Semiconductor device

Abstract

The semiconductor device includes at least one terminal including a conductive cylindrical holder and a metal pin inserted into the holder. In addition, the semiconductor device includes a terminal supporting body that supports the holder, and a sealing resin that covers a part of the holder and the terminal supporting body. The sealing resin has a resin main surface facing one side in the thickness direction. The bracket has a first surface located at an end on one side in the thickness direction, and a first outer surface extending in the thickness direction. The first surface is located at a position different from that of the resin main surface in the thickness direction. The first outer side surface is in contact with the sealing resin. The metal pins protrude further toward one side in the thickness direction than the resin main surface.

Description

[0001] This application is a divisional application; its parent application number is "2023800373377", the application date is April 13, 2023, and the invention title is "Semiconductor Device". Technical Field

[0002] This disclosure relates to semiconductor devices. Background Technology

[0003] Conventionally, semiconductor devices incorporating power switching elements such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are known. Such semiconductor devices are used in all electronic devices, from industrial equipment to home appliances, information terminals, and automotive equipment. Patent Document 1 discloses a conventional semiconductor device (power module). The semiconductor device described in Patent Document 1 includes a semiconductor element and a support substrate (ceramic substrate). The semiconductor element is, for example, an IGBT made of silicon (Si). The support substrate supports the semiconductor element. The support substrate includes an insulating substrate material and conductive layers stacked on both sides of the substrate material. The substrate material is, for example, made of ceramic. Each conductive layer is, for example, made of copper (Cu), and the semiconductor element is bonded to one of the conductive layers.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2021-190505 Summary of the Invention

[0007] The problem that the invention aims to solve

[0008] In recent years, there has been a demand for energy-efficient, high-performance, and miniaturized electronic devices. Therefore, there is a need for improved performance and miniaturization of power modules integrated into electronic devices.

[0009] One object of this disclosure is to provide a semiconductor device that has been improved compared to the prior art. In particular, one object of this disclosure is to provide a semiconductor device suitable for achieving improved performance and miniaturization, in view of the above.

[0010] The semiconductor device provided by the first aspect of this disclosure includes: at least one terminal, which includes a conductive cylindrical support and a metal pin inserted into the support; a terminal support that supports the support; and an encapsulating resin that covers a portion of the support and the terminal support, the encapsulating resin having a resin main surface facing one side in the thickness direction, the support having a first surface located at an end on one side in the thickness direction and a first outer surface extending in the thickness direction, the first surface being located at a different position from the resin main surface in the thickness direction, the first outer surface being in contact with the encapsulating resin, and the metal pin protruding further in the thickness direction than the resin main surface.

[0011] The semiconductor device provided by the second aspect of this disclosure includes: a support substrate having a main surface facing one side in the thickness direction; at least one terminal including a conductive support disposed on the main surface and a metal pin inserted into the support; and a sealing resin having a resin main surface facing one side in the thickness direction and covering at least a portion of the support substrate, wherein in at least one of the at least one terminal, the entire support is exposed from the sealing resin, and the metal pin protrudes further in the thickness direction than the resin main surface.

[0012] Invention Effects

[0013] Based on the above structure, a preferred configuration for achieving performance improvement and miniaturization can be provided in a semiconductor device.

[0014] Other features and advantages of this disclosure will become clearer from the detailed description that follows with reference to the accompanying drawings. Attached Figure Description

[0015] Figure 1 This is a perspective view of a semiconductor device according to the first embodiment of the present disclosure.

[0016] Figure 2 This is a perspective view showing the main parts of a semiconductor device according to the first embodiment of the present disclosure.

[0017] Figure 3 This is a perspective view showing the main parts of a semiconductor device according to the first embodiment of the present disclosure.

[0018] Figure 4 This is a top view showing a semiconductor device according to the first embodiment of the present disclosure.

[0019] Figure 5 This is a top view showing the main parts of a semiconductor device according to the first embodiment of the present disclosure.

[0020] Figure 6This is a side view showing the main part of the semiconductor device according to the first embodiment of the present disclosure.

[0021] Figure 7 This is an enlarged top view showing the main parts of the semiconductor device according to the first embodiment of the present disclosure.

[0022] Figure 8 This is a top view showing the main parts of a semiconductor device according to the first embodiment of the present disclosure.

[0023] Figure 9 This is a top view showing the main parts of a semiconductor device according to the first embodiment of the present disclosure.

[0024] Figure 10 This is a side view of a semiconductor device according to a first embodiment of the present disclosure.

[0025] Figure 11 This is a bottom view showing a semiconductor device according to the first embodiment of the present disclosure.

[0026] Figure 12 It is along Figure 5 A cross-sectional view of line XII-XII.

[0027] Figure 13 It is along Figure 5 A cross-sectional view of line XIII-XIII.

[0028] Figure 14 This is an enlarged cross-sectional view showing the main part of the semiconductor device according to the first embodiment of the present disclosure.

[0029] Figure 15 This is an enlarged cross-sectional view showing the main part of the semiconductor device according to the first embodiment of the present disclosure.

[0030] Figure 16 It's enlarged. Figure 13 A magnified view of a portion of the image.

[0031] Figure 17 It's enlarged. Figure 4 A magnified view of a portion of the image.

[0032] Figure 18 It is along Figure 5 A cross-sectional view of the XVIII-XVIII line.

[0033] Figure 19 It is along Figure 5 A cross-sectional view of the XIX-XIX line.

[0034] Figure 20 It is along Figure 5 A sectional view of the XX-XX line.

[0035] Figure 21 It is along Figure 5 A cross-sectional view of the XXI-XXI line.

[0036] Figure 22 It is along Figure 5 A sectional view of the XXII-XXII line.

[0037] Figure 23 This refers to a semiconductor device representing a first variation of the first embodiment. Figure 16 The same enlarged sectional view.

[0038] Figure 24 This refers to a semiconductor device in a second variation of the first embodiment. Figure 16 The same enlarged sectional view.

[0039] Figure 25 This refers to a semiconductor device in a third variation of the first embodiment. Figure 16 The same enlarged sectional view.

[0040] Figure 26 This refers to the semiconductor device of the fourth variation of the first embodiment. Figure 16 The same enlarged sectional view.

[0041] Figure 27 This refers to the semiconductor device of the fifth variation of the first embodiment. Figure 16 The same enlarged sectional view.

[0042] Figure 28 This is a perspective view of a semiconductor device according to a second embodiment of the present disclosure.

[0043] Figure 29 This refers to the semiconductor device of the second embodiment of this disclosure. Figure 16 The same enlarged sectional view.

[0044] Figure 30 This is a perspective view of a semiconductor device according to a first embodiment of the second aspect of this disclosure.

[0045] Figure 31 This is a top view showing a semiconductor device according to a first embodiment of the second aspect of this disclosure.

[0046] Figure 32 Is Figure 31 The top view shows the sealing resin diagram with imaginary lines.

[0047] Figure 33 Is Figure 32 The top view omits the sealing resin and the second conductive component.

[0048] Figure 34Is Figure 33 The top view omits the diagram of the first conductive component.

[0049] Figure 35 This is a bottom view showing a semiconductor device according to a first embodiment of the second aspect of this disclosure.

[0050] Figure 36 It is along Figure 32 A sectional view of the XXXVI-XXXVI line.

[0051] Figure 37 It's enlarged. Figure 36 A partially enlarged cross-sectional view of a portion (near the first element).

[0052] Figure 38 It's enlarged. Figure 36 A partially enlarged cross-sectional view of a portion (near the second element).

[0053] Figure 39 It is along Figure 32 A cross-sectional view of the XXXIX-XXXIX line.

[0054] Figure 40 It is along Figure 32 A cross-sectional view of the XL-XL line.

[0055] Figure 41 It is along Figure 32 A cross-sectional view of the XLI-XLI line.

[0056] Figure 42 It is along Figure 32 A sectional view of the XLII-XLII line.

[0057] Figure 43 It is along Figure 32 A cross-sectional view of the XLIII-XLIII line.

[0058] Figure 44 It's enlarged. Figure 40 A partially enlarged sectional view.

[0059] Figure 45 This is a cross-sectional view showing a step in a method for manufacturing a semiconductor device based on a first embodiment of the second aspect of this disclosure.

[0060] Figure 46 This is a top view of a semiconductor device representing a first variation of the first embodiment of the second scheme.

[0061] Figure 47 It is along Figure 46 A sectional view of the XLVII-XLVII line.

[0062] Figure 48 It is along Figure 46 A cross-sectional view of the XLVIII-XLVIII line.

[0063] Figure 49 This refers to a semiconductor device in a second variation of the first embodiment of the second scheme. Figure 40 Same sectional view.

[0064] Figure 50 This refers to a semiconductor device in a third variation of the first embodiment of the second scheme. Figure 47 Same sectional view.

[0065] Figure 51 This refers to a semiconductor device in a fourth variation of the first embodiment of the second scheme. Figure 40 Same sectional view.

[0066] Figure 52 This is a top view of a semiconductor device representing a fifth variation of the first embodiment of the second scheme.

[0067] Figure 53 It is along Figure 52 A cross-sectional view of line LIII-LIII. Detailed Implementation

[0068] Hereinafter, preferred embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. First, referring to... Figures 1 to 29 A semiconductor device based on the first aspect of this disclosure will be described. Then, referring to... Figures 30-53 A semiconductor device based on the second aspect of this disclosure will be described. Furthermore, in Figures 1 to 29 The reference symbols used in (the first scheme) are the same as those in... Figures 30-53 The reference symbols used in (the second scheme) are independent of each other. Therefore, for example, if there are cases where the same reference symbol represents different parts of the first scheme and the second scheme, there are also cases where different reference symbols represent the same (or similar) parts of the first scheme and the second scheme.

[0069] The terms "first," "second," and "third" used in this disclosure are for identification purposes only and are not intended to require that these objects be labeled in order.

[0070] In this disclosure, unless otherwise specified, "something A is formed on something B" and "something A is formed on something B" include "something A is directly formed on something B" and "another object is sandwiched between something A and something B, and something A is formed on something B." Similarly, unless otherwise specified, "something A is disposed on something B" and "something A is disposed on something B" include "something A is directly disposed on something B" and "another object is sandwiched between something A and something B, and something A is disposed on something B." Likewise, unless otherwise specified, "something A is located on something B" includes "something A is connected to something B, and something A is located on something B" and "another object is sandwiched between something A and something B, and something A is located on something B." Furthermore, unless otherwise specified, the phrase "object A and object B overlap when viewed from a certain direction" includes both "object A and object B completely overlap" and "object A and object B partially overlap". Additionally, in this disclosure, "a surface A facing direction B (either side or side)" is not limited to the case where the angle between surface A and direction B is 90°, but includes the case where surface A is tilted relative to direction B.

[0071] First implementation method (first scheme):

[0072] Figures 1 to 22 This describes a semiconductor device according to a first embodiment of the first aspect of the present disclosure. The semiconductor device A1 of this embodiment includes a plurality of first semiconductor elements 10A, a plurality of second semiconductor elements 10B, a support substrate 3, a first terminal 41, a second terminal 42, a plurality of third terminals 43, a fourth terminal 44, a plurality of control terminals 45, a control terminal support 48, a first conductive member 5, a second conductive member 6, and an encapsulating resin 8.

[0073] Figure 1 This is a three-dimensional diagram representing semiconductor device A1. Figure 2 , Figure 3 This is a three-dimensional view showing the main parts of semiconductor device A1. Figure 4 This is a top view of semiconductor device A1. Figure 5 This is a top view showing the main part of semiconductor device A1. Figure 6 This is a side view showing the main part of semiconductor device A1. Figure 7 This is an enlarged top view showing the main part of semiconductor device A1. Figure 8 , Figure 9 This is a top view showing the main part of semiconductor device A1. Figure 10 This is a side view of semiconductor device A1. Figure 11 This is a bottom view showing semiconductor device A1. Figure 12 It is along Figure 5 A cross-sectional view of line XII-XII. Figure 13It is along Figure 5 A cross-sectional view of line XIII-XIII. Figure 14 , Figure 15 This is an enlarged cross-sectional view showing the main part of semiconductor device A1. Figure 16 It's enlarged. Figure 13 A magnified view of a portion of the image. Figure 17 It's enlarged. Figure 4 A magnified view of a portion of the image. Figure 18 It is along Figure 5 A cross-sectional view of the XVIII-XVIII line. Figure 19 It is along Figure 5 A cross-sectional view of the XIX-XIX line. Figure 20 It is along Figure 5 A sectional view of the XX-XX line. Figure 21 It is along Figure 5 A cross-sectional view of the XXI-XXI line. Figure 22 It is along Figure 5 A sectional view of the XXII-XXII line.

[0074] For ease of explanation, the three mutually orthogonal directions are designated as the x-direction, y-direction, and z-direction. The z-direction is an example of the thickness direction, and the x-direction is an example of the first direction. Furthermore, one side along the x-direction is called the x1 side, and the other side is called the x2 side. Similarly, one side along the y-direction is called the y1 side, and the other side is called the y2 side. Likewise, one side along the z-direction is called the z1 side, and the other side is called the z2 side.

[0075] Multiple first semiconductor elements 10A and multiple second semiconductor elements 10B are electronic components that serve as the functional hub of the semiconductor device A1. The constituent materials of each first semiconductor element 10A and each second semiconductor element 10B are, for example, semiconductor materials primarily based on SiC (silicon carbide). This semiconductor material is not limited to SiC; it can also be Si (silicon), GaN (gallium nitride), or C (diamond), etc. Each first semiconductor element 10A and each second semiconductor element 10B is, for example, a power semiconductor chip with switching function such as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). In this embodiment, the case where the first semiconductor element 10A and the second semiconductor element 10B are MOSFETs is shown, but it is not limited to this; it can also be other transistors such as IGBTs (Insulated Gate Bipolar Transistors). Each first semiconductor element 10A and each second semiconductor element 10B is the same element. Each of the first semiconductor elements 10A and each of the second semiconductor elements 10B is, for example, an n-channel MOSFET, but it can also be a p-channel MOSFET.

[0076] like Figure 14 , Figure 15 As shown, the first semiconductor element 10A and the second semiconductor element 10B each have a main surface 101 and a back surface 102. In each of the first semiconductor element 10A and the second semiconductor element 10B, the main surface 101 and the back surface 102 are spaced apart in the z-direction. The main surface 101 faces the z1 side in the z-direction, and the back surface 102 faces the z2 side in the z-direction.

[0077] In this embodiment, the semiconductor device A1 includes four first semiconductor elements 10A and four second semiconductor elements 10B, but the number of first semiconductor elements 10A and the number of second semiconductor elements 10B are not limited to this structure and can be appropriately changed according to the performance requirements of the semiconductor device A1. Figure 8 , Figure 9 In this example, four of each of the first semiconductor element 10A and the second semiconductor element 10B are provided. The number of first semiconductor elements 10A and second semiconductor elements 10B can be two or three, or five or more. The number of first semiconductor elements 10A and the number of second semiconductor elements 10B can be equal or different. The number of first semiconductor elements 10A and second semiconductor elements 10B is determined according to the current capacity handled by the semiconductor device A1.

[0078] Semiconductor device A1 is configured, for example, as a half-bridge switching circuit. In this case, a plurality of first semiconductor elements 10A constitute the upper branch circuit of semiconductor device A1, and a plurality of second semiconductor elements 10B constitute the lower branch circuit. In the upper branch circuit, the plurality of first semiconductor elements 10A are connected in parallel with each other; in the lower branch circuit, the first semiconductor elements 10A are connected in parallel with each other; and in the lower branch circuit, the plurality of second semiconductor elements 10B are connected in parallel with each other. Each first semiconductor element 10A and each second semiconductor element 10B are connected in series to form a bridging layer.

[0079] like Figure 8 , Figure 9 as well as Figure 21 As shown, multiple first semiconductor elements 10A are respectively mounted on the first conductive portion 32A of the support substrate 3, which will be described later. Figure 8 , Figure 9 In the example shown, a plurality of first semiconductor elements 10A are arranged, for example, in the y-direction and spaced apart from each other. Each first semiconductor element 10A is electrically bonded to a first conductive portion 32A via a conductive bonding material 19. When each first semiconductor element 10A is bonded to the first conductive portion 32A, the back surface 102 of the element faces the first conductive portion 32A. Furthermore, unlike this embodiment, the plurality of first semiconductor elements 10A may also be mounted on a metal component that is different from a portion of the DBC substrate, etc. In this case, the metal component corresponds to the first conductive portion of this disclosure. This metal component may also be supported, for example, on the DBC substrate, etc.

[0080] like Figure 8 , Figure 9 as well as Figure 20 As shown, multiple second semiconductor elements 10B are respectively mounted on the second conductive portion 32B of the support substrate 3, which will be described later. Figure 8 , Figure 9 In the example shown, a plurality of second semiconductor elements 10B are arranged, for example, in the y-direction and spaced apart from each other. Each second semiconductor element 10B is electrically bonded to a second conductive portion 32B via a conductive bonding material 19. When each second semiconductor element 10B is bonded to the second conductive portion 32B, the back surface 102 of the element faces the second conductive portion 32B. (The last sentence appears to be incomplete and possibly refers to a different example.) Figure 9 As understood, when viewed in the x-direction, the plurality of first semiconductor elements 10A overlaps with the plurality of second semiconductor elements 10B, but they may not overlap. Furthermore, unlike this embodiment, the plurality of second semiconductor elements 10B may also be mounted on a metal component that is different from a portion of the DBC substrate, etc. In this case, the metal component corresponds to the second conductive portion in this disclosure. This metal component may, for example, be supported on the DBC substrate, etc.

[0081] Multiple first semiconductor elements 10A and multiple second semiconductor elements 10B each have a first main surface electrode 11, a second main surface electrode 12, a third main surface electrode 13, and a back electrode 15. The structures of the first main surface electrode 11, the second main surface electrode 12, the third main surface electrode 13, and the back electrode 15, as described below, are common to each first semiconductor element 10A and each second semiconductor element 10B. The first main surface electrode 11, the second main surface electrode 12, and the third main surface electrode 13 are disposed on the main surface 101 of the element. The first main surface electrode 11, the second main surface electrode 12, and the third main surface electrode 13 are insulated by an insulating film (not shown). The back electrode 15 is disposed on the back surface 102 of the element.

[0082] The first main surface electrode 11 is, for example, a gate electrode, and receives a drive signal (e.g., gate voltage) for driving the first semiconductor element 10A (second semiconductor element 10B). In the first semiconductor element 10A (second semiconductor element 10B), the second main surface electrode 12 is, for example, a source electrode, through which a source current flows. In this embodiment, the second main surface electrode 12 has a gate finger 121. The gate finger 121 is, for example, formed by a linear insulator extending in the x-direction, dividing the second main surface electrode 12 into two parts in the y-direction. The third main surface electrode 13 is, for example, a source sensing electrode, through which a source current flows. The back electrode 15 is, for example, a drain electrode, through which a drain current flows. The back electrode 15 covers the entire (or substantially the entire) back surface 102 of the element. The back electrode 15 is, for example, formed by plating with Ag (silver).

