MEMS infrared light source, MEMS packaging structure and MEMS infrared light source packaging method
By employing a suspended resistive structure and a nano-radiative layer design in the MEMS infrared light source, the problem of high power consumption in MEMS infrared light sources has been solved, resulting in a more efficient, smaller, and lower-cost infrared light source.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- GOERTEK MICROELECTRONICS CO LTD
- Filing Date
- 2026-01-26
- Publication Date
- 2026-05-26
AI Technical Summary
Existing MEMS infrared light sources generate infrared light through thermal radiation, resulting in high power consumption and affecting working efficiency.
Employing a suspended resistive structure and a nano-radiative layer design, heat dissipation is reduced by forming cavities and support layers on the substrate, and a nano-radiative layer is set on the electrode resistive layer to enhance the emissivity of infrared light.
It effectively reduces the power consumption of MEMS infrared light sources, improves working efficiency, and reduces device size and manufacturing costs.
Smart Images
Figure CN122079062A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of MEMS packaging technology, and more specifically, to a MEMS infrared light source, a MEMS packaging structure, and a MEMS infrared light source packaging method. Background Technology
[0002] In existing technologies, MEMS (Micro-Electro-Mechanical Systems) infrared light sources are typically used to improve the detection efficiency of gases such as refrigerants. However, current MEMS infrared light sources usually generate infrared light through thermal radiation, resulting in high power consumption and severely impacting their operating efficiency.
[0003] Therefore, a new technical solution is needed to solve the above-mentioned technical problems. Summary of the Invention
[0004] One objective of this application is to provide a new technical solution for a MEMS infrared light source, a MEMS packaging structure, and a MEMS infrared light source packaging method.
[0005] According to a first aspect of this application, a MEMS infrared light source is provided, wherein the MEMS infrared light source comprises: A substrate having a cavity formed therein; A support layer includes a fixing part and a bearing part. The fixing part is connected to the substrate. The bearing part has a through hole through the thickness direction of the support layer. A cantilever part is formed between adjacent through holes. The bearing part also includes a support part. The support part is connected to the fixing part through the cantilever part, and the support part is disposed opposite to the cavity. An electrode resistance layer is disposed on the side of the support portion away from the cavity; the electrode resistance layer includes a connecting portion and a heating portion, the connecting portion is connected to the support portion, and the connecting portion is disposed around the heating portion; A nano-radiation layer is disposed on the side of the heating part away from the support part.
[0006] Optionally, the heating part includes a hollow part and a connecting part. The hollow part is annular and is connected to the connecting part through the connecting part.
[0007] Optionally, the support layer includes a silicon dioxide thin film layer and a silicon nitride thin film layer, wherein the silicon dioxide thin film layer is connected to the substrate; The heating element includes a molybdenum layer and a platinum layer, wherein the molybdenum layer is connected to the silicon nitride thin film layer and the platinum layer is connected to the nano-radiation layer.
[0008] Optionally, the nano-radiative layer is a black silicon structure.
[0009] Optionally, it also includes an air barrier wall, which is disposed on the side of the support layer away from the substrate, and an isolation groove is formed between the air barrier wall, the electrode resistance layer, and the nano-radiation layer, and the isolation groove communicates with the through hole portion; The thickness of the air barrier is greater than the thickness of the nano-radiation layer.
[0010] According to a second aspect of this application, a MEMS packaging structure is provided, comprising a substrate and a MEMS infrared light source as described in any of the first aspects, wherein the MEMS infrared light source is disposed on the substrate.
[0011] Optionally, it further includes a detector and a filter, the detector being disposed on the substrate and the filter being disposed on the detector; The substrate includes a signal processing circuit, which is electrically connected to the MEMS infrared light source and the detector.
[0012] Optionally, it further includes a light aperture layer connected to the substrate. The light aperture layer includes an entrance light aperture and an exit light aperture. The entrance light aperture is disposed opposite to the MEMS infrared light source, and the exit light aperture is disposed opposite to the filter.
[0013] Optionally, the system further includes a pore layer, which is disposed on the side of the optical aperture layer away from the substrate, and an air chamber is formed between the pore layer and the optical aperture layer; the pore layer is provided with pores for communicating the air chamber with the outside.
[0014] According to a third aspect of the present invention, a MEMS infrared light source packaging method is provided, applied to a MEMS infrared light source as described in any one of the first aspects, wherein the MEMS infrared light source packaging method includes: A support layer is formed on the substrate; An electrode resistance layer is formed on the support layer; A nano-radiative layer is formed on the electrode resistance layer.
[0015] Optionally, providing a support layer on the substrate includes: Silicon dioxide is grown on the substrate using a thermal oxidation process to form a silicon dioxide thin film layer; Silicon nitride is grown on the silicon dioxide thin film layer using a chemical vapor deposition process to form a silicon nitride thin film layer; The silicon dioxide thin film layer and the silicon nitride thin film layer constitute the support layer.
[0016] Optionally, after growing silicon nitride on the silicon dioxide thin film layer using a chemical vapor deposition process to form the silicon nitride thin film layer, and before forming the electrode resistance layer on the support layer, the process further includes: Polycrystalline silicon is grown on the silicon nitride thin film layer using a thermal oxidation process to form the first layer; The first layer is processed using a patterning process to expose at least a portion of the silicon nitride thin film layer; An aluminum electrode is deposited on the exposed silicon nitride thin film layer using an aluminum electrode deposition process to form a first electrical connection. Polycrystalline silicon is grown on the first layer and the first electrical connection using a chemical vapor deposition process to form a second layer; Silicon dioxide is grown on the second layer using a thermal oxidation process to form the third layer; An etching process is used to process the central regions of the first layer, the second layer, and the third layer to expose at least a portion of the silicon nitride thin film layer; The first electrical connection, the second layer, and the third layer together form an air barrier wall.
[0017] Optionally, forming an electrode resistance layer on the support layer includes: A molybdenum layer was grown on the silicon nitride thin film using a sputtering process. A platinum layer is grown on the molybdenum layer using a sputtering process; The edge regions of the molybdenum layer and the platinum layer are processed by etching to expose at least a portion of the silicon nitride thin film layer and form isolation trenches; The molybdenum layer and the platinum layer are processed using a patterning process to form a heating element; The support layer is processed by etching to form through-holes and cantilever sections; An aluminum electrode is deposited on the support layer using an aluminum electrode deposition process and a patterning process to form a connection. The connecting portion and the heating portion together form the electrode resistance layer, and the connecting portion is electrically connected to the first electrical connecting portion.
