Multilayer electronic component

Abstract

The present disclosure provides a multilayer electronic component. The multilayer electronic component includes: a body including a capacitance forming portion including a dielectric layer and internal electrodes alternately disposed with the dielectric layer in a first direction, and cover portions disposed on both surfaces of the capacitance forming portion in the first direction; and an external electrode disposed on the main body, in which the covering portion includes titanium (Ti), gallium (Ga), and magnesium (Mg), and when the number of moles of the gallium (Ga) of the covering portion with respect to 100 moles of titanium (Ti) is CG and the number of moles of the magnesium (Mg) of the covering portion with respect to 100 moles of titanium (Ti) is CM, 0.2 < = CG / CMlt is satisfied; and 1.0.

Description

[0001] This application claims the benefit of priority to Korean Patent Application No. 10-2024-0153643, filed on November 1, 2024, with the Korean Intellectual Property Office, the entire disclosure of which is incorporated herein by reference. Technical Field

[0002] This disclosure relates to a multilayer electronic component. Background Technology

[0003] Multilayer ceramic capacitors (MLCCs, a type of multilayer electronic component) are chip capacitors that can be mounted on printed circuit boards of various electronic products, such as imaging devices (including liquid crystal displays (LCDs) or plasma display panels (PDPs)), computers, smartphones, or mobile phones, for charging or discharging from them.

[0004] Such multilayer ceramic capacitors are small in size, capable of achieving high capacitance, and easy to mount on printed circuit boards, making them suitable as components in a variety of electronic devices. As various electronic devices, such as computers and mobile devices, have smaller dimensions and higher output, the demand for multilayer ceramic capacitors with reduced size and higher capacitance has increased.

[0005] With the advancements in miniaturization and high capacitance, the need for protecting the areas used to form capacitors is increasing. Typically, this is achieved by adding an edge region around the capacitor formation area. However, as structural designs continue to evolve to achieve miniaturization and high capacitance, the increased size of the capacitor formation area and the decreasing size of the edge regions protecting it can lead to reduced moisture resistance, reliability, and strength issues in multilayer ceramic capacitors.

[0006] To address the aforementioned issues, the grain size of the cover can be designed to be small and uniform. Reducing the grain size can improve the breakdown voltage characteristics, but this may lead to the following problem: the increased number of pores due to reduced density may result in a decrease in reliability. Summary of the Invention

[0007] One aspect of this disclosure is to provide a multilayer electronic component that has improved moisture-proof reliability by increasing the density of the covering portion to suppress the formation of pores.

[0008] One aspect of this disclosure is to provide a multilayer electronic component with improved breakdown voltage characteristics.

[0009] However, the various problems to be solved by this disclosure are not limited to those described above, and can be more easily understood in the process of explaining specific embodiments of this disclosure.

[0010] According to one aspect of this disclosure, a multilayer electronic component may include: a body comprising a capacitor forming portion and a cover portion, the capacitor forming portion comprising a dielectric layer and an inner electrode alternately disposed with the dielectric layer in a first direction, the cover portion being disposed on two surfaces of the capacitor forming portion in the first direction; and an outer electrode disposed on the body, wherein the cover portion may comprise titanium (Ti), gallium (Ga), and magnesium (Mg), and when the molar number of gallium (Ga) in the cover portion relative to 100 moles of titanium (Ti) is CG, and the molar number of magnesium (Mg) in the cover portion relative to 100 moles of titanium (Ti) is CM, 0.2 ≤ CG / CM < 1.0 may be satisfied. Attached Figure Description

[0011] The above and other aspects, features and advantages of this disclosure will become clearer from the following detailed embodiments, taken in conjunction with the accompanying drawings, in which: Figure 1 A perspective view of a multilayer electronic assembly according to an embodiment of the present disclosure is shown schematically; Figure 2 An exploded perspective view of the stacked structure of the main body according to an embodiment of the present disclosure is shown schematically; Figure 3 schematically shown Figure 1 A cross-sectional view taken along line I-I'; Figure 4 schematically shown Figure 1 A cross-sectional view taken along line II-II'; Figure 5 Another embodiment according to this disclosure is illustrated schematically. Figure 1 A cross-sectional view taken along line II-II'; Figure 6A It is an image of the cross-section of the covered part taken using a transmission electron microscope (TEM); Figure 6B The images are of the same cross-section of the covered portion obtained by surface scanning of magnesium (Mg) in TEM-energy dispersive X-ray spectroscopy (EDS) mode; Figure 6C These are images of the same cross-section of the covered area obtained by surface scanning of gallium (Ga) in TEM-EDS mode; Figure 7A The image shows the pores observed in a cross-section of the cover portion of Comparative Example 1; Figure 7B The image shows the pores observed in a cross-section of the cover portion in Example 1; Figure 8A This is a graph showing the number of pores (ea) observed in the cross-section of the cover portion of Comparative Example 1 and Example 1; Figure 8B This is a graph showing the porosity (%) observed in the cross-section of the cover portion of Comparative Example 1 and Example 1; Figure 9A These are images of the cross-section of the cover portion of a comparative example before sintering, taken using a transmission electron microscope (TEM). Figure 9B This is an example image of a cross-section of the cover before sintering, taken using a transmission electron microscope (TEM). Figure 10A These are cross-sectional images of the cover and capacitor-forming part of the comparative example, taken using a transmission electron microscope (TEM). Figure 10B These are cross-sectional images of the cover and capacitor-forming part of an example, taken using a transmission electron microscope (TEM). Figure 11A This is a graph used to evaluate the moisture-proof reliability of Comparative Example 2; Figure 11B This is a graph used to evaluate the moisture-proof reliability of Example 2; Figure 12A Images of the cross-section of the comparative example's covering portion, taken using a transmission electron microscope (TEM), and images of the dielectric grains observed, differentiated using a program; and Figure 12B The images show a cross-section of the cover portion of an example image taken using a transmission electron microscope (TEM) and images of the dielectric grains observed using a procedure to distinguish them. Detailed Implementation

[0012] In the following description, embodiments of the present disclosure will be illustrated with reference to the accompanying drawings. However, the present disclosure may be exemplified in many different forms and should not be construed as limiting oneself to the specific embodiments set forth herein. Rather, these embodiments are provided so that the present disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art. Therefore, for clarity of description, the shape and size of the elements in the drawings may be exaggerated, and in the drawings, elements indicated by the same reference numerals are the same elements.

[0013] In the accompanying drawings, irrelevant descriptions will be omitted to clearly depict the present disclosure, and the thickness of each layer and each region may be enlarged to clearly represent multiple layers and regions. The same reference numerals will be used to describe the same elements having the same function within the scope of the same concept. Throughout the specification, unless otherwise specifically stated, when an element is referred to as "comprising" or "including" another element, it means that the element may also include other elements without excluding them.

[0014] In the accompanying drawings, the first direction can be defined as the stacking direction or the thickness direction, the second direction can be defined as the length direction, and the third direction can be defined as the width direction.

[0015] Multilayer electronic components Figure 1 A perspective view of a multilayer electronic assembly according to an embodiment of the present disclosure is shown schematically.

[0016] Figure 2 An exploded perspective view of the stacked structure of the main body according to an embodiment of the present disclosure is shown schematically.

[0017] Figure 3 schematically shown Figure 1 A cross-sectional view taken along line I-I'.

[0018] Figure 4 schematically shown Figure 1 A cross-sectional view taken along line II-II'.

[0019] Figure 5 Another embodiment according to this disclosure is illustrated schematically. Figure 1 A cross-sectional view taken along line II-II'.

[0020] In the following text, reference will be made to Figures 1 to 5 Multilayer electronic components according to exemplary embodiments of this disclosure are described in detail. However, while a multilayer ceramic capacitor will be described as an example of a multilayer electronic component, the multilayer electronic component may also include inductors, piezoelectric elements, varistors, thermistors, etc.

