Vapor deposition equipment and thin film photovoltaic cell

Abstract

The invention provides vapor deposition equipment and a thin film photovoltaic cell, and relates to the technical field of thin film preparation. In the vapor deposition equipment, a gas transmission unit comprises a gas inlet and a gas outlet which are communicated, and the gas inlet is used for receiving carrier gas. The gasification unit outputs raw material gas through a steam opening. The distribution unit comprises a containing cavity and a containing opening, and the containing cavity is communicated with the air outlet, the steam opening and the containing opening, so that the carrier gas carries the raw material gas to flow to the containing opening. An inner cavity of the deposition unit is communicated with the containing opening. In the length direction of the gas transmission unit, the gas inlets are formed in the two sides of the gas transmission unit, and in the direction perpendicular to the length direction of the gas transmission unit, the gas outlet is formed in one side of the gas transmission unit. The temperature of the carrier gas and the heating temperature of the gasification unit are decoupled, the morphology of the thin film is convenient to regulate and control, the uniformity of the carrier gas carrying the raw material gas flowing out of the containing opening is improved, and the uniformity of the thin film is improved.

Description

Technical Field

[0001] This application relates to the field of thin film preparation technology, and in particular to a vapor deposition apparatus and a thin film photovoltaic cell. Background Technology

[0002] In thin-film photovoltaic cells, the light-absorbing layer is used for photoelectric conversion, and its quality determines the photoelectric performance of the thin-film photovoltaic cell. During the fabrication of the light-absorbing layer, a thin film needs to be prepared using vapor deposition equipment, and the morphology of the film affects the quality of the light-absorbing layer. In existing vapor deposition equipment, a carrier gas is introduced into a vaporization unit containing the raw material. The vaporization unit heats the raw material, causing it to vaporize and form a raw material gas. This raw material gas is then carried by the carrier gas to the substrate and deposited onto the substrate to form a thin film. However, because the raw material and the carrier gas are heated together, the temperature of the carrier gas is coupled with the heating temperature of the vaporization unit. Adjusting the heating temperature of the vaporization unit simultaneously changes both the vaporization efficiency of the raw material and the temperature of the carrier gas, making it difficult to precisely control the morphology of the thin film. Summary of the Invention

[0003] This application provides a vapor deposition apparatus and a thin-film photovoltaic cell, aiming to solve the technical problem that the morphology of thin films prepared by vapor deposition apparatus is difficult to control in a fine manner.

[0004] In a first aspect, embodiments of this application provide a vapor deposition apparatus. The vapor deposition apparatus includes a gas delivery unit, a vaporization unit, a distribution unit, and a deposition unit. The gas delivery unit includes an inlet and an outlet; the inlet receives carrier gas, and the outlet communicates with the inlet. The vaporization unit includes a vapor port for outputting raw material gas. The distribution unit includes a receiving cavity and a receiving opening; the receiving cavity communicates with the receiving opening, the vapor port, and the outlet, allowing the carrier gas to carry the raw material gas to the receiving opening. The inner cavity of the deposition unit communicates with the receiving opening. Specifically, along the length of the gas delivery unit, the inlets are located on both sides of the gas delivery unit, and in a direction perpendicular to the length of the gas delivery unit, the outlet is located on one side of the gas delivery unit.

[0005] The vapor deposition apparatus provided in this application embodiment can be used to form a thin film on a substrate. The substrate is housed within the cavity of a deposition unit. A gas delivery unit receives carrier gas through an inlet, and the carrier gas flows into the cavity through an outlet. A vaporization unit heats the raw material, causing it to vaporize and form a raw material gas, which flows into the cavity through a vapor outlet. Since the cavity is connected to a cavity opening, a vapor outlet, and an outlet, the carrier gas carries the raw material gas towards the cavity opening. During the process of the carrier gas flowing from the inlet through the outlet and the cavity to the cavity opening, the carrier gas flows towards the raw material gas and mixes evenly with it. The raw material gas then flows with the carrier gas from the cavity opening to the substrate in the deposition unit to form a thin film on the substrate.

[0006] Since the carrier gas does not flow into the vaporization unit, its temperature is unaffected by the heating temperature of the vaporization unit, thus decoupling the carrier gas temperature from the heating temperature of the vaporization unit. This allows for precise control of the film morphology by adjusting not only the efficiency of the raw material gas output from the vapor port, thus regulating the deposition efficiency of the raw material gas on the substrate, but also by adjusting the temperature of the carrier gas output from the outlet, thus regulating the temperature environment as the carrier gas carries the raw material gas to the substrate in the deposition unit. Furthermore, the driving of the raw material gas by the carrier gas not only reduces the pressure in the space around the vapor port, improving the efficiency of the raw material gas overflowing from the vapor port and ensuring continuous and rapid vaporization of the raw material under the heating of the vaporization unit, thereby improving the vaporization efficiency, but also improves the efficiency of the raw material gas flowing to the receiving opening, thus improving the film formation efficiency on the substrate.

[0007] Furthermore, the design of placing the air inlets on both sides of the gas delivery unit along its length ensures that the carrier gas can flow in from both sides of the gas delivery unit along its length and flow towards the air outlet, achieving bidirectional air intake. This avoids situations where the air outlet has different outlet efficiencies at both ends along the length of the gas delivery unit, which helps improve the uniformity of the carrier gas output from the outlet, the uniformity of the carrier gas carrying the raw material gas flowing into the inner cavity of the deposition unit from the receiving opening, and ultimately improves the uniformity and quality of the thin film formed by the raw material gas on the substrate.

[0008] In one possible implementation, there are multiple air outlets, which are arranged sequentially at equal intervals along the length of the air delivery unit.

[0009] Multiple equally spaced gas outlets can output carrier gas, which helps to improve the uniformity of carrier gas output from the gas delivery unit, the uniformity of carrier gas carrying raw material gas flowing into the inner cavity of the deposition unit from the receiving opening, and the uniformity of the film and the film quality.

[0010] In one possible implementation, the distance between the air inlet and the air outlet on one side of the air delivery unit is equal to the distance between the air inlet and the air outlet on the other side of the air delivery unit along the length of the unit.

[0011] This ensures that the efficiency of the carrier gas flowing from the inlet on one side of the gas supply unit to the outlet is the same as that of the carrier gas flowing from the inlet on the other side of the gas supply unit to the outlet. This is beneficial to improving the uniformity of the carrier gas output from the outlet, and thus to improving the uniformity of the film and the quality of film formation.

[0012] In one possible implementation, the gas delivery unit is partially inserted into the receiving cavity along its length, with the air inlet exposed outside the receiving cavity, and the length direction of the gas delivery unit is parallel to the length direction of the receiving opening.

[0013] In this way, the gas outlet of the gas delivery unit can be directly connected to the receiving cavity, avoiding the need for complex piping between the gas outlet and the receiving cavity, which simplifies the structure of the vapor deposition equipment. Moreover, since the length direction of the gas delivery unit is parallel to the length direction of the receiving opening, the distance between the gas outlet and the receiving opening along the length direction of the gas delivery unit can be equal, which helps to improve the uniformity of the carrier gas carrying the raw material gas flowing out of the receiving opening, and thus improves the uniformity and quality of the film.

[0014] In one possible implementation, the steam port and the containment cavity are partially connected between the gas delivery unit and the containment opening.

[0015] In this way, the raw material gas flows into the receiving cavity from the steam port, and the carrier gas flows out from the gas outlet and then purges the raw material gas, causing the raw material gas to flow with the carrier gas towards the receiving opening. This avoids the transmission of the raw material gas in the gas delivery unit. Furthermore, by adjusting the heating temperature of the gas delivery unit, the temperature of the carrier gas flowing towards the receiving opening can be adjusted, enabling precise control of the film morphology and facilitating control. Moreover, it helps improve the cleanliness of the gas delivery unit, making cleaning easier.

[0016] In one possible implementation, the length direction of the steam port is parallel to the length direction of the gas delivery unit, and the gas outlet is located on one side of the steam port in the depth direction and in the width direction of the steam port.

[0017] This ensures that the distance between the outlet and the steam port along the length of the gas delivery unit is equal, which helps to improve the uniformity of the carrier gas output from the outlet in purging the raw material gas, and thus improves the uniformity and quality of the film.

[0018] In one possible implementation, the vaporization unit is housed in a housing cavity and located between the gas delivery unit and the housing opening.

[0019] This design improves the space utilization of the gas delivery unit, vaporization unit, and distribution unit, facilitating the miniaturization of the vapor deposition equipment. It also avoids complex piping between the vaporization unit and the gas delivery and distribution units, simplifying the vapor deposition process. Furthermore, it shortens the path of the carrier gas carrying the raw material gas towards the containment opening, preventing temperature drops or condensation on the cavity walls during long-distance transport, which could lead to low film quality. This improves film quality and reduces the need for insulation of the carrier gas and raw material gas through the distribution unit.

[0020] In one possible implementation, the receiving cavity includes a receiving sub-cavity and a flow channel. The vaporization unit and the gas delivery unit are received in the receiving sub-cavity. The flow channel includes a first port and a second port. The first port communicates with the receiving sub-cavity, and the second port communicates with the receiving opening. The cross-sectional area of ​​the first port is larger than the cross-sectional area of ​​the second port.

[0021] The carrier gas output from the outlet carries the raw material gas output from the vapor outlet into the flow channel through the first port of the receiving sub-cavity, and then flows out through the receiving opening from the second port. The structural design of the flow channel helps to reduce the resistance of the carrier gas carrying the raw material gas into the flow channel, improves the efficiency of the carrier gas carrying the raw material gas into the flow channel, and also helps to increase the flow velocity of the carrier gas carrying the raw material gas out of the receiving opening, which helps to improve the film formation efficiency.

[0022] In one possible implementation, the gas delivery unit includes a first sub-gas delivery unit and a second sub-gas delivery unit. In the depth direction of the steam port, the first sub-gas delivery unit and the second sub-gas delivery unit are sequentially arranged on one side of the gasification unit. The gas outlet includes a first sub-gas outlet and a second sub-gas outlet. The first sub-gas outlet is arranged in the first sub-gas delivery unit, and the second sub-gas outlet is arranged in the second sub-gas delivery unit. The gas inlet includes a first sub-gas inlet and a second sub-gas inlet. In the length direction of the gas delivery unit, the first sub-gas inlet is arranged on one side of the first sub-gas delivery unit, and the second sub-gas inlet is arranged on the side of the second sub-gas delivery unit opposite to the first sub-gas inlet.

[0023] Both the first and second sub-inlets can receive carrier gas, and both the first and second sub-outlets can output carrier gas. The carrier gas output from the first and second sub-outlets jointly purges the raw material gas output from the steam port. Carrier gas flowing in from one side of the gas conveying unit along its length enters the first sub-gas conveying unit through the first sub-inlet, while carrier gas flowing in from the other side of the gas conveying unit along its length enters the first sub-gas conveying unit through the second sub-inlet. This avoids mutual interference between the two streams of carrier gas flowing in from both sides of the gas conveying unit along its length, which helps improve the stability of the gas output from the first and second sub-outlets. Furthermore, the outlet directions of the first and second sub-outlets can be adjusted separately to improve the uniformity of the carrier gas output from the gas conveying unit purging the raw material gas, which is beneficial for improving the uniformity of the film and the film formation quality. In addition, if the first or second sub-gas delivery unit fails, the raw material gas can still flow out from the containment opening along with the carrier gas to form a thin film, which helps to improve the operational reliability of the vapor deposition equipment.

