Device and method for measuring charged particle beam, and semiconductor device

Abstract

The invention provides a charged particle beam measuring device, a charged particle beam measuring method and semiconductor equipment, and relates to the technical field of charged particle beam application, the measuring device comprises a shielding part, a current collecting array and a current measuring array, the shielding part comprises a shielding part and a plurality of knife edges, and two adjacent knife edges are arranged on the shielding part at intervals; the current collection array is provided with a plurality of absorption cavities, openings of the plurality of absorption cavities are arranged opposite to the shielding piece, and the absorption cavities are used for collecting the charged particle beams and generating current; the current measurement array is located on the side, away from the shielding piece, of the absorption cavity and used for measuring the intensity of the current generated by the current collection array, the current measurement array directly measures the intensity of the current generated by the current collection array, the kinetic energy of the charged particle beam is prevented from being lost in the process of converting the kinetic energy into other energy, and the energy utilization rate of the charged particle beam is improved. The signal-to-noise ratio of a measurement result is improved, the signal acquisition time is shortened, and high-speed and accurate measurement is realized.

Description

Technical Field

[0001] This application relates to the field of charged particle beam application technology, and in particular to a charged particle beam measurement device, a charged particle beam measurement method, and a semiconductor device. Background Technology

[0002] Charged particle beam technology is a technique that uses electromagnetic fields to accelerate and manipulate charged particles (such as electrons, protons, and ions). These particles are accelerated to high speeds and form a highly concentrated energy beam. This technology is widely used in semiconductor manufacturing equipment, such as high-precision measurement devices. The performance of a charged particle beam system depends on the precise control of various characteristics of the charged particle beam. To accurately control the charged particle beam during system operation, periodic and precise measurements and calibrations of its various characteristics are required. Furthermore, introducing multiple charged particle beams operating in parallel can significantly improve system yield; multi-beam technology has become the optimal approach for maximizing productivity.

[0003] In related technologies, multiple beams of charged particles are converted into multiple light beams using a conversion element. A photosensitive measuring device, such as a camera, is used to detect the beam intensity, and the characteristics of the charged particle beams are determined by the changes in the detected beam intensity. Such a device can achieve parallel measurement of multiple particle beams. However, using a photosensitive measuring device to detect beam intensity requires first converting the kinetic energy of the charged particle beam into light. The quantum efficiency of this conversion process is typically only around 2%, and the inhomogeneity of the conversion element's material can cause fluctuations in the quantum efficiency. Therefore, indirectly feeding back the charged particle beam current intensity by measuring the beam intensity lacks accuracy and consistency in characterizing the current. Summary of the Invention

[0004] This application provides a charged particle beam measurement device, a charged particle beam measurement method, and a semiconductor device to solve the problem of lack of accuracy and consistency in the characterization of current by multi-beam charged particle beam measurement devices.

[0005] In a first aspect, this application provides a measuring device for a charged particle beam, comprising: a shielding member including a shielding portion and a plurality of blades, with two adjacent blades spaced apart from each other in the shielding portion, the shielding portion being used to shield the charged particle beam, and each blade being used to allow a single charged particle beam to pass through; a current collecting array having a first surface, the first surface being disposed opposite to the shielding member, the current collecting array having a plurality of absorption cavities, the openings of the plurality of absorption cavities being located on the first surface, the opening of each absorption cavity corresponding to at least one of the plurality of blades, and the blade corresponding to the opening of each absorption cavity being different from the blade corresponding to any one of the plurality of openings of the plurality of absorption cavities except for the opening of the first absorption cavity, each absorption cavity being used to collect the charged particle beam passing through at least one blade corresponding to the absorption cavity and generate a current; and a current measuring array located on the side of the current collecting array away from the shielding member, the current measuring array being used to measure the current intensity generated by the current collecting array.

[0006] In this way, the current measurement array replaces the electro-optic conversion element and the photosensitive measuring device. The measurement of charged particle beams does not require multiple electro-optic / photoelectric conversions, which helps to improve the signal-to-noise ratio of the measurement results, realizes high-speed and accurate measurement, and solves the problem of lack of accuracy and consistency in the characterization of current by multi-beam charged particle beam measurement devices.

[0007] In one possible implementation, the current measurement array includes multiple current measurement units, each electrically connected to one of the multiple absorption cavities. Each current measurement unit measures the intensity of the analog signal current generated by the absorption cavity corresponding to it. This allows the current magnitudes of multiple charged particle beams to be measured separately, facilitating parallel measurement of multiple charged particle beams, significantly improving measurement efficiency, and reducing the impact of measurement time on the yield of the multi-beam charged particle system.

[0008] In one possible implementation, the current measurement array further includes at least one signal processing element. If the at least one signal processing element is a single element, it is electrically connected to the plurality of current measurement units. This signal processing element is used to digitize the current measured by the plurality of current measurement units to obtain a digital signal current intensity. If the at least one signal processing element is a plurality of signal processing elements, each signal processing element is electrically connected to at least one of the plurality of current measurement units, and the at least one current measurement unit electrically connected to each signal processing element is different from the at least one current measurement unit electrically connected to any other signal processing element among the plurality of signal processing elements. Each signal processing element is used to digitize the current measured by the at least one current measurement unit electrically connected to it to obtain a digital signal current intensity. In this way, the current magnitudes of multiple charged particle beams can be measured separately and processed using the corresponding signal processing elements in the current measurement array. This allows for parallel measurement and signal processing of multiple charged particle beams using the current measurement array, greatly improving measurement efficiency and reducing the impact of measurement time on the yield of the multi-beam charged particle system.

[0009] In one possible implementation, when the at least one signal processing element is a plurality of signal processing elements, the plurality of signal processing elements are electrically connected to the plurality of current measurement units in a one-to-one correspondence. Each signal processing element is used to digitize the current measured by the current measurement unit electrically connected to it to obtain a digital signal current intensity.

[0010] In this way, the current measurement unit and the signal processing element can be set up one-to-one, so that a single signal processing element processes the data of a single current measurement unit, thereby reducing the processing pressure on the signal processing element and improving the efficiency of data processing.

[0011] In one possible implementation, at least two of the plurality of absorption cavities are arranged in a first array on the current collection array, and at least two of the plurality of current measurement units are arranged in a second array on the current measurement array. The arrangement period of the at least two of the plurality of absorption cavities in the first array and the arrangement period of the at least two of the plurality of current measurement units in the second array are different.

[0012] Thus, the arrangement period of at least two absorption cavities in the first array and the arrangement period of at least two current measurement units in the second array are different, which allows for flexible setting of the size of the current collection array and the current measurement array to meet different needs.

[0013] In one possible implementation, at least two of the plurality of blades are arranged in a third array on the shielding member, and the arrangement period of the at least two of the plurality of blades in the third array is the same as the arrangement period of the at least two of the plurality of absorption cavities in the first array, and the at least two of the plurality of blades and the at least two of the plurality of absorption cavities are arranged in a one-to-one correspondence.

[0014] Thus, at least two of the multiple blades are arranged in a third array on the shielding member. The arrangement period of the at least two of the multiple blades in the third array is the same as the arrangement period of the at least two of the multiple absorption cavities in the first array. The at least two of the multiple blades and the at least two of the multiple absorption cavities are arranged in a one-to-one correspondence, which can reduce the possibility of multiple charged particle beams entering a single absorption cavity, thereby improving the measurement accuracy of charged particle beams.

[0015] In one possible implementation, the arrangement period of at least two of the plurality of absorption cavities in the first array is greater than the arrangement period of at least two of the plurality of current measuring units in the second array.

[0016] In this way, the size of the current measurement array can be reduced, and the number of current measurement units in the current measurement array can be greater than the number of absorption cavities, thus allowing redundant current measurement units to be set in the current measurement array.

[0017] In one possible implementation, the measuring device further includes a wiring layer located between the current collecting array and the current measuring array, with each current measuring unit and its corresponding absorption cavity electrically connected via the wiring layer. This allows for flexibility in the connection positions of the current measuring array and the current collecting array, making the charged particle beam measuring device adaptable to various environments and facilitating observation and measurement needs.

[0018] In one possible implementation, at least two of the plurality of absorption cavities are arranged in a first array on the current collection array, and at least two of the plurality of current measurement units are arranged in a second array on the current measurement array. The arrangement period of the at least two of the plurality of absorption cavities in the first array and the arrangement period of the at least two of the plurality of current measurement units in the second array are the same.

[0019] Thus, the arrangement period of at least two of the multiple absorption cavities in the first array is the same as that of at least two of the multiple current measurement units in the second array. This allows the current measurement units and absorption cavities to be directly connected, reducing the influence of the connecting lines on the current measurement. This helps to accurately measure the current collected by a large number of absorption cavities, thereby enabling parallel measurement of multiple charged particle beams and improving the measurement efficiency of charged particle beams.

[0020] In one possible implementation, at least two of the plurality of cutting edges are arranged in a third array on the shielding member, and the arrangement period of the at least two of the plurality of cutting edges in the third array is different from the arrangement period of the at least two of the plurality of absorption cavities in the first array.

[0021] Thus, the arrangement period of at least two of the multiple cutting edges in a third array is different from the arrangement period of at least two of the multiple absorption cavities in a first array. That is, some absorption cavities are set one-to-one with the cutting edges to achieve one-to-one accurate measurement; and / or, some absorption cavities are set one-to-many with the cutting edges to achieve reuse of the absorption cavities and improve the utilization rate of the absorption cavities.