[0083] If a drive signal (gate voltage) is input to the first main surface electrode 11 (gate electrode), each of the first semiconductor elements 10A (each of the second semiconductor elements 10B) switches between an on state and an off state according to the drive signal. In the on state, current flows from the back electrode 15 (drain electrode) to the second main surface electrode 12 (source electrode); in the off state, no current flows. That is, each of the first semiconductor elements 10A (each of the second semiconductor elements 10B) performs a switching operation. The semiconductor device A1 uses the switching functions of the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B to convert, for example, a DC voltage input to a fourth terminal 44 between two first terminals 41 and a second terminal 42 into an AC voltage, and outputs an AC voltage from a third terminal 43. Each of the plurality of first semiconductor elements 10A corresponds to a first switching element in this disclosure. Each of the plurality of second semiconductor elements 10B corresponds to a second switching element in this disclosure.

[0084] In semiconductor device A1, such as Figure 5 , Figure 8 , Figure 9As shown, a thermistor 17 is included. The thermistor 17 is used as a temperature sensing sensor. In addition to including the thermistor 17, the structure may also include, for example, a temperature-sensing diode, or it may not include the thermistor 17.

[0085] The support substrate 3 supports multiple first semiconductor elements 10A and multiple second semiconductor elements 10B. The specific structure of the support substrate 3 is not limited; for example, it can be composed of a DBC (Direct Bonded Copper) substrate or an AMB (Active Metal Brazing) substrate. The support substrate 3 includes an insulating layer 31, a support conductor 32, and a back metal layer 33. The support conductor 32 includes a first conductive portion 32A and a second conductive portion 32B. The z-direction dimension of the support substrate 3 is, for example, 0.4 mm or more and 3.0 mm or less.

[0086] The insulating layer 31 is, for example, a ceramic with excellent thermal conductivity. Examples of such ceramics include SiN (silicon nitride). The insulating layer 31 is not limited to ceramic and can also be an insulating resin sheet, etc. The insulating layer 31 is, for example, rectangular in shape when viewed from above. The dimension of the insulating layer 31 in the z-direction is, for example, 0.05 mm or more and 1.0 mm or less.

[0087] A first conductive portion 32A supports a plurality of first semiconductor elements 10A, and a second conductive portion 32B supports a plurality of second semiconductor elements 10B. The first conductive portion 32A and the second conductive portion 32B are formed on the upper surface of the insulating layer 31 (the surface facing the z1 side in the z direction). The constituent material of the first conductive portion 32A and the second conductive portion 32B includes, for example, Cu (copper). This constituent material may also include materials other than Cu (copper), such as Al (aluminum). The first conductive portion 32A and the second conductive portion 32B are spaced apart in the x direction. The first conductive portion 32A is located on the x1 side in the x direction relative to the second conductive portion 32B. The first conductive portion 32A and the second conductive portion 32B are, for example, rectangular in shape when viewed from above. The first conductive portion 32A and the second conductive portion 32B, together with the first conductive member 5 and the second conductive member 6, constitute the path of the main circuit current switched by the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B.

[0088] The first conductive portion 32A has a first main surface 301A. The first main surface 301A is a plane facing the z1 side in the z direction. A plurality of first semiconductor elements 10A are bonded to the first main surface 301A of the first conductive portion 32A via a conductive bonding material 19. The second conductive portion 32B has a second main surface 301B. The second main surface 301B is a plane facing the z1 side in the z direction. A plurality of second semiconductor elements 10B are bonded to the second main surface 301B of the second conductive portion 32B via the conductive bonding material 19. The constituent material of the conductive bonding material 19 is not particularly limited, and may be, for example, solder, metal paste, or sintered metal. The z-direction dimension of the first conductive portion 32A and the second conductive portion 32B is, for example, 0.1 mm or more and 1.5 mm or less.

[0089] A back metal layer 33 is formed on the lower surface of the insulating layer 31 (the surface facing the z2 side in the z direction). The back metal layer 33 is made of the same material as the supporting conductor 32. The back metal layer 33 has a back surface 302. The back surface 302 is a plane facing the z2 side in the z direction. Figure 11 In the example shown, the back surface 302 is exposed from the sealing resin 8, for example. A heat dissipation component (e.g., a heat sink, not shown) can be mounted on the back surface 302. Alternatively, the back surface 302 may not be exposed from the sealing resin 8 but may be covered by the sealing resin 8. The back metal layer 33 overlaps with both the first conductive portion 32A and the second conductive portion 32B when viewed from above.

[0090] The first terminal 41, the second terminal 42, the plurality of third terminals 43, and the fourth terminal 44 are each composed of a plate-shaped metal plate. This metal plate, for example, contains Cu (copper) or a Cu (copper) alloy. Figures 1-5 , Figure 8 , Figure 9 as well as Figure 11 In the example shown, semiconductor device A1 has one first terminal 41, one second terminal 42 and one fourth terminal 44, and two third terminals 43, but there is no limitation on the number of each terminal.

[0091] A DC voltage, which is the object of power conversion, is input to the first terminal 41, the second terminal 42, and the fourth terminal 44. The fourth terminal 44 is the positive terminal (P terminal), and the first terminal 41 and the second terminal 42 are the negative terminals (N terminals). The AC voltage, which has been converted by the first semiconductor element 10A and the second semiconductor element 10B, is output from a plurality of third terminals 43. The first terminal 41, the second terminal 42, the plurality of third terminals 43, and the fourth terminal 44 each include a portion covered by the sealing resin 8 and a portion exposed from the sealing resin 8.

[0092] like Figure 13As shown, the fourth terminal 44 is electrically connected to the first conductive part 32A. There are no limitations on the method of electrical connection; methods such as ultrasonic bonding, laser bonding, welding, or the use of solder, metal paste, silver sintered bodies, etc., are suitable. Figure 8 , Figure 9 As shown, the fourth terminal 44 is located on the x1 side in the x direction relative to the plurality of first semiconductor elements 10A and the first conductive portion 32A. The fourth terminal 44 is connected to the first conductive portion 32A, and is also connected to the back electrode 15 (drain electrode) of each first semiconductor element 10A via the first conductive portion 32A.

[0093] The first terminal 41 and the second terminal 42 are connected to the second conductive member 6. In this embodiment, the first terminal 41 and the second conductive member 6 are integrally formed. The integral formation of the first terminal 41 and the second conductive member 6 means, for example, that they are formed by cutting and bending a single metal sheet material, and do not include a structure containing bonding materials for joining them together. Furthermore, in this embodiment, the second terminal 42 and the second conductive member 6 are integrally formed. However, the first terminal 41 and the second terminal 42 can simply be connected to the second conductive member 6, or they can differ from this embodiment by having a joint portion for joining them together. Figure 5 , Figure 8 As shown, the first terminal 41 and the second terminal 42 are located on the x1 side in the x direction relative to the plurality of first semiconductor elements 10A and the first conductive portion 32A, respectively. The first terminal 41 and the second terminal 42 are respectively connected to the second conductive member 6, and are connected to the second main surface electrode 12 (source electrode) of each second semiconductor element 10B via the second conductive member 6.

[0094] like Figures 1-5 as well as Figure 11 As shown, the first terminal 41, the second terminal 42, and the fourth terminal 44 protrude from the encapsulating resin 8 in the semiconductor device A1 in the x-direction x1 side. The first terminal 41, the second terminal 42, and the fourth terminal 44 are spaced apart from each other. The first terminal 41 and the second terminal 42 are located on opposite sides of each other in the y-direction, separated by the fourth terminal 44. The first terminal 41 is located on the y1 side of the fourth terminal 44 in the y-direction, and the second terminal 42 is located on the y2 side of the fourth terminal 44 in the y-direction. When viewed in the y-direction, the first terminal 41, the second terminal 42, and the fourth terminal 44 overlap each other.

[0095] As from Figure 8 , Figure 9 as well as Figure 12As understood, the two third terminals 43 are respectively electrically connected to the second conductive part 32B. There are no limitations on the method of electrical connection; methods such as ultrasonic bonding, laser bonding, welding, or the use of solder, metal paste, silver sintered bodies, etc., are suitable. Figure 8 As shown, the two third terminals 43 are located on the x2 side in the x direction, respectively, relative to the plurality of second semiconductor elements 10B and the second conductive portion 32B. Each third terminal 43 is conductive to the second conductive portion 32B, and is also conductive to the back electrode 15 (drain electrode) of each second semiconductor element 10B via the second conductive portion 32B. Furthermore, the number of third terminals 43 is not limited to two; for example, it can be one or more. For example, when there is only one third terminal 43, it is desirable to connect it to the central portion in the y direction of the second conductive portion 32B.

[0096] The plurality of control terminals 45 are pin-shaped terminals used to control the driving of each first semiconductor element 10A and each second semiconductor element 10B. The plurality of control terminals 45 are, for example, crimp terminals. The plurality of control terminals 45 include a plurality of first control terminals 46A-46E and a plurality of second control terminals 47A-47D. The plurality of first control terminals 46A-46E are used for controlling each first semiconductor element 10A, etc. The plurality of second control terminals 47A-47D are used for controlling each second semiconductor element 10B, etc.

[0097] like Figure 8 , Figure 13 as well as Figure 22 As shown, a plurality of first control terminals 46A to 46E are arranged at intervals in the y-direction. Each first control terminal 46A to 46E is supported on the first conductive portion 32A via a control terminal support 48 (the first support portion 48A described later). Figure 5 as well as Figure 8 As shown, each of the first control terminals 46A to 46E is located in the x-direction between the plurality of first semiconductor elements 10A and the first terminal 41, the second terminal 42 and the fourth terminal 44.

[0098] The first control terminal 46A is a terminal (gate terminal) for inputting drive signals to the plurality of first semiconductor elements 10A. A drive signal (e.g., a gate voltage) for driving the plurality of first semiconductor elements 10A is input to the first control terminal 46A.

[0099] The first control terminal 46B is a terminal (source sensing terminal) for detecting the source signal of the plurality of first semiconductor elements 10A. The voltage (voltage corresponding to the source current) applied from the first control terminal 46B to each of the second main surface electrodes 12 (source electrodes) of the plurality of first semiconductor elements 10A is detected.

[0100] The first control terminal 46C and the first control terminal 46D are terminals that are connected to the thermistor 17.

[0101] The first control terminal 46E is a terminal (drain sensing terminal) for detecting the drain signal of the plurality of first semiconductor elements 10A. The voltage (voltage corresponding to the drain current) applied from the first control terminal 46E to each back electrode 15 (drain electrode) of the plurality of first semiconductor elements 10A is detected.

[0102] Multiple second control terminals 47A to 47D are arranged at intervals in the y-direction. For example... Figure 8 as well as Figure 13 As shown, each of the second control terminals 47A to 47D is supported on the second conductive portion 32B via the control terminal support 48 (the second support portion 48B described later). Figure 5 as well as Figure 8 As shown, each of the second control terminals 47A to 47D is located in the x-direction between the plurality of second semiconductor elements 10B and the two third terminals 43.

[0103] The second control terminal 47A is a terminal (gate terminal) for inputting drive signals to the plurality of second semiconductor elements 10B. A drive signal (e.g., a gate voltage) for driving the plurality of second semiconductor elements 10B is input to the second control terminal 47A. The second control terminal 47B is a terminal (source sensing terminal) for detecting source signals of the plurality of second semiconductor elements 10B. The voltage (voltage corresponding to the source current) applied from the second control terminal 47B to each of the second main surface electrodes 12 (source electrodes) of the plurality of second semiconductor elements 10B is detected. The second control terminals 47C and 47D are terminals that are connected to the thermistor 17.

[0104] The multiple control terminals 45 (multiple first control terminals 46A to 46E and multiple second control terminals 47A to 47D) each include a bracket 451 and a metal pin 452.

[0105] The support 451 is made of a conductive material. For example... Figure 14 , Figure 15 As shown, the bracket 451 is bonded to the control terminal support 48 (the first metal layer 482 described later) via a conductive bonding material 459. Figure 16 As shown, the support 451 includes a cylindrical portion 453, a first convex edge portion 454, and a second convex edge portion 455.

[0106] The cylindrical portion 453 extends in the z-direction and is, for example, cylindrical. The cylindrical portion 453 has a first outer surface 453a and a first inner surface 453b. The first outer surface 453a, when viewed in the z-direction, faces radially outward from the cylindrical portion 453 and extends in the z-direction. The first inner surface 453b faces the opposite side to the first outer surface 453a, and when viewed in the z-direction, faces radially inward from the cylindrical portion 453 and extends in the z-direction.

[0107] The first convex edge 454 is connected to the end of the cylindrical portion 453 on the z1 side in the z direction. The first convex edge 454 has a first surface 454a and a second surface 454b. The first surface 454a is the surface facing the z1 side in the z direction. The first surface 454a is located at the end of the support 451 on the z1 side in the z direction. When viewed in the z direction, the first surface 454a is annular (circular or rectangular). The second surface 454b is located on the z2 side in the z direction, which is closer to the first surface 454a, and is the surface facing the z2 side in the z direction.

[0108] The second protruding edge 455 is connected to the end of the cylindrical portion 453 on the z2 side in the z direction. In this embodiment, the second protruding edge 455 is bonded to the control terminal support 48 (the first metal layer 482 described later) via a conductive bonding material 459.

[0109] Metal pins 452 are inserted into at least the first protruding edge 454 and the cylindrical portion 453 of the bracket 451. A portion of the bracket 451 is covered by sealing resin 8. At least the first outer surface 453a (cylindrical portion 453) is in contact with the sealing resin 8. Figure 16 In the example shown, the entire first outer surface 453a of the cylindrical portion 453 and the second surface 454b of the first convex edge portion 454 are in contact with the sealing resin 8.

[0110] The metal pin 452 is a rod-shaped component extending in the z-direction. The metal pin 452 is supported by being pressed into a bracket 451. The metal pin 452 is in communication with the control terminal support 48 (the first metal layer 482 described later) at least via the bracket 451. Figures 14-16 In the example shown, the metal pin 452 is not inserted into the lower end of the bracket 451 (the end on the z2 side in the z direction), and the lower end of the metal pin 452 is away from the conductive bonding material 459. In this case, the metal pin 452 is connected to the control terminal support 48 (first metal layer 482) via the bracket 451. Unlike the illustrated example, when the lower end of the metal pin 452 (the end on the z2 side in the z direction) is in contact with the conductive bonding material 459 in the through hole of the bracket 451, the metal pin 452 is connected to the control terminal support 48 via the conductive bonding material 459. The metal pin 452 protrudes further in the z1 direction than the upper surface of the sealing resin 8 (the resin main surface 81 described later).

[0111] The control terminal support 48 supports a plurality of control terminals 45. The control terminal support 48 is located in the z-direction between the first main surface 301A and the second main surface 301B and the plurality of control terminals 45.

[0112] The control terminal support 48 includes a first support portion 48A and a second support portion 48B. The first support portion 48A is disposed on the first conductive portion 32A and supports a plurality of first control terminals 46A to 46E among the plurality of control terminals 45. Figure 14 As shown, the first support portion 48A is joined to the first conductive portion 32A via a bonding material 49. The bonding material 49 can be conductive or insulating, for example, solder. The second support portion 48B is disposed on the second conductive portion 32B and supports a plurality of second control terminals 47A to 47D among the plurality of control terminals 45. Figure 15 As shown, the second support portion 48B is joined to the second conductive portion 32B via the bonding material 49.

[0113] The control terminal support 48 (each of the first support portion 48A and the second support portion 48B) is, for example, made of a DBC (Direct Bonded Copper) substrate. The control terminal support 48 has an insulating layer 481, a first metal layer 482 and a second metal layer 483 stacked on top of each other.

[0114] The insulating layer 481 is made of ceramic, for example. The insulating layer 481 is rectangular in shape, for example, when viewed from above.

[0115] like Figure 14 , Figure 15 As shown, a first metal layer 482 is formed on the upper surface of the insulating layer 481. Each control terminal 45 is vertically disposed on the first metal layer 482. The first metal layer 482 may contain, for example, Cu (copper) or a Cu (copper) alloy. Figure 8 As shown, the first metal layer 482 includes a first portion 482A, a second portion 482B, a third portion 482C, a fourth portion 482D, a fifth portion 482E, and a sixth portion 482F. The first portion 482A, the second portion 482B, the third portion 482C, the fourth portion 482D, the fifth portion 482E, and the sixth portion 482F are spaced apart from each other and are insulated from each other.

[0116] The first portion 482A is provided with a plurality of metal wires 71 connected together, and is connected to the first main surface electrode 11 (gate electrode) of each first semiconductor element 10A (each second semiconductor element 10B) via each metal wire 71. The first portion 482A and the sixth portion 482F are provided with a plurality of metal wires 73 connected together. Thus, the sixth portion 482F is connected to the first main surface electrode 11 (gate electrode) of each first semiconductor element 10A (each second semiconductor element 10B) via both the metal wires 73 and 71. Figure 8 As shown, a first control terminal 46A is connected to the sixth portion 482F of the first support portion 48A, and a second control terminal 47A is connected to the sixth portion 482F of the second support portion 48B.

[0117] The second part 482B provides a plurality of metal wires 72 for bonding, and through each metal wire 72, is connected to the third main surface electrode 13 (source sensing electrode) of each first semiconductor element 10A (each second semiconductor element 10B). Figure 8 As shown, a first control terminal 46B is connected to the second part 482B of the first support portion 48A, and a second control terminal 47B is connected to the second part 482B of the second support portion 48B.

[0118] Part 3, 482C, and Part 4, 482D, are used to connect thermistor 17. For example... Figure 8 As shown, first control terminals 46C and 46D are connected to the third portion 482C and the fourth portion 482D of the first support portion 48A, and second control terminals 47C and 47D are connected to the third portion 482C and the fourth portion 482D of the second support portion 48B.

[0119] The fifth portion 482E of the first support portion 48A is connected to the metal wire 74, and is connected to the first conductive portion 32A via the metal wire 74. Figure 8 As shown, a first control terminal 46E is joined to the fifth portion 482E of the first support portion 48A. The fifth portion 482E of the second support portion 48B is not connected to other structural parts. The aforementioned metal wires 71 to 74 are, for example, connecting leads. The constituent materials of each metal wire 71 to 74 include, for example, any one of Au (gold), Al (aluminum), or Cu (copper).

[0120] like Figure 14 , Figure 15 As shown, a second metal layer 483 is formed on the lower surface of the insulating layer 481. Figure 14 As shown, the second metal layer 483 of the first support portion 48A is bonded to the first conductive portion 32A via a bonding material 49. Figure 15 As shown, the second metal layer 483 of the second support portion 48B is bonded to the second conductive portion 32B via the bonding material 49.