[0024] In one possible implementation, the distance between the axis of the second sub-outlet and the steam outlet in the depth direction of the steam outlet gradually decreases in the direction of the second sub-outlet pointing towards the steam outlet along the width direction of the steam outlet.

[0025] In this way, the outlet direction of the second sub-outlet can be towards the steam outlet, which is beneficial to improving the purging efficiency of the carrier gas output from the second sub-outlet on the raw material gas output from the steam outlet, improving the efficiency of the raw material gas moving away from the steam outlet along the width direction of the steam outlet, improving the efficiency of the raw material gas flowing towards the receiving opening with the carrier gas, and improving the film formation efficiency.

[0026] In one possible implementation, the gas delivery unit further includes a gas delivery chamber, through which the gas inlet communicates with the gas outlet, and in the length direction of the gas delivery unit, the portion of the gas delivery chamber located between the gas inlet and the gas outlet communicates with the steam port.

[0027] The raw material gas output from the steam outlet can flow into the gas delivery chamber and mix evenly with the carrier gas received at the inlet before flowing to the outlet. The carrier gas carrying the raw material gas is output from the outlet and then flows to the receiving opening. In this way, by adjusting the length of the gas delivery unit, the mixing uniformity of the raw material gas and the carrier gas can be adjusted, which is beneficial to improving the uniformity of the raw material gas flowing to the receiving opening with the carrier gas, and thus improving the uniformity of the film and the film formation quality.

[0028] In one possible implementation, the vaporization unit is located outside the containment cavity.

[0029] This approach helps reduce the volume of the containment cavity and shortens the path of the carrier gas carrying the raw material gas to the containment opening. It avoids the risk of the carrier gas and raw material gas experiencing temperature drops or condensation on the cavity wall, which could lead to low film quality. This approach helps improve film quality and reduces the need for heat preservation of the carrier gas and raw material gas through the distribution unit.

[0030] In one possible implementation, the gas delivery unit includes a first sub-gas delivery unit and a second sub-gas delivery unit. In the width direction of the receiving opening, the first sub-gas delivery unit and the second sub-gas delivery unit are disposed on opposite sides of the receiving opening. The gas outlet includes a first sub-gas outlet and a second sub-gas outlet, with the first sub-gas outlet disposed on the first sub-gas delivery unit and the second sub-gas outlet disposed on the second sub-gas delivery unit. The gas inlet includes a first sub-gas inlet and a second sub-gas inlet. In the length direction of the gas delivery unit, the first sub-gas inlet is disposed on one side of the first sub-gas delivery unit, and the second sub-gas inlet is disposed on the side of the second sub-gas delivery unit opposite to the first sub-gas inlet. There are multiple gas delivery chambers. The first sub-gas inlet is connected to the first sub-gas outlet through one gas delivery chamber, and the second sub-gas inlet is connected to the second sub-gas outlet through another gas delivery chamber.

[0031] Both the first and second sub-inlets can receive carrier gas, and both the first and second sub-outlets can output carrier gas carrying raw material gas. The carrier gas carrying raw material gas output from the first and second sub-outlets is mixed evenly in the receiving cavity before flowing out through the receiving opening. Carrier gas flowing in from one side of the gas delivery unit along its length enters the first sub-gas delivery unit through the first sub-inlet, mixes with the raw material gas, and then flows out from the first sub-outlet; carrier gas flowing in from the other side of the gas delivery unit along its length enters the second sub-gas delivery unit through the second sub-inlet, mixes evenly with the raw material gas, and then flows out from the second sub-outlet. This avoids mutual interference between the two streams of carrier gas carrying raw material gas flowing from opposite sides of the gas delivery unit along its length towards the outlet, thus improving the stability of the gas output from the first and second sub-outlets. Furthermore, the gas outlet directions of the first and second sub-outlets can be adjusted separately to improve the uniformity of the carrier gas carrying the raw material gas flowing out of the containment opening, which is beneficial to improving the uniformity and quality of the film. In addition, if the first or second sub-gas delivery unit fails, the raw material gas can still flow out with the carrier gas through the containment opening to form a film, which helps to improve the operational reliability of the vapor deposition equipment.

[0032] In one possible implementation, the first sub-outlet faces the receiving opening, and the depth direction of the first sub-outlet is inclined relative to the width direction of the receiving opening.

[0033] This helps to improve the efficiency of the carrier gas carrying the raw material output from the first outlet flowing towards the receiving opening, which in turn helps to improve the film formation efficiency.

[0034] In one possible implementation, the air inlet includes a first sub-air inlet and a second sub-air inlet. Along the length of the air delivery unit, the first sub-air inlet and the second sub-air inlet are disposed on both sides of the air delivery unit. There are multiple vaporization units. Along the length of the air delivery unit, the portion of the air delivery chamber located between the first sub-air inlet and the air outlet is connected to the steam port of one vaporization unit, and the portion of the air delivery chamber located between the second sub-air inlet and the air outlet is connected to the steam port of another vaporization unit.

[0035] In this way, the carrier gas received at the first sub-inlet can be mixed with the raw material gas output from the steam port of one gasification unit before flowing to the outlet; the carrier gas received at the second sub-inlet can be mixed with the raw material gas output from the steam port of another gasification unit before flowing to the outlet. This avoids the situation where the raw material gas output from the steam port of a single gasification unit flows into the portion of the gas delivery chamber between the first sub-inlet and the outlet, or into the portion of the gas delivery chamber between the second sub-inlet and the outlet. This simplifies the complexity of the piping between the gasification unit and the gas delivery unit, and also simplifies the vapor deposition equipment.

[0036] Secondly, embodiments of this application also provide a thin-film photovoltaic cell. The thin-film photovoltaic cell includes a transparent electrode, a first transport layer, a light-absorbing layer, a second transport layer, and a back electrode arranged sequentially. One of the first transport layer and the second transport layer is an electron transport layer, and the other is a hole transport layer. At least one of the light-absorbing layer, the electron transport layer, and the back electrode is fabricated using the vapor deposition apparatus described in any one of the first aspects. Attached Figure Description

[0037] To more clearly illustrate the technical solutions in the embodiments of this application or the background art, the accompanying drawings used in the embodiments of this application or the background art will be described below.

[0038] Figure 1 This is a schematic diagram of the structure of a thin-film photovoltaic cell provided in an embodiment of this application; Figure 2 This is a three-dimensional structural diagram of a vapor deposition apparatus and a substrate provided in an embodiment of this application; Figure 3 yes Figure 2 The diagram shows a three-dimensional structure of the vapor deposition equipment and substrate cut along line AA. Figure 4 yes Figure 3 A schematic diagram of the vapor deposition equipment shown (gas source omitted) cut along line BB; Figure 5 yes Figure 2 The diagram shows the structure of the vapor deposition equipment (gas source omitted) and the substrate cut along the CC line; Figure 6 This is a schematic diagram of a processing method for a thin-film photovoltaic cell provided in an embodiment of this application; Figure 7 This is a schematic diagram of another processing method for thin-film photovoltaic cells provided in an embodiment of this application; Figure 8 This is a schematic diagram of another vapor deposition apparatus provided in an embodiment of this application; Figure 9 This is a schematic diagram of another vapor deposition apparatus provided in an embodiment of this application; Figure 10 yes Figure 9 The diagram shown is a cross-section of the vapor deposition equipment along the DD line. Figure 11 This is a schematic diagram of another vapor deposition apparatus provided in an embodiment of this application; Figure 12 This is a schematic diagram of another vapor deposition apparatus provided in an embodiment of this application; Figure 13 yes Figure 12 A schematic diagram of a partial three-dimensional structure of the vapor deposition equipment shown, cut along line EE. Figure 14 This is a schematic diagram of another vapor deposition apparatus provided in an embodiment of this application; Figure 15 yes Figure 14 A schematic diagram of the vapor deposition equipment shown (gas source omitted) cut along line FF; Figure 16 yes Figure 14 A schematic diagram of a partial three-dimensional structure of the vapor deposition equipment cut along the GG line; Figure 17 This is a schematic diagram of another vapor deposition apparatus provided in an embodiment of this application. Detailed Implementation

[0039] This application provides a vapor deposition apparatus and a thin-film photovoltaic cell. The vapor deposition apparatus is used for the fabrication of thin-film photovoltaic cells. It should be noted that in this application embodiment, "equality" between feature A and feature B can mean complete equality, or a slight deviation may be allowed. Similarly, "parallelism" between feature A and feature B can mean complete parallelism, or a slight deviation may be allowed. For example, there may be an angle between feature A and feature B, and the angle can be 5°, 10°, or 15°.

[0040] The embodiments of this application are described below with reference to the accompanying drawings.

[0041] Please see Figure 1 , Figure 2 and Figure 3 , Figure 1 This is a schematic diagram of the structure of a thin-film photovoltaic cell 1000 provided in an embodiment of this application. Figure 2 This is a three-dimensional structural diagram of a vapor deposition apparatus 100 and a substrate 200 provided in an embodiment of this application. Figure 3 yes Figure 2 The diagram shows a three-dimensional structure of the vapor deposition equipment 100 and the substrate 200 cut along line AA.

[0042] like Figure 1 As shown, the thin-film photovoltaic cell 1000 may include a transparent electrode 101, a first transport layer 102, a light-absorbing layer 103, a second transport layer 104, and a back electrode 105 arranged sequentially, and also includes a substrate 106 and a passivation layer 107. The substrate 106 is disposed on the side of the transparent electrode 101 facing away from the first transport layer 102. One of the first transport layer 102 and the second transport layer 104 is an electron transport layer, and the other is a hole transport layer. The passivation layer 107 is disposed between the electron transport layer and the light-absorbing layer 103. The following description takes the first transport layer 102 as a hole transport layer and the second transport layer 104 as an electron transport layer as an example. The passivation layer 107 is disposed between the second transport layer 104 and the light-absorbing layer 103.

[0043] For example, the transparent electrode 101 can be made of a transparent conductive oxide (TCO). The transparent conductive oxide can be a combination of one or more materials selected from, but not limited to, indium tin oxide (ITO), fluorine-doped tin oxide (FTO), and indium zinc oxide (IZO). The light-absorbing layer 103 can be made of a light-converting material. For example, the light-converting material can be perovskite. In some other embodiments, the light-converting material can also be, but not limited to, organic semiconductor materials, copper indium gallium selenide (CIGS), or cadmium telluride (CdTe). The electron transport layer can be made of an electronic semiconductor, which can be, but not limited to, titanium oxide, zinc oxide, or tin oxide. The hole transport layer can be made of a hole-type semiconductor. The hole-type semiconductor can be, but not limited to, nickel oxide, cuprous oxide, or molybdenum oxide. The back electrode 105 can be made of a metallic material or a transparent conductive oxide. The substrate 106 can be made of, but not limited to, glass or other transparent materials.

[0044] Light can pass through the substrate 106, transparent electrode 101, and first transport layer 102 to the light-absorbing layer 103. The light-absorbing layer 103 absorbs light and generates holes and electrons. Holes are transferred to the transparent electrode 101 via the first transport layer 102, and electrons are transferred to the back electrode 105 via the passivation layer 107 and second transport layer 104, thereby enabling the thin-film photovoltaic cell 1000 to generate photocurrent. The passivation layer 107 improves the efficiency of electron transfer from the light-absorbing layer 103 to the back electrode 105. Therefore, the quality of the light-absorbing layer 103 determines the photoelectric conversion efficiency and output power of the thin-film photovoltaic cell 1000. In the prior art, the processing of the light-absorbing layer 103 requires the preparation of a thin film using a vapor deposition device, and the morphology of the thin film affects the quality of the light-absorbing layer 103. However, in existing vapor deposition devices, a carrier gas is introduced into a vaporization unit containing raw materials. The vaporization unit heats the raw materials, causing them to vaporize and form a raw material gas. This raw material gas flows with the carrier gas to the substrate and is deposited on the substrate to form a thin film. However, since the raw materials and carrier gas are heated together, the temperature of the carrier gas is coupled with the heating temperature of the gasification unit. Adjusting the heating temperature of the gasification unit will simultaneously change the gasification efficiency of the raw materials and the temperature of the carrier gas, making it difficult to finely control the morphology of the film.

