Substrate processing apparatus, substrate processing method, method for manufacturing semiconductor device, and program

Abstract

The present invention is provided with: a processing chamber for processing a substrate; a substrate support part having a substrate support surface capable of supporting a substrate in the processing chamber; a first gas supply unit capable of supplying a processing gas to the processing chamber via a first gas supply hole; a second gas supply unit capable of supplying a non-process gas to a side of the substrate support unit via a second gas supply hole; a first wall provided between the substrate support part and the second gas supply hole in the horizontal direction, the upper end of the first wall being provided at a position higher than the upper end of the substrate support part; a first exhaust flow path provided between the first wall and the substrate support portion; and a second exhaust flow path provided below the second gas supply hole.

Description

Technical Field

[0001] This invention relates to a substrate processing apparatus, a substrate processing method, and a method and procedure for manufacturing a semiconductor device. Background Technology

[0002] To improve production efficiency, substrate processing apparatuses exist that process multiple substrates together. For example, Japanese Patent Application Publication No. 2022-2263 discloses an apparatus that processes substrates with multiple substrate mounting surfaces arranged in a processing chamber and substrates mounted on each substrate mounting surface. Summary of the Invention

[0003] The problem that the invention aims to solve

[0004] However, in the aforementioned previous examples, there is a concern about the uneven supply of processing gas to the substrate surface.

[0005] This disclosure aims to achieve uniformity in substrate processing.

[0006] Solution for solving the problem

[0007] According to one aspect of this disclosure, a technology is provided that has:

[0008] The processing chamber, which processes the substrate;

[0009] The substrate support portion has a substrate support surface capable of supporting the substrate within the processing chamber;

[0010] A first gas supply unit is capable of supplying processing gas to the processing chamber through a first gas supply port;

[0011] The second gas supply unit is capable of supplying non-processed gas to the side of the substrate support unit through the second gas supply hole;

[0012] The first wall is disposed horizontally between the substrate support and the second gas supply hole, and its upper end is disposed at a position higher than the upper end of the substrate support.

[0013] A first exhaust flow path is disposed between the first wall and the substrate support portion; and

[0014] The second exhaust flow path is located below the second gas supply hole.

[0015] The effects of the invention

[0016] According to this disclosure, uniformity in substrate processing can be achieved. Attached Figure Description

[0017] Figure 1 This is an explanatory diagram illustrating the substrate processing apparatus of the first embodiment.

[0018] Figure 2 This is an explanatory diagram illustrating the substrate processing apparatus of the first embodiment.

[0019] Figure 3 This is an explanatory diagram illustrating the substrate processing apparatus of the first embodiment.

[0020] Figure 4 This is an explanatory diagram illustrating the substrate processing apparatus of the first embodiment.

[0021] Figure 5 This is an explanatory diagram illustrating the first gas supply section of the first embodiment.

[0022] Figure 6 This is an explanatory diagram illustrating the second gas supply section of the first embodiment.

[0023] Figure 7 yes Figure 2 Enlarged illustration of section B in the diagram.

[0024] Figure 8 This is an explanatory diagram illustrating the controller of the first embodiment.

[0025] Figure 9 This is an explanatory diagram illustrating the processing flow of the substrate according to the first embodiment.

[0026] Figure 10 It is the second embodiment and Figure 7 A significantly enlarged explanatory diagram. Detailed Implementation

[0027] The following describes a first embodiment of this disclosure. Elements represented by the same symbols in the various figures are the same or identical elements. Furthermore, descriptions and symbols repeated in the embodiments described below may sometimes be omitted. Additionally, the figures used in the following description are schematic, and the dimensional relationships and ratios of the elements shown may not necessarily correspond to reality. Moreover, the dimensional relationships and ratios of elements may not be consistent between multiple figures.

[0028] [First Implementation Method]

[0029] First, using Figures 1 to 7 The substrate processing apparatus 100 of this embodiment will be described below. Figure 1 In this diagram, the bottom of the image is represented as the front, and the top of the image is represented as the back.

[0030] (Substrate processing apparatus)

[0031] The substrate processing apparatus 100 includes an I / O platform (loading interface) 110, an atmospheric conveying unit 120, a loading locking unit 130, a vacuum conveying unit 140, and a substrate processing unit 150. Furthermore, the substrate processing unit 150 includes a processing chamber 201, a substrate support stage 210 (an example of a substrate support), a first gas supply unit 300, an inert gas supply unit 320, a first wall 351, a first exhaust path 361, and a second exhaust path 362.

[0032] (Atmospheric transport chamber / IO platform)

[0033] An I / O platform (loading interface) 110 is provided in front of the substrate processing apparatus 100. Multiple wafer containers 111 are mounted on the I / O platform 110. The wafer containers 111 serve as carriers for transporting substrates such as silicon (Si) substrates. Within each wafer container 111, multiple unprocessed product substrates (PS), processed product substrates (PS), and dummy substrates (DS) with pre-formed circuitry are arranged horizontally. Furthermore, in the following description, when referring only to substrate S, it may sometimes include either or both of the product substrates (PS) and dummy substrates (DS).

[0034] The wafer container 111 is provided with a lid, which is opened and closed by a container opener (not shown). The container opener opens and closes the lid of the wafer container 111 placed on the I / O platform 110, allowing the substrate S to enter and exit the wafer container 111 through the open / close substrate inlet / outlet 128. The wafer container 111 is supplied and discharged relative to the I / O platform 110 by an AMHS (Automated Material Handling Systems, not shown).

[0035] The IO platform 110 is adjacent to the atmospheric transport unit 120. The atmospheric transport unit 120 is connected to the loading locking unit 130 (described later) on a different surface from the IO platform 110.

[0036] An air transport robot 122 with a movable base plate S installed inside the air transport section 120 is configured to move up and down via an elevator installed in the air transport section 120, and to reciprocate in the left and right directions via a linear actuator.

[0037] A substrate loading / unloading outlet 129 is provided behind the atmospheric conveying section 120 for loading and unloading substrate S into and out of the loading locking section 130. The substrate loading / unloading outlet 129 is opened / closed by a gate valve, thereby allowing the loading and unloading of substrate S.

[0038] (Loading Locked Section)

[0039] The loading locking part 130 has a standby part 135 that supports the substrate S. The standby part 135 supports the substrate S transported from the atmospheric transport part and the substrate S transported from the vacuum transport part 140.

