and to perform conversion processing on the non-transmissive detection signal and the four-dimensional transmission detection signal respectively into detection acquisition signals. The detection control module is connected to the EMB and receives the detection acquisition data, and forms a scanning image based on the detection acquisition data, wherein the scanning image includes a four-dimensional transmission scanning image corresponding to the four-dimensional transmission detection signal and a non-transmissive scanning image corresponding to the non-transmissive detection signal.

[0015] In one embodiment of this application, the detection execution module includes a processing unit, a signal output unit, a first data conversion processing unit, and a second data conversion processing unit. The processing unit is connected to the detection control module via a first execution signal transmission interface to receive control signals from the detection control module and output execution control signals based on the control signals. The control signals characterize the operating state of the electron beam detector microscope. The signal output unit connects the processing unit and the first control output interface. The first control interface is used to connect to the aforementioned electron beam detector microscope and outputs indication information from the first control output interface based on the execution control signals. The indication information includes a scanning signal and a sampling signal. The scanning signal controls the electron beam detector microscope to perform electron beam transmission scanning of the sample under test, and the sampling signal controls the electron beam detector microscope to collect the signal electrons emitted from the sample under test.

[0016] The first data conversion and processing unit is used to receive the non-transmissive detection signal from the non-transmissive detection unit, process the non-transmissive detection signal into detection acquisition data, and then transmit it to the detection control module through the first execution signal transmission interface. The second data conversion and processing unit is used to receive the four-dimensional transmission detection signal from the transmission detection unit, process the four-dimensional transmission detection signal into detection acquisition data, and then transmit it to the detection control module through the second execution signal transmission interface. The data transmission types of the first execution signal transmission interface and the second execution signal transmission interface are different.

[0017] In one embodiment, the detection control module includes a control application, a first control signal transmission interface, and a second control signal transmission interface. The first control signal transmission interface is used to receive detection acquisition data corresponding to the non-transmissive detection signal, and the second execution signal transmission interface is used to receive detection acquisition data corresponding to the four-dimensional transmissive detection data. The control application is used to output the control signal according to user-input instructions and to form the scan image based on the detection acquisition data. The non-transmissive scan image includes at least one of a backscattered electron scan image, a secondary electron scan image, and an in-lens detection scan image.

[0018] In one embodiment, the backscattered electron scan image is an image formed based on the backscattered signal corresponding to the backscattered electrons generated when the electron beam is focused and scanned onto the sample under test. The secondary electron scan image is an image formed based on the secondary electron signal corresponding to the secondary electrons generated when the electron beam is focused and scanned onto the sample under test. The in-lens detection scan image is an image formed based on the in-lens detection signal corresponding to the characteristic X-rays or secondary electrons generated when the electron beam is focused and scanned onto the sample under test.

[0019] Thirdly, one embodiment of this application provides a detection execution module, including a processing unit, a signal output unit, a first data conversion processing unit, and a second data conversion processing unit.

[0020] The processing unit is configured to receive a control signal via a first execution signal transmission interface, the control signal representing the operating state of the aforementioned electron beam detector. The signal output unit connects the processing unit and a first control output interface, the first control interface being connected to the aforementioned electron beam detector and configured to output indication information from the first control output interface under the control of the processing unit according to the control signal. The indication information includes at least a scanning signal and a sampling signal. The scanning signal controls the electron beam detector to perform electron beam transmission scanning of the sample under test, and the sampling signal controls the electron beam detector to collect signal electrons emitted from the sample under test corresponding to the scanning of the electron beam. The first data conversion processing unit receives the non-transmission detection signal from the non-transmission detection unit and processes the non-transmission detection signal into detection acquisition data. The second data conversion processing unit receives the four-dimensional transmission detection signal from the transmission detection unit and processes the four-dimensional transmission detection signal into detection acquisition data.

[0021] In one embodiment of this application, the first data conversion and processing unit is connected to a first acquisition input interface, a second acquisition input interface, and a third acquisition input interface. The first acquisition input interface is used to receive the backscattered signal corresponding to the backscattered electrons generated when the electron beam is focused and scanned onto the sample under test; the second acquisition input interface is used to receive the secondary electron signal corresponding to the secondary electrons generated when the electron beam is focused and scanned onto the sample under test; and the third acquisition input interface is used to receive the in-lens detection signal corresponding to the characteristic X-rays generated when the electron beam is focused and scanned onto the sample under test.

[0022] The first data conversion and processing unit is used to process at least one of the backscattered signal, the secondary electronic signal, and the in-lens detection signal into the detection and acquisition data; the second data conversion and processing unit is connected to the fourth acquisition input interface, the fourth acquisition input interface is used to receive the four-dimensional transmission detection signal, and the second data conversion and processing unit is used to process the four-dimensional projection detection signal into the detection and acquisition data.

[0023] In this embodiment, the detection execution module simultaneously receives the corresponding transmission diffraction electron image and at least one of the corresponding backscattered electron, secondary electron, or particle and ray. It also simultaneously processes the four-dimensional transmission detection signal output by the second data conversion and processing unit and the acquisition signal output by the backscattered electron detection unit, secondary electron detection unit, and lens detection unit by the first data conversion and processing unit. This effectively improves the processing efficiency of the acquisition signal, thereby facilitating the simultaneous formation of multiple scanning patterns and effectively improving the efficiency of material characterization and detection.

[0024] In one embodiment of this application, the first data conversion and processing unit is further connected to the first execution signal transmission interface, and outputs the detection signal through the first execution signal transmission interface. The detection execution module further includes a second execution signal transmission interface, and the second data conversion and processing unit is further connected to the second execution signal transmission interface, and outputs the detection signal through the second execution signal transmission interface. The data transmission types of the first execution signal transmission interface and the second execution signal transmission interface are different.

[0025] In one embodiment of this application, the first data conversion processing unit includes a first conversion unit and a first buffer unit. The first conversion unit is connected to the first acquisition input interface, the second acquisition input interface, and the third acquisition input interface, and is used to perform analog-to-digital conversion processing on the backscattered signal, the secondary electronic signal, and the in-lens detection signal. The first buffer unit is connected to the first conversion unit and the first execution signal transmission interface, and is used to buffer the non-transmissive detection signal after analog-to-digital conversion processing to form the detection acquisition data. The second data conversion processing unit includes a second conversion unit and a second buffer unit. The second conversion unit is connected to the fourth acquisition input interface and is used to perform analog-to-digital conversion processing on the four-dimensional transmissive detection signal. The second buffer unit is connected to the second conversion unit and the second execution signal transmission interface, and is used to buffer the four-dimensional transmissive detection signal after analog-to-digital conversion processing to form the detection acquisition data.

[0026] In one embodiment of this application, the first execution signal transmission interface is a USB interface, and the second execution signal transmission interface is a PCI-E interface.

[0027] The four-dimensional transmission detection signal output by the four-dimensional detection unit corresponds to a large amount of detection and acquisition data. It is output through an independent signal transmission interface and signal channel. The backscattering electron detection unit, the secondary electron detection unit, and the lens detection unit use other signal transmission interfaces and signal channels to output independently. This makes the transmission efficiency of the four-dimensional transmission detection signal, backscattering signal, secondary electron signal, and lens detection signal high, and can effectively avoid interference between signals, thus ensuring the accuracy of the detection and acquisition data.

[0028] Fourthly, embodiments of this application provide an electron beam scanning imaging method applied to the aforementioned electron beam detection electron microscope and the electron beam detection control device:

[0029] The detection control module receives operation instructions and sends corresponding control signals to the detection execution module;

[0030] The detection execution module outputs an indication signal according to the control signal to control the electron emission module to emit the electron beam, which is used to perform a transmission scan on the sample to be tested.

