Radio frequency front-end module and electronic device

Abstract

The application discloses a radio frequency front-end module and electronic equipment. The radio frequency front-end module comprises a power amplifier chip, a transformer module and a filter. The transformer module comprises a transformer, and the transformer comprises a primary side and a secondary side which are coupled. The secondary side is provided with a first end for grounding and a second end for connecting the filter. The first end and the second end are located on the same side of a specified axis. The specified axis is the central axis of the power amplifier chip, and the specified axis extends along a first direction. The secondary side comprises a target connecting section extending along a second direction. The target connecting section passes through the specified axis and is connected to the first end. The filter is arranged in the first direction and is spaced apart from the target connecting section. When the filter is connected to the secondary side of the transformer, the filter can be arranged in the first direction and is adjacent to the part of the secondary side for grounding (i.e. the target connecting section). The coupling between the transformer and the filter can be reduced, so that the working performance of the filter is ensured.

Description

Technical Field

[0001] This application relates to the field of radio frequency technology, and more specifically, to a radio frequency front-end module and electronic device. Background Technology

[0002] Currently, radio frequency (RF) front-end modules are widely used in wireless communication, the Internet of Things (IoT), smart homes, and other fields. They can process RF signals (e.g., power amplification, modulation and demodulation) to complete the tasks of receiving and transmitting RF signals.

[0003] In existing RF front-end modules, the output transformer (e.g., output balun) in the transmit link usually has a certain coupling with the filter, which in turn affects the filter's performance. Summary of the Invention

[0004] This application provides a radio frequency front-end module and an electronic device.

[0005] According to a first aspect of this application, an embodiment provides a radio frequency (RF) front-end module, comprising a substrate and a power amplifier chip, a transformer module, and a filter sequentially disposed on the substrate along a first direction. The transformer module includes a transformer with a coupled primary and secondary side. The primary side is connected to the output terminal of the power amplifier chip. The secondary side has a first terminal for grounding and a second terminal for connecting to the filter, the first and second terminals being located on the same side of a designated axis. The designated axis is the central axis of the power amplifier chip and extends along the first direction. The secondary side includes a target connection segment extending along a second direction, passing through the designated axis and connecting to the first terminal. The second direction intersects the first direction. The filter and the target connection segment are spaced apart along the first direction.

[0006] This application provides a radio frequency (RF) front-end module, which may include a power amplifier chip, a transformer module, and a filter. The secondary side of the transformer has a first end for grounding and a second end for connecting to the filter. The secondary side may include a target connection segment extending along a second direction. Here, the "target connection segment" can be understood as the grounding portion of the transformer's secondary side structure. Specifically, the target connection segment passes through a designated axis and connects to the first end. The "designated axis" is the central axis of the power amplifier chip, extending along the first direction. Therefore, in this application, the secondary side of the transformer does not employ a symmetrical winding method about the designated axis, but rather an asymmetrical winding method.

[0007] When the filter is connected to the secondary side of the transformer, the filter can be spaced apart from the grounded portion of the secondary side (i.e., the target connection section) in the first direction. On one hand, since the target connection section is grounded, the RF signal strength within it is relatively weak. When the filter and target connection section are placed close together, this arrangement reduces the coupling between the transformer and the filter, ensuring the filter's performance. On the other hand, this arrangement also reduces the distance between the transformer and the filter, facilitating miniaturization of the RF front-end module.

[0008] According to a second aspect of this application, embodiments of this application also provide a radio frequency (RF) front-end module, which includes a substrate and a power amplifier chip, a transformer module, and a filter disposed on the substrate. The transformer module includes a transformer, a first capacitor, and a second capacitor. The transformer includes a primary side and a secondary side coupled together. The primary side is connected to the output terminal of the power amplifier chip; the secondary side has a first terminal for grounding and a second terminal for connecting to the filter. One end of the first capacitor is connected to the first terminal, and the other end of the first capacitor is grounded. One end of the second capacitor is connected to the second terminal, and the other end of the second capacitor is grounded. The first capacitor and the second capacitor are located on the same side of a designated axis, which is the central axis of the power amplifier chip and extends along a first direction. The filter and the transformer are spaced apart in the first direction, with the first capacitor located on the side of the second capacitor furthest from the filter.

