Transformer arrangement and inverter device

Abstract

The transformer device and the transformer equipment provided by the embodiments of the present disclosure include: a first insulating substrate having a groove; a magnetic core is contained in the groove, and the groove is filled with a resin material; an upper conductive trace structure includes a second insulating substrate, a first side of the upper conductive trace structure is formed with an upper conductive trace, and the first side of the upper conductive trace structure is adhered to a first side of the first insulating substrate through a first adhesive layer; a lower conductive trace structure includes a third insulating substrate, a first side of the lower conductive trace structure is formed with a lower conductive trace, and the first side of the lower conductive trace structure is adhered to a second side of the first insulating substrate through a second adhesive layer; a first via structure penetrates through the upper conductive trace structure, the lower conductive trace structure and the first insulating substrate, and a conductive material is arranged on a sidewall of the first insulating substrate exposed due to formation of the first via structure to form a first conductive via structure.

Description

Technical Field

[0001] This invention relates to the field of embedded magnetic component devices and related technical fields, specifically to a transformer device and a converter device. Background Technology

[0002] Small transformer devices have a wide range of applications. For example, in power supply units (various converters), they often contain transformer windings and magnetic cores. These magnetic components usually have the greatest impact on the weight and size of the power supply unit, making miniaturization and cost reduction difficult.

[0003] In existing technology, after placing the magnetic component into a trench in an insulating substrate, an insulating layer is covered on one side of the slot and pressed together to form a cavity. After forming the cavity, through holes are formed around the inner and outer peripheries of the trench. These through holes are then electroplated to form conductive vias, thereby forming the winding portion of the transformer. Subsequently, insulating substrates for soldering devices or insulation are covered on both sides of the existing substrate, and the layers are pressed and drilled again to form the electrical connection between the internal transformer and the external electronic components. This manufacturing technology suffers from problems such as complex processes, large transformer unit size, and low PCB yield due to multiple pressing and drilling processes. Summary of the Invention

[0004] In view of this, the embodiments described herein provide a transformer device and converter apparatus to improve manufacturing efficiency, reduce manufacturing process complexity, improve product manufacturing yield, and reduce the overall size of the transformer device.

[0005] In a first aspect, according to the present disclosure, a transformer device is provided, comprising: A first insulating substrate has a first side and a second side opposite to the first side, and has a trench in the first insulating substrate, the trench having an inner periphery and an outer periphery; The magnetic core is housed in a trench and has a first section and a second section, and the trench is filled with resin material. The upper conductive trace structure includes a second insulating substrate, an upper conductive trace is formed on a first side of the upper conductive trace structure, and the first side of the upper conductive trace structure is bonded to the first side of the first insulating substrate through a first adhesive layer. A lower conductive trace structure, comprising a third insulating substrate, wherein a lower conductive trace is formed on a first side of the lower conductive trace structure, and the first side of the lower conductive trace structure is bonded to a second side of a first insulating substrate via a second adhesive layer; and The first conductive via structure includes an external conductive connector and an internal conductive connector, and the first conductive via structure is formed by distributing conductive material on the sidewall of the first insulating substrate exposed due to the formation of the first via structure, wherein the first via structure penetrates the upper conductive trace structure, the lower conductive trace structure and the first insulating substrate. The upper conductive trace, inner conductive connector, outer conductive connector, and lower conductive trace formed around the first section of the magnetic core form the primary winding of the transformer device, and the upper conductive trace, inner conductive connector, outer conductive connector, and lower conductive trace formed around the second section of the magnetic core form the secondary winding of the transformer device.

[0006] In some embodiments of this disclosure, the upper conductive trace structure further includes a first metal layer disposed on a first side of the second insulating substrate and a second metal layer disposed on a second side of the second insulating substrate, wherein the first metal layer is formed with the upper conductive trace. The lower conductive trace structure also includes a third metal layer disposed on a first side of the third insulating substrate and a fourth metal layer disposed on a second side of the third insulating substrate, wherein the lower conductive trace is formed on the third metal layer.

[0007] In some embodiments of this disclosure, the thickness of the first adhesive layer is the same as the thickness of the first metal layer, and the thickness of the second adhesive layer is the same as the thickness of the third metal layer.

[0008] In some embodiments of this disclosure, the thickness of the first adhesive layer is greater than the thickness of the first metal layer, or the thickness of the second adhesive layer is greater than the thickness of the third metal layer.

[0009] In some embodiments of this disclosure, a second metal layer is formed with top-layer traces, or a fourth metal layer is formed with top-layer traces.

[0010] In some embodiments of this disclosure, a second conductive via structure, a third conductive via structure, a winding start point lead-out region, and a winding end point lead-out region are also included. The top layer trace is electrically connected to the winding start point area through the second conductive via structure, and the top layer trace is electrically connected to the winding end point area through the third conductive via structure.

[0011] In some embodiments of this disclosure, the formation positions of the winding start point lead-out region and the winding end point lead-out region satisfy any one of the following conditions: The starting point of the winding is formed in the first metal layer, and the ending point of the winding is formed in the third metal layer. The starting point of the winding is formed in the first metal layer, and the ending point of the winding is formed in the first metal layer. The winding start point lead-out area is formed in the third metal layer, and the winding end point lead-out area is formed in the third metal layer; and The starting point of the winding is formed in the third metal layer, and the ending point of the winding is formed in the first metal layer.

[0012] In some embodiments of this disclosure, a first solid boundary between the sidewall exposed due to the formation of the first through-hole structure and the outer periphery of the trench of the first insulating substrate has a first thickness, and a second solid boundary between the sidewall exposed due to the formation of the first through-hole structure and the inner periphery of the trench of the first insulating substrate has a second thickness, wherein the first thickness and the second thickness satisfy any one of the following conditions: The first and second thicknesses are each in the range of 0.10 mm to 0.55 mm; The first and second thicknesses are each in the range of 0.60 mm to 2.00 mm; The first thickness is in the range of 0.60 mm to 2.00 mm, and the second thickness is in the range of 0.10 mm to 0.55 mm; and The first thickness is in the range of 0.10 mm to 0.55 mm, and the second thickness is in the range of 0.60 mm to 2.00 mm.

[0013] In some embodiments of this disclosure, a first plug structure and a second plug structure are also included; The first hole plug structure fills the area exposed by the conductive trace structure due to the formation of the first through hole structure; The second hole plug structure fills the area exposed by the formation of the first through-hole structure in the lower conductive trace structure.

[0014] Secondly, according to this disclosure, a converter device is provided, including any of the transformer devices described in the first aspect.