[0121] The first conducting component 5 and the second conducting component 6, together with the first conductive portion 32A and the second conductive portion 32B, constitute the path of the main circuit current switched by the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B. The first conducting component 5 and the second conducting component 6 are spaced apart from the first main surface 301A and the second main surface 301B in the z-direction z1 side, and overlap with the first main surface 301A and the second main surface 301B when viewed from above. In this embodiment, the first conducting component 5 and the second conducting component 6 are each made of a metal plate. The metal includes, for example, Cu (copper). Specifically, the first conducting component 5 and the second conducting component 6 are appropriately bent metal plates.

[0122] The first conducting component 5 is connected to the second main surface electrode 12 (source electrode) and the second conductive part 32B of each first semiconductor element 10A, thereby making the second main surface electrode 12 of each first semiconductor element 10A conductive with the second conductive part 32B. The first conducting component 5 constitutes the path of the main circuit current switched by the multiple first semiconductor elements 10A. Figure 7 as well as Figure 8 As shown, the first conductive component 5 includes a main part 51, a plurality of first connecting parts 52 and a plurality of second connecting parts 53.

[0123] The main portion 51 is located in the x-direction between the plurality of first semiconductor elements 10A and the second conductive portion 32B, and is a strip-shaped portion extending in the y-direction when viewed from above. The main portion 51 overlaps with both the first conductive portion 32A and the second conductive portion 32B when viewed from above, and is spaced apart in the z-direction from the first main surface 301A and the second main surface 301B towards the z1 side. Figure 18 As shown, the main part 51 is located on the z2 side in the z direction relative to the third path part 66 and the fourth path part 67 of the second conductive member 6 described later, and is positioned closer to the first main surface 301A and the second main surface 301B than the third path part 66 and the fourth path part 67.

[0124] In this embodiment, the main part 51 is arranged in parallel with the first main surface 301A and the second main surface 301B.

[0125] like Figure 8 As shown, the main portion 51 extends continuously in the y-direction corresponding to the region where a plurality of first semiconductor elements 10A are disposed. In this embodiment, as... Figure 7 , Figure 8 , Figure 13As shown, a plurality of first openings 514 are formed in the main portion 51. The plurality of first openings 514 are, for example, through holes extending in the z-direction (the thickness direction of the main portion 51). The plurality of first openings 514 are arranged at intervals in the y-direction. The plurality of first openings 514 are respectively provided corresponding to a plurality of first semiconductor elements 10A. In this embodiment, four first openings 514 are provided in the main portion 51, and the positions of these first openings 514 and the plurality (four) first semiconductor elements 10A in the y-direction are equal to each other.

[0126] In this embodiment, such as Figure 8 , Figure 13 As shown, each of the first openings 514 overlaps with the gap between the first conductive part 32A and the second conductive part 32B when viewed from above. The plurality of first openings 514 are formed in order to facilitate the flow of the resin material between the upper side (z1 side in the z direction) and the lower side (z2 side in the z direction) near the main part 51 (first conductive member 5) when injecting a fluid resin material to form the sealing resin 8.

[0127] like Figure 8 As shown, a plurality of first junctions 52 and a plurality of second junctions 53 are respectively connected to the main portion 51 and are configured corresponding to a plurality of first semiconductor elements 10A. Specifically, each first junction 52 is located on the x1 side in the x-direction relative to the main portion 51. Each second junction 53 is located on the x2 side in the x-direction relative to the main portion 51. Figure 14 As shown, each first bonding portion 52 and the corresponding second main surface electrode 12 of any first semiconductor element 10A are bonded via a conductive bonding material 59. Each second bonding portion 53 is bonded to the second conductive portion 32B via the conductive bonding material 59. The material of the conductive bonding material 59 is not particularly limited, and may be, for example, solder, metal paste, or sintered metal. In this embodiment, the first bonding portion 52 has two portions spaced apart in the y-direction. These two portions are bonded to the second main surface electrode 12 on both sides in the y-direction, separated by the gate finger 121 of the second main surface electrode 12 of the first semiconductor element 10A.

[0128] The second conducting component 6 connects the second main surface electrode 12 (source electrode) of each second semiconductor element 10B to the first terminal 41 and the second terminal 42. The second conducting component 6 is integrally formed with the first terminal 41 and the second terminal 42. The second conducting component 6 constitutes the path of the main circuit current switched by the plurality of second semiconductor elements 10B. Figures 5-7 , Figure 12 , Figure 13 as well as Figures 18-22As shown, the second conductive member 6 includes a plurality of third connecting portions 61, a first path portion 64, a second path portion 65, a plurality of third path portions 66, and a fourth path portion 67. Additionally, in the illustrated example, the second conductive member 6 includes a first step portion 602 and a second step portion 603.

[0129] Each third bonding portion 61 is a portion individually bonded to one of the second semiconductor elements 10B. Each third bonding portion 61 is bonded to the second main electrode 12 of each second semiconductor element 10B via a conductive bonding material 69. The material of the conductive bonding material 69 is not particularly limited, and may be, for example, solder, metal paste, or sintered metal. In this embodiment, the third bonding portion 61 has two flat portions 611 and two first inclined portions 612.

[0130] Two flat portions 611 are arranged in the y-direction. The two flat portions 611 are spaced apart from each other in the y-direction. The shape of the flat portions 611 is not limited, but is rectangular in the illustrated example. The two flat portions are connected to the second main surface electrode 12 on both sides of the second main surface electrode 12 in the y-direction, separated by the gate finger 121 of the second main surface electrode 12 of the second semiconductor element 10B.

[0131] Two first inclined portions 612 are connected to the outer sides of two flat portions 611 in the y-direction. That is, the first inclined portion 612 located on the y1 side in the y-direction is connected to the flat portion 611 located on the y1 side in the y-direction with respect to the flat portion 611 located on the y1 side in the y-direction. In addition, the first inclined portion 612 located on the y2 side in the y-direction is connected to the flat portion 611 located on the y2 side in the y-direction with respect to the flat portion 611 located on the y2 side in the y-direction. The first inclined portion 612 is inclined in such a way that the further away from the flat portion 611 in the y-direction, the more it is located on the z1 side in the z-direction.

[0132] The first path portion 64 is located between the plurality of third joint portions 61 and the first terminal 41. In the illustrated example, the first path portion 64 is connected to the first terminal 41 via a first step portion 602. The first path portion 64 overlaps with the first conductive portion 32A when viewed from above. The first path portion 64 is a shape that extends integrally in the x-direction.

[0133] The first path portion 64 includes a first strip-shaped portion 641 and a first protrusion 643. The first strip-shaped portion 641 is located on the X2 side in the x direction relative to the first terminal 41 and is substantially parallel to the first main surface 301A. The first strip-shaped portion 641 is a shape that extends integrally in the x direction. In the illustrated example, the first strip-shaped portion 641 has a recess 649. The recess 649 is a portion of the first strip-shaped portion 641 that is recessed towards the y1 side in the y direction. Figure 5 , Figure 7 In the middle, the first conductive part 32A is presented through the recess 649.

[0134] The first protrusion 643 extends from the side end of the first strip-shaped portion 641 in the y-direction y1 side toward the z-direction z2 side. The first protrusion 643 is spaced apart from the first conductive portion 32A. In the illustrated example, the first protrusion 643 has a shape along the z-direction, which is a long rectangle with the x-direction as its length direction. Alternatively, the first path portion 64 may also have a structure without the first protrusion 643.

[0135] The second path portion 65 is located between the plurality of third joint portions 61 and the second terminal 42. In the illustrated example, the second path portion 65 is connected to the second terminal 42 via a second step portion 603. The second path portion 65 overlaps with the first conductive portion 32A when viewed from above. The second path portion 65 is a shape that extends integrally in the x-direction.

[0136] The second path portion 65 includes a second strip-shaped portion 651 and a second protruding portion 653. The second strip-shaped portion 651 is located on the x2 side of the x-direction relative to the second terminal 42 and is substantially parallel to the first main surface 301A. The second strip-shaped portion 651 is a shape that extends integrally in the x-direction. In the illustrated example, the second strip-shaped portion 651 has a recess 659. The recess 659 is a portion of the second strip-shaped portion 651 that is recessed towards the y2 side of the y-direction. Figure 5 , Figure 7 In the middle, the first conductive part 32A is presented through the recess 659.

[0137] The second protrusion 653 extends from the y2 side end of the second strip-shaped portion 651 in the y direction toward the z2 side in the z direction. The second protrusion 653 is spaced apart from the first conductive portion 32A. The second protrusion 653 is the same as the first protrusion 643, and has a shape along the z direction, which is a long rectangle with the x direction as its length direction. Alternatively, the second path portion 65 may also have a structure without the second protrusion 653.

[0138] Multiple third path portions 66 are individually connected to multiple third junction portions 61. Each third path portion 66 is shaped to extend in the x-direction and is arranged at intervals in the y-direction. The number of the multiple third path portions 66 is not limited; in the illustrated example, five third path portions 66 are arranged. Each third path portion 66 is arranged in the y-direction between the multiple second semiconductor elements 10B, or located on the outer side in the y-direction beyond the multiple second semiconductor elements 10B.

[0139] Recesses 669 are formed in the two outermost third path portions 66 located in the y-direction. The recesses 669 are recessed from the inner side to the outer side in the y-direction. In the illustrated example, one recess 669 is formed in each of the two third path portions 66. Figure 5 , Figure 7 In this process, the second conductive part 32B is presented through these recesses 669.

[0140] In this embodiment, a third joint 61 is disposed between two adjacent third path portions 66 in the y-direction. In one third joint 61, a first inclined portion 612 located on the y1 side in the y-direction is connected to the third path portion 66 located on the y1 side of one of the two adjacent third path portions 66 in the y-direction. In one third joint 61, a first inclined portion 612 located on the y2 side in the y-direction is connected to the third path portion 66 located on the y2 side of one of the two adjacent third path portions 66 in the y-direction.

[0141] The fourth path portion 67 is connected to the x1-side ends of the plurality of third path portions 66 in the x-direction. The fourth path portion 67 is a shape that extends longer in the y-direction. The fourth path portion 67 is connected to the x2-side ends of the first strip portion 641 of the first path portion 64 and the second strip portion 651 of the second path portion 65 in the x-direction. In the illustrated example, the first path portion 64 is connected to the y1-side end of the fourth path portion 67 in the y-direction. In addition, the second path portion 65 is connected to the y2-side end of the fourth path portion 67 in the y-direction.

[0142] The sealing resin 8 covers a plurality of first semiconductor elements 10A, a plurality of second semiconductor elements 10B, a support substrate 3 (except for the back surface 302), a portion of each of the first terminal 41, the second terminal 42, a plurality of third terminals 43, and the fourth terminal 44, a portion of each of the plurality of control terminals 45, a control terminal support 48, a first conductive member 5, a second conductive member 6, and a plurality of metal wires 71 to 74. The sealing resin 8 is, for example, made of black epoxy resin. The sealing resin 8 is formed, for example, by molding. The sealing resin 8 has a dimension of approximately 35 mm to 60 mm in the x-direction, approximately 35 mm to 50 mm in the y-direction, and approximately 4 mm to 15 mm in the z-direction. These dimensions are the sizes of the largest portions along each direction. The sealing resin 8 has a resin main surface 81, a resin back surface 82, and a plurality of resin side surfaces 831 to 834.

[0143] like Figure 10 , Figure 12 as well as Figure 20 As shown, the resin main surface 81 and the resin back surface 82 are spaced apart in the z-direction. The resin main surface 81 faces the z1 side in the z-direction, and the resin back surface 82 faces the z2 side in the z-direction. Multiple control terminals 45 (multiple first control terminals 46A-46E and multiple second control terminals 47A-47D) protrude from the resin main surface 81. Figure 11As shown, the resin back surface 82 is a frame-like structure that surrounds the back surface 302 (the lower surface of the back metal layer 33) of the support substrate 3 when viewed from above. The back surface 302 of the support substrate 3 protrudes from the resin back surface 82, for example, being on the same side as the resin back surface 82. Multiple resin side surfaces 831-834 are respectively connected to both the resin main surface 81 and the resin back surface 82, and are sandwiched between them in the z-direction. Figure 4 As shown, resin side surface 831 and resin side surface 832 are spaced apart in the x-direction. Resin side surface 831 faces the x2 side in the x-direction, and resin side surface 832 faces the x1 side in the x-direction. Two third terminals 43 protrude from resin side surface 831, and first terminal 41, second terminal 42, and fourth terminal 44 protrude from resin side surface 832. Figure 4 As shown, resin side surface 833 and resin side surface 834 are spaced apart in the y direction. Resin side surface 833 faces the y2 side in the y direction, and resin side surface 834 faces the y1 side in the y direction.

[0144] In this embodiment, such as Figure 1 , Figure 4 , Figure 13 , Figure 22 As shown, a plurality of first recesses 810 are formed on the resin main surface 81. The plurality of first recesses 810 are recessed from the resin main surface 81 toward the z2 side in the z direction. The plurality of first recesses 810 are respectively provided with a plurality of control terminals 45.

[0145] like Figure 16 , Figure 17 As shown, the first recess 810 completely overlaps with the cylindrical portion 453 of the support 451 when viewed from above. In the illustrated example, the first recess 810 has an inner recess surface 811 and a bottom recess surface 812. The inner recess surface 811 is connected to the resin main surface 81 and extends towards the z2 side in the z direction. In the illustrated example, the cross-section of the inner recess surface 811 orthogonal to the z direction is circular. The bottom recess surface 812 is connected to the end of the inner recess surface 811 on the z2 side in the z direction and is a plane facing the z1 side in the z direction.

[0146] When viewed from above, the bottom surface 812 of the recess surrounds the first surface 454a of the bracket 451 (first convex edge 454). Furthermore, the first surface 454a and the bottom surface 812 of the recess are the same surface. This first recess 810 is formed, for example, by molding, a mark of sealing resin 8 formed while the upper end (first convex edge 454) of the bracket 451 is pushed by a pin or the like with a shape corresponding to the first recess 810. Thus, the first recess 810 is a mark formed during molding, and the same applies to the first recess 810 in the various modified examples described later. The first convex edge 454 is located on the z2 side in the z direction relative to the resin main surface 81. Figure 16As shown, the entire first outer surface 453a of the cylindrical portion 453 and the second surface 454b of the first protruding edge 454 are in contact with the sealing resin 8. On the other hand, the first inner surface 453b of the cylindrical portion 453 and the first surface 454a of the first protruding edge 454 are exposed from the sealing resin 8. Figure 16 , Figure 17 In the example shown, the first recess 810 completely overlaps with the first convex edge 454 when viewed from the z-direction. As a result, the diameter (maximum value of the inner diameter) of the first recess 810 is larger than the outer diameter of the first convex edge 454.

[0147] The first surface 454a, which has the same planar shape as the bottom surface 812 of the recess, is located at a different position in the z-direction from the resin main surface 81. Specifically, the first surface 454a is located on the z2 side in the z-direction relative to the resin main surface 81. In this embodiment, the distance in the z-direction between the resin main surface 81 and the first surface 454a, i.e., the first dimension L1, is smaller than the length in the z-direction of the bracket 451, i.e., the second dimension L2. Preferably, the ratio of the distance in the z-direction between the resin main surface 81 and the first surface 454a (the first dimension L1) to the length in the z-direction of the bracket 451 (the second dimension L2) is 1 / 3 or more.

[0148] In addition, Figure 16 , Figure 17 In the example shown, the inner surface 811 of the recess is formed into a cylindrical shape, but a draft angle can also be provided during molding. When the inner surface 811 of the recess has a draft angle, the inner surface 811 of the recess is formed into a conical shape that slopes towards the z2 side in the z direction, with the inner diameter decreasing accordingly. The angle of the draft angle of the inner surface 811 of the recess is appropriately set, for example, within the range of 0 to 30°. In addition, when the inner surface 811 of the recess is inclined in a conical shape, if the inclination angle is relatively large, the inner diameter of the lower end of the inner surface 811 of the recess (the end on the z2 side in the z direction) will be smaller than the outer diameter of the first convex edge 454. In this case, the bottom surface 812 of the recess described above is not formed. The lower end of the inner surface 811 of the recess is connected to the first surface 454a, becoming the end edge of the recess.

[0149] like Figure 4 As shown, a plurality of recesses 832a are formed on the resin side surface 832. Each recess 832a is a portion that is recessed along the x-direction when viewed from above. The plurality of recesses 832a have portions formed between the first terminal 41 and the fourth terminal 44 when viewed from above, and portions formed between the second terminal 42 and the fourth terminal 44. The plurality of recesses 832a are provided to increase the surface distance between the first terminal 41 and the fourth terminal 44 along the resin side surface 832, and the surface distance between the second terminal 42 and the fourth terminal 44 along the resin side surface 832.

[0150] like Figure 1 , Figure 12 as well as Figure 13 As shown, the sealing resin 8 has a plurality of protrusions 851. Each of the plurality of protrusions 851 protrudes from the resin main surface 81 toward the z1 side in the z direction. When viewed from above, the plurality of protrusions 851 are arranged near the four corners of the sealing resin 8. A protruding end face 851a is formed at the front end (the z1 side end in the z direction) of each of the plurality of protrusions 851. Each protruding end face 851a of the plurality of protrusions 851 is parallel (or substantially parallel) to the resin main surface 81 and lies on the same plane (x-y plane). Each protrusion 851 is, for example, a hollow truncated cone shape with a bottom. In a device utilizing power generated by a semiconductor device A1, when the semiconductor device A1 is mounted on a control circuit board or the like in the device, the plurality of protrusions 851 are used as spacers. Each of the plurality of protrusions 851 has a recess 851b and an inner wall surface 851c formed in the recess 851b. The shape of each protrusion 851 can be columnar, preferably cylindrical. The recess 851b is cylindrical in shape, and preferably, when viewed from above, the inner wall surface 851c is a single perfect circle.

[0151] Semiconductor device A1 may be mechanically fixed relative to a control circuit board or the like using a threaded fixing method. In this case, internal thread teeth can be formed on the inner wall surface 851c of the recess 851b in the plurality of protrusions 851. An embedded nut may also be inserted into the recess 851b in the plurality of protrusions 851.

[0152] Next, the function of this embodiment will be explained.

[0153] The support 451 constituting each control terminal 45 has a first surface 454a and a first outer surface 453a. The first surface 454a is located at the end of the support 451 on the z1 side in the z direction. The first surface 454a is located at a different position from the resin main surface 81 in the z direction. The first outer surface 453a extends in the z direction and is in contact with the sealing resin 8. The metal pin 452 constituting each control terminal 45 protrudes further in the z1 side in the z direction than the resin main surface 81. According to this structure, a plurality of control terminals 45 are arranged in an area surrounded by the resin main surface 81 (sealing resin 8) when viewed from above. Such a semiconductor device A1 can achieve miniaturization when viewed from above. In addition, the first surface 454a is located at a different position from the resin main surface 81 in the z direction. According to this structure, the surface distance along the surface of the sealing resin 8 (resin main surface 81, etc.) can be increased among adjacent control terminals 45. Therefore, the semiconductor device A1 is suitable for achieving miniaturization when viewed from above while improving the voltage withstand capability of adjacent control terminals 45.

