Light-emitting chip and preparation method thereof

Abstract

The invention provides a light-emitting chip and a preparation method thereof. The light-emitting chip comprises a protection layer, a first filling layer, a light shielding layer, a plurality of light-emitting diode chips and a transparent packaging plate. The plurality of light-emitting diode chips are arranged at intervals, and the shading layers are filled between the adjacent light-emitting diode chips and on the peripheries of the light-emitting diode chips; the first filling layer and the protection layer are sequentially located on the surface of the light shielding layer and located on the light emitting side of the light emitting diode chips, light transmitting windows are arranged in the first filling layer and the protection layer, and each light transmitting window exposes one light emitting diode chip; the packaging plate is located on the side, away from the first filling layer, of the protection layer, and light crosstalk between the light-emitting diodes can be prevented.

Description

Technical Field

[0001] This disclosure relates to the field of light-emitting devices, and in particular to a light-emitting chip and its fabrication method. Background Technology

[0002] Light-emitting diodes (LEDs) are widely used in displays, automotive lights, and lighting due to their advantages such as low power consumption, small size, and high reliability. With the continuous maturation of mass transfer technology, light-emitting chips packaged with LEDs are also developing rapidly.

[0003] The related technology provides a light-emitting chip, which includes a light-shielding layer, multiple light-emitting diode (LED) chips, and a packaging plate. The multiple LED chips are arranged at intervals, the light-shielding layer fills the spaces between adjacent LED chips and the periphery of the LED chips, and the packaging plate is located on the light-emitting surface of the LED chips.

[0004] In this light-emitting chip, light crosstalk can easily occur between adjacent light-emitting diode chips. Summary of the Invention

[0005] This disclosure provides a light-emitting chip and its fabrication method, which can reduce light crosstalk between adjacent light-emitting diode chips. The technical solution is as follows: On one hand, a light-emitting chip is provided, the light-emitting chip comprising: The package consists of a protective layer, a first filler layer, a light-shielding layer, multiple light-emitting diode chips, and a transparent encapsulation board. The plurality of light-emitting diode chips are arranged at intervals, and the light-shielding layer fills the spaces between adjacent light-emitting diode chips and the periphery of the light-emitting diode chips; The first filling layer and the protective layer are sequentially located on the surface of the light-shielding layer and on the light-emitting side of the light-emitting diode chip. The first filling layer and the protective layer have light-transmitting windows, and each light-transmitting window exposes one of the light-emitting diode chips. The encapsulation board is located on the side of the protective layer away from the first filler layer.

[0006] Optionally, the side of the light-emitting diode chip closest to the packaging plate is flush with the side of the first filling layer furthest from the packaging plate.

[0007] Optionally, the thickness of the light-shielding layer is not less than the thickness of the light-emitting diode chip.

[0008] Optionally, the cross-section of the light-transmitting window perpendicular to the packaging plate is a trapezoid, the trapezoid including a longer first base and a shorter second base, the second base being closer to the light-emitting diode chip relative to the first base.

[0009] Optionally, the orthographic projection of the light-emitting surface of the LED chip onto the surface of the encapsulation board is located within the orthographic projection of the opening of the light-transmitting window near the LED chip onto the surface of the encapsulation board.

[0010] Optionally, the protective layer is a SiO film, a SiN film, or a composite film of SiO and SiN.

[0011] Optionally, the light-emitting chip further includes: a second filling layer and a first circuit layer; The second filling layer covers the side of the light-shielding layer away from the packaging plate and the back side of the light-emitting diode chip; The first circuit layer is located on the second fill layer, and the first circuit layer passes through the second fill layer and is electrically connected to the light-emitting diode chip.

[0012] On the other hand, a method for fabricating a light-emitting chip is provided, the method comprising: forming an adhesive layer on a substrate, wherein the surface of the substrate has a plurality of protrusions arranged at intervals, and the adhesive layer covers the surface of the substrate having the protrusions; A protective layer is formed, which covers the surface of the adhesive layer; The protective layer is patterned to form through holes corresponding to the plurality of bumps; Multiple light-emitting diode (LED) chips are transferred onto the adhesive layer, with each LED chip supported by one of the bumps. A first filler layer is formed on the protective layer, and the first filler layer is located between the plurality of bumps; A light-shielding layer is formed on the first filling layer, and the light-shielding layer is located between the plurality of light-emitting diode chips; Remove the substrate to obtain the integrated structure of the light-emitting diode chip; The integrated structure of the light-emitting diode chip is packaged using a transparent encapsulation plate, which is located on the side of the protective layer away from the first filling layer.

