Slit component, ion generation device and ion implantation equipment

Abstract

The invention provides a slit component, an ion generation device and ion implantation equipment. The slit part is provided with an arc source slit used for leading out ions. At least the surface of the slit member exposed to the arc source slit is made of a non-metallic material that is conductive and resistant to fluorine corrosion. The slit member includes an inner member and an outer member. And the inner side piece is made of a non-metallic material which is conductive and resistant to fluorine corrosion. The inner member has a first inner surface and a first outer surface opposite in a thickness direction of the inner member. The first inner surface is adapted to face the plasma generation space. The inner member is provided with an inner opening for forming an arc source slit. The outer side piece is located on the side, facing the first outer surface, of the first inner surface in the thickness direction of the inner side piece. The outer side piece is detachably connected to the inner side piece. According to the invention, metal fluoride easy to peel off is prevented or avoided from being generated, the success of an ion implantation process is ensured, the yield risk is reduced, and the manpower burden is relieved. And the inner side part and the outer side part are detachably connected, so that the maintenance cost is reduced.

Description

Technical Field

[0001] This disclosure generally relates to the field of semiconductor devices, and more specifically to a slit component, an ion generation apparatus, and an ion implantation apparatus. Background Technology

[0002] In ion implantation, the arc chamber slit (also known as the arc source slit), a key component within the arc chamber used for confining and extracting ions, is typically made of high-melting-point metals such as tungsten and molybdenum to withstand high temperatures and corrosive environments. However, in actual operation, the arc chamber slit is constantly exposed to high-energy ions (especially F2+ generated when using fluorine-containing gases such as BF3). + When bombarded by ions, its surface reacts with fluorine to form metal fluorides with weak adhesion and loose structure. These compounds tend to form bulk deposits and may peel off due to thermal stress or sputtering.

[0003] If detached fragments fall into the electrode area, they may bridge the filament or cathode with the grounded arc chamber wall, causing an electrical short circuit, leading to plasma extinguishing and ion beam interruption, thus causing the ongoing ion implantation process to fail. Affected wafers, due to insufficient dosage, must be manually reworked by engineers, which not only increases the manpower burden but also brings yield risks of over-implantation or defect accumulation.

[0004] Therefore, there is a need to provide a slit component, an ion generation device, and an ion implantation device to at least partially solve the above problems. Summary of the Invention

[0005] The summary section introduces a series of simplified concepts, which will be further explained in detail in the detailed description section. This summary section is not intended to limit the key features and essential technical features of the claimed technical solution, nor is it intended to determine the scope of protection of the claimed technical solution.

[0006] To at least partially solve the above problems, a first aspect of this disclosure provides a slit component for an arc chamber, the interior of which is formed a plasma generation space. The slit component is provided with an arc source slit for ion extraction. At least the surface of the slit component exposed to the arc source slit is made of a non-metallic material that is conductive and resistant to fluorine corrosion. The slit component includes: The inner component, made of a non-metallic material that is conductive and resistant to fluorine corrosion, has a first inner surface and a first outer surface opposite in the thickness direction of the inner component. The first inner surface is adapted to face the plasma generation space. The inner component is provided with an inner opening for forming the arc source slit. An outer member is located on the side of the first inner surface facing the first outer surface along the thickness direction of the inner member, and the outer member is detachably connected to the inner member.

[0007] According to the slit component of the first aspect of this disclosure, since both the first inner surface of the inner component and the surface of the slit component exposed to the arc source slit are made of a non-metallic material that is conductive and resistant to fluorine corrosion, it will not be affected by fluorine-containing gases such as BF3. + The reaction occurs under the bombardment of high-energy ions, preventing or avoiding the formation of easily detachable metal fluorides. This, in turn, prevents plasma extinction and ion beam interruption, ensuring the success of the ion implantation process, reducing yield risks, and alleviating manpower burden. Moreover, since the inner and outer components are detachably connected, compared to solutions that integrate the inner and outer components into a single unit or structure, it is easier to replace one or both of the inner and outer components as needed, thereby reducing maintenance costs.

[0008] Optionally, the inner member has an inner opening, and the outer member has an outer opening. The outer opening and the inner opening are arranged in a straight line along the thickness direction of the inner member to jointly form the arc source slit, or one of the outer opening and the inner opening forms the arc source slit; and / or The first inner surface is configured as a rough surface; and / or The roughness of the first inner surface is denoted as Ra, where 0.4 μm ≤ Ra ≤ 1.6 μm.

[0009] Optionally, the inner member is provided with an inner opening for forming the arc source slit, and the inner member is provided with a receiving groove, the opening direction of the receiving groove being opposite to the first inner surface, and the receiving groove communicating with the inner opening. The outer component is connected to the receiving slot.

[0010] Optionally, the outer component does not protrude from the first outer surface.

[0011] Optionally, the outer component and the inner component are stacked along the thickness direction of the inner component; The outer component has a second inner surface and a second outer surface that are opposite to each other along the thickness direction of the outer component, and the second inner surface is arranged in contact with the first outer surface.

[0012] Optionally, the outer component includes: The body portion, having a base hole corresponding to the arc source slit, is made of a high-melting-point metal material; and A protective layer is disposed on the hole wall of the base hole, the protective layer completely covering the hole wall of the base hole, and the protective layer is made of a non-metallic material that is conductive and resistant to fluorine corrosion.

[0013] Optionally, the protective layer has a Mohs hardness greater than or equal to 72; and / or The protective layer is composed of graphene; and / or The high-melting-point metal material includes at least one of tungsten, molybdenum, and tantalum.

