Gas distribution assembly for semiconductor thin film processing apparatus, semiconductor thin film processing apparatus, and processing method thereof

Abstract

Embodiments of the present application provide a gas distribution assembly for a semiconductor thin film processing device, a semiconductor thin film processing device and a processing method thereof. The gas distribution assembly comprises a first gas distribution member having a reaction gas channel therein, the reaction gas channel comprising at least one reaction gas inlet on an inlet side of the first gas distribution member and a plurality of reaction gas outlets on an outlet side of the first gas distribution member, the plurality of reaction gas outlets being communicated to the reaction gas inlet; the first gas distribution member having a first baffle and a second baffle oppositely arranged on the outlet side, an outlet cavity being formed between the first baffle and the second baffle, and the plurality of reaction gas outlets being communicated to the outlet cavity. The gas distribution assembly of the present application communicates the plurality of reaction gas outlets to the outlet cavity between the first baffle and the second baffle, so that the reaction gas can be output to the reaction region in a uniform state, maintaining the stability of the reaction gas delivery and realizing the uniform film formation of the reaction gas on the substrate surface.

Description

Technical Field

[0001] This application belongs to the field of semiconductor processing technology. Specifically, this application relates to a gas distribution component for semiconductor thin film processing equipment, semiconductor thin film processing equipment and processing method thereof. Background Technology

[0002] In the semiconductor manufacturing field, the quality of semiconductor thin film deposition processes directly affects chip performance and reliability. Semiconductor thin film deposition processes require the introduction of various reactive gases into a reaction chamber, causing them to undergo chemical reactions on the surface of substrates such as wafers, thereby depositing and forming a thin film. In related technologies, improper settings for the outlet of the reactive gas affect the stability of the reactive gas delivery, making it impossible to achieve uniform coverage of the reactive gas on the substrate surface. This reduces the uniformity of thin film deposition and affects the yield and reliability of semiconductor devices. Summary of the Invention

[0003] One objective of this application is to provide a new technical solution for a gas distribution component for a semiconductor thin film processing apparatus, a semiconductor thin film processing apparatus, and a processing method thereof.

[0004] According to a first aspect of the present application, a gas distribution assembly for a semiconductor thin film processing apparatus is provided, the gas distribution assembly comprising: A first gas distribution component has a reaction gas path, the reaction gas path including at least one reaction gas inlet located on the inlet side of the first gas distribution component and a plurality of reaction gas outlets located on the outlet side of the first gas distribution component. The first gas distribution component has a first baffle and a second baffle on its outlet side, and an outlet cavity is formed between the first baffle and the second baffle. The plurality of reaction gas outlets are connected to the outlet cavity.

[0005] Optionally, the plurality of reaction gas outlets form a first outlet and a second outlet, with the first outlet located on the side of the first baffle wall near the second baffle wall, and the second outlet located on the side of the second baffle wall near the first baffle wall.

[0006] Optionally, the first gas distribution component has a proximal end and a distal end opposite to the proximal end, and the distance between the reactant gas inlet and the proximal end is smaller than the distance between the reactant gas inlet and the distal end.

[0007] Optionally, the reaction gas path includes a reaction gas buffer chamber, and the reaction gas inlet is connected to the plurality of reaction gas outlets through the reaction gas buffer chamber.

[0008] Optionally, the gas distribution assembly further includes a radio frequency module, which is disposed in the gas outlet chamber, the first baffle being a first grounding part, and the second baffle being a second grounding part; A first air outlet gap is formed between the radio frequency module and the first baffle, and a second air outlet gap is formed between the radio frequency module and the second baffle. The first air outlet is in communication with the first air outlet gap, and the second air outlet is in communication with the second air outlet gap.

[0009] Optionally, the gas distribution assembly further includes a first stop and a second stop, wherein the first stop and the second stop are disposed at both ends of the radio frequency module and together with the first baffle and the second baffle form an outlet space.

[0010] Optionally, the outlet side of the first air distribution component is circular.

