Plasma enhanced chemical vapor deposition method and device

Abstract

The invention discloses a plasma enhanced chemical vapor deposition method and device. The method comprises the following steps: a first thin film deposition step: adjusting a plasma power supply system to ionize a first reaction gas introduced into a chamber at a first output deposition power so as to perform first thin film deposition on a wafer in the chamber; a first purging step: adjusting the plasma power supply system and keeping the plasma power supply system at a first output purging power, purging the wafer by using the purging gas introduced into the chamber, the first output purging power being lower than the first output deposition power; and a second thin film deposition step in which the plasma power supply system is adjusted to ionize a second reaction gas introduced into the chamber at a second output deposition power so as to perform second thin film deposition on the wafer, and the first output purging power is lower than the second output deposition power. According to the method, the low-power plasma state is maintained in the purging stage between step-by-step deposition, condensation of residual reactants is inhibited, and the defect rate of wafer particle pollution is greatly reduced.

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