[0013] Optionally, the preparation method further includes: A photoresist mask is formed on the surface of a substrate using a photolithography process; Under the cover of the photoresist mask, the substrate is etched to form the plurality of bumps, thus obtaining the receiving substrate.

[0014] Optionally, the adhesive layer is a pyrolytic adhesive layer or a photolytic adhesive layer.

[0015] The beneficial effects of the technical solutions provided in this disclosure are: In this embodiment, multiple light-emitting diode (LED) chips are arranged at intervals, and a light-shielding layer is filled between adjacent LED chips and around the LED chips to block light emission from the sides of the LED chips. The first filling layer and protective layer located on the light-emitting side of the LED chips have light-transmitting windows, each exposing one LED chip. These windows guide the direction of light emission, causing the light emitted from the LEDs to exit along the windows, thereby reducing the amount of light emitted from the LEDs entering the light-emitting areas of adjacent LEDs and further preventing light crosstalk. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of this disclosure, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This is a schematic diagram of the structure of a light-emitting chip provided in an embodiment of the present disclosure; Figure 2 A flowchart illustrating a method for fabricating a light-emitting chip according to an embodiment of this disclosure; Figure 3 A flowchart illustrating a method for fabricating a light-emitting chip according to an embodiment of this disclosure; Figures 4 to 14 This is a schematic diagram illustrating the fabrication process of a light-emitting chip according to an embodiment of the present disclosure.

[0018] The attached figures are labeled as follows: 10: Protective layer; 20: First filler layer; 30: Light-shielding layer; 40: Light-emitting diode chip; 50: Encapsulation board; 60: Second filler layer; 70: First circuit layer; 80: Third filler layer; 90: Second circuit layer; 100: Receiving substrate; 101: Receiving adhesive layer; 102: Temporary substrate; 1001: Light-transmitting window; 1002: Through hole; 1003: First through hole; 1004: Second through hole; 2001: Bump. Detailed Implementation

[0019] To make the objectives, technical solutions, and advantages of this disclosure clearer, the embodiments of this disclosure will be described in further detail below with reference to the accompanying drawings.

[0020] Figure 1 This is a schematic diagram of the structure of a light-emitting chip provided in an embodiment of this disclosure. See also... Figure 1The light-emitting chip includes: a protective layer 10, a first filling layer 20, a light-shielding layer 30, multiple light-emitting diode chips 40, and a transparent encapsulation plate 50.

[0021] Multiple light-emitting diode (LED) chips 40 are arranged at intervals, and a light-shielding layer 30 fills the spaces between adjacent LED chips 40 and around the periphery of the LED chips 40. A first filling layer 20 and a protective layer 10 are sequentially located on the surface of the light-shielding layer 30 and on the light-emitting side of the LED chips 40. The first filling layer 20 and the protective layer 10 have light-transmitting windows 1001, each of which exposes one LED chip 40. A package plate 50 is located on the side of the protective layer 10 away from the first filling layer 20.

[0022] In this embodiment, multiple light-emitting diode (LED) chips are arranged at intervals, and a light-shielding layer is filled between adjacent LED chips and around the LED chips to block light emission from the sides of the LED chips. The first filling layer and protective layer located on the light-emitting side of the LED chips have light-transmitting windows, each exposing one LED chip. These windows guide the direction of light emission, causing the light emitted from the LEDs to exit along the windows, thereby reducing the amount of light emitted from the LEDs entering the light-emitting areas of adjacent LEDs and further preventing light crosstalk.

[0023] In another example, the protective layer 10 may also cover the sidewall of the first filling layer 20 near the light-transmitting window 1001. However, the protective layer 10 absorbs light at the light-transmitting window 1001, causing a decrease in the brightness of the light-emitting diode. Therefore, in this embodiment of the present disclosure, the protective layer 10 does not cover the sidewall of the first filling layer 20 near the light-transmitting window 1001.

[0024] In this embodiment of the disclosure, the first filler layer 20 may be a thermosetting material layer, such as an epoxy resin layer.

[0025] In this embodiment of the disclosure, the light-shielding layer 30 can be a black adhesive layer.

[0026] The black adhesive layer can be made of resin material mixed with black pigment.

