Perovskite passivation layer, preparation material thereof and solar cell

Abstract

The invention discloses a perovskite passivation layer, a preparation material thereof and a solar cell, and belongs to the technical field of perovskite solar cells. The passivation layer preparation material comprises a first defect passivator, a second defect passivator, a main solvent and a coordination solvent, the first defect passivator is a material capable of forming a DJ phase 2D perovskite layer or an ACI phase 2D perovskite layer with the perovskite component; the second defect passivator is a material capable of forming an RP phase 2D perovskite layer with the perovskite component; the coordination solvent is a solvent capable of forming a coordination intermediate phase with one or more of the perovskite components. The preparation material of the passivation layer can passivate the defects of the perovskite crystal boundary, the interior and the upper surface, the load loss is reduced, and the service life of the cell is prolonged. The perovskite passivation layer prepared from the preparation material can effectively realize perovskite surface reconstruction, solves the problems of irregular morphology, broken crystal, large roughness and the like of perovskite crystal grains, and has a better passivation effect.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of perovskite solar cells, in particular to a perovskite passivation layer, a preparation material thereof and a solar cell. BACKGROUND

[0002] The single-junction efficiency of the perovskite solar cell (PSC) has exceeded 26%, and the efficiency of the perovskite / silicon tandem solar cell has exceeded 33%, which is far higher than that of the existing traditional polycrystalline silicon solar cell, and has become a new star in the photovoltaic industry.

[0003] However, the trans-widely bandgap solar cell applied in the tandem device has more complex defect structures than the conventional perovskite cell, and the passivation is more difficult, which is one of the important factors for the efficiency loss of the perovskite / silicon tandem solar cell. The passivation methods commonly used in the widely bandgap perovskite solar cell are mostly inherited from the conventional narrow bandgap perovskite cell, and the processing capacity for complex grain boundaries and complex defects is relatively insufficient.

[0004] Therefore, developing an effective passivation method to effectively handle the complex defects of the widely bandgap perovskite solar cell is an urgent problem to be solved in the field.

[0005] In view of this, the present application is proposed. SUMMARY

[0006] The present application aims to provide a perovskite passivation layer, a preparation material thereof and a solar cell to solve or improve the above technical problems.

[0007] The present application can be achieved as follows:

[0008] In a first aspect, the present application provides a passivation layer preparation material, which comprises a first defect passivation agent, a second defect passivation agent, a main solvent and a coordination solvent.

[0009] The first defect passivation agent is a material capable of forming a DJ phase 2D perovskite layer or an ACI phase 2D perovskite layer with a perovskite component;

[0010] The second defect passivation agent is a material capable of forming an RP phase 2D perovskite layer with a perovskite component;

[0011] The coordination solvent is a solvent capable of forming a coordination intermediate phase with one or more of the perovskite components.

[0012] In an optional embodiment, the first defect passivation agent comprises at least one of a bis-amine salt and a guanidine salt;

[0013] And / or, the second defect passivation agent comprises at least one of a long-chain monoamine salt, an aromatic ring-containing monoamine salt and a long-chain guanidine salt.

[0014] In an optional embodiment, the first defect passivating agent includes at least one of EDAI2, PDAI2, BDAI2, GACl, and GABr;

[0015] And / or, the second defect passivating agent includes at least one of PEAI, F-PEAI, MeO-PEAI, CF3-PEAI, OAMI, and PhenHCl.

[0016] In an optional embodiment, the amount of the first defect passivating agent is 0.1 mg / mL to 1 mg / mL;

[0017] And / or, the amount of the second defect passivating agent used is 0.1 mg / mL to 3 mg / mL.

[0018] In an optional embodiment, the main solvent includes at least one selected from IPA, methanol, ethanol, n-butanol, and trifluoroethanol;

[0019] And / or, the coordination solvent includes at least one of DMF, DMSO, NMP, 2-ME and GBL.

[0020] In an optional embodiment, the volume of the coordination solvent does not exceed 1% of the volume of the bulk solvent.