[0011] According to a second aspect of the embodiments of this application, a semiconductor thin film processing apparatus is provided, the semiconductor thin film processing apparatus including a chamber base, a cover and the gas distribution assembly described in the first aspect; The chamber base has a top opening, and the cover is detachably disposed on the top opening and forms a reaction chamber between the cover and the chamber base. The cover is provided with an installation groove, and the first gas distribution component is installed in the installation groove.

[0012] Optionally, the semiconductor thin film processing apparatus includes a support unit, which is rotatably disposed in the reaction chamber and has multiple substrate support areas; The dimensions of the outlet side of the first gas distribution component match the dimensions of the substrate bearing area.

[0013] According to a third aspect of the embodiments of this application, a semiconductor thin film processing method is provided, applied to the semiconductor thin film processing apparatus described in the second aspect, the semiconductor thin film processing apparatus comprising: Rotate the support portion to move the substrate on the substrate support area to the reaction position; Thin film deposition is performed on the substrate surface at the reaction site; The substrate at the reaction position is vertically opposite to the first gas distribution component.

[0014] One technical advantage of this application is: This application provides a gas distribution assembly for a semiconductor thin film processing apparatus. The assembly includes a first gas distribution member with a reactive gas path. The reactive gas path includes at least one reactive gas inlet on the inlet side of the first gas distribution member and multiple reactive gas outlets on the outlet side of the first gas distribution member, the multiple reactive gas outlets being connected to the reactive gas inlet. A first baffle and a second baffle are spaced apart on the outlet side of the first gas distribution member, forming an outlet cavity between the first and second baffles, and the multiple reactive gas outlets are connected to the outlet cavity. This gas distribution assembly connects multiple reactive gas outlets to the outlet cavity between the first and second baffles, enabling the reactive gas to be uniformly output to the reaction area, maintaining the stability of the reactive gas delivery, achieving uniform coverage of the reactive gas on the substrate surface, ensuring the uniformity of thin film deposition, and thereby improving the yield and reliability of semiconductor devices.

[0015] Other features and advantages of this application will become clear from the following detailed description of exemplary embodiments with reference to the accompanying drawings. Attached Figure Description

[0016] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments of the present application and, together with their description, serve to explain the principles of the present application.

[0017] Figure 1 A schematic diagram of a first gas distribution component for a gas distribution assembly in a semiconductor thin film processing apparatus, provided in one embodiment of this application; Figure 2 A schematic diagram of the outlet side of the first gas distribution component of a gas distribution assembly for a semiconductor thin film processing apparatus, provided in one embodiment of this application; Figure 3 for Figure 2 Enlarged view at point E in the middle; Figure 4 A schematic diagram of the inlet side of the first gas distribution component of a gas distribution assembly for a semiconductor thin film processing apparatus, provided in one embodiment of this application; Figure 5 for Figure 4 Cross-sectional view at point AA; Figure 6 for Figure 5 Enlarged view of point B in the middle; Figure 7 for Figure 4 Cross-sectional view at point CC; Figure 8 for Figure 4 Cross-sectional view at point DD; Figure 9This is a schematic diagram of a first gas distribution component (excluding the radio frequency power supply, the first stop, and the second stop) for a gas distribution assembly of a semiconductor thin film processing apparatus according to an embodiment of this application. Figure 10 This is a schematic diagram of the first gas distribution component inlet side of a gas distribution assembly for a semiconductor thin film processing apparatus according to an embodiment of this application (excluding the radio frequency power supply). Figure 11 for Figure 10 Cross-sectional view at the EE section; Figure 12 A schematic diagram of a chamber base for a semiconductor thin film processing apparatus provided in one embodiment of this application; Figure 13 This is a schematic diagram illustrating the cooperation between the cover and the gas distribution assembly of a semiconductor thin film processing apparatus according to one embodiment of this application; Figure 14 This is a schematic diagram of the cooperation between the cover and the gas distribution assembly of a semiconductor thin film processing apparatus according to another embodiment of this application.

