Substrate processing apparatus, inspection apparatus, and inspection method

Abstract

The present application provides a substrate processing apparatus, an inspection apparatus, and an inspection method. The inspection apparatus includes a sensor module that is electrically connected to an RF path that transmits RF power to measure parameters of a 4-port network, and a processing module that inspects a state of an RF fitting that generates or transmits RF power in the substrate processing apparatus based on the parameters of the 4-port network. The sensor module includes a first sensor that is electrically connected to a first path between a first RF power source that supplies RF power of a first frequency and an electrode plate of a substrate support member that supports the substrate, a second sensor that is electrically connected to a second path between a second RF power source that supplies RF power of a second frequency that is lower than the first frequency and the electrode plate, a third sensor that is electrically connected to a third path between a third RF power source that supplies RF power of a third frequency that is lower than the second frequency and the electrode plate, and a fourth sensor that is electrically connected to an edge electrode that is disposed at an edge of the substrate support member.

Description

Technical Field

[0001] This invention relates to an inspection apparatus and method for inspecting the electrical characteristics of a plasma-based substrate processing device. Background Technology

[0002] Semiconductor (or display) manufacturing processes are processes used to manufacture semiconductor devices on a substrate (e.g., a wafer), including processes such as exposure, evaporation, etching, ion implantation, and cleaning. To perform these processes, cleanrooms are equipped with semiconductor manufacturing equipment to perform the respective processes on the substrates that are fed into the equipment.

[0003] The plasma processing process is performed by applying RF (radio frequency) power through electrodes located above or below the processing space, together with the supply of processing gas for plasma processing, via an electrostatic chuck on which a substrate is placed below.

[0004] Plasma-based substrate processing apparatuses include RF components for generating or transmitting RF power. When producing multiple substrate processing apparatuses, uniform electrical performance is required across all components, especially the RF components. Therefore, effective evaluation of the RF component performance is necessary. Summary of the Invention

[0005] The present invention provides an inspection apparatus and method for effectively inspecting the status of RF accessories, as well as a substrate processing apparatus.

[0006] An inspection apparatus for inspecting the electrical characteristics of a plasma-based substrate processing device according to the present invention includes: a sensor module electrically connected to an RF path for transmitting RF power to measure parameters of a 4-port network; and a processing module for inspecting the status of an RF accessory that generates or transmits RF power in the substrate processing device based on the parameters of the 4-port network. The sensor module includes: a first sensor electrically connected to a first path between a first RF power source supplying RF power at a first frequency and an electrode plate of a substrate support member supporting the substrate; a second sensor electrically connected to a second path between a second RF power source supplying RF power at a second frequency lower than the first frequency and the electrode plate; a third sensor electrically connected to a third path between a third RF power source supplying RF power at a third frequency lower than the second frequency and the electrode plate; and a fourth sensor electrically connected to an edge electrode disposed at the edge of the substrate support member.

[0007] The method for inspecting the electrical characteristics of a plasma-based substrate processing apparatus according to the present invention includes: a step of measuring parameters of a 4-port network by means of a sensor module electrically connected to an RF path for transmitting RF power; and a step of inspecting the status of RF accessories that generate or transmit RF (radio frequency) power in the substrate processing apparatus based on the parameters of the 4-port network.

[0008] The plasma-based substrate processing apparatus according to the present invention includes: a cavity for forming a processing space for a substrate; a substrate support member including: a dielectric plate for supporting the substrate from below; an electrode plate disposed below the dielectric plate; and an edge electrode disposed outside the electrode plate; a first RF power supply for supplying RF power of a first frequency to the electrode plate via a first RF cable; a second RF power supply for supplying RF power of a second frequency higher than the first frequency to the electrode plate via a second RF cable; a third RF power supply for supplying RF power of a third frequency higher than the second frequency to the electrode plate via a third RF cable; an impedance matching device connected between the first RF power supply, the second RF power supply, the third RF power supply, and the electrode plate; an edge impedance control circuit connected to the edge electrode via an RF rod disposed inside the cavity and a fourth RF cable disposed outside the cavity; and an inspection device for inspecting the electrical characteristics of the substrate processing apparatus.

[0009] According to the present invention, the electrical characteristics of RF accessories can be effectively checked by measuring the parameters of a 4-port network based on the four terminals of the substrate processing device. Attached Figure Description

[0010] Figure 1 The structure of the substrate processing apparatus according to the present invention is shown.

[0011] Figure 2 The structure of the inspection device according to the present invention is shown.

[0012] Figure 3 This is a flowchart illustrating the inspection method according to the present invention.

[0013] Figure 4 The parameter matrix of a 4-port network is shown.

[0014] Figure 5 This example illustrates how the performance of each component can be evaluated using parameters based on frequency.