[0021] A multilayer electronic component 100 according to an embodiment of the present disclosure may include: a body 110 including a capacitor forming portion Ac and cover portions 112 and 113, wherein the capacitor forming portion Ac includes a dielectric layer 111 and inner electrodes 121 and 122 alternately disposed with the dielectric layer 111 in a first direction, and the cover portions 112 and 113 are disposed on two surfaces of the capacitor forming portion Ac in the first direction; and outer electrodes 131 and 132 disposed on the body 110, wherein the cover portions 112 and 113 may include titanium (Ti), gallium (Ga) and magnesium (Mg), wherein when the molar number of gallium (Ga) in the cover portions 112 and 113 relative to 100 moles of titanium (Ti) is CG, and the molar number of magnesium (Mg) in the cover portions 112 and 113 relative to 100 moles of titanium (Ti) is CM, 0.2 ≤ CG / CM < 1.00 may be satisfied.

[0022] The body 110 may have alternating stacked dielectric layers 111 and internal electrodes 121 and 122.

[0023] More specifically, the main body 110 may include a capacitance forming portion Ac, which forms a capacitance by including first inner electrodes 121 and second inner electrodes 122 that are alternately disposed opposite to each other and interposing a dielectric layer 111 between the first inner electrodes 121 and the second inner electrodes 122.

[0024] The specific shape of the main body 110 is not particularly limited, and as Figure 1 shown, the main body 110 may have a hexahedral shape or a shape similar to a hexahedral shape. Since, in the process of sintering the main body 110, the ceramic powder included in the main body 110 shrinks, the main body 110 may not have a hexahedral shape with perfect straight lines. However, the main body 110 may generally have a hexahedral shape.

[0025] The main body 110 may have a first surface 1 and a second surface 2 that are opposite to each other in a first direction, a third surface 3 and a fourth surface 4 that are connected to the first surface 1 and the second surface 2 and are opposite to each other in a second direction, and a fifth surface 5 and a sixth surface 6 that are connected to the first surface 1, the second surface 2, the third surface 3, and the fourth surface 4 and are opposite to each other in a third direction.

[0026] The plurality of dielectric layers 111 forming the main body 110 may be in a sintered state, and adjacent dielectric layers 111 may be integrated with each other, such that it may be difficult to identify the boundary between them without using a scanning electron microscope (SEM).

[0027] The raw material for forming the dielectric layer 111 is not particularly limited as long as a sufficient electrostatic capacitance can be obtained using it. Generally, a perovskite (ABO3) - based material can be used. For example, a barium titanate - based material, a lead - composite perovskite - based material, a strontium titanate - based material, etc. can be used. The barium titanate - based material may include BaTiO3 - based ceramic powder, and examples of the BaTiO3 - based ceramic powder may include BaTiO3 and / or (Ba 1-x Ca x )TiO3 (0 < x < 1), Ba(Ti 1-y Ca y )O3 (0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O3 (0 < x < 1, 0 < y < 1), Ba(Ti 1-y Zr y )O3 (0 < y < 1), etc.

[0028] In addition, for the purposes of this disclosure, various ceramic additives, organic solvents, binders, dispersants, etc., can be added to powder particles such as barium titanate (BaTiO3) powder particles as raw materials for forming dielectric layer 111.

[0029] Furthermore, as an example of a more specific method for measuring the content of elements included in each component of the multilayer electronic assembly 100 in this disclosure, the composition can be analyzed using the energy-dispersive X-ray spectroscopy (EDS) mode of a scanning electron microscope (SEM), the EDS mode of a transmission electron microscope (TEM), or the EDS mode of a scanning transmission electron microscope (STEM). First, a thinned analytical sample is prepared in a region including the dielectric microstructure of a cross-section of the sintered body, a cross-section of the cover, or a cross-section of the side edge using a focused ion beam (FIB) device. A damaged layer on the surface of the thinned sample is removed using xenon (Xe) ion milling or argon (Ar) ion milling. Then, each component to be measured is scanned from the acquired images using SEM-EDS, TEM-EDS, or STEM-EDS for qualitative / quantitative analysis. In this case, the qualitative / quantitative analysis diagram of each component can be expressed by converting it into a weight percentage (wt%), atomic percentage (at%), or molar percentage (mol%) for each element. In this case, the qualitative / quantitative analysis plots for each component can be represented by converting the molar number of a particular component into the molar number relative to another particular component.

[0030] As another method, regions comprising dielectric microstructures can be selected by crushing the sheet, and then the composition of the selected regions comprising dielectric microstructures can be analyzed using devices such as inductively coupled plasma optical emission spectrometry (ICP-OES) or inductively coupled plasma mass spectrometry (ICP-MS). Other methods and / or other tools, as understood by those skilled in the art, may be used even if not described in this disclosure.

[0031] Furthermore, in order to distinguish the region in the capacitor forming portion Ac that includes the dielectric microstructure from the dielectric layers included in the cover portions 112 and 113 and the side edge portions 114 and 115, which will be described later, the dielectric layer included in the capacitor forming portion Ac may be defined as a first dielectric layer, the dielectric layer included in the cover portions 112 and 113 may be defined as a second dielectric layer, and the dielectric layer included in the side edge portions 114 and 115 may be defined as a third dielectric layer. Unless otherwise stated, the description of dielectric layer 111 may correspond to the description of the first dielectric layer.

[0032] Since the first dielectric layer, the second dielectric layer, and the third dielectric layer can be formed of a dielectric material such as barium titanate (BaTiO3), after firing, the first dielectric layer, the second dielectric layer, and the third dielectric layer can include dielectric microstructures. The dielectric microstructures can include a plurality of dielectric grains, grain boundaries disposed between adjacent dielectric grains, and n-centers disposed at points where three or more grain boundaries contact each other, and can include a plurality of dielectric grains, a plurality of grain boundaries, and a plurality of n-centers.

[0033] In addition, the dielectric layer 111 may include little gallium (Ga) or may not include gallium (Ga). When the number of moles of gallium (Ga) in the dielectric layer 111 relative to 100 moles of titanium (Ti) is DG, DG < CG may be satisfied. Additionally, when the number of moles of gallium (Ga) in the dielectric layer 111 relative to 100 moles of titanium (Ti) is DG, 0 mole ≤ DG < 0.1 mole may be satisfied. However, embodiments are not particularly limited thereto, and the number of moles of gallium (Ga) in the dielectric layer 111 relative to 100 moles of the main component may also be referred to as DG, and the number of moles of gallium (Ga) in the dielectric layer 111 relative to 100 moles of barium (Ba) may also be referred to as DG.

[0034] Here, the fact that the dielectric layer 111 of the capacitance forming portion Ac does not include gallium (Ga) may mean that the dielectric paste or the dielectric green sheet does not include gallium (Ga) before sintering the dielectric layer 111, or may mean that the dielectric layer 111 in the central region of the capacitance forming portion Ac does not include gallium (Ga).

[0035] That is, even if the gallium (Ga) included in the covering portions 112 and 113 described below undergoes a sintering process such as high-temperature heat treatment, the gallium (Ga) may not diffuse into the region of the dielectric layer 111 adjacent to the covering portions 112 and 113 in the capacitance forming portion Ac, which may mean that the dielectric layer 111 in the central region of the capacitance forming portion Ac does not include gallium (Ga).

[0036] For example, the fact that the dielectric layer 111 in the central region of the capacitance forming portion Ac does not include gallium (Ga) may mean that, based on a cross-section of the main body 110 in the first and second directions taken from the center of the main body 110 in the third direction, when observing a 10 μm × 10 μm region in the central portion of the main body 110 in the first and second directions in SEM-EDS, TEM-EDS, or STEM-EDS mode, gallium (Ga) is not detected, or the amount of gallium (Ga) detected is less than 0.1 at% relative to 100 at% of titanium (Ti).