[0018] in: 1. Chamber base; 11. Top opening; 2. Cover; 21. Mounting groove; 3. Gas distribution assembly; 32. First gas distribution component; 321. Reactant gas inlet; 322. Reactant gas outlet; 323. First baffle; 324. Second baffle; 325. Reactant gas buffer chamber; 326. Gas distribution channel; 36. Radio frequency module; 361. First outlet gap; 362. Second outlet gap; 37. First stop; 38. Second stop; 39. Radio frequency power supply; 4. Bearing section; 42. Substrate bearing area. Detailed Implementation

[0019] Various exemplary embodiments of the present application will now be described in detail with reference to the accompanying drawings. It should be noted that, unless otherwise specifically stated, the relative arrangement, numerical expressions, and values ​​of the components and steps set forth in these embodiments do not limit the scope of the present application.

[0020] The embodiments of this application will now be described in detail, examples of which are illustrated in the accompanying drawings. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0021] The terms "first" and "second" in the specification and claims of this application may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise stated, "multiple" means two or more. Furthermore, "and / or" in the specification and claims indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0022] In the description of this application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0023] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0024] It should be noted that similar labels and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be discussed further in subsequent figures.

[0025] In related technologies, improper settings for the outlet of the reactive gas affect the stability of the reactive gas delivery, making it impossible to achieve uniform coverage of the reactive gas on the substrate surface, thereby reducing the uniformity of thin film deposition.

[0026] The gas distribution assembly for a semiconductor thin film processing apparatus provided in this application embodiment can be a spatial ALD (Alternating Discharge) device or a semiconductor etching device. Multiple reactive gas outlets of the gas distribution assembly are connected to the outlet chamber between the first and second baffle walls, enabling the reactive gas to be uniformly output to the reaction area. This maintains the stability of the reactive gas delivery, achieves uniform coverage of the reactive gas on the substrate surface, ensures the uniformity of thin film deposition, and thereby improves the yield and reliability of semiconductor devices.

[0027] Reference Figure 1 and Figure 2 This application provides a gas distribution assembly 3 for a semiconductor thin film processing apparatus, the gas distribution assembly 3 comprising: The first gas distribution component 32 has a reaction gas path, which includes at least one reaction gas inlet 321 located on the inlet side of the first gas distribution component 32 and multiple reaction gas outlets 322 located on the outlet side of the first gas distribution component 32. The multiple reaction gas outlets 322 are connected to the reaction gas inlet 321. See Figure 2 and Figure 9 The first gas distribution component 32 has a first baffle 323 and a second baffle 324 arranged at intervals on the gas outlet side, and a gas outlet chamber is formed between the first baffle 323 and the second baffle 324. Multiple reaction gas outlets 322 are connected to the gas outlet chamber.

[0028] In the above embodiments, the gas distribution assembly 3 may include a first gas distribution component 32 for supplying reactant gas into the reaction chamber and a second gas distribution component (not shown in the figure) for supplying metal source gas into the reaction chamber. The reactant gas and the metal source gas are respectively collected in different reaction regions inside the reaction chamber, so as to facilitate the reaction between the reactant gas and the metal source gas while the substrate rotates inside the reaction chamber, thereby depositing a thin film on the substrate surface. In addition, the gas distribution assembly 3 may include a separator (not shown in the figure) that divides the reaction chamber into multiple reaction regions to prevent the reactant gas and the metal source gas from reacting before contacting the substrate, thereby enhancing the separation effect between the reactant gas and the metal source gas and ensuring the uniformity and quality of the thin film deposition.

[0029] See Figure 1 and Figure 2 The reactant gas is transferred from the inlet side at the top of the first gas distribution component 32 to the outlet side at the bottom of the first gas distribution component 32. The reactant gas can be oxygen, ozone, hydrogen peroxide gas, deionized water gas, etc., and the multiple reactant gas outlets 322 on the outlet side of the first gas distribution component 32 are divided into multiple rows, with each row of outlets extending along the length of the first gas distribution component 32 (e.g., ...). Figure 2 The lateral extension of the first air distribution component 32 extends, and multiple exhaust ports are located in the width direction of the first air distribution component 32 (e.g., in the horizontal direction). Figure 2 The reactants are arranged vertically at intervals to increase the contact area between the reactant gas and the substrate, thereby improving the efficiency of thin film deposition on the substrate surface.