[0021] In a second aspect, the present invention provides a perovskite passivation layer, wherein the raw materials for preparing the perovskite passivation layer include the passivation layer preparation materials of any of the foregoing embodiments.

[0022] Thirdly, the present invention provides a method for preparing a perovskite passivation layer, comprising: coating the passivation layer preparation material of any of the foregoing embodiments onto the surface of a substrate and drying it.

[0023] Fourthly, the present invention provides an application of the perovskite passivation layer as described in the foregoing embodiments in a solar cell, the solar cell including a single-junction wide-bandgap perovskite solar cell or a perovskite / silicon tandem solar cell.

[0024] Fifthly, the present invention provides a solar cell comprising the perovskite passivation layer of the foregoing embodiments;

[0025] The solar cell also includes a perovskite light-absorbing layer and a charge transport layer, with a perovskite passivation layer disposed between the perovskite light-absorbing layer and the charge transport layer.

[0026] The beneficial effects of this invention include:

[0027] In the passivation layer preparation material provided by this invention, the first defect passivating agent is a material capable of forming a DJ phase (Dion-Jacobson) 2D (layered two-dimensional) perovskite layer or an ACI phase (Alternating Cations in the Interlayer Space) 2D perovskite layer with the perovskite component. This first defect passivating agent, acting as a grain boundary and internal defect passivating agent, has a high erosion ability on the perovskite film and can passivate defects at the film's grain boundaries and internally. The second defect passivating agent is a material capable of forming an RP phase (Ruddlesden-Popper) 2D perovskite layer with the perovskite component. This second defect passivating agent, acting as a surface passivating agent, can adhere to the surface of the perovskite film to passivate surface defects. The coordination solvent can form a coordination mesophase with one or more of the perovskite components to achieve surface reconstruction. By using the above-mentioned passivation layer preparation materials to prepare the passivation layer, it is possible not only to solve the problem of insufficient passivation of perovskite surface, grain boundary and internal defects, but also to achieve perovskite surface reconstruction and solve problems such as irregular perovskite grain morphology, fragmented grains and large roughness.

[0028] The resulting perovskite solar cells exhibit low load loss, high conversion efficiency, high open-circuit voltage, high short-circuit current, and high fill factor, as well as a long lifespan. Attached Figure Description

[0029] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0030] Figure 1 This is a schematic diagram showing the surface, grain boundaries, and internal defects of the perovskite solar cell provided in the control example of the experimental example;

[0031] Figure 2 This is a schematic diagram showing the surface, grain boundaries, and internal defects of the perovskite solar cell provided in Example 1 of the experimental case.

[0032] Figure 3 The JV curve is shown in Example 1 of the experimental case.

[0033] Figure 4 The JV curve is shown for the perovskite solar cell provided in Example 2 of the experimental case.

[0034] Icons: 1-Perovskite grain; 2-Grain boundary; 3-Surface defect; 4-Grain boundary defect; 5-Internal defect; 6-Surface reconstruction; 7-Surface passivation; 8-Grain boundary passivation; 9-Internal defect passivation. Detailed Implementation

[0035] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Where specific conditions are not specified in the embodiments, conventional conditions or conditions recommended by the manufacturer shall apply. Reagents or instruments whose manufacturers are not specified are all conventional products that can be purchased commercially.

[0036] The perovskite passivation layer, its preparation materials, and the solar cell provided by this invention will be described in detail below.

[0037] The present invention provides a passivation layer preparation material, which includes a first defect passivating agent, a second defect passivating agent, a host solvent, and a coordination solvent.

[0038] The first defect passivating agent is a material capable of forming a DJ-phase 2D perovskite layer or an ACI-phase 2D perovskite layer with the perovskite component. This first defect passivating agent serves as a passivating agent for grain boundaries and internal defects.

[0039] In some alternative embodiments, the first defect passivating agent mainly includes at least one of diamine salts and guanidine salts, which have a high erosion ability on perovskite films and can penetrate from the surface to the grain boundaries and interior to passivate defects at the grain boundaries and interior of the film. Exemplarily, the first defect passivating agent may include at least one of EDAI2 (ethylenediamine diiodide), PDAI2 (1,3-propanediamine dihydroiodate), BDAI2 (1,4-butanediamine dihydroiodate), GACl (guanidine chloride), and GABr (guanidine bromide).

