Light emitting diode and light emitting device

Abstract

A first electrode and an isolation layer are formed on one side of an N-type semiconductor layer of the light emitting diode, the isolation layer comprises a first part and a second part, the first part covers a light emitting area, and the second part is located below a main extension part of the first electrode. Or the second part is positioned below the main extension part and the body part. Through the arrangement of the isolation layer, the contact area of the first electrode made of the metal material and the semiconductor epitaxial laminated layer is reduced, so that the interface roughness caused by contact diffusion of the metal and the epitaxial laminated layer is reduced, and the light emitting efficiency can be improved. Meanwhile, the contact surface of the current expansion layer and the epitaxial lamination layer is flat and smooth, the mirror surface effect is good, light reflection can be improved, and the light emitting efficiency is improved. And on the other hand, the secondary extension part of the first electrode and the epitaxial lamination layer form ohmic contact, so that good ohmic contact is formed, and normal voltage of the light-emitting diode is ensured.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, and in particular to a light-emitting diode and a light-emitting device. Background Technology

[0002] The basic structure of a light-emitting diode (LED) consists of a PN junction between a P-type semiconductor and an N-type semiconductor. When a forward voltage is applied to the LED, electrons and holes recombine at the junction of the PN junction, releasing energy. This energy is emitted in the form of photons, forming light radiation.

[0003] Improving the luminous efficiency (external quantum efficiency) of LEDs has always been an important research topic in the industry. The external quantum efficiency (EQE) of an LED = internal quantum efficiency (IQE) × light extraction efficiency (LEE). The internal quantum efficiency is mainly related to the epitaxy itself. For example, the crystal quality of the epitaxial layer, the structural design of the quantum well, and the influence of P-type and N-type layer doping on the carrier injection balance will all affect the internal quantum efficiency.

[0004] External quantum efficiency (EQE) is a core performance indicator in practical LED applications. Its bottleneck lies in light extraction efficiency (LEE). Even with an IQE of 100%, photons generated internally will still experience optical losses (total internal reflection, absorption, and scattering) as they pass through epitaxial layers, electrodes, passivation layers, and other structures to reach the outside of the LED chip, preventing some light from escaping. Currently, methods to improve the light extraction efficiency of LEDs typically involve roughening the light-emitting surface and depositing anti-reflective films (including but not limited to SiN) on the chip surface. x Methods such as using single-layer or multi-layer films (TiO2, SiO2, Al2O3, etc.) to reduce reflection loss at the epitaxial-air interface and improve photon transmittance; and placing Bragg mirrors above the substrate to allow light that might otherwise be absorbed by the substrate to reach the light-emitting surface again, etc., can improve external quantum efficiency.

[0005] The above methods can improve light extraction efficiency to some extent, but there is still room for improvement for LED chips to further improve light extraction efficiency and LED luminous efficiency. Summary of the Invention

[0006] In view of the defects and shortcomings of the existing light-emitting diodes in terms of light emission, the purpose of this application is to provide a light-emitting diode and a light-emitting device to obtain a light-emitting diode product with better light emission effect and more reliable performance.

[0007] To achieve the above and other related objectives, in a first aspect, this application provides a light-emitting diode, which includes at least: A semiconductor epitaxial stack, wherein the semiconductor epitaxial stack comprises an N-type semiconductor layer, an active layer, and a P-type semiconductor layer stacked sequentially; The electrode structure includes a first electrode electrically connected to an N-type semiconductor layer and a second electrode electrically connected to a P-type semiconductor layer; the first electrode includes a body portion and an extension portion connected to the body portion, the extension portion including a main extension portion extending along a first direction and a secondary extension portion extending along a second direction, the first direction and the second direction being two intersecting directions in the top view of the light-emitting diode; on one side of the N-type semiconductor layer, the area not covered by the first electrode is the light-emitting area of ​​the light-emitting diode; The isolation layer includes a first part and a second part, the first part being located in the light-emitting area and the second part being located at least below the main extension.

[0008] This application also provides a light-emitting device, including a circuit board and a light-emitting element disposed on the circuit board, wherein the light-emitting element includes the light-emitting diode provided in this application.

[0009] Compared with the prior art, the light-emitting diode and light-emitting device provided in this application have at least the following beneficial effects: In the technical solution of this application, a first electrode and an isolation layer are formed on one side of the N-type semiconductor layer of the light-emitting diode. The isolation layer includes a first portion and a second portion. The first portion covers the light-emitting area, and the second portion is located below the main extension portion of the first electrode, or below the main extension portion and the body portion. This isolation layer configuration reduces the contact area between the first electrode, formed of metal material, and the semiconductor epitaxial stack, thereby reducing the interface roughness caused by diffusion between the metal and the epitaxial stack, and thus improving the light extraction efficiency. Simultaneously, the contact surface between the current spreading layer and the epitaxial stack is smooth and has a good mirror effect, which improves light reflection and increases the light extraction efficiency. Furthermore, the secondary extension portion of the first electrode forms an ohmic contact with the epitaxial stack, ensuring good ohmic contact between the two to guarantee normal voltage of the light-emitting diode.

[0010] In addition, the light-emitting devices provided in this application all include the light-emitting diodes provided by the above-mentioned technical solutions. Therefore, the light-emitting devices also have the above-mentioned good technical effects. Attached Figure Description

[0011] Figure 1 The diagram shown is a structural schematic of a light-emitting diode in the prior art.

[0012] Figure 2 The diagram shown is a top view of the light-emitting diode provided in Embodiment 1 of this application. For ease of illustration, only the projected outline of a portion of the structure is shown.

[0013] Figure 3Displayed as along Figure 2 The diagram shows a cross-sectional view along the AA direction.

[0014] Figure 4 The diagram shown is a schematic of the structure of a light-emitting diode in an optional example.

[0015] Figure 5 The diagram shows a schematic of a light-emitting diode as another optional example.

[0016] Figure 6 The diagram shows a schematic of a light-emitting diode as another optional example.

[0017] Figure 7 Displayed as Figure 2 The diagram shows a partially enlarged structural schematic of part P.

[0018] Figure 8 The diagram shown is a flowchart illustrating the manufacturing method of a light-emitting diode as described in Example 1.

[0019] Figure 9 The diagram shows a top view of the first structural layer formed above the ohmic contact layer after the epitaxial structure is formed and bonded to the substrate.

[0020] Figure 10 Displayed as in Figure 9 The diagram shows a top view of a structure in which an isolation layer is formed on top, and a first opening and a second opening are formed within the isolation layer.

[0021] Figure 11 The diagram shown is a schematic diagram of the structure of a light-emitting diode provided in Embodiment 2 of this application.

[0022] Figure 12 Displayed as manufacturing Figure 11 The diagram shows a top view of the structure of a light-emitting diode, where an epitaxial structure is bonded to a substrate to form an ohmic contact layer.

[0023] Figure 13 Displayed as in Figure 12 The diagram shows a top view of a structure in which an isolation layer is formed on top and a first opening is formed in the isolation layer.

[0024] Figure 14 The diagram shown is a schematic diagram of the structure of a light-emitting diode provided in Embodiment 3 of this application.

[0025] Figure 15 Displayed as manufacturing Figure 14 The diagram shows a top view of the structure of a light-emitting diode, where an epitaxial structure is bonded to a substrate to form an ohmic contact layer.

[0026] Figure 16 The diagram shown is a schematic diagram of the structure of a light-emitting diode provided in Embodiment 4 of this application.

[0027] Figure 17 Displayed as manufacturing Figure 16 When the light-emitting diode shown is used, in Figure 12 The diagram shows a top view of a structure in which an isolation layer is formed on top, and a first opening and a second opening are formed within the isolation layer.

