Test structure, contact resistivity measurement method, device, equipment and medium
By designing a test structure with insulation and separator grooves, and combining the measurement of resistance and area parameters, the problem of accuracy in contact resistivity measurement was solved, simplifying the contact resistivity test of solar cell devices and improving measurement accuracy and efficiency.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- CONTEMPORARY AMPEREX TECHNOLOGY CO LTD
- Filing Date
- 2024-11-07
- Publication Date
- 2026-05-08
AI Technical Summary
Existing technologies make it difficult to accurately measure contact resistivity, especially in solar cell devices, which affects the measurement accuracy of parameters such as fill factor (FF).
A test structure was designed, including a conductive substrate and test portions on both sides. The test portions are insulated on the sides. By setting the insulating portions and the partition grooves, the manufacturing difficulty is reduced and the current flow is simplified. The contact resistivity is calculated using measured resistance and area-related parameters.
It improves the accuracy of contact resistivity measurement, simplifies the testing process, reduces the difficulty of sample manufacturing, and enhances measurement efficiency.
Smart Images
Figure CN121995114A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of materials testing, and in particular to a test structure, a method, apparatus, equipment and medium for measuring contact resistivity. Background Technology
[0002] Contact resistivity is a crucial parameter describing contact resistance characteristics, reflecting the electrical conductivity between two contacting elements. It is an important electrical performance indicator. For example, contact resistivity significantly affects the fill factor (FF) of solar cell devices. Therefore, determining the optimal structure for contact resistivity measurement is a pressing issue. Summary of the Invention
[0003] This application provides at least one test structure, a method, apparatus, device, and medium for measuring contact resistivity.
[0004] This application provides a test structure including a substrate conductive layer, at least one first test part and a corresponding second test part. The first test part and the second test part are disposed on one side of the substrate conductive layer. The side of the first test part and the side of the corresponding second test part are electrically insulated. The second test part at least partially surrounds the corresponding first test part. Both the first test part and the second test part include at least one layer of conductive material stacked together.
[0005] In the above scheme, the first test part and the second test part are disposed on the same side of the substrate conductive layer, and the two sides are electrically insulated from each other. The test can be performed between the first test part and the corresponding second test part on the same side, which can meet the requirements of contact resistivity measurement.
[0006] In some embodiments, the test structure further includes at least one insulating portion located between a first test portion and a corresponding second test portion.
[0007] In the above scheme, the insulating part can achieve electrical insulation between the side of the first part to be tested and the side of the corresponding second part to be tested.
[0008] In some embodiments, the test structure has at least one partition groove, and the substrate conductive layer, a first test part and a corresponding second test part are arranged to form a partition groove.
[0009] In the above scheme, setting the partition groove can achieve electrical insulation between the side of the first part to be tested and the side of the corresponding second part to be tested.
[0010] In some embodiments, the conductive substrate has at least one recess on one side where the first test portion is located, and a partition groove and the recess are correspondingly provided, with the partition groove and the corresponding recess communicating with each other.
[0011] In the above scheme, the bottom of the separator can penetrate deep into the conductive layer of the substrate, thereby reducing the accuracy requirements for the depth of the separator and reducing the difficulty of manufacturing samples with this test structure.
[0012] In some embodiments, the partition groove is an annular groove; a first test part is formed on the inner side of each partition groove; the outer sides of all partition grooves in the test structure constitute the second test parts corresponding to all the first test parts on the test structure.
[0013] In the above scheme, the first test part and the second test part are separated by setting an annular groove, and the first test part is surrounded by the second test part.
[0014] In some embodiments, a first preset multiple of the projected area of the first test part along the stacking direction is smaller than the projected area of the corresponding second test part along the stacking direction.
[0015] In the above scheme, the contact resistance of the second part to be tested is less than that of the first part to be tested. Therefore, the contact resistance of the second part to be tested can be ignored during the contact resistivity test, which simplifies the contact resistivity test.
[0016] In some embodiments, the projection of the first part to be measured along the stacking direction is a regular polygon or a circle.
[0017] In the above scheme, by setting the shape of the projection of the first part to be measured, the lateral flow of current in the first part to be measured is reduced, thereby improving the measurement accuracy of contact resistivity.
[0018] In some embodiments, the distance between the side of the first test part and the opposite side of the corresponding second test part is the test part spacing distance, and the second preset multiple of the test part spacing distance is less than the reference distance; wherein, when the projection of the first test part along the stacking direction is a regular polygon, the reference distance is the side length of the regular polygon, and when the projection of the first test part along the stacking direction is a circle, the reference distance is the radius of the circle.
[0019] In the above scheme, the second preset multiple of the interval distance between the parts to be tested is less than the side length or radius of the first part to be tested. Therefore, in the process of contact resistivity testing, the interval distance between the parts to be tested can be ignored compared with the side length or radius, which simplifies the contact resistivity test.
[0020] In some embodiments, the first test portion and the second test portion include the same number of conductive material layers, and the corresponding conductive material layers in the first test portion and the second test portion have the same material and / or thickness.
[0021] In the above scheme, the first test part and the second test part have the same number of layers, and the corresponding layers have the same material and thickness, which can reduce the manufacturing difficulty of test samples with this test structure and improve test efficiency.
[0022] This application provides a method for measuring contact resistivity. The method is implemented based on at least one test sample having the test structure described in any of the preceding claims. The method includes acquiring at least two measuring resistors, where different measuring resistors correspond to different projected areas of the first test part along the stacking direction. The measuring resistors represent the resistance between the first test part and the corresponding second test part. Based on the area-related parameters of each measuring resistor and the corresponding first test part, the contact resistivity between the first test part and the substrate conductive layer is determined.
[0023] In the above scheme, the measured resistance of the sample with the above test structure is obtained. The measured resistance is related to the contact resistivity. By using the measured resistance under different projected areas and the corresponding area-related parameters, the contact resistivity can be measured.
[0024] In some embodiments, determining the contact resistivity between the first test part and the substrate conductive layer based on each measured resistor and the corresponding area-related parameters of the first test part includes: calculating the contact resistivity between the first test part and the substrate conductive layer based on the area-related parameters of each first test part, the measured resistor, and several mapping relationships, wherein the several mapping relationships include a first mapping relationship and a second mapping relationship, the first mapping relationship characterizing the relationship between several sub-resistors on the conductive path between the first test part and the corresponding second test part and the measured resistor, the several sub-resistors including the contact resistance of the first test part, and the second mapping relationship characterizing the relationship between the contact resistance of the first test part and the contact resistivity and the area-related parameters.
