A vertical high-temperature purification furnace for graphene purification

Abstract

This invention discloses a vertical high-temperature purification furnace for graphene purification, relating to the field of graphene purification technology. It includes a mounting frame slidably disposed within the furnace body; a graphene body and connecting column hinged to the top of a support column, which adapt to the weight of the graphene body and deform accordingly; equidistant limiting beads hinged at equal intervals to the inner sides of the support and connecting columns, changing their contact points with the graphene as they shift; a first gas container fixed to the outside of the furnace body and connected to a gas flow pipe for temporary gas storage; a second gas container fixed to the outside of the furnace body for receiving and storing gas; and push columns equidistantly inserted into one side of the furnace body. This invention cleverly utilizes the characteristic that graphene gradually decreases in weight during purification due to impurity removal. By leveraging the force generated by the gas entering during partial purification, it dynamically changes the contact area between the graphene film and the container, ensuring uniform exposure of the film to the reaction gas, thus achieving comprehensive and uniform purification.

Description

Technical Field

[0001] This invention relates to the field of graphene purification technology, specifically a vertical high-temperature purification furnace for graphene purification. Background Technology

[0002] The vertical high-temperature purification furnace for graphene purification is based on the principle of high-temperature annealing. In a protective atmosphere or vacuum, the unstable functional groups in graphene are decomposed and metal impurities evaporate or diffuse away through the introduction of different gases at different temperature stages. At the same time, carbon atoms are rearranged to repair lattice defects. Its vertical structure design is conducive to forming a uniform temperature field and controllable airflow, so as to achieve efficient volatilization and removal of impurities.

[0003] Thin-film graphene is typically laid flat on a special perforated tray or placed vertically on a perforated support, and then placed in a purification furnace for purification. During the purification process, the surface of the film is made to come into uniform contact with the reaction atmosphere (such as hydrogen or argon), while ensuring the uniform distribution of heat and airflow, thereby efficiently removing residual polymer or metal impurities and ultimately obtaining a structurally intact, high-purity graphene film.

[0004] During long-term high-temperature purification, regardless of whether a perforated container or a vertical placement method is used, there is always a fixed contact area between the graphene film and the container. These contact surfaces block the direct action of the reactive gases, forming a "shielding effect." This prevents impurities below the contact point from being fully etched or volatilized, resulting in uneven purification and local performance degradation. At the same time, the fixed contact surfaces cannot adapt to this deformation and instead become stress concentration points, heat transfer barriers, and potential sources of contamination. The uneven distribution of heat in the contact area will generate local temperature differences, hindering the flow of reactive gases to the back of the film, forming purification dead zones. Furthermore, due to the difference in thermal expansion coefficients between materials, additional irreversible wrinkles or cracks may be introduced.

[0005] To address the aforementioned issues, there is an urgent need for innovative designs based on the existing vertical high-temperature purification furnaces used for graphene purification. Summary of the Invention

[0006] The present invention addresses the problem of overly simplistic solutions in existing technologies by providing a significantly different solution. Specifically, the present invention aims to provide a vertical high-temperature purification furnace for graphene purification, thereby solving the problem mentioned in the background technology that during the high-temperature purification of graphene, there is always a fixed contact area between the graphene film and the container. These contact surfaces can block the direct action of reaction gases, affecting the uniformity and performance of purification.

[0007] To achieve the above objectives, the present invention provides the following technical solution: a vertical high-temperature purification furnace for graphene purification, comprising a purification furnace body, an airflow pipe connected to the surface of the purification furnace body, and a graphene body placed in the purification furnace body, and further comprising: A sliding rack is installed in the main body of the purification furnace to hold the graphene substrate; The support and connecting columns are hinged at the top of the placement frame and adapt to the weight of the graphene body, deforming adaptively. Equally spaced hinged inner sides of support columns and connecting columns, the limiting beads change their contact points with graphene as they shift. A first gas tank, fixed to the outside of the purification furnace body and connected to the gas flow pipe, temporarily stores the gas. A second gas tank fixed to the outside of the purification furnace body for receiving and storing gases; Simultaneously, a bidirectional piston rod is inserted into the first and second gas tanks, and the thrust is generated by the change in the amount of gas. The push column, which is equidistantly inserted on one side of the purification furnace body, pushes the graphene body and the connecting column to deform according to the gas thrust.