[0028] Figure 18 The diagram shown is a schematic diagram of the structure of a light-emitting diode provided in Embodiment 5 of this application.

[0029] Figure 19 Displayed as manufacturing Figure 18 The diagram shows a top view of the structure formed on the ohmic contact layer after the epitaxial structure of the light-emitting diode is formed and bonded to the substrate.

[0030] Figure 20 This application is displayed. Figure 3 A photograph of the contact interface between the second structural layer and the isolation layer of the light-emitting diode.

[0031] Figure 21 Displayed as Figure 1 The image shows a photograph of the contact interface between the metal electrode and the ohmic contact layer in a conventional light-emitting diode.

[0032] Figure 22 The diagram shown is a schematic diagram of the light-emitting device provided in Embodiment Six of this application.

[0033] List of reference numerals in the attached diagram: 11. N-type layer; 12. Light-emitting layer; 13. P-type layer; 14. Metal electrode; 15. Contact layer; 16. Hole.

[0034] 110. Semiconductor epitaxial stack; 111. N-type semiconductor layer; 112. Active layer; 113. P-type semiconductor layer; 114. Ohmic contact layer; 1141. First contact portion; 1142. Second contact portion; 1143. Third contact portion; 115. Columnar structure; 120. Dielectric layer; 121. Through-hole; 130. Metal reflective layer; 140. Substrate; 151. First electrode; 1511. Body portion; 1512. Main extension portion; 1513. Secondary extension portion; 152. Second electrode; 153. Transparent conductive layer; 1501. First structural layer; 1502. Second structural layer; 1503. Adhesion layer; 170. Insulating protective layer; 180. Bonding layer; 190. Isolation layer; 191. First portion; 192. Second portion; 1901. First opening; 1902. Second opening.

[0035] 200, Light-emitting device; 210, Substrate; 211, Device layer; 212, Interconnect layer; 220, Light-emitting unit. Detailed Implementation

[0036] The following specific embodiments illustrate the implementation of this application. Those skilled in the art can easily understand other advantages and effects of this application from the content disclosed in this specification. This application can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this application. It should be noted that, unless otherwise specified, the following embodiments and features in the embodiments can be combined with each other.

[0037] It should be noted that the illustrations provided in the embodiments of this application are merely schematic representations of the basic concept of this application. Although the illustrations only show components relevant to this application and are not drawn according to the actual number, shape, and size of components in implementation, the shape, quantity, and proportion of each component can be arbitrarily changed in actual implementation, and the layout of the components may also be more complex. The structures, proportions, sizes, etc., shown in the accompanying drawings are only used to complement the content disclosed in the specification for those skilled in the art to understand and read, and are not intended to limit the implementation conditions of this application. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in the proportional relationships, or adjustments to the size, without affecting the effects and purposes that this application can produce, should still fall within the scope of the technical content disclosed in this application.

[0038] See Figure 1 In existing technologies, light-emitting diodes (LEDs) consist of an N-type layer 11, a light-emitting layer 12, and a P-type layer 13 stacked sequentially. To achieve a good ohmic contact, a metal electrode 14 is formed above the N-type layer 11, and a contact layer 15 is formed below the metal electrode 14. Common materials for the contact layer 15 include GaAs / AlGaInP / AlInP / AlGaAs / GaInP, while the metal electrode 14 is typically an alloy (including but not limited to Au, Ni, AuGeNi, Ti, Pt, BeAu, AuZn, etc.). Due to interdiffusion between atoms, heavy doping occurs at the contact surface between the metal electrode 14 and the contact layer 15, thereby achieving a low-resistance ohmic contact. However, as... Figure 21 As shown, the atomic diffusion process described above will form defects such as pore 16, which in turn will form a messy and rough interface, resulting in an increase in defects, an increase in light absorption, and a decrease in reflection effect. This causes light to be reflected multiple times in the epitaxial stack, and some light will be absorbed. All of these will affect the light emission efficiency of the light-emitting diode.

[0039] To address the aforementioned technical deficiencies, this application provides a light-emitting diode, which includes at least: A semiconductor epitaxial stack, wherein the semiconductor epitaxial stack comprises an N-type semiconductor layer, an active layer, and a P-type semiconductor layer stacked sequentially; The electrode structure includes a first electrode electrically connected to an N-type semiconductor layer and a second electrode electrically connected to a P-type semiconductor layer; the first electrode includes a body portion and an extension portion connected to the body portion, the extension portion including a main extension portion extending along a first direction and a secondary extension portion extending along a second direction, the first direction and the second direction being two intersecting directions in the top view of the light-emitting diode; on one side of the N-type semiconductor layer, the area not covered by the first electrode is the light-emitting area of ​​the light-emitting diode; The isolation layer includes a first part and a second part, the first part being located in the light-emitting area and the second part being located at least below the main extension.

[0040] By adopting the above technical solution, a first electrode and an isolation layer are formed on one side of the N-type semiconductor layer of the light-emitting diode. The isolation layer includes a first part and a second part. The first part covers the light-emitting area, and the second part is located below the main extension portion of the first electrode, or below the main extension portion and the body portion. This isolation layer configuration reduces the contact area between the first electrode, formed of metal material, and the semiconductor epitaxial stack, thereby reducing interface roughness caused by diffusion between the metal and the epitaxial stack, and thus improving light extraction efficiency. Simultaneously, the contact surface between the current spreading layer and the epitaxial stack is smooth and has a good mirror effect, which improves light reflection and increases light extraction efficiency. Furthermore, the secondary extension portion of the first electrode forms an ohmic contact with the epitaxial stack, ensuring good ohmic contact between the two to guarantee normal voltage of the light-emitting diode.

[0041] Optionally, the first electrode includes a first structural layer and a second structural layer, the body portion and the secondary extension portion include the first structural layer and the second structural layer, the second structural layer covers the first structural layer, and the main extension portion includes the second structural layer; or... The secondary extension includes the first structural layer and the second structural layer, with the second structural layer covering the first structural layer; the main body and the main extension include the second structural layer.

[0042] The multi-layered deposition of the electrode structure in stages facilitates the design of the positions of the isolation layer, the body, the main extension, and the secondary extension. For example, by forming the electrode structure in stages into a multi-layered structure, an isolation layer can be placed below the main extension of the first electrode, while no isolation layer can be placed below the body and the secondary extension. Alternatively, an isolation layer can be placed below the body and the main extension of the first electrode, while no isolation layer can be placed below the secondary extension. This allows the body and the secondary extension to form ohmic contacts with the semiconductor material layer, improving electrical performance.

[0043] Optionally, the second portion of the isolation layer is also formed below the body portion.

[0044] The isolation layer can be further disposed below the main body, so that the metal layer of the main body does not directly contact the semiconductor material layer, but contacts the isolation layer, avoiding the formation of a rough interface with the semiconductor material layer and forming a smooth and flat interface with the isolation layer, thereby further improving the light reflection effect and the light emission effect.

[0045] Optionally, the second portion of the isolation layer is also located in the peripheral region of the secondary extension surrounding the first structural layer, and the second structural layer covers the second portion.

[0046] An isolation layer is further disposed around the first structural layer in the outer region of the secondary extension and is covered by the second structural layer, so that the metal layer of the second structural layer of the secondary extension does not directly contact the semiconductor material layer, but contacts the isolation layer, forming a smooth and flat interface, which further improves the light reflection effect and further improves the light emission effect.

[0047] Optionally, in the top view direction of the light-emitting diode, the projected outline of the first structural layer falls within the projected outline of the second structural layer.