[0022] In one possible implementation, at least two of the plurality of blades are arranged in a third array on the shielding member. The arrangement period of the at least two of the plurality of blades in the third array, the arrangement period of the at least two of the plurality of absorption cavities in the first array, and the arrangement period of the at least two of the plurality of current measuring units in the second array are all the same. The at least two of the plurality of blades and the at least two of the plurality of absorption cavities are arranged in a one-to-one correspondence.

[0023] Thus, at least two of the multiple blades are arranged in a third array on the shielding member. The arrangement period of the at least two blades in the third array, the arrangement period of the at least two absorption cavities in the first array, and the arrangement period of the at least two current measurement units in the second array are all the same. That is, the at least two blades, the at least two absorption cavities, and the at least two current measurement units are arranged in a one-to-one correspondence. This allows the current measurement units and absorption cavities to be directly connected, reducing the influence of the connecting lines on the current measurement. This helps to accurately measure the current collected by a large number of absorption cavities and reduces the possibility of multiple charged particle beams incident in a single absorption cavity, thereby improving the measurement accuracy of charged particle beams.

[0024] In one possible implementation, the shielding element and the current collecting array are spaced apart. This reduces the transmission of vibrations from the current collecting array and the current measuring array to the shielding element, thereby reducing the impact of vibrations at the blade edge on the curve of current intensity versus charged particle beam position, which is beneficial for improving the accuracy of the charged particle beam measurement device.

[0025] In one possible implementation, the measuring device further includes a workpiece macrostage and a workpiece microstage. The workpiece microstage is mounted on the workpiece macrostage. The current collecting array and the current measuring array are both fixedly connected to the workpiece macrostage. The blocking component is fixedly connected to the workpiece microstage. The workpiece microstage is used to move the blocking component relative to the workpiece macrostage. The workpiece microstage is also used to place the workpiece to be processed. Thus, there is no mechanical connection between the blocking component and the current collecting array and the current measuring array, achieving thermal and mechanical decoupling between the blocking component and the current collecting array and the current measuring array. Furthermore, the blocking component can be replaced individually without disassembling the workpiece stage during replacement.

[0026] In one possible implementation, the shielding element is fixedly connected to the current collecting array, and the current collecting array is fixedly connected to the current measuring array. This saves time spent adjusting the measuring device for the charged particle beam during measurement, thereby improving measurement efficiency and reducing the impact of measurement time on the yield of the multi-beam charged particle system.

[0027] In one possible implementation, the measuring device further includes a workpiece stage, on which the current measuring array is mounted, and the workpiece stage is used to hold the workpiece to be processed. In this way, the workpiece stage can move the blocking component, the current collecting array, and the current measuring array as a whole, reducing the difficulty of classification control and helping to improve control efficiency.

[0028] In one possible implementation, the current collecting array is a Faraday cup integrated structure, with each absorption cavity being a Faraday cup. Thus, since the Faraday cup principle is simple and the manufacturing process is mature, using a Faraday cup integrated structure for the current collecting array helps improve the manufacturing efficiency of the current collecting array, thereby contributing to improving the manufacturing efficiency of the charged particle beam measurement device.

[0029] In one possible implementation, the maximum length between any two points on the opening edge of a single absorption cavity is greater than the width of the single charged particle beam and less than or equal to ten times the spacing between any adjacent charged particle beams. Thus, by ensuring that the maximum length between any two points on the opening edge of a single absorption cavity is greater than the width of the single charged particle beam and less than or equal to ten times the spacing between any adjacent charged particle beams, the length of the single absorption cavity in any direction is greater than the width of the single charged particle beam and less than or equal to ten times the spacing between any adjacent charged particle beams. This allows multiple charged particle beams to be incident into at least two absorption cavities, enabling parallel measurement of multiple charged particle beams, significantly improving measurement efficiency, and reducing the impact of measurement time on the yield of the multi-beam charged particle system.

[0030] Secondly, this application provides a method for measuring charged particle beams, which is applied to a charged particle beam measuring device as described in any one of the embodiments of the first aspect. The method includes: a stage moving the shielding member, the current collecting array, and the current measuring array to the position of the charged particle beam, aligning a single blade edge with a single charged particle beam; causing the single charged particle beam and the shielding member to move relative to each other in a direction perpendicular to the extension direction of the single blade edge, the single charged particle beam moving from the shielding portion of the shielding member to the single blade edge; when the single charged particle beam is completely shielded by the shielding portion, maintaining the single charged particle beam stable or shutting off the single charged particle beam; when the single charged particle beam and the shielding member move relative to each other, the absorption cavity corresponding to the single blade edge and the current measuring unit corresponding to the absorption cavity collect and measure the current of the single charged particle beam collected during the scanning process.

[0031] In one possible implementation, after collecting and measuring the current of the single charged particle beam collected during the scanning process, the method further includes: when the extension directions of at least two of the blades are different, causing the single charged particle beam and the shielding member to move relative to each other in a direction perpendicular to the extension directions of the at least two blades; and the absorption cavities corresponding to the at least two blades and the current measuring units corresponding to the absorption cavities corresponding to the at least two blades repeatedly collecting and measuring the current of the single charged particle beam collected during the scanning process.

[0032] In one possible implementation, after collecting and measuring the current of the single charged particle beam collected during the scanning process, the method further includes: the current detection array amplifies and processes the current, and then outputs the current after digital conversion to obtain the characteristic information of the single charged particle beam.

[0033] Thirdly, this application provides a semiconductor device, including a worktable and a charged particle beam measuring device as described in any one of the first aspects of the embodiments above, wherein the charged particle beam measuring device is mounted on the worktable. Attached Figure Description

[0034] Figure 1 This is a schematic diagram of the structure of the charged particle beam measuring device provided in the embodiments of this application; Figure 2 This is a cross-sectional view of the charged particle beam measuring device provided in the first embodiment of this application; Figure 3 This is a cross-sectional view of the charged particle beam measuring device provided in the first embodiment of this application mounted on the workpiece stage; Figure 4This is a cross-sectional view of the charged particle beam measuring device provided in the second embodiment of this application; Figure 5 This is a cross-sectional view of the charged particle beam measuring device provided in the second embodiment of this application mounted on the workpiece stage; Figure 6 This is a cross-sectional view of the charged particle beam measuring device provided in the third embodiment of this application; Figure 7 This is a cross-sectional view of the charged particle beam measuring device provided in the fourth embodiment of this application; Figure 8 This is a cross-sectional view of the charged particle beam measuring device provided in the fifth embodiment of this application; Figure 9 This is a cross-sectional view of the charged particle beam measuring device provided in the sixth embodiment of this application; Figure 10 This is a cross-sectional view of the charged particle beam measuring device provided in the seventh embodiment of this application; Figure 11 This is a cross-sectional view of the charged particle beam measuring device provided in the eighth embodiment of this application; Figure 12 This is a cross-sectional view of the charged particle beam measuring device provided in the ninth embodiment of this application; Figure 13 This is a schematic diagram of the structure of the shielding member and the current collection array when the extension directions of at least two blades are different, as provided in the embodiments of this application. Figure 14 This is a flowchart illustrating the method for measuring charged particle beams provided in the first embodiment of this application. Figure 15 This is a flowchart illustrating the method for measuring charged particle beams provided in the second embodiment of this application; Figure 16 This is a schematic diagram of the structure of the semiconductor device provided in the first embodiment of this application; Figure 17 This is a schematic diagram of the structure of a semiconductor device provided in the second embodiment of this application.

[0035] Explanation of reference numerals in the attached figures: 100-A measuring device for charged particle beams; 10-Shielding component; 11-Shielding part; 12-Knife edge; 20 - Current harvesting array; 21 - First surface; 22 - Absorption cavity; 221 - First insulating layer; 222 - Conductive layer; 23 - Second surface; 30 - Current measurement array; 31 - Current measurement unit; 311 - Second insulating layer; 32 - Signal processing element; 40-Wiring layer; 50-Workpiece stage; 51-Workpiece macro stage; 52-Workpiece micro stage; 521-Micro motor; 60-Workpiece to be processed; 70-Charged particle beam; 80-Semiconductor equipment; 90-Worktable; 110-Electron gun assembly; 120-Beam splitting structure. Detailed Implementation

[0036] The embodiments of this application are described below with reference to the accompanying drawings.

[0037] For ease of understanding, the English abbreviations and related technical terms used in the embodiments of this application will be explained and described below.

[0038] It should be understood that the described embodiments are merely some, not all, of the embodiments in this application. All other embodiments obtained by those skilled in the art based on the embodiments in this application without inventive effort are within the scope of protection of this application.

[0039] The terminology used in the embodiments of this application is for the purpose of describing particular embodiments only and is not intended to be limiting of this application. The singular forms “a,” “the,” and “the” used in the embodiments of this application and the appended claims are also intended to include the plural forms unless the context clearly indicates otherwise.

[0040] It should be understood that the term "and / or" used in this document is merely a description of the same field in the related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, and B alone. Additionally, the character " / " in this document generally indicates that the preceding and following related objects have an "or" relationship.

[0041] It should be understood that the terms "first," "second," etc., used in this application are for distinguishing purposes only and should not be construed as indicating or implying relative importance or order.

