Light Emitting Diodes and Light Emitting Devices

Abstract

This invention relates to the field of semiconductor manufacturing technology, and particularly to a light-emitting diode (LED), comprising at least two semiconductor stacks. Each semiconductor stack includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer, arranged sequentially. A first contact electrode is disposed on the first semiconductor layer, and a second contact electrode is disposed on the second semiconductor layer. An insulating layer covers the semiconductor stacks, the first contact electrode, and the second contact electrode, and has a first opening and a second opening. A bridging electrode is disposed on the insulating layer to electrically connect two adjacent semiconductor stacks. An insulating protective layer covers the bridging electrode and the insulating layer. Viewed from above, the bridging electrode located between two adjacent semiconductor stacks has a first dimension, and the side dimension of the semiconductor stack has a second dimension. The first dimension is greater than one-third of the second dimension. This design solves the problem of easy burnout of the bridging electrode in existing LEDs, improving the reliability and quality of the LED.

Description

Light-emitting diode and light-emitting device Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a light emitting diode and a light emitting device. Background Art

[0002] A light-emitting diode (LED) is a semiconductor light-emitting element typically made from semiconductor processes such as GaN, GaAs, GaP, and GaAsP. Its core is a PN junction, which is responsible for the light-emitting properties of the diode. LEDs offer advantages such as high luminous intensity, high efficiency, compact size, and long life, making them considered one of the most promising light sources. They are widely used in lighting, surveillance and control, high-definition broadcasting, high-end cinemas, office displays, interactive conferences, and virtual reality.

[0003] Currently, the existing FCHV LED (flip-chip high-voltage LED) structure, due to the design of the CBL layer (current blocking layer) that must cross the bridge electrode, results in low forward voltage and dimming phenomenon in low current scenarios (such as less than or equal to 10μA). Specifically, within the same chip, the brightness of some light-emitting units is low, resulting in uneven light emission. Furthermore, when the bridge electrode is narrow, especially on the slope of the bridge isolation trench, the electrode layer has weak coverage due to the height difference of the step, which makes it prone to bridge electrode burnout at the bridge isolation trench. Therefore, how to overcome these technical difficulties has become a pressing issue in this field.

[0004] It should be noted that the information disclosed in this background technology section is only intended to increase understanding of the overall background of the present invention, and should not be regarded as an admission or any form of implication that the information constitutes prior art already known to those skilled in the art. Technical Solutions

[0005] The present invention provides a light emitting diode, which comprises at least two semiconductor stacks, a first contact electrode, a second contact electrode, an insulating layer, a bridge electrode and an insulating protection layer.

[0006] Each semiconductor stack includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer, wherein the light-emitting layer is located between the first semiconductor layer and the second semiconductor layer. A first contact electrode is disposed on the first semiconductor layer and electrically connected to the first semiconductor layer. A second contact electrode is disposed on the second semiconductor layer and electrically connected to the second semiconductor layer. An insulating layer covers the semiconductor stack, the first contact electrode, and the second contact electrode, and has a first opening and a second opening. A bridging electrode is disposed on the insulating layer, and electrically connects two adjacent semiconductor stacks through the first opening and the second opening. An insulating protective layer covers the bridging electrode and the insulating layer. Looking down at the semiconductor stack from above the light-emitting diode, the size of the bridging electrode located between the two adjacent semiconductor stacks is a first size, the size of the opposite side edges between the two adjacent semiconductor stacks is a second size, and the first size is greater than 1 / 3 of the second size.

[0007] The present invention also provides a light emitting diode, which includes at least two semiconductor stacks, a first contact electrode, a second contact electrode, an insulating layer, a bridge electrode and an insulating protection layer.

[0008] Each semiconductor stack includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer, and the light-emitting layer is located between the first semiconductor layer and the second semiconductor layer. The first contact electrode is arranged on the first semiconductor layer and is electrically connected to the first semiconductor layer. The second contact electrode is arranged on the second semiconductor layer and is electrically connected to the second semiconductor layer. The insulating layer covers the semiconductor stack, the first contact electrode and the second contact electrode, and has a first opening and a second opening. The bridging electrode is arranged on the insulating layer, and electrically connects the two adjacent semiconductor stacks through the first opening and the second opening. The insulating protective layer covers the bridging electrode and the insulating layer. Wherein, looking down from the top of the light-emitting diode toward the semiconductor stack, the opposite side edges between the two adjacent semiconductor stacks are located below the bridging electrode, and at least 1 / 3 of the length of the side edges are located below the bridging electrode.

[0009] The present invention also provides a light emitting diode, which includes at least two semiconductor stacks, a first contact electrode, a second contact electrode, an insulating layer, a bridge electrode and an insulating protection layer.

[0010] Each semiconductor stack is isolated from each other by an isolation trench. Each semiconductor stack includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer, with the light-emitting layer located between the first and second semiconductor layers. A first contact electrode is disposed on the first semiconductor layer and electrically connected to the first semiconductor layer. A second contact electrode is disposed on the second semiconductor layer and electrically connected to the second semiconductor layer. An insulating layer covers the semiconductor stack, the first contact electrode, and the second contact electrode and has a first opening and a second opening. A bridge electrode is disposed on the insulating layer and electrically connects two adjacent semiconductor stacks through the first opening and the second opening. An insulating protective layer covers the bridge electrode and the insulating layer. The isolation trench includes a first isolation trench and a second isolation trench, the first isolation trench connecting to the second isolation trench. When viewed from above the light-emitting diode toward the semiconductor stack, the first isolation trench is located within the region where the bridge electrode is located, and the second isolation trench is located outside the region where the bridge electrode is located. The ratio of the area of ​​the first isolation trench to the area of ​​the second isolation trench is ≥ 1:2.

[0011] The present invention also provides a light-emitting device, which uses the light-emitting diode provided by any of the above embodiments.

[0012] An embodiment of the present invention provides a light-emitting diode and a light-emitting device. By providing an insulating layer, a bridging electrode, and an insulating protective layer in a DBR structure, the bridging electrode can be formed over a large area on the DBR structure. This can solve the problem of easy burning of the bridging electrode in existing light-emitting diodes and improve the reliability and quality of the light-emitting diodes.

[0013] Other features and beneficial effects of the present invention will be described in the following description, and some of the technical features and beneficial effects can be obviously derived from the description or understood by practicing the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, a brief introduction is given below to the drawings required for use in the embodiments or the description of the prior art. Obviously, some of the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0015] FIG1 is a schematic top view of a light emitting diode according to an embodiment of the present invention;

[0016] FIG2 is a schematic longitudinal sectional view taken along the section line AA of FIG1 ;

[0017] FIG3 is a partial enlarged schematic diagram of the M area in FIG2 ;

[0018] FIG4 is a schematic longitudinal sectional view taken along the section line BB of FIG1 ;

[0019] FIG5 is a schematic diagram of a top view of a conventional light emitting diode;

[0020] 6 to 13 are schematic diagrams of various structures of the light emitting diode shown in FIG1 ;

[0021] 14 is a schematic structural diagram of a light emitting diode provided in a second embodiment of the present invention;

[0022] 15 is a schematic structural diagram of a light emitting diode provided in a third embodiment of the present invention;

[0023] 16 is a schematic structural diagram of a light emitting diode provided in a fourth embodiment of the present invention;

[0024] FIG17 is a schematic structural diagram of a light emitting diode provided in a fifth embodiment of the present invention.