[0045] like Figure 1 , Figure 2 and Figure 3 As shown, to address the aforementioned problems, this application provides a vapor deposition apparatus 100. By changing the flow of the carrier gas carrying the raw material gas to the substrate 200, the temperature of the carrier gas and the heating temperature of the raw material are decoupled, facilitating precise control of the morphology of the thin film formed on the substrate 200. Furthermore, by changing the inlet and outlet methods of the carrier gas, the uniformity and quality of the thin film can be improved. In the processing of the thin-film photovoltaic cell 1000, at least one of the light-absorbing layer 103, the electron transport layer (e.g., the second transport layer 104), the back electrode 105, and the passivation layer 107 can be fabricated using the vapor deposition apparatus 100 provided in this application.

[0046] Please see Figure 4 and Figure 5 and combined Figure 2 and Figure 3 , Figure 4 yes Figure 3 The diagram shows a cross-section of the vapor deposition apparatus 100 (gas source 50 omitted) along line BB. Figure 5 yes Figure 2 The diagram shows a vapor deposition apparatus 100 (gas source 50 omitted) and a substrate 200 cut along the CC line.

[0047] like Figure 2 , Figure 3 and Figure 4As shown, the vapor deposition apparatus 100 provided in this embodiment may include a gas delivery unit 10, a vaporization unit 20, a distribution unit 30, and a deposition unit 40, and may also include a gas source 50 and a heating unit 60. The gas source 50 is used to output carrier gas M1. The gas delivery unit 10 may include an inlet 11 and an outlet 12, and also includes a gas delivery chamber 13. The inlet 11 is connected to the inner cavity of the gas source 50. The inlet 11 is used to receive carrier gas M1. Both the inlet 11 and the outlet 12 are connected to the gas delivery chamber 13, and the inlet 11 is connected to the outlet 12 through the gas delivery chamber 13. The carrier gas M1 can be output from the outlet 12 through the gas delivery chamber 13. Wherein, in the length direction of the gas delivery unit 10 (e.g., the Z-axis direction shown in the figure), the inlet 11 is disposed on both sides of the gas delivery unit 10, and in the direction perpendicular to the length direction of the gas delivery unit 10, the outlet 12 is disposed on one side of the gas delivery unit 10.

[0048] Specifically, the air inlet 11 may include a first sub-air inlet 111 and a second sub-air inlet 112. Along the length of the air delivery unit 10 (e.g., the Z-axis direction shown in the figure), the first sub-air inlet 111 is located on one side of the air delivery unit 10, and the second sub-air inlet 112 is located on one side of the air delivery unit 10. The air delivery chamber 13 connects the first sub-air inlet 111 and the second sub-air inlet 112. In the radial direction of the air delivery unit 10, the air outlet 12 is located on one side of the air delivery chamber 13 and communicates with the air delivery chamber 13. Figure 2 , Figure 3 and Figure 4 In the illustrated embodiment, there are multiple air sources 50, including a first air source 51 and a second air source 52. The inner cavity of the first air source 51 is connected to a first sub-inlet 111, and the inner cavity of the second air source 52 is connected to a second sub-inlet 112. Both the first air source 51 and the second air source 52 can output carrier gas M1. The carrier gas M1 output from the first air source 51 (second air source 52) flows into the air delivery chamber 13 from the first sub-inlet 111 (second sub-inlet 112), and flows out from the outlet 12 through the air delivery chamber 13. The air delivery unit 10 receives air bidirectionally along its length. In other embodiments, the number of air sources 50 may be one, three, or more. For example, the first sub-inlet 111 and the second sub-inlet 112 may be connected to the inner cavities of multiple air sources 50, respectively.

[0049] The heating unit 60 is used to heat the carrier gas M1 output from the gas source 50, so that the temperature of the carrier gas M1 output from the gas outlet 12 is higher than the temperature of the carrier gas M1 output from the gas source 50. The temperature of the carrier gas M1 output from the gas outlet 12 can be adjusted via the heating unit 60. Figure 2 , Figure 3 and Figure 4In the illustrated embodiment, the heating unit 60 covers the outer periphery of the gas delivery unit 10, and the gas outlet 12 is exposed outside the heating unit 60. The heating unit 60 can heat the carrier gas M1 in the gas delivery chamber 13, so that the temperature of the carrier gas M1 output from the gas outlet 12 is higher than the temperature of the carrier gas M1 received by the gas inlet 11. In some other embodiments, the heating unit 60 can also be disposed between the gas source 50 and the gas inlet 11. Specifically, there can be multiple heating units 60. The first sub-gas inlet 111 is connected to the inner cavity of the first gas source 51 through one heating unit 60, and the second sub-gas inlet 112 is connected to the inner cavity of the second gas source 52 through another heating unit 60. The heating unit 60 can heat the carrier gas M1 output from the first gas source 51 (second gas source 52), so that the temperature of the carrier gas M1 output from the gas outlet 12 is higher than the temperature of the carrier gas M1 output from the gas source 50. The heating unit 60 can also regulate the temperature of the carrier gas M1 output from the gas outlet 12.

[0050] The vaporization unit 20 may include a steam port 21, a steam chamber 22, and a heating element 23. The steam chamber 22 is connected to the steam port 21. The heating element 23 is disposed on the wall of the steam chamber 22. The steam chamber 22 is used to contain raw materials. The heating element 23 is used to heat the raw materials and form raw material gas M2. The steam port 21 is used to output the raw material gas M2. The heating temperature of the raw materials can be adjusted by the heating element 23 to adjust the efficiency of the raw material gas M2 overflowing from the steam port 21. The wall of the steam chamber 22 may be made of materials including but not limited to graphite or other thermally conductive materials. An isolation layer (not shown) may be provided on the surface of the wall of the steam chamber 22, and the heating element 23 is disposed on the side of the isolation layer facing away from the wall of the steam chamber 22. The isolation layer may be made of materials including but not limited to silicon carbide. The design of the isolation layer can, on the one hand, prevent the raw materials from directly contacting the wall of the steam chamber 22, thus preventing the wall of the steam chamber 22 from reacting with the raw materials during the heating process; on the other hand, it can improve the heating uniformity of the raw materials, which is beneficial to improving the stability of the raw material vaporization.

[0051] The distribution unit 30 may include a receiving cavity 31 and a receiving opening 32. The receiving cavity 31 is connected to the gas outlet 12, the steam outlet 21, and the receiving opening 32, allowing the carrier gas M1 to carry the raw material gas M2 to flow to the receiving opening 32. The distribution unit 30 may be connected to a heat preservation device. The heat preservation device can control the temperature of the cavity wall of the receiving cavity 31, preventing the carrier gas M1 and the raw material gas M2 from condensing in the receiving cavity 31. The inner cavity of the deposition unit 40 is connected to the receiving opening 32. Specifically, the deposition unit 40 may include a deposition cavity 41 and a through hole 42. The deposition cavity 41 is connected to the receiving opening 32 through the through hole 42. The deposition cavity 41 is used to house the substrate 200. The carrier gas M1 carrying the raw material gas M2 can flow from the receiving opening 32 into the deposition cavity 41, where the raw material gas M2 is deposited on the substrate 200 to form a thin film.

[0052] The vapor deposition apparatus 100 provided in this application embodiment can be used to form a thin film on a substrate 200. The substrate 200 is housed within the cavity of a deposition unit 40. A gas delivery unit 10 receives a carrier gas M1 through an inlet 11, and the carrier gas M1 flows into the housing cavity 31 from an outlet 12. A vaporization unit 20 heats the raw material, causing it to vaporize and form a raw material gas M2, which flows into the housing cavity 31 from a vapor outlet 21. Since the housing cavity 31 is connected to the housing opening 32, the vapor outlet 21, and the outlet 12, the carrier gas M1 carries the raw material gas M2 towards the housing opening 32. During the process of the carrier gas M1 flowing from the inlet 11 through the outlet 12 and the housing cavity 31 to the housing opening 32, the carrier gas M1 flows towards the raw material gas M2 and mixes evenly with it. The raw material gas M2 then flows with the carrier gas M1 from the housing opening 32 to the substrate 200 in the deposition unit 40 to form a thin film on the substrate 200.

[0053] Since the carrier gas M1 does not flow into the vaporization unit 20, the temperature of the carrier gas M1 is not affected by the heating temperature of the vaporization unit 20, thus decoupling the temperature of the carrier gas M1 from the heating temperature of the vaporization unit 20. This not only allows for the adjustment of the efficiency of the raw material gas M2 output from the vapor port 21 by adjusting the heating temperature of the vaporization unit 20, thereby adjusting the deposition efficiency of the raw material gas M2 on the substrate 200, but also allows for the adjustment of the temperature environment when the carrier gas M1 carrying the raw material gas M2 flows to the substrate 200 in the deposition unit 40 by adjusting the temperature of the carrier gas M1 output from the outlet 12 (for example, the temperature of the carrier gas M1 output from the outlet 12 can be adjusted by the heating unit 60), thereby achieving fine control of the film morphology. Moreover, by driving the raw material gas M2 with the carrier gas M1, it is not only beneficial to reduce the pressure of the space around the steam port 21, but also beneficial to improve the efficiency of the raw material gas M2 overflowing from the steam port 21, ensuring that the raw material can be continuously and rapidly vaporized under the heating of the vaporization unit 20, which is beneficial to improve the vaporization efficiency of the raw material; it is also beneficial to improve the efficiency of the raw material gas M2 flowing to the receiving opening 32, which is beneficial to improve the film formation efficiency of forming a thin film on the substrate 200.

[0054] Of course, by adjusting the gas delivery efficiency of the gas source 50, the flow rate of the carrier gas M1 can also be adjusted to regulate the deposition efficiency of the raw material gas M2 on the substrate 200. That is to say, the vapor deposition equipment 100 provided in this application embodiment can achieve fine control of the film morphology by adjusting the heating temperature of the heating unit 60, adjusting the heating temperature of the vaporization unit 20 and the gas delivery efficiency of the gas source 50.

[0055] Furthermore, the design of the air inlets 11 positioned on both sides of the gas delivery unit 10 along its length (e.g., the Z-axis direction shown in the figure) ensures that the carrier gas M1 can flow into the gas delivery unit 10 from both sides along its length and flow towards the air outlet 12, thus achieving bidirectional air intake for the gas delivery unit 10. This avoids the situation where the air outlet 12 has different exhaust efficiencies at both ends along the length of the gas delivery unit 10, which is beneficial to improving the uniformity of the carrier gas M1 output from the air outlet 12, improving the uniformity of the carrier gas M1 carrying the raw material gas M2 flowing into the inner cavity (i.e., the deposition cavity 41) of the deposition unit 40 from the receiving opening 32, and improving the uniformity and film quality of the thin film formed by the raw material gas M2 on the substrate 200.