[0048] The projection outline of the first structural layer falls within the projection outline of the second structural layer, ensuring that the second structural layer can cover the first structural layer, thereby ensuring the continuity between the two and the electrical stability.

[0049] Optionally, the minimum distance between adjacent contour boundaries of the first structural layer and the second structural layer is greater than or equal to 0.5 μm.

[0050] The limitation of the minimum distance between the adjacent contour boundaries of the first and second structural layers further ensures their continuity and electrical stability.

[0051] Optionally, the projected profile of the first structural layer falls within the projected profile of the isolation layer.

[0052] The area enclosed by the projected outline of the isolation layer is the exposed semiconductor layer structure. The projected outline of the first structural layer falls within the projected outline of the isolation layer, which can ensure the electrical connection between the first structural layer and the semiconductor material layer, such as ensuring that the two form an ohmic contact, so as to ensure the stability of the electrical performance of the light-emitting diode.

[0053] Optionally, the projection of the second structural layer overlaps with the projection of the isolation layer.

[0054] There is an overlap between the projection of the second structural layer and the projection of the isolation layer. First, the second structural layer can completely cover the first structural layer, ensuring their continuity. Second, the portion of the second structural layer that covers the isolation layer can form a smooth interface with the isolation layer, which is beneficial for further improving light reflection and increasing the light extraction efficiency of the light-emitting diode.

[0055] Optionally, the thickness of the first portion of the isolation layer is less than the thickness of the second portion.

[0056] The thickness of the first part in the light-emitting region is less than that of the second part, which helps to improve the light transmittance of the light-emitting region and enhance the light emission effect. The thickness of the second part ensures that the metal of the electrode structure does not diffuse into the semiconductor layer, thereby ensuring a smooth interface between the electrode structure and the isolation layer and improving the light reflection effect.

[0057] Optionally, an adhesive layer is further provided between the first structural layer and the second structural layer.

[0058] Optionally, the adhesion layer is a single-layer or multi-layer structure formed from any one or more of IZO, ITO, Ti, Cr and Ni.

[0059] Optionally, the thickness of the adhesion layer is between 10 Å and 500 Å.

[0060] The aforementioned adhesive layer can be, for example, an ITO layer, an IZO layer, Ti, Ni, Cr, etc., which can enhance the adhesion between the first structural layer and the second structural layer, ensuring the structural stability of both. At the same time, the limited thickness ensures that it does not affect the light emission of the LED.

[0061] Optionally, the N-type semiconductor layer has an ohmic contact layer on one side, and the ohmic contact layer is located between the secondary extension and the N-type semiconductor layer.

[0062] Optionally, the ohmic contact layer is a GaAs layer, an AlInP layer, an AlGaInP layer, or an AlGaAs layer.

[0063] When the ohmic contact layer is a GaAs layer, the secondary extension covers the aforementioned ohmic contact layer. On the one hand, this ensures good ohmic contact between the metal electrode and the semiconductor layer, reducing the operating voltage of the light-emitting diode. On the other hand, it reduces the coverage area of ​​the GaAs layer, thereby reducing its light absorption phenomenon and improving the light extraction efficiency of the light-emitting diode.

[0064] Optionally, the N-type semiconductor layer has an ohmic contact layer on one side, the ohmic contact layer is located below the first electrode and forms an ohmic contact with the secondary extension, and the body portion and the main extension portion have the isolation layer between them and the ohmic contact layer.

[0065] The aforementioned configuration of the ohmic contact layer ensures good ohmic contact between the metal electrode and the semiconductor layer, reducing the operating voltage of the light-emitting diode. On the other hand, it reduces the contact area between the metal electrode and the ohmic contact layer, thereby reducing the rough interface caused by metal diffusion. Instead, a smooth interface is formed between the metal electrode and the isolation layer, which reduces the light absorption phenomenon at the rough interface and increases the light reflection effect at the smooth interface. Therefore, it is beneficial to improve the light extraction efficiency of the light-emitting diode.

[0066] The light-emitting diode also includes: A dielectric layer is formed on the side of the P-type semiconductor layer away from the active layer, and a via is formed in the dielectric layer; A metal reflective layer is formed on the side of the dielectric layer away from the P-type semiconductor layer and fills the via. A bonding layer is formed on the side of the metal reflective layer away from the dielectric layer; A substrate is formed on the side of the bonding layer away from the metal reflective layer.

[0067] This application also provides a light-emitting device, which includes a circuit board and a light-emitting element disposed on the circuit board, wherein the light-emitting element includes the light-emitting diode provided in this application.

[0068] The light-emitting device includes the light-emitting device described above in this application, and therefore also has better light emission effect, as well as good voltage performance.

[0069] The following examples will now be used to provide a detailed description. For ease of understanding, the growth direction of the semiconductor epitaxial stack is defined as growing from bottom to top, with the substrate located below the semiconductor epitaxial stack and the electrode structure located above the semiconductor epitaxial stack.

[0070] Example 1

[0071] This embodiment provides a light-emitting diode (LED), see [link]. Figure 2 and Figure 3 The light-emitting diode includes a semiconductor epitaxial stack 110, which can be any material capable of emitting light under voltage, such as GaN, GaAs, AlGaN, AlInP, AlGaInP, or AlGaP. Similarly, as... Figure 3 As shown, the semiconductor epitaxial stack 110 includes an N-type semiconductor layer 111, an active layer 112, and a P-type semiconductor layer 113.

[0072] The N-type semiconductor layer 111, active layer 112, and P-type semiconductor layer 113 may include semiconductor material layers of group III-V elements, such as Al, Ga, In, and P. The N-type semiconductor layer 111 may include N-type impurities such as Si, Ge, and Sn, while the P-type semiconductor layer 113 may include P-type impurities such as Mg, Sr, Ba, and Zn. The active layer 112 provides the region for electron-hole recombination and emits light. Different materials can be selected depending on the emission wavelength. The active layer 112 is made of aluminum gallium indium phosphide (AlGaInP) series materials, emitting red, yellow, or orange light. The active layer 112 can be a single heterostructure (SH), a double heterostructure (DH), a double-sided double heterostructure (DDH), or a multi-quantum well (MQW). The active layer 112 comprises a well layer and a barrier layer, wherein the barrier layer has a larger band gap than the well layer. By adjusting the composition ratio of the semiconductor material in the active layer 112, it is desired to radiate light of different wavelengths. In this embodiment, the active layer 112 radiates light in the 550nm–900nm wavelength range, such as red, yellow, and orange light, and further, radiates red light. The active layer 112 is a material layer that provides electroluminescent radiation, such as aluminum gallium indium phosphide (AGaInP) or aluminum gallium arsenide (AGaAs), more preferably AGaInP, which can be a single quantum well or a multi-quantum well.

[0073] In this embodiment, the active layer 112 may optionally be a multi-quantum-well layer, comprising alternating AlGaInP quantum well layers and AlGaInP quantum barrier layers, wherein the Al content in the AlGaInP quantum well layers and AlGaInP quantum barrier layers is different. The multi-quantum-well layer may comprise alternating stacked AlGaInP quantum well layers and AlGaInP quantum barrier layers for 1 to 200 cycles. As an example, the multi-quantum-well layer comprises alternating stacked AlGaInP quantum well layers and AlGaInP quantum barrier layers for 5 cycles.

[0074] Similarly, refer to Figure 3 The light-emitting diode may further include an ohmic contact layer 114 formed on the side of the N-type semiconductor layer 111 away from the active layer 112. This ohmic contact layer 114 may be a heavily doped AlGaAs layer, GaAs layer, AlInP layer, GaInP layer, or AlGaInP layer, etc. The dopant may be N-type impurities such as Si, Ge, or Sn, with a doping concentration greater than or equal to 1.0E+19 atom / cm³. 3 Furthermore, greater than or equal to 1.0E+20atom / cm3 Optionally, the thickness of the ohmic contact layer 114 is between 10 nm and 500 nm, and more specifically, between 50 nm and 500 nm, 100 nm and 500 nm, 50 nm and 400 nm, 100 nm and 200 nm, etc.