[0018] Optionally, forming a nano-radiative layer on the electrode resistive layer includes: Polycrystalline silicon is grown on the electrode resistance layer using a chemical vapor deposition process to form a polycrystalline silicon layer; The polycrystalline silicon layer is processed using a plasma treatment process to form a nano-radiative layer with a black silicon structure.
[0019] Optionally, after forming a nano-radiative layer on the electrode resistive layer, the method further includes: The side of the substrate that is away from the support layer is treated using a thinning process; An etching process is used to treat the central region of the substrate to expose at least a portion of the silicon dioxide thin film layer and form a cavity; The substrate is fixed to the substrate using an anodic bonding process.
[0020] The MEMS infrared light source in this application, by forming a cavity on the substrate and providing through holes on the support layer, enables a suspended resistive structure after the electrode resistance layer is placed on the support layer. This effectively slows down the dissipation of heat generated by the electrode resistance layer and suppresses the heat transfer power consumption of the MEMS infrared light source. Furthermore, this application also provides a nano-radiative layer on the electrode resistance layer to enhance the emissivity of the MEMS infrared light source 10 to infrared light, further reducing the power consumption of the MEMS infrared light source. Therefore, the working efficiency of the MEMS infrared light source is effectively improved.
[0021] Other features and advantages of this application will become clear from the following detailed description of exemplary embodiments of this application with reference to the accompanying drawings. Attached Figure Description
[0022] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments of the present application and, together with their description, serve to explain the principles of the present application.
[0023] Figure 1 This is an exploded view of a MEMS infrared light source in one embodiment of this application.
[0024] Figure 2 This is a schematic diagram of the heating element in one embodiment of this application.
[0025] Figure 3 This is a cross-sectional view of a MEMS infrared light source in one embodiment of this application.
[0026] Figure 4 This is a schematic diagram of the structure of a MEMS infrared light source in one embodiment of this application.
[0027] Figure 5 yes Figure 4 Top view.
[0028] Figure 6 This is an exploded view of a MEMS packaging structure in one embodiment of this application.
[0029] Figure 7 This is a schematic diagram of the structure of the aperture layer in one embodiment of this application.
[0030] Figure 8 This is a flowchart of a MEMS infrared light source packaging method in one embodiment of this application.
[0031] Figure 9 This is a schematic diagram of a structure in which silicon dioxide is grown on a substrate in one embodiment of this application.
[0032] Figure 10 This is a schematic diagram of a structure in which silicon nitride is grown on a silicon dioxide thin film layer in one embodiment of this application.
[0033] Figure 11 This is a schematic diagram of a structure in which polycrystalline silicon is grown on a silicon nitride thin film layer in one embodiment of this application.
[0034] Figure 12 This is a schematic diagram of a structure in one embodiment of the present application, in which the first layer is processed to expose at least a portion of the silicon nitride thin film layer.
[0035] Figure 13 This is a schematic diagram of an aluminum electrode deposited on an exposed silicon nitride thin film layer in one embodiment of this application.
[0036] Figure 14 This is a schematic diagram of a structure in which polycrystalline silicon is grown on the first layer and the first electrical connection portion in one embodiment of this application.
[0037] Figure 15 This is a schematic diagram of the structure in one embodiment of the present application where silicon dioxide is grown on the second layer.
[0038] Figure 16 This is a schematic diagram of a structure in one embodiment of the present application, in which the central regions of the first layer, the second layer, and the third layer are processed to expose at least a portion of the silicon nitride thin film layer.
[0039] Figure 17 This is a schematic diagram of a structure in one embodiment of the present application in which a molybdenum layer is grown on a silicon nitride thin film.
[0040] Figure 18 This is a schematic diagram of a structure in which a platinum layer is grown on a molybdenum layer in one embodiment of this application.
[0041] Figure 19 This is a schematic diagram of a structure in one embodiment of the present application, in which the edge regions of the molybdenum layer and the platinum layer are processed to expose at least a portion of the silicon nitride thin film layer.
[0042] Figure 20 This is a schematic diagram of a structure in one embodiment of the present application, showing the processing of a molybdenum layer and a platinum layer to form a heating element.
[0043] Figure 21 This is a schematic diagram of a structure in which polycrystalline silicon is grown on an electrode resistance layer in one embodiment of this application.
[0044] Figure 22This is a schematic diagram of a polycrystalline silicon layer being processed to form a black silicon structure in one embodiment of this application.
[0045] Figure 23 This is a schematic diagram of the structure of the support layer being processed to form a through-hole portion and a cantilever portion in one embodiment of this application.
[0046] Figure 24 This is a schematic diagram of an aluminum electrode deposited on a support layer in one embodiment of this application.
[0047] Figure 25 This is a schematic diagram of the structure of processing the side of the substrate away from the support layer in one embodiment of this application.
[0048] Figure 26 This is a schematic diagram of a structure in one embodiment of the present application, in which the central region of the substrate is processed to expose at least a portion of the silicon dioxide thin film layer.
[0049] Figure 27 This is a schematic diagram of a structure in one embodiment of this application, showing the substrate fixed to the base plate.
[0050] Explanation of reference numerals in the attached figures: 10. MEMS infrared light source; 1. Substrate; 101. Cavity; 2. Support layer; 21. Fixing part; 22. Bearing part; 221. Through hole part; 222. Cantilever part; 223. Support part; 201. Silicon dioxide thin film layer; 202. Silicon nitride thin film layer; 3. Electrode resistance layer; 31. Connecting part; 32. Heating part; 321. Hollowed-out part; 322. Connecting part; 301. Molybdenum layer; 302. Platinum layer; 4. Nano-radiation layer; 401, polycrystalline silicon layer; 5. Air barrier wall; 500. First layer; 501. First electrical connection; 502. Second layer; 503. Third layer; 6. Isolation trench; 7. Second electrical connection part; 20. Substrate; 2001. Signal processing circuit; 30. Detector; 40. Optical filters; 50. Light hole layer; 5001. Light entrance hole; 5002. Light exit hole; 60. Porous layer; 6001. Pores. Detailed Implementation
[0051] Various exemplary embodiments of this application will now be described in detail with reference to the accompanying drawings. It should be noted that, unless otherwise specifically stated, the relative arrangement, numerical expressions, and values of the components and steps set forth in these embodiments do not limit the scope of this application.
[0052] The embodiments of this application will now be described in detail, examples of which are illustrated in the accompanying drawings. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.
[0053] The terms "first" and "second" in the specification and claims of this application may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise stated, "multiple" means two or more. Furthermore, "and / or" in the specification and claims indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.
[0054] In the description of this application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.
[0055] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.