[0031] The detector module acquires signal electrons emitted from the sample under test and obtains acquisition signals, wherein: the signal electrons include signal electrons corresponding to the transmission diffraction image generated by focusing on the sample under test and performing transmission scanning, and non-transmission signal electrons generated by focusing on the sample under test and performing scanning; the acquisition signals include four-dimensional transmission detection signals corresponding to the transmission diffraction image acquired at a second sampling rate, and non-transmission detection signals corresponding to the non-transmission signal electrons acquired at a first sampling rate, wherein the second sampling rate is greater than the first sampling rate;

[0032] The detection and control module receives the acquired signals to form a scanned image, which is formed based on the four-dimensional transmission detection signal and the non-transmission detection signal.

[0033] In this embodiment, the non-transmissive detection signal includes at least one of the following: a backscattered signal corresponding to backscattered electrons generated when the electron beam is focused and scanned onto the sample under test; a secondary electron signal corresponding to secondary electrons generated when the electron beam is focused and scanned onto the sample under test; and an in-lens detection signal corresponding to the characteristic X-rays generated when the electron beam is focused and scanned onto the sample under test. The detection execution module receives the non-transmissive detection signal, performs analog-to-digital conversion and buffering processing to obtain detection acquisition data, and transmits it to the detection control module through a first signal transmission channel. The execution module also simultaneously receives the four-dimensional transmissive detection signal, performs analog-to-digital conversion and buffering processing to obtain detection acquisition data, and transmits it to the control module through a second signal transmission channel.

[0034] In this embodiment, the electron microscope module, by setting at least one of a four-dimensional detection unit and a backscattered electron detection unit, a secondary electron detection unit, and a lens-in-the-lens detection unit, can simultaneously detect and acquire backscattered electron, secondary electron, and transmission diffraction electron images generated when the electron beam is focused on the sample during a single emission of the electron beam, and output the corresponding acquisition signal. By processing the acquisition signal through the processing and control module, it can simultaneously obtain at least one of the four-dimensional transmission diffraction image and the backscattered electron image, secondary electron image, and lens-in-the-lens detection image. Thus, through the emission of the electron beam, it can simultaneously reflect different aspects of the sample information from different perspectives, effectively improving the efficiency and richness of material characterization and detection. Attached Figure Description

[0035] Figure 1 A schematic diagram of the overall structure of a scanning electron beam imaging device provided in one embodiment of this application;

[0036] Figure 2 For example Figure 1 The diagram shows the structure of an electron beam detector microscope.

[0037] Figure 3 For example Figure 1 A schematic diagram of the functional modules of the electron beam detection and control device shown.

[0038] Figure 4 For example Figure 3 The diagram shows the structure of the detection and control module.

[0039] Figure 5 For example Figure 3 The diagram shows the structure of the detection execution module.

[0040] Figure 6 for Figure 3 The waveform diagram of the indicator signal output by the signal output unit is shown below;

[0041] Figure 7 For example Figures 2-3 The diagram shows the workflow of the scanning electron beam imaging device performing the electron beam scanning imaging method.

[0042] Figure 8 for Figure 6 The scanned image displayed on the display interface by the detection control module shown. Detailed Implementation

[0043] Please see Figure 1 , Figure 1 This is a schematic diagram of the overall structure of a scanning electron beam imaging device 1 provided in one embodiment of this application. In this embodiment, the scanning electron beam imaging device 1 includes an electron beam detection electron microscope 100 and an electron beam detection control device 200. The electron beam detection electron microscope 100 and the electron beam detection control device 200 are electrically connected and interact with each other via signal lines. The electron beam detection electron microscope 100 and the electron beam detection control device 200 can be connected and interact with each other via signal lines such as coaxial cables or flexible ribbon cables.

[0044] The electron beam detection control device 200 is used to receive user operations and output corresponding indication signals to the electron beam detection electron microscope 100 according to the user operations. The electron beam detection electron microscope 100 performs electron transmission scanning on the sample 30 to be tested according to the indication signals, collects the electrons generated by the electron transmission scanning, and generates corresponding acquisition signals for the collected electrons, which are transmitted to the electron beam detection control device 200. The electron beam detection control device 200 forms a scanning image based on the acquisition signals. This scanning image is used to accurately reflect the microscopic characterization of the sample 30 to be tested, thereby obtaining the microscopic information of the sample 30 to be tested.

[0045] The instruction manual explains that the working principle of the electron beam detection electron microscope 100 and the electron beam detection control device 200 is as follows: When the high-energy particle electron beam in the electron beam detection electron microscope 100 is incident on and scans the surface of the sample under test, it will undergo complex elastic and inelastic collision scattering interactions with the atoms of the sample 30, producing non-transmittent reflective electrons, such as backscattered electrons, secondary electrons, X-rays (characteristic X-rays), and other signal electrons and photons. Elastic scattering mainly refers to the interaction between the electron beam and the sample atomic nuclei, where the incident electrons undergo a large angular deflection but almost no energy loss, producing backscattered electrons (BSE). Inelastic scattering mainly refers to the interaction between the electron beam and the outer electrons of the sample atoms, where the incident electron orbital deflection is relatively small but energy loss is large, producing secondary electrons (SE) and characteristic X-rays. When a high-energy particle electron beam is incident, the electron beam spot performs a two-dimensional (2D) transmission scan on the sample 30 under test. At each scanning point, a two-dimensional (2D) diffraction image is acquired, resulting in a four-dimensional (4D) transmission diffraction image (Four-Dimensional Transmission Electron Microscopy, 4D STEM), which represents the signal electrons generated in the transmission diffraction image. By acquiring the backscattered electron, secondary electron, and four-dimensional electron transmission diffraction images, the electron beam detection and control device 200 can obtain the microscopic information of the sample 30 under test and form a corresponding scanning image. The microscopic information in the scanning image includes the surface morphology, elemental composition, crystal orientation, and internal electric field, magnetic field, stress, and crystal orientation information of the sample 30 under test.

[0046] In this embodiment, the electron beam detector electron microscope 100 includes a first control input interface 10A, a first acquisition output interface 10B1, a second acquisition output interface 10B2, a third acquisition output interface 10B3, and a fourth acquisition output interface 10B4. Correspondingly, the electron beam detection control device 200 includes a first control output interface 20A, a first acquisition input interface 20B1, a second acquisition input interface 20B2, a third acquisition input interface 20B3, and a fourth acquisition input interface 20B4. The first control input interface 10A is electrically connected to the first control output interface 20A via a signal cable, allowing the electron beam detection control device 200 to output indication signals to the electron beam detector electron microscope 100. The first acquisition output interface 10B1, the second acquisition output interface 10B2, the third acquisition output interface 10B3, and the fourth acquisition output interface 10B4 are electrically connected to the first acquisition input interface 20B1, the second acquisition input interface 20B2, the third acquisition input interface 20B3, and the fourth acquisition input interface 20B4 respectively via signal cables, so that the electron beam detection electron microscope 100 can transmit the acquisition signal to the electron beam detection control device 200. In other words, the electron beam detection control device 200 sends instruction information to the electron beam detection electron microscope 100 through the first control output interface 20A, and the electron beam detection electron microscope 100 transmits the acquired signal to the electron beam detection control device 200 through the first acquisition output interface 10B1, the second acquisition output interface 10B2, the third acquisition output interface 10B3, and the fourth acquisition output interface 10B4.

[0047] Specifically, please refer to Figure 2 , its is like Figure 1 The diagram shows the structure of the electron beam detector electron microscope 100.

[0048] like Figure 2 As shown, the electron beam detection electron microscope 100 includes an electron emitter 10, a converging system 50, a converging aperture 60, a scanning coil 20, an objective lens 70, and a sample 30 arranged sequentially along the electron beam transmission path, as well as a detector module 40. The electron emitter 10, converging system 50, converging aperture 60, scanning coil 20, and objective lens 70 constitute the electron emission module 10T of the electron beam detection electron microscope 100. The converging system 50, converging aperture 60, and scanning coil 20 constitute a lens assembly (not shown). The electron emitter 10 emits an electron beam 101, and the lens assembly focuses the electron beam 101 onto the sample 30 at a preset angle or path. Correspondingly, after the electron beam 101 focuses and scans the sample 30, it generates signal electrons 102. The detector module 40 detects and collects the signal electrons 102 emitted from the electron beam 101 corresponding to the sample 30. The detector module 40 detects and collects signal electronics 102, and outputs corresponding detection signals based on the signal electronics.

