Substrate processing apparatus, plasma generating apparatus, substrate processing method, semiconductor device manufacturing method, and program

Abstract

Provided is a technique capable of performing more uniform substrate processing. A substrate processing apparatus includes: a processing chamber for processing a substrate; and a first electrode unit including: a first electrode section having a first electrode to which high-frequency power is applied and a second electrode to which a reference potential is applied, the first electrode and the second electrode having the same length; a second electrode part having the first electrode and the second electrode, the lengths of which are different from those of the first electrode and the second electrode of the first electrode part; and a third electrode part having the first electrode and the second electrode, the lengths of which are different from those of the first electrode and the second electrode of the first electrode part and those of the first electrode and the second electrode of the second electrode part.

Description

Technical Field

[0001] This disclosure relates to a substrate processing apparatus, a plasma generation apparatus, a substrate processing method, a method and procedure for manufacturing a semiconductor device. Background Technology

[0002] As a step in the manufacturing process of semiconductor devices, substrate processing is sometimes performed as follows: the substrate is moved into the processing chamber of the substrate processing apparatus, raw material gas and reaction gas are supplied to the processing chamber, and various films such as insulating film, semiconductor film, and conductor film are formed on the substrate, or various films are removed.

[0003] In mass-produced devices with fine patterns, it is sometimes desirable to use low-temperature materials in order to suppress impurity diffusion or to use materials with low heat resistance, such as organic materials.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2007-324477 Summary of the Invention

[0007] The problem that the invention aims to solve

[0008] To solve this problem, plasma is generally used for substrate treatment, but sometimes it is difficult to achieve uniform treatment of the film.

[0009] This disclosure provides a technique for achieving more uniform substrate processing.

[0010] Methods for solving problems

[0011] According to one aspect of this disclosure, a technology is provided that has:

[0012] Processing chamber, its processing substrate; and

[0013] The first electrode unit includes:

[0014] The first electrode portion has a first electrode and a second electrode of equal length, the first electrode being subjected to high-frequency power and the second electrode being given a reference potential;

[0015] The second electrode portion has a first electrode and a second electrode having lengths different from the first electrode and the second electrode of the first electrode portion; and

[0016] The third electrode portion has first and second electrodes with lengths different from those of the first and second electrodes of the first electrode portion and the first and second electrodes of the second electrode portion.

[0017] Invention Effects

[0018] According to this disclosure, more uniform substrate processing can be performed. Attached Figure Description

[0019] Figure 1 This is a schematic structural diagram of a vertical processing furnace of a substrate processing apparatus preferably used in embodiments of the present disclosure, and is a diagram showing the processing furnace portion in longitudinal section.

[0020] Figure 2 yes Figure 1 A cross-sectional view (AA) of the substrate processing apparatus shown.

[0021] Figure 3 (a) is a perspective view of the electrode in the embodiment of the present disclosure being disposed on the electrode holder. Figure 3 (b) is a diagram showing the positional relationship of the heater, electrode holder, electrode, protrusion of fixed electrode, and reaction tube in the embodiments of this disclosure.

[0022] Figure 4 (a) is a front view of the electrode in an embodiment of this disclosure. Figure 4 (b) is a diagram illustrating the fixing of the electrode to the electrode holder.

[0023] Figure 5 This is a diagram illustrating the height of the electrode portion of the electrode unit in an embodiment of this disclosure.

[0024] Figure 6 yes Figure 1 The schematic diagram of the controller in the substrate processing apparatus shown is a block diagram illustrating an example of a control system for the controller.

[0025] Figure 7 It means that it was used. Figure 1 A flowchart illustrating an example of the substrate processing process of the substrate processing apparatus shown.

[0026] Figure 8 This is a diagram illustrating the height of the electrode portion of the electrode unit in Modification 1 of this disclosure.

[0027] Figure 9 This is a diagram illustrating the height of the electrode portion of the electrode unit in Modification 2 of this disclosure.

[0028] Figure 10 This is a diagram illustrating the height of the electrode portion of the electrode unit in Modification 3 of this disclosure. Detailed Implementation

[0029] The following is for reference Figures 1 to 7Embodiments of this disclosure will be described. Furthermore, the drawings used in the following description are schematic, and the dimensional relationships and scales of the elements shown may not correspond to reality. Additionally, the dimensional relationships and scales of elements may not be consistent across multiple drawings. Unless otherwise specified in the specification, each element is not limited to one and multiple elements may exist.

[0030] (1) Structure of the substrate processing device

[0031] (Heating device)

[0032] like Figure 1 As shown, the processing furnace 202 of the vertical substrate processing apparatus includes a heater 207 as a heating device. The heating device is also called a heating mechanism or heating section. The heater 207 is cylindrical and is vertically mounted by being supported on a holding plate. The heater 207 also functions as an activation mechanism that uses heat to activate (excite) gases. The activation mechanism is also called an excitation section.

[0033] (Processing Room)

[0034] An electrode holder 301 (described later) is disposed inside the heater 207, and an electrode 300 (described later) of the plasma generation unit is disposed inside the electrode holder 301. A reaction tube 203 is disposed concentrically with the heater 207 inside the electrode 300. The reaction tube 203 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC) and is formed into a cylindrical shape with a closed upper end and an open lower end. Below the reaction tube 203, a manifold (manifold box) 209 is disposed concentrically with the reaction tube 203. The manifold 209 is made of a metal such as stainless steel (SUS) and is formed into a cylindrical shape with open upper and lower ends. The upper end of the manifold 209 engages with the lower end of the reaction tube 203, thus supporting the reaction tube 203. An O-ring 220a, serving as a sealing member, is provided between the manifold 209 and the reaction tube 203. By supporting the manifold 209 on the heater base, the reaction tube 203 is mounted vertically. The processing container is mainly composed of the reaction tube 203 and the manifold 209. The processing container is also called a reaction container. A processing chamber 201 is formed in the hollow portion of the processing container. The processing chamber 201 is configured to accommodate multiple wafers 200 as substrates. The wafers 200 are processed in the processing chamber 201. Furthermore, the processing container is not limited to the above structure; sometimes only the reaction tube 203 is referred to as the processing container.

[0035] (Gas Supply Department)

[0036] Inside the processing chamber 201, nozzles 249a and 249b, serving as first and second supply units, are respectively installed through the side wall of the manifold 209. These nozzles are also referred to as the first nozzle and the second nozzle, respectively. The nozzles 249a and 249b are made of heat-resistant materials such as quartz or SiC. Gas supply pipes 232a and 232b are connected to the nozzles 249a and 249b, respectively. Thus, by providing two nozzles 249a and 249b and two gas supply pipes 232a and 232b in the processing container, various gases can be supplied to the processing chamber 201. Furthermore, when only the reaction tube 203 is used as the processing container, the nozzles 249a and 249b can also be arranged to penetrate the side wall of the reaction tube 203.

[0037] Starting from the upstream side of the gas flow, gas supply pipes 232a and 232b are respectively equipped with: mass flow controllers (MFCs) 241a and 241b as flow controllers, and valves 243a and 243b as on / off valves. The flow controllers are also called flow control units. Gas supply pipes 232c and 232d for supplying inert gas are connected to gas supply pipes 232a and 232b downstream of valves 243a and 243b, respectively. Starting from the upstream side of gas supply pipes 232c and 232d, MFCs 241c and 241d and valves 243c and 243d are respectively installed.

[0038] like Figure 1 , Figure 2 As shown, nozzles 249a and 249b, when viewed from above, form an annular space between the inner wall of the reaction tube 203 and the wafer 200. They are respectively positioned so that they rise vertically from the lower part of the inner wall of the reaction tube 203 along the loading direction towards the wafer 200. That is, nozzles 249a and 249b are respectively positioned perpendicularly to the surface (flat surface) of each wafer 200 being fed into the processing chamber 201, on the side of its end (i.e., peripheral portion). Gas supply holes 250a and 250b are respectively provided on the sides of nozzles 249a and 249b for supplying gas. Gas supply holes 250a open towards the center of the reaction tube 203, allowing gas to be supplied to the wafer 200. Multiple gas supply holes 250a and 250b are provided from the lower to the upper part of the reaction tube 203.

