Diamond composite copper high-thermal-conductivity material and preparation process thereof

Abstract

This invention relates to the field of heat dissipation materials, specifically a diamond-copper composite high thermal conductivity material and its preparation process. It addresses the problem that existing diamond / copper composite materials have poor overall thermal conductivity, failing to meet the demands of modern electronic devices and high-power devices for high-performance heat dissipation materials. The diamond-copper composite high thermal conductivity material prepared using this process forms a composite structure of diamond, a composite interface layer, and copper, achieving a good composite of diamond and copper with good interfacial bonding stability. This significantly improves the overall performance of the material, resulting in superior high-temperature heat dissipation in practical applications and meeting the needs of modern electronic devices and high-power devices for high-performance heat dissipation materials.

Description

Technical Field

[0001] This invention relates to the field of heat dissipation materials, specifically to a diamond composite copper high thermal conductivity material and its preparation process. Background Technology

[0002] The rapid development of microelectronics and third-generation semiconductor technologies has driven modern electronic devices towards higher integration, multi-functionality, and higher power. However, the rapid upgrading of electronic components has led to a significant increase in their operating speed and a continuous expansion of their operating temperature range, making heat dissipation an increasingly prominent issue and a key factor restricting the reliability and efficiency of electronic devices.

[0003] Diamond has the highest thermal conductivity found in nature, while copper has excellent electrical and thermal conductivity and ductility. Therefore, diamond / copper composites are considered excellent thermal management materials. However, the physicochemical properties of diamond and copper differ greatly, and diamond's surface is inert with extremely poor wettability, making it difficult to form an effective chemical bond with copper. This results in high interfacial thermal resistance, which severely limits the improvement of overall thermal conductivity.

[0004] Therefore, how to improve the poor overall thermal conductivity of existing diamond / copper composite materials, which cannot meet the needs of modern electronic devices and high-power devices for high-performance heat dissipation materials, is an urgent problem to be solved in this application.

[0005] To address the aforementioned technical shortcomings, a solution is proposed. Summary of the Invention

[0006] In order to overcome the above-mentioned technical problems, the present invention aims to provide a diamond-copper composite material with high thermal conductivity and its preparation process, which solves the problem that the overall thermal conductivity of existing diamond / copper composite materials is poor and cannot meet the requirements of modern electronic devices and high-power devices for high-performance heat dissipation materials.

[0007] The objective of this invention can be achieved through the following technical solutions: In a first aspect, this application provides a preparation process for a diamond-copper composite high thermal conductivity material, comprising the following steps: Step 1: Add diamond and sodium hydroxide solution to a three-necked flask equipped with a stirrer and thermometer. Disperse ultrasonically at a frequency of 40-50 kHz for 1-2 hours. Then stir the reaction at a temperature of 20-25℃ and a stirring rate of 200-300 r / min for 10-20 minutes. After that, raise the temperature to 40-50℃ and continue stirring for 2-4 hours. After the reaction is completed, cool the reaction product to room temperature, then centrifuge. Wash the precipitate 2-3 times with distilled water, then place it in a vacuum drying oven and dry it at a temperature of 70-80℃ for 2-3 hours to obtain pretreated diamond. Step 2: Add the pretreated diamond and concentrated nitric acid to a three-necked flask equipped with a stirrer and thermometer. Stir the reaction at 20-25℃ and 200-300 r / min for 10-20 min. Then, raise the temperature to 60-70℃ and continue stirring for 2-4 h. After the reaction is complete, cool the reaction product to room temperature, then filter it under vacuum. Wash the filter cake 2-3 times with distilled water, then place it in a vacuum drying oven and dry it at 50-60℃ for 2-3 h to obtain etched diamond. Step 3: After uniformly mixing the etching diamond, titanium powder, tungsten powder and molten salt, place them in a tube furnace and perform salt bath coating for 1-2 hours at a temperature of 1000-1100℃ and an argon flow rate of 0.1-0.2L / min. Then, cool the furnace and pour it into deionized water for 10-15 hours. After centrifugation, wash the precipitate 2-3 times with distilled water and place it in a vacuum drying oven at a temperature of 90-100℃ for 2-3 hours to obtain coated diamond. Step 4: Add the coated diamond, copper powder, ball milling aid and anhydrous ethanol into the ball mill, and ball mill for 1-2 hours under the conditions of ball-to-material ratio of 5-7 and ball milling speed of 200-400 r / min to obtain the ball milled mixture. Step 5: Place the ball-milled mixture in a vacuum drying oven and dry it at 50-60℃ for 5-10 hours. Then, add it to a mold, apply a vacuum, and sinter it at 100-200MPa and 1000-1200℃ for 40-80 minutes. After that, cool it with the furnace to obtain diamond composite copper high thermal conductivity material.