[0056] In some embodiments, the gas delivery unit 10 extends through the receiving cavity 31 along its length (e.g., the Z-axis direction shown in the figure), while the gas inlet 11 protrudes outside the receiving cavity 31. Specifically, along the length of the gas delivery unit 10, both ends of the gas delivery unit 10 are located outside the receiving cavity 31, and both the first sub-inlet 111 and the second sub-inlet 112 protrude outside the receiving cavity 31. The length of the gas delivery unit 10 is parallel to the length of the receiving opening 32. In this way, the gas outlet 12 of the gas delivery unit 10 can be directly connected to the receiving cavity 31, avoiding the need for complex piping between the gas outlet 12 and the receiving cavity 31, which helps to simplify the structure of the vapor deposition apparatus 100. Furthermore, since the length direction of the gas delivery unit 10 is parallel to the length direction of the receiving opening 32, the distance between the gas outlet 12 and the receiving opening 32 in the length direction of the gas delivery unit 10 can be equal, which is beneficial to improving the uniformity of the carrier gas M1 carrying the raw material gas M2 flowing out of the receiving opening 32, and is beneficial to improving the uniformity and quality of the film.

[0057] In some embodiments, the first gas source 51 and the second gas source 52 are located outside the receiving cavity 31. Specifically, along the length of the gas delivery unit 10, the first gas source 51 and the second gas source 52 are positioned on opposite sides of the gas delivery unit 10. This shortens the path of the carrier gas M1 from the first gas source 51 (second gas source 52) into the gas delivery unit 10, improves the efficiency of the carrier gas M1 flowing into the gas delivery unit 10 from the first gas source 51 (second gas source 52), and ultimately improves the film formation efficiency.

[0058] In some embodiments, the steam port 21 and the receiving cavity 31 are partially connected between the gas delivery unit 10 and the receiving opening 32. In this way, the raw material gas M2 flows into the receiving cavity 31 from the steam port 21, and the carrier gas M1 flows out from the outlet 12 and then purges the raw material gas M2, causing the raw material gas M2 to flow with the carrier gas M1 towards the receiving opening 32. This avoids the transmission of the raw material gas M2 within the gas delivery unit 10. Furthermore, by adjusting the heating temperature of the gas delivery unit 10, the temperature of the carrier gas M1 flowing towards the receiving opening 32 can be adjusted, enabling precise control of the film morphology and facilitating control. Moreover, it helps improve the cleanliness of the gas delivery unit 10, making cleaning of the gas delivery unit 10 easier.

[0059] exist Figure 2 , Figure 3 and Figure 4In the illustrated embodiment, the vaporization unit 20 is housed within the housing cavity 31 and located between the gas delivery unit 10 and the housing opening 32. This improves the space utilization of the gas delivery unit 10, the vaporization unit 20, and the distribution unit 30, facilitating the miniaturization design of the vapor deposition apparatus 100. Furthermore, it avoids complex piping between the vaporization unit 20 and the gas delivery unit 10 and distribution unit 30, simplifying the vapor deposition apparatus 100. Additionally, it shortens the path of the carrier gas M1 carrying the raw material gas M2 to the housing opening 32, preventing temperature drops or condensation on the walls of the housing cavity 31 during long-distance transport, which could lead to low film quality. This improves film quality and reduces the need for heat preservation of the carrier gas M1 and raw material gas M2 via the distribution unit 30. In other embodiments, the vaporization unit 20 may also be located outside the housing cavity 31. Through a pipe that passes through the containment cavity 31, the steam port 21 can also be connected to the portion of the containment cavity 31 located between the gas delivery unit 10 and the containment opening 32.

[0060] In some embodiments, the length direction of the steam port 21 is parallel to the length direction of the gas delivery unit 10 (e.g., the Z-axis direction in the figure). The outlet 12 is located on one side of the steam port 21 in the depth direction (e.g., the Y-axis direction in the figure), and also on one side of the steam port 21 in the width direction (e.g., the X-axis direction in the figure). This ensures that the distance between the outlet 12 and the steam port 21 in the width direction is equal at all points along the length direction of the gas delivery unit 10. This improves the uniformity of the carrier gas M1 output from the outlet 12 in purging the raw material gas M2, and consequently improves the uniformity and quality of the film.

[0061] exist Figure 2 , Figure 3 and Figure 4In the illustrated embodiment, the gas delivery unit 10 is located on one side of the vaporization unit 20 in the width direction of the steam port 21 (e.g., the X-axis direction shown in the figure), and also on one side of the vaporization unit 20 in the depth direction of the steam port 21 (e.g., the Y-axis direction shown in the figure). The depth direction of the outlet 12 is parallel to the width direction of the steam port 21. In the width direction of the steam port 21, the receiving opening 32 is located on the side of the vaporization unit 20 (i.e., the steam port 21) facing away from the gas delivery unit 10 (i.e., the outlet 12). In the depth direction of the steam port 21, the raw material gas M2 output from the steam port 21 flows toward the side of the vaporization unit 20 closest to the gas delivery unit 10. The carrier gas M1 output from the outlet 12 flows along the width direction of the steam port 21 toward the raw material gas M2 and carries the raw material gas M2 toward the receiving opening 32. This avoids the need for significant deflection of the carrier gas M1 carrying the raw material gas M2 towards the receiving opening 32 to ensure it flows along the length direction of the gas delivery unit 10 (e.g., the Z-axis direction in the figure). This reduces the difficulty of the carrier gas M1 carrying the raw material gas M2 towards the receiving opening 32, improves the efficiency of the raw material gas M2 flowing from the receiving opening 32 to the deposition unit 40, and ultimately improves the efficiency of thin film formation on the substrate 200. In some other embodiments, the depth direction of the gas outlet 12 may also be inclined relative to the width direction of the vapor outlet 21 (e.g., the X-axis direction in the figure).

[0062] In some embodiments, there are multiple air outlets 12, which are arranged equidistantly along the length of the gas delivery unit 10 (e.g., the Z-axis direction shown in the figure). These equidistantly arranged air outlets 12 can all output carrier gas M1. This improves the uniformity of the carrier gas M1 output from the gas delivery unit 10, the uniformity of M1 purging the raw material gas M2, and the uniformity of the carrier gas M1 carrying the raw material gas M2 flowing into the inner cavity (i.e., deposition cavity 41) of the deposition unit 40 from the receiving opening 32. Ultimately, this improves the uniformity of the thin film and the quality of the deposited film.

[0063] In some embodiments, along the length direction of the gas delivery unit 10 (e.g., the Z-axis direction shown in the figure), the distance between the first sub-inlet 111 (i.e., the inlet 11 on one side of the gas delivery unit 10) and the outlet 12 is equal to the distance between the second sub-inlet 112 (i.e., the inlet 11 on the other side of the gas delivery unit 10) and the outlet 12. This ensures that the efficiency of the carrier gas M1 flowing from the first sub-inlet 111 (i.e., the inlet 11 on one side of the gas delivery unit 10) to the outlet 12 is the same as the efficiency of the carrier gas M1 flowing from the second sub-inlet 112 (i.e., the inlet 11 on the other side of the gas delivery unit 10) to the outlet 12, which is beneficial for improving the uniformity of the carrier gas M1 output from the outlet 12, and thus for improving the uniformity of the film and the film formation quality.

[0064] exist Figure 2 , Figure 3 and Figure 4 In the illustrated embodiment, along the length direction of the gas delivery unit 10 (e.g., the Z-axis direction shown in the figure), the minimum distance between the first sub-inlet 111 and the plurality of outlets 12, and the minimum distance between the second sub-inlet 112 and the plurality of outlets 12, are equal. This ensures that the efficiency of the carrier gas M1 flowing from the first sub-inlet 111 to the plurality of outlets 12 is the same as the efficiency of the carrier gas M1 flowing from the second sub-inlet 112 to the plurality of outlets 12, which is beneficial for improving the uniformity of the carrier gas M1 output from the plurality of outlets 12, and thus for improving the uniformity of the film and the film formation quality. In some other embodiments, the number of outlets 12 may also be one, and along the length direction of the gas delivery unit 10, the distance between the first sub-inlet 111 and the outlet 12, and the distance between the second sub-inlet 112 and the outlet 12, are equal.

[0065] In some embodiments, in the depth direction of the steam port 21 (e.g., the Y-axis direction shown in the figure), the steam chamber 22 is located on one side of the steam port 21 and communicates with it, and the heating element 23 is located outside the steam chamber 22 and disposed on the side of the cavity wall of the steam chamber 22 facing away from the steam port 21. Specifically, in the depth direction of the steam port 21, the heating element 23 is disposed between the cavity wall of the steam chamber 22 and the cavity wall of the receiving cavity 31. This avoids direct contact between the heating element 23 and the raw material contained in the steam chamber 22, which is beneficial to improving the uniformity of heating the raw material by the heating element 23 and improving the stability of the raw material gas M2 flowing out of the steam port 21. In other embodiments, the heating element 23 may also be housed within the steam chamber 22.

[0066] In some embodiments, in the depth direction of the vapor port 21 (e.g., the Y-axis direction shown in the figure), the receiving opening 32 is located on one side of the receiving cavity 31 and communicates with the receiving cavity 31, and the receiving opening 32 is located on the side of the vapor port 21 facing away from the gas outlet 12. The depth direction of the receiving opening 32 is parallel to the depth direction of the vapor port 21 (e.g., the Y-axis direction shown in the figure). The depth direction of the vapor port 21 can be parallel to the direction of gravity. Thus, in the depth direction of the vapor port 21, the deposition unit 40 and the substrate 200 can be located below the distribution unit 30, facilitating the flow of the raw material gas M2 along with the carrier gas M1 into the inner cavity (i.e., the deposition cavity 41) of the deposition unit 40, so as to form a thin film on the substrate 200.

[0067] exist Figure 2 , Figure 3 and Figure 4In the illustrated embodiment, since the length direction of the gas delivery unit 10 (e.g., the Z-axis direction in the illustration) is parallel to both the length direction of the steam port 21 and the length direction of the receiving opening 32, and the length direction of the receiving opening 32 is parallel to the length direction of the steam port 21, this ensures that the distance between the steam port 21 and the receiving opening 32 in the width direction (e.g., the X-axis direction in the illustration) of the steam port 21 is equal at all points along its length. This is beneficial for improving the uniformity of the flow of the carrier gas M1 carrying the raw material gas M2 to the receiving opening 32, and for improving the uniformity and film formation quality of the film. The width direction of the receiving opening 32 is parallel to the width direction (e.g., the X-axis direction in the illustration) of the steam port 21. For example, the receiving opening 32 is a slit. In other embodiments, the receiving opening 32 may also include multiple nozzles. These multiple nozzles are arranged sequentially at intervals along the length direction of the steam port 21.

[0068] like Figure 3 , Figure 4 and Figure 5 As shown, in some embodiments, the receiving cavity 31 includes a receiving sub-cavity 311 and a flow channel 312. The vaporization unit 20 and the gas delivery unit 10 are received in the receiving sub-cavity 311. The flow channel 312 includes a first port 3121 and a second port 3122. The first port 3121 communicates with the receiving sub-cavity 311, and the second port 3122 communicates with the receiving opening 32. The cross-sectional area of ​​the first port 3121 is larger than the cross-sectional area of ​​the second port 3122. The carrier gas M1 output from the gas outlet 12 carries the raw material gas M2 output from the steam outlet 21 from the receiving sub-cavity 311 through the first port 3121 into the flow channel 312, and then flows out from the second port 3122 through the receiving opening 32. The structural design of the flow channel 312 is beneficial to reducing the resistance of the carrier gas M1 carrying the raw material gas M2 into the flow channel 312, improving the efficiency of the carrier gas M1 carrying the raw material gas M2 into the flow channel 312, and also improving the flow rate of the carrier gas M1 carrying the raw material gas M2 out of the receiving opening 32, which is beneficial to improving the film formation efficiency of the film.