[0056] It should be noted that similar labels and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be discussed further in subsequent figures.
[0057] According to one embodiment of this application, a MEMS infrared light source 10 is provided. The MEMS infrared light source 10 includes a substrate 1, a support layer 2, an electrode resistance layer 3, and a nano-radiation layer 4. The substrate 1 has a cavity 101 formed therein. The support layer 2 includes a fixing part 21 and a supporting part 22. The fixing part 21 is connected to the substrate 1. The supporting part 22 has a through hole 221 extending along the thickness direction of the support layer 2. A cantilever part 222 is formed between adjacent through holes 221. The supporting part 22 also includes a support portion. 223, the support portion 223 is connected to the fixing portion 21 through the cantilever portion 222, and the support portion 223 is disposed opposite to the cavity 101; the electrode resistance layer 3 is disposed on the side of the support portion 223 away from the cavity 101; the electrode resistance layer 3 includes a connecting portion 31 and a heating portion 32, the connecting portion 31 is connected to the support portion 223, and the connecting portion 31 is disposed around the heating portion 32; the nano-radiation layer 4 is disposed on the side of the heating portion 32 away from the support portion 223.
[0058] Specifically, such as Figure 1 , Figure 3 and Figure 4 As shown in the embodiment of this application, the substrate 1 can be a silicon substrate 1, serving as the bottom layer of the entire MEMS infrared light source 10, providing support for the support layer 2, the electrode resistance layer 3, and the nano-radiation layer 4. A cavity 101 is provided on the substrate 1, and the cavity 101 can be disposed opposite to the support portion 223 of the support layer 2. The support layer 2 further includes a fixing portion 21 and a cantilever portion 222, and the support portion 223 can be connected to the fixing portion 21 through the cantilever portion 222.
[0059] Therefore, since the input power of the MEMS infrared light source 10 is related to the heat transfer power consumption generated by heat dissipation through solid contact, the embodiment of this application, through the cooperation of the support layer 2 and the cavity 101, enables the electrode resistance layer 3 and the nano-radiation layer 4 located on the support portion 223 to form a suspended resistive structure together with the substrate 1 through the support layer 2. This not only reduces the contact area between the support layer 2 and the substrate 1, but also reduces the heat conduction channel between the support layer 2 and the substrate 1, thereby effectively slowing down the heat dissipation generated by the electrode resistance layer 3, suppressing the heat transfer power consumption of the MEMS infrared light source 10, that is, effectively reducing the power consumption of the MEMS infrared light source 10.
[0060] Furthermore, the electrode resistance layer 3 described in this embodiment includes a connecting portion 31 disposed at the edge region of the electrode resistance layer 3 and a heating portion 32 disposed at the center region of the electrode resistance layer 3. The connecting portion 31 can be an aluminum electrode, so that the electrode resistance layer 3 can be electrically connected to the second electrical connection portion 7 of the MEMS infrared light source 10 through the connecting portion 31, thereby enabling the MEMS infrared light source 10 to be powered by an external circuit and drive the heating portion 32 to radiate infrared light outward.
[0061] Therefore, since the input power of the MEMS infrared light source 10 is also related to the emissivity of the infrared light emitted by the MEMS infrared light source 10, this embodiment of the application, by disposing the nano-radiation layer 4 on the heating part 32, enables the nano-radiation layer 4 to reduce the reflection of infrared light when the heating part 32 radiates infrared light outward. That is, the nano-radiation layer 4 enhances the absorption rate of infrared light by the MEMS infrared light source 10. Furthermore, according to Kirchhoff's thermal radiation theory, when an object is in thermal equilibrium, its infrared emissivity is equal to its absorption rate in the corresponding band. Therefore, the emissivity of infrared light by the MEMS infrared light source 10 is also enhanced, thereby further reducing the power consumption of the MEMS infrared light source.
[0062] Therefore, the embodiments of this application mitigate the heat dissipation generated by the electrode resistance layer 3 through the suspended resistive structure, and enhance the emissivity of the MEMS infrared light source 10 to infrared light through the nano-radiative layer 4, effectively reducing the power consumption of the MEMS infrared light source 10 and improving the working efficiency of the MEMS infrared light source 10.
[0063] The nano-radiation layer 4 refers to a solid thin film layer with a nanometer thickness that can efficiently convert absorbed light or heat energy into infrared radiation and release it.
[0064] In one embodiment, the heating part 32 includes a hollow part 321 and a connector 322. The hollow part 321 is annular and is connected to the connecting part 31 through the connector 322.
[0065] Specifically, such as Figure 2 As shown, the embodiment of this application uses a circular cutout 321, which is both axially symmetrical and centrally symmetrical, to raise the potential at the center of the heating part 32, allowing Joule heat to concentrate at the center of the device. This not only effectively improves the radiation efficiency of the electrode resistance layer 3, but also significantly reduces the stress generated during the processing of the electrode resistance layer 3.
[0066] In one embodiment, the support layer 2 includes a silicon dioxide thin film layer 201 and a silicon nitride thin film layer 202, wherein the silicon dioxide thin film layer 201 is connected to the substrate 1; the heating part 32 includes a molybdenum layer 301 and a platinum layer 302, wherein the molybdenum layer 301 is connected to the silicon nitride thin film layer 202, and the platinum layer 302 is connected to the nano-radiation layer 4.
[0067] Specifically, such as Figure 1 As shown, due to the compressive stress of the silicon dioxide thin film layer 201 and the tensile stress of the silicon nitride thin film layer 202, the present application embodiment can balance the stress in the support layer 2 by adjusting the thickness of the silicon dioxide thin film layer 201 and the silicon nitride thin film layer 202, thereby ensuring the mechanical stability of the MEMS infrared light source 10 forming the suspended resistive structure and extending the performance and service life of the MEMS infrared light source 10.
[0068] Furthermore, since molybdenum has good adhesion to silicon nitride, and platinum has good electrical and thermal conductivity, the present application embodiment connects the molybdenum layer 301 to the silicon nitride thin film layer 202, and the platinum layer 302 to the nano-radiation layer 4, which not only effectively ensures the radiation performance of the electrode resistance layer 3, but also further improves the mechanical stability of the MEMS infrared light source 10.
[0069] In one embodiment, the nano-radiative layer 4 is a black silicon structure.
