A plasma vapor deposition apparatus

Abstract

This invention discloses a plasma vapor deposition apparatus, relating to the field of glass coating technology, including a machine base; further comprising: a lifting assembly disposed on the machine base; a vacuum reaction chamber installed at the movable end of the lifting assembly; a vacuum pump for evacuating the interior of the vacuum reaction chamber; and a radio frequency assembly for providing plasma discharge energy to the process gas within the vacuum reaction chamber. This invention utilizes a baffle plate inside the distribution seat to separate the diffuser chamber from the pressure stabilizing chamber, allowing the process gas introduced by the injection pipe to first diffuse within the diffuser chamber. Through a variable cross-section structure formed by the gradually decreasing distance between the top wall of the diffuser chamber and the baffle plate along the gas flow direction, the process gas diffuses laterally within the diffuser chamber along the width direction, receiving accelerated compensation as the flow cross-sectional area physically contracts, thereby maintaining the pressure uniformity between the center and edges of the diffuser chamber along the width direction.

Description

Technical Field

[0001] This invention relates to the field of glass coating technology, and more specifically to a plasma vapor deposition apparatus. Background Technology

[0002] Plasma vapor deposition (PECVD) equipment is a core piece of equipment in semiconductor and related semiconductor manufacturing processes (such as flat panel displays and photovoltaic cells). It is mainly used to ionize the input process gas into a plasma state in a vacuum environment using a radio frequency electric field, and then chemically react on the substrate surface to deposit various dielectric or semiconductor thin films. As modern manufacturing processes evolve towards larger sizes and higher precision, the industry has put forward extremely high requirements for the uniformity and density of the film thickness, as well as the control of micro-particles in the reaction chamber.

[0003] Existing plasma vapor deposition equipment typically includes a machine platform, a vacuum reaction chamber, a support base, and a spray head. In conventional thin film deposition processes, the externally supplied process gas first enters the internal chamber of the gas distribution assembly for diffusion and pressure equalization, and then is sprayed into the vacuum reaction chamber below through the spray array at the bottom. At the same time, the radio frequency component applies high-frequency electrical energy to the gas distribution assembly, which excites a plasma discharge network between the gas distribution assembly and the grounded support base to complete the vapor deposition of the thin film. The waste gas after the reaction is discharged by the vacuum pumping system at the bottom.

[0004] However, existing equipment has significant limitations when dealing with large-size substrate processing: existing gas distribution chambers usually adopt a constant cross-section design. Especially for large-size substrates with wide spans, the internal span of the distribution chamber is greatly widened. As the physical path of the process gas diffuses from the central inlet to the surrounding edges increases, the kinetic energy loss and frictional resistance along the airflow are amplified sharply. This causes the process gas to lose kinetic energy compensation during diffusion, resulting in a very significant difference in gas pressure and concentration between the center and the edge regions above the substrate. Consequently, the film deposition thickness near the inlet is much greater than that far from the inlet, affecting the uniformity of deposition. Summary of the Invention

[0005] The purpose of this invention is to provide a plasma vapor deposition device that uses a variable cross-section gas chamber to compensate for pressure drop along the flow path and, in conjunction with a baffle plate, constructs a static pressure flow field to eliminate the extreme difference in deposition thickness, thereby improving the uniformity of the coating.

[0006] To solve the above-mentioned technical problems, the technical solution adopted by the present invention is as follows: A plasma vapor deposition apparatus includes a machine base; it further includes: a lifting assembly mounted on the machine base; a vacuum reaction chamber mounted on the movable end of the lifting assembly; a vacuum pump for evacuating the interior of the vacuum reaction chamber; a radio frequency (RF) assembly for providing plasma discharge energy to the process gas within the vacuum reaction chamber; a linear module with a mounting plate fixedly connected to its movable end, the linear module driving the mounting plate to perform reciprocating translational motion in the horizontal direction; a support base mounted on the top of the machine base, forming a sealed chamber with the vacuum reaction chamber for supporting the substrate to be processed; and a gas distribution assembly mounted on the mounting plate. It is located above the supporting base; the gas distribution assembly includes a distribution seat, the interior of which is divided into a diffuser chamber and a pressure stabilizing chamber from top to bottom by a baffle plate, the distribution seat is provided with an injection pipe communicating with the diffuser chamber, and the baffle plate is provided with several baffle holes; a spray plate is fixedly connected to the bottom of the distribution seat, the spray plate is provided with a distribution cavity, and the bottom of the spray plate is provided with several spray holes communicating with the distribution cavity; the bottom of the distribution seat is provided with a through groove communicating with the pressure stabilizing chamber and the distribution cavity; the distance between the top wall of the diffuser chamber and the baffle plate gradually decreases along the gas flow direction to form a variable cross-section structure.

[0007] By adopting the above technical solution, the diffuser chamber and the pressure stabilizing chamber are separated by the baffle plate inside the distribution seat, so that the process gas introduced by the injection pipe diffuses first in the diffuser chamber. Through the variable cross-section structure formed by the gradual reduction of the distance between the top wall of the diffuser chamber and the baffle plate along the gas flow direction, the process gas diffuses to both sides in the width direction in the diffuser chamber and is accelerated by the physical contraction of the flow cross-sectional area, thereby offsetting the kinetic energy loss of the fluid diffusion along the flow path, and thus maintaining the pressure uniformity of the center and edge of the diffuser chamber in the width direction. Specifically, the scheme utilizes several flow-blocking holes on the flow-blocking plate to allow the gas in the diffuser chamber to permeate downwards into the pressure-stabilizing chamber after physical throttling, thereby converting the high-kinetic-energy diffused airflow into a low-speed static pressure flow field; the pressure-stabilizing chamber is connected to the distribution cavity inside the spray plate through the through groove at the bottom of the distribution seat, allowing the pressure-equalized process gas to enter the distribution cavity for secondary volume expansion and buffering, and then be uniformly sprayed downwards from each spray hole at the bottom of the spray plate.

[0008] Furthermore, in the prior art, multiple different process gases lack sufficient premixing before entering the distribution chamber, and the fluids often maintain an independent laminar flow state, resulting in uneven distribution of mixed gas components, which in turn affects the uniformity of chemical composition of the final deposited film in each region.