[0009] This application provides an RF front-end module, which may include a power amplifier chip, a transformer module, and a filter. The secondary side of the transformer has a first terminal for grounding and a second terminal for connecting to the filter. A first capacitor connected to the first terminal and a second capacitor connected to the second terminal are both located on the same side of a designated axis, where the "designated axis" is the central axis of the power amplifier chip, extending along a first direction.

[0010] Since the first capacitor and the second capacitor are located on the same side of the specified axis, it indicates that the first end and the second end of the secondary side are also located on the same side of the specified axis. Therefore, the secondary side of the transformer in this application does not adopt a symmetrical winding method about the specified axis, but rather an asymmetrical winding method.

[0011] Specifically, the first capacitor is located on the side of the second capacitor that is far away from the filter. In other words, the grounding capacitor (i.e., the first capacitor) in the transformer module is located far away from the filter. By optimizing the connection position of the grounding capacitor, the coupling between the grounding capacitor and the filter can be reduced to ensure the working performance of the filter.

[0012] According to a third aspect of this application, embodiments of this application also provide a radio frequency (RF) front-end module, which includes a substrate and a power amplifier chip, a transformer module, and a filter disposed on the substrate. The power amplifier chip includes a first output terminal and a second output terminal. The transformer module includes a transformer with a coupled primary side and a secondary side. The primary side is connected between the first and second output terminals. The secondary side has a first terminal for grounding and a second terminal for connecting the filter. The first and second terminals are located on the same side of a designated axis, which is the central axis of the power amplifier chip and extends along a first direction. The filter and the transformer are spaced apart along the first direction.

[0013] This application provides a radio frequency (RF) front-end module, which may include a power amplifier chip, a transformer module, and a filter. The first terminal of the secondary side used for grounding and the second terminal used for connecting the filter are both located on the same side of a designated axis. Therefore, the secondary side of the transformer in this application does not employ a symmetrical winding method about the designated axis, but rather an asymmetrical winding method. By adjusting the winding direction of the secondary side, the coupling between the transformer and the filter can be reduced, thereby ensuring the filter's operating performance.

[0014] According to a fourth aspect of this application, embodiments of this application also provide an electronic device, which includes the radio frequency front-end module described above. Attached Figure Description

[0015] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0016] Figure 1 This is a schematic diagram of the structure of the radio frequency front-end module provided in the embodiments of this application.

[0017] Figure 2 yes Figure 1 The circuit structure diagram corresponding to the RF front-end module shown is shown.

[0018] Figure 3 yes Figure 1 The diagram shows a cross-sectional view of the substrate in the RF front-end module.

[0019] Figure 4 yes Figure 1 The diagram shows the connection between the power amplifier chip and the primary side in the RF front-end module.

[0020] Figure 5 yes Figure 1The diagram shows a structural schematic of the primary side in the RF front-end module.

[0021] Figure 6 yes Figure 5 The diagram shows the structure of the body segment in the original edge.

[0022] Figure 7 yes Figure 1 The diagram shows another structural schematic of the primary side in the RF front-end module.

[0023] Figure 8 This is another structural schematic diagram of the radio frequency front-end module provided in the embodiments of this application.

[0024] Figure 9 This is a schematic diagram of the structure of the electronic device provided in the embodiments of this application. Detailed Implementation

[0025] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are merely some embodiments of the present application, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present application without creative effort are within the scope of protection of the present application.

[0026] This application provides a radio frequency (RF) front-end module 100, which integrates two or more discrete components such as RF switches, low-noise amplifiers, filters, duplexers, and power amplifiers into a single independent module, thereby improving integration and hardware performance while miniaturizing the size. Specifically, the RF front-end module 100 is suitable for installation in electronic devices, where it is used to receive and transmit RF signals to realize the wireless communication function of the electronic device.

