Semiconductor thin film processing apparatus and semiconductor thin film processing method

Abstract

This application provides a semiconductor thin film processing apparatus and a semiconductor thin film processing method. The semiconductor thin film processing apparatus includes a chamber base, a cover, and a gas distribution assembly. The chamber base has a top opening and multiple extraction ports. The cover is detachably disposed at the top opening and forms a reaction chamber with the chamber base. The cover has a mounting groove. The gas distribution assembly is mounted in the mounting groove and includes a separator. The separator includes a central portion and four branches. The four branches are distributed around the central portion, and the projections of the four branches onto the chamber base divide the reaction chamber into four reaction regions. Each reaction region corresponds to at least one extraction port. This application improves the thin film growth rate by dividing the reaction chamber into four reaction regions by the four branches distributed around the central portion and their projections onto the chamber base. The at least one extraction port for each reaction region ensures effective gas extraction.

Description

Technical Field

[0001] This application belongs to the field of semiconductor processing technology, specifically, it relates to a semiconductor thin film processing apparatus and a semiconductor thin film processing method. Background Technology

[0002] In the semiconductor manufacturing industry, semiconductor thin film deposition is a critical process. Specifically, in semiconductor thin film processing equipment, substrates such as wafers are transferred to the reaction chamber through a transfer port, where thin film deposition is then performed.

[0003] In related technologies, on the one hand, the slow cycle time of thin film deposition limits the growth rate of thin films, increasing the time required to complete the deposition of a thin film of a certain thickness, thus restricting production efficiency and making it difficult to meet the needs of the rapidly developing semiconductor industry. On the other hand, due to the poor evacuation effect of the evacuation ring, impurities such as residual gas molecules in the reaction chamber cannot be quickly discharged, affecting the purity and uniformity of the thin film, and thus reducing the quality of thin film deposition.

[0004] Therefore, developing a technology that can improve thin film growth rate, thin film deposition efficiency, and gas extraction effect has become an important problem that urgently needs to be solved in the semiconductor manufacturing field. Summary of the Invention

[0005] One objective of this application is to provide a new technical solution for semiconductor thin film processing equipment and semiconductor thin film processing method.

[0006] According to a first aspect of the embodiments of this application, a semiconductor thin film processing apparatus is provided, comprising: A chamber base having a top opening and multiple air extraction ports; A cover body, which is detachably disposed at the top opening and forms a reaction chamber between the cover body and the chamber base, and the cover body is provided with a mounting groove; A gas distribution assembly is installed in the mounting groove. The gas distribution assembly includes a separator, which includes a central portion and four branch portions. The four branch portions are distributed around the central portion, and the projection portions of the four branch portions on the chamber base divide the reaction chamber into four reaction areas. Each reaction area is provided with at least one extraction port.

[0007] Optionally, the four branches include a first branch, a second branch, a third branch, and a fourth branch, and the plurality of air extraction ports include a first air extraction hole, a second air extraction hole, a third air extraction hole, and a fourth air extraction hole. The first branch, the second branch, the third branch, and the fourth branch are equally spaced around the central part, and sequentially divide the reaction chamber into a first reaction region, a second reaction region, a third reaction region, and a fourth reaction region. The first air extraction port is set in the first reaction area, the second air extraction port is set in the second reaction area, the third air extraction port is set in the third reaction area, and the fourth air extraction port is set in the fourth reaction area.

[0008] Optionally, the gas distribution assembly includes a first gas distribution element, a second gas distribution element, a third gas distribution element, and a fourth gas distribution element. The first gas distribution element is disposed in a portion of the mounting groove and opposite to the first reaction region. The second gas distribution element is disposed in a portion of the mounting groove and opposite to the second reaction region. The third gas distribution element is disposed in a portion of the mounting groove and opposite to the third reaction region. The fourth gas distribution element is disposed in a portion of the mounting groove and opposite to the fourth reaction region. The first reactant gas distributed by the first gas distribution component reacts with the first metal source gas distributed by the second gas distribution component, and the second reactant gas distributed by the third gas distribution component reacts with the second metal source gas distributed by the fourth gas distribution component.

[0009] Optionally, in the radial direction of the reaction chamber, The first air extraction port is opposite to the first air distribution component; and / or, The second air extraction port is opposite to the second air distribution component; and / or, The third air extraction port is opposite to the third air distribution component; and / or, The fourth air extraction port is opposite to the fourth air distribution component.

[0010] Optionally, the first central angle corresponding to the first reaction region is 60°-150°, the second central angle corresponding to the second reaction region is 60°-150°, the third central angle corresponding to the third reaction region is 60°-150°, and the fourth central angle corresponding to the fourth reaction region is 60°-150°.

[0011] Optionally, the first central angle, the second central angle, the third central angle, and the fourth central angle are equal.

[0012] Optionally, the central portion and the four branch portions are integrally formed.

[0013] Optionally, the mounting groove includes a first mounting groove and four second mounting grooves. The first mounting groove is located in the middle of the cover body on the side near the chamber base, and the four second mounting grooves penetrate the cover body and are equally spaced around the first mounting groove. The central portion is disposed in the first mounting slot, and the four branch portions are respectively disposed in the four second mounting slots.

[0014] Optionally, the central portion has a central area and four arc-shaped edge areas. The central area is provided with a plurality of first air holes, and the four arc-shaped edge areas surround the central area and are each provided with a plurality of second air holes.

[0015] Optionally, a tapered groove is formed between adjacent arcuate edge regions; The branch includes a positioning section and an extension section arranged in steps. The air inlet of the branch is located in the positioning section, and the air outlet of the branch is located in the extension section. A conical protrusion is formed at one end of the extension section near the center, and the conical protrusion is fitted into the conical groove.

[0016] Optionally, the air outlet of the branch has multiple rows of third air holes, and the multiple second air holes on the arc-shaped edge area form at least one arc-shaped air strip, with each row of the third air holes coinciding with the extension direction of one of the arc-shaped air strips.

[0017] Optionally, a flow guide ring is provided inside the chamber base, and the plurality of air extraction ports are connected to the reaction chamber through the flow guide ring; The guide ring is provided with multiple exhaust grooves, and the density of the exhaust grooves gradually increases from the direction near the air intake to the direction away from the air intake.