[0009] A further improvement of the technical solution of the present invention is that: the gas distribution assembly further includes a gas mixing connector connected to the diffuser chamber; the gas mixing connector includes a main intake pipe connected to the injection pipe, and a first intake branch pipe and a second intake branch pipe coaxially connected to both sides of the main intake pipe in the horizontal direction; the first intake branch pipe and the second intake branch pipe each form a narrowing section at the intersection with the main intake pipe.

[0010] By adopting the above technical solution, the reduced diameter section set at the intersection of the first and second intake branches and the main intake pipe allows two independent process gases to be accelerated by the reduced diameter section to generate high-speed jets, and then to collide horizontally with each other at the central axis of the main intake pipe. This process utilizes fluid momentum to break up the laminar boundary at the intersection, thereby achieving deep premixing of multiple process gases before they enter the diffuser chamber.

[0011] Furthermore, when the laterally injected process fluid diffuses radially within the diffuser chamber, it is prone to wake separation and low-pressure vortices when it encounters conventional cylindrical or rectangular support components within the chamber. This results in a large accumulation and agglomeration of vapor deposition byproducts on the leeward side of the support components.

[0012] A further improvement of the technical solution of the present invention is that: the injection pipe is installed on the side wall of the distribution seat; a plurality of turbulence columns are fixedly provided on the top wall of the diffuser chamber, and each of the turbulence columns has a downwardly protruding force-bearing pin at its bottom; the baffle plate has a plurality of strip grooves on the side facing the top wall for the force-bearing pins to be embedded in; each of the force-bearing pins is respectively embedded in the corresponding strip groove, so that the turbulence column is vertically supported between the top wall and the baffle plate; the horizontal cross section of the turbulence column has a streamlined structure, and the blunt end of the turbulence column faces the inflow direction of the process gas, and the sharp end faces the outflow direction of the process gas.

[0013] By employing the above technical solution, the streamlined structure of the horizontal cross-section of the turbulence column is utilized. Specifically, the structure is a teardrop-shaped column with its blunt end facing the inflow direction of the process gas and its sharp end facing the outflow direction of the process gas. This arrangement allows the high-speed process gas injected horizontally from the side wall injection pipe to smoothly flow along the streamlined side wall of the turbulence column and gently converge behind the sharp end in the outflow direction. This prevents the reaction gas from being locally trapped in dead zones and forming solid particles, and avoids the adhesion and accumulation of by-product dust on the column surface. In addition, by embedding a force-bearing pin in the strip groove, the structure provides vertical support while releasing the lateral expansion displacement caused by heat between the top wall and the baffle plate.

[0014] When the mixed gas is transported downward in the main intake pipe, the straight flow path is short, making it difficult to complete secondary deep mixing.

[0015] A further improvement of the technical solution of the present invention is that a spiral blade is fixedly connected to the inner wall of the main intake pipe, the cross-section of the spiral blade is triangular, and the thickness of the spiral blade near the center is less than that of the edge.

[0016] By employing the above technical solution, spiral blades are installed on the inner wall of the main intake pipe, forcing the process gas after collision to spiral downwards along a spiral trajectory within the main intake pipe. This significantly extends the three-dimensional flow path and physical residence time of the mixed gas within the limited pipe length, thereby improving the component uniformity of the process gas before entering the diffuser chamber. Furthermore, the spiral blades, with a triangular cross-section and a varying thickness near the center compared to the edges, allow the spiral blades to smoothly cut through the high-speed airflow with a thinner, sharper edge in the central region of the main intake pipe, while simultaneously guiding the airflow smoothly through a thicker base near the pipe wall. This reduces the fluid's swirling resistance along the flow path and eliminates the right-angle velocity dead zone at the blade root.

[0017] In the prior art, when process gas diffuses outward in the diffuser chamber, the fluid dynamic pressure in the central region is often inevitably greater than that in the edge region. If the baffle plate adopts a uniform opening structure, it is easy to cause the mass flow rate of the gas passing through the baffle plate to show an unbalanced distribution with a large center and a small edge.

[0018] A further improvement of the technical solution of the present invention is that: the plurality of flow-blocking holes on the flow-blocking plate are arranged in a structure with gradually decreasing porosity along the center of the diffuser chamber to both sides.

[0019] By adopting the above technical solution, the flow-blocking holes are arranged in a structure with gradually decreasing porosity from the center of the diffuser chamber to both sides. This results in the flow-blocking plate exhibiting greater fluid permeation resistance in the edge region where the corresponding airflow static pressure accumulates, and smaller fluid permeation resistance in the central region where the corresponding airflow static pressure is relatively low. This forces the back pressure difference caused by the boundary stagnation effect of the fluid to be balanced on the physical cross section, thereby ensuring that the mass flow rate of the gas passing through the flow-blocking plate into the pressure-stabilizing chamber within a unit area is on the same order of magnitude, thus ensuring gas pressure uniformity.

[0020] During high-temperature plasma process operation, the gas distribution component is close to the high-temperature heat source, and is very prone to premature thermal decomposition of the internal process gas and powder deposition due to hardware overheating.

[0021] A further improvement of the technical solution of the present invention is that: a cooling channel is embedded in the distribution seat, and the cooling channel is arranged close to the inner metal wall of the diffuser chamber; the cooling channel includes a U-shaped channel loop; fins extending along the flow direction of the cooling medium are machined on the inner wall of the cooling channel; and the two ends of the cooling channel are respectively connected to the input end and the output end of an external cold source.

[0022] By employing the above technical solution, a cooling channel embedded in the distribution seat and arranged close to the inner metal wall of the diffuser chamber allows the externally input cooling medium to circulate and absorb heat in close proximity to the internal high-temperature zone, thereby reducing the overall temperature of the gas distribution chamber. By machining fins extending along the flow direction of the cooling medium on the inner wall of the cooling channel, the contact area between the coolant and the metal is increased, improving the heat exchange effect while maintaining the laminar flow smoothness of the cooling medium. This increases the convective heat transfer rate at the bottom of the channel without increasing the resistance of the fluid pumping pipeline network, thereby controlling the interface temperature of the distribution component below the critical threshold for thermal decomposition of the process gas.