[0049] Specifically, the electron emitter 10 is used to emit an electron beam 101. In this embodiment, the optical axis of the electron emitter 10 is defined as the Z-axis of the spatial coordinate system, that is, it can be defined as the optical axis Z. In this embodiment, the electron emitter 10 can be a Schottky-type or thermoelectric field emission type electron gun, which emits an electron beam of high-energy particles by applying an accelerating voltage to the electron emitter 10.

[0050] The converging system 50 is an accelerating electrode, such as an anode, and the electron beam 101 is accelerated by a voltage applied between the electron emitter 10 and the converging system 50.

[0051] The converging stop 60 is a magnetic coil used to focus and accelerate the electron beam 101.

[0052] The scanning coil 20 is coaxial with the optical axis Z and located on the path of the electron beam 101. The scanning coil 20 controls the electron beam 101 to perform a two-dimensional transmission scan on the sample 30 under test. The scanning coil 20 adjusts the position and angle of the electron beam 101 according to the scanning voltage provided by the electron beam detection and control device 200 to generate a grating scanning trajectory on the surface of the sample 30 under test. In this embodiment, the scanning coil 20 is an axisymmetric diode field device. Appropriate voltage or current excitation applied to multiple electrodes or coils will generate positive and negative electric fields or north and south polar magnetic fields in space.

[0053] Objective lens 70 is used to focus the electron beam 101, which is deflected by scanning coil 20, onto the surface of sample 30 to be tested.

[0054] When the electron beam 101 converges or focuses onto the sample 30, its interaction with the surface of the sample 30 excites reflected and transmitted signal electrons 102. That is, when the electron beam 101 is incident on and focused onto the surface of the sample 30, the excitation region near the focused surface will generate secondary electrons, Auger electrons, characteristic X-rays and continuous spectrum X-rays, backscattered electrons, transmitted electrons, and electromagnetic radiation in the visible, ultraviolet, and infrared regions, among other signal electrons 102. In this embodiment, the signal electrons 102 include non-transmittent signal electrons (secondary electrons), backscattered electrons, characteristic X-rays, and signal electrons in the transmission diffraction image; their signal strength reflects microscopic morphological features or physical characteristics. The signal electrons 102 are captured, detected, and converted into acquisition signals by the detector module 40. Specifically, the signal electrons 102 excited on the scanning grating trajectory are collected point-by-point and converted into corresponding electrical signals, which are then transmitted to the electron beam detection and control device 200 to form the corresponding scanning image.

[0055] In this embodiment, the electron beam detector electron microscope 100 can be a scanning transmission electron microscope (STEM). It utilizes a narrowly focused electron beam of high-energy particles to scan the sample 30 under test. The interaction between the electron beam 101 and the material of the sample 30 under test excites the generation of signal electrons 102, which carry various physical information of the sample 30 under test. This information is collected, amplified, and re-imaged to achieve the purpose of characterizing the microscopic morphology of the material.

[0056] In this embodiment, the sample to be tested 30 can be a wafer formed by a semiconductor process. On the wafer, devices and / or wiring patterns formed on a semiconductor substrate can be included.

[0057] The sample carrying platform 80 is used to place the sample 30 to be tested. In this embodiment, the sample carrying platform 80 can move linearly along the first direction X and the second direction Y in a plane perpendicular to the Z-axis. It can be understood that in this embodiment, the sample carrying platform 80 may also be provided with a driving structure and a shock-absorbing structure. The driving structure may be a motor and a sliding rod or a sliding groove, etc., and the shock-absorbing structure may be an elastic element.

[0058] Specifically, the sample carrier platform 80 includes a carrier surface 81 and a back surface 82 arranged opposite to each other. The carrier surface 81 faces the electron emission module 10T and is used to place the sample 30 to be tested. The specific shape of the carrier surface 81 can be a plane, a curved surface, or a concave-convex surface, etc. The back surface 82 is the back side of the sample carrier platform 80 that is away from the electron emission module 10T.

[0059] Please continue reading. Figure 2 The detector module 40 includes a non-transmissive detection unit 40A and a transmissive detection unit 40B. The non-transmissive detection unit 40A is disposed between the electron emission module 10T and the supporting surface 81. It is used to detect the non-transmissive signal electrons 102 generated when the electron beam is focused and scanned onto the sample 30 under test, and outputs a corresponding non-transmissive detection signal. In this embodiment, the non-transmissive detection unit 40A is mainly used to detect the signal electrons 102 reflected when the electron beam is focused and scanned onto the sample 30 under test. Meanwhile, the transmissive detection unit 40B is disposed on one side of the back surface 82, and is used to detect and acquire the signal electrons 102 generated when the electron beam is focused and transmissively scanned onto the sample 30 under test, and outputs a corresponding four-dimensional transmissive detection signal.

[0060] More specifically, in this embodiment, the non-transmittent detection unit 40A includes a backscattered electron detector (BED) 41, a secondary electron detector (SED) 42, and an inlens detector (Inlens) 43. Correspondingly, the transmittent detection unit 40B includes a four-dimensional detection unit 44.

[0061] The backscattered electron detection unit 41 is used to detect the backscattered electrons generated as signal electrons 102 when the acquisition electron beam 101 focuses and scans the sample 30 under test, and converts the backscattered electrons into a corresponding backscattered signal S1. The backscattered electron detection unit 41 is connected to the first acquisition output interface 10B1, and transmits the backscattered signal S1 to the electron beam detection control device 200 through the first acquisition output interface 10B1. In this embodiment, the backscattered electron detection unit 41 is located between the sample 30 under test and the objective lens 70 in a direction coaxial with the optical axis Z, so as to efficiently detect the backscattered electrons generated when the acquisition electron beam 101 focuses and scans the sample 30 under test.

[0062] The secondary electron detection unit 42 is used to detect the secondary electrons generated when the electron beam 101 focuses and scans the sample 30 under test, and correspondingly collects the secondary electrons as signal electrons 102, and correspondingly converts and outputs the corresponding secondary electron signal S2. In this embodiment, the secondary electron detection unit 42 is connected to the second acquisition output interface 10B2, and transmits the secondary electron signal S2 to the electron beam detection control device 200 through the second acquisition output interface 10B2. In this embodiment, the secondary electron detection unit 42 is located between the sample 30 under test and the objective lens 70 and is coaxial with the optical axis Z at a first angle θ1, so as to efficiently detect the secondary electrons generated when the electron beam 101 focuses and scans the sample 30 under test. In this embodiment, the first angle θ is greater than 0°.

[0063] The in-lens detection unit 43 is used to detect and collect the characteristic X-rays and secondary electrons generated as signal electrons 102 when the sample 30 is irradiated. For example, the characteristic X-rays include particles and rays, and correspondingly convert and output the corresponding in-lens detection signal S3. In this embodiment, the in-lens detection unit 43 is connected to the third acquisition output interface 10B3, and transmits the in-lens detection signal S3 to the electron beam detection control device 200 through the third acquisition output interface 10B3. In this embodiment, the in-lens detection unit 43 is located inside the objective lens 70 and is coaxial with the optical axis Z, that is, it is coaxial with the optical axis Z and has a second angular position, so as to efficiently detect and collect the corresponding characteristic X-ray particles and rays generated when the electron beam 101 focuses and scans the sample 30. In this embodiment, the second angle is 0°. In this embodiment, the detection principle of the lens-in-the-lens detection unit 43 and the secondary electron detection unit 42 is basically the same. The difference is that the two are set in different positions, resulting in different intensity of the received signal electrons 102. The corresponding detection signals represent different microscopic features and microscopic information. In other words, the lens-in-the-lens detection unit 43 can also acquire some of the secondary electrons generated when the electron beam 101 is focused and scanned onto the sample 30 to be tested.