[0008] Preferably, the inner wall of the purification furnace body is fixed with square slide rails at equal angles, and slide rods are slidably inserted in the square slide rails, and the slide rods are distributed at equal angles on the surface of the placement rack; The placement racks are arranged at equal intervals in an "S" shape, and airflow holes are equally spaced on the surface of the placement racks.

[0009] Preferably, a third gas tank is fixedly connected to one side of the purification furnace body at equal intervals, and a push column is movably inserted into the third gas tank; One end of the push column moves through the third gas tank and extends into the purification furnace body, where it contacts the limiting slider.

[0010] Preferably, multiple sets of airflow pipes are provided, and multiple sets of airflow pipes are connected to the top of the purification furnace body, while an airflow pipe is connected to the bottom of the purification furnace body. A rotating flange is installed at the connection between the gas flow pipe and the main body of the purification furnace, and the two are connected by the rotating flange.

[0011] Preferably, the first gas tank and the gas flow pipe are symmetrically connected by a connecting pipe, and a flow valve is installed on the surface of the connecting pipe above the gas flow pipe; A connecting pipe is provided between the second gas tank and the third gas tank, and one end of the connecting pipe is simultaneously connected to multiple sets of third gas tanks at equal intervals.

[0012] Preferably, the second gas container stores gas; A sealing ring is provided between the push column and the purification furnace body, and sealing rings are provided at the contact points between the surface of the bidirectional piston rod and the first gas tank and the second gas tank, respectively.

[0013] Preferably, the top of the placement rack is symmetrically and movably provided with an arc-shaped groove, and a limiting slider is movably inserted in the arc-shaped groove, and a connecting column is hinged to both sides of the limiting slider. One side of the limiting slider is fixedly connected to a fixing rod, and multiple sets of fixing rods are evenly distributed.

[0014] Preferably, the support column and the connecting column are symmetrically hinged at equal intervals at the top of the placement frame, and a connecting rod is symmetrically hinged to one end of the inner side of each of the support column and the connecting column. A limiting ball is inserted into the middle of the symmetrically distributed connecting rods, and a graphene body is movably placed in the middle of the limiting ball.

[0015] Preferably, the graphene substrates are symmetrically arranged at equal intervals above the placement frame; The four corners of the top and bottom ends of the multiple graphene bodies are in contact with the limiting beads.

[0016] Preferably, a first spring is wound around the surface of the bidirectional piston rod, and the two ends of the first spring are fixed to the inner wall of the second gas tank and the surface of the bidirectional piston rod, respectively. The surface of the push column is wound with a second spring, and the two ends of the second spring are fixed to the inner wall of the third gas tank and the surface of the push column, respectively.

[0017] Compared with the prior art, the beneficial effects of the present invention are: This invention cleverly utilizes the characteristic that graphene gradually decreases in weight during purification due to the removal of impurities. By leveraging the force generated by the gas introduced during partial purification, the contact area between the graphene film and the container is dynamically altered, effectively breaking the "shading effect" caused by fixed contact. This allows the film to be uniformly exposed to the reaction gas, achieving comprehensive and uniform purification. This dynamic adjustment avoids stress concentration and heat transfer barriers caused by fixed contact points, significantly reducing structural damage such as wrinkles and cracks caused by local temperature differences and differences in thermal expansion coefficients. At the same time, it promotes the flow of reaction gas on the back of the film, eliminating purification dead zones. The entire process forms an adaptive and self-regulating purification mechanism without complex external intervention, ultimately significantly improving the structural integrity and performance consistency of the graphene film. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the first three-dimensional structure of the present invention.

[0019] Figure 2 This is a schematic diagram of the second three-dimensional structure of the present invention.

[0020] Figure 3 This is a three-dimensional structural diagram of the shelf and square slide rail of the present invention.

[0021] Figure 4 This is a three-dimensional structural diagram of the shelf and graphene body of the present invention.

[0022] Figure 5 This is a three-dimensional structural diagram of the shelf and fixing rod of the present invention.

[0023] Figure 6 This is a three-dimensional structural diagram of the support column and connecting column of the present invention.

[0024] Figure 7 This is a three-dimensional structural diagram of the limiting ball and connecting rod of the present invention.

[0025] Figure 8 For the present invention Figure 7 A schematic diagram of the three-dimensional explosion structure.

[0026] Figure 9 This is a schematic diagram of the third three-dimensional structure of the present invention.