[0030] Specifically, the reactive gas path in the first gas distribution component 32 establishes a transmission channel for the reactive gas within the first gas distribution component 32, allowing the reactive gas to flow along a predetermined path within the first gas distribution component 32. In some embodiments, a reactive gas inlet 321 is provided on the inlet side of the first gas distribution component 32 to facilitate the connection of the reactive gas inlet 321 with an external gas source, ensuring the structural strength of the first gas distribution component 32; in other embodiments, multiple reactive gas inlets 321 are provided on the inlet side of the first gas distribution component 32. The multiple reactive gas inlets 321 can be supplied with the same type of reactive gas to increase the flow rate of the reactive gas, or different types of reactive gases can be supplied to meet the supply requirements of multiple reactive gases in the semiconductor thin film processing process.

[0031] See Figure 2 and Figure 3 Multiple gas outlets 322 can disperse the gas from the internal gas path of the first gas distribution component 32, expand the area and range of gas ejection, and make the gas more evenly distributed in the gas outlet chamber and reaction area. This helps to improve the uniformity of gas coverage on the substrate surface, facilitates the full and uniform reaction of the gas and metal source gas on the substrate surface, and improves the quality and uniformity of semiconductor thin film deposition.

[0032] See Figure 2 The first baffle 323 and the second baffle 324 are along the length of the first valve train 32 (e.g., Figure 4 The first baffle 323 and the second baffle 324 are arranged at intervals and form an outlet cavity between the first baffle 323 and the second baffle 324. This can guide and constrain the reactive gas ejected from multiple reactive gas outlets 322. The reactive gas can be output to the subsequent reaction area in a more uniform state, reducing the turbulence of the reactive gas flow, optimizing the gas flow state, ensuring the uniform distribution of the reactive gas in the reaction area, and improving the uniformity of the reaction film formation of the reactive gas and the metal source gas on the substrate surface.

[0033] The gas distribution assembly 3 provided in this application embodiment includes a first gas distribution component 32. The multiple reaction gas outlets 322 of the first gas distribution component 32 are connected to the gas outlet cavity between the first baffle 323 and the second baffle 324, so that the reaction gas can be output to the reaction area in a uniform state, maintaining the stability of the reaction gas delivery, realizing the uniform coverage of the reaction gas on the substrate surface, ensuring the uniformity of thin film deposition, and thus improving the yield and reliability of semiconductor devices.

[0034] In some embodiments, see Figure 2 and Figure 3Multiple gas outlets 322 form a first outlet and a second outlet. The first outlet is located on the side of the first baffle 323 near the second baffle 324, and the second outlet is located on the side of the second baffle 324 near the first baffle 323.

[0035] In the above embodiments, the gas distribution assembly 3 may include a separator that divides the reaction chamber into multiple reaction zones, and the substrate sequentially passes through the reaction zones as the carrier rotates within the reaction chamber. The first and second exhaust ports may be spaced apart along the rotation trajectory of the substrate to increase the frequency of contact between the reactive gas and the substrate, thereby improving the efficiency of thin film deposition on the substrate surface.

[0036] See Figure 2 First exhaust port ( Figure 2 Multiple reactive gas outlets 322 in the upper middle part are disposed on the side of the first baffle 323 near the second baffle 324, so that the reactive gas output from the first outlet can enter the outlet chamber along the first baffle 323, and after entering the outlet chamber, it can cooperate with the reactive gas output from the second outlet to increase the flow rate and concentration of reactive gas in the reaction area, and improve the uniformity of reactive gas coverage on the substrate surface and deposition efficiency.

[0037] In some embodiments, see Figure 1 and Figure 4 The first gas distribution component 32 has a proximal end and a distal end opposite to the proximal end, and the distance between the reaction gas inlet 321 and the proximal end is smaller than the distance between the reaction gas inlet 321 and the distal end.

[0038] In the above embodiments, see Figure 13 The gas distribution assembly 3 has a partition comprising a central portion and multiple branches radiating outward from the central portion. The partition divides the reaction chamber into multiple reaction zones. The first gas distribution component 32 is disposed opposite to the reaction zones and is used to converge the reaction gas into the reaction zones. The proximal and distal ends of the first gas distribution component 32 are the proximal and distal ends relative to the central portion of the partition, that is, the proximal end of the first gas distribution component 32 is the end of the first gas distribution component 32 closer to the central portion of the partition, and the distal end of the first gas distribution component 32 is the end of the first gas distribution component 32 farther from the central portion of the partition.