[0025] In the above scheme, there is a mapping relationship between the measured resistance and several sub-resistors on the conductive path. There is also a mapping relationship between the contact resistivity, the known area-related parameters and the sub-resistors. Therefore, the contact resistivity can be calculated based on the measured resistance and the area-related parameters.
[0026] In some embodiments, the plurality of sub-resistors include the resistance of the substrate conductive layer between the first test part and the corresponding second test part, and the plurality of mapping relationships also include a third mapping relationship, which characterizes the relationship between the resistance of the substrate conductive layer and the area-related parameters of the first test part.
[0027] In the above scheme, the sub-resistance on the conductive path also includes the resistance of the substrate conductive layer through which it flows. There is a mapping relationship between the resistance of the substrate conductive layer and the area-related parameters. Combining this mapping relationship can improve the accuracy of contact resistivity calculation.
[0028] In some embodiments, a first preset multiple of the projected area of the first test part along the stacking direction is smaller than the projected area of the corresponding second test part along the stacking direction; the plurality of sub-resistors are the contact resistance of the first test part and the resistance of the substrate conductive layer between the first test part and the corresponding second test part; the plurality of mapping relationships are the first mapping relationship, the second mapping relationship and the third mapping relationship.
[0029] In the above scheme, the current flows through the second part to be tested. Since the projected area of the second part to be tested is greater than the first preset multiple of the projected area of the first part to be tested, the contact resistance of the second part to be tested can be ignored compared with the contact resistance of the first part to be tested, thereby simplifying some mapping relationships and simplifying the calculation of contact resistivity.
[0030] In some embodiments, the contact resistivity between the first test part and the substrate conductive layer is calculated based on the area-related parameters, measured resistance, and several mapping relationships of each first test part, including: obtaining a fourth mapping relationship transformed from several mapping relationships, the fourth mapping relationship characterizing the relationship between the measured resistance corresponding to the first test part and the area-related parameters and contact resistivity of the first test part; and substituting each measured resistance and the corresponding area-related parameter into the fourth mapping relationship to fit the contact resistivity.
[0031] In the above scheme, a fourth mapping relationship is constructed between the measured resistance, area-related parameters, and contact resistivity. The contact resistivity is treated as an unknown parameter. By substituting the measured resistance and the corresponding area-related parameters, the contact resistivity can be fitted.
[0032] In some embodiments, the distance between the side of the first test part and the opposite side of the corresponding second test part is the test part interval distance, and the second preset multiple of the test part interval distance is less than the area-related parameter; each measured resistance and the corresponding area-related parameter are substituted into the fourth mapping relationship to fit and obtain the contact resistivity, including: constructing the fourth mapping relationship into a linear equation, wherein the independent variable and the intercept of the linear equation are the area-related parameter and the contact resistivity, respectively, and the dependent variable of the linear equation is composed of the measured resistance and the area-related parameter; each measured resistance and the corresponding area-related parameter are substituted into the linear equation for fitting to obtain the intercept of the linear equation.
[0033] In the above scheme, the distance between the parts to be measured is negligible compared to the area-related parameters, and the fourth mapping relationship can be constructed as a linear equation, thereby enabling the measurement of resistivity.
[0034] In some embodiments, the projection of the first part to be measured along the stacking direction is a square, and the area-related parameter is the side length of the square.
[0035] In the above scheme, the projected shape of the first part to be measured is set to a square to adapt to the needs of practical applications, and the corresponding side length can be used as an area-related parameter.
[0036] In some embodiments, the fourth mapping relationship represents that the measured resistance is equal to the sum of a first ratio and a second ratio. The first ratio is the ratio between the contact resistivity and the cross-sectional area of the first test part, which is determined based on an area-related parameter. The second ratio is the ratio of a first product to a second product. The first product is the product of the resistivity of the substrate conductive layer and the spacing distance between the test parts. The second product is the product of the transmission depth of the conductive path in the substrate conductive layer and a certain multiple of the area-related parameter.
[0037] This application provides a contact resistivity measuring device, which is implemented based on at least one test sample having the test structure described in any of the above. The device includes an acquisition module and a determination module. The acquisition module is used to acquire at least two measuring resistors, and different measuring resistors correspond to different projected areas of the first test part along the stacking direction. The measuring resistors represent the resistance between the first test part and the corresponding second test part. The determination module is used to determine the contact resistivity between the first test part and the substrate conductive layer based on the area-related parameters of each measuring resistor and the corresponding first test part.
[0038] This application provides an electronic device, including a memory and a processor, wherein the memory stores program instructions, and when the program instructions are executed by the processor, they implement any of the above-described methods for measuring contact resistivity.
[0039] This application provides a computer-readable storage medium storing program instructions thereon, which, when executed by a processor, implement any of the above-described methods for measuring contact resistivity.
[0040] In the above scheme, the measured resistance of the sample with the above test structure is obtained. The measured resistance is related to the contact resistivity. By using the measured resistance under different projected areas and the corresponding area-related parameters, the contact resistivity can be measured.
[0041] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and are not intended to limit this application. Attached Figure Description
[0042] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with this application and, together with the specification, serve to explain the technical solutions of this application.
[0043] Figure 1 These are schematic diagrams of the test structures provided in some embodiments of this application;
[0044] Figure 2 yes Figure 1 Cross-sectional view along the AA direction;
[0045] Figure 3 This is a schematic diagram of the test structure provided in some embodiments from another perspective;
[0046] Figure 4 This is a schematic flowchart of a contact resistivity measurement method provided in some embodiments of this application;
[0047] Figure 5 This is a schematic diagram of linear equations provided in some embodiments of this application;
[0048] Figure 6 This is a schematic diagram of the frame of a contact resistivity measuring device provided in some embodiments of this application;
[0049] Figure 7 This is a schematic diagram of the framework of an electronic device provided in some embodiments of this application;
[0050] Figure 8 This is a schematic diagram of the framework of a computer-readable storage medium provided in some embodiments of this application. Detailed Implementation
[0051] The embodiments of this application will now be described in detail with reference to the accompanying drawings.
[0052] In the following description, specific details such as particular subsystem structures, interfaces, and technologies are presented for illustrative purposes rather than for limiting purposes, in order to provide a thorough understanding of this application.
[0053] In this document, the term "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, and B existing alone. Additionally, the character " / " generally indicates that the preceding and following related objects have an "or" relationship. Furthermore, "many" in this document means two or more. Moreover, the term "at least one" in this document means any combination of at least two of any one or more of a plurality of objects. For example, including at least one of A, B, and C can mean including any one or more elements selected from the set consisting of A, B, and C.