[0018] Optionally, the semiconductor thin film processing apparatus further includes a support unit, which is rotatably disposed in the reaction chamber and used to support the substrate; The side of the chamber base has a transfer port, and both the second reaction region and the fourth reaction region avoid the transfer port.

[0019] Optionally, the air inlet of the air distribution assembly includes a central air inlet located on the central portion and a branch air inlet located on the branch portion, and the air outlet of the air distribution assembly includes a central air outlet located on the central portion and a branch air outlet located on the branch portion, wherein the central air outlet is connected to the central air inlet and the branch air outlet is connected to the branch air inlet. The central air intake and the branch air intakes are independent.

[0020] According to a first aspect of the present application, a semiconductor thin film processing method is provided, applied to the semiconductor thin film processing apparatus described in the first aspect. The four reaction regions include a first reaction region, a second reaction region, a third reaction region, and a fourth reaction region arranged sequentially at intervals. The reaction chamber is used to accommodate multiple substrates. The semiconductor thin film processing method includes: The plurality of substrates are rotated so that they sequentially pass through the first reaction region, the second reaction region, the third reaction region, and the fourth reaction region; Specifically, the first reactant gas in the first reaction region reacts with the first metal source gas in the second reaction region, and the second reactant gas in the third reaction region reacts with the second metal source gas in the fourth reaction region.

[0021] One technical advantage of this application is: This application provides a semiconductor thin film processing apparatus, which includes a chamber base, a cover, and a gas distribution assembly. The chamber base has a top opening and multiple extraction ports. The cover is detachably disposed at the top opening and forms a reaction chamber with the chamber base, and has a mounting groove. The gas distribution assembly is mounted in the mounting groove and includes a separator. The separator includes a central portion and four branches. The four branches are distributed around the central portion, and their projections on the chamber base divide the reaction chamber into four reaction regions. Each reaction region corresponds to at least one extraction port. This application improves the thin film growth rate by dividing the reaction chamber into four reaction regions by the four branches distributed around the central portion and their projections on the chamber base. The presence of at least one extraction port for each reaction region ensures both thin film deposition efficiency and effective gas extraction.

[0022] Other features and advantages of this application will become clear from the following detailed description of exemplary embodiments with reference to the accompanying drawings. Attached Figure Description

[0023] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments of the present application and, together with their description, serve to explain the principles of the present application.

[0024] Figure 1 An exploded view of a semiconductor thin film processing apparatus provided in one embodiment of this application; Figure 2 A schematic diagram of the top fitting of the cover and gas distribution assembly of a semiconductor thin film processing apparatus according to one embodiment of this application. Figure 1 ; Figure 3 A schematic diagram of the bottom fit between the cover and the gas distribution assembly of a semiconductor thin film processing apparatus according to an embodiment of this application; Figure 4 A schematic diagram of the top fitting of the cover and gas distribution assembly of a semiconductor thin film processing apparatus according to one embodiment of this application. Figure 2 ; Figure 5A schematic diagram of a separator in a semiconductor thin film processing apparatus provided in one embodiment of this application; Figure 6 This application provides a schematic diagram of the interior of a chamber base for a semiconductor thin film processing apparatus according to one embodiment. Figure 7 A schematic diagram of the bottom of a chamber base for a semiconductor thin film processing apparatus provided in one embodiment of this application; Figure 8 This is a schematic diagram of the interior of the chamber base of another semiconductor thin film processing apparatus provided in one embodiment of this application; Figure 9 A schematic diagram of the top fitting of the cover and gas distribution assembly of another semiconductor thin film processing apparatus provided in one embodiment of this application. Figure 1 ; Figure 10 A schematic diagram showing the bottom fit between the cover and the gas distribution assembly of another semiconductor thin film processing apparatus provided in one embodiment of this application; Figure 11 for Figure 10 Enlarged view of point A in the middle; Figure 12 A schematic diagram of a separator for another semiconductor thin film processing apparatus provided in one embodiment of this application; Figure 13 A schematic diagram of the central portion of another semiconductor thin film processing apparatus provided in one embodiment of this application; Figure 14 A perspective view of a branch of another semiconductor thin film processing apparatus provided in one embodiment of this application; Figure 15 A bottom view of a branch of another semiconductor thin film processing apparatus provided in one embodiment of this application; Figure 16 This is a schematic diagram showing the top fit between the cover and the gas distribution assembly of another semiconductor thin film processing apparatus provided in one embodiment of this application.

[0025] in: 1. Chamber base; 11. Top opening; 12. Plate transfer port; 13. Guide ring; 131. Exhaust groove; 14. Air extraction port; 141. First air extraction hole; 142. Second air extraction hole; 143. Third air extraction hole; 144. Fourth air extraction hole; 100. Reaction zone; 101. First reaction zone; 102. Second reaction zone; 103. Third reaction zone; 104. Fourth reaction zone; 105. Plate transfer zone; 2. Cover; 21. Mounting slot; 211. First mounting slot; 212. Second mounting slot; 3. Air distribution assembly; 31. Separator; 311. Center portion; 3111. Central area; 31111. First air inlet; 3112. Arc-shaped edge area; 31121. Second air inlet; 3113. Conical groove; 312. Branch portion; 3121. First branch portion; 3122. Second branch portion; 3123. Third branch portion; 3124. Fourth branch portion; 3125. Third air inlet; 313. Positioning section; 314. Extension section; 3141. Conical protrusion; 32. First air distribution component; 33. Second air distribution component; 34. Third air distribution component; 35. Fourth air distribution component; 4. Load-bearing part. Detailed Implementation

[0026] Various exemplary embodiments of the present application will now be described in detail with reference to the accompanying drawings. It should be noted that, unless otherwise specifically stated, the relative arrangement, numerical expressions, and values ​​of the components and steps set forth in these embodiments do not limit the scope of the present application.

[0027] The embodiments of this application will now be described in detail, examples of which are illustrated in the accompanying drawings. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0028] The terms "first" and "second" in the specification and claims of this application may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise stated, "multiple" means two or more. Furthermore, "and / or" in the specification and claims indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0029] In the description of this application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0030] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0031] It should be noted that similar labels and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be discussed further in subsequent figures.

