A wideband, high-isolation single-pole five-throw switch chip

Abstract

This invention discloses a wideband, high-isolation single-pole five-throw switch chip, comprising six ports, two power ports, five control ports, twenty microstrip lines, one capacitor C1, twenty-five switching transistors, twenty-five gate resistors, and five voltage control modules. The six ports are port 1, port 2, port 3, port 4, port 5, and port 6; port 1 is the RF input port; ports 2, 3, 4, 5, and 6 are output ports. The RF input and output ports are connected via the two power ports, five control ports, twenty microstrip lines, one capacitor C1, twenty-five switching transistors, twenty-five gate resistors, and five voltage control modules. Compared to existing single-pole five-throw switches, this invention is integrated on a single chip, offering the advantage of small size. The use of voltage control modules significantly reduces the number of power supply modules, facilitating application.

Description

Technical Field

[0001] This invention relates to the fields of microwave communication and radio frequency integrated circuit technology, and in particular to a wideband, high-isolation single-pole five-throw switch chip. Background Technology

[0002] Modern wireless communication technology has entered the era of multi-mode, multi-band, broadband wireless communication. Miniaturized and low-cost multi-mode, multi-frequency, and broadband radio frequency (RF) chips are a core system requirement in communication systems. Switches, as key components in the RF front-end for channel selection, RF signal transmission, and port isolation, play a crucial role. Single-pole multiple-throw (SPMD) switches are of paramount importance in RF systems with switchable operating frequencies.

[0003] Currently, there are few reports on broadband single-pole five-throw (SPF) switch chips, and existing methods mostly employ MEMS technology. However, existing technologies still suffer from limitations such as narrow operating bandwidth, large switch size, and difficulty in integration. Current reports primarily utilize microstrip lines to form LC filter networks and parallel PIN diodes, achieving switching functionality through the on / off state of the PIN diodes. These are mostly board-level circuits, using numerous discrete components, resulting in large circuit sizes and an inability to guarantee good performance across a wide bandwidth.

[0004] Therefore, in order to meet the needs of modern wireless communication systems, it is necessary to develop on-chip integrated single-pole five-throw switch chips with low insertion loss and wide operating bandwidth, so that they can achieve better performance in wireless communication systems. Summary of the Invention

[0005] The technical problem this invention aims to solve is to provide a wide-band, high-isolation single-pole five-throw switch chip, thereby enabling a single RF module to communicate in a cascaded manner with any one of five other RF modules. Simultaneously, this switch offers advantages such as low insertion loss, a wide operating bandwidth, and small size. This invention is expected to meet the requirements of single-channel to multi-channel signal switching in communication systems and the flexible cascading needs between a single RF module and multiple RF modules.

[0006] To address the aforementioned technical problems, this invention discloses a wideband, high-isolation single-pole five-throw switch chip, comprising six ports, two power ports, five control ports, twenty microstrip lines, one capacitor C1, twenty-five switching transistors, twenty-five gate resistors, and five voltage control modules. The six ports include port 1, port 2, port 3, port 4, port 5, and port 6; Port 1 is an RF input port; ports 2, 3, 4, 5, and 6 are output ports. The RF input port and the output port are connected through the two power ports, the five control ports, the twenty microstrip lines, the capacitor C1, the twenty-five switching transistors, the twenty-five gate resistors, and the five voltage control modules.

[0007] As an optional implementation, in this embodiment of the invention, the two power ports include power supply port 1 and power supply port 2; The five control ports include control port 1, control port 2, control port 3, control port 4 and control port 5; The twenty microstrip lines include , , , , , , , , , , , , , , , , , , and ; The twenty-five switching transistors include , , , , , , , , , , , , , , , , , , , , , , , and ; The twenty-five gate resistors include , , , , , , , , , , , , , , , , , , , , , , , and .

[0008] As an optional implementation, in this embodiment of the invention, the five voltage control modules include voltage control module 1, voltage control module 2, voltage control module 3, voltage control module 4 and voltage control module 5; each voltage control module consists of five resistors and three transistors.

[0009] As an optional implementation, in this embodiment of the invention, port 1 is connected via a microstrip line. Match to each output port; Switching transistors With microstrip lines After being connected in series, it is connected to the stacked switching transistors connected in series to ground. , Parallel connection, with microstrip lines , and switching transistors The resulting T-type matching network is connected in series with the switching transistor. Series connection, and series-connected grounded switching transistors Parallel connection, with microstrip lines , and switching transistors The resulting T-shaped matching network is connected in series to obtain the branch structure of port 2.