[0054] The test structure disclosed in this application includes a conductive substrate layer, at least one first test part, and a corresponding second test part. The first and second test parts are disposed on one side of the conductive substrate layer. The side surface of the first test part and the side surface of the corresponding second test part are electrically insulated. The second test part at least partially surrounds the corresponding first test part. Both the first and second test parts include at least one layer of conductive material stacked together. By disposing the first and second test parts on the same side of the conductive substrate layer and electrically insulating their sides, testing can be performed between the first and second test parts on the same side, thus meeting the requirements for contact resistivity measurement.
[0055] The test structure disclosed in this application can be used for the measurement of contact resistivity, and there is no limitation on the specific materials involved in the contact resistivity.
[0056] Please see Figure 1 , Figure 1 This is a schematic diagram of the test structure provided in some embodiments of this application.
[0057] The test structure 10 includes a substrate conductive layer 11, at least one first test part 12, and a corresponding second test part 13.
[0058] The number of first test units 12 can be one or more, depending on the actual application requirements, and is not limited here. Each first test unit 12 corresponds to one second test unit 13. The second test units 13 corresponding to different first test units 12 can be the same or different.
[0059] In some implementation scenarios, the test structure 10 may include multiple first test units 12, and all first test units 12 may correspond to the same second test unit 13.
[0060] The first test part 12 and the second test part 13 are located on the same side of the conductive substrate layer 11. The side surface 121 of the first test part and the corresponding side surface 131 of the second test part are electrically insulated.
[0061] The second test part 13 at least partially surrounds the corresponding first test part 12.
[0062] Optionally, the second test part 13 surrounds the corresponding first test part 12.
[0063] The first test part 12 and the second test part 13 both include at least one layer of conductive material (not shown in the figure) stacked together.
[0064] In the above scheme, the first test part 12 and the second test part 13 are disposed on the same side of the substrate conductive layer 11. The side 121 of the first test part and the side 131 of the corresponding second test part are electrically insulated. The test is performed between the first test part 12 and the corresponding second test part 13 on the same side to determine the contact resistivity.
[0065] like Figure 1 In some of the embodiments shown, other material layers may be connected to the other side of the substrate conductive layer 11 without affecting the measurement of contact resistivity.
[0066] In some embodiments, the first test part 12 includes at least one conductive material layer, with the bottommost conductive material layer in contact with the substrate conductive layer 11. The contact area between two material layers is the projection of the contact surface along the stacking direction. The contact area between any two material layers can be the same, thereby enabling a more accurate determination of the contact resistivity. Specifically, the contact area between any two material layers can be the same as the projected area of the first test part 12 along the stacking direction, and the projected area can be equated with the contact area.
[0067] Of course, in some embodiments, the projected area and contact area of some conductive material layers may differ. In this case, the contact area between any two material layers may be the same, and the projected area of the first test part 12 may not be used to replace the contact area. For example, material layer A contacts material layer B, material layer B contacts material layer C, and material layer C contacts the substrate conductive layer 11. The projected areas of material layers A and C in the first test part 12 are S1, and the projected area of material layer B is S2, where S1 is less than S2. In this case, the contact area between material layer A and material layer B is S1, the contact area between material layer B and material layer C is S1, and the contact area between material layer C and the substrate conductive layer 11 is also S1. S1 can be used in the calculation. The following explanation uses the example where the projected area and contact area are the same.
[0068] Of course, in some embodiments, the contact area between the material layers may also vary.
[0069] In some embodiments, the projected area of the first test portion 12 along the stacking direction is larger than a predetermined area. In some cases, a test portion with an approximately linear contact area between material layers can be used to test the contact resistivity. In this application, the first test portion 12 may have a projected area larger than a predetermined area, and there is a certain contact surface between the material layers, with the contact area not being linear. With the above design, for materials whose own morphology is a film structure with a certain area, the shape of the first test portion 12 is closer to the shape of the material itself, which facilitates sample preparation.
[0070] In a specific application scenario, the contact resistivity to be measured is between at least one conductive material layer and the substrate conductive layer 11 contained in the first test section 12. The at least one conductive material layer and the substrate conductive layer 11 can be electrode materials for solar cells. More specifically, they can be electrode materials for perovskite solar cells. Since perovskite electrodes are typically full-surface electrodes, the non-linear contact surface of the first test section 12 more closely reflects the characteristics of the perovskite electrode material itself, facilitating the preparation of test samples. For example, existing electrodes can be adjusted to form the test structure 10 described above.
[0071] It is understood that the conductive material layer included in the first test section 12 and the conductive material layer included in the second test section 13 may be the same or different. Specifically, the number of conductive material layers included in the first test section 12 and the number of conductive material layers included in the second test section 13 may be the same or different. The conductive material included in the first test section 12 and the conductive material included in the second test section 13 may be completely the same, partially the same, or completely different.
[0072] In some implementation scenarios, when the first test part 12 contains multiple layers of conductive material, the thickness of each conductive material layer may be the same or different.
[0073] In some implementation scenarios, when the second test part 13 contains multiple layers of conductive material, the thickness of each conductive material layer may be the same or different.
[0074] Optionally, the first test part 12 and the second test part 13 include the same number of conductive material layers. The materials of corresponding layers in both can be the same. The thickness of corresponding layers can be the same. In the above scheme, the first test part and the second test part have the same number of layers, and the materials and thicknesses of corresponding layers are the same, thereby reducing the manufacturing difficulty of test samples with this test structure and improving testing efficiency.
[0075] In some embodiments, when there are multiple first test parts 12, all first test parts 12 have at least two different projected areas along the stacking direction.
[0076] In some implementation scenarios, there are multiple first test units 12, and the projected area of each first test unit 12 is different.
[0077] Optionally, the projection of the first test part 12 along the stacking direction is a regular polygon or a circle. This design reduces the lateral current flow within the first test part 12 by setting the projection shape of the first test part 12 to a regular polygon or a circle, thereby reducing the error caused by the lateral current flow during testing.
[0078] In a specific application scenario, the projection of the first test part 12 along the stacking direction is a square.
[0079] Optionally, the first preset multiple of the projected area of the first test part 12 along the stacking direction is less than the projected area of its corresponding second test part 13 along the stacking direction.
[0080] In the above design, the contact resistance corresponding to the second test part 13 can be reduced, thereby reducing the impact of the contact resistance corresponding to the second test part 13 on the test of the contact resistivity corresponding to the first test part 12, so as to improve the test effect of contact resistivity.