[0027] Please see Figure 1 and Figure 2 The radio frequency front-end module 100 may include a substrate 10 and a power amplifier chip 30, a transformer module 50, and a filter 70 sequentially disposed on the substrate 10 along a first direction X. The transformer module 50 may include a transformer 51, which includes a primary side 52 and a secondary side 60 coupled together. The primary side 52 is connected to the output terminal 320 of the power amplifier chip 30. The secondary side 60 has a first end 601 for grounding and a second end 603 for connecting to the filter 70. The first end 601 and the second end 603 are located on the same side of a designated axis L. The designated axis L is the central axis of the power amplifier chip 30 and extends along the first direction X. Therefore, in this embodiment, the secondary side 60 of the transformer 51 is not symmetrically wound about the designated axis L, but rather uses an asymmetrical winding method.

[0028] The secondary side 60 may include a target connection segment 605 extending along the second direction Y, which passes through a designated axis L and connects to the first end 601. Here, "target connection segment 605" can be understood as the grounding portion of the secondary side 60 of the transformer 51, which may be located in the outer ring region of the secondary side 60 to define a portion of the outer contour of the secondary side 60. "Target connection segment 605 passes through the designated axis L" can be understood as the target connection segment 605 intersecting the designated axis L. The second direction Y intersects with the first direction X. In some possible embodiments, the second direction Y and the first direction X may be perpendicular. For example, the first direction X may be the length direction of the substrate 10, and the second direction Y may be the width direction of the substrate 10. Alternatively, the first direction X may be the width direction of the substrate 10, and the second direction Y may be the length direction of the substrate 10.

[0029] The filter 70 and the target connection segment 605 are spaced apart in the first direction X. Therefore, when the filter 70 is connected to the secondary side 60 of the transformer 51, the filter 70 and the grounding portion of the secondary side 60 (i.e., the target connection segment 605) can be spaced apart in the first direction X. On the one hand, since the target connection segment 605 is grounded, it indicates that the RF signal strength in the target connection segment 605 is relatively weak. When the filter 70 and the target connection segment 605 are placed close together, the above arrangement can reduce the coupling between the transformer 51 and the filter 70, thereby ensuring the operating performance of the filter 70. On the other hand, the above arrangement can also reduce the spacing between the transformer 51 and the filter 70, which is beneficial for achieving miniaturization of the RF front-end module 100.

[0030] It's important to note that in related technologies, the transformer can be a differential-to-single-ended balun structure, and the power amplifier chip can include a differential amplifier circuit for transmitting RF differential signals. To ensure the signal balance of the RF differential signals, the secondary side of the transformer is wound symmetrically about a designated axis L. In this case, to reduce the coupling between the transformer and the filter, developers typically place a certain distance between them, usually greater than or equal to 120μm. This results in wasted substrate layout space and is detrimental to the miniaturization design of the RF front-end module. Furthermore, if developers reduce the distance between the transformer and the filter, the presence of the transformer will worsen the filter's out-of-band rejection and introduce some disturbance to the filter's in-band impedance, thus affecting the filter's performance.

[0031] To address the aforementioned problems, the inventors of this application adjust the winding direction of the secondary side 60, employing an asymmetrical winding arrangement about a specified axis L. This allows the filter 70 to be spaced apart from the grounding portion of the secondary side 60, thereby reducing the coupling between the transformer 51 and the filter 70 and ensuring the filter's performance. Specifically, in this embodiment, the minimum distance between the filter 70 and the target connection segment 605 in the first direction X is greater than or equal to 50 μm and less than or equal to 100 μm. For example, the minimum distance can be 50 μm, 60 μm, 80 μm, 100 μm, etc. Therefore, in this embodiment, the filter 70 can be positioned "closely" to the transformer 51. Compared to related technologies, the distance between the filter 70 and the transformer 51 is smaller, saving layout space on the substrate 10 while ensuring the filter's performance.

[0032] In some possible embodiments, the operating frequency band of the RF front-end module 100 is greater than or equal to 3.3 GHz and less than or equal to 5 GHz. That is, the operating frequency band of the RF front-end module 100 is a high-frequency band. In this case, the coupling effect of the filter 70 to the transformer 51 is more sensitive. Therefore, this application reduces the coupling effect between the transformer 51 and the filter 70 by adjusting the winding direction of the secondary side 60 and adopting an asymmetrical winding method, thereby ensuring the normal operation of the filter 70. Specifically, the operating frequency band of the RF front-end module 100 can be the N77 band or the N79 band.

[0033] The specific implementation method of the radio frequency front-end module 100 is described below.