[0015] The transformer device and converter equipment provided in this disclosure have a first side of the upper conductive trace structure bonded to the first side of the first insulating substrate via a first adhesive layer, and a first side of the lower conductive trace structure bonded to the second side of the first insulating substrate via a second adhesive layer. By bonding the upper conductive trace structure, the first insulating substrate, and the lower conductive trace structure using the first and second adhesive layers, the fabrication process is simplified and fabrication efficiency is improved. Since the upper conductive trace structure, the first insulating substrate, and the lower conductive trace structure are bonded based on the first and second adhesive layers, there is no need to additionally fabricate a cover layer on the first side of the first insulating substrate, resulting in a reduction in the overall volume of the transformer device. Furthermore, the reduction in the number of layers in the transformer device can improve efficiency. The process improves the efficiency and reliability of forming the first through-hole structure. Furthermore, it only requires pressing the upper and lower conductive trace structures with the first insulating substrate, reducing the need for pressing the first insulating substrate. The first through-hole structure is formed on the upper and lower conductive trace structures and the first insulating substrate, thus reducing the product defect rate caused by multiple pressing and drilling. Additionally, by filling the groove containing the magnetic core with resin material, the resin material can both fix the magnetic core in the groove and provide insulation, further increasing the creepage distance. In other words, without changing the creepage distance, the thickness of the relevant area in the first insulating substrate can be further shortened, which is beneficial for transformer miniaturization.

[0016] The above description is merely an overview of the technical solutions of the embodiments of this application. In order to better understand the technical means of the embodiments of this application and to implement them in accordance with the contents of the specification, and to make the above and other objects, features and advantages of the embodiments of this application more obvious and understandable, specific implementation methods of this application are described below. Attached Figure Description

[0017] To more clearly illustrate the technical solutions of the embodiments of this disclosure, the accompanying drawings of the embodiments will be briefly described below. It should be understood that the drawings described below only relate to some embodiments of this disclosure and are not intended to limit this disclosure, wherein: Figure 1 This is a cross-sectional structural schematic diagram of a transformer device provided in an embodiment of this disclosure; Figure 2 This is a schematic cross-sectional view of the first insulating substrate provided in an embodiment of this disclosure; Figure 3 This is a top view of the first insulating substrate provided in an embodiment of this disclosure; Figure 4 This is a top view of the winding structure in a transformer device provided in this embodiment of the present disclosure; Figure 5This is a cross-sectional structural schematic diagram of another transformer device provided in an embodiment of this disclosure; Figure 6 This is a cross-sectional structural schematic diagram of another transformer device provided in the embodiments of this disclosure; Figure 7 This is a cross-sectional structural schematic diagram of another transformer device provided in the embodiments of this disclosure; Figure 8 This is a cross-sectional structural schematic diagram of another transformer device provided in the embodiments of this disclosure; Figure 9 This is a cross-sectional structural schematic diagram of another transformer device provided in the embodiments of this disclosure; Figure 10 This is a cross-sectional structural schematic diagram of another transformer device provided in the embodiments of this disclosure; Figure 11 This is a cross-sectional structural schematic diagram of another transformer device provided in the embodiments of this disclosure; Figure 12 This is a cross-sectional structural schematic diagram of another transformer device provided in the embodiments of this disclosure; Figure 13 This is a cross-sectional structural schematic diagram of another transformer device provided in the embodiments of this disclosure.

[0018] In the accompanying diagram, markers with the same last two digits correspond to the same elements. It should be noted that the elements in the diagram are schematic and not drawn to scale. Detailed Implementation

[0019] To make the objectives, technical solutions, and advantages of the embodiments of this disclosure clearer, the technical solutions of the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this disclosure. All other embodiments obtained by those skilled in the art based on the described embodiments of this disclosure without creative effort are also within the scope of protection of this disclosure.

[0020] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this subject matter pertains. It will be further understood that terms such as those defined in commonly used dictionaries shall be interpreted as having the meaning consistent with their meaning in the context of the specification and in the relevant art, and shall not be interpreted in an idealized or overly formal form unless otherwise explicitly defined herein. As used herein, the statement of “connecting” or “coupling” two or more parts together shall mean that these parts are directly joined together or joined through one or more intermediate components.

[0021] The term "embodiment" as used herein means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of the phrase "embodiment" in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0022] In this article, the terms "or" or "or" are merely a way of describing the relationship between related objects, indicating that there can be three kinds of relationships. For example, A or B can mean that only A exists, both A and B exist, or only B exists.

[0023] Furthermore, in all embodiments of this disclosure, terms such as “first” and “second” are used only to distinguish one component (or part of a component) from another component (or another part of a component).

[0024] In the description of this application, unless otherwise stated, "multiple" means two or more (including two), and similarly, "multiple groups" means two or more (including two groups).

[0025] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings.

[0026] In view of the problems existing in the prior art, the present disclosure provides a transformer device. Figure 1 This is a cross-sectional structural schematic diagram of a transformer device provided in an embodiment of this disclosure, as shown below. Figure 1As shown, the transformer device includes: a first insulating substrate 101, having a first side and a second side opposite to the first side, and having a trench 102 in the first insulating substrate 101, the trench 102 having an inner periphery and an outer periphery; a magnetic core 103, the magnetic core 103 being housed in the trench 102 and having a first section and a second section, and the trench 102 being filled with a resin material 104; an upper conductive trace structure 20, the upper conductive trace structure 20 including a second insulating substrate 201, an upper conductive trace 202 formed on a first side of the upper conductive trace structure 20, the first side of the upper conductive trace structure 20 being bonded to the first side of the first insulating substrate 101 by a first adhesive layer 401; and a lower conductive trace structure 30, the lower conductive trace structure 30 including a third insulating substrate 301, a lower conductive trace 302 formed on a first side of the lower conductive trace structure 30, the first side of the lower conductive trace structure 3 ... insulating substrate 301; and a lower conductive trace structure 30 including a third insulating substrate 301, the lower conductive trace structure 30 including a third insulating substrate 301, the lower conductive trace 302 being formed on a first side of the lower conductive trace structure 30 by a third insulating substrate 301; and a lower conductive trace structure 30 including a third insulating substrate 301, the lower conductive trace 30 being bonded to the first side of the first insulating substrate 101 by a third insulating substrate 301; and a The second adhesive layer 402 is bonded to the second side of the first insulating substrate 101; and the first conductive through-hole structure 411 includes an outer conductive connector 405 and an inner conductive connector 406, and the first conductive through-hole structure 411 is formed by arranging conductive material on the sidewall of the first insulating substrate 101 exposed due to the formation of the first through-hole structure 410, wherein the first through-hole structure 410 penetrates the upper conductive trace structure 20, the lower conductive trace structure 30 and the first insulating substrate 101; wherein the upper conductive trace 202, the inner conductive connector 406, the outer conductive connector 405 and the lower conductive trace 302 formed around the first section of the magnetic core 103 form the primary winding of the transformer device; the upper conductive trace 202, the inner conductive connector 406, the outer conductive connector 405 and the lower conductive trace 302 formed around the second section of the magnetic core 103 form the secondary winding of the transformer device.