[0015] (Explanation of reference numerals in the attached diagram)

[0016] 1: Substrate processing device

[0017] 10: Cavity

[0018] 20: Substrate support component

[0019] 110: Dielectric plate

[0020] 115: Electrode plate

[0021] 150: Edge electrode

[0022] 30: RF power supply

[0023] 31: Impedance Matching Device

[0024] 62: Edge Impedance Control Circuit

[0025] 200: Inspection device

[0026] 210: Sensor Module

[0027] 220: Processing Module Detailed Implementation

[0028] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, so that those skilled in the art to which this invention pertains can readily implement it. However, the present invention can be implemented in various different ways and is not limited to the embodiments described herein.

[0029] To clearly illustrate the invention, irrelevant parts have been omitted, and the same or similar components are marked with the same reference numerals throughout the specification.

[0030] Furthermore, in multiple embodiments, the same reference numerals are used to describe only representative embodiments of the constituent elements having the same structure, while in other embodiments only structures different from the representative embodiments are described.

[0031] Throughout the specification, when a part is described as being "connected (or combined)" with other parts, this includes not only "direct connection (or combination)" but also "indirect connection (or combination)" through other components. Furthermore, when a part is described as "including" a constituent element, unless specifically stated otherwise, it implies that other constituent elements may also be included, rather than excluding them.

[0032] Unless otherwise defined, all terms used herein, including technical or scientific terms, shall have the same meaning as commonly understood by one of ordinary knowledge in the art to which this invention pertains. Terms such as those defined in commonly used dictionaries shall be interpreted as having a meaning consistent with the meaning in the context of the relevant art, and shall not be ideally or excessively interpreted as having a formal meaning unless expressly defined in this application.

[0033] This invention provides a method and apparatus for inspecting RF accessories (e.g., RF power supplies, impedance matching devices, filters, cables, rods, connectors) that supply or transmit RF (radio frequency) power in a substrate processing apparatus 1. The substrate processing apparatus 1 is an apparatus that uses plasma to perform process treatments (e.g., dry etching) on ​​a substrate W such as a silicon wafer.

[0034] Figure 1 The structure of a substrate processing apparatus according to the present invention is shown. The plasma-utilizing substrate processing apparatus 1 according to the present invention includes a cavity 10 for forming a plasma processing space PZ of a substrate W. The substrate processing apparatus 1 includes a substrate support member 20 located at the lower part of the cavity 10. The substrate processing apparatus 1 includes RF power supplies 30A, 30B, and 30C that supply power for generating plasma in the processing space PZ to electrode plates 115 of the substrate support member 20. The substrate processing apparatus 1 includes an impedance matching device 31 connected between the RF power supplies 30A, 30B, and 30C and the substrate support member 20.

[0035] The cavity 10 provides a plasma processing space PZ for the substrate W, and accessories for processing the substrate W using plasma are disposed inside the cavity 10. A nozzle 35 is disposed at the upper part of the cavity 10, and a substrate support member 20 is disposed at the lower part of the cavity 10. The nozzle 35 can be grounded. The nozzle 35 can dispense processing gas and supply it to the processing space PZ. A gas supply source 40 can supply processing gas to the nozzle 35, and the processing gas is supplied to the processing space PZ through the nozzle 35.

[0036] A substrate support member 20 is disposed below the processing space PZ. The substrate support member 20 includes a dielectric plate 110 that supports the substrate W from below. The substrate support member 20 includes an electrode plate 115 disposed below the dielectric plate 110. The electrode plate 115 is supported below by a lower support body 120. The substrate support member 20 includes an edge electrode 150 disposed on the outer side of the electrode plate 115. The edge electrode 150 is disposed at the edge of the substrate support member 20. The edge electrode 150 is embedded inside an insulating ring 140. The insulating ring 140 is disposed below an edge ring 130. The edge ring 130 is disposed on the outer side of the dielectric plate 110. The edge ring 130 may be made of a material such as silicon (Si), silicon carbide (SiC), or quartz. An insulating cover ring 170 may be disposed below the insulating ring 140. The cover ring 170 is provided to surround the outer side of the electrode plate 115.

[0037] The substrate support member 20 is disposed at the lower part of the cavity 10 and supports the substrate W using electrostatic force. An adsorption electrode 112 for using electrostatic force to press the substrate W tightly against the substrate support member 20 can be disposed inside the dielectric plate 110.

[0038] The dielectric plate 110 is a structure that supports the substrate W from below, and an adsorption electrode 112 is formed inside it. The dielectric plate 110 may be made of a ceramic material (e.g., Al2O3).

[0039] The electrode plate 115 is provided in the shape of a disk made of a metallic (e.g., Al) material. The electrode plate 115 may consist of a lower region having a certain diameter and an upper region having a diameter smaller than that of the lower region. A cooling flow path 122 may be formed in the lower region of the electrode plate 115. The upper region of the electrode plate 115 may be combined with the dielectric plate 110. That is, the electrode plate 115 may have a shape with a protruding lower region. Although not shown, an edge ring 130 for plasma control of the edge portion of the substrate W may be provided above the protruding portion of the electrode plate 115.