[0032] In related technologies, thin film deposition equipment suffers from several drawbacks. Firstly, the slow deposition cycle limits the rate of thin film growth, increasing the time required to deposit a film of a certain thickness, thus restricting production efficiency and failing to meet the demands of the rapidly developing semiconductor industry. Secondly, poor evacuation performance of the evacuation ring in the thin film deposition equipment prevents the rapid removal of residual gas molecules and other impurities from the reaction chamber, affecting the purity and uniformity of the film and consequently reducing the quality of the deposited film.

[0033] This application provides a semiconductor thin film processing apparatus, which can be a spatial ALD (ALD) apparatus or a semiconductor etching apparatus. The apparatus has four branches arranged around the center, and the projection of the four branches on the chamber base divides the reaction chamber into four reaction regions. Each reaction region is provided with at least one exhaust port, which can improve the thin film growth rate and ensure the thin film deposition efficiency and exhaust effect.

[0034] Reference Figure 1 , Figure 2 and Figure 7 This application provides a semiconductor thin film processing apparatus, which includes: The chamber base 1 has a top opening 11 and multiple air extraction ports 14. The cover 2 is detachably disposed at the top opening 11 and forms a reaction chamber between it and the chamber base 1. The cover 2 is provided with an installation groove 21. Gas distribution assembly 3 is installed in mounting groove 21. Gas distribution assembly 3 includes a separator 31. The separator 31 includes a central part 311 and four branches 312. The four branches 312 are distributed around the central part 311. The projection of the four branches 312 on the chamber base 1 divides the reaction chamber into four reaction areas 100. Each reaction area 100 is provided with at least one exhaust port 14.

[0035] In the above embodiments, the top opening 11 of the chamber base 1 provides an installation position for the cover 2. The chamber base 1 and the cover 2 cooperate to form a reaction chamber, providing a closed space for the semiconductor thin film deposition reaction; see also Figure 1 and Figure 2 The wafer transfer port 12 is the channel for substrates such as wafers to enter and exit the reaction chamber. In other words, the wafer transfer port 12 is used to transfer the substrates in the process flow, ensuring that the substrates can smoothly enter the reaction chamber for thin film deposition, and to facilitate the transfer of the substrates out of the reaction chamber after the thin film deposition on the substrate surface is completed. Figure 7 A schematic diagram of the bottom of chamber base 1, see [link / reference]. Figure 7 The multiple extraction ports 14 increase the extraction channels and area, which can more effectively extract the gas molecules and impurities after the reaction in the reaction chamber, thereby quickly expelling the residual gas in the reaction chamber, reducing the impact of impurities on film deposition, and thus improving the purity and uniformity of the film.

[0036] See Figure 1 and Figure 2 The cover 2 is detachably disposed at the top opening 11. When the cover 2 is assembled to the top opening 11 of the chamber base 1, the chamber base 1 and the cover 2 cooperate to form a reaction chamber, so that the substrate can be deposited in the reaction chamber and the environment of the thin film deposition reaction can be stabilized. When the cover 2 is removed from the top opening 11 of the chamber base 1, it is convenient to maintain, clean and replace the parts inside the reaction chamber. The mounting groove 21 may include a cross-shaped groove and multiple strip grooves. The mounting groove 21 provides space for the installation of the gas distribution assembly 3, ensuring that the gas distribution assembly 3 can be accurately installed and stably introduced into the reaction chamber.

[0037] In the above embodiments, the top surface of the gas distribution component 3 may be provided with one or more air inlets forming an air inlet end. The air inlet end of the gas distribution component 3 is located outside the reaction chamber, so as to connect to an external gas source through the air inlet end of the gas distribution component 3 to obtain the gas required for purging and deposition reaction. The bottom surface of the gas distribution component 3 may be provided with one or more air outlets forming an air outlet end. The air outlet end of the gas distribution component 3 is connected to the reaction chamber, which can accurately introduce the gas provided by the external gas source into the reaction chamber, provide gas raw materials for the thin film deposition reaction, and ensure that the thin film deposition reaction can proceed normally.

[0038] In the above embodiment, the projection of the branch 312 onto the chamber base 1 can be the connection area between the branch 312 and its vertical projection onto the chamber base 1. See also Figure 1 and Figure 2The separator 31 has a separator gas introduced into its inlet. Nitrogen or argon gas can enter the reaction chamber through the outlet of the separator 31 in the form of a gas curtain, thereby separating the reaction chamber into fan-shaped reaction areas. The central portion 311 of the separator 31 is opposite to the center of the chamber base 1. The reaction area is used to converge the reaction gas and the metal source gas, facilitating the reaction of the reaction gas with the metal source material on the substrate during substrate rotation, thus improving the reaction efficiency of thin film deposition.

[0039] See Figure 2 and Figure 3 The structure of the central part 311 and the four branch parts 312, in combination, can divide the reaction chamber into four relatively independent reaction regions 100, making the gas environment and reaction conditions in each reaction region 100 more uniform and stable, reducing the interference of gas flow in different reaction regions, avoiding mutual influence between different reaction regions, and ensuring the uniformity of thin film deposition. Moreover, the four relatively independent reaction regions can include a first reaction gas region, a first metal source gas region, a second reaction gas region, and a second metal source gas region. The first reaction gas in the first reaction gas region reacts with the first metal source deposited on the substrate in the first metal source gas region, and the second reaction gas in the second reaction gas region reacts with the second metal source deposited on the substrate in the second metal source gas region, which improves the cycle time of thin film growth and enhances the efficiency of thin film deposition.

[0040] See Figure 4 Each of the four reaction zones 100 is provided with at least one exhaust port 14, meaning that each reaction zone 100 has one or more exhaust ports 14 for exhausting gas. This enables independent exhausting of each reaction zone 100, more effectively removing gas molecules and other impurities from each reaction zone 100, improving exhaust efficiency, and ensuring the film deposition quality in each reaction zone.