[0010] As an optional implementation, in this embodiment of the invention, the switching transistor With microstrip lines After being connected in series, it is connected to the stacked switching transistors connected in series to ground. , Parallel connection, with two sections of microstrip line and parallel switching transistor to ground and microstrip lines and parallel switching transistor to ground The L-shaped matching network is connected in series with the microstrip line. , The T-type matching network formed by the capacitor C1 to ground is connected in series to obtain the branch structure of port 4.

[0011] As an optional implementation, in this embodiment of the invention, the power supply ports of the voltage control module 1 are VDD and VEE, the control voltage input port is Vin, and the voltage output ports are VOH and VOL. Resistors RT1, RT2, and RT3 are connected in series between the drains of transistors T1, T2, and T3, which are connected to the power supply VDD, respectively. Resistor RT4 is connected in series between the gates of transistors T1 and T2, and resistor RT5 is connected in series between the gate of transistor T3.

[0012] As an optional implementation, in this embodiment of the invention, the twenty-five gate resistors , , , , , , , , , , , , , , , , , , , , , , , 、 Connected to the switching transistor respectively , , , , , , , , , , , , , , , , , , , , , , , , Between the gate and the voltage control module.

[0013] As an optional implementation, in this embodiment of the invention, the microstrip line Used for switching transistors at port 1 Matching between them, switching transistors and The control segment switches on and off. When radio frequency signals are allowed to pass, the switching transistor closes; when radio frequency signals are blocked, the switching transistor opens. Stacked switching transistors , and switching transistors , and All are connected in parallel to ground. When radio frequency signals are allowed to pass through, the switching transistors are turned off to prevent radio frequency signals from leaking to ground. microstrip line With stacked switching transistors , The turn-off capacitors form an L-type matching network with the microstrip line. microstrip lines and switching transistors The turn-off capacitors form a T-type matching network connected in series, thus forming a broadband matching network; Transmit radio frequency signals to the switching transistor By switching transistors Turn-off capacitor and microstrip line and switching transistors Turn-off capacitor and microstrip line Two L-shaped matching networks are formed to output the radio frequency signal to port 2; when the radio frequency signal is blocked, the switching transistor closes, short-circuiting the radio frequency signal to ground, thereby improving port isolation.

[0014] As an optional implementation, in this embodiment of the invention, the microstrip lines at ports 1 to 4 are... Used to switch transistor at port 1 Matching, switching transistors The control segment switches on and off. When radio frequency signals are allowed to pass, the switching transistor closes; when radio frequency signals are blocked, the switching transistor opens. Stacked switching transistors , and switching transistors , All are connected in parallel to ground. When radio frequency signals are allowed to pass through, the switching transistors are turned off to prevent radio frequency signals from leaking to ground. microstrip line , , Respectively with stacked switching transistors , Switching transistors and switching transistors The turn-off capacitors form an L-type matching network with the microstrip line. , The T-type matching network formed by capacitor C1 is connected in series to output the radio frequency signal to port 4; when the radio frequency signal is blocked from passing through, the switching transistor closes, short-circuiting the radio frequency signal to ground, thereby improving the port isolation.

[0015] As an optional implementation, in this embodiment of the invention, the control voltage of the voltage control module 1 is input from the Vin port, and after passing through the voltage divider branch formed by resistor RT4, transistor T1 and resistor RT1, an inverted voltage is output at the VOL port. After the control voltage passes through the voltage divider branch formed by resistor RT4, transistor T2, and resistor RT2, an inverted voltage is output at node C. The inverted voltage is output as a non-inverted voltage at port VOH after passing through the voltage divider branch formed by resistor RT5, transistor T3, and resistor RT3.

[0016] Compared with the prior art, the embodiments of the present invention have the following beneficial effects: This invention discloses a wideband, high-isolation single-pole five-throw switch chip, comprising six ports, two power ports, five control ports, twenty microstrip lines, one capacitor C1, twenty-five switching transistors, twenty-five gate resistors, and five voltage control modules. Compared to existing single-pole five-throw switches, this invention is integrated on a single chip, offering the advantage of small size. Furthermore, this invention employs a multi-section microstrip line series connection and a parallel connection of ground-to-ground switching transistors, achieving excellent return matching, low insertion loss, and superior isolation across a wide frequency band. The use of voltage control modules significantly reduces the number of power supply components, facilitating application. This single-pole five-throw switch chip exhibits excellent overall performance. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a schematic diagram of the structure of a wideband, high-isolation single-pole five-throw switch chip disclosed in an embodiment of the present invention; Figure 2 This is the transmission performance from port 1 to port 2 disclosed in the embodiments of the present invention; Figure 3This is the transmission performance from port 1 to port 3 disclosed in the embodiments of the present invention; Figure 4 This is the transmission performance from port 1 to port 4 disclosed in the embodiments of the present invention; Figure 5 This is the transmission performance from port 1 to port 5 disclosed in the embodiments of the present invention; Figure 6 This is the performance of transmission from port 1 to port 6 disclosed in the embodiments of the present invention. Detailed Implementation