[0034] In this embodiment, the substrate 10 is generally rectangular and serves to fix and support the components (e.g., power amplifier chip 30, transformer module 50, and filter 70) in the radio frequency front-end module 100. Specifically, the substrate 10 can be a copper-clad laminate. By performing hole processing, chemical copper plating, electroplating, etching, and other processes on the copper-clad laminate, circuits can be printed on the surface of the substrate 10.

[0035] In some possible embodiments, please refer to Figure 3 The substrate 10 may include a substrate 160 and multiple metal layers 120, with the multiple metal layers 120 sequentially stacked on the substrate 160. The substrate 160 may be a silicon substrate, serving to support the multiple metal layers 120. The metal layers 120 may be copper layers, used for laying out traces (e.g., equivalent traces for inductors, equivalent traces for primary side 52 and secondary side 60, etc.) or for setting ground metal plates. Furthermore, the top metal layer 120 may also be used to carry electronic components (e.g., chips, surface-mount capacitors, etc.).

[0036] exist Figure 3In the illustrated embodiment, a dielectric layer 140 is provided between each pair of adjacent metal layers 120 to serve as an isolation layer. Furthermore, the dielectric layer 140 may also have metal vias (not shown) to connect traces located on different metal layers 120.

[0037] In this embodiment, the power amplifier chip 30 is disposed on the substrate 10. For example, the power amplifier chip 30 can be connected to the substrate 10 using a flip-chip process or a bonding process. Specifically, the power amplifier chip 30 can be a heterojunction bipolar transistor (HBT) chip, which can integrate a power amplifier (not shown in the figure) for amplifying the power of the input radio frequency signal.

[0038] In some possible embodiments, the power amplifier employs a differential architecture, which converts the input RF signal into a pair of differential RF signals for output. Please refer again. Figure 1 The output terminal 320 of the power amplifier chip 30 may include a first output terminal 3210 and a second output terminal 3230, which are used to output a pair of radio frequency differential signals. In some possible embodiments, the first output terminal 3210 and the second output terminal 3230 may be located on the same side of the power amplifier chip 30 and symmetrically arranged about a specified axis L to ensure the signal balance of the radio frequency differential signals during output. In other possible embodiments, the power amplifier may also adopt a single-ended architecture. This embodiment does not specifically limit the implementation method of the power amplifier.

[0039] In this embodiment, transformer 51 is connected to the output terminal 320 of power amplifier chip 30, and is used to perform impedance conversion on the radio frequency signal output by power amplifier chip 30. Figure 1 In the illustrated embodiment, the transformer 51 and the power amplifier chip 30 are arranged sequentially in the first direction X. Specifically, the transformer 51 may include a primary side 52 and a secondary side 60 coupled together.

[0040] In some possible embodiments, the power amplifier in power amplifier chip 30 employs a differential architecture, then transformer 51 can be a differential-to-single-ended balun structure, which also performs balanced-to-unbalanced conversion, that is, converting a pair of RF differential signals into a single RF single-ended signal. See also... Figure 3 and Figure 4The primary side 52 is connected between the first output terminal 3210 and the second output terminal 3230, and can be symmetrically arranged about a specified axis L to ensure the signal balance of the RF differential signal. In some other possible embodiments, the power amplifier in the power amplifier chip 30 adopts a single-ended architecture, with one end of the primary side 52 connected to the output terminal 320 of the power amplifier chip 30, and the other end of the primary side 52 grounded. In the following, the transformer 51 is a differential-to-single-ended balun structure as an example for detailed explanation.

[0041] Specifically, the substrate 10 may include a third metal layer 1250 located on the top layer. That is, the third metal layer 1250 refers to the metal layer 120 among the plurality of metal layers 120 that has the largest distance from the substrate 160 in the substrate thickness direction. The original edge 52 is wrapped around the third metal layer 1250 to define the surrounding area K.

[0042] exist Figure 4 In the illustrated embodiment, the transformer module 50 may further include a third capacitor 58, one end of which is connected to the midpoint of the primary side 52, and the other end is grounded. In other words, the third capacitor 58 is a virtual ground matching capacitor, which can adjust the impedance to ensure efficient and stable transmission of radio frequency signals.

