Initial defect generation mechanism of IGBT under complex working conditions and active thermal management method
By acquiring the initial attributes and operating environment information of the IGBT module, and combining the influence factors of temperature field, stress field and electric field, the thermal management method is precisely corrected, which solves the problem of thermal management accuracy of IGBT devices under complex operating conditions in the prior art, and improves the reliability and lifespan of the device.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- COLLEGE OF MOBILE TELECOMM CHONGQING UNIV OF POSTS & TELECOMM
- Filing Date
- 2025-12-30
- Publication Date
- 2026-05-29
AI Technical Summary
Existing technologies have low accuracy in thermal management of IGBT devices under complex operating conditions and cannot effectively address failure issues caused by IGBT junction temperature fluctuations.
By acquiring the initial attribute information and current operating environment information of the IGBT module, a reference thermal management method is determined and modified, a target thermal management method is generated, and the thermal management method is precisely modified by combining the solder layer void size and chip distribution information, taking into account the influence factors of temperature field, stress field and electric field.
This improves the accuracy of IGBT thermal management and enhances device reliability and lifespan under complex operating conditions.
Smart Images
Figure CN122113354A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of data processing technology, specifically to a mechanism for the generation of initial defects in IGBTs under complex operating conditions and an active thermal management method. Background Technology
[0002] IGBTs, core components in devices such as wind power, new energy vehicles, and industrial robots, operate under complex task conditions. Due to factors such as IGBT junction temperature fluctuations, IGBT devices may fail. Therefore, thermal management is necessary. Existing thermal management solutions typically rely on a single parameter such as temperature, resulting in low accuracy in thermal management. Summary of the Invention
[0003] This application provides a mechanism for the generation of initial defects in IGBTs under complex operating conditions and an active thermal management method. It can determine the thermal management method based on the initial attribute information and operating environment information of the IGBT, thereby improving the accuracy of subsequent thermal management.
[0004] A first aspect of this application provides a mechanism for the generation of initial defects in IGBTs under complex operating conditions and an active thermal management method, the method comprising: Obtain the initial attribute information of the IGBT module; A reference thermal management method is determined based on the initial attribute information; Obtain the current operating environment information of the IGBT module; Determine management correction information based on the current operating environment information; The reference thermal management method is modified using the management correction information to obtain the target thermal management method.
[0005] In one possible implementation, the method for determining the reference thermal management based on the initial attribute information includes: Extract the initial void size of the solder layer and chip distribution information from the initial attribute information; The first operating information of the IGBT module under the preset temperature field is determined based on the initial void size of the solder layer and the chip distribution information. The second operating information of the IGBT module under a preset stress field is determined based on the initial void size of the solder layer and the chip distribution information. The third operating information of the IGBT module under the preset electric field is determined based on the initial void size of the solder layer and the chip distribution information. The reference thermal management method is determined based on the first operating information, the second operating information, and the third operating information.
[0006] In one possible implementation, determining the first operating information of the IGBT module under a preset temperature field based on the initial void size of the solder layer and the chip distribution information includes: The first operational influence factor for obtaining the initial void size of the solder layer; The second operational influencing factor for obtaining chip distribution information; The first impact factor and the second impact factor are fused to obtain the target operational impact factor; Based on the standard operating information corresponding to the IGBT with the standard attribute information under the preset temperature field and the target operating influence factor, the first operating information is obtained by prediction.
[0007] In one possible implementation, determining the management correction information based on the current operating environment information includes: Determine the target environmental impact information based on the current operating environment information; Management correction information is determined based on the target environmental impact information.
[0008] In one possible implementation, determining the target environmental impact information based on the current operating environment information includes: Extract the operating environment temperature information and the operating environment field force information from the current operating environment information; The first reference environmental impact information is determined based on the operating environment temperature information; The second reference environmental impact information is determined based on the field force information of the operating environment. The first reference environmental impact information and the second reference environmental impact information are fused to obtain the target environmental impact information.
[0009] A second aspect of this application provides a mechanism for the generation of initial defects in IGBTs under complex operating conditions and an active thermal management device, the device comprising: The acquisition unit is used to acquire the initial attribute information of the IGBT module; A determining unit is configured to determine a reference thermal management method based on the initial attribute information; The acquisition unit is also used to acquire the current operating environment information of the IGBT module; The determining unit is further configured to determine management correction information based on the current operating environment information; The correction unit is used to correct the reference thermal management method using the management correction information to obtain the target thermal management method.