[0019] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0020] The terms "first," "second," etc., used in the specification, claims, and accompanying drawings of this invention are used to distinguish different objects, not to describe a specific order. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, apparatus, product, or device that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or devices.

[0021] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of the invention. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0022] In all embodiments of the present invention, the variables involved in all computational expressions or mathematical functions are dimensionless before calculation. The values ​​of the independent variables in all computational expressions or mathematical functions in these embodiments conform to the reasonable requirements of the input range of the computational expression or mathematical function, ensuring that the computational expression or mathematical function can be calculated smoothly without violating physical laws or mathematical rules.

[0023] This invention discloses a wideband, high-isolation single-pole five-throw switch chip, comprising six ports, two power ports, five control ports, twenty microstrip lines, one capacitor C1, twenty-five switching transistors, twenty-five gate resistors, and five voltage control modules. The six ports are port 1, port 2, port 3, port 4, port 5, and port 6. Port 1 is the RF input port; ports 2, 3, 4, 5, and 6 are output ports. The RF input port and the output port are connected via the two power ports, the five control ports, the twenty microstrip lines, the capacitor C1, the twenty-five switching transistors, the twenty-five gate resistors, and the five voltage control modules. Compared to existing single-pole five-throw switches, this invention is integrated on a single chip, offering the advantage of small size. Furthermore, this invention employs a series connection of multiple microstrip lines and a parallel connection of ground-to-ground switching transistors, achieving good return matching, low insertion loss, and excellent isolation across a wide frequency band. The use of voltage control modules significantly reduces the number of power supplies required, facilitating application. This single-pole five-throw switch chip exhibits excellent overall performance. The following sections will provide detailed explanations.

[0024] Example 1 Please see Figure 1 , Figure 1 This is a schematic diagram of the structure of a wideband, high-isolation single-pole five-throw switch chip disclosed in an embodiment of the present invention. Figure 1 The described wideband, high-isolation single-pole five-throw switch chip is applied in the fields of microwave communication and radio frequency integrated circuit technology, and the embodiments of this invention are not limited thereto. Figure 1 As shown, this wideband high isolation single-pole five-throw switch chip includes six ports, two power ports, five control ports, twenty microstrip lines, one capacitor C1, twenty-five switching transistors, twenty-five gate resistors, and five voltage control modules. The six ports include port 1, port 2, port 3, port 4, port 5, and port 6; Port 1 is an RF input port; ports 2, 3, 4, 5, and 6 are output ports. The RF input port and the output port are connected through the two power ports, the five control ports, the twenty microstrip lines, the capacitor C1, the twenty-five switching transistors, the twenty-five gate resistors, and the five voltage control modules.

[0025] Optionally, the two power ports include power supply port 1 and power supply port 2; The five control ports include control port 1, control port 2, control port 3, control port 4 and control port 5; The twenty microstrip lines include , , , , , , , , , , , , , , , , , , and ; The twenty-five switching transistors include , , , , , , , , , , , , , , , , , , , , , , , and ; The twenty-five gate resistors include , , , , , , , , , , , , , , , , , , , , , , , and .

[0026] Optionally, the five voltage control modules include voltage control module 1, voltage control module 2, voltage control module 3, voltage control module 4 and voltage control module 5; each voltage control module consists of five resistors and three transistors.

[0027] Optionally, port 1 is connected via a microstrip line. Match to each output port; Switching transistors With microstrip lines After being connected in series, it is connected to the stacked switching transistors connected in series to ground. , Parallel connection, with microstrip lines , and switching transistors The resulting T-type matching network is connected in series with the switching transistor. Series connection, and series-connected grounded switching transistors Parallel connection, with microstrip lines , and switching transistors The resulting T-shaped matching network is connected in series to obtain the branch structure of port 2.