[0027] In this example, the first insulating substrate 101 is formed of a resin material, such as FR4. FR4 is a composite "prepreg" material consisting of woven glass fiber cloth impregnated with an epoxy resin binder. The resin is pre-dried but not hardened, so that when heated, it flows and acts as a binder for the glass fiber material. FR4 has been found to have good thermal and insulating properties.

[0028] In this embodiment, the first insulating substrate 101 has an annular groove 102 for accommodating the magnetic core 103. The groove 102 can be slightly larger than the magnetic core 103, allowing an air gap to exist around the magnetic core 103. The magnetic core 103 can be installed in the groove 102 manually or by a surface mounting device (e.g., a pick-and-place machine). After the magnetic core 103 is installed in the groove 102, the groove 102 is filled with resin material 104. The resin material 104 is cured by a curing process, so that the surface of the groove 102 is flush with the first side of the first insulating substrate 101. On the one hand, the filled resin material 104 can fix the magnetic core 103 in the groove; on the other hand, the filled resin material can play an insulating role, thereby further increasing the creepage distance. In other words, without changing the creepage distance, the thickness of the relevant area in the first insulating substrate 101 can be further shortened (see the description of the first thickness D1 and the second thickness D2 below), which is beneficial for transformer miniaturization.

[0029] Specifically, such as Figure 2 and Figure 3 As shown, region AA is the first section of trench 102, and region BB is the second section of trench.

[0030] As a preferred implementation, other materials can be added to the filled resin material 104 to improve the curing performance of the resin material, and the improved curing performance of the resin material can further improve the mechanical strength of the transformer device.

[0031] Furthermore, by filling the trench 102 with resin material 104, the surface of the trench 102 is flush with the first side of the first insulating substrate 101, which can improve the acceptable pressing strength of the first side of the first insulating substrate. In the subsequent pressing process of pressing the first side of the upper conductive trace structure 20 with the first side of the first insulating substrate 101 and pressing the first side of the lower conductive trace structure 30 with the second side of the first insulating substrate 101, the device loss caused by pressing failure is reduced.

[0032] The transformer device provided in this embodiment presses the upper conductive trace structure 20 and the lower conductive trace structure 30 onto the first insulating substrate 101 using a pressing process. Before pressing the upper conductive trace structure 20 and the lower conductive trace structure 30 onto the first insulating substrate 101, an upper conductive trace 202 is first formed on the first side of the upper conductive trace structure 20, and a lower conductive trace 302 is first formed on the first side of the lower conductive trace structure 30. The upper conductive trace 202 and the lower conductive trace 302 serve as windings for subsequent connection of the inner conductive connector and the outer conductive connector.

[0033] Specifically, the upper conductive trace structure 20 is bonded to the first side of the first insulating substrate 101 through the first adhesive layer 401, and the lower conductive trace structure 30 is bonded to the second side of the first insulating substrate 101 through the second adhesive layer 402.

[0034] By forming a first adhesive layer 401 on the first side of the upper conductive trace structure 20, the first adhesive layer 401 serves two purposes: firstly, it acts as an adhesive to bond the upper conductive trace structure 20 to the first side of the first insulating substrate 101; secondly, it fills the area on the first side of the upper conductive trace structure 20 where the upper conductive trace 202 is not formed, thereby ensuring that there are no air gaps in the contact area between the upper conductive trace structure 20 and the first side of the first insulating substrate 101. Similarly, by forming a second adhesive layer 402 on the first side of the lower conductive trace structure 30, the second adhesive layer 402 serves two purposes: firstly, it acts as an adhesive to bond the lower conductive trace structure 30 to the second side of the first insulating substrate 101; secondly, it fills the area on the first side of the lower conductive trace structure 30 where the lower conductive trace 302 is not formed, thereby ensuring that there are no air gaps in the contact area between the lower conductive trace structure 30 and the second side of the first insulating substrate 101.

[0035] It should be understood that if air gaps exist in the transformer assembly, such as air gaps above or below the transformer windings formed based on the upper and lower conductive trace structures, there is a risk of arcing and failure of the assembly. By pressing the upper conductive trace structure 20 and the first side of the first insulating substrate 101 together based on the first adhesive layer 401, and pressing the lower conductive trace structure 30 and the second side of the first insulating substrate 101 together based on the second adhesive layer 402, there can be no air gaps in the contact areas of the upper conductive trace structure 20, the first insulating substrate 101, and the lower conductive trace structure 30, thereby avoiding the risk of arcing and failure after the transformer assembly is manufactured.

[0036] Figure 1For example, the thickness of the first adhesive layer 401 is the same as the thickness of the first metal layer corresponding to the upper conductive trace 202, and the thickness of the second adhesive layer 402 is the same as the thickness of the third metal layer corresponding to the lower conductive trace 302. As a preferred implementation, the thickness of the first adhesive layer 401 can be set to be greater than the thickness of the first metal layer corresponding to the upper conductive trace 202, and the thickness of the second adhesive layer 402 can be greater than the thickness of the third metal layer corresponding to the lower conductive trace 302. By setting the thickness of the first adhesive layer 401 to be greater than the thickness of the first metal layer corresponding to the upper conductive trace 202, and the thickness of the second adhesive layer 402 to be greater than the thickness of the third metal layer corresponding to the lower conductive trace 302, the firmness of the bonding between the upper conductive trace structure 20 and the first insulating substrate 101 on the first side, as well as the firmness of the bonding between the lower conductive trace structure 30 and the first insulating substrate 101 on the second side, can be better guaranteed.

[0037] It should be noted that, under the premise of achieving adhesion between related structures to avoid related electric arc or failure risks, the specific thickness of the first adhesive layer 401 and the second adhesive layer 402 formed may depend on the safety certification standards required for the transformer device and the expected operating conditions, and this disclosure does not specifically limit this.

[0038] In this embodiment, by setting a first conductive through-hole structure 411, which includes an outer conductive connector 405 and an inner conductive connector 406, the upper conductive trace 202 and the lower conductive trace 302 are electrically connected through the outer conductive connector 405 and the inner conductive connector 406, thereby forming the winding of the voltage transformer device.