[0042] In the description of this application, the terms “center,” “upper,” “lower,” “front,” “rear,” “left,” “right,” “vertical,” “horizontal,” “top,” “bottom,” “inner,” and “outer,” etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0043] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation", "connection" and "joining" should be interpreted broadly, for example, they can be fixed connections, detachable connections, mating connections or integral connections; those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0044] This application provides a charged particle beam measurement device, wherein the charged particle beam is a highly concentrated energy beam formed by accelerating charged particles (such as electrons, protons, ions, etc.) to high speed using an electromagnetic field. Since the wavelength of the charged particle beam is significantly smaller than the wavelength of light, the charged particle beam-based system has higher resolution than optical systems. The charged particle beam measurement device can be applied in the semiconductor manufacturing field, specifically in high-precision measurement equipment. However, the performance of the charged particle beam system depends on the precise control of various characteristics of the charged particle beam, including its position, beam size, beam shape, and current magnitude. Due to factors such as manufacturing tolerances and thermal drift, the actual characteristics of the charged particle beam may have some error relative to the design values. Therefore, in order to accurately control the charged particle beam during system operation, it is necessary to periodically and accurately measure and calibrate the various characteristics of the charged particle beam before using it.

[0045] Furthermore, due to the inherent limitations of charged particle beams in terms of yield compared to optical systems, multiple charged particle beams are typically introduced into the system to operate in parallel in order to improve the yield. Multi-beam charged particle technology has become the optimal approach for maximizing yield. In multi-beam charged particle systems, to reduce the impact of measurement time on yield, higher demands are placed on the charged particle beam measurement system; that is, while ensuring measurement accuracy, high-speed parallel measurement of multiple charged particle beams is also required.

[0046] Please see Figure 1 The charged particle beam measuring device 100 includes a shielding element 10, a current collecting array 20, and a current measuring array 30. For example, the current collecting array 20 and the current measuring array 30 can be connected together.

[0047] The shielding member 10 includes a shielding portion 11 and a plurality of blades 12. Two adjacent blades 12 are spaced apart from each other in the shielding portion 11. The shielding portion 11 is used to shield the charged particle beam 70, and each blade 12 is used to allow a single charged particle beam 70 to pass through. For example, the plurality of blades 12 are multiple openings formed in the shielding member 10.

[0048] As one implementation method, the charged particle beam 70 can be measured using the knife-edge method (KE method).

[0049] For example, when using the knife-edge method, as the charged particle beam 70 moves from the blocking part 11 to the knife edge 12, the charged particle beam 70 gradually moves from being completely blocked by the blocking part 11 to partially passing through the knife edge 12, and then moves until the charged particle beam 70 completely passes through the knife edge 12. The number of knife edges 12 is multiple, so that when the blocking member 10 moves relative to the charged particle beam 70, multiple charged particle beams 70 can pass through at least two knife edges 12 respectively. This facilitates parallel measurement of multiple charged particle beams 70, greatly improves measurement efficiency, and reduces the impact of measurement time on the yield of the multi-beam charged particle system.

[0050] Specifically, the charged particle beam 70 moves in a direction perpendicular to the extension direction of the blade 12, scanning from the open side of the blade 12 to the closed side of the blade 12. The edge of the blade 12 is sharp, which allows the edge of the blade 12 to strictly control the amount of charged particle beam 70 passing through, thereby helping to ensure accurate measurement of the position, beam size and beam shape of the charged particle beam 70.

[0051] In some implementations, multiple blade edges 12 are conductive and grounded. Thus, the blade edges 12 themselves do not affect the focusing of the charged ion beam 70, contributing to improved measurement accuracy.

[0052] It is understandable that by moving the charged particle beam 70 along a direction perpendicular to the extension direction of the blade 12, relevant characteristic data of the charged particle beam 70 in its movement direction can be obtained. By setting blades 12 in different directions and controlling the charged particle beam 70 to scan these blades 12 along directions perpendicular to the extension direction of the blades 12, the beam spot size in different directions can be obtained, thereby fitting the two-dimensional shape of the beam spot. In the direction perpendicular to the extension direction of the blades 12, the length of the blades 12 can be designed according to a multiple of the diameter of the charged particle beam 70, for example, 50 times the diameter of the charged particle beam 70, which helps to ensure that the charged particle beam 70 effectively passes through the blades 12 on the shielding member 10 and enters the absorption cavity 22.

[0053] Optionally, the shielding element 10 can be made of silicon or other substrate materials. Multiple cutting edges 12 are formed on the shielding element 10 using micro-nano fabrication techniques. Any two adjacent cutting edges 12 are spaced apart, so that there is a shielding portion 11 between any two adjacent cutting edges 12. This ensures that the charged particle beam 70 is shielded by the shielding portion 11 before passing through the cutting edges 12. During the fabrication of the cutting edges 12, the period of the array formed by at least two cutting edges 12 can be matched with the spacing (typically on the order of hundreds of micrometers) of adjacent charged particle beams 70, which also helps to ensure the precision of the array structure and position of the cutting edges 12.

[0054] As one implementation, the current harvesting array 20 is a microchannel plate (MCP) detector. For example, a charged particle beam 70 can strike the inner wall of the MCP channel, thereby generating secondary electron multiplication and forming a measurable electron cloud pulse at the exit end. This electron cloud can be collected by the anode, thus achieving current harvesting.

[0055] As one implementation, the current harvesting array 20 is a solid-state sensor. For example, the solid-state sensor is a silicon surface barrier sensor, in which a charged particle beam 70 is injected into the semiconductor depletion layer, generating electron-hole pairs, which are then collected under an applied electric field to achieve current harvesting.

[0056] Please see Figure 1 The current collecting array 20 has a first surface 21, which is disposed opposite to the shielding member 10. The current collecting array 20 has multiple absorption cavities 22, the openings of which are all located on the first surface 21. Each absorption cavity 22's opening corresponds to at least one of multiple blades 12, and the blade 12 corresponding to each absorption cavity 22's opening is different from the blade 12 corresponding to any other opening among the multiple openings of the absorption cavity 22. Each absorption cavity 22 is used to collect charged particle beams passing through at least one blade 12 corresponding to it and generate current. In this way, all charged particle beams 70 passing through the blades 12 can enter the absorption cavity 22, thereby enabling the absorption cavity 22 to collect charged particle beams 70 and generate current. The current collecting array 20 can simultaneously collect multiple charged particle beams 70 and generate current through at least two absorption cavities 22, which is beneficial for parallel measurement of multiple charged particle beams 70, greatly improving measurement efficiency and reducing the impact of measurement time on the yield of the multi-beam charged particle system.

[0057] In some implementations, the current collecting array 20 is a Faraday cup integration, with each absorption cavity 22 being a Faraday cup. A Faraday cup is a device used to measure the intensity of the current in charged particles; the measured current can be used to determine the number of incident electrons or ions. Thus, because the Faraday cup principle is simple and the manufacturing process is mature, using the current collecting array 20 as a Faraday cup integration helps improve the manufacturing efficiency of the current collecting array 20, thereby contributing to improving the manufacturing efficiency of the charged particle beam measuring device 100.

[0058] For example, when the current harvesting array 20 is a Faraday cup integrated structure, each absorption cavity 22 of the current harvesting array 20 can be regarded as a single Faraday cup. Since the charged particle beam 70 has a certain beam spot size and current density distribution, when the charged particle beam 70 is in the transition region partially blocked by the blocking part 11, information such as the beam spot size and the position of the charged particle beam 70 can be obtained from the curve of the current changing with the position of the charged particle beam 70 measured by the absorption cavity 22. The following text will introduce the current harvesting array 20 as a Faraday cup integrated structure.

[0059] In some implementations, the current harvesting array 20 is a monolithic structure, and the absorption cavity 22 is used to absorb the charged particle beam 70; therefore, the material of the absorption cavity 22 should be conductive. The current harvesting array 20 can be made of silicon or other substrate materials, and at least two absorption cavities 22 are formed on the current harvesting array 20 through micro / nano fabrication. For example, the current harvesting array 20 is fabricated using microelectromechanical systems (MEMS) technology. For example, the Faraday cup integrated circuit is fabricated using MEMS technology. For example, the Faraday cup integrated circuit is fabricated using through-silicon via (TSV) technology.

[0060] During the fabrication of the absorption cavity 22, the period of the array formed by at least two absorption cavities 22 can be matched with the spacing (usually in the hundreds of micrometers) of the adjacent charged particle beams 70, which is also beneficial to ensure the precision of the array structure and position of the absorption cavity 22.

[0061] It should be understood that the Faraday cup integrated current collection array 20 has a first surface 21, and the openings of at least two plurality of absorption cavities 22 are located on the first surface 21. The first surface 21 and the shielding member 10 are arranged opposite to each other, that is, the Faraday cup integrated and the charged particle beam 70 are located on opposite sides of the shielding member 10, and the first surface 21 faces the shielding member 10.

[0062] It should be understood that the cutting edge 12 corresponding to the opening of each absorption cavity 22 is different from the cutting edge 12 corresponding to any other opening among the multiple openings of the multiple absorption cavities 22, that is, all the cutting edges 12 corresponding to the opening of each absorption cavity 22 are different from all the cutting edges 12 corresponding to the opening of any other absorption cavity 22.

[0063] Please see Figure 1 The current collecting array 20 has a second surface 23 opposite to the first surface 21. The current measuring array 30 is located on the side of the current collecting array 20 away from the shielding member 10 (i.e., the current measuring array 30 is located on the side opposite to the second surface 23). The current measuring array 30 is used to measure the current intensity generated by the current collecting array 20. Since the current measuring array 30 can measure the current intensity generated by the current collecting array 20, the current collecting array 20 can simultaneously collect multiple charged particle beams 70 using multiple absorption cavities 22 and generate current. Therefore, the current measuring array 30 measures the current intensity of multiple charged particle beams 70. The data acquired by the current measuring array 30 is processed to obtain characteristic data such as the position, beam size, beam shape, and current magnitude of the charged particle beams 70.