[0041] In some embodiments, see Figures 2 to 4 The four branches 312 include a first branch 3121, a second branch 3122, a third branch 3123 and a fourth branch 3124, and the multiple air extraction ports 14 include a first air extraction hole 141, a second air extraction hole 142, a third air extraction hole 143 and a fourth air extraction hole 144. The first branch 3121, the second branch 3122, the third branch 3123 and the fourth branch 3124 are equally spaced around the central part 311, and sequentially divide the reaction chamber into the first reaction region 101, the second reaction region 102, the third reaction region 103 and the fourth reaction region 104. The first extraction port 141 is set in the first reaction area 101, the second extraction port 142 is set in the second reaction area 102, the third extraction port 143 is set in the third reaction area 103, and the fourth extraction port 144 is set in the fourth reaction area 104.

[0042] In the above embodiments, the equally spaced first branch 3121, second branch 3122, third branch 3123, and fourth branch 3124 can uniformly divide the reaction chamber into four 90° fan-shaped regions. These four 90° fan-shaped regions correspond to a first reaction region 101, a second reaction region 102, a third reaction region 103, and a fourth reaction region 104 of equal volume. This helps to form a stable and uniform gas flow field within the reaction chamber, thereby providing a stable reaction environment for thin film deposition on substrates such as wafers in each reaction region. This improves the uniformity of thin film deposition and reduces film quality fluctuations caused by regional differences. Furthermore, the relatively independent first reaction region 101, second reaction region 102, third reaction region 103, and fourth reaction region 104 can reduce mutual interference between thin film deposition processes on different wafers, ensuring the stability of thin film deposition on each wafer.

[0043] During the thin film deposition process, each reaction region 100 generates different gaseous byproducts and residual gases. Evacuation ports are provided for each reaction region 100. For example, the first evacuation port 141 evacuates gas from the first reaction region 101, the second evacuation port 142 evacuates gas from the second reaction region 102, the third evacuation port 143 evacuates gas from the third reaction region 103, and the fourth evacuation port 144 evacuates gas from the fourth reaction region 104. (See [link to relevant documentation]). Figure 4 and Figure 7 The above embodiments can extract impurity gases in each reaction area in a timely and effective manner, avoid the diffusion and accumulation of impurity gases between different reaction areas, and ensure the normal progress of the thin film deposition reaction.

[0044] In some embodiments, see Figure 1 The gas distribution assembly 3 includes a first gas distribution component 32, a second gas distribution component 33, a third gas distribution component 34, and a fourth gas distribution component 35. The first gas distribution component 32 is disposed in a portion of the mounting groove 21 and is opposite to the first reaction area. The second gas distribution component 33 is disposed in a portion of the mounting groove 21 and is opposite to the second reaction area. The third gas distribution component 34 is disposed in a portion of the mounting groove 21 and is opposite to the third reaction area. The fourth gas distribution component 35 is disposed in a portion of the mounting groove 21 and is opposite to the fourth reaction area. The first reaction gas distributed by the first gas distribution component 32 reacts with the first metal source gas distributed by the second gas distribution component 33, and the second reaction gas distributed by the third gas distribution component 34 reacts with the second metal source gas distributed by the fourth gas distribution component 35.

[0045] In the above embodiments, the reaction chamber is divided into a first reaction region 101, a second reaction region 102, a third reaction region 103, and a fourth reaction region 104. The first gas distribution component 32 and the first reaction region 101 are aligned along the axial direction of the reaction chamber (e.g., ...). Figure 1 As shown in the diagram (in the W direction), the projection of the first gas distribution component 32 onto the chamber base 1 is positioned within the first reaction region 101. This ensures that the gas distributed by the first gas distribution component 32 can directly and accurately enter the first reaction region 101, reducing gas diffusion and loss during transmission and improving gas utilization efficiency. Furthermore, the gas distributed by the first gas distribution component 32 can be rapidly and uniformly distributed within the first reaction region 101, providing a stable gas environment for the thin film deposition reaction within the first reaction region 101, which is beneficial for improving the quality and uniformity of thin film deposition.

[0046] Similarly, the second gas distribution component 33 is vertically aligned with the second reaction region 102 along the axial direction of the reaction chamber. That is, the projection of the second gas distribution component 33 onto the chamber base 1 lies within the second reaction region 102. This allows the gas distributed by the second gas distribution component 33 to directly and accurately enter the second reaction region 102, providing a stable gas environment for the thin film deposition reaction within the second reaction region 102. The third gas distribution component 34 is vertically aligned with the third reaction region 103 along the axial direction of the reaction chamber. That is, the projection of the third gas distribution component 34 onto the chamber base 1 lies within the third reaction region 103. This allows the gas distributed by the third gas distribution component 34 to directly and accurately enter the third reaction region 103, providing a stable gas environment for the thin film deposition reaction within the third reaction region 103. The fourth gas distribution component 35 and the fourth reaction region 104 are vertically opposite each other along the axial direction of the reaction chamber. That is, the projection of the fourth gas distribution component 35 on the chamber base 1 is located within the fourth reaction region 104, so that the gas distributed by the fourth gas distribution component 35 can directly and accurately enter the fourth reaction region 104, providing a stable gas environment for the thin film deposition reaction in the fourth reaction region 104 and ensuring the quality of the thin film in this region.

[0047] In the above embodiments, the first reactant gas and the first metal source gas react under suitable reaction conditions to deposit thin film material on the substrate. This embodiment of the application, by independently controlling the gas distribution of the first gas distribution component 32 and the second gas distribution component 33, can precisely adjust the ratio and flow rate of the first reactant gas and the first metal source gas, thereby controlling the composition and thickness of the thin film and improving its quality and consistency. Similarly, the gases distributed by the third gas distribution component 34 and the fourth gas distribution component 35 react with each other, also enabling thin film deposition on the substrate. This partitioned setup for two types of thin film deposition allows the semiconductor thin film processing equipment to perform deposition operations of two similar thin films or different types of composite thin films simultaneously. In other words, two reaction cycles can be achieved with one rotation of the substrate, improving the production efficiency and versatility of the semiconductor thin film processing equipment.

[0048] In some embodiments, see Figure 4 In the radial direction of the reaction chamber, The first air extraction port 141 is opposite to the first air distribution component 32; and / or, The second air extraction port 142 is opposite to the second air distribution component 33; and / or, The third air extraction port 143 is opposite to the third air distribution component 34; and / or, The fourth air extraction port 144 is opposite to the fourth air distribution component 35.