[0040] A substrate loading / unloading outlet 131 is provided between the loading locking section 130 and the vacuum conveying section 140. A gate valve (not shown) is provided near the substrate loading / unloading outlet 131 to isolate the loading locking section 130 from the vacuum conveying section 140.

[0041] (Vacuum Transport Department)

[0042] A vacuum transport robot 142 is provided in the vacuum transport section 140 for transporting substrate S. The vacuum transport robot 142 transports substrate S between the loading and locking section 130 and the substrate processing section 150. The vacuum transport robot 142 has at least fingers 143, arms 144, and a base 145. In addition, the vacuum transport robot 142 has a robot control section 146 that controls the rotation, extension, etc. of the arms 144.

[0043] The substrate S is supported on the finger 143, and the arm 144 rotates and extends under the control of the robot control unit 146, while moving between the loading locking unit 130 and the substrate processing unit 150.

[0044] Similarly, a substrate loading / unloading outlet 141 is also provided between the vacuum transport section 140 and the substrate processing section 150. A gate valve (not shown) is provided near the substrate loading / unloading outlet 141 to isolate the vacuum transport section 140 from the substrate processing section 150.

[0045] (Substrate Processing Department)

[0046] Next, the specific structure of the substrate processing unit 150 will be explained.

[0047] like Figure 1 , 2 As described, the substrate processing unit 150 includes a processing container 202. The processing container 202 is also called a processing module. The processing container 202 is configured as, for example, a flat, square, sealed container. Furthermore, the processing container 202 is made of a metallic material such as aluminum (Al) or stainless steel (SUS). A processing chamber 201 for processing the substrate S is formed within the processing container 202. The processing chamber 201 is composed of a gas supply structure 230, a substrate support stage 210, etc., as described later.

[0048] A substrate loading / unloading outlet 141 adjacent to the gate valve 208 is provided on the side of the processing container 202, and the substrate S moves between the substrate loading / unloading outlet 141 and the vacuum conveying unit 140.

[0049] The substrate support stage 210 has a substrate support surface 211 capable of supporting the substrate S within the processing chamber 201. The substrate support stage 210 is configured to heat the substrate S. Multiple substrate support stages 210 are arranged in the processing container 202 with the axis 221 described later as the center. Utilizing... Figure 1 This describes the configuration of the substrate support stage 210. Additionally, the longitudinal sectional view of AA corresponds to... Figure 2 .

[0050] At least four substrate support stages 210 are provided. Specifically, substrate support stages 210a, 210b, 210c, and 210d are arranged clockwise from the position opposite to the substrate loading / unloading outlet 141.

[0051] The substrate support stage 210 has substrate support surfaces 211 (substrate support surfaces 211a to 211d) for respectively placing substrates S, and recesses 215 (recesses 215a to 215d) provided on the outer periphery of the substrate support surfaces 211. That is, multiple substrate support surfaces 211 are arranged radially in the processing container 202.

[0052] The substrate support stage 210 has an upper surface 214 (upper surface 214a to upper surface 214d) facing the gas supply section, which is part of the convex structure constituting the recess 215. Since the upper surface 214 does not support the substrate S, it can also be considered a non-substrate support surface, corresponding to the substrate support surface. For ease of explanation, the non-substrate support surface is described as part of the convex structure, but it can be any surface that does not support the substrate, such as a surface that is continuous with or adjacent to the substrate support surface 211.

[0053] Furthermore, the substrate support stage 210 has heaters 213 (213a to 213d) that serve as a heating source. In the substrate support stage 210, through holes through which the lifting pins 207 pass are respectively provided at positions corresponding to the lifting pins 207.

[0054] The substrate support platform 210 is supported by shafts 217 (shafts 217a to 217b). Shafts 217 pass through the bottom 204 of the processing container 202.

[0055] The diameter of the substrate support surface 211 is configured to be slightly larger than the diameter of the substrate S. Therefore, when the substrate S is placed, there is a gap that does not support the substrate S. As described above, this gap can also be referred to as the non-substrate support surface.

[0056] A lifting pin 207 is provided through the bottom 204. The lifting pin 207 is positioned so that it can pass through the through hole provided in the substrate support stage 210. The front end of the lifting pin 207 supports the substrate S when the substrate is moved in / out.

[0057] A lifting pin support portion 212 (212a to 212d) is provided at the lower end of the lifting pin 207. A substrate lifting portion 216 (216a to 216d) is provided in each lifting pin support portion 212. The substrate lifting portion 216 causes the lifting pin 207 to move up and down. The lifting pin support portion 212 and the substrate lifting portion 216 are provided correspondingly to each substrate support platform 210a to 210d.

[0058] Gas supply structures 230 (230a to 230d) serving as gas dispersion mechanisms are provided at positions on the cover 203 of the processing container 202 opposite to the support surfaces 211 of each substrate. Viewed from above, they appear as follows: Figure 4 As recorded, it is equipped with multiple gas supply structures 230.

[0059] like Figure 4 As described, each gas supply structure 230 is provided with a gas supply hole 231. Specifically, a gas supply hole 231a is provided in gas supply structure 230a, a gas supply hole 231b is provided in gas supply structure 230b, a gas supply hole 231c is provided in gas supply structure 230c, and a gas supply hole 231d is provided in gas supply structure 230d. Gas supply holes 231a, 231b, 231c, and 231d are connected to distribution pipes 305a, 305b, 305c, and 305d of the common gas supply pipe 301, which will be described later. Furthermore, Figure 4 The longitudinal section view of the CC line is equivalent to Figure 2 The processing gas, described later, is supplied from the gas supply structure 230.

[0060] A second annular gas supply hole 241 is provided around the gas supply structure 230 of the cover portion 203. Specifically, a second gas supply hole 241a is provided around the gas supply structure 230a. A second gas supply hole 241b is provided around the gas supply structure 230b. A second gas supply hole 241c is provided around the gas supply structure 230c. A second gas supply hole 241d is provided around the gas supply structure 230d. Gas supply holes 241a, 241b, 241c, and 241d are respectively connected to the distribution pipes 505a, 505b, 505c, and 505d of the gas supply pipe 501 described later. The non-processed gas described later is supplied through the second gas supply hole 241.