[0039] Specifically, the first conductive via structure 411 is formed by distributing conductive material on the sidewall of the first insulating substrate 101 exposed due to the formation of the first via structure 410. The first via structure 410 penetrates the upper conductive trace structure 20, the lower conductive trace structure 30 and the first insulating substrate 101.

[0040] The specific implementation process of forming the first conductive through-hole structure 411 includes: forming the first through-hole structure 410 on the upper conductive trace structure 20, the lower conductive trace structure 30 and the first insulating substrate 101; forming a metal material or setting a conductive tube on the sidewall of the first insulating substrate 101 exposed due to the formation of the first through-hole structure 410, so as to form the first conductive through-hole structure 411.

[0041] The specific implementation process of forming metal material on the sidewalls exposed by the formation of the first through-hole structure on the first insulating substrate 101 includes: forming metal material on the sidewalls exposed by the formation of the first through-hole structure 410 on the first insulating substrate 101, the second insulating substrate 201 and the third insulating substrate 301, and etching the metal material on the sidewalls exposed by the formation of the first through-hole structure 410 on the second insulating substrate 201 and the third insulating substrate 301 to form the first conductive through-hole structure 411 based on an etching process.

[0042] The process of forming a metallic material on the sidewalls of the first insulating substrate 101 exposed due to the formation of the first through-hole structure 410 can be based on an electroplating process or on other processes for forming metallic materials on the sidewalls (e.g., magnetron sputtering). This disclosure does not specifically limit the process.

[0043] also, Figure 1 In this embodiment, the first conductive via structure 411 (which connects the upper conductive trace and the lower conductive trace) is formed by forming a metallic material on the sidewall of the first insulating substrate 101 exposed due to the formation of the first via structure 410. However, it should be understood that in alternative embodiments, the first conductive via structure 411 may be formed using other conductive connection structures, such as a conductive tube (which may be hollow or solid), in which case the conductive tube may be inserted into the first via structure to electrically connect the upper conductive trace and the lower conductive trace. The conductive tube may be a metal tube or other conductive non-metallic tube. The metal tube may be pre-formed and fixed (e.g., by interference fit or adhesive) to the sidewall of the first insulating substrate exposed due to the formation of the first via structure.

[0044] It should be noted that, in the above embodiments, the position of the first through-hole structure 410 can be determined based on the position of the upper conductive trace 202 of the upper conductive trace structure 20 or the position of the lower conductive trace 302 of the lower conductive trace structure 30.

[0045] The process of forming the first through-hole structure 410 on the upper conductive trace structure 20, the lower conductive trace structure 30 and the first insulating substrate 101 can be based on mechanical drilling technology.

[0046] Now refer to Figure 1 and Figure 4 The connection method between the upper conductive trace 202 and the lower conductive trace 302, which constitute the windings of the transformer unit, and the inner conductive connector 406 and the outer conductive connector 405 is described in more detail. The primary winding of the transformer unit is shown on the left side of the unit, while the secondary winding of the transformer unit is shown on the right side. Figure 4 The input and output connections to the transformer windings are also omitted to avoid obscuring details.

[0047] The primary winding of the transformer includes an external conductive connector 405 arranged around the outer periphery of an annular groove 102 containing a magnetic core 103. As shown here, the external conductive connector 405 is arranged in an arc along the outer periphery or outer edge of the groove 102. An internal conductive connector 406 is disposed in the internal central region and is arranged in an arc along the inner periphery or inner edge of the groove 102.

[0048] The secondary winding of the transformer also includes external conductive connectors and internal conductive connectors that are connected to each other in the same manner as the primary winding via corresponding upper and lower conductive traces.

[0049] Furthermore, despite Figure 4 The diagram illustrates a transformer assembly with one set of primary and one set of secondary windings. Those skilled in the art will understand that the number of winding sets in the transformer assembly can be flexibly configured as needed. For example, the primary winding can have one set, while the secondary winding can have two sets, thus forming a one-to-two transformer assembly. Similarly, windings can be grouped to form other structures such as two-to-two or one-to-three transformer assemblies. Exemplarily, one or more auxiliary transformer windings can be formed using a first conductive via structure, an upper conductive trace, and a lower conductive trace.

[0050] In addition, although Figure 4 The example illustrates that the internal conductive connectors corresponding to the primary and secondary windings are uniformly arranged along the inner arc of the trench, while the external conductive connectors are uniformly arranged along the outer arc of the trench. Those skilled in the art will understand that the internal conductive connectors corresponding to one or both of the primary and secondary windings, or the external conductive connectors corresponding to one or both of the primary and secondary windings, can be non-uniformly arranged along the inner or outer arc of the trench. As an example, the internal conductive connectors corresponding to one or both of the primary and secondary windings can be arranged non-uniformly along the inner arc of the trench. Exemplarily, some or all of the internal conductive connectors corresponding to one or both of the primary and secondary windings can be distributed in a curved (e.g., sine, Gaussian) or straight line along the inner arc of the trench. A straight line distribution may be particularly advantageous because they are arranged in a vertical row, further away from the trench, making drilling easier.

[0051] The transformer device provided in this embodiment has a first side of the upper conductive trace structure bonded to a first side of the first insulating substrate via a first adhesive layer, and a first side of the lower conductive trace structure bonded to a second side of the first insulating substrate via a second adhesive layer. By bonding the upper conductive trace structure, the first insulating substrate, and the lower conductive trace structure using the first and second adhesive layers, the fabrication process is simplified and fabrication efficiency is improved. Since the upper conductive trace structure, the first insulating substrate, and the lower conductive trace structure are bonded based on the first and second adhesive layers, there is no need to additionally fabricate a cover layer on the first side of the first insulating substrate, resulting in a reduction in the overall volume of the transformer device and a reduction in the number of layers. The small size improves the efficiency and reliability of forming the first through-hole structure. Furthermore, it only requires pressing the upper and lower conductive trace structures with the first insulating substrate, reducing the pressing process. The first through-hole structure is formed on the upper and lower conductive trace structures and the first insulating substrate, thus reducing the product defect rate caused by multiple pressing and drilling. By filling the grooves containing the magnetic core with resin material, the resin material can fix the magnetic core in the grooves and also act as insulation, further increasing the creepage distance. In other words, without changing the creepage distance, the thickness of the relevant area in the first insulating substrate can be further shortened, which is beneficial for transformer miniaturization.