[0014] Optionally, in a plane perpendicular to the thickness direction of the inner member, the orthographic projection of the outer member lies entirely within the orthographic projection of the inner member; and / or The inner component is made of at least one of graphite and graphene; and / or The slit component further includes a connector, through which the outer component is detachably connected to the inner component; and / or The outer part is snapped onto the inner part.

[0015] A second aspect of this disclosure provides an ion generating apparatus, the ion generating apparatus comprising: An arc chamber includes a main body and the aforementioned slit component. The main body has a gas inlet at one end along a first direction and an open portion at the other end along the first direction. The slit component is connected to the main body at a position corresponding to the open portion to shield the open portion and form a plasma generation space with the main body. The slit component is provided with an arc source slit for extracting ions. Both the arc source slit and the gas inlet are connected to the plasma generation space. Cathode, connected to the arc chamber, for releasing electrons toward the plasma generation space; and A reflector is connected to the arc chamber, and the reflector and the cathode are arranged opposite each other across the plasma generation space along a second direction perpendicular to the first direction.

[0016] According to the ion generation apparatus of the second aspect of this disclosure, by employing the aforementioned slit component, the generation of easily peelable metal fluorides can be prevented or avoided, thereby preventing plasma extinction and ion beam interruption, achieving the technical objective of ensuring the success of the ion implantation process, reducing yield risk, and alleviating manpower burden.

[0017] A third aspect of this disclosure provides an ion implantation apparatus, the ion implantation apparatus comprising: The aforementioned ion generating device; A beam acceleration device, connected to the ion generating device, is used to accelerate the ion beam drawn from the ion generating device; and An injection processing chamber, connected to the beam acceleration device, is used to contain a wafer and to irradiate the wafer with an ion beam emitted from the beam acceleration device.

[0018] According to the ion implantation apparatus of the third aspect of this disclosure, by applying the above-described ion generation device, the technical objectives of ensuring the success of the ion implantation process, reducing yield risks, and alleviating manpower burden can be achieved. Attached Figure Description

[0019] The following drawings, which illustrate embodiments of this disclosure, are incorporated herein by reference as part of this disclosure and are used to understand this disclosure. The drawings show embodiments of this disclosure and their descriptions, serving to explain the principles of this disclosure. In the drawings, Figure 1 This is a schematic diagram of an ion implantation apparatus according to one embodiment of the present disclosure; Figure 2 This is a schematic diagram of the beam generation device. Figure 3 This is a schematic diagram of the slit component according to the first embodiment of the present disclosure; Figure 4 For along Figure 3 The sectional view cut by line AA in the middle; Figure 5 for Figure 3 A three-dimensional schematic diagram of the slit component shown; Figure 6 for Figure 3 An exploded view of the slit component shown; Figure 7 This is a cross-sectional schematic diagram of a slit component according to a second embodiment of the present disclosure; Figure 8 This is a cross-sectional schematic diagram of a slit component according to a third embodiment of the present disclosure; Figure 9 A cross-sectional schematic diagram of a slit member according to a fourth embodiment of the present disclosure; and Figure 10 This is a cross-sectional schematic diagram of a slit component according to a fifth embodiment of the present disclosure.

[0020] Explanation of reference numerals in the attached figures: 10: Ion implantation equipment; 20: Beam generation device 21: Ion generating device; 22: Extraction electrode 22a: Suppression electrode; 22b: Grounding electrode 23: Filament power supply; 24: Cathode power supply 25: Arc power supply; 26: Lead-out power supply 27: Suppression power supply; 28: Cathode 28a: Filament; 28b: Cathode head 29: Reflector; 30: Beam acceleration device 40: Substrate transfer processing apparatus; 41: Injection processing chamber IB: Ion beam; W: Wafer. 100: Arc chamber; S: Plasma generation space 110: Main body; 111: Gas inlet 120: Slit component; 121: Arc source slit 122: Inner part; 122a: First inner surface 122b: First outer surface; 122c: Inner opening 122d: Reception slot; 122e: Blind hole 122f: base; 122g: anti-corrosion layer 123: Outer part; 123a: Outer opening 123b: Second inner surface; 123c: Second outer surface 123d: Body part; 123e: Protective layer 123f: Through hole; 124: Connector D1: First direction; D2: Second direction DT: Thickness direction Detailed Implementation

[0021] In the following description, numerous specific details are set forth in order to provide a more thorough understanding of this disclosure. However, it will be apparent to those skilled in the art that embodiments of this disclosure may be practiced without one or more of these details. In other instances, certain technical features well-known in the art have not been described to avoid confusion with embodiments of this disclosure.

[0022] To fully understand the embodiments of this disclosure, a detailed structure will be presented in the following description. It is obvious that the implementation of the embodiments of this disclosure is not limited to the specific details familiar to those skilled in the art.

[0023] It should be understood that the terminology used herein is intended only to describe particular embodiments and is not intended to limit the scope of this disclosure. The singular forms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. When the terms “comprising” and / or “including” are used in this specification, they indicate the presence of the stated features, integrals, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components, and / or combinations thereof.

[0024] Ordinal numbers such as “first” and “second” used in this disclosure are merely identifiers and have no other meaning, such as a specific order. Furthermore, for example, the term “first component” does not imply the existence of a “second component,” nor does the term “second component” imply the existence of a “first component.” It should be noted that the terms “upper,” “lower,” “front,” “rear,” “left,” “right,” “inner,” “outer,” and similar expressions used in this disclosure are for illustrative purposes only and are not intended to be limiting.