[0039] Thus, in this embodiment, gas is transported via nozzles 249a and 249b, which are positioned within a cylindrical space defined by the inner sidewall of the reaction tube 203 and the ends of the multiple wafers 200 arranged within the reaction tube 203 when viewed from above. Gas is ejected into the reaction tube 203 from gas supply holes 250a and 250b, which open at the nozzles 249a and 249b respectively, starting near the wafers 200. Furthermore, the main gas flow within the reaction tube 203 is set in a direction parallel to the surface of the wafers 200, i.e., a horizontal direction. This structure allows for uniform gas supply to each wafer 200, improving the uniformity of film thickness formed on each wafer 200. The gas flowing on the surface of the wafers 200, i.e., the residual gas after the reaction, flows towards the exhaust port, i.e., the exhaust pipe 231 described later. The flow direction of the residual gas is appropriately determined according to the location of the exhaust port, and is not limited to the vertical direction.

[0040] Raw materials (raw material gas) are supplied into the processing chamber 201 from the gas supply pipe 232a via MFC 241a, valve 243a, and nozzle 249a.

[0041] The reactant (reactant gas) is supplied into the processing chamber 201 from the gas supply pipe 232b via MFC 241b, valve 243b, and nozzle 249b.

[0042] Inert gas is supplied to the processing chamber 201 from gas supply pipes 232c and 232d via MFC 241c and 241d, valves 243c and 243d, and nozzles 249a and 249b, respectively.

[0043] The raw material supply system, primarily composed of gas supply pipe 232a, MFC 241a, and valve 243a, serves as the first gas supply system. The reaction gas supply system, primarily composed of gas supply pipe 232b, MFC 241b, and valve 243b, serves as the second gas supply system. The inert gas supply system, primarily composed of gas supply pipes 232c and 232d, MFC 241c and 241d, and valves 243c and 243d, serves as the second gas supply system. The raw material supply system, reaction gas supply system, and inert gas supply system are collectively referred to as the gas supply system or gas supply unit.

[0044] (Baseboard support)

[0045] like Figure 1As shown, the crystal boat 217, serving as a substrate support, is configured such that multiple wafers 200, for example 25 to 200, are arranged horizontally and aligned with each other at their centers in a vertical direction and supported in multiple layers, i.e., arranged at intervals. The crystal boat 217 is formed, for example, of a heat-resistant material such as quartz or SiC. A heat insulation plate 218, for example, made of a heat-resistant material such as quartz or SiC, is supported in multiple layers at the lower part of the crystal boat 217. This structure makes it difficult for heat from the heater 207 to transfer to the sealing cover 219 side. However, this embodiment is not limited to this method. For example, instead of providing the heat insulation plate 218 at the lower part of the crystal boat 217, a heat insulation cylinder formed of a cylindrical component made of a heat-resistant material such as quartz or SiC may be provided.

[0046] (Plasma Generation Unit)

[0047] Next, use Figures 1 to 5 The plasma generation unit will be explained.

[0048] An electrode 300 for plasma generation is provided outside the reaction tube 203, i.e., outside the processing chamber 201. By applying electricity to the electrode 300, the gas can be plasmaized and excited inside the reaction tube 203, i.e., inside the processing chamber 201, that is, the gas can be excited into a plasma state. Hereinafter, the configuration for exciting the gas into a plasma state is that by simply applying electricity, capacitively coupled plasma (CCP) is generated inside the reaction tube 203, i.e., inside the processing chamber 201.

[0049] Specifically, such as Figure 2 As shown, an electrode 300 and an electrode holder 301 for fixing the electrode 300 are disposed between the heater 207 and the reaction tube 203. The electrode holder 301 is disposed inside the heater 207, the electrode 300 is disposed inside the electrode holder 301, and the reaction tube 203 is disposed inside the electrode 300.

[0050] In addition, such as Figure 1 , Figure 2As shown, the electrode 300 and electrode holder 301, when viewed from above, form an annular space between the inner wall of the heater 207 and the outer wall of the reaction tube 203, extending from the lower part of the outer wall of the reaction tube 203 along its upper part, respectively, in the arrangement direction of the wafer 200. The electrode 300 is arranged parallel to the nozzles 249a and 249b. When viewed from above, the electrode 300 and electrode holder 301 are arranged and configured in a concentric circle with the reaction tube 203 and the heater 207, and are not in contact with the heater 207. The electrode holder 301 is made of an insulating material (i.e., an insulator) and is configured to cover at least a portion of the electrode 300 and the reaction tube 203. Therefore, the electrode holder 301 can also be referred to as a cover (quartz cover, insulating wall, insulating plate) or a cross-sectional arc cover (cross-sectional arc body, cross-sectional arc wall).

[0051] like Figure 2 As shown, multiple electrodes 300 are provided, and these electrodes 300 are fixedly disposed on the inner wall of the electrode fixing member 301. Here, the electrode fixing member 301 and the electrodes 300 can also be referred to as an electrode unit. Figure 2 As shown, the electrode unit is preferably positioned to avoid the nozzles 249a, 249b and the exhaust pipe 231. Figure 2 The image shows an example where two electrode units are located outside the processing chamber 201, avoiding nozzles 249a and 249b and exhaust pipe 231, and are arranged opposite each other, separated by the center of wafer 200 or reaction tube 203. Furthermore, in... Figure 2 The diagram illustrates an example of two electrode units arranged symmetrically about a straight line L when viewed from above. This arrangement allows the nozzles 249a and 249b, the temperature sensor 263, and the exhaust pipe 231 to be positioned outside the plasma generation area within the processing chamber 201. Furthermore, it helps suppress plasma damage to these components, as well as their consumption, breakage, and particle generation.

[0052] A high frequency of, for example, 25 MHz or higher and 35 MHz or lower, more specifically 27.12 MHz, is input to the electrode 300 via a high-frequency power supply 320 and a matching converter 325, thereby generating plasma (active species) 302 within the reaction tube 203. The high-frequency power supply 320 is also referred to as an RF (Radio Frequency) power supply. The plasma generated in this way allows plasma 302 for substrate processing to be supplied from around the wafer 200 to the surface of the wafer 200. Power is supplied from the lower side (lower end) of the electrode 300.

[0053] The plasma generation unit, mainly composed of electrodes 300 (i.e., first electrode 300-1 and second electrode 300-2), excites (activates) the gas into a plasma state. The plasma generation unit is also called a plasma excitation unit or a plasma activation mechanism. The electrode holder 301, matching device 325, and high-frequency power supply 320 can be incorporated into the plasma generation unit.

[0054] Reference Figure 3 of (a) Figure 3 (b) Figure 4 (a) and Figure 4 (b) describes the basic structure of the electrode unit.

[0055] like Figure 3 (a) and Figure 3 As shown in (b), electrode 300 includes a first electrode (first electrode) 300-1 and a second electrode (second electrode) 300-2. The first electrode 300-1 is connected to a high-frequency power supply 320 via a matching connector 325 and is applied with an arbitrary potential. In other words, the first electrode 300-1 is applied with high-frequency power. The second electrode 300-2 is grounded, becoming a reference potential (0V). In other words, the second electrode 300-2 is given a reference potential. The first electrode 300-1 is also referred to as a Hot electrode or HOT electrode, and the second electrode 300-2 is also referred to as a Ground electrode or GND electrode. The first electrode 300-1 and the second electrode 300-2 are respectively configured as main view plate-shaped components. At least one first electrode 300-1 and at least one second electrode 300-2 are provided. Figure 3 (a) and Figure 3 (b) illustrates an example where multiple first electrodes 300-1 and second electrodes 300-2 are respectively provided. Figure 3 (a) illustrates an example with eight first electrodes 300-1 and four second electrodes 300-2. High-frequency power is applied from a high-frequency power source 320 to the first electrodes 300-1 and the second electrodes 300-2 via a matching device 325, thereby generating plasma in the region between the first electrodes 300-1 and the second electrodes 300-2. These regions are also referred to as plasma generation regions. In this disclosure, unless it is necessary to specifically distinguish between the first electrodes 300-1 and the second electrodes 300-2, they will be described as electrodes 300.