[0070] Specifically, such as Figure 1 and Figure 5 As shown, in this embodiment of the application, a polycrystalline silicon layer 401 is covered on the electrode resistor layer 3, and then the polycrystalline silicon layer 401 is processed by a plasma processing process to bombard the polycrystalline silicon layer 401 into a structure in which several cones converge, that is, to form a black silicon structure containing multiple nanocones. In this way, not only is the absorption path of the MEMS infrared light source 10 for infrared light increased and the reflectivity of infrared light reduced, but also the nanoradiative layer 4 of the black silicon structure can enhance the absorption rate of the MEMS infrared light source 10 for infrared light and enhance the emissivity of the MEMS infrared light source 10 for infrared light, thus further reducing the power consumption of the MEMS infrared light source 10 and improving the working efficiency of the MEMS infrared light source 10.
[0071] In addition, the thickness of the nano-enhancing layer 4 can be 10nm~500nm to ensure the enhancement effect of the nano-enhancing layer 4 on the absorption rate and emissivity of infrared light, thereby reducing the power consumption of the MEMS infrared light source 10.
[0072] Preferably, the thickness of the nano-reinforcing layer 4 is 200nm~400nm, so as to improve the absorption rate of infrared light to more than 90% through the 200nm~400nm nanocone structure.
[0073] In other embodiments, the nano-reinforcing layer 4 can also be other structures, as long as they can enhance the absorption rate and emissivity of infrared light. Those skilled in the art can make selections according to actual needs, and this application does not impose specific limitations here.
[0074] In one embodiment, the MEMS infrared light source 10 further includes an air barrier wall 5, which is disposed on the side of the support layer 2 away from the substrate 1, and an isolation groove 6 is formed between the air barrier wall 5, the electrode resistance layer 3, and the nano-radiation layer 4; the isolation groove 6 communicates with the through hole portion 221; wherein the thickness of the air barrier wall 5 is greater than the thickness of the nano-radiation layer 4.
[0075] Specifically, during the operation of the MEMS infrared light source 10, the input power of the MEMS infrared light source 10 is equal to the sum of the emissivity of the infrared light radiated by the MEMS infrared light source 10, the heat transfer power loss generated by heat dissipation through solid contact, and the convection power loss generated by the airflow around the MEMS infrared light source 10 carrying away heat. Therefore, in order to avoid the airflow around the MEMS infrared light source 10 carrying away too much heat, such as... Figure 3 and Figure 5 As shown, in this embodiment of the application, an air barrier wall 5 with a thickness greater than that of the nano-radiation layer 4 is provided on the side of the support layer 2 away from the substrate 1. That is, by surrounding the electrode resistor layer 3 with an air barrier wall 5, the air barrier wall 5 can raise the air above the nano-radiation layer 4 and suppress the air convection of the MEMS infrared light source 10, thereby effectively reducing the convection power consumption caused by the heat carried away by the flowing air around the MEMS infrared light source 10.
[0076] Furthermore, since the MEMS infrared light source 10 is often directly opposite the light entrance hole 5001 of the air chamber of the MEMS packaging structure in the MEMS packaging structure, the embodiments of this application can also connect the air barrier wall 5 to the light entrance hole 5001, so that the MEMS infrared light source 10 can become a sealed structure, thereby further reducing the air convection of the MEMS infrared light source 10.
[0077] According to another embodiment of this application, a MEMS packaging structure is provided, the MEMS packaging structure including a substrate 20 and a MEMS infrared light source 10 of this application, the MEMS infrared light source 10 being disposed on the substrate 20.
[0078] Specifically, such as Figure 6 As shown, since the MEMS infrared light source 10 in this embodiment only includes a substrate 1, a support layer 2, an electrode resistance layer 3, and a nano-radiation layer 4, it has a smaller size than the MEMS infrared light source 10 in the prior art, and the fewer devices further reduce the fabrication cost of the MEMS infrared light source 10.
[0079] Furthermore, since the support layer 2 can firmly connect the substrate 1 and the electrode resistor layer 3 together, the reliability and stability of the MEMS infrared light source 10 are further guaranteed after the MEMS infrared light source 10 is disposed on the substrate 20.
[0080] Therefore, since the embodiment of this application slows down the heat dissipation generated by the electrode resistance layer 3 through the floating resistor structure, and enhances the emissivity of the MEMS infrared light source 10 to infrared light through the nano-radiation layer 4, the power consumption of the MEMS infrared light source 10 is reduced and the working efficiency of the MEMS infrared light source 10 is improved. Thus, by setting the MEMS infrared light source 10 in the MEMS packaging structure, the embodiment of this application can further broaden the application scope of the MEMS packaging structure by setting the MEMS infrared light source 10 in the MEMS packaging structure. The MEMS infrared light source 10 has the advantages of small size, low cost, high efficiency, low power consumption and high reliability.
[0081] In one embodiment, the MEMS packaging structure further includes a detector 30 and a filter 40, the detector 30 being disposed on the substrate 20, and the filter 40 being disposed on the detector 30; the substrate 20 includes a signal processing circuit 2001, the signal processing circuit 2001 being electrically connected to the MEMS infrared light source 10 and the detector 30.
[0082] Specifically, such as Figure 6 As shown, this application electrically connects the MEMS infrared light source 10 and the detector 30 through the signal processing circuit 2001, effectively ensuring the detection effect of the MEMS packaging structure.
[0083] In one embodiment, the MEMS packaging structure further includes a light aperture layer 50, which is connected to the substrate 20. The light aperture layer 50 includes an entrance light aperture 5001 and an exit light aperture 5002. The entrance light aperture 5001 is disposed opposite to the MEMS infrared light source 10, and the exit light aperture 5002 is disposed opposite to the filter 40.
[0084] Specifically, such as Figure 6As shown, in this embodiment of the application, the light entrance hole 5001 is positioned opposite to the MEMS infrared light source 10, and the light exit hole 5002 is positioned opposite to the filter 40. This not only effectively reduces the air convection of the MEMS infrared light source 10, making the measurement sensitivity of the MEMS infrared light source 10 higher, but also ensures the detection effect of the MEMS packaging structure on changes in gas concentration.
[0085] In one embodiment, the MEMS packaging structure further includes a vent layer 60, which is disposed on the side of the optical aperture layer 50 away from the substrate 20, and an air chamber is formed between the vent layer 60 and the optical aperture layer 50; the vent layer 60 is provided with an air hole 6001 for communicating the air chamber with the outside.
[0086] Specifically, such as Figure 6 As shown, in this embodiment of the application, the air chamber is formed by the air pore layer 60 and the light pore layer 50, which further ensures the measurement sensitivity of the MEMS infrared light source 10.
[0087] Among them, such as Figure 7 As shown, the inner cavity structure of the aperture layer 50 in this embodiment can be square or elliptical, so as to increase the optical path of infrared light passing through the air chamber by using different air chamber shapes, thereby further improving the measurement sensitivity of the MEMS infrared light source 10.