[0023] In the prior art, the exhaust port of the vacuum reaction chamber is usually arranged asymmetrically due to the limited space of the machine (such as single-sided center exhaust). This results in the vacuum negative pressure and exhaust flow capacity in the area near the exhaust port being greater than that in the area far from the exhaust port. This easily leads to the formation of an asymmetrical wind flow field above the support base, causing plasma concentration imbalance and uneven deposition of the thin film.

[0024] A further improvement of the technical solution of the present invention is that: a suction frame surrounds the bearing base, the lower part of the inner side of the suction frame is fixedly connected to the bearing base, and there is a gap between the upper part of the inner side of the suction frame and the bearing base; the vacuum pump is fixedly installed inside the machine tool, and the suction pipe of the vacuum pump is connected to the central part of one side of the suction frame; a throttling orifice is provided on the suction frame; along the suction end direction away from the vacuum pump suction pipe, the diameter of the throttling orifice is arranged in a gradually increasing manner.

[0025] By employing the above technical solution, the air extraction frame surrounding the support base and the gradually increasing diameter of the throttling orifice along the direction away from the air extraction end of the vacuum pump pipe create a gradient structure. This results in the air extraction frame exhibiting greater fluid exhaust resistance in the high negative pressure region near the vacuum pump and less fluid exhaust resistance in the low negative pressure region away from the vacuum pump. This forces a balance in the exhaust conductivity at the edge of the vacuum reaction chamber in the physical circumference, thereby ensuring that the exhaust gas discharge rate in each radial region above the support base is in dynamic equilibrium and preventing airflow turbulence in the vacuum reaction chamber from affecting the uniformity of deposition.

[0026] In large-size plasma vapor deposition equipment, the inside of the spray plate is under extremely low pressure, while the outside is subjected to standard atmospheric pressure. The huge pressure difference between the inside and outside can easily force the large-span distribution cavity to produce severe inward deflection deformation, resulting in a shortening of the distance between the center of the spray plate and the supporting base, causing local electric field distortion and plasma discharge electrode distance inaccuracy.

[0027] A further improvement of the technical solution of the present invention is that: a plurality of reinforcing plates are integrally formed between the top and bottom of the inner wall of the distribution cavity.

[0028] By adopting the above technical solution, several reinforcing plates integrally formed between the top and bottom of the inner wall of the distribution chamber are used to ensure that when the spray plate is subjected to the extreme pressure difference between the external atmospheric pressure and the internal high vacuum, the top plate and the bottom plate of the distribution chamber obtain rigid vertical tensile and compressive constraints, thereby offsetting the deflection deformation of the large-sized metal components in the vertical direction, and thus maintaining the macroscopic absolute flatness of the bottom of the spray plate under the vacuum working state of the equipment.

[0029] In high-temperature plasma processes, parasitic film layers of vapor deposition byproducts inevitably form on the bottom surface of the spray plate. When the equipment undergoes alternating thermal cycling, the difference in thermal expansion coefficients between the parasitic film layer and the smooth metal substrate can easily trigger huge interfacial shear stress, causing the thick film to crack and peel off over a large area, which then falls onto the substrate surface below and forms deadly particulate contamination.

[0030] A further improvement of the technical solution of the present invention is that: the bottom surface of the spray plate away from the distribution seat is provided with a roughened anti-stripping anchoring layer, and the anti-stripping anchoring layer is a sandblasted surface.

[0031] By adopting the above technical solution, the roughened anti-stripping anchoring layer set on the bottom surface of the spray plate away from the distribution seat enables the parasitic film layer attached to this surface to generate a three-dimensional mechanical interlock at the micro level between the parasitic film layer and the rough metal substrate during process operation, thereby multiplying the interfacial adhesion of the parasitic film layer and preventing the continuously thickened deposited film layer from cracking and peeling off under thermal stress cycling.

[0032] By adopting the above technical solution, the technical effects achieved by this invention compared to the prior art are as follows: 1. This invention provides a plasma vapor deposition apparatus, which uses a baffle plate inside the distribution seat to separate the diffuser chamber and the pressure stabilizing chamber, so that the process gas introduced by the injection pipe first diffuses in the diffuser chamber; through the variable cross-section structure formed by the gradually decreasing distance between the top wall of the diffuser chamber and the baffle plate along the gas flow direction, the process gas diffuses to both sides in the width direction in the diffuser chamber and is accelerated and compensated by the physical contraction of the flow cross-sectional area, thereby offsetting the kinetic energy loss of the fluid diffusion along the flow path, and thus maintaining the pressure uniformity of the center and edge of the diffuser chamber in the width direction.

[0033] 2. The present invention provides a plasma vapor deposition apparatus, which utilizes a narrowing section at the junction of the first and second inlet branches and the main inlet pipe to allow two independent process gases to be accelerated by the narrowing section to generate high-speed jets, and to undergo horizontal head-on momentum collision at the central axis of the main inlet pipe, thereby using fluid momentum to break up the laminar boundary at the junction, and thus achieving deep premixing of multiple process gases before entering the diffuser chamber.

[0034] 3. This invention provides a plasma vapor deposition apparatus that utilizes a streamlined structure with a horizontal cross-section of a turbulence column. Specifically, the structure is a teardrop-shaped column with rounded ends facing the inflow direction of the process gas and sharp ends facing the outflow direction of the process gas. This arrangement allows the high-speed process gas injected horizontally from the sidewall injection pipe to smoothly flow along the streamlined sidewall of the turbulence column and gently converge behind the sharp ends in the outflow direction. This prevents the reaction gas from being locally trapped in dead zones and forming solid particles, and avoids the adhesion and accumulation of byproduct dust on the column surface.