[0025] Reference numerals:

[0026] 10-substrate; 12-semiconductor stack; 121-first semiconductor layer; 122-light-emitting layer; 123-second semiconductor layer; 126-side; 14-first contact electrode; 16-second contact electrode; 18-insulating layer; 181-first opening; 182-second opening; 20-bridging electrode; 205-fifth opening; 22-insulating protection layer; 223-third opening; 224-fourth opening; 24-transparent conductive layer; 26-current blocking layer; 28-first soldering pad; 30-second soldering pad; 32-island structure; 41-first isolation trench; 42-second isolation trench; X-length direction of the light-emitting diode; L1-length of the bridging electrode (first dimension); L2-length of the semiconductor stack (second dimension). Modes for Carrying Out the Invention

[0027] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments; the technical features designed in different implementation modes of the present invention described below can be combined with each other as long as they do not conflict with each other; based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0028] In the description of the present invention, it should be understood that the terms "center", "lateral", "up", "down", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "multiple" means two or more. In addition, the term "including" and any variations thereof all mean "at least including".

[0029] The present invention provides a light-emitting diode, comprising at least two semiconductor stacks, a first contact electrode, a second contact electrode, an insulating layer, a bridging electrode, and an insulating protective layer. Each semiconductor stack comprises a first semiconductor layer, a light-emitting layer, and a second semiconductor layer, with the light-emitting layer being located between the first semiconductor layer and the second semiconductor layer. The first contact electrode is disposed on the first semiconductor layer and electrically connected to the first semiconductor layer. The second contact electrode is disposed on the second semiconductor layer and electrically connected to the second semiconductor layer. The insulating layer covers the semiconductor stacks, the first contact electrode, and the second contact electrode, and has a first opening and a second opening. The bridging electrode is disposed on the insulating layer and electrically connects two adjacent semiconductor stacks via the first opening and the second opening. The insulating protective layer covers the bridging electrode and the insulating layer. When viewed from above the light-emitting diode toward the semiconductor stacks, the bridging electrode located between the two adjacent semiconductor stacks has a first dimension, and the dimensions of the opposing sides between the two adjacent semiconductor stacks have a second dimension, wherein the first dimension is greater than one-third of the second dimension. Compared with the traditional narrow bridging electrode, the bridging electrode of the present invention is large-sized (the first size is larger than 1 / 3 of the second size), which can effectively avoid current congestion and the burning of the bridging electrode.

[0030] In some embodiments, the first dimension is parallel to the second dimension. In some embodiments, the side edge is at least partially located below the bridging electrode. This allows the bridging electrode to span the bridge over a large dimension (i.e., the first dimension is greater than 1 / 3 of the second dimension), effectively preventing current congestion and the possibility of burning the bridging electrode.

[0031] In some embodiments, at least one-third of the side edge is located below the bridging electrode. For example, for a 90nm side edge, at least 30nm of it is located below the bridging electrode, which can prevent current congestion and burnout of the bridging electrode.

[0032] In some embodiments, the light-emitting diode also includes a transparent conductive layer and a current blocking layer. The transparent conductive layer is located between the second contact electrode and the second semiconductor layer, and the current blocking layer is located between the transparent conductive layer and the second semiconductor layer. By setting the transparent conductive layer and the current blocking layer, the current diffusion performance of the light-emitting diode is further improved.

[0033] In some embodiments, when viewed from above the LED toward the semiconductor stack, the single current-blocking layer is located only on a single semiconductor stack. This means the current-blocking layer no longer bridges adjacent semiconductor stacks, as is common in conventional LEDs. This prevents unstable and low LED turn-on voltage, particularly in low-current applications (e.g., ≤10μA).

[0034] In some embodiments, when viewed from above the LED toward the semiconductor stack, the area of ​​a single current-blocking layer accounts for less than or equal to 4% of the area of ​​the semiconductor stack in which it resides. This further prevents the LED's turn-on voltage from being unstable and too low, while also reducing the area of ​​the current-blocking layer and increasing the area of ​​the light-emitting region.

[0035] In some embodiments, when viewed from above the LED toward the semiconductor stack, the sum of the areas of the current blocking layers on a single semiconductor stack and the area of ​​the semiconductor stack on which it resides is less than or equal to 10%. This further prevents the LED's turn-on voltage from being unstable and too low, while also reducing the area of ​​the current blocking layer and increasing the area of ​​the light-emitting region.

[0036] In some embodiments, the LED has an island structure located in the center of the LED. When viewed from above the LED toward the semiconductor stack, the bridge electrode has a fifth opening at the island structure. This island structure prevents the LED from being broken by a pin, potentially damaging the LED.

[0037] In some embodiments, when viewed from above the light-emitting diode toward the semiconductor stack, the semiconductor stack is defined as a first semiconductor stack, a second semiconductor stack, and a third semiconductor stack along the length of the light-emitting diode. The areas of the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are the same. By making the areas of the light-emitting units the same, the current density of each semiconductor stack can be made the same, resulting in uniform light emission.

[0038] In some embodiments, the light-emitting diode further includes a first solder pad and a second solder pad, and the insulating protective layer has a third opening and a fourth opening. The first solder pad is disposed on the insulating protective layer and connected to the bridge electrode through the third opening. The second solder pad is disposed on the insulating protective layer and connected to the bridge electrode through the fourth opening. The provision of the solder pad electrodes allows conduction of external current, facilitating installation and use.

[0039] In some embodiments, the insulating protective layer has a single-layer structure or a multi-layer structure. For example, a single-layer SiO2 layer, a multi-layer structure of SiO2 + silicon nitride, a multi-layer structure of Al2O3 + SiO2, or a multi-layer structure of Al2O3 + SiO2 + silicon nitride, etc., can be adaptively selected according to specific needs to enhance the effectiveness of the insulating protective layer. In some embodiments, the material of the insulating protective layer may include at least one of silicon oxide, silicon nitride, and aluminum oxide.

[0040] In some embodiments, the insulating layer includes a DBR structure, and the thickness of the insulating layer is greater than 1 μm. The DBR structure, the bridging electrode, and the insulating protective layer enable the bridging electrode to be formed over a large area on the DBR structure, thereby resolving the dimming and burning issues of existing LEDs and improving the reliability and quality of the LEDs.

[0041] In some embodiments, a DBR structure is formed by alternating a first sublayer and a second sublayer, each having different refractive indices. In some embodiments, the DBR structure is formed by alternating M SiO2 layers and N TiO2 layers, where M and N are positive integers, where M and N are ≥ 2. For example, a periodic thin film composed of alternating high-refractive-index and low-refractive-index materials can enhance the optical performance of the DBR structure.