[0056] In addition, such as Figure 1 As shown, electrodes 300 are arranged vertically (vertically, in the direction of the mounting substrate) relative to the processing container. Additionally, as... Figure 2 and Figure 3As shown in (b), the electrode 300 is arc-shaped when viewed from above, and the distances (gap) between adjacent electrodes 300 (e.g., between the first electrode 300-1 and the second electrode 300-2) are equal. Furthermore, the electrode 300 is arranged in a generally arc-shaped configuration when viewed from above, along the outer wall of the reaction tube 203, between the reaction tube 203 and the heater 207, for example, fixedly mounted on the inner wall surface of an electrode holder 301 formed in an arc shape with a central angle of 30 degrees or more and 240 degrees or less. Additionally, as described above, the electrode 300 is arranged parallel to the nozzles 249a and 249b.

[0057] Electrodes 300 (first electrode 300-1, second electrode 300-2) are made of oxidation-resistant materials such as nickel (Ni). Electrodes 300 may also be made of metals such as SUS, aluminum (Al), or copper (Cu), but by using oxidation-resistant materials such as Ni, conductivity degradation can be suppressed, thus preventing a decrease in plasma generation efficiency. Furthermore, electrodes 300 may also be made of a Ni alloy with added Al. In this case, an aluminum oxide film (AlO film) with high heat resistance and corrosion resistance can be formed on the outermost surface of the electrode 300. The AlO film formed on the outermost surface of the electrode 300 acts as a protective film (barrier film, barrier film), suppressing the deterioration development inside the electrode 300. This further suppresses the decrease in plasma generation efficiency caused by a decrease in the conductivity of the electrode 300. Electrode holder 301 is made of an insulating material (insulator), such as a heat-resistant material like quartz or SiC. The material of electrode holder 301 is preferably the same as that of the reaction tube 203.

[0058] The electrode 300 is preferably constructed with a thickness of 0.1 mm or more and 1 mm or less, and a width of 5 mm or more and 30 mm or less, in order to have sufficient strength and not significantly reduce the efficiency of wafer heating by the heat source. Furthermore, it preferably has a bending structure that serves as a deformation suppression part to prevent deformation caused by heating by the heater 207. Since the electrode 300 is positioned between the reaction tube 203 and the heater 207, a bending angle of 90° to 175° is appropriate due to space constraints. A thermally oxidized coating is formed on the electrode surface; due to thermal stress, this coating may sometimes peel off, resulting in particles; therefore, excessive bending must be avoided.

[0059] like Figure 4 (a) and Figure 4As shown in (b), a protrusion (hook) 310 for hooking the electrode 300 is provided on the inner wall surface of the electrode holder 301, and a through hole, i.e., an opening 305, is provided on the electrode 300 for the protrusion 310 to be inserted through. The opening 305 is composed of a circular cutout 303 for the protrusion head 311 to pass through and a sliding cutout 304 for the protrusion shaft 312 to slide. By hooking the electrode 300 through the opening 305 on the protrusion 310 provided on the inner wall surface of the electrode holder 301, the electrode 300 can be fixed to the electrode holder 301. Furthermore, in Figure 3 (a) illustrates an example in which two openings 305 are provided for an electrode 300, and the electrode 300 is fixed by hooking two protrusions 310, that is, it illustrates an example of fixing an electrode in two places.

[0060] Multiple electrodes 300 are fixed to the inner wall of a curved electrode fixing clamp, i.e., an electrode fixing member 301, and are modularly arranged (hook-type electrode unit) on the outer periphery of the reaction tube 203 in a manner that is integral with the electrode fixing member 301. Quartz is used as the material for the electrode fixing member 301. To separate the electrode fixing member 301 or the reaction tube 203 from the electrodes 300 by a certain distance, spacers, springs, or other elastic bodies can be provided between them. Alternatively, these can have a structure that is integral with the electrode fixing member 301 or the electrodes 300. In this embodiment, [the following is an example of a specific embodiment] has... Figure 4 The spacer 330, as shown in (b), is integrally formed with the electrode holder 301. Having multiple spacers 330 for a single electrode is effective in maintaining a constant distance between them. Alternatively, the spacer 330 may be included within the aforementioned electrode unit.

[0061] The electrode holder 301 is preferably configured with a thickness of 1 mm or more but less than 5 mm to provide sufficient strength without significantly reducing the efficiency of wafer heating performed by the heater 207. If the thickness of the electrode holder 301 is less than 1 mm, the required strength to cope with the weight of the electrode holder 301 or temperature changes cannot be obtained. Furthermore, if it is configured to be thicker than 5 mm, it will absorb the heat energy emitted from the heater 207, thus making it impossible to properly perform heat treatment on the wafer 200.

[0062] Here, the furnace pressure during substrate processing is preferably controlled within a range of 10 Pa or higher and 300 Pa or lower. This is because when the furnace pressure is lower than 10 Pa, the mean free path of gas molecules becomes longer than the Debye length of plasma, resulting in significant direct bombardment of the furnace wall by the plasma, making it difficult to suppress particle generation. Furthermore, when the furnace pressure is higher than 300 Pa, the plasma generation efficiency saturates; therefore, even with the supply of reactive gas, the plasma generation rate remains unchanged, leading to unnecessary consumption of reactive gas. Additionally, the shorter mean free path of gas molecules results in a decrease in the efficiency of plasma-active species transport to the wafer.

[0063] To achieve high substrate processing capability at substrate temperatures below 500°C, it is preferable to set the occupancy of the electrode holder 301 to a roughly arc-shaped configuration with a central angle of 30° or more and 240° or less. Furthermore, to avoid particle generation, it is preferable to avoid the placement of exhaust pipes 231, nozzles 249a, 249b, etc., which serve as exhaust ports. That is, the electrode holder 301 is disposed on the outer periphery of the reaction tube 203, excluding the locations where nozzles 249a, 249b and exhaust pipe 231 are provided. Nozzles 249a, 249b are gas supply sections located within the reaction tube 203, and exhaust pipe 231 is a gas exhaust section. In this embodiment, two electrode holders 301 with a central angle of 110° are symmetrically arranged on both sides.

[0064] use Figure 5 right Figure 2 Specific examples of the electrodes used in the two electrode units shown will be explained.

[0065] In the first and second electrode units (first unit and second unit) 31 and 32, six sets of electrode sections are respectively arranged, each consisting of two first electrodes (first electrodes) 300-1 and one second electrode (second electrode) 300-2. Figure 5 Six groups of first to sixth electrode sections (first to sixth electrode sections) 300a to 300f are arranged sequentially from the left side. The electrode sections 300a to 300f of electrode unit 31 are also referred to as the first electrode group, and the electrode sections 300a to 300f of electrode unit 32 are referred to as the second electrode group. First electrodes 300-1 are arranged consecutively. Furthermore, first electrodes 300-1, first electrodes 300-1, and second electrodes 300-2 are arranged sequentially. The number of first electrodes 300-1 is not limited to two; multiple first electrodes 300-1 are acceptable. In this case, one second electrode 300-2 is provided relative to the multiple first electrodes 300-1. The number of second electrodes 300-2 is not limited to one and differs from the number of first electrodes 300-1.

[0066] In electrode unit 31, the upper ends (height) of the first electrode 300-1 and the second electrode 300-2 of each of the electrode portions 300a to 300f are at the same position, extending from a position (H7) slightly below the lower end of the substrate holding region SHA to a portion of the substrate holding region SHA. In other words, the lengths of the first electrode 300-1 and the second electrode 300-2 of each of the electrode portions 300a to 300f are the same. The height decreases in the order of the electrode portions 300a to 300f. Furthermore, the lengths of the first electrode and the second electrode need only be substantially the same.