[0064] In this embodiment, the non-transmittance detection unit 40A includes a backscattered electron detection unit 41, a secondary electron detection unit 42, and a lens-in-the-lens detection unit 43. The non-transmittance detection signal pairs respectively include a backscattered signal S1, a secondary electron signal S2, and a detection signal S3.

[0065] The four-dimensional detection unit 44 in the transmission detection unit 40B is used to detect the transmission diffraction image of the electron beam 101, which is acquired in a two-dimensional (2D) direction, after it penetrates the sample 30 under test and is diffracted, generating signal electrons 102. It then converts and outputs the corresponding four-dimensional transmission detection signal S4. In this embodiment, the two-dimensional direction can be either the first direction X or the second direction Y. In this embodiment, the four-dimensional detection unit 44 is connected to the fourth acquisition output interface 10B4, and transmits the four-dimensional transmission detection signal S4 to the electron beam detection control device 200 through the fourth acquisition output interface 10B4. In this embodiment, the in-lens detection unit 43 is located on the side of the sample 30 under test away from the objective lens 70, so as to efficiently detect and acquire the electron pattern generated by the electron beam 101 after focusing and transmitting and scanning the sample 30 under test in both the first direction X and the second direction Y.

[0066] Please see Figure 3 , its is like Figure 1 The diagram shows the functional modules of the electron beam detection and control device 200. In this embodiment, the electron beam detection and control device 200 includes a detection execution module 210 and a detection control module 220.

[0067] The detection execution module 210 is connected to the electron beam detector electron microscope 100, and receives non-transmissive detection signals and the four-dimensional transmission detection signals from the electron beam detector electron microscope 100, and performs conversion processing on the non-transmissive detection signals and the four-dimensional transmission detection signals into detection acquisition signals respectively. The detection control module 220 is connected to the detection execution module 210 and receives the detection acquisition data, and forms a scanning image based on the detection acquisition data, wherein the scanning image includes a four-dimensional transmission scanning image corresponding to the four-dimensional transmission detection signal and a non-transmissive scanning image corresponding to the non-transmissive detection signal.

[0068] The detection execution module 210 and the detection control module 220 are connected and interact with each other via a first signal transmission channel CH1 and a second signal transmission channel CH2. The detection execution module 210 includes a first execution signal transmission interface 210A and a second execution signal transmission interface 210B. Correspondingly, the detection control module 220 includes a first control signal transmission interface 220A and a second control signal transmission interface 220B. The first execution signal transmission interface 210A is connected to the first control signal transmission interface 220A via a signal transmission line to form the first signal transmission channel CH1. The second execution signal transmission interface 210B is connected to the second control signal transmission interface 220B via a signal transmission line to form the second signal transmission channel CH2. In this embodiment, the first execution signal transmission interface 210A and the first control signal transmission interface 220A are Universal Serial Bus (USB) interfaces, while the second execution signal transmission interface 210B and the second control signal transmission interface 220B are Peripheral Component Interconnect Express (PCI-E) interfaces. Correspondingly, the first signal transmission channel CH1 is a Universal Serial Bus (USB) channel, and the second signal transmission channel CH2 is a High-Speed ​​Serial Computer Expansion Bus (PCI-E) channel.

[0069] The detection execution module 210 receives the backscattered signal S1, the secondary electronic signal S2, and the intra-lens detection signal S3 from the non-transmissive detection signal output by the backscattered electron detection unit 41, the secondary electronic signal S2, the intra-lens detection signal S3, and the intra-lens detection signal S3 from the intra-lens detection unit 43. It performs analog-to-digital conversion and buffering on the backscattered signal S1, the secondary electronic signal S2, and the intra-lens detection signal S3 to obtain detection acquisition data, which is then transmitted to the detection control module 220 via the first signal transmission channel CH1. The detection execution module 210 also simultaneously receives the four-dimensional transmissive detection signal S4 output by the four-dimensional detection unit 44. After performing analog-to-digital conversion to obtain the corresponding data signal and buffering, it obtains detection acquisition data, which is then transmitted to the detection control module 220 via the second signal transmission channel CH2.

[0070] In this embodiment, the detection execution module 210 may be a field programmable gate array (FPGA), application specific integrated circuit (ASIC), system on chip (SoC), central processor (CPU), network processor (NP), digital signal processor (DSP), micro controller unit (MCU), programmable logic device (PLD), or other integrated chip.

[0071] The detection control module 220 is used to generate corresponding scanning images based on the detection and acquisition data of the corresponding backscattered signal S1, secondary electron signal S2, lens detection signal S3, and four-dimensional transmission detection signal S4, and displays them through the display interface of the display module. Figure 4 The scanned images are displayed, including a four-dimensional transmission scan image corresponding to the thought transmission detection signal and a non-transmission scan image corresponding to the non-transmission detection signal. Simultaneously, the detection control module 220 provides a control signal Stc to the detection execution module 210 through the first signal transmission channel CH1. The detection execution module 210 outputs an indication signal according to the control signal Stc. In this embodiment, the indication signal includes a scan signal SC, a acquisition signal SA, a synchronization clock signal Svy (synchronizing sign), and a trigger enable signal Sen (Valid). In this embodiment, the detection control module 220 is a dedicated control application installed on a computer host, mobile phone, tablet computer, etc. It can be understood that the computer host, mobile phone, and tablet computer also include other auxiliary modules that support the operation of the detection control module 220, such as a processor, memory, display, and input devices such as a mouse and keyboard that drive and execute the application.

[0072] For more details, please refer to the following: Figure 3 and Figure 4 ,in, Figure 4 For example Figure 3The schematic diagram of the detection control module 220 shown includes a dedicated control application 221 installed on a computer host, mobile phone, tablet computer, etc. The control application 221 is an application program (APP) capable of executing preset functions. The computer host, mobile phone, and tablet computer also include other auxiliary modules for the operation of the detection control module 220, such as a processor, memory, display, and input devices such as a mouse and keyboard that drive and execute the application.

[0073] In the detection control module 220, the control application 221 receives the user's start operation on the display interface and is triggered to run. The display interface expands and displays multiple input interfaces, where the user can set parameters according to actual needs, such as the number of scan points, voltage range, and scan path during scanning by the electron beam detector microscope 100. Based on the user's settings, the control application 221 in the detection control module 220 outputs a corresponding control signal Stc. The control signal Stc is transmitted to the detection execution module 210 through the first signal transmission channel CH1. In other words, the control signal Stc can be a signal generated by the detection control module 220 from the user's input command in the application program (APP), and the control signal Stc is used to characterize the working state of the electron beam detector microscope 100 that needs to be controlled. In this embodiment, the control signal can be a digital signal.

[0074] The detection execution module 210 controls the electron beam detection microscope 100 to perform electron beam scanning and obtain corresponding detection acquisition data according to the control signal Stc. For example, the detection control module 220 processes the detection acquisition data corresponding to the backscatter signal S1, secondary electron signal S2, lens detection signal S3, and four-dimensional transmission detection signal S4 to form a scanned image, which is then displayed on the display interface. For example, the detection control module 220 can display the PR image or wafer pattern image based on the detection acquisition data.

[0075] Please continue to refer to this as well. Figure 3 and Figure 5 , Figure 5 For example Figure 3The schematic diagram of the detection execution module 210 shown includes a processing unit 21A, a signal output unit 21B, a first data conversion processing unit 211, and a second data conversion processing unit 212. The first data conversion processing unit 211 receives non-transmissive detection signals from the non-transmissive detection unit 40A and processes these signals into detection acquisition data. The second data conversion processing unit 212 receives four-dimensional transmissive detection signals from the transmissive detection unit 40B and processes these signals into detection acquisition data. In this embodiment, the first data conversion processing unit 211 includes a first conversion unit 21C and a first buffer unit 21D, and the second data conversion processing unit 212 includes a second conversion unit 21E and a second buffer unit 21F. In this embodiment, the detection execution module 210 has a rectangular structure and can be directly plugged into the electron beam detector electron microscope 100 through the plug-in terminal IN. The first execution signal transmission interface 210A, the second execution signal transmission interface 210B, the first control output interface 20A, the first acquisition input interface 20B1, the second acquisition input interface 20B2, the third acquisition input interface 20B3, and the fourth acquisition input interface 20B4 can all be set on one side of the detection execution module 210. Of course, these interfaces can also be set on different sides of the detection execution module 210 according to actual needs.