[0075] Similarly, refer to Figure 3 The light-emitting diode in this embodiment also includes an electrode structure, which includes a first electrode 151 and a second electrode 152. The first electrode 151 is formed on the side of the N-type semiconductor layer 111 away from the active layer 112 and is electrically connected to the N-type semiconductor layer 111. Specifically, as Figure 2 and Figure 3 As shown, the first electrode 151 includes a body portion 1511 and an extension portion connected to the body portion 1511. Specifically, the extension portion includes portions along a first direction (i.e., Figure 2 The main extension portion 1512 extends from the main body portion 1511 in the horizontal direction, and along the second direction (i.e., Figure 2 A secondary extension portion 1513 extends from the main body portion 1511 and the main extension portion 1512 in the vertical direction. The provision of the extension portion of the first electrode 151 can improve the current diffusion effect and uniformity on the N-type semiconductor layer 111 side. In an optional embodiment, the main extension portion 1512 and the secondary extension portion 1513 are formed into a finger-like structure, and the first electrode 151 may include one or more of the main extension portion 1512 and the secondary extension portion 1513.

[0076] In this embodiment, the light-emitting diode has a vertical structure, with one side of the N-type semiconductor layer 111 being the light-emitting side. Furthermore, the area not covered by the first electrode 151 is the specific light-emitting area. For example... Figure 3 As shown, in this embodiment, the ohmic contact layer 114 is located below the first electrode 151. Specifically, as... Figure 3 As shown, the ohmic contact layer 114 includes a first contact portion 1141 located below the body portion 1511, a second contact portion 1142 located below the main extension portion 1512, and a third contact portion 1143 located below the secondary extension portion 1513.

[0077] Similarly, refer to Figure 3 The light-emitting diode in this embodiment further includes an isolation layer 190, which is located on the side of the N-type semiconductor layer 111 away from the active layer 112. In optional examples, the isolation layer 190 can be SiO2, TiO2, Al2O3, or SiN. xThe isolation layer 190 is a single-layer or multi-layer structure formed of one or more materials such as ITO, IZO, etc., or a multi-layer structure formed of ITO, IZO, etc., and one or more of the aforementioned materials. Optionally, the isolation layer 190 includes a first portion 191 covering the light-emitting area of ​​the light-emitting diode and a second portion 192 covering the second contact portion 1142. The second portion 192 of the isolation layer 190 does not cover the first contact portion 1141 below the main body portion 1511 and the third contact portion 1143 below the secondary extension portion 1513. The second portion 192 of the isolation layer 190 below the main extension portion 1512 forms a smooth and flat interface between the main extension portion 1512 and the second portion 192, reducing light absorption and increasing light reflection, thereby increasing the light-emitting efficiency of the light-emitting diode. In addition, the first portion 191 of the light-emitting area can provide insulation protection for the light-emitting diode and also increase light transmittance, thereby improving the light-emitting efficiency of the light-emitting diode.

[0078] In an optional example, to further ensure the light extraction efficiency of the LED and reduce the impact of the first portion 191 of the isolation layer 190 on light extraction, the first portion 191 is thinned so that its thickness is less than the thickness of the second portion 192. This ensures the insulating protection of the isolation layer 190 for the LED while reducing its impact on light extraction, thereby improving the LED's light extraction efficiency. Optionally, the thickness of the isolation layer 190 (i.e., the thickness of the second portion 192) is less than or equal to 1000 nm, for example, between 500 nm~1000 nm, 200 nm~500 nm, 100 nm~800 nm, 100 nm~200 nm, 100 nm~300 nm, etc. The thickness of the thinned first portion 191 is less than or equal to 500 nm, for example, between 100 nm~200 nm, 100 nm~300 nm, 200 nm~500 nm. In another optional example, such as... Figure 3 As shown, the first portion 191 is thinned until the first portion 191 is removed, exposing the surface of the semiconductor epitaxial stack 110 in the light region.

[0079] Optionally, the first electrode 151 is formed as a multilayer structure, for example... Figure 2 and Figure 3 As shown, the first electrode 151 includes a first structural layer 1501 and a second structural layer 1502. The first structural layer 1501 and the second structural layer 1502 can be structural layers formed in stages, and each structural layer can be a single-layer or multi-layer metal structure. Figure 3As shown, in this embodiment, the secondary extension 1513 includes a first structural layer 1501 and a second structural layer 1502. Specifically, at the main body 1511 and the secondary extension 1513, the first structural layer 1501 covers the first contact portion 1141 and the third contact portion 1143. Further, as... Figure 3 As shown, the first structural layer 1501 is located on the upper surfaces of the first contact portion 1141 and the third contact portion 1143, and the second structural layer 1502 is located above the first structural layer 1501; at the main extension portion 1512, the second structural layer 1502 is formed above the isolation layer 190. Optionally, at the body portion 1511 and the secondary extension portion 1513, a second portion 192 of the isolation layer 190 is also formed around the first structural layer 1501, and the second structural layer 1502 covers the second portion 192 and the first structural layer 1501.

[0080] The second structural layer 1502 at the main body 1511, the main extension 1512, and the secondary extension 1513 forms a continuous structure to ensure the structural continuity and integrity of the first electrode 151. The second structural layer 1502 at the main body 1511 and the secondary extension 1513 forms a continuous structure with the first structural layer 1501, thereby ensuring the structural continuity, stability, and electrical performance stability of both. The first structural layer 1501 and the second structural layer 1502 can be any one or more of Au, Ni, AuGeNi, Ti, Pt, BeAu, and AuZn, and they can have the same or different material composition layers.

[0081] In a further optional example, to increase the adhesion between the first structural layer 1501 and the second structural layer 1502, an adhesion layer 1503 can be provided between them. This adhesion layer 1503 can be a single-layer or multi-layer structure formed from any one or more of IZO, ITO, Ti, Cr, and Ni. The thickness of the adhesion layer 1503 is between 10 Å and 500 Å, and more specifically, between 50 Å and 300 Å, 50 Å and 100 Å, 20 Å and 100 Å, or 20 Å and 50 Å. This material layer does not excessively absorb light and does not affect the light reflection of the first electrode 151.

[0082] Optional examples, such as Figure 7As shown, in the top view of the light-emitting diode (from the light-emitting surface downwards), the projected outline E1 of the first structural layer 1501 of the first electrode 151 falls within the projected outline E3 of the isolation layer 190. Simultaneously, the projected outline E1 of the first structural layer 1501 of the first electrode 151 falls within the projected outline E2 of the second structural layer 1502. The projected area of ​​the second structural layer 1502 overlaps with the projected area of ​​the isolation layer 190; that is, the second structural layer 1502 covers not only the first structural layer 1501 but also the isolation layer 190 surrounding the first structural layer 1501. Although the projected outline of the third contact portion 1143 of the ohmic contact layer 114 is not shown in the figure, refer to... Figure 3 It is understandable that the projected outline E1 of the first structural layer 1501 falls within the projected outline of the third contact portion 1143. The arrangement of the aforementioned projected outlines E1, E2, and E3 allows the second structural layer 1502 to completely cover the first structural layer 1501, thereby ensuring that the two can form a continuous structure and thus guaranteeing the stability of their electrical performance. Simultaneously, an isolation layer 190 is formed at the main extension portion 1512 and at the periphery of the first structural layer 1501 of the body portion 1511 and the secondary extension portion 1513. (Comparison) Figure 21 The rough and disordered interface between the metal electrode 14 and the contact layer 15 shown in the prior art is as follows: Figure 20 As shown, in this embodiment, the first electrode 151 specifically forms a smooth and flat interface between the second structural layer 1502 of the main body portion 1511 and the main extension portion 1512 and the isolation layer 190, which increases the light reflection effect and improves the light emission effect of the light-emitting diode.