[0025] The terms “center,” “parallel,” “perpendicular,” “aligned,” and “symmetrical” used in this disclosure are not necessarily precise, but may include typical engineering tolerances.

[0026] Hereinafter, specific embodiments of the present disclosure will be described in more detail with reference to the accompanying drawings, which illustrate representative embodiments of the present disclosure and are not intended to limit the present disclosure.

[0027] See Figure 1 The ion implantation equipment is a so-called high-energy ion implantation device. The ion implantation equipment generates an ion beam IB by extracting and accelerating the ions generated in the ion generation device 21, and then propagating the ion beam IB along the beamline to the workpiece (e.g., wafer W), thereby implanting ions into the workpiece.

[0028] See Figure 1 and Figure 2 The ion implantation apparatus 10 includes a beam generating device 20, a beam accelerating device 30, and a substrate transfer processing device 40. The beam generating device 20 generates ions and performs mass separation. The beam accelerating device 30 further accelerates the ion beam IB to make it a high-energy ion beam. The substrate transfer processing device 40 implants the transmitted high-energy ion beam into a semiconductor wafer. The beam generating device 20 has an ion generating device 21 and an extraction electrode 22. In the beam generating device 20, ions are extracted from the ion generating device 21 via the extraction electrode 22 while being accelerated. The beam accelerating device 30 includes multiple linear accelerating devices, i.e., one or more high-frequency resonators, for accelerating the ion beam. The beam accelerating device 30 is a high-frequency accelerating mechanism that accelerates ions through the action of a high-frequency (RF) electric field. The substrate transfer processing device 40 includes an implantation processing chamber 41 and a substrate transfer section. The implantation processing chamber 41 is used to accommodate the wafer W. The substrate transfer section is equipped with a wafer transfer mechanism, such as a transfer robot for moving the wafer W before ion implantation into the implantation processing chamber 41 and moving the ion-implanted wafer W out of the implantation processing chamber 41.

[0029] The aforementioned ion generation device 21 includes an arc chamber 100. The arc chamber 100 has an arc chamber 100 slit (also called an arc source slit 121). During ion implantation, the arc chamber 100 slit, as a key component within the arc chamber 100 for confining and extracting ions, is typically made of high-melting-point metals such as tungsten or molybdenum to withstand high temperatures and corrosive environments. However, in actual operation, the arc chamber 100 slit is exposed to high-energy ions (especially F2O3 generated when using fluorine-containing gases such as BF3) for extended periods. + Under ion bombardment, the surface reacts with fluorine to form metal fluorides with weak adhesion and loose structure. These compounds easily form bulk deposits and can peel off due to thermal stress or sputtering. If the peeled fragments fall into the electrode area, they may bridge the filament 28a or cathode 28 with the grounded arc chamber 100 wall, causing an electrical short circuit, resulting in plasma extinguishing and ion beam IB interruption, thus causing the ongoing ion implantation process to fail. The affected wafers, due to insufficient dosage, must be manually reworked by engineers, which not only increases the manpower burden but also brings the risk of over-implantation or defect accumulation in yield.

[0030] Furthermore, the detached debris can contaminate the interior of the ion source, alter the electric field distribution, and cause beam instability, significantly shortening the ion source's lifespan. To restore equipment functionality, frequent shutdowns are required for cleaning or component replacement, reducing equipment operating cycles and effective capacity, thereby impacting the overall production efficiency and cost control of the wafer fab.

[0031] To at least partially solve the above problems, this disclosure provides a slit component 120, an ion generation device 21, and an ion implantation device 10. See below for further details. Figures 1 to 10 The examples shown illustrate the slit component 120, the ion generation device 21, and the ion implantation device 10 according to the present disclosure.

[0032] See Figures 2 to 10 This disclosure provides a slit component 120 for use in an arc chamber 100. A plasma generation space S is formed inside the arc chamber 100. The slit component 120 is provided with an arc source slit 121 for ion extraction. At least the surface of the slit component 120 exposed to the arc source slit 121 is made of a non-metallic material that is conductive and resistant to fluorine corrosion. The slit component 120 includes an inner member 122 and an outer member 123. The inner member 122 is made of a non-metallic material that is conductive and resistant to fluorine corrosion. The inner member 122 has a first inner surface 122a and a first outer surface 122b opposite to each other along the thickness direction DT of the inner member 122. The first inner surface 122a is adapted to face the plasma generation space S. The outer member 123 is located along the thickness direction DT of the inner member 122 on the side of the first inner surface 122a facing the first outer surface 122b. The outer member 123 is detachably connected to the inner member 122.

[0033] According to the embodiments of the present disclosure, the slit component 120, since both the first inner surface 122a of the inner member 122 and the surface of the slit component 120 exposed to the arc source slit 121 are made of a conductive and fluorine-resistant material, will not be affected by fluorine-containing gases such as BF3. + The reaction occurs under the bombardment of high-energy ions, thereby preventing or avoiding the formation of easily detachable metal fluorides, and thus preventing plasma extinction and ion beam IB interruption, ensuring the success of the ion implantation process, reducing yield risks, and alleviating manpower burden. Moreover, since the inner component 122 and the outer component 123 are detachably connected, compared to a solution that sets the inner component 122 and the outer component 123 as a single component or structure, it is easier to replace one or both of the inner component 122 and the outer component 123 as needed, thereby helping to reduce maintenance costs.