[0061] The space between each gas supply structure 230 and the substrate S is referred to as the processing space 209. Furthermore, the structure constituting the processing space 209 is referred to as the processing chamber 201. In this embodiment, the structure constituting the processing space 209a and having at least the gas supply structure 230a and the substrate support stage 210a is referred to as the processing chamber 201a. The structure constituting the processing space 209b and having at least the gas supply structure 230b and the substrate support stage 210b is referred to as the processing chamber 201b. The structure constituting the processing space 209c and having at least the gas supply structure 230c and the substrate support stage 210c is referred to as the processing chamber 201c. The structure constituting the processing space 209d and having at least the gas supply structure 230d and the substrate support stage 210d is referred to as the processing chamber 201d.

[0062] Furthermore, although it is described here that the processing chamber 201 has at least a gas supply structure 230 and a substrate support stage 210, any structure that constitutes the processing space 209 of the processing substrate S is acceptable. Depending on the device structure, it is not limited to the structure of the gas supply structure 230, etc. The same applies to other processing chambers.

[0063] like Figure 1 As described, each substrate support platform 210 is arranged around a shaft 221. A rotating arm 222 is provided on the shaft 221. The rotating arm 222 has multiple arms 223 and a fixing part 224 that fixes each arm 223 to the shaft 221. The fixing part 224 is fixed to the shaft 221. Each arm 223 is arranged radially around the fixing part 224.

[0064] The shaft 221 is configured to penetrate the top 203 of the processing container 202, and a lifting and rotating part 225 is provided on the outer side of the processing container 202, on a side different from the rotating arm 222. The lifting and rotating part 225 causes the shaft 221 to be raised, lowered, or rotated. The lifting and rotating part 225 enables independent raising and lowering of the shaft 221 from each substrate support platform 210. The rotation direction, for example, is... Figure 1 Rotate in the direction of the arrow.

[0065] Multiple claws 226 protruding in the rotation direction of the rotating arm 222 are provided at the front end of the arm 223. The claws 226 form the back side of the support substrate S.

[0066] When the rotating arm 222 picks up the substrate S from the substrate support stage 210, from Figure 2 The state of this causes the lifting pin 207 to rise and the shaft 221 to fall. At this time, as... Figure 3As shown, the rotating arm 222 is positioned higher than the substrate support surface 211. Furthermore, on the substrate support surface 211, at a position higher than the rotating arm 222, the lifting pin 207 supports the substrate S. By rotating the rotating arm 222, the claw 226 is positioned below the substrate S. Then, by lowering the lifting pin 207, the substrate S moves onto the claw 226.

[0067] When moving the substrate S from the rotating arm 222 to the substrate support stage 210, the lifting pin 207 and the rotating arm 222 are controlled in reverse order. Furthermore, during the substrate processing described later, the rotating arm 222... Figure 2 As shown, it is in standby above the processing container 202.

[0068] Shaft 221, arm 223, and fixing part 224 are collectively referred to as substrate rotation part 220. Substrate rotation part 220 may also include lifting rotation part 225. Substrate rotation part 220 is also referred to as substrate transport part. In addition, any combination or combination of substrate lifting part and substrate rotation part may be collectively referred to as lifting part.

[0069] In the horizontal direction of the processing chamber 201, a first wall 351 is provided between the substrate support 210 and the second gas supply hole 241. The upper end of the first wall 351 is positioned higher than the upper surface 214, which is an example of the upper end of the substrate support 210. By raising the first wall 351, the processing gas is reliably contained in the area above the substrate support 210, and the intrusion of non-processing gas onto the substrate edge is suppressed, thereby preventing the dilution of the processing gas at the substrate edge. The substrate edge refers to the outer peripheral portion of the substrate S.

[0070] like Figure 2 , Figure 3 As shown, a partition member 250 may also be provided between multiple substrate support platforms 210, which divides the processing chamber 201 into upper and lower sections at the height of the substrate support platforms 210. The partition member 250 is used to homogenize the pressure in the processing space 209, etc. As will be described later, by forming an air curtain caused by non-processing gases, gases do not adhere to the partition member 250.

[0071] (Exhaust system)

[0072] The exhaust system 260 is described as venting ambient gases from the processing container 202. The exhaust system 260 is configured to correspond to each processing space 209 (209a to 209d). For example, processing space 209a corresponds to exhaust system 260a, processing space 209b corresponds to exhaust system 260b, processing space 209c corresponds to exhaust system 260c, and processing space 209d corresponds to exhaust system 260d.

[0073] The exhaust system 260 has an exhaust pipe 262 (262a-262d) communicating with exhaust ports 261 (261a-261d), and also has an APC (Auto Pressure Controller) 266 (266a-266d) provided in the exhaust pipe 262. The APC 266 has a valve core (not shown) with an adjustable opening, which adjusts the conduction of the exhaust pipe 262 according to the instructions from the controller 400. In addition, a valve 267 (267a-267d) is provided in the exhaust pipe 262 upstream of the APC 266.

[0074] The exhaust pipe 262, valve 267, and APC 266 are collectively referred to as the exhaust system 260.

[0075] Furthermore, the exhaust pipe 262, pressure monitor unit (not shown), valve 267, and APC 266 are collectively referred to as the exhaust section. A DP (Dry Pump) 269 is provided downstream of the exhaust pipe 262. The DP 269 discharges ambient gas from the treatment chamber 201 via the exhaust pipe 262. In this embodiment, the DP 269 is provided for each exhaust system 260, but it is not limited to this and can be used for all exhaust systems.

[0076] The sensors detect the status of each component. For example, they detect the operating time or number of cycles of heater 213, and the operating time or number of cycles of valve 267 or APC 266. Additionally, regarding... Figure 3 The description of the sensor has been omitted for ease of explanation.

[0077] (Gas Supply Department)

[0078] Next, using Figure 5 , Figure 6 Let me explain the first gas supply unit 300 and the non-processing gas supply unit 500. First, in Figure 5 The first gas supply section 300, which is connected to the gas supply port 231 (231a to 231d), is described below. The first gas supply section 300 includes, for example, a first processing gas supply section 310 and a second processing gas supply section 330.

[0079] Each gas supply port 231 is configured to communicate with a distribution pipe 305 (305a to 305d). Each distribution pipe 305 is connected to a common gas supply pipe 301 via a manifold 306.