[0067] Here, the substrate holding region SHA refers to the region in the wafer 200 held within the wafer boat 217. Furthermore, wafer 200 refers to at least one of a product wafer, a dummy wafer, or a filler dummy wafer. The substrate holding region SHA is divided into six regions WH1 to WH6 along its height direction, with the positions (heights) of their boundaries sequentially designated as H1, H2, H3, H4, and H5 from top to bottom. For example, regions WH2 to WH5 have approximately the same width, region WH1 is narrower than region WH2, and region WH6 is narrower than region WH1. Dummy wafers are placed in the upper part or all of region WH1, and in the lower part or all of region WH6. The substrate processing area is narrower than the substrate holding region SHA. The upper position (height) of the substrate holding region SHA is designated as H0, and the lower position (height) is designated as H6.

[0068] The upper height of the first electrode 300-1 and the second electrode 300-2 of the first electrode portion 300a of electrode unit 31 is H1, which is lower than the height H0 of the front ends of the first electrode 300-1 and the second electrode 300-2 of electrode unit 32. The upper height of the first electrode 300-1 and the second electrode 300-2 of the second electrode portion 300b of electrode unit 31 is lower than H1 and higher than H2. The upper height of the first electrode 300-1 and the second electrode 300-2 of the third electrode portion 300c of electrode unit 31 is lower than H2 and higher than H3.

[0069] In other words, the lengths of the first electrode 300-1 and the second electrode 300-2 of the first electrode section 300a are longer than the lengths of the first electrode 300-1 and the second electrode 300-2 of the second electrode section 300b. The lengths of the first electrode 300-1 and the second electrode 300-2 of the second electrode section 300b are shorter than the lengths of the first electrode 300-1 and the second electrode 300-2 of the first electrode section 300a. Furthermore, the lengths of the first electrode 300-1 and the second electrode 300-2 of the second electrode section 300b are longer than the lengths of the first electrode 300-1 and the second electrode 300-2 of the third electrode section 300c. The lengths of the first electrode 300-1 and the second electrode 300-2 of the third electrode section 300c are shorter than the lengths of the first electrode 300-1 and the second electrode 300-2 of the first electrode section 300a. Furthermore, the lengths of the first electrode 300-1 and the second electrode 300-2 in the third electrode section 300c are shorter than the lengths of the first electrode 300-1 and the second electrode 300-2 in the second electrode section 300b. The lengths of the first electrode 300-1 and the second electrode 300-2 in the first electrode section 300a of the electrode unit 31 are shorter than the lengths of the first electrode 300-1 and the second electrode 300-2 in the electrode unit 32.

[0070] The upper ends of the first electrode 300-1 and the second electrode 300-2 of the fourth electrode section 300d of electrode unit 31 are at a height of H3. The upper ends of the first electrode 300-1 and the second electrode 300-2 of the fifth electrode section 300e of electrode unit 31 are at a height lower than H3 and higher than H4. The upper ends of the first electrode 300-1 and the second electrode 300-2 of the sixth electrode section 300f of electrode unit 31 are at a height of H4.

[0071] In electrode unit 32, the upper ends (heights) of the first electrode 300-1 and the second electrode 300-2 of each of electrode portions 300a to 300f are the same. Furthermore, the first electrode 300-1 and the second electrode 300-2 of each of electrode portions 300a to 300f extend from a position (H7) slightly below the lower end of the substrate holding region SHA to the upper end (H0) of the substrate holding region SHA. In other words, the lengths of the first electrode 300-1 and the second electrode 300-2 of each of electrode portions 300a to 300f are the same.

[0072] For example, the widths of the first electrode 300-1 and the second electrode 300-2 are 12.5 mm. The gaps between the first electrodes 300-1 and between the first electrodes 300-1 and the second electrode 300-2 are all set to 7.5 mm.

[0073] (Exhaust section)

[0074] like Figure 1 As shown, an exhaust pipe 231 for venting the atmosphere inside the processing chamber 201 is provided in the reaction tube 203. The exhaust pipe 231 is connected to a vacuum pump 246, which serves as a vacuum venting device, via a pressure sensor 245 (a pressure detector) that detects the pressure inside the processing chamber 201 and an APC (Auto Pressure Controller) valve 244 (an exhaust valve). The pressure detector is also called a pressure detection unit, and the exhaust valve is also called a pressure adjustment unit. The APC valve 244 is a valve that can perform vacuum venting and stop vacuum venting inside the processing chamber 201 by opening and closing the valve while the vacuum pump 246 is operating. The APC valve 244 is also configured to adjust the pressure inside the processing chamber 201 by adjusting the valve opening based on the pressure information detected by the pressure sensor 245 while the vacuum pump 246 is operating. The exhaust system mainly consists of the exhaust pipe 231, the APC valve 244, and the pressure sensor 245. It is also possible to include the vacuum pump 246 in the exhaust system. The exhaust pipe 231 is not limited to being installed in the reaction pipe 203, but can also be installed in the manifold 209 in the same way as the nozzles 249a and 249b.

[0075] (Peripheral devices)

[0076] A sealing cap 219, serving as a furnace opening cover, is provided below the manifold 209 to airtightly seal the lower opening of the manifold 209. The sealing cap 219 is configured to abut against the lower end of the manifold 209 from the lower side in the vertical direction. The sealing cap 219 is formed of a metal such as SUS and is shaped like a disc. An O-ring 220b, serving as a sealing member, is provided on the upper surface of the sealing cap 219 and abuts against the lower end of the manifold 209.

[0077] A rotation mechanism 267 for rotating the crystal boat 217 is provided on the side of the sealing cover 219 opposite to the processing chamber 201. The rotation shaft 255 of the rotation mechanism 267 passes through the sealing cover 219 and is connected to the crystal boat 217. The rotation mechanism 267 is configured to rotate the wafer 200 by rotating the crystal boat 217. The sealing cover 219 is configured to move vertically up and down via a crystal boat lift 115, which is vertically provided outside the reaction tube 203 and serves as a lifting mechanism. The crystal boat lift 115 is configured to move the crystal boat 217 in and out of the processing chamber 201 by moving the sealing cover 219 up and down.

[0078] The crystal boat lift 115 is configured as a conveying device for transporting the crystal boat 217, i.e., the wafer 200, to and from the processing chamber 201. The conveying device is also called a conveying mechanism. Additionally, a gate 219s, serving as a furnace opening cover, is provided below the manifold 209, capable of airtightly sealing the lower opening of the manifold 209 during the descent of the sealing cover 219 via the crystal boat lift 115. The gate 219s is made of, for example, a metal such as SUS, and is formed in a disc shape. An O-ring 220c, serving as a sealing member, is provided on the upper surface of the gate 219s, abutting against the lower end of the manifold 209. The opening and closing actions of the gate 219s (e.g., lifting, rotating, etc.) are controlled by the gate opening and closing mechanism 115s.

[0079] A temperature sensor 263, serving as a temperature detector, is installed inside the reaction tube 203. The energizing of the heater 207 is adjusted based on the temperature information detected by the temperature sensor 263, thereby achieving the desired temperature distribution within the processing chamber 201. The temperature sensor 263, like the nozzles 249a and 249b, is installed along the inner wall of the reaction tube 203.

[0080] (Control device)

[0081] Next, use Figure 6 The control device should be described. For example... Figure 6 As shown, the controller 121, serving as a control unit (control device), is configured as a computer having a CPU (Central Processing Unit) 121a, RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. The RAM 121b, storage device 121c, and I / O port 121d are configured to exchange data with the CPU 121a via an internal bus 121e. An input / output device 122, such as a touch panel, is connected to the controller 121.