[0043] Specifically, the third capacitor 58 can be a surface-mount device (SMD) capacitor, which can be mounted on the surface of the substrate 10. Therefore, in this embodiment, the third capacitor 58 can be directly connected to the primary edge 52 wrapped around the third metal layer 1250, making the connection between the third capacitor 58 and the primary edge 52 simpler and more compact. In addition, the third capacitor 58 can be disposed within the surrounding area K defined by the primary edge 52 and located on a designated axis L, thereby saving layout space on the substrate 10.

[0044] In some other possible embodiments, the primary edge 52 may also be disposed around the metal layer 120 located in the middle of the substrate, that is, other metal layers 120 other than the third metal layer 1250. In this case, the third capacitor 58 can be connected to the midpoint of the primary edge 52 through a metal via, which is not limited in this embodiment.

[0045] In this embodiment, the secondary side 60 is wound on the substrate 10. The secondary side 60 and the primary side 52 are wound on different metal layers 120, and the projection of the secondary side 60 in the substrate thickness direction can at least partially overlap with the primary side 52 to achieve coupling between the secondary side 60 and the primary side 52. Specifically, the secondary side 60 and the primary side 52 can be wound on two adjacent metal layers 120 to improve the coupling coefficient between them. In some possible embodiments, the number of turns of the secondary side 60 is greater than or equal to 2. That is, when the primary side 51 is wound with a single turn, the turns ratio between the primary side 51 and the secondary side 60 can be 1:2, 1:2.5, 1:3, etc., thereby achieving a larger impedance conversion ratio.

[0046] Please see Figure 5 and Figure 6 The secondary side 60 may include a first connecting segment 610, a body segment 630, and a second connecting segment 650 connected sequentially, wherein the body segment 630 is wound around the substrate 10 and may include a target connecting segment 605. Specifically, in Figure 5 In the illustrated embodiment, the target connecting segment 605 can be considered as a part of the structure of the body segment 630 used to connect the first connecting segment 610. It is easy to understand that the phrase "sequentially connected" above can be interpreted as the first connecting segment 610, the body segment 630, and the second connecting segment 650 being connected in series to form the secondary side 60, and starting from the first connecting segment 610, winding around the substrate 10 twice in a counter-clockwise direction. Of course, in some other possible embodiments, it is also possible to start from the first connecting segment 610 and wind around the substrate 10 twice in a clockwise direction. This embodiment does not limit the specific winding method of the secondary side 60.

[0047] Specifically, one end of the body segment 630 is connected to the first end 601 via the first connecting segment 610, and the other end of the body segment 630 is connected to the second end 603 via the second connecting segment 650. It is easy to understand that the "first end 601" here can be considered as the end of the first connecting segment 610 not connected to the body segment 630, and the "second end 603" here can be considered as the end of the second connecting segment 650 not connected to the body segment 630. The first connecting segment 610 and the second connecting segment 650 are located on the same side of the specified axis L.

[0048] exist Figure 5In the illustrated embodiment, the first connecting segment 610 extends along the second direction Y and is connected to the first end 601. Therefore, in this embodiment, both the first connecting segment 610 and the target connecting segment 605 extend along the second direction Y. Since both the first connecting segment 610 and the target connecting segment 605 can be considered as the grounding portion of the secondary side 60, when the filter 70 and the target connecting segment 605 are spaced apart in the first direction X, the spacing between the filter 70 and the secondary side 60 can be shortened while reducing the coupling effect of the secondary side 60 on the filter 70.

[0049] exist Figure 5 In the illustrated embodiment, the second connecting segment 650 extends along the first direction X and is connected to the second end 603. Specifically, the second connecting segment 650 and the first connecting segment 610 are located in different metal layers 120, and the projection of the second connecting segment 650 in the substrate thickness direction partially overlaps with the first connecting segment 610.

[0050] Please refer to it again. Figure 3 The substrate 10 may include a first metal layer 1210 and a second metal layer 1230 stacked in phase. For example, a third metal layer 1250, a first metal layer 1210, and a second metal layer 1230 may be sequentially stacked on the substrate 160. Of course, in some other possible embodiments, the third metal layer 1250, the second metal layer 1230, and the first metal layer 1210 may be sequentially stacked on the substrate 160. This embodiment does not limit the stacking order of the multiple metal layers 120.