[0028] Optionally, the switching transistor With microstrip lines After being connected in series, it is connected to the stacked switching transistors connected in series to ground. , Parallel connection, with two sections of microstrip line and parallel switching transistor to ground and microstrip lines and parallel switching transistor to ground The L-shaped matching network is connected in series with the microstrip line. , The T-type matching network formed by the capacitor C1 to ground is connected in series to obtain the branch structure of port 4.

[0029] Optionally, the power supply ports of the voltage control module 1 are VDD and VEE, the control voltage input port is Vin, and the voltage output ports are VOH and VOL. Resistors RT1, RT2, and RT3 are connected in series between the drains of transistors T1, T2, and T3, which are connected to the power supply VDD, respectively. Resistor RT4 is connected in series between the gates of transistors T1 and T2, and resistor RT5 is connected in series between the gate of transistor T3.

[0030] Optionally, the twenty-five gate resistors , , , , , , , , , , , , , , , , , , , , , , , 、 Connected to the switching transistor respectively , , , , , , , , , , , , , , , , , , , , , , , , Between the gate and the voltage control module.

[0031] Optionally, the microstrip line Used for switching transistors at port 1 Matching between them, switching transistors and The control segment switches on and off. When radio frequency signals are allowed to pass, the switching transistor closes; when radio frequency signals are blocked, the switching transistor opens. Stacked switching transistors , and switching transistors , and All are connected in parallel to ground. When radio frequency signals are allowed to pass through, the switching transistors are turned off to prevent radio frequency signals from leaking to ground. microstrip line With stacked switching transistors , The turn-off capacitors form an L-type matching network with the microstrip line. microstrip lines and switching transistors The turn-off capacitors form a T-type matching network connected in series, thus forming a broadband matching network; Transmit radio frequency signals to the switching transistor By switching transistors Turn-off capacitor and microstrip line and switching transistors Turn-off capacitor and microstrip line Two L-shaped matching networks are formed to output the radio frequency signal to port 2; when the radio frequency signal is blocked, the switching transistor closes, short-circuiting the radio frequency signal to ground, thereby improving port isolation.

[0032] Optional, microstrip lines for ports 1 to 4. Used to switch transistor at port 1 Matching, switching transistors The control segment switches on and off. When radio frequency signals are allowed to pass, the switching transistor closes; when radio frequency signals are blocked, the switching transistor opens. Stacked switching transistors , and switching transistors , All are connected in parallel to ground. When radio frequency signals are allowed to pass through, the switching transistors are turned off to prevent radio frequency signals from leaking to ground. microstrip line , , Respectively with stacked switching transistors , Switching transistors and switching transistors The turn-off capacitors form an L-type matching network with the microstrip line. , The T-type matching network formed by capacitor C1 is connected in series to output the radio frequency signal to port 4; when the radio frequency signal is blocked from passing through, the switching transistor closes, short-circuiting the radio frequency signal to ground, thereby improving the port isolation.

[0033] Optionally, the control voltage of the voltage control module 1 is input from the Vin port, and after passing through the voltage divider branch formed by resistor RT4, transistor T1 and resistor RT1, an inverted voltage is output at the VOL port. After the control voltage passes through the voltage divider branch formed by resistor RT4, transistor T2, and resistor RT2, an inverted voltage is output at node C. The inverted voltage is output as a non-inverted voltage at port VOH after passing through the voltage divider branch formed by resistor RT5, transistor T3, and resistor RT3.

[0034] Example 2 like Figure 1 As shown, it mainly includes six ports (port 1 is the input port, and ports 2, 3, 4, 5, and 6 are the output ports), two power supply ports (power supply port 1 and power supply port 2), five control ports (control port 1, control port 2, control port 3, control port 4, and control port 5), and twenty microstrip lines ( , , , , , , , , , , , , , , , , , , , The system consists of a capacitor (C1), twenty-five switching transistors (M1, M2, M3, M4, M5, M6, M7, M8, M9, M10, M11, M12, M13, M14, M15, M16, M17, M18, M19, M20, M21, M22, M23, M24, M25), twenty-five gate resistors (R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, R12, R13, R14, R15, R16, R17, R18, R19, R20, R21, R22, R23, R24, R25), and five voltage control modules, each consisting of five resistors (RT1, RT2, RT3, RT4, RT5) and three transistors (T1, T2, T3).