[0040] A coating made of aluminum oxide (Al2O3) can be formed on the outer surface of the electrode plate 115. The coating prevents the electrode plate 115, made of metallic (e.g., Al) material, from being exposed to the external environment, especially plasma. In addition, a bonding layer is formed between the dielectric plate 110 and the electrode plate 115 to bond the dielectric plate 110 and the electrode plate 115 together.

[0041] Edge electrode 150 is connected to edge impedance control circuit 62 via fourth RF cable 33D. Edge impedance control circuit 62 may include at least one fixed or variable impedance element (e.g., capacitor, inductor), and the impedance of edge electrode 150 is adjusted by changing the impedance of each impedance element. The plasma sheath near edge electrode 150 is adjusted according to the impedance of edge electrode 150, thus the angle of ions incident on substrate W can be adjusted.

[0042] If the edge impedance control circuit 62 connected to the edge electrode 150 is controlled to increase the impedance, the amount of RF power applied to the electrode plate 115 transmitted to the edge ring 130 side is greater than that of the edge electrode 150. As a result, the potential above the edge ring 130 increases, and the plasma sheath adjusts away from the edge ring 130. Conversely, if the edge impedance control circuit 62 is controlled to decrease the impedance, the amount of RF power applied to the electrode plate 115 transmitted to the edge ring 130 side increases. As a result, the potential above the edge ring 130 decreases, and the plasma sheath adjusts closer to the edge ring 130. Thus, by controlling the amount of RF power transmitted to the edge ring 130 from the electrode plate 115, the potential at the upper end of the edge ring 130 can be changed, thereby controlling the plasma sheath. In particular, by connecting the edge impedance control circuit 62 to the edge electrode 150 which is insulated from the edge ring 130 instead of directly connecting the edge impedance control circuit 62 to the edge ring 130, the central region, except for the extremely narrow edge area about 3 mm below the end of the substrate W, can be left unaffected.

[0043] Edge electrode 150 is provided in the form of a ring. Edge electrode 150 is connected to RF rod 117 disposed inside cavity 10. RF rod 117 is connected to edge impedance control circuit 62 via cover ring 170. RF rod 117 forms an electrical path between edge electrode 150 and edge impedance control circuit 62 inside cavity 10. RF rod 117 is connected at connection terminal E4 to fourth RF cable 33D disposed outside cavity 10. Edge electrode 150 can be connected to edge impedance control circuit 62 via RF rod 117 and fourth RF cable 33D.

[0044] RF power supplies 30A, 30B, and 30C apply RF power to the electrode plate 115 of the substrate support member 20 corresponding to the lower electrode. The first RF power supply 30A supplies RF power at a first frequency to the electrode plate 115. The second RF power supply 30B supplies RF power at a second frequency lower than the first frequency to the electrode plate 115. The third RF power supply 30C supplies RF power at a third frequency lower than the second frequency to the electrode plate 115. The first frequency may be tens to hundreds of MHz (e.g., 60 MHz), the second frequency may be several to tens of MHz (e.g., 2 MHz), and the third frequency may be hundreds of kHz (e.g., 400 kHz). Process characteristics such as plasma density, ion energy, and reaction uniformity can be precisely controlled by the RF power supplies 30A, 30B, and 30C, which provide RF power at different frequencies to each other.

[0045] exist Figure 1In the diagram, RF power supplies 30A, 30B, and 30C are shown connected to electrode plate 115, but they can be connected to other electrodes of substrate support member 20. For example, the first RF power supply 30A and the second RF power supply 30B of RF power supplies 30A, 30B, and 30C can be connected to electrode plate 115, and the third RF power supply 30C can be connected to a bias electrode embedded inside dielectric plate 110. Alternatively, some or all of the RF power supplies 30A, 30B, and 30C can also be applied to the upper electrode on the nozzle 35 side. Figure 1 The substrate processing apparatus 1 illustrates a structure using capacitively coupled plasma (CCP). However, the present invention is not limited to CCP and can also be applied to apparatuses using inductively coupled plasma (ICP).

[0046] An impedance matching device 31 can be installed between the RF power supplies 30A, 30B, 30C and the electrode plate 115 for impedance matching purposes. The first RF power supply 30A can be connected to the impedance matching device 31 via the first RF cable 33A. The first RF cable 33A can be installed at the first input terminal 31A of the impedance matching device 31. The second RF power supply 30B can be connected to the impedance matching device 31 via the second RF cable. The second RF cable 33B can be installed at the second input terminal 31B of the impedance matching device 31. The third RF power supply 30C can be connected to the impedance matching device 31 via the third RF cable. The third RF cable 33C can be installed at the third input terminal 31C of the impedance matching device 31. Multiple impedance matching circuits can be installed within the impedance matching device 31. Each impedance matching circuit adjusts the impedance of the power supply path to maximize the power output from the RF power supplies 30A, 30B, 30C for transmission to the plasma load. The impedance matching circuit may include one or more impedance elements (e.g., inductors, capacitors).