[0027] In other embodiments, the light-shielding layer 30 may also be other layers with low light transmittance.

[0028] In this embodiment of the disclosure, the light-emitting chip may include at least two light-emitting diode chips 40 that emit light of different colors.

[0029] For example, the light-emitting chip may include a first light-emitting diode chip of a first emitting color, a second light-emitting diode chip of a second emitting color, and a third light-emitting diode chip of a third emitting color.

[0030] In practice, the first emitting color can be red, the second emitting color can be green, and the third emitting color can be blue.

[0031] In this embodiment, multiple light-emitting diode (LED) chips 40 are packaged as a single LED chip and then directly transferred onto a printed circuit board (PCB) substrate. This allows for the fabrication of any display product, such as outdoor displays, televisions, mobile phones, and other display-related products. When manufacturing a display product, each LED chip can serve as a pixel.

[0032] In this embodiment of the disclosure, transparency refers to a transmittance exceeding a set value, such as 90% or 95%. The encapsulation plate 50 can be a glass plate or a plastic plate, or other encapsulation plates with high hardness and high transmittance.

[0033] In this embodiment of the disclosure, the side of the light-emitting diode chip 40 near the packaging plate 50 is flush with the side of the first filling layer 20 away from the packaging plate 50.

[0034] In this implementation, the side of the LED chip closest to the packaging board is flush with the side of the first filling layer furthest from the packaging board. In this way, during the fabrication of the LED chip, the first filling layer can be fabricated first to provide the necessary structural support for the light-shielding layer, and then the light-shielding layer can be fabricated. This allows the light-shielding layer to completely cover the entire sidewall of the LED chip, thereby effectively preventing light from emanating from the side of the LED chip.

[0035] In this embodiment of the disclosure, the thickness of the light-shielding layer 30 is not less than the thickness of the light-emitting diode chip 40.

[0036] In this implementation, the thickness of the light-shielding layer is not less than the thickness of the LED chip. The light-shielding layer can completely cover the sidewall of the LED chip to prevent light from emanating from the side of the LED chip.

[0037] In this embodiment of the disclosure, the cross-section of the light-transmitting window 1001 perpendicular to the surface of the encapsulation plate 50 is a regular trapezoid. The regular trapezoid includes a longer first base side and a shorter second base side, with the second base side being closer to the light-emitting diode chip 40 relative to the first base side.

[0038] In this implementation, the light-transmitting window adopts the aforementioned pattern, which allows the sidewalls of the window to form outwardly sloping surfaces. This disperses the light emitted by the light-emitting chip more effectively, improving its viewing angle. Simultaneously, the sidewalls of the light-transmitting window still prevent light from shining into the light-emitting areas of adjacent LED chips, thus preventing light crosstalk.

[0039] In other embodiments, the cross-section of the light-transmitting window 1001 may also be other shapes, such as rectangles.

[0040] A rectangular shape can concentrate the light emitted by the LED chip, thereby increasing the brightness of the chip, but the viewing angle of the chip is reduced.

[0041] In this embodiment of the disclosure, the orthographic projection of the light-emitting surface of the LED chip onto the surface of the encapsulation plate 50 is located within the orthographic projection of the opening of the light-transmitting window 1001 near the LED chip 40 onto the surface of the encapsulation plate 50.

[0042] In this implementation, the orthographic projection of the light-emitting surface of the LED chip onto the surface of the encapsulation board is located within the orthographic projection of the opening of the light-transmitting window near the LED chip onto the surface of the encapsulation board. This means that the orthographic projection of the light-emitting surface of the LED chip onto the surface of the encapsulation board completely coincides with the orthographic projection of the opening of the light-transmitting window near the LED chip onto the surface of the encapsulation board, or that the orthographic projection of the light-emitting surface of the LED chip onto the surface of the encapsulation board is located inside the orthographic projection of the opening of the light-transmitting window near the LED chip onto the surface of the encapsulation board. This prevents the protective layer and filler layer from obstructing the light-emitting surface of the LED chip, thereby improving the brightness of the LED chip.

[0043] In this embodiment of the disclosure, the protective layer 10 is made of an inorganic insulating material. For example, the protective layer 10 can be a SiO film, a SiN film, or a SiO and SiN composite film.

[0044] In this implementation, the SiO layer, SiN layer, or SiO and SiN composite layer all have good insulation properties and can isolate moisture, thereby improving the yield of the light-emitting chip.