[0035] 4. This invention provides a plasma vapor deposition apparatus. By setting spiral blades on the inner wall of the main inlet pipe, the process gas after collision is forced to spiral downwards along a spiral trajectory within the main inlet pipe, thereby significantly extending the three-dimensional flow path and physical residence time of the mixed gas within a limited pipe length, and thus improving the component uniformity of the process gas before entering the diffuser chamber. Through the variable thickness structure of the spiral blades with a triangular cross-section and a thickness near the center that is less than that at the edges, the spiral blades smoothly cut the high-speed airflow with a thinner sharp edge in the central region of the main inlet pipe, while guiding the airflow smoothly through the edge region near the pipe wall with a thicker base, thereby reducing the swirling resistance of the fluid along the flow path.

[0036] 5. This invention provides a plasma vapor deposition apparatus that utilizes a structure in which the porosity of the flow-blocking orifices gradually decreases from the center of the diffuser chamber to both sides. This results in the flow-blocking plate exhibiting greater fluid permeation resistance in the edge region where the corresponding gas static pressure accumulates, and smaller fluid permeation resistance in the central region where the corresponding gas static pressure is relatively low. This forces the balancing of the back pressure difference caused by the boundary stagnation effect of the fluid on the physical cross-section, thereby ensuring that the gas mass flow rate distribution passing through the flow-blocking plate into the pressure-stabilizing chamber within a unit area is of the same order of magnitude, thus ensuring gas pressure uniformity. Attached Figure Description

[0037] The invention will now be further described with reference to the accompanying drawings.

[0038] Figure 1 This is a three-dimensional structural diagram of the entire invention; Figure 2 This is one of the structural schematic diagrams of the vacuum reaction chamber of the present invention; Figure 3 This is the second schematic diagram of the vacuum reaction chamber of the present invention; Figure 4 This is a schematic diagram of the structure of the air extraction frame of the present invention; Figure 5 This is a three-dimensional structural diagram of the dispensing seat of the present invention; Figure 6 This is one of the schematic diagrams showing the disassembled structure of the distribution seat of the present invention; Figure 7This is the second schematic diagram of the disassembled structure of the distribution seat of the present invention; Figure 8 This is a top cross-sectional view of the distribution seat of the present invention; Figure 9 This is a schematic diagram of the front cross-sectional structure of the distribution seat of the present invention; Figure 10 For the present invention Figure 8 Enlarged view of point A in the middle.

[0039] In the diagram: 1. Machine base; 2. Vacuum reaction chamber; 3. Lifting assembly; 4. Linear module; 5. Distribution seat; 501. Diffuser chamber; 502. Pressure stabilizing chamber; 6. Baffle plate; 7. Baffle hole; 8. Spray plate; 9. Distribution chamber; 10. Spray hole; 11. Through slot; 12. Baffle column; 13. Strip groove; 14. Force pin; 15. Injection pipe; 16. Main air intake pipe; 17. First air intake branch pipe; 18. Spiral blade; 19. Cooling channel; 20. RF assembly; 21. Support base; 22. Evacuation frame; 23. Mounting plate; 24. Fin; 25. Second air intake branch pipe; 26. Reduction section; 27. Throttling orifice; 28. Reinforcing plate. Detailed Implementation

[0040] The present invention will be further described in detail below with reference to the embodiments.

[0041] Example 1 like Figures 1-10As shown, the present invention provides a plasma vapor deposition apparatus, including a machine base 1; further comprising: a lifting assembly 3, disposed on the machine base 1, preferably a structure in which a motor drives a lead screw to rotate, causing a slider to move vertically; a vacuum reaction chamber 2, installed on the movable end of the lifting assembly 3; a vacuum pump, used for evacuating the interior of the vacuum reaction chamber 2; a radio frequency assembly 20, used to provide plasma discharge energy to the process gas in the vacuum reaction chamber 2; a linear module 4, the movable end of which is fixedly connected to a mounting plate 23, the linear module 4 being able to drive the mounting plate 23 to perform reciprocating translational motion in the horizontal direction; a support base 21, disposed on the top of the machine base 1, combined with the vacuum reaction chamber 2 to form a sealed chamber for supporting the substrate to be processed; and a gas distribution assembly, installed on the mounting plate 23. It is located above the supporting base 21; the gas distribution assembly includes a distribution seat 5, the interior of which is divided into a diffuser chamber 501 and a pressure stabilizing chamber 502 from top to bottom by a baffle plate 6, the distribution seat 5 is provided with an injection pipe 15 communicating with the diffuser chamber 501, and the baffle plate 6 is provided with a plurality of baffle holes 7; a spray plate 8 is fixedly connected to the bottom of the distribution seat 5, the spray plate 8 is provided with a distribution cavity 9, and the bottom of the spray plate 8 is provided with a plurality of spray holes 10 communicating with the distribution cavity 9; the bottom of the distribution seat 5 is provided with a through groove 11 connecting the pressure stabilizing chamber 502 and the distribution cavity 9; the inner top of the distribution seat 5 forms the top wall of the diffuser chamber 501, and the distance between the top wall of the diffuser chamber 501 and the baffle plate 6 gradually decreases along the gas flow direction to form a variable cross-section structure.

[0042] The power output terminal of the radio frequency component 20 is electrically connected to the spray plate 8. The bearing base 21 is grounded. The two sides of the distribution seat 5 are connected to the mounting plate 23 through insulating parts. The insulating parts are preferably ceramic heat insulation pads or polytetrafluoroethylene insulating blocks.

[0043] In this embodiment, the diffuser chamber 501 and the pressure stabilizing chamber 502 are separated by the baffle plate 6 inside the distribution seat 5, so that the process gas introduced by the injection pipe 15 diffuses first in the diffuser chamber 501. Through the variable cross-section structure formed by the gradual reduction of the distance between the top wall of the diffuser chamber 501 and the baffle plate 6 along the gas flow direction, the process gas diffuses to both sides in the width direction in the diffuser chamber 501. As the flow cross-sectional area shrinks, it is accelerated and compensated, thereby offsetting the kinetic energy loss of the fluid diffusion along the flow path, and thus maintaining the pressure uniformity of the center and edge of the diffuser chamber 501 along the width direction. During operation, the substrate to be processed is placed on the support base 21 at the top of the machine tool 1. The lifting assembly 3 on the machine tool 1 drives the vacuum reaction chamber 2, which is mounted on its movable end, to descend, combining with the support base 21 and closing to form a sealed chamber. Subsequently, the vacuum pump connected to the vacuum reaction chamber 2 is started to perform a vacuuming operation inside the vacuum reaction chamber 2 to establish a low-pressure deposition environment. The process gas is introduced into the diffuser chamber 501 inside the distribution seat 5 through the injection pipe 15 on the distribution seat 5. In the diffuser chamber 501, the process gas diffuses in all directions. Since the distance between the top wall of the diffuser chamber 501 and the baffle plate 6 gradually decreases along the gas flow direction, this variable cross-section structure forces the process gas diffusing along the width direction of the substrate to accelerate in the narrower channel. The dynamic pressure generated by the increased flow velocity compensates for the pressure drop along the flow path caused by gas friction.