[0052] Based on the above embodiments, see below. Figure 1 The upper conductive trace structure 20 also includes a first metal layer disposed on the first side of the second insulating substrate 201. Figure 1 The first metal layer has been processed to form an upper conductive trace 202, and a second metal layer 205 is disposed on the second side of the second insulating substrate. The first metal layer has the upper conductive trace 202 formed thereon. The lower conductive trace structure 30 also includes a third metal layer disposed on the first side of the third insulating substrate 301. Figure 1 The third metal layer has been processed to form a lower conductive trace 302 and a fourth metal layer 305 disposed on the second side of the third insulating substrate 301. The lower conductive trace 302 is formed on the third metal layer.

[0053] By directly forming the upper conductive trace 202 on the first side of the second insulating substrate 201, the upper conductive trace structure 20 with the upper conductive trace 202 formed can be directly pressed onto the first insulating substrate 101. Compared with the prior art, after the magnetic component is placed into the groove of the insulating substrate, an insulating layer needs to be covered on one side of the slot of the insulating substrate, and then conductive or metallic traces are added to the top surface of the insulating layer. This reduces the overall volume of the transformer device and reduces the pressing process on the first insulating substrate 101.

[0054] Similarly, by directly forming the lower conductive trace 302 on the first side of the third insulating substrate 301, the lower conductive trace structure 30 with the lower conductive trace 302 formed can be directly pressed onto the first insulating substrate 101, reducing the overall volume of the transformer device and reducing the pressing process on the first insulating substrate 101.

[0055] Specifically, a process for fabricating an upper conductive trace structure and a lower conductive trace structure includes: fabricating a second insulating substrate and a third insulating substrate; fabricating a first metal layer and a second metal layer on a first side and a second side of the second insulating substrate, respectively; fabricating a third metal layer and a fourth metal layer on a first side and a second side of the third insulating substrate, respectively; processing the first metal layer to form an upper conductive trace; and processing the third metal layer to form a lower conductive trace.

[0056] Taking the fabrication of the upper conductive trace structure as an example, a second insulating substrate 201 is first fabricated. Then, a first metal layer (not shown in the figure) is deposited on the first side of the second insulating substrate 201. A second metal layer 205 is deposited on the second side of the second insulating substrate 201. A mask layer is then formed on the first metal layer. Finally, the first metal layer is etched by an etching process to form the pattern corresponding to the upper conductive trace 202.

[0057] In this embodiment, a first metal layer is first deposited on the first side of the second insulating substrate 201, and then the first metal layer is etched by a mask etching process to form an upper conductive trace structure. Compared with forming the upper conductive trace 202 first and then transferring it to the second insulating substrate 201, this mask etching process can avoid accidental damage to the upper conductive trace 202 during the transfer process.

[0058] Specifically, another process for fabricating the upper conductive trace structure and the lower conductive trace structure includes: fabricating a second insulating substrate and a third insulating substrate; forming a first metal layer having an upper conductive trace pattern on a first side of the second insulating substrate, and forming a third metal layer having a lower conductive trace pattern on a first side of the third insulating substrate; fabricating a second metal layer on a second side of the second insulating substrate, and fabricating a fourth metal layer on a second side of the third insulating substrate.

[0059] In this implementation, a second insulating substrate 201 is first fabricated. Then, a first metal layer with an upper conductive trace pattern is directly formed on the first side of the second insulating substrate 201 by deposition. Finally, a second metal layer 205 is fabricated on the second side of the second insulating substrate 201. In this implementation, the prepared first metal layer with an upper conductive trace pattern is directly formed on the first side of the second insulating substrate 201, eliminating the need for a mask etching process, thereby improving fabrication efficiency.

[0060] The process for fabricating the lower conductive trace structure can be the same as or different from the process for fabricating the upper conductive trace structure. For example, the mask etching process described above regarding the fabrication process of the upper conductive trace structure can be used to fabricate the lower conductive trace structure; alternatively, the maskless etching process described above regarding the fabrication process of the upper conductive trace structure can be used to fabricate the lower conductive trace structure.

[0061] Based on the above embodiments, Figure 5 This is a schematic diagram of another transformer device provided in an embodiment of this disclosure, as shown below. Figure 5 As shown, the second metal layer has a top layer trace 203, and the fourth metal layer has a top layer trace 303.

[0062] The transformer device needs to reserve wiring for electrical connection with external electronic devices. Therefore, by forming a top layer wiring 203 in the second metal layer or a top layer wiring 303 in the fourth metal layer, the external electronic devices are electrically connected to the transformer device through the top layer wiring 203 formed in the second metal layer and / or the top layer wiring 303 formed in the fourth metal layer.

[0063] The process of forming the top layer trace 203 on the second insulating substrate 201 and the top layer trace 303 on the third insulating substrate 301 is the same as the process of forming the upper conductive trace and the lower conductive trace described above. This embodiment will not provide specific examples of this process.

[0064] It should be noted that, Figure 5 The example shows a second metal layer with a top layer trace 203 and a fourth metal layer with a top layer trace 303. Electronic devices 501 and 502 are mounted on the top layer trace 203 formed on the second metal layer, and electronic devices 503 and 504 are mounted on the top layer trace 303 formed on the fourth metal layer. In other implementations, the top layer trace 203 may only be formed on the second metal layer, such as... Figure 6 As shown, at this time, the electronic device is mounted on the top layer trace 203 formed by the second metal layer, or the top layer trace 303 is formed only on the fourth metal layer. In this case, the electronic device is mounted on the top layer trace 303 formed by the fourth metal layer. This embodiment does not specifically limit this.

[0065] As one implementation method, such as Figure 7 As shown, the top layer trace 203 is formed only on the second metal layer, and electronic devices 501 and 502 are mounted on the top layer trace 203. At this time, a power receiving device 100 (e.g., various types of controlled transistors) can be installed on the second side of the lower conductive trace structure, and a transformer device supplies power (e.g., drive voltage) to the power receiving device 100.

[0066] Electronic devices may include, for example, one or more resistors, capacitors, switching devices (e.g., transistors), integrated circuits, and operational amplifiers, etc., and the embodiments disclosed herein do not specifically limit them.

[0067] Based on the above embodiments, such as Figure 8- Figure 11 As shown, the transformer device also includes a second conductive through-hole structure 601, a third conductive through-hole structure 602, a winding start point lead-out area 603, and a winding end point lead-out area 604. The top layer wiring is electrically connected to the winding start point lead-out area 603 through the second conductive through-hole structure 601, and the top layer wiring is electrically connected to the winding end point lead-out area 604 through the third conductive through-hole structure 602.