[0049] In the above embodiments, the reaction chamber can be circular to facilitate the rotation of the substrate within it. The first extraction port 141 is positioned radially opposite to the first gas distribution component 32 within the reaction chamber. This guides the gas distributed by the first gas distribution component 32 into the first reaction region to flow promptly to the first extraction port 141, resulting in smoother gas flow within the reaction region and reducing gas movement between adjacent reaction regions. The first extraction port 141 and the first gas distribution component 32 can be perfectly aligned, meaning the center of the first extraction port 141 coincides with the centerline of the first gas distribution component 32 radially within the reaction chamber. Alternatively, they can be nearly aligned, for example, the center of the first extraction port 141 deviating from the centerline of the first gas distribution component 32 by an angle within the range of 0-10°. Both approaches ensure uniform deposition of the reactive gas on the substrate.

[0050] Similarly, see Figure 4 In the entire semiconductor thin film processing equipment, the second vent 142 is opposite to the second gas distribution component 33; the third vent 143 is opposite to the third gas distribution component 34; and the fourth vent 144 is opposite to the fourth gas distribution component 35. The four reaction regions cooperate with each other to complete the thin film deposition, ensuring the coordination of gas distribution and venting in each reaction region, and improving the quality of the thin film deposited on the substrate.

[0051] In some embodiments, the first central angle corresponding to the first reaction region 101 is 60°-150°, the second central angle corresponding to the second reaction region 102 is 60°-150°, the third central angle corresponding to the third reaction region 103 is 60°-150°, and the fourth central angle corresponding to the fourth reaction region 104 is 60°-150°.

[0052] In the above embodiments, the reaction chamber is divided into a fan-shaped first reaction region 101, a second reaction region 102, a third reaction region 103, and a fourth reaction region 104 by the separator 31. In this embodiment, the first central angle corresponding to the fan-shaped first reaction region 101 is set in the range of 60°-150°. For example, the first central angle corresponding to the first reaction region 101 is set to 75°, 90°, 120°, or 135°, which can match the reactivity of the reaction gas in the first reaction region. The reaction gas distributed by the first gas distribution component 32 into the first reaction region can fully react in the concentrated reaction space, while facilitating the timely extraction of the waste gas generated by the reaction by the first exhaust port 141, thus ensuring the stability of the gas environment in the reaction region.

[0053] Specifically, the size of the first reaction region 101 can be flexibly adjusted according to the type, flow rate, and reaction time of the reacting gas to meet the deposition requirements of different thin film materials. For example, for some deposition processes with relatively low activity or requiring a longer reaction time or a larger gas flow rate, the first central angle can be increased, thereby expanding the space of the first reaction region 101; while for some deposition processes with relatively high activity or requiring a shorter reaction time, the first central angle can be decreased, thereby reducing the space of the first reaction region 101.

[0054] Similarly, the second central angle corresponding to the second reaction region 102, the third central angle corresponding to the third reaction region 103, and the fourth central angle corresponding to the fourth reaction region 104 can be 75°, 90°, 120°, or 135°. The four reaction regions work together in the reaction chamber, ensuring the stability of the reaction conditions in each reaction region, which helps to improve the quality stability of the film deposited in the reaction region.

[0055] In some embodiments, the first central angle, the second central angle, the third central angle, and the fourth central angle are equal.

[0056] In the above embodiments, when the central angles of the first reaction region 101, the second reaction region 102, the third reaction region 103, and the fourth reaction region 104 are all 90°, the four reaction regions are symmetrically distributed radially in the reaction chamber, which is beneficial for the uniform distribution of heat and gas within the reaction chamber. During thin film deposition, the reaction often needs to be carried out at a set temperature. A symmetrical layout of the reaction regions allows for more uniform heat transfer within the reaction chamber, avoiding localized overheating or undercooling, and providing a stable temperature environment for thin film deposition.

[0057] Furthermore, the four equal 90° central angle reaction zones ensure that the first gas distribution element 32, the second gas distribution element 33, the third gas distribution element 34, and the fourth gas distribution element 35 have the same reaction space when distributing gas. After entering each reaction zone, the gas can contact the substrate surface with a similar flow pattern, reducing airflow disturbance caused by differences in the shape of the reaction zones. This allows the reactive gas to cover the substrate surface more uniformly, improving the uniformity of thin film deposition.

[0058] In some embodiments, see Figures 1 to 5 The central part 311 and the four branch parts 312 are integrally formed.

[0059] In the above embodiments, the central portion 311 and the four branch portions 312 are integrally die-cast or cast, enabling the separator 31 to better withstand stress. For example, in a thin film deposition apparatus, there may be high temperature variations within the reaction chamber. The integrally formed central portion 311 and branch portions 312 can ensure the structural integrity and strength of the entire separator 31, thereby improving the reliability and stability of the apparatus.

[0060] In addition, the integral molding of the central part 311 and the four branch parts 312 ensures the smoothness and continuity of the gas distribution process, and ensures that the blowing of the central part 311 and the blowing of the branch parts 312 can form a continuous air curtain, thereby improving the isolation between adjacent reaction areas.

[0061] In some embodiments, see Figure 9 , Figure 10 and Figure 12 The mounting groove 21 includes a first mounting groove 211 and four second mounting grooves 212. The first mounting groove 211 is located in the middle of the cover 2 on the side near the chamber base 1. The four second mounting grooves 212 penetrate the cover 2 and are equally spaced around the first mounting groove 211. The central part 311 is disposed in the first mounting slot 211, and the four branch parts 312 are respectively disposed in the four second mounting slots 212.

[0062] In the above embodiment, the first mounting groove 211 is located in the middle of the cover 2 on the side near the chamber base 1. This avoids hollowing out the middle of the cover 2, ensuring the structural strength of the cover 2. Furthermore, it allows the central portion 311 installed in the first mounting groove 211 to be positioned at the center of the device, facilitating central isolation between multiple reaction zones. The central portion 311 can receive air through the central air inlet on the side of the cover 2 away from the chamber base 1, ensuring the stability of the central purging gas flow rate.