[0083] Furthermore, such as Figure 7 As shown, the distance (i.e., the minimum distance between E1 and E2) between the projected contour E1 of the first structural layer 1501 and the projected contour E2 of the second structural layer 1502 is ≥0.5μm, and further, 0.5μm≤D≤3μm. For example, D=0.8μm, D=1.5μm, D=1μm, D=2μm, D=2.5μm, D=3μm, etc. This distance limitation ensures that the edges of the first structural layer 1501 and the second structural layer 1502 have at least the aforementioned interval. Therefore, the second structural layer 1502 can completely cover and enclose the first structural layer 1501, achieving structural continuity and electrical stability between the two.

[0084] In the optional examples, refer to Figure 3To further increase the light extraction efficiency of the light-emitting diode, in this embodiment, after forming the first structural layer 1501 of the first electrode 151, the light-emitting surface outside the region of the first electrode 151 is roughened to form a roughened surface, thereby increasing the light extraction rate. Specifically, etching is performed from the ohmic contact layer 114 outside the region of the first electrode 151 until the surface of the exposed N-type semiconductor layer 111 is reached, so that the surface of the N-type semiconductor layer 111 is roughened, thereby increasing the light extraction rate.

[0085] Refer again Figure 3 The light-emitting diode in this embodiment also includes a substrate 140, and a semiconductor epitaxial stack 110 is bonded to the substrate 140 from one side of the P-type semiconductor layer 113. A bonding layer 180 is formed between the semiconductor epitaxial stack 110 and the substrate 140, and the bonding layer 180 bonds the semiconductor epitaxial stack 110 and the substrate 140 together. The second electrode 152 is located on the side of the substrate 140 away from the semiconductor epitaxial stack 110 and is electrically connected to the P-type semiconductor layer 113.

[0086] The substrate 140 can be an insulating substrate, a semiconductor substrate, a metal substrate, etc. The substrate 140 can be a silicon (Si) substrate, a germanium (Ge) substrate, a silicon carbide (SiC) substrate, a gallium nitride (GaN) substrate, an aluminum nitride (AlN) substrate, a gallium phosphide (GaP) substrate, or a gallium arsenide (GaAs) substrate, etc., and in this embodiment, a silicon substrate is preferred. Optionally, the bonding layer 180 is a metal bonding layer, such as Cu, Al, Sn, Au, Ag, Pb, Ti, Ni, In, Pt, or W. A dielectric layer 120 and a metal reflective layer 130 are also formed between the bonding layer 180 and the semiconductor epitaxial stack 110, with the metal reflective layer 130 formed between the dielectric layer 120 and the bonding layer 180. Specifically, a dielectric layer 120 is formed on the side of the P-type semiconductor layer 113 away from the active layer 112, a metal reflective layer 130 is formed on the side of the dielectric layer 120 away from the P-type semiconductor layer 113, and a bonding layer 180 covers the metal reflective layer 130. In an optional embodiment, a via 121 is formed in the dielectric layer 120, and the metal reflective layer 130 fills the via 121, thereby achieving electrical connection with the P-type semiconductor layer 113. Further, a transparent conductive layer 153 is disposed on the P-type semiconductor layer 113 at the bottom of the via 121, forming an ohmic contact with the P-type semiconductor layer 113. The transparent conductive layer 153 can be a material layer such as ITO. Furthermore, to prevent current concentration near the electrode, the via 121 and the first electrode 151 are not aligned vertically, and are staggered, thereby increasing current diffusion and improving the light-emitting effect.

[0087] The dielectric layer 120 can be a single-layer structure formed from one of SiO2, SiN, SiON, TiO2, etc., or a multilayer structure formed from any combination of these. Optionally, it can be a DBR structure with reflective properties, such as a DBR structure formed from SiO2 and TiO2. Optionally, the metal reflective layer can be an alloy of one or more of Ag, Al, Cu, Sn, Au, etc. In this embodiment, the dielectric layer 120 is a DBR structure, the metal reflective layer 130 is an Ag mirror, and the dielectric layer 120 and the metal reflective layer 130 form a total internal reflection structure. This increases the reflection of light radiated from the active layer 112 and enhances the light extraction efficiency of the light-emitting diode. In addition, as mentioned above, both the metal reflective layer 130 and the bonding layer 180 are metal layers, so the adhesion between them is good, which is beneficial to improving the reliability of the light-emitting diode. On the other side of the substrate 140 opposite to the semiconductor epitaxial stack 110, a back gold layer is formed. This back gold layer can serve as a second electrode 152 electrically connected to the P-type semiconductor layer 113.

[0088] Refer again Figure 3 The light-emitting diode in this embodiment also includes an insulating protective layer 170. This insulating protective layer 170 covers the sidewalls of the light-emitting diode and, furthermore, forms a continuous structure with the isolation layer 190 above the N-type semiconductor layer 111. This insulating protective layer 170 may, for example, be SiO2. x SiN x SiO x N y Al2O3, TiO x Any one or more combinations thereof. The insulating protective layer 170 and the isolation layer 190 work together to effectively prevent the light-emitting diode, especially the semiconductor epitaxial stack 110, from contamination or damage by external moisture, impurities, etc., ensuring the performance reliability and durability of the light-emitting diode. In addition, the insulating protective layer 170 can also achieve insulation between the first electrode 151 and the second electrode 152, preventing defects such as short circuits between them and improving the reliability of the light-emitting diode.

[0089] This embodiment also provides a method for manufacturing the aforementioned light-emitting diode. For example... Figure 8 As shown, the manufacturing method includes the following steps: Step S101: Provide a semiconductor epitaxial stack, wherein the N-type semiconductor side of the semiconductor epitaxial stack includes an ohmic contact layer, and bond the semiconductor epitaxial stack to the substrate; Step S102: A first structural layer of the first electrode is formed above the ohmic contact layer, wherein the first structural layer is formed at the body portion and the secondary extension portion of the first electrode; Step S103: Roughen the N-type semiconductor layer outside the first electrode region from the ohmic contact layer side; Step S104: An isolation layer is formed on one side of the roughened N-type semiconductor layer, and a first opening and a second opening are formed in the isolation layer to expose the first structural layer; Step S105: A second structural layer is formed above the first structural layer and above the isolation layer of the main extension portion to form the first electrode.

[0090] Step S101 can be referred to Figure 3 For example, a growth substrate is first provided, and an N-type semiconductor layer 111, an active layer 112, and a P-type semiconductor layer 113 are sequentially grown on the growth substrate. Then, a semiconductor epitaxial stack 110 is bonded to the substrate 140 from the P-type semiconductor layer 113 side via a bonding layer 180. Afterward, the growth substrate is removed to expose the N-type semiconductor layer 111, specifically, to expose the ohmic contact layer 114 on one side of the N-type semiconductor layer 111. In embodiments, when the ohmic contact layer 114 is an AlGaAs layer, an AlInP layer, a GaInP layer, or an AlGaInP layer, the ohmic contact layer 114 is formed as a continuous structure.