[0088] According to another embodiment of this application, a packaging method for a MEMS infrared light source 10 is provided. This packaging method is applied to the MEMS infrared light source 10 of this application. (See also...) Figure 8 The MEMS infrared light source 10 packaging method includes the following steps S101~S103: S101, a support layer 2 is formed on the substrate 1; It should be noted that, in this embodiment of the application, by forming the support layer 2 on the substrate 1, the support layer 2 can connect the substrate 1, the electrode resistance layer 3 and the nano-radiation layer 4, and form a suspended resistive structure, which effectively reduces the contact area between the support layer 2 and the substrate 1, reduces the heat conduction channel between the support layer 2 and the substrate 1, and slows down the dissipation of heat generated by the electrode resistance layer 3.
[0089] In one embodiment, setting a support layer 2 on a substrate 1 includes growing silicon dioxide on the substrate 1 using a thermal oxidation process to form a silicon dioxide thin film layer 201.
[0090] Specifically, such as Figure 9As shown, in this embodiment of the application, silicon dioxide is grown by thermal oxidation to form a silicon dioxide thin film layer 201, so that the silicon dioxide thin film layer 201 can serve as part of the support layer 2, and the silicon dioxide thin film layer 201 provides compressive stress to the support layer 2.
[0091] In one embodiment, after growing silicon dioxide on the substrate 1 using a thermal oxidation process to form a silicon dioxide thin film layer 201, the process includes growing silicon nitride on the silicon dioxide thin film layer 201 using a chemical vapor deposition process to form a silicon nitride thin film layer 202.
[0092] Specifically, such as Figure 10 As shown, in this embodiment of the application, silicon nitride is grown by chemical vapor deposition to form a silicon nitride thin film layer 202, so that the silicon nitride thin film layer 202 can serve as another part of the support layer 2, and the silicon nitride thin film layer 202 provides tensile stress for the support layer 2.
[0093] In one embodiment, the support layer 2 includes a silicon dioxide thin film layer 201 and a silicon nitride thin film layer 202.
[0094] Specifically, due to the compressive stress of the silicon dioxide thin film layer 201 and the tensile stress of the silicon nitride thin film layer 202, the present embodiment can balance the stress in the support layer 2 by adjusting the thickness of the silicon dioxide thin film layer 201 and the silicon nitride thin film layer 202, thereby ensuring the mechanical stability of the MEMS infrared light source 10 forming the suspended resistive structure, effectively improving the performance of the MEMS infrared light source 10, and extending the service life of the MEMS infrared light source 10.
[0095] In one embodiment, after growing silicon nitride on the silicon dioxide thin film layer 201 using a chemical vapor deposition process to form a silicon nitride thin film layer 202, and before setting the electrode resistance layer 3 on the support layer 2, the process further includes growing polycrystalline silicon on the silicon nitride thin film layer 202 using a thermal oxidation process to form a first layer 500.
[0096] Specifically, such as Figure 11 As shown in the embodiment of this application, the polycrystalline silicon grown by thermal oxidation provides a reference thickness for the first electrical connection portion 501 formed by the subsequent deposition of aluminum electrodes, ensuring the reliability and stability of the first electrical connection portion 501 during use.
[0097] In one embodiment, after growing polycrystalline silicon on the silicon nitride thin film layer 202 using a thermal oxidation process to form the first layer 500, the process further includes: processing the first layer 500 using a patterning process to expose at least a portion of the silicon nitride thin film layer 202.
[0098] Specifically, such as Figure 12 As shown, in this embodiment of the application, by patterning the edge region of the first layer 500, gaps for depositing aluminum electrodes to form the first electrical connection portion 501 can be etched at the edge of the first layer 500, thereby ensuring the formation of the first electrical connection portion 501.
[0099] In one embodiment, after processing the first layer 500 with a patterning process to expose at least a portion of the silicon nitride thin film layer 202, the process includes depositing an aluminum electrode on the exposed silicon nitride thin film layer 202 using an aluminum electrode deposition process to form a first electrical connection 501.
[0100] Specifically, such as Figure 13 As shown, in this embodiment of the application, by filling the gaps after patterning with aluminum electrodes and forming a first electrical connection portion 501, the electrode resistor layer 3 can be electrically connected to an external circuit through the first electrical connection portion 501, which facilitates the MEMS infrared light source 10 to be powered from the outside.
[0101] In one embodiment, after depositing an aluminum electrode on the exposed silicon nitride thin film layer 202 using an aluminum electrode deposition process to form the first electrical connection 501, the process includes growing polycrystalline silicon on the first layer 500 and the first electrical connection 501 using a chemical vapor deposition process to form a second layer 502.
[0102] Specifically, such as Figure 14 As shown, in this embodiment of the application, polycrystalline silicon grown by chemical vapor deposition is used to form the second layer 502. This second layer 502 not only fixes the first electrical connection 501, but also provides support for the third layer 503 of the air barrier wall 5, thereby effectively ensuring the reliability and stability of the air barrier wall 5.
[0103] The thickness of the second layer 502 is greater than that of the first layer 500, so that a portion of the second layer 502 can be sacrificed to provide growth raw materials for the third layer 503, thus ensuring the formation effect of the third layer 503.
[0104] In one embodiment, after growing polycrystalline silicon on the first layer 500 and the first electrical connection 501 using a chemical vapor deposition process to form a second layer 502, the process includes growing silicon dioxide on the second layer 502 using a thermal oxidation process to form a third layer 503.
[0105] Specifically, such as Figure 15As shown, in this embodiment of the application, silicon dioxide grown by thermal oxidation is used to form a third layer 503, which allows the thicker air barrier 5 to further raise the air above the nano-radiation layer 4, suppressing the air convection of the MEMS infrared light source 10, and further reducing the convection power consumption generated by the flowing air around the MEMS infrared light source 10 carrying away heat.
[0106] In one embodiment, after growing silicon dioxide on the second layer 502 using a thermal oxidation process to form the third layer 503, the process further includes: using an etching process to treat the central regions of the first layer 500, the second layer 502, and the third layer 503 to expose at least a portion of the silicon nitride thin film layer 202.
[0107] Specifically, such as Figure 16 As shown, in this embodiment of the application, the central regions of the first layer 500, the second layer 502 and the third layer 503 are processed by etching process so that the electrode resistor layer 3 can be supported by the support portion 223 of the support layer 2, thereby further improving the mechanical stability of the MEMS infrared light source 10, and also facilitating the formation of a floating resistor structure of the MEMS infrared light source 10 in the future.
[0108] In one embodiment, the air barrier 5 includes a first electrical connection 501, a second layer 502, and a third layer 503.