[0063] See Figure 9 and Figure 10 Four second mounting slots 212 penetrate the cover 2, facilitating the connection and interaction between the branch portions 312 in the second mounting slots 212 and the external air supply components. The four second mounting slots 212 are evenly spaced around the first mounting slot 211, ensuring a symmetrical spatial distribution of the four branch portions 312. This promotes uniform purge gas distribution, allowing the central portion 311 and the four branch portions 312 to form a cross-shaped air curtain, thereby dividing the reaction chamber into four opposing reaction zones and preventing cross-contamination between adjacent reaction zones.

[0064] In some embodiments, see Figure 12 and Figure 13 The central part 311 has a central area 3111 and four arc-shaped edge areas 3112. The central area 3111 is provided with a plurality of first air holes 31111, and the four arc-shaped edge areas 3112 surround the central area 3111 and are each provided with a plurality of second air holes 31121.

[0065] In the above embodiments, the multiple first air vents 31111 can be distributed in a ring array or a square array in the central region 3111 to increase the gas ejection volume and ejection range in the central region 3111. Furthermore, by adjusting the number, size, and distribution density of the first air vents 31111, the purging speed and purging volume of the gas in the central region can be controlled, thereby achieving effective isolation of multiple reaction zones.

[0066] See Figure 13 Multiple second air vents 31121 are provided in the four arc-shaped edge regions 3112 respectively, so that the central part 311 and the four branch parts 312 cooperate to form a cross-shaped partitioned air path, further ensuring the independence of each reaction area and improving the adaptability and stability of the process.

[0067] In some embodiments, see Figures 12 to 15 A conical groove 3113 is formed between adjacent arc-shaped edge regions 3112; The branch 312 includes a positioning section 313 and an extension section 314 arranged in a stepped manner. The air inlet of the branch 312 is located in the positioning section 313, and the air outlet of the branch 312 is located in the extension section 314. A conical protrusion 3141 is formed at one end of the extension section 314 near the center 311. The conical protrusion 3141 is fitted into the conical groove 3113.

[0068] In the above embodiment, during the process of gas diffusion from the center 311 to the surrounding area, the conical groove 3113 can change the flow direction of the gas, making the gas flow more concentrated towards the branch 312, reducing the disorderly diffusion of gas between adjacent arc-shaped edge areas 3112, and improving the efficiency of the purging gas separating the reaction area.

[0069] See Figure 14 and Figure 15 The positioning section 313 and the extension section 314 are arranged in a stepped configuration, providing a clear positioning reference for the branch section 312 during installation. When the branch section 312 is installed into the corresponding mounting slot 21, the positioning section 313 can precisely mate with the corresponding stepped portion on the mounting slot 21, ensuring the accurate installation position of the branch section 312 and avoiding problems such as gas leakage and loose connections caused by installation deviations. The extension section 314 is used for the delivery and distribution of purge gas, guiding the purge gas from the inlet end to the outlet end, thereby forming an air curtain in the reaction chamber.

[0070] Additionally, see Figure 11 The fitting of the conical protrusion 3141 and the conical groove 3113 forms a zigzag-shaped mating surface, which not only makes the fit between the branch 312 and the center 311 tighter, but also increases the path length between the conical protrusion 3141 and the conical groove 3113, increasing the difficulty of cross-contamination between the reactant gas and the metal source gas, thus reducing leakage of the reactant gas and the metal source gas at the connection between the branch 312 and the center 311, and improving the utilization rate of the reactant gas.

[0071] In some embodiments, see Figure 10 and Figure 11 The air outlet of the branch 312 has multiple rows of third air holes 3125, and multiple second air holes 31121 on the arc-shaped edge region 3112 form at least one arc-shaped air strip. The extension direction of each row of third air holes 3125 coincides with that of an arc-shaped air strip.

[0072] In the above embodiments, each row of third air blowing holes 3125 can be a single elongated hole or multiple air blowing holes arranged in a row at intervals. Multiple rows of third air blowing holes 3125 are located between adjacent reaction zones, allowing the purge gas output from the third air blowing holes 3125 to form multiple rows of purge air curtains, improving the separation effect between adjacent reaction zones. Simultaneously, combining multiple second air blowing holes 31121 into an arc-shaped air blowing strip allows the purge gas output from the second air blowing holes 31121 to separate the space near the center of the reaction zone, enhancing the independence of the reaction zone and contributing to improved cleanliness of the reaction chamber and process stability.

[0073] See Figure 12 Since the third air hole 3125 in each row coincides with the extension direction of an arc-shaped air strip, the air outlet of the branch 312 and the air hole of the arc-shaped edge area 3112 can form a complete separation air path, thereby separating each reaction area separately.

[0074] In some embodiments, each row of third air holes 3125 is formed on the air outlet end of the branch portion 312 as a linear protrusion, and a plurality of second air holes 31121 are formed on the arcuate edge region 3112 as an arcuate protrusion. The linear protrusion and the arcuate protrusion are smoothly opposite each other to form a high-pressure zone at the linear protrusion and the arcuate protrusion, while a low-pressure zone is formed between adjacent linear protrusions and adjacent arcuate protrusions, thereby enhancing the separation effect of the separator 31.

[0075] In some embodiments, see Figures 6 to 8 A guide ring 13 is provided inside the chamber base 1, and multiple air extraction ports 14 are connected to the reaction chamber through the guide ring 13. The guide ring 13 is provided with multiple exhaust grooves 131, and the density of the exhaust grooves 131 gradually increases from the direction near the air intake 14 to the direction away from the air intake 14.

[0076] In the above embodiment, the guide ring 13 provides a clear suction channel for the gas in the reaction chamber, guiding the gas smoothly from the reaction chamber to multiple suction ports 14, avoiding disorderly gas flow within the reaction chamber, and improving the efficiency of gas suction. See also Figure 8 The arrangement of multiple exhaust slots 131 increases the conduction area between the exhaust port 14 and the gas in the reaction chamber, which helps to refresh the gas environment in the reaction chamber more quickly and meet the process requirements for gas exchange.