[0154] The support 451 includes a cylindrical portion 453 extending in the z-direction and a first protruding edge 454 connected to the end of the cylindrical portion 453 on the z1 side in the z-direction. The first protruding edge 454 has a first surface 454a facing the z1 side in the z-direction. The sealing resin 8 has a first recess 810. The first recess 810 is recessed from the resin main surface 81 toward the z1 side in the z-direction. The first protruding edge 454 is located on the z2 side in the z-direction relative to the resin main surface 81. According to the structure of the sealing resin 8 having the first recess 810 described above, the first surface 454a (first protruding edge 454) can be appropriately positioned in the z-direction at a different position from the resin main surface 81.

[0155] Furthermore, the first recess 810 completely overlaps with the cylindrical portion 453 when viewed from above (in the z-direction). As a result, when the metal pin 452 is pressed into the bracket 451, the lower end of the metal pin 452 can enter the first recess 810 and be inserted into the bracket 451 (cylindrical portion 453) at the same time, which provides excellent workability during the pressing process.

[0156] The first recess 810 has an inner recess surface 811 and a bottom recess surface 812. The bottom recess surface 812 faces the z1 side in the z direction and surrounds the first surface 454a when viewed in the z direction. Furthermore, the entire first surface 454a is exposed from the sealing resin 8. With this structure, the first surface 454a (first convex edge 454) surrounded by the bottom recess surface 812 has excellent visual recognizability when viewed from above. This further improves the workability of pressing the metal pin 452 into the bracket 451. Additionally, based on the structure where the bottom recess surface 812 of the first recess 810 surrounds the first surface 454a (first convex edge 454) when viewed from above, the surface distance along the surface of the sealing resin 8 can be further increased in adjacent control terminals 45. This is more preferable in terms of improving the voltage withstand capability of adjacent control terminals 45.

[0157] The distance (first dimension L1) between the resin main surface 81 and the first surface 454a in the z-direction is smaller than the length (second dimension L2) of the bracket 451 in the z-direction. The ratio of the distance (first dimension L1) between the resin main surface 81 and the first surface 454a in the z-direction to the length (second dimension L2) of the bracket 451 in the z-direction is, for example, 50% or more. With this structure, it is possible to avoid an increase in the dimension of the sealing resin 8 in the z-direction, and in adjacent control terminals 45, it is possible to increase the surface distance along the surface of the sealing resin 8.

[0158] First variation of the first embodiment (first scheme):

[0159] Figure 23 A semiconductor device representing a first variation of the first embodiment. Figure 23This is an enlarged cross-sectional view showing the main part of the semiconductor device A11 in this modified example, and is related to... Figure 16 The same sectional view. Furthermore, in Figures 23-29 In the accompanying drawings, elements that are the same as or similar to the semiconductor device A1 in the above embodiment are labeled with the same symbols as in the above embodiment, and descriptions are appropriately omitted. Furthermore, Figures 23-29 The structures of the various modifications and components in each embodiment can be appropriately combined with each other without creating technical contradictions.

[0160] In this modified example of the semiconductor device A11, the structure of the first recess 810 differs from that of the semiconductor device A1 in the above embodiment. In the semiconductor device A11, the first recess 810 has a recessed end edge 813 and a cylindrical inner surface 814. The cylindrical inner surface 814 is cylindrical, extending from the resin main surface 81 towards the z2 side in the z direction. The recessed end edge 813 is located at the lower end (the end on the z2 side in the z direction) of the cylindrical inner surface 814. The recessed end edge 813 is in contact with the first surface 454a. In this modified example, the recessed end edge 813 is in contact with the radially midpoint of the first surface 454a. A portion of the first surface 454a is covered by the sealing resin 8 on its radially outward side, while the remaining portion on its radially inward side is exposed from the sealing resin 8. The outer periphery of the first convex edge 454 surrounds the first recess 810 when viewed from above. Therefore, the diameter (maximum inner diameter) of the first recess 810 is smaller than the outer diameter of the first convex edge 454. Furthermore, in Figure 23 In the example shown, the cylindrical inner surface 814 is formed into a cylindrical shape, but a draft angle may also be provided on the cylindrical inner surface 814. When the cylindrical inner surface 814 is provided with a draft angle, the cylindrical inner surface 814 is formed into a conical shape that is inclined such that the inner diameter decreases as it moves toward the z2 side in the z direction.

[0161] In the semiconductor device A11 of this modified example, the support 451 constituting each control terminal 45 has a first surface 454a and a first outer surface 453a. The first surface 454a is located at the end of the support 451 on the z1 side in the z direction. The first surface 454a is located at a different position from the resin main surface 81 in the z direction. The first outer surface 453a extends in the z direction and is in contact with the sealing resin 8. The metal pin 452 constituting each control terminal 45 protrudes further in the z1 side in the z direction than the resin main surface 81. According to this structure, a plurality of control terminals 45 are arranged in an area surrounded by the resin main surface 81 (sealing resin 8) when viewed from above. Such a semiconductor device A11 can achieve miniaturization when viewed from above. In addition, the first surface 454a is located at a different position from the resin main surface 81 in the z direction. According to this structure, the surface distance along the surface of the sealing resin 8 (resin main surface 81, etc.) can be increased among adjacent control terminals 45. Therefore, the semiconductor device A11 is suitable for miniaturization when viewed from above, while simultaneously improving the voltage withstand capability of the adjacent control terminals 45. Furthermore, within the same structural range as the semiconductor device A1 of the above embodiment, it achieves the same functional effects as the above embodiment.

[0162] A second variation of the first embodiment (first scheme):

[0163] Figure 24 A semiconductor device representing a second variation of the first embodiment. Figure 24 An enlarged cross-sectional view showing the main part of the semiconductor device A12 in this modified example is shown. Figure 16 Same cross-sectional view. In the semiconductor device A12 of this modified example, the structure of the first recess 810 is different from that of the semiconductor device A1 of the above embodiment.

[0164] The first recess 810 has a recessed end edge 813, a cylindrical inner surface 814, and a conical inner surface 815. The cylindrical inner surface 814 is cylindrical, extending from the resin main surface 81 towards the z2 side in the z direction. The conical inner surface 815 is connected to the lower end (the z2 side end in the z direction) of the cylindrical inner surface 814. The recessed end edge 813 is located at the lower end (the z2 side end in the z direction) of the conical inner surface 815. The conical inner surface 815 is inclined such that its inner diameter increases as it moves towards the z1 side in the z direction. The recessed end edge 813 is in contact with the first surface 454a. In this modified example, the recessed end edge 813 is in contact with the radially midpoint of the first surface 454a. A portion of the first surface 454a radially outward is covered by the sealing resin 8, while the remaining portion radially inward is exposed from the sealing resin 8. The outer periphery of the first convex edge 454 surrounds the first concave part 810 when viewed from above.

[0165] In the semiconductor device A12 of this modified example, the support 451 constituting each control terminal 45 has a first surface 454a and a first outer surface 453a. The first surface 454a is located at the end of the support 451 on the z1 side in the z direction. The first surface 454a is located at a different position from the resin main surface 81 in the z direction. The first outer surface 453a extends in the z direction and is in contact with the sealing resin 8. The metal pin 452 constituting each control terminal 45 protrudes further in the z1 side in the z direction than the resin main surface 81. According to this structure, a plurality of control terminals 45 are arranged in an area surrounded by the resin main surface 81 (sealing resin 8) when viewed from above. Such a semiconductor device A12 can achieve miniaturization when viewed from above. In addition, the first surface 454a is located at a different position from the resin main surface 81 in the z direction. According to this structure, the surface distance along the surface of the sealing resin 8 (resin main surface 81, etc.) can be increased among adjacent control terminals 45. Therefore, the semiconductor device A12 is suitable for miniaturization when viewed from above, while improving the voltage withstand capability of the adjacent control terminal 45.

[0166] In the first recess 810, the recessed end edge 813 on the z2 side in the z direction is in contact with the first surface 454a of the first convex edge 454. Furthermore, the first recess 810 has a tapered inner surface 815 connected to the recessed end edge 813, the inner diameter of which is larger as it faces the z1 side in the z direction. With this structure, when the metal pin 452 is pressed into the bracket 451, the metal pin 452 entering the first recess 810 can be guided towards the bracket 451 (cylindrical portion 453) while being guided by the tapered inner surface 815. Therefore, the workability of pressing the metal pin 452 into the bracket 451 is improved. In addition, within the same structural range as the semiconductor device A1 of the above embodiment, it achieves the same effects as the above embodiment.

[0167] Third variation of the first embodiment (first scheme):

[0168] Figure 25 The semiconductor device represents a third variation of the first embodiment. Figure 25 This is an enlarged cross-sectional view showing the main part of the semiconductor device A13 in this modified example, and is related to... Figure 16 Same cross-sectional view. In the semiconductor device A13 of this modified example, the structure of the first recess 810 is different from that of the semiconductor device A1 of the above embodiment.

[0169] The first recess 810 has a recessed end edge 813, a cylindrical inner surface 814, and a conical inner surface 815. In this modified example, the longitudinal cross-sectional shapes of the cylindrical inner surface 814 and the conical inner surface 815 are similar to... Figure 24The semiconductor device A12 shown is the same. On the other hand, in this modified example, the recessed end edge 813 is connected to the radially inward end of the first surface 454a. Thus, the entire (or substantially all) of the first surface 454a is covered by the sealing resin 8. The outer periphery of the first convex edge 454 surrounds the first recess 810 when viewed from above.

[0170] In the semiconductor device A13 of this modified example, the support 451 constituting each control terminal 45 has a first surface 454a and a first outer surface 453a. The first surface 454a is located at the end of the support 451 on the z1 side in the z direction. The first surface 454a is located at a different position from the resin main surface 81 in the z direction. The first outer surface 453a extends in the z direction and is in contact with the sealing resin 8. The metal pin 452 constituting each control terminal 45 protrudes further in the z1 side in the z direction than the resin main surface 81. With this structure, a plurality of control terminals 45 are arranged in an area surrounded by the resin main surface 81 (sealing resin 8) when viewed from above. Such a semiconductor device A13 can achieve miniaturization when viewed from above. In addition, the first surface 454a is located at a different position from the resin main surface 81 in the z direction. With this structure, the surface distance along the surface of the sealing resin 8 (resin main surface 81, etc.) can be increased among adjacent control terminals 45. Therefore, the semiconductor device A13 is suitable for miniaturization when viewed from above, while improving the voltage withstand capability of the adjacent control terminal 45.

[0171] In the first recess 810, the recessed end edge 813 on the z2 side in the z direction is in contact with the first surface 454a of the first convex side 454. The first recess 810 has a tapered inner surface 815 connected to the recessed end edge 813, and the inner diameter of the tapered inner surface 815 is larger as it faces the z1 side in the z direction. With this structure, when the metal pin 452 is pressed into the bracket 451, the metal pin 452 entering the first recess 810 can be guided towards the bracket 451 (cylindrical portion 453) while being guided by the tapered inner surface 815. In addition, in this modified example, the recessed end edge 813 is in contact with the radially inward end of the first surface 454a. Thus, when the metal pin 452 is pressed into the bracket 451, the metal pin 452 entering the first recess 810 can be reliably directed towards the bracket 451 (cylindrical portion 453). Therefore, the workability of pressing the metal pin 452 into the bracket 451 is further improved. In addition, within the same structural range as the semiconductor device A1 in the above embodiment, it performs the same function and effect as in the above embodiment.

[0172] Fourth variation of the first embodiment (first scheme):

[0173] Figure 26 The semiconductor device represents a fourth variation of the first embodiment. Figure 26This is an enlarged cross-sectional view showing the main part of the semiconductor device A14 in this modified example, and is related to... Figure 16 Same cross-sectional view. In the semiconductor device A14 of this modified example, the structure of the first recess 810 is different from that of the semiconductor device A1 of the above embodiment.

[0174] The first recess 810 has an inner surface 811 and a bottom surface 812. Figure 26 In the example shown, the inner surface 811 of the recess is formed into a conical shape that slopes downwards towards the z2 side in the z direction, with the inner diameter decreasing accordingly. The bottom surface 812 of the recess connects to the end of the inner surface 811 on the z2 side in the z direction and is a plane facing the z1 side in the z direction. The bottom surface 812 of the recess surrounds the first surface 454a of the support 451 (first convex edge 454) when viewed from above. In this modified example, the bottom surface 812 of the recess is located on the z2 side in the z direction, closer to the first surface 454a. Therefore, the first surface 454a and the bottom surface 812 of the recess are not the same surface and are positioned differently in the z direction. Furthermore, in... Figure 26 In the example shown, the outer periphery of the first convex edge 454 is exposed from the sealing resin 8.

[0175] In the semiconductor device A14 of this modified example, the support 451 constituting each control terminal 45 has a first surface 454a and a first outer surface 453a. The first surface 454a is located at the end of the support 451 on the z1 side in the z direction. The first surface 454a is located at a different position from the resin main surface 81 in the z direction. The first outer surface 453a extends in the z direction and is in contact with the sealing resin 8. The metal pin 452 constituting each control terminal 45 protrudes further in the z1 side in the z direction than the resin main surface 81. According to this structure, a plurality of control terminals 45 are arranged in an area surrounded by the resin main surface 81 (sealing resin 8) when viewed from above. Such a semiconductor device A14 can achieve miniaturization when viewed from above. In addition, the first surface 454a is located at a different position from the resin main surface 81 in the z direction. According to this structure, the surface distance along the surface of the sealing resin 8 (resin main surface 81, etc.) can be increased among adjacent control terminals 45. Therefore, the semiconductor device A14 is suitable for miniaturization when viewed from above, while simultaneously improving the voltage withstand capability of the adjacent control terminal 45. Furthermore, within the same structural range as the semiconductor device A1 of the above embodiment, it achieves the same functional effects as the above embodiment.

[0176] Fifth variation of the first embodiment (first scheme):

[0177] Figure 27 The semiconductor device represents a fifth variation of the first embodiment. Figure 27 This is an enlarged cross-sectional view showing the main part of the semiconductor device A15 in this modified example, and is related to... Figure 16Same cross-sectional view. The semiconductor device A15 in this modified example also includes a first resin filling portion 89.

[0178] In this variation, the first resin filling portion 89 fills the first recess 810 by burying it. The first resin filling portion 89 is made of epoxy resin, for example, the same as the sealing resin 8, but it can also be a different material. According to this variation, it is possible to prevent foreign matter (including moisture) from intruding into the first recess 810 exposed from the sealing resin 8. The semiconductor device A15 with the above structure is preferred in terms of improved durability and reliability. Furthermore, the semiconductor device A15 also performs the same function as the semiconductor device A1 of the above embodiment.

[0179] Second implementation method (first scheme):

[0180] Figure 28 as well as Figure 29 This refers to a semiconductor device according to a second embodiment of the present disclosure. Figure 28 This is a perspective view of the semiconductor device A2 according to this embodiment. Figure 29 This is an enlarged cross-sectional view showing the main part of semiconductor device A2, and is related to... Figure 16 Same cross-sectional view. In the semiconductor device A2 of this embodiment, the sealing resin 8 does not have the first recess 810 described above. On the other hand, the semiconductor device A2 has a plurality of first protrusions 852.

[0181] Multiple first protrusions 852 protrude from the resin main surface 81 toward the z1 side in the z direction. The multiple protrusions 851 are respectively provided corresponding to multiple control terminals 45, overlapping with the multiple control terminals 45 when viewed from above. Each metal pin 452 of the multiple control terminals 45 protrudes from the first protrusion 852. The first protrusion 852 is cylindrical. The first protrusion 852 covers a portion of the support 451 in each control terminal 45. Figure 29 As shown, the entire first outer surface 453a of the cylindrical portion 453 and the entire second surface 454b of the first protruding edge portion 454 in the bracket 451 are in contact with the sealing resin 8. Specifically, a portion of the first outer surface 453a and the entire second surface 454b are in contact with the first protrusion 852. On the other hand, the first surface 454a of the first protruding edge portion 454 is exposed from the sealing resin 8.

[0182] The first protrusion 852 has a top surface 852a. When viewed from above, the top surface 852a surrounds the first surface 454a of the support 451 (first protruding edge 454). Furthermore, the first surface 454a and the top surface 852a are of the same plane. The top surface 852a and the first surface 454a are located in a different position in the z-direction from the resin main surface 81. Specifically, the first surface 454a is located on the z1 side in the z-direction relative to the resin main surface 81.

[0183] Next, the function of this embodiment will be explained.

[0184] In the semiconductor device A2 of this modified example, the support 451 constituting each control terminal 45 has a first surface 454a and a first outer surface 453a. The first surface 454a is located at the end of the support 451 on the z1 side in the z direction. The first surface 454a is located at a different position from the resin main surface 81 in the z direction. The first outer surface 453a extends in the z direction and is in contact with the sealing resin 8. The metal pin 452 constituting each control terminal 45 protrudes further in the z1 side in the z direction than the resin main surface 81. With this structure, a plurality of control terminals 45 are arranged in an area surrounded by the resin main surface 81 (sealing resin 8) when viewed from above. Such a semiconductor device A2 can achieve miniaturization when viewed from above. In addition, the first surface 454a is located at a different position from the resin main surface 81 in the z direction. With this structure, the surface distance along the surface of the sealing resin 8 (resin main surface 81, etc.) can be increased among adjacent control terminals 45. Therefore, the semiconductor device A2 is suitable for miniaturization when viewed from above, while improving the voltage withstand capability of the adjacent control terminal 45.

[0185] The sealing resin 8 has a first protrusion 852. The first protrusion 852 protrudes from the resin main surface 81 toward the z1 side in the z direction. The first convex edge 454 is located on the z1 side in the z direction relative to the resin main surface 81. According to the structure of the sealing resin 8 having the first protrusion 852 described above, the first surface 454a (first convex edge 454) can be appropriately positioned in the z direction at a different position from the resin main surface 81.

[0186] The semiconductor device of the first aspect disclosed herein is not limited to the embodiments described above. The specific structure of each part of the semiconductor device can be freely modified in various ways.

[0187] The first aspect of this disclosure includes the embodiments described in the following notes 1 to 16.

[0188] Postscript 1.

[0189] A semiconductor device comprising:

[0190] At least one terminal includes a conductive cylindrical support and a metal pin inserted into the support.

[0191] Terminal support body, which supports the aforementioned bracket; and

[0192] A sealing resin is used to cover a portion of the aforementioned bracket and the aforementioned terminal support.

[0193] The aforementioned sealing resin has a resin main surface facing one side in the thickness direction.

[0194] The aforementioned bracket has a first surface located at one end in the aforementioned thickness direction and a first outer surface extending in the aforementioned thickness direction.

[0195] The first surface is located at a different position from the main resin surface in the thickness direction.