[0064] Compared to converting the charged particle beam 70 passing through the blade 12 into a light beam and then detecting and obtaining the characteristic data of the charged particle beam 70, the energy of the charged particle beam 70 does not need to be converted from kinetic energy to light energy and then converted into a charge signal in the circuit by the photosensitive device. This avoids the problem of low quantum efficiency of the charged particle beam 70 in the entire conversion process, and does not require extending the signal acquisition time to ensure a sufficient measurement signal-to-noise ratio. Therefore, it improves the accuracy and consistency of current characterization during the measurement of the charged particle beam 70, and helps to improve the measurement efficiency of the system.

[0065] The current measurement array 30 directly measures the current intensity generated by the current collection array 20, replacing the electro-optic conversion element and photosensitive measuring device. The measurement of the charged particle beam 70 does not require multiple electro-optic / photoelectric conversions, thus avoiding the loss of the kinetic energy of the charged particle beam 70 in the process of converting it into other forms of energy. This helps to improve the signal-to-noise ratio of the measurement results and reduces the signal acquisition time, thereby achieving high-speed and accurate measurement.

[0066] As one implementation, the current measurement array 30 is an application-specific integrated circuit (ASIC) chip. This chip can directly detect multiple currents generated by the current collection array 20, and can amplify and process the detected current data, then digitize and output the data to obtain the characteristic information of the multiple charged particle beams 70, achieving high-speed and accurate measurement of the multiple charged particle beams 70. For example, the ASIC chip can integrate an analog-to-digital converter (ADC); alternatively, the ASIC chip can function as a purely analog chip, outputting analog signals that are converted by an external ADC. As an example, the ASIC chip can be manufactured using silicon-on-insulator (SOI) technology, enabling it to operate at voltages above kilovolts and adapt to the high-voltage environment provided by the charged particle beams 70.

[0067] Since the current measurement array 30 is integrated into an ASIC chip, the current measurement array 30 is smaller in size and can be directly or indirectly electrically connected to the current collection array 20. It also eliminates the process of electrically connecting multiple ammeters to the current collection array 20 separately, which involves many steps, is more delicate, more difficult, and more time-consuming. The ASIC chip ensures the feasibility of directly measuring the current intensity generated by the current collection array 20 and is conducive to improving the installation efficiency of the charged particle beam measurement device 100.

[0068] The charged particle beam measuring device 100 provided in this application includes a shielding member 10, a current collecting array 20, and a current measuring array 30. The shielding member 10 includes a shielding part 11 and a plurality of blades 12. Two adjacent blades 12 are spaced apart from each other in the shielding part 11. The shielding part 11 is used to shield the charged particle beam 70. Each blade 12 is used to allow a single charged particle beam 70 to pass through, so that multiple charged particle beams 70 pass through at least two blades 12 respectively. The current collection array 20 has a first surface 21, which is disposed opposite to the shielding member 10. The current collection array 20 is provided with a plurality of absorption cavities 22, the openings of which are all located on the first surface 21. The opening of each absorption cavity 22 corresponds to at least one of the plurality of blades 12, and the blade 12 corresponding to the opening of each absorption cavity 22 is different from the blade 12 corresponding to any other opening among the plurality of openings of the plurality of absorption cavities 22. Each absorption cavity 22 is used to collect the charged particle beam 70 passing through the at least one blade 12 corresponding to the absorption cavity 22 and generate current, so that the current collection array 20 can simultaneously collect multiple charged particle beams 70 and generate current through at least two absorption cavities 22.

[0069] By positioning the current measuring array 30 on the side of the current collecting array 20 away from the shielding member 10, the current measuring array 30 measures the current intensity generated by the current collecting array 20, thus enabling the current measuring array 30 to directly measure the intensity of the current generated by the current collecting array 20. The current measuring array 30 replaces the electro-optic conversion element and the photosensitive measuring device, eliminating the need for multiple electro-optic / photoelectric conversions in the measurement of the charged particle beam 70. This avoids the loss of kinetic energy of the charged particle beam 70 during conversion into other forms of energy, improving the signal-to-noise ratio of the measurement results and reducing signal acquisition time, thereby achieving high-speed and accurate measurement.

[0070] In one possible implementation, please refer to Figure 1 and Figure 13 The maximum length between any two points on the opening edge of a single absorption cavity 22 is greater than the width of a single charged particle beam 70 and less than or equal to ten times the distance between any two adjacent charged particle beams 70. For example, the maximum length between any two points on the opening edge of a single absorption cavity 22 is less than or equal to 1 mm.

[0071] Since the spacing between adjacent charged particle beams 70 is typically on the order of hundreds of micrometers, to prevent multiple charged particle beams 70 from simultaneously entering the same absorption cavity 22, the size of a single absorption cavity 22 cannot be too large; at the same time, the size of a single absorption cavity 22 should not be too small, otherwise the charged particle beams 70 will not be able to enter. Therefore, by making the maximum length between any two points on the opening edge of a single absorption cavity 22 greater than the width of a single charged particle beam 70 and less than or equal to ten times the spacing between any two adjacent charged particle beams 70, the length of a single absorption cavity 22 in any direction is greater than the width of a single charged particle beam 70 and less than or equal to ten times the spacing between any two adjacent charged particle beams 70. This ensures that multiple charged particle beams 70 can enter at least two absorption cavities 22, thereby realizing parallel measurement of multiple charged particle beams 70, greatly improving measurement efficiency, and reducing the impact of measurement time on the yield of the multi-beam charged particle system.

[0072] Specifically, the charged particle beam 70 can be charged microparticles, and it can be focused and deflected under the influence of an electric field. For example, the charged particle beam 70 is an electron beam. When an electron beam with a certain initial velocity is affected by an electric field or Lorentz force, its direction of motion will change and it will be deflected, thereby achieving the deflection of the electron beam. The deflected electron beam can then be incident into the absorption cavity 22 of the current collecting array 20.

[0073] The maximum length between any two points on the opening edge of different absorption cavities 22 can be the same or different; the spacing between any two adjacent absorption cavities 22 can be the same or different; a single absorption cavity 22 can correspond to only one charged particle beam 70 or to at least two charged particle beams 70; this application does not impose any restrictions on this.

[0074] In one possible implementation, please refer to Figure 1 The current measurement array 30 includes multiple current measurement units 31, which are electrically connected to multiple absorption cavities 22 in a one-to-one correspondence. Each current measurement unit 31 is used to measure the intensity of the analog signal current generated by the absorption cavity 22 corresponding to that current measurement unit 31. In this way, the intensity of the analog signal current generated by each absorption cavity 22 can be detected by the corresponding current measurement unit 31, thereby enabling the analog signal current intensity of multiple charged particle beams 70 to be measured separately. This facilitates the parallel measurement of multiple charged particle beams 70, greatly improves measurement efficiency, and reduces the impact of measurement time on the yield of the multi-beam charged particle system.

[0075] As some implementations, the current measuring units 31 can be arranged in an array on the current measuring array 30, or they can be arranged randomly on the current measuring array 30. The arrangement of the current measuring units 31 will be described later with reference to some implementations.

[0076] The current measurement array 30 is an ASIC chip that integrates at least two current measurement units 31, capable of accurately measuring the current collected by its top electrode. Electrically connecting the ASIC chip to the current collection array 20 enables simultaneous measurement of the current collected by at least two absorption cavities 22 using the current measurement array 30. This allows for parallel measurement of multiple charged particle beams 70, significantly improving measurement efficiency and reducing the impact of measurement time on the yield of the multi-beam charged particle system.

[0077] In one possible implementation, please refer to Figure 1 The current measurement array 30 also includes at least one signal processing element 32.

[0078] When at least one signal processing element 32 is a single signal processing element 32, the signal processing element 32 is electrically connected to a plurality of current measurement units 31. The signal processing element 32 is used to digitize the current measured by the plurality of current measurement units 31 to obtain a digital signal current intensity. When at least one signal processing element 32 is a plurality of signal processing elements 32, each signal processing element 32 is electrically connected to at least one current measurement unit 31 among the plurality of current measurement units 31, and the at least one current measurement unit 31 electrically connected to each signal processing element 32 is different from the at least one current measurement unit 31 electrically connected to any other signal processing element 32 among the plurality of signal processing elements 32. Each signal processing element 32 is used to digitize the current measured by the at least one current measurement unit 31 electrically connected to the signal processing element 32 to obtain a digital signal current intensity.

[0079] For example, the current measurement unit 31 and the signal processing element 32 are both integrated on the current measurement array 30, so that the current measurement array 30 can first measure the current collected by the current collection array 20, and then digitize the current to obtain the current of the charged particle beam 70 passing through the knife edge 12.

[0080] For example, by controlling the relative position of the charged particle beam and the blocking device to change, and measuring the signal on the current measuring unit, a curve of the current intensity changing with the position of the charged particle beam can be obtained. By analyzing the curve, characteristic information of the charged particle beam 70 can be obtained, so that the charged particle beam measuring device 100 can acquire characteristic data such as the position, beam size, beam shape, and current magnitude of the charged particle beam 70.

[0081] In this way, the current magnitudes of multiple charged particle beams can be measured separately and processed using the corresponding signal processing elements 32 in the current measurement array 30. This allows the current measurement array 30 to achieve parallel measurement and signal processing of multiple charged particle beams, greatly improving measurement efficiency and reducing the impact of measurement time on the yield of the multi-beam charged particle system.

[0082] Optionally, the current measurement unit 31 and the signal processing element 32 can be located on different components of the ASIC chip. The current measurement unit 31 and the signal processing element 32 are electrically connected, so that the data measured by the current measurement unit 31 is transmitted to the signal processing element 32, which processes the data and outputs it. Alternatively, the current measurement unit 31 and the signal processing element 32 can be located on the same component of the ASIC chip, that is, the current measurement unit 31 measures the current collected by the current collection array 20, processes the data directly, and then outputs it.