[0047] Nozzle 35 supplies gas to plasma processing space PZ. Here, processing space PZ refers to the space above substrate support member 20 within the internal space of cavity 10. Gas supply source 40 supplies gas used in processing substrate W to nozzle 35.

[0048] The nozzle 35 can be positioned at the upper part of the cavity 10, opposite the substrate support member 20 in the vertical direction Z. Such a gas supply unit can have multiple gas injection holes for injecting gas into the cavity 10. The gas supply unit can be provided with a diameter larger than that of the substrate support member 20 in the horizontal direction X. The gas supply unit can be a nozzle including multiple gas injection holes. Alternatively, the gas supply unit can be a structure having one or more gas supply nozzles.

[0049] Inspection apparatus 200 inspects the status of RF components in substrate processing apparatus 1. Herein, RF components are electrical components that generate, transmit, convert, or measure RF signals, thus affecting plasma process characteristics. RF components are used to generate RF power, minimize RF power loss, and prevent damage to other RF components. An RF path is a path for transmitting RF power by combining at least one RF component.

[0050] Figure 2 The structure of the inspection device according to the present invention is shown. The inspection device 200 includes a sensor module 210 and a processing module 220. The sensor module 210 and the processing module 220 are electrically connected to each other.

[0051] Sensor module 210 includes sensors 210A, 210B, 210C, and 210D electrically connected to multiple ports in the RF path of substrate processing device 1, and a network analyzer 215. Sensor module 210 is electrically connected to substrate processing device 1 to measure parameters of a 4-port network. Sensor module 210 includes a first sensor 210A, a second sensor 210B, a third sensor 210C, a fourth sensor 210D, and a network analyzer 215. The first sensor 210A, second sensor 210B, third sensor 210C, and fourth sensor 210D can be sensors that measure impedance at the connection point. The first sensor 210A, second sensor 210B, third sensor 210C, and fourth sensor 210D can each apply a test signal (voltage or current) and measure the signal (voltage or current) output from the connection point. The first sensor 210A, second sensor 210B, third sensor 210C, and fourth sensor 210D may include circuitry for applying a signal to the measurement point and transmitting the measured signal. The first sensor 210A, the second sensor 210B, the third sensor 210C, and the fourth sensor 210D can be connected to a network analyzer 215. The network analyzer 215 can transmit control signals to the first sensor 210A, the second sensor 210B, the third sensor 210C, and the fourth sensor 210D, calculate 4-port parameters from the measured signals, and transmit them to the processing module 220. The network analyzer 215 may include a signal generation circuit that generates signals of multiple frequencies, and a signal processing circuit that converts and processes the measured signals.

[0052] Processing module 220 checks the status of substrate processing device 1 using parameters from the 4-port network provided by sensor module 210. Processing module 220 includes processor 222, memory 224, storage device 226, and input / output interface 228. Processor 222 performs data processing and control functions. Processor 222 performs various calculations and logical operations to control the operation of sensor module 210 and processing module 220. Processor 222 processes digital signals, analyzes input data to generate output data, and manages inter-device communication. Processor 222 uses parameters from the 4-port network provided by sensor module 210 to perform data processing and calculations for checking the status of substrate processing device 1. Memory 224 assists the data processing process of processor 222 and stores data within processing module 220. Memory 224 can be a volatile memory such as DRAM (dynamic random access memory). Storage device 226 is a non-volatile memory (e.g., SSD (solid-state drive) or HDD (hard disk drive)) used for permanent data storage. Input / output interface 228 handles data transmission and reception between module 220 and external systems, supporting various connection methods such as USB (universal serial bus), Ethernet, and Bluetooth. Through input / output interface 228, processing module 220 can connect to sensor module 210. Through input / output interface 228, processing module 220 can connect to external input / output devices (e.g., monitor, keyboard, mouse).

[0053] According to the present invention, the sensor module 210 measures impedance at four points (ports) in the substrate processing apparatus 1. The first sensor 210A is electrically connected to a first path P1 between the first RF power supply 30A and the electrode plate 115. Specifically, the first sensor 210A can be electrically connected to the first input terminal 31A of the first RF cable 33A connected to the first RF power supply 30A, which is mounted on the impedance matching device 31. The second sensor 210B is electrically connected to a second path P2 between the second RF power supply 30B and the electrode plate 115. Specifically, the second sensor 210B can be electrically connected to the second input terminal 31B of the second RF cable 33B connected to the second RF power supply 30B, which is mounted on the impedance matching device 31. The third sensor 210C is electrically connected to a third path P3 between the third RF power supply 30C and the electrode plate 115. Specifically, the third sensor 210C can be electrically connected to the third input terminal 31C of the third RF cable 33C connected to the third RF power supply 30C, which is mounted on the impedance matching device 31. The fourth sensor 210D is electrically connected to the edge electrode 150. Specifically, the fourth sensor 210D is electrically connected to the connection terminal E4 of the fourth RF cable 33D and the RF rod 117.