[0037] The thickness td of the dielectric layer 111 does not need to be particularly limited.

[0038] To ensure the reliability of the multilayer electronic component 100 under high-voltage environments, the thickness td of the dielectric layer 111 can be less than or equal to 10.0 μm. Furthermore, to achieve miniaturization and high capacitance of the multilayer electronic component 100, the thickness td of the dielectric layer 111 can be less than or equal to 3.0 μm. To more easily achieve ultra-miniaturization and high capacitance, the thickness td of the dielectric layer 111 can be less than or equal to 1.0 μm, preferably less than or equal to 0.6 μm, and more preferably less than or equal to 0.4 μm.

[0039] In this case, the thickness td of dielectric layer 111 may represent the thickness td of at least one of the plurality of dielectric layers 111, or may represent the thickness td of each of all dielectric layers 111.

[0040] Here, the thickness td of the dielectric layer 111 can represent the thickness td of the dielectric layer 111 disposed between adjacent first inner electrode 121 and second inner electrode 122.

[0041] Furthermore, the thickness td of the dielectric layer 111 can represent the dimension of the dielectric layer 111 in the first direction.

[0042] In addition, the thickness td of dielectric layer 111 can represent the average thickness td of a single dielectric layer 111, or it can represent the average thickness td of multiple dielectric layers 111.

[0043] The average size of the dielectric layer 111 in the first direction can be measured by scanning an image of the body 110 in both the first and second directions using a scanning electron microscope (SEM) at a magnification of 10,000x. More specifically, the average size of a single dielectric layer 111 in the first direction can be represented as the average value calculated by measuring the size of a single dielectric layer 111 in the first direction at 10 equally spaced points in the second direction of the scanned image. These 10 equally spaced points can be specified in the capacitor forming section Ac. Furthermore, extending the measurement of the average value to 10 dielectric layers 111 makes the average size of the dielectric layer 111 in the first direction more generalized.

[0044] The internal electrodes 121 and 122 may be stacked alternately with the dielectric layer 111.

[0045] The inner electrodes 121 and 122 may include a first inner electrode 121 and a second inner electrode 122, and the first inner electrode 121 and the second inner electrode 122 may be alternately arranged opposite each other, and a dielectric layer 111 is located between the first inner electrode 121 and the second inner electrode 122, and the first inner electrode 121 and the second inner electrode 122 may be exposed on the third surface 3 and the fourth surface 4 of the body 110, respectively.

[0046] More specifically, the first inner electrode 121 is spaced apart from the fourth surface 4 and can be exposed through the third surface 3, and the second inner electrode 122 is spaced apart from the third surface 3 and can be exposed through the fourth surface 4. The first outer electrode 131 can be disposed on the third surface 3 of the body 110 to connect to the first inner electrode 121, and the second outer electrode 132 can be disposed on the fourth surface 4 of the body 110 to connect to the second inner electrode 122.

[0047] That is, the first inner electrode 121 is not connected to the second outer electrode 132, but is connected to the first outer electrode 131, and the second inner electrode 122 is not connected to the first outer electrode 131, but is connected to the second outer electrode 132. In this case, the first inner electrode 121 and the second inner electrode 122 can be electrically separated from each other by the dielectric layer 111 between them.

[0048] In addition, the body 110 can be formed by alternately stacking a first ceramic green sheet on which a conductive paste for forming a first internal electrode 121 is printed and a second ceramic green sheet on which a conductive paste for forming a second internal electrode 122 is printed, and then sintering the stacked ceramic green sheets.

[0049] There are no particular limitations on the materials used to form the internal electrodes 121 and 122, and materials with excellent electrical conductivity can be used. For example, the internal electrodes 121 and 122 may include at least one of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0050] Alternatively, the internal electrodes 121 and 122 can be formed by printing a conductive paste for forming the internal electrodes onto a ceramic green sheet. The conductive paste for forming the internal electrodes includes at least one of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof. Screen printing, gravure printing, and other methods can be used as printing methods for the conductive paste for forming the internal electrodes, but the embodiments of this disclosure are not limited thereto.

[0051] Furthermore, there are no particular restrictions on the thickness te of the inner electrodes 121 and 122.

[0052] To ensure the reliability of the multilayer electronic component 100 under high-voltage environments, the thickness te of the inner electrode can be less than or equal to 3.0 μm. Furthermore, to achieve miniaturization and high capacitance in the multilayer electronic component 100, the thickness te of the inner electrode can be less than or equal to 1.0 μm. To more easily achieve miniaturization and high capacitance, the thickness te of the inner electrode can be less than or equal to 0.6 μm, and more preferably, less than or equal to 0.4 μm.

[0053] In this case, the thickness te of the inner electrode can represent the thickness te of at least one of the multiple inner electrodes, or it can represent the thickness te of each of all the inner electrodes.

[0054] Here, the thickness te of the inner electrodes 121 and 122 can represent the dimensions of the inner electrodes 121 and 122 in the first direction.

[0055] In addition, the thickness te of the inner electrode can represent the average thickness te of a single inner electrode, or the average thickness te of multiple inner electrodes.

[0056] The average dimensions of the inner electrodes 121 and 122 in the first direction can be measured by scanning images of the body 110 in both the first and second directions using a scanning electron microscope (SEM) at 10,000x magnification. More specifically, the average dimension of one inner electrode in the first direction can be represented as the average value calculated by measuring the dimension of one inner electrode in the first direction at 10 equally spaced points in the second direction of the scanned image. These 10 equally spaced points can be specified in the capacitor forming section Ac. Furthermore, extending the measurement of the average value to 10 inner electrodes makes the average dimensions of multiple inner electrodes in the first direction more generalized.

[0057] Furthermore, in embodiments of this disclosure, the thickness td of at least one of the plurality of dielectric layers 111 and the thickness te of at least one of the plurality of internal electrodes 121 and 122 can satisfy 2×te. <td。

[0058] In other words, the thickness td of a dielectric layer 111 can be more than twice the thickness te of an inner electrode 121 or 122. Preferably, the average thickness td of the plurality of dielectric layers 111 can be more than twice the average thickness te of the plurality of inner electrodes 121 and 122.

[0059] Typically, multilayer electronic components are prone to breakdown under high voltage conditions, so the main problem with multilayer electronic components used in high voltage environments is reliability.

[0060] Therefore, in order to prevent the multilayer electronic components from being broken down under high voltage conditions, the average thickness td of the dielectric layer 111 can be made more than twice the average thickness te of the inner electrodes 121 and 122, thereby increasing the thickness of the dielectric layer (which is the distance between the inner electrodes) and improving the breakdown voltage characteristics.

[0061] When the average thickness td of dielectric layer 111 is less than or equal to twice the average thickness te of inner electrodes 121 and 122, the average thickness of dielectric layer (which is the average distance between inner electrodes) is relatively small, resulting in a decrease in breakdown voltage and a short circuit between inner electrodes.

[0062] In addition, the main body 110 may include cover portions 112 and 113 disposed on two surfaces of the capacitor forming portion Ac in the first direction.

[0063] Specifically, the covers 112 and 113 may include a first cover 112 disposed on one surface of the capacitor forming portion Ac in the first direction and a second cover 113 disposed on another surface of the capacitor forming portion Ac in the first direction. More specifically, for example, the covers 112 and 113 may include an upper cover 112 (i.e., the first cover 112) disposed above the capacitor forming portion Ac and a lower cover 113 (i.e., the second cover 113) disposed below the capacitor forming portion Ac.

[0064] Unless otherwise specifically described in this disclosure, the description of covers 112 and 113 may refer to a description of the first cover 112 or a description of the second cover 113, and may also refer to a description of each of the first cover 112 and the second cover 113.