[0083] In one possible implementation, when at least one signal processing element 32 is multiple signal processing elements 32, the multiple signal processing elements 32 are electrically connected to multiple current measurement units 31 in a one-to-one correspondence. Each signal processing element 32 is used to digitize the current measured by the current measurement unit 31 electrically connected to it to obtain a digital signal current intensity.

[0084] In this way, the current measurement unit 31 and the signal processing element 32 can be set up one-to-one, so that a single signal processing element 32 processes the data of a single current measurement unit 31, thereby reducing the processing pressure on the signal processing element 32 and improving the efficiency of data processing.

[0085] In one possible implementation, please refer to Figure 9 , Figure 10 , Figure 11 and Figure 12 At least two of the plurality of absorption cavities 22 are arranged in a first array on the current collection array 20, and at least two of the plurality of current measurement units 31 are arranged in a second array on the current measurement array 30. The arrangement period of the at least two of the plurality of absorption cavities 22 in the first array and the arrangement period of the at least two of the plurality of current measurement units 31 in the second array are different. It should be understood that the number of absorption cavities 22 and the number of current measurement units 31 may be the same or different.

[0086] For example, the arrangement period of the first array is determined by at least one of the following elements: the spacing between any two adjacent absorption cavities 22 within an absorption cavity repeating unit (e.g., an absorption cavity repeating unit includes at least two absorption cavities 22); the arrangement period of the second array is determined by at least one of the following elements: the spacing between any two adjacent current measuring units 31 within a current measuring repeating unit (e.g., a current measuring repeating unit includes at least two current measuring units 31).

[0087] For example, the difference between the arrangement period of the first array and the arrangement period of the second array may include a difference between the spacing between any two adjacent absorption cavities 22 within an absorption cavity repeating unit and the spacing between any two adjacent current measuring units 31 within a current measuring repeating unit; another example is that the difference between the arrangement period of the first array and the arrangement period of the second array may include a difference between the relative positions between any two adjacent absorption cavities 22 within an absorption cavity repeating unit and the relative positions between any two adjacent current measuring units 31 within a current measuring repeating unit; yet another example is that the difference between the arrangement period of the first array and the arrangement period of the second array may include a difference between the edge shape of an absorption cavity repeating unit and the edge shape of a current measuring repeating unit. It should be understood that the difference between the arrangement period of the first array and the arrangement period of the second array may include combinations of the above situations, which are not exhaustively listed here.

[0088] Thus, the arrangement period of at least two absorption cavities 22 in the first array and the arrangement period of at least two current measurement units 31 in the second array are different, which allows for flexible setting of the size of the current collection array 20 and the current measurement array 30 to meet different needs.

[0089] In some implementations, the arrangement period of at least two of the plurality of absorption cavities 22 arranged in a first array is greater than the arrangement period of at least two of the plurality of current measurement units 31 arranged in a second array. For example, the spacing between any two adjacent absorption cavities 22 within an absorption cavity repeating unit is greater than the spacing between any two adjacent current measurement units 31 within a current measurement repeating unit.

[0090] In this way, the size of the current measurement array 30 can be reduced, and the number of current measurement units 31 in the current measurement array 30 can be greater than the number of absorption cavities 22 (i.e., greater than the number of charged particle beams), thereby allowing redundant current measurement units 31 to be set in the current measurement array 30.

[0091] Optional, please refer to Figure 9 , Figure 10 , Figure 11 and Figure 12 The charged particle beam measurement device 100 also includes a wiring layer 40, which is located between the current collection array 20 and the current measurement array 30. Each current measurement unit 31 and the absorption cavity 22 corresponding to the current measurement unit 31 are electrically connected through the wiring layer 40.

[0092] In this configuration, at least two absorption cavities 22 and at least two current measurement units 31 arranged in different array periods can be interconnected. Thus, the wiring layer 40 allows the volume of the current measurement array 30 to be identical to that of the current collection array 20, and also eliminates the need for the current measurement array 30 to be strictly fitted to the second surface 23. This facilitates the deformation of the connection position between the current measurement array 30 and the current collection array 20, thereby adapting the charged particle beam measurement device 100 to various environments and easily meeting the needs of observation and measurement.

[0093] In one possible implementation, please refer to Figure 11 and Figure 12 At least two of the plurality of blades 12 are arranged in a third array on the shielding member 10, and the arrangement period of the at least two of the plurality of blades 12 in the third array is different from the arrangement period of the at least two of the plurality of absorption cavities 22 in the first array. It should be understood that the number of absorption cavities 22 and the number of blades 12 may be the same or different.

[0094] For example, the arrangement period of the third array is determined by at least one of the following elements: the spacing between any two adjacent blades 12 within a blade repeating unit (e.g., a blade repeating unit includes at least two blades 12), the relative position, and the edge shape of the repeating unit.

[0095] For example, the arrangement period of the third array differing from that of the first array may include a difference between the spacing between any two adjacent absorption cavities 22 within a single absorption cavity repeating unit and the spacing between any two adjacent blades 12 within a single blade repeating unit; another example is that the relative positions between any two adjacent absorption cavities 22 within a single absorption cavity repeating unit and the relative positions between any two adjacent blades 12 within a single blade repeating unit; yet another example is that the edge shape of a single absorption cavity repeating unit differs from that of a single blade repeating unit. It should be understood that a difference between the arrangement period of the third array and that of the first array may include combinations of the above situations, which are not exhaustively listed here.

[0096] As one implementation, a single absorption cavity 22 receives only one beam of charged particles 70 at any given time. For example, in the case where a certain absorption cavity 22 corresponds to multiple blades 12, only one beam of charged particles 70 is controlled to be directed toward the absorption cavity 22 at any given time.

[0097] Thus, the arrangement period of at least two of the multiple blades 12 arranged in a third array is different from the arrangement period of at least two of the multiple absorption cavities 22 arranged in a first array. That is, some absorption cavities 22 are set one-to-one with blades 12 to achieve one-to-one accurate measurement; and / or, some absorption cavities 22 are set one-to-many with blades 12 to achieve reuse of absorption cavities 22 and improve the utilization rate of absorption cavities 22.

[0098] As some implementations, the multiple charged particle beams 70 also have an arrangement period. The number of blades 12 and the number of charged particle beams 70 can be the same or different. The arrangement period of at least two blades 12 in a third array can be the same or different from the arrangement period of the multiple charged particle beams 70.

[0099] For example, when at least two of the multiple absorption cavities 22 are arranged in a 3x3 rectangular array, and at least two of the multiple blades 12 are arranged in a 4x3 rectangular array, and the spacing between two adjacent absorption cavities 22 and the spacing between two adjacent blades 12 are not equal, when measuring the charged particle beam 70 using the charged particle beam measuring device 100, at least one blade 12 is positioned opposite to an absorption cavity 22. At least one blade 12 is positioned opposite to an absorption cavity 22, and this absorption cavity 22 is connected to a current measuring unit 31 to form a measuring unit. The charged particle beam 70 is divided into several groups, and one blade 12 of a single measuring unit corresponds to one bundle of charged particle beams 70, allowing for grouped measurements of multiple bundles of charged particle beams 70. When the measurement of one group of charged particle beams 70 is completed, the relative positions of the charged particle beams 70 and the measuring unit are changed so that another group of charged particle beams 70 is positioned one-to-one with the blades 12 of the measuring unit, and the charged particle beams 70 are measured again.

[0100] When performing group measurements on multiple charged particle beams 70, the measurement group can be changed by moving the position of the charged particle beams 70 or by moving the position of the measurement unit. This application does not impose any restrictions on this.

[0101] In one possible implementation, please refer to Figure 9 and Figure 10 At least two of the plurality of blades 12 are arranged in a third array on the shielding member 10. The arrangement period of the at least two of the plurality of blades 12 in the third array is the same as the arrangement period of the at least two of the plurality of absorption cavities 22 in the first array. The at least two of the plurality of blades 12 and the at least two of the plurality of absorption cavities 22 are arranged in a one-to-one correspondence.

[0102] For example, when at least two absorption cavities 22 are arranged in a 3x3 rectangular array, and at least two blades 12 are arranged in a 3x3 rectangular array, and the spacing between two adjacent absorption cavities 22 (e.g., the length of the line connecting the bottom centers of two adjacent absorption cavities 22) is equal to the spacing between two adjacent blades 12, when measuring the charged particle beam 70 using the charged particle beam measuring device 100, the blades 12 are set one-to-one with the absorption cavities 22. One blade 12 is positioned opposite to one absorption cavity 22, and the absorption cavity 22 is connected to a current measuring unit 31 to form a measuring unit. When the arrangement period of multiple charged particle beams 70 is the same as the arrangement period of multiple measuring units, a single measuring unit is set one-to-one with a single charged particle beam 70, thereby directly realizing parallel measurement of the charged particle beam array 70 without the need for group measurement of multiple charged particle beams 70, and the current of all charged particle beams 70 can be measured, improving the measurement efficiency of the charged particle beam 70.

[0103] For example, when the arrangement period of multiple charged particle beams 70 is not the same as the arrangement period of multiple measurement units, the blade 12 of a single measurement unit is aligned with one charged particle beam 70, and the multiple charged particle beams 70 are measured in groups. When the measurement of one group of charged particle beams 70 is completed, the relative positions of the charged particle beams 70 and the measurement units are changed so that another group of charged particle beams 70 is set one-to-one with the blade 12 of the measurement unit, and the charged particle beams 70 are measured again.