[0080] Gas supply structures 230 (230a-230d) are connected to distribution pipes 305 (305a-305d). That is, each distribution pipe 305 is configured to correspond to each substrate support surface 211. Valves 302 (302a-302d) and flow controllers (flow control units), namely MFC 303 (303a-303d), are provided in each distribution pipe 305 (305a-305d). Each MFC 303 (303a-303d) is connected to a flow meter (not shown). The amount of gas supplied to each processing chamber 201 is determined by the flow rate and measurement time measured by the flow meter.

[0081] The gas supply from the distribution pipe 305 to the processing chamber 201 is measured by a flow meter (not shown). The gas supply to each processing chamber 201 is adjusted using valves 302 and MFC 303. The common gas supply pipe 301 connects to the first gas supply pipe 311 and the third gas supply pipe 331.

[0082] The common gas supply system is mainly composed of distribution pipe 305, manifold 306, valve 302, and MFC 303. A flow meter may also be included in the common gas supply system.

[0083] The first processing gas supply unit 310 is described below. The first processing gas supply unit 310 is configured to supply first processing gas to the processing chamber 201 via the first gas supply port 231. In the first processing gas supply unit 310, the first gas supply pipe 311 is provided with a first gas source 312, an MFC 313 and an on / off valve, i.e., a valve 314, in sequence from the upstream direction.

[0084] The first gas source 312 is a first processing gas source (also called "gas containing the first element") containing a first element. The gas containing the first element is one of the raw material gases, i.e., the processing gases. Here, the first element is silicon (Si). That is, the gas containing the first element is a silicon-containing gas. Specifically, dichlorosilane (SiH2Cl2, also known as DCS) or hexachlorosilane (Si2Cl6, also known as HCDS) gas can be used as the silicon-containing gas.

[0085] The first processing gas supply unit 310 (also known as the silicon-containing gas supply system) is mainly composed of the first gas supply pipe 311, MFC 313, and valve 314.

[0086] Next, the second processing gas supply unit 330 will be described. The second processing gas supply unit 330 supplies the second processing gas to the processing chamber 201 through, for example, the first gas supply port 231. In the third gas supply pipe 331, a third gas source 332, an MFC 333, and an on / off valve, i.e., a valve 334, are arranged sequentially from the upstream direction.

[0087] The third gas source 332 is a second process gas source (hereinafter also referred to as "second element-containing gas") containing the second element. The second element-containing gas is one of the process gases. In addition, the second element-containing gas can also be considered as a reactant gas.

[0088] Here, the gas containing the second element contains a second element that is different from the first element. The second element is, for example, oxygen (O). In this embodiment, the gas containing the second element is, for example, an oxygen-containing gas. Specifically, ozone (O3) gas can be used as the oxygen-containing gas.

[0089] Oxidizing agents (oxidizing gases) can be, for example, gases containing oxygen (O) and hydrogen (H). Examples of gases containing O and H include water vapor (H₂O), hydrogen peroxide (H₂O₂), hydrogen (H₂) + oxygen (O₂), and H₂ + ozone (O₃). In addition to gases containing O and H, oxygen-containing gases can also be used as oxidizing agents. Examples of O-containing gases include O₂, O₃, nitrous oxide (N₂O), nitric oxide (NO), nitrogen dioxide (NO₂), carbon monoxide (CO), and carbon dioxide (CO₂). Furthermore, gases containing both O and H are also considered O-containing gases. One or more of the above can be used as oxidizing agents.

[0090] As used in this specification, the term "agent" includes at least one of gaseous and liquid substances. Liquid substances include mist substances. That is, film-forming agents, modifiers, and etchants may include gaseous substances, or liquid substances such as mist substances, or both.

[0091] The second processing gas supply unit 330 (also known as the reaction gas supply system) is mainly composed of the third gas supply pipe 331, MFC 333, and valve 334.

[0092] Furthermore, either the first processing gas supply unit 310 or the second processing gas supply unit 330, or a combination thereof, is referred to as the first gas supply unit 300. For ease of explanation, the first processing gas supply unit 310 and the second processing gas supply unit 330 are configured to be connected to the common gas supply pipe 301, but are not limited thereto. As long as gas can be supplied to the processing chamber 201 from each gas supply unit, it can be configured, for example, that the gas supply units have a manifold 306 and a distribution pipe 305, with each gas supply unit supplying gas to the processing chamber 201 using a different system. Alternatively, the first processing gas and the second processing gas can be collectively referred to as processing gas. The processing gas can be any gas that facilitates substrate processing, and may also include other gases.

[0093] The status of each structure is detected by sensors (not shown). Sensors, for example, detect the operating time or number of operations of the MFC, and the operating time or number of operations of the valves. When a flow meter (not shown) is connected to the sensors, it detects the flow rate of each distribution pipe 305.

[0094] The flow meter and sensor are collectively referred to as the detection unit. Alternatively, either the flow meter or the sensor can be referred to as the detection unit.

[0095] exist Figure 6 In this embodiment, the non-processing gas supply unit 500 includes an inert gas supply unit 320 capable of supplying, for example, an inert gas. The inert gas supply unit 320 is configured to supply non-processing gas to the side of the substrate support stage 210 via a second gas supply hole 241. The inert gas supply unit 320 creates an air curtain caused by the non-processing gas on the side of the substrate support stage 210.

[0096] Each gas supply port 241 is configured to communicate with a distribution pipe 505 (505a to 505d). Each distribution pipe 505 is connected to a gas supply pipe 501 via a manifold 506.

[0097] Valves 502 (502a-502d) and MFC503 (503a-503d) are installed in distribution pipes 505 (505a-505d). Flow meters (not shown) are connected to MFC503 (503a-503d) respectively. The supply amount of non-processed gas to each processing chamber 201 is determined by the flow rate and measurement time measured by the flow meters.

[0098] The gas supply from distribution pipe 505 is measured by a flow meter (not shown). The gas supply to each processing chamber 201 is adjusted using valves 502 and MFC 503. A second gas supply pipe 321 is connected to gas supply pipe 501.

[0099] The gas supply system is mainly composed of distribution pipe 505, manifold 506, valve 502, and MFC 503. A flow meter may also be included in the gas supply system.