[0008] In a preferred embodiment of the present invention, the ratio of diamond to sodium hydroxide solution in step one is 5g:30-40mL.

[0009] In a preferred embodiment of the present invention, the diamond in step one has an average particle size of 100 μm; and the sodium hydroxide solution has a mass fraction of 10-15%.

[0010] In a preferred embodiment of the present invention, the ratio of pretreated diamond to concentrated nitric acid in step two is 5g: 50-60mL.

[0011] In a preferred embodiment of the present invention, the concentrated nitric acid in step two has a mass fraction of 68%.

[0012] In a preferred embodiment of the present invention, the ratio of etching diamond, titanium powder, tungsten powder and molten salt in step three is 20g: 6-8g: 18-22g: 40-45g.

[0013] In a preferred embodiment of the present invention, the molten salt in step three is a mixture of sodium chloride and potassium chloride in an equimolar ratio.

[0014] In a preferred embodiment of the present invention, the ratio of the amount of diamond plating, copper powder, ball milling aid and anhydrous ethanol used in step four is 10-20g: 30g: 0.5-2.5g: 80-90mL.

[0015] In a preferred embodiment of the present invention, the ball milling aid in step four is a mixture of triethanolamine and sodium hexametaphosphate in a mass ratio of 1-3:1.

[0016] In a preferred embodiment of the present invention, the average particle size of the copper powder in step four is 5 μm.

[0017] Secondly, this application provides a diamond composite copper high thermal conductivity material, which is prepared using the diamond composite copper high thermal conductivity material preparation process described in the first aspect.

[0018] Compared with the prior art, the beneficial effects of the present invention are: This invention discloses a diamond-copper composite high thermal conductivity material and its preparation process. The process involves ultrasonically dispersing diamond and sodium hydroxide solution, followed by stirring and reaction. After the reaction, the reaction product is cooled, centrifuged, and the precipitate is washed and dried to obtain pretreated diamond. The pretreated diamond is then stirred and reacted with concentrated nitric acid. After the reaction, the reaction product is cooled, vacuum filtered, and the filter cake is washed and dried to obtain etched diamond. The etched diamond, titanium powder, tungsten powder, and molten salt are mixed evenly and then subjected to salt bath plating. The mixture is then immersed in deionized water, centrifuged, and the precipitate is washed and dried to obtain coated diamond. The coated diamond, copper powder, ball milling aid, and anhydrous ethanol are ball milled to obtain a ball-milled mixture. This ball-milled mixture is dried and then sintered to obtain the diamond-copper composite high thermal conductivity material. The preparation process first uses sodium hydroxide solution to remove impurities from the diamond surface, then uses concentrated nitric acid to etch the diamond, thereby changing the nanostructure of the diamond surface, giving it a higher specific surface area and more adhesion sites. Finally, the etched diamond is combined with titanium... Salt bath plating is performed using titanium and tungsten powders. Titanium, as a highly reactive element, preferentially reacts with the diamond surface to form titanium carbide. Titanium carbide has good lattice matching with diamond and excellent thermal conductivity, achieving a strong chemical bond with diamond. The addition of tungsten can form a solid solution or alloy phase with titanium, further improving the overall physical properties and high-temperature stability of the coating. This achieves the formation of a continuous metal layer on the diamond surface, effectively reducing the thermal resistance in the heat transfer path and enhancing the material's thermal conductivity. Furthermore, during the subsequent sintering stage, titanium and tungsten elements in the coating diffuse into the copper matrix, and copper also diffuses into the diamond matrix. During diffusion within the coating, this interdiffusion forms a composite interface layer between the diamond coating and copper, significantly reducing interfacial thermal resistance. By incorporating a ball milling process and utilizing triethanolamine and sodium hexametaphosphate as milling aids, the triethanolamine's multiple hydroxyl groups adsorb onto the particle surface of the milled raw material. Furthermore, sodium hexametaphosphate modulates the surface charge of the particles, promoting uniform dispersion, reducing agglomeration, and ensuring the internal consistency and density of the final pressed material. This guarantees the quality and performance stability of the final diamond-copper composite high thermal conductivity material. Therefore, the diamond-copper composite high thermal conductivity material prepared using this process forms a composite structure of diamond, a composite interface layer, and copper, achieving excellent composite bonding between diamond and copper with good interfacial stability. This greatly improves the material's overall performance, resulting in superior high-temperature heat dissipation in practical applications, meeting the demands of modern electronic devices and high-power devices for high-performance heat dissipation materials. Attached Figure Description

[0019] To facilitate understanding by those skilled in the art, the present invention will be further described below with reference to the accompanying drawings.