[0035] Port 1 is an RF input port, connected via a microstrip line. The output ports are well matched, with ports 1 through 2, 3, 5, and 6 being identical. For the stub at port 2, the switching transistor M1 is connected to the microstrip line... It is connected in series, then in parallel with stacked switching transistors M2 and M3 connected in series to ground, and then connected to the microstrip line. , The T-type matching network formed by the switching transistor M4 is connected in series, then in series with the switching transistor M5, then in parallel with the series-connected grounded switching transistor M6, and finally connected to the microstrip line. , It is connected in series with the T-type matching network formed by the switching transistor M7. The three branches of port 3, port 5, and port 6 have the same structure and component values ​​as port 2.

[0036] For port 4, the spur structure differs from that of ports 2, 3, 5, and 6, consisting of a switching transistor M11 and a microstrip line. After being connected in series, it is then connected in parallel with stacked switching transistors M12 and M13, which are connected in series to ground, and then connected with two sections of microstrip lines. and the parallel switching transistor M14 to ground and the microstrip line The L-shaped matching network, consisting of the parallel-to-ground switching transistor M15, is connected in series and finally connected to the microstrip line. , It is connected in series with the T-type matching network formed by the ground capacitor C1.

[0037] The circuit schematic of the voltage control module is as follows: Figure 1 As shown in the dashed box in the lower left corner, the power supply ports are VDD and VEE, the control voltage input port is Vin, and the voltage output ports are VOH and VOL. Resistors RT1, RT2, and RT3 are connected in series between the drains of transistors T1, T2, and T3 for power supply VDD, respectively. Resistor RT4 is connected in series between the gates of transistors T1 and T2, and resistor RT5 is connected in series between the gate of transistor T3.

[0038] The twenty-five gate resistors (R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, R12, R13, R14, R15, R16, R17, R18, R19, R20, R21, R22, R23, R24, R25) are all connected between the gate of the corresponding switching transistor (M1, M2, M3, M4, M5, M6, M7, M8, M9, M10, M11, M12, M13, M14, M15, M16, M17, M18, M19, M20, M21, M22, M23, M24, M25) and the voltage control module.

[0039] from Figure 1 As can be seen from the circuit diagram, for this single-pole five-throw switch, since input ports 1 to 2, 3, 5, and 6 are completely identical, only ports 1 to 2 need to be analyzed. (Microstrip line) Used as a port 1 to switch transistor Matching at the point, switching transistor and This controls the on / off state of the spur; when radio frequency signals are allowed to pass through this path, the switching transistor closes; when radio frequency signals are blocked from passing through this path, the switching transistor opens. Stacked switching transistors. , and switching transistors , and All are connected in parallel to ground. When radio frequency signals are allowed to pass through this path, the switching transistor is turned off to prevent radio frequency signals from leaking to ground. At the same time, the microstrip line... With stacked switching transistors , The turn-off capacitors form an L-type matching network with the microstrip line. microstrip lines and switching transistors The turn-off capacitors form a T-type matching network, which is connected in series to form a broadband matching network, transmitting the radio frequency signal to the switching transistor. Finally, by switching transistors Turn-off capacitor and microstrip line and switching transistors Turn-off capacitor and microstrip line Two L-shaped matching networks are formed to output the RF signal to port 2 in a good manner; when the RF signal is blocked from passing through this path, the switching transistor closes, short-circuiting the RF signal to ground and improving the port isolation.

[0040] For ports 1 through 4, microstrip lines Used as a port 1 to switch transistor Matching at the point, switching transistor This controls the on / off state of the spur; when radio frequency signals are allowed to pass through this path, the switching transistor closes; when radio frequency signals are blocked from passing through this path, the switching transistor opens. Stacked switching transistors. , and switching transistors , All are connected in parallel to ground. When radio frequency signals are allowed to pass through this path, the switching transistor is turned off to prevent radio frequency signals from leaking to ground. (Microstrip line) , , Respectively with stacked switching transistors , Switching transistors and switching transistors The turn-off capacitors form a multi-section L-shaped matching network, which is then connected to the microstrip line. , The T-type matching network formed by the capacitor C1 is connected in series to output the RF signal to port 4. When the RF signal is blocked from passing through this path, the switching transistor closes, short-circuiting the RF signal to ground and improving the port isolation.