[0010] In one possible implementation, in determining the reference thermal management method based on the initial attribute information, the determining unit is specifically used for: Extract the initial void size of the solder layer and chip distribution information from the initial attribute information; The first operating information of the IGBT module under the preset temperature field is determined based on the initial void size of the solder layer and the chip distribution information. The second operating information of the IGBT module under a preset stress field is determined based on the initial void size of the solder layer and the chip distribution information. The third operating information of the IGBT module under the preset electric field is determined based on the initial void size of the solder layer and the chip distribution information. The reference thermal management method is determined based on the first operating information, the second operating information, and the third operating information.
[0011] In one possible implementation, regarding the determination of the first operating information of the IGBT module under a preset temperature field based on the initial void size of the solder layer and chip distribution information, the determining unit is specifically used for: The first operational influence factor for obtaining the initial void size of the solder layer; The second operational influencing factor for obtaining chip distribution information; The first impact factor and the second impact factor are fused to obtain the target operational impact factor; Based on the standard operating information corresponding to the IGBT with the standard attribute information under the preset temperature field and the target operating influence factor, the first operating information is obtained by prediction.
[0012] In one possible implementation, regarding the determination of management correction information based on the current operating environment information, the determining unit is specifically used for: Determine the target environmental impact information based on the current operating environment information; Management correction information is determined based on the target environmental impact information.
[0013] In one possible implementation, regarding the determination of the target environmental impact information based on the current operating environment information, the determining unit is specifically used for: Extract the operating environment temperature information and the operating environment field force information from the current operating environment information; The first reference environmental impact information is determined based on the operating environment temperature information; The second reference environmental impact information is determined based on the field force information of the operating environment. The first reference environmental impact information and the second reference environmental impact information are fused to obtain the target environmental impact information.
[0014] A third aspect of this application provides a terminal including a processor, an input device, an output device, and a memory, wherein the processor, input device, output device, and memory are interconnected, wherein the memory is used to store a computer program, the computer program including program instructions, and the processor is configured to invoke the program instructions to execute the step instructions as described in the first aspect of this application.
[0015] A fourth aspect of this application provides a computer-readable storage medium storing a computer program for electronic data interchange, wherein the computer program causes a computer to perform some or all of the steps described in the first aspect of this application.
[0016] A fifth aspect of this application provides a computer program product, wherein the computer program product includes a non-transitory computer-readable storage medium storing a computer program operable to cause a computer to perform some or all of the steps described in the first aspect of this application. The computer program product may be a software installation package.
[0017] Implementing the embodiments of this application has at least the following beneficial effects: By acquiring the initial attribute information of the IGBT module, determining a reference thermal management method based on the initial attribute information, acquiring the current operating environment information of the IGBT module, determining management correction information based on the current operating environment information, and using the management correction information to correct the reference thermal management method, a target thermal management method is obtained. Therefore, the thermal management method can be determined based on the initial attribute information and operating environment information of the IGBT, thereby improving the accuracy of subsequent thermal management. Attached Figure Description
[0018] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0019] Figure 1 This application provides a flowchart illustrating the mechanism for the generation of initial defects in IGBTs under complex operating conditions and an active thermal management method. Figure 2 This is a schematic diagram of the structure of a terminal provided in an embodiment of this application; Figure 3This application provides a schematic diagram of the mechanism for the generation of initial defects in IGBTs under complex operating conditions and the structure of an active thermal management device. Detailed Implementation
[0020] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.
[0021] The terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish different objects, not to describe a specific order. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or apparatus that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or apparatuses.
[0022] In this application, the reference to "embodiment" means that a specific feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a mutually exclusive, independent, or alternative embodiment. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described in this application can be combined with other embodiments.
[0023] Please see Figure 1 , Figure 1 This application provides a flowchart illustrating the initial defect generation mechanism of IGBTs under complex operating conditions and an active thermal management method. (See attached diagram.) Figure 1 As shown, the method includes: 101. Obtain the initial attribute information of the IGBT module.
[0024] The IGBT module can be an insulated gate bipolar transistor module. Its initial attribute information can include the initial void size of the solder layer, chip distribution information, etc.
[0025] 102. Determine a reference thermal management method based on the initial attribute information.
[0026] In one possible implementation, the method for determining the reference thermal management based on the initial attribute information includes: The initial void size and chip distribution information of the solder layer are extracted from the initial attribute information; the first operating information of the IGBT module under a preset temperature field is determined based on the initial void size and chip distribution information of the solder layer; the second operating information of the IGBT module under a preset stress field is determined based on the initial void size and chip distribution information of the solder layer; the third operating information of the IGBT module under a preset electric field is determined based on the initial void size and chip distribution information of the solder layer; and the reference thermal management method is determined based on the first operating information, the second operating information, and the third operating information.