[0081] In a specific application scenario, the contact resistance of the second test part 13 is negligible compared to the contact resistance of the first test part 12. Furthermore, the material layer contained in the second test part 13 will not affect the measurement of contact resistivity.
[0082] Optionally, the test structure 10 further includes at least one insulating portion, which is located between a first test part 12 and a corresponding second test part 13, i.e., as shown in the figure. Figure 1 The position corresponding to the dividing groove 14. In the above design, the insulating portion enables electrical insulation between the side surface 121 of the first test part and the side surface 131 of the second test part. In some embodiments, the insulating portion may include at least a portion of insulating material to achieve electrical insulation between the side surface 121 of the first test part and the corresponding side surface 131 of the second test part.
[0083] Optionally, the test structure 10 is provided with at least one partition groove 14, and the substrate conductive layer 11, a first test part 12, and a corresponding second test part 13 are arranged to form a partition groove 14. In the above design, the partition groove 14 can achieve electrical insulation between the side surface 121 of the first test part and the side surface 131 of the second test part.
[0084] Furthermore, the dividing groove 14 can be an annular groove. The annular groove allows the second test part 13 to surround the first test part 12. During resistance measurement, the current flows from the first test part 12 through the annular groove to the second test part 13. This design allows the contact area of the current flowing through the two conductive material layers to be closer to the projected area of the first test part 12, facilitating the calculation of the sub-resistance on the conductive path and improving the measurement accuracy of the contact resistivity.
[0085] In some embodiments, a first test part 12 is formed on the inner side of a partition groove 14, and the outer sides of all partition grooves 14 in the test structure 10 constitute the second test parts 13 corresponding to all the first test parts 12 on the test structure 10.
[0086] In a specific application scenario, the test structure 10 is provided with multiple partition slots 14. The inner side of each partition slot 14 forms a first test part 12, and the outer sides of all partition slots 14 constitute the second test parts 13 corresponding to all the first test parts 12.
[0087] In some embodiments, the side surface 121 of the first test part faces the side surface 131 of its corresponding second test part, and the distance between the side surface 121 of the first test part and its opposite side surface can be called the test part spacing distance. A second preset multiple of the test part spacing distance is less than a reference distance. The reference distance can be determined based on the relevant dimensions of the first test part 12. The second preset multiple can be set according to actual application needs, for example, 5 times or 10 times. This design makes the test part spacing distance negligible compared to the reference distance, simplifying the testing of contact resistivity.
[0088] Optionally, the width of the dividing groove 14 can be uniform or non-uniform.
[0089] Furthermore, if the projection of the first part to be measured 12 along the stacking direction is a regular polygon, the reference distance can be the side length of the regular polygon. If the projection of the first part to be measured 12 along the stacking direction is a circle, the reference distance can be the radius of the circle.
[0090] In some embodiments, the first test part 12 and the corresponding second test part 13 are separated by a partition groove 14. The distance between the side surface 121 of the first test part and its opposite side surface is the width of the partition groove 14.
[0091] like Figure 1 In some of the implementation scenarios shown, the projection of the first test part 12 along the stacking direction is a square, and the reference distance is the side length of the square, denoted as d. The interval distance between test parts can be denoted as h, where d > 10h.
[0092] Please see Figure 2 , Figure 2 yes Figure 1 Cross-sectional view along the AA direction.
[0093] Optionally, such as Figure 2 In some embodiments shown, the conductive substrate 11 has at least one recess 111 on the side where the first test portion 12 is located, and the partition groove 14 and the recess 111 are correspondingly provided, with the partition groove 14 and the corresponding recess 111 communicating with each other. Figure 1 As shown, the partition groove 14 extends deep into the conductive layer 11 of the substrate.
[0094] In the above scheme, the bottom of the separator can penetrate deep into the conductive layer of the substrate, thereby reducing the accuracy requirements for the depth of the separator and reducing the difficulty of manufacturing samples with this test structure.
[0095] Of course, in some embodiments, the substrate conductive layer 11 may not have any recesses within the range of the first test portion 12, the second test portion 13, and the partition groove 14. The bottom surface of the partition groove 14 is flush with the upper surface of the substrate conductive layer 11.
[0096] The test sample with test structure 10 can be used to measure contact resistivity. More specifically, it can be used to measure the contact resistivity between the first test part 12 and the substrate conductive layer 11.
[0097] In some embodiments, when a test sample having test structure 10 is used for measuring contact resistivity, resistance measurement is performed between the first test part 12 and the corresponding second test part 13.
[0098] like Figure 2 As shown, during the measurement process, a resistance testing device can be connected between the top surface of the first test part 12 and the top surface of the corresponding second test part 13 to obtain the resistance measurement result between the first test part 12 and the corresponding second test part 13.
[0099] During the measurement process, the current transmission path is as follows: Figure 2 The middle arrow indicates that the conductive substrate 11 can support the flow of current in the direction of material layer extension, i.e., lateral flow.
[0100] In some embodiments, the substrate conductive layer 11 may be a semiconductor material.
[0101] In some cases, when measuring resistance, a certain voltage is applied using ordinary resistance measuring instruments. This bias voltage may affect the accuracy of the resistance measurement. For example... Figure 2 As shown, during the measurement process, the current flows through the substrate conductive layer 11 in opposite directions, so that the measurement is not affected by the bias voltage. Accurate measurement can be achieved using ordinary resistance measuring instruments, such as ohmmeters.
[0102] In some embodiments, the uppermost conductive material layer of the first test part 12 can be a material with satisfactory conductivity. Using a material with high conductivity as the uppermost material of the first test part 12 can make the potential of the uppermost conductive material layer more uniform, thereby allowing the current to be closer to the surface. Figure 2 The direction of current flow shown reduces lateral flow and improves test accuracy.
[0103] Please see Figure 3 , Figure 3 This is a schematic diagram of the test structure provided in some embodiments from another perspective.
[0104] In such Figure 3In the illustrated embodiment, the test structure 10 includes a plurality of first test units 12 and second test units 13. Each first test unit 12 corresponds to the same second test unit 13.
[0105] The test structure 10 is provided with a plurality of partition slots 14, the number of which is the same as the number of the first test parts 12. A first test part 12 is formed on the inner side of each partition slot 14, and the outer sides of all partition slots 14 constitute a second test part 13.
[0106] In having such Figure 3 When the test sample of the test structure 10 shown is used to measure the contact resistivity, resistance measurements are performed between each first test part 12 and the second test part 13.
[0107] Please see Figure 4 , Figure 4 This is a schematic flowchart illustrating a contact resistivity measurement method provided in some embodiments of this application. The contact resistivity measurement method provided in these embodiments can be implemented based on several test samples. The test samples have any of the aforementioned test structures, and all test samples used have at least two first test portions with different projected areas.