[0109] Specifically, in this embodiment, the air above the nano-radiation layer 4 is raised by the air barrier 5 and the air convection of the MEMS infrared light source 10 is suppressed, which effectively reduces the convection power consumption caused by the heat carried away by the flowing air around the MEMS infrared light source 10.
[0110] Furthermore, since the MEMS infrared light source 10 is often directly opposite the light entrance hole 5001 of the air chamber of the MEMS packaging structure in the MEMS packaging structure, the embodiments of this application can also connect the air barrier wall 5 to the light entrance hole 5001 so that the MEMS infrared light source 10 can become a sealed structure, further reducing the air convection of the MEMS infrared light source 10.
[0111] S102, an electrode resistance layer 3 is formed on the support layer 2; It should be noted that, in this embodiment of the application, by forming an electrode resistance layer 3 on the support layer 2, the MEMS infrared light source 10 can radiate infrared light outward through the electrode resistance layer 3, which facilitates the detection of gas concentration changes by the MEMS packaging structure.
[0112] In one embodiment, forming an electrode resistance layer 3 on the support layer 2 includes growing a molybdenum layer 301 on the silicon nitride thin film layer 202 using a sputtering process.
[0113] Specifically, such as Figure 17 As shown, in this embodiment of the application, molybdenum is grown by sputtering to form a molybdenum layer 301, which can serve as a dielectric layer between the platinum layer 302 and the silicon nitride thin film layer 202. That is, by leveraging the good adhesion between molybdenum and silicon nitride, the problem of the electrode resistor layer 3 easily detaching from the support layer 2 due to direct contact between the platinum layer 302 and the silicon nitride thin film layer 202 is avoided.
[0114] In one embodiment, after growing a molybdenum layer 301 on the silicon nitride thin film layer 202 using a sputtering process, the process includes growing a platinum layer 302 on the molybdenum layer 301 using a sputtering process.
[0115] Specifically, such as Figure 18 As shown, in this embodiment of the application, platinum is grown by sputtering to form a platinum layer 302, which allows the good electrical and thermal conductivity of platinum to further improve the radiation effect of the electrode resistance layer 3.
[0116] In one embodiment, after growing a platinum layer 302 on the molybdenum layer 301 using a sputtering process, the process includes: processing the edge regions of the molybdenum layer 301 and the platinum layer 302 using an etching process to expose at least a portion of the silicon nitride thin film layer 202 and forming an isolation trench 6.
[0117] Specifically, such as Figure 19 As shown, in this embodiment, the edge regions of the molybdenum layer 301 and the platinum layer 302 are processed by etching to form isolation trenches 6. On the one hand, this facilitates the subsequent plasma treatment of the nano-radiation layer 4, allowing the plasma bombardment area to be closer to the center of the MEMS infrared light source 10, reducing plasma damage to the air barrier wall 5. On the other hand, it also leaves sufficient space for the subsequent deposition of aluminum electrodes and the etching of the cantilever portion 222 of the support layer 2, improving the fabrication efficiency of the MEMS infrared light source.
[0118] In one embodiment, after processing the edge regions of the molybdenum layer 301 and the platinum layer 302 with an etching process to expose at least a portion of the silicon nitride thin film layer 202 and forming the isolation trench 6, the process further includes processing the molybdenum layer 301 and the platinum layer 302 with a patterning process to form the heating section 32.
[0119] Specifically, such as Figure 20As shown, in this embodiment of the application, the molybdenum layer 301 and the platinum layer 302 are processed by a patterning process, so that the molybdenum layer 301 and the platinum layer 302 can form a circular hollow part 321 and a connector 322 for connecting the hollow part 321 to the connecting part 31.
[0120] Thus, by designing the circular cutout 321, the cutout 321, which is both axially symmetrical and centrally symmetrical, can further raise the potential at the center of the heating part 32, so that Joule heat is concentrated at the center of the device. This not only effectively improves the radiation efficiency of the electrode resistance layer 3, but also further reduces the stress generated during the processing of the electrode resistance layer 3, thereby improving the processing effect of the MEMS infrared light source.
[0121] In one embodiment, after processing the molybdenum layer 301 and the platinum layer 302 using a patterning process to form the heating part 32, the process further includes processing the support layer 2 using an etching process to form the through-hole part 221 and the cantilever part 222.
[0122] Specifically, such as Figure 21 As shown, in this embodiment of the application, the support layer 2 is processed by etching so that the electrode resistance layer 3 and the nano-radiation layer 4 located on the support portion 223 can form a suspended resistive structure together with the substrate 1 through the support layer 2. This not only reduces the contact area between the support layer 2 and the substrate 1, but also further reduces the heat conduction channel between the support layer 2 and the substrate 1, which greatly slows down the heat dissipation generated by the electrode resistance layer 3, thereby suppressing the heat transfer power consumption of the MEMS infrared light source 10, that is, effectively reducing the power consumption of the MEMS infrared light source 10.
[0123] In one embodiment, after processing the support layer 2 with an etching process to form the through hole portion 221 and the cantilever portion 222, the process further includes: depositing an aluminum electrode on the support layer 2 using an aluminum electrode deposition process and a patterning process to form the connection portion 31.
[0124] Specifically, such as Figure 22 As shown, in this embodiment of the application, aluminum electrodes are deposited on the support layer 2 through an aluminum electrode deposition process and a patterning process, so that the electrode resistance layer 3 can be electrically connected to the second electrical connection portion 7 of the MEMS infrared light source 10 through the connection portion 31, thereby enabling the MEMS infrared light source 10 to be powered by an external circuit and drive the heating portion 32 to radiate infrared light outward.
[0125] Among them, such as Figure 3As shown, since the second electrical connection 7 is located on the side of the air barrier wall 5 away from the electrode resistor layer 3, in order to ensure that the MEMS infrared light source 10 can be powered by an external circuit, the air barrier wall 5 is also provided with a first electrical connection 501, and the connection 31 can be electrically connected to the second electrical connection 7 through the first electrical connection 501.
[0126] S103, a nano-radiative layer 4 is formed on the electrode resistance layer 3.
[0127] It should be noted that, in this embodiment of the application, by forming a nano-radiation layer 4 on the electrode resistance layer 3, the nano-radiation layer 4 can reduce the reflection of infrared light when the electrode resistance layer 3 radiates infrared light outward. That is, the nano-radiation layer 4 enhances the absorption rate of infrared light by the MEMS infrared light source 10. Furthermore, according to Kirchhoff's thermal radiation theory, when an object is in thermal equilibrium, its infrared emissivity is equal to its absorption rate in the corresponding wavelength band. Therefore, the emissivity of the MEMS infrared light source 10 for infrared light is also enhanced, thereby further reducing the power consumption of the MEMS infrared light source.