[0069] exist Figure 3 , Figure 4 and Figure 5In the illustrated embodiment, the receiving cavity 31 includes a first cavity wall 313, a second cavity wall 314, a third cavity wall 315, a fourth cavity wall 316, two fifth cavity walls 317, and a flow guide 318. In the width direction of the steam outlet 21 (e.g., the X-axis direction shown in the figure), the first cavity wall 313 and the second cavity wall 314 are opposite to each other and spaced apart. In the depth direction of the steam outlet 21 (e.g., the Y-axis direction shown in the figure), the third cavity wall 315 and the fourth cavity wall 316 are opposite to each other and spaced apart. Both the third cavity wall 315 and the fourth cavity wall 316 are located between the first cavity wall 313 and the second cavity wall 314. In the length direction of the steam outlet 21 (e.g., the Z-axis direction shown in the figure), the two fifth cavity walls 317 are opposite to each other and spaced apart. A fifth cavity wall 317 is disposed on one side of the first cavity wall 313, the second cavity wall 314, the third cavity wall 315, and the fourth cavity wall 316, and another fifth cavity wall 317 is disposed on the other side of the first cavity wall 313, the second cavity wall 314, the third cavity wall 315, and the fourth cavity wall 316. A flow guide 318 is disposed on the side of the fourth cavity wall 316 facing the third cavity wall 315 and is spaced apart from the third cavity wall 315. In the width direction of the steam outlet 21 (e.g., the X-axis direction shown in the figure), the flow guide 318 is located between the first cavity wall 313 and the second cavity wall 314. Both the second cavity wall 314 and the flow guide 318 are inclined relative to the fourth cavity wall 316 towards the first cavity wall 313.

[0070] The angle between the second cavity wall 314 and the fourth cavity wall 316 is greater than the angle between the guide portion 318 and the fourth cavity wall 316. The guide portion 318 divides the receiving cavity 31 into a receiving sub-cavity 311 and a flow channel 312. In the width direction of the steam port 21 (e.g., the X-axis direction shown in the figure), the flow channel 312 is located on one side of the receiving sub-cavity 311 and communicates with it. The flow channel 312 is located between the guide portion 318 and the second cavity wall 314. The vaporization unit 20 and the gas delivery unit 10 are sequentially arranged on the side of the guide portion 318 facing away from the second cavity wall 314. The receiving opening 32 penetrates the fourth cavity wall 316 along the depth direction of the steam port 21 (e.g., the Z-axis direction shown in the figure) and communicates with the flow channel 312. This results in a simple, stable structure that is easy to design. In other embodiments, multiple baffles can also be provided in the receiving cavity 31 to form the receiving sub-cavity 311 and the flow channel 312.

[0071] In some embodiments, in the depth direction of the receiving opening 32 (e.g., the Y-axis direction shown in the figure), the deposition unit 40 is disposed on one side of the distribution unit 30, and the through hole 42 connects the deposition chamber 41 and the receiving opening 32. The deposition chamber 41 is provided with a support stage 43. In the depth direction of the receiving opening 32, the substrate 200 is disposed on the side of the support stage 43 facing the through hole 42. The substrate 200 is slidably connected to the support stage 43 along the width direction of the receiving opening 32 (e.g., the X-axis direction shown in the figure) by means including but not limited to slide rails or grooves. The support stage 43 can heat the substrate 200. During the formation of a thin film on the substrate 200, the substrate 200 slides relative to the support stage 43 along the width direction of the receiving opening 32, ensuring that the raw material gas M2 output from the receiving opening 32 can always flow directly to the substrate 200 along the depth direction of the receiving opening 32 and deposit on the substrate 200.

[0072] Please see Figure 6 and Figure 7 and combined Figure 2 , Figure 3 and Figure 4 , Figure 6 This is a schematic diagram of a processing method for a thin-film photovoltaic cell 1000 provided in an embodiment of this application. Figure 7 This is a schematic diagram illustrating another processing method for a thin-film photovoltaic cell 1000 provided in this application embodiment. It should be noted that... Figure 6 and Figure 7 The dashed box in the figure is used to indicate the fabrication process of the light-absorbing layer 103.

[0073] like Figure 3 , Figure 4 and Figure 6 As shown, based on the aforementioned vapor deposition apparatus 100, this application embodiment also provides a method for processing a thin-film photovoltaic cell 1000. The processing method may include: Step S10: A transparent electrode 101 and a first transport layer 102 are sequentially disposed on a substrate 106 to form a substrate 200. The transparent electrode 101 may be formed by methods including but not limited to sputtering, and the first transport layer 102 may be formed by methods including but not limited to sputtering or coating.

[0074] Step S20: A light-absorbing layer 103 is formed on the substrate 200 using a vapor deposition apparatus 100, wherein the light-absorbing layer 103 is disposed on the side of the first transmission layer 102 facing away from the transparent electrode 101.

[0075] exist Figure 6In the embodiment shown, step S20 may include: step S21, forming a first thin film 1031 on the substrate 200 using a vapor deposition apparatus 100, and fabricating a first workpiece 300; wherein the first thin film 1031 is disposed on the side of the first transport layer 102 facing away from the transparent electrode 101.

[0076] Specifically, step S21 may include: S211, accommodating the substrate 200 in the deposition chamber 41; wherein the substrate 200 is slidably connected to the support stage 43 along the width direction of the accommodating opening 32 (e.g., the X-axis direction shown in the figure).

[0077] S212. Evacuate the receiving cavity 31 and heat the substrate 200 through the support stage 43. The heating temperature of the substrate 200 can be in the range of 50°C to 400°C; the vacuum degree of the receiving cavity 31 can be in the range of 10Pa to 500Pa.

[0078] S213, the gas delivery unit 10 receives carrier gas M1 through the inlet 11 and outputs carrier gas M1 through the outlet 12. The temperature of the carrier gas M1 output from the outlet 12 is adjusted by the heating unit 60. The carrier gas M1 can be an inert gas, including but not limited to argon, helium, or nitrogen, and the temperature range of the carrier gas M1 output from the outlet 12 can be 300℃-1000℃. The flow rate range of the carrier gas M1 output from the outlet 12 can be 10 sccm-5000 sccm (standard cubic centimeters per minute).

[0079] S214, the vaporization unit 20 heats the raw material contained in the steam chamber 22 through the heating element 23 to form raw material gas M2, and outputs the raw material gas M2 through the steam port 21 to form a first thin film 1031 on the side of the first transmission layer 102 facing away from the transparent electrode 101. The raw material can be one or more of metal halide-based raw materials, including but not limited to lead halide salts, cesium halide salts, and tin halides. For example, the raw material can be one or more of powders, including but not limited to lead iodide (PbI2), lead bromide (PbBr2), lead chloride (PbCl2), cesium bromide (CsBr), cesium iodide (CsI), cesium chloride (CsCl), tin iodide (SnI2), tin bromide (SnBr2), and tin chloride (SnCl2). The heating temperature range of the raw material can be 100℃-1000℃. Specifically, the heating temperature range of the raw material can be 400℃-1000℃. The first thin film 1031 is an inorganic precursor film. For example, the morphology of the first thin film 1031 can be rod-shaped, columnar, or plate-shaped grains, the thickness of the first thin film 1031 can range from 100 nm (nanometer) to 2000 nm, and the porosity of the first thin film 1031 can be 20% to 65%. The morphology and porosity of the first thin film 1031 can be adjusted by adjusting the temperature and flow rate of the carrier gas M1 output from the gas outlet 12, the heating temperature of the raw materials, and the heating temperature of the substrate 200 by the support stage 43.

[0080] It should be noted that in step S21, steps S211, S212, S213 and step S214 can be executed sequentially; or steps S211 and S212 can be executed sequentially first, and then steps S213 and S214 can be executed simultaneously.

[0081] Step S22: A second thin film 1032 is formed on the side of the first thin film 1031 of the first workpiece 300 facing away from the substrate 200 using a vapor deposition apparatus 100, thereby producing a second workpiece 400.

[0082] Specifically, step S22 may include: S221, accommodating the first workpiece 300 in the deposition chamber 41; wherein the substrate 200 is slidably connected to the support stage 43 along the width direction of the accommodating opening 32 (e.g., the X-axis direction shown in the figure).

[0083] S222, Evacuate the receiving cavity 31 and heat the first workpiece 300 to be processed through the support stage 43.

[0084] S223, the gas delivery unit 10 receives the carrier gas M1 through the air inlet 11 and outputs the carrier gas M1 through the air outlet 12, wherein the temperature of the carrier gas M1 output through the air outlet 12 is adjusted by the heating unit 60.

[0085] In step S224, the vaporization unit 20 heats the raw material contained in the steam chamber 22 through the heating element 23 to form raw material gas M2, and outputs the raw material gas M2 through the steam port 21 to form a second film 1032 on the side of the first film 1031 facing away from the substrate 200, and to produce a second workpiece 400. It should be noted that in step S22, steps S221, S222, S223 and step S224 can be executed sequentially; or steps S221 and S222 can be executed sequentially first, and then steps S223 and S224 can be executed simultaneously.

[0086] Step S22 is similar to step S21, except that in step S224, the raw material contained in the vapor chamber 22 can be one or more organic amine salts, including but not limited to FAI, FABr, and MACl. The second film 1032 is an organic precursor film. The characteristics of the second film 1032 can be referred to the relevant description of the first film 1031, and will not be repeated here.

[0087] In some other embodiments, the second thin film 1032 can also be formed by spraying an organic precursor solution onto the side of the first thin film 1031 facing away from the substrate 200 using a spraying process apparatus. The spraying process apparatus can be, but is not limited to, a spraying device or an inkjet printing device. The organic precursor solution can be an organic amine salt solution; wherein the organic amine salt can be one or more of, but not limited to, FAI, MAI, MABr, FABr, FACl, or MACl, and the solvent can be one or more of, but not limited to, ethanol, isopropanol, or n-butanol.

[0088] Step S23: Anneal the second workpiece 400 to form a light-absorbing layer 103. In this way, by adjusting the morphology and porosity of the first thin film 1031 and the second thin film 1032, the morphology of the light-absorbing layer 103 can be adjusted to improve the photoelectric conversion efficiency of the light-absorbing layer 103.

[0089] Step S30: A second transmission layer 104 and a back electrode 105 are sequentially disposed on the side of the light-absorbing layer 103 facing away from the first transmission layer 102 to form a thin-film photovoltaic cell 1000.

[0090] Specifically, step S30 includes: step S31, depositing a second transport layer 104 on the side of the light-absorbing layer 103 facing away from the first transport layer 102. The second transport layer 104 can be fabricated using the vapor deposition apparatus 100 provided in this embodiment. During the fabrication of the second transport layer 104, the raw material gas M2 can be deposited along with the carrier gas M1 on the side of the light-absorbing layer 103 facing away from the substrate 200 to form the second transport layer 104. Alternatively, the second transport layer 104 can also be fabricated by thermal evaporation or atomic deposition.

[0091] Step S32: A passivation layer 107 is formed on the side of the second transport layer 104 opposite to the light-absorbing layer 103. The passivation layer 107 can be formed using the vapor deposition apparatus 100 provided in this embodiment. During the formation of the passivation layer 107, the raw material gas M2 can be deposited along with the carrier gas M1 on the side of the second transport layer 104 opposite to the light-absorbing layer 103 to form the passivation layer 107. Alternatively, the passivation layer 107 can also be formed by thermal evaporation or coating.