[0196] The aforementioned first outer surface is in contact with the aforementioned sealing resin.

[0197] The aforementioned metal pin protrudes further toward the side in the thickness direction than the aforementioned resin main surface.

[0198] Postscript 2.

[0199] According to the semiconductor device described in Appendix 1,

[0200] The aforementioned support includes a cylindrical portion extending in the aforementioned thickness direction and a first convex edge portion connected to one end of the cylindrical portion on one side of the aforementioned thickness direction.

[0201] The aforementioned first convex edge has a first surface facing one side of the thickness direction, and a second surface located on the other side of the thickness direction that is closer to the first surface and also facing the other side of the thickness direction.

[0202] The aforementioned cylindrical portion has the aforementioned first outer surface.

[0203] The entire first outer surface and the second surface are in contact with the sealing resin.

[0204] Appendix 3.

[0205] According to the semiconductor device described in Appendix 2,

[0206] The aforementioned sealing resin has a first recess, which is recessed from the resin main surface to the side opposite to the thickness direction.

[0207] The first convex edge is located on the opposite side of the thickness direction relative to the main resin surface.

[0208] When viewed in the thickness direction, the first recess completely overlaps with the cylindrical portion.

[0209] Appendix 4.

[0210] According to the semiconductor device described in Appendix 3,

[0211] At least a portion of the first surface is exposed from the sealing resin.

[0212] Appendix 5.

[0213] According to the semiconductor device described in Appendix 4,

[0214] The entire first surface described above is exposed from the aforementioned sealing resin.

[0215] The first recess has an inner recess surface that is connected to the resin main surface, and a bottom recess surface that is connected to the end of the inner recess surface on the other side of the thickness direction and faces the side of the thickness direction.

[0216] When viewed in the thickness direction, the bottom surface of the aforementioned concave portion surrounds the aforementioned first surface.

[0217] Postscript 6.

[0218] According to the semiconductor device described in Appendix 3,

[0219] The first recess has a recessed end edge, which is located on the other side of the thickness direction and is in contact with the first surface.

[0220] Postscript 7.

[0221] According to the semiconductor device described in Appendix 6,

[0222] The first recess has a tapered inner surface that connects to the end edge of the recess.

[0223] The aforementioned tapered inner surface is inclined such that the inner diameter increases as it faces one of the thickness directions.

[0224] Postscript 8.

[0225] According to the semiconductor device described in Appendix 6,

[0226] When viewed in the thickness direction, the outer periphery of the first convex edge surrounds the first concave portion.

[0227] Postscript 9.

[0228] According to any of the notes 3 to 8, the semiconductor device

[0229] The distance between the resin main surface and the first surface in the thickness direction, i.e., the first dimension, is smaller than the length of the bracket in the thickness direction, i.e., the second dimension.

[0230] Postscript 10.

[0231] According to the semiconductor device described in Appendix 9,

[0232] The ratio of the first dimension to the second dimension is more than 1 / 3.

[0233] Postscript 11.

[0234] According to the semiconductor device described in Appendix 3,

[0235] It also includes a first resin filling portion that fills the aforementioned first recess.

[0236] Postscript 12.

[0237] According to the semiconductor device described in Appendix 2,

[0238] The aforementioned sealing resin includes a first protrusion that protrudes from the resin substrate on one side of the thickness direction.

[0239] A portion of the first outer surface and the entirety of the second surface are in contact with the first protrusion.

[0240] Postscript 13.

[0241] According to the semiconductor device described in Appendix 12,

[0242] The aforementioned first protrusion has a protrusion top surface facing one side of the aforementioned thickness direction.

[0243] When viewed in the aforementioned thickness direction, the top surface of the aforementioned protrusion surrounds the aforementioned first surface.

[0244] The first surface mentioned above and the top surface of the protrusion mentioned above are the same surface.

[0245] Postscript 14.

[0246] The semiconductor device described in Appendix 1 or 2 also includes:

[0247] Support conductor, which supports the aforementioned terminal support body; and

[0248] At least one semiconductor element electrically connected to the at least one terminal mentioned above,

[0249] At least one of the aforementioned semiconductor elements is supported on the aforementioned support conductor.

[0250] Postscript 15.

[0251] According to the semiconductor device described in Appendix 14,

[0252] The aforementioned at least one terminal is a control terminal used to control the aforementioned at least one semiconductor element.

[0253] Postscript 16.

[0254] According to the semiconductor device described in Appendix 15,

[0255] The aforementioned support conductor includes a first conductive portion and a second conductive portion, which are spaced apart in a first direction orthogonal to the aforementioned thickness direction.

[0256] The aforementioned at least one semiconductor element includes a first switching element coupled to the first conductive portion and a second switching element coupled to the second conductive portion.

[0257] The aforementioned control terminals include a first control terminal for controlling the first switching element and a second control terminal for controlling the second switching element.

[0258] The terminal support includes a first support portion that supports the first control terminal and a second support portion that supports the second control terminal.

[0259] Next, refer to Figures 30-44 The semiconductor device according to the first embodiment of the second aspect of this disclosure will be described. The semiconductor device B1 of this embodiment includes a support substrate 11, a plurality of power terminals 13, a plurality of semiconductor elements 21, a thermistor 22, a first conductive member 31, a second conductive member 32, a plurality of metal wires, a plurality of control terminals 45, a control terminal support 48, and an encapsulating resin 50. The plurality of power terminals 13 includes a first power terminal 14, two second power terminals 15, and two third power terminals 16. The plurality of metal wires includes a plurality of first metal wires 41, a plurality of second metal wires 42, a plurality of third metal wires 43, and a fourth metal wire 44.

[0260] Figure 30 This is a three-dimensional diagram representing semiconductor device B1. Figure 31 This is a top view showing semiconductor device B1. Figure 32 This is a top view of semiconductor device B1, with the encapsulating resin 50 shown by imaginary lines. Figure 33 This is a top view showing semiconductor device B1, from... Figure 32 The top view omits the sealing resin 50 and the second conductive component 32. Figure 34 From Figure 33 The top view omits the first conductive component 31. Figure 35 This is a bottom view showing semiconductor device B1. Figure 36 It is along Figure 32 A sectional view of the XXXVI-XXXVI line. Figure 37 , Figure 38 It's enlarged. Figure 36 A partially enlarged sectional view. Figure 39 It is along Figure 32 A cross-sectional view of the XXXIX-XXXIX line. Figure 40 It is along Figure 32 A cross-sectional view of the XL-XL line. Figure 41 It is along Figure 32 A cross-sectional view of the XLI-XLI line. Figure 42 It is along Figure 32 A sectional view of the XLII-XLII line. Figure 43 It is along Figure 32 A cross-sectional view of the XLIII-XLIII line. Figure 44 It's enlarged. Figure 40 A partially enlarged sectional view.

[0261] In the following description, reference is made to the mutually orthogonal thickness direction z, the first direction x, and the second direction y. The thickness direction z corresponds to the thickness direction of semiconductor device B1. Furthermore, "top view" refers to viewing the device along the thickness direction z. The first direction x is orthogonal to the thickness direction z. The second direction y is orthogonal to both the thickness direction z and the first direction x.

[0262] Semiconductor device B1 converts the DC power supply voltage applied to the first power terminal 14 and two second power terminals 15 into AC power through multiple semiconductor elements 21. The converted AC power is then input to power supply objects such as motors through two third power terminals 16.

[0263] like Figure 34 , Figures 36-39 , Figure 41 as well as Figure 42 As shown, the support substrate 11 supports multiple semiconductor elements 21 in the thickness direction z. The support substrate 11 is, for example, constructed of a DBC (Direct Bonded Copper) substrate. Figures 33-43 As shown, the support substrate 11 includes an insulating layer 111, a support conductor 112, and a back metal layer 113. Figures 35-43 As shown, the support substrate 11 is covered by sealing resin 50 except for a portion of the back metal layer 113.

[0264] like Figures 36-43 As shown, the insulating layer 111 includes a portion in the thickness direction z between the supporting conductor 112 and the back metal layer 113. The insulating layer 111 is made of a material with relatively high thermal conductivity. For example, the insulating layer 111 is made of ceramic containing aluminum nitride (AlN). In addition to ceramic, the insulating layer 111 can also be a structure made of insulating resin sheet.

[0265] like Figure 33 , Figure 34 as well as Figures 36-43As shown, the support conductor 112 is located above the insulating layer 111 (z1 side) in the thickness direction z. The support conductor 112 is composed of copper (Cu). Figure 42 as well as Figure 43 As shown, the supporting conductor 112 is surrounded by the periphery of the insulating layer 111 when viewed from above. Figures 36-43 As shown, the supporting conductor 112 has a main surface 1120. The main surface 1120 is a plane facing the z1 side in the thickness direction z. Figure 33 , Figure 34 as well as Figures 36-43 As shown, the support conductor 112 includes a first conductive portion 1121 and a second conductive portion 1122. Both the first conductive portion 1121 and the second conductive portion 1122 are rectangular in shape when viewed from above. The first conductive portion 1121 and the second conductive portion 1122 are separated from each other in a first direction x. The first conductive portion 1121 is located on the x1 side of the first direction x relative to the second conductive portion 1122. A plurality of semiconductor elements 21 are respectively bonded to either the first conductive portion 1121 or the second conductive portion 1122.

[0266] like Figures 36-43 As shown, the back metal layer 113 is located below the insulating layer 111 (on the z2 side) in the thickness direction z. Figure 35 As shown, the back metal layer 113 is exposed from the sealing resin 50. A heat dissipation component (e.g., a heat sink) can be mounted on the lower surface of the back metal layer 113 (the surface facing the z2 side). The back metal layer 113 is composed of copper. The back metal layer 113 is rectangular in shape when viewed from above. The back metal layer 113 is surrounded by the periphery of the insulating layer 111 when viewed from above.

[0267] like Figure 34 as well as Figures 36-39 As shown, multiple semiconductor elements 21 are respectively mounted on either the first conductive portion 1121 or the second conductive portion 1122. Each semiconductor element 21 is, for example, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). Alternatively, each semiconductor element 21 may be a switching element such as an IGBT (Insulated Gate Bipolar Transistor) or a diode. In the description of semiconductor device B1, the semiconductor element 21 is an n-channel type, and a vertically oriented MOSFET is taken as an example. The semiconductor element 21 includes a compound semiconductor substrate. The composition of this compound semiconductor substrate includes silicon carbide (SiC) or silicon (Si).

[0268] like Figure 34 as well as Figures 36-39As shown, in semiconductor device B1, a plurality of semiconductor elements 21 include a plurality of first elements 21A and a plurality of second elements 21B. The structure of each of the plurality of second elements 21B is the same as that of each of the plurality of first elements 21A. The plurality of first elements 21A are mounted on a first conductive portion 1121. The plurality of first elements 21A are arranged along a second direction y. The plurality of second elements 21B are mounted on a second conductive portion 1122. The plurality of second elements 21B are arranged along a second direction y. The plurality of first elements 21A respectively correspond to first switching elements in this disclosure. The plurality of second elements 21B respectively correspond to second switching elements in this disclosure.

[0269] like Figure 34 , Figure 37 as well as Figure 38 As shown, the plurality of semiconductor elements 21 have a first electrode 211, a second electrode 212, a third electrode 213 and two fourth electrodes 214.

[0270] like Figure 37 as well as Figure 38 As shown, the first electrode 211 is opposite to either the first conductive portion 1121 or the second conductive portion 1122. A current corresponding to the electrical charge before conversion by the semiconductor element 21 flows through the first electrode 211. That is, the first electrode 211 corresponds to the drain electrode of the semiconductor element 21.

[0271] like Figure 34 , Figure 37 as well as Figure 38 As shown, the second electrode 212 is located on the opposite side of the first electrode 211 in the thickness direction z. A current corresponding to the electrical power converted by the semiconductor element 21 flows through the second electrode 212. That is, the second electrode 212 is equivalent to the source electrode of the semiconductor element 21.

[0272] like Figure 34 As shown, the third electrode 213 is located on the same side as the second electrode 212 in the thickness direction z. A gate voltage for driving the semiconductor element 21 is applied to the third electrode 213. That is, the third electrode 213 corresponds to the gate electrode of the semiconductor element 21. Figure 34 As shown, when viewed from above, the area of ​​the third electrode 213 is smaller than that of the second electrode 212.

[0273] like Figure 34 , Figure 37 as well as Figure 38As shown, the two fourth electrodes 214 are located on the same side as the second electrode 212 in the thickness direction z, and are located next to the third electrode 213 in the first direction x. In the illustrated example, the two fourth electrodes 214 are disposed on either side of the third electrode 213 in the second direction y, separated by the third electrode 213. The potential of each fourth electrode 214 is equal to the potential of the second electrode 212. The fourth electrode 214 corresponds to the source sensing electrode. Unlike the illustrated example, each semiconductor element 21 may include only one of the two fourth electrodes 214, or it may not include either of the two fourth electrodes 214.

[0274] like Figure 37 as well as Figure 38 As shown, a conductive bonding layer 23 is located between any one of the first conductive portions 1121 and 1122 and any one of the first electrodes 211 of the plurality of semiconductor elements 21. The conductive bonding layer 23 is, for example, solder. Alternatively, the conductive bonding layer 23 may also comprise a sintered body of metal particles. The first electrodes 211 of the plurality of first elements 21A are conductively bonded to the first conductive portion 1121 via the conductive bonding layer 23. Thus, the first electrodes 211 of the plurality of first elements 21A are connected to the first conductive portion 1121. The first electrodes 211 of the plurality of second elements 21B are conductively bonded to the second conductive portion 1122 via the conductive bonding layer 23. Thus, the first electrodes 211 of the plurality of second elements 21B are connected to the second conductive portion 1122. Furthermore, unlike this embodiment, the plurality of first elements 21A and the plurality of second elements 21B may also be mounted on a metal component that is different from a portion of the DBC substrate, etc. In this case, the metal component corresponds to the first conductive portion and the second conductive portion in this disclosure. This metal component may, for example, be supported on the DBC substrate, etc.

[0275] Multiple power terminals 13 are respectively connected to multiple semiconductor elements 21. Current corresponding to the power before conversion by the multiple semiconductor elements 21 or the power after conversion by the multiple semiconductor elements 21 flows through the multiple power terminals 13. The multiple power terminals 13 include a first power terminal 14, two second power terminals 15, and two third power terminals 16.

[0276] like Figure 33 as well as Figure 39 As shown, the first power terminal 14 is joined to the first conductive portion 1121. This joining is not limited; it can be a joining using a conductive joining material (not shown) (e.g., solder), a joining using laser welding, or a riveting joining. The first power terminal 14 is connected to the first electrodes 211 of a plurality of first elements 21A via the first conductive portion 1121. The first power terminal 14 is a P-terminal (positive terminal) to which a DC power supply voltage, which is the object of power conversion, is applied. Figure 33As shown, the first power terminal 14 is located on the opposite side of the second conductive portion 1122 in the first direction x, spaced apart from the first conductive portion 1121. The first power terminal 14 extends from the first conductive portion 1121 toward the x1 side of the first direction x and protrudes from the sealing resin 50 toward the x1 side of the first direction x. Figure 32 As shown, the first power terminal 14 includes a portion covered by the sealing resin 50 and a portion exposed from 40. In the first power terminal 14, the portion covered by the sealing resin 50 is bonded to the first conductive portion 1121. Additionally, the portion exposed from the sealing resin 50 in the first power terminal 14 serves as the aforementioned P-terminal of the semiconductor device B1.

[0277] Two second power terminals 15 are connected to second conductive members 32. The two second power terminals 15 are connected to the second electrodes 212 of a plurality of second elements 21B via the second conductive members 32. The two second power terminals 15 are N-terminals (negative terminals) to which a DC power supply voltage is applied for power conversion. The two second power terminals 15 are separated from each other in the second direction y. A first power terminal 14 is located between the two second power terminals 15. Figure 33 As shown, two second power terminals 15 are located on the same side as the first power terminal 14 in the first direction x, relative to the first conductive portion 1121 and the second conductive portion 1122. The two second power terminals 15 are separated from the first conductive portion 1121 and the second conductive portion 1122, respectively. The two second power terminals 15 extend in the first direction x and protrude from the sealing resin 50 towards the x1 side of the first direction x. Figure 32 As shown, each of the two second power terminals 15 includes a portion covered by the sealing resin 50 and a portion exposed from the sealing resin 50. In each second power terminal 15, a second conductive member 32 is joined to the portion covered by the sealing resin 50. Furthermore, in each second power terminal 15, the portion exposed from the sealing resin 50 serves as the aforementioned N-terminal of the semiconductor device B1.

[0278] like Figure 33 as well as Figure 36As shown, the two third power terminals 16 are respectively connected to the second conductive portion 1122. This connection is not limited and can be a connection using a conductive bonding material (not shown) (e.g., solder), a laser welding connection, or a riveting connection. The two third power terminals 16 are respectively connected to the first electrodes 211 of the plurality of second elements 21B via the second conductive portion 1122. Additionally, the two third power terminals 16 are respectively connected to the second electrodes 212 of the plurality of first elements 21A via the second conductive portion 1122 and the first conductive member 31. Alternating current converted by the plurality of semiconductor elements 21 (the plurality of first elements 21A and the plurality of second elements 21B) is output from the two third power terminals 16. That is, the two third power terminals 16 are respectively the output terminals of this alternating current. The two third power terminals 16 are separated from each other in the second direction y. Figure 33 As shown, two third power terminals 16 are spaced apart from the second conductive portion 1122 in the first direction x and are located on the opposite side to the first conductive portion 1121. The two third power terminals 16 extend from the second conductive portion 1122 towards the x2 side of the first direction x, and protrude from the sealing resin 50 towards the x2 side of the first direction x. Figure 32 As shown, each of the two third power terminals 16 includes a portion covered by the sealing resin 50 and a portion exposed from the sealing resin 50. In each third power terminal 16, the portion covered by the sealing resin 50 is bonded to the second conductive portion 1122. Furthermore, in each third power terminal 16, the portion exposed from the sealing resin 50 serves as the aforementioned output terminal of the semiconductor device B1.

[0279] In this embodiment, the semiconductor device B1 includes four first elements 21A and four second elements 21B. The number of first elements 21A and the number of second elements 21B are not limited to this structure and can be appropriately varied according to the performance requirements of the semiconductor device B1. Figure 34 In the example shown, there are four of each of the first element 21A and the second element 21B. The number of first elements 21A and second elements 21B can be two or three, or five or more. The number of first elements 21A and second elements 21B can be equal or different. The number of first elements 21A and second elements 21B is determined by the current capacity handled by the semiconductor device B1.

[0280] Semiconductor device B1 is configured, for example, as a half-bridge switching circuit. In this case, a plurality of first elements 21A constitute the upper branch circuit of semiconductor device B1, and a plurality of second elements 21B constitute the lower branch circuit. In the upper branch circuit, the plurality of first elements 21A are connected in parallel with each other, and in the lower branch circuit, the plurality of second elements 21B are connected in parallel with each other. Each first element 21A and each second element 21B are connected in series to form a bridging layer.