[0076] More specifically, the processing unit 21A is connected to the first signal transmission channel CH1 through the first execution signal transmission interface 210A, and receives the control signal Stc through the self-detection control module 220 of the first signal transmission channel CH1. After parsing the control signal Stc, the processing unit 21A obtains the number of scan points, voltage range, and scan path information, and outputs the execution control signal Soc to the signal output unit 21B accordingly.

[0077] The execution control signal Stc is used to control the output signal unit 21B to output corresponding indication signals. These indication signals include a scan signal SC, a data acquisition signal SA, a synchronization clock signal Svy, and a trigger enable signal Sen. The control signal Stc can be a digital signal, while the scan signal SC, data acquisition signal SA, synchronization clock signal Svy, and trigger enable signal Sen are analog electrical signals. The output signal unit 21B can be a signal output circuit composed of a digital-to-analog converter and a shift register.

[0078] Please refer to the following: Figure 3 and Figure 6 ,in, Figure 6 for Figure 3 The waveform diagram of the indicator signal output by the signal output unit 21B is shown.

[0079] like Figure 6As shown, the scanning signal SC can correspond to information such as the number of scanning points, voltage range, and scanning path when the electron beam 101 performs scanning, as included in the control signal Stc. The scanning signal SC includes a pulse signal with a preset frequency.

[0080] The synchronization clock signal Svy is used to control the synchronous operation of the electron emitter 10, scanning coil 20, and detector module 40 within the electron beam detector microscope 100. In this embodiment, the synchronization clock signal Svy can be a pulse signal, and its rising edge can be used as a synchronization trigger command to control the operation of the electron emitter 10, scanning coil 20, and detector module 40. In other embodiments of this application, the falling edge of the synchronization clock signal Svy can also be used as the synchronization trigger command.

[0081] The trigger enable signal Sen is triggered on the rising edge of the synchronization clock signal Svy, and is used to control the electron emitter 10, scanning coil 20 and detector module 40 in the electron beam detector microscope 100 to start working. In this embodiment, the trigger enable signal Sen can also be a pulse signal, and its rising edge can be used as a trigger command.

[0082] The scanning signal SC is transmitted to the electron beam detector electron microscope 100 through the first control output interface 20A of the detection execution module 210 and the corresponding signal line. The first control input interface 10A of the electron beam detector electron microscope 100 receives the scanning signal SC and loads it onto the scanning coil 20. Under the control of the scanning signal SC, the scanning coil 20 adjusts the angle and position of the emitted electron beam 101 and focuses it onto the surface of the sample 30 to be tested.

[0083] It is understandable that the scanning coil 20 can control the electron beam 101 to perform transmission scanning on the surface of the sample 30 under the control of the scanning signal SC according to the set number of scanning points, scanning path, etc.

[0084] The acquired signal SC is also transmitted to the backscattered electron detection unit 41, the secondary electron detection unit 42, the lens detection unit 43, and the four-dimensional detection unit 44 through the first control input interface 10A of the electron beam detection electron microscope 100, so as to control the backscattered electron detection unit 41, the secondary electron detection unit 42, the lens detection unit 43, and the four-dimensional detection unit 44 to start detecting and acquiring the signal electrons 102 emitted from the sample 30 by the corresponding electron beam 101.

[0085] In this embodiment, the sampling signal SA includes a first sampling signal SA1 and a second sampling signal SA2. The first sampling signal SA1 is a pulse signal with a first frequency f1, and the second sampling signal SA2 is a pulse signal with a second frequency f2. The first frequency f1 is less than the second frequency f2. In this embodiment, the second frequency f2 is n times the first frequency f1, where n is an integer greater than 1.

[0086] In this embodiment, the synchronization clock signal Syn is a square wave signal, and its rising edge can be used as the synchronization trigger edge. The rising edge of the trigger enable signal Sva is synchronized with the synchronization clock signal Syn, and its rising edge can be used as the synchronization trigger edge. The scan signal Sc is a periodic pulse signal with a preset frequency f. The sampling signals include a first sampling signal Sa1 and a second sampling signal Sa2, wherein the first sampling signal Sa1 is a periodic pulse signal with a first frequency f1, and the second sampling signal Sa2 is a periodic pulse signal with a second frequency f2, where the first frequency f1 is less than the second frequency f2. In this embodiment, the second frequency f2 is n times the first frequency f1, and n is an integer greater than 1. In this embodiment, n is 3. In other embodiments of this application, n can be adjusted according to actual needs, for example, n can be 2, 4, 5, or other numbers, and is not limited to this example.

[0087] Please continue to refer to this as well. Figure 2 and Figure 3 The first sampling signal SA1 is a sampling signal applied to the backscattered electron detection unit 41, the secondary electron detection unit 42, and the lens-in-the-lens detection unit 43, used to indicate that the backscattered electron detection unit 41, the secondary electron detection unit 42, and the lens-in-the-lens detection unit 43 start outputting the backscattered signal S1, the secondary electron signal S2, and the lens-in-the-lens detection signal S3. The second sampling signal SA2 is a sampling signal applied to the four-dimensional detection unit 44, used to indicate that the four-dimensional detection unit 44 outputs the four-dimensional transmission detection signal S4.

[0088] After receiving the first sampling signal SA1, the backscattered electron detection unit 41, the secondary electron detection unit 42, and the lens detection unit 43 output corresponding backscattered signals S1, secondary electron signals S2, and lens detection signals S3 for the detected and acquired signal electrons 102 according to the first sampling rate V1. That is, the backscattered electron detection unit 41, the secondary electron detection unit 42, and the lens detection unit 43 can detect and acquire the corresponding signal electrons 102 at each rising edge of the first sampling signal SA1 according to the first sampling rate V1.

[0089] Meanwhile, after receiving the second sampling signal SA2, the four-dimensional detection unit 44 detects and collects the electrons generated by transmission and diffraction in the corresponding signal electrons 102 according to the second sampling rate V2 based on the second sampling signal SA2. In this embodiment, the four-dimensional detection unit 44 can start detecting and collecting the corresponding signal electrons 102 at each rising edge of the second sampling signal SA2.

[0090] It is understandable that since the first frequency f1 of the first sampled signal SA1 is less than the second frequency f2 of the second sampled signal SA2, the second sampling rate V2 is greater than the first sampling rate V1. In this embodiment, the second frequency f2 is n times the first frequency f1, therefore the second sampling rate V2 is n times the first sampling rate V1.

[0091] More specifically, the first acquisition input interface 20B1 is used to connect to the backscattered electron detection unit 41, and receives the backscattered signal S1 through the first acquisition input interface 20B1 and transmits it to the first conversion unit 21C in the first data conversion and processing unit 211. The second acquisition input interface 20B2 is used to connect to the secondary electron detection unit 42, and receives the secondary electron signal S2 through the second acquisition input interface 20B2 and transmits it to the first conversion unit 21C. The third acquisition input interface 20B3 is used to connect to the lens-in-the-lens detection unit 43, and receives the lens-in-the-lens detection signal S3 through the third acquisition input interface 20B3 and transmits it to the first conversion unit 21C.

[0092] The first conversion unit 21C is used to perform analog-to-digital conversion on the backscattered signal S1, the secondary electronic signal S2, and the lens detection signal S3, and then convert them into digital detection and acquisition data before transmitting them to the first buffer unit 21D. It can be understood that, corresponding to the backscattered signal S1, the secondary electronic signal S2, and the lens detection signal S3, the first conversion unit 21C may include multiple sub-analog-to-digital units, thereby enabling simultaneous analog-to-digital conversion of the backscattered signal S1, the secondary electronic signal S2, and the lens detection signal S3, effectively improving the conversion efficiency.