[0042] In some embodiments, the thickness of the first sublayer is greater than that of the second sublayer, and the thickness of the first sublayer is at least 1.5 times the thickness of the second sublayer. In some embodiments, among the multiple first sublayers, the first sublayer closest to the semiconductor stack has the greatest thickness, and the thickness of the thickest first sublayer is greater than 400 nm. This enables total internal reflection at large angles, improving the overall reflection effect.

[0043] In some embodiments, the material of the current blocking layer includes at least one of silicon oxide, silicon nitride, silicon oxynitride, titanium oxide, or aluminum oxide, and the thickness of the current blocking layer is 200 nm to 400 nm to enhance the blocking performance of the current blocking layer.

[0044] In some embodiments, the bridge electrode area accounts for 60% to 95% of the LED when viewed from above the LED toward the semiconductor stack. By increasing the bridge electrode area ratio, the bridge electrode and the DBR structure form an ODR structure, further enhancing the light extraction performance of the LED and preventing burnout due to an undersized bridge electrode.

[0045] The present invention also provides a light-emitting diode (LED), comprising at least two semiconductor stacks, a first contact electrode, a second contact electrode, an insulating layer, a bridging electrode, and an insulating protective layer. Each semiconductor stack comprises a first semiconductor layer, a light-emitting layer, and a second semiconductor layer, with the light-emitting layer located between the first and second semiconductor layers. The first contact electrode is disposed on the first semiconductor layer and electrically connected to the first semiconductor layer. The second contact electrode is disposed on the second semiconductor layer and electrically connected to the second semiconductor layer. The insulating layer covers the semiconductor stacks, the first and second contact electrodes, and has a first opening and a second opening. The bridging electrode is disposed on the insulating layer and electrically connects two adjacent semiconductor stacks via the first and second openings. The insulating protective layer covers the bridging electrode and the insulating layer. When viewed from above the LED toward the semiconductor stacks, the opposing sides of the two adjacent semiconductor stacks are located below the bridging electrode, and at least one-third of the length of the side is located below the bridging electrode. This prevents current congestion and the burning of the bridging electrode.

[0046] In some embodiments, the bridge electrode between two adjacent semiconductor stacks has a first dimension, and the opposite side between the two adjacent semiconductor stacks has a second dimension. The first dimension is parallel to the second dimension, and the first dimension is greater than 1 / 3 of the second dimension. This allows the bridge electrode to span a large length (i.e., the first dimension is greater than 1 / 3 of the second dimension), effectively preventing current congestion and the possibility of burning the bridge electrode.

[0047] In some embodiments, the light-emitting diode also includes a transparent conductive layer and a current blocking layer. The transparent conductive layer is located between the second contact electrode and the second semiconductor layer, and the current blocking layer is located between the transparent conductive layer and the second semiconductor layer. By setting the transparent conductive layer and the current blocking layer, the current diffusion performance of the light-emitting diode is further improved.

[0048] In some embodiments, when viewed from above the LED toward the semiconductor stack, the single current-blocking layer is located only on a single semiconductor stack. This means the current-blocking layer no longer bridges adjacent semiconductor stacks, as is common in conventional LEDs. This prevents unstable and low LED turn-on voltage, particularly in low-current applications (e.g., ≤10μA).

[0049] In some embodiments, when viewed from above the LED toward the semiconductor stack, the area of ​​a single current-blocking layer accounts for less than or equal to 4% of the area of ​​the semiconductor stack in which it resides. This further prevents the LED's turn-on voltage from being unstable and too low, while also reducing the area of ​​the current-blocking layer and increasing the area of ​​the light-emitting region.

[0050] In some embodiments, when viewed from above the LED toward the semiconductor stack, the sum of the areas of the current blocking layers on a single semiconductor stack and the area of ​​the semiconductor stack on which it resides is less than or equal to 10%. This further prevents the LED's turn-on voltage from being unstable and too low, while also reducing the area of ​​the current blocking layer and increasing the area of ​​the light-emitting region.

[0051] In some embodiments, the bridge electrode area accounts for 60% to 95% of the LED when viewed from above the LED toward the semiconductor stack. By increasing the bridge electrode area ratio, the bridge electrode and the DBR structure form an ODR structure, further enhancing the light extraction performance of the LED and preventing burnout due to an undersized bridge electrode.

[0052] In some embodiments, the insulating protective layer is a single-layer structure or a multi-layer structure. For example, a single-layer SiO2 layer, a multi-layer structure of SiO2 + silicon nitride, a multi-layer structure of Al2O3 + SiO2, or a multi-layer structure of Al2O3 + SiO2 + silicon nitride, etc., can be adaptively selected according to specific needs to enhance the effectiveness of the insulating protective layer.

[0053] The present invention also provides a light-emitting diode (LED), comprising at least two semiconductor stacks, a first contact electrode, a second contact electrode, an insulating layer, a bridge electrode, and an insulating protective layer. The semiconductor stacks are isolated from each other by isolation trenches. Each semiconductor stack includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer, with the light-emitting layer located between the first and second semiconductor layers. The first contact electrode is disposed on the first semiconductor layer and electrically connected to the first semiconductor layer. The second contact electrode is disposed on the second semiconductor layer and electrically connected to the second semiconductor layer. The insulating layer covers the semiconductor stacks, the first contact electrode, and the second contact electrode, and has a first opening and a second opening. The bridge electrode is disposed on the insulating layer and electrically connects two adjacent semiconductor stacks through the first opening and the second opening. The insulating protective layer covers the bridge electrode and the insulating layer. The isolation trenches include a first isolation trench and a second isolation trench, the first isolation trench connecting to the second isolation trench. When viewed from above the LED toward the semiconductor stacks, the first isolation trench is located within the region where the bridge electrode is located, while the second isolation trench is located outside the region where the bridge electrode is located. The ratio of the area of ​​the first isolation trench to the area of ​​the second isolation trench is ≥ 1:2. The bridge electrode of the present invention is large-sized and bridged, which can effectively avoid current congestion and the burning of the bridge electrode.

[0054] In some embodiments, when looking down at the semiconductor stack from above the light-emitting diode, the first isolation trench overlaps with the bridging electrode to further avoid current congestion and the burning of the bridging electrode.

[0055] In some embodiments, the light-emitting diode also includes a transparent conductive layer and a current blocking layer. The transparent conductive layer is located between the second contact electrode and the second semiconductor layer, and the current blocking layer is located between the transparent conductive layer and the second semiconductor layer. By setting the transparent conductive layer and the current blocking layer, the current diffusion performance of the light-emitting diode is further improved.

[0056] In some embodiments, when viewed from above the LED toward the semiconductor stack, the single current-blocking layer is located only on a single semiconductor stack. This means the current-blocking layer no longer bridges adjacent semiconductor stacks, as in conventional LEDs. This prevents unstable and low LED turn-on voltage, particularly in low-current applications (e.g., ≤10μA).

[0057] In some embodiments, when viewed from above the LED toward the semiconductor stack, the area of ​​a single current-blocking layer accounts for less than or equal to 4% of the area of ​​the semiconductor stack in which it resides. This further prevents the LED's turn-on voltage from being unstable and too low, while also reducing the area of ​​the current-blocking layer and increasing the area of ​​the light-emitting region.