[0108] Specifically, the method may include:
[0109] Step S410: Obtain at least two measuring resistors.
[0110] Among them, the projected area of the first test part along the stacking direction is different for different measuring resistors.
[0111] The measured resistance represents the resistance between the first part under test and the corresponding second part under test. The measured resistance can be obtained based on the resistance measurement between the first part under test and its corresponding second part under test.
[0112] In one implementation scenario, the side surface of the first part under test is electrically insulated from the side surface of the corresponding second part under test, and the bottom surface of the first part under test is electrically connected to the bottom surface of the corresponding second part under test through a substrate conductive layer.
[0113] In a specific application scenario, resistance measurement can be performed between the top surfaces of the first and second parts under test. The two probes of the resistance testing device are respectively brought into contact with the top surfaces of the first and second parts under test.
[0114] All the first test parts contain the same number of conductive material layers, and the material and thickness of the corresponding layers are the same.
[0115] In some embodiments, all test samples may have multiple first test parts with different projected areas. The number of first test parts and the projected area of each first test part can be set according to specific application requirements.
[0116] In some embodiments, one or more test samples can be used. Furthermore, if a single test sample is used, the difference between the first test portions of the same test sample, apart from the projected area, is smaller, which can reduce the test error of contact resistivity and improve the test accuracy.
[0117] In some embodiments, resistance measurements are performed on all first test portions in all test samples to obtain at least two measured resistances. Alternatively, in some embodiments, resistance measurements may be performed on portions of all first test portions to obtain at least two measured resistances.
[0118] In some embodiments, the projected areas of all first test parts in all test samples may be different. Alternatively, in some embodiments, the projected areas of all first test parts may be divided into multiple types, with multiple first test parts provided for each type of projected area.
[0119] In some embodiments, when multiple first test units with the same projected area are provided, they can be grouped together. The resistance measurement results of multiple first test units in the same group can be used to obtain a single measured resistance, representing the resistance between the first test unit with that projected area and the corresponding second test unit. Using multiple first test units with the same projected area in the test can reduce measurement errors and improve measurement accuracy.
[0120] Step S420: Based on each measured resistor and the corresponding area-related parameters of the first test part, determine the contact resistivity between the first test part and the substrate conductive layer.
[0121] The area-related parameters can be correlated with the projected area of the first part under test along the stacking direction. Different projected areas of the first part under test correspond to different area-related parameters.
[0122] In some embodiments, the area-related parameters may be positively correlated with the projected area.
[0123] It is understandable that the projection shape of the first part to be measured along the stacking direction can be set according to the actual application needs, and the area-related parameters can also be set accordingly.
[0124] Furthermore, the projected shape can be a regular polygon or a circle.
[0125] In some embodiments, the projected shape of the first test part along the stacking direction is a regular polygon or a circle. By setting the shape of the first test part, the lateral current flow in the first test part can be reduced, thereby improving the accuracy of contact resistivity measurement.
[0126] Different projection shapes can have different area-related parameters. For example, the projection shape can be a square, and the corresponding area-related parameter can be the side length or perimeter of the square. The projection shape can be a circle, and the corresponding area-related parameter can be the radius or diameter of the circle.
[0127] The first test part includes at least one layer of conductive material stacked together. The measured contact resistivity is the contact resistivity between the first test part and the substrate conductive layer.
[0128] In some embodiments, the first test part includes a conductive material layer, and the measured contact resistivity is the contact resistivity between the conductive material layer and the substrate conductive layer.
[0129] In some embodiments, the first test portion includes multiple layers of conductive material, and the measured contact resistivity is the sum of the contact resistivity between contacting material layers in the multiple conductive material layers and the contact resistivity between the bottommost material layer and the substrate conductive layer. For example, the conductive material layers included in the first test portion are A, B, and C from top to bottom, and the measured contact resistivity is the sum of the contact resistivity between A and B, the contact resistivity between B and C, and the contact resistivity between C and the substrate conductive layer.
[0130] In some embodiments, the step of determining the contact resistivity may include: calculating the contact resistivity between the first test part and the substrate conductive layer based on area-related parameters of each first test part, the measured resistance, and several mapping relationships.
[0131] The mapping relationships may include a first mapping relationship and a second mapping relationship. The first mapping relationship characterizes the relationship between several sub-resistances and the measured resistance on the conductive path between the first test part and the corresponding second test part. The several sub-resistances may include the contact resistance of the first test part, and the second mapping relationship characterizes the relationship between the contact resistance of the first test part and contact resistivity and area-related parameters.
[0132] Understandably, when measuring the resistance between the first test part and the corresponding second test part, the measured resistance is related to the resistance along the path through which the current flows. The current flow path includes the first test part, and the sub-resistors along the conductive path may include the contact resistance corresponding to the first test part. The contact resistance corresponding to the first test part is related to the corresponding area-related parameters and the contact resistivity to be determined.
[0133] Among them, several mapping relationships can represent the relationship between area-related parameters, measured resistance and contact resistivity. Therefore, based on several mapping relationships, area-related parameters and measured resistance, contact resistivity can be calculated.
[0134] In a specific application scenario, the first mapping relationship can be expressed as R = R1 + ... + Ri. Here, Ri represents the sub-resistance on the conductive path, and R1 represents the contact resistance corresponding to the first part under test.
[0135] In one implementation scenario, the second mapping relationship can characterize the contact resistance of the first part under test as equal to the ratio between the contact resistivity and the cross-sectional area of the first part under test.
[0136] In a specific application scenario, the projected shape of the first part to be measured is a square, and the second mapping relationship can be... Where, ρ c This represents the contact resistivity between the first part under test and the substrate conductive layer. d represents the side length of the square. The unit of contact resistivity can be Ω·cm. 2 .
[0137] In some embodiments, current flows between the first test part and the corresponding second test part, and the plurality of sub-resistors on the conductive path may further include the resistance corresponding to the path between the first test part and the corresponding second test part. This resistance value is related to the cross-sectional area of the path through which the current flows, and the cross-sectional area of the path through which the current flows is related to the area-related parameter of the first test part; therefore, this resistance value is related to the area-related parameter of the first test part.
[0138] In some implementation scenarios, the sub-resistors along the conductive path include the resistance of the substrate conductive layer between the first test part and the corresponding second test part. The mapping relationships may also include a third mapping relationship, which can represent the relationship between the resistance of the substrate conductive layer and the area-related parameters of the first test part.