[0100] In the second gas supply pipe 321, a second gas source 322, an MFC 323 and an on / off valve 324 are sequentially provided from the upstream direction.

[0101] The second gas source 322 is a non-processing gas (also referred to as a "gas containing a third element") source containing a third element. The gas containing the third element is, for example, an inert gas. By setting the non-processing gas to an inert gas, even if the non-processing gas were to intrude into the adjacent substrate support stage 210, the impact on the substrate processing would be reduced. Here, nitrogen (N2) gas can be used as the third element, for example. In addition, rare gases such as argon (Ar), helium (He), neon (Ne), and xenon (Xe) gas can be used. One or more of the above-mentioned gases can be used as the inert gas.

[0102] Alternatively, the main component of the non-processing gas can be the same as that of the processing gas. By setting the air curtain formed by the non-processing gas to have the same main component as the processing gas, dilution of the first gas supplied to the edge of the substrate can be suppressed.

[0103] The inert gas supply unit 320 (also known as the inert gas supply system) is mainly composed of the second gas supply pipe 321, MFC 323, and valve 324.

[0104] exist Figures 1-3 , Figure 7 In this configuration, a first exhaust flow path 361 is provided between the first wall 351 and the substrate support stage 210. Specifically, a third wall 353 is provided on the side of the substrate support stage 210, and the first exhaust flow path 361 is provided between the first wall 351 and the third wall 353. The first wall 351, the second wall 352, and the third wall 353 are constructed using multiple cylindrical components arranged concentrically. Alternatively, the third wall 353 may be omitted.

[0105] The second exhaust flow path 362 is located below the second gas supply hole 241. Specifically, a second wall 352 is provided below the second gas supply hole 241 and on the outer side of the first wall 351 in the horizontal direction, forming the second exhaust flow path 362 between the second wall 352 and the first wall 351. With this structure, an air curtain formed by non-processed gas can be formed on the outer side of the first wall 351.

[0106] like Figure 7 As shown, the height of the upper end of the second wall 352 can also be configured to be the same as or lower than the height of the upper end of the first wall 351. In the illustrated example, the height of the upper end of the second wall 352 is lower than the height of the upper end of the first wall 351, but higher than the upper surface 14A of the substrate support stage 210. By setting the second wall to be lower than the first wall, unprocessed gases are less likely to move towards the inside of the first wall, thus suppressing excessive dilution of the processed gases.

[0107] The inner surface of the second gas supply port 241 can also be provided on the second exhaust flow path 362. This structure facilitates the movement of untreated gas to the second exhaust flow path 362.

[0108] The first gas supply hole 231 can also be provided horizontally on the side closer to the substrate support surface 211 than the second gas supply hole 241. With this structure, non-processed gases can be used more effectively as air curtains.

[0109] The combination of the first wall 351, the first exhaust flow path 361, and the second exhaust flow path 362 is respectively provided corresponding to the substrate support stage 210. This suppresses gas flow to adjacent substrate support stages 210, thus allowing independent substrate processing at each substrate support stage 210 without being affected by gas from adjacent substrate support stages 210. For example, each stage can be processed uniformly.

[0110] Furthermore, since the processing gas can be confined to each substrate support stage 210 by the non-processing gas while suppressing the non-processing gas from intruding into the substrate edge, the non-processing gas is prevented from intruding into the adjacent substrate support stage 210, and the dilution caused by the non-processing gas at the substrate edge can be further suppressed.

[0111] exist Figure 7 A heater 371 capable of heating the first exhaust flow path 361 may also be provided. The heater 371 is positioned at a location capable of heating the first exhaust flow path 361, for example, below the first exhaust flow path 361. The heater 371 heats the first exhaust flow path 361 to a temperature at which the processed gas flowing through the first exhaust flow path 361 can maintain its gaseous state. Furthermore, the heater 271 may also be configured to heat a wall facing the outlet side of the first exhaust flow path. By colliding with this wall, the gas flowing through the first exhaust flow path 361 can be considered to form a film on the wall. Therefore, by heating the wall, film formation on the wall can be suppressed.

[0112] In particular, when alternating the supply of raw material gas as processing gas and the circulation of reaction gas that reacts with the raw material gas, it can be assumed that the reaction gas remaining in the first exhaust flow path 361 will react with the processing gas to form a film that adheres to the inner wall of the first exhaust flow path 361. However, by heating the first exhaust flow path 361 with the heater 371, the adhesion of the film to the first exhaust flow path 361 can be suppressed, and the generation of particles caused by film peeling can be suppressed.

[0113] The first exhaust flow path 361 and the second exhaust flow path 362 can also be connected. Furthermore, a heater 372 capable of heating the second exhaust flow path 362 can also be provided. The heater 372 heats the first exhaust flow path 361 to a temperature at which the processed gas flowing into the second exhaust flow path 362 can maintain its gaseous state. If the first exhaust flow path 361 and the second exhaust flow path 362 are connected, it can be assumed that the processed gas flows into the second exhaust flow path 362 and the membrane adheres to the wall of the second exhaust flow path 362. However, by heating the second exhaust flow path 362 with the heater 372, membrane adhesion to the second exhaust flow path 362 can be suppressed, thus suppressing the generation of particles caused by membrane peeling.

[0114] A third exhaust flow path 363 may also be provided, connecting the first exhaust flow path 361 and the second exhaust flow path 362. Furthermore, a heater 373 capable of heating the third exhaust flow path 363 may also be provided. The heater 373 heats the first exhaust flow path 361 to a temperature at which the processed gas flowing into the third exhaust flow path 363 can maintain its gaseous state. In the illustrated example, the first exhaust flow path 361 and the second exhaust flow path 362 merge downstream of each other to form the third exhaust flow path 363. If the third exhaust flow path 363 is connected to the first exhaust flow path 361 and the second exhaust flow path 362, it can be assumed that the processed gas flows into the third exhaust flow path 363 and the membrane adheres to it. However, by providing the heater 373 to heat the third exhaust flow path 363, membrane adhesion to the third exhaust flow path 363 can be suppressed, thus suppressing the generation of particles caused by membrane peeling.