[0044] The process gas flows downward through several flow-blocking holes 7 into the pressure-stabilizing gas chamber 502. During this process, the flow-blocking holes 7 physically throttle the gas, forcing the gas flow rate to decrease and transform into a uniform static pressure flow state. Subsequently, the process gas in the pressure-stabilizing gas chamber 502 flows smoothly into the distribution cavity 9 inside the spray plate 8 through the through groove 11 at the bottom of the distribution seat 5. After secondary pressure equalization and buffering through the spatial volume of the distribution cavity 9, it passes vertically through several spray holes 10 at the bottom of the spray plate 8 and is sprayed into the vacuum reaction chamber 2 above the support base 21. While the gas is being sprayed uniformly, the radio frequency component 20 provides plasma discharge energy to the process gas in the vacuum reaction chamber 2, exciting the gas to form a plasma state and undergo a vapor deposition reaction on the surface of the substrate to be processed.

[0045] During the deposition reaction process described above, the linear module 4 configured on the machine 1 outputs driving force, which drives the mounting plate 23 fixed at the movable end and the gas distribution component located above the support base 21 to perform reciprocating translational motion on the horizontal plane. The spray plate 8 performs periodic reciprocating translational motion along the length direction of the substrate to be treated, so that the plasma reaction flow ejected from each nozzle 10 performs multi-layer overlapping deposition and coverage in the length direction of the substrate, thereby achieving comprehensive and uniform coating.

[0046] Example 2 like Figure 8 and Figure 10 As shown, based on Embodiment 1, the present invention provides a technical solution: preferably, the gas distribution assembly further includes a gas mixing connector connected to the diffuser chamber 501; the gas mixing connector includes a main intake pipe 16 connected to the injection pipe 15, and a first intake branch pipe 17 and a second intake branch pipe 25 coaxially connected to both sides of the main intake pipe 16 in the horizontal direction; the first intake branch pipe 17 and the second intake branch pipe 25 are both formed with a narrowed section 26 at the intersection with the main intake pipe 16.

[0047] In this embodiment, the reduced diameter section 26 at the intersection of the first intake branch pipe 17 and the second intake branch pipe 25 with the main intake pipe 16 is used to make the two independent process gases accelerate through the reduced diameter section to generate high-speed jets, and then have horizontal head-on momentum collisions at the central axis of the main intake pipe 16. This uses fluid momentum to break up the laminar boundary at the intersection, thereby achieving deep premixing of multiple process gases before entering the diffuser chamber 501.

[0048] During operation, the first process gas and the second process gas are independently introduced into the first intake branch pipe 17 and the second intake branch pipe 25, respectively. Due to the physical contraction of the inner diameter of the narrowing section 26, the cross-sectional area of ​​the two gases decreases sharply when passing through the narrowing section 26, and the flow velocity increases accordingly and is transformed into a high-energy jet. The two high-speed jets collide horizontally at the central axis of the main intake pipe 16. The huge fluid momentum difference generated by the collision causes the independent fluid micro-particles that originally maintained a laminar flow state to undergo violent turbulent physical exchange. Thus, before the mixed gas is injected into the diffuser chamber 501, the uniform premixing at the molecular level is completed in advance, thereby ensuring the consistency of the plasma chemical reaction rate in each region of the reaction chamber.

[0049] In a specific thin film deposition process (such as deposition of silicon nitride or silicon oxide thin films), the first process gas can be silane gas, and the second process gas can be ammonia or nitrous oxide gas.

[0050] Example 3 like Figure 6 , Figure 8 and Figure 10 As shown, based on Embodiment 2, the present invention provides a technical solution: Preferably, the injection pipe 15 is installed on the side wall of the distribution seat 5; a plurality of turbulence columns 12 are fixedly provided on the top wall of the diffuser chamber 501, and each of the turbulence columns 12 has a downwardly protruding force-bearing pin 14 at its bottom; the baffle plate 6 has a plurality of strip grooves 13 on the side facing the top wall for the force-bearing pins 14 to be embedded; each of the force-bearing pins 14 is respectively embedded in the corresponding strip groove 13 so that the turbulence column 12 is vertically supported between the top wall and the baffle plate 6; the horizontal cross section of the turbulence column 12 has a streamlined structure, and the blunt end of the turbulence column 12 faces the inflow direction of the process gas, and the sharp end faces the outflow direction of the process gas.

[0051] In this embodiment, the streamlined structure of the horizontal cross-section of the turbulence column 12 is utilized. Specifically, the structure is a teardrop-shaped column with its blunt end facing the inflow direction of the process gas and its sharp end facing the outflow direction of the process gas. This arrangement allows the high-speed process gas injected horizontally from the side wall injection pipe 15 to smoothly flow along the streamlined side wall of the turbulence column 12 and gently converge behind the sharp end in the outflow direction. This prevents the reaction gas from being locally trapped in the dead zone of the flow rate and forming solid particles, and avoids the adhesion and accumulation of by-product dust on the surface of the column. In addition, by embedding the force-bearing pin 14 in the strip groove 13, this structure provides vertical support while releasing the thermal lateral expansion displacement between the top wall and the baffle plate 6.