[0281] The plurality of control terminals 45 are pin-shaped terminals used to control the drive of each first element 21A and each second element 21B. The plurality of control terminals 45 are, for example, crimp terminals. The plurality of control terminals 45 include a plurality of first control terminals 46A-46C and a plurality of second control terminals 47A-47D. The plurality of first control terminals 46A-46C are used for controlling each first element 21A, etc. The plurality of second control terminals 47A-47D are used for controlling each second element 21B, etc.

[0282] Multiple first control terminals 46A to 46C are arranged at intervals in the second direction y. For example... Figure 34 , Figure 39 as well as Figure 40 As shown, each of the first control terminals 46A to 46C is supported on the first conductive portion 1121 via the control terminal support 48 (the first support portion 48A described later). Figure 33 as well as Figure 34 As shown, each of the first control terminals 46A to 46C is located in the first direction x between the plurality of first elements 21A and the first power terminal 14 and the two second power terminals 15.

[0283] The first control terminal 46A is a terminal (gate terminal) for inputting drive signals to the plurality of first elements 21A. A drive signal (e.g., a gate voltage) for driving the plurality of first elements 21A is input to the first control terminal 46A.

[0284] The first control terminal 46B is a terminal (source sensing terminal) for detecting the source signal of the plurality of first elements 21A. The voltage (voltage corresponding to the source current) applied from the first control terminal 46B to each of the second electrodes 212 (source electrodes) of the plurality of first elements 21A is detected.

[0285] The first control terminal 46C is a terminal (drain sensing terminal) for detecting the drain voltage of the plurality of first elements 21A. The voltage (voltage corresponding to the drain current) applied from the first control terminal 46C to each of the first electrodes 211 (drain electrodes) of the plurality of first elements 21A is detected.

[0286] Multiple second control terminals 47A to 47D are arranged at intervals in the second direction y. For example... Figure 34 , Figure 39 as well as Figure 43 As shown, each of the second control terminals 47A to 47D is supported on the second conductive portion 1122 via the control terminal support 48 (the second support portion 48B described later). Figure 33 as well as Figure 34As shown, each of the second control terminals 47A to 47D is located between the plurality of second elements 21B and the two third power terminals 16 in the first direction x.

[0287] The second control terminal 47A is a terminal (gate terminal) for inputting drive signals to the plurality of second elements 21B. A drive signal (e.g., a gate voltage) for driving the plurality of second elements 21B is input to the second control terminal 47A. The second control terminal 47B is a terminal (source sensing terminal) for detecting source signals to the plurality of second elements 21B. The voltage (voltage corresponding to the source current) applied from the second control terminal 47B to each of the second electrodes 212 (source electrodes) of the plurality of second elements 21B is detected. The second control terminals 47C and 47D are not connected to any of the plurality of second elements 21B. The second control terminals 47C and 47D are terminals that are connected to the thermistor 22.

[0288] The multiple control terminals 45 (multiple first control terminals 46A to 46C and multiple second control terminals 47A to 47D) each include a bracket 451 and a metal pin 452.

[0289] The support 451 is made of a conductive material. The support 451 is disposed on the main surface 1120 of the supporting conductor 112 (support substrate 11). In this embodiment, as... Figure 44 As shown, the bracket 451 is bonded to the control terminal support 48 (the first metal layer 482 described later) via a conductive bonding layer 459. Figure 44 As shown, the support 451 includes a cylindrical portion 453, a first convex edge portion 454, and a second convex edge portion 455.

[0290] The cylindrical portion 453 extends in the thickness direction z, for example, it is cylindrical.

[0291] The first convex edge 454 is connected to the end of the cylindrical portion 453 on the z1 side of the thickness direction z. The first convex edge 454 has a first surface 454a. The first surface 454a is the surface facing the z1 side of the thickness direction z. The first surface 454a is located at the end of the support 451 on the z1 side of the thickness direction z. When viewed in the thickness direction z, the first surface 454a is annular (annular in the illustrated example).

[0292] The second protruding edge 455 is connected to the end of the cylindrical portion 453 on the z2 side of the thickness direction z. In this embodiment, the second protruding edge 455 is bonded to the control terminal support 48 (the first metal layer 482 described later) via the conductive bonding layer 459.

[0293] Metal pins 452 are inserted into the first protruding edge 454 and a portion of the cylindrical portion 453 in the bracket 451. The entire bracket 451 is exposed from the sealing resin 50.

[0294] The metal pin 452 is a rod-shaped component extending in the thickness direction z. The metal pin 452 is supported by the bracket 451 by being pressed into it. The metal pin 452 is in communication with the control terminal support 48 (the first metal layer 482 described later) via the bracket 451 and the conductive bonding layer 459. The metal pin 452 protrudes further in the thickness direction z towards the z1 side than the upper surface of the sealing resin 50 (the resin main surface 51 described later).

[0295] The control terminal support 48 supports a plurality of control terminals 45. The control terminal support 48 is located in the thickness direction z between the main surface 1120 of the first conductive part 1121 and the main surface 1120 of the second conductive part 1122 and the plurality of control terminals 45.

[0296] The control terminal support 48 includes a first support portion 48A and a second support portion 48B. The first support portion 48A is disposed on the first conductive portion 1121 and supports a plurality of first control terminals 46A to 46C among the plurality of control terminals 45. Figure 44 As shown, the first support portion 48A is bonded to the first conductive portion 1121 via a bonding layer 49. The bonding layer 49 can be conductive or insulating, for example, using solder. The second support portion 48B is disposed on the second conductive portion 1122, supporting a plurality of second control terminals 47A to 47D among the plurality of control terminals 45. The second support portion 48B is the same as the first support portion 48A, and is bonded to the second conductive portion 1122 via a bonding layer (not shown).

[0297] The control terminal support 48 (each of the first support portion 48A and the second support portion 48B) is, for example, made of a DBC (Direct Bonded Copper) substrate. The control terminal support 48 has an insulating layer 481, a first metal layer 482 and a second metal layer 483 stacked on top of each other.

[0298] The insulating layer 481 is made of ceramic, for example. The insulating layer 481 is rectangular in shape, for example, when viewed from above.

[0299] like Figure 44 As shown, a first metal layer 482 is formed on the upper surface of the insulating layer 481. Each control terminal 45 is vertically disposed on the first metal layer 482. The first metal layer 482 may contain, for example, Cu (copper) or a Cu (copper) alloy. Figure 34As shown, the first metal layer 482 includes a first portion 482A, a second portion 482B, a third portion 482C, a fourth portion 482D, and a fifth portion 482E. The first portion 482A, the second portion 482B, the third portion 482C, the fourth portion 482D, and the fifth portion 482E are spaced apart from each other and are insulated from each other.

[0300] The fourth part 482D is connected to a plurality of first metal wires 41, and is connected to the third electrode 213 (gate electrode) of each first element 21A (each second element 21B) via each first metal wire 41. The fourth part 482D and the first part 482A are connected to a plurality of third metal wires 43. Thus, the first part 482A is connected to the third electrode 213 (gate electrode) of each first element 21A (each second element 21B) via the third metal wires 43 and the first metal wires 41. Figure 34 As shown, a first control terminal 46A is connected to a first portion 482A of the first support portion 48A, and a second control terminal 47A is connected to a first portion 482A of the second support portion 48B.

[0301] The second part 482B provides a plurality of second metal wires 42 for connection, and through each second metal wire 42, is connected to the fourth electrode 214 (source sensing electrode) of each first element 21A (each second element 21B). Figure 34 As shown, a first control terminal 46B is connected to the second part 482B of the first support portion 48A, and a second control terminal 47B is connected to the second part 482B of the second support portion 48B.

[0302] The third part 482C is connected to a second control terminal 47C. For example... Figure 34 As shown, a second control terminal 47C is connected to the third portion 482C of the second support portion 48B. A first control terminal 46C and a second control terminal 47D are connected to the fifth portion 482E. The first control terminal 46C is connected to the fifth portion 482E of the first support portion 48A. The fifth portion 482E of the first support portion 48A is connected to a fourth metal wire 44, which connects to the first electrode 211 (drain electrode) of each first element 21A. The second control terminal 47D is connected to the fifth portion 482E of the second support portion 48B.

[0303] Thermistor 22 is electrically connected across the third portion 482C and the fifth portion 482E of the second support portion 48B. Thermistor 22 is, for example, an NTC (Negative Temperature Coefficient) thermistor. NTC thermistors have the characteristic that their resistance decreases slowly with increasing temperature. Thermistor 22 serves as a temperature sensor for the semiconductor device B1.

[0304] Each of the aforementioned first metal wires 41, second metal wires 42, third metal wires 43, and fourth metal wires 44 is, for example, a bonding lead. The constituent materials of each first metal wire 41, second metal wire 42, third metal wire 43, and fourth metal wire 44 are not particularly limited, and may include, for example, any one of Au (gold), Al (aluminum), or Cu (copper). Furthermore, in Figure 32 , Figures 36-40 as well as Figure 43 In the text, multiple first metal wires 41, multiple second metal wires 42, multiple third metal wires 43, and a fourth metal wire 44 are omitted.

[0305] like Figure 44 As shown, a second metal layer 483 is formed on the lower surface of the insulating layer 481 (the surface facing the z2 side in the thickness direction z). Figure 44 As shown, the second metal layer 483 of the first support portion 48A is bonded to the first conductive portion 1121 via a bonding layer 49. The second metal layer 483 of the second support portion 48B is the same as the second metal layer 483 of the first support portion 48A, and is bonded to the second conductive portion 1122 via a bonding layer (not shown).

[0306] like Figure 33 as well as Figure 36 As shown, the first conductive component 31 is electrically connected to the second electrodes 212 and the second conductive portion 1122 of the plurality of first elements 21A. Thus, the second electrodes 212 of the plurality of first elements 21A are connected to the second conductive portion 1122. The composition of the first conductive component 31 is not particularly limited, and may include copper, for example. The first conductive component 31 is a metal clip. Figure 33 as well as Figure 36 As shown, the first conductive component 31 has a main body 311, a plurality of first joints 312 and a plurality of second joints 313.

[0307] The main body 311 constitutes the main part of the first conductive component 31. For example... Figure 33 As shown, the main body 311 extends in the second direction y. Figure 33 as well as Figure 36 As shown, the main body 311 spans between the first conductive part 1121 and the second conductive part 1122. Figure 33 As shown, a plurality of through holes 310 are formed in the main body portion 311. The plurality of through holes 310 penetrate the main body portion 311 in the thickness direction z. In top view, the plurality of through holes 310 overlap with the first conductive portion 1121 and the second conductive portion 1122. As a result, when the sealing resin 50 is formed, the flow of the sealing resin 50 into the lower part of the main body portion 311 in the thickness direction z (z2 side of the thickness direction z) becomes better.

[0308] like Figure 33 as well as Figure 36 As shown, multiple first joints 312 are individually joined to the second electrodes 212 of multiple first elements 21A. Each of the multiple first joints 312 is opposite to the second electrode 212 of any one of the multiple first elements 21A. In top view, each first joint 312 extends from the main body 311 towards the x1 side of the first direction x. In the illustrated example, the multiple first joints 312 are divided into two strands from the main body 311, but they may not be divided into two strands. The base end of each first joint 312 (the end on the side connected to the main body 311) bends downward in the thickness direction z (to the z2 side of the thickness direction z). Therefore, the front end of each first joint 312 (and the end on the side opposite to the side connected to the main body 311) is located downward in the thickness direction z (to the z2 side of the thickness direction z) than the main body 311 in the thickness direction z.

[0309] like Figure 33 as well as Figure 36 As shown, a plurality of second joints 313 are joined to the second conductive portion 1122. The plurality of second joints 313 are respectively opposed to the second conductive portion 1122. In top view, each second joint 313 extends from the main body portion 311 toward the x1 side of the first direction x. The base end of each second joint 313 (the end on the side connected to the main body portion 311) bends downward in the thickness direction z (to the z2 side of the thickness direction z). Therefore, the front end of each second joint 313 (and the end on the side opposite to the side connected to the main body portion 311) is located downward in the thickness direction z (to the z2 side of the thickness direction z) than the main body portion 311 in the thickness direction z.

[0310] like Figure 37 As shown, the semiconductor device B1 also includes a first conductive bonding layer 33. The first conductive bonding layer 33 is situated between the second electrodes 212 of the plurality of first elements 21A and the plurality of first bonding portions 312. The first conductive bonding layer 33 electrically bonds the second electrodes 212 of the plurality of first elements 21A to the plurality of first bonding portions 312. The first conductive bonding layer 33 is, for example, solder. Alternatively, the first conductive bonding layer 33 may also comprise a sintered body of metal particles.

[0311] like Figure 36 As shown, the semiconductor device B1 also includes a second conductive bonding layer 34. The second conductive bonding layer 34 is located between the second conductive portion 1122 and the second bonding portion 313. The second conductive bonding layer 34 electrically bonds the second conductive portion 1122 and the second bonding portion 313. The second conductive bonding layer 34 is, for example, solder. Alternatively, the second conductive bonding layer 34 may also comprise a sintered body of metal particles.

[0312] like Figure 32As shown, the second conductive component 32 is electrically connected to the second electrodes 212 of the plurality of second elements 21B and the two second power terminals 15. Thus, the second electrodes 212 of the plurality of second elements 21B are connected to the two second power terminals 15. The composition of the second conductive component 32 is not particularly limited, and may include copper. The second conductive component 32 is a metal clip. Figure 32 , Figure 36 as well as Figures 39-42 As shown, the second conductive member 32 has a pair of main body portions 321, a plurality of third joint portions 322, a pair of fourth joint portions 324, a plurality of intermediate portions 326, a plurality of crossbeam portions 327, and a pair of hanging portions 328.

[0313] like Figure 32 As shown, a pair of main body portions 321 are positioned separately in the second direction y. The pair of main body portions 321 extend in the first direction x. Figure 36 as well as Figure 40 As shown, a pair of main body portions 321 are arranged parallel to the upper surfaces of the first conductive portion 1121 and the second conductive portion 1122. The pair of main body portions 321 are located further away from the first conductive portion 1121 and the second conductive portion 1122 than the main body portion 311 of the first conductive member 31.

[0314] like Figure 32 , Figure 41 as well as Figure 42 As shown, a plurality of intermediate portions 326 are located in mutually separated positions in the second direction y, and are situated between a pair of main body portions 321 in the second direction y. The plurality of intermediate portions 326 extend in the first direction x.

[0315] like Figure 32 as well as Figure 42 As shown, a plurality of third joints 322 are individually joined to the second electrodes 212 of a plurality of second elements 21B. Each of the plurality of third joints 322 is opposite to the second electrode 212 of any one of the plurality of second elements 21B. In top view, the plurality of third joints 322 extend from a plurality of intermediate portions 326 in the second direction y. The base end of each third joint 322 (the end on the side connected to the intermediate portion 326) bends downward in the thickness direction z (towards the z2 side of the thickness direction z). Therefore, the front end of each third joint 322 (and the end on the side opposite to the side connected to the intermediate portion 326) is located downward in the thickness direction z (towards the z2 side of the thickness direction z) than the intermediate portion 326 in the thickness direction z.

[0316] like Figure 32 as well as Figure 36 As shown, a pair of fourth couplings 324 are individually coupled to two second power terminals 15. Each pair of fourth couplings 324 is opposite to one of the corresponding two second power terminals 15.

[0317] like Figure 32 As shown, multiple crossbeam portions 327 are arranged along the second direction y. In top view, the multiple crossbeam portions 327 include areas that individually overlap with multiple first joint portions 312 of the first conductive member 31. Figure 32 as well as Figure 41 As shown, the crossbeam portion 327 located at the center in the second direction y is connected to a plurality of intermediate portions 326 on both sides in the second direction y. The remaining two crossbeam portions 327 are connected to either one of a pair of main body portions 321 and either of the plurality of intermediate portions 326 on both sides in the second direction y.

[0318] like Figure 32 as well as Figure 41 As shown, a pair of hanging portions 328 are individually connected to a pair of main body portions 321. (As indicated...) Figure 41 As shown, a pair of downwardly extending portions 328 extend downward in the thickness direction z (towards the z2 side of the thickness direction z) from one of the corresponding main body portions 321. Each pair of downwardly extending portions 328 is connected to the outer edge of the corresponding main body portion 321 in the second direction y. In the illustrated example, when viewed along the second direction y, the lower ends of the pair of downwardly extending portions 328 (the z2 side edges of the thickness direction z) overlap with the first conductive portion 1121.

[0319] like Figure 38 As shown, the semiconductor device B1 also includes a third conductive bonding layer 35. The third conductive bonding layer 35 is located between the second electrodes 212 of the plurality of second elements 21B and the plurality of third bonding portions 322. The third conductive bonding layer 35 electrically bonds the second electrodes 212 of the plurality of second elements 21B to the plurality of third bonding portions 322. The third conductive bonding layer 35 is, for example, solder. Alternatively, the third conductive bonding layer 35 may also comprise a sintered body of metal particles.

[0320] like Figure 36 As shown, the semiconductor device B1 also includes a fourth conductive bonding layer 36. The fourth conductive bonding layer 36 is located between the two second electrical terminals 15 and a pair of fourth bonding portions 324. The fourth conductive bonding layer 36 electrically bonds the two second electrical terminals 15 and the pair of fourth bonding portions 324. The fourth conductive bonding layer 36 is, for example, solder. Alternatively, the fourth conductive bonding layer 36 may also comprise a sintered body of metal particles.

[0321] like Figures 30-43As shown, the sealing resin 50 covers a plurality of semiconductor elements 21, a first conductive component 31, a second conductive component 32, a plurality of first metal wires 41, a plurality of second metal wires 42, and a plurality of third metal wires 43. Furthermore, the sealing resin 50 covers a portion of each of the supporting substrate 11, the plurality of power terminals 13, and the control terminal support 48. The sealing resin 50 is electrically insulating. The sealing resin 50, for example, comprises a black epoxy resin. The sealing resin 50 is formed, for example, by molding. Figures 30-32 as well as Figures 35-43 As shown, the sealing resin 50 has a resin main surface 51, a resin back surface 52, a plurality of resin side surfaces 531 to 534, a plurality of first recesses 511, and a pair of recesses 531a.

[0322] like Figure 36 as well as Figures 39-43 As shown, the resin main surface 51 faces the same direction in the thickness direction z as the upper surface (main surface 1120) of the first conductive portion 1121 and the upper surface (main surface 1120) of the second conductive portion 1122. Metal pins 452 of the plurality of control terminals 45 (a plurality of first control terminals 46A-46C and a plurality of second control terminals 47A-47D) protrude from the resin main surface 51. Figure 36 as well as Figures 39-43 As shown, the resin back surface 52 faces the side opposite to the resin main surface 51 in the thickness direction z. Figure 35 As shown, the resin back surface 52 is a frame-like structure that surrounds the lower surface (the z2 side of the thickness direction z) of the back metal layer 113 of the support substrate 3 when viewed from above. The back metal layer 113 of the support substrate 11 is exposed from the resin back surface 52. The lower surface (the z2 side of the thickness direction z) of the back metal layer 113 is, for example, the same surface as the resin back surface 52.