[0020] Figure 1This is a schematic diagram illustrating the performance testing of a diamond-copper composite high thermal conductivity material and its preparation process according to the present invention. Detailed Implementation

[0021] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0022] Example 1:

[0023] This embodiment describes a preparation process for a diamond-copper composite high thermal conductivity material, including the following steps: Step 1: Add 5g of diamond with an average particle size of 100μm and 30mL of 10% sodium hydroxide solution to a three-necked flask equipped with a stirrer and thermometer. Disperse the solution ultrasonically at a frequency of 40kHz for 1h. Then, stir the reaction at 20℃ and a stirring rate of 200r / min for 10min. After that, raise the temperature to 40℃ and continue stirring for 2h. After the reaction is completed, cool the reaction product to room temperature, centrifuge it, wash the precipitate twice with distilled water, and then place it in a vacuum drying oven and dry it at 70℃ for 2h to obtain pretreated diamond. Step 2: Add 5g of pretreated diamond and 50mL of 68% concentrated nitric acid to a three-necked flask equipped with a stirrer and thermometer. Stir the reaction at 20℃ and 200r / min for 10min. Then, raise the temperature to 60℃ and continue stirring for 2h. After the reaction is complete, cool the reaction product to room temperature, then filter it under vacuum. Wash the filter cake twice with distilled water and then place it in a vacuum drying oven and dry it at 50℃ for 2h to obtain etched diamond. Step 3: Mix 20g of etching diamond, 6g of titanium powder, 18g of tungsten powder, and 40g of sodium chloride and potassium chloride in an equimolar ratio to form a molten salt. Place the mixture in a tube furnace and perform salt bath coating for 1 hour at 1000℃ and argon flow rate of 0.1L / min. After cooling in the furnace, pour the mixture into deionized water and soak for 10 hours. Then centrifuge the mixture and wash the precipitate twice with distilled water. Place the precipitate in a vacuum drying oven and dry it for 2 hours at 90℃ to obtain coated diamond. Step 4: Add 10g of coated diamond, 30g of copper powder with an average particle size of 5μm, 0.5g of triethanolamine, and sodium hexametaphosphate in a mass ratio of 1:1 to a ball milling aid, along with 80mL of anhydrous ethanol, to a ball mill. Ball mill for 1 hour at a ball-to-material ratio of 5 and a ball milling rate of 200r / min to obtain the ball milling mixture. Step 5: Place the ball-milled mixture in a vacuum drying oven and dry it at 50°C for 5 hours. Then, add it to a mold, vacuum it, and sinter it at 100MPa and 1000°C for 40 minutes. After that, cool it with the furnace to obtain diamond composite copper high thermal conductivity material.

[0024] Example 2:

[0025] This embodiment describes a preparation process for a diamond-copper composite high thermal conductivity material, including the following steps: Step 1: Add 5g of diamond with an average particle size of 100μm and 35mL of 12% sodium hydroxide solution to a three-necked flask equipped with a stirrer and thermometer. Disperse the solution ultrasonically at a frequency of 45kHz for 1.5h. Then, stir the reaction at 22℃ and a stirring rate of 250r / min for 15min. After that, raise the temperature to 45℃ and continue stirring for 3h. After the reaction is completed, cool the reaction product to room temperature, centrifuge it, wash the precipitate twice with distilled water, and then place it in a vacuum drying oven and dry it at 75℃ for 2.5h to obtain pretreated diamond. Step 2: Add 5g of pretreated diamond and 55mL of 68% concentrated nitric acid to a three-necked flask equipped with a stirrer and thermometer. Stir the reaction at 22℃ and 250r / min for 15min. Then, raise the temperature to 65℃ and continue stirring for 3h. After the reaction is complete, cool the reaction product to room temperature, then vacuum filter it. Wash the filter cake twice with distilled water and then place it in a vacuum drying oven at 55℃ for 2.5h to obtain etched diamond. Step 3: Mix 20g of etching diamond, 7g of titanium powder, 20g of tungsten powder, and 42g of sodium chloride and potassium chloride in an equimolar ratio to form a molten salt. Place the mixture in a tube furnace and perform salt bath coating for 1.5h at 1050℃ and argon flow rate of 0.15L / min. After cooling in the furnace, pour the mixture into deionized water and soak for 12h. Then centrifuge the mixture and wash the precipitate twice with distilled water. Finally, place the mixture in a vacuum drying oven and dry it at 95℃ for 2.5h to obtain coated diamond. Step 4: Add 15g of diamond-coated material, 30g of copper powder with an average particle size of 5μm, 1.5g of triethanolamine, and sodium hexametaphosphate in a mass ratio of 2:1 to a ball milling aid, along with 85mL of anhydrous ethanol, to a ball mill. Ball mill for 1.5h at a ball-to-material ratio of 6 and a ball milling rate of 300r / min to obtain the ball milling mixture. Step 5: Place the ball-milled mixture in a vacuum drying oven and dry it at 55°C for 8 hours. Then, add it to a mold, vacuum it, and sinter it at 150MPa and 1100°C for 60 minutes. After that, cool it with the furnace to obtain diamond composite copper high thermal conductivity material.

[0026] Example 3:

[0027] This embodiment describes a preparation process for a diamond-copper composite high thermal conductivity material, including the following steps: Step 1: Add 5g of diamond with an average particle size of 100μm and 40mL of 15% sodium hydroxide solution to a three-necked flask equipped with a stirrer and thermometer. Disperse the mixture ultrasonically at a frequency of 50kHz for 2h. Then, stir the mixture at 25℃ and a stirring rate of 300r / min for 20min. After that, raise the temperature to 50℃ and continue stirring for 4h. After the reaction is completed, cool the reaction product to room temperature, centrifuge it, wash the precipitate three times with distilled water, and then place it in a vacuum drying oven and dry it at 80℃ for 3h to obtain pretreated diamond. Step 2: Add 5g of pretreated diamond and 60mL of 68% concentrated nitric acid to a three-necked flask equipped with a stirrer and thermometer. Stir the reaction at 25℃ and 300r / min for 20min. Then, raise the temperature to 70℃ and continue stirring for 4h. After the reaction is complete, cool the reaction product to room temperature, then filter it under vacuum. Wash the filter cake three times with distilled water, and then place it in a vacuum drying oven and dry it at 60℃ for 3h to obtain etched diamond. Step 3: Mix 20g of etching diamond, 8g of titanium powder, 22g of tungsten powder, and 45g of sodium chloride and potassium chloride in an equimolar ratio to form a molten salt. Place the mixture in a tube furnace and perform salt bath coating for 2 hours at 1100℃ and argon flow rate of 0.2L / min. After cooling in the furnace, pour the mixture into deionized water and soak for 15 hours. Then centrifuge the mixture and wash the precipitate three times with distilled water. Finally, place the mixture in a vacuum drying oven and dry it at 100℃ for 3 hours to obtain coated diamond. Step 4: Add 20g of coated diamond, 30g of copper powder with an average particle size of 5μm, 2.5g of triethanolamine, and sodium hexametaphosphate in a mass ratio of 3:1 to a ball milling aid, along with 90mL of anhydrous ethanol, to a ball mill. Ball mill for 2 hours at a ball-to-material ratio of 7 and a ball milling rate of 400r / min to obtain the ball milling mixture. Step 5: Place the ball-milled mixture in a vacuum drying oven and dry it at 60°C for 10 hours. Then, add it to a mold, vacuum it, and sinter it at 200MPa and 1200°C for 80 minutes. After that, cool it with the furnace to obtain diamond composite copper high thermal conductivity material.

[0028] Comparative Example 1: This comparative example illustrates the preparation process of a diamond-copper composite high thermal conductivity material, including the following steps: Step 1: Add 20g of diamond with an average particle size of 100μm, 30g of copper powder with an average particle size of 5μm and 90mL of anhydrous ethanol to a ball mill and ball mill for 2h at a ball-to-material ratio of 7 and a ball milling rate of 400r / min to obtain the ball milled mixture. Step 2: Place the ball-milled mixture in a vacuum drying oven and dry it at 60°C for 10 hours. Then, add it to a mold, vacuum it, and sinter it at 200MPa and 1200°C for 80 minutes. After that, cool it with the furnace to obtain diamond composite copper high thermal conductivity material.