[0052] Specifically, the process gas is injected laterally and horizontally into the diffuser chamber 501. For the high-speed process gas flow injected laterally, the fluid will inevitably collide with the distributed turbulence columns 12 during radial diffusion. The blunt end first cuts through the horizontally incident process gas flow. Due to the flow-guiding geometric constraints of the streamlined cross-section, the air flow accelerates and slides backward along the streamlined sidewall of the turbulence column 12, and smoothly closes the streamline at the sharp end of the tail. In terms of the physical state of the gas, this shape eliminates the velocity dead angle or vortex shedding phenomenon generated in the leeward area when the fluid bypasses physical obstacles, maintains the continuity of the flow field inside the diffuser chamber 501, and reduces the attachment and residence time of dust particles in the low-pressure area behind the column. In addition, by utilizing the sliding engagement of the force pin 14 and the strip groove 13, the turbulence column 12 can support the flow in the vertical direction while accommodating the horizontal thermal deformation generated between the components under high-temperature conditions.

[0053] like Figure 8 and Figure 10 As shown, preferably, a spiral blade 18 is fixedly connected to the inner wall of the main intake pipe 16. The cross-section of the spiral blade 18 is triangular, and the thickness of the spiral blade 18 near the center is less than that of the edge.

[0054] In this embodiment, by providing spiral blades 18 on the inner wall of the main intake pipe 16, the process gas after collision is forced to spiral downwards along a spiral trajectory in the main intake pipe 16, thereby multiplying the three-dimensional flow path and physical residence time of the mixed gas within a limited pipe length, thereby improving the component uniformity of the process gas before entering the diffuser chamber 501. However, conventional guide vanes inside the pipe have high wind resistance, which can easily lead to a sharp increase in fluid pressure drop and create dead airflow angles at the junction of the vanes and the pipe wall, causing the deposition and agglomeration of reactive dust.

[0055] Furthermore, by using the variable thickness structure of the spiral blade 18, which has a triangular cross-section and a thickness near the center that is less than that at the edge, the spiral blade 18 smoothly cuts the high-speed airflow with a thinner sharp edge in the central region of the main intake pipe 16, while guiding the airflow smoothly through the edge region near the pipe wall with a thicker base. This reduces the swirling resistance of the fluid along the flow path and eliminates the right-angle velocity dead zone at the blade root.

[0056] During the mixed-gas operation phase of the equipment, the process gas flow after the initial collision at the front end travels downward along the main inlet pipe 16 and impacts the spiral blade 18. Utilizing the geometric constraints of the continuous spiral curved surface of the spiral blade 18, the original straight downward laminar or weak turbulent flow is transformed into a high-speed rotating vortex flow field, causing the trajectory of the process gas to change from a one-dimensional straight line to a three-dimensional spiral. Under the coupling action of centrifugal force and pipe wall shear force, the fluid micro-particles undergo secondary deep physical mixing. The spiral blade 18 adopts a triangular cross-sectional shape with varying thickness in the radial direction. When the airflow passes through the spiral blade 18, the thinner, sharper edge in the central region cuts into the fluid first with a very small windward cross-sectional area, allowing the airflow to smoothly slide along the two sides of the triangle towards the center.

[0057] Example 4 like Figure 7 , Figure 8 and Figure 9 As shown, based on Embodiment 3, the present invention provides a technical solution: preferably, the plurality of flow-blocking holes 7 on the flow-blocking plate 6 are arranged in a structure with gradually decreasing porosity along the center of the diffuser chamber 501 to both sides.

[0058] In this embodiment, the flow-blocking holes 7 are arranged in a structure with gradually decreasing porosity from the center of the diffuser chamber 501 to both sides. This results in the flow-blocking plate 6 exhibiting greater fluid permeation resistance in the edge region where the corresponding airflow static pressure accumulates, and smaller fluid permeation resistance in the central region where the corresponding airflow static pressure is relatively low. This forces the back pressure difference caused by the boundary stagnation effect of the fluid to be balanced on the physical cross section, thereby ensuring that the mass flow rate of the gas passing through the flow-blocking plate 6 into the pressure-stabilizing chamber 502 within a unit area is on the same order of magnitude, thus ensuring gas pressure uniformity.

[0059] During the stage where the fluid permeates downwards from the diffuser chamber 501, the process gas with the highest initial jet kinetic energy gathers in the central region of the diffuser chamber 501. The porosity of the flow-blocking holes 7 on the baffle plate 6 gradually increases from the center to both sides (i.e., the radial diffusion direction of the airflow). This causes the central region where the fluid dynamic pressure peak is located to encounter a denser metal blockage, while the edge region where the fluid dynamic pressure is relatively weaker obtains a larger gas flow cross-sectional area. This gradient throttling principle constructs a negative feedback regulation mechanism in fluid dynamics, which forces the high-kinetic-energy airflow to decelerate and diffuse, while the low-kinetic-energy airflow is compensated for its passage. As a result, the process gas enters the subsequent pressure-stabilizing chamber 502 under a uniform static pressure state.

[0060] like Figure 6 and Figure 7 As shown, preferably, the distribution seat 5 is embedded with a cooling channel 19, which is arranged close to the inner metal wall of the diffuser chamber 501; the cooling channel 19 includes a U-shaped flow channel loop; and fins 24 extending along the flow direction of the cooling medium are machined on the inner wall of the cooling channel 19. Figure 7 (Fin 24 is omitted to clearly show the cooling channel 19). The two ends of the cooling channel 19 are respectively connected to the input and output ends of the external cold source.

[0061] In this embodiment, the cooling channel 19, which is embedded in the distribution seat 5 and arranged close to the metal inner wall of the diffuser chamber 501, allows the externally input cooling medium to circulate and absorb heat in the high-temperature zone, thereby reducing the overall temperature of the gas distribution chamber 9. However, conventional cooling water circuits have limited heat exchange area, making it difficult to effectively eliminate local hot spots on the heated surface. Furthermore, by machining fins 24 extending along the flow direction of the cooling medium on the inner wall of the cooling channel 19, the contact area between the coolant and the metal is increased, improving the heat exchange effect while maintaining the laminar flow smoothness of the cooling medium. This increases the convective heat transfer rate at the bottom of the channel without increasing the resistance of the fluid pumping network, thereby controlling the interface temperature of the distribution components below the critical threshold for thermal decomposition of the process gas.