[0323] like Figure 31 , Figure 32 , Figure 36 as well as Figure 39 As shown, resin side surface 531 and resin side surface 532 are spaced apart from each other in the first direction x. Resin side surface 531 and resin side surface 532 face opposite sides in the first direction x and extend in the second direction y. Resin side surface 531 and resin side surface 532 are connected to the resin main surface 51. Resin side surface 531 faces the x1 side of the first direction x, and resin side surface 532 faces the x2 side of the first direction x. A first power terminal 14 and two second power terminals 15 protrude from resin side surface 531, respectively. Two third power terminals 16 protrude from resin side surface 532, respectively.

[0324] like Figure 31 , Figure 32 as well as Figures 40-43As shown, resin side surface 533 and resin side surface 534 are spaced apart from each other in the second direction y. Resin side surface 533 and resin side surface 534 face opposite sides in the second direction y and extend in the first direction x. Resin side surface 533 and resin side surface 534 are connected to resin main surface 51 and resin back surface 52. Resin side surface 533 faces the y1 side of the second direction y, and resin side surface 534 faces the y2 side of the second direction y.

[0325] like Figure 30 , Figure 39 , Figure 40 , Figure 43 as well as Figure 44 As shown, a plurality of first recesses 511 are recessed from the resin main surface 51 toward the z2 side in the thickness direction z. In this embodiment, the plurality of first recesses 511 are individually provided corresponding to a plurality of control terminals 45. The plurality of control terminals 45 are individually configured corresponding to a plurality of first recesses 511.

[0326] like Figure 31 , Figure 39 , Figure 40 , Figure 43 as well as Figure 44 As shown, the first recess 511 completely overlaps with the bracket 451 in the corresponding control terminal 45 when viewed from above. In this embodiment, as... Figure 44 As shown, the first recess 511 has a first recess inner surface 512 and a chamfered portion 515. The first recess inner surface 512 extends in the thickness direction z and is formed into a conical shape that is inclined such that the inner diameter decreases as it moves toward the z2 side of the thickness direction z.

[0327] like Figure 44 As shown, the inner surface 512 of the first recess has a first end edge 513 and a second end edge 514. The first end edge 513 is located at the end of the inner surface 512 of the first recess on the z2 side in the thickness direction z, and is in contact with the control terminal support 48 (first metal layer 482). The second end edge 514 is located at the end of the inner surface 512 of the first recess on the z1 side in the thickness direction z. The second end edge 514 surrounds the first end edge 513 when viewed from above.

[0328] The chamfered portion 515 is connected to the resin main surface 51 and is located between the resin main surface 51 and the inner surface 512 of the first recess. The specific shape of the chamfered portion 515 is not particularly limited, for example, an R-shaped chamfer (rounded chamfer) or a C-shaped chamfer can be listed. In the illustrated example, the chamfered portion 515 is an R-shaped chamfer.

[0329] Such a first recess 511 is formed, for example, by molding a control terminal support 48 by pushing it with a pin or the like with a shape corresponding to the first recess 511, thereby forming a mark of sealing resin 50. Figure 45 This refers to a manufacturing process of semiconductor device B1, which is related to... Figure 44 The same sectional view. (e.g.) Figure 45 As shown, for example, a cylindrical pin 911 is provided in the mold 91 used for molding. A bracket 451 is arranged in the inner space of the cylindrical pin 911, and while pushing the lower end (the end on the z2 side of the thickness direction z) of the cylindrical pin 911 towards the control terminal support 48 (first metal layer 482), a flowable resin material is injected into the cavity space 919 of the mold 91. Figure 44 as well as Figure 45 As understood, the inner surface 512 of the first recess 511 is a draft angle corresponding to the outer peripheral surface of the cylindrical pin 911. Additionally, as... Figure 45 As shown, in the mold 91, a rounded corner portion 915 is provided at the base of the cylindrical pin 911. The chamfered portion 515 of the first recess 511 has a shape corresponding to the rounded corner portion 915 of the mold 91. After the sealing resin 50 is formed by molding using the mold 91, the entire support 451 disposed in the inner space of the cylindrical pin 911 is exposed from the sealing resin 50.

[0330] By controlling the configuration of the bracket 451 of the terminal 45, during molding, there exists Figure 45 The lower end of the shown cylindrical pin 911 is pressed across the first metal layer 482 and the insulating layer 481. On the insulating layer 481, there is a step difference in the thickness direction z between the portion where the first metal layer 482 is formed and the portion where the first metal layer 482 is not formed. Therefore, when the lower end of the cylindrical pin 911 is pressed across the first metal layer 482 and the insulating layer 481, a gap may be generated between the lower end of the cylindrical pin 911 and the control terminal support 48 (insulating layer 481). Considering this situation, a method can be adopted whereby, for example, a resist layer is formed on the upper surface of the insulating layer 481 where the first metal layer 482 is not formed, to eliminate the aforementioned step difference between the formed and unformed portions of the first metal layer 482 on the insulating layer 481. Alternatively, a cushioning material can be used to form the lower end of the cylindrical pin 911. In this case, when the cylindrical pin 911 is pushed against the control terminal support 48, the aforementioned step difference can be absorbed by the cushioning material, and no gap will be generated between the lower end of the cylindrical pin 911 and the control terminal support 48 (insulating layer 481).

[0331] In addition, refer to Figure 45The method for forming the first recess 511 is not limited to the method described above. For example, the sealing resin 50 can also be formed by molding while pressing the control terminal support 48 with a columnar solid pin corresponding to the first recess 511. In this case, the bracket 451 is not disposed on the control terminal support 48 during molding. Furthermore, after molding, the bracket 451 is disposed on the first recess 511 on the control terminal support 48.

[0332] In the illustrated example, the first surface 454a of the bracket 451 (first convex edge 454) is located on the z2 side in the thickness direction z relative to the resin main surface 51. Thus, the entire bracket 451 is retracted into the first recess 511.

[0333] like Figure 31 As shown, a pair of recesses 531a are recessed from the resin side surface 531 toward the x2 side in the first direction x. The pair of recesses 531a extend from the resin main surface 51 to the resin back surface 52 in the thickness direction z. The pair of recesses 531a are located on both sides of the first power terminal 14 in the second direction y.

[0334] Next, the function of this embodiment will be explained.

[0335] The support 451 constituting each control terminal 45 is disposed on the main surface 1120 of the supporting conductor 112 (support substrate 11). The metal pin 452 constituting each control terminal 45 protrudes further into the thickness direction z towards the z1 side than the resin main surface 51. With this structure, multiple control terminals 45 are disposed in the area surrounded by the resin main surface 51 (sealing resin 50) when viewed from above. Such a semiconductor device B1 can achieve miniaturization when viewed from above.

[0336] All the supports 451 of each control terminal 45 are exposed from the sealing resin 50. This structure prevents the sealing resin 50 from flowing into the interior of the supports 451 into which the metal pins 452 are inserted. Therefore, in the semiconductor device B1, the conduction of the supports 451 and the metal pins 452 can be properly maintained, enabling the control terminals 45, which include the supports 451 and the metal pins 452, to function properly.

[0337] Multiple control terminals 45 are disposed in the first recesses 511 of the sealing resin 50. In this embodiment, the sealing resin 50 has multiple first recesses 511, and the multiple control terminals 45 are individually disposed corresponding to each of the multiple first recesses 511. The first recess 511 (the inner surface 512 of the first recess) has a first edge 513 that contacts the control terminal support 48 (the first metal layer 482). With this structure, the surface distance along the surface of the sealing resin 50 (the resin main surface 51, the inner surface 512 of the first recess 511, etc.) of adjacent control terminals 45 can be increased. Therefore, the semiconductor device B1 is suitable for miniaturization when viewed from above while improving the voltage withstand capability of adjacent control terminals 45.

[0338] The first recess 511 completely overlaps with the bracket 451 in the corresponding control terminal 45 when viewed from above. With this structure, the bracket 451 surrounded by the first recess 511 has excellent visual visibility when viewed from above. This further improves the workability of pressing the metal pin 452 into the bracket 451.

[0339] The following describes variations of the semiconductor device based on the second aspect of this disclosure. The structures of each part in each variation can be combined with each other without causing technical inconsistencies.

[0340] Figures 46-48 A semiconductor device representing a first variation of the first embodiment of the second scheme. Figure 46 This is a top view of the semiconductor device B11 in this modified example. Figure 47 It is along Figure 46 A sectional view of the XLVII-XLVII line. Figure 48 It is along Figure 46 A cross-sectional view of the XLVIII-XLVIII line. Furthermore, in Figure 46 In the following figures, elements that are the same as or similar to the semiconductor device B1 in the above embodiment will be labeled with the same symbols as in the above embodiment, and descriptions will be omitted as appropriate.

[0341] In this modified example of the semiconductor device B11, the structure of the first recess 511 in the encapsulating resin 50 differs from that of the semiconductor device B1 in the above embodiment. For example... Figures 46-48As shown, in the semiconductor device B11, the encapsulating resin 50 has two first recesses 511. One of the first recesses 511 corresponds to a plurality of control terminals 45 (first control terminals 46A to 46C), and the plurality of control terminals 45 (first control terminals 46A to 46C) are disposed in this first recess 511. When viewed from above, this first recess 511 completely overlaps with the supports 451 of each of the plurality of control terminals 45 (first control terminals 46A to 46C). The other first recess 511 corresponds to a plurality of control terminals 45 (second control terminals 47A to 47D), and the plurality of control terminals 45 (second control terminals 47A to 47D) are disposed in this other first recess 511. When viewed from above, this other first recess 511 completely overlaps with the supports 451 of each of the plurality of control terminals 45 (second control terminals 47A to 47D).

[0342] In the semiconductor device B11 of this modified example, the support 451 constituting each control terminal 45 is disposed on the main surface 1120 of the supporting conductor 112 (support substrate 11). The metal pin 452 constituting each control terminal 45 protrudes further into the thickness direction z towards the z1 side than the resin main surface 51. With this structure, a plurality of control terminals 45 are disposed in the area surrounded by the resin main surface 51 (sealing resin 50) when viewed from above. Such a semiconductor device B11 can achieve miniaturization when viewed from above.

[0343] All the supports 451 of each control terminal 45 are exposed from the sealing resin 50. This structure prevents the sealing resin 50 from flowing into the interior of the supports 451 into which the metal pins 452 are inserted. Therefore, in the semiconductor device B11, the conduction of the supports 451 and the metal pins 452 can be properly maintained, enabling the control terminals 45, which include the supports 451 and the metal pins 452, to function properly.

[0344] Multiple control terminals 45 are disposed in the first recess 511 of the encapsulating resin 50. In the semiconductor device B11, the encapsulating resin 50 has two first recesses 511. Multiple control terminals 45 (first control terminals 46A to 46C) are disposed in one first recess 511, and multiple control terminals 45 (second control terminals 47A to 47D) are disposed in the other first recess 511. Thus, according to the structure in which multiple control terminals 45 are concentrated in one first recess 511, the encapsulating resin 50 can be formed more easily by molding.

[0345] Figure 49 A semiconductor device representing a second variation of the first embodiment of the second scheme. Figure 49 This is a cross-sectional view showing the semiconductor device B12 in this modified example, and is related to... Figure 40Same cross-sectional view. The semiconductor device B12 in this modified example also includes a first resin portion 55, which differs from the semiconductor device B1 in the above embodiment.

[0346] The first resin portion 55 fills at least a portion of the first recess 511 and is in contact with at least a portion of the support 451. In the semiconductor device B12, the first resin portion 55 fills each of the first recesses 511 by burying them. The first resin portion 55 covers the entire support 451 disposed in the first recesses 511. The material of the first resin portion 55 is not particularly limited. The first resin portion 55 may be the same material as the sealing resin 50, or it may be a different material from the sealing resin 50. In the semiconductor device B12, for example, the material of the first resin portion 55 may be different from the material of the sealing resin 50. In the semiconductor device B12, for example, the elastic modulus of the first resin portion 55 may be smaller than the elastic modulus of the sealing resin 50. Thus, the material of the first resin portion 55 in the case where the elastic modulus of the first resin portion 55 is smaller than that of the sealing resin 50 is not particularly limited; for example, silicone resin, silicone gel, etc., can be listed.

[0347] In the semiconductor device B12 of this modified example, the support 451 constituting each control terminal 45 is disposed on the main surface 1120 of the supporting conductor 112 (support substrate 11). The metal pin 452 constituting each control terminal 45 protrudes further into the thickness direction z towards the z1 side than the resin main surface 51. With this structure, a plurality of control terminals 45 are disposed in the area surrounded by the resin main surface 51 (sealing resin 50) when viewed from above. Such a semiconductor device B12 can achieve miniaturization when viewed from above.

[0348] All the supports 451 of each control terminal 45 are exposed from the sealing resin 50. This structure prevents the sealing resin 50 from flowing into the support 451 into which the metal pin 452 is inserted. Therefore, in the semiconductor device B12, the conduction of the support 451 and the metal pin 452 can be properly maintained, enabling the control terminals 45, which include the support 451 and the metal pin 452, to function properly.

[0349] In semiconductor device B12, each first recess 511 is filled with a first resin portion 55. The first resin portion 55 covers the support 451 disposed in each first recess 511. The elastic modulus of the first resin portion 55 is smaller than that of the sealing resin 50. With this structure, the stress around the support 451 covered by the first resin portion 55 can be reduced. In addition, in semiconductor device B12, by providing the first resin portion 55, it is possible to prevent foreign matter (including moisture) from intruding into the first recess 511 exposed from the sealing resin 50. Semiconductor device B12 with the above structure is preferred in terms of improving durability and reliability. In addition, semiconductor device B12 also performs the same function and effect as the above embodiment within the same structural range as semiconductor device B1 of the above embodiment.

[0350] Figure 50 The semiconductor device represents a third variation of the first embodiment of the second scheme. Figure 50 This is a cross-sectional view showing the semiconductor device B13 in this modified example, and is related to... Figure 47 Same cross-sectional view. The semiconductor device B13 of this modified example also includes a first resin portion 55, which differs from the semiconductor device B11 of the modified example described above in that it includes the first resin portion 55.

[0351] The first resin portion 55 fills at least a portion of the first recess 511 and is in contact with at least a portion of the support 451. In the semiconductor device B13, the first resin portion 55 fills a portion of the first recess 511. The first resin portion 55 covers a portion of each of the plurality of supports 451 disposed in the first recess 511. The constituent material of the first resin portion 55 is not particularly limited. The first resin portion 55 may be the same material as the encapsulating resin 50, or it may be a different material from the encapsulating resin 50. In the semiconductor device B13, for example, the constituent material of the first resin portion 55 may be different from the constituent material of the encapsulating resin 50. In the semiconductor device B13, for example, the elastic modulus of the first resin portion 55 may be greater than the elastic modulus of the encapsulating resin 50. Thus, the constituent material of the first resin portion 55 in the case where the elastic modulus of the first resin portion 55 is greater than the elastic modulus of the encapsulating resin 50 is not particularly limited; for example, epoxy potting materials may be cited.

[0352] In the semiconductor device B13 of this modified example, the support 451 constituting each control terminal 45 is disposed on the main surface 1120 of the supporting conductor 112 (support substrate 11). The metal pin 452 constituting each control terminal 45 protrudes further into the thickness direction z towards the z1 side than the resin main surface 51. With this structure, a plurality of control terminals 45 are disposed in the area surrounded by the resin main surface 51 (sealing resin 50) when viewed from above. Such a semiconductor device B13 can achieve miniaturization when viewed from above.

[0353] All the supports 451 of each control terminal 45 are exposed from the sealing resin 50. This structure prevents the sealing resin 50 from flowing into the interior of the supports 451 into which the metal pins 452 are inserted. Therefore, in the semiconductor device B13, the conduction of the supports 451 and the metal pins 452 can be properly maintained, enabling the control terminals 45, which include the supports 451 and the metal pins 452, to function properly.

[0354] In the semiconductor device B13, each first recess 511 is filled with a first resin portion 55. The first resin portion 55 covers at least a portion of the support 451 disposed in each first recess 511. The elastic modulus of the first resin portion 55 is greater than that of the sealing resin 50. According to this structure, the vibration resistance of the support 451 covered by the first resin portion 55 is improved. The semiconductor device B13 with the above-described structure is preferred in terms of achieving performance improvement. In addition, the semiconductor device B13 also performs the same function as the semiconductor device B11 in the modified example described above.

[0355] Figure 51 A semiconductor device representing a fourth variation of the first embodiment of the second scheme. Figure 51 This is a cross-sectional view showing the semiconductor device B14 in this modified example, and is related to... Figure 40 The same cross-sectional view. The semiconductor device B14 in this modified example also includes a first resin portion 55. Furthermore, in the semiconductor device B14, the thickness direction z dimension of the encapsulating resin 50 is smaller than that of the semiconductor device B1 in the above embodiment; consequently, the thickness direction z dimension of each first recess 511 is also smaller than that of the semiconductor device B1. Moreover, the support 451 of each control terminal 45 protrudes further towards the z1 side in the thickness direction z than the resin main surface 51 of the encapsulating resin 50. The first surface 454a of the support 451 (first protruding edge 454) is located on the z1 side in the thickness direction z relative to the resin main surface 51. Thus, a portion of the support 451 is housed within the first recess 511.

[0356] The first resin portion 55 fills at least a portion of the first recess 511 and is in contact with at least a portion of the support 451. In the semiconductor device B14, the first resin portion 55 fills each of the first recesses 511 by filling each of the first recesses 511. The constituent material of the first resin portion 55 is not particularly limited. The first resin portion 55 may be the same material as the sealing resin 50, or it may be a different material from the sealing resin 50. In the semiconductor device B14, for example, the constituent material of the first resin portion 55 may be different from the constituent material of the sealing resin 50. In the semiconductor device B14, for example, the elastic modulus of the first resin portion 55 may be smaller than the elastic modulus of the sealing resin 50. Thus, the constituent material of the first resin portion 55 in the case where the elastic modulus of the first resin portion 55 is smaller than the elastic modulus of the sealing resin 50 is not particularly limited; for example, silicone resin, silicone gel, etc., can be listed.

[0357] In the semiconductor device B14, the first resin portion 55 has a portion located on the z1 side of the resin main surface 51 in the thickness direction z. This z1 side of the first resin portion 55 is, for example, a portion that protrudes along the outer periphery of the support 451 (cylindrical portion 453) in the thickness direction z due to the surface tension of the first resin portion 55. In the illustrated example, the first surface 454a of the support 451 (first protruding edge 454) is exposed from the first resin portion 55.