[0077] During the gas extraction process in the semiconductor thin film deposition equipment, gas flow is relatively easy near the extraction port 14, while the gas flow resistance is greater in areas farther away from the extraction port 14. The density of the exhaust channels 131 gradually increases from near the extraction port 14 to far away from it, which can balance the difference in extraction resistance and ensure sufficient extraction effect even in areas far from the extraction port 14, thereby guaranteeing the uniformity of the gas flow field and extraction throughout the reaction chamber.

[0078] Specifically, the increasing density of the exhaust grooves 131 can be achieved by either decreasing the spacing between adjacent exhaust grooves 131 or increasing the aperture of the exhaust grooves 131, both of which can achieve the effect of balancing the flow field.

[0079] In some embodiments, see Figure 1 The semiconductor thin film processing equipment also includes a support unit 4, which is rotatably disposed in the reaction chamber and used to support the substrate; The side of the chamber base 1 has a transfer port 12. The second reaction region 102 and the fourth reaction region 104 both avoid the transfer port 12. The second reaction region 102 and the fourth reaction region 104 are used to collect the same or different metal source gases.

[0080] See Figure 1 One or more substrate support areas can be provided on the support part 4. The substrate support area provides a stable placement position for the substrate in the reaction chamber. The support part 4 can rotate counterclockwise or clockwise in the reaction chamber so that each substrate support area passes through different reaction areas in sequence. This is beneficial for the substrate to alternately and fully contact the reaction gas and the metal source gas, so that the source material film is uniformly deposited on the substrate, thereby improving the quality and uniformity of film deposition.

[0081] In the above embodiment, the transfer port 12 corresponds to the fan-shaped transfer area 105 within the reaction chamber (e.g., ...). Figure 4 and Figure 16 The fan-shaped area enclosed by the dashed line (the second reaction region 102 and the fourth reaction region 104 both avoid the transfer port 12, meaning the transfer region 105 does not overlap with the second reaction region 102 and the fourth reaction region 104). Since the metal source gas is isolated within the second reaction region 102 and the fourth reaction region 104 by the separator 31, the metal source gas in the second reaction region 102 and the fourth reaction region 104 will not flow to the transfer port 12, thus preventing the deposition of viscous liquid or solid metal sources at the transfer port 12. The transfer region 105 can overlap with a portion of the first reaction region 101, or it can overlap with the entire first reaction region 101.

[0082] In some embodiments, the number of transfer ports 12 can be one or more. For example, if the number of transfer ports 12 is one, that is, one substrate is transferred to the reaction cavity each time, which can ensure the stability of substrate transfer; or, if the number of transfer ports 12 is two, three or more, that is, two, three or more substrates are transferred to the reaction cavity each time, which can ensure improved substrate transfer efficiency.

[0083] In some embodiments, the gas distribution assembly 3 has an inlet end and an outlet end, with the inlet end located outside the reaction chamber and the outlet end connected to the reaction chamber. The air inlet end of the air distribution assembly 3 includes a central air inlet end located on the central part 311 and a branch air inlet end located on the branch part 312. The air outlet end of the air distribution assembly 3 includes a central air outlet end located on the central part 311 and a branch air outlet end located on the branch part 312. The central air outlet end is connected to the central air inlet end, and the branch air outlet end is connected to the branch air inlet end. The central air intake and the branch air intakes are independent.

[0084] In the above embodiments, the central part 311 and the branch part 312 are respectively provided with an air inlet and an air outlet, so that the separating gas can enter the gas distribution component 3 from different positions. By introducing multiple air inlets, multiple separating gases or various separating gases with different properties can be introduced to ensure the effective separation of the continuously introduced reaction gas and the metal source gas, providing a suitable gas supply for different reaction areas, which helps to achieve precise control of the thin film deposition process.

[0085] The independent gas inlet at the central inlet and branch inlet provided in this embodiment allows for independent control of the gas introduced at each inlet, including control of parameters such as the type, flow rate, and pressure of the gas. Specifically, the independent control method for the gas introduced at the central inlet and branch inlet can be adjusted according to the specific requirements of the thin film deposition process. For example, suitable types and pressures of gas can be supplied to areas requiring different gas pressures, thereby better meeting the separation requirements of the reactant gas and the metal source gas, and improving the performance and quality of the thin film deposition.

[0086] This application also provides a semiconductor thin film processing method applied to the aforementioned semiconductor thin film processing equipment. This semiconductor thin film processing method can be a semiconductor thin film deposition method or a semiconductor etching method. The semiconductor thin film processing equipment includes four reaction regions: a first reaction region, a second reaction region, a third reaction region, and a fourth reaction region arranged sequentially at intervals. The reaction chamber is used to accommodate multiple substrates. The semiconductor thin film processing method includes: Rotate multiple substrates so that they sequentially pass through the first reaction region, the second reaction region, the third reaction region, and the fourth reaction region; Specifically, the first reactant gas in the first reaction region reacts with the first metal source gas in the second reaction region, and the second reactant gas in the third reaction region reacts with the second metal source gas in the fourth reaction region.

[0087] In the above embodiments, the four reaction regions arranged at intervals provide multiple independent and orderly reaction spaces for semiconductor thin film deposition, enabling the substrate to achieve two reaction cycles in one rotation, thereby improving the production efficiency of the semiconductor thin film processing equipment.

[0088] While specific embodiments of this application have been described in detail by way of examples, those skilled in the art should understand that the above examples are for illustrative purposes only and are not intended to limit the scope of this application. Those skilled in the art should understand that modifications can be made to the above embodiments without departing from the scope and spirit of this application. The scope of this application is defined by the appended claims.

Claims

1. A semiconductor thin film processing apparatus, characterized in that, include: A chamber base (1) having a top opening (11) and multiple air extraction ports (14). Cover (2), the cover (2) is detachably disposed at the top opening (11) and forms a reaction chamber with the chamber base (1), and the cover (2) is provided with an installation groove (21). Gas distribution assembly (3) is installed in the mounting groove (21). Gas distribution assembly (3) includes a separator (31). The separator (31) includes a central part (311) and four branches (312). The four branches (312) are distributed around the central part (311). The projection of the four branches (312) on the chamber base (1) divides the reaction chamber into four reaction areas (100). Each reaction area (100) is provided with at least one air extraction port (14).