[0128] In one embodiment, forming a nano-radiation layer 4 on the electrode resistance layer 3 includes growing polycrystalline silicon on the electrode resistance layer 3 using a chemical vapor deposition process to form a polycrystalline silicon layer 401.
[0129] Specifically, such as Figure 23 As shown, in this embodiment of the application, polycrystalline silicon is grown by chemical vapor deposition to form a polycrystalline silicon layer 401, so that the polycrystalline silicon layer 401 can be used as a raw material for the fabrication of the nano-radiation layer 4 of the black silicon structure, thus ensuring the preparation effect of the nano-radiation layer 4.
[0130] In one embodiment, after growing polycrystalline silicon on the electrode resistance layer 3 using a chemical vapor deposition process to form a polycrystalline silicon layer 401, the process further includes treating the polycrystalline silicon layer 401 using a plasma treatment process to form a black silicon nano-radiation layer 4.
[0131] Specifically, such as Figure 24 As shown, in this embodiment of the application, the polycrystalline silicon layer 401 is bombarded into a structure of several conical aggregates through a plasma processing process, that is, a black silicon structure containing multiple nanocones is formed. This not only increases the absorption path of infrared light by the MEMS infrared light source 10 and reduces the reflectivity of infrared light, but also, since the nanoradiative layer 4 of the black silicon structure enhances the absorption rate of infrared light by the MEMS infrared light source 10, it can also enhance the emissivity of infrared light by the MEMS infrared light source 10. Therefore, it further reduces the power consumption of the MEMS infrared light source 10 and improves the working efficiency of the MEMS infrared light source 10.
[0132] In one embodiment, after processing the polycrystalline silicon layer 401 using a plasma processing process to form a black silicon nano-radiation layer 4, the process further includes processing the side of the substrate 1 opposite to the support layer 2 using a thinning process.
[0133] Specifically, such as Figure 25 As shown, in this embodiment of the application, the side of the substrate 1 away from the support layer 2 is processed by a thinning process to reduce the space between the support layer 2 and the substrate 1 of the MEMS packaging structure, further suppressing the air convection of the MEMS infrared light source 10, and reducing the convection power consumption generated by the heat carried away by the flowing air around the MEMS infrared light source 10.
[0134] In one embodiment, after processing the side of the substrate 1 away from the support layer 2 using a thinning process, the process includes: processing the central region of the substrate 1 using an etching process to expose at least a portion of the silicon dioxide thin film layer 201 and form a cavity 101.
[0135] Specifically, such as Figure 26 As shown, in this embodiment of the application, the central region of the substrate 1 is processed by etching to form a cavity 101, so that the electrode resistance layer 3 and the nano-radiation layer 4 located on the support 223 can form a suspended resistive structure together with the substrate 1 through the support layer 2.
[0136] In one embodiment, after processing the central region of the substrate 1 with an etching process to expose at least a portion of the silicon dioxide thin film layer 201 and form a cavity 101, the process includes fixing the substrate 1 to the substrate 20 using an anodic bonding process.
[0137] Specifically, such as Figure 27 As shown, in this embodiment of the application, the substrate 1 is fixed to the substrate 20 by anodizing bonding, which effectively ensures the connection between the MEMS infrared light source 10 and the MEMS packaging structure, and further improves the reliability and stability of the MEMS packaging structure.
[0138] In one embodiment, see Figures 9-27 The packaging method for the MEMS infrared light source 10 includes: Silicon dioxide is grown on the substrate 1 using a thermal oxidation process to form a silicon dioxide thin film layer 201; Silicon nitride is grown on the silicon dioxide thin film layer 201 using a chemical vapor deposition process to form a silicon nitride thin film layer 202; Polycrystalline silicon is grown on the silicon nitride thin film layer 202 using a thermal oxidation process to form the first layer 500; The first layer 500 is processed using a patterning process to expose at least a portion of the silicon nitride thin film layer 202; An aluminum electrode is deposited on the exposed silicon nitride thin film layer 202 using an aluminum electrode deposition process to form the first electrical connection portion 501; Polycrystalline silicon is grown on the first layer 500 and the first electrical connection portion 501 using a chemical vapor deposition process to form the second layer 502. Silicon dioxide is grown on the second layer 502 using a thermal oxidation process to form the third layer 503; An etching process is used to process the central regions of the first layer 500, the second layer 502, and the third layer 503 to expose at least a portion of the silicon nitride thin film layer 202. A molybdenum layer 301 is grown on the silicon nitride thin film layer 202 using a sputtering process; A platinum layer 302 is grown on the molybdenum layer 301 using a sputtering process; The edge regions of the molybdenum layer 301 and the platinum layer 302 are processed by etching to expose at least a portion of the silicon nitride thin film layer 202 and form an isolation trench 6; The molybdenum layer 301 and the platinum layer 302 are processed using a patterning process to form the heating part 32; Polycrystalline silicon is grown on the electrode resistance layer 3 using a chemical vapor deposition process to form a polycrystalline silicon layer 401; The polycrystalline silicon layer 401 is processed using a plasma treatment process to form the nano-radiative layer 4 with a black silicon structure. The support layer 2 is processed by etching to form through-hole portion 221 and cantilever portion 222; An aluminum electrode is deposited on the support layer 2 using an aluminum electrode deposition process and a patterning process to form the connection portion 31; The side of the substrate 1 facing away from the support layer 2 is treated using a thinning process; The central region of the substrate 1 is processed by an etching process to expose at least a portion of the silicon dioxide thin film layer 201 and form a cavity 101; The substrate 1 is fixed to the substrate 20 using an anodic bonding process.
[0139] The above embodiments mainly describe the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. For the sake of brevity, they will not be elaborated here.
[0140] While specific embodiments of this application have been described in detail by way of examples, those skilled in the art should understand that the above examples are for illustrative purposes only and are not intended to limit the scope of this application. Those skilled in the art should understand that modifications can be made to the above embodiments without departing from the scope and spirit of this application. The scope of this application is defined by the appended claims.
