Balanced and unbalanced magnetic field coupled cylindrical polyhedron rotary magnetron sputtering device

Abstract

The invention provides a balanced and unbalanced magnetic field coupled cylindrical polyhedron rotary magnetron sputtering device, and relates to the technical field of magnetron sputtering, the balanced and unbalanced magnetic field coupled cylindrical polyhedron rotary magnetron sputtering device comprises a support and an outer cylinder, a bearing part is arranged in the outer cylinder, a plurality of target materials are arranged on the bearing part, and a strip-shaped permanent magnet is arranged in the bearing part; an opening is formed in the side part of the outer cylinder; the permanent magnet is opposite to one target material and both face the opening; in the sputtering process, the second driving part enables the permanent magnet to move in the first direction so as to switch the relative position of the permanent magnet and the target facing the opening in the width direction, and the high-intensity magnetic field can change the position of the plasma relative to the surface of the target, so that the position of the groove formed in the surface of the target is changed, and the utilization rate of the target is increased; the frequency of target material replacement after shutdown is reduced, and continuous production is facilitated. The first driving part can switch the target materials facing the opening, a single-layer or multi-layer composite coating can be formed, meanwhile, the frequency of target material replacement after shutdown is further reduced, and continuous production is facilitated.

Description

Technical Field

[0001] This invention relates to the field of magnetron sputtering technology, and in particular to a cylindrical polyhedron rotating magnetron sputtering device with balanced and unbalanced magnetic field coupling. Background Technology

[0002] Magnetron sputtering, a key technology in physical vapor deposition (PVD), works by using the deposition material as the target cathode. In a vacuum environment, argon ions bombard the target surface to generate cathode sputtering, causing target atoms to deposit in solid form onto the workpiece surface to form a thin film. Since its practical application, magnetron sputtering has become the mainstream method for preparing functional thin films of metals and compounds in industry due to its comprehensive advantages in deposition rate, film quality, and material versatility. It is widely used in the preparation of functional coatings such as integrated circuit metal wiring, optical anti-reflection and filter films, tool surface hardening coatings, and energy-saving glass for automobiles and buildings.

[0003] In existing planar magnetron sputtering equipment, the permanent magnet array on the back of the target is spatially fixed. This results in the plasma being confined to a specific area on the target surface by a strong magnetic field during sputtering, thus forming localized grooves on the target surface. This leads to low target utilization and requires downtime for replacement.

[0004] The information disclosed in the background section of this invention is intended only to enhance the understanding of the general background of this invention, and should not be construed as an admission or in any way implying that such information constitutes prior art known to those skilled in the art. Summary of the Invention

[0005] Therefore, it is necessary to provide a cylindrical polyhedral rotating magnetron sputtering device that balances the coupling of unbalanced magnetic fields, addressing the problems existing in current magnetron sputtering devices.

[0006] The above objectives are achieved through the following technical solutions: A cylindrical polyhedral rotating magnetron sputtering device with balanced and unbalanced magnetic field coupling includes a support and an outer cylinder mounted on the support. A carrier is provided inside the outer cylinder, and multiple plate-shaped targets are evenly distributed along the circumference of the outer cylinder on the carrier. The thickness direction of the targets is parallel to the radial direction of the outer cylinder. A receiving space is formed within the carrier, and strip-shaped permanent magnets are disposed within the receiving space. The length directions of both the targets and the permanent magnets are parallel to the axis of the outer cylinder. Multiple permanent magnets are evenly distributed along a first direction, which is parallel to the width direction of the target facing the opening. The side of the outer cylinder has an opening, and a permanent magnet is opposite to one of the targets, with both facing the opening. The support is provided with a first driving unit and a second driving unit. The first driving unit is used to rotate the carrier along the circumference of the outer cylinder to switch the target facing the opening. The second driving unit is used to move the permanent magnet along the first direction to switch the relative position of the permanent magnet and the target facing the opening.

[0007] Furthermore, all permanent magnets are able to move synchronously relative to the support along a second direction, which is parallel to the thickness direction of the target material facing the opening; the support is provided with an elastic element, which is used to make all permanent magnets tend to move synchronously toward the target material along the second direction.

[0008] Furthermore, the carrier is equipped with a flow channel assembly filled with water to dissipate heat from the target material.

[0009] Furthermore, the carrier includes a first partition and a second partition. The target material, the first partition, and the second partition are arranged and in contact in sequence. The first partition is made of a thermally conductive material, and the second partition is made of a thermally insulating material and can contact the permanent magnet. The flow channel assembly includes a first flow channel opened in the first partition and a second flow channel opened in the second partition. The first flow channel and the second flow channel have a first end and a second end in the axial direction of the outer cylinder. The first end of the first flow channel has a liquid inlet, and the first end of the second flow channel has a liquid outlet. The second end of the first flow channel is connected to the second end of the second flow channel.