[0027] Figure 10 This is a three-dimensional cross-sectional structural diagram of the first gas tank, the second gas tank, and the third gas tank of the present invention.

[0028] Figure 11 This is a schematic diagram illustrating the usage state of the present invention.

[0029] Figure 12 This is a schematic diagram illustrating the usage state of the present invention.

[0030] In the diagram: 1. Purification furnace body; 2. Gas flow pipe; 3. First gas tank; 4. Second gas tank; 5. Placement rack; 6. Square slide rail; 7. Support column; 8. Fixing rod; 9. Graphene body; 10. Connecting column; 11. Limiting slider; 12. Limiting ball; 13. Connecting rod; 14. Bidirectional piston rod; 15. Third gas tank; 16. Pushing column; 17. First spring; 18. Second spring. Detailed Implementation

[0031] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0032] Please see Figures 1 to 12 The present invention provides a technical solution: a vertical high-temperature purification furnace for graphene purification, comprising a purification furnace body 1, an airflow pipe 2 connected to the surface of the purification furnace body 1, and a graphene body 9 placed in the purification furnace body 1, and further comprising: A sliding rack 5 is installed in the purification furnace body 1 to hold the graphene body 9; The support column 7 and connecting column 10 are hinged at the top of the placement frame 5 and are pushed based on the weight-adaptive deformation of the graphene body 9. The limiting beads 12 are hinged at equal intervals to the inside of the support column 7 and the connecting column 10, and their contact points with the graphene change with their displacement. A first gas tank 3, fixed to the outside of the purification furnace body 1 and connected to the gas flow pipe 2, temporarily stores the gas. A second gas tank 4 is fixed to the outside of the purification furnace body 1 for receiving and storing gas; Simultaneously, a bidirectional piston rod 14, which is inserted into the first gas tank 3 and the second gas tank 4, is thrusted by changes in the amount of gas. A push column 16, which is equidistantly inserted on one side of the purification furnace body 1, pushes the graphene body 9 and the connecting column 10 to deform according to the gas thrust.

[0033] Additionally, it should be noted that vertical high-temperature purification furnaces are mainly used for the high-temperature purification of carbon materials such as graphene substrate 9. The core principle is to use direct high-temperature heating and chemical methods by introducing specific process gases under the protection of ultra-high vacuum or inert atmosphere. Different process gases are introduced at different temperature levels (low temperature, medium temperature, and high temperature stages) to generate volatile chlorides or hydrides, which are then extracted by the vacuum system. The gases react with impurities such as metals in the material through vaporization or chemical reaction, and are thus removed in gaseous form, ultimately obtaining high-purity graphene substrate 9 products.

[0034] In specific implementation, a square slide rail 6 is fixed at equal angles on the inner wall of the purification furnace body 1, and a slide rod is slidably inserted in the square slide rail 6, and the slide rod is distributed at equal angles on the surface of the placement rack 5. Additionally, it should be noted that when the graphene substrate 9 is placed in the placement rack 5 before the reaction and needs to be removed after the reaction, the top of the placement rack 5 is pulled to drive the slide bar to slide in the square slide rail 6. This limits the position of the placement rack 5 and gives it a certain trajectory when moving up and down, thus preventing the graphene substrate 9 from deviating when the placement rack 5 is rotated during movement.

[0035] The placement racks 5 are distributed at equal intervals in an "S" shape, and airflow holes are opened at equal intervals on the surface of the placement racks 5.

[0036] Additionally, it should be noted that the "S"-shaped design facilitates the removal of the graphene substrate 9 from different positions, and the airflow holes facilitate gas passage and circulation, thereby achieving the purification of the graphene substrate 9.

[0037] In specific implementation, a third gas tank 15 is fixedly connected to one side of the purification furnace body 1 at equal intervals, and a push column 16 is movably inserted into the third gas tank 15. One end of the push column 16 moves through the third gas tank 15 and extends into the purification furnace body 1, where it contacts the limiting slider 11.

[0038] In practice, multiple sets of airflow pipes 2 are provided, and multiple sets of airflow pipes 2 are connected to the top of the purification furnace body 1, and airflow pipes 2 are connected to the bottom of the purification furnace body 1. In addition, it should be noted that the multiple sets of gas flow pipes 2 at the top of the purification furnace body 1 introduce different gases, and open and close them at different temperature stages to introduce different reaction gases into the purification furnace body 1. The gas flow pipe 2 at the bottom of the purification furnace body 1 is a single gas outlet pipe, and at the rear end it is divided into three sets of gas outlet pipes corresponding to the gas at the top.