[0040] In some alternative embodiments, the amount of the first defect passivating agent can be 0.1 mg / mL to 1 mg / mL, such as 0.1 mg / mL, 0.2 mg / mL, 0.3 mg / mL, 0.4 mg / mL, 0.5 mg / mL, 0.6 mg / mL, 0.7 mg / mL, 0.8 mg / mL, 0.9 mg / mL or 1 mg / mL, or other values ​​within the range of 0.1 mg / mL to 1 mg / mL.

[0041] It should be noted that if the amount of the first defect passivator is too high, it can easily lead to a significant drop in open-circuit voltage.

[0042] The second defect passivating agent is a material capable of forming an RP-phase 2D perovskite layer with the perovskite component, and the second defect passivating agent serves as a surface passivating agent.

[0043] In some optional embodiments, the second defect passivating agent mainly includes at least one of long-chain monoamine salts, aromatic monoamine salts, and long-chain guanidine salts. This type of defect passivating agent can adhere to the surface of the perovskite film to passivate surface defects. Exemplarily, the second defect passivating agent may include at least one of PEAI (phenylethyl ammonium iodide), F-PEAI (fluorophenylethyl ammonium iodide), MeO-PEAI (methoxy-phenylethylamine hydroiodide), CF3-PEAI (2-trifluoromethyl-phenylethylamine hydroiodide), OAMI (oleylamine iodide), and PhenHCl (phenylethylguanidine hydrochloride).

[0044] In some alternative embodiments, the amount of the second defect passivating agent can be from 0.1 mg / mL to 3 mg / mL, such as 0.1 mg / mL, 0.2 mg / mL, 0.5 mg / mL, 0.8 mg / mL, 1 mg / mL, 1.2 mg / mL, 1.5 mg / mL, 1.8 mg / mL, 2 mg / mL, 2.2 mg / mL, 2.5 mg / mL, 2.8 mg / mL or 3 mg / mL, or other values ​​within the range of 0.1 mg / mL to 3 mg / mL.

[0045] It should be noted that if the amount of the second defect passivator is too high, it can easily lead to a significant decrease in the fill factor.

[0046] In some alternative embodiments, the main solvent is a solvent used in conventional passivation reagents, and may exemplary include at least one of IPA (isopropanol), methanol, ethanol, n-butanol and trifluoroethanol.

[0047] In some alternative embodiments, the coordination solvent can form a coordination mesophase with one or more of the perovskite components to achieve surface reconstruction. Exemplarily, the coordination solvent may include at least one of DMF (N,N-dimethylformamide), DMSO (dimethyl sulfoxide), NMP (N-methylpyrrolidone), 2-ME (dimercaptoethanol), and GBL (γ-butyrolactone).

[0048] In some alternative embodiments, the volume of the coordination solvent does not exceed 1% of the main solvent, such as 1%, 0.8%, 0.6%, 0.4%, 0.2%, 0.1%, 0.05%, 0.02%, or 0.01% of the main solvent, or other values ​​within the range not exceeding 1%.

[0049] Continuing from the above, by using the above-mentioned passivation layer preparation materials to prepare the passivation layer, it is possible not only to solve the problem of insufficient passivation of perovskite surface, grain boundary and internal defects, but also to achieve perovskite surface reconstruction and solve problems such as irregular perovskite grain morphology, fragmented grains and large roughness.

[0050] Accordingly, the present invention provides a perovskite passivation layer, the raw materials for which are included in the above-mentioned passivation layer preparation materials.

[0051] Accordingly, the present invention also provides a method for preparing a perovskite passivation layer, comprising: coating the above-mentioned passivation layer preparation material onto the surface of a substrate and drying it.

[0052] The above coating can be exemplarily applied by spin coating, slot coating, or screen printing.

[0053] The substrate can be a perovskite light-absorbing layer.