[0092] Step S33: A back electrode 105 is formed on the side of the passivation layer 107 facing away from the second transport layer 104, thus forming a thin-film photovoltaic cell 1000. The back electrode 105 can be formed using the vapor deposition apparatus 100 provided in this embodiment. During the fabrication of the back electrode 105, the raw material gas M2 can be deposited along with the carrier gas M1 on the side of the passivation layer 107 facing away from the light-absorbing layer 103 to form the back electrode 105. Alternatively, the back electrode 105 can also be formed by thermal evaporation or sputtering.

[0093] like Figure 3 , Figure 6 and Figure 7 As shown, based on the above-described vapor deposition equipment 100, this application embodiment also provides another method for processing a thin-film photovoltaic cell 1000. Figure 7 The processing method shown is the same as Figure 6 The processing methods shown are similar, but the difference lies in the method by which the light-absorbing layer 103 is formed on the substrate 200 using the vapor deposition equipment 100, i.e., step S20 is different. Figure 7 In the processing method shown, step S20 may include: step S21, forming a first thin film 1031 on the substrate 200 by using a vapor deposition apparatus 100, and making a first workpiece 300 to be processed; wherein, the first thin film 1031 is disposed on the side of the first transport layer 102 facing away from the transparent electrode 101.

[0094] Step S22: A second thin film 1032 is formed on the side of the first thin film 1031 of the first workpiece 300 facing away from the substrate 200 using a vapor deposition apparatus 100, thereby producing a second workpiece 400.

[0095] Step S24: Using a vapor deposition apparatus 100, a third film 1033 and a fourth film 1034 are alternately deposited sequentially on the side of the second film 1032 of the second workpiece 400 facing away from the first film 1031, thus forming a third workpiece 500. The thicknesses of the first film 1031, second film 1032, third film 1033, and fourth film 1034 can range from 50 nm to 120 nm. The fabrication process of the third film 1033 can be the same as that of the first film 1031, and both the first film 1031 and the third film 1033 are inorganic precursor films. The fabrication process of the fourth film 1034 can be the same as that of the second film 1032, and both the second film 1032 and the fourth film 1034 are organic precursor films. Of course, there can be multiple third films 1033 and multiple fourth films 1034, with multiple third films 1033 and multiple fourth films 1034 alternately deposited sequentially on the side of the second film 1032 facing away from the first film 1031. The thickness of the light-absorbing layer 103 can be adjusted by changing the number of the third thin film 1033 and the fourth thin film 1034.

[0096] Step S25: Anneal the third workpiece 500 to form a light-absorbing layer 103. There are various ways to fabricate the light-absorbing layer 103 using a vapor deposition apparatus 100, and a suitable method can be selected according to the requirements.

[0097] Please see Figure 8 and combined Figure 4 , Figure 8 This is a schematic diagram of another vapor deposition apparatus 100 provided in the embodiments of this application.

[0098] like Figure 3 , Figure 4 and Figure 8 As shown, Figure 8 The illustrated embodiments and Figure 3 and Figure 4 The embodiments shown are structurally similar, but differ in the way the air inlet 11 of the air delivery unit 10 is connected to the inner cavity of the air source 50. Figure 8In the illustrated embodiment, the vapor deposition apparatus 100 further includes a flow regulator 70, with the inlet 11 connected to the gas source 50 via the flow regulator 70. Exemplarily, multiple flow regulators 70 are used; one flow regulator 70 is disposed between the inner cavity of the first gas source 51 and the first sub-inlet 111, and another flow regulator is disposed between the inner cavity of the second gas source 52 and the second sub-inlet 112. The inner cavity of the first gas source 51 is connected to the first sub-inlet 111 via one flow regulator 70, and the inner cavity of the second gas source 52 is connected to the second sub-inlet 112 via another flow regulator 70. The flow regulator 70 can be a regulating valve, a shut-off valve, or other valve. Specifically, the flow regulator 70 can include a first valve port 71 and a second valve port 72. The first valve port 71 is connected to the first inlet 111 (second sub-inlet 112), and the second valve port 72 is connected to the inner cavity of the first gas source 51 (second gas source 52). In this way, the flow rate or velocity of the carrier gas M1 output from the outlet 12 can be adjusted by the flow regulating component 70, so as to achieve fine control of the film morphology.

[0099] Understandable. Figure 8 In the illustrated embodiment, the flow regulator 70 can be applied to Figures 1-5 In any of the embodiments shown.

[0100] Please see Figure 9 and Figure 10 and combined Figure 3 , Figure 9 This is a schematic diagram of another vapor deposition apparatus 100 provided in the embodiments of this application. Figure 10 yes Figure 9 The diagram shows a cross-section of the vapor deposition apparatus 100 along line DD.

[0101] like Figure 3 , Figure 9 and Figure 10 As shown, Figure 9 and Figure 10 The illustrated embodiments and Figure 3 The embodiments shown are similar in structure, except that the gas delivery unit 10 has a different structure. Figure 9 and Figure 10In the illustrated embodiment, the gas delivery unit 10 may include a first sub-gas delivery unit 101a and a second sub-gas delivery unit 101b, both of which are partially inserted into the receiving cavity 31 along the length direction of the gas delivery unit 10 (e.g., the Z-axis direction shown in the figure). In the depth direction of the steam port 21 (e.g., the Y-axis direction shown in the figure), the first sub-gas delivery unit 101a and the second sub-gas delivery unit 101b are sequentially disposed on one side of the vaporization unit 20 (i.e., the steam port 21). The gas outlet 12 includes a first sub-gas outlet 121 and a second sub-gas outlet 122, with the first sub-gas outlet 121 disposed in the first sub-gas delivery unit 101a and the second sub-gas outlet 122 disposed in the second sub-gas delivery unit 101b. Specifically, the first sub-outlet 121 is located on the side of the first sub-gas delivery unit 101a facing the vaporization unit 20 (i.e., steam port 21), and the second sub-outlet 122 is located on the side of the second sub-gas delivery unit 101b facing the vaporization unit 20 (i.e., steam port 21). See details for further information. Figure 3 The following describes the relevant features of the air outlet 12 in the illustrated embodiment. The depth directions of both the first sub-air outlet 121 and the second sub-air outlet 122 are parallel to the width direction of the steam outlet 21 (e.g., the X-axis direction shown in the figure). For example, there are multiple first sub-air outlets 121 and multiple second sub-air outlets 122, arranged sequentially at intervals along the length of the gas delivery unit 10. Of course, the number of first sub-air outlets 121 and the number of second sub-air outlets 122 can also be only one.

[0102] The air inlet 11 includes a first sub-air inlet 111 and a second sub-air inlet 112. In the length direction of the air delivery unit 10 (e.g., the Z-axis direction shown in the figure), the first sub-air inlet 111 is located on one side of the first sub-air delivery unit 101a, and the second sub-air inlet 112 is located on the side of the second sub-air delivery unit 101b opposite to the first sub-air inlet 111. There can be multiple air delivery chambers 13, which may include a first air delivery chamber 131 and a second air delivery chamber 132. The first air delivery chamber 131 (second air delivery chamber 132) is located in the first sub-air delivery unit 101a (second sub-air delivery unit 101b), and multiple first sub-air outlets 121 (second sub-air outlets 122) communicate with the first sub-air inlet 111 (second sub-air inlet 112) through the first air delivery chamber 131 (second air delivery chamber 132).

[0103] Both the first air source 51 and the second air source 52 are located outside the first sub-air delivery unit 101a and the second sub-air delivery unit 101b. Along the length of the air delivery unit 10 (e.g., the Z-axis direction shown in the figure), the first air source 51 is located on one side of the first sub-air delivery unit 101a and communicates with the first sub-inlet 111, while the second air source 52 is located on the side of the second sub-air delivery unit 101b opposite to the first air source 51 and communicates with the second sub-inlet 112. The first air source 51 (and the second air source 52) outputs carrier gas M1 to the first sub-air delivery unit 101a (and the second sub-air delivery unit 101b).

[0104] Both the first sub-inlet 111 and the second sub-inlet 112 can receive carrier gas M1, and both the first sub-outlet 121 and the second sub-outlet 122 can output carrier gas M1. The carrier gas M1 output from the first sub-outlet 121 and the second sub-outlet 122 together purge the raw material gas M2 output from the steam port 21. The carrier gas M1 flowing in from one side of the gas delivery unit 10 along its length (e.g., the Z-axis direction shown in the figure) flows into the first sub-gas delivery unit 101a through the first sub-inlet 111, and the carrier gas M1 flowing in from the other side of the gas delivery unit 10 along its length flows into the second sub-gas delivery unit 101b through the second sub-inlet 112. This avoids mutual interference between the two streams of carrier gas M1 flowing in from both sides of the gas delivery unit 10 along its length, which is beneficial to improving the stability of the gas output from the first sub-outlet 121 and the second sub-outlet 122. Furthermore, the outlet directions of the first sub-outlet 121 and the second sub-outlet 122 can be adjusted separately to improve the uniformity of the carrier gas M1 output from the gas delivery unit 10 in purging the raw material gas M2, which is beneficial to improving the uniformity of the film and the film quality. In addition, if the first sub-gas delivery unit 101a or the second sub-gas delivery unit 101b fails, the raw material gas M2 can still flow out from the receiving opening 32 along with the carrier gas M1 to form a film, which is beneficial to improving the operational reliability of the vapor deposition equipment 100.

[0105] In particular, along the length direction of the gas delivery unit 10 (e.g., the Z-axis direction shown in the figure), the minimum distance between the first sub-inlet 111 and the plurality of first sub-outlets 121 is equal to the minimum distance between the second sub-inlet 112 and the plurality of second sub-outlets 122. This is beneficial to improving the uniformity of the purging of the raw material gas M2 by the carrier gas M1 output from the gas delivery unit 10.

[0106] There can be multiple heating units 60. One heating unit 60 covers the outer periphery of the first sub-gas delivery unit 101a, with the first sub-gas outlet 121 exposed outside the heating unit 60. Another heating unit 60 covers the outer periphery of the second sub-gas delivery unit 101b, with the second sub-gas outlet 122 exposed outside the heating unit 60. By using multiple heating units 60, the temperatures of the carrier gas M1 output from the first sub-gas outlet 121 and the carrier gas M1 output from the second sub-gas outlet 122 can be adjusted separately, so as to achieve fine control of the thin film.

[0107] Understandable. Figure 9 and Figure 10 In the illustrated embodiment, the structure of the gas delivery unit 10 can be applied to Figures 1-5 and Figure 8 The illustrated embodiment.

[0108] Please see Figure 11 and combined Figure 9 , Figure 11 This is a schematic diagram of another vapor deposition apparatus 100 provided in the embodiments of this application.

[0109] like Figure 9 and Figure 11 As shown, Figure 11 The illustrated embodiments and Figure 9 The embodiments shown are structurally similar, differing only in the arrangement of the second sub-outlet 122. Figure 11 In the illustrated embodiment, the depth direction of the second sub-outlet 122 is inclined to the width direction (e.g., the X-axis direction in the illustration). Along the direction from the width direction of the steam port 21 to the steam port 21 (e.g., the positive X-axis direction in the illustration), the distance between the axis of the second sub-outlet 122 and the steam port 21 in the depth direction (e.g., the Y-axis direction in the illustration) of the steam port 21 gradually decreases. Figure 11 The dashed line in the diagram is used to indicate the axis of the second sub-outlet 122.

[0110] In this way, the outlet direction of the second sub-outlet 122 can be towards the steam outlet 21, which is beneficial to improving the purging efficiency of the carrier gas M1 output from the second sub-outlet 122 on the raw material gas M2 output from the steam outlet 21, improving the efficiency of the raw material gas M2 moving away from the steam outlet 21 along the width direction of the steam outlet 21 (e.g., the X-axis direction shown in the figure), improving the efficiency of the raw material gas M2 flowing towards the receiving opening 32 with the carrier gas M1, and improving the film formation efficiency of the film.