[0039] A rotating flange is installed at the connection between the gas flow pipe 2 and the purification furnace body 1, and the two are connected by the rotating flange.

[0040] Additionally, it should be noted that the cover at the top of the purification furnace body 1 is connected to the gas flow pipe 2 via a rotating flange. The cover is opened and closed by rotation, and a high-performance rotary sealing ring is used at the connection point to ensure that gas does not leak from the connection surface when the cover is rotating or in the closed state.

[0041] In specific implementation, the first gas tank 3 and the gas flow pipe 2 are symmetrically connected by a connecting pipe, and a flow valve is installed on the surface of the connecting pipe above the gas flow pipe 2. Additionally, it should be noted that unidirectional gas flow is permitted, and the system automatically closes or opens under corresponding conditions. When the bidirectional piston rod 14 in the first gas tank 3 is in the middle position, the flow valve closes when the amount of gas introduced reaches half the capacity of the first gas tank 3. When the bidirectional piston rod 14 in the first gas tank 3 moves to the bottom, excess space and negative pressure are generated in the first gas tank 3, and the flow valve opens to inject new gas until the bidirectional piston rod 14 resets and pushes the gas in the first gas tank 3 to be discharged. At this time, the flow valve opens to discharge the gas in the first gas tank 3, and the first gas tank 3 returns to the initial standby state.

[0042] A connecting pipe is provided between the second gas tank 4 and the third gas tank 15, and one end of this connecting pipe is simultaneously connected to multiple sets of third gas tanks 15 at equal intervals.

[0043] Additionally, it should be noted that as the first spring 17 moves down in the second gas tank 4, the gas in the second gas tank 4 is discharged along the connecting pipe. The discharged gas simultaneously reaches multiple sets of third gas tanks 15. The gas compresses and pushes the push column 16 forward, while the second spring 18 is compressed and retracted.

[0044] In practice, the second gas tank 4 stores gas; a sealing ring is provided between the push column 16 and the purification furnace body 1, and sealing rings are provided at the contact points between the surface of the bidirectional piston rod 14 and the first gas tank 3 and the second gas tank 4, respectively.

[0045] Additionally, it should be noted that, as Figure 10 As shown, the second gas tank 4 initially stores gas. After being pushed by the bidirectional piston rod 14, half of the gas inside enters multiple sets of third gas tanks 15, pushing multiple sets of push columns 16 forward to contact the fixed rod 8 and balance the weight of multiple sets of graphene bodies 9. As the weight of the graphene body 9 gradually decreases, it gradually moves forward, pushing the limiting slider 11 and the connecting column 10 to move. By dynamically adjusting the contact area between the graphene body 9 and the limiting bead 12, the part that was originally blocked is exposed to the reaction gas, thereby achieving uniform etching and volatilization of the entire surface and improving the uniformity of purification.

[0046] In specific implementation, the top of the placement rack 5 is symmetrically and movably provided with an arc-shaped groove, and a limiting slider 11 is movably inserted in the arc-shaped groove, and a connecting column 10 is hinged on both sides of the limiting slider 11. In addition, it should be noted that limiting the direction of movement of the limiting slider 11 and the connecting column 10 allows the support column 7 and the connecting column 10 to smoothly hinge and displace, and also allows each component to smoothly reset, which facilitates subsequent repeated use and improves the stability of the device.

[0047] A fixed rod 8 is fixedly connected to one side of the limiting slider 11, and multiple sets of fixed rods 8 are evenly distributed.

[0048] In addition, it should be noted that the same set of fixed rods 8 are connected to multiple sets of limiting sliders 11 at the same time. By pushing the fixed rods 8, multiple sets of limiting sliders 11 can be pushed, thereby realizing adaptive movement and adjustment of the contact ends of multiple sets of graphene bodies 9. Dynamic contact reduces the heat transfer barrier caused by the fixed contact surface, which is conducive to the uniform distribution of heat on the surface of graphene body 9, reduces local temperature difference, and promotes overall process stability.