[0054] Furthermore, the present invention also provides an application of the above-mentioned perovskite passivation layer in a solar cell.

[0055] Among them, solar cells include single-junction wide-bandgap perovskite solar cells or perovskite / silicon tandem solar cells.

[0056] Accordingly, the present invention also provides a solar cell comprising the above-described perovskite passivation layer.

[0057] The aforementioned solar cell also includes a perovskite light-absorbing layer and a charge transport layer, with a perovskite passivation layer disposed between the perovskite light-absorbing layer and the charge transport layer.

[0058] This solar cell has low load loss, high conversion efficiency, high open-circuit voltage, high short-circuit current and fill factor, and long service life.

[0059] In some optional embodiments, the solar cell includes a substrate, a hole transport layer, a perovskite light-absorbing layer, a perovskite passivation layer, an electron transport layer, a buffer layer (or a barrier layer), and an electrode layer arranged sequentially. Furthermore, grid lines and other structures may be added as needed.

[0060] In some alternative embodiments, the solar cell includes a substrate, an electron transport layer, a perovskite light-absorbing layer, a perovskite passivation layer, a hole transport layer, a buffer layer (or a blocking layer), and an electrode layer arranged sequentially. Furthermore, grid lines and other structures may be added as needed.

[0061] For example, the thickness of the hole transport layer can be 10nm to 20nm, the thickness of the perovskite light-absorbing layer can be 500nm to 1000nm, the thickness of the electron transport layer can be 10nm to 20nm, the thickness of the buffer layer or the blocking layer can be 5nm to 8nm, and the thickness of the electrode layer can be 50nm to 150nm.

[0062] For example, the perovskite junction in a solar cell can be a pin structure.

[0063] It should be noted that the structure of the solar cell can be appropriately adjusted and modified according to actual needs.

[0064] Accordingly, the present invention also provides a method for fabricating a solar cell, the method comprising the following steps: depositing a perovskite passivation layer between a perovskite light-absorbing layer and a charge transport layer.

[0065] In some alternative implementations, the method for fabricating the solar cell may refer to:

[0066] A hole transport layer is fabricated on the substrate surface;

[0067] A perovskite light-absorbing layer is prepared on the surface of the hole transport layer;

[0068] A perovskite passivation layer is prepared on the surface of the perovskite light-absorbing layer;

[0069] An electron transport layer is prepared on the surface of a perovskite passivation layer;

[0070] Prepare a buffer layer or barrier layer on the surface of the electron transport layer;

[0071] An electrode layer is prepared on the surface of the buffer layer.

[0072] In some alternative embodiments, the method for fabricating the solar cell may refer to:

[0073] An electron transport layer is prepared on the substrate surface;

[0074] A perovskite light-absorbing layer is prepared on the surface of the hole transport layer;

[0075] A perovskite passivation layer is prepared on the surface of the perovskite light-absorbing layer;

[0076] A hole transport layer is prepared on the surface of a perovskite passivation layer;

[0077] Prepare a buffer layer or barrier layer on the surface of the electron transport layer;

[0078] An electrode layer is prepared on the surface of the buffer layer.

[0079] It should be noted that this application mainly focuses on the innovation and improvement of the materials and methods for preparing the perovskite passivation layer. Therefore, the methods and processes used in the preparation of the other layers mentioned above can be referred to the relevant existing technologies, and will not be elaborated or limited here.

[0080] The features and performance of the present invention will be further described in detail below with reference to embodiments.