[0115] The exhaust volume of the second exhaust flow path 362 can also be configured to be larger than that of the first exhaust flow path 361. Furthermore, the flow rate of the non-processed gas upstream of both the second exhaust flow path 362 and the first exhaust flow path 361 can also be configured to be higher than the flow rate of the first gas. The width of the second exhaust flow path 362 can also be configured to be larger than the width of the first exhaust flow path 361.

[0116] This allows for an increase in the flow rate of the non-processed gas constituting the air curtain, and an increase in the partial pressure of the non-processed gas compared to the processed gas. Consequently, the processed gas can be more effectively confined to the space above the substrate support stage 210.

[0117] (Controller)

[0118] Next, the controller 400 will be described. The controller 400 is also called a control unit. The substrate processing apparatus 100 has a controller 400 that controls the operation of each part of the substrate processing apparatus 100. The controller 400 is as follows... Figure 8 As described, it includes at least an arithmetic unit (CPU) 410, a temporary storage unit (RAM) 420, a storage unit 430, and an I / O interface 440. The controller 400 is connected to each structure of the board processing device 100 via the I / O interface 440.

[0119] The arithmetic unit 410 includes a transceiver instruction unit 411 and a control unit 414. The transceiver instruction unit 411 controls the transmission and reception of control signals between the substrate processing apparatus 100 and surrounding devices.

[0120] The control unit 414 retrieves programs and recipes from the storage unit 430 according to instructions from the host device 460 and the user, and controls the actions of various structures such as the robot control unit 146 based on their contents. The storage unit 430 includes a recipe information storage unit 431 that stores recipe information.

[0121] The controller 400 can be configured as a dedicated computer or a general-purpose computer. For example, an external storage device (such as a magnetic disk, floppy disk, or hard disk, an optical disk, CD or DVD, an optical disc, USB flash drive, or memory card) 452 storing the aforementioned program can be prepared, and the program can be installed on a general-purpose computer using the external storage device 452, thereby configuring the controller 400 of this embodiment. In addition, the means for supplying the program to the computer are not limited to supplying it via the external storage device 452. For example, communication means such as the Internet or a dedicated line can be used, or information can be received from the host device 460 via the receiving unit 454, without supplying the program via the external storage device 452. Furthermore, an input / output device 451 such as a keyboard or touch panel can be used to instruct the controller 400.

[0122] Storage unit 430 and external storage device 452 constitute a computer-readable storage medium. Hereinafter, they will also be collectively referred to as storage media. Furthermore, when using the term "storage medium" in this specification, sometimes only storage unit 430 is included, sometimes only external storage device 452 is included, or sometimes both are included.

[0123] The controller 400 can also be configured to control the first gas supply unit 300 and the inert gas supply unit 500, so that the supply of non-processing gas is started first, followed by the supply of processing gas. By supplying non-processing gas first, the first gas can be more reliably confined to the substrate support stage 210.

[0124] The program causes the substrate processing device 100 to perform the following steps via a computer:

[0125] The step of supporting the substrate S on the substrate support surface 211 of the substrate support stage 210 (substrate support part) provided in the processing chamber 201; and

[0126] The process involves supplying processing gas to the substrate S via the first gas supply hole 231 and supplying non-processing gas to the side of the substrate support 210 (substrate support portion) via the second gas supply hole 241, while simultaneously discharging ambient gas from the processing chamber 201 in the horizontal direction between the substrate support 210 (substrate support portion) and the second gas supply hole 241 through the first exhaust flow path 361 and the second exhaust flow path 362. The first exhaust flow path 361 is located between the substrate support 210 (substrate support portion) and the first wall 351, with the upper end of the first wall 351 positioned higher than the upper end of the substrate support 210 (substrate support portion). The second exhaust flow path 362 is located below the second gas supply hole 241.

[0127] (Substrate processing method)

[0128] Next, using Figure 9 Explain the substrate processing methods.

[0129] The substrate processing method includes:

[0130] The process of supporting substrate S on substrate support surface 211 of substrate support table 210 (substrate support part) provided in processing chamber 201; and

[0131] The process involves supplying processing gas to the substrate S via the first gas supply hole 231 and supplying non-processing gas to the side of the substrate support 210 (substrate support portion) via the second gas supply hole 241, while simultaneously discharging ambient gas from the processing chamber 201 in the horizontal direction between the substrate support 210 (substrate support portion) and the second gas supply hole 241 through the first exhaust flow path 361 and the second exhaust flow path 362. The first exhaust flow path 361 is located between the substrate support 210 (substrate support portion) and the first wall 351, with the upper end of the first wall 351 positioned higher than the upper end of the substrate support 210 (substrate support portion). The second exhaust flow path 362 is located below the second gas supply hole 241.

[0132] The method for manufacturing a semiconductor device includes the substrate processing method described above.

[0133] In this embodiment, the process of supplying processing gas to the product substrate PS and processing the substrate will be described. For example, the process of supplying Si-containing gas and oxygen-containing gas to each substrate to form a SiO film will be described as an example.

[0134] In this embodiment, an example of processing four product substrates (PS) within a processing container 202 is described.

[0135] (S102)

[0136] This describes the substrate loading process S102, in which the product substrate PS is loaded into the processing container 202.

[0137] In the substrate processing apparatus 100, the rotating arm 222 is raised and rotated such that the claw 226 is positioned above the substrate support stage 210a. The vacuum transfer robot 142 moves the arm 144 to transfer the product substrate PS onto the claw 226.

[0138] Once the product substrate PS is transferred, the rotating arm 222 is rotated to transfer the product substrate PS to the claws 226 that are not supporting the product substrate PS. Then, once each claw 226 is positioned on the substrate support stage 210, the lifting pin 207 is raised, and the substrate is transferred from the claws 226 to the lifting pin 207. After the product substrate PS is transferred, the rotating arm 222 is raised, and the lifting pin 207 is lowered to transfer the product substrate PS to each substrate support surface 211.

[0139] Once the product substrate PS is placed on the substrate support surface 211, the gate valve 208 is closed to seal the processing container 202. The product substrate PS is then moved to the processing space 209.

[0140] When the product substrate PS is placed on each substrate support surface 211, power is supplied to each heater 213 to control the surface of the product substrate PS to a predetermined temperature. The temperature of the product substrate PS is, for example, above room temperature and 800°C. o Below 700°C, preferably above room temperature and 700°C. o Below C. At this time, the controller 400 extracts a control value based on the temperature information detected by the sensor, controls the power supply to the heater 213, and thus adjusts the temperature of the heater 213.