[0029] Comparative Example 2: This comparative example illustrates the preparation process of a diamond-copper composite high thermal conductivity material, including the following steps: Step 1: Add 5g of diamond with an average particle size of 100μm and 40mL of 15% sodium hydroxide solution to a three-necked flask equipped with a stirrer and thermometer. Disperse the mixture ultrasonically at a frequency of 50kHz for 2h. Then, stir the mixture at 25℃ and a stirring rate of 300r / min for 20min. After that, raise the temperature to 50℃ and continue stirring for 4h. After the reaction is completed, cool the reaction product to room temperature, centrifuge it, wash the precipitate three times with distilled water, and then place it in a vacuum drying oven and dry it at 80℃ for 3h to obtain pretreated diamond. Step 2: Add 5g of pretreated diamond and 60mL of 68% concentrated nitric acid to a three-necked flask equipped with a stirrer and thermometer. Stir the reaction at 25℃ and 300r / min for 20min. Then, raise the temperature to 70℃ and continue stirring for 4h. After the reaction is complete, cool the reaction product to room temperature, then filter it under vacuum. Wash the filter cake three times with distilled water, and then place it in a vacuum drying oven and dry it at 60℃ for 3h to obtain etched diamond. Step 3: Add 20g of etched diamond, 30g of copper powder with an average particle size of 5μm and 90mL of anhydrous ethanol to a ball mill and ball mill for 2 hours at a ball-to-material ratio of 7 and a ball milling rate of 400r / min to obtain the ball milled mixture. Step 4: Place the ball-milled mixture in a vacuum drying oven and dry it at 60°C for 10 hours. Then, add it to a mold, vacuum it, and sinter it at 200MPa and 1200°C for 80 minutes. After that, cool it with the furnace to obtain diamond composite copper high thermal conductivity material.

[0030] Comparative Example 3: This comparative example illustrates the preparation process of a diamond-copper composite high thermal conductivity material, including the following steps: Step 1: Add 5g of diamond with an average particle size of 100μm and 40mL of 15% sodium hydroxide solution to a three-necked flask equipped with a stirrer and thermometer. Disperse the mixture ultrasonically at a frequency of 50kHz for 2h. Then, stir the mixture at 25℃ and a stirring rate of 300r / min for 20min. After that, raise the temperature to 50℃ and continue stirring for 4h. After the reaction is completed, cool the reaction product to room temperature, centrifuge it, wash the precipitate three times with distilled water, and then place it in a vacuum drying oven and dry it at 80℃ for 3h to obtain pretreated diamond. Step 2: Add 5g of pretreated diamond and 60mL of 68% concentrated nitric acid to a three-necked flask equipped with a stirrer and thermometer. Stir the reaction at 25℃ and 300r / min for 20min. Then, raise the temperature to 70℃ and continue stirring for 4h. After the reaction is complete, cool the reaction product to room temperature, then filter it under vacuum. Wash the filter cake three times with distilled water, and then place it in a vacuum drying oven and dry it at 60℃ for 3h to obtain etched diamond. Step 3: Mix 20g of etching diamond, 8g of titanium powder, 22g of tungsten powder, and 45g of sodium chloride and potassium chloride in an equimolar ratio to form a molten salt. Place the mixture in a tube furnace and perform salt bath coating for 2 hours at 1100℃ and argon flow rate of 0.2L / min. After cooling in the furnace, pour the mixture into deionized water and soak for 15 hours. Then centrifuge the mixture and wash the precipitate three times with distilled water. Finally, place the mixture in a vacuum drying oven and dry it at 100℃ for 3 hours to obtain coated diamond. Step 4: Add 20g of diamond-coated material, 30g of copper powder with an average particle size of 5μm and 90mL of anhydrous ethanol to a ball mill and ball mill for 2 hours at a ball-to-material ratio of 7 and a ball milling rate of 400r / min to obtain the ball-milled mixture. Step 5: Place the ball-milled mixture in a vacuum drying oven and dry it at 60°C for 10 hours. Then, add it to a mold, vacuum it, and sinter it at 200MPa and 1200°C for 80 minutes. After that, cool it with the furnace to obtain diamond composite copper high thermal conductivity material.