[0045] In this embodiment, the light-emitting chip further includes a second filling layer 60 and a first circuit layer 70. The second filling layer 60 covers the side of the light-shielding layer 30 away from the packaging plate 50 and the back side of the light-emitting diode chip 40. The first circuit layer 70 is located on the second filling layer 60 and passes through the second filling layer 60 to be electrically connected to the light-emitting diode chip 40.

[0046] In this implementation, the second filling layer and the first circuit layer can jointly cover the side of the light-emitting diode away from the light-emitting surface, which can prevent light from the sidewall of the light-emitting diode from escaping from the back of the light-emitting diode.

[0047] In this embodiment of the disclosure, the second filler layer 60 may be a thermosetting material layer, such as an epoxy resin layer.

[0048] For example, since there is a certain height difference between the LED chip electrode and the LED chip surface, the second filling layer can fill and flatten it, preparing for the subsequent formation of the metal circuit layer; in addition, the second filling layer can isolate the subsequent metal circuit layer and the light-shielding layer, avoiding direct contact between the metal circuit layer and the light-shielding layer, thereby avoiding adverse effects of water or heat processes involved in subsequent processes on the light-shielding layer.

[0049] In this embodiment of the disclosure, the first circuit layer 70 may be a single metal layer, such as an Al layer, a Cr layer, a Ti layer, a Ni layer, an Au layer, a Pt layer, an Al layer, or an AlCu layer; or, the first circuit layer 70 may be a metal stack, such as a metal stack composed of at least two of the Al layer, Cr layer, Ti layer, Ni layer, Au layer, Pt layer, Al layer, and AlCu layer.

[0050] In this embodiment of the disclosure, the first circuit layer 70 may include four electrodes, including three second electrodes and one first electrode. The first electrode is a collinear electrode of three light-emitting diode chips, and the second electrodes are respectively connected to the second electrodes of the three light-emitting diode chips.

[0051] For example, the first electrode is the negative electrode and the second electrode is the positive electrode.

[0052] The first electrode is a collinear electrode of the three light-emitting diode chips, that is, the first electrode of the first circuit layer 70 is simultaneously connected to the negative electrode of the three light-emitting diode chips to form a collinear negative electrode.

[0053] In this implementation, the first circuit layer can bring out the electrodes of the LED chip, making it convenient for the LED chip to be connected to the PCB substrate. Only 4 electrodes are needed to complete the three-color driving of the LED chip through this circuit.

[0054] In this embodiment, the light-emitting chip further includes a third filler layer 80 and a second circuit layer 90. The third filler layer 80 covers the surfaces of the second filler layer 60 and the first circuit layer 70 that are away from the package substrate 50. The second circuit layer 90 is located on the third filler layer 80 and is electrically connected to the first circuit layer 70 through the third filler layer 80.

[0055] In this embodiment of the disclosure, the third filler layer 80 may be a thermosetting material layer, such as an epoxy resin layer.

[0056] In this embodiment of the disclosure, the second circuit layer 90 can be a single metal layer, such as an Al layer, a Cr layer, a Ti layer, a Ni layer, an Au layer, a Pt layer, an Al layer, or an AlCu layer; or, the first circuit layer 70 can be a metal stack, such as a metal stack composed of at least two of the Al layer, Cr layer, Ti layer, Ni layer, Au layer, Pt layer, Al layer, and AlCu layer.

[0057] The material of the second circuit layer 90 may be the same as or different from the material of the first circuit layer 70.

[0058] In this embodiment of the disclosure, the second circuit layer 90 may include four electrode pads, which are electrically connected to three second electrodes and one first electrode in the first circuit layer 70, respectively.

[0059] In this embodiment of the disclosure, the surface area of ​​the electrode pads in the second circuit layer 90 is greater than the surface area of ​​the first electrode or the surface area of ​​the second electrode in the corresponding first circuit layer 70.

[0060] In this implementation, since the electrodes on the PCB substrate cannot be made as small as the electrodes on the LED chip, the second circuit layer can make the four electrodes led out from the first circuit layer larger, which facilitates the subsequent bonding of the LED chip to the PCB substrate.

[0061] Figure 2 A flowchart illustrating a method for fabricating a light-emitting chip according to an embodiment of this disclosure. See also... Figure 2 The method includes: S11. A receiving adhesive layer is formed on a receiving substrate, the surface of which has a plurality of protrusions arranged at intervals, and the receiving adhesive layer covers the surface of the receiving substrate on which the protrusions are provided.