[0010] Furthermore, the first flow channel and the second flow channel are both arranged symmetrically about the first plane, which is perpendicular to the axis of the outer cylinder and passes through the middle of the outer cylinder in its axial direction.

[0011] Furthermore, the carrier also includes a pressure frame, which is used to fix the target material on the first partition.

[0012] Furthermore, the directions of the first and second flow channels are both parallel to the length direction of the target material, and multiple first and second flow channels are evenly distributed along the width direction of the target material. The number of first and second flow channels is equal and greater than the number of permanent magnets. The support is also provided with an adjustment part. When the second drive part moves the permanent magnet along the first direction, the adjustment part opens the liquid inlet and liquid outlet located between two adjacent permanent magnets and closes the other liquid inlets and liquid outlets.

[0013] Furthermore, the end of the carrier is provided with multiple end plates, each corresponding to a multiple target material. Each end plate has multiple first connecting holes and multiple second connecting holes. The first connecting holes are connected to multiple liquid inlets, and the second connecting holes are connected to multiple liquid outlets. The adjustment unit includes a rotating ring rotatably mounted on a bracket. The sidewall of the rotating ring has multiple first control holes and multiple second control holes. The number of first and second control holes is equal and one less than the number of permanent magnets. The sidewall of the rotating ring fits against the sidewall of the end plate, allowing the first control holes to communicate with the first connecting holes and the second control holes to communicate with the second connecting holes. When the second driving unit moves the permanent magnets along a first direction, the rotating ring rotates, allowing the first control holes to communicate with the first connecting holes located between two adjacent permanent magnets, and the second control holes to communicate with the second connecting holes located between two adjacent permanent magnets.

[0014] Furthermore, each of the first connecting holes is provided with a flow equalizing element, which is used to ensure that the water flow rate entering all the first flow channels is equal.

[0015] Furthermore, both the first control hole and the second control hole are elongated strips in the circumferential direction of the rotating ring, with the length of the first control hole being greater than the diameter of the first connecting hole, and the length of the second control hole being greater than the diameter of the first connecting hole.

[0016] The present invention has at least the following beneficial effects: During sputtering, the second drive unit moves the permanent magnet along the first direction to switch the relative positions of the permanent magnet and the target material facing the opening in its width direction. The strong magnetic field can change the position of the plasma relative to the target surface, thereby changing the position where grooves are formed on the target surface, improving the utilization rate of the target material, reducing the number of downtimes for target replacement, and facilitating continuous production. In addition, the first drive unit can switch the target material facing the opening, enabling the formation of single-layer or multi-layer composite coatings, while further reducing the number of downtimes for target replacement, facilitating continuous production. Attached Figure Description

[0017] Figure 1 A schematic diagram of the structure of a cylindrical polyhedron rotating magnetron sputtering device with balanced and unbalanced magnetic field coupling provided in an embodiment of the present invention; Figure 2 for Figure 1 The front view; Figure 3 for Figure 2 Sectional view along axis AA; Figure 4 for Figure 1 Exploded view of the parts; Figure 5 for Figure 4 A magnified view of a section at point B in the middle; Figure 6 This is a partial structural diagram of the second drive unit; Figure 7 for Figure 6 A magnified view of a section at point C; Figure 8 for Figure 2 DD section view; Figure 9 for Figure 8 A magnified view of a section at point E in the middle.

[0018] in: 101. Outer cylinder; 102. Target material; 103. Permanent magnet; 104. Opening; 201. Bearing component; 202. First motor; 203. First gear; 204. First gear ring; 205. Center frame; 206. Second motor; 207. Second gear; 208. Rack; 209. Elastic component; 210. Slide rod; 211. First plate; 212. Second plate; 213. Connecting plate; 214. First partition; 215. Second partition; 216. First flow channel; 217. Second flow channel; 218. Pressure frame; 220. End plate; 221. First connecting hole; 222. Second connecting hole; 223. Rotary ring; 224. First control hole; 225. Second control hole; 226. Second gear ring; 227. Liquid passage shell; 228. Flow equalization component; 229. Through hole. Detailed Implementation

[0019] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below through embodiments and in conjunction with the accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