[0082] The storage device 121c is configured such as flash memory, HDD (Hard Disk Drive), SSD (Solid State Drive), etc. The storage device 121c stores, in a readable manner, control programs that control the operation of the substrate processing apparatus, and process procedures that describe the film deposition process or conditions, etc. The process procedure is a combination of processes that allow the substrate processing apparatus to perform various processes (e.g., film deposition processes) described later, using the controller 121 to obtain a predetermined result, and functions as a program. Hereinafter, process procedures or control programs will be collectively referred to as programs. Furthermore, process procedures will be simply referred to as processes. When the term "program" is used in this specification, it may include only a process unit, only a control program unit, or both. RAM 121b is configured as a storage area (working area) that temporarily holds programs or data read by the CPU 121a.

[0083] I / O port 121d is connected to the aforementioned MFC241a~241d, valves 243a~243d, pressure sensor 245, APC valve 244, vacuum pump 246, heater 207, temperature sensor 263, rotating mechanism 267, crystal boat elevator 115, gate opening and closing mechanism 115s, and high-frequency power supply 320.

[0084] CPU 121a is configured to read and execute a control program from storage device 121c, and to read the process from storage device 121c based on input commands from input / output device 122. CPU 121a is configured to control the following actions according to the read process content: control of rotary mechanism 267; flow rate adjustment of various gases performed by MFCs 241a-241d; opening and closing of valves 243a-243d; opening and closing of APC valve 244 and pressure adjustment of APC valve 244 based on pressure sensor 245; and starting and stopping of vacuum pump 246. CPU121a is also configured to control the following actions according to the read process information: temperature adjustment of heater 207 based on temperature sensor 263; forward and reverse rotation, rotation angle and rotation speed adjustment of crystal boat 217 by rotating mechanism 267; lifting and lowering of crystal boat 217 by crystal boat elevator 115; opening and closing of gate 219s by gate opening and closing mechanism 115s; and power supply of high frequency power supply 320, etc.

[0085] The controller 121 is configured to install the aforementioned program stored in the external storage device 123 onto a computer. The external storage device may be a semiconductor memory such as a hard disk, a CD, an MO disk, or a USB flash drive. Storage device 121c and external storage device 123 constitute a computer-readable storage medium. Hereinafter, they will also be collectively referred to as storage media. When the term "storage medium" is used in this specification, there may be cases where only storage device 121c is included, cases where only external storage device 123 is included, or cases where both are included. Furthermore, the program may be provided to the computer using a communication unit such as the Internet or a dedicated line, without using external storage device 123.

[0086] (2) Substrate processing process

[0087] As a step in the manufacturing process of a semiconductor device, this example describes a process for forming a film on a substrate using the aforementioned substrate processing apparatus. Figure 7 The following description explains that the controller 121 controls the operation of each component constituting the substrate processing apparatus.

[0088] In this specification, for convenience, it is sometimes indicated as follows. Figure 7 The sequence of film-forming processes is shown. The same terminology is used in the following descriptions of variations or other embodiments.

[0089] (Raw material gas → Reactant gas) × n

[0090] When the term "wafer" is used in this specification, it can refer to the wafer itself or to a laminate of the wafer and specified layers, films, etc., formed on its surface. When the term "surface of a wafer" is used in this specification, it can refer to the surface of the wafer itself or to the surface of specified layers, films, etc., formed on the wafer. The use of the term "substrate" in this specification has the same meaning as the use of the term "wafer."

[0091] (Moving in step: S1)

[0092] When multiple wafers 200 are loaded (wafer loading) into the crystal boat 217, the gate 219s is moved by the gate opening and closing mechanism 115s, opening the lower end of the manifold 209 (gate opening). Afterwards, as... Figure 1 As shown, a crystal boat 217 supporting multiple wafers 200 is lifted by a crystal boat elevator 115 and moved into the processing chamber 201 (crystal boat loading). In this state, the sealing cap 219 seals the lower end of the manifold 209 via the O-ring 220b.

[0093] (Pressure / temperature adjustment procedure: S2)

[0094] Vacuum pump 246 performs vacuum venting (pressure reduction venting) to bring the interior of processing chamber 201 to the desired pressure (vacuum level). At this time, the pressure inside processing chamber 201 is measured by pressure sensor 245, and the APC valve 244 is controlled by feedback (pressure adjustment) based on the measured pressure information. Vacuum pump 246 remains in continuous operation at least until the film formation step described later is completed.

[0095] Furthermore, heating is performed by heater 207 to bring the processing chamber 201 to the desired temperature. At this time, the energization of heater 207 is adjusted based on temperature information detected by temperature sensor 263 to achieve the desired temperature distribution within the processing chamber 201. Heating of the processing chamber 201 by heater 207 continues at least until the film formation step described later is completed. However, when performing the film formation step at temperatures below room temperature, heating of the processing chamber 201 by heater 207 may not be necessary. Furthermore, when processing is performed only at such temperatures, heater 207 may not be required, and the heater 207 may not be included in the substrate processing apparatus. This simplifies the structure of the substrate processing apparatus.

[0096] Next, the rotation of the crystal boat 217 and the wafer 200 by the rotation mechanism 267 begins. The rotation of the crystal boat 217 and the wafer 200 by the rotation mechanism 267 continues at least until the film deposition step described later is completed.

[0097] (Film-forming steps: S3, S4, S5, S6)

[0098] Then, the film-forming step is performed by sequentially executing steps S3, S4, S5, and S6.

[0099] (Raw gas supply steps: S3, S4)

[0100] In step S3, raw material gas is supplied to the wafer 200 in the processing chamber 201.

[0101] Open valve 243a to allow the raw material gas to flow into gas supply pipe 232a. The flow rate of the raw material gas is adjusted by MFC 241a and supplied into processing chamber 201 through nozzle 249a from gas supply port 250a, and exhausted from exhaust pipe 231. At this time, raw material gas is supplied to wafer 200. At the same time, valve 243c can be opened to allow inert gas to flow into gas supply pipe 232c. The flow rate of the inert gas is adjusted by MFC 241c and supplied into processing chamber 201 together with the raw material gas, and exhausted from exhaust pipe 231.

[0102] In addition, to prevent the raw material gas from entering the nozzle 249b, the valve 243d can be opened to allow the inert gas to flow into the gas supply pipe 232d. The inert gas is supplied into the processing chamber 201 through the gas supply pipe 232d and the nozzle 249b, and is exhausted from the exhaust pipe 231.

[0103] As an example of the processing conditions in this step,

[0104] Processing temperature: room temperature (25℃) ~ 550℃, preferably 400~500℃

[0105] Processing pressure: 1~4000Pa, preferably 100~1000Pa

[0106] Raw material gas supply flow rate: 0.1~3 slm

[0107] Raw material gas supply time: 1~100 seconds, preferably 1~50 seconds

[0108] Inert gas supply flow rate (per gas supply pipe): 0~10slm.

[0109] Furthermore, the numerical range stated as "25~550℃" in this specification means that both the lower and upper limits are included within the range. Therefore, for example, "25~550℃" means "above 25℃ and below 550℃". The same applies to other numerical ranges. Additionally, the processing temperature in this specification refers to the temperature of the wafer 200 or the temperature inside the processing chamber 201, and the processing pressure refers to the pressure inside the processing chamber 201. Furthermore, the gas supply flow rate: 0slm means that the gas is not supplied. These also apply in the following descriptions. When the supply flow rate includes 0slm, 0slm means that the substance (gas) is not supplied. This also applies in the following descriptions.

[0110] By supplying a raw material gas to the wafer 200 under the above conditions, a first layer is formed on the substrate film on the surface of the wafer 200. For example, when using a silicon-containing (Si) gas as the raw material gas (described later), a Si-containing layer is formed as the first layer.

[0111] After the first layer is formed, valve 243a is closed to stop the supply of raw material gas to the processing chamber 201. At this time, APC valve 244 remains open, and vacuum pump 246 is used to ventilate the processing chamber 201, removing any unreacted raw material gas or reaction byproducts that may have contributed to the formation of the first layer from the processing chamber 201 (S4). Additionally, valves 243c and 243d are opened to supply inert gas to the processing chamber 201. The inert gas serves as a purging gas.