[0031] Comparative Example 4: This comparative example illustrates the preparation process of a diamond-copper composite high thermal conductivity material, including the following steps: Step 1: Add 20g of diamond with an average particle size of 100μm, 30g of copper powder with an average particle size of 5μm, 2.5g of triethanolamine, and sodium hexametaphosphate in a mass ratio of 3:1 to a ball milling aid, along with 90mL of anhydrous ethanol, to a ball mill. Ball mill for 2 hours at a ball-to-material ratio of 7 and a ball milling rate of 400r / min to obtain the ball milled mixture. Step 2: Place the ball-milled mixture in a vacuum drying oven and dry it at 60°C for 10 hours. Then, add it to a mold, vacuum it, and sinter it at 200MPa and 1200°C for 80 minutes. After that, cool it with the furnace to obtain diamond composite copper high thermal conductivity material.

[0032] The diamond-copper composite high thermal conductivity materials of Examples 1-3 and Comparative Examples 1-4 were subjected to performance tests, and the test results are as follows: Figure 1 As shown, see reference Figure 1 Based on the data, a comparison between Examples 1-3 and Comparative Examples 1-4 shows that the diamond composite copper high thermal conductivity material of this application has high thermal conductivity, indicating that it has excellent thermal conductivity.

[0033] In the description of this specification, references to terms such as "an embodiment," "example," "specific example," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0034] The above description is merely an example and illustration of the present invention. Those skilled in the art can make various modifications or additions to the specific embodiments described or use similar methods to replace them, as long as they do not deviate from the invention or exceed the scope defined in this application, they should all fall within the protection scope of the present invention.

Claims

1. A preparation process for a diamond-copper composite high thermal conductivity material, characterized in that, Includes the following steps: Step 1: Disperse diamond and sodium hydroxide solution by ultrasonication, then stir and react. After the reaction is complete, cool the reaction product, then centrifuge, wash and dry the precipitate to obtain pretreated diamond. Step 2: The pretreated diamond and concentrated nitric acid are stirred and reacted. After the reaction is completed, the reaction product is cooled, then vacuum filtered, and the filter cake is washed and dried to obtain the etched diamond. Step 3: Mix the etching diamond, titanium powder, tungsten powder and molten salt evenly and then perform salt bath coating. After that, pour it into deionized water for immersion, centrifuge, wash and dry the precipitate to obtain coated diamond. Step 4: Ball mill the coated diamond, copper powder, ball milling aid, and anhydrous ethanol to obtain a ball milling mixture; Step 5: Dry the ball-milled mixture and then sinter it to obtain diamond composite copper high thermal conductivity material.

2. The preparation process of a diamond-copper composite high thermal conductivity material according to claim 1, characterized in that, The ratio of diamond to sodium hydroxide solution in step one is 5g:30-40mL.

3. The preparation process of a diamond-copper composite high thermal conductivity material according to claim 1, characterized in that, The diamond in step one has an average particle size of 100 μm; the sodium hydroxide solution has a mass fraction of 10-15%.

4. The preparation process of a diamond-copper composite high thermal conductivity material according to claim 1, characterized in that, In step two, the ratio of pretreated diamond to concentrated nitric acid is 5g:50-60mL.

5. The preparation process of a diamond-copper composite high thermal conductivity material according to claim 1, characterized in that, The concentrated nitric acid in step two has a mass fraction of 68%.

6. The preparation process of a diamond-copper composite high thermal conductivity material according to claim 1, characterized in that, The ratio of etching diamond, titanium powder, tungsten powder and molten salt in step three is 20g: 6-8g: 18-22g: 40-45g.

7. The preparation process of a diamond-copper composite high thermal conductivity material according to claim 1, characterized in that, The molten salt mentioned in step three is a mixture of sodium chloride and potassium chloride in an equimolar ratio.

8. The preparation process of a diamond composite copper high thermal conductivity material according to claim 1, characterized in that, In step four, the ratio of the amount of diamond plating, copper powder, ball milling aid, and anhydrous ethanol used is 10-20g:30g:0.5-2.5g:80-90mL.

9. The preparation process of a diamond-copper composite high thermal conductivity material according to claim 1, characterized in that, The average particle size of the copper powder in step four is 5 μm; the ball milling aid is a mixture of triethanolamine and sodium hexametaphosphate in a mass ratio of 1-3:

1.

10. A diamond-copper composite high thermal conductivity material, characterized in that, It is prepared using the preparation process of diamond composite copper high thermal conductivity material as described in any one of claims 1-9.

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