[0139] In a specific application scenario, the third mapping relationship can characterize the relationship between the resistance R2, the material resistivity ρ, the path length L, and the cross-sectional area S of the path between the first test part and the corresponding second test part. Specifically, the third mapping relationship can be...
[0140] Furthermore, in such Figure 1 In the application scenario shown, the third mapping relationship can be Where ρ is the resistivity of the substrate conductive layer, h represents the spacing between the parts to be measured, y represents the depth of current transmission in the substrate conductive layer, and d represents the side length of the square.
[0141] In some embodiments, the sub-resistors on the conductive path may include the contact resistance of the first test portion, the resistance of the substrate conductive layer between the first test portion and the corresponding second test portion, and may also include the contact resistance of the second test portion. Accordingly, the mapping relationships may also include mapping relationships related to the contact resistance of the second test portion.
[0142] In a specific application scenario, the first mapping relationship can be expressed as R = R1 + R2 + R3. R3 represents the contact resistance of the second part to be measured.
[0143] Furthermore, the projected area of the second test part is larger than a preset area. For example, the projected area of the second test part is larger than a certain multiple of the projected area of the first test part. This multiple can be set according to actual application needs. It is understood that contact resistance is negatively correlated with contact area; the larger the contact area, the smaller the contact resistance. The above design makes the contact resistance of the second test part negligible among the several sub-resistors. Therefore, the several sub-resistors on the conductive path can be considered to include only the contact resistance of the first test part and the resistance of the substrate conductive layer between the first test part and the corresponding second test part.
[0144] In some implementation scenarios, the sub-resistances along the conductive path include the contact resistance of the first test part and the resistance of the substrate conductive layer between the first test part and the corresponding second test part. Several mapping relationships are defined as a first mapping relationship, a second mapping relationship, and a third mapping relationship.
[0145] In a specific application scenario, the first mapping relationship can be expressed as R = R1 + R2. Here, R1 represents the contact resistance corresponding to the first part under test, and R2 represents the resistance of the substrate conductive layer between the first part under test and the corresponding second part under test.
[0146] In some embodiments, the step of calculating the contact resistivity may include: obtaining a fourth mapping relationship derived from several mapping relationships, wherein the fourth mapping relationship characterizes the relationship between the measured resistance corresponding to the first measured part and the area-related parameters and contact resistivity of the first measured part. The contact resistivity is then obtained by substituting each measured resistance and its corresponding area-related parameter into the fourth mapping relationship and fitting the data.
[0147] Among them, the contact resistivity is an unknown parameter in the fourth mapping relationship. The contact resistivity can be obtained by fitting each measured resistance with the corresponding area-related parameters.
[0148] In a specific application scenario, the fourth mapping relation, obtained by transforming several mapping relations, can be represented as follows:
[0149] Furthermore, the contact resistance of the second part to be measured can be neglected among the several sub-resistors, and the fourth mapping relationship obtained by transforming several mapping relationships can be expressed as follows:
[0150] In some embodiments, the second preset multiple of the interval distance between the test parts is less than the area-related parameter, and the interval distance between the test parts is the distance between the side of the first test part and the opposite side of the corresponding second test part. Therefore, the interval distance between the test parts can be ignored compared to the area-related parameter, which simplifies the fourth mapping relationship and improves the efficiency of contact resistivity measurement.
[0151] Of course, in some embodiments, the parameters related to the distance between the measured parts and the area may not satisfy the above relationship.
[0152] In some embodiments, the accuracy of contact resistance measurement can be improved by increasing the total number of different projected areas.
[0153] In one implementation scenario, the fourth mapping relationship is constructed as a linear equation. Further, the independent variables and intercept of the linear equation are the area-related parameter and the contact resistivity, respectively, while the dependent variable consists of the measured resistance and the area-related parameter. By substituting each measured resistance and its corresponding area-related parameter into the linear equation for fitting, the intercept of the linear equation is obtained.
[0154] In a specific application scenario, the first and second test parts are separated by a partition groove. The distance between the test parts can be the width of the partition groove, such as... Figure 1 h in the text.
[0155] In some implementation scenarios, the fourth mapping relationship represents the measured resistance as the sum of the first ratio and the second ratio. The first ratio is the ratio between the contact resistivity and the cross-sectional area of the first test part, which is determined based on area-related parameters. The second ratio is the ratio of the first product to the second product. The first product is the product of the resistivity of the substrate conductive layer and the spacing distance between the test parts, which is the distance between the side of the first test part and the opposite side of the corresponding second test part; specifically, it can be the width of the partition groove between the first test part and the corresponding second test part. The second product is the product of the transmission depth of the conductive path in the substrate conductive layer and a certain multiple of the area-related parameters.
[0156] The cross-sectional area of the first part to be measured can be the projected area along the stacking direction.
[0157] In a specific application scenario, the second preset multiple of the interval distance between the parts to be measured is less than the side length of the square. The fourth mapping relationship, obtained by transforming several mapping relationships, can be expressed as follows:
[0158]
[0159] Please see Figure 5 , Figure 5 This is a schematic diagram of linear equations provided in some embodiments of this application.
[0160] like Figure 5 As shown, the linear equation constructed from the fourth mapping relation can be expressed as: In the linear equation, the independent variable is d, and the intercept is the contact resistivity ρ. c The dependent variable is Rd 2 .
[0161] Please see Figure 6 , Figure 6 This is a schematic diagram of the frame of a contact resistivity measuring device provided in some embodiments of this application.
[0162] The contact resistivity measuring device 60 is implemented based on at least one test sample having any of the test structures described above. The contact resistivity measuring device 60 includes an acquisition module 61 and a determination module 62. The acquisition module 61 is used to acquire at least two measuring resistors, and different measuring resistors correspond to different projected areas of the first test part along the stacking direction. The measuring resistors represent the resistance between the first test part and the corresponding second test part. The determination module 62 is used to determine the contact resistivity between the first test part and the substrate conductive layer based on the area-related parameters of each measuring resistor and the corresponding first test part.
[0163] In the above scheme, the measured resistance of the sample with the above test structure is obtained. The measured resistance is related to the contact resistivity. By using the measured resistance under different projected areas and the corresponding area-related parameters, the contact resistivity can be measured.
[0164] In some embodiments, the determining module 62 is used to determine the contact resistivity between the first test part and the substrate conductive layer based on each measured resistor and the area-related parameters of the corresponding first test part. Specifically, it includes: calculating the contact resistivity between the first test part and the substrate conductive layer based on the area-related parameters of each first test part, the measured resistor, and several mapping relationships. The several mapping relationships include a first mapping relationship and a second mapping relationship. The first mapping relationship characterizes the relationship between several sub-resistors on the conductive path between the first test part and the corresponding second test part and the measured resistor. The several sub-resistors include the contact resistance of the first test part. The second mapping relationship characterizes the relationship between the contact resistance of the first test part and the contact resistivity and the area-related parameters.