[0091] After that, as Figure 9 As shown, a first structural layer 1501 of the first electrode 151 is formed above the ohmic contact layer 114. Specifically, the first structural layer 1501 is formed at the body portion 1511 and the secondary extension portion 1513 of the first electrode 151, but not at the main extension portion 1512. After forming the first structural layer 1501, the N-type semiconductor layer 111 outside the region of the first electrode 151 (specifically, the body portion 1511, the main extension portion 1512, and the secondary extension portion 1513) is roughened. Specifically, the ohmic contact layer 114 outside the region of the first electrode 151 is etched until the N-type semiconductor layer 111 is exposed to achieve roughening of the N-type semiconductor layer 111, i.e., the light-emitting surface.

[0092] After that, as Figure 10 As shown, in Figure 9 An isolation layer 190 is formed on one side of the N-type semiconductor layer 111 in the structure shown. A first opening 1901 and a second opening 1902 are formed in the isolation layer 190. The first opening 1901 exposes the first structural layer 1501 at the secondary extension portion 1513, and the second opening 1902 exposes the first structural layer 1501 at the body portion 1511. (Refer to...) Figure 7 The projected contour E1 of the first structural layer 1501 falls within the projected contour E3 of the first opening 1901, thereby ensuring that the first opening 1901 can fully expose the first structural layer 1501. Combined with... Figure 3The projected profile E3 of the first opening 1901 falls within the projected profile of the ohmic contact layer 114, that is, the projected profile E3 of the first opening 1901 falls between the projected profile E1 of the first structural layer 1501 and the projected profile of the ohmic contact layer 114. Afterwards, metallic material continues to be deposited in the region of the first electrode 151, as can be referred to... Figure 3 A second structural layer 1502 is formed, which covers the first structural layer 1501 at the main extension portion 1512 and the secondary extension portion 1513, as well as the isolation layer 190 at the main extension portion 1512 of the first electrode 151, thus forming the first electrode 151. The isolation layer 190 covered by the second structural layer 1502 is the second portion 192, and the uncovered portion located in the light-emitting area of ​​the light-emitting diode is the first portion 191.

[0093] In an optional example, before forming the second structural layer 1502, it also includes... Figure 10 The step involves forming an adhesion layer 1503 over the structure shown. For example, one or more material layers selected from IZO, ITO, Ti, Cr, Ni, etc., may be formed. After forming the first electrode 151, the step further includes removing the portion of the adhesion layer 1503 not covered by the second structural layer 1502. Further, the step includes thinning the first portion 191 of the isolation layer 190 exposed outside the first electrode 151 (i.e., the light-emitting region) so that its thickness is less than the thickness of the second portion 192, or further removing the first portion 191. The thinned first portion 191 enhances light transmittance and improves the light extraction efficiency of the light-emitting diode.

[0094] In an optional example, after bonding the semiconductor epitaxial stack 110 to the substrate 140 in step S101 above, the following step S102 is performed: an isolation layer 190 is formed on one side of the N-type semiconductor layer 111 of the semiconductor epitaxial stack 110, and a first opening 1901 and a second opening 1902 are formed in the isolation layer 190 to expose a portion of the ohmic contact layer 114, that is, to expose the third contact portion 1143 and the first contact portion 1141 of the ohmic contact layer 114. Then, step S103 is performed: a metal layer is formed in the first opening 1901 and the second opening 1902 to form a first structural layer 1501 of the first electrode 151. The first structural layer 1501 forms a part of the body portion 1511 and the secondary extension portion 1513 of the first electrode 151. Then, step S104 is performed: a second structural layer 1502 is formed above the first structural layer 1501 and above the isolation layer 190 at the main extension portion 1512 to form the first electrode 151. Then, step S105 is performed: the N-type semiconductor layer 111 outside the region of the first electrode 151 is roughened from the side of the ohmic contact layer 114. For example, ICP etching is used to sequentially etch the isolation layer 190 and the ohmic contact layer 114 until a layer is formed above the N-type semiconductor layer 111. Figure 6 The roughened pattern of the columnar structure 115 is shown. At this time, the surface of the columnar structure 115 is covered with an isolation layer 190, and the surface between the columnar structures is an N-type semiconductor layer 111.

[0095] In one optional example of this embodiment, with Figure 3 The difference between the LEDs shown is that, as Figure 4 As shown, the first structural layer 1501 is formed only at the secondary extension 1513, and the isolation layer 190 is formed above the ohmic contact layer 114 at the main body 1511 and the main extension 1512. The second structural layer 1502 is formed above the first structural layer 1501 and above the isolation layer 190 at the main body 1511 and the main extension 1512.

[0096] In one optional example of this embodiment, with Figure 3 and Figure 4 The difference between the LEDs shown is that, as Figure 5 As shown, a patterned structure is formed on the side of the P-type semiconductor layer 113 of the light-emitting diode away from the active layer 112. For example, when the outermost layer of the current spreading layer P-type semiconductor layer 113 away from the active layer 112 is a current spreading layer formed by a P-type GaP layer, a portion of the current spreading layer is etched away to pattern the current spreading layer, and the remaining portion serves as the portion that forms an electrical connection with the second electrode 152. Since the current spreading layer formed by the GaP layer is removed, the light absorption phenomenon caused by it can be reduced, thereby improving the light extraction efficiency of the light-emitting diode.

[0097] Example 2

[0098] This embodiment provides a light-emitting diode, such as Figure 11 As shown, the light-emitting diode also includes a semiconductor epitaxial stack 110, which can be any material that can emit light under voltage, such as GaN, GaAs, AlGaN, AlInP, AlGaInP, or AlGaP. The semiconductor epitaxial stack 110 includes an N-type semiconductor layer 111, an active layer 112, and a P-type semiconductor layer 113.

[0099] Unlike other embodiments, such as Figure 11 and Figure 12As shown, in this embodiment, the ohmic contact layer 114 only includes the third contact portion 1143 disposed below the secondary extension portion 1513. When the ohmic contact layer is a GaAs material layer, its intrinsic wavelength is around 870nm, and it has strong absorption of light below 870nm. The above-mentioned arrangement in this embodiment reduces the coverage area of ​​the GaAs material layer, thereby reducing its light absorption phenomenon and improving the light extraction efficiency of the light-emitting diode. The first electrode 151 forms an ohmic contact with the third contact portion 1143 through the secondary extension portion 1513, ensuring the electrical performance and normal operating voltage of the light-emitting diode. Figure 11 As shown, the first structural layer 1501 at the secondary extension 1513 not only covers the surface of the third contact portion 1143, but also further wraps around the sidewall of the third contact portion 1143, thereby further increasing the ohmic contact area and helping to ensure the normal operating voltage of the light-emitting diode. The body portion 1511 and the main extension portion 1512 contact the second part 192 of the isolation layer 190 below, forming a smooth and flat interface, enhancing the light reflection effect and improving the light extraction efficiency of the light-emitting diode.

[0100] The remaining configuration of the light-emitting diode is the same as in other embodiments, and will not be described again here.

[0101] This embodiment also provides a method for manufacturing the above-mentioned light-emitting diode. Unlike other embodiments, this method includes the following steps: Step S101: Provide a semiconductor epitaxial stack, wherein an ohmic contact layer is formed on the N-type semiconductor side of the semiconductor epitaxial stack, and the semiconductor epitaxial stack is bonded to the substrate; Step S102: Etch the ohmic contact layer to form a patterned ohmic contact layer; Step S103: An isolation layer is formed on one side of the N-type semiconductor layer, and a first opening is formed in the isolation layer to expose the ohmic contact layer; Step S104: A metal layer is formed in the first opening to form a first structural layer of the first electrode, the first structural layer being formed at the secondary extension of the first electrode; Step S105: A second structural layer is formed above the first structural layer and above the isolation layer at the main extension and the secondary extension to form the first electrode.