[0062] S12. A protective layer is formed, which covers the surface of the adhesive layer.

[0063] S13. The protective layer is patterned to form through holes corresponding to the plurality of bumps.

[0064] S14. Transfer multiple light-emitting diode chips onto the adhesive layer, wherein one light-emitting diode chip is supported by one bump.

[0065] S15. A first filling layer is formed on the protective layer, the first filling layer being located between the plurality of bumps.

[0066] S16. A light-shielding layer is formed on the first filling layer, and the light-shielding layer is located between the plurality of light-emitting diode chips.

[0067] S17. Remove the receiving substrate to obtain the integrated structure of the light-emitting diode chip.

[0068] S18. The integrated structure of the light-emitting diode chip is packaged using a transparent encapsulation plate, wherein the transparent encapsulation plate is located on the side of the protective layer away from the first filling layer.

[0069] In this embodiment, multiple light-emitting diode (LED) chips are arranged at intervals, and a light-shielding layer is filled between adjacent LED chips and around the LED chips to block light emission from the sides of the LED chips. The first filling layer and protective layer located on the light-emitting side of the LED chips have light-transmitting windows, each exposing one LED chip. These windows guide the direction of light emission, causing the light emitted from the LEDs to exit along the windows, thereby reducing the amount of light emitted from the LEDs entering the light-emitting areas of adjacent LEDs and further preventing light crosstalk.

[0070] Figure 3 This is a flowchart illustrating a method for fabricating a light-emitting chip according to an embodiment of this disclosure. This fabrication method can be used to fabricate... Figure 1 The light-emitting chip in the middle. See also Figure 3 The method includes: S21. Fabricate a receiving substrate, such that the surface of the receiving substrate has multiple protrusions arranged at intervals.

[0071] In this embodiment of the disclosure, the multiple bumps arranged at intervals can be divided into multiple groups, and each group of bumps corresponds to a light-emitting chip in a subsequent step.

[0072] In one example, step S21 includes: The first step is to coat a thin film of photoresist on the surface of the substrate.

[0073] The second step is to expose and develop the photoresist film to form a photoresist mask.

[0074] The third step involves etching the substrate under the cover of a photoresist mask to form multiple bumps, thus obtaining the receiving substrate.

[0075] The fourth step is to remove the photoresist mask.

[0076] In this embodiment of the disclosure, the receiving substrate can be made of materials such as sapphire or quartz glass.

[0077] For example, the substrate is made of sapphire.

[0078] Figure 4 This is a schematic diagram illustrating the fabrication process of a light-emitting chip according to an embodiment of this disclosure. See also... Figure 4 The surface of the substrate 100 has a plurality of protrusions 2001 arranged at intervals.

[0079] S22. A receiving adhesive layer is formed on the receiving substrate, and the receiving adhesive layer covers the surface of the receiving substrate with protrusions.

[0080] In this embodiment of the disclosure, the adhesive layer is a pyrolytic adhesive layer or a photolytic adhesive layer, covering the entire surface of the substrate.

[0081] In this implementation, the adhesive layer is either a pyrolytic adhesive layer or a photolytic adhesive layer, both of which facilitate decomposition and leave no trace after peeling, making subsequent peeling convenient.

[0082] Figure 5 This is a schematic diagram illustrating the fabrication process of a light-emitting chip according to an embodiment of this disclosure. See also... Figure 5 The adhesive layer 101 covers the surface of the substrate 100 where the bumps 2001 are provided.

[0083] S23. A protective layer is formed, wherein the protective layer has through holes corresponding to multiple bumps.

[0084] In one example, step S23 includes: The first step is to form a protective film on the surface of the adhesive layer.

[0085] In this embodiment of the disclosure, a protective film is deposited by plasma-enhanced chemical vapor deposition (PECVD).

[0086] The second step is to form a photoresist film on the protective film.

[0087] The third step is to expose and develop the photoresist film to form a photoresist mask.

[0088] The fourth step involves patterning the protective film under the cover of a photoresist mask to form vias corresponding to multiple bumps, thereby obtaining the protective layer.

[0089] In this embodiment, dry etching is used to pattern the protective film, and the etching gas can be CF4.

[0090] In this implementation, CF4 has no significant etching effect on the adhesive layer, thus improving the yield of the light-emitting chip.