[0051] The specific implementation methods of the first connecting segment 610, the body segment 630, and the second connecting segment 650 are described below.

[0052] exist Figure 6 In the embodiment shown, the body segment 630 may include a first sub-body segment 6320, a second sub-body segment 6340 and a third sub-body segment 6360 connected in sequence. The first sub-body segment 6320 may include a target connection segment 605, which can be regarded as a part of the structure of the first sub-body segment 6320 used to connect the first connection segment 610.

[0053] Specifically, a first sub-body segment 6320 and a third sub-body segment 6360 are disposed on the first metal layer 1210, and a second sub-body segment 6340 is disposed on the second metal layer 1230. One end of the first sub-body segment 6320 is connected to the first end 601 via a first connecting segment 610, and starting from this end, the first sub-body segment 6320 is wound counterclockwise at least one and a half turns. The other end of the first sub-body segment 6320 is located within the winding area defined by the first sub-body segment 6320, and is connected to one end of the second sub-body segment 6340 via a metal via disposed on the substrate 10. The projection of the second sub-body segment 6340 in the substrate thickness direction partially overlaps with that of the first sub-body segment 6320. The third sub-body segment 6360 is located outside the winding area defined by the first sub-body segment 6320. One end of the third sub-body segment 6360 is connected to the other end of the second sub-body segment 6340 through a metal via provided on the substrate 10. The other end of the third sub-body segment 6360 is connected to the second end 603 through the second connecting segment 650.

[0054] Please refer to it again. Figure 5 The first sub-body segment 6320, the third sub-body segment 6360, and the second connecting segment 650 are all disposed on the first metal layer 1210, and the first connecting segment 610 is disposed on the second metal layer 1230. One end of the first sub-body segment 6320 and the first connecting segment 610 are connected through a metal via disposed on the substrate 10, and the third sub-body segment 6360 and the second connecting segment 650 are directly connected. It should be noted that the third sub-body segment 6360 and the second connecting segment 650 may belong to the same metal trace. In this embodiment, for the convenience of describing the specific winding method of the secondary side 60, a part of the structure used to connect the filter 70 is referred to as the "second connecting segment", and another part of the structure used to connect the second sub-body segment 6340 is referred to as the "third sub-body segment".

[0055] Please see Figure 7 The first sub-body segment 6320, the third sub-body segment 6360, and the first connecting segment 610 are all disposed on the first metal layer 1210, and the second connecting segment 650 is disposed on the second metal layer 1230. The first sub-body segment 6320 and the first connecting segment 610 are directly connected, and the third sub-body segment 6360 and the second connecting segment 650 are connected through metal vias disposed on the substrate 10. It should be noted that the first sub-body segment 6320 and the first connecting segment 610 can belong to the same metal trace as a whole. In this embodiment, for the convenience of describing the specific winding method of the secondary side 60, the part of the structure used for grounding is referred to as the "first connecting segment", and the other part of the structure used for connecting the second sub-body segment 6340 is referred to as the "first sub-body segment".

[0056] What is not difficult to understand here is that, compared to Figure 7 The implementation shown, due to Figure 5 The third sub-body segment 6360 and the second connecting segment 650 are both integral parts of the same metal trace, which can ensure the continuity of the RF signal output to the filter 70, so as to ensure the signal quality of the RF signal.

[0057] Please refer to it again. Figure 1 The transformer module 50 may further include a first capacitor 54 and a second capacitor 56. The first capacitor 54 and the second capacitor 56 can respectively adjust the impedance to ensure efficient and stable transmission of radio frequency signals. One end of the first capacitor 54 is connected to the first terminal 601, and the other end is grounded. One end of the second capacitor 56 is connected to the second terminal 603, and the other end is grounded. Specifically, the first capacitor 54 and the second capacitor 56 are located on the same side of the designated axis L to make the overall structure of the transformer module 50 more compact. As one embodiment, the first capacitor 54 and the second capacitor 56 can both be surface-mount capacitors, which can be mounted on the surface of the substrate 10 to make the layout of the transformer module 50 more flexible.