[0058] In some embodiments, the LED has an island structure located in the center of the LED. When viewed from above the LED toward the semiconductor stack, the bridge electrode has a fifth opening at the island structure. This island structure prevents the LED from being broken by a pin, potentially damaging the LED.

[0059] The present invention also provides a light-emitting device, which uses the light-emitting diode provided by any of the above embodiments.

[0060] Please refer to Figures 1 to 4. Figure 1 is a schematic top view of a light-emitting diode according to one embodiment of the present invention. Figure 2 is a schematic longitudinal cross-sectional view taken along line AA in Figure 1. Figure 3 is a partially enlarged schematic view of region M in Figure 2. Figure 4 is a schematic longitudinal cross-sectional view taken along line BB in Figure 1. To achieve at least one of the aforementioned advantages or other advantages, one embodiment of the present invention provides a light-emitting diode. As shown in the figures, the light-emitting diode may include at least two semiconductor stacks 12, a first contact electrode 14, a second contact electrode 16, an insulating layer 18, a bridge electrode 20, and an insulating protective layer 22.

[0061] In the illustrated embodiment, the number of semiconductor stacks 12 is 6, which are arranged in 2 rows with 3 semiconductors in each row. However, the present invention is not limited to this. The specific number and arrangement position of the semiconductor stacks 12 can be adjusted and changed according to actual needs.

[0062] The semiconductor stack 12 can be disposed on a substrate 10. The substrate 10 can be an insulating substrate. Preferably, the substrate 10 can be made of a transparent or translucent material. In the illustrated embodiment, the substrate 10 is a sapphire substrate. In some embodiments, the substrate 10 can be a patterned sapphire substrate, but the present invention is not limited thereto. The substrate 10 can also be made of a conductive material or a semiconductor material. For example, the substrate 10 material can include at least one of silicon carbide, silicon, magnesium aluminum oxide, magnesium oxide, lithium aluminum oxide, aluminum gallium oxide, and gallium nitride.

[0063] Each semiconductor stack 12 includes a first semiconductor layer 121, a light emitting layer 122, and a second semiconductor layer 123. The light emitting layer 122 is located between the first semiconductor layer 121 and the second semiconductor layer 123. In some embodiments, the semiconductor stack 12 includes the first semiconductor layer 121, the light emitting layer 122, and the second semiconductor layer 123 on the substrate 10 in this order.

[0064] The first semiconductor layer 121 may be an N-type semiconductor layer that can provide electrons to the light-emitting layer 122 under the action of a power source. In some embodiments, the first semiconductor layer 121 includes an N-type doped nitride layer. The N-type doped nitride layer may include N-type impurities. The N-type impurities may include one or a combination of Si, Ge, and Sn.

[0065] The light-emitting layer 122 may be a quantum well structure (Quantum Well, abbreviated as QW). In some embodiments, the light-emitting layer 122 may also be a multiple quantum well structure (Multiple Quantum Well, abbreviated as MQW), wherein the multiple quantum well structure includes multiple quantum well layers (Well) and multiple quantum barrier layers (Barrier) alternately arranged in a repeated manner, for example, it may be a multiple quantum well structure of GaN / AlGaN, InAlGaN / InAlGaN or InGaN / AlGaN. In addition, the composition and thickness of the well layer in the light-emitting layer 122 determine the wavelength of the generated light. In order to improve the luminous efficiency of the light-emitting layer 122, it can be achieved by changing the depth of the quantum well, the number of layers, thickness and / or other characteristics of the paired quantum wells and quantum barriers in the light-emitting layer 122.

[0066] The second semiconductor layer 123 can be a P-type semiconductor layer, which can provide holes to the light-emitting layer 122 under the action of a power supply. In some embodiments, the second semiconductor layer 123 includes a P-type doped nitride layer. The P-type doped nitride layer may include one or more P-type impurities. The P-type impurities may include one or a combination of Mg, Zn, and Be. The second semiconductor layer 123 can be a single-layer structure or a multi-layer structure having different compositions. In addition, the setting of the epitaxial structure is not limited to this, and other types of epitaxial structures can be selected based on actual needs.

[0067] The first contact electrode 14 is disposed on the first semiconductor layer 121 and electrically connected to the first semiconductor layer 121. The first contact electrode 14 may have a single-layer, double-layer, or multi-layer structure, such as a metal stack structure of Ti / Al, Ti / Al / Ti / Au, Ti / Al / Ni / Au, V / Al / Pt / Au, etc. In some embodiments, the first contact electrode 14 may be formed directly on the first semiconductor layer 121 to form a good ohmic contact with the first semiconductor layer 121.

[0068] The second contact electrode 16 is disposed on the second semiconductor layer 123 and electrically connected to the second semiconductor layer 123. The second contact electrode 16 can be made of a metal material and can have a single-layer, double-layer, or multi-layer structure, for example, a metal stack structure of Ti / Al, Ti / Al / Ti / Au, Ti / Al / Ni / Au, V / Al / Pt / Au, etc.

[0069] The insulating layer 18 covers the semiconductor stack 12 , the first contact electrode 14 and the second contact electrode 16 , and has a first opening 181 and a second opening 182 . The first opening 181 exposes the first contact electrode 14 , and the second opening 182 exposes the second contact electrode 16 .

[0070] The bridging electrode 20 is disposed on the insulating layer 18. The bridging electrode 20 electrically connects two adjacent semiconductor stacks 12 through the first opening 181 and the second opening 182. For example, the bridging electrode 20 electrically connects the first semiconductor layer 121 of one of the two adjacent semiconductor stacks 12 to the second semiconductor layer 123 of the other. The bridging electrode 20 may have a multilayer structure. The material of the bridging electrode 20 may include at least one of Cr, Al, Ti, Pt, Au, Ni, Ag, TiW, Rh, Cu, Pd, and Ru. For example, the bridging electrode 20 may have a multilayer metal structure comprising, from bottom to top, a Cr layer, an Al layer, a Ti layer, and a Pt layer. The Cr layer is the surface layer of the bridging electrode 20 contacting the insulating layer 18 and may have a thickness ranging from 0 to 50 angstroms, serving as an adhesion layer. The second layer is an Al layer and may have a thickness ranging from 500 to 10,000 angstroms, providing both electrical conductivity and reflection. The bridging electrode 20 can comprise a multilayer metal structure consisting of a Ti layer, an Al layer, and a Pt layer, sequentially from bottom to top. The Ti layer, which serves as the surface layer of the bridging electrode 20 contacting the insulating layer 18 and can range in thickness from 0 to 50 angstroms, acts as an adhesion layer. The second layer, the Al layer, can range in thickness from 500 to 10,000 angstroms and provides both conductivity and reflection. In some embodiments, an Ag layer can be used instead of the Al layer as a reflective layer.