[0091] Step 5: Remove the photoresist mask.

[0092] In this embodiment, the through-hole exposes the protrusion, and the projection of the protrusion onto the bottom surface of the receiving substrate is located within the projection of the through-hole onto the bottom surface of the receiving substrate. The bottom surface of the receiving substrate is the side opposite to the protruding surface.

[0093] Figure 6 This is a schematic diagram illustrating the fabrication process of a light-emitting chip according to an embodiment of this disclosure. See also... Figure 6 The protective layer 10 covers the surface of the receiving adhesive layer 101 (excluding the surface of the receiving adhesive layer 101 at the sidewall of the protrusion 2001), and the protective layer 10 includes through holes 1002 corresponding to the plurality of protrusions 2001.

[0094] In another example, the protective layer 10 may also cover the surface of the adhesive layer 101 on the sidewall of the bump 2001. However, the protective layer 10 on the sidewall of the bump 2001 absorbs light, causing a decrease in the brightness of the light-emitting diode. Therefore, in this embodiment of the disclosure, the surface of the adhesive layer 101 on the sidewall of the bump 2001 is not covered.

[0095] In another example, the adhesive layer can be patterned to form through-holes before the protective layer is formed.

[0096] For example, patterning the adhesive layer to form through-holes before forming the protective layer includes: The first step is to form a photoresist film on the adhesive layer.

[0097] The second step is to expose and develop the photoresist film to form a photoresist mask.

[0098] The third step involves patterning the adhesive layer under the cover of a photoresist mask to form through holes corresponding to multiple bumps.

[0099] In this embodiment of the disclosure, if the adhesive layer is a pyrolytic adhesive, the adhesive layer is patterned by heating to form through holes.

[0100] In this embodiment of the disclosure, if the adhesive layer is a photolytic adhesive, the adhesive layer is patterned by irradiation to form through holes.

[0101] In this implementation, the adhesive layer is patterned to form through holes before the protective layer is formed. These through holes can be regarded as etching points, which facilitates the subsequent opening of holes in the protective layer.

[0102] S24. Transfer multiple LED chips onto the adhesive layer, with each LED chip supported by a bump.

[0103] In this embodiment of the disclosure, three light-emitting diode chips can be grouped together. The three light-emitting diode chips may include a first light-emitting diode chip of a first emission color, a second light-emitting diode chip of a second emission color, and a third light-emitting diode chip of a third emission color. In a subsequent group of light-emitting diode chips, the group of light-emitting diode chips can be divided into an independent light-emitting chip.

[0104] Figure 7 This is a schematic diagram illustrating the fabrication process of a light-emitting chip according to an embodiment of this disclosure. See also... Figure 7 Multiple light-emitting diode chips 40 are located on the adhesive layer 101, and each light-emitting diode chip 40 is supported by a bump 2001.

[0105] S25. Create a first fill layer on the protective layer, the first fill layer being located between multiple bumps.

[0106] In this embodiment of the disclosure, a first filler layer is spin-coated between a plurality of bumps.

[0107] In this embodiment of the disclosure, the raised surface of the receiving substrate is flush with the side of the first filling layer away from the protective layer.

[0108] In this implementation, the raised surface of the substrate is flush with the side of the first filling layer away from the protective layer. In this way, during the fabrication of the light-emitting chip, the first filling layer can be fabricated first to provide the necessary structural support for the light-shielding layer, and then the light-shielding layer can be fabricated. This allows the light-shielding layer to completely cover the entire sidewall of the light-emitting diode chip, thereby effectively preventing light from emanating from the side of the light-emitting diode chip.

[0109] Figure 8 This is a schematic diagram illustrating the fabrication process of a light-emitting chip according to an embodiment of this disclosure. See also... Figure 8 The first filling layer 20 is located on the protective layer 10 and is located between a plurality of bumps 2001.

[0110] S26. A light-shielding layer is formed on the first filling layer, and the light-shielding layer is located between multiple light-emitting diode chips.

[0111] Figure 9 This is a schematic diagram illustrating the fabrication process of a light-emitting chip according to an embodiment of this disclosure. See also... Figure 9 The light-shielding layer 30 is located on the first filling layer 20 and is located between multiple light-emitting diode chips 40.

[0112] S27. Fabricate a second filling layer on the light-shielding layer and the light-emitting diode chip.