[0049] In practice, the support column 7 and the connecting column 10 are symmetrically hinged at equal intervals at the top of the placement frame 5, and the inner ends of the support column 7 and the connecting column 10 are respectively symmetrically hinged with connecting rods 13. Additionally, it should be noted that one end of the support column 7 is hinged to the top of the placement frame 5. The connecting column 10, which is hinged to the support column 7, bears the force of the graphene body 9 and is balanced by multiple sets of second springs 18 and first springs 17. When the weight of the graphene body 9 is reduced, the force is no longer balanced, and the connecting column 10 is pushed to drive the support column 7, which is hinged to it, to rotate at the same time. The hinge position changes. The support column 7 and the connecting column 10 are symmetrically arranged on both sides of the limiting ball 12 and the connecting rod 13. By continuously adjusting the posture of the support column 7 and the connecting column 10, the contact point between the limiting ball 12 and the graphene body 9 is changed, and the reaction gas can circulate to the back and edge areas that were originally difficult to reach, eliminating purification dead zones.

[0050] A limiting ball 12 is rotatably inserted in the middle of the symmetrically distributed connecting rod 13, and a graphene body 9 is movably placed in the middle of the limiting ball 12.

[0051] Additionally, it should be noted that as the hinge angle of the support column 7 and the connecting column 10 changes, the limiting ball 12 and the connecting rod 13 continuously shift towards the center. This causes the contact point between the limiting ball 12 and the graphene substrate 9 to continuously change, preventing stress accumulation in the fixed contact area due to mismatched coefficients of thermal expansion. This reduces irreversible structural defects such as wrinkles and cracks, thus improving the integrity of the film. In practice, the graphene main body 9 is symmetrically arranged at equal intervals above the placement frame 5; In addition, it should be noted that the design of multiple graphene bodies 9 makes the push column 16 more sensitive to weight, and can respond more quickly and accurately. By using the real-time weight changes during the purification process to drive the adjustment of the contact state, a self-feedback and adaptive purification mechanism is formed, which does not require complex external control and is simple and efficient.

[0052] The four corners of the top and bottom of the multiple graphene bodies 9 are in contact with the limiting beads 12.

[0053] Furthermore, it should be noted that multiple sets of limiting beads 12 are always distributed in a point-like manner at the four corners of the top and bottom of the graphene body 9. The limiting beads 12 allow the graphene body 9 to be stably positioned within the purification furnace body 1. The limiting beads 12 roll on the surface of the graphene body 9, allowing for smoother and faster movement, reducing resistance during displacement, and continuously changing the contact points with it. This ensures uniform purification of the graphene body 9, effectively reducing impurity residues and structural defects. Consequently, the electrical, mechanical, and thermal properties of the graphene film are more consistent and superior, making it suitable for the fabrication of high-performance devices. In a specific implementation, a first spring 17 is wound around the surface of the bidirectional piston rod 14, and the two ends of the first spring 17 are fixed to the inner wall of the second gas tank 4 and the surface of the bidirectional piston rod 14, respectively; a second spring 18 is wound around the surface of the push column 16, and the two ends of the second spring 18 are fixed to the inner wall of the third gas tank 15 and the surface of the push column 16, respectively.

[0054] In addition, it should be noted that the first spring 17 and the second spring 18 utilize their elasticity to help expel the gas and generate force, and also help the gas return to its original position after use. At the same time, the force generated by the first spring 17 and the second spring 18 is always adapted to the weight of the graphene body 9. When the weight of the graphene body 9 is reduced, it can be sensed and the gas is pushed down accordingly. The graphene body 9 is adapted to continuously reducing its weight. As the weight of the graphene body 9 is reduced, the pushing column 16 will push the fixing rod 8 and the limiting slider 11 to change the contact surface between the limiting ball 12 and the graphene body 9. By dynamically adjusting the contact surface with the graphene body 9, the problems of shielding, stress, heat transfer and contamination accumulation in the high-temperature purification process are solved, and efficient, uniform and non-destructive purification of graphene film is achieved.

[0055] Working principle: When using this vertical high-temperature purification furnace for graphene purification, first take out the placement rack 5. The graphene body 9 to be purified is placed from the left and right sides of the placement rack 5 into the middle limit of the limiting ball 12. Then, place the placement rack 5 into the bottom of the purification furnace body 1 along the square slide rail 6 and start the vacuum system to evacuate the purification furnace body 1 to a high vacuum state to isolate oxygen and form a reaction environment. Then, under the protection of inert gas, start the heating system to raise the temperature of the graphite heating element. Different gases are added at different temperature levels to react with the graphene body 9 for purification.