[0102] After forming the semiconductor epitaxial stack 110 and bonding the semiconductor epitaxial stack 110 to the substrate 140, the ohmic contact layer 114 is patterned, such as... Figure 12 As shown, the remaining portion of the ohmic contact layer 114 is removed, forming a patterned structure (e.g., a finger structure) retaining only the third contact portion 1143. Simultaneously, the surface of the N-type semiconductor layer 111 is further roughened. Then, as... Figure 13As shown, an isolation layer 190 is formed above the ohmic contact layer 114 and the N-type semiconductor layer 111. A first opening 1901 is formed in the isolation layer 190 to expose the aforementioned third contact portion 1143 of the ohmic contact layer 114. Then, a first structural layer 1501 is formed at the first opening 1901, forming a portion of the secondary extension portion 1513. Subsequently, a second structural layer 1502 of the first electrode 151 is formed by depositing metal material. This second structural layer 1502 covers the first structural layer 1501 at the secondary extension portion 1513 and the second portion 192 of the isolation layer 190 at the positions of the body portion 1511 and the main extension portion 1512, ultimately forming the first electrode 151. Steps identical to those in other embodiments will not be described again here.

[0103] In an optional example, as described above, after bonding the semiconductor epitaxial stack 110 to the substrate 140 in step S101 and etching the ohmic contact layer 114 in step S102 to form a patterned ohmic contact layer 114, the roughening of the N-type semiconductor layer 111 is not performed as described above. Instead, steps S103, S104, and S105 are performed directly. After forming the first electrode 151 in step S105, the N-type semiconductor layer 111 outside the region of the first electrode 151 is roughened from the side of the ohmic contact layer 114. Similarly, the ICP method can be used to sequentially etch the isolation layer 190 and the ohmic contact layer 114 until a columnar roughening pattern is formed above the N-type semiconductor layer 111 (see reference). Figure 6 At this point, the surface of the columnar structure is covered with an isolation layer 190, and the surface between the columnar structures is an N-type semiconductor layer 111.

[0104] Example 3

[0105] The light-emitting diode also includes a semiconductor epitaxial stack 110, which can be any material that can emit light under voltage, such as GaN, GaAs, AlGaN, AlInP, AlGaInP, or AlGaP. The semiconductor epitaxial stack 110 includes an N-type semiconductor layer 111, an active layer 112, and a P-type semiconductor layer 113.

[0106] Unlike other embodiments, such as Figure 14 and Figure 15 As shown, in this embodiment, the ohmic contact layer 114 includes a first contact portion 1141 located below the body portion 1511 and a third contact portion 1143 located below the secondary extension portion 1513. No ohmic contact layer 114 is provided below the main extension portion 1512, and an isolation layer 190 (specifically, the second portion 192 of the isolation layer 190) is formed below the body portion 1511 and the main extension portion 1512.

[0107] The configuration of the remaining structures can be referred to the descriptions of other embodiments, and will not be repeated here.

[0108] This embodiment also provides the above-described method for manufacturing a light-emitting diode. The difference from other embodiments is that, after forming the semiconductor epitaxial stack 110 and bonding it to the substrate 140, when patterning the ohmic contact layer 114 on one side of the N-type semiconductor layer 111, as follows... Figure 15 As shown, the remaining portion of the ohmic contact layer 114 is removed, retaining the first contact portion 1141 and the third contact portion 1143 in the area where the main body portion 1511 and the secondary extension portion 1513 are located. Then, the same procedure can be followed. Figure 13 An isolation layer 190 is formed above the ohmic contact layer 114 and the N-type semiconductor layer 111. A first opening 1901 is formed in the isolation layer 190 to expose the third contact portion 1143. A first structural layer 1501 is formed at the first opening 1901, which forms part of the secondary extension portion 1513. Subsequently, a second structural layer 1502 of the first electrode 151 is formed by depositing metal material. The second structural layer 1502 covers the first structural layer 1501 at the secondary extension portion 1513 and the second portion 192 of the isolation layer 190 at the positions of the body portion 1511 and the main extension portion 1512, thus finally forming the first electrode 151.

[0109] The steps that are the same as those in the other embodiments will not be repeated here.

[0110] Example 4

[0111] This embodiment provides a light-emitting diode, such as Figure 16 As shown, the light-emitting diode also includes a semiconductor epitaxial stack 110, which can be any material that can emit light under voltage, such as GaN, GaAs, AlGaN, AlInP, AlGaInP, or AlGaP. The semiconductor epitaxial stack 110 includes an N-type semiconductor layer 111, an active layer 112, and a P-type semiconductor layer 113.

[0112] Unlike other embodiments, such as Figure 16As shown, in this embodiment, the ohmic contact layer 114 includes a first contact portion 1141 located below the body portion 1511 and a third contact portion 1143 located below the secondary extension portion 1513. No ohmic contact layer 114 is provided below the main extension portion 1512 of the first electrode 151, and no isolation layer 190 is provided below the body portion 1511. The first structural layer 1501 of the first electrode 151 is located at both the secondary extension portion 1513 and the body portion 1511. This first structural layer 1501 covers the surfaces of the first contact portion 1141 and the third contact portion 1143, and further, can cover the sidewalls of the first contact portion 1141 and the third contact portion 1143, forming good ohmic contact with both the first contact portion 1141 and the third contact portion 1143. The interface between the second structural layer 1502 at the main extension portion 1512 and the isolation layer 190 is a smooth and flat interface, which can increase light reflection and improve light extraction efficiency.

[0113] This embodiment also provides the above-described method for manufacturing a light-emitting diode. After forming a semiconductor epitaxial stack 110 and bonding the semiconductor epitaxial stack 110 to the substrate 140, the patterning of the ohmic contact layer 114 on one side of the N-type semiconductor layer 111 can also be referred to... Figure 15 Remove the remaining portion of the ohmic contact layer 114, retaining the first contact portion 1141 and the third contact portion 1143 in the area where the main body portion 1511 and the secondary extension portion 1513 are located. Then, as... Figure 17 As shown, an isolation layer 190 is formed above the ohmic contact layer 114 and the N-type semiconductor layer 111. A first opening 1901 is formed in the isolation layer 190 to expose the first structural layer 1501 at the secondary extension portion 1513, and a second opening 1902 is formed to expose the first structural layer 1501 at the body portion 1511. The first structural layer 1501 is formed at the first opening 1901 and the second opening 1902, and this first structural layer 1501 forms a portion of both the body portion 1511 and the secondary extension portion 1513. Subsequently, a metal material is deposited to form the second structural layer 1502 of the first electrode 151. This second structural layer 1502 covers the first structural layer 1501 at the body portion 1511 and the secondary extension portion 1513, as well as the second portion 192 of the isolation layer 190 at the location of the main extension portion 1512, ultimately forming the first electrode 151.

[0114] The steps that are the same as those in the other embodiments will not be repeated here.

[0115] Example 5

[0116] This embodiment also provides a light-emitting diode, such as... Figure 18As shown, the light-emitting diode also includes a semiconductor epitaxial stack 110, which can be any material that can emit light under voltage, such as GaN, GaAs, AlGaN, AlInP, AlGaInP, or AlGaP. The semiconductor epitaxial stack 110 includes an N-type semiconductor layer 111, an active layer 112, and a P-type semiconductor layer 113.