[0113] In one example, step S27 includes: The first step is to form a filling film on the light-shielding layer and the light-emitting diode chip.

[0114] The second step is to perform photolithography on the filling film to form a second filling layer, which includes a plurality of first through holes corresponding to the light-emitting diode chip.

[0115] Figure 10 This is a schematic diagram illustrating the fabrication process of a light-emitting chip according to an embodiment of this disclosure. See also... Figure 10 The second filling layer 60 is located on the light-shielding layer 30 and the light-emitting diode chip 40. The second filling layer 60 includes a plurality of first through holes 1003 corresponding to the light-emitting diode chip 40.

[0116] S28. A first circuit layer is fabricated on the second fill layer, and the first circuit layer passes through the second fill layer and is electrically connected to the light-emitting diode chip.

[0117] In one example, step S28 includes: The first step is to form a photoresist film on the second filler layer.

[0118] The second step is to expose and develop the photoresist film to form a photoresist mask with grooves.

[0119] The third step is to vapor deposit metal in the groove and on the photoresist mask.

[0120] The fourth step is to remove the photoresist mask and the metal on the photoresist mask to form the first circuit layer.

[0121] Figure 11 This is a schematic diagram illustrating the fabrication process of a light-emitting chip according to an embodiment of this disclosure. See also... Figure 11 The first circuit layer 70 is located on the second fill layer 60 and is electrically connected to the light-emitting diode chip 40 through the first through-hole 1003.

[0122] S29. Fabricate a third filling layer on the light-shielding layer and the light-emitting diode chip.

[0123] In one example, step S29 includes: The first step is to form a filler film on the first filler layer and the first circuit layer.

[0124] The second step is to perform photolithography on the filling film to form a third filling layer, which includes multiple second vias corresponding to the first circuit layer.

[0125] Figure 12 This is a schematic diagram illustrating the fabrication process of a light-emitting chip according to an embodiment of this disclosure. See also... Figure 12 The third filling layer 80 is located on the second filling layer 60 and the first circuit layer 70. The third filling layer 80 includes a plurality of second vias 1004 corresponding to the light-emitting diode chip 40.

[0126] S30. A second circuit layer is fabricated on the third filler layer, and the second circuit layer passes through the third filler layer and is electrically connected to the first circuit layer.

[0127] In one example, step S30 includes: The first step is to form a photoresist film on the third filler layer.

[0128] The second step involves exposing and developing the photoresist film to form a photoresist mask with multiple grooves.

[0129] The third step is to vapor deposit metal onto the groove and photoresist mask.

[0130] The fourth step is to remove the photoresist mask and the metal on the photoresist mask to form the second circuit layer.

[0131] Figure 13This is a schematic diagram illustrating the fabrication process of a light-emitting chip according to an embodiment of this disclosure. See also... Figure 13 The second circuit layer 90 is located on the third filler layer 80 and is electrically connected to the first circuit layer 70 through the second through hole 1004.

[0132] S31. Transfer the integrated structure of the light-emitting diode chip to a temporary substrate and remove the receiving substrate.

[0133] In this embodiment of the disclosure, if the adhesive layer is a pyrolytic adhesive, the substrate is removed by heating.

[0134] In this embodiment of the disclosure, if the adhesive layer is a photolytic adhesive, the substrate is removed by light irradiation.

[0135] Figure 14 This is a schematic diagram illustrating the fabrication process of a light-emitting chip according to an embodiment of this disclosure. See also... Figure 14 ,exist Figure 13 Based on this, the substrate 100 and the adhesive layer 101 were removed, and the light-emitting diode chip integrated structure was located on the temporary substrate 102.

[0136] 32. Etch the integrated structure of the LED chip to divide it into independent LED chips.

[0137] In one example, step S32 includes: The first step is to form a photoresist film on the protective layer.

[0138] The second step is to expose and develop the photoresist film to form a photoresist mask.

[0139] The third step involves etching the integrated structure of the LED chip under the cover of a photoresist mask to form grooves. The bottom of the grooves is located on a temporary substrate, and the grooves divide the integrated structure of the LED chip into multiple independent light-emitting chips.

[0140] The fourth step is to remove the photoresist mask.

[0141] S33. A transparent encapsulation board is used to encapsulate the light-emitting chip. The transparent encapsulation board is located on the side of the protective layer away from the first filling layer, and the temporary substrate is removed.

[0142] In one example, step S33 includes: The first step is to apply a layer of adhesive to the surface of the transparent encapsulation board.