[0071] The insulating protective layer 22 covers the bridging electrode 20 and the insulating layer 18, preventing the insulating layer 18 as the outer layer of the light-emitting diode from contacting the air. The insulating protective layer 22 can not only play a protective role, preventing the influence of foreign matter such as external water vapor on the device, and improving the water vapor resistance of the light-emitting diode, but also can be used to prevent the first semiconductor layer 121 and the second semiconductor layer 123 from being electrically connected due to leakage of conductive materials, thereby reducing the short-circuit anomaly of the light-emitting diode, but the embodiments of the present disclosure are not limited to this. The material of the insulating protective layer 22 may include at least one of silicon oxide, silicon nitride and aluminum oxide. The material of the insulating protective layer 22 includes a non-conductive material. The non-conductive material is preferably an inorganic material or a dielectric material. The inorganic material may include silica gel. The dielectric material includes an electrically insulating material such as aluminum oxide, silicon nitride, silicon oxide, titanium oxide, or magnesium fluoride. In some embodiments, the insulating protection layer 22 can be a single-layer structure or a multi-layer structure, such as a single-layer SiO2 layer, a multi-layer structure of SiO2+silicon nitride, a multi-layer structure of Al2O3+SiO2, a multi-layer structure of Al2O3+SiO2+silicon nitride, etc.

[0072] Looking down at the semiconductor stack 12 from above the LED, as shown in FIG1 , the bridge electrode 20 located between two adjacent semiconductor stacks 12 has a first dimension L1. The opposing side edges 126 between the two adjacent semiconductor stacks 12 have a second dimension L2. These side edges 126 are at least partially located below the bridge electrode 20. In other words, these side edges 126 are the side edges 126 of the semiconductor stack 12 spanned by the bridge electrode 20. The first dimension L1 is parallel to the second dimension L2 and is greater than one-third of the second dimension L2. Because the shapes of the bridge electrodes 20 may be irregular and different, the magnitude and direction of the first dimension L1 of different bridge electrodes 20 are not necessarily the same. For example, FIG1 illustrates two locations with the first dimension L1 and the second dimension L2. The two shaded areas in the figure represent the regions where the bridge electrode 20 is located between two adjacent semiconductor stacks 12. The first dimension L1 is the dimension parallel to the side 126 of the semiconductor stack 12 that the bridging electrode 20 spans. The second dimension L2 is the length of the side 126 of the semiconductor stack 12 that the bridging electrode 20 spans. Compared to conventional narrow bridging electrodes (as shown in FIG5 , where the bridging electrode and current blocking layer are indicated by different shades, the conventional bridging electrode is relatively small between two adjacent semiconductor stacks, approximately 1 / 5 of the connecting edge of the semiconductor stacks, which can lead to current congestion), the bridging electrode 20 of the present invention is large enough to span the bridge (L1 > 1 / 3 of L2), effectively avoiding current congestion and preventing the bridging electrode 20 from burning.

[0073] In some embodiments, when looking down at the semiconductor stack 12 from above the light-emitting diode, at least 1 / 3 of the length of the side 126 is located below the bridging electrode 20. That is to say, taking a 90nm long side 126 as an example, at least 30nm of it is located below the bridging electrode 20, which can also avoid current congestion and the burning of the bridging electrode 20.

[0074] In some embodiments, insulating layer 18 comprises a DBR structure. A DBR structure (distributed Bragg reflector) is formed by alternating and periodically stacking thin films with different refractive indices. Specifically, insulating layer 18 of the DBR structure is formed by alternating first and second sublayers. The first and second sublayers have different refractive indices. For example, the first and second sublayers are periodic thin films composed of alternating high and low refractive index materials. SiO2 is a low-refractive index material, while TiO2 is a high-refractive index material. The SiO2 layer near semiconductor stack 12 and the SiO2 layer near bridge electrode 20 are both SiO2 layers. This is because the SiO2 layer near semiconductor stack 12 provides better insulation and reflection, while the SiO2 layer near bridge electrode 20 provides better adhesion. In other words, the DBR structure can be formed by alternating M SiO2 layers and N TiO2 layers, where M and N are positive integers ≥ 2, preferably M = N + 1. In some embodiments, the thickness of insulating layer 18 is greater than 1 μm. The thickness of the first sublayer is greater than that of the second sublayer. The thickness of the first sublayer is at least 1.5 times the thickness of the second sublayer. For example, the thickness of the first sublayer is 1.7 times, 2 times, or 2.2 times the thickness of the second sublayer. Preferably, the first sublayer closest to the semiconductor stack 12 has the greatest thickness. The thickness of the first sublayer with the greatest thickness is greater than 400 nm, so that total internal reflection can be achieved at large angles, thereby improving the overall reflection effect.

[0075] Furthermore, by adjusting the refractive index, thickness, and stacking number of the individual films that comprise the DBR structure, the DBR structure can achieve varying transmittance and reflectivity for light at different incident angles. Using a DBR structure as the insulating layer 18 can avoid the light absorption problem caused by the large size of the bridge electrode 20. (Conventional bridge electrodes that are too large can result in significant light absorption, affecting the light output performance of the LED.)

[0076] In some embodiments, the insulating layer 18 may include an Al2O3 structure and a DBR structure. Specifically, the Al2O3 structure is grown first, followed by the DBR structure. The dense Al2O3 structure is grown using an ALD process to improve reliability. The DBR structure may be formed by alternating SiO2 and TiO2 layers.

[0077] Looking down at the semiconductor stack 12 from above the LED, as shown in FIG1 , the area of ​​the bridge electrode 20 accounts for 60% to 95% of the LED. By increasing the area ratio of the bridge electrode 20, the bridge electrode 20 and the insulating layer 18 form an ODR structure with a reflective effect, further enhancing the light-emitting performance of the LED and preventing the bridge electrode 20 from burning out due to being too small. As shown in FIG5 ( FIG5 , the bridge electrode and the current blocking layer are indicated by different shades), the bridge electrode of a conventional LED cannot be made larger because it will result in severe light absorption if it is too large. However, the present invention, by placing the bridge electrode 20 on the insulating layer 18, promotes the bridge electrode 20 and the insulating layer 18 to form an ODR structure, which can help improve the overall brightness and form a large-area bridge electrode 20.

[0078] The light emitting diode may further include a transparent conductive layer 24 and a current blocking layer 26 .

[0079] The transparent conductive layer 24 is located between the second contact electrode 16 and the second semiconductor layer 123 and primarily functions to spread the current. The transparent conductive layer 24 is made of a transparent conductive material, which may include indium tin oxide (ITO), indium zinc oxide (IZO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO), aluminum zinc oxide (AZO), zinc tin oxide (ZTO), gallium doped zinc oxide (GZO), tungsten doped indium oxide (IWO), or zinc oxide (ZnO), but the present disclosure is not limited thereto.