[0062] The cooling medium (such as cooling pure water or thermally conductive fluorine liquid) output from the external cold source is pumped in from the input end, and after being forcibly circulated along the cooling channel 19, it carries away the heat from the output end. Utilizing the spatial layout of the cooling channel 19 close to the metal inner wall of the diffuser chamber 501, the cooling medium and the high-temperature surface inside the chamber form an extremely short solid heat conduction path. In response to the high heat flux density at the bottom of the chamber, the inner wall of the cooling channel 19 (i.e., the heated surface closest to the lower heat source) is milled with several strip-shaped fins 24. When the cooling medium flows through the bottom of the channel, since the extension direction of the fins 24 is parallel to the macroscopic flow direction of the cooling medium, the fluid smoothly passes through the gaps formed by the fins 24, avoiding the fluid dynamic pressure loss and eddy current resistance caused by the transverse water-blocking structure. Under the condition of ensuring the circulation flow rate, the effective contact area of ​​solid-liquid interface convective heat transfer is increased, accelerating the directional transfer of the heat flow accumulated at the bottom to the cooling medium.

[0063] Example 5 like Figure 1 , Figure 3 and Figure 4 As shown, based on Embodiment 4, the present invention provides a technical solution: Preferably, a vacuum frame 22 surrounds the bearing base 21, the lower part of the inner side of the vacuum frame 22 is fixedly connected to the bearing base 21, and there is a gap between the upper part of the inner side of the vacuum frame 22 and the bearing base 21. The vacuum pump is fixedly installed inside the machine base 1, and the vacuum pump's suction pipe is connected to the central part of one side of the vacuum frame 22 (i.e., Figure 4 (The part indicated by the arrow in the right-hand pipe); a throttling orifice 27 is provided on the suction frame 22; along the suction end away from the vacuum pump suction pipe, the diameter of the throttling orifice 27 is arranged in a gradually increasing manner.

[0064] In this embodiment, the suction frame 22 surrounding the support base 21 and the throttling orifice 27 are arranged in a gradually increasing pattern along the suction end away from the vacuum pump suction pipe. This results in the suction frame 22 exhibiting greater fluid exhaust resistance in the high negative pressure region near the vacuum pump and smaller fluid exhaust resistance in the low negative pressure region away from the vacuum pump. This forces the exhaust conductivity of the vacuum reaction chamber 2 edge to be balanced in the physical circumference, thereby ensuring that the exhaust gas discharge rate of each radial region above the support base 21 is in dynamic equilibrium, and avoiding airflow turbulence in the vacuum reaction chamber 2 from affecting the deposition uniformity.

[0065] A vacuum frame 22 is arranged around the outer periphery of the support base 21. A gap for gas flow is reserved between the upper part of the inner side of the vacuum frame 22 and the support base 21. During the exhaust operation stage of the thin film deposition process, the vacuum pump located inside the machine 1 is started and a high vacuum negative pressure is continuously applied to the central part of one side of the vacuum frame 22 through the vacuum pipe. The waste gas and unfinished process gas after the deposition reaction in the reaction chamber first diffuse outward radially, enter the vacuum frame 22 through the reserved gap, and then be concentrated and extracted through the distributed throttling holes 27. To address the circumferential pressure difference within the cavity that inevitably occurs with unilateral center pumping, the size of the throttling orifice 27 on the pumping frame 22 is configured in a gradient variation mode. Due to the frictional resistance effect of the fluid in the vacuum pipeline, the actual negative pressure of the region is smaller the further away from the vacuum pump pumping pipe. By setting a larger diameter throttling orifice 27 in this low negative pressure region, the exhaust capacity of this region is physically compensated by increasing the flow cross-sectional area. Conversely, a smaller diameter throttling orifice 27 is set in the high negative pressure region near the pumping pipe to suppress the excessively fast exhaust gas velocity in this region through physical throttling. This exhaust resistance adjustment principle constructs an annular boundary with equivalent exhaust capacity around the bearing base 21, eliminating the interference of center airflow deviation caused by asymmetric pumping.

[0066] like Figure 7 and Figure 9 As shown, preferably, a plurality of reinforcing plates 28 are integrally formed between the top and bottom of the inner wall of the distribution cavity 9.

[0067] In this embodiment, several reinforcing plates 28 integrally formed between the top and bottom of the inner wall of the distribution cavity 9 are used to ensure that when the spray plate 8 is subjected to the extreme pressure difference between the external atmospheric pressure and the internal high vacuum, the top plate and the bottom plate of the distribution cavity 9 obtain rigid vertical tensile and compressive constraints, thereby offsetting the deflection deformation of the large-sized metal components in the vertical direction, and thus maintaining the macroscopic absolute flatness of the bottom of the spray plate 8 under the vacuum working state of the equipment.

[0068] In the distribution chamber 9 space inside the spray plate 8, several reinforcing plates 28 are integrally formed between the top and bottom of the metal inner wall. During the vacuum operation phase of the equipment, the vacuum reaction chamber 2 and the distribution chamber 9 are in an extremely low pressure state. The external structure of the spray plate 8 bears a huge downward uniform load from the ambient atmospheric pressure. Through the vertical rigid connection path constructed between the top and bottom walls by the integrally formed reinforcing plates 28, the bending moment load originally borne by a single plate is forcibly distributed to the overall box-shaped structure with internal ribs, thereby using its own physical tensile and compressive strength to resist the inward collapse caused by the external pressure difference.

[0069] Preferably, the bottom surface of the spray plate 8 away from the distribution seat 5 is provided with a roughened anti-stripping anchoring layer, and the anti-stripping anchoring layer is a sandblasted surface.

[0070] In this embodiment, a roughened anti-stripping anchoring layer (such as a sandblasted surface) is provided on the bottom surface of the spray plate 8 away from the distribution seat 5. This allows the parasitic film layer attached to this surface to form a three-dimensional mechanical interlock at the microscopic level with the rough metal substrate during process operation. This multiplies the interfacial adhesion of the parasitic film layer, thereby preventing the continuously thickened deposited film layer from cracking and peeling off under thermal stress cycling.