[0034] See Figures 3 to 8 In some embodiments, the inner member 122 is provided with an inner opening 122c. The outer member 123 is provided with an outer opening 123a. The outer opening 123a and the inner opening 122c are arranged in a straight line along the thickness direction DT of the inner member 122 to jointly form the arc source slit 121. The surface of the outer member 123 exposed to the outer opening 123a is made of a conductive and fluorine-resistant material. It can be understood that the inner opening 122c constitutes a slit in the arc source slit 121 near the plasma generation space S, and the outer opening 123a constitutes another slit in the arc source slit 121 away from the plasma generation space S. These two slits are arranged in a straight line along the thickness direction DT of the inner member 122 after the inner member 122 and the outer member 123 are assembled, thereby forming a complete arc source slit 121. Since the inner part 122 is made entirely of a conductive and fluorine-resistant material, and the outer part 123, at least the surface exposed to the outer opening 123a, is made of a conductive and fluorine-resistant material, the slit part 120 can achieve both conductivity and fluorine corrosion resistance, thereby preventing the generation of flaking material that could affect ion implantation.

[0035] Alternatively, the inner component 122 can be made entirely of the same material. Accordingly, to ensure the durability and stability of the arc source slit 121, the inner component 122 and the surface of the outer component 123 exposed to the arc source slit 121 are made of the same material, such as graphene.

[0036] Optionally, the material used for the surface of the inner member 122 exposed to the arc source slit 121 can be different from the material of the rest of the inner member 122. The material used for the surface of the inner member 122 exposed to the arc source slit 121 can be the same as the material used for the surface of the outer member 123 exposed to the arc source slit 121, such as graphene. The material of the rest of the inner member 122 can be graphite.

[0037] See Figure 9 and Figure 10 In some other embodiments, the outer opening 123a and the inner opening 122c may be arranged in a nested manner. For example, the outer opening 123a surrounds the exterior of the solid structure defining the inner opening 122c (e.g., Figure 9 (as shown), or the inner opening 122c surrounds the exterior of the solid structure used to define the outer opening 123a (as shown). Figure 10 As shown). Figure 9 As shown, the inner opening 122c constitutes the arc source slit 121. (As indicated...) Figure 10 As shown, the outer opening 123a forms the arc source slit 121.

[0038] In some embodiments, the first inner surface 122a is configured as a rough surface. On the one hand, the rough surface enhances mechanical anchoring and adhesion. By forming a micro-uneven structure, the roughened surface significantly improves the mechanical interlocking effect between fluoride or particles bombarding the first inner surface 122a and the inner component 122, thereby enhancing adhesion. Simultaneously, it increases the effective contact area, reduces dependence on intermolecular forces, and prevents the peeling or detachment of deposits formed by fluoride or particles bombarding the first inner surface 122a. On the other hand, the roughened surface improves durability and protective effect. By increasing contact points and mechanical locking, the roughening treatment can extend the service life of the inner component 122, reduce defects such as peeling, and enhance protective properties such as corrosion resistance.

[0039] Optionally, the roughness of the first inner surface 122a is denoted as Ra. Wherein, 0.4um ≤ Ra ≤ 1.6um. It can be understood that the roughness of the first inner surface 122a is any one of 0.4um, 1um, 1.6um, and other values ​​between 0.4um and 1.6um.

[0040] See Figures 4 to 6 ,as well as Figures 8 to 10 In some embodiments, the inner member 122 is provided with a receiving groove 122d. The opening direction of the receiving groove 122d is opposite to that of the first inner surface 122a. The receiving groove 122d communicates with the inner opening 122c. The outer member 123 is connected to the receiving groove 122d. The outer opening 123a of the outer member 123 is aligned with the inner opening 122c. By providing a receiving groove 122d in the inner member 122 to accommodate the outer member 123, it is helpful to reduce the overall thickness dimension DT of the slit member 120 while achieving corrosion resistance, thereby improving structural compactness, reducing volume, and reducing weight.

[0041] Optionally, the outer part 123 does not protrude from the first outer surface 122b. This helps to further reduce the overall size of the slit part 120 along the thickness direction DT.

[0042] See Figure 7 In other embodiments, the outer member 123 and the inner member 122 are stacked along the thickness direction DT of the inner member 122. The outer member 123 has a second inner surface 123b and a second outer surface 123c opposite to the thickness direction DT of the outer member 123. The second inner surface 123b is fitted to the first outer surface 122b. The second outer surface 123c is located on the side of the outer member 123 opposite to the inner member 122. In this embodiment, the inner member 122 and the outer member 123 are stacked, which facilitates manufacturing and assembly.

[0043] See Figure 4 , Figures 7 to 10 In some embodiments, the outer component 123 includes a body portion 123d and a protective layer 123e. The body portion 123d has a base hole at a location corresponding to the arc source slit 121. The body portion 123d is made of a high-melting-point metallic material. The protective layer 123e is disposed on the wall of the base hole. The protective layer 123e completely covers the wall of the base hole. The protective layer 123e is made of a non-metallic material that is conductive and resistant to fluorine corrosion. It can be understood that the base hole is a process hole formed during the manufacturing process of the body portion 123d, and the protective layer 123e is a protective structure covering the wall of the base hole to prevent the body portion 123d from being corroded by fluorine. The surface of the protective layer 123e constitutes the inner surface of the outer opening 123a.