[0080] The current-blocking layer 26 is located between the transparent conductive layer 24 and the second semiconductor layer 123, blocking vertical current. The current-blocking layer 26 is made of an insulating material, such as silicon oxide. Looking down at the semiconductor stack 12 from above the LED, as shown in Figure 1, the single current-blocking layer 26 is located only on a single semiconductor stack 12. This means that the current-blocking layer 26 no longer bridges across adjacent semiconductor stacks 12, as in conventional LEDs, causing unstable and low LED turn-on voltages, particularly in low-current applications (e.g., ≤10μA). Conventional LED current-blocking layers, like bridging electrodes, bridge across the semiconductor stack 12 to prevent short circuits. However, the present invention employs a DBR-structured insulating layer 18, which serves as the supporting layer for the bridging electrode 20. This extensive DBR structure 18 prevents unstable and low turn-on voltages in the LED. Consequently, the current-blocking layer 26 can be located only on a single semiconductor stack 12, eliminating any bridges. In addition, the DBR structure can also have a reflective effect, thereby improving the light extraction efficiency of the light-emitting diode.

[0081] Furthermore, when looking down at the semiconductor stack 12 from above the light-emitting diode, the area of ​​the current blocking layer 26 is smaller. For example, when looking down at the semiconductor stack 12 from above the light-emitting diode, the area of ​​a single current blocking layer 26 accounts for less than or equal to 4% of the area of ​​the semiconductor stack 12 in which it is located; or, the sum of the areas of the current blocking layers 26 on a single semiconductor stack 12 (there may be a situation where there are multiple current blocking layers 26 on a single semiconductor stack 12) accounts for less than or equal to 10% of the area of ​​the semiconductor stack 12 in which they are located. This can further avoid the occurrence of unstable and low turn-on voltage of the light-emitting diode, while reducing the area of ​​the current blocking layer 26 and increasing the area of ​​the light-emitting area.

[0082] In some embodiments, the current blocking layer 26 is a transparent insulating layer, which may include at least one of transparent inorganic insulating materials such as silicon oxide, silicon nitride, silicon oxynitride, titanium oxide or aluminum oxide. The thickness of the current blocking layer 26 is 200 nm to 400 nm.

[0083] In some embodiments, the LED has an island structure 32. When viewed from above the LED toward the semiconductor stack 12, the island structure 32 is located in the center of the LED. The bridging electrode 20 has a fifth opening 205 at the island structure 32. The island structure 32 prevents the LED from being broken by a pin, thereby preventing damage to the LED.

[0084] In some embodiments, when viewed from above the LED toward the semiconductor stack 12, the semiconductor stacks 12 are defined along the length direction X of the LED as a first semiconductor stack 12, a second semiconductor stack 12, and a third semiconductor stack 12. The areas of the first semiconductor stack 12, the second semiconductor stack 12, and the third semiconductor stack 12 are identical. By ensuring that the areas of the light-emitting units are the same, the current density of each semiconductor stack 12 can be made uniform, resulting in uniform light emission. The same applies to the three semiconductor stacks 12 below, ultimately ensuring that all six semiconductor stacks 12 have the same area. Due to the presence of the island structure 32, a portion of the area of ​​the original second semiconductor stack 12 is occupied. To ensure that the areas of the semiconductor stacks 12 are the same, the dimensions of each semiconductor stack 12 can be adjusted. For example, the dimensions of the second semiconductor stack 12 can be increased so that its side length is greater than the side lengths of the first and third semiconductor stacks 12. This compensates for the space occupied by the island structure 32, ensuring that the areas of the semiconductor stacks 12 and the light-emitting units are the same.

[0085] The light-emitting diode further includes a first pad 28 and a second pad 30. The insulating protective layer 22 has a third opening 223 and a fourth opening 224. The first pad 28 is disposed on the insulating protective layer 22 and is connected to the bridge electrode 20 through the third opening 223. The second pad 30 is disposed on the insulating protective layer 22 and is connected to the bridge electrode 20 through the fourth opening 224. The first pad 28 and the second pad 30 may be metal pads and may be formed together using the same material in the same process, thus having the same layer structure.

[0086] Please refer to Figures 6 to 13, which are schematic diagrams of the various structures of the light-emitting diode shown in Figure 1. As shown in Figure 6, first, multiple semiconductor stacks 12 are formed on a substrate 10. Each semiconductor stack 12 includes a first semiconductor layer 121, a light-emitting layer 122, and a second semiconductor layer 123, which are stacked sequentially on the substrate 10. The semiconductor stacks 12 do not contact each other and are spaced apart to prevent short circuits. The shaded area in the figure represents the location of the second semiconductor layer 123.

[0087] Then, as shown in FIG7 , a current blocking layer 26 is disposed on each semiconductor stack 12 to provide current blocking. The shaded area in the figure represents the location of the current blocking layer 26. Each current blocking layer 26 can be block-shaped and relatively small in area, not crossing over to adjacent semiconductor stacks 12 but located solely on its own semiconductor stack 12. The block-shaped design may mean that the current blocking layer 26 does not have a noticeable protruding strip.

[0088] 8 , a transparent conductive layer 24 is provided on the current blocking layer 26 and the semiconductor stack 12 to achieve the effect of current spreading. The shaded area in the figure is where the transparent conductive layer 24 is located.

[0089] Subsequently, as shown in FIG9 , a second contact electrode 16 and a first contact electrode 14 are disposed on the transparent conductive layer 24 and the semiconductor stack 12. The shaded area in the figure represents the region where the first contact electrode 14 and the second contact electrode 16 are located. The first contact electrode 14 is directly connected to the first semiconductor layer 121. The second contact electrode 16 is disposed on the transparent conductive layer 24 to electrically connect to the second semiconductor layer 123. From a top view, the second contact electrode 16 can also be in a block shape and located within the block-shaped current blocking layer 26 to enhance the current spreading effect.

[0090] Then, as shown in Figure 10, an insulating layer 18 is formed over the semiconductor stack 12, the first contact electrode 14, and the second contact electrode 16. The shaded area in the figure represents the location of the insulating layer 18. The insulating layer 18 has a first opening 181 and a second opening 182, which respectively expose the first contact electrode 14 and the second contact electrode 16 located below the openings. The insulating layer 18 is provided over a large area to prevent short circuits and improve overall light extraction performance.

[0091] Then, as shown in Figure 11, a bridging electrode 20 is provided on the insulating layer 18. The shaded area in the figure represents the location of the bridging electrode 20. Portions of the bridging electrode 20 extend through the first opening 181 and the second opening 182 to electrically connect two adjacent semiconductor stacks 12, forming a series, parallel, or series-parallel circuit. It should be noted that the bridging electrodes 20 located in the upper left and lower right corners of the figure do not span adjacent semiconductor stacks 12; instead, they reside solely on their respective semiconductor stacks 12, providing both light reflection and electrical conductivity.

[0092] Then, as shown in Figure 12, an insulating protective layer 22 is provided on the insulating layer 18. The shaded area in the figure is where the insulating protective layer 22 is located. The insulating protective layer 22 is provided with a third opening 223 and a fourth opening 224 to facilitate electrical conduction.

[0093] Finally, as shown in Figure 13, a first pad 28 and a second pad 30 are provided on the insulating protective layer 22. The shaded area in the figure indicates where the first pad 28 and the second pad 30 are located. The first pad 28 is provided on the insulating protective layer 22 and is connected to the bridge electrode 20 through the third opening 223. The second pad 30 is provided on the insulating protective layer 22 and is connected to the bridge electrode 20 through the fourth opening 224.