[0141] (S104)

[0142] Next, the gas supply process S104 will be described.

[0143] Once the product substrate PS moved to each processing space 209 is maintained at a predetermined temperature, the control gas supply unit 300 supplies silicon-containing gas and oxygen-containing gas in parallel to the processing space 209. Furthermore, non-processing gas is supplied from the non-processing gas supply unit 500 to form an air curtain. Simultaneously, gas is discharged from the exhaust system 260.

[0144] In the processing space 209, silicon-containing gas reacts with oxygen-containing gas to form a silicon oxide film, which serves as an insulating film 102, on the product substrate PS. At this time, an air curtain is formed. Since the silicon-containing gas and oxygen-containing gas are confined to the area above the substrate support stage 210 while inert gas intrusion into the substrate edge is suppressed, the dilution of the processing gas at the substrate edge is suppressed, and uniform processing can be performed within the substrate surface.

[0145] Furthermore, the parallel supply of Si-containing gas and oxygen-containing gas is described herein, but it is not limited to this. Si-containing gas and oxygen-containing gas may also be supplied independently and alternately, or at least partially simultaneously, for example, by alternating partial overlap.

[0146] After the predetermined time has elapsed, the gas supply will be stopped.

[0147] (S106)

[0148] Next, the substrate removal process S106 will be described. After the gas supply process S104, the processed product substrate PS is removed from the processing container 202. During removal, the product substrate PS is removed in the reverse order of the substrate loading process S102.

[0149] (S108)

[0150] Next, the determination S108 will be explained.

[0151] Here, it is determined whether the product substrate has been processed by PS for a predetermined number of wafers. The predetermined number of wafers refers to, for example, the number of wafers in a batch. If the predetermined number of wafers has been processed, the result is "Yes," and the process ends; if the predetermined number of wafers has not been processed, the result is "No," and the process proceeds to S110.

[0152] [Second Implementation]

[0153] exist Figure 10 In this embodiment, the upper end of the second wall 352 is configured to be higher than the upper end of the first wall 351. The same effect as the configuration described above can be achieved in this embodiment. Furthermore, in this embodiment, since the non-processed gas flows into the inner side of the second wall 352, the partial pressure of the non-processed gas in the second wall 352 becomes higher, thus more reliably confining the processed gas within the substrate support stage 210.

[0154] [Other implementation methods]

[0155] This disclosure is not limited to the embodiments described above, and various modifications can be made without departing from its spirit. The embodiments can be appropriately combined. The processing steps and conditions can, for example, be set to be the same as those in the first embodiment described above.

[0156] The above-described embodiments are also applicable to the formation of any one of the nitride film, oxide film, carbide film, or boride film containing elements such as hafnium (Hf), tantalum (Ta), tungsten (W), cobalt (Co), yttrium (Y), ruthenium (Ru), aluminum (Al), titanium (Ti), zirconium (Zr), molybdenum (Mo), and silicon (Si), or composite films thereof.

[0157] When forming a film containing the above-mentioned elements, gases containing hafnium (Hf), tantalum (Ta), tungsten (W), cobalt (Co), yttrium (Y), ruthenium (Ru), aluminum (Al), titanium (Ti), zirconium (Zr), molybdenum (Mo), and silicon (Si) can be used as raw material gases.

[0158] Furthermore, in the above embodiments, an example of using N2 gas as an inert gas is described, but it is not limited to this; rare gases such as Ar gas, He gas, Ne gas, and Xe gas may also be used.

[0159] The above-described embodiments, variations, and applications can be used in appropriate combinations. Furthermore, the processing conditions can be set to, for example, the same processing conditions as those described in the embodiments above.

[0160] Preferably, the process formulations (programs recording processing steps, processing conditions, etc.) used in the formation of these various thin films are prepared individually (multiple formulations are prepared) according to the content of the substrate processing (film type, composition ratio, film quality, film thickness, processing steps, processing conditions, etc.). Furthermore, it is preferable that when starting substrate processing, an appropriate process formulation is selected from multiple process formulations based on the content of the substrate processing. Specifically, it is preferable to pre-store (install) multiple process formulations individually prepared according to the content of the substrate processing in a storage device provided with the substrate processing apparatus via an electrical communication line or a storage medium (external storage device) storing the process formulations. Moreover, it is preferable that when starting substrate processing, the CPU provided with the substrate processing apparatus selects an appropriate process formulation from the multiple process formulations stored in the storage device based on the content of the substrate processing. With this configuration, films of various film types, composition ratios, film qualities, and film thicknesses can be formed in a single substrate processing apparatus with good versatility and reproducibility. In addition, the operator's workload (input burden of processing steps, processing conditions, etc.) can be reduced, and substrate processing can be started quickly while avoiding operational errors.

[0161] The aforementioned process formulation is not limited to newly created cases. For example, it can also be implemented by modifying the process formulation of an existing substrate processing apparatus. When modifying the process formulation, the process formulation disclosed herein can also be installed on an existing substrate processing apparatus via electrical communication lines or a storage medium storing the process formulation, or the process formulation itself can be modified into the process formulation disclosed herein by operating the input / output device of an existing substrate processing apparatus.

[0162] In the above embodiments, an example of film deposition using a processing furnace was described. This processing furnace is a single-piece substrate processing apparatus that processes one or more substrates at a time, and has a structure in which a nozzle for supplying processing gas is vertically arranged inside a reaction tube, and an exhaust port is provided at the bottom of the reaction tube. However, this disclosure is also applicable to cases where film deposition is performed using processing furnaces with other structures. For example, this disclosure is also applicable to cases where film deposition is performed using a processing furnace with the following structure: it has two reaction tubes with concentric circular cross-sections (the outer reaction tube is referred to as the outer tube, and the inner reaction tube as the inner tube), and processing gas flows from a nozzle vertically arranged inside the inner tube to the exhaust port, which opens on the side wall of the outer tube at a position opposite the nozzle (a position symmetrical to the substrate). Furthermore, the processing gas may not be supplied from the nozzle vertically arranged inside the inner tube, but from a gas supply port opening on the side wall of the inner tube. In this case, the exhaust port opening on the outer tube may also be based on the height of the multiple substrates stacked in the processing chamber. Furthermore, the shape of the exhaust port may also be a hole shape or a slit shape.