[0065] The first cover portion 112 and the second cover portion 113 can be formed by providing or stacking a single second dielectric layer or two or more second dielectric layers on the upper and lower surfaces of the capacitor forming portion Ac in the first direction, respectively, and can mainly serve to prevent damage to the inner electrodes 121 and 122 due to physical stress and / or chemical stress.

[0066] The first cover portion 112 and the second cover portion 113 do not include the inner electrodes 121 and 122, and may include the same dielectric material as the dielectric material of the first dielectric layer 111 of the capacitor forming portion Ac. That is, the first cover portion 112 and the second cover portion 113 may include ceramic materials, for example, barium titanate (BaTiO3) based ceramic materials.

[0067] Furthermore, the thickness tc of the covers 112 and 113 does not need to be particularly limited, and in the following text, the thickness tc of the covers 112 and 113 may refer to the thickness tc of each of the first cover 112 and the second cover 113.

[0068] However, in order to more easily achieve miniaturization and high capacitance of multilayer electronic components, the thickness tc of the cover can be less than or equal to 100 μm or less than or equal to 50 μm, preferably less than or equal to 30 μm, and more preferably, in the case of ultra-small products, the thickness tc of the cover is less than or equal to 20 μm.

[0069] Here, the thickness tc of the covers 112 and 113 can represent the dimensions of the covers 112 and 113 in the first direction.

[0070] In addition, the thickness tc of the covering portions 112 and 113 can represent the average thickness tc of each of the first covering portion 112 and the second covering portion 113, and can represent the average size of the first covering portion 112 and the second covering portion 113 in the first direction.

[0071] The average dimensions of the covers 112 and 113 in the first direction can be measured by scanning images of the body 110 in the first and second directions using a scanning electron microscope (SEM) at 10,000x magnification. More specifically, the average dimension of a cover in the first direction can be expressed as the average value calculated by measuring the dimension of a cover in the first direction at 10 equally spaced points in the second direction of the scanned image.

[0072] Furthermore, the average dimensions of the covering portions 112 and 113 measured by the above method in the first direction are substantially the same as the average dimensions of the covering portions 112 and 113 in the first direction measured in the cross sections of the main body 110 in the first and third directions.

[0073] In addition, the covers 112 and 113 may include titanium (Ti), gallium (Ga) and magnesium (Mg), and may also include barium (Ba).

[0074] In other words, the covering portions 112 and 113 may have a composition different from that of the dielectric layer 111 of the capacitor forming portion Ac.

[0075] Gallium (Ga) is a low-temperature sintering agent. Ga can ensure the density of the dielectric microstructure before the growth of dielectric grains, thereby suppressing the formation of porosity before grain growth, preventing the reduction in breakdown voltage (BDV) of multilayer electronic components caused by electric field concentration, and blocking moisture penetration paths, thus improving the reliability of multilayer electronic components. Here, breakdown voltage (BDV) characterizes the breakdown voltage properties.

[0076] In this case, when the molar number of gallium (Ga) in the covering portions 112 and 113 relative to 100 moles of titanium (Ti) is CG, and the molar number of magnesium (Mg) in the covering portions 112 and 113 relative to 100 moles of titanium (Ti) is CM, 0.2 ≤ CG / CM < 1.0 can be satisfied. However, the embodiments are not particularly limited to this, and the molar number of gallium (Ga) in the covering portions 112 and 113 relative to 100 moles of the main component can be referred to as CG, or the molar number of gallium (Ga) in the covering portions 112 and 113 relative to 100 moles of barium (Ba) can be referred to as CG. The molar number of magnesium (Mg) in the covering portions 112 and 113 relative to 100 moles of the main component can be referred to as CM, or the molar number of magnesium (Mg) in the covering portions 112 and 113 relative to 100 moles of barium (Ba) can be referred to as CM.

[0077] When the covering parts 112 and 113 satisfy 0.2 ≤ CG / CM < 1.0, the number of pores (ea) and the porosity (%) of the covering parts 112 and 113 can be reduced, thereby improving the moisture-proof reliability and enhancing the breakdown voltage (BDV) characteristics.

[0078] When the covering parts 112 and 113 satisfy CG / CM < 0.2 or 1.0 ≤ CG / CM, the following problems exist: Since the pores are not sufficiently removed, the moisture-proof reliability may be reduced, and the breakdown voltage (BDV) characteristics may not be excellent.

[0079] In addition, the method for measuring the number of pores (ea) or the porosity (%) in the present disclosure is not particularly limited, but the number of pores (ea) can be measured by the following method: imaging the cross-section of the area to be measured using a scanning electron microscope (SEM), a transmission electron microscope (TEM), a scanning transmission electron microscope (STEM), etc., and then counting the number of pores based on the captured image using a program that can observe the pores, and the porosity (%) can be obtained by calculating the percentage of the area of the pores relative to the area of the captured image.

[0080] In this case, the covering parts 112 and 113 may satisfy 0.3 mol ≤ CG ≤ 1.0 mol.

[0081] When the covering parts 112 and 113 satisfy 0.3 mol ≤ CG ≤ 1.0 mol, the sintering temperature can be reduced to further reduce the number of pores and decrease the porosity, thereby further improving the moisture-proof reliability and further enhancing the breakdown voltage (BDV) characteristics.

[0082] When the covering parts 112 and 113 satisfy CG < 0.3 mol, it is not easy to control the grain growth of the dielectric grains, so the pores may not be sufficiently removed, which may lead to a reduction in the moisture-proof reliability and poor breakdown voltage (BDV) characteristics.

[0083] When the covering parts 112 and 113 satisfy 1.0 mol < CG, due to the excessive addition of gallium (Ga), the dispersibility may be reduced, which may lead to the formation of aggregates. As a result, it may not be possible to ensure sufficient sintering density or the sintering of the covering parts may not be possible, and the following problems exist: Since the pores may not be sufficiently removed, the moisture-proof reliability may be reduced, and the breakdown voltage (BDV) characteristics may not be excellent.

[0084] Figure 9A is an image of the cross-section of the covering part before sintering in the comparative example taken using a transmission electron microscope (TEM), and Figure 9BIt is an image of a cross-section of the cover portion before sintering of an example taken using a transmission electron microscope (TEM). More specifically, Figure 9A the cover portion in Figure 9B satisfies 1.0 mol < CG, and Figure 9A the cover portion in

[0085] satisfies 0.3 mol ≤ CG ≤ 1.0 mol. As

[0086] shown in

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[0089] Figure 10A Figure 10B Figure 10A aggregates (as shown in the dotted circle) are formed due to the addition of an excessive amount of gallium (Ga) to the cover portion. Figure 10B It is an image of a cross-section of the cover portion and the capacitor formation portion of a comparative example taken using a transmission electron microscope (TEM), and Figure 10A the cover portion in satisfies 2.0 mol < CM, and

[0090] the cover portion in

[0091] satisfies 1.0 mol ≤ CM ≤ 2.0 mol. As

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[0159] <I Figure 7A Figure 7B Figure 8A Figure 8B

[0160]

[0161]

[0162] Figure 11A Figure 11B

[0163]

[0164]

[0165]

[0166] <

[0091] In this case, the average size of the plurality of dielectric grains included in the cover portions 112 and 113 may be greater than or equal to 150 nm and less than or equal to 250 nm.

[0092] According to embodiments of this disclosure, the size of each of the plurality of dielectric grains included in the cover portions 112 and 113, and the average size of the plurality of dielectric grains, can be measured in the following manner. First, a 5μm × 5μm region of the cross-section of the cover portions 112 and 113 is imaged using SEM, TEM, or STEM, and the plurality of dielectric grains observed in the captured image are distinguished using an image processing program (e.g., “Image Pro Plus” or “Image J”). Thereafter, the size of each of the distinguished dielectric grains can be obtained using the image processing program, and the average size of the plurality of dielectric grains can also be obtained using the image processing program. Here, the size of the dielectric grain may represent the average of the major axis (i.e., the major axis dimension) and minor axis (i.e., the minor axis dimension) passing through the center of the dielectric grain, and the average size of the plurality of dielectric grains may represent the average of the sizes of the dielectric grains obtained by the above method, but is not particularly limited thereto. Other methods and / or other tools understood by those skilled in the art may be used even if not described in this disclosure.