[0020] The component designations used in this document, such as "first" and "second," are merely for distinguishing the described objects and do not have any sequential or technical meaning. The terms "connection" and "linkage" used in this invention, unless otherwise specified, include both direct and indirect connections (linkages). It should be understood that the terms "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," and "counterclockwise," indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings and are used only for the convenience of describing the invention and simplifying the description. They do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0021] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "over," and "on top" of the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0022] like Figures 1 to 9As shown, this embodiment of the invention provides a cylindrical polyhedral rotating magnetron sputtering device for balancing unbalanced magnetic field coupling (hereinafter referred to as the magnetron sputtering device), including a support (not shown) and an outer cylinder 101 mounted on the support. A support member 201 is provided inside the outer cylinder 101. Multiple plate-shaped targets 102 are evenly distributed along the circumference of the outer cylinder 101 on the support member 201. The thickness direction of the targets 102 is parallel to the radial direction of the outer cylinder 101. A receiving space is formed within the support member 201, and strip-shaped permanent magnets 103 are provided within the receiving space. The length directions of the targets 102 and the permanent magnets 103 are both parallel to the axis of the outer cylinder 101. Multiple permanent magnets 103 are evenly distributed along a first direction, which is parallel to the width direction of the targets 102 facing the opening 104. Figure 3 In the middle, the opening 104 is located on the right side, and the first direction is the up and down direction; the side of the outer cylinder 101 has the opening 104, the permanent magnet 103 is opposite to one of the target materials 102 and both face the opening 104; the support is provided with a first driving part and a second driving part, the first driving part is used to make the carrier 201 rotate around the circumference of the outer cylinder 101 to switch the target material 102 facing the opening 104; the second driving part is used to make the permanent magnet 103 move along the first direction to switch the relative position of the permanent magnet 103 and the target material 102 facing the opening 104.

[0023] During sputtering, the second drive unit moves the permanent magnet 103 along the first direction to switch the relative positions of the permanent magnet 103 and the target 102 facing the opening 104 in its width direction. The strong magnetic field can change the position of the plasma relative to the surface of the target 102, thereby changing the position where the grooves are formed on the surface of the target 102, improving the utilization rate of the target 102, reducing the number of downtimes to replace the target 102, and facilitating continuous production. In addition, the first drive unit can switch the target 102 facing the opening 104, which can form single-layer or multi-layer composite coatings, while further reducing the number of downtimes to replace the target 102, and facilitating continuous production.

[0024] The support is located within the vacuum chamber, and the permanent magnet 103 forms a confinement magnetic field with a specific configuration in front of the target 102. The magnetron sputtering apparatus also includes a pump assembly for vacuuming, an intake system for introducing a working gas (such as argon), a power supply connected to the target 102 to apply a negative high voltage, and a substrate holder (located in front of the target 102, i.e., ...) for carrying the substrate. Figure 3(Right side of target 102). The working process typically includes a preparation stage, a plasma generation and sputtering stage, and a thin film deposition stage. In the preparation stage, the vacuum chamber is closed, the working vacuum level is achieved using a pump set, and then an appropriate amount of argon gas is introduced. In the plasma generation and sputtering stage, a negative high voltage is applied to the target 102. Electrons are accelerated under the influence of the electric field and ionize due to collisions with argon atoms. The magnetic field generated by the permanent magnet 103 confines the electrons to a region near the surface of the target 102, forming a high-density plasma. Argon ions bombard the surface of the target 102 at high speed under the influence of the electric field, causing the atoms or molecules of the target 102 to be sputtered out. In the thin film deposition stage, the sputtered target 102 particles pass through the opening 104 of the outer cylinder 101 and are finally deposited onto the surface of the substrate placed opposite, gradually accumulating to form the desired thin film. The structure and working principle of the above magnetron sputtering device are existing technologies and will not be elaborated here.

[0025] The targets 102 are plate-shaped and form a regular polygon. The number of targets 102 is at least three, for example... Figure 3 Three target materials 102 together form an equilateral triangle, creating an equilateral triangular accommodating space inside. The first drive unit includes a first motor 202, a first gear 203, and a first gear ring 204. The first motor 202 is equipped with a corresponding power supply and control module to control start-up, shutdown, and operating conditions. The output end of the first motor 202 is fixed to the first gear 203, which meshes with the first gear ring 204. The first gear ring 204 is located outside the support member 201 and coaxially arranged with the outer cylinder 101. The output end of the first motor 202 drives the first gear 203 to rotate, causing the first gear ring 204 and the support member 201 to rotate circumferentially along the outer cylinder 101, thereby switching the target material 102 facing the opening 104. In addition, two sets of the first drive unit can be symmetrically arranged to ensure the stability of the support member 201 during rotation.

[0026] Among them, see Figure 6 and Figure 7The support frame includes a central frame 205. The second drive unit includes a second motor 206, a second gear 207, and a rack 208. The second motor 206 is equipped with a corresponding power supply and control module to control start-up, shutdown, and operating conditions. The output end of the second motor 206 may be equipped with a transmission mechanism, which is connected to the second gear 207. The second gear 207 and the rack 208 mesh, and the rack 208 is slidably connected to the central frame 205 in the first direction. The permanent magnet 103 is disposed on the rack 208. The output end of the second motor 206 drives the second gear 207 to rotate, which in turn drives the rack 208 and the permanent magnet 103 to move along the first direction, thereby switching the relative position of the permanent magnet 103 and the target material 102 facing the opening 104. Two sets of the second gear 207 and rack 208 may be provided, located at both ends of the central frame 205 in the axial direction of the outer cylinder 101, to improve the stability of the movement of the rack 208 and the permanent magnet 103 along the first direction.