[0081] Example 1

[0082] This embodiment provides an inverted single-junction wide-bandgap perovskite solar cell. The perovskite junction has a pin structure. The fabrication method of this perovskite solar cell is mainly a solution method, specifically including:

[0083] S1: A hole transport layer (PTAA, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]) was prepared on a substrate with a transparent electrode by spin coating (spin coating speed of 3000 rpm and spin coating time of 20 s);

[0084] S2: A perovskite light-absorbing layer (Cs) with a band gap of 1.67 eV was prepared on the surface of the hole transport layer by spin coating (spin coating speed of 4000 rpm, spin coating time of 10 s). 0.22 FA 0.78 Pb(I 0.865 Br 0.135 )3);

[0085] S3: A passivation layer was prepared on the surface of the perovskite light-absorbing layer by spin coating (spin coating speed of 4000 rpm and spin coating time of 15 s);

[0086] The raw materials for preparing the passivation layer include a host solvent, a coordination solvent, a first defect passivating agent, and a second defect passivating agent. The first defect passivating agent is EDAI2, used at a concentration of 0.2 mg / mL; the second defect passivating agent is PhenHCl, used at a concentration of 1 mg / mL; the host solvent is IPA; and the coordination solvent is DMF, with a volume of 0.25% of the host solvent.

[0087] S4: Vacuum evaporation is applied to the surface of the passivation layer (rate is...). Prepare an electron transport layer (C60);

[0088] S5: Vacuum evaporation is used on the surface of the electron transport layer (rate is...). Prepare a buffer layer (BCP, copper bath solution);

[0089] S6: Vacuum evaporation is applied to the surface of the buffer layer (rate is...). Prepare the electrode layer (Cu).

[0090] The substrate material is FTO conductive glass; the hole transport layer has a thickness of 15nm; the perovskite light-absorbing layer has a thickness of 800nm; the electron transport layer has a thickness of 15nm; the buffer layer has a thickness of 6nm; and the electrode layer has a thickness of 150nm.

[0091] Example 2

[0092] This embodiment provides a perovskite / silicon tandem solar cell, wherein the perovskite junction has a pin structure. The fabrication method of this perovskite solar cell is mainly a one-step solution method, specifically including:

[0093] S1: A hole transport layer (PTAA) was prepared on a silicon substrate solar cell by spin coating (spin coating speed of 3000 rpm and spin coating time of 20 s).

[0094] S2: A perovskite light-absorbing layer (Cs) with a band gap of 1.67 eV was prepared on the surface of the hole transport layer by spin coating (spin coating speed of 3000 rpm, spin coating time of 15 s). 0.22 FA 0.78 Pb(I 0.865 Br 0.135 )3);

[0095] S3: A passivation layer was prepared on the surface of the perovskite light-absorbing layer by spin coating (spin coating speed of 4000 rpm and spin coating time of 15 s);

[0096] The passivation layer is prepared using a host solvent, a coordination solvent, a first defect passivating agent, and a second defect passivating agent. The first defect passivating agent is EDAI2 and GACl, with EDAI2 at a concentration of 0.2 mg / mL and GACl at a concentration of 0.25 mg / mL. The second defect passivating agent is CF3-PEAl at a concentration of 1 mg / mL. The host solvent is n-butanol, and the coordination solvent is NMP, with a volume of 0.5% of the host solvent.

[0097] S4: Vacuum evaporation is applied to the surface of the passivation layer (rate is...). Prepare an electron transport layer (C60);

[0098] S5: A barrier layer (SnO2) is prepared on the surface of the electron transport layer by atomic layer deposition (70 cycles);

[0099] S6: An electrode layer (IZO) is prepared on the surface of the barrier layer by magnetron sputtering, followed by vacuum evaporation (rate: ) Fabrication of gate lines (Ag).

[0100] The thickness of the silicon substrate is 150 μm; the hole transport layer is 15 nm thick; the perovskite light-absorbing layer is 800 nm thick; the electron transport layer is 15 nm thick; the blocking layer is 6 nm thick; and the electrode layer is 55 nm thick.

[0101] Example 3

[0102] The difference between this embodiment and Embodiment 1 is that: the first defect passivating agent is 0.15 mg / ml; the second defect passivating agent is MeO-PEAI, with a dosage of 1 mg / ml; the main solvent is n-butanol; and the coordination solvent is DMSO, with a volume of 0.4% of the main solvent.

[0103] Example 4

[0104] The difference between this embodiment and Embodiment 2 is that: the first defect passivating agent is PDAI2, and the dosage is 0.3 mg / ml; the second defect passivating agent is CF3-PEAI, and the dosage is 0.6 mg / ml; the main solvent is trifluoroethanol; and the coordination solvent is NMP, with a volume of 0.15% of the main solvent.