[0044] Optionally, the protective layer 123e has a Mohs hardness greater than or equal to 72. The protective layer 123e needs to meet the hardness requirement in order to slow down the rate at which the protective layer 123e is worn away by high-energy particle bombardment, thereby extending the service life of the outer part 123 and the machine tool operating cycle.

[0045] Optionally, the protective layer 123e is made of graphene. Graphene was chosen because of its following advantages.

[0046] First, graphene possesses extremely strong resistance to fluorine corrosion. Specifically, graphene consists of a single layer of sp... 2 Graphene is composed of hybrid carbon atoms with high chemical bond energies. Although fluorine can react with carbon to form CF4, the surface of graphene is highly inert, resulting in an extremely low reaction rate in low-temperature / low-energy plasmas. In contrast to metals (W, Mo) which form volatile fluorides (WF6, MoF6), graphene can only form surface fluorinated carbons (such as CF4). x Furthermore, graphene is not easily peeled off. Therefore, graphene can significantly reduce material peeling caused by fluorine corrosion, thus avoiding the risk of short circuits at the source.

[0047] Secondly, graphene exhibits excellent electrical conductivity. Specifically, graphene's room-temperature carrier mobility reaches 15,000–200,000 cm⁻¹. 2 / V·s. Graphene has a higher electrical conductivity than copper (theoretical value ~10). 6 (S / m). Graphene can effectively conduct away charge, preventing static electricity buildup that could lead to arcing. Graphene ensures stable slit potential and maintains beam consistency.

[0048] Furthermore, graphene possesses extremely high thermal conductivity and thermal stability. Specifically, graphene's thermal conductivity is approximately 5000 W / m·K (higher than copper's 400 W / m·K). Graphene can rapidly dissipate localized heat generated by ion bombardment and suppress deformation or cracking caused by thermal stress. Graphene maintains its structural integrity even under vacuum and high-temperature conditions (>600°C).

[0049] Furthermore, graphene is atomically thin and has an ultra-smooth surface. Specifically, a single graphene layer is only 0.335 nm thick, enabling extremely precise slit openings. The surface roughness of graphene is close to the atomic level (<0.2 nm). The benefits of this are: reduced ion scattering; improved beam collimation and focusing accuracy; reduced edge electric field concentration, and suppression of partial discharge.

[0050] Finally, graphene possesses high mechanical strength and flexibility. Specifically, graphene has a tensile strength of 130 GPa (100 times that of steel). Although thin, graphene is not easily broken and can withstand plasma impacts. Graphene can be bonded to complex-shaped substrates (such as slit structures supported by metal frames) through transfer processes.

[0051] Optionally, the high-melting-point metal material includes at least one of tungsten, molybdenum, and tantalum. That is, the body part 123d can be made of the same metal material or alloy thereof used in the conventional slit component 120.

[0052] See Figure 4 , Figures 7 to 9 Optionally, the orthographic projection of the outer member 123 lies entirely within the orthographic projection of the inner member 122, in a plane perpendicular to the thickness direction DT of the inner member 122. This ensures that the outer member 123 is completely covered by the inner member 122, preventing fluorine corrosion of the outer member 123 and achieving more comprehensive protection for the outer member 123.

[0053] Optionally, the inner part 122 is composed of at least one of graphite and graphene. The role and effect of graphene have been described above and will not be repeated here. The role and effect of graphite will be described here. The inner part 122 of the slit member 120, which is made of graphite, defines a slit in the arc source slit 121 near the plasma generation space S through an inner opening 122c made of graphite, thereby minimizing the contaminant incorporation into the ion beam IB. The inner part 122 of the slit member 120 is the portion exposed to the high-concentration plasma in the plasma generation space S, and is arguably the part that contributes the most to the exfoliation of contaminants and their incorporation into the ion beam IB drawn from the arc source slit 121. By using graphite in this part, the exfoliation of contaminants and their incorporation into the ion beam IB can be appropriately suppressed, and in particular, the incorporation of metallic elements from the high-melting-point metal material itself or trace amounts of metallic elements contained in the high-melting-point metal material can be effectively suppressed.

[0054] High-purity isotropic graphite is preferred. The electrical conductivity of high-purity isotropic graphite is: ~1–2 × 10⁻⁶. 4 S / m. High-purity isotropic graphite forms a stable C–F passivation layer on its surface, resulting in an extremely low corrosion rate and thus resistance to fluorine corrosion. High-purity isotropic graphite has the advantages of self-lubrication, easy processing, and controllable cost. Moreover, its service life can be further improved by increasing density, reducing porosity, and increasing purity (metallic impurities <1 ppm).

[0055] Optionally, the inner component 122 may be made of materials other than graphite and graphene, such as: N-type doped silicon carbide, conductive titanium diboride (TiB2), conductive zirconium diboride (ZrB2), diamond-like carbon film, boron-doped diamond, etc.

[0056] Among them, N-type doped silicon carbide is intrinsically a semiconductor, but its conductivity can reach 10⁻⁶ by doping with nitrogen (n-type). 2 -10 4 High conductivity of S / m. In a fluorine plasma environment, SiF is formed on the surface of N-type doped silicon carbide. x The / C–F hybrid passivation layer exhibits a corrosion rate 1–2 orders of magnitude lower than that of the metal. It decomposes at temperatures above 2700°C and remains stable even at high temperatures.