[0054] The parameters of a 4-port network can be measured with four sensors 210A, 210B, 210C, and 210D connected to the four ports of the substrate processing device 1. A 4-port network is a linear network with four independent ports, a system in which the voltage and current at each port interact with the other ports to exhibit the network's electrical characteristics. A 4-port network is a system that mathematically represents the voltage-current relationship between ports when voltage and current are applied to each port (Port1, Port2, Port3, Port4). The characteristics of a 4-port network are represented by parameters (e.g., S-parameters, Z-parameters, Y-parameters). The parameters of a 4-port network are used to analyze the transmission, reflection, and voltage-current relationships of electrical signals. In this invention, the first port is the first input terminal 31A of the impedance matching device 31 connected to the first sensor 210A, the second port is the second input terminal 31B of the impedance matching device 31 connected to the second sensor 210B, the third port is the third input terminal 31C of the impedance matching device 31 connected to the third sensor 210C, and the fourth port is the connection terminal E4 of the fourth RF cable 33D connected to the fourth sensor 210D and the RF rod 117. The parameters of the 4-port network are represented as a 4x4 matrix consisting of a total of 16 parameters.

[0055] S-parameters (S ij ) is the signal b output at port i. i Compared to the signal a input at port j of a 4-port network j The ratio of (i,j = 1, 2, 3, 4). For example, S 11It is the ratio of the signal b1 output at the first port to the signal a1 input at the first port, b1 / a1. 12 It is the ratio of the signal b1 output at the first port to the signal a2 input at the second port, b1 / a2. In a 4-port network, the parameter matrix is ​​as follows: Figure 3 As shown. In this invention, the parameters may include an S-parameter, which is the ratio of the signal output at each port to the signal input at a port in the combination of the first sensor 210A to the fourth sensor 210D.

[0056] The Z-parameter is the voltage V output at port i of a 4-port network. i Relative to the current I input at port j j The ratio (i,j = 1, 2, 3, 4). The Z-parameters are related to the impedance of each port. For example, Z... 11 It is the ratio of the voltage V1 output at the first port to the current I1 input at the first port, V1 / I1. 12 V1 / I2 is the ratio of the voltage V1 output at the first port to the current I2 input at the second port. In this invention, the parameter may include a Z-parameter, which is the ratio of the voltage output at each port to the current input at a port in the ports combined with the first sensor 210A to the fourth sensor 210D.

[0057] The first sensor 210A receives an input signal (voltage or current) at its first port, and the first to fourth sensors 210D measure the output signal (voltage or current) at the remaining first to fourth ports. Next, the second sensor 210B receives an input signal (voltage or current) at its second port, and the first to fourth sensors 210A measure the output signal (voltage or current) at the remaining first to fourth ports. The third sensor 210C and the fourth sensor 210D perform the same process. The sensor module 210 can measure parameters at multiple frequencies by changing the frequency sweep within the measurement frequency range. For example, the measurement frequency range can be set to 0 to 200 MHz. The measurement frequency resolution, as the measurement unit, can be set within the measurement frequency range. For example, the frequency resolution can be 0.01 MHz. The sensor module 210 can measure the parameters of a 4-port network that vary with frequency. The measurements performed by the sensor module 210 can be performed with the RF power supplies 30A, 30B, and 30C off.

[0058] Processing module 220 can check the status of substrate processing device 1 using the parameters (parameter matrix) of the 4-port network measured by sensor module 210. Processing module 220 can check the status of RF accessories (e.g., RF power supply, impedance matching device, filter, cable, rod, connector) that generate or transmit RF power in substrate processing device 1 by comparing the parameters of the 4-port network measured by sensor module 210 with predefined parameter reference values.

[0059] The processing module 220 can check the status of accessories in the substrate processing device 1 corresponding to a certain frequency band based on parameters measured within a certain frequency band of the measurement frequency range. For example, a portion of the parameters measured in the 20 to 30 MHz band within the measurement frequency range of 0 to 200 MHz (e.g., S). 44 The parameter S, measured in the 20-30MHz band or at a frequency of 25MHz, is affected by the first RF power supply 30A to ground. 44 It can be used for checking the first RF power supply 30A. The processing module 220 can check the condition of the accessory by comparing parameters measured in a certain frequency band with reference parameters. For example, the processing module 220 can check the parameter S measured in the 20 to 30 MHz frequency band. 44 The distribution is compared with a reference distribution to check the status of the first RF power supply 30A. The processing module 220 can measure parameters S in the 20 to 30 MHz frequency band. 44 When the voltage deviates from the reference range (50 to 70 dB), the first RF power supply 30A is determined to be in an abnormal state. As another example, the processing module 220 can compare parameter S measured at a frequency of 25 MHz. 44 The status of the first RF power supply 30A is checked against the reference parameter values. The processing module 220 can check the parameter S measured at a frequency of 25MHz. 44 When the parameter deviates from the reference parameter range (e.g., 55 to 65 dB), it is determined that the first RF power supply 30A is in an abnormal state.