[0165] In the above scheme, there is a mapping relationship between the measured resistance and several sub-resistors on the conductive path. There is also a mapping relationship between the contact resistivity, the known area-related parameters and the sub-resistors. Therefore, the contact resistivity can be calculated based on the measured resistance and the area-related parameters.
[0166] In some embodiments, the plurality of sub-resistors include the resistance of the substrate conductive layer between the first test part and the corresponding second test part, and the plurality of mapping relationships also include a third mapping relationship, which characterizes the relationship between the resistance of the substrate conductive layer and the area-related parameters of the first test part.
[0167] In the above scheme, the sub-resistance on the conductive path also includes the resistance of the substrate conductive layer through which it flows. There is a mapping relationship between the resistance of the substrate conductive layer and the area-related parameters. Combining this mapping relationship can improve the accuracy of contact resistivity calculation.
[0168] In some embodiments, a first preset multiple of the projected area of the first test part along the stacking direction is smaller than the projected area of the corresponding second test part along the stacking direction; the plurality of sub-resistors are the contact resistance of the first test part and the resistance of the substrate conductive layer between the first test part and the corresponding second test part; the plurality of mapping relationships are the first mapping relationship, the second mapping relationship and the third mapping relationship.
[0169] In the above scheme, the current flows through the second part to be tested. Since the projected area of the second part to be tested is greater than the first preset multiple of the projected area of the first part to be tested, the contact resistance of the second part to be tested can be ignored compared with the contact resistance of the first part to be tested, thereby simplifying some mapping relationships and simplifying the calculation of contact resistivity.
[0170] In some embodiments, the determining module 62 is used to calculate the contact resistivity between the first test part and the substrate conductive layer based on the area-related parameters, measured resistance, and several mapping relationships of each first test part. Specifically, it includes: obtaining a fourth mapping relationship transformed from several mapping relationships, the fourth mapping relationship characterizing the relationship between the measured resistance corresponding to the first test part and the area-related parameters and contact resistivity of the first test part; and substituting each measured resistance and the corresponding area-related parameter into the fourth mapping relationship to fit the contact resistivity.
[0171] In the above scheme, a fourth mapping relationship is constructed between the measured resistance, area-related parameters, and contact resistivity. The contact resistivity is treated as an unknown parameter. By substituting the measured resistance and the corresponding area-related parameters, the contact resistivity can be fitted.
[0172] In some embodiments, the distance between the side of the first test part and the opposite side of the corresponding second test part is the test part interval distance, and the second preset multiple of the test part interval distance is less than the area-related parameter; the determining module 62 is used to substitute each measured resistance and the corresponding area-related parameter into the fourth mapping relationship to fit and obtain the contact resistivity, specifically including: constructing the fourth mapping relationship into a linear equation, wherein the independent variable and the intercept of the linear equation are the area-related parameter and the contact resistivity, respectively, and the dependent variable of the linear equation is composed of the measured resistance and the area-related parameter; and substituting each measured resistance and the corresponding area-related parameter into the linear equation for fitting to obtain the intercept of the linear equation.
[0173] In the above scheme, the distance between the parts to be measured is negligible compared to the area-related parameters, and the fourth mapping relationship can be constructed as a linear equation, thereby enabling the measurement of resistivity.
[0174] In some embodiments, the projection of the first part to be measured along the stacking direction is a square, and the area-related parameter is the side length of the square.
[0175] In the above scheme, the projected shape of the first part to be measured is set to a square to adapt to the needs of practical applications, and the corresponding side length can be used as an area-related parameter.
[0176] In some embodiments, the fourth mapping relationship represents that the measured resistance is equal to the sum of a first ratio and a second ratio. The first ratio is the ratio between the contact resistivity and the cross-sectional area of the first test part, which is determined based on an area-related parameter. The second ratio is the ratio of a first product to a second product. The first product is the product of the resistivity of the substrate conductive layer and the spacing distance between the test parts. The second product is the product of the transmission depth of the conductive path in the substrate conductive layer and a certain multiple of the area-related parameter.
[0177] Please see Figure 7 , Figure 7 This is a schematic diagram of the framework of an electronic device provided in some embodiments of this application.
[0178] The electronic device 70 includes a memory 71 and a processor 72 coupled to each other. The memory 71 stores program instructions, and the processor 72 executes the program instructions stored in the memory 71 to implement any of the contact resistivity measurement methods described above. In a specific implementation scenario, the electronic device 70 may include, but is not limited to, a microcomputer or a server. In addition, the electronic device 70 may also include mobile devices such as laptops and tablets, without limitation.
[0179] Specifically, processor 72 controls itself and memory 71 to implement any of the aforementioned methods for measuring contact resistivity. Processor 72 can also be referred to as a CPU (Central Processing Unit). Processor 72 may be an integrated circuit chip with signal processing capabilities. Processor 72 can also be a general-purpose processor, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, or discrete hardware components. A general-purpose processor can be a microprocessor or any conventional processor. Furthermore, processor 72 can be implemented using integrated circuit chips.
[0180] Please see Figure 8 , Figure 8 This is a schematic diagram of the framework of a computer-readable storage medium provided in some embodiments of this application.
[0181] The computer-readable storage medium 80 stores program instructions 81 that can be executed by a processor. When executed by the processor, the program instructions 81 are used to implement any of the above-described methods for measuring contact resistivity.
[0182] The description of the various embodiments above tends to emphasize the differences between the various embodiments. The similarities or similarities between them can be referred to, and for the sake of brevity, they will not be repeated here.
[0183] In the several embodiments provided in this application, it should be understood that the disclosed methods and apparatus can be implemented in other ways. For example, the apparatus implementations described above are merely illustrative. For instance, the division of modules or units is only a logical functional division, and in actual implementation, there may be other division methods. For example, units or components may be combined or integrated into another subsystem, or some features may be ignored or not executed. Furthermore, the mutual coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection of devices or units may be electrical, mechanical, or other forms.
[0184] Furthermore, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit. If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) or processor to execute all or part of the steps of the methods in the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.
Claims
1. A test structure, characterized in that, The test structure includes: Substrate conductive layer; At least one first test part and a corresponding second test part; the first test part and the second test part are disposed on one side of the substrate conductive layer, the side of the first test part and the side of the corresponding second test part are electrically insulated, the second test part at least partially surrounds the corresponding first test part, and both the first test part and the second test part include at least one layer of conductive material stacked together.