[0093] When the average size of the plurality of dielectric grains included in the cover portions 112 and 113 is greater than or equal to 150 nm and less than or equal to 250 nm, the dielectric microstructure can be densified, thereby reducing the number of pores and improving mechanical properties, thus improving impact resistance.

[0094] In this case, the size deviation of the plurality of dielectric grains included in the cover portions 112 and 113 may be less than or equal to 80 nm, more preferably less than or equal to 70 nm.

[0095] There is no particular limitation on the lower limit of the size deviation of the plurality of dielectric grains included in the cover portions 112 and 113, and the smaller the size deviation, the better.

[0096] Here, the size deviation can represent the difference (absolute value) between the average size of multiple dielectric grains and the size of a single dielectric grain, and the size deviation of each dielectric grain can be less than or equal to 80 nm.

[0097] When the size deviation of the plurality of dielectric grains included in the cover portions 112 and 113 is less than or equal to 80 nm, the dielectric microstructure can be densified to reduce the number of pores and electric field concentration can be prevented to improve breakdown voltage (BDV) characteristics.

[0098] Figure 12AThese are images of the cross-section of the cover portion of the comparative example, taken using a transmission electron microscope (TEM), and images of the dielectric grains observed and differentiated by a program. Figure 12B These are images of a cross-section of the cover portion of an example, taken using a transmission electron microscope (TEM), and of the observed dielectric grains distinguished by a procedure. Figure 12A In the comparative example, the average size of the observed dielectric grains was 154 nm with a size deviation of less than or equal to 114 nm, and the breakdown voltage characteristics were not excellent. On the other hand, in Figure 12B In the example, the average size of the observed dielectric grains was 203 nm and the size deviation was less than or equal to 70 nm.

[0099] Furthermore, at least one of the grain boundaries and n-centers of the covering portions 112 and 113 may include a second phase, which includes at least one of gallium (Ga), magnesium (Mg) and titanium (Ti).

[0100] More specifically, the grain boundaries of the covering portions 112 and 113 may include a first second phase, the first second phase including at least one of gallium (Ga), magnesium (Mg) and titanium (Ti), and / or the n-center of the covering portions 112 and 113 may include a second second phase, the second second phase including at least one of gallium (Ga), magnesium (Mg) and titanium (Ti).

[0101] In this disclosure, "second phase" may refer to a particle or segregation having a composition or lattice different from that of a perovskite (ABO3) based dielectric material.

[0102] More specifically, the atomic percentage (at%) of gallium (Ga) in the second phase relative to 100 at% of titanium (Ti) can be greater than or equal to 2 at% and less than or equal to 5 at%.

[0103] When the atomic percentage (at%) of gallium (Ga) in the second phase relative to 100 at% of titanium (Ti) is greater than or equal to 2 at% and less than or equal to 5 at%, the number of pores in the covering portions 112 and 113 can be further reduced and the porosity can be decreased, thereby further improving the moisture resistance reliability and further improving the breakdown voltage (BDV) characteristics.

[0104] When the atomic percentage (at%) of gallium (Ga) in the second phase relative to 100 at% of titanium (Ti) is less than 2 at%, it is not easy to control the grain growth of dielectric grains, and therefore it may not be possible to adequately remove porosity, which may lead to reduced moisture resistance reliability and poor breakdown voltage (BDV) characteristics.

[0105] When the atomic percentage (at%) of gallium (Ga) in the second phase exceeds 5 at% relative to 100 at% of titanium (Ti), the dispersibility may decrease due to the addition of excess gallium (Ga), which may lead to the formation of agglomerates. As a result, sufficient sintering density may not be ensured, or the capping may not be sintered, and porosity may not be adequately removed, which may lead to reduced moisture resistance reliability and poor breakdown voltage (BDV) characteristics.

[0106] The atomic percentage (at%) of magnesium (Mg) in the second phase relative to 100 at% of titanium (Ti) can be greater than or equal to 5 at% and less than or equal to 15 at%.

[0107] When the atomic percentage (at%) of magnesium (Mg) in the second phase relative to 100 at% of titanium (Ti) is greater than or equal to 5 at% and less than or equal to 15 at%, the number of pores in the covering portions 112 and 113 can be further reduced and the porosity can be decreased, thereby further improving the moisture-proof reliability and further improving the breakdown voltage (BDV) characteristics.

[0108] When the atomic percentage (at%) of magnesium (Mg) in the second phase relative to 100 at% of titanium (Ti) is less than 5 at%, the following problems exist: moisture resistance reliability may be reduced due to the inability to adequately remove porosity, and breakdown voltage (BDV) characteristics may be suboptimal.

[0109] When the atomic percentage (at%) of magnesium (Mg) in the second phase exceeds 15 at% relative to 100 at% titanium (Ti), the dispersibility may decrease due to the excessive addition of magnesium (Mg), which may lead to the formation of agglomerates. Since the porosity cannot be adequately removed, moisture resistance reliability may decrease, and the breakdown voltage (BDV) characteristics may be suboptimal. Furthermore, the internal electrodes 121 and 122 of the capacitor forming section Ac adjacent to the cover may be oxidized, thereby degrading the electrical properties or reducing the breakdown voltage (BDV).

[0110] Figure 6A It is an image of a cross-section of the covering portion, taken using a transmission electron microscope (TEM). Figure 6B These are images of the same cross-section of the coating obtained by area scanning (mapping) magnesium (Mg) in TEM-EDS mode, and Figure 6C This is an image of the same cross-section of the cover obtained by surface scanning of gallium (Ga) in TEM-EDS mode.

[0111] exist Figure 6A As can be seen, the second phase is located at grain boundaries and n-centers, rather than within the dielectric grains, and more specifically, in Figure 6BAs can be seen, magnesium (Mg) was detected in the second phase, and... Figure 6C As can be seen, gallium (Ga) was detected in the second phase. As a result of TEM-EDS point analysis of the second phase, 10.3 at% magnesium (Mg) and 3.4 at% gallium (Ga) were detected relative to 100 at% titanium (Ti).

[0112] In addition, such as Figure 4 As shown, the multilayer electronic assembly 100 may include side edge regions 114' and 115', which are portions disposed at the two ends of the inner electrodes 121 and 122 in the third direction. The side edge regions 114' and 115' may be disposed on two side surfaces of the capacitor forming portion Ac in the third direction, and the cover portions 112 and 113 may be disposed on the upper and lower surfaces of the capacitor forming portion Ac and the side edge regions 114' and 115'.

[0113] More specifically, the side edge regions 114' and 115' may include a first side edge region 114' disposed between the inner electrodes 121 and 122 and the fifth surface 5, and a second side edge region 115' disposed between the inner electrodes 121 and 122 and the sixth surface 6.

[0114] like Figure 4 As shown, the side edge regions 114' and 115' can refer to the area between the two ends of the first inner electrode 121 and the second inner electrode 122 in the third direction and the outer surface of the body 110, based on the cross-section of the body 110 cut along the first direction and the third direction.

[0115] Side edge regions 114' and 115' can be formed by applying conductive paste to the ceramic green sheet to form the inner electrodes 121 and 122, except for the portion of the ceramic green sheet where the side edge regions 114' and 115' will be formed.

[0116] The side edge regions 114' and 115' primarily serve to prevent damage to the inner electrodes 121 and 122 due to physical and / or chemical stress.

[0117] The first side edge region 114' and the second side edge region 115' do not include the inner electrodes 121 and 122, and may include the same material as the first dielectric layer 111. For example, the first side edge region 114' and the second side edge region 115' may be formed by a portion of the first dielectric layer 111. That is, the first side edge region 114' and the second side edge region 115' may include ceramic materials, for example, barium titanate (BaTiO3) based ceramic materials.