[0068] The formation positions of the winding start-up region and the winding end-up region satisfy any one of the following conditions: the winding start-up region 603 is formed in the first metal layer and the winding end-up region 604 is formed in the third metal layer; the winding start-up region 603 is formed in the first metal layer and the winding end-up region 604 is formed in the first metal layer; the winding start-up region 603 is formed in the third metal layer and the winding end-up region 604 is formed in the first metal layer; and the winding start-up region 603 is formed in the third metal layer and the winding end-up region 604 is formed in the third metal layer.

[0069] The winding start point lead-out area is the conductive area led out from the starting trace of the primary or secondary winding of the transformer device, and the winding end point lead-out area is the conductive area led out from the end trace of the primary or secondary winding of the transformer device.

[0070] To achieve electrical connection between electronic devices mounted on the surface of the transformer and the windings of the transformer, a second conductive via structure 601 and a third conductive via structure 602 are formed. The top trace 203 formed in the second metal layer or the top trace 303 formed in the fourth metal layer is electrically connected to the winding start point lead-out area 603 through the second conductive via structure 601, thereby enabling the electronic devices to be connected to the lead-out point of the primary or secondary winding of the transformer. The top trace 203 formed in the second metal layer or the top trace 303 formed in the fourth metal layer is electrically connected to the winding end point lead-out area 604 through the third conductive via structure 602, thereby enabling the electronic devices to be connected to the lead-out point of the primary or secondary winding of the transformer.

[0071] Specifically, electronic devices mounted on the surface of the transformer device can be electrically connected to the winding start point lead-out area 603 through the second conductive through-hole structure 601, thereby connecting the electronic devices to the start point of the primary winding or secondary winding of the transformer device. Electronic devices mounted on the surface of the transformer device can be electrically connected to the winding end point lead-out area 604 through the third conductive through-hole structure 602, thereby connecting the electronic devices to the end point of the primary winding or secondary winding of the transformer device.

[0072] As a specific embodiment, such as Figure 8 As shown, a top layer trace 203 is formed in the second metal layer, a winding start point lead-out region 603 is formed in the first metal layer, and a winding end point lead-out region 604 is formed in the third metal layer. At this time, conductive material is arranged on the sidewall of the second insulating substrate 201 exposed due to the formation of the second through-hole structure 611 to form a second conductive through-hole structure 601. The top layer trace 203 is electrically connected to the winding start point lead-out region 603 through the second conductive through-hole structure 601. Conductive material is arranged on the sidewall of the first insulating substrate 101 and the second insulating substrate 201 exposed due to the formation of the third through-hole structure 612 to form a third conductive through-hole structure 602. The top layer trace 203 is electrically connected to the winding end point lead-out region 604 through the third conductive through-hole structure 602.

[0073] As another specific embodiment, such as Figure 9 As shown, a top layer trace 203 is formed in the second metal layer, a winding start point lead-out region 603 is formed in the first metal layer, and a winding end point lead-out region 604 is formed in the first metal layer. At this time, conductive material is arranged on the sidewall of the second insulating substrate 201 exposed due to the formation of the second through-hole structure 611 to form a second conductive through-hole structure 601. The top layer trace 203 is electrically connected to the winding start point lead-out region 603 through the second conductive through-hole structure 601. Conductive material is arranged on the sidewall of the second insulating substrate 201 exposed due to the formation of the third through-hole structure 612 to form a third conductive through-hole structure 602. The top layer trace 203 is electrically connected to the winding end point lead-out region 604 through the third conductive through-hole structure 602.

[0074] As another specific embodiment, such as Figure 10As shown, a top layer trace 203 is formed in the second metal layer, a winding start point lead-out region 603 is formed in the third metal layer, and a winding end point lead-out region 604 is formed in the first metal layer. At this time, conductive material is arranged on the sidewalls of the first insulating substrate 101 and the second insulating substrate 201 exposed by the formation of the second through-hole structure 611 to form a second conductive through-hole structure 601. The top layer trace 203 is electrically connected to the winding start point lead-out region 603 through the second conductive through-hole structure 601. Conductive material is arranged on the sidewalls of the second insulating substrate 201 exposed by the formation of the third through-hole structure 612 to form a third conductive through-hole structure 602. The top layer trace 203 is electrically connected to the winding end point lead-out region 604 through the third conductive through-hole structure 602.

[0075] As another specific embodiment, such as Figure 11 As shown, a top layer trace 203 is formed in the second metal layer, a winding start point lead-out region 603 is formed in the third metal layer, and a winding end point lead-out region 604 is formed in the third metal layer. At this time, conductive material is arranged on the sidewalls of the first insulating substrate 101 and the second insulating substrate 201 exposed by the formation of the second through-hole structure 611 to form a second conductive through-hole structure 601. The top layer trace 203 is electrically connected to the winding start point lead-out region 603 through the second conductive through-hole structure 601. Conductive material is arranged on the sidewalls of the first insulating substrate 101 and the second insulating substrate 201 exposed by the formation of the third through-hole structure 612 to form a third conductive through-hole structure 602. The top layer trace 203 is electrically connected to the winding end point lead-out region 604 through the third conductive through-hole structure 602.

[0076] The above embodiments exemplify the positions where the second conductive via structure 601 and the third conductive via structure 602 are formed, in the scenario where the second metal layer has a top layer trace 203, i.e., when the electronic device is mounted on the second side of the second insulating substrate 201, the winding start point lead-out area 603 is formed in the first metal layer or the third metal layer, and the winding end point lead-out area 604 is formed in the first metal layer or the third metal layer. When a top layer trace is formed in the fourth metal layer, i.e., when the electronic device is mounted on the second side of the third insulating substrate, the arrangement of the winding start point lead-out area and the winding end point lead-out area is the same as that when a top layer trace is formed in the second metal layer. The difference is that, in the process of forming the second conductive via structure and the third conductive via structure, the process of arranging conductive material on the sidewalls exposed by the formation of the second via structure and the third via structure in the second insulating substrate is changed to arranging conductive material on the sidewalls exposed by the formation of the second via structure and the third via structure in the third insulating substrate. The specific implementation method is not specifically illustrated in this embodiment.

[0077] Furthermore, it should be noted that in the above embodiments, the second through-hole structure 611 and the third through-hole structure 612 are the same as the first through-hole structure, which are through holes penetrating the upper conductive trace structure 20, the lower conductive trace structure 30 and the first insulating substrate 101. They are implemented based on mechanical drilling technology. Then, by arranging conductive material on the sidewalls at the corresponding positions of the second through-hole structure 611 and the third through-hole structure 612, the second conductive through-hole structure 601 and the third conductive through-hole structure 602 are formed. The conductive material can be a metal material or a conductive tube. This disclosure does not specifically limit this.