[0117] The remaining configuration of the light-emitting diode is the same as in other embodiments and will not be repeated here. The difference lies in that, in this embodiment, as... Figure 18 As shown, the ohmic contact layer 114 has a first contact portion 1141 located below the body portion 1511, a second contact portion 1142 located below the main extension portion 1512, and a third contact portion 1143 located below the secondary extension portion 1513. Figure 18 As shown, the first structural layer 1501 forms a part of the secondary extension 1513, covering the third contact portion 1143 below the secondary extension 1513. That is, the first structural layer 1501 is located on the upper surface of the third contact portion 1143 and simultaneously covers the sidewall of the third contact portion 1143, forming a good ohmic contact with the third contact portion 1143. An isolation layer 190 (specifically, the second part 192 of the isolation layer 190) is formed below the body portion 1511 and the main extension 1512, covering the first contact portion 1141 and the second contact portion 1142. The first electrode 151 forms an ohmic contact with the third contact portion 1143 through the secondary extension 1513, ensuring normal voltage of the light-emitting diode. The interface between the second structural layer 1502 at the body portion 1511 and the main extension 1512 and the isolation layer 190 is a smooth and flat interface, which increases light reflection and improves light extraction efficiency. The remaining structural configurations can be referred to in the descriptions of other embodiments, and will not be repeated here.

[0118] This embodiment also provides the above-described method for manufacturing a light-emitting diode. The difference from other embodiments is that, after forming the semiconductor epitaxial stack 110 and bonding it to the substrate 140, when patterning the ohmic contact layer 114 on one side of the N-type semiconductor layer 111, as follows... Figure 19 As shown, the remaining portion of the ohmic contact layer 114 is removed, retaining the first contact portion 1141, the second contact portion 1142, and the third contact portion 1143 in the area containing the main body portion 1511, the main extension portion 1512, and the secondary extension portion 1513. Then, the same procedure can be followed. Figure 13An isolation layer 190 is formed above the ohmic contact layer 114 and the N-type semiconductor layer 111, and a first opening 1901 is formed in the isolation layer 190 to expose the first structural layer 1501. Then, the first structural layer 1501 is formed at the first opening 1901, forming a part of the secondary extension 1513. Subsequently, a second structural layer 1502 of the first electrode 151 is formed by depositing metal material. This second structural layer 1502 covers the first structural layer 1501 at the secondary extension 1513 and the second portion 192 of the isolation layer 190 at the positions of the body portion 1511 and the main extension 1512, ultimately forming the first electrode 151.

[0119] The steps that are the same as those in the other embodiments will not be repeated here.

[0120] Example 6

[0121] This embodiment provides a light-emitting device, such as... Figure 22 As shown, the light-emitting device 200 includes a substrate 210 and a light-emitting unit 220 located above the substrate 210. A device layer 211 and an interconnect layer 212 are formed on the substrate 210. The device layer 211 includes complementary metal-oxide-semiconductor (CMOS) devices or TFT devices, which can constitute the driving circuit and control circuit of the light-emitting diode unit. The light-emitting unit is located above the substrate 210 and electrically connected to the interconnect layer 212. In this embodiment, the light-emitting unit includes any one or more light-emitting diodes provided in Embodiments 1 to 5 of this application. The light-emitting diode is electrically connected to the interconnect layer 212 through a first electrode 151 and a second electrode 152. The interconnect layer 212 is also electrically connected to the devices in the device layer 211, thereby realizing the electrical connection between the light-emitting diode and the devices, and the light-emitting diode can be controlled through the devices. Since the light-emitting device includes the light-emitting diode of this application, it also has good light emission performance.

[0122] The light-emitting device 200 may also include a housing to protect the light-emitting device from external contamination or damage, while not affecting the light emission effect of the light-emitting device, thereby improving the light emission effect and display effect of the light-emitting device.

[0123] In summary, the light-emitting diode and light-emitting device provided in this application effectively overcome the various shortcomings of the prior art and have high industrial application value.

[0124] The above embodiments are merely illustrative of the principles and effects of this application and are not intended to limit this application. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this application. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this application should still be covered by the claims of this application.

Claims

1. A light-emitting diode, characterized in that, At least including: A semiconductor epitaxial stack, wherein the semiconductor epitaxial stack comprises an N-type semiconductor layer, an active layer, and a P-type semiconductor layer stacked sequentially; The electrode structure includes a first electrode electrically connected to an N-type semiconductor layer and a second electrode electrically connected to a P-type semiconductor layer; the first electrode includes a body portion and an extension portion connected to the body portion, the extension portion including a main extension portion extending along a first direction and a secondary extension portion extending along a second direction, the first direction and the second direction being two intersecting directions in the top view of the light-emitting diode; on one side of the N-type semiconductor layer, the area not covered by the first electrode is the light-emitting area of ​​the light-emitting diode; The isolation layer includes a first part and a second part, the first part being located in the light-emitting area and the second part being located at least below the main extension.

2. The light-emitting diode according to claim 1, characterized in that, The first electrode includes a first structural layer and a second structural layer; the body portion and the secondary extension portion include the first structural layer and the second structural layer, with the second structural layer covering the first structural layer; the main extension portion includes the second structural layer; or... The secondary extension includes the first structural layer and the second structural layer, with the second structural layer covering the first structural layer; the main body and the main extension include the second structural layer.

3. The light-emitting diode according to claim 1, characterized in that, The second portion of the isolation layer is also formed below the body portion.

4. The light-emitting diode according to claim 2, characterized in that, The second portion of the isolation layer is also located in the peripheral region of the secondary extension surrounding the first structural layer, and the second structural layer covers the second portion.

5. The light-emitting diode according to claim 2, characterized in that, In the top view of the light-emitting diode, the projected outline of the first structural layer falls within the projected outline of the second structural layer.

6. The light-emitting diode according to claim 5, characterized in that, The minimum distance between adjacent contour boundaries of the first structural layer and the second structural layer is greater than or equal to 0.5 μm.

7. The light-emitting diode according to claim 5, characterized in that, The projected outline of the first structural layer falls within the projected outline of the isolation layer.

8. The light-emitting diode according to claim 5, wherein the projection of the second structural layer and the projection of the isolation layer have an overlapping area.

9. The light-emitting diode according to claim 3, characterized in that, The thickness of the first portion of the isolation layer is less than the thickness of the second portion.

10. The light-emitting diode according to claim 2 or 4, characterized in that, An adhesive layer is also provided between the first structural layer and the second structural layer.

11. The light-emitting diode according to claim 10, characterized in that, The adhesion layer is a single-layer or multi-layer structure formed from any one or more of IZO, ITO, Ti, Cr and Ni.

12. The light-emitting diode according to claim 10, characterized in that, The thickness of the adhesion layer is between 10 Å and 500 Å.

13. The light-emitting diode according to claim 1, characterized in that, The N-type semiconductor layer has an ohmic contact layer on one side, and the ohmic contact layer is located between the secondary extension and the N-type semiconductor layer.

14. The light-emitting diode according to claim 13, characterized in that, The ohmic contact layer is a GaAs layer, an AlInP layer, an AlGaInP layer, or an AlGaAs layer.

15. The light-emitting diode according to claim 3, characterized in that, The N-type semiconductor layer has an ohmic contact layer on one side, which is located below the first electrode and forms an ohmic contact with the secondary extension. The body portion and the main extension are separated from the ohmic contact layer by the isolation layer.

16. The light-emitting diode according to claim 1, characterized in that, Also includes: A dielectric layer is formed on the side of the P-type semiconductor layer away from the active layer, and a via is formed in the dielectric layer; A metal reflective layer is formed on the side of the dielectric layer away from the P-type semiconductor layer and fills the via. A bonding layer is formed on the side of the metal reflective layer away from the dielectric layer; A substrate is formed on the side of the bonding layer away from the metal reflective layer.

17. A light-emitting device, characterized in that, It includes a circuit board and a light-emitting element disposed on the circuit board, wherein the light-emitting element comprises a light-emitting diode as described in any one of claims 1 to 16.

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