[0027] Optionally, a drive system and a control system can be set to continuously change the spatial orientation of the magnetic poles of the permanent magnet 103 relative to the surface of the fixed target 102, thereby changing the distribution and intensity of the magnetic field lines on the surface of the target 102. This allows for continuous and smooth switching or intermediate state adjustment between two modes: a "balanced magnetic field" (where the magnetic field lines are closed near the surface of the target 102, and the plasma is tightly confined) and a "non-balanced magnetic field" (where some magnetic field lines extend to the substrate direction, which can guide some plasma toward the substrate). This helps to achieve nanoscale coatings, improve the fineness and performance of the coating, and ensure the ionization rate of the target 102.

[0028] In one embodiment, see [link to relevant documentation]. Figure 3 and Figure 7 All permanent magnets 103 can move synchronously relative to the support along a second direction, which is parallel to the thickness direction of the target material 102 facing the opening 104. Figure 3 In the middle, the opening 104 is located on the right side, and the second direction is the left and right direction; the support is provided with an elastic element 209, which is used to make all permanent magnets 103 have a tendency to move synchronously towards the target material 102 along the second direction.

[0029] When the first drive unit causes the carrier 201 to rotate circumferentially along the outer cylinder 101 to switch the target 102 facing the opening 104, the permanent magnet 103 can adapt to the switching process of the target 102. At the same time, the elastic member 209 can ensure that all permanent magnets 103 are close to and in contact with the target 102, and ensure that the distance between the permanent magnets 103 and the target 102 is the same, thereby ensuring the sputtering process.

[0030] Among them, see Figure 7A sliding rod 210 is slidably mounted on the central frame 205, with its sliding direction parallel to the second direction. A first plate 211 is located at the end of the sliding rod 210. A second plate 212 is slidably mounted on the first plate 211 via a slide rail structure, with its sliding direction parallel to the first direction. A permanent magnet 103 is mounted on the second plate 212, and the second plate 212 is slidably connected to the rack 208 via the slide rail structure, with its sliding direction parallel to the second direction. The output of the second motor 206 drives the second gear 207 to rotate, causing the rack 208, the second plate 212, and the permanent magnet 103 to move synchronously along the first direction. Additionally, an elastic element 209, a compression spring, is sleeved on the sliding rod 210. The elastic element 209 is located between the central frame 205 and the first plate 211, so that the first plate 211, the second plate 212, and all the permanent magnets 103 tend to move synchronously towards the target material 102 along the second direction. Two sets of slide rod 210, elastic element 209 and the above-mentioned slide rail structure can be set, respectively located at both ends of the center frame 205 in the axial direction of the outer cylinder 101, so as to improve the stability of the first plate 211, the second plate 212 and all permanent magnets 103 when they approach the target material 102 along the second direction.

[0031] In one embodiment, the carrier 201 is provided with a flow channel assembly filled with water to dissipate heat from the target 102, thereby ensuring the stable operation of the magnetron sputtering device to a certain extent, improving the service life of the target 102 and maintaining process consistency.

[0032] In one embodiment, see [link to relevant documentation]. Figure 3 The carrier 201 includes a first partition 214 and a second partition 215. The target 102, the first partition 214 and the second partition 215 are arranged and in contact in sequence. The first partition 214 is made of a thermally conductive material, and the second partition 215 is made of a thermally insulating material and can contact the permanent magnet 103. The flow channel assembly includes a first flow channel 216 opened in the first partition 214 and a second flow channel 217 opened in the second partition 215. The first flow channel 216 and the second flow channel 217 have a first end and a second end in the axial direction of the outer cylinder 101. The first end of the first flow channel 216 has a liquid inlet, and the first end of the second flow channel 217 has a liquid outlet. The second end of the first flow channel 216 is connected to the second end of the second flow channel 217.

[0033] Water enters the first flow channel 216 through the inlet and, together with the first baffle 214 made of thermally conductive material, dissipates heat from the target material 102. The water that absorbs heat from the target material 102 enters the second flow channel 217 and is discharged from the outlet, thus completing the heat dissipation process for the target material 102. The water closest to the target material 102 is always at a low temperature, while the heated water moves away from the target material 102, enhancing the heat dissipation effect on the target material 102.

[0034] The first partition 214 can be made of industrial pure iron and may also include a magnetic equalization plate. Both the first partition 214 and the magnetic equalization plate require electroplating for rust prevention. The second partition 215 can be made of polytetrafluoroethylene. A chiller is also mounted on the support frame. The chiller supplies water to the inlet and receives water discharged from the outlet. The structure and working principle of the chiller are existing technologies and will not be described in detail here.