[0118] In addition, such as Figure 5As shown, the multilayer electronic assembly 100 may include side edge portions 114 and 115 disposed on the third-side upward side surfaces of the capacitor forming portion Ac and the covering portions 112 and 113.

[0119] More specifically, the side edge portions 114 and 115 may include a first side edge portion 114 disposed on one side surface of the capacitor forming portion Ac and the cover portions 112 and 113 in the third direction, and a second side edge portion 115 disposed on the other side surface of the capacitor forming portion Ac and the cover portions 112 and 113 in the third direction.

[0120] A portion of the side edges 114 and 115 can be formed by applying conductive paste to the ceramic green sheet to form the inner electrodes 121 and 122, applying conductive paste to the portion of the ceramic green sheet other than the portion where the side edges 114 and 115 will be formed. To suppress step differences caused by the inner electrodes 121 and 122, the side edges 114 and 115 can be formed by stacking ceramic green sheets coated with conductive paste to form a first stack, then stacking a single second ceramic green sheet or two or more second ceramic green sheets for the second dielectric layer on the upper and lower surfaces of the first stack to form a second stack, cutting the second stack such that the inner electrodes 121 and 122 are exposed to the two side surfaces of the capacitor forming portion Ac that are opposite each other in the third direction and a cover portion is formed on the capacitor forming portion Ac, and then stacking or forming a single third dielectric layer or two or more third dielectric layers along the third direction on the side surfaces of the capacitor forming portion Ac and the cover portion.

[0121] The side edges 114 and 115 primarily serve to prevent damage to the inner electrodes 121 and 122 due to physical and / or chemical stress.

[0122] The first side edge portion 114 and the second side edge portion 115 do not include the inner electrodes 121 and 122, and may include the same dielectric material as the dielectric material of the dielectric layer 111. That is, the first side edge portion 114 and the second side edge portion 115 may include ceramic materials, for example, barium titanate (BaTiO3) based ceramic materials.

[0123] Furthermore, the width wm of the side edge portions 114 and 115 does not need to be particularly limited, and in the following text, the width wm of the side edge portions 114 and 115 may refer to the width wm of each of the first side edge portion 114 and the second side edge portion 115.

[0124] However, in order to more easily achieve miniaturization and high capacitance of the multilayer electronic component 100, the width wm of the side edge portions 114 and 115 can be less than or equal to 50 μm, preferably less than or equal to 30 μm, and more preferably, in the case of ultra-small products, the width wm of the side edge portions 114 and 115 can be less than or equal to 20 μm.

[0125] Here, the width wm of the side edges 114 and 115 can represent the dimension of the side edges 114 and 115 in the third direction.

[0126] In addition, the width wm of the side edge portions 114 and 115 can represent the average width wm of each of the first side edge portion 114 and the second side edge portion 115, and can also represent the average width wm of the first side edge portion 114 and the second side edge portion 115.

[0127] The average dimensions of the side edges 114 and 115 in the third direction can be measured by scanning an image of the body 110 in both the first and third directions using a scanning electron microscope (SEM) at 10,000x magnification. More specifically, the average dimensions of the side edges 114 and 115 in the third direction can be calculated as the average value of the dimensions of one side edge 114 or 115 in the third direction measured at 10 equally spaced points in the first direction of the scanned image. Additionally, Figure 4 The description of the width wm of the side edge regions 114' and 115' in the text can be compared with... Figure 5 The descriptions of the width wm of the side edge portions 114 and 115 are basically the same, therefore, their repeated descriptions are omitted.

[0128] In embodiments of this disclosure, a multilayer electronic component 100 is shown to have a structure with two external electrodes 131 and 132, but the number, shape, etc. of the external electrodes 131 and 132 may be changed according to the shape of the internal electrodes or for other purposes.

[0129] External electrodes 131 and 132 may be disposed on the main body 110 and may be connected to internal electrodes 121 and 122.

[0130] More specifically, the external electrodes 131 and 132 may include a first external electrode 131 and a second external electrode 132 respectively disposed on the third surface 3 and the fourth surface 4 of the body 110 and respectively connected to the first internal electrode 121 and the second internal electrode 122. That is, the first external electrode 131 may be disposed on the third surface 3 of the body 110 and connected to the first internal electrode 121, and the second external electrode 132 may be disposed on the fourth surface 4 of the body 110 and connected to the second internal electrode 122.

[0131] Additionally, the external electrodes 131 and 132 may be configured to extend onto a portion of the first surface 1 and / or a portion of the second surface 2 of the body 110, and / or may be configured to extend onto a portion of the fifth surface 5 and / or a portion of the sixth surface 6 of the body 110. That is, the first external electrode 131 may be disposed on the third surface 3 of the body 110 and on a portion of at least one of the first surface 1, the second surface 2, the fifth surface 5, and the sixth surface 6 of the body 110, and the second external electrode 132 may be disposed on the fourth surface 4 of the body 110 and on a portion of at least one of the first surface 1, the second surface 2, the fifth surface 5, and the sixth surface 6 of the body 110.

[0132] The external electrodes 131 and 132 can be formed using any material (such as metal), as long as the material is conductive. The specific material can be determined by taking into account electrical properties, structural stability, etc., and the external electrodes 131 and 132 can also have a multilayer structure.

[0133] For example, external electrodes 131 and 132 may include an electrode layer disposed on the body 110 and a plating layer disposed on the electrode layer. In this case, the electrode layer may include a first electrode layer disposed on the body and a second electrode layer disposed on the first electrode layer, and the plating layer may include a first plating layer disposed on the electrode layer and a second plating layer disposed on the first plating layer, but embodiments thereof are not particularly limited thereto. The electrode layer and plating layer will be described in more detail below.

[0134] Electrode layers 131a, 132a, 131b, and 132b can be formed by transferring a sheet comprising conductive metal onto the body 110. Alternatively, electrode layers 131a, 132a, 131b, and 132b can be formed by coating the body 110 with a conductive paste comprising conductive metal for forming an external electrode and then sintering it, or electrode layers 131a, 132a, 131b, and 132b can be formed by immersing the body 110 in a conductive paste comprising conductive metal for forming an external electrode and then drying it, but embodiments are not particularly limited thereto.

[0135] As a more specific example of electrode layers 131a, 132a, 131b and 132b, electrode layers 131a, 132a, 131b and 132b may have a double-layer structure including first electrode layers 131a and 132a and second electrode layers 131b and 132b.

[0136] More specifically, the external electrodes 131 and 132 may respectively include first electrode layers 131a and 132a and second electrode layers 131b and 132b. The first electrode layers 131a and 132a include a first conductive metal and glass, and the second electrode layers 131b and 132b are respectively disposed on the first electrode layers 131a and 132a and include a second conductive metal and resin.

[0137] Materials with excellent conductivity can be used as conductive metals included in electrode layers 131a, 132a, 131b and 132b. For example, the conductive metals included in electrode layers 131a, 132a, 131b and 132b may include at least one selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti) and alloys thereof, but embodiments thereof are not particularly limited thereto.

[0138] Here, the conductive metal included in the first electrode layers 131a and 132a may be referred to as the first conductive metal, and the conductive metal included in the second electrode layers 131b and 132b may be referred to as the second conductive metal. In this case, the first conductive metal and the second conductive metal may be the same as each other or different from each other, and when multiple conductive metals are included, only a portion of the first conductive metal and a portion of the second conductive metal may include the same conductive metal, but this is not particularly limited thereto.

[0139] The glass included in the first electrode layers 131a and 132a can be used to improve the bonding properties between the first electrode layers 131a and 132a and the body 110, and the resin included in the second electrode layers 131b and 132b can improve the flexural strength.