[0112] Alternatively, as raw materials, chlorosilane gases such as monochlorosilane (SiH3Cl), dichlorosilane (SiH2Cl2), trichlorosilane (SiHCl3), tetrachlorosilane (SiCl4), hexachlorosilane (Si2Cl6), and octachloropropane (Si3Cl8) can also be used; fluorosilane gases such as tetrafluorosilane (SiF4) and difluorosilane (SiH2F2); bromosilane gases such as tetrabromosilane (SiBr4) and dibromosilane (SiH2Br2); and iodosilane gases such as tetraiodosilane (SiI4) and diiodosilane (SiH2I2) can also be used. That is, halosilane gases can be used as raw material gases. One or more of these can be used as raw material gases.

[0113] As inert gases, rare gases such as nitrogen (N2), argon (Ar), helium (He), neon (Ne), and xenon (Xe) can be used. This also applies to the steps described later.

[0114] (Reaction gas supply steps: S5, S6)

[0115] After the film formation process is completed, the plasma-excited reaction gas (S5) is supplied to the wafer 200 in the processing chamber 201.

[0116] In this step, the opening and closing of valves 243b to 243d are controlled using the same process as the opening and closing control of valves 243a, 243c, and 243d in step S3. The reaction gas, with its flow rate adjusted by MFC 241b, is supplied into the processing chamber 201 via nozzle 249b from the gas supply port 250b. At this time, high-frequency power (RF power, in this embodiment, a frequency of 27.12 MHz) is supplied (applied) to the electrode 300 from the high-frequency power supply 320. The reaction gas supplied into the processing chamber 201 is excited into a plasma state inside the processing chamber 201, supplied to the wafer 200 as an active species, and exhausted from the exhaust pipe 231.

[0117] As an example of the processing conditions in this step,

[0118] Processing temperature: room temperature (25℃) ~ 550℃, preferably 400~500℃

[0119] Processing pressure: 1~300Pa, preferably 10~100Pa

[0120] Reactant gas supply flow rate: 0.1~10 slm

[0121] Reaction gas supply time: 1~100 seconds, preferably 1~50 seconds

[0122] Inert gas supply flow rate (per gas supply pipe): 0~10 slm

[0123] RF power: 50~1000W

[0124] RF frequency: 27.12MHz.

[0125] Under the above conditions, by exciting the reactive gas into a plasma state and supplying it to the wafer 200, ions and electrically neutral active species are generated in the plasma. Through the action of these active species, the first layer formed on the surface of the wafer 200 is modified, thereby transforming the first layer into the second layer.

[0126] As the reactant gas, for example, an oxidizing gas (oxidant) such as oxygen (O) gas is used. In this case, by exciting the O-containing gas into a plasma state, O-containing active species are generated, which are then supplied to the wafer 200. In this case, the first layer formed on the surface of the wafer 200 is oxidized as a modification treatment by the action of the O-containing active species. In this case, if the first layer is, for example, a Si-containing layer, the Si-containing layer as the first layer is modified into a silicon oxide layer (SiO layer) as the second layer.

[0127] Alternatively, as the reactant gas, a nitriding gas (nitriding agent) such as nitrogen (N) and hydrogen (H) gas is used. In this case, by exciting the N and H gas into a plasma state, N and H active species are generated. These N and H active species are supplied to the wafer 200. At this time, the first layer formed on the surface of the wafer 200 is nitrided as a modification treatment by the action of the N and H active species. In this case, if the first layer is, for example, a Si-containing layer, the Si-containing layer as the first layer is modified into a silicon nitride layer (SiN layer) as the second layer.

[0128] After modifying the first layer into the second layer, valve 243b is closed to stop the supply of reaction gas. Additionally, the supply of high-frequency power to electrode 300 is stopped. Then, through the same processing steps and conditions as in step S4, the reaction gas and reaction byproducts remaining in processing chamber 201 are removed from processing chamber 201 (S6).

[0129] As described above, gases containing O, N, and H can be used as reactant gases. Examples of O-containing gases include oxygen (O2), nitrous oxide (N2O), nitric oxide (NO), nitrogen dioxide (NO2), ozone (O3), hydrogen peroxide (H2O2), water vapor (H2O), ammonium hydroxide (NH4(OH)), carbon monoxide (CO), and carbon dioxide (CO2). Examples of N and H-containing gases include ammonia (NH3), diazepines (N2H2), hydrazine (N2H4), and N3H8, which are hydrogen nitride-based gases. One or more of these gases can be used as reactant gases.

[0130] As an inert gas, various gases, such as those exemplified in step S4, can be used.

[0131] (Number of times the regulations are implemented: S7)

[0132] Steps S3, S4, S5, and S6 described above are performed asynchronously in this order, constituting one cycle. Then, by performing this cycle a predetermined number of times (n times, where n is an integer greater than or equal to 1), i.e., more than once, a film with a predetermined composition and thickness can be formed on wafer 200. It is preferable to repeat this cycle multiple times. That is, it is preferable to make the thickness of the first layer formed in each cycle smaller than the desired film thickness, and repeat the above cycle multiple times until the film thickness formed by stacking the second layer reaches the desired film thickness. Furthermore, in the case of forming, for example, a Si-containing layer as the first layer and forming, for example, a SiO layer as the second layer, a silicon oxide film (SiO film) is formed as the film. Additionally, in the case of forming, for example, a Si-containing layer as the first layer and forming, for example, a SiN layer as the second layer, a silicon nitride film (SiN film) is formed as the film.

[0133] (Atmospheric pressure recovery step: S8)

[0134] After the above film-forming process is completed, inert gas is supplied into the processing chamber 201 through gas supply pipes 232c and 232d, and exhaust gas is discharged through exhaust pipe 231. Thus, the processing chamber 201 is purged with inert gas, and any remaining reaction gases or other contaminants are removed (inert gas purging). Afterwards, the atmosphere in the processing chamber 201 is replaced with inert gas (inert gas replacement), and the pressure inside the processing chamber 201 is restored to atmospheric pressure (atmospheric pressure restoration: S8).

[0135] (Moving out step: S9)

[0136] Next, the sealing cover 219 is lowered by the crystal boat lift 115, opening the lower end of the manifold 209. Then, the processed wafer 200, supported on the crystal boat 217, is moved from the lower end of the manifold 209 to the outside of the reaction tube 203 (crystal boat unloading). After the crystal boat is unloaded, the gate 219s is moved, and the lower end opening of the manifold 209 is sealed by the gate 219s via the O-ring 220c (gate closing). After being moved to the outside of the reaction tube 203, the processed wafer 200 is removed from the crystal boat 217 (wafer unloading). Furthermore, after wafer unloading, an empty crystal boat 217 can be moved into the processing chamber 201.

[0137] (3) Effects of this implementation method

[0138] The electric field near the upper end of electrode 300 is stronger than that at other locations on electrode 300, resulting in an electric field distribution biased in the longitudinal direction of electrode 300. This biased electric field distribution affects the density distribution of plasma 302, which also exhibits a bias. Therefore, in the film thickness and film quality, which are related to the density distribution of plasma 302, non-uniformity sometimes occurs between wafers 200. This problem can be solved by making the electrode length sufficiently longer than the upper end of the substrate holding region SHA. However, by extending the electrode length, electrode losses increase, or the longitudinal direction of the processing furnace 202 becomes larger.

[0139] In this embodiment, the lengths of the first electrode 300-1 and the second electrode 300-2 of each of the plurality of electrode portions are matched. An electrode unit 31 is constructed from a plurality of electrode portions of different lengths. The height (i.e., length) of the upper ends of the first electrode 300-1 and the second electrode 300-2 is adjusted so that the areas with strong electric fields, i.e., the electrode ends, are distributed dispersed within the substrate holding processing area. This structure improves the deviation of the electric field distribution, and the electric field generated between the inner wall of the reaction tube 203 near the electrode 300 and the wafer 200 is uniformly and strongly distributed in the longitudinal direction (i.e., the direction in which the substrate is mounted). As a result, the plasma 302 has a high density and is uniformly distributed in the longitudinal direction, improving the uniformity of film thickness and film quality between the wafers 200.