[0060] The inspection target accessories can be set differently for various frequency bands (or frequencies) within the measurement frequency range. A first RF accessory can be set to correspond to a first frequency within the measurement frequency range, and a second RF accessory can be set to correspond to a second frequency within the measurement frequency range that is different from the first frequency. For example, within the measurement frequency range of 0 to 200 MHz, the second RF cable 33B can be set as the first RF accessory corresponding to a frequency of 90 MHz, and the impedance matching device 31 can be set as the second RF accessory corresponding to a frequency of 150 MHz. The processing module 220 can use a first parameter measured at the first frequency (e.g., 90 MHz) to check the status of the first RF accessory (e.g., the second RF cable 33B), and use a second parameter measured at the second frequency (e.g., 150 MHz) to check the status of the second RF accessory (e.g., the impedance matching device 31).

[0061] like Figure 5 As shown, the S-parameters (e.g., S0) measured at each frequency within the measurement frequency range can be displayed. 44 The distribution curve of the frequency band is used to set the inspection target accessories corresponding to each frequency band or frequency.

[0062] Figure 5 This is a graph showing the ratio of the signal reflected from the connection terminal E4 corresponding to the fourth port to the signal input to the sensor module 210 via frequency scanning. The characteristics of accessories other than the fourth cable 33D can be confirmed in each region of the frequency band.

[0063] For example, accessories corresponding to various frequencies F1, F2, F3, and F4 can be set separately. As an example, the accessory to be inspected corresponding to frequency F1 could be the third RF power supply 30C, the accessory to be inspected corresponding to frequency F2 could be the third RF cable 33C, the accessory to be inspected corresponding to frequency F3 could be the first RF power supply 30A, and the accessory to be inspected corresponding to frequency F4 could be the first RF cable 33A. Furthermore, in Figure 5 Accessories corresponding to frequency bands F5, F6, and F7 can be set separately. Parts of each frequency band can overlap. For example, the accessory to be checked for frequency band F5 could be the impedance matching device 31, the accessory to be checked for frequency band F6 could be the RF rod 117, and the accessory to be checked for frequency band F7 could be the fourth RF cable 33D.

[0064] Through the process described above, four sensors 210A to 210D are electrically connected to four ports in the path that supplies or processes RF power in the substrate processing apparatus 1. The parameters of the 4-port network measured by each sensor 210A to 210D are then measured. The processing module 220 uses these 4-port network parameters to perform inspections of the components (RF components) in the path that supplies or processes RF power in the substrate processing apparatus 1. This allows for uniform management of the quality of RF components in the substrate processing apparatus 1 and maintains consistent process quality.

[0065] Figure 3 This is a flowchart illustrating the inspection method according to the present invention. The inspection method of the substrate processing apparatus 1 according to the present invention includes a step (S310) of measuring the parameters of a 4-port network by a sensor module 210 electrically connected to the substrate processing apparatus 1, and a step (S320) of checking the status of RF accessories that generate or transmit RF power in the substrate processing apparatus 1 based on the parameters of the 4-port network.

[0066] In step S310, sensor module 210 measures the parameters (S-parameters or Z-parameters) of a 4-port network at four points (ports) in substrate processing apparatus 1. First sensor 210A is electrically connected to a first path P1 between first RF power supply 30A and electrode plate 115. Specifically, first sensor 210A is electrically connected to the first input terminal 31A of impedance matching device 31, where a first RF cable 33A connected to the first RF power supply 30A is installed. Second sensor 210B is electrically connected to a second path P2 between second RF power supply 30B and electrode plate 115. Specifically, second sensor 210B is electrically connected to the second input terminal 31B of impedance matching device 31, where a second RF cable 33B connected to the second RF power supply 30B is installed. Third sensor 210C is electrically connected to a third path P3 between third RF power supply 30C and electrode plate 115. Specifically, the third sensor 210C is electrically connected to the third input terminal 31C of the impedance matching device 31, and a third RF cable 33C connected to the third RF power supply 30C is installed at this input terminal. The fourth sensor 210D is electrically connected to the edge electrode 150. Specifically, the fourth sensor 210D is electrically connected to the connection terminal E4 of the fourth RF cable 33D and the RF rod 117. In this way, the four sensors 210A, 210B, 210C, and 210D can be connected to the four ports of the substrate processing device 1 to measure the parameters of the 4-port network.

[0067] The first sensor 210A applies an input signal (voltage or current) at its first port, and the first sensors 210A through the fourth sensor 210D measure the output signal (voltage or current) at the remaining second through fourth ports. Then, the second sensor 210B applies an input signal at its second port and similarly measures the output signal at the remaining ports; the third sensor 210C and the fourth sensor 210D perform the same process.