[0058] In one implementation, the first capacitor 54 and the second capacitor 56 are arranged side by side in the first direction X, with the first capacitor 54 located on the side of the second capacitor 56 away from the filter 70. That is, the grounding capacitor (i.e., the first capacitor 54) in the transformer module 50 is located away from the filter 70. This embodiment optimizes the connection position of the grounding capacitor to reduce the coupling between the grounding capacitor and the filter 70, thereby ensuring the working performance of the filter 70.

[0059] In this embodiment, filter 70 is used to filter the radio frequency signal output by transformer 51 to ensure the transmission quality of the radio frequency signal and reduce the interference of harmonic signals. Specifically, filter 70 is an LC filter. For example, filter 70 can adopt a CLLC type architecture, CLCL type architecture, etc. This embodiment does not limit the specific implementation of filter 70.

[0060] exist Figure 1 In the illustrated embodiment, the RF front-end module 100 may further include a first chip 720 disposed on the substrate 10, and a filter 70 disposed within the first chip 720. Therefore, by integrating the filter 70 within the first chip 720, this embodiment can improve the overall integration of the RF front-end module 100. Specifically, the first chip 720 may be an integrated passive device (IPD) chip or a low-temperature co-fired ceramic (LTCC) chip. The first chip 720 may be connected to the substrate 10 using a flip-chip process or a bonding process.

[0061] In some possible embodiments, the target connection segment 605 and the filter 70 are disposed on different metal layers 120. Specifically, when the primary side 52 of the transformer 51 is wound on the third metal layer 1250 located on the top layer of the substrate, the secondary side 60 of the transformer 51 can be wound on the metal layer 120 (e.g., the first metal layer 1210) located in the middle of the substrate, and the first chip 720 is connected to the surface of the substrate 10, so that the dielectric layer 140 located between the different metal layers 120 can also play a role in reducing the coupling between the secondary side 60 and the filter 70, thereby ensuring the normal operation of the filter 70.

[0062] In some possible embodiments, the power amplifier chip 30, transformer 51, and first chip 720 are arranged sequentially in the first direction X, such that the first chip 720 and the target connection segment 605 are spaced apart in the first direction X. Figure 1 In the illustrated embodiment, the first chip 720 is generally rectangular and may include a first side 7201, a second side 7203, a third side 7205, and a fourth side 7207. The third side 7205 and the first side 7201 are disposed opposite each other in a first direction X, and the fourth side 7207 and the second side 7203 are disposed opposite each other in a second direction Y. The first side 7201, the second side 7203, the third side 7205, and the fourth side 7207 are sequentially connected to define the outer contour of the first chip 720.

[0063] Specifically, the first side 7201 and the target connection segment 605 are spaced apart in the first direction X, and the first side 7201 extends along the second direction Y. The "minimum spacing between the filter 70 and the target connection segment 605 in the first direction X" mentioned above can be understood as the minimum spacing between the first side 7201 and the target connection segment 605 in the first direction X. The second side 7203 and the second end 603 of the secondary side 60 are located on the same side of the specified axis L, and the second side 7203 extends along the first direction X. The third side 7205 is parallel to the first side 7201, and the fourth side 7207 is parallel to the second side 7203.

[0064] exist Figure 1In the illustrated embodiment, the first chip 720 has an input terminal 7210, which is connected to the second end 603 of the secondary side 60. This input terminal 7210 can also be understood as the input terminal of the filter 70. The input terminal 7210 is disposed adjacent to both the first side 7201 and the second side 7203. "Adjacent" here can be understood as: the input terminal 7210 is disposed on the first side 7201, or the distance between the input terminal 7210 and the first side 7201 is less than or equal to a preset distance, for example, the preset distance can be 10μm, 20μm, etc.; the input terminal 7210 is disposed on the second side 7203, or the distance between the input terminal 7210 and the second side 7203 is less than or equal to a preset distance, for example, the preset distance can be 10μm, 20μm, etc. Therefore, in this embodiment, the input terminal 7210 of the first chip 720 is located at the edge corner of the first chip 720, which can reduce the coupling between the secondary side 60 and the filter 70, so as to ensure the normal operation of the filter 70.