[0039] In this embodiment, the reactant gas inlet 321 is positioned near the center of the gas distribution assembly, allowing the reactant gas to be distributed more quickly throughout the gas distribution assembly after entering the first gas distribution assembly 32. This enables the reactant gas to flow evenly from the proximal end to the distal end of the first gas distribution assembly 32 into the reaction area, reducing pressure loss and turbulence during the flow of the reactant gas. It also avoids the problem of excessive or insufficient gas flow at some outlets due to uneven flow of the reactant gas, thereby ensuring that the reactant gas can react on the substrate surface in a stable and uniform state.

[0040] In some embodiments, see Figures 4 to 8 The reaction gas path includes a reaction gas buffer chamber 325, and the reaction gas inlet 321 is connected to multiple reaction gas outlets 322 through the reaction gas buffer chamber 325.

[0041] In the above embodiment, after the reactant gas enters through the reactant gas inlet 321, the volume of the reactant gas buffer chamber 325 is larger than the volumes of the reactant gas inlet 321 and the reactant gas outlet 322. Therefore, the reactant gas buffer chamber 325 can buffer pressure fluctuations, making the reactant gas pressure after entering the buffer chamber 325 more stable. This helps ensure that the reactant gas is output from multiple reactant gas outlets 322 at a uniform flow rate, avoiding inconsistent flow rates at the outlets due to pressure fluctuations, thereby improving the uniformity of gas distribution.

[0042] In some embodiments, see Figure 10 and Figure 11 The reaction gas path includes a gas distribution channel 326. The reaction gas inlet 321 is divided through the gas distribution channel 326 and then enters the reaction gas buffer chamber 325. Alternatively, the reaction gas inlet 321 can be divided through different channels of the gas distribution channel 326 and then enter the same reaction gas buffer chamber 325 to achieve uniform mixing of the reaction gas. Or, the reaction gas inlet 321 can be divided through different channels of the gas distribution channel 326 and then enter multiple reaction gas buffer chambers 325. The multiple reaction gas buffer chambers 325 correspond to multiple exhaust ports for gas discharge to increase the collection flow rate of the reaction gas on the substrate surface and improve the efficiency of thin film deposition on the substrate surface.

[0043] In some embodiments, see Figures 4 to 7 The gas distribution assembly 3 also includes a radio frequency module 36, which is disposed in the gas outlet chamber. The first baffle 323 is the first grounding part, and the second baffle 324 is the second grounding part. A first air outlet gap 361 is formed between the radio frequency module 36 and the first baffle 323, and a second air outlet gap 362 is formed between the radio frequency module 36 and the second baffle 324. The first air outlet is in relative communication with the first air outlet gap 361, and the second air outlet is in relative communication with the second air outlet gap 362.

[0044] In the above embodiments, the radio frequency module 36 in the gas distribution assembly 3 can generate radio frequency energy to excite the reactant gas in the gas outlet chamber, causing the reactant gas molecules to ionize or decompose into plasma, thereby generating a large number of active particles such as ions and free radicals. These active particles have high chemical activity, which can lower the reaction temperature and allow the active particles to participate more effectively in the thin film deposition reaction, thereby improving the rate and quality of thin film deposition. Specifically, by adjusting the power and frequency parameters of the radio frequency module 36, the degree of excitation of the reactant gas and the number of active particles generated can be precisely controlled. This allows for flexible adjustment of reaction conditions according to different thin film materials and process requirements, achieving precise control of the thin film deposition process and improving the stability and repeatability of the process.

[0045] In addition, when the carrier rotates inside the reaction chamber, it works in conjunction with the radio frequency module 36 to change the discharge space of the reaction chamber. After the cleaning gas is excited to obtain plasma, it can meet the cleaning requirements of the reaction chamber and ensure the cleanliness of the reaction chamber.