Claims
1. A MEMS infrared light source, characterized in that, include: The substrate (1) has a cavity (101) formed thereon. The support layer (2) includes a fixing part (21) and a bearing part (22). The fixing part (21) is connected to the base (1). The bearing part (22) has a through hole (221) through the thickness direction of the support layer (2). A cantilever part (222) is formed between adjacent through holes (221). The bearing part (22) also includes a support part (223). The support part (223) is connected to the fixing part (21) through the cantilever part (222), and the support part (223) is disposed opposite to the cavity (101). An electrode resistance layer (3) is disposed on the side of the support portion (223) away from the cavity (101); the electrode resistance layer (3) includes a connecting portion (31) and a heating portion (32), the connecting portion (31) is connected to the support portion (223), and the connecting portion (31) is disposed around the heating portion (32); A nano-radiation layer (4) is disposed on the side of the heating part (32) away from the support part (223).
2. The MEMS infrared light source according to claim 1, characterized in that, The heating part (32) includes a hollow part (321) and a connector (322). The hollow part (321) is annular and is connected to the connecting part (31) through the connector (322).
3. The MEMS infrared light source according to claim 1, characterized in that, The support layer (2) includes a silicon dioxide thin film layer (201) and a silicon nitride thin film layer (202), wherein the silicon dioxide thin film layer (201) is connected to the substrate (1); The heating element (32) includes a molybdenum layer (301) and a platinum layer (302). The molybdenum layer (301) is connected to the silicon nitride thin film layer (202), and the platinum layer (302) is connected to the nano-radiation layer (4).
4. The MEMS infrared light source according to claim 1, characterized in that, The nano-radiative layer (4) has a black silicon structure.
5. The MEMS infrared light source according to claim 1, characterized in that, It also includes an air barrier wall (5), which is disposed on the side of the support layer (2) away from the substrate (1), and an isolation groove (6) is formed between the air barrier wall (5), the electrode resistance layer (3), and the nano-radiation layer (4); the isolation groove (6) is connected to the through hole (221); The thickness of the air barrier wall (5) is greater than that of the nano-radiation layer (4).
6. A MEMS packaging structure, characterized in that, It includes a substrate (20) and a MEMS infrared light source as described in any one of claims 1-5, wherein the MEMS infrared light source is disposed on the substrate (20).
7. The MEMS packaging structure according to claim 6, characterized in that, It also includes a detector (30) and a filter (40), the detector (30) being disposed on the substrate (20) and the filter (40) being disposed on the detector (30). The substrate (20) includes a signal processing circuit (2001) which is electrically connected to the MEMS infrared light source (10) and the detector (30).
8. The MEMS packaging structure according to claim 7, characterized in that, It also includes a light-perforated layer (50), which is connected to the substrate (20). The light-perforated layer (50) includes an entrance light-perforation (5001) and an exit light-perforation (5002). The entrance light-perforation (5001) is disposed opposite to the MEMS infrared light source, and the exit light-perforation (5002) is disposed opposite to the filter (40).
9. The MEMS packaging structure according to claim 8, characterized in that, It also includes a pore layer (60), which is disposed on the side of the optical aperture layer (50) away from the substrate (20), and an air chamber is formed between the pore layer (60) and the optical aperture layer (50); the pore layer (60) is provided with an air hole (6001) for communicating the air chamber with the outside.
10. A MEMS infrared light source packaging method, applied to the MEMS infrared light source as described in any one of claims 1-5, characterized in that, The MEMS infrared light source packaging method includes: A support layer (2) is formed on the substrate (1); An electrode resistance layer (3) is formed on the support layer (2); A nano-radiation layer (4) is formed on the electrode resistance layer (3).
11. The MEMS infrared light source packaging method according to claim 10, characterized in that, The provision of a support layer (2) on the substrate (1) includes: Silicon dioxide is grown on the substrate (1) using a thermal oxidation process to form a silicon dioxide thin film layer (201). Silicon nitride is grown on the silicon dioxide thin film layer (201) by chemical vapor deposition to form a silicon nitride thin film layer (202). The silicon dioxide thin film layer (201) and the silicon nitride thin film layer (202) constitute the support layer (2).
12. The MEMS infrared light source packaging method according to claim 11, characterized in that, After growing silicon nitride on the silicon dioxide thin film layer (201) using a chemical vapor deposition process to form a silicon nitride thin film layer (202), and before setting the electrode resistance layer (3) on the support layer (2), the process further includes: Polycrystalline silicon is grown on the silicon nitride thin film layer (202) using a thermal oxidation process to form the first layer (500). The first layer (500) is processed using a patterning process to expose at least a portion of the silicon nitride thin film layer (202). An aluminum electrode is deposited on the exposed silicon nitride thin film layer (202) using an aluminum electrode deposition process to form a first electrical connection (501). Polycrystalline silicon is grown on the first layer (500) and the first electrical connection (501) using a chemical vapor deposition process to form a second layer (502). Silicon dioxide is grown on the second layer (502) using a thermal oxidation process to form the third layer (503). The central regions of the first layer (500), the second layer (502), and the third layer (503) are processed by etching to expose at least a portion of the silicon nitride thin film layer (202). The first electrical connection part (501), the second layer (502) and the third layer (503) together form an air barrier wall (5).
13. The MEMS infrared light source packaging method according to claim 12, characterized in that, Forming an electrode resistance layer (3) on the support layer (2) includes: A molybdenum layer (301) is grown on the silicon nitride thin film layer (202) using a sputtering process. A platinum layer (302) is grown on the molybdenum layer (301) using a sputtering process. The edge regions of the molybdenum layer (301) and the platinum layer (302) are processed by etching to expose at least a portion of the silicon nitride thin film layer (202) and form an isolation trench (6). The molybdenum layer (301) and the platinum layer (302) are processed using a patterning process to form a heating element (32). The support layer (2) is processed by etching to form a through hole (221) and a cantilever (222). An aluminum electrode is deposited on the support layer (2) using an aluminum electrode deposition process and a patterning process to form a connection (31). The connecting part (31) and the heating part (32) constitute the electrode resistance layer (3), and the connecting part (31) is electrically connected to the first electrical connecting part (501).
14. The MEMS infrared light source packaging method according to claim 13, characterized in that, Forming a nano-radiative layer (4) on the electrode resistive layer (3) includes: Polycrystalline silicon is grown on the electrode resistance layer (3) using a chemical vapor deposition process to form a polycrystalline silicon layer (401). The polycrystalline silicon layer (401) is processed using a plasma treatment process to form a black silicon nano-radiation layer (4).
15. The MEMS infrared light source packaging method according to claim 14, characterized in that, After forming the nano-radiative layer (4) on the electrode resistive layer (3), the process further includes: The side of the substrate (1) facing away from the support layer (2) is treated by a thinning process; The central region of the substrate (1) is processed by an etching process to expose at least a portion of the silicon dioxide thin film layer (201) and form a cavity (101). The substrate (1) is fixed to the substrate (20) using an anodic bonding process.