[0104] In the above implementation, at least two of the multiple blades 12 are arranged in a third array on the shielding member 10. The arrangement period of the at least two of the multiple blades 12 in the third array is the same as the arrangement period of the at least two of the multiple absorption cavities 22 in the first array. The at least two of the multiple blades 12 and the at least two of the multiple absorption cavities 22 are arranged in a one-to-one correspondence, which can reduce the possibility of multiple charged particle beams incident in a single absorption cavity, thereby improving the measurement accuracy of charged particle beams.

[0105] In one possible implementation, please refer to Figure 2 , Figure 4 , Figure 6 , Figure 7 and Figure 8 At least two of the plurality of absorption cavities 22 are arranged in a first array on the current collection array 20, and at least two of the plurality of current measurement units 31 are arranged in a second array on the current measurement array 30. The arrangement period of the at least two of the plurality of absorption cavities 22 in the first array and the arrangement period of the at least two of the plurality of current measurement units 31 in the second array are the same.

[0106] Thus, the arrangement period of at least two of the multiple absorption cavities 22 in the first array is the same as the arrangement period of at least two of the multiple current measurement units 31 in the second array. This allows the current measurement units 31 and the absorption cavities 22 to be directly connected, reducing the influence of the connecting lines on the current measurement. This helps to accurately measure the current collected by a large number of absorption cavities 22, thereby enabling parallel measurement of multiple charged particle beams 70 and improving the measurement efficiency of the charged particle beams 70.

[0107] Optional, please refer to Figure 7 and Figure 8 At least two of the plurality of blades 12 are arranged in a third array on the shielding member 10, and the arrangement period of the at least two of the plurality of blades 12 in the third array is different from the arrangement period of the at least two of the plurality of absorption cavities 22 in the first array. When measuring the charged particle beam 70 using the charged particle beam measuring device 100, at least one blade 12 is positioned opposite to an absorption cavity 22. At least one blade 12 is positioned opposite to an absorption cavity 22, and the absorption cavity 22 is connected to a current measuring unit 31 to form a measuring unit. The charged particle beam 70 is divided into several groups, and one blade 12 of a single measuring unit corresponds to one bundle of charged particle beam 70, and multiple bundles of charged particle beam 70 are measured in groups. When the measurement of one group of charged particle beam 70 is completed, the relative position of the charged particle beam 70 and the measuring unit is changed so that another group of charged particle beam 70 is positioned one-to-one with the blade 12 of the measuring unit, and the charged particle beam 70 is measured again.

[0108] Thus, the arrangement period of at least two of the multiple blades 12 arranged in a third array is different from the arrangement period of at least two of the multiple absorption cavities 22 arranged in a first array. That is, some absorption cavities 22 are set one-to-one with blades 12 to achieve one-to-one accurate measurement; and / or, some absorption cavities 22 are set one-to-many with blades 12 to achieve reuse of absorption cavities 22 and improve the utilization rate of absorption cavities 22.

[0109] Optional, please refer to Figure 2 , Figure 4 and Figure 6 At least two of the plurality of blades 12 are arranged in a third array on the shielding member 10. The arrangement period of the at least two blades 12 in the third array, the arrangement period of the at least two absorption cavities 22 in the first array, and the arrangement period of the at least two current measuring units 31 in the second array are all the same. The at least two blades 12 and the at least two absorption cavities 22 are arranged in a one-to-one correspondence. That is, the blades 12, absorption cavities 22, and current measuring units 31 are arranged one-to-one, and one blade 12, one absorption cavity 22, and one current measuring unit 31 are connected to form a measuring unit.

[0110] For example, when the arrangement period of multiple charged particle beams 70 is the same as the arrangement period of multiple measurement units, a single measurement unit is set one-to-one with a single charged particle beam 70, thereby directly realizing parallel measurement of the array of charged particle beams 70 without the need to group the multiple charged particle beams 70 for measurement. The current of all charged particle beams 70 can be measured, thus improving the measurement efficiency of the charged particle beams 70.

[0111] For example, when the arrangement period of multiple charged particle beams 70 is not the same as the arrangement period of multiple measurement units, the blade 12 of a single measurement unit is aligned with one charged particle beam 70, and the multiple charged particle beams 70 are measured in groups. When the measurement of one group of charged particle beams 70 is completed, the relative positions of the charged particle beams 70 and the measurement units are changed so that another group of charged particle beams 70 is set one-to-one with the blade 12 of the measurement unit, and the charged particle beams 70 are measured again.

[0112] Thus, at least two of the multiple blades 12 are arranged in a third array on the shielding member 10. The arrangement period of the at least two of the multiple blades 12 in the third array, the arrangement period of the at least two of the multiple absorption cavities 22 in the first array, and the arrangement period of the at least two of the multiple current measuring units 31 in the second array are all the same. That is, the at least two of the multiple blades 12, the at least two of the multiple absorption cavities 22, and the at least two of the multiple current measuring units 31 are set in a one-to-one correspondence. This allows the current measuring units 31 and the absorption cavities 22 to be directly connected, reducing the influence of the connecting lines on the current measurement. This helps to accurately measure the current collected by a large number of absorption cavities 22 and reduces the possibility of multiple charged particle beams 70 entering a single absorption cavity 22, thereby improving the measurement accuracy of the charged particle beams 70.

[0113] In one possible implementation, please refer to Figure 4 and Figure 5 The shielding element 10 and the current collecting array 20 are spaced apart. This ensures that there is a distance between the shielding element 10 and both the current collecting array 20 and the current measuring array 30. Since the current collecting array 20 collects charged particle beams 70 and generates current, and the current measuring array 30 measures the current intensity of multiple charged particle beams 70, both the current collecting array 20 and the current measuring array 30 will vibrate during actual measurement. Separating the shielding element 10 from both the current collecting array 20 and the current measuring array 30 helps reduce the transmission of vibrations from the current collecting array 20 and the current measuring array 30 to the shielding element 10. This reduces the impact of vibrations from the blade edge 12 on the curve of current intensity variation with the position of the charged particle beams 70, thus improving the accuracy of the charged particle beam measuring device 100.

[0114] Optional, please refer to Figure 5The charged particle beam measuring device 100 also includes a workpiece macrostage 51 and a workpiece microstage 52. The workpiece microstage 52 is mounted on the workpiece macrostage 51. The current collecting array 20 and the current measuring array 30 are both fixedly connected to the workpiece macrostage 51. The shielding member 10 is fixedly connected to the workpiece microstage 52. The workpiece microstage 52 is used to drive the shielding member 10 to move relative to the workpiece macrostage 51. The workpiece microstage 52 is used to place the workpiece 60 to be processed. The workpiece macrostage 51 is responsible for driving the workpiece microstage 52, the current collecting array 20, and the current measuring array 30 along... Figure 5 The workpiece micro-stage 52 moves a long distance in the X and Y directions. It is connected to the workpiece macro-stage 51 via a micro motor 521. The micro motor 521 drives the workpiece micro-stage 52, so that the workpiece micro-stage 52 moves relative to the workpiece macro-stage 51 in six degrees of freedom.

[0115] For details, please refer to Figure 5 In the actual measurement process, the workpiece macro stage 51 is moved so that the absorption cavity 22 and the cutting edge 12 are located below the charged particle beam 70. Then, the workpiece micro stage 52 is driven by the micro motor 521 to further align the cutting edge 12 with the charged particle beam 70, which helps to ensure the accuracy of the relative position of the cutting edge 12 and the charged particle beam 70.

[0116] There is no mechanical connection between the shielding component 10 and the current collecting array 20 and the current measuring array 30, which realizes thermal decoupling and mechanical decoupling between the shielding component 10 and the current collecting array 20 and the current measuring array 30. Furthermore, the shielding component 10 can be replaced individually without disassembling the workpiece stage 50 during the replacement process.

[0117] The workpiece microstage 52 also has a workpiece 60 to be processed. The workpiece 60 can be a silicon wafer or photomask to be processed or inspected. The workpiece 60 and the shielding member 10 are set at intervals. After the charged particle beam 70 completes the measurement, the charged particle beam 70 is moved above the workpiece 60 to be processed or inspected.

[0118] In one possible implementation, please refer to Figure 2 and Figure 3 The shielding element 10, the current collecting array 20, and the current measuring array 30 are all fixedly connected, so that the relative positions of the shielding element 10, the current collecting array 20, and the current measuring array 30 remain unchanged. There is no need to adjust the position between the shielding element 10 and the current collecting array 20. This allows the charged particle beam 70 to enter the absorption cavity 22 after passing through the knife edge 12. This helps to save the time of adjusting the charged particle beam measuring device 100 during the measurement process, thereby improving the measurement efficiency and reducing the impact of measurement time on the yield of the multi-beam charged particle system.

[0119] Optional, please refer to Figure 3The charged particle beam measuring device 100 also includes a workpiece stage 50, on which a current measuring array 30 is mounted. The workpiece stage 50 is used to hold the workpiece 60 to be processed. The workpiece stage 50 can drive the shielding member 10, the current collecting array 20, and the current measuring array 30 along... Figure 3 The charged particle beam 70 is moved in the X and Y directions so that the position of the charged particle beam 70 corresponds to the position of the blade 12.

[0120] A groove can be provided on the workpiece stage 50 to accommodate the current collecting array 20 and the current measuring array 30, so that the height of the shielding member 10 is flush with the height of the workpiece 60 to be processed. After the charged particle beam 70 completes the measurement, the charged particle beam 70 is moved above the workpiece 60 to be processed or inspected.

[0121] Thus, the charged particle beam measuring device 100 also includes a workpiece stage 50, on which the current measuring array 30 is mounted. The workpiece stage 50 is used to place the workpiece 60 to be processed. The workpiece stage 50 can drive the shielding member 10, the current collecting array 20 and the current measuring array 30 to move as a whole, which reduces the difficulty of classification control and helps to improve control efficiency.