[0035] The carrier 201 also includes a connecting plate 213, and two adjacent sets of first partitions 214 and second partitions 215 are fixed relative to each other by the connecting plate 213. It can be understood that when the carrier 201 rotates circumferentially along the outer cylinder 101 to switch the target material 102 facing the opening 104, the permanent magnet 103 will move in the second direction without affecting the switching process of the target material 102.

[0036] In other embodiments not shown, a water supply channel may be provided only within the carrier 201, with an inlet and an outlet at each end of the channel, which can also dissipate heat from the target material 102.

[0037] In one embodiment, the first flow channel 216 and the second flow channel 217 are symmetrically arranged in two sets about a first plane, which is perpendicular to the axis of the outer cylinder 101 and passes through the middle of the outer cylinder 101 in its axial direction.

[0038] Water in one of the first flow channels 216 flows only to the middle of the outer cylinder 101 in its axial direction, that is, it only dissipates heat on half of the target material 102, before entering the second flow channel 217 and being discharged from the outlet; while water in the other first flow channel 216 flows only to the middle of the outer cylinder 101 in its axial direction, that is, it only dissipates heat on the other half of the target material 102, before entering the second flow channel 217 and being discharged from the outlet, thereby further improving the heat dissipation effect on the target material 102.

[0039] Among them, see Figure 4 and Figure 5 The device has two sets of first flow channels 216 and two sets of second flow channels 217 symmetrically arranged on the left and right sides. Water in the left first flow channel 216 flows to the right to the middle, dissipating heat on the left side of the target 102, then enters the left second flow channel 217 and flows to the left, exiting from the outlet. Water in the right first flow channel 216 flows to the left to the middle, dissipating heat on the right side of the target 102, then enters the right second flow channel 217 and flows to the right, exiting from the outlet. Two chillers are provided. One chiller supplies water to the inlet of the left first flow channel 216 and can receive water discharged from the outlet of the left second flow channel 217. The other chiller supplies water to the inlet of the right first flow channel 216 and can receive water discharged from the outlet of the right second flow channel 217.

[0040] In one embodiment, see [link to relevant documentation]. Figure 3 The carrier 201 also includes a pressure frame 218, which is used to fix the target 102 on the first partition 214.

[0041] The inner side of the pressure frame 218 and the outer side of the target 102 are both provided with protrusions. The two protrusions limit each other. The pressure frame 218 fixes the target 102 on the first partition 214 and makes the target 102 in close contact with the first partition 214. At the same time, the target 102 should be prevented from deforming.

[0042] In one embodiment, see [link to relevant documentation]. Figure 3 The directions of the first flow channel 216 and the second flow channel 217 are both parallel to the length direction of the target material 102, and multiple first flow channels 216 and second flow channels 217 are evenly distributed along the width direction of the target material 102. The number of first flow channels 216 and second flow channels 217 is equal and greater than the number of permanent magnets 103. The support is also provided with an adjustment part. When the second drive part moves the permanent magnet 103 along the first direction, the adjustment part opens the liquid inlet and liquid outlet located between two adjacent permanent magnets 103 and closes the other liquid inlets and liquid outlets.

[0043] For the target 102 facing the opening 104, the area between it and the two adjacent permanent magnets 103 is the region with higher heat generation. When the second drive unit moves the permanent magnets 103 along the first direction to switch the relative positions of the permanent magnets 103 and the target 102 facing the opening 104, the region with higher heat generation of the target 102 changes. Simultaneously, the adjustment unit opens the liquid inlet and outlet located between the two adjacent permanent magnets 103 and closes the other liquid inlets and outlets. This allows the cooling area generated by the water to change with the region with higher heat generation of the target 102, thereby providing targeted heat dissipation for the target 102. This ensures effective heat dissipation for the target 102 while reducing the amount of cooling required.

[0044] Optionally, for example, the position between two adjacent permanent magnets 103 is referred to as the preset position, that is, the target material 102 facing the opening 104 generates higher heat at the preset position. When the second driving unit moves the permanent magnets 103, in the first direction, the adjusting unit opens the inlet and outlet of the first flow channel 216 opposite to the preset position, or opens the inlet and outlet of the first flow channel 216 located on both sides of the preset position, thereby ensuring the heat dissipation effect on the target material 102 at the preset position, while reducing the use of cooling capacity. It is understood that for the preset position, the specific number of inlets and outlets opened depends on factors such as the cross-sectional area of ​​the first flow channel 216 and the second flow channel 217, and can be selected and set according to the actual application. For example, the smaller the cross-sectional area of ​​the first flow channel 216 and the second flow channel 217, the more inlets and outlets are opened.