[0027] Therefore, the operational influence factors corresponding to the initial void size of the solder layer and the chip distribution information can be obtained separately, and then combined with the operational influence factors to obtain the first operational information. Specifically, the second and third operational information can be obtained by referring to the method of obtaining the first operational information.
[0028] One method for determining the first operating information of an IGBT module under a preset temperature field based on the initial void size of the solder layer and chip distribution information includes: The first operational influence factor for obtaining the initial void size of the solder layer; The second operational influencing factor for obtaining chip distribution information; The first impact factor and the second impact factor are fused to obtain the target operational impact factor; Based on the standard operating information corresponding to the IGBT with the standard attribute information under the preset temperature field and the target operating influence factor, the first operating information is obtained by prediction.
[0029] Specifically, the first operational influence factor corresponding to the initial void size of the solder layer can be obtained according to the preset mapping relationship, and the second operational influence factor corresponding to the chip distribution information can be obtained according to the preset mapping relationship between chip distribution information and influence factor.
[0030] The standard attribute information under the preset temperature field can be a reference value set through empirical values or historical data. The product between the standard operating information and the target operating influencing factor can be determined as the first operating information.
[0031] Finally, the first operating information, the second operating information, and the third operating information are input into a preset thermal management method generation model to generate the reference thermal management method. The preset thermal management method model is a pre-trained model used to generate the thermal management method.
[0032] 103. Obtain the current operating environment information of the IGBT module.
[0033] Specifically, it can obtain the current operating environment information of the device corresponding to the IGBT module, which includes operating environment temperature information and operating environment force field information.
[0034] 104. Determine management correction information based on the current operating environment information.
[0035] In one possible implementation, determining the management correction information based on the current operating environment information includes: Determine the target environmental impact information based on the current operating environment information; Management correction information is determined based on the target environmental impact information.
[0036] Among them, management correction information corresponding to the target environmental impact information can be obtained based on the preset mapping relationship between environmental impact information and management correction information.
[0037] Specifically, a method for determining target environmental impact information based on the current operating environment information includes: Extract the operating environment temperature information and the operating environment field force information from the current operating environment information; The first reference environmental impact information is determined based on the operating environment temperature information; The second reference environmental impact information is determined based on the field force information of the operating environment. The first reference environmental impact information and the second reference environmental impact information are fused to obtain the target environmental impact information.
[0038] Specifically, the first reference environmental impact information corresponding to the operating environment temperature information can be obtained based on the preset mapping curve between the ambient temperature and the environmental impact information, and the second reference environmental impact information can be determined based on the preset mapping relationship between the environmental field force information and the environmental impact information.
[0039] The target environmental impact information can be obtained by weighting the first and second reference environmental impact information. Specifically, the weights corresponding to the first and second reference environmental impact information can be obtained, and then the weights can be calculated to obtain the target environmental impact information. The weights can be preset.
[0040] 105. The reference thermal management method is modified using the management correction information to obtain the target thermal management method.
[0041] The parameters corresponding to the management correction information in the reference thermal management method can be replaced with the parameters in the management correction information to obtain the target thermal management method.
[0042] In this example, by obtaining the initial attribute information of the IGBT module, a reference thermal management method is determined based on the initial attribute information. The current operating environment information of the IGBT module is obtained, and management correction information is determined based on the current operating environment information. The reference thermal management method is then corrected using the management correction information to obtain the target thermal management method. Therefore, the thermal management method can be determined based on the initial attribute information and operating environment information of the IGBT, thereby improving the accuracy of subsequent thermal management.
[0043] For examples consistent with the above embodiments, please refer to... Figure 2 , Figure 2 This is a schematic diagram of the structure of a terminal provided in an embodiment of this application, such as... Figure 2 As shown, the system includes a processor, an input device, an output device, and a memory, which are interconnected. The memory stores a computer program, which includes program instructions. The processor is configured to invoke the program instructions. The program includes instructions for performing the following steps. Obtain the initial attribute information of the IGBT module; A reference thermal management method is determined based on the initial attribute information; Obtain the current operating environment information of the IGBT module; Determine management correction information based on the current operating environment information; The reference thermal management method is modified using the management correction information to obtain the target thermal management method.
[0044] The above mainly describes the solutions of the embodiments of this application from the perspective of the method execution process. It is understood that, in order to achieve the above functions, the terminal includes the corresponding hardware structure and / or software modules for executing each function. Those skilled in the art should readily recognize that, in conjunction with the units and algorithm steps of the various examples described in the embodiments provided herein, this application can be implemented in hardware or a combination of hardware and computer software. Whether a function is executed in hardware or by computer software driving hardware depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.