[0140] (Variation Example 1)

[0141] use Figure 8 The electrodes used in electrode units 31 and 32 in Modification 1 of the Embodiment will be described. In Modification 1, the electrode arrangement and electrode length of the electrode section differ from those in the Embodiment. The other structures of Modification 1 are the same as in the Embodiment. In Modification 1, the same effects as in the Embodiment described above can also be obtained.

[0142] Nine electrode sections, each consisting of a first electrode 300-1 and a second electrode 300-2, are respectively arranged in electrode units 31 and 32. The nine sets of first to ninth electrode sections 300a~300i... Figure 8 The electrodes are arranged sequentially on the left side. Furthermore, the first electrode 300-1 and the second electrode 300-2 are arranged alternately. There is no limitation to one of each of the first electrode 300-1 and the second electrode 300-2, as long as the number is equal.

[0143] In electrode unit 31, the upper ends (heights) of the first electrode 300-1 and the second electrode 300-2 of each of the electrode portions 300a to 300i are at the same position. The first electrode 300-1 and the second electrode 300-2 of each of the electrode portions 300a to 300i extend from a position (H7) slightly below the lower end of the substrate holding region SHA to a portion of the substrate holding region SHA. In other words, the lengths of the first electrode 300-1 and the second electrode 300-2 of each of the electrode portions 300a to 300i are the same. The height decreases sequentially according to the electrode portions 300a to 300i.

[0144] The upper height of the first electrode 300-1 and the second electrode 300-2 of the first electrode portion 300a of electrode unit 31 is H1, which is lower than the height H0 of the front ends of the first electrode 300-1 and the second electrode 300-2 of electrode unit 32. The upper height of the first electrode 300-1 and the second electrode 300-2 of the second electrode portion 300b of electrode unit 31 is lower than H1 and higher than H2. The upper height of the first electrode 300-1 and the second electrode 300-2 of the third electrode portion 300c of electrode unit 31 is lower than the height of the second electrode portion 300b and higher than H2.

[0145] The upper height of the first electrode 300-1 and the second electrode 300-2 of the fourth electrode section 300d of electrode unit 31 is the height of H2. The upper height of the first electrode 300-1 and the second electrode 300-2 of the fifth electrode section 300e of electrode unit 31 is lower than the height of H2 and higher than the height of H3. The upper height of the first electrode 300-1 and the second electrode 300-2 of the sixth electrode section 300f of electrode unit 31 is lower than the height of the fifth electrode section 300e and higher than the height of H3.

[0146] The upper height of the first electrode 300-1 and the second electrode 300-2 of the seventh electrode section 300g of electrode unit 31 is H3. The upper height of the first electrode 300-1 and the second electrode 300-2 of the eighth electrode section 300h of electrode unit 31 is lower than H3 and higher than H4. The upper height of the first electrode 300-1 and the second electrode 300-2 of the ninth electrode section 300i of electrode unit 31 is H4.

[0147] In electrode unit 32, the upper ends (heights) of the first electrode 300-1 and the second electrode 300-2 of each of electrode portions 300a to 300i are the same. The first electrode 300-1 and the second electrode 300-2 of each of electrode portions 300a to 300i extend from a position (H7) slightly below the lower end of the substrate holding region SHA to the upper end (H0) of the substrate holding region SHA. In other words, the lengths of the first electrode 300-1 and the second electrode 300-2 of each of electrode portions 300a to 300i are the same.

[0148] (Variation Example 2)

[0149] use Figure 9 The electrodes used in electrode units 31 and 32 in Modification 2 of the Embodiment will be described. In Modification 2, the electrode length of the electrode portion differs from that in the Embodiment. The other structures of Modification 2 are the same as in the Embodiment. In Modification 2, the same effects as in the Embodiment described above can also be obtained.

[0150] The upper height of the first electrode 300-1 and the second electrode 300-2 of the first electrode portion 300a of electrode unit 31 is lower than the front end height of the first electrode 300-1 and the second electrode 300-2 of the first electrode portion 300a of electrode unit 32, but higher than the height of H2. The upper height of the first electrode 300-1 and the second electrode 300-2 of the second electrode portion 300b of electrode unit 31 is lower than the height of H2, but higher than the height of H3. The upper height of the first electrode 300-1 and the second electrode 300-2 of the third electrode portion 300c of electrode unit 31 is the height of H3.

[0151] The upper height of the first electrode 300-1 and the second electrode 300-2 of the fourth electrode section 300d of electrode unit 31 is lower than the height of H3 and higher than the height of H4. The upper height of the first electrode 300-1 and the second electrode 300-2 of the fifth electrode section 300e of electrode unit 31 is lower than the height of H4 and higher than the height of H5. The upper height of the first electrode 300-1 and the second electrode 300-2 of the sixth electrode section 300f of electrode unit 31 is lower than the height of the fifth electrode section 300e and higher than the height of H5.

[0152] In electrode unit 32, the upper ends (heights) of the first electrode 300-1 and the second electrode 300-2 of each of electrode portions 300a to 300f are at the same position. Electrode portions 300a and 300b extend from a position slightly below the lower end of the substrate holding region SHA (H7) to the middle of region WH2 (between H1 and H2). Electrode portions 300c to 300f extend from a position slightly below the lower end of the substrate holding region SHA (H7) to the upper end of the substrate holding region SHA (H0). In other words, the lengths of the first electrode 300-1 and the second electrode 300-2 of each of electrode portions 300a and 300b are different from the lengths of the first electrode 300-1 and the second electrode 300-2 of each of electrode portions 300c to 300f. The lengths of the first electrode 300-1 and the second electrode 300-2 of the first electrode portion 300a of the electrode unit 31 are shorter than the lengths of the first electrode 300-1 and the second electrode 300-2 of the electrode portions 300a and 300c of the electrode unit 32.

[0153] (Variation Example 3)

[0154] use Figure 10 The electrodes used in electrode units 31 and 32 in Modification 3 of the Embodiment will be described. In Modification 3, the electrode length of the electrode portion differs from that in the Embodiment, and a conductor is provided in the portion of electrode unit 31 where there is no electrode. The other structures of Modification 3 are the same as in the Embodiment. In Modification 3, the same effects as in the Embodiment described above can also be obtained.

[0155] The upper height of the first electrode 300-1 and the second electrode 300-2 of the first electrode portion 300a and the second electrode portion 300b of the electrode unit 31 is lower than H1 and higher than H2. The upper height of the first electrode 300-1 and the second electrode 300-2 of the third electrode portion 300c and the fourth electrode portion 300d of the electrode unit 31 is the height of H2.

[0156] The upper height of the first electrode 300-1 and the second electrode 300-2 of the fifth electrode section 300e of electrode unit 31 is lower than the height of H2 and higher than the height of H3. The upper height of the first electrode 300-1 and the second electrode 300-2 of the sixth electrode section 300f of electrode unit 31 is the height of H3. The upper height of the first electrode 300-1 and the second electrode 300-2 of the seventh electrode section 300g of electrode unit 31 is lower than the height of H3 and higher than the height of H4. The upper height of the first electrode 300-1 and the second electrode 300-2 of the eighth electrode section 300h of electrode unit 31 is lower than the height of the first electrode 300-1 and the second electrode 300-2 of the seventh electrode section 300g, but higher than the height of H4. The upper height of the first electrode 300-1 and the second electrode 300-2 of the ninth electrode section 300i of electrode unit 31 is the height of H4.

[0157] Electrode unit 31 is configured such that the upper portions of the first electrode 300-1 and the second electrode 300-2 are removed from the electrode portions 300a to 300i of electrode unit 32. In the portion where the upper portions of the first electrode 300-1 and the second electrode 300-2 are removed (i.e., in the space where the electrodes are removed), a conductor 340 connected to a reference potential (e.g., ground) is provided at a distance from the first electrode 300-1 and the second electrode 300-2 from which discharge does not occur. This reduces the influence of unstable electromagnetic fields in the space where the electrodes are removed.