[0358] In the semiconductor device B14 of this modified example, the support 451 constituting each control terminal 45 is disposed on the main surface 1120 of the supporting conductor 112 (support substrate 11). The metal pin 452 constituting each control terminal 45 protrudes further into the thickness direction z towards the z1 side than the resin main surface 51. With this structure, a plurality of control terminals 45 are disposed in the area surrounded by the resin main surface 51 (sealing resin 50) when viewed from above. Such a semiconductor device B14 can achieve miniaturization when viewed from above.

[0359] All the supports 451 of each control terminal 45 are exposed from the sealing resin 50. This structure prevents the sealing resin 50 from flowing into the interior of the supports 451 into which the metal pins 452 are inserted. Therefore, in the semiconductor device B14, the conduction of the supports 451 and the metal pins 452 can be properly maintained, enabling the control terminals 45, which include the supports 451 and the metal pins 452, to function properly.

[0360] In semiconductor device B14, each first recess 511 is filled with a first resin portion 55. The first resin portion 55 covers the support 451 disposed in each first recess 511. The elastic modulus of the first resin portion 55 is smaller than that of the sealing resin 50. With this structure, the stress around the support 451 covered by the first resin portion 55 can be reduced. In addition, in semiconductor device B14, the first surface 454a of each support 451 is exposed from the first resin portion 55. As a result, after the first resin portion 55 fills the first recess 511, the metal pin 452 can be pressed into the support 451. The operation of pressing the metal pin 452 into the support 451 is stable. In addition, semiconductor device B14 also has the same structure as semiconductor device B1 of the above embodiment and performs the same function as the above embodiment.

[0361] Figure 52 as well as Figure 53 A semiconductor device representing a fifth variation of the first embodiment of the second scheme. Figure 52 This is a top view showing the semiconductor device B15 of this modified example. Figure 53 It is along Figure 52 A cross-sectional view along line LIII-LIII. In the semiconductor device B15 of this modified example, the encapsulating resin 50 has a plurality of second recesses 517. The encapsulating resin 50 having second recesses 517 differs from the semiconductor device B1 of the above embodiment.

[0362] The second recess 517 is recessed from the resin main surface 51 toward the z2 side in the thickness direction z. In the semiconductor device B15, the encapsulating resin 50 has a plurality of second recesses 517. The plurality of second recesses 517 are respectively provided corresponding to any one of the plurality of first recesses 511. Figure 52 As shown, the second recess 517 surrounds the corresponding first recess 511 when viewed from above. In the illustrated example, the second recess 517 is annular when viewed from above.

[0363] like Figure 53 As shown, the second recess 517 has a second recess bottom surface 518. The second recess bottom surface 518 is located at the end of the second recess 517 on the z2 side in the thickness direction z. The second recess bottom surface 518 is spaced apart from the control terminal support 48 on the z1 side in the thickness direction z.

[0364] In the semiconductor device B15 of this modified example, the support 451 constituting each control terminal 45 is disposed on the main surface 1120 of the supporting conductor 112 (support substrate 11). The metal pin 452 constituting each control terminal 45 protrudes further into the thickness direction z towards the z1 side than the resin main surface 51. With this structure, a plurality of control terminals 45 are disposed in the area surrounded by the resin main surface 51 (sealing resin 50) when viewed from above. Such a semiconductor device B15 can achieve miniaturization when viewed from above.

[0365] All the supports 451 of each control terminal 45 are exposed from the sealing resin 50. This structure prevents the sealing resin 50 from flowing into the interior of the supports 451 into which the metal pins 452 are inserted. Therefore, in the semiconductor device B15, the conduction of the supports 451 and the metal pins 452 can be properly maintained, enabling the control terminals 45, which include the supports 451 and the metal pins 452, to function properly.

[0366] In semiconductor device B15, the encapsulating resin 50 has a second recess 517. The second recess 517 surrounds the first recess 511 when viewed from above. The end of the second recess 517 on the z2 side of the thickness direction z (the bottom surface 518 of the second recess) is spaced apart from the control terminal support 48 on the z1 side of the thickness direction z. With this structure, the surface distance along the surface of the encapsulating resin 50 (resin main surface 51, the first recess inner surface 512 of the first recess 511, the second recess 517, etc.) can be further increased when viewed from above, between the control terminal 45 surrounded by the second recess 517 and adjacent control terminals 45. Semiconductor device B15 can achieve miniaturization when viewed from above and can further improve the voltage withstand capability of adjacent control terminals 45. Furthermore, semiconductor device B15 also achieves the same effects as the semiconductor device B1 of the above embodiment within the same structural range.

[0367] The semiconductor device disclosed herein is not limited to the embodiments described above. The specific structure of each part of the semiconductor device disclosed herein can be freely modified in various ways.

[0368] In the above embodiments and variations, the case where the entire bracket 451 is exposed from the sealing resin 50 for each of the plurality of control terminals 45 has been described, but this disclosure is not limited thereto. For example, it is also possible for the bracket 451 to be covered by the sealing resin 50 in any part of the plurality of control terminals 45.

[0369] The second embodiment of this disclosure includes the structures described in the following notes 1B to 17B.

[0370] Appendix 1B.

[0371] A semiconductor device comprising:

[0372] A support substrate having a main surface facing one side in the thickness direction;

[0373] At least one terminal, comprising a conductive bracket disposed on the main surface and a metal pin inserted into the bracket; and

[0374] The sealing resin has a resin main surface facing one side in the thickness direction and covers at least a portion of the support substrate.

[0375] In at least any one of the aforementioned terminals, the entire bracket is exposed from the aforementioned sealing resin.

[0376] The aforementioned metal pin protrudes further toward the side in the thickness direction than the aforementioned resin main surface.

[0377] Appendix 2B.

[0378] According to the semiconductor device described in Appendix 1B,

[0379] It also includes a terminal support, which is located between the support substrate and the at least one terminal in the aforementioned thickness direction.

[0380] The aforementioned bracket is supported by the aforementioned terminal support body.

[0381] Appendix 3B.

[0382] According to the semiconductor device described in Appendix 2B,

[0383] The aforementioned sealing resin covers a portion of the aforementioned terminal support.

[0384] Appendix 4B.

[0385] According to the semiconductor device described in Appendix 3B,

[0386] Equipped with multiple of the aforementioned terminals,

[0387] The aforementioned sealing resin has at least one first recess that is recessed from the resin main surface to the side opposite to the thickness direction.

[0388] The aforementioned first recess has a first end edge that connects with the aforementioned terminal support.

[0389] Multiple terminals are disposed in at least one of the first recesses.

[0390] Appendix 5B.

[0391] According to the semiconductor device described in Appendix 4B,

[0392] It has multiple of the above-mentioned first recesses,

[0393] Each of the aforementioned terminals is individually configured corresponding to one of the aforementioned first recesses.

[0394] When viewed in the aforementioned thickness direction, the plurality of the aforementioned first recesses respectively overlap with the entirety of the aforementioned brackets in the corresponding aforementioned terminals.

[0395] Appendix 6B.

[0396] According to the semiconductor device described in Appendix 4B,

[0397] When viewed in the aforementioned thickness direction, the aforementioned first recess overlaps entirely with the aforementioned brackets among the plurality of aforementioned terminals.

[0398] Note 7B.

[0399] According to the semiconductor device described in Appendix 5B or 6B,

[0400] It also includes a first resin portion for filling at least a portion of the aforementioned first recess.

[0401] The first resin portion is connected to at least a portion of the bracket.

[0402] Note 8B.

[0403] According to the semiconductor device described in Appendix 7B,

[0404] The constituent materials of the first resin portion are different from those of the sealing resin.

[0405] The elastic modulus of the first resin portion is smaller than that of the sealing resin.

[0406] Note 9B.

[0407] According to the semiconductor device described in Appendix 7B,

[0408] The constituent materials of the first resin portion are different from those of the sealing resin.

[0409] The elastic modulus of the first resin portion is greater than that of the sealing resin.

[0410] Note 10B.

[0411] According to any of the appendices 4B to 9B, the semiconductor device

[0412] The aforementioned sealing resin has a second recess that is recessed from the resin main surface to the side opposite to the thickness direction.

[0413] The second recess surrounds the first recess when viewed in the thickness direction.

[0414] Appendix 11B.

[0415] According to the semiconductor device described in Appendix 10B,

[0416] The second recess has a bottom surface at the end located on the other side of the thickness direction.

[0417] The bottom surface of the second recess is spaced apart from the terminal support on one side in the thickness direction.

[0418] Appendix 12B.

[0419] The semiconductor device described in any of Appendices 4B to 11B (or any of Appendices 4B to 6B)

[0420] The aforementioned at least one first recess includes an inner side surface of the first recess.

[0421] The inner surface of the first recess has a first end edge located on the other side of the thickness direction and a second end edge located on one side of the thickness direction.

[0422] The second end edge surrounds the first end edge when viewed in the thickness direction.

[0423] Appendix 13B.

[0424] According to the semiconductor device described in Appendix 12B,

[0425] The first recess described above has a chamfered portion between the resin main surface and the inner surface of the first recess described above.

[0426] Note 14B.

[0427] The semiconductor device described in any of Notes 1B to 13B (or any of Notes 1B to 6B)

[0428] The aforementioned bracket has a first surface located at one end on one side of the aforementioned thickness direction.

[0429] The first surface is disposed on the opposite side of the thickness direction relative to the main resin surface.

[0430] Note 15B.

[0431] The semiconductor device described in any of Appendix 2B to 13B (or any of Appendix 2B to 6B)

[0432] It also includes at least one semiconductor element disposed on the main surface and electrically connected to the at least one terminal.

[0433] Note 16B.

[0434] According to the semiconductor device described in Appendix 15B,

[0435] The aforementioned at least one terminal is a control terminal used to control the aforementioned at least one semiconductor element.

[0436] Note 17B.

[0437] According to the semiconductor device described in Appendix 16B,

[0438] The aforementioned support substrate includes a first conductive portion and a second conductive portion, which are spaced apart in a first direction orthogonal to the aforementioned thickness direction.

[0439] The aforementioned at least one semiconductor element includes a first switching element coupled to the first conductive portion and a second switching element coupled to the second conductive portion.

[0440] The aforementioned control terminals include a first control terminal for controlling the first switching element and a second control terminal for controlling the second switching element.

[0441] The terminal support includes a first support portion that supports the first control terminal and a second support portion that supports the second control terminal.

[0442] Symbol Explanation

[0443] (Explanation of symbols in the first scheme)

[0444] A1, A11, A12, A13, A14, A15, A2—Semiconductor device; 10A—First semiconductor element; 10B—Second semiconductor element; 101—Element main surface; 102—Element back surface; 11—First main surface electrode; 12—Second main surface electrode; 121—Gate finger; 13—Third main surface electrode; 15—Back electrode; 17—Thermistor; 19—Conductive bonding material; 3—Support substrate; 301—Support surface; 302—Bottom surface; 31—Insulating layer; 32—Support conductor; 32A—First conductive part; 32B—Second conductive part; 321—First bonding layer; 33—Back metal layer; 41—First terminal; 42—Second terminal; 43—Third terminal; 44 —Fourth terminal, 45—Control terminal, 451—Bracket, 452—Metal pin, 453—Cylindrical portion, 453a—First outer surface, 453b—First inner surface, 454—First protruding edge, 454a—First surface, 454b—Second surface, 455—Second protruding edge, 459—Conductive bonding material, 46A, 46B, 46C, 46D, 46E—First control terminal, 47A, 47B, 47C, 47D—Second control terminal, 48—Control terminal support (terminal support), 48A—First support portion, 48B—Second support portion, 481—Insulating layer, 482—First metal layer, 482A—First part, 482B—Second part, 482C—Third Part, 482D—Fourth part, 482E—Fifth part, 482F—Sixth part, 483—Second metal layer, 49—Bonding material, 5—First conductive component, 51—Main part, 514—First opening, 52—First joint, 53—Second joint, 59—Conductive bonding material, 6—Second conductive component, 602—First stepped part, 603—Second stepped part, 61—Third joint, 611—Flat part, 612—First inclined part, 64—First path part, 641—First strip-shaped part, 643—First protrusion, 649—Recess, 65—Second path part, 651—Second strip-shaped part, 653—Second protrusion, 659—Recess, 66—Third path part 669—Recess, 67—Fourth path section, 69—Conductive bonding material, 71, 72, 73, 74—Metal wire, 8—Sealing resin, 81—Main surface of resin, 810—First recess, 811—Inner side of recess, 812—Bottom surface of recess, 813—End edge of recess, 814—Inner side of cylinder, 815—Inner side of cone, 82—Back side of resin, 831, 832—Side side of resin, 832a—Recess, 833, 834—Side side of resin, 851—Protrusion, 851a—Protrusion end face, 851b—Recess, 851c—Inner wall surface, 852—First protrusion, 852a—Top surface of protrusion, 89—First resin filling section, L1—First dimension, L2—Second dimension.

[0445] (Explanation of symbols in the second scheme)

[0446] B1, B11, B12, B13, B14, B15—Semiconductor device; 11—Support substrate; 111—Insulating layer; 112—Support conductor; 1120—Main surface; 1121—First conductive part; 1122—Second conductive part; 113—Back metal layer; 13—Power terminal; 14—First power terminal; 15—Second power terminal; 16—Third power terminal; 21—Semiconductor element; 21A—First element (first switching element); 21B—Second element (second switching element); 211—First electrode; 212—Second electrode; 213—Third electrode; 21 4—Fourth electrode, 22—Thermistor, 23—Conductive bonding layer, 31—First conductive component, 310—Through hole, 311—Main body, 312—First bonding portion, 313—Second bonding portion, 32—Second conductive component, 321—Main body, 322—Third bonding portion, 324—Fourth bonding portion, 326—Intermediate portion, 327—Beam portion, 328—Drooping portion, 33—First conductive bonding layer, 34—Second conductive bonding layer, 35—Third conductive bonding layer, 36—Fourth conductive bonding layer, 41—First metal wire, 42—Second metal wire, 43—Third metal wire, 4 4—Fourth metal wire, 45—Control terminal (terminal), 451—Bracket, 452—Metal pin, 453—Cylindrical part, 454—First convex edge, 454a—First surface, 455—Second convex edge, 459—Conductive bonding layer, 46A, 46B, 46C—First control terminal, 47A, 47B, 47C, 47D—Second control terminal, 48—Control terminal support (terminal support), 48A—First support part, 48B—Second support part, 481—Insulating layer, 482—First metal layer, 482A—First part, 482B—Second part, 482 C—Part 3, 482D—Part 4, 482E—Part 5, 483—Second metal layer, 49—Bond layer, 50—Sealing resin, 51—Main surface of resin, 511—First recess, 512—Inner side of first recess, 513—First end edge, 514—Second end edge, 515—Chamfered portion, 517—Second recess, 518—Bottom surface of second recess, 52—Back side of resin, 531, 532, 533, 534—Side side of resin, 531a—Recess, 55—First resin portion, 91—Mold, 911—Cylindrical pin, 915—Rounded corner, 919—Cavity space.

Claims

1. A semiconductor device, characterized in that, have: At least one terminal includes a conductive cylindrical support and a metal pin inserted into the support. A terminal support body includes a first insulating layer and a metal layer formed on the upper surface of the first insulating layer and supporting the bracket; A support substrate, comprising a second insulating layer, a support conductor, and a back metal layer; as well as A sealing resin covers a portion of the aforementioned bracket, a portion of the aforementioned support substrate, and the aforementioned terminal support. The aforementioned sealing resin has a resin main surface facing one side in the thickness direction. The aforementioned terminal support is located between the aforementioned support substrate and the aforementioned at least one terminal. The aforementioned bracket has a first surface located at one end in the aforementioned thickness direction and a first outer surface extending in the aforementioned thickness direction. The first surface is located at a different position from the main resin surface in the thickness direction. The aforementioned first outer surface is in contact with the aforementioned sealing resin. The aforementioned metal pin protrudes further toward one side of the aforementioned thickness direction than the aforementioned resin main surface. The aforementioned support includes a cylindrical portion extending in the aforementioned thickness direction and a first convex edge portion connected to one end of the cylindrical portion on one side of the aforementioned thickness direction. The aforementioned first convex edge has a first surface facing one side of the thickness direction, and a second surface located on the other side of the thickness direction that is closer to the first surface and also facing the other side of the thickness direction. The aforementioned cylindrical portion has the aforementioned first outer surface. The entire first outer surface and the second surface are in contact with the sealing resin. The aforementioned sealing resin has a first recess that is recessed from the resin main surface to the side opposite to the thickness direction. The first convex edge is located on the opposite side of the thickness direction relative to the main resin surface. When viewed in the aforementioned thickness direction, the first recess completely overlaps with the aforementioned cylindrical portion. The first recess has a recessed end edge located on the other side of the thickness direction and in contact with the first surface.

2. The semiconductor device according to claim 1, characterized in that, At least a portion of the first surface is exposed from the sealing resin.

3. The semiconductor device according to claim 2, characterized in that, The entire first surface described above is exposed from the aforementioned sealing resin. The first recess has an inner recess surface that is connected to the resin main surface, and a bottom recess surface that is connected to the end of the inner recess surface on the other side of the thickness direction and faces the side of the thickness direction. When viewed in the thickness direction, the bottom surface of the aforementioned concave portion surrounds the aforementioned first surface.

4. The semiconductor device according to claim 1, characterized in that, The first recess has a tapered inner surface that connects to the end edge of the recess. The aforementioned tapered inner surface is inclined such that the inner diameter increases as it faces one of the thickness directions.

5. The semiconductor device according to claim 1, characterized in that, When viewed in the thickness direction, the outer periphery of the first convex edge surrounds the first concave portion.

6. The semiconductor device according to any one of claims 1 to 5, characterized in that, The distance between the resin main surface and the first surface in the thickness direction, i.e., the first dimension, is smaller than the length of the bracket in the thickness direction, i.e., the second dimension.

7. The semiconductor device according to claim 6, characterized in that, The ratio of the first dimension to the second dimension is more than 1 / 3.

8. The semiconductor device according to any one of claims 1 to 5, characterized in that, It also includes a first resin filling portion that fills the aforementioned first recess.

9. The semiconductor device according to claim 1, characterized in that, It also includes at least one semiconductor element electrically connected to at least one of the aforementioned terminals. At least one of the aforementioned semiconductor elements is supported on the aforementioned support conductor.

10. The semiconductor device according to claim 9, characterized in that, The aforementioned at least one terminal is a control terminal used to control the aforementioned at least one semiconductor element.

11. The semiconductor device according to claim 10, characterized in that, The aforementioned support conductor includes a first conductive portion and a second conductive portion, which are spaced apart in a first direction orthogonal to the aforementioned thickness direction. The aforementioned at least one semiconductor element includes a first switching element coupled to the first conductive portion and a second switching element coupled to the second conductive portion. The aforementioned control terminals include a first control terminal for controlling the first switching element and a second control terminal for controlling the second switching element.

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