[0140] The first conductive metal included in the first electrode layers 131a and 132a can be used to electrically connect to the inner electrodes 121 and 122.

[0141] The first conductive metal included in the first electrode layers 131a and 132a is not particularly limited, as long as it is a material that can be electrically connected to the inner electrodes 121 and 122. For example, it may include at least one of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti) and alloys thereof.

[0142] The second conductive metal included in the second electrode layers 131b and 132b can be used to electrically connect to the first electrode layers 131a and 132a.

[0143] The second conductive metal included in the second electrode layers 131b and 132b is not particularly limited, as long as it is a material that can be electrically connected to the first electrode layers 131a and 132a, and may include at least one of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti) and alloys thereof.

[0144] The second conductive metal included in the second electrode layers 131b and 132b may include at least one of spherical particles and flake-shaped particles. That is, the second conductive metal may consist only of flake-shaped particles, or only of spherical particles, or a mixture of flake-shaped and spherical particles. Here, spherical particles may also include shapes other than perfect spheres, for example, shapes with a length ratio (major axis to minor axis) of less than or equal to 1.45. Flake-shaped refers to a flat and elongated shape, and is not particularly limited, for example, shapes with a length ratio (major axis to minor axis) of greater than or equal to 1.95. The lengths of the major and minor axes of the spherical particles and flake-shaped particles can be measured from images obtained by scanning a cross-section of the multilayer electronic assembly cut from the central portion in a third direction using a scanning electron microscope (SEM) in the first and second directions.

[0145] The resin included in the second electrode layers 131b and 132b can ensure bonding properties and play a damping role, and there are no particular limitations, as long as it can be mixed with particles of the second conductive metal (or referred to as second conductive metal particles) to form a paste, for example, it can include epoxy resin.

[0146] In addition, the second electrode layers 131b and 132b may also include intermetallic compounds.

[0147] The second electrode layers 131b and 132b may include an intermetallic compound, thereby further improving electrical connectivity with the first electrode layers 131a and 132a. The intermetallic compound can improve electrical connectivity by connecting multiple second conductive metal particles, and can also surround and connect the multiple second conductive metal particles to each other.

[0148] In this case, the intermetallic compound may include a metal with a melting point lower than the curing temperature of the resin. That is, since the intermetallic compound includes a metal with a melting point lower than the curing temperature of the resin, the metal with a melting point lower than the curing temperature of the resin melts during the drying and curing process, forming an intermetallic compound with a portion of the metal particles and surrounding the metal particles. In this case, the intermetallic compound may preferably include a low-melting-point metal with a melting point of 300°C or lower.

[0149] For example, intermetallic compounds may include Sn with a melting point of 213°C to 220°C. During the drying and curing process, Sn melts, and the molten Sn wets high-melting-point metal particles such as Ag, Ni, or Cu through capillary action, and reacts with a portion of the high-melting-point metal particles such as Ag, Ni, or Cu to form intermetallic compounds such as Ag3Sn, Ni3Sn4, Cu6Sn5, Cu3Sn, etc. Unreacted Ag, Ni, or Cu are retained in the form of metal particles.

[0150] Therefore, the second conductive metal particle may include one or more of Ag, Ni and Cu, and the intermetallic compound may include one or more of Ag3Sn, Ni3Sn4, Cu6Sn5 and Cu3Sn.

[0151] Coatings 131c and 132c can be used to improve mounting characteristics.

[0152] There are no particular restrictions on the type of plating 131c and 132c. For example, plating 131c and 132c may include at least one of nickel (Ni), tin (Sn), silver (Ag), palladium (Pd) and alloys thereof.

[0153] The coatings 131c and 132c can be formed as a single layer or as multiple layers.

[0154] More specifically, for example, plating layers 131c and 132c can be nickel (Ni) plating layers or tin (Sn) plating layers, or they can be in the form where nickel (Ni) plating layers and tin (Sn) plating layers are sequentially formed on the electrode layer, or they can be in the form where tin (Sn) plating layers, nickel (Ni) plating layers, and tin (Sn) plating layers are sequentially formed on the electrode layer. Additionally, plating layers 131c and 132c can include multiple nickel (Ni) plating layers and / or multiple tin (Sn) plating layers.

[0155] The size of the multilayer electronic component 100 does not require special restrictions.

[0156] However, to achieve both miniaturization and high capacitance, the thickness of the dielectric layer and the internal electrode needs to be reduced to increase the number of stacks. Therefore, the effects of this disclosure become more significant in multilayer electronic components 100 with dimensions of 3216 (length × width: 3.2 mm × 1.6 mm, and the length and width satisfy the error within ±5%) or smaller.

[0157] The present disclosure will be described in more detail below with reference to examples, but these are intended to help in a concrete understanding of the disclosure, and the scope of the disclosure is not limited by the examples.

[0158] (Test example) Comparative Example 1 and Example 1 were used to test the number of pores and porosity of the cover portion. The sheet of Comparative Example 1 was manufactured using a cover portion that satisfies CG / CM<0.2, and the sheet of Example 1 was manufactured in the same manner as that of Comparative Example 1, except that the cover portion satisfies 0.2≤CG / CM<1.0.

[0159] More specifically, Figure 7A The images are of the pores observed in the cross-section of the cover portion of Comparative Example 1, and Figure 7B This is an image of the pores observed in a cross-section of the cover portion of Example 1. Figure 8A This shows the number of pores per unit area (ea / 547μm) observed in the cross-section of the cover portion of Comparative Example 1 and Example 1. 2 The diagram, and Figure 8B This is a graph showing the porosity (%) observed in the cross-section of the cover portion of Comparative Example 1 and Example 1. Here, the value is 547 μm. 2 This refers to the magnified cross-sectional area of ​​the pores that can be observed when using observation devices (e.g., SEM, TEM, etc.) to observe the cross-section of the covering. (Used to set 547μm) 2 There are no particular restrictions on the cross-sectional area method; for example, the unit area can be set to approximately 25.50 μm wide and 21.45 μm high for observation.

[0160] In Comparative Example 1, the number of pores per unit area (ea / 547μm) 2 The number of pores per unit area is approximately 500, while in Example 1, the number of pores per unit area is (ea / 547μm). 2 The porosity (%) is approximately 100, and in Comparative Example 1, the porosity (%) is approximately 0.8%, while in Example 1, the porosity (%) is approximately 0.15%. Therefore, it can be confirmed that when the covering portion satisfies 0.2≤CG / CM<1.00, the number of pores can be reduced and the porosity can be decreased, and it is predictable that the moisture-proof reliability can be improved.

[0161] Comparative Example 2 and Example 2 were used to test the moisture-proof reliability of the cover. The sheet of Comparative Example 2 was manufactured using a cover that satisfies CG / CM<0.2, and the sheet of Example 2 was manufactured in the same manner as that of Comparative Example 2, except that the cover satisfies 0.2≤CG / CM<1.00.

[0162] Figure 11A This is the moisture-proof reliability evaluation curve for Comparative Example 2, and... Figure 11B This is the moisture-proof reliability evaluation curve for Example 2.

[0163] For each of Comparative Example 2 and Example 2, the moisture-proof reliability was evaluated as follows: 20 channels were manufactured, and 20 sheets were mounted on each of the 20 channels. A voltage of 6.3V was applied to each of the 20 channels (sheets) for 8 hours in an environment with a temperature of 85°C and a relative humidity of 85%. Under these conditions, the resistance of the channel (sheet) decreased to 10 Ω·cm. 5 Ω and below are considered defective.

[0164] In Comparative Example 2, a defect occurred in at least one channel (piece), but in Example 2, no defects occurred in any of the channels (pieces). Therefore, it can be seen that when the covering portion satisfies 0.2 ≤ CG / CM < 1.00, the moisture-proof reliability is improved.