[0158] The embodiments of this disclosure have been described in detail above. However, this disclosure is not limited to the above embodiments, and various modifications can be made without departing from its core essence.

[0159] Furthermore, in the above embodiment, an example of supplying the reactant after supplying the raw materials was described. The present invention is not limited to this method; the supply order of the raw materials and reactant can also be reversed. That is, the raw materials can be supplied after the reactant. By changing the supply order, the membrane quality or composition ratio of the formed membrane can be changed.

[0160] In addition to forming SiO and SiN films on wafer 200, this disclosure is also suitable for forming Si-based oxide films such as silicon oxycarbonate (SiOC film), silicon oxycarbonate (SiOCN film), and silicon oxynitride (SiON film) on wafer 200.

[0161] Preferably, the process for film formation is prepared individually according to the processing requirements and stored in the storage device 121c via an electrical communication line or an external storage device 123. Then, when starting various processes, the CPU 121a preferably selects the appropriate process from the multiple processes stored in the storage device 121c according to the processing requirements. As a result, thin films of various types, compositions, qualities, and thicknesses can be formed universally and with good reproducibility using a single substrate processing apparatus. In addition, it can reduce the operator's workload, avoid operational errors, and enable the rapid initiation of various processes.

[0162] The aforementioned process is not limited to the case of new manufacturing; for example, it can be prepared by modifying an existing process already installed in the substrate processing apparatus. In the case of process modification, the modified process can be installed in the substrate processing apparatus via an electrical communication line or a storage medium recording the process. Alternatively, the existing process already installed in the substrate processing apparatus can be directly modified by operating the input / output device 122 of the existing substrate processing apparatus.

[0163] In the above-described method, an example of forming a film using a batch-type substrate processing apparatus that processes multiple substrates at a time has been explained. This disclosure is not limited to the above-described method; for example, it can also be appropriately applied when forming a film using a monolithic substrate processing apparatus that processes one or several substrates at a time. Furthermore, in the above-described method, an example of forming a film using a substrate processing apparatus equipped with a hot-wall type furnace has been explained. This disclosure is not limited to the above-described method; it can also be appropriately applied when forming a film using a substrate processing apparatus equipped with a cold-wall type furnace.

[0164] When using these substrate processing apparatuses, each processing can be performed under the same processing procedures and conditions as described above or in the modified examples, and the same effects as described above or in the modified examples can be obtained.

[0165] The above methods or variations can be used in appropriate combinations. In this case, the processing procedures and conditions can be set to be the same as those of the above methods or variations.

[0166] Symbol Explanation

[0167] 201… Processing Room

[0168] 31…Electrode Unit

[0169] 300…electrode

[0170] 300-1… First electrode (first electrode)

[0171] 300-2… Second electrode (second electrode)

[0172] 300a…First electrode section (First electrode section)

[0173] 300b…Second Electrode Section (Second Electrode Section)

[0174] 300c… Third electrode section (third electrode section).

Claims

1. A substrate processing apparatus, characterized in that, have: The processing chamber, which processes the substrate; as well as The first electrode unit includes: The first electrode portion has a first electrode and a second electrode of equal length, the first electrode being subjected to high-frequency power, and the second electrode being given a reference potential. The second electrode portion has a first electrode and a second electrode having lengths different from the first electrode and the second electrode of the first electrode portion; and The third electrode portion has first and second electrodes with lengths different from those of the first and second electrodes of the first electrode portion and the first and second electrodes of the second electrode portion.

2. The substrate processing apparatus according to claim 1, characterized in that, The number of the first electrode and the number of the second electrode are equal.

3. The substrate processing apparatus according to claim 1, characterized in that, The number of the first electrode and the number of the second electrode are different.

4. The substrate processing apparatus according to claim 3, characterized in that, Multiple first electrodes are provided.

5. The substrate processing apparatus according to claim 3, characterized in that, The first electrode is continuously configured.

6. The substrate processing apparatus according to claim 1, characterized in that, The lengths of the first and second electrodes of the first electrode portion are longer than the lengths of the first and second electrodes of the second electrode portion and the first and second electrodes of the third electrode portion.

7. The substrate processing apparatus according to claim 1, characterized in that, The lengths of the first and second electrodes of the second electrode portion are shorter than the lengths of the first and second electrodes of the first electrode portion, but longer than the lengths of the first and second electrodes of the third electrode portion.

8. The substrate processing apparatus according to claim 1, characterized in that, The lengths of the first and second electrodes of the third electrode section are shorter than the lengths of the first and second electrodes of the first electrode section and the first and second electrodes of the second electrode section.

9. The substrate processing apparatus according to claim 1, characterized in that, The first electrode section, the second electrode section, and the third electrode section are arranged sequentially.

10. The substrate processing apparatus according to claim 1, characterized in that, The substrate processing apparatus includes: a second electrode unit, comprising: The fourth electrode section has a first electrode and a second electrode of equal length, the first electrode being applied with high-frequency power and the second electrode being given a reference potential; and The fifth electrode section has a first electrode and a second electrode with lengths equal to those of the first electrode and the second electrode of the fourth electrode section.

11. The substrate processing apparatus according to claim 1, characterized in that, The substrate processing apparatus includes: a second electrode unit, comprising: The fourth electrode section has a first electrode and a second electrode of equal length, the first electrode being applied with high-frequency power and the second electrode being given a reference potential; and The fifth electrode section has a first electrode and a second electrode with lengths different from the first electrode and the second electrode of the fourth electrode section.

12. The substrate processing apparatus according to claim 10 or 11, characterized in that, The number of the first electrode and the number of the second electrode are equal.

13. The substrate processing apparatus according to claim 10 or 11, characterized in that, The number of the first electrode and the number of the second electrode are different.

14. The substrate processing apparatus according to claim 1, characterized in that, The first electrode unit is located on the outside of the processing chamber.

15. The substrate processing apparatus according to claim 12, characterized in that, The lengths of the first and second electrodes of the first electrode section are shorter than the lengths of the first and second electrodes of the fourth electrode section.

16. The substrate processing apparatus according to claim 13, characterized in that, The lengths of the first and second electrodes of the first electrode portion are shorter than the lengths of the first and second electrodes of the fourth electrode portion and the first and second electrodes of the fifth electrode portion.

17. A plasma generation device, characterized in that, have: The first electrode unit includes: The first electrode portion has a first electrode and a second electrode of equal length, the first electrode being subjected to high-frequency power, and the second electrode being given a reference potential. The second electrode portion has a first electrode and a second electrode having lengths different from the first electrode and the second electrode of the first electrode portion; and The third electrode portion has first and second electrodes with lengths different from those of the first and second electrodes of the first electrode portion and the first and second electrodes of the second electrode portion.

18. A substrate processing method, characterized in that, It has the following processes: The substrate is moved into the processing chamber; as well as Plasma is generated using a first electrode unit, the first electrode unit comprising: The first electrode portion has a first electrode and a second electrode of equal length, the first electrode being subjected to high-frequency power, and the second electrode being given a reference potential. The second electrode portion has a first electrode and a second electrode having lengths different from the first electrode and the second electrode of the first electrode portion; and The third electrode portion has first and second electrodes with lengths different from those of the first and second electrodes of the first electrode portion and the first and second electrodes of the second electrode portion.

19. A method for manufacturing a semiconductor device, characterized in that, A semiconductor device is manufactured using a substrate processed by the substrate processing method of claim 18.

20. A program, characterized in that, The following process is executed by the substrate processing device using a computer: The substrate is moved into the processing chamber; as well as Plasma is generated using a first electrode unit, the first electrode unit comprising: The first electrode portion has a first electrode and a second electrode of equal length, the first electrode being subjected to high-frequency power, and the second electrode being given a reference potential. The second electrode portion has a first electrode and a second electrode having lengths different from the first electrode and the second electrode of the first electrode portion; and The third electrode portion has first and second electrodes with lengths different from those of the first and second electrodes of the first electrode portion and the first and second electrodes of the second electrode portion.

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