[0046] See Figure 7 The first and second outlet gaps 361 and 362 provide flow channels for the reactive gas, guiding it to flow in the direction of the gap extension. This helps to create an orderly airflow distribution within the outlet cavity, preventing eddies or dead zones and improving the utilization rate of the reactive gas and the uniformity of thin film deposition. Simultaneously, the electric field generated by the RF module 36 is distributed within the outlet cavity. The placement of the first and second outlet gaps 361 and 362 ensures a more uniform distribution of the electric field in the reactive gas flow area, guaranteeing that molecules in the reactive gas are uniformly affected by the electric field, further improving the generation efficiency of active particles and the quality of thin film deposition.

[0047] Combination Figure 2 and Figure 7 In this embodiment, multiple reactive gas outlets 322 are divided into a first outlet and a second outlet, and the first outlet and the second outlet are respectively connected to the first outlet gap 361 and the second outlet gap 362. This realizes the zoned distribution and delivery of reactive gases, which can more flexibly control the distribution of reactive gases on the substrate surface and the reaction process, making the deposition of active particles on the substrate surface more uniform, thereby effectively improving the uniformity of the film on the entire substrate.

[0048] In some embodiments, see Figure 1The gas distribution assembly 3 also includes a radio frequency (RF) power supply 39. The RF power supply 39 provides the energy source for the normal operation of the RF module 36, converting electrical energy into RF energy suitable for the operation of the RF module 36, thus providing power support for the RF module 36 to excite the reactive gas. Specifically, by precisely controlling the output power, frequency, and other parameters of the RF power supply 39, the intensity and frequency characteristics of the RF field generated by the RF module 36 can be indirectly and precisely controlled, thereby achieving fine control of the thin film deposition process and improving the quality and performance of the thin film.

[0049] In some embodiments, see Figure 1 and Figure 2 The valve distribution assembly 3 also includes a first stop 37 and a second stop 38, which are disposed at both ends of the radio frequency module 36.

[0050] In the above embodiments, the first stop 37 and the second stop 38 can be ceramic bodies that prevent the reaction gas from overflowing, ensuring the dimensional stability of the first gas outlet gap 361 and the second gas outlet gap 362, thereby maintaining the uniformity of the reaction gas output and the stability of the plasma generation effect. At the same time, the first stop 37 and the second stop 38 can also protect the radio frequency module 36, preventing the radio frequency module 36 from being damaged by collisions with external objects.

[0051] In some embodiments, see Figure 14 The outlet side of the first air distribution component 32 is circular.

[0052] In the above embodiments, the gas outlet side of the first gas distribution component 32 may be provided with a plurality of reaction gas outlets 322 arranged in an array, for example, the plurality of reaction gas outlets 322 are arranged as follows: Figure 14 The circular array distribution shown is adapted to the shape of the circular substrate, allowing the reactive gases output from multiple reactive gas outlets 322 to more uniformly cover the surface of the circular substrate. This avoids excessively high or low gas concentrations at the substrate edges or corners, thereby improving the uniformity of thin film deposition. Furthermore, the circular outlet sides allow for a more symmetrical and smoother airflow path for the reactive gases within the outlet chamber. The reactive gases can flow out of the outlets more uniformly, reducing airflow turbulence and eddies, and improving the utilization rate of the reactive gases on the substrate surface.

[0053] In the above embodiments, an intermittent stop process can be used to deposit thin films on the substrate surface. Specifically, the substrate is rotated until it is directly opposite the outlet side of the first gas distribution component 32, and then rotation is stopped. The deposition time is set while the substrate remains vertically opposite the first gas distribution component 32, thereby improving the porosity of the substrate surface and the efficiency and quality of the deposited thin film.

[0054] Additionally, it is worth noting that Figure 14The first baffle 323 and the second baffle 324 are not shown in the figure. Specifically, the first baffle 323 and the second baffle 324 can be arc-shaped baffles or straight baffles that are respectively set on the gas outlet side edge of the first gas distribution component 32, so as to guide and constrain the reaction gas ejected from multiple reaction gas outlets 322, and the reaction gas can be output to the subsequent reaction area in a more uniform state.