[0071] The bottom surface of the spray plate 8 (i.e., the high-temperature reaction surface facing the bearing base 21) is processed with an anti-peeling anchoring layer. Optionally, this anti-peeling anchoring layer is a sandblasted surface with a roughness reaching a set threshold. In the continuous thin film deposition process, gaseous by-products and some reactive gases will inevitably react continuously at the bottom of the spray plate 8 and form a parasitic film layer. Since the spray plate 8 undergoes severe temperature cycles during process heating and standby cooling, the thermal deformation difference between the parasitic film layer and the metal substrate will induce stress concentration. By utilizing the numerous concave and convex textures on the microscopic morphology of the sandblasted surface, the continuously growing parasitic deposits are deeply embedded in the micro-pits of the metal surface. This microscopic mechanical interlocking effect counteracts the film layer detachment stress caused by temperature alternation, so that the parasitic film layer is stably attached to the bottom surface of the spray plate 8, thereby avoiding film layer cracking, falling off and generating dust particles.

[0072] The present invention has been described in detail above. However, modifications or improvements can be made to it, which will be obvious to those skilled in the art. Therefore, any modifications or improvements that do not depart from the spirit of the present invention are within the scope of protection of the present invention.

Claims

1. A plasma vapor deposition apparatus, comprising a machine base (1); characterized in that, Also includes: A lifting assembly (3) is mounted on the machine base (1); The vacuum reaction chamber (2) is installed at the movable end of the lifting assembly (3); A vacuum pump is used to perform a vacuuming operation inside the vacuum reaction chamber (2); Radio frequency component (20) is used to provide plasma discharge energy for the process gas in the vacuum reaction chamber (2); A linear module (4) is provided, with a mounting plate (23) fixedly connected to its movable end. The linear module (4) can drive the mounting plate (23) to perform reciprocating translational motion in the horizontal direction. The support base (21) is set on the top of the machine (1) and combined with the vacuum reaction chamber (2) to form a sealed chamber for supporting the substrate to be processed; A gas distribution assembly is mounted on the mounting plate (23) and located above the support base (21); The gas distribution assembly includes a distribution seat (5), the interior of which is divided into a diffuser chamber (501) and a pressure stabilizing chamber (502) from top to bottom by a baffle plate (6). An injection pipe (15) communicating with the diffuser chamber (501) is provided on the distribution seat (5), and a plurality of baffle holes (7) are provided on the baffle plate (6). The bottom of the distribution seat (5) is fixedly connected to a spray plate (8), the inside of the spray plate (8) is provided with a distribution cavity (9), and the bottom of the spray plate (8) is provided with a plurality of spray holes (10) communicating with the distribution cavity (9); the bottom of the distribution seat (5) is provided with a through groove (11) communicating with the pressure stabilizing air chamber (502) and the distribution cavity (9). The distance between the top wall of the diffuser chamber (501) and the baffle plate (6) gradually decreases along the gas flow direction to form a variable cross-section structure.

2. The plasma vapor deposition apparatus according to claim 1, characterized in that: The gas distribution assembly also includes a gas mixing connector connected to the diffuser chamber (501); the gas mixing connector includes a main intake pipe (16) connected to the injection pipe (15), and a first intake branch pipe (17) and a second intake branch pipe (25) coaxially connected to both sides of the main intake pipe (16) in the horizontal direction; the first intake branch pipe (17) and the second intake branch pipe (25) are both connected to the main intake pipe (16) with a narrowed section (26) at the intersection of the main intake pipe (16).

3. The plasma vapor deposition apparatus according to claim 2, characterized in that: The injection pipe (15) is installed on the side wall of the distribution seat (5); the top wall of the diffuser chamber (501) is fixedly provided with a plurality of turbulence columns (12), and the bottom of each turbulence column (12) is provided with a downward protruding force pin (14); the side of the baffle plate (6) facing the top wall is provided with a plurality of strip grooves (13) for the force pins (14) to be embedded; each force pin (14) is respectively embedded in the corresponding strip groove (13) so that the turbulence column (12) is vertically supported between the top wall and the baffle plate (6); the horizontal cross section of the turbulence column (12) is streamlined, and the blunt end of the turbulence column (12) faces the inflow direction of the process gas, and the sharp end faces the outflow direction of the process gas.

4. The plasma vapor deposition apparatus according to claim 3, characterized in that: A spiral blade (18) is fixedly connected to the inner wall of the main intake pipe (16). The cross-section of the spiral blade (18) is triangular, and the thickness of the spiral blade (18) near the center is less than that of the edge.

5. The plasma vapor deposition apparatus according to claim 4, characterized in that: The flow-blocking holes (7) on the flow-blocking plate (6) are arranged in a structure with gradually decreasing porosity from the center of the diffuser chamber (501) to both sides.

6. The plasma vapor deposition apparatus according to claim 5, characterized in that: The distribution seat (5) is internally provided with a cooling channel (19), which is arranged close to the metal inner wall of the diffuser chamber (501); the cooling channel (19) includes a U-shaped channel loop; fins (24) extending along the flow direction of the cooling medium are processed on the inner wall of the cooling channel (19); the two ends of the cooling channel (19) are respectively connected to the input end and the output end of the external cold source.

7. The plasma vapor deposition apparatus according to claim 6, characterized in that: The support base (21) is surrounded by a vacuum frame (22). The lower part of the inner side of the vacuum frame (22) is fixedly connected to the support base (21). There is a gap between the upper part of the inner side of the vacuum frame (22) and the support base (21). The vacuum pump is fixedly installed inside the machine (1). The vacuum pump's suction pipe is connected to the central part of one side of the vacuum frame (22). The vacuum frame (22) is provided with a throttling hole (27). Along the suction end away from the vacuum pump's suction pipe, the diameter of the throttling hole (27) is arranged in a gradually increasing manner.

8. The plasma vapor deposition apparatus according to claim 7, characterized in that: Several reinforcing plates (28) are integrally formed between the top and bottom of the inner wall of the distribution cavity (9).

9. The plasma vapor deposition apparatus according to claim 8, characterized in that: The bottom surface of the spray plate (8) away from the distribution seat (5) is provided with a roughened anti-stripping anchoring layer, which is a sandblasted surface.

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