[0093] The fourth acquisition input interface 20B4 is used to connect to the four-dimensional detection unit 44, and to receive the four-dimensional transmission detection signal S4 output by the four-dimensional detection unit 44 through the fourth acquisition input interface 20B4, and transmit it to the second conversion unit 21E in the first data conversion and processing unit 211. The second conversion unit 21E is used to perform analog-to-digital conversion on the four-dimensional transmission detection signal S4 and process it into digital form detection acquisition data before transmitting it to the second buffer unit 21F.

[0094] It is understood that the first buffer unit 21D can be used to buffer the detection and acquisition data corresponding to the backscattered signal S1, the secondary electronic signal S2, and the lens detection signal S3; the second buffer unit 21F can buffer the detection and acquisition data corresponding to the four-dimensional transmission detection signal S4. In this embodiment, the first buffer unit 21D is connected to the first signal transmission channel CH1, and is connected to the detection control module 220 through the first signal transmission channel CH1. The detection and acquisition data corresponding to the backscattered signal S1, the secondary electronic signal S2, and the lens detection signal S3 are transmitted to the detection control module 220 through the first signal transmission channel CH1. The second buffer unit 21F is connected to the second signal transmission channel CH2, and is connected to the detection control module 220 through the second signal transmission channel CH2. The detection and acquisition data corresponding to the four-dimensional transmission detection signal S4 can be transmitted to the detection control module 220 through the second signal transmission channel CH2.

[0095] In this embodiment, the first data conversion and processing unit 211 performs conversion and buffering processing on the backscattered signal S1, secondary electron signal S2, and lens detection signal S3 of the non-transmission detection signal, and transmits them to the detection control module 220 through the first signal transmission channel CH1; simultaneously, the second data conversion and processing unit 212 performs conversion and buffering processing on the four-dimensional transmission detection signal S4, and transmits it to the detection control module 220 through the second signal transmission channel CH2. It can be seen that the first data conversion and processing unit 211 and the second data conversion and processing unit 212 can simultaneously process the acquired signals provided by the electron beam detector microscope 100, thereby enabling the four-dimensional transmission detection signal S4 to be converted simultaneously with the backscattered signal S1, secondary electron signal S2, and lens detection signal S3, effectively improving the conversion efficiency and facilitating the detection control module 220 to simultaneously generate and display the scanned images corresponding to the four-dimensional transmission detection signal S4 and the backscattered signal S1, secondary electron signal S2, and lens detection signal S3.

[0096] In this embodiment, the first conversion unit 21C and the second conversion unit 21E can be analog-to-digital conversion circuits, the first control output interface 20A can be a coaxial cable interface or other control signal transmission interface, the first acquisition input interface 20B1, the second acquisition input interface 20B2, and the third acquisition input interface 20B3 are coaxial cable interfaces, and the fourth acquisition input interface 20B4 can be a coaxial cable interface or a PCI-E bus interface.

[0097] Please refer to the following: Figures 1-7 ,like Figure 7 For example Figures 2-3 The diagram shows the workflow of the scanning electron beam imaging device 1 performing the electron beam scanning imaging method.

[0098] like Figure 7As shown, in step 1000, the detection control module 220 receives the user's operation and sends a control signal to the detection execution module 210.

[0099] In this embodiment, as Figure 4 As shown, the control signal can be a signal generated by the detection control module 220 based on the instructions input by the user on the input interface of the control application 221. More specifically, after receiving the user's operation, the detection control module 220 provides the control signal to the detection execution module 210 through the first signal transmission channel CH1. It can be understood that the control signal includes information such as the number of scanning points, voltage range, and scanning path of the electron beam 101 output by the electron beam detector electron microscope 100. The control signal can be a digital signal.

[0100] In step 2000, the detection execution module 210 outputs an indication signal according to the control signal to control the electron emission module 10T to emit an electron beam, which is used to perform a transmission scan on the sample 30 to be tested.

[0101] In this embodiment, as Figure 3 , Figure 6 As shown, the detection execution module 210 outputs an execution control signal Sot to the signal output unit 21B according to the control signal Stc, so as to control the signal output unit 21B to generate and output indication information. The indication information is transmitted to the electron beam detector electron microscope 100 through the first control output interface 20A. The indication information includes a synchronization clock signal Svy, a trigger enable signal Sen, a scan signal SC, a first sampling signal SA1, and a second sampling signal SA2.

[0102] More specifically, the signal output unit 21B generates a synchronization clock signal Svy and a trigger enable signal Sen in advance by the processing unit 21A according to the execution control signal Sot, and outputs a scan signal SC, a first sampling signal SA1, and a second sampling signal SA2 corresponding to the rising edges of the synchronization clock signal Svy and the trigger enable signal Sen. In this embodiment, the synchronization clock signal Svy, the trigger enable signal Sen, the scan signal SC, the first sampling signal SA1, and the second sampling signal SA2 are all analog signals.

[0103] In the electron beam detector electron microscope 100, the electron emitter 10 and the scanning coil 20 work in conjunction with the scanning signal SC. The electron emitter 10 emits an electron beam 101, which, after being adjusted by the focusing system 50 and the focusing aperture 60, is focused onto the surface of the sample 30 by the objective lens 70 after passing through the scanning path, position, and angle adjusted according to the scanning signal SC. This performs scanning and transmission scanning. In this embodiment, to facilitate four-dimensional electron transmission diffraction imaging, the electron beam 101 performs transmission scanning along a path where the scanning coil 20 travels simultaneously in both the first direction X and the second direction Y.

[0104] Step 3000: The detector module 40 collects the signal electrons 102 emitted from the sample 30 and obtains the collected signal.

[0105] The signal electrons 102 include signal electrons corresponding to the transmission diffraction image generated by focusing on the sample 30 for transmission scanning, and non-transmission signal electrons generated by focusing on the sample for scanning. The corresponding acquisition signals include a four-dimensional transmission detection signal corresponding to the transmission diffraction image, and a non-transmission detection signal corresponding to the non-transmission signal electrons acquired at a first sampling rate.

[0106] In this embodiment, after receiving the first sampling signal SA1, the backscattered electron detection unit 41, the secondary electron detection unit 42, and the lens-in-the-lens detection unit 43 detect and collect the corresponding signal electrons 102 at a first sampling rate V1, and output the backscattered signal S1, the secondary electron signal S2, and the lens-in-the-lens detection signal S3, respectively. Simultaneously, after receiving the second sampling signal SA2, the four-dimensional detection unit 44 detects and collects the corresponding signal electrons 102 at a second sampling rate V2 and outputs the four-dimensional transmission detection signal S4.

[0107] In this embodiment, the second frequency f2 of the second sampling signal SA2 is greater than the first frequency f1 of the first sampling signal SA1. Therefore, the sampling rate of the four-dimensional detection unit 44 is higher than the sampling frequency of the backscattered electron detection unit 41, the secondary electron detection unit 42, and the lens detection unit 43. Correspondingly, the number of the four-dimensional transmission detection signals S4 is greater than that of the backscattered signal S1, the secondary electron signal S2, and the lens detection signal S3.

[0108] Step 4000: The detection control module 220 receives the acquired signal and forms a scanned image.

[0109] Specifically, conversion and buffering processing is performed based on the received acquisition signals. This includes data conversion processing of the backscattered signal S1, secondary electron signal S2, lens-in-the-lens detection signal S3, and four-dimensional transmission detection signal S4 to obtain detection and acquisition data, and buffering processing of the detection and acquisition data.

[0110] In this embodiment, the backscattered signal S1, the secondary electron signal S2, and the in-lens detection signal S3 are processed by analog-to-digital conversion by the first conversion unit 21C of the first data conversion processing unit 211 in the detection execution module 210, and are buffered by the first buffer unit 21D. At the same time, the second conversion unit 21E of the second data conversion processing unit 212 processes the four-dimensional transmission detection signal S4 by analog-to-digital conversion, and is buffered by the second buffer unit 21F.