[0143] The second step is to connect the adhesive-coated surface of the transparent encapsulation board to the protective layer of the light-emitting chip.

[0144] In another example, after applying an adhesive layer to the surface of the transparent encapsulation board, the adhesive can be patterned, and grooves can be created on the surface of the transparent encapsulation board. The grooves correspond to the light-transmitting windows.

[0145] In one example, S33 may also include: cutting multiple light-emitting chips encapsulated with transparent packaging plates into individual light-emitting chips by means of laser cutting or the like.

[0146] The above description is merely an optional embodiment of this disclosure and is not intended to limit this disclosure. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this disclosure should be included within the protection scope of this disclosure.

Claims

1. A light-emitting chip, characterized in that, The light-emitting chip includes: a protective layer (10), a first filling layer (20), a light-shielding layer (30), a plurality of light-emitting diode chips (40) and a transparent encapsulation plate (50). The plurality of light-emitting diode chips (40) are arranged at intervals, and the light-shielding layer (30) fills the space between adjacent light-emitting diode chips (40) and the periphery of the light-emitting diode chips (40); The first filling layer (20) and the protective layer (10) are located on the surface of the light-shielding layer (30) and on the light-emitting side of the light-emitting diode chip (40). The first filling layer (20) and the protective layer (10) have light-transmitting windows (1001), and each light-transmitting window (1001) exposes one of the light-emitting diode chips (40). The encapsulation plate (50) is located on the side of the protective layer (10) away from the first filling layer (20).

2. The light-emitting chip according to claim 1, characterized in that, The side of the light-emitting diode chip (40) closest to the encapsulation plate (50) is flush with the side of the first filling layer (20) furthest from the encapsulation plate (50).

3. The light-emitting chip according to claim 2, characterized in that, The thickness of the light-shielding layer (30) is not less than the thickness of the light-emitting diode chip (40).

4. The light-emitting chip according to any one of claims 1 to 3, characterized in that, The cross section of the light-transmitting window (1001) perpendicular to the encapsulation plate (50) is a trapezoid, which includes a longer first base and a shorter second base, with the second base being closer to the light-emitting diode chip (40) relative to the first base.

5. The light-emitting chip according to claim 4, characterized in that, The light-emitting surface of the LED chip is projected onto the surface of the encapsulation plate (50), and the opening of the light-transmitting window (1001) near the LED chip (40) is within the projected surface of the encapsulation plate (50).

6. The light-emitting chip according to claim 1, characterized in that, The protective layer (10) is a SiO film, a SiN film, or a SiO and SiN composite film.

7. The light-emitting chip according to any one of claims 1 to 6, characterized in that, The light-emitting chip further includes: a second filling layer (60) and a first circuit layer (70); The second filling layer (60) covers the side of the light-shielding layer (30) away from the encapsulation plate (50) and the back side of the light-emitting diode chip (40); The first line layer (70) is located on the second fill layer (60), and the first line layer (70) passes through the second fill layer (60) and is electrically connected to the light-emitting diode chip (40).

8. A method for fabricating a light-emitting chip, characterized in that, The method includes: An adhesive layer is formed on a receiving substrate, the surface of which has a plurality of protrusions arranged at intervals, and the adhesive layer covers the surface of the receiving substrate on which the protrusions are located. A protective layer is formed, which covers the surface of the adhesive layer; The protective layer is patterned to form through holes corresponding to the plurality of bumps; Multiple light-emitting diode (LED) chips are transferred onto the adhesive layer, with each LED chip supported by one of the bumps. A first filler layer is formed on the protective layer, and the first filler layer is located between the plurality of bumps; A light-shielding layer is formed on the first filling layer, and the light-shielding layer is located between the plurality of light-emitting diode chips; Remove the substrate to obtain the integrated structure of the light-emitting diode chip; The integrated structure of the light-emitting diode chip is packaged using a transparent encapsulation plate, which is located on the side of the protective layer away from the first filling layer.

9. The preparation method according to claim 8, characterized in that, The preparation method further includes: A photoresist mask is formed on the surface of a substrate using a photolithography process; Under the cover of the photoresist mask, the substrate is etched to form the plurality of bumps, thus obtaining the receiving substrate.

10. The preparation method according to claim 8 or 9, characterized in that, The adhesive layer is a pyrolytic adhesive layer or a photolytic adhesive layer.

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