[0045] In this embodiment, both the first flow channel 216 and the second flow channel 217 are straight. In other embodiments not shown, the first flow channel 216 and the second flow channel 217 may be spiral or vortex flow channels, as well as serpentine or Z-shaped flow channels, which can also improve the heat dissipation effect on the target material 102.

[0046] In one embodiment, see [link to relevant documentation]. Figure 5 The support member 201 has multiple end plates 220 at its end, each end plate 220 corresponding to a multiple target material 102. Each end plate 220 has multiple first connecting holes 221 and multiple second connecting holes 222. The first connecting holes 221 communicate with multiple liquid inlets, and the second connecting holes 222 communicate with multiple liquid outlets. The adjustment part includes a rotating ring 223 rotatably mounted on a bracket. The side wall of the rotating ring 223 has multiple first control holes 224 and multiple second control holes 225. The first control holes 224 and the second control holes 225... The number of 5 is equal to and one less than the number of permanent magnets 103; the sidewall of the rotating ring 223 is in contact with the sidewall of the end plate 220 so that the first control hole 224 can communicate with the first connection hole 221 and the second control hole 225 can communicate with the second connection hole 222; when the second driving part moves the permanent magnet 103 along the first direction, the rotating ring 223 rotates so that the first control hole 224 communicates with the first connection hole 221 located between two adjacent permanent magnets 103 and the second control hole 225 communicates with the second connection hole 222 located between two adjacent permanent magnets 103.

[0047] When the second drive unit moves the permanent magnet 103 along the first direction to switch the relative position of the permanent magnet 103 and the target material 102 facing the opening 104, the heating area of ​​the target material 102 changes, and the rotating ring 223 rotates so that the first control hole 224 communicates with the first connecting hole 221 located between two adjacent permanent magnets 103, and the second control hole 225 communicates with the second connecting hole 222 located between two adjacent permanent magnets 103, thereby opening both the liquid inlet and the liquid outlet located between two adjacent permanent magnets 103. Since the side wall of the rotating ring 223 is in contact with the side wall of the end plate 220, the liquid inlet and liquid outlet located in other positions are closed.

[0048] The sidewalls of the end plate 220 and the rotating ring 223 are both arc-shaped, allowing them to seal and rotate relative to each other, ensuring communication between the first control hole 224 and the first connecting hole 221, and between the second control hole 225 and the second connecting hole 222. Both the first and second connecting holes 221 and 222 are L-shaped bends. One end of the first connecting hole 221 is connected to the inlet of the first flow channel 216, and the other end is connected to the first control hole 224. One end of the second connecting hole 222 is connected to the outlet of the second flow channel 217, and the other end is connected to the second control hole 225. In addition, a second gear ring 226 is coaxially provided on the rotating ring 223. The second gear ring 226 meshes with the second gear 207. The output end of the second motor 206 drives the second gear 207 to rotate, which drives the rack 208 and the permanent magnet 103 to move along the first direction, thereby switching the relative position of the permanent magnet 103 and the target material 102 facing the opening 104. At the same time, the second gear 207 drives the second gear ring 226 and the rotating ring 223 to rotate. The rotating ring 223 rotates so that the first control hole 224 is connected to the first connecting hole 221 located between two adjacent permanent magnets 103, and the second control hole 225 is connected to the second connecting hole 222 located between two adjacent permanent magnets 103, so that the position switching of the permanent magnet 103 and the switching of the cooling area are synchronized. In addition, the support is provided with two liquid-conducting shells 227, each of which has two chambers. The two chambers are respectively connected to the first control hole 224 and the second control hole 225. The liquid-conducting shell 227 also has two liquid delivery pipes that are respectively connected to the two chambers. Both liquid delivery pipes are connected to the chiller and are used to deliver water to the inlet or to receive water discharged from the outlet.

[0049] In one embodiment, see [link to relevant documentation]. Figure 9 All first connection holes 221 are provided with flow equalization components 228. The flow equalization components 228 are used to make the water flow rate entering all first flow channels 216 equal, so as to a certain extent ensure that the heat dissipation effect of the target material 102 in its width direction remains consistent.

[0050] Because the sidewall of the end plate 220 is arc-shaped, the lengths of two adjacent first connecting holes 221 differ, resulting in different times for water to flow through the first connecting holes 221. This affects the flow rate of water after entering the first flow channel 216 and the second flow channel 217, as well as the heat dissipation effect on the target material 102. For example, see... Figure 9From top to bottom, the length of the first connecting hole 221 gradually increases and then gradually decreases. Therefore, a flow equalization element 228 is provided in the first connecting hole 221, and the flow equalization element 228 has a through hole 229. From top to bottom, the through hole 229 of the flow equalization element 228 first gradually increases and then gradually decreases. Specifically, from top to bottom, the length of the first first connecting hole 221 is less than the length of the second first connecting hole 221. Therefore, the through hole 229 of the flow equalization element 228 in the first first connecting hole 221 is smaller and has a greater ability to impede water flow, while the through hole 229 of the flow equalization element 228 in the second first connecting hole 221 is larger and has a smaller ability to impede water flow. The flow equalization element 228 can be a pin structure with a through hole 229, which can be directly inserted into the first connecting hole 221 during installation.