[0094] The present invention further provides a light-emitting device, which uses the light-emitting diode provided by any of the above embodiments. The light-emitting device has good photoelectric performance. The light-emitting diode is a flip-chip light-emitting diode.

[0095] The inventors conducted experiments comparing new and conventional LEDs, demonstrating that the new design (i.e., LEDs employing the present invention's structure) exhibited improvements in VF (forward voltage) by 0.1V and 0.5V, respectively, at currents of 1μA and 0.1μA. Furthermore, the VF output distribution at 0.1μA was significantly improved. Compared to conventional LEDs, the new design also achieved a 1.4% increase in overall brightness, a 2000V increase in forward ESD resistance, and a -1000V increase in negative ESD resistance.

[0096] Please refer to Figure 14, which is a schematic diagram of the structure of a light-emitting diode provided by a second embodiment of the present invention. Compared with the light-emitting diode shown in Figure 1, the light-emitting diode provided by this embodiment mainly differs in that: the semiconductor stack 12 in this embodiment is two, distributed on the left and right sides; and the bridge electrode 20 in the figure is indicated by hatching.

[0097] Please refer to Figure 15, which is a schematic diagram of the structure of a light-emitting diode provided by a third embodiment of the present invention. Compared to the light-emitting diode shown in Figure 1, the light-emitting diode provided by this embodiment differs primarily in that: in this embodiment, there are four semiconductor stacks 12 arranged in a 2*2 pattern; and the bridge electrode 20 in the figure is indicated by hatching.

[0098] Please refer to Figure 16, which is a schematic diagram of the structure of a light-emitting diode provided by a fourth embodiment of the present invention. Compared to the light-emitting diode shown in Figure 1, the light-emitting diode provided by this embodiment differs primarily in that: In this embodiment, there are eight semiconductor stacks 12 arranged in two rows, with four semiconductor stacks 12 in each row; and the bridge electrode 20 in the figure is indicated by hatching.

[0099] Please refer to Figure 17, which is a schematic diagram of the structure of a light-emitting diode provided by a fifth embodiment of the present invention. Compared to the light-emitting diode shown in Figure 1, the light-emitting diode provided by this embodiment differs primarily in that each semiconductor stack 12 is isolated from each other by an isolation trench. In other words, an isolation trench exists between two adjacent semiconductor stacks 12. The isolation trenches include a first isolation trench 41 and a second isolation trench 42, with the first isolation trench 41 connecting to the second isolation trench 42. Looking down at the semiconductor stacks 12 from above the light-emitting diode, the first isolation trench 41 is located within the region where the bridge electrode 20 is located, while the second isolation trench 42 is located outside the region where the bridge electrode 20 is located. In other words, the isolation trench located below the bridge electrode 20 is the first isolation trench 41, and the isolation trench not located below the bridge electrode 20 is the second isolation trench 42. In the figure, the second isolation trench 42 is more sparsely shaded, while the first isolation trench 41 is more densely shaded. By ensuring a ratio of the area of ​​the first isolation trench 41 to the area of ​​the second isolation trench 42 of ≥ 1:2, the bridge electrode 20 of the present invention is large-scale and cross-bridged, effectively preventing current congestion and the possibility of burning the bridge electrode 20. In some embodiments, when viewed from above the light-emitting diode toward the semiconductor stack, the first isolation trench 41 overlaps with the bridge electrode 20, while the second isolation trench 42 does not overlap with the bridge electrode 20, or only the boundary of the second isolation trench 42 overlaps with the boundary of the bridge electrode 20.

[0100] In summary, an embodiment of the present invention provides a light-emitting diode and a light-emitting device. By setting an insulating layer 18, a bridging electrode 20 and an insulating protective layer 22, the bridging electrode 20 is formed on the insulating layer 18. This can solve the problem of dimming and brightening of existing light-emitting diodes and the problem that the bridging electrode 20 is easily burned, thereby improving the reliability and quality of the light-emitting diode.

[0101] In addition, those skilled in the art should understand that, although there are many problems in the prior art, each embodiment or technical solution of the present invention may be improved in only one or several aspects, without having to simultaneously solve all the technical problems listed in the prior art or background art. Those skilled in the art should understand that any content not mentioned in a claim should not be construed as limiting the claim.

[0102] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A light emitting diode, characterized in that: The light-emitting diode includes: At least two semiconductor stacks, each semiconductor stack including a first semiconductor layer, a light-emitting layer, and a second semiconductor layer, the light-emitting layer being located between the first semiconductor layer and the second semiconductor layer; A first contact electrode disposed on the first semiconductor layer and electrically connected to the first semiconductor layer; A second contact electrode disposed on the second semiconductor layer and electrically connected to the second semiconductor layer; An insulating layer covering the semiconductor stack, the first contact electrode, and the second contact electrode, and having a first opening and a second opening; A bridging electrode disposed on the insulating layer, electrically connecting adjacent two semiconductor stacks through the first opening and the second opening; An insulating protective layer covering the bridging electrode and the insulating layer; Wherein, when looking down at the semiconductor stack from above the light-emitting diode, the size of the bridging electrode located between adjacent two semiconductor stacks is a first size, and the size of the relative side between adjacent two semiconductor stacks is a second size, and the first size is greater than 1 / 3 of the second size.

2. The light-emitting diode according to claim 1, wherein: The first size is parallel to the second size.

3. The light-emitting diode according to claim 1, wherein: At least a part of the side is located below the bridging electrode.

4. The light-emitting diode according to claim 3, wherein: At least 1 / 3 of the length of the side is located below the bridging electrode.

5. The light-emitting diode according to claim 1, characterized in that: The light-emitting diode further includes a transparent conductive layer and a current blocking layer, the transparent conductive layer being located between the second contact electrode and the second semiconductor layer, and the current blocking layer being located between the transparent conductive layer and the second semiconductor layer.

6. The light-emitting diode according to claim 5, characterized in that: When looking down at the semiconductor stack from above the light-emitting diode, a single current blocking layer is only located on a single semiconductor stack.

7. The light-emitting diode according to claim 5, characterized in that: When looking down at the semiconductor stack from above the light-emitting diode, the ratio of the area of a single current blocking layer to the area of the semiconductor stack where it is located is less than or equal to 4%.

8. The light-emitting diode according to claim 5, wherein: When looking down at the semiconductor stack from above the light-emitting diode, the ratio of the sum of the areas of the current blocking layers on a single semiconductor stack to the area of the semiconductor stack where it is located is less than or equal to 10%.

9. The light-emitting diode according to claim 1, characterized in that: The light-emitting diode has an island structure located in the central region of the light-emitting diode. When looking down at the semiconductor stack from above the light-emitting diode, the bridging electrode has a fifth opening at the island structure.

10. The light emitting diode according to claim 9, characterized in that: When looking down at the semiconductor stack from above the light-emitting diode, the semiconductor stacks are sequentially defined as a first semiconductor stack, a second semiconductor stack, and a third semiconductor stack along the length direction of the light-emitting diode, and the areas of the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are the same.