[0111] The detection control module 220 reads the detection acquisition data corresponding to the backscattered signal S1, secondary electronic signal S2, and lens detection signal S3 from the first data conversion and processing unit 211 through the first signal transmission channel CH1, and simultaneously reads the detection acquisition data corresponding to the four-dimensional transmission detection signal from the second data conversion and processing unit 212 through the second signal transmission channel CH2, and forms the following based on the detection data: Figure 8 The scanned image shown, in which, Figure 8 for Figure 6 The scanned image displayed on the display interface by the detection control module 220 is shown. Figure 8 As shown, the display interface in the detection control module 220 includes a backscattered electron scan image (BSE), a secondary electron scan image (SE), an in-lens detection scan image (Inlens), and a four-dimensional transmission diffraction scan image (TD).

[0112] Among them, the secondary electron image (SE) mainly characterizes the surface morphology features of the sample 30 under test, such as roughness or surface smoothness. The in-lens probe image (Inlens) and backscattered electron image (BSE) mainly characterize the morphology features of the sample 30 under test and can also display atomic number contrast, so as to facilitate qualitative compositional analysis of the sample 30 under test. The four-dimensional transmission diffraction image (TD) can be a virtual diffraction image of the sample 30 under test, which can accurately characterize the orientation and strain mapping of the sample 30 under test and perform phase difference analysis.

[0113] Among these, virtual diffraction imaging uses detection data corresponding to four-dimensional transmission detection signals. Bright-field / dark-field images are obtained by integrating the diffraction intensities of the diffracted and transmitted beams, respectively. These images provide nanometer or atomic resolution information, revealing the structure of nanomaterials. Regarding orientation and strain mapping, in Bragg point imaging, diffraction patterns are grouped using correlation analysis based on diffraction templates. A representative diffraction template is obtained from each group, and different directional colors are assigned, allowing visualization of individual grain orientations. Comparing the unstrained and strained regions of the diffraction patterns in sample 30 allows for observation of lattice parameter changes, providing spatial strain information. Finally, phase difference analysis, based on differential phase difference imaging, measures the electron beam deflection at each scanning point, thus mapping the local electromagnetic field within the sample.

[0114] In the scanning electron beam imaging apparatus 1 of this embodiment, the electron beam detector electron microscope 100, by setting a four-dimensional detection unit 44, a backscattered electron detection unit 41, a secondary electron detection unit 42, and an in-lens detection unit 43, can simultaneously detect and collect backscattered electrons, secondary electrons, and transmission diffraction electrons generated when the electron beam 101 is focused on the sample 30 during a single emission of the electron beam 101, and output the corresponding acquisition signals. The acquisition signals are processed by the electron beam detection control device 200, which can simultaneously obtain the backscattered electron image BSE, the secondary electron image SE, the in-lens detection image Inlens, and the four-dimensional transmission diffraction image TD. Thus, through the emission of the electron beam 101, different aspects of the sample information can be reflected simultaneously from different perspectives, effectively improving the material characterization efficiency and information richness.

[0115] In other embodiments of this application, the electron beam detection electron microscope 100, in addition to the four-dimensional detection unit 44 serving as the transmission detection unit 40B, also provides at least one of the following serving as the non-transmission detection unit 40A: the backscattered electron detection unit 41, the secondary electron detection unit 42, and the lens-in-the-lens detection unit 43. For example, the four-dimensional detection unit 44 and the backscattered electron detection unit 41, the four-dimensional detection unit 44 and the secondary electron detection unit 42, the four-dimensional detection unit 44 and the lens-in-the-lens detection unit 43, or the four-dimensional detection unit 44 and any two of the backscattered electron detection unit 41, the secondary electron detection unit 42, and the lens-in-the-lens detection unit 43. Of course, the electron beam detection electron microscope 100 may also provide other types of detection units, and is not limited to this example.

[0116] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. An electron beam detector electron microscope, characterized in that, include: Electron emission module, used to emit electron beams; The sample carrying platform includes a carrying surface and a back surface arranged opposite to each other, the carrying surface facing the electron emission module and used to place the sample to be tested; The detector module includes a transmission detection unit and a non-transmission detection unit, wherein: The non-transmittance detection unit is disposed between the electron emission module and the bearing surface, and is used to detect the non-transmittance signal electrons generated when the electron beam is focused and scanned to the sample under test and output a corresponding non-transmittance detection signal. The transmission detection unit is disposed on one side of the back side and is used to detect and acquire the signal electrons generated by the electron beam focusing transmission scanning of the sample under test and output a four-dimensional transmission detection signal accordingly.

2. The electron beam detector electron microscope according to claim 1, characterized in that, The non-transmissive detection unit includes at least one of a backscattered electron detection unit, a secondary electron detection unit, and an in-lens detection unit. The backscattered electron detection unit is used to detect and collect backscattered electrons generated when the electron beam is focused and scanned onto the sample under test, and outputs a backscattered signal. The secondary electron detection unit is used to detect and collect secondary electrons generated by the electron beam focusing and scanning the sample under test along the first angle and output the secondary electron signal. The lens-in-the-lens detection unit is used to detect and collect the characteristic X-rays or secondary electrons generated when the electron beam is focused and scanned to the sample under test along the second angle, and output the lens-in-the-lens detection signal; The transmission detection unit includes a four-dimensional detection unit, which detects and acquires the signal electrons of the transmission diffraction image and outputs the corresponding four-dimensional transmission detection signal.

3. The electron beam detector electron microscope according to claim 2, characterized in that, The electron microscope module further includes a first control input interface, a first acquisition output interface, a second acquisition output interface, a third acquisition output interface, and a fourth acquisition output interface. The first control input interface is used to receive indication information, which includes at least a scanning signal and a sampling signal. The scanning signal is used to control the electron emission module to emit the electron beam to scan the sample under test. The sampling signal is used to control the detector module to collect the signal electrons emitted from the sample under test corresponding to the scanning of the electron beam. The signal electrons include a transmission diffraction image and at least one of the backscattered electrons, the secondary electrons, and the characteristic X-rays. The backscattered electron detection unit is connected to the first acquisition output interface and outputs the backscattered signal from the first acquisition output interface; the secondary electron detection unit is connected to the second acquisition output interface and outputs the secondary electron signal from the second acquisition output interface; the lens in-lens detection unit is connected to the third acquisition output interface and outputs the lens in-lens detection signal from the third acquisition output interface; the four-dimensional detection unit is connected to the fourth acquisition output interface and outputs the four-dimensional transmission detection signal from the fourth acquisition output interface.

4. The electron beam detector electron microscope according to claim 2, characterized in that, The backscattered electron detection unit, the secondary electron detection unit, and the lens detection unit collect the signal electrons according to the first sampling signal in the sampling signal at a first sampling rate, and output the backscattered signal, the secondary electron signal, and the lens detection signal accordingly. The four-dimensional detection unit collects the signal electrons based on the second sampling signal in the sampling signal and at the second sampling rate, and outputs the four-dimensional transmission detection signal accordingly. The frequency of the first sampled signal is less than the frequency of the second sampled signal, and the second sampling rate is greater than the first sampling rate.

5. An electron beam detection and control device, characterized in that, It includes a detection execution module and a detection control module, among which, The detection execution module is used to connect to the electron beam detection electron microscope according to any one of claims 1-4, and is used to receive the non-transmission detection signal and the four-dimensional transmission detection signal from the electron beam detection electron microscope, and to perform conversion processing on the non-transmission detection signal and the four-dimensional transmission detection signal respectively into detection acquisition signals; The detection control module is connected to the detection control module and receives the detection acquisition data, and forms a scanning image based on the detection acquisition data. The scanning image includes a four-dimensional transmission scanning image corresponding to the thought transmission detection signal and a non-transmission scanning image corresponding to the non-transmission detection signal.