[0056] After the placement rack 5 and the graphene body 9 are placed in the purification furnace body 1, the graphene body 9 is placed at equal intervals in the middle of multiple sets of limiting beads 12. In the initial state, the weight of the graphene body 9 is pressed down by the hinged support column 7 and connecting column 10. At this time, the connecting column 10 and the support column 7 push the limiting slider 11 to slide to the bottom in the arc groove.

[0057] When the temperature in the main body 1 of the purification furnace reaches a low temperature, the corresponding gas is added. Part of the gas enters the first gas tank 3 through the connecting pipe of the gas flow pipe 2. The flow valve controls the amount of gas entering, such as... Figure 10 and Figure 11 As shown, gas enters to half the capacity of the first gas tank 3, pushing the bidirectional piston rod 14 downward. At this time, the first spring 17 is stretched by force, and the bidirectional piston rod 14 moves downward in the second gas tank 4, pushing the gas in the second gas tank 4 to be transported to multiple sets of third gas tanks 15. Thus, the push column 16 is pushed by the gas to extend into the airflow pipe 2. The position of the multiple sets of push columns 16 at this time is exactly in contact with the fixed rod 8. The force of the multiple sets of second springs 18 and first springs 17 is similar to the weight of the corresponding multiple sets of graphene bodies 9, which can push the column 16 to contact the fixed rod 8 but not push it to move.

[0058] As the temperature inside the purification furnace body 1 gradually rises to medium and high temperatures, the second gas enters the purification furnace body 1. At this time, impurities in the graphene body 9 are continuously reduced and carried away by the gas, and the weight of multiple graphene bodies 9 is reduced together, such as... Figure 11 As shown, at this time, the forces between the multiple sets of second springs 18, first spring 17, and fixed rod 8 are no longer balanced. First spring 17 will continue to push bidirectional piston rod 14 downward. As the weight of graphene body 9 decreases, the remaining gas in second gas tank 4 is pushed by bidirectional piston rod 14 and first spring 17 to third gas tank 15. The gas in third gas tank 15 compresses and pushes push column 16 and second spring 18, thereby pushing column 16 to gradually move into purification furnace body 1 and push fixed rod 8 to displacement.

[0059] When the fixing rod 8 is pushed, it simultaneously pushes the two sets of limiting sliders 11 to move in the arc-shaped groove. The limiting sliders 11 push the hinged connecting column 10 to deform and move, so that the hinge angle of the supporting column 7 and the connecting column 10 changes according to the weight of the graphene body 9. The supporting column 7 and the connecting column 10 push multiple sets of connecting rods 13 upwards and move them to the center at the same time. The movement of the connecting rods 13 drives the limiting beads 12 to gradually move to the center at the top and bottom of the multiple sets of graphene bodies 9. As the temperature and gas continue to rise and enter, the limiting beads 12 on the surface of the graphene body 9 roll continuously to the center. The contact surface between the graphene body 9 and the limiting beads 12 moves continuously, and the gas can fully react and contact with the graphene body 9.

[0060] After the reaction is complete, heating and gas supply are stopped, and the graphene body 9 is allowed to cool slowly to room temperature under a controlled atmosphere, thus completing one purification cycle. The flow valve above the first gas tank 3 discharges the gas from the first gas tank 3, allowing the gas to return to the gas flow pipe 2. Then, the first spring 17 rebounds and pushes the bidirectional piston rod 14 to reset, pushing the gas in the column 16 back to the second gas tank 4. The column 16 and the second spring 18 are pushed back to the third gas tank 15, pushing the column 16 away from the placement rack 5, and no longer pushing the fixing rod 8 and the limiting slider 11. Finally, the purification furnace body 1 is opened, the placement rack 5 is pulled up, and the high-purity graphene body 9 is taken out.