[0068] Sensor module 210 can measure parameters at various frequencies by performing a frequency sweep that changes the frequency within the measurement frequency range. For example, the measurement frequency range can be set to 0 to 200 MHz, and the frequency resolution, as the measurement unit, can be set to 0.01 MHz. In this way, sensor module 210 can precisely measure the parameters of a 4-port network that vary with frequency.

[0069] In step S320, the processing module 220 checks the status of RF components that generate or transmit RF power in the substrate processing apparatus 1 based on the parameters of the 4-port network. The processing module 220 can diagnose the status of the substrate processing apparatus 1 using the parameters (parameter matrix) of the 4-port network measured in the sensor module 210. Specifically, the processing module 220 can evaluate the status of RF components, including RF power supplies (e.g., impedance matching devices, filters, cables, rods, connectors, etc.), by comparing the measured parameters of the 4-port network with predefined reference values.

[0070] Processing module 220 can diagnose the condition of components sensitive to a specific frequency band within the measurement frequency range based on parameters measured in that band. For example, the 20-30MHz band within the 0-200MHz measurement frequency range is significantly affected by the first RF power supply 30A, and the condition of the first RF power supply 30A can be analyzed using parameters measured in this band. Processing module 220 can precisely diagnose the condition of RF components by comparing the parameter distribution in a specific frequency band with a reference distribution, or by directly comparing with reference parameter values.

[0071] This embodiment and the accompanying drawings are merely illustrative of a portion of the technical concept included in this invention. It is obvious that variations and specific embodiments that can be readily derived by those skilled in the art within the scope of the technical concept included in the specification and drawings of this invention are all included within the scope of the claims of this invention.

[0072] Therefore, the concept of the present invention should not be limited to the illustrated embodiments, not only to the appended claims, but also to any equivalent or modified versions thereof.

Claims

1. An inspection apparatus for inspecting the electrical characteristics of a substrate processing apparatus utilizing plasma, the inspection apparatus comprising: The sensor module is electrically connected to the RF path that transmits RF power to measure the parameters of a 4-port network; as well as The processing module checks the status of RF accessories that generate or transmit RF power in the substrate processing device based on the parameters of the 4-port network. The sensor module includes: The first sensor is electrically connected via a first path between a first RF power source supplying RF power at a first frequency and an electrode plate of a substrate support member supporting the substrate. The second sensor is electrically connected via a second path between a second RF power supply that provides RF power at a second frequency lower than the first frequency and the electrode plate. The third sensor is electrically connected via a third path between a third RF power source supplying RF power at a third frequency lower than the second frequency and the electrode plate; and The fourth sensor is electrically connected to an edge electrode disposed on the edge of the substrate support member.

2. The inspection device according to claim 1, wherein, The first RF power supply, the second RF power supply, and the third RF power supply are electrically connected to the electrode plate via an impedance matching device. The first sensor is electrically connected to the first input terminal of the first RF cable, which is installed in the impedance matching device and connected to the first RF power supply. The second sensor is electrically connected to the second input terminal of the second RF cable, which is installed in the impedance matching device and connected to the second RF power supply. The third sensor is electrically connected to the third input terminal of the third RF cable installed in the impedance matching device and connected to the third RF power supply.

3. The inspection device according to claim 1, wherein, The edge electrode is electrically connected to the edge impedance control circuit via an RF rod disposed inside the cavity and a fourth RF cable disposed outside the cavity. The fourth sensor is electrically connected to the connection end of the fourth RF cable and the RF rod.

4. The inspection device according to claim 1, wherein, The sensor module measures the parameters at multiple frequencies by changing the frequency of the measurement frequency within the measurement frequency range.

5. The inspection device according to claim 4, wherein, The processing module checks the status of the RF accessories corresponding to the specified frequency band in the substrate processing device based on parameters measured in a portion of the frequency band within the measured frequency range.

6. The inspection device according to claim 5, wherein, The processing module checks the condition of the accessory by comparing the parameters measured in the specified frequency band with the reference parameters.

7. The inspection device according to claim 5, wherein, A first RF accessory is configured to correspond to a first frequency within the measured frequency range, and a second RF accessory is configured to correspond to a second frequency within the measured frequency range that is different from the first frequency. The processing module checks the status of the first RF accessory using a first parameter measured at the first frequency, and checks the status of the second RF accessory using a second parameter measured at the second frequency.

8. The inspection device according to claim 1, wherein, The parameters for a 4-port network include: The S-parameter is the ratio of the signal output from each port to the signal input to a port in connection with the first to the fourth sensors.