6. The electron beam detection and control device according to claim 5, characterized in that, The detection execution module includes a processing unit, a signal output unit, a first data conversion and processing unit, and a second data conversion and processing unit. The processing unit is connected to the detection control module through a first execution signal transmission interface to receive control signals from the detection control module and output execution control signals according to the control signals. The control signals are used to characterize the working state of the electron beam detector electron microscope according to any one of claims 1-4. The signal output unit is connected to the processing unit and the first control output interface. The first control interface is used to connect to the electron beam detector electron microscope according to any one of claims 1-4, and is used to output indication information from the first control output interface according to the execution control signal. The indication information includes a scanning signal and a sampling signal. The scanning signal is used to control the electron beam detector electron microscope to perform electron beam transmission scanning of the sample to be tested, and the sampling signal is used to control the electron beam detector electron microscope to collect the signal electrons emitted from the sample to be tested. The first data conversion and processing unit is used to receive the non-transmittance detection signal from the non-transmittance detection unit, process the non-transmittance detection signal into detection acquisition data, and then transmit it to the detection control module from the first execution signal transmission interface. The second data conversion and processing unit is used to receive the four-dimensional transmission detection signal from the transmission detection unit, process the four-dimensional transmission detection signal into detection acquisition data, and then transmit it to the detection control module through the second first execution signal transmission interface. The data transmission types of the first execution signal transmission interface and the second execution signal transmission interface are different.

7. The electron beam detection and control device according to claim 6, characterized in that, The detection control module includes a control application, a first control signal transmission interface and a second control signal transmission interface. The first control signal transmission interface is used to receive detection acquisition data corresponding to the non-transmissive detection signal, and the second execution signal transmission interface is used to receive detection acquisition data corresponding to the four-dimensional transmissive detection data. The control application is used to output the control signal according to the instructions input by the user, and to form the scan image according to the detection and acquisition data. The non-transmissive scan image includes at least one of backscattered electron scan image, secondary electron scan image, and in-lens detection scan image. The backscattered electron scan image is an image formed based on the backscattered signal corresponding to the backscattered electrons generated when the electron beam is focused and scanned onto the sample under test; The secondary electron scan image is an image formed by the secondary electron signal corresponding to the secondary electron generated by the electron beam focusing and scanning the sample under test; The in-lens detection scanning image is an image formed based on the in-lens detection signal corresponding to the characteristic X-rays or secondary electrons generated when the electron beam is focused and scanned onto the sample under test.

8. A detection execution module, characterized in that, It includes a processing unit, a signal output unit, a first data conversion and processing unit, and a second data conversion and processing unit; The processing unit is configured to receive a control signal through a first execution signal transmission interface, the control signal representing the operating state of the electron beam detector electron microscope according to any one of claims 1-4; The signal output unit is connected to the processing unit and the first control output interface. The first control interface is used to connect to the electron beam detector electron microscope according to any one of claims 1-4, and is used to output indication information from the first control output interface according to the control signal under the control of the processing unit. The indication information includes at least a scanning signal and a sampling signal. The scanning signal is used to control the electron beam detector electron microscope to perform electron beam transmission scanning of the sample to be tested, and the sampling signal is used to control the electron beam detector electron microscope to collect the signal electrons emitted from the sample to be tested corresponding to the scanning of the electron beam. The first data conversion and processing unit is used to receive the non-transmittance detection signal from the non-transmittance detection unit and process the non-transmittance detection signal into detection acquisition data; The second data conversion and processing unit is used to receive the four-dimensional transmission detection signal from the transmission detection unit and process the four-dimensional transmission detection signal into detection acquisition data.

9. The detection execution module according to claim 8, characterized in that, The first data conversion and processing unit is connected to the first acquisition input interface, the second acquisition input interface, and the third acquisition input interface. The first acquisition input interface is used to receive the backscattered signal corresponding to the backscattered electrons generated when the electron beam is focused and scanned to the sample under test; The second acquisition input interface is used to receive the secondary electron signal corresponding to the secondary electrons generated when the electron beam is focused and scanned on the sample under test. The third acquisition input interface is used to receive the in-lens detection signal corresponding to the characteristic X-rays or secondary electrons generated when the electron beam is focused and scanned onto the sample under test. The first data conversion and processing unit is used to process at least one of the backscattered signal, the secondary electronic signal, and the in-lens detection signal as the detection and acquisition data; The second data conversion and processing unit is connected to the fourth acquisition input interface, which is used to receive four-dimensional transmission detection signals. The second data conversion and processing unit is used to process the four-dimensional projection detection signals into the detection acquisition data.

10. The detection execution module according to claim 9, characterized in that, The first data conversion and processing unit is also connected to the first execution signal transmission interface, and outputs the detection signal through the first execution signal transmission interface; The detection execution module further includes a second execution signal transmission interface, and the second data conversion and processing unit is also connected to the second execution signal transmission interface, and outputs the detection signal through the second execution signal transmission interface; The data transmission types of the first execution signal transmission interface and the second execution signal transmission interface are different.

11. The detection execution module according to claim 10, characterized in that, in: The first data conversion and processing unit includes a first conversion unit and a first buffer unit. The first conversion unit is connected to the first acquisition input interface, the second acquisition input interface and the third acquisition input interface, and is used to perform analog-to-digital conversion processing on the non-transmittance detection signal. The first buffer unit is connected to the first conversion unit and the first execution signal transmission interface, and is used to buffer the non-transmittance detection signal after analog-to-digital conversion processing and form the detection acquisition data. The second data conversion and processing unit includes a second conversion unit and a second buffer unit. The second conversion unit is connected to the fourth acquisition input interface and is used to perform analog-to-digital conversion processing on the four-dimensional transmission detection signal. The second buffer unit is connected to the second conversion unit and the second execution signal transmission interface. The second buffer unit is used to buffer the four-dimensional transmission detection signal after analog-to-digital conversion processing and form the detection acquisition data.

12. The detection execution module according to any one of claims 10-11, characterized in that, The first execution signal transmission interface is a USB interface, and the second execution signal transmission interface is a PCI-E interface.

13. An electron beam scanning imaging method applied to the electron beam detection electron microscope according to any one of claims 1-4 and the electron beam detection control device according to any one of claims 5-7, characterized in that, The detection control module receives operation instructions and sends corresponding control signals to the detection execution module; The detection execution module outputs an indication signal according to the control signal to control the electron emission module to emit the electron beam, which is used to perform a transmission scan on the sample to be tested. The detector module acquires signal electrons emitted from the sample under test and obtains acquisition signals, wherein: the signal electrons include signal electrons corresponding to the transmission diffraction image generated by focusing on the sample under test and performing transmission scanning, and non-transmission signal electrons generated by focusing on the sample under test and performing scanning; the acquisition signals include four-dimensional transmission detection signals corresponding to the transmission diffraction image acquired at a second sampling rate, and non-transmission detection signals corresponding to the non-transmission signal electrons acquired at a first sampling rate, wherein the second sampling rate is greater than the first sampling rate; The detection and control module receives the acquired signals and forms a scanned image, which is formed based on the four-dimensional transmission detection signal and the non-transmission detection signal.

14. The electron beam scanning imaging method according to claim 13, characterized in that, The non-transmittance detection signal includes at least one of the following: a backscatter signal corresponding to the backscattered electrons generated when the electron beam is focused and scanned to the sample under test, a secondary electron signal corresponding to the secondary electrons generated when the electron beam is focused and scanned to the sample under test, and an in-lens detection signal corresponding to the characteristic X-rays generated when the electron beam is focused and scanned to the sample under test. The detection execution module receives the non-transmissive detection signal, performs analog-to-digital conversion and buffering processing to obtain detection acquisition data, and transmits it to the detection control module through the first signal transmission channel. The execution module also simultaneously receives the four-dimensional transmissive detection signal, performs analog-to-digital conversion and buffering processing to obtain detection acquisition data, and transmits it to the control module through the second signal transmission channel.

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