[0045] This application embodiment can divide the terminal into functional units according to the above method example. For example, each function can be divided into a separate functional unit, or two or more functions can be integrated into one processing unit. The integrated unit can be implemented in hardware or as a software functional unit. It should be noted that the unit division in this application embodiment is illustrative and only represents one logical functional division. In actual implementation, there may be other division methods.
[0046] For those consistent with the above, please refer to Figure 3 , Figure 3 This application provides a schematic diagram illustrating the mechanism of initial defect generation in IGBTs under complex operating conditions and the structure of an active thermal management device. (See attached diagram.) Figure 3 As shown, the device includes: Acquisition unit 301 is used to acquire the initial attribute information of the IGBT module; Determining unit 302 is used to determine a reference thermal management method based on the initial attribute information; The acquisition unit 301 is also used to acquire the current operating environment information of the IGBT module; The determining unit 302 is further configured to determine management correction information based on the current operating environment information; The correction unit 303 is used to correct the reference thermal management method using the management correction information to obtain the target thermal management method.
[0047] In one possible implementation, in determining the reference thermal management method based on the initial attribute information, the determining unit 302 is specifically used for: Extract the initial void size of the solder layer and chip distribution information from the initial attribute information; The first operating information of the IGBT module under the preset temperature field is determined based on the initial void size of the solder layer and the chip distribution information. The second operating information of the IGBT module under a preset stress field is determined based on the initial void size of the solder layer and the chip distribution information. The third operating information of the IGBT module under the preset electric field is determined based on the initial void size of the solder layer and the chip distribution information. The reference thermal management method is determined based on the first operating information, the second operating information, and the third operating information.
[0048] In one possible implementation, in determining the first operating information of the IGBT module under a preset temperature field based on the initial void size of the solder layer and chip distribution information, the determining unit 302 is specifically used for: The first operational influence factor for obtaining the initial void size of the solder layer; The second operational influencing factor for obtaining chip distribution information; The first impact factor and the second impact factor are fused to obtain the target operational impact factor; Based on the standard operating information corresponding to the IGBT with the standard attribute information under the preset temperature field and the target operating influence factor, the first operating information is obtained by prediction.
[0049] In one possible implementation, the determining unit 302 is specifically used for determining the management correction information based on the current operating environment information: Determine the target environmental impact information based on the current operating environment information; Management correction information is determined based on the target environmental impact information.
[0050] In one possible implementation, regarding the determination of the target environmental impact information based on the current operating environment information, the determining unit 302 is specifically configured to: Extract the operating environment temperature information and the operating environment field force information from the current operating environment information; The first reference environmental impact information is determined based on the operating environment temperature information; The second reference environmental impact information is determined based on the field force information of the operating environment. The first reference environmental impact information and the second reference environmental impact information are fused to obtain the target environmental impact information.
[0051] This application also provides a computer storage medium storing a computer program for electronic data interchange, which causes a computer to execute some or all of the steps of the IGBT initial defect generation mechanism and active thermal management method under any of the complex operating conditions described in the above method embodiments.
[0052] This application also provides a computer program product, which includes a non-transitory computer-readable storage medium storing a computer program that causes a computer to perform some or all of the steps of the IGBT initial defect generation mechanism and active thermal management method under any of the complex operating conditions described in the above method embodiments.
[0053] It should be noted that, for the sake of simplicity, the foregoing method embodiments are all described as a series of actions. However, those skilled in the art should understand that this application is not limited to the described order of actions, as some steps may be performed in other orders or simultaneously according to this application. Furthermore, those skilled in the art should also understand that the embodiments described in the specification are preferred embodiments, and the actions and modules involved are not necessarily essential to this application.
[0054] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.
[0055] In the several embodiments provided in this application, it should be understood that the disclosed apparatus can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection between devices or units may be electrical or other forms.
[0056] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.
[0057] Furthermore, the functional units in the various embodiments of the application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software program module.
[0058] If the integrated unit is implemented as a software program module and sold or used as an independent product, it can be stored in a computer-readable storage device (CMD). Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a memory and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this application. The aforementioned memory includes various media capable of storing program code, such as USB flash drives, read-only memory (ROM), random access memory (RAM), portable hard drives, magnetic disks, or optical disks.
[0059] Those skilled in the art will understand that all or part of the steps in the various methods of the above embodiments can be implemented by a program instructing related hardware. The program can be stored in a computer-readable storage device, which may include: a flash drive, a read-only memory, a random access memory, a magnetic disk, or an optical disk, etc.
[0060] The embodiments of this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.