[0078] Furthermore, it should be noted that during the formation of the top layer trace 203 on the second metal layer and the formation of the top layer trace 303 on the fourth metal layer, the top layer trace is formed in the appropriate location of the desired circuit structure of the device. Electronic components can then be surface-mounted onto the top layer trace 203 and the top layer trace 303, and fixed in place, for example, by reflow soldering.

[0079] It should be noted that, in addition to the top layer trace 203, the second side of the upper conductive trace structure also includes electrical connection pads, etc., and the second side of the lower conductive trace structure also includes electrical connection pads, etc., in addition to the top layer trace 303. This disclosure does not specifically limit this aspect.

[0080] Based on the above embodiments, such as Figure 12 As shown, the transformer device also includes a first plug structure 701 and a second plug structure 702; the first plug structure 701 fills the area of ​​the upper conductive trace structure 20 exposed due to the formation of the first through-hole structure; the second plug structure 702 fills the area of ​​the lower conductive trace structure 30 exposed due to the formation of the first through-hole structure.

[0081] The flatness of the upper conductive trace structure is ensured by filling the area exposed by the formation of the first through-hole structure in the upper conductive trace structure 20 with a first hole plug structure 701, and the flatness of the lower conductive trace structure is ensured by filling the area exposed by the formation of the first through-hole structure in the lower conductive trace structure 30 with a second hole plug structure 702.

[0082] Preferably, the materials of the first hole plug structure 701 and the second hole plug structure 702 are the same as the materials of the second insulating substrate and the third insulating substrate.

[0083] Furthermore, as a preferred implementation method, such as Figure 13As shown, when the transformer device formed includes not only the first through-hole structure, but also the second through-hole structure 611 and the third through-hole structure 612, the first hole plug structure 701 can be filled in the area of ​​the upper conductive trace structure 20 where conductive material is not formed due to the formation of the second and third conductive through-hole structures, thereby ensuring the flatness of the upper conductive trace structure. Alternatively, the second hole plug structure 702 can be filled in the area of ​​the lower conductive trace structure 30 where conductive material is not formed due to the formation of the second and third conductive through-hole structures, thereby ensuring the flatness of the lower conductive trace structure.

[0084] In the above embodiments, the first solid boundary between the sidewall exposed due to the formation of the first through-hole structure of the first insulating substrate 101 and the outer periphery of the trench 102 has a first thickness D1, and the second solid boundary between the sidewall exposed due to the formation of the first through-hole structure of the first insulating substrate 101 and the inner periphery of the trench 102 has a second thickness D2, wherein the first thickness D1 and the second thickness D2 satisfy any of the following conditions: the first thickness D1 and the second thickness D2 are respectively in the range of 0.10 mm to 0.55 mm; the first thickness D1 and the second thickness D2 are respectively in the range of 0.60 mm to 2.00 mm; the first thickness D1 is in the range of 0.60 mm to 2.00 mm, and the second thickness D2 is in the range of 0.10 mm to 0.55 mm; and the first thickness D1 is in the range of 0.10 mm to 0.55 mm, and the second thickness D2 is in the range of 0.60 mm to 2.00 mm.

[0085] Specifically, such as Figure 1 As shown, the first thickness of the first solid boundary between the sidewall exposed due to the formation of the first through-hole structure of the first insulating substrate 101 and the outer periphery of the trench 102 is D1, and the second thickness of the second solid boundary between the sidewall exposed due to the formation of the first through-hole structure of the first insulating substrate 101 and the inner periphery of the trench 102 is D2.

[0086] In the above embodiments, the first through-hole structure is formed based on mechanical drilling technology. When the first through-hole structure is formed on the upper conductive trace structure 20, the first insulating substrate 101 and the lower conductive trace structure 30 based on mechanical drilling technology, various combinations of the first thickness D1 and the second thickness D2 can be formed. This embodiment does not specifically limit this, as long as the formed first conductive through-hole structure is insulated from the magnetic core 103 disposed in the trench 102 and no arc breakdown occurs between the transformer windings.

[0087] In the above embodiments, the first metal layer, the second metal layer, the third metal layer, and the fourth metal layer, as well as the metal material formed on the sidewall of the first insulating substrate, are generally copper, but may also be other conductive metal materials. The conductive metal materials that make them up may be the same or different, and this disclosure does not specifically limit them.

[0088] In the above examples, the first insulating substrate 101, the second insulating substrate 201, and the third insulating substrate 301 are made of FR4, but may include any suitable PCB laminate material having sufficient dielectric strength to provide the required insulation (non-limiting examples include FR4-08, G11, and FR5), and their constituent materials may be the same or different.

[0089] It should be noted that the thickness of the first insulating substrate can be flexibly set according to the core size, and this disclosure does not impose any limitations on it. In practice, the core material and size can be determined based on the transformer's electrical parameters and performance indicators, thereby determining the thickness of the first insulating substrate. The thicknesses of the second and third insulating substrates can be between 0.1 and 1.0 mm (e.g., 0.1 mm, 0.2 mm, 0.4 mm), and the thicknesses of the second and third insulating substrates can be the same or different.

[0090] In addition to the insulating properties of the materials themselves, the first adhesive layer 401 must bond well to the first side of the first insulating substrate 101 and the first side of the second insulating substrate 201 to form a tight bond, and the second adhesive layer 402 must bond well to the second side of the first insulating substrate 101 and the first side of the third insulating substrate 301 to form a tight bond. The term "tight bond" refers to a tight, consistent bond or joint between two materials that should maintain its integrity after relevant environmental conditions, such as high or low temperatures, thermal shock, and humidity. Any materials chosen also need to have good thermal cycling properties to prevent cracking during use and are preferably hydrophobic so that water does not affect the performance of the device.

[0091] In the above embodiments, the first insulating substrate 101, the second insulating substrate 201 and the third insulating substrate 301 may be formed of other insulating materials (e.g., ceramics, thermoplastics and epoxy resins).

[0092] The magnetic core 103 is preferably a ferrite core because it provides the required inductance for the device. In alternative embodiments, other types of magnetic materials are also possible. While the core is toroidal in the example above, it can have different shapes in other embodiments. Non-limiting examples include elliptical or elongated toroidal shapes, toroidal shapes with gaps, and core shapes such as EE, EI, I, EFD, EP, UI, and UR. Accordingly, the groove 102 has a shape that matches the magnetic core 103 to accommodate it. The circular or toroidal core in this example can reduce the failure rate of the device during manufacturing. The core can be coated with an insulating material to reduce the likelihood of breakdown between the core and the first conductive via structure or conductive trace. The edges of the core can be chamfered to form rounded or beveled edges, thereby improving structural reliability and insulation safety. Exemplarily, a square toroidal core can have chamfered edges, thereby forming rounded or beveled corners, reducing stress concentration and preventing tip discharge.

