A gallium oxide crystal synchronous growth device and a growth method
By combining multiple funnel-shaped crucible bodies (wider at the top and narrower at the bottom) with lifting and rotating mechanisms, the synchronous growth of gallium oxide crystals is achieved. This solves the problems of crystal defects caused by volatilization loss of precious metal crucibles and thermal stress, thereby improving growth efficiency and reducing costs.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SICC CO LTD
- Filing Date
- 2026-03-30
- Publication Date
- 2026-06-05
AI Technical Summary
In existing gallium oxide crystal growth technologies, the volatilization loss of noble metal crucibles is high, the crystal growth efficiency is low, and crystal defects caused by thermal stress are easily generated, making it difficult to achieve efficient and stable crystal growth in a high-temperature and oxygen-rich environment.
By combining multiple funnel-shaped crucible bodies that are wider at the top and narrower at the bottom, along with lifting and rotating components and independent temperature zone control, the synchronous growth of gallium oxide crystals can be achieved. By performing melting, crystal growth and annealing in different temperature zones, the volatilization loss of precious metal crucibles can be reduced and thermal stress can be lowered.
This improved the growth efficiency of gallium oxide crystals, reduced crystal defects, decreased the loss of precious metal crucibles, lowered growth costs, and enhanced crystal quality and stability.
Smart Images
Figure CN122147528A_ABST