9. An inspection method for inspecting the electrical characteristics of a substrate processing apparatus utilizing plasma, the inspection method comprising: The steps for determining the parameters of a 4-port network by means of a sensor module electrically connected to the RF path that transmits RF power; as well as The step of checking the status of RF accessories that generate or transmit RF power in the substrate processing apparatus based on the parameters of the 4-port network. The sensor module includes: The first sensor is electrically connected via a first path between a first RF power source supplying RF power at a first frequency and an electrode plate of a substrate support member supporting the substrate. The second sensor is electrically connected via a second path between a second RF power supply that provides RF power at a second frequency lower than the first frequency and the electrode plate. The third sensor is electrically connected via a third path between a third RF power source supplying RF power at a third frequency lower than the second frequency and the electrode plate; and The fourth sensor is electrically connected to an edge electrode disposed on the edge of the substrate support member.

10. The inspection method according to claim 9, wherein, The first RF power supply, the second RF power supply, and the third RF power supply are electrically connected to the electrode plate via an impedance matching device. The first sensor is electrically connected to the first input terminal of the first RF cable, which is installed in the impedance matching device and connected to the first RF power supply. The second sensor is electrically connected to the second input terminal of the second RF cable, which is installed in the impedance matching device and connected to the second RF power supply. The third sensor is electrically connected to the third input terminal of the third RF cable installed in the impedance matching device and connected to the third RF power supply.

11. The inspection method according to claim 9, wherein, The edge electrode is electrically connected to the edge impedance control circuit via an RF rod disposed inside the cavity and a fourth RF cable disposed outside the cavity. The fourth sensor is electrically connected to the connection end of the fourth RF cable and the RF rod.

12. The inspection method according to claim 9, wherein, The steps for determining the parameters of the 4-port network include: The step of measuring the parameter at multiple frequencies by changing the frequency scan of the measurement frequency within the measurement frequency range.

13. The inspection method according to claim 11, wherein, The step of checking the status of the substrate processing apparatus includes: The step of checking the status of the accessories in the substrate processing apparatus corresponding to the specified frequency band based on parameters measured in a portion of the specified frequency range.

14. The inspection method according to claim 13, wherein, The step of checking the status of the substrate processing apparatus includes: The step of checking the condition of the accessory by comparing the parameters measured in the specified frequency band with the reference parameters.

15. The inspection method according to claim 13, wherein, A first RF accessory is configured to correspond to a first frequency within the measured frequency range, and a second RF accessory is configured to correspond to a second frequency within the measured frequency range that is different from the first frequency. The step of checking the status of the substrate processing apparatus includes: The steps are as follows: checking the status of the first RF accessory using a first parameter measured at the first frequency, and checking the status of the second RF accessory using a second parameter measured at the second frequency.

16. The inspection method according to claim 9, wherein, The parameters include: The S-parameter is the ratio of the signal output from each port to the signal input to a port in connection with the first to the fourth sensors.

17. A substrate processing apparatus utilizing plasma, the substrate processing apparatus comprising: The cavity forms the processing space for the substrate; A substrate support member includes: a dielectric plate supporting the substrate from below; an electrode plate disposed below the dielectric plate; and an edge electrode disposed outside the electrode plate. A first RF power source supplies RF power of a first frequency to the electrode plate via a first RF cable; The second RF power supply supplies RF power at a second frequency higher than the first frequency to the electrode plate via a second RF cable; The third RF power supply supplies RF power at a third frequency higher than the second frequency to the electrode plate via a third RF cable; An impedance matching device is connected between the first RF power supply, the second RF power supply, the third RF power supply, and the electrode plate; An edge impedance control circuit is connected to the edge electrode via an RF rod disposed inside the cavity and a fourth RF cable disposed outside the cavity; and The inspection device inspects the electrical characteristics of the substrate processing apparatus. The inspection device includes: The sensor module is electrically connected to the RF path for transmitting RF power to measure parameters of a 4-port network; and The processing module checks the status of RF accessories that generate or transmit the RF power in the substrate processing device based on the parameters of the 4-port network. The sensor module includes: The first sensor is electrically connected to the first input end of the first RF cable installed in the impedance matching device and connected to the first RF power supply. The second sensor is electrically connected to the second input end of the second RF cable that is installed in the impedance matching device and connected to the second RF power supply. The third sensor is electrically connected to the third input terminal of the third RF cable installed in the impedance matching device and connected to the third RF power supply; and The fourth sensor is electrically connected to the connection end of the fourth RF cable and the RF rod.

18. The substrate processing apparatus according to claim 17, wherein, The sensor module measures the parameters at multiple frequencies by changing the frequency of the measurement frequency within the measurement frequency range.

19. The substrate processing apparatus according to claim 18, wherein, The processing module compares the parameters measured in a portion of the frequency band within the measured frequency range with the reference parameters to check the status of the accessories corresponding to the portion of the frequency band.

20. The substrate processing apparatus according to claim 17, wherein, A first RF accessory is configured to correspond to a first frequency within the measured frequency range, and a second RF accessory is configured to correspond to a second frequency within the measured frequency range that is different from the first frequency. The processing module checks the status of the first RF accessory using a first parameter measured at the first frequency, and checks the status of the second RF accessory using a second parameter measured at the second frequency.

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