[0061] Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A vertical high-temperature purification furnace for graphene purification, comprising a purification furnace body (1), an airflow pipe (2) connected to the surface of the purification furnace body (1), and a graphene body (9) placed in the purification furnace body (1), characterized in that, Also includes: A sliding rack (5) is installed in the purification furnace body (1) for placing the graphene body (9). The support column (7) and connecting column (10) are hinged to the top of the placement frame (5) and are pushed based on the weight of the graphene body (9) to adapt to deformation. Equally spaced hinged inner sides of support column (7) and connecting column (10) with the contact point with graphene changing with their displacement; A first gas tank (3) is fixed on the outside of the purification furnace body (1) and connected to the gas flow pipe (2) to temporarily store gas; A second gas tank (4) is fixed on the outside of the main body (1) of the purification furnace for receiving and storing gas. Simultaneously, a bidirectional piston rod (14) is inserted in the first gas tank (3) and the second gas tank (4) and is thrusted by the change in the amount of gas. A push column (16) is inserted at equal intervals on one side of the purification furnace body (1) to push the graphene body (9) and the connecting column (10) to deform according to the gas thrust.

2. The vertical high-temperature purification furnace for graphene purification according to claim 1, characterized in that: The inner wall of the purification furnace body (1) is fixed with square slide rails (6) at equal angles, and slide rods are slidably inserted in the square slide rails (6), and the slide rods are distributed at equal angles on the surface of the placement rack (5). The placement rack (5) is distributed in an "S" shape with equal intervals, and airflow holes are opened at equal intervals on the surface of the placement rack (5).

3. The vertical high-temperature purification furnace for graphene purification according to claim 1, characterized in that: A third gas tank (15) is fixedly connected to one side of the purification furnace body (1) at equal intervals, and a push column (16) is movably inserted into the third gas tank (15). One end of the push column (16) moves through the third gas tank (15) and extends into the purification furnace body (1) to contact the limiting slider (11).

4. The vertical high-temperature purification furnace for graphene purification according to claim 1, characterized in that: The airflow pipe (2) is provided in multiple sets, and the top of the purification furnace body (1) is connected to multiple sets of airflow pipes (2), and the bottom of the purification furnace body (1) is connected to an airflow pipe (2). A rotating flange is installed at the connection between the airflow pipe (2) and the purification furnace body (1), and the two are connected by the rotating flange.

5. The vertical high-temperature purification furnace for graphene purification according to claim 1, characterized in that: The first gas tank (3) and the gas flow pipe (2) are symmetrically connected by a connecting pipe, and a flow valve is installed on the surface of the connecting pipe above the gas flow pipe (2); A connecting pipe is provided between the second gas tank (4) and the third gas tank (15), and one end of the connecting pipe is simultaneously connected to multiple sets of third gas tanks (15) at equal intervals.

6. The vertical high-temperature purification furnace for graphene purification according to claim 1, characterized in that: The second gas container (4) contains gas; A sealing ring is provided between the push column (16) and the purification furnace body (1), and a sealing ring is provided at the contact points between the surface of the bidirectional piston rod (14) and the first gas tank (3) and the second gas tank (4).

7. A vertical high-temperature purification furnace for graphene purification according to claim 1, characterized in that: The top of the placement rack (5) is symmetrically and movably provided with an arc-shaped groove, and a limiting slider (11) is movably inserted in the arc-shaped groove, and a connecting column (10) is hinged on both sides of the limiting slider (11). One side of the limiting slider (11) is fixedly connected to a fixing rod (8), and multiple sets of fixing rods (8) are evenly distributed.

8. The vertical high-temperature purification furnace for graphene purification according to claim 1, characterized in that: The support column (7) and the connecting column (10) are symmetrically hinged at equal intervals to the top of the placement frame (5), and a connecting rod (13) is symmetrically hinged to one end of the inner side of the support column (7) and the connecting column (10). A limiting bead (12) is rotatably inserted in the middle of the symmetrically distributed connecting rod (13), and a graphene body (9) is movably placed in the middle of the limiting bead (12).

9. A vertical high-temperature purification furnace for graphene purification according to claim 1, characterized in that: The graphene bodies (9) are symmetrically arranged at equal intervals above the placement rack (5); The four corners of the top and bottom ends of the multiple graphene bodies (9) are in contact with the limiting beads (12).

10. A vertical high-temperature purification furnace for graphene purification according to claim 1, characterized in that: The surface of the bidirectional piston rod (14) is wound with a first spring (17), and the two ends of the first spring (17) are fixed to the inner wall of the second gas tank (4) and the surface of the bidirectional piston rod (14), respectively. The surface of the push column (16) is wound with a second spring (18), and the two ends of the second spring (18) are fixed to the inner wall of the third gas tank (15) and the surface of the push column (16), respectively.

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