[0093] Based on the above embodiments, this disclosure also provides a converter device, including the transformer device described in any of the above embodiments, and having the beneficial effects of any of the above embodiments. Exemplarily, the converter device may be a DC-DC converter, a DC-AC inverter, an AC-DC rectifier, or an AC-AC frequency converter. Furthermore, the converter device can be applied to, but is not limited to, the following scenarios: server power supplies, communication power supplies, industrial drive systems, vehicle power supplies, photovoltaic inverters, energy storage converters, uninterruptible power supplies (UPS), data center power modules, and various power electronic devices with high power density and high isolation requirements.

[0094] Unless otherwise expressly indicated by the context, the singular form of words used herein and in the appended claims includes the plural form, and vice versa. Thus, when referring to the singular, the plural form of the corresponding term is generally included. Similarly, the terms “comprising” and “including” shall be interpreted as including rather than exclusively. Likewise, the terms “including” and “or” shall be interpreted as including unless such interpretation is expressly prohibited herein. Where the term “example” is used herein, particularly when it follows a set of terms, the “example” is merely exemplary and illustrative and should not be considered exclusive or extensive.

[0095] Further aspects and scope of adaptation become apparent from the description provided herein. It should be understood that various aspects of this application may be implemented individually or in combination with one or more other aspects. It should also be understood that the descriptions and specific embodiments herein are for illustrative purposes only and are not intended to limit the scope of this application.

[0096] Several embodiments of this disclosure have been described in detail above. However, it is obvious that those skilled in the art can make various modifications and variations to the embodiments of this disclosure without departing from the spirit and scope of this disclosure. The scope of protection of this disclosure is defined by the appended claims.

Claims

1. A transformer device, characterized in that, include: A first insulating substrate has a first side and a second side opposite to the first side, and has a trench in the first insulating substrate, the trench having an inner periphery and an outer periphery; A magnetic core, the magnetic core being housed in a trench and having a first section and a second section, the trench being filled with a resin material; An upper conductive trace structure includes a second insulating substrate, an upper conductive trace is formed on a first side of the upper conductive trace structure, and the first side of the upper conductive trace structure is bonded to a first side of the first insulating substrate through a first adhesive layer. A lower conductive trace structure, the lower conductive trace structure including a third insulating substrate, a lower conductive trace formed on a first side of the lower conductive trace structure, and the first side of the lower conductive trace structure being bonded to a second side of the first insulating substrate through a second adhesive layer; as well as A first conductive via structure, comprising an external conductive connector and an internal conductive connector, wherein the first conductive via structure is formed by distributing conductive material on the sidewall of the first insulating substrate exposed due to the formation of the first via structure, wherein the first via structure penetrates the upper conductive trace structure, the lower conductive trace structure and the first insulating substrate; The upper conductive trace, the inner conductive connector, the outer conductive connector, and the lower conductive trace formed around the first section of the magnetic core form the primary winding of the transformer device, and the upper conductive trace, the inner conductive connector, the outer conductive connector, and the lower conductive trace formed around the second section of the magnetic core form the secondary winding of the transformer device.

2. The apparatus according to claim 1, characterized in that, The upper conductive trace structure further includes a first metal layer disposed on a first side of the second insulating substrate and a second metal layer disposed on a second side of the second insulating substrate, wherein the upper conductive trace is formed on the first metal layer. The lower conductive trace structure further includes a third metal layer disposed on a first side of the third insulating substrate and a fourth metal layer disposed on a second side of the third insulating substrate, wherein the lower conductive trace is formed on the third metal layer.

3. The apparatus according to claim 2, characterized in that, The thickness of the first adhesive layer is the same as the thickness of the first metal layer, and the thickness of the second adhesive layer is the same as the thickness of the third metal layer.

4. The apparatus according to claim 2, characterized in that, The thickness of the first adhesive layer is greater than the thickness of the first metal layer, or the thickness of the second adhesive layer is greater than the thickness of the third metal layer.

5. The apparatus according to claim 2, characterized in that, The second metal layer has a top layer trace, or the fourth metal layer has a top layer trace.

6. The apparatus according to claim 5, characterized in that, It also includes a second conductive through-hole structure, a third conductive through-hole structure, a winding start-up area, and a winding end-up area; The top layer trace is electrically connected to the winding start point lead-out area through the second conductive via structure, and the top layer trace is electrically connected to the winding end point lead-out area through the third conductive via structure.

7. The apparatus according to claim 6, characterized in that, The formation positions of the winding start point lead-out region and the winding end point lead-out region satisfy any one of the following conditions: The winding start point lead-out area is formed in the first metal layer, and the winding end point lead-out area is formed in the third metal layer; The winding start point lead-out area is formed in the first metal layer, and the winding end point lead-out area is formed in the first metal layer; The winding start point lead-out region is formed in the third metal layer, and the winding end point lead-out region is formed in the third metal layer; and The winding start point lead-out area is formed in the third metal layer, and the winding end point lead-out area is formed in the first metal layer.

8. The apparatus according to claim 1, characterized in that, The first solid boundary between the sidewall exposed due to the formation of the first through-hole structure and the outer periphery of the trench of the first insulating substrate has a first thickness, and the second solid boundary between the sidewall exposed due to the formation of the first through-hole structure and the inner periphery of the trench of the first insulating substrate has a second thickness, wherein the first thickness and the second thickness satisfy any one of the following conditions: The first thickness and the second thickness are each in the range of 0.10 mm to 0.55 mm; The first thickness and the second thickness are both in the range of 0.60 mm to 2.00 mm; The first thickness is in the range of 0.60 mm to 2.00 mm, and the second thickness is in the range of 0.10 mm to 0.55 mm; and The first thickness is in the range of 0.10 mm to 0.55 mm, and the second thickness is in the range of 0.60 mm to 2.00 mm.

9. The apparatus according to claim 1, characterized in that, It also includes a first plug structure and a second plug structure; The first hole plug structure fills the area of ​​the upper conductive trace structure that is exposed due to the formation of the first through-hole structure; The second hole plug structure fills the area of ​​the lower conductive trace structure that was exposed due to the formation of the first through-hole structure.

10. A converter device, characterized in that, Includes the transformer device according to any one of claims 1-9.

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