11. The light-emitting diode according to claim 1, wherein: The light-emitting diode further includes a first pad and a second pad. The insulating protective layer has a third opening and a fourth opening. The first pad is disposed on the insulating protective layer and connected to the bridging electrode through the third opening. The second pad is disposed on the insulating protective layer and connected to the bridging electrode through the fourth opening.

12. The light-emitting diode according to claim 1, wherein: The insulating protective layer is a single-layer structure or a multi-layer structure.

13. The light-emitting diode according to claim 12, characterized in that: The material of the insulating protective layer includes at least one of silicon oxide, silicon nitride, and aluminum oxide.

14. The light-emitting diode according to claim 1, characterized in that: The insulating layer includes a DBR structure, and the thickness of the insulating layer is greater than 1 μm.

15. The light-emitting diode according to claim 14, wherein: The DBR structure is formed by alternately stacking a first sub-layer and a second sub-layer, and the refractive indexes of the first sub-layer and the second sub-layer are different.

16. The light-emitting diode according to claim 15, wherein: The DBR structure is formed by alternately stacking M SiO2 layers and N TiO2 layers, where M, N ≥ 2 and M, N are positive integers.

17. The light-emitting diode according to claim 15, wherein: The thickness of the first sub-layer is greater than the thickness of the second sub-layer, and the thickness of the first sub-layer is at least 1.5 times the thickness of the second sub-layer.

18. The light-emitting diode according to claim 17, wherein: Among the multiple first sub-layers, the first sub-layer closest to the semiconductor stack has the largest thickness, and the thickness of the first sub-layer with the largest thickness is greater than 400 nm.

19. The light-emitting diode according to claim 5, characterized in that: The material of the current blocking layer includes at least one of silicon oxide, silicon nitride, silicon oxynitride, titanium oxide, or aluminum oxide, and the thickness of the current blocking layer is 200 nm to 400 nm.

20. The light emitting diode according to claim 1, wherein: Looking down from above the light-emitting diode towards the semiconductor stack, the area of the bridging electrode accounts for 60% to 95% of the light-emitting diode.

21. A light emitting diode, characterized in that: The light-emitting diode includes: At least two semiconductor stacks, each semiconductor stack including a first semiconductor layer, a light-emitting layer, and a second semiconductor layer, and the light-emitting layer is located between the first semiconductor layer and the second semiconductor layer; A first contact electrode disposed on the first semiconductor layer and electrically connected to the first semiconductor layer; A second contact electrode disposed on the second semiconductor layer and electrically connected to the second semiconductor layer; An insulating layer covering the semiconductor stack, the first contact electrode, and the second contact electrode, and having a first opening and a second opening; A bridging electrode disposed on the insulating layer, electrically connecting adjacent two semiconductor stacks through the first opening and the second opening; An insulating protective layer covering the bridging electrode and the insulating layer; Wherein, looking down from above the light-emitting diode towards the semiconductor stack, the opposite side edges between adjacent two semiconductor stacks are located below the bridging electrode, and at least 1 / 3 of the length of the side edge is located below the bridging electrode.

22. The light-emitting diode according to claim 21, wherein: The size of the bridging electrode between adjacent two semiconductor stacks is a first size, and the size of the opposite side edge between adjacent two semiconductor stacks is a second size. The first size is parallel to the second size, and the first size is greater than 1 / 3 of the second size.

23. The light-emitting diode according to claim 21, characterized in that: The light-emitting diode further includes a transparent conductive layer and a current blocking layer. The transparent conductive layer is located between the second contact electrode and the second semiconductor layer, and the current blocking layer is located between the transparent conductive layer and the second semiconductor layer.

24. The light-emitting diode according to claim 23, wherein: Looking down from above the light-emitting diode towards the semiconductor stack, a single current blocking layer is only located on a single semiconductor stack.

25. The light-emitting diode according to claim 24, wherein: Looking down from above the light-emitting diode towards the semiconductor stack, the ratio of the area of a single current blocking layer to the area of the semiconductor stack where it is located is less than or equal to 4%.

26. The light-emitting diode according to claim 24, wherein: Looking down from above the light-emitting diode towards the semiconductor stack, the ratio of the sum of the areas of the current blocking layers on a single semiconductor stack to the area of the semiconductor stack where they are located is less than or equal to 10%.

27. The light-emitting diode according to claim 1, characterized in that: Looking down from above the light-emitting diode towards the semiconductor stack, the area of the bridging electrode accounts for 60% - 95% of the light-emitting diode.

28. The light-emitting diode according to claim 21, characterized in that: The insulating protective layer is a single-layer structure or a multi-layer structure.

29. A light emitting diode, characterized in that: The light-emitting diode includes: At least two semiconductor stacks, each of the semiconductor stacks being isolated from each other by isolation grooves, each of the semiconductor stacks including a first semiconductor layer, a light-emitting layer, and a second semiconductor layer, the light-emitting layer being located between the first semiconductor layer and the second semiconductor layer; A first contact electrode, disposed on the first semiconductor layer and electrically connecting the first semiconductor layer; A second contact electrode, disposed on the second semiconductor layer and electrically connecting the second semiconductor layer; An insulating layer, covering the semiconductor stack, the first contact electrode, and the second contact electrode, and having a first opening and a second opening; A bridging electrode, disposed on the insulating layer and electrically connecting adjacent two semiconductor stacks through the first opening and the second opening; An insulating protective layer, covering the bridging electrode and the insulating layer; Wherein, the isolation grooves include a first isolation groove and a second isolation groove, the first isolation groove communicating with the second isolation groove, looking down from above the light-emitting diode towards the semiconductor stack, the first isolation groove is located within the area where the bridging electrode is located, the second isolation groove is located outside the area where the bridging electrode is located, and the ratio of the area of the first isolation groove to the area of the second isolation groove is ≥1:

2.

30. The light-emitting diode according to claim 29, wherein: Looking down from above the light-emitting diode towards the semiconductor stack, the first isolation groove overlaps with the bridging electrode.

31. The light emitting diode according to claim 29, wherein: The light-emitting diode further includes a transparent conductive layer and a current blocking layer, the transparent conductive layer being located between the second contact electrode and the second semiconductor layer, and the current blocking layer being located between the transparent conductive layer and the second semiconductor layer.

32. The light-emitting diode according to claim 31, wherein: Looking down from above the light-emitting diode towards the semiconductor stack, a single current blocking layer is only located on a single semiconductor stack.

33. The light-emitting diode according to claim 32, wherein: Looking down from above the light-emitting diode towards the semiconductor stack, the ratio of the area of a single current blocking layer to the area of the semiconductor stack where it is located is less than or equal to 4%.

34. The light-emitting diode according to claim 1, characterized in that: The light-emitting diode has an island structure, the island structure being located in the central region of the light-emitting diode, and looking down from above the light-emitting diode towards the semiconductor stack, the bridging electrode has a fifth opening at the island structure.

35. A light-emitting device, characterized in that: The light-emitting device employs the light-emitting diode according to any one of claims 1 - 34.

Images