[0163] Furthermore, while the above embodiments described an example of forming thin films using a substrate processing apparatus with a cold-wall type furnace, this disclosure is not limited to this; it is also applicable to forming thin films using a substrate processing apparatus with a hot-wall type furnace. In these cases, the processing conditions can be set to, for example, the same processing conditions as in the embodiments described above.

[0164] This embodiment is applicable not only to semiconductor manufacturing apparatuses but also to apparatuses for processing glass substrates, such as LCD devices. Furthermore, the type of film is not particularly limited. For example, metal compounds (W, Ti, Hf, etc.) and silicon compounds (SiN, Si, etc.) can also be used. In addition, the film formation process includes, for example, CVD, PVD, processes for forming oxide films, nitride films, and processes for forming metal-containing films.

[0165] In addition, the description of "H2 gas + O2 gas" in this specification refers to a mixture of H2 gas and O2 gas. When supplying the mixed gas, the two gases can be mixed (premixed) in the supply pipe before being supplied to the processing chamber 201, or the two gases can be supplied to the processing chamber 201 separately from different supply pipes and mixed in the processing chamber 201 (postmixed).

[0166] Unless otherwise stated in the instruction manual, the elements are not limited to one and may exist in multiples.

[0167] In this specification, the program may also be a program stored on a computer-readable storage medium. Furthermore, the program may also be provided as a computer-readable storage medium storing the program.

Claims

1. A substrate processing apparatus, characterized in that, have: The processing chamber, which processes the substrate; The substrate support portion has a substrate support surface capable of supporting the substrate within the processing chamber; A first gas supply unit is capable of supplying processing gas to the processing chamber through a first gas supply port; The second gas supply unit is capable of supplying non-processed gas to the side of the substrate support unit through the second gas supply hole; The first wall is disposed horizontally between the substrate support and the second gas supply hole, and its upper end is disposed at a position higher than the upper end of the substrate support. A first exhaust flow path is disposed between the first wall and the substrate support portion; as well as The second exhaust flow path is located below the second gas supply hole.

2. The substrate processing apparatus according to claim 1, characterized in that, Multiple substrate support platforms are provided as substrate support parts. The combination of the first wall, the first exhaust flow path, and the second exhaust flow path is respectively provided corresponding to the substrate support platform.

3. The substrate processing apparatus according to claim 1 or 2, characterized in that, A second wall is also provided below the second gas supply hole and on the outside of the first wall in the horizontal direction, which forms the second exhaust flow path between the second wall and the first wall.

4. The substrate processing apparatus according to claim 3, characterized in that, The height of the upper end of the second wall is the same as or lower than the height of the upper end of the first wall.

5. The substrate processing apparatus according to claim 3, characterized in that, The upper end of the second wall is higher than the upper end of the first wall.

6. The substrate processing apparatus according to claim 1 or 2, characterized in that, The non-processed gas is an inert gas.

7. The substrate processing apparatus according to claim 1 or 2, characterized in that, The main components of the non-treated gas are the same as those of the treated gas.

8. The substrate processing apparatus according to claim 1 or 2, characterized in that, The inner side of the second gas supply hole is disposed in the second exhaust flow path.

9. The substrate processing apparatus according to claim 1 or 2, characterized in that, The first gas supply hole is located horizontally on the side of the substrate support surface that is closer to the second gas supply hole.

10. The substrate processing apparatus according to claim 1 or 2, characterized in that, It has a second processing gas supply unit, which is capable of supplying a second processing gas to the processing chamber through a first gas supply port.

11. The substrate processing apparatus according to claim 2, characterized in that, A partition member is provided between the plurality of substrate support platforms, which divides the processing chambers vertically above and below the height of the substrate support platforms.

12. The substrate processing apparatus according to claim 1 or 2, characterized in that, It also includes a control unit configured to control the first gas supply unit and the second gas supply unit in such a manner that the supply of the non-processed gas is started and then the supply of the processed gas is started.

13. The substrate processing apparatus according to claim 1 or 2, characterized in that, Upstream of the second exhaust flow path and upstream of the first exhaust flow path, the flow rate of the non-processed gas is higher than the flow rate of the processed gas.

14. The substrate processing apparatus according to claim 1 or 2, characterized in that, The width of the second exhaust flow path is greater than the width of the first exhaust flow path.

15. The substrate processing apparatus according to claim 1, characterized in that, A heater capable of heating the first exhaust flow path is provided.

16. The substrate processing apparatus according to claim 1, characterized in that, The first exhaust flow path is connected to the second exhaust flow path. A heater capable of heating the second exhaust flow path is provided.

17. The substrate processing apparatus according to claim 1, characterized in that, A third exhaust flow path is provided to connect the first exhaust flow path and the second exhaust flow path. A heater capable of heating the third exhaust flow path is provided.

18. A substrate processing method, characterized in that, have: The process of supporting a substrate on a substrate support surface provided in a substrate support section within a processing chamber; and The process involves supplying processing gas to the substrate via a first gas supply hole and supplying non-processing gas to the side of the substrate support via a second gas supply hole, while simultaneously discharging ambient gas from the processing chamber through a first exhaust flow path and a second exhaust flow path in the horizontal direction between the substrate support and the second gas supply hole. The first exhaust flow path is disposed between the substrate support and a first wall, with the upper end of the first wall positioned higher than the upper end of the substrate support. The second exhaust flow path is disposed below the second gas supply hole.

19. A method for manufacturing a semiconductor device, characterized in that, The substrate processing method as described in claim 18 is included.

20. A program, characterized in that, The following steps are performed by a computer using a substrate processing apparatus: The step of supporting the substrate on the substrate support surface of the substrate support portion provided in the processing chamber; and The step involves supplying processing gas to the substrate through a first gas supply hole and supplying non-processing gas to the side of the substrate support through a second gas supply hole, while simultaneously discharging ambient gas from the processing chamber through a first exhaust flow path and a second exhaust flow path in the horizontal direction between the substrate support and the second gas supply hole. The first exhaust flow path is disposed between the substrate support and a first wall, with the upper end of the first wall positioned higher than the upper end of the substrate support. The second exhaust flow path is disposed below the second gas supply hole.

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