[0041] like Figure 1 As shown, the entire single-pole five-throw switch requires seven sets of positive and negative voltages to control the on / off state of seven switch branches, namely, port 1 to node A, node A to port 2, node A to port 3, port 1 to port 4, port 1 to node B, node B to port 5, and node B to port 6. To reduce the number of control voltages while meeting the requirements for switch transmission performance and isolation, the control voltages of the switching transistors from node A to port 2 and from node A to port 3 are connected to the control voltages of the switching transistors from node B to port 5 and from node B to port 6, respectively. Simultaneously, the switch employs five voltage control modules. The power supply ports (VDD, VEE) of each voltage control module can be used in parallel, and only one control voltage input is needed to output a set of positive and negative voltages to control the corresponding switch branch. Ultimately, only five voltage control ports and two power supply ports are needed to control the on / off state of each branch of the single-pole five-throw switch chip, significantly reducing the number of external voltage interfaces, simplifying use, and improving chip integration. The twenty-five gate resistors connected in series between the gate of the switching transistor and the voltage control module are mainly used to isolate the mutual influence between the DC control voltage and the radio frequency signal.

[0042] The circuit schematic of the voltage control module is as follows: Figure 1 As shown in the dashed box in the lower left corner, the control voltage is input from the Vin port. After passing through the voltage divider branch formed by resistor RT4, transistor T1, and resistor RT1, it outputs an inverted voltage at port VOL. Simultaneously, the control voltage passes through the voltage divider branch formed by resistor RT4, transistor T2, and resistor RT2, and outputs an inverted voltage at node C. This voltage then passes through the voltage divider branch formed by resistor RT5, transistor T3, and resistor RT3, and outputs a non-inverted voltage at port VOH. For example, in practical applications, power supply ports VDD and VEE are supplied with 1V and -5V respectively. When the Vin input is high, transistors T1 and T2 are turned on, and both the VOL output voltage and the node C voltage are -5V. At this time, transistor T3 is turned off, and the VOH output voltage is 1V. When the Vin input is low, the output voltages at the two ports are opposite; that is, the VOL output voltage is 1V, and the VOH output voltage is -5V.

[0043] Example 3 This embodiment is a design example implemented using Win Semiconductors' GaAs PHEMT technology. Its circuit schematic and voltage control circuit are as follows: Figure 1 As shown. The simulation software used is Advanced Design System 2021, and the detailed simulation results of its layout are as follows. Figure 2 , Figure 3 , Figure 4 , Figure 5 , Figure 6 As shown.

[0044] Figure 2 These are simulation results of transmission performance and isolation when the signal is transmitted from port 1 to port 2. The operating frequency band is 0-18GHz, the loss is less than 2.0dB, the return loss at port 1 is better than -18.9dB, the return loss at port 2 is better than -27.2dB, and the isolation is better than 34.4dB. Figure 2 (a) shows the simulation results of transmission performance. Figure 2 (b) shows the simulation results of isolation.

[0045] Figure 3 These are simulation results of transmission performance and isolation when the signal is transmitted from port 1 to port 3. The operating frequency band is 0-18GHz, the loss is less than 2.0dB, the return loss at port 1 is better than -16.7dB, the return loss at port 3 is better than -18.2dB, and the isolation is better than 39.0dB. Figure 3 (a) shows the simulation results of transmission performance. Figure 3 (b) shows the simulation results of isolation.

[0046] Figure 4 These are simulation results of transmission performance and isolation when the signal is transmitted from port 1 to port 4. The operating frequency band is 0-24GHz, the loss is less than 2.2dB, the return loss at port 1 is better than -13.3dB, the return loss at port 4 is better than -16.6dB, and the isolation is better than 32.7dB. Figure 4 (a) shows the simulation results of transmission performance. Figure 4 (b) shows the simulation results of isolation.

[0047] Figure 5 These are simulation results of transmission performance and isolation when the signal is transmitted from port 1 to port 5. The operating frequency band is 0-18GHz, the loss is less than 2.1dB, the return loss at port 1 is better than -18.4dB, the return loss at port 5 is better than -31.5dB, and the isolation is better than 33.3dB. Figure 5 (a) shows the simulation results of transmission performance. Figure 5 (b) shows the simulation results of isolation.

[0048] Figure 6 These are simulation results of transmission performance and isolation when the signal is transmitted from port 1 to port 6. The operating frequency band is 0-18GHz, the loss is less than 2.1dB, the return loss at port 1 is better than -17.4dB, the return loss at port 6 is better than -33.3dB, and the isolation is better than 33.3dB. Figure 6 (a) shows the simulation results of transmission performance. Figure 6 (b) shows the simulation results of isolation.

[0049] Based on the simulation results of the above layout, the proposed single-pole five-throw switch chip enables signal transmission from the input port to any of the five output ports. The operating frequency bands for ports 1 to 4 are 0-24GHz, while the operating frequency bands for the remaining ports are 0-18GHz, demonstrating excellent overall performance. The physical dimensions of this on-chip single-pole five-throw switch are 1.7mm × 1.9mm.