2. The semiconductor thin film processing apparatus according to claim 1, characterized in that, The four branches (312) include a first branch (3121), a second branch (3122), a third branch (3123) and a fourth branch (3124), and the plurality of air extraction ports (14) include a first air extraction hole (141), a second air extraction hole (142), a third air extraction hole (143) and a fourth air extraction hole (144). The first branch (3121), the second branch (3122), the third branch (3123) and the fourth branch (3124) are equally spaced around the central part (311) and sequentially divide the reaction chamber into the first reaction region (101), the second reaction region (102), the third reaction region (103) and the fourth reaction region (104). The first air extraction port (141) is set in the first reaction area (101), the second air extraction port (142) is set in the second reaction area (102), the third air extraction port (143) is set in the third reaction area (103), and the fourth air extraction port (144) is set in the fourth reaction area (104).

3. The semiconductor thin film processing equipment according to claim 2, characterized in that, The gas distribution assembly (3) includes a first gas distribution component (32), a second gas distribution component (33), a third gas distribution component (34), and a fourth gas distribution component (35). The first gas distribution component (32) is disposed in a portion of the mounting groove (21) and is opposite to the first reaction region (101). The second gas distribution component (33) is disposed in a portion of the mounting groove (21) and is opposite to the second reaction region (102). The third gas distribution component (34) is disposed in a portion of the mounting groove (21) and is opposite to the third reaction region (103). The fourth gas distribution component (35) is disposed in a portion of the mounting groove (21) and is opposite to the fourth reaction region (104). The first reaction gas distributed by the first gas distribution component (32) reacts with the first metal source gas distributed by the second gas distribution component (33), and the second reaction gas distributed by the third gas distribution component (34) reacts with the second metal source gas distributed by the fourth gas distribution component (35).

4. The semiconductor thin film processing apparatus according to claim 3, characterized in that, In the radial direction of the reaction chamber, The first vent (141) is opposite to the first air distribution component (32); and / or, The second vent (142) is opposite to the second air distribution component (33); and / or, The third vent (143) is opposite to the third air distribution component (34); and / or, The fourth air extraction port (144) is opposite to the fourth air distribution component (35).

5. The semiconductor thin film processing apparatus according to claim 3, characterized in that, The first central angle corresponding to the first reaction region (101) is 60°-150°, the second central angle corresponding to the second reaction region (102) is 60°-150°, the third central angle corresponding to the third reaction region (103) is 60°-150°, and the fourth central angle corresponding to the fourth reaction region (104) is 60°-150°.

6. The semiconductor thin film processing apparatus according to claim 5, characterized in that, The first central angle, the second central angle, the third central angle, and the fourth central angle are equal.

7. The semiconductor thin film processing apparatus according to claim 1, characterized in that, The central part (311) and the four branches (312) are integrally formed.

8. The semiconductor thin film processing apparatus according to claim 1, characterized in that, The mounting slot (21) includes a first mounting slot (211) and four second mounting slots (212). The first mounting slot (211) is located in the middle of the cover (2) near the chamber base (1). The four second mounting slots (212) penetrate the cover (2) and are equally spaced around the first mounting slot (211). The central part (311) is disposed in the first mounting slot (211), and the four branches (312) are respectively disposed in the four second mounting slots (212).

9. The semiconductor thin film processing apparatus according to claim 8, characterized in that, The central part (311) has a central area (3111) and four arc-shaped edge areas (3112). The central area (3111) is provided with a plurality of first air holes (31111). The four arc-shaped edge areas (3112) surround the central area (3111) and are each provided with a plurality of second air holes (31121).

10. The semiconductor thin film processing apparatus according to claim 9, characterized in that, A conical groove (3113) is formed between adjacent arc-shaped edge regions (3112). The branch (312) includes a positioning section (313) and an extension section (314) arranged in a stepped manner. The air inlet of the branch (312) is located in the positioning section (313), and the air outlet of the branch (312) is located in the extension section (314). A conical protrusion (3141) is formed at one end of the extension section (314) near the center (311), and the conical protrusion (3141) is fitted into the conical groove (3113).

11. The semiconductor thin film processing apparatus according to claim 10, characterized in that, The air outlet of the branch (312) has multiple rows of third air holes (3125), and multiple second air holes (31121) on the arc-shaped edge area (3112) form at least one arc-shaped air strip. The extension direction of each row of the third air holes (3125) coincides with that of one arc-shaped air strip.

12. The semiconductor thin film processing apparatus according to claim 1, characterized in that, A flow guide ring (13) is provided inside the chamber base (1), and the plurality of air extraction ports (14) are connected to the reaction chamber through the flow guide ring (13); The guide ring (13) is provided with a plurality of exhaust grooves (131), and the density of the exhaust grooves (131) gradually increases in the direction from near the air intake (14) to away from the air intake (14).

13. The semiconductor thin film processing apparatus according to claim 3, characterized in that, The semiconductor thin film processing equipment further includes a support unit (4), which is rotatably disposed in the reaction chamber and used to support the substrate; The side of the chamber base (1) has a transfer port (12), and the second reaction region (102) and the fourth reaction region (104) both avoid the transfer port (12).

14. The semiconductor thin film processing apparatus according to claim 1, characterized in that, The air inlet of the air distribution assembly (3) includes a central air inlet located on the central portion (311) and a branch air inlet located on the branch portion (312). The air outlet of the air distribution assembly (3) includes a central air outlet located on the central portion (311) and a branch air outlet located on the branch portion (312). The central air outlet is connected to the central air inlet, and the branch air outlet is connected to the branch air inlet. The central air intake and the branch air intakes are independent.

15. A semiconductor thin film processing method, applied to the semiconductor thin film processing apparatus according to any one of claims 1-14, characterized in that, The four reaction regions include a first reaction region, a second reaction region, a third reaction region, and a fourth reaction region arranged sequentially at intervals. The reaction chamber is used to accommodate multiple substrates. The semiconductor thin film processing method includes: The plurality of substrates are rotated so that they sequentially pass through the first reaction region, the second reaction region, the third reaction region, and the fourth reaction region; Specifically, the first reactant gas in the first reaction region reacts with the first metal source gas in the second reaction region, and the second reactant gas in the third reaction region reacts with the second metal source gas in the fourth reaction region.

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