2. The test structure according to claim 1, characterized in that, The test structure further includes at least one insulating part, wherein the insulating part is located between a first test part and a corresponding second test part.
3. The test structure according to claim 1, characterized in that, The test structure is provided with at least one partition groove, and the substrate conductive layer, a first test part and a corresponding second test part are arranged to form a partition groove.
4. The test structure according to claim 3, characterized in that, The conductive substrate has at least one recess on the side where the first test part is located. The partition groove and the recess are correspondingly provided, and the partition groove and the corresponding recess are connected.
5. The test structure according to claim 3 or 4, characterized in that, The dividing groove is an annular groove; a first test part is formed on the inner side of each dividing groove; the outer sides of all the dividing grooves in the test structure constitute the second test parts corresponding to all the first test parts on the test structure.
6. The test structure according to any one of claims 1 to 5, characterized in that, The first preset multiple of the projected area of the first test part along the stacking direction is less than the projected area of the corresponding second test part along the stacking direction.
7. The test structure according to any one of claims 1 to 6, characterized in that, The projection of the first part to be tested along the stacking direction is a regular polygon or a circle.
8. The test structure according to any one of claims 1 to 7, characterized in that, The distance between the side of the first part to be tested and the opposite side of the corresponding second part to be tested is the interval distance between the parts to be tested, and the second preset multiple of the interval distance between the parts to be tested is less than the reference distance; Wherein, if the projection of the first part to be measured along the stacking direction is a regular polygon, the reference distance is the side length of the regular polygon; if the projection of the first part to be measured along the stacking direction is a circle, the reference distance is the radius of the circle.
9. The test structure according to any one of claims 1 to 8, characterized in that, The first test part and the second test part include the same number of conductive material layers, and the corresponding conductive material layers in the first test part and the second test part have the same material and / or thickness.
10. A method for measuring contact resistivity, characterized in that, The method is implemented based on at least one test sample having the test structure as described in any one of claims 1 to 9, and the method includes: At least two measuring resistors are obtained, and different measuring resistors correspond to different projected areas of the first test part along the stacking direction. The measuring resistors represent the resistance between the first test part and the corresponding second test part. Based on the measured resistances and the corresponding area-related parameters of the first test part, the contact resistivity between the first test part and the substrate conductive layer is determined.
11. The method according to claim 10, characterized in that, The determination of the contact resistivity between the first test part and the substrate conductive layer based on each of the measured resistors and the corresponding area-related parameters of the first test part includes: Based on the area-related parameters of each of the first test parts, the measured resistance, and several mapping relationships, the contact resistivity between the first test part and the substrate conductive layer is calculated. The several mapping relationships include a first mapping relationship and a second mapping relationship. The first mapping relationship characterizes the relationship between several sub-resistances on the conductive path between the first test part and the corresponding second test part and the measured resistance. The several sub-resistances include the contact resistance of the first test part. The second mapping relationship characterizes the relationship between the contact resistance of the first test part and the contact resistivity and the area-related parameters.
12. The method according to claim 11, characterized in that, The plurality of sub-resistors include the resistance of the substrate conductive layer between the first test part and the corresponding second test part, and the plurality of mapping relationships also include a third mapping relationship, which characterizes the relationship between the resistance of the substrate conductive layer and the area-related parameters of the first test part.
13. The method according to claim 12, characterized in that, The first preset multiple of the projected area of the first part to be tested along the stacking direction is less than the projected area of the corresponding second part to be tested along the stacking direction. The plurality of sub-resistors are the contact resistance of the first test part and the resistance of the substrate conductive layer between the first test part and the corresponding second test part; the plurality of mapping relationships are the first mapping relationship, the second mapping relationship and the third mapping relationship.
14. The method according to any one of claims 11 to 13, characterized in that, The calculation of the contact resistivity between the first test part and the substrate conductive layer based on the area-related parameters of each of the first test parts, the measured resistance, and several mapping relationships includes: A fourth mapping relationship is obtained by transforming the plurality of mapping relationships. The fourth mapping relationship characterizes the relationship between the measured resistance of the first part under test and the area-related parameters of the first part under test and the contact resistivity. The contact resistivity is obtained by substituting each of the measured resistances and the corresponding area-related parameters into the fourth mapping relationship and fitting the data.
15. The method according to claim 14, characterized in that, The distance between the side of the first part to be tested and the opposite side of the corresponding second part to be tested is the interval distance between the parts to be tested, and the second preset multiple of the interval distance between the parts to be tested is less than the area-related parameter; The step of substituting each of the measured resistances and the corresponding area-related parameters into the fourth mapping relationship to fit and obtain the contact resistivity includes: The fourth mapping relationship is constructed as a linear equation, wherein the independent variable and the intercept of the linear equation are the area-related parameter and the contact resistivity, respectively, and the dependent variable of the linear equation consists of the measured resistance and the area-related parameter. Substitute each of the measured resistors and the corresponding area-related parameters into the linear equation for fitting, and obtain the intercept of the linear equation.
16. The method according to claim 15, characterized in that, The projection of the first part to be measured along the stacking direction is a square, and the area-related parameter is the side length of the square; And / or, the fourth mapping relationship characterizes the measured resistance as equal to the sum of a first ratio and a second ratio, wherein the first ratio is the ratio between the contact resistivity and the cross-sectional area of the first test part, the cross-sectional area being determined based on the area-related parameter, and the second ratio is the ratio of a first product to a second product, wherein the first product is the product of the resistivity of the substrate conductive layer and the distance between the test parts, and the second product is the product of the transmission depth of the conductive path in the substrate conductive layer and a multiple of the area-related parameter.
17. A device for measuring contact resistivity, characterized in that, The apparatus is based on at least one test sample having the test structure as described in any one of claims 1 to 9, and the apparatus comprises: The acquisition module is used to acquire at least two measuring resistors, wherein different measuring resistors correspond to different projected areas of the first test part along the stacking direction, and the measuring resistors represent the resistance between the first test part and the corresponding second test part; The determination module is used to determine the contact resistivity between the first test part and the substrate conductive layer based on each of the measured resistors and the area-related parameters of the corresponding first test part.
18. An electronic device, characterized in that, The method includes a memory and a processor, wherein the memory stores program instructions that, when executed by the processor, implement the method according to any one of claims 10 to 16.
19. A computer-readable storage medium having program instructions stored thereon, characterized in that, When the program instructions are executed by the processor, they implement the method described in any one of claims 10 to 16.