[0051] In one embodiment, see [link to relevant documentation]. Figure 5 The first control hole 224 and the second control hole 225 are both elongated in the circumferential direction of the rotating ring 223. The length of the first control hole 224 is greater than the diameter of the first connecting hole 221, and the length of the second control hole 225 is greater than the diameter of the first connecting hole 221.

[0052] Regardless of how the rotating ring 223 rotates, the cross-sectional area at the junction of the first control hole 224 and the first connecting hole 221 remains unchanged, and the cross-sectional area at the junction of the second control hole 225 and the second connecting hole 222 remains unchanged, thereby ensuring the heat dissipation effect on the target material 102.

[0053] The working principle of this invention is as follows: A support is located within a vacuum chamber. The substrate is placed on a substrate holder, and the target material 102 is mounted on the first partition 214. The vacuum chamber is closed, and a pump is used to evacuate to the working vacuum level. Then, an appropriate amount of argon gas is introduced. A negative high voltage is applied to the target material 102. Electrons are accelerated under the influence of the electric field and collide with argon atoms, causing them to ionize. The magnetic field generated by the permanent magnet 103 confines the electrons to a region near the surface of the target material 102, forming a high-density plasma. Argon ions bombard the surface of the target material 102 at high speed under the influence of the electric field, causing the atoms or molecules of the target material 102 to be sputtered out. The sputtered target material 102 particles pass through the opening 104 of the outer cylinder 101 and are eventually deposited onto the surface of the substrate placed opposite, gradually accumulating to form the desired thin film.

[0054] During the sputtering process, water is supplied to the inlet via a chiller. The water enters the first flow channel 216 through the inlet and, together with the first baffle 214 made of thermally conductive material, dissipates heat from the target 102. The water that absorbs heat from the target 102 enters the second flow channel 217 and is discharged from the outlet, thus completing the heat dissipation process for the target 102. The water closest to the target 102 is always at a low temperature, while the heated water is moved away from the target 102, enhancing the heat dissipation effect on the target 102. This, to a certain extent, ensures the stable operation of the magnetron sputtering device, extends the service life of the target 102, and maintains process consistency.

[0055] During sputtering, the output of the second motor 206 drives the second gear 207 to rotate, causing the rack 208 and permanent magnet 103 to move along the first direction. This switches the relative positions of the permanent magnet 103 and the target 102 facing the opening 104 in its width direction. The strong magnetic field can change the position of the plasma relative to the surface of the target 102, thereby changing the position where grooves are formed on the surface of the target 102, improving the utilization rate of the target 102, reducing the number of downtimes to replace the target 102, and facilitating continuous production. For the target 102 facing the opening 104, the area between it and the two adjacent permanent magnets 103 is the region with higher heat generation. When the permanent magnet 103 moves along the first direction to switch the relative position of the permanent magnet 103 and the target material 102 facing the opening 104, the area of ​​the target material 102 with higher heat generation changes. The second gear 207 also drives the second gear ring 226 and the rotating ring 223 to rotate simultaneously. The rotating ring 223 rotates so that the first control hole 224 is connected to the first connecting hole 221 located between two adjacent permanent magnets 103, and the second control hole 225 is connected to the second connecting hole 222 located between two adjacent permanent magnets 103. This opens the liquid inlet and liquid outlet located between two adjacent permanent magnets 103 and closes the other liquid inlet and liquid outlet. This allows the cooling area generated by the water to change with the area of ​​the target material 102 with higher heat generation, so as to perform targeted heat dissipation on the target material 102. This reduces the amount of cooling used while ensuring the heat dissipation effect on the target material 102.

[0056] In addition, the output end of the first motor 202 can drive the first gear 203 to rotate, which in turn drives the first gear ring 204 and the carrier 201 to rotate circumferentially along the outer cylinder 101, thereby switching the target material 102 facing the opening 104. This can form a single-layer or multi-layer composite coating, while further reducing the number of times the machine stops to replace the target material 102, which is convenient for continuous production.

[0057] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0058] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of the invention. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these modifications and improvements all fall within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the appended claims.