[0057] Conductive titanium diboride and conductive zirconium diboride combine the conductivity of metals with the corrosion resistance of ceramics. Both are intrinsically conductive and do not require doping with active metals. Neither titanium diboride nor zirconium diboride forms volatile fluorides; boron forms BF3, but at a slow rate, and the surface can be passivated. Both titanium diboride and zirconium diboride have high hardness and are resistant to sputtering.

[0058] Diamond-like carbon thin film amorphous carbon material, containing sp 3 / sp 2 Mixed bonds. Doped DLCs (such as nitrogen-doped and boron-doped) can achieve conductivity up to 10⁻⁶. 2 -10 4 S / m, adjusting sp 2 The required content is sufficient; metal doping is unnecessary. Its fluorine resistance is similar to graphite, forming a stable C–F layer after surface fluorination; its corrosion rate is more than 10 times lower than that of metals. Diamond-like carbon films can be deposited as an anti-corrosion coating on graphite or metal substrates to improve surface properties. Diamond-like carbon films offer advantages such as smoothness and wear resistance. They can also be used on insulating substrates. The inner wall of the arc source slit 121 can utilize a diamond-like carbon film as an alternative to graphene.

[0059] Boron-doped diamond has an electrical conductivity of up to 10. 2 -10 4 The S / m value is controllable. Fluorine resistance is near perfect, C–F bonds are stable, and there are no volatile byproducts. Thermal conductivity, hardness, and chemical inertness are among the highest of all materials.

[0060] See Figure 8 In some embodiments, the inner member 122 includes a base 122f and a resist layer 122g. The base 122f is the body structure of the inner member 122. The resist layer 122g forms the inner wall of the inner opening 122c. The base 122f and the resist layer 122g are made of different non-metallic materials. The base 122f is made of graphite. The resist layer 122g is made of graphene or the aforementioned diamond-like carbon film or similar materials.

[0061] See Figure 10 In some embodiments, the inner member 122 has an inner opening 122c. The outer member 123 has a body portion 123d and a protective layer 123e. A flange 123d1 is formed on the portion of the body portion 123 near the outer opening 123a, extending along the thickness direction DT of the outer member 123. The flange 123d1 protrudes from the second inner surface of the inner member 122 to allow insertion into the inner opening 122c. The protective layer 123e is provided on the surfaces of the flange 123d1 and the body portion 123, excluding the flange 123d1, facing the outer opening 123a. The flange 123d1 is also adapted to have a protective layer 123e on the surface facing the plasma generation space S. The inner member 122 and the protective layer 123e are made of a conductive and fluorine-resistant non-metallic material. Thus, the surfaces of the slit member 120 exposed to the plasma generation space S and the surfaces exposed to the arc source slit 121 are protected.

[0062] Optionally, the inner part 122 is made of graphite. The body part 123d is made of a high-melting-point metal. The protective layer is made of graphene.

[0063] Optionally, the first inner surface 122a of the inner member 122 is flush with the portion of the outer member 123 that is embedded in the inner opening 122c.

[0064] See Figure 5 and Figure 6 In some embodiments, the slit component 120 further includes a connector 124. The outer component 123 is detachably connected to the inner component 122 via the connector 124. By removing the connector 124, the inner component 122 and the outer component 123 can be disassembled for cleaning or replacement of the inner component 122 and / or the outer component 123. By assembling the connector 124, the inner component 122 and the outer component 123 can be assembled.

[0065] Optionally, the connector 124 is a screw. The inner member 122 has a blind hole 122e on the side facing the outer member 123. The blind hole 122e is a threaded hole. The outer member 123 has a through hole 123f. The through hole 123f has a smooth surface. After the inner member 122 and the outer member 123 are arranged in a preset position, the screw passes through the through hole 123f and is threaded into the blind hole 122e. Tightening the screw achieves a secure connection between the inner member 122 and the outer member 123. Disassembly of the outer member 123 and the inner member 122 can be achieved by loosening the screw and removing it from the blind hole 122e.

[0066] In some embodiments, the outer member 123 is snap-fitted to the inner member 122. This snap-fit ​​connection facilitates assembly and disassembly.

[0067] Furthermore, along the thickness direction DT of the slit component 120, the cross-sectional area of ​​the arc source slit 121 decreases from both ends towards the middle. This can be implemented with reference to existing related technologies.

[0068] Optionally, the dimensional tolerances of the inner member 122 and the outer member 123 relative to the original slit member 120 to be replaced are less than or equal to 0.02 mm. The dimensional tolerances of the mating of the inner member 122 and the outer member 123 are less than or equal to 0.02 mm. This helps to avoid abnormalities during the installation of the split structure.

[0069] It is understandable that the above content, although... Figures 3 to 8 The various embodiments shown are described separately, but the structural features of the various embodiments can be combined without conflicting with each other, thereby obtaining other embodiments besides the illustrated embodiments, all of which fall within the scope of protection claimed in this disclosure.

[0070] According to the slit component 120 of this disclosure, the inner part 122, which is prone to producing blocky spalling, is replaced from the original one-piece metal material with a detachable and replaceable split graphite material. The use of graphite material has good conductivity and does not affect the deflection of electrons in the arc chamber 100. Due to its high corrosion resistance and the mechanical grinding roughening treatment on the surface of the graphite material, the surface roughness of the graphite can be improved, preventing the generation of blocky spalling. At the same time, the metal material around the slit is retained, and a graphene coating is deposited on the inner surface of the arc source slit 121 to prevent the generation of blocky spalling and improve the service life of the slit component 120, meeting production requirements.