[0122] As some implementation methods, please refer to Figure 3 The worktable 90 is a platform for processing or inspecting the workpiece 60. When the charged particle beam measuring device 100 includes a workpiece stage 50, the workpiece stage 50 and the worktable 90 can be an integrated structure, or the workpiece stage 50 can be mounted on the worktable 90.

[0123] As some implementation methods, please refer to Figures 2 to 13 Each absorption cavity 22 has a conductive layer 222, which at least partially covers the cavity wall of the corresponding absorption cavity 22. Each conductive layer 222 is connected to a corresponding current measuring unit 31 for inputting the collected current into the corresponding current measuring unit 31. For example, the conductive layer 222 is obtained by coating.

[0124] For example, multiple conductive layers 222 are connected one-to-one with multiple current measuring units 31; or, for another example, a first number of conductive layers 222 are connected to one current measuring unit 31, and a second number of conductive layers 222 are connected to another current measuring unit 31; or, for yet another example, a first number of conductive layers 222 are connected to one current measuring unit 31, and a second number of conductive layers 222 are connected one-to-one with a second number of current measuring units 31. For example, both the first and second numbers are greater than or equal to 1.

[0125] In some implementations, the conductive layer 222 does not contact the shielding member 10. This prevents the current collected in the absorption cavity 22 from flowing to the shielding member 10, thus helping to improve the accuracy of current measurement.

[0126] As some implementation methods, please refer to Figures 2 to 8 When at least two of the multiple absorption cavities 22 are arranged in a first array with the same arrangement period and at least two of the multiple current measuring units 31 are arranged in a second array with the same arrangement period, the conductive layer 222 at the bottom of each absorption cavity 22 is in contact with the corresponding current measuring unit 31; as for other embodiments, please refer to Figures 9 to 12 In cases where at least two of the multiple absorption cavities 22 are arranged in a first array and at least two of the multiple current measurement units 31 are arranged in a second array with different arrangement periods (e.g., connected by wiring layer 40), the conductive layer 222 at the bottom of each absorption cavity 22 is in contact with the electrode corresponding to the wiring layer 40 so that the current collected by the absorption cavity 22 is input to the current measurement unit 31 corresponding to the absorption cavity 22 through the electrode.

[0127] As some implementation methods, please refer to Figures 2 to 12 A first insulating layer 221 is provided between any two absorption cavities 22; and / or a second insulating layer 311 is provided between any two current measuring units 31. In this way, the electrical isolation between the absorption cavities 22 and / or between the current measuring units 31 can be enhanced, thereby helping to improve the accuracy of current measurement.

[0128] This application also provides a method for measuring a charged particle beam 70; please refer to [link to relevant documentation]. Figure 1 and Figure 14 The method for measuring the charged particle beam 70 is applied to the charged particle beam measuring apparatus 100 as described in any of the embodiments of the first aspect, and the method includes: Step S10: The worktable moves the shielding component 10, the current collection array 20 and the current measurement array 30 to the position of the charged particle beam 70, so that the single blade 12 and the single charged particle beam 70 are aligned. Step S20: The single charged particle beam 70 and the blocking member 10 are moved relative to each other in a direction perpendicular to the extension direction of the single blade 12. The single charged particle beam 70 is moved from the blocking part 11 of the blocking member 10 to the single blade 12. When the single charged particle beam 70 is completely blocked by the blocking part 11, the single charged particle beam 70 is kept stable or the single charged particle beam 70 is turned off. Step S30: When the single charged particle beam 70 and the shielding member 10 move relative to each other, the absorption cavity 22 corresponding to the single blade 12 and the current measurement unit 31 corresponding to the absorption cavity 22 collect and measure the current of the single charged particle beam 70 collected during the scanning process.

[0129] As some implementations, the absorption cavity 22 corresponding to the single blade 12 and the current measurement unit 31 corresponding to the absorption cavity 22 collect and measure the current of the charged particle beam 70 collected during the scanning process, triggered by a specific event. For example, the specific event triggering includes, but is not limited to: triggering at a preset time interval; triggering at a preset interval of relative displacement change between the charged particle beam and the blocking member; triggering at a preset interval of relative angle change between the charged particle beam and the blocking member; triggering at a preset interval of change in the current of the collected charged particle beam; and any one of the following triggering by any external signal.

[0130] The following explanation uses the example of having the same arrangement period and number of multiple charged particle beams 70, at least two blades 12, at least two absorption cavities 22, and at least two current measuring units 31. Step S10 establishes a one-to-one correspondence between the charged particle beams 70 and the blades 12; Step S20 causes relative movement between the charged particle beams 70 and the blades 12, gradually moving the charged particle beams 70 from a state completely blocked by the blocking part 11 to a state completely passing through the blades 12, or vice versa; Step S30 causes the absorption cavities 22 to collect the charged particle beams 70 and generate current, and the current measuring unit 31 measures the current intensity generated by the absorption cavities 22, thereby obtaining a curve showing the change in current intensity with the position of the charged particle beams 70 as the charged particle beams 70 scan the blades 12.

[0131] In one possible implementation, please refer to Figure 13 and Figure 15 In step S30: after collecting and measuring the current of the charged particle beam 70 collected during the scanning process, the following steps are also included: Step S40: When the extension directions of at least two blades 12 are different, the single charged particle beam 70 and the shielding member 10 are moved relative to each other in a direction perpendicular to the extension directions of the at least two blades 12. Step S50: The absorption cavity 22 corresponding to the at least two blades 12 and the current measurement unit 31 corresponding to the absorption cavity 22 corresponding to the at least two blades 12 repeatedly collect and measure the current of the single charged particle beam 70 collected during the scanning process.

[0132] As some implementations, the absorption cavities 22 corresponding to the at least two blades 12 and the current measurement units 31 corresponding to the absorption cavities 22 corresponding to the at least two blades 12 repeatedly collect and measure the current of the charged particle beam 70 collected during the scanning process, triggered by a specific event. For example, the specific event triggering includes, but is not limited to: triggering at a preset time interval; triggering at a preset interval of relative displacement change between the charged particle beam and the blocking member; triggering at a preset interval of relative angle change between the charged particle beam and the blocking member; triggering at a preset interval of change in the current of the collected charged particle beam; and any one of the following triggering by any external signal.

[0133] Specifically, the following example illustrates the situation where the arrangement period and number of multiple charged particle beams 70, the arrangement period and number of at least two absorption cavities 22, and the arrangement period and number of at least two current measurement units 31 are all the same. Step S40 is as follows: First, confirm that when a single absorption cavity 22 can collect charged particle beams 70 from at least two blades 12, the extension directions of the at least two blades 12 corresponding to the single absorption cavity 22 are different. Then, make the multiple charged particle beams 70 follow a direction perpendicular to the extension direction of one blade 12 to complete steps S10, S20, and S30. Then, make the multiple charged particle beams 70 follow a direction perpendicular to the extension direction of another blade 12 to complete steps S10, S20, and S30, until the multiple charged particle beams 70 sequentially scan at least two blades 12 within a single absorption cavity 22. Step S50 is as follows: During step S40, a specific event is always triggered to cause the absorption cavity 22 to collect the charged particle beam 70 and generate current. The current measurement unit 31 measures the current intensity generated by the absorption cavity 22, thereby obtaining the curve of the current intensity changing with the position of the charged particle beam 70 when the charged particle beam 70 scans the blade 12 in different directions.

[0134] In one possible implementation, please refer to Figure 14 and Figure 15 After step S30 or step S50: collecting and measuring the current of the single charged particle beam 70 collected during the scanning process, the following steps are also included: Step S60: The current measurement array 30 amplifies and processes the current, and then outputs the current after digital conversion to obtain the characteristic information of a single charged particle beam 70.

[0135] Specifically, after step S30 or step S50, step S60 causes the signal processing element 32 to process and output the data of the current intensity measured by the current measurement unit 31, thereby obtaining the characteristic information of a single charged particle beam 70, so that the charged particle beam measuring device 100 can acquire characteristic data such as the position, beam size, beam shape, and current magnitude of a single charged particle beam 70.

[0136] As one implementation, taking a charged particle beam 70 as a Gaussian particle beam as an example, the current density of this Gaussian particle beam follows a Gaussian distribution. When the Gaussian particle beam scans the blade edge in a direction perpendicular to the blade edge, the relationship between the current intensity (I) passing through the blade edge and the scanning distance (x) of the Gaussian particle beam satisfies: .

[0137] Here, bkg represents the background noise, amp represents the current of the Gaussian particle beam when it is not blocked by the blade, erfc is the complementary error function, x_0 is the distance between the blade and the scanning start point, and σ is determined by the beam size. For example, the complementary error function can be used to fit the measured current change curve to obtain the beam size (FW50 = 1.35σ) and the position of the Gaussian particle beam relative to the blade edge (x_0). By setting blades in different directions and controlling the Gaussian particle beam to scan these blades in different directions, the beam size in different directions can be obtained, thereby fitting the two-dimensional shape of the beam. Here, FW50 (Full width containing 50% of the charged particles) represents the full width diameter containing 50% of the charged particles.

[0138] This application also provides a semiconductor device, including a worktable and a charged particle beam measuring device according to any one of the first aspects of the embodiments described above, wherein the charged particle beam measuring device is mounted on the worktable. For some embodiments, please refer to... Figure 16 The semiconductor device 80 includes a stage 90 and a charged particle beam measuring device 100, which is mounted on the stage 90.