[0111] Understandable. Figure 11 In the illustrated embodiment, the design of the second sub-outlet 122 can be applied to Figures 1-5 and Figures 8-10In any of the embodiments shown.

[0112] In the above embodiments, the carrier gas M1 output from the outlet 12 of the gas delivery unit 10 purges the raw material gas M2, and the carrier gas M1 carrying the raw material gas M2 then flows out from the receiving opening 32. The raw material gas M2 may also flow into the gas delivery chamber 13 of the gas delivery unit 10. After the carrier gas M1 and the raw material gas M2 are mixed in the gas delivery unit 10, the carrier gas M1 carrying the raw material gas M2 flows from the outlet 12 to the receiving opening 32. The following describes several embodiments in detail.

[0113] Please see Figure 12 and Figure 13 and combined Figure 3 , Figure 12 This is a schematic diagram of another vapor deposition apparatus 100 provided in the embodiments of this application. Figure 13 yes Figure 12 A three-dimensional structural schematic diagram of a portion of the vapor deposition equipment 100 cut along line EE.

[0114] like Figure 3 , Figure 12 and Figure 13 As shown, Figure 12 and Figure 13 The illustrated embodiments and Figure 3 The structures of the embodiments shown are similar, but the differences lie in the way the carrier gas M1 carries the raw material gas M2 to the receiving opening 32, and the different coordination relationships between the gas delivery unit 10, the gasification unit 20, and the heating unit 60. Figure 12 and Figure 13 In the illustrated embodiment, along the length of the gas delivery unit 10, the portion of the gas delivery chamber 13 located between the inlet 11 and the outlet 12 communicates with the steam port 21. Thus, the raw material gas M2 output from the steam port 21 flows into the gas delivery chamber 13 and mixes evenly with the carrier gas M1 received at the inlet 11, before flowing to the outlet 12. The carrier gas M1 carrying the raw material gas M2 exits from the outlet 12 and flows through the receiving chamber 31 to the receiving opening 32. The raw material gas M2, along with the carrier gas M1, flows through the receiving opening 32 to the substrate 200 in the deposition unit 40, causing the raw material gas M2 to deposit on the substrate 200 and form a thin film. By adjusting the length of the gas delivery unit 10, the mixing uniformity of the raw material gas M2 and the carrier gas M1 can be adjusted, which is beneficial for improving the uniformity of the raw material gas M2 flowing with the carrier gas M1 to the receiving opening 32, and thus improving the uniformity and quality of the thin film. The projection of the steam port 21 along its depth direction can be circular, rectangular, or various shapes.

[0115] For example, there are multiple gasification units 20. In the length direction of the gas delivery unit 10 (e.g., the Z-axis direction shown in the figure), the portion of the gas delivery chamber 13 located between the first sub-inlet 111 and the outlet 12 is connected to the steam port 21 of one gasification unit 20, and the portion of the gas delivery chamber 13 located between the second sub-inlet 112 and the outlet 12 is connected to the steam port 21 of another gasification unit 20. In this way, the carrier gas M1 received by the first sub-inlet 111 can be mixed with the raw material gas M2 output from the steam port 21 of one gasification unit 20 before flowing to the outlet 12; the carrier gas M1 received by the second sub-inlet 112 can be mixed with the raw material gas M2 output from the steam port 21 of another gasification unit 20 before flowing to the outlet 12. This avoids situations where the raw material gas M2 output from the steam port 21 of a single gasification unit 20 flows into the gas delivery chamber 13 between the first sub-inlet 111 and the outlet 12, and between the second sub-inlet 112 and the outlet 12. This simplifies the complexity of the pipeline between the gasification unit 20 and the gas delivery unit 10, and also simplifies the vapor deposition equipment 100.

[0116] In some other embodiments, the number of vaporization units 20 may also be one. The portion of the gas delivery chamber 13 located between the second sub-inlet 112 and the outlet 12, and the portion of the gas delivery chamber 13 located between the second sub-inlet 112 and the outlet 12, are both connected to the steam port 21 of a vaporization unit 20.

[0117] exist Figure 12 and Figure 13 In the illustrated embodiment, the vaporization unit 20 is located outside the receiving cavity 31. Specifically, along the length of the gas delivery unit 10 (e.g., the Z-axis direction shown in the figure), one vaporization unit 20 is located on one side of the distribution unit 30, and another vaporization unit 20 is located on the other side of the distribution unit 30. Furthermore, in a direction perpendicular to the length of the gas delivery unit 10 (e.g., the Y-axis direction shown in the figure), multiple vaporization units 20 are located on one side of the gas delivery unit 10. This reduces the volume of the receiving cavity 31, shortens the path of the carrier gas M1 carrying the raw material gas M2 to the receiving opening 32, and avoids the risk of temperature drop or condensation of the carrier gas M1 and raw material gas M2 within the receiving cavity 31, which could lead to low film quality. This improves film quality and reduces the need for heat preservation of the carrier gas M1 and raw material gas M2 through the distribution unit 30. In other embodiments, the vaporization unit 20 may also be housed within the receiving cavity 31, and the vaporization unit 20 is connected to the gas delivery cavity 13 via a pipeline.

[0118] exist Figure 12 and Figure 13In the illustrated embodiment, a heating unit 60 is disposed between the gas source 50 and the gas delivery unit 10 along the length direction (e.g., the Z-axis direction shown in the figure). The air inlet 11 is connected to the inner cavity of the gas source 50 through the heating unit 60. The heating unit 60 is located outside the receiving cavity 31. The heating unit 60 heats the carrier gas M1 output from the gas source 50. The heated carrier gas M1 flows from the air inlet 11 into the gas delivery cavity 13, where it mixes with the raw material gas M2. The carrier gas M1 carrying the raw material gas M2 then flows from the air outlet 12 through the receiving cavity 31 to the receiving opening 32. Thus, the temperature of the carrier gas M1 carrying the raw material gas M2 output from the air outlet 12 can be adjusted by the heating unit 60 to achieve fine control of the thin film. For example, there are multiple heating units 60. One heating unit 60 is disposed between the first gas source 51 and the gas delivery unit 10, and another heating unit 60 is disposed between the second gas source 52 and the gas delivery unit 10. The first sub-inlet 111 is connected to the inner cavity of the first air source 51 through a heating unit 60, and the second sub-inlet 112 is connected to the inner cavity of the second air source 52 through another heating unit 60.

[0119] Understandable, Figure 12 and Figure 13 In the illustrated embodiment, the design of the portion of the gas delivery chamber 13 located between the inlet 11 and the outlet 12 in the longitudinal direction of the gas delivery unit 10 communicating with the steam port 21, and the design of the inlet 11 communicating with the inner cavity of the gas source 50 through the heating unit 60, can be applied to... Figures 1-5 and Figures 8-11 In any of the embodiments shown.

[0120] Please see Figure 14 , Figure 15 and Figure 16 and combined Figure 3 and Figure 12 , Figure 14 This is a schematic diagram of another vapor deposition apparatus 100 provided in the embodiments of this application. Figure 15 yes Figure 14 The diagram shows a cross-section of the vapor deposition apparatus 100 (gas source 50 omitted) along line FF. Figure 16 yes Figure 14 A schematic diagram of the three-dimensional structure of the vapor deposition equipment 100 cut along line GG.

[0121] like Figure 12 , Figure 14 , Figure 15 and Figure 16 As shown, Figure 14 , Figure 15 and Figure 16 The illustrated embodiments and Figure 12The embodiments shown are similar in structure, except that the gas delivery unit 10 has a different structure. Figure 14 , Figure 15 and Figure 16 In the illustrated embodiment, the gas delivery unit 10 includes a first sub-gas delivery unit 101a and a second sub-gas delivery unit 101b. Both the first sub-gas delivery unit 101a and the second sub-gas delivery unit 101b are partially disposed within the receiving cavity 31 along the length direction of the gas delivery unit 10 (e.g., the Z-axis direction shown in the figure). Specifically, in the width direction (e.g., the X-axis direction shown in the figure) of the receiving opening 32, the first sub-gas delivery unit 101a and the second sub-gas delivery unit 101b are disposed on both sides of the receiving opening 32. Specifically, in the depth direction (e.g., the Y-axis direction shown in the figure), both the first sub-gas delivery unit 101a and the second sub-gas delivery unit 101b are located on one side of the receiving opening 32.

[0122] The air outlet 12 includes a first sub-air outlet 121 and a second sub-air outlet 122. The first sub-air outlet 121 is disposed in the first sub-air supply unit 101a, and the second sub-air outlet 122 is disposed in the second sub-air supply unit 101b. Specifically, in a direction perpendicular to the length direction of the air supply unit 10 (e.g., the Z-axis direction shown in the figure), the first sub-air outlet 121 is disposed on one side of the first sub-air supply unit 101a, and the second sub-air outlet 122 is disposed on one side of the second sub-air supply unit 101b. Both the first sub-air outlet 121 and the second sub-air outlet 122 are directly connected to the receiving cavity 31. Both the first sub-air outlet 121 and the second sub-air outlet 122 face the receiving opening 32. For example, there can be multiple first sub-air outlets 121 and multiple second sub-air outlets 122, with multiple first sub-air outlets 121 (second sub-air outlets 122) arranged sequentially at intervals along the length direction of the air supply unit 10. Of course, the number of the first sub-air outlet 121 and the number of the second sub-air outlet 122 can also be 1.

[0123] The air inlet 11 includes a first sub-air inlet 111 and a second sub-air inlet 112. Along the length of the air delivery unit 10 (e.g., the Z-axis direction shown in the figure), the first sub-air inlet 111 is located on one side of the first sub-air delivery unit 101a, and the second sub-air inlet 112 is located on the side of the second sub-air delivery unit 101b opposite to the first sub-air inlet 111. Both the first sub-air inlet 111 and the second sub-air inlet 112 are exposed outside the receiving cavity 31. The first sub-air inlet 111 is connected to the inner cavity of the first air source 51 via a heating unit 60. The second sub-air inlet 112 is connected to the inner cavity of the second air source 52 via another heating unit 60.

[0124] There are multiple air delivery chambers 13. These multiple air delivery chambers 13 may include a first air delivery chamber 131 and a second air delivery chamber 132. The first air delivery chamber 131 is located in the first sub-air delivery unit 101a, and the second air delivery chamber 132 is located in the second sub-air delivery unit 101b. A first sub-inlet 111 is connected to each first sub-outlet 121 through one air delivery chamber 13 (i.e., the first air delivery chamber 131), and a second sub-inlet 112 is connected to each second sub-outlet 122 through another air delivery chamber 13 (i.e., the second air delivery chamber 132). See details for further information. Figure 3 The following is a description of the illustrated embodiment. Specifically, along the length of the gas delivery unit 10 (e.g., the Z-axis direction shown in the figure), the portion of the first gas delivery chamber 131 located between the first sub-inlet 111 and the plurality of first sub-outlets 121 communicates with the steam port 21 of one vaporization unit 20. The portion of the second gas delivery chamber 132 located between the second sub-inlet 112 and the plurality of second sub-outlets 122 communicates with the steam port 21 of another vaporization unit 20.