[0165] Table 1 below describes the number of pores per unit area (ea / 547μm) of Comparative Examples 3 to 6 and Examples 3 to 6 fabricated using different CG / CM coverings. 2 The following parameters were considered: porosity (%), whether agglomerates formed, breakdown voltage (BDV), and moisture resistance reliability. Comparative Examples 3 to 6 and Examples 3 to 6 were manufactured in the same manner, except for the difference in CG / CM of the cover portion.

[0166] More specifically, Comparative Example 3 satisfies CG=0 mol, CM=1.5 mol, and CG / CM=0; Comparative Example 4 satisfies CG=1.2 mol, CM=0.3 mol, and CG / CM=4; Comparative Example 5 satisfies CG=0.1 mol, CM=2.5 mol, and CG / CM=0.04; and Comparative Example 6 satisfies CG=1.0 mol, CM=1.0 mol, and CG / CM=1. Example 3 satisfies CG=0.3 mol, CM=1.5 mol, and CG / CM=0.2; Example 4 satisfies CG=0.6 mol, CM=1.5 mol, and CG / CM=0.4; Example 5 satisfies CG=1.0 mol, CM=1.5 mol, and CG / CM=0.7; and Example 6 satisfies CG=0.9 mol, CM=1.0 mol, and CG / CM=0.9.

[0167] Number of pores per unit area (ea / 547μm) 2 Porosity (%) is the number of pores per unit area observed in the cross-section of the cover, and porosity (%) is the area of ​​pores expressed as a percentage based on the observed cross-section of the cover.

[0168] When agglomerates are observed in the sheet covering the sintering section before sintering, cases where agglomerates are observed are marked as O, and cases where no agglomerates are observed are marked as X.

[0169] For breakdown voltage (BDV) evaluation (measured using Keithley equipment), based on the voltage value (V) at which insulation breaks and the process capability index (Cpk), a breakdown voltage greater than or equal to 50V and a Cpk greater than or equal to 1.5 is evaluated as excellent and described as 0; a breakdown voltage greater than or equal to 40V and less than 50V and a Cpk greater than or equal to 1.5 is evaluated as normal and described as △; and a breakdown voltage less than 40V and a Cpk less than 1.5 is evaluated as defective and described as X.

[0170] Regarding the moisture-proof reliability evaluation of Comparative Examples 3 to 6 and each of Examples 3 to 6, after manufacturing 20 channels and mounting 20 chips on the 20 channels respectively, when a voltage of 6.3V is applied to the 20 channels (chips) for 8 hours in an environment with a temperature of 85°C and a relative humidity of 85%, even if the resistance of only one channel (chip) drops to 10... 5 When the resistance is below Ω, it is also considered defective and described as X, and the resistance of all channels (chips) does not drop to 10Ω. 5 When the value is below Ω, it is rated as excellent and described as O.

[0171] [Table 1]

[0172] Comparative Example 3 has the largest number of pores and the highest porosity, and no agglomerates were observed, but its breakdown voltage (BDV) and moisture-proof reliability were poor. Comparative Example 4 has low porosity but a large number of pores, agglomerates were observed, and its breakdown voltage (BDV) and moisture-proof reliability were poor. Comparative Example 5 has low porosity but a large number of pores, and no agglomerates were observed, but its breakdown voltage (BDV) was normal, and its moisture-proof reliability was poor. Comparative Example 6 has a relatively large number of pores and a relatively high porosity, agglomerates were observed, its breakdown voltage (BDV) was normal, and its moisture-proof reliability was poor.

[0173] On the other hand, in Examples 3 to 6, no agglomerates were observed, the number of pores was small and the porosity was low, and the breakdown voltage (BDV) and moisture resistance were excellent.

[0174] Therefore, it can be seen that when the covering part satisfies 0.2≤CG / CM<1.00, the number of pores is small, the porosity is low, no agglomerates appear, and the breakdown voltage (BDV) and moisture-proof reliability are excellent.

[0175] As described above, one of the many effects of this disclosure is that by improving the density of the covering to suppress the formation of pores, the moisture-proof reliability of multilayer electronic components is improved.

[0176] One of the many effects of this disclosure is that it improves the breakdown voltage characteristics of multilayer electronic components.

[0177] However, the various advantages and effects of this disclosure are not limited to the foregoing and can be more readily understood in the process of describing specific embodiments of this disclosure.

[0178] Although embodiments of the present disclosure have been described in detail above, the present disclosure is not limited to the above embodiments and drawings, and the scope of the present disclosure is intended to be defined by the appended claims. Therefore, various substitutions, modifications, and alterations can be made by those skilled in the art without departing from the technical spirit of the present disclosure as described in the claims, and these will also fall within the scope of the present disclosure.

[0179] Furthermore, the term "embodiment" as used in this specification does not imply the same embodiment and may be provided to emphasize and describe different features. The embodiments presented above may be implemented in combination with features of another embodiment. For example, unless otherwise described or contradicted by another embodiment, a description in a particular embodiment may be understood as a description relating to that other embodiment, even if not described in another embodiment.

[0180] The terminology used in this disclosure is for illustrative purposes only and is not intended to limit the scope of this disclosure. Unless the context clearly indicates otherwise, the singular form also includes the plural form.

[0181] While exemplary embodiments have been shown and described above, it will be readily understood by those skilled in the art that modifications and variations may be made without departing from the scope of this disclosure as defined by the appended claims.

Claims

1. A multilayer electronic component, comprising: The main body includes a capacitor forming portion and a cover portion. The capacitor forming portion includes a dielectric layer and internal electrodes alternately disposed with the dielectric layer in a first direction. The cover portion is disposed on two surfaces of the capacitor forming portion in the first direction. as well as External electrodes are disposed on the main body. The covering portion comprises Ti, Ga, and Mg, and the molar number of Ga in the covering portion relative to 100 moles of Ti is CG, and the molar number of Mg in the covering portion relative to 100 moles of Ti is CM. The condition 0.2 ≤ CG / CM < 1.0 is satisfied.

2. The multilayer electronic component according to claim 1, wherein, The CG content is 0.3mol ≤ CG ≤ 1.0mol.

3. The multilayer electronic component according to claim 1, wherein, The CM satisfies 1.0mol≤CM≤2.0mol.

4. The multilayer electronic assembly according to claim 1, wherein, The covering portion has a composition different from that of the dielectric layer.

5. The multilayer electronic component according to claim 1, wherein, The dielectric layer comprises Ti, and When the number of moles of Ga in the dielectric layer relative to 100 moles of Ti is DG, Satisfy DG <CG。 6. The multilayer electronic component according to claim 5, wherein, DG satisfies 0 mol ≤ DG < 0.1 mol.

7. The multilayer electronic assembly according to claim 1, wherein, The cover includes a plurality of dielectric grains, and The average size of the plurality of dielectric grains is greater than or equal to 150 nm and less than or equal to 250 nm.

8. The multilayer electronic component according to claim 1, wherein, The cover includes a plurality of dielectric grains, and The size deviation of the plurality of dielectric grains is less than or equal to 80 nm.

9. The multilayer electronic component according to claim 1, wherein, The covering portion includes a plurality of dielectric grains, grain boundaries disposed between adjacent dielectric grains among the plurality of dielectric grains, and n-centers disposed at points where three or more of the grain boundaries contact each other. At least one of the grain boundaries and / or at least one of the n-centers includes a second phase, the second phase including at least one selected from Ga, Mg and Ti.

10. The multilayer electronic component according to claim 9, wherein, The second phase comprises Ga and Ti, wherein the atomic percentage of Ga in the second phase relative to 100 at% Ti is greater than or equal to 2 at% and less than or equal to 5 at%.

11. The multilayer electronic assembly according to claim 9, wherein, The second phase comprises Mg and Ti, wherein the atomic percentage of Mg in the second phase relative to 100 at% Ti is greater than or equal to 5 at% and less than or equal to 15 at%.

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