[0105] Comparative Example 1

[0106] The difference between this comparative example and Example 1 is that the raw materials used to prepare the passivation layer do not contain the first defect passivating agent, and this part is supplemented by the second defect passivating agent.

[0107] Comparative Example 2

[0108] The difference between this comparative example and Example 1 is that the raw materials used to prepare the passivation layer do not contain the second defect passivating agent, and this part is made up by the first defect passivating agent.

[0109] Comparative Example 3

[0110] The difference between this comparative example and Example 1 is that the raw materials used to prepare the passivation layer do not contain a coordination solvent.

[0111] Comparative Example 4

[0112] The difference between this comparative example and Example 1 is that the amount of the first defect passivating agent used is 1.2 mg / mL.

[0113] Comparative Example 5

[0114] The difference between this comparative example and Example 1 is that the amount of the second defect passivating agent used is 5 mg / mL.

[0115] Comparative Example 6

[0116] The difference between this comparative example and Example 1 is that the volume of the coordination solvent is 1.5% of the volume of the main solvent.

[0117] Comparative Example 7

[0118] The difference between this comparative example and Example 2 is that the raw materials used to prepare the passivation layer do not contain the first defect passivating agent, and this part is supplemented by the second defect passivating agent.

[0119] Comparative Example 8

[0120] The difference between this comparative example and Example 2 is that the raw materials used to prepare the passivation layer do not contain the second defect passivating agent, and this part is supplemented by the first defect passivating agent.

[0121] Comparative Example 9

[0122] The difference between this comparative example and Example 2 is that the raw materials used to prepare the passivation layer do not contain a coordinating solvent.

[0123] Comparative Example 10

[0124] The difference between this comparative example and Example 2 is that the first defect passivating agent is 0.3 mg / mL EDAI2 and 1 mg / mL GACl.

[0125] Comparative Example 11

[0126] The difference between this comparative example and Example 2 is that the amount of the second defect passivating agent used is 5 mg / mL.

[0127] Comparative Example 12

[0128] The difference between this comparative example and Example 2 is that the volume of the coordination solvent is 1.5% of the volume of the main solvent.

[0129] Test case

[0130] ① A control example is set up. The difference between the control example and Example 1 is that no perovskite passivation layer is provided between the perovskite light-absorbing layer and the electron transport layer. The surface, grain boundary, and internal defects of the perovskite solar cells in the control example and Example 1 are as follows: Figure 1 and Figure 2 As shown.

[0131] Figure 1 In the diagram, 1 represents perovskite grains, 2 represents grain boundaries, 3 represents surface defects, 4 represents grain boundary defects, and 5 represents internal defects. Figure 2 In the diagram, 6 represents surface reconstruction, 7 represents surface passivation, 8 represents grain boundary passivation, and 9 represents internal defect passivation.

[0132] Depend on Figure 1 and Figure 2 It can be seen that by setting the perovskite passivation layer provided in this application between the perovskite light-absorbing layer and the electron transport layer, on the one hand, surface reconstruction can be effectively carried out to eliminate grain fragmentation; on the other hand, surface, grain boundary and internal defects of perovskite solar cells can be effectively passivated.

[0133] ② The perovskite solar cells prepared in Examples 1-4 and Comparative Examples 1-12 were subjected to performance tests, and the results are shown in Table 1. Figure 3 and Figure 4 As shown.

[0134] in, Figure 3 The JV curve is shown for the wide-bandgap perovskite single-junction solar cell prepared in Example 1. Figure 4 The image shows the JV curve of the perovskite / silicon tandem solar cell prepared in Example 1.

[0135] Table 1 Test Results

[0136]

[0137]

[0138] By comparing Example 1 with Comparative Examples 1-6, and Example 2 with Comparative Examples 7-12, it can be seen that the raw materials for preparing the perovskite passivation layer provided by the present invention lack the first defect passivating agent, the second defect passivating agent, or the coordinating solvent, or the amount of the first defect passivating agent, the second defect passivating agent, or the coordinating solvent is inappropriate, which cannot effectively improve the passivation effect. The resulting solar cell device has poor overall performance in terms of conversion efficiency, open-circuit voltage, short-circuit current, and fill factor.