Claims

1. A cylindrical polyhedral rotating magnetron sputtering device with balanced and unbalanced magnetic field coupling, characterized in that, The device includes a support frame and an outer cylinder mounted on the support frame. A support member is provided inside the outer cylinder, and multiple plate-shaped targets are evenly distributed along the circumference of the outer cylinder on the support member. The thickness direction of the targets is parallel to the radial direction of the outer cylinder. An accommodating space is formed within the support member, and strip-shaped permanent magnets are disposed within the accommodating space. The length directions of both the targets and the permanent magnets are parallel to the axis of the outer cylinder. Multiple permanent magnets are evenly distributed along a first direction, which is parallel to the width direction of the targets facing the opening. The side of the outer cylinder has an opening, and a permanent magnet is opposite one of the targets, both facing the opening. The support frame is provided with a first driving unit and a second driving unit. The first driving unit is used to rotate the support member along the circumference of the outer cylinder to switch the target facing the opening. The second driving unit is used to move the permanent magnet along the first direction to switch the relative position of the permanent magnet and the target facing the opening.

2. The cylindrical polyhedral rotating magnetron sputtering apparatus with balanced and unbalanced magnetic field coupling according to claim 1, characterized in that, All permanent magnets are able to move synchronously relative to the support along a second direction, which is parallel to the thickness direction of the target material facing the opening; the support is provided with an elastic element, which is used to make all permanent magnets tend to move synchronously toward the target material along the second direction.

3. The cylindrical polyhedral rotating magnetron sputtering apparatus with balanced and unbalanced magnetic field coupling according to claim 2, characterized in that, The carrier is equipped with a flow channel assembly, which is filled with water to dissipate heat from the target material.

4. The cylindrical polyhedral rotating magnetron sputtering apparatus with balanced and unbalanced magnetic field coupling according to claim 3, characterized in that, The carrier includes a first partition and a second partition. The target, the first partition, and the second partition are arranged and in contact in sequence. The first partition is made of a thermally conductive material, and the second partition is made of a thermally insulating material and can contact the permanent magnet. The flow channel assembly includes a first flow channel opened in the first partition and a second flow channel opened in the second partition. The first flow channel and the second flow channel have a first end and a second end in the axial direction of the outer cylinder. The first end of the first flow channel has a liquid inlet, and the first end of the second flow channel has a liquid outlet. The second end of the first flow channel is connected to the second end of the second flow channel.

5. The cylindrical polyhedral rotating magnetron sputtering apparatus with balanced and unbalanced magnetic field coupling according to claim 4, characterized in that, The first and second flow channels are arranged symmetrically about the first plane, which is perpendicular to the axis of the outer cylinder and passes through the middle of the outer cylinder in its axial direction.

6. The cylindrical polyhedral rotating magnetron sputtering apparatus with balanced and unbalanced magnetic field coupling according to claim 4, characterized in that, The carrier also includes a pressure frame, which is used to fix the target material on the first partition.

7. The cylindrical polyhedron rotating magnetron sputtering apparatus with balanced and unbalanced magnetic field coupling according to claim 4, characterized in that, The directions of the first and second flow channels are both parallel to the length direction of the target material, and multiple first and second flow channels are evenly distributed along the width direction of the target material. The number of first and second flow channels is equal and greater than the number of permanent magnets. The support is also provided with an adjustment part. When the second drive part moves the permanent magnet along the first direction, the adjustment part opens the liquid inlet and liquid outlet located between two adjacent permanent magnets and closes the other liquid inlets and liquid outlets.

8. The cylindrical polyhedral rotating magnetron sputtering apparatus with balanced and unbalanced magnetic field coupling according to claim 7, characterized in that, The end of the carrier is provided with multiple end plates, each corresponding to a target material. Each end plate has multiple first connecting holes and multiple second connecting holes. The first connecting holes are connected to multiple liquid inlets, and the second connecting holes are connected to multiple liquid outlets. The adjustment part includes a rotating ring rotatably mounted on a bracket. The side wall of the rotating ring has multiple first control holes and multiple second control holes. The number of first control holes and second control holes is equal and one less than the number of permanent magnets. The side wall of the rotating ring fits against the side wall of the end plate so that the first control holes can communicate with the first connecting holes, and the second control holes can communicate with the second connecting holes. When the second drive unit moves the permanent magnet along the first direction, the rotating ring rotates so that the first control hole communicates with the first connecting hole located between two adjacent permanent magnets, and the second control hole communicates with the second connecting hole located between two adjacent permanent magnets.

9. The cylindrical polyhedral rotating magnetron sputtering apparatus with balanced and unbalanced magnetic field coupling according to claim 8, characterized in that, All first connection holes are equipped with flow equalizers to ensure that the water flow rate entering all first flow channels is equal.

10. The cylindrical polyhedral rotating magnetron sputtering apparatus with balanced and unbalanced magnetic field coupling according to claim 8, characterized in that, Both the first control hole and the second control hole are elongated strips in the circumferential direction of the rotating ring. The length of the first control hole is greater than the diameter of the first connecting hole, and the length of the second control hole is greater than the diameter of the first connecting hole.

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