[0125] The carrier gas M1 output from the first gas source 51, after being heated by a heating unit 60, can flow into the first gas delivery chamber 131 from the first sub-inlet 111. The raw material gas M2 output from the steam port 21 of a vaporization unit 20 can flow into the first gas delivery chamber 131 and mix with the carrier gas M1 received by the first sub-inlet 111. The carrier gas M1 carrying the raw material gas M2 can then flow out from the first sub-outlet 121. The carrier gas M1 output from the second gas source 52, after being heated by another heating unit 60, can flow into the second gas delivery chamber 132 from the second sub-inlet 112. The raw material gas M2 output from the steam port 21 of another vaporization unit 20 can flow into the second gas delivery chamber 132 and mix with the carrier gas M1 received by the second sub-inlet 112. The carrier gas M1 carrying the raw material gas M2 can then flow out from the second sub-outlet 122.

[0126] It is understood that both the first sub-inlet 111 and the second sub-inlet 112 can receive carrier gas, and both the first sub-outlet 121 and the second sub-outlet 122 can output carrier gas M1 carrying raw material gas M2. The carrier gas M1 carrying raw material gas M2 output from the first sub-outlet 121 and the second sub-outlet 122 is mixed evenly in the receiving cavity 31 and then flows out from the receiving opening 32. The carrier gas M1 flowing in from one side of the gas supply unit 10 along its length (e.g., the Z-axis direction shown in the figure) flows into the first sub-gas supply unit 101a through the first sub-inlet 111, mixes with the raw material gas M2, and then flows out from the first sub-outlet 121; the carrier gas M1 flowing in from the other side of the gas supply unit 10 along its length flows into the second sub-gas supply unit 101b through the second sub-inlet 112, mixes evenly with the raw material gas M2, and then flows out from the second sub-outlet 122. This avoids interference between the two carrier gases M1 carrying the raw material gas M2 flowing from both sides of the gas delivery unit 10 along its length towards the gas outlet 12, which helps improve the stability of the gas output from the first sub-outlet 121 and the second sub-outlet 122. Furthermore, the outlet directions of the first sub-outlet 121 and the second sub-outlet 122 can be adjusted separately to improve the uniformity of the carrier gas M1 carrying the raw material gas M2 flowing out of the receiving opening 32, which is beneficial for improving the uniformity of the film and the film formation quality. In addition, if the first sub-gas delivery unit 101a or the second sub-gas delivery unit 101b malfunctions, the raw material gas M2 can still flow out with the carrier gas M1 from the receiving opening 32 to form a film, which helps improve the operational reliability of the vapor deposition equipment 100.

[0127] exist Figure 14 , Figure 15 and Figure 16 In the illustrated embodiment, the distance between the first sub-gas delivery unit 101a and the receiving opening 32 in the width direction of the receiving opening 32 (e.g., the Z-axis direction shown in the figure) is equal to the distance between the second sub-gas delivery unit 101b and the receiving opening 32. This facilitates thorough mixing of the gas output from the first sub-gas outlet 121 and the gas output from the second sub-gas outlet 122 within the receiving cavity 31, which improves the uniformity of gas output from the receiving opening 32 and consequently enhances the uniformity and quality of the film formation. In other embodiments, the distance between the first sub-gas delivery unit 101a and the receiving opening 32 in the width direction of the receiving opening 32 may not be equal to the distance between the second sub-gas delivery unit 101b and the receiving opening 32.

[0128] Understandable. Figure 14 , Figure 15 and Figure 16 In the illustrated embodiment, the structure of the gas delivery unit 10 can be applied to Figure 12 and Figure 13 The illustrated embodiment.

[0129] Please see Figure 17 and combined Figure 14 and Figure 16 , Figure 17 This is a schematic diagram of another vapor deposition apparatus 100 provided in the embodiments of this application.

[0130] like Figure 16 and Figure 17 As shown, Figure 17 The illustrated embodiments and Figure 16 The structures of the illustrated embodiments are similar, except that the depth directions of the first sub-air outlet 121 and the second sub-air outlet 122 are different. Figure 17 In the illustrated embodiment, both the first sub-outlet 121 and the second sub-outlet 122 face the receiving opening 32. The depth direction of the first sub-outlet 121 is inclined relative to the width direction (e.g., the X-axis direction in the illustration). The depth direction of the second sub-outlet 122 is also inclined relative to the width direction of the receiving opening 32. Specifically, in the direction from the first sub-gas delivery unit 101a along the width direction of the receiving opening 32 to the second sub-gas delivery unit 101b (e.g., the positive X-axis direction in the illustration), the distance between the axis of the first sub-outlet 121 and the receiving opening 32 in the depth direction (e.g., the Y-axis direction in the illustration) gradually decreases. In the direction from the second sub-gas delivery unit 101b along the width direction of the receiving opening 32 to the first sub-gas delivery unit 101a (e.g., the negative X-axis direction in the illustration), the distance between the axis of the second sub-outlet 122 and the receiving opening 32 in the depth direction of the receiving opening 32 gradually decreases. This is beneficial for increasing the output of the raw material gas M2 (e.g., the gas carrying the raw material M2) from the first sub-outlet 121. Figure 14 The efficiency of the carrier gas M1 (as shown) flowing to the receiving opening 32 is beneficial to improving the efficiency of the carrier gas M1 carrying the raw material gas M2 output from the second sub-outlet 122 flowing to the receiving opening 32, which is beneficial to improving the film formation efficiency.

[0131] Understandable. Figure 17 In the illustrated embodiment, the design of the first sub-outlet 121 being inclined in the depth direction relative to the width direction (e.g., the X-axis direction shown in the figure) of the receiving opening 32 and the second sub-outlet 122 being inclined in the depth direction relative to the width direction of the receiving opening 32 can be applied to... Figures 12-16 In any of the embodiments shown.

Claims

1. A vapor deposition apparatus, characterized in that, The vapor deposition apparatus includes a gas delivery unit, a vaporization unit, a distribution unit, and a deposition unit. The gas delivery unit includes an inlet and an outlet. The inlet receives carrier gas, and the outlet is connected to the inlet. The vaporization unit includes a steam port for outputting raw material gas. The distribution unit includes a receiving cavity and a receiving opening. The receiving cavity is connected to the receiving opening, the steam port, and the outlet, so that the carrier gas carries the raw material gas to the receiving opening. The inner cavity of the deposition unit is connected to the receiving opening. In the length direction of the gas supply unit, the air inlet is located on both sides of the gas supply unit, and in the direction perpendicular to the length direction of the gas supply unit, the air outlet is located on one side of the gas supply unit.

2. The vapor deposition apparatus according to claim 1, characterized in that, The number of air outlets is multiple, and the multiple air outlets are arranged equidistantly in sequence along the length direction of the air supply unit.

3. The vapor deposition apparatus according to claim 1 or 2, characterized in that, Along the length of the gas delivery unit, the distance between the air inlet and the air outlet on one side of the gas delivery unit is equal to the distance between the air inlet and the air outlet on the other side of the gas delivery unit.

4. The vapor deposition apparatus according to any one of claims 1-3, characterized in that, The gas delivery unit is partially inserted into the receiving cavity along its length, and the air inlet is exposed outside the receiving cavity. The length direction of the gas delivery unit is parallel to the length direction of the receiving opening.

5. The vapor deposition apparatus according to claim 4, characterized in that, The steam port is connected to the portion of the receiving cavity located between the gas delivery unit and the receiving opening.

6. The vapor deposition apparatus according to claim 5, characterized in that, The length direction of the steam inlet is parallel to the length direction of the gas delivery unit. In the depth direction of the steam inlet, the gas outlet is located on one side of the steam inlet, and in the width direction of the steam inlet, the gas outlet is located on one side of the steam inlet.

7. The vapor deposition apparatus according to claim 5 or 6, characterized in that, The vaporization unit is housed in the receiving cavity and is located between the gas delivery unit and the receiving opening.

8. The vapor deposition apparatus according to claim 7, characterized in that, The receiving cavity includes a receiving sub-cavity and a flow channel. The gasification unit and the gas delivery unit are received in the receiving sub-cavity. The flow channel includes a first port and a second port. The first port communicates with the receiving sub-cavity, and the second port communicates with the receiving opening. The cross-sectional area of ​​the first port is greater than the cross-sectional area of ​​the second port.

9. The vapor deposition apparatus according to any one of claims 5-8, characterized in that, The gas delivery unit includes a first sub-gas delivery unit and a second sub-gas delivery unit. In the depth direction of the steam port, the first sub-gas delivery unit and the second sub-gas delivery unit are sequentially arranged on one side of the gasification unit. The gas outlet includes a first sub-gas outlet and a second sub-gas outlet. The first sub-gas outlet is arranged in the first sub-gas delivery unit, and the second sub-gas outlet is arranged in the second sub-gas delivery unit. The air inlet includes a first sub-air inlet and a second sub-air inlet. In the length direction of the air delivery unit, the first sub-air inlet is located on one side of the first sub-air delivery unit, and the second sub-air inlet is located on the side of the second sub-air delivery unit opposite to the first sub-air inlet.

10. The vapor deposition apparatus according to claim 9, characterized in that, In the direction from the second sub-outlet along the width of the steam outlet to the steam outlet, the distance between the axis of the second sub-outlet and the steam outlet in the depth direction of the steam outlet gradually decreases.

11. The vapor deposition apparatus according to claim 4, characterized in that, The gas delivery unit further includes a gas delivery chamber, through which the gas inlet communicates with the gas outlet. In the length direction of the gas delivery unit, the portion of the gas delivery chamber located between the gas inlet and the gas outlet communicates with the steam port.

12. The vapor deposition apparatus according to claim 11, characterized in that, The vaporization unit is located outside the containment cavity.

13. The vapor deposition apparatus according to claim 11 or 12, characterized in that, The gas delivery unit includes a first sub-gas delivery unit and a second sub-gas delivery unit. In the width direction of the receiving opening, the first sub-gas delivery unit and the second sub-gas delivery unit are disposed on both sides of the receiving opening. The gas outlet includes a first sub-gas outlet and a second sub-gas outlet. The first sub-gas outlet is disposed in the first sub-gas delivery unit, and the second sub-gas outlet is disposed in the second sub-gas delivery unit. The air inlet includes a first sub-air inlet and a second sub-air inlet. In the length direction of the air delivery unit, the first sub-air inlet is located on one side of the first sub-air delivery unit, and the second sub-air inlet is located on the side of the second sub-air delivery unit opposite to the first sub-air inlet. There are multiple air delivery chambers. The first sub-air inlet is connected to the first sub-air outlet through one of the air delivery chambers, and the second sub-air inlet is connected to the second sub-air outlet through another air delivery chamber.

14. The vapor deposition apparatus according to claim 13, characterized in that, The first sub-outlet faces the receiving opening, and the depth direction of the first sub-outlet is inclined relative to the width direction of the receiving opening.

15. The vapor deposition apparatus according to any one of claims 11-14, characterized in that, The air inlet includes a first sub-air inlet and a second sub-air inlet. Along the length of the air delivery unit, the first sub-air inlet and the second sub-air inlet are located on both sides of the air delivery unit. There are multiple vaporization units. Along the length of the air delivery unit, the portion of the air delivery chamber located between the first sub-air inlet and the air outlet is connected to the steam port of one of the vaporization units, and the portion of the air delivery chamber located between the second sub-air inlet and the air outlet is connected to the steam port of another vaporization unit.

16. A thin-film photovoltaic cell, characterized in that, The thin-film photovoltaic cell includes a transparent electrode, a first transport layer, a light-absorbing layer, a second transport layer, and a back electrode arranged sequentially. One of the first transport layer and the second transport layer is an electron transport layer, and the other is a hole transport layer. At least one of the light-absorbing layer, the electron transport layer, and the back electrode is fabricated using a vapor deposition apparatus according to any one of claims 1-15.

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