[0139] For example, semiconductor equipment 80 can be equipment for high-precision measurement and other processes using charged particle beam 70 technology, and worktable 90 is a platform for processing or inspecting workpiece 60. When the charged particle beam measuring device 100 includes workpiece stage 50, workpiece stage 50 and worktable 90 can be an integrated structure, or workpiece stage 50 can be mounted on worktable 90.

[0140] As some implementation methods, please refer to Figure 17The semiconductor device 80 may include an electron gun assembly 110, a beam splitter structure 120, and a charged particle beam measuring device 100. The electron gun assembly 110 emits a charged particle beam 70. The beam splitter structure 120 is located downstream of the electron gun assembly 110 and is used to split the collimated charged particle beam 70 into multiple charged particle beams 70. The shielding member 10 of the charged particle beam measuring device 100 is located downstream of the beam splitter structure 120. The charged particle beam 70 can be focused and deflected under the action of an electric field. When the voltages on the electrodes are different, curved equipotential surfaces and electric field lines are formed between the electrodes, causing the path of the charged particle beam 70 to bend. By changing the voltage distribution between the electrodes, the degree of curvature of the equipotential surfaces can be changed, thereby achieving electron beam focusing. When the charged particle beam 70 is affected by an electric field or Lorentz force, its direction of motion changes and it is deflected, thereby achieving the deflection of the charged particle beam 70. Controlling the deflection of the charged particle beam 70 allows it to move from the shielding part 11 to the blade edge 12, and then enter the absorption cavity 22 of the current collecting array 20 from the blade edge 12. For example, the semiconductor device 80 may include a stage 90, a charged particle beam measuring device 100, an electron gun assembly 110, and a beam splitting structure 120.

[0141] It is understood that the semiconductor device in this embodiment has the charged particle beam measuring device in the above embodiments. Therefore, the semiconductor device in this embodiment has all the technical effects of the charged particle beam measuring device in the above embodiments. Since the technical effects of the charged particle beam measuring device have been fully explained in the above embodiments, they will not be repeated here.

[0142] The above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application, and should all be included within the protection scope of this application.

Claims

1. A measuring device for charged particle beams, characterized in that, include: The shielding component includes a shielding part and a plurality of blades, with two adjacent blades spaced apart in the shielding part. The shielding part is used to shield the charged particle beam, and each blade is used to allow a single charged particle beam to pass through. A current collecting array has a first surface, which is disposed opposite to the shielding member. The current collecting array is provided with a plurality of absorption cavities, the openings of which are all located on the first surface. The opening of each absorption cavity corresponds to at least one of the plurality of blades, and the blade corresponding to the opening of each absorption cavity is different from the blade corresponding to any one of the plurality of openings of the plurality of absorption cavities except for the opening of the blade. Each absorption cavity is used to collect the charged particle beam passing through at least one blade corresponding to the absorption cavity and generate current. A current measuring array is located on the side of the current collecting array away from the shielding member, and the current measuring array is used to measure the current intensity generated by the current collecting array.

2. The measuring device as described in claim 1, characterized in that, The current measurement array includes multiple current measurement units, which are electrically connected to the multiple absorption cavities in a one-to-one correspondence. Each current measurement unit is used to measure the intensity of the analog signal current generated by the absorption cavity corresponding to that current measurement unit.

3. The measuring device as described in claim 2, characterized in that, The current measurement array also includes at least one signal processing element; When the at least one signal processing element is a single signal processing element, the signal processing element is electrically connected to the plurality of current measurement units, and the signal processing element is used to digitize the current measured by the plurality of current measurement units to obtain a digital signal current intensity. When the at least one signal processing element is a plurality of signal processing elements, each signal processing element is electrically connected to at least one current measuring unit among the plurality of current measuring units, and the at least one current measuring unit electrically connected to each signal processing element is different from the at least one current measuring unit electrically connected to any other signal processing element among the plurality of signal processing elements. Each signal processing element is used to digitize the current measured by the at least one current measuring unit electrically connected to the signal processing element to obtain a digital signal current intensity.

4. The measuring device as described in claim 3, characterized in that, When the at least one signal processing element is a plurality of signal processing elements, the plurality of signal processing elements are electrically connected to the plurality of current measurement units in a one-to-one correspondence. Each signal processing element is used to digitize the current measured by the current measurement unit electrically connected to it to obtain a digital signal current intensity.

5. The measuring device according to any one of claims 2-4, characterized in that, At least two of the plurality of absorption cavities are arranged in a first array on the current collection array, and at least two of the plurality of current measurement units are arranged in a second array on the current measurement array. The arrangement period of the at least two of the plurality of absorption cavities in the first array and the arrangement period of the at least two of the plurality of current measurement units in the second array are different.

6. The measuring device as described in claim 5, characterized in that, At least two of the plurality of blades are arranged in a third array on the shielding member. The arrangement period of the at least two of the plurality of blades in the third array is the same as the arrangement period of the at least two of the plurality of absorption cavities in the first array. The at least two of the plurality of blades and the at least two of the plurality of absorption cavities are arranged in a one-to-one correspondence.

7. The measuring device according to claim 5 or 6, characterized in that, The arrangement period of at least two of the plurality of absorption cavities in the first array is greater than the arrangement period of at least two of the plurality of current measuring units in the second array.

8. The measuring device according to any one of claims 2-7, characterized in that, The measuring device further includes a wiring layer located between the current collecting array and the current measuring array, and each current measuring unit and its corresponding absorption cavity are electrically connected through the wiring layer.

9. The measuring device according to any one of claims 2-4, characterized in that, At least two of the plurality of absorption cavities are arranged in a first array on the current collection array, and at least two of the plurality of current measurement units are arranged in a second array on the current measurement array. The arrangement period of the at least two of the plurality of absorption cavities in the first array and the arrangement period of the at least two of the plurality of current measurement units in the second array are the same.

10. The measuring device as described in claim 5 or 9, characterized in that, At least two of the plurality of cutting edges are arranged in a third array on the shielding member, and the arrangement period of the at least two of the plurality of cutting edges in the third array is different from the arrangement period of the at least two of the plurality of absorption cavities in the first array.

11. The measuring device as claimed in claim 9, characterized in that, At least two of the plurality of blades are arranged in a third array on the shielding member. The arrangement period of the at least two of the plurality of blades in the third array, the arrangement period of the at least two of the plurality of absorption cavities in the first array, and the arrangement period of the at least two of the plurality of current measuring units in the second array are all the same. The at least two of the plurality of blades and the at least two of the plurality of absorption cavities are arranged in a one-to-one correspondence.

12. The measuring device according to any one of claims 1-11, characterized in that, The shielding element and the current collecting array are spaced apart.

13. The measuring device according to any one of claims 1-12, characterized in that, The measuring device further includes a workpiece macro stage and a workpiece micro stage. The workpiece micro stage is mounted on the workpiece macro stage. The current collecting array and the current measuring array are both fixedly connected to the workpiece macro stage. The shielding component is fixedly connected to the workpiece micro stage. The workpiece micro stage is used to drive the shielding component to move relative to the workpiece macro stage. The workpiece micro stage is also used to place the workpiece to be processed.

14. The measuring device according to any one of claims 1-13, characterized in that, The shielding element is fixedly connected to the current collecting array, and the current collecting array is fixedly connected to the current measuring array.

15. The measuring device as claimed in claim 14, characterized in that, The measuring device also includes a workpiece stage, on which the current measuring array is mounted. The workpiece stage is used to place the workpiece to be processed.

16. The measuring device according to any one of claims 1-15, characterized in that, The current collection array is a Faraday cup integrated structure, with each absorption cavity being a Faraday cup.

17. The measuring device according to any one of claims 1-16, characterized in that, The maximum length between any two points on the opening edge of a single absorption cavity is greater than the width of a single charged particle beam and less than or equal to ten times the distance between any two adjacent charged particle beams.

18. The measuring device according to any one of claims 1-17, characterized in that, The current harvesting array is fabricated using microelectromechanical systems (MEMS) technology.

19. A method for measuring a charged particle beam, characterized in that, The measurement method is applied to the measuring apparatus as described in any one of claims 1 to 18, and the method includes: The worktable moves the shielding component, the current collecting array, and the current measuring array to the position of the charged particle beam, aligning a single blade with a single charged particle beam. The single charged particle beam and the shielding member are moved relative to each other in a direction perpendicular to the extension direction of the single blade. The single charged particle beam is moved from the shielding part of the shielding member to the single blade. When the single charged particle beam is completely shielded by the shielding part, the single charged particle beam is kept stable or the single charged particle beam is turned off. When the single charged particle beam and the shielding member move relative to each other, the absorption cavity corresponding to the single blade and the current measurement unit corresponding to the absorption cavity collect and measure the current of the single charged particle beam collected during the scanning process.

20. The measurement method as described in claim 19, characterized in that, After collecting and measuring the current of the single charged particle beam collected during the scanning process, the method further includes: When at least two of the blades extend in different directions, the single charged particle beam and the shielding member are moved relative to each other in a direction perpendicular to the extension directions of the at least two blades. The absorption cavities corresponding to the at least two blades and the current measurement units corresponding to the at least two blades repeatedly collect and measure the current of the single charged particle beam collected during the scanning process.

21. The measurement method as described in claim 19 or 20, characterized in that, After collecting and measuring the current of the single charged particle beam collected during the scanning process, the method further includes: The current detection array amplifies and processes the current, then digitizes and outputs the current to obtain the characteristic information of the single charged particle beam.

22. A semiconductor device, characterized in that, It includes a worktable and the measuring device according to any one of claims 1 to 18, wherein the measuring device is mounted on the worktable.

Images