[0071] Based on the slit component 120 of this disclosure, a comparison is made with the original structure during use: 1. No changes are needed to the internal structure of the arc chamber 100, nor to the size and conductivity of the slit component 120, so as to have no effect on the generation and extraction of ions.

[0072] 2. The slit component 120 has been changed from the original integral metal structure to a split structure assembled from the inner part 122 and the outer part 123. The inner side of the outer part 123 has a smaller contact area with fluoride ions, and the contact surface is coated with graphene to prevent the formation of blocky peelings.

[0073] Based on the slit component 120 of this disclosure, a comparison is made with the original structure during routine maintenance: 1. The original structure, being a monolithic design, required complete replacement for periodic preventative maintenance. Contaminants generated on the metal surface during use were difficult to clean, necessitating external cleaning services, which were costly. The modified split structure allows for the separation of the inner component 122 during periodic preventative maintenance by disassembling the connector 124. The outer component 123 can be reused as long as the width of the outer opening 123a remains normal. When the inner component 122 is made of graphite, deposits on the graphite surface are easy to clean, and the roughening treatment is inexpensive.

[0074] 2. The overall dimensions and slit width and length of the slit component 120 do not need to be changed. After assembling the split slit component 120, the remaining steps are the same as the original preventive maintenance process.

[0075] Furthermore, according to the slit component 120 of this disclosure, by specifically designing the dimensions of the outer part 123, the bombardment area of ​​the metal material within the arc chamber 100 is reduced to prevent the generation of spalling. The body portion 123d of the outer part 123 is made of metal and has an added graphene coating as a protective layer 123e, which results in slower wear compared to graphite material. Since the service life of the slit component 120 is determined by the width of the arc source slit 121, this design can improve the service life and cycle life of the slit component 120.

[0076] See Figure 2 The present disclosure also provides an ion generating apparatus 21. The ion generating apparatus 21 includes an arc chamber 100, a cathode 28, and a reflector 29. The arc chamber 100 includes a main body 110 and the aforementioned slit member 120. A gas inlet 111 is provided at one end of the main body 110 along a first direction D1. An open portion is provided at the other end of the main body 110 along the first direction D1. The slit member 120 is connected to the main body 110 at a position corresponding to the open portion, thereby shielding the open portion and forming a plasma generating space S with the main body 110. The slit member 120 also has an arc source slit 121 for extracting ions. Both the arc source slit 121 and the gas inlet 111 are connected to the plasma generating space S. The cathode 28 is connected to the arc chamber 100. The cathode 28 is used to release electrons toward the plasma generating space S. The reflector 29 is connected to the arc chamber 100. Furthermore, the reflector 29 and the cathode 28 are arranged opposite each other along a second direction D2 perpendicular to the first direction D1, separated by the plasma generation space S. Here, the first direction D1 is also the thickness direction DT of the inner member 122 and the outer member 123 mentioned above.

[0077] According to the embodiments of the present disclosure, the ion generation apparatus 21, by employing the slit component 120 described above, can prevent or avoid the generation of easily peeled metal fluorides, thereby preventing plasma extinction and ion beam IB interruption, achieving the technical objective of ensuring the success of the ion implantation process, reducing yield risk, and alleviating manpower burden.

[0078] See Figures 3 to 10 Optionally, the arc source slit 121 has an elongated shape extending along a second direction D2. The second direction D2 may also be referred to as the axial direction. In the arc chamber 100, a positive lead-out voltage is applied to the ground wire via the lead-out power supply 26.

[0079] See Figure 2In some embodiments, the cathode 28 has a filament 28a and a cathode head 28b. The filament 28a is connected to a filament power supply 23. The cathode head 28b is electrically connected to a cathode power supply 24. The filament 28a is heated by the filament power supply 23, generating thermionic electrons near the tip of the cathode head 28b. The primary thermionic electrons generated in the filament 28a are accelerated by a cathode voltage (e.g., 300–600 V) generated by the cathode power supply 24 and collide with the cathode head 28b, using the heat generated by the collision to heat the cathode head 28b. The heated cathode head 28b generates secondary thermionic electrons, which are accelerated by an arc voltage (e.g., 70–150 V) applied between the cathode head 28b and the arc chamber 100 by the arc power supply 25. The accelerated secondary thermionic electrons ionize the source gas introduced from the gas inlet 111, and in order to generate a plasma containing multivalent ions, they are released as beam electrons with sufficient energy into the plasma generation space S. The beam electrons released into the plasma generation space S are bound by a magnetic field applied axially to the plasma generation space S, and move in a spiral motion along the magnetic field. By making the electrons move in a spiral motion in the plasma generation space S, the movement of the electrons can be confined to a certain area, thereby improving the plasma generation efficiency.

[0080] See Figure 2 Near the ion generation device 21, an extraction electrode 22 is disposed for extracting the ion beam IB through the arc source slit 121 of the arc chamber 100. The extraction electrode 22 includes a suppression electrode 22a and a ground electrode 22b. The suppression electrode 22a is connected to a suppression power supply 27 and a negative suppression voltage is applied. The ground electrode 22b is connected to a ground wire.

[0081] See Figure 1 The present disclosure also provides an ion implantation apparatus 10. The ion implantation apparatus 10 includes the aforementioned ion generating device 21, a beam accelerating device 30, and an implantation processing chamber 41. The beam accelerating device 30 is connected to the ion generating device 21. The beam accelerating device 30 is used to accelerate the ion beam IB drawn from the ion generating device 21. The implantation processing chamber 41 is connected to the beam accelerating device 30. The implantation processing chamber 41 is used to contain a wafer and to irradiate the wafer with the ion beam IB emitted from the beam accelerating device 30.