[0055] See Figure 12 and Figure 13 This application provides a semiconductor thin film processing apparatus, which includes a chamber base 1, a cover 2, and the aforementioned gas distribution assembly 3. The chamber base 1 has a top opening 11, and the cover 2 is detachably disposed at the top opening 11 and forms a reaction chamber between the cover 2 and the chamber base 1. The cover 2 is provided with an installation groove 21, and the first gas distribution component 32 is installed in the installation groove 21.

[0056] In the above embodiments, the chamber base 1 provides a stable support and installation platform for the semiconductor thin film processing equipment. The chamber base 1 has a top opening 11, which cooperates with the cover 2 to form a reaction chamber, providing a spatial environment for the semiconductor thin film processing process. At the same time, the chamber base 1 can withstand the pressure and temperature changes during the process operation inside the reaction chamber, ensuring the long-term stable operation of the semiconductor thin film processing equipment.

[0057] In addition, the top opening 11 allows the cover 2 to be easily opened when maintenance and repair work such as inspection, cleaning, and replacement of parts is required inside the reaction chamber, ensuring the cleanliness and process stability of the reaction chamber.

[0058] See Figure 10 The mounting groove 21 can be a through hole or a countersunk hole on the cover 2. The mounting groove 21 can accurately position the first gas distribution component 32 on the cover 2, ensure the stability of the installation of the first gas distribution component 32, ensure the gas intake effect of the first gas distribution component 32 on the reaction chamber and the reaction in each reaction area can be carried out according to the predetermined process parameters, thereby improving the quality of thin film deposition.

[0059] In some embodiments, see Figure 12 The semiconductor thin film processing equipment includes a support unit 4, which is rotatably disposed in the reaction chamber and has multiple substrate support areas 42; The dimensions of the outlet side of the first air distribution component 32 are matched with the dimensions of the substrate bearing area 42.

[0060] In the above embodiments, the rotation of the support portion 4 allows the substrate to continuously change its position and angle within the reaction chamber. This ensures that the reactive gases from different reaction regions can more evenly cover various parts of the substrate, effectively avoiding problems such as uneven distribution of reactive gases or uneven heating of the substrate, thus improving the uniformity of thin film deposition on the substrate surface. Simultaneously, by controlling parameters such as the rotation speed and direction of the support portion 4, the movement state of the substrate within the reaction chamber can be flexibly adjusted according to different thin film materials and process requirements, achieving precise control of the thin film deposition process.

[0061] See Figure 12 Multiple substrate support areas 42 allow the support portion 4 to simultaneously place multiple substrates, enabling simultaneous processing of multiple substrates in a single thin film deposition process, thus improving the efficiency of semiconductor thin film production. Furthermore, the dimensions of the outlet side of the first gas distribution component 32 match the dimensions of the substrate support area 42. For example, both the outlet side of the first gas distribution component 32 and the substrate support area 42 are circular, elliptical, fan-shaped, or elongated with equal areas. This ensures that the reactive gas output from the outlet side of the first gas distribution component 32 accurately covers the substrate surface on the substrate support area 42, avoiding waste and leakage of reactive gas, improving the utilization rate of reactive gas, and reducing interference from reactive gas to other parts of the reaction chamber.

[0062] This application provides a semiconductor thin film processing method, applied to the aforementioned semiconductor thin film processing equipment, the semiconductor thin film processing method comprising: S101, rotate the support part to rotate the substrate on the substrate support area to the reaction position; This embodiment of the application, by rotating the carrier, enables the substrate placed on the substrate carrier area to be accurately moved to the reaction position. Moreover, since the carrier has multiple substrate carrier areas, the rotation operation can flexibly select different substrates for thin film deposition, achieving orderly processing of multiple substrates and improving production efficiency.

[0063] It is worth noting that, since the reactive gas is continuously introduced into the reaction zone, thin film deposition can also be performed on the substrate surface during the rotation of the support unit.

[0064] S102, thin film deposition is performed on the substrate surface at the reaction site; The substrate at the reaction position is vertically opposite to the first gas distribution component.