[0050] The key feature of this invention is the adoption of a single-input, five-output switching circuit structure. A matching circuit consisting of multiple microstrip lines connected in series and parallel ground-connected switching transistors is introduced between the input and each output terminal. Furthermore, a voltage control module is integrated, significantly reducing voltage control requirements. This invention is characterized by its miniaturization and excellent performance.

[0051] This invention relates to a single-pole five-throw switch, which employs a single-branch input, three-way switch output, and a switch circuit structure where the upper and lower branches each have two separate switch outputs. This circuit structure not only enables a single RF module to cascade and communicate with any of the other five RF modules, but also significantly expands the operating bandwidth of the middle branch and reduces insertion loss while ensuring good transmission performance of the upper and lower branches.

[0052] For the input branch, this invention utilizes a single-segment microstrip line to maintain good input return loss over a wide bandwidth. For each transmission branch, the series-connected switching transistors effectively control the on / off state of that branch; the parallel-connected ground-connected switching transistors not only provide good broadband matching with the series-connected microstrip line when the branch is on, enabling low-loss RF signal transmission, but also short-circuit any RF signal leaking into that branch to ground when the branch is off, improving port isolation and preventing RF interference to the on-state branch, thus avoiding performance degradation. Furthermore, the matching structure formed by the turn-off capacitor of the switching transistors and the microstrip line in the output branch optimizes the return loss at the output end over a wide bandwidth.

[0053] This invention relates to a voltage control module for a single-pole five-throw switch. It can achieve the function of a single voltage input and output two positive and negative control voltages. By connecting the control voltages of the two upper and two lower branches respectively, the number of control voltages is greatly reduced. This enables flexible switching between one input branch and five output branches, making the control simple, convenient to use, and enriching the application scenarios.

[0054] The device embodiments described above are merely illustrative. The modules described as separate components may or may not be physically separate, and the components shown as modules may or may not be physical modules; that is, they may be located in one place or distributed across multiple network modules. Some or all of the modules can be selected to achieve the purpose of this embodiment according to actual needs. Those skilled in the art can understand and implement this without any creative effort.

[0055] Through the detailed description of the above embodiments, those skilled in the art can clearly understand that each implementation method can be implemented by means of software plus necessary general-purpose hardware platforms, and of course, it can also be implemented by hardware. Based on this understanding, the above technical solutions, in essence or the part that contributes to the prior art, can be embodied in the form of a software product. This computer software product can be stored in a computer-readable storage medium, including read-only memory (ROM), random access memory (RAM), programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), one-time programmable read-only memory (OTPROM), electrically-erasable programmable read-only memory (EEPROM), compact disc read-only memory (CD-ROM) or other optical disc storage, disk storage, magnetic tape storage, or any other computer-readable medium that can be used to carry or store data.

[0056] Finally, it should be noted that the wideband high isolation single-pole five-throw switch chip disclosed in the embodiments of the present invention is only a preferred embodiment of the present invention and is only used to illustrate the technical solutions of the present invention, not to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A wideband, high-isolation single-pole five-throw switch chip, characterized in that, It includes six ports, two power ports, five control ports, twenty microstrip lines, one capacitor C1, twenty-five switching transistors, twenty-five gate resistors, and five voltage control modules; The six ports include port 1, port 2, port 3, port 4, port 5, and port 6; Port 1 is an RF input port; ports 2, 3, 4, 5, and 6 are output ports. The RF input port and the output port are connected through the two power ports, the five control ports, the twenty microstrip lines, the capacitor C1, the twenty-five switching transistors, the twenty-five gate resistors, and the five voltage control modules.

2. The wideband, high isolation single-pole five-throw switch chip according to claim 1, characterized in that, The two power ports include power supply port 1 and power supply port 2; The five control ports include control port 1, control port 2, control port 3, control port 4 and control port 5; The twenty microstrip lines include , , , , , , , , , , , , , , , , , , and ; The twenty-five switching transistors include , , , , , , , , , , , , , , , , , , , , , , , and ; The twenty-five gate resistors include , , , , , , , , , , , , , , , , , , , , , , , and .

3. The wideband, high isolation single-pole five-throw switch chip according to claim 1, characterized in that, The five voltage control modules include voltage control module 1, voltage control module 2, voltage control module 3, voltage control module 4 and voltage control module 5; each voltage control module consists of five resistors and three transistors.