Claims
1. A mechanism for the generation of initial defects in IGBTs under complex operating conditions and an active thermal management method, characterized in that, The method includes: Obtain the initial attribute information of the IGBT module; A reference thermal management method is determined based on the initial attribute information; Obtain the current operating environment information of the IGBT module; Determine management correction information based on the current operating environment information; The reference thermal management method is modified using the management correction information to obtain the target thermal management method.
2. The IGBT initial defect generation mechanism and active thermal management method under complex operating conditions as described in claim 1, characterized in that, The method for determining the reference thermal management based on the initial attribute information includes: Extract the initial void size of the solder layer and chip distribution information from the initial attribute information; The first operating information of the IGBT module under the preset temperature field is determined based on the initial void size of the solder layer and the chip distribution information. The second operating information of the IGBT module under a preset stress field is determined based on the initial void size of the solder layer and the chip distribution information. The third operating information of the IGBT module under the preset electric field is determined based on the initial void size of the solder layer and the chip distribution information. The reference thermal management method is determined based on the first operating information, the second operating information, and the third operating information.
3. The IGBT initial defect generation mechanism and active thermal management method under complex operating conditions as described in claim 2, characterized in that, The step of determining the first operating information of the IGBT module under a preset temperature field based on the initial void size of the solder layer and the chip distribution information includes: The first operational influence factor for obtaining the initial void size of the solder layer; The second operational influencing factor for obtaining chip distribution information; The first impact factor and the second impact factor are fused to obtain the target operational impact factor; Based on the standard operating information corresponding to the IGBT with the standard attribute information under the preset temperature field and the target operating influence factor, the first operating information is obtained by prediction.
4. The IGBT initial defect generation mechanism and active thermal management method under complex operating conditions as described in claim 3, characterized in that, The step of determining management correction information based on the current operating environment information includes: Determine the target environmental impact information based on the current operating environment information; Management correction information is determined based on the target environmental impact information.
5. The IGBT initial defect generation mechanism and active thermal management method under complex operating conditions as described in claim 4, characterized in that, The step of determining the target environmental impact information based on the current operating environment information includes: Extract the operating environment temperature information and the operating environment field force information from the current operating environment information; The first reference environmental impact information is determined based on the operating environment temperature information; The second reference environmental impact information is determined based on the field force information of the operating environment. The first reference environmental impact information and the second reference environmental impact information are fused to obtain the target environmental impact information.
6. A mechanism for the generation of initial defects in IGBTs under complex operating conditions and an active thermal management device, characterized in that, The device includes: The acquisition unit is used to acquire the initial attribute information of the IGBT module; A determining unit is configured to determine a reference thermal management method based on the initial attribute information; The acquisition unit is also used to acquire the current operating environment information of the IGBT module; The determining unit is further configured to determine management correction information based on the current operating environment information; The correction unit is used to correct the reference thermal management method using the management correction information to obtain the target thermal management method.
7. The IGBT initial defect generation mechanism and active thermal management method under complex operating conditions as described in claim 6, characterized in that, In determining the reference thermal management method based on the initial attribute information, the determining unit is specifically used for: Extract the initial void size of the solder layer and chip distribution information from the initial attribute information; The first operating information of the IGBT module under the preset temperature field is determined based on the initial void size of the solder layer and the chip distribution information. The second operating information of the IGBT module under a preset stress field is determined based on the initial void size of the solder layer and the chip distribution information. The third operating information of the IGBT module under the preset electric field is determined based on the initial void size of the solder layer and the chip distribution information. The reference thermal management method is determined based on the first operating information, the second operating information, and the third operating information.
8. The IGBT initial defect generation mechanism and active thermal management method under complex operating conditions as described in claim 7, characterized in that, In determining the first operating information of the IGBT module under a preset temperature field based on the initial void size of the solder layer and the chip distribution information, the determining unit is specifically used for: The first operational influence factor for obtaining the initial void size of the solder layer; The second operational influencing factor for obtaining chip distribution information; The first impact factor and the second impact factor are fused to obtain the target operational impact factor; Based on the standard operating information corresponding to the IGBT with the standard attribute information under the preset temperature field and the target operating influence factor, the first operating information is obtained by prediction.
9. A terminal, characterized in that, The device includes a processor, an input device, an output device, and a memory, which are interconnected. The memory stores a computer program, which includes program instructions. The processor is configured to invoke the program instructions to execute the IGBT initial defect generation mechanism and active thermal management method under complex operating conditions as described in any one of claims 1-5.
10. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a computer program, which includes program instructions that, when executed by a processor, cause the processor to perform the IGBT initial defect generation mechanism and active thermal management method under complex operating conditions as described in any one of claims 1-5.