[0065] In the above embodiments, the first gas distribution component can uniformly deliver the reactive gas to the reaction position. The substrate at the reaction position is positioned vertically opposite to the first gas distribution component, so that the reactive gas can directly act on the entire surface of the substrate within a set time. This reduces the diffusion and loss of the reactive gas during the transmission process, improves the concentration and uniformity of the reactive gas, and is beneficial for forming a uniform thin film on the substrate surface, thereby improving the utilization rate of the reactive gas and the efficiency of thin film deposition.

[0066] While specific embodiments of this application have been described in detail by way of examples, those skilled in the art should understand that the above examples are for illustrative purposes only and are not intended to limit the scope of this application. Those skilled in the art should understand that modifications can be made to the above embodiments without departing from the scope and spirit of this application. The scope of this application is defined by the appended claims.

Claims

1. A gas distribution assembly for a semiconductor thin film processing apparatus, characterized in that, include: A first gas distribution component (32) has a reaction gas path, the reaction gas path including at least one reaction gas inlet (321) on the inlet side of the first gas distribution component (32) and a plurality of reaction gas outlets (322) on the outlet side of the first gas distribution component (32). The first gas distribution component (32) has a first baffle (323) and a second baffle (324) arranged opposite to each other on the gas outlet side. A gas outlet cavity is formed between the first baffle (323) and the second baffle (324), and the plurality of reaction gas outlets (322) are connected to the gas outlet cavity.

2. The gas distribution assembly according to claim 1, characterized in that, The plurality of reaction gas outlets (322) form a first outlet and a second outlet. The first outlet is located on the side of the first baffle (323) near the second baffle (324), and the second outlet is located on the side of the second baffle (324) near the first baffle (323).

3. The gas distribution assembly according to claim 1, characterized in that, The first gas distribution component (32) has a proximal end and a distal end opposite to the proximal end, and the distance between the reactive gas inlet (321) and the proximal end is less than the distance between the reactive gas inlet (321) and the distal end.

4. The gas distribution assembly according to claim 1, characterized in that, The reaction gas path includes a reaction gas buffer chamber (325), and the reaction gas inlet (321) is connected to the plurality of reaction gas outlets (322) through the reaction gas buffer chamber (325).

5. The gas distribution assembly according to claim 2, characterized in that, It also includes a radio frequency module (36), which is disposed in the air outlet chamber, the first baffle (323) is a first grounding part, and the second baffle (324) is a second grounding part; A first air outlet gap (361) is formed between the radio frequency module (36) and the first baffle (323), and a second air outlet gap (362) is formed between the radio frequency module (36) and the second baffle (324). The first exhaust port is in relative communication with the first air outlet gap (361), and the second exhaust port is in relative communication with the second air outlet gap (362).

6. The gas distribution assembly according to claim 5, characterized in that, It also includes a first stop (37) and a second stop (38), which are disposed at both ends of the radio frequency module (36) and together with the first baffle (323) and the second baffle (324) to form an air outlet space.

7. The gas distribution assembly according to claim 1, characterized in that, The outlet side of the first air distribution component (32) is circular.

8. A semiconductor thin film processing apparatus, characterized in that, It includes a chamber base (1), a cover (2), and a gas distribution assembly (3) as described in any one of claims 1-7; The chamber base (1) has a top opening (11), and the cover (2) is detachably disposed on the top opening (11) and forms a reaction chamber with the chamber base (1). The cover (2) is provided with an installation groove (21), and the first gas distribution component (32) is installed in the installation groove (21).

9. The semiconductor thin film processing apparatus according to claim 8, characterized in that, The semiconductor thin film processing equipment includes a support unit (4), which is rotatably disposed in the reaction chamber and has multiple substrate support areas (42). The dimensions of the outlet side of the first gas distribution component (32) are matched with the dimensions of the substrate bearing area (42).

10. A semiconductor thin film processing method, applied to the semiconductor thin film processing apparatus of claim 8 or 9, characterized in that, include: Rotate the support portion to move the substrate on the substrate support area to the reaction position; Thin film deposition is performed on the substrate surface at the reaction site; The substrate at the reaction position is vertically opposite to the first gas distribution component.

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