4. The wideband, high isolation single-pole five-throw switch chip according to claim 2, characterized in that, Port 1 is connected via a microstrip line. Match to each output port; Switching transistors With microstrip lines After being connected in series, it is connected to the stacked switching transistors connected in series to ground. , Parallel connection, with microstrip lines , and switching transistors The resulting T-type matching network is connected in series with the switching transistor. Series connection, and series-connected grounded switching transistors Parallel connection, with microstrip lines , and switching transistors The resulting T-shaped matching network is connected in series to obtain the branch structure of port 2.

5. The wideband, high isolation single-pole five-throw switch chip according to claim 2, characterized in that, The switching transistor With microstrip lines After being connected in series, it is connected to the stacked switching transistors connected in series to ground. , Parallel connection, with two sections of microstrip line and parallel switching transistor to ground and microstrip lines and parallel switching transistor to ground The L-shaped matching network is connected in series with the microstrip line. , The T-type matching network formed by the capacitor C1 to ground is connected in series to obtain the branch structure of port 4.

6. The wideband, high isolation single-pole five-throw switch chip according to claim 2, characterized in that, The power supply ports of the voltage control module 1 are VDD and VEE, the control voltage input port is Vin, and the voltage output ports are VOH and VOL. Resistors RT1, RT2, and RT3 are connected in series between the drains of transistors T1, T2, and T3, which are connected to the power supply VDD, respectively. Resistor RT4 is connected in series between the gates of transistors T1 and T2, and resistor RT5 is connected in series between the gate of transistor T3.

7. The wideband, high isolation single-pole five-throw switch chip according to claim 2, characterized in that, The twenty-five gate resistors , , , , , , , , , , , , , , , , , , , , , , , 、 Connected to the switching transistor respectively , , , , , , , , , , , , , , , , , , , , , , , , Between the gate and the voltage control module.

8. The wideband, high isolation single-pole five-throw switch chip according to claim 2, characterized in that, The microstrip line Used for switching transistors at port 1 Matching between them, switching transistors and The control segment is switched on and off; when radio frequency signals are allowed to pass, the switching transistor closes. When radio frequency signals are blocked, the switching transistor is turned off; Stacked switching transistors , and switching transistors , and All are connected in parallel to ground. When radio frequency signals are allowed to pass through, the switching transistors are turned off to prevent radio frequency signals from leaking to ground. microstrip line With stacked switching transistors , The turn-off capacitors form an L-type matching network with the microstrip line. microstrip lines and switching transistors The turn-off capacitors form a T-type matching network connected in series, thus forming a broadband matching network; Transmit radio frequency signals to the switching transistor By switching transistors Turn-off capacitor and microstrip line and switching transistors Turn-off capacitor and microstrip line Two L-shaped matching networks are formed to output the radio frequency signal to port 2; when the radio frequency signal is blocked, the switching transistor closes, short-circuiting the radio frequency signal to ground, thereby improving port isolation.

9. The wideband, high isolation single-pole five-throw switch chip according to claim 2, characterized in that, For ports 1 to 4, microstrip lines Used to switch transistor at port 1 Matching, switching transistors The control segment is switched on and off; when radio frequency signals are allowed to pass, the switching transistor closes. When radio frequency signals are blocked, the switching transistor is turned off; Stacked switching transistors , and switching transistors , All are connected in parallel to ground. When radio frequency signals are allowed to pass through, the switching transistors are turned off to prevent radio frequency signals from leaking to ground. microstrip line , , Respectively with stacked switching transistors , Switching transistors and switching transistors The turn-off capacitors form an L-type matching network with the microstrip line. , The T-type matching network formed by capacitor C1 is connected in series to output the radio frequency signal to port 4; when the radio frequency signal is blocked from passing through, the switching transistor closes, short-circuiting the radio frequency signal to ground, thereby improving the port isolation.

10. The wideband, high-isolation single-pole five-throw switch chip according to claim 6, characterized in that, The control voltage of the voltage control module 1 is input from the Vin port, and after passing through the voltage divider branch formed by resistor RT4, transistor T1 and resistor RT1, it outputs an inverted voltage at the VOL port. After the control voltage passes through the voltage divider branch formed by resistor RT4, transistor T2, and resistor RT2, an inverted voltage is output at node C. The inverted voltage is output as a non-inverted voltage at port VOH after passing through the voltage divider branch formed by resistor RT5, transistor T3, and resistor RT3.

Images