[0082] According to the embodiments of the present disclosure, the ion implantation apparatus 10, by applying the ion generation device 21 described above, can achieve the technical objectives of ensuring the success of the ion implantation process, reducing yield risks, and alleviating manpower burden.

[0083] This disclosure has the following beneficial effects: The graphite material used in the inner component 122 has a larger surface roughness and higher corrosion resistance than metal. The inner side of the outer component is coated with graphene, and the overall structure will not produce blocky spalling. As a result, the generation of spalling in the arc chamber 100 can be reduced.

[0084] The cost of using the slit component 120 has been reduced. The value of graphite material is far lower than that of metal material, and the modular structure reduces cleaning and replacement costs.

[0085] It reduces the impact of abnormal downtime caused by spalling issues on products, increases equipment output and reduces the workload of on-duty personnel, and extends the service life of the arc source, thereby improving the machine's operating cycle.

[0086] Unless otherwise defined, the technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. The terminology used herein is for descriptive purposes only and is not intended to limit the scope of this disclosure. Terms such as “setup” appearing herein can refer to either a component being directly attached to another component or a component being attached to another component via an intermediary. A feature described in one embodiment herein may be applied, alone or in combination with other features, to another embodiment, unless that feature is not applicable in that other embodiment or is otherwise stated.

[0087] This disclosure has been described through the above embodiments; however, it should be understood that the above embodiments are for illustrative purposes only and are not intended to limit this disclosure to the described embodiments. Those skilled in the art will understand that many more variations and modifications can be made based on the teachings of this disclosure, all of which fall within the scope of protection claimed in this disclosure.

Claims

1. A slit component for an arc chamber, wherein a plasma generation space is formed inside the arc chamber, characterized in that, The slit component is provided with an arc source slit for ion extraction, and at least the surface of the slit component exposed to the arc source slit is made of a non-metallic material that is conductive and resistant to fluorine corrosion. The slit component includes: The inner component, made of a non-metallic material that is conductive and resistant to fluorine corrosion, has a first inner surface and a first outer surface opposite in the thickness direction of the inner component, the first inner surface being adapted to face the plasma generation space; and An outer member is located on the side of the first inner surface facing the first outer surface along the thickness direction of the inner member, and the outer member is detachably connected to the inner member.

2. The slit component according to claim 1, characterized in that, The inner member has an inner opening, and the outer member has an outer opening. The outer opening and the inner opening are arranged in a straight line along the thickness direction of the inner member to jointly form the arc source slit, or one of the outer opening and the inner opening forms the arc source slit; and / or The first inner surface is configured as a rough surface; and / or The roughness of the first inner surface is denoted as Ra, where 0.4 μm ≤ Ra ≤ 1.6 μm.

3. The slit component according to claim 1, characterized in that, The inner component is provided with an inner opening for forming the arc source slit, and the inner component is provided with a receiving groove, the opening direction of the receiving groove being opposite to the first inner surface, and the receiving groove communicating with the inner opening. The outer component is connected to the receiving slot.

4. The slit component according to claim 3, characterized in that, The outer component does not protrude from the first outer surface.

5. The slit component according to claim 1, characterized in that, The outer component and the inner component are stacked along the thickness direction of the inner component; The outer component has a second inner surface and a second outer surface that are opposite to each other along the thickness direction of the outer component, and the second inner surface is arranged in contact with the first outer surface.

6. The slit component according to any one of claims 1 to 5, characterized in that, The outer component includes: The body portion, having a base hole corresponding to the arc source slit, is made of a high-melting-point metal material; and A protective layer is disposed on the hole wall of the base hole, the protective layer completely covering the hole wall of the base hole, and the protective layer is made of a non-metallic material that is conductive and resistant to fluorine corrosion.

7. The slit component according to claim 6, characterized in that, The protective layer has a Mohs hardness greater than or equal to 72; and / or The protective layer is composed of graphene; and / or The high-melting-point metal material includes at least one of tungsten, molybdenum, and tantalum.

8. The slit component according to any one of claims 1 to 5, characterized in that, In a plane perpendicular to the thickness direction of the inner member, the orthographic projection of the outer member lies entirely within the orthographic projection of the inner member; and / or The inner component is made of at least one of graphite and graphene; and / or The slit component further includes a connector, through which the outer component is detachably connected to the inner component; and / or The outer part is snapped onto the inner part.

9. An ion generating device, characterized in that, The ion generating device includes: An arc chamber, comprising a main body and a slit component as described in claims 1 to 8, wherein one end of the main body along a first direction is provided with a gas inlet, and the other end of the main body along the first direction is connected to the slit component, the slit component and the main body enclose a plasma generation space, and the slit component is provided with an arc source slit for extracting ions, and both the arc source slit and the gas inlet are connected to the plasma generation space; Cathode, connected to the arc chamber, for releasing electrons toward the plasma generation space; and A reflector is connected to the arc chamber, and the reflector and the cathode are arranged opposite each other across the plasma generation space along a second direction perpendicular to the first direction.

10. An ion implantation device, characterized in that, The ion implantation device includes: The ion generating apparatus according to claim 9; A beam acceleration device, connected to the ion generating device, is used to accelerate the ion beam drawn from the ion generating device; and An injection processing chamber, connected to the beam acceleration device, is used to contain a wafer and to irradiate the wafer with an ion beam emitted from the beam acceleration device.

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