[0139] In summary, the passivation layer preparation materials provided by this invention include a first defect passivating agent that can form a DJ-phase 2D perovskite layer or an ACI-phase 2D perovskite layer with the perovskite components. This first defect passivating agent, acting as a grain boundary and internal defect passivating agent, has a high erosion ability on the perovskite film and can passivate defects at grain boundaries and within the film. The second defect passivating agent is a material that can form an RP-phase 2D perovskite layer with the perovskite components. This second defect passivating agent, acting as a surface passivating agent, can adhere to the surface of the perovskite film to passivate surface defects. The coordination solvent can form a coordination intermediate phase with one or more of the perovskite components to achieve surface reconstruction. By using the above-mentioned passivation layer preparation materials to prepare the passivation layer, not only can the problem of insufficient passivation of perovskite surface, grain boundary, and internal defects be solved, but also perovskite surface reconstruction can be achieved, solving problems such as irregular perovskite grain morphology, fragmented grains, and high roughness. The resulting perovskite solar cells exhibit low load loss, high conversion efficiency, high open-circuit voltage, high short-circuit current, and high fill factor, as well as a long lifespan.

[0140] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A passivation layer preparation material, characterized in that, The passivation layer preparation material includes a first defect passivating agent, a second defect passivating agent, a host solvent, and a coordination solvent; The first defect passivating agent is a material capable of forming a DJ phase 2D perovskite layer or an ACI phase 2D perovskite layer with the perovskite component; The second defect passivating agent is a material capable of forming an RP-phase 2D perovskite layer with the perovskite component; The coordination solvent is a solvent capable of forming a coordination intermediate phase with one or more of the perovskite components.

2. The passivation layer preparation material according to claim 1, characterized in that, The first defect passivating agent includes at least one of diamine salts and guanidine salts; And / or, the second defect passivating agent includes at least one of long-chain monoamine salts, aromatic monoamine salts, and long-chain guanidine salts.

3. The passivation layer preparation material according to claim 2, characterized in that, The first defect passivating agent includes at least one of EDAI2, PDAI2, BDAI2, GACl, and GABr; And / or, the second defect passivating agent includes at least one of PEAI, F-PEAI, MeO-PEAI, CF3-PEAI, OAMI, and PhenHCl.

4. The passivation layer preparation material according to any one of claims 1 to 3, characterized in that, The amount of the first defect passivating agent used is 0.1 mg / mL to 1 mg / mL; And / or, the amount of the second defect passivating agent used is 0.1 mg / mL to 3 mg / mL.

5. The passivation layer preparation material according to claim 1, characterized in that, The main solvent includes at least one of IPA, methanol, ethanol, n-butanol, and trifluoroethanol; And / or, the coordination solvent includes at least one of DMF, DMSO, NMP, 2-ME, and GBL.

6. The passivation layer preparation material according to claim 5, characterized in that, The volume of the coordination solvent does not exceed 1% of the volume of the bulk solvent.

7. A perovskite passivation layer, characterized in that, The raw materials for preparing the perovskite passivation layer include the passivation layer preparation materials according to any one of claims 1 to 6.

8. A method for preparing a perovskite passivation layer, characterized in that, include: The passivation layer preparation material according to any one of claims 1 to 6 is coated onto the substrate surface and dried.

9. The application of the perovskite passivation layer as described in claim 7 in a solar cell, characterized in that, The solar cells include single-junction wide-bandgap perovskite solar cells or perovskite / silicon tandem solar cells.

10. A solar cell, characterized in that, The solar cell includes the perovskite passivation layer as described in claim 7; the solar cell further includes a perovskite light-absorbing layer and a charge transport layer, wherein the perovskite passivation layer is disposed between the perovskite light-absorbing layer and the charge transport layer.

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