[0065] exist Figure 1 In the illustrated embodiment, the first chip 720 further includes an output terminal 7230, which can also be understood as the output terminal of the filter 70. The output terminal 7230 of the first chip 720 is disposed adjacent to both the third side 7205 and the fourth side 7207. "Adjacent" here can be understood as: the output terminal 7230 is disposed on the third side 7205, or the distance between the output terminal 7230 and the third side 7205 is less than or equal to a preset distance, for example, the preset distance can be 10μm, 20μm, etc.; the output terminal 7230 is disposed on the fourth side 7207, or the distance between the output terminal 7230 and the fourth side 7207 is less than or equal to a preset distance, for example, the preset distance can be 10μm, 20μm, etc.

[0066] The RF front-end module 100 may further include a first inductor 21, one end of which is connected to the output terminal 7230 of the first chip 720, and the other end is grounded. In this embodiment, the output terminal 7230 of the first chip 720 is located at the edge corner of the first chip 720, which facilitates connection with the first inductor 21, thereby making the overall structure of the RF front-end module 100 more compact.

[0067] Specifically, the first inductor 21 can serve as an impedance matcher. Figure 1 In the second direction Y, the first inductor 21 and the fourth side 7207 are spaced apart. For example, the first inductor 21 can be wound on the substrate 10 by means of metal traces; the first inductor 21 can also be a surface mount device (SMD) inductor, which can be attached to the surface of the substrate 10.

[0068] In some possible embodiments, the radio frequency signal output via filter 70 can be directly output to the outside through the antenna port provided on substrate 10. In other possible embodiments, please refer to... Figure 8 The RF front-end module 100 is provided with multiple antenna ports 102 for connecting antennas. In this case, the RF front-end module 100 may also include a second chip 810 disposed on the substrate 10. The second chip 810 is provided with a switching switch 80, which is connected to the output terminal of the filter 70 and is used to control the RF signal output by the filter 70 to be output to the outside from one of the antenna ports 102.

[0069] Specifically, the second chip 810 can be an integrated passive device (IPD) chip, which can be connected to the substrate 10 using a flip-chip process or a bonding process. Figure 8 In the embodiment shown, the second chip 810 and the filter 70 are spaced apart in the first direction X, and are located on opposite sides of the filter 70 along with the transformer 51, so as to make the overall layout of the RF front-end module 100 more compact.

[0070] The changeover switch 80 is integrated into the second chip 810, and it can be a single-pole multi-throw switch. Please refer to the respective specifications. Figure 2 and Figure 8 The switching switch 80 has a fixed terminal 801 and multiple select terminals 803. The switching switch 80 is used to connect the signal branch between the fixed terminal 801 and one of the select terminals 803. The fixed terminal 801 is connected to the output terminal of the filter 70, and the multiple select terminals 803 are connected to multiple antenna ports 102 in a one-to-one correspondence. Therefore, in this embodiment, the radio frequency signal output by the filter 70 can be output to the outside from one of the antenna ports 102 under the control of the switching switch 80.

[0071] exist Figure 8 In the illustrated embodiment, the RF front-end module 100 may further include a plurality of second inductors 23, each of which can serve as an impedance matcher. One end of each of the second inductors 23 is connected to a plurality of antenna ports 102, and the other end is grounded. Specifically, the plurality of second inductors 23 are spaced apart along the first direction X and located on the same side of the second chip 810. The plurality of second inductors 23 may be surface-mount inductors, which can be sequentially mounted along the first direction X in the gaps between the plurality of antenna ports 102 and the second chip 810, thus saving layout space on the substrate 10. Specifically, in Figure 8 In this configuration, there are two antenna ports 102 and two second inductors 23.

[0072] This application provides a radio frequency (RF) front-end module 100, which may include a substrate 10 and a power amplifier chip 30, a transformer module 50, and a filter 70 sequentially disposed on the substrate 10 along a first direction X. The transformer module 50 may include a transformer 51, which includes a primary side 52 and a secondary side 60 coupled together. The primary side 52 is connected to the output terminal 320 of the power amplifier chip 30. The secondary side 60 has a first terminal 601 for grounding and a second terminal 603 for connecting to the filter 70. The first terminal 601 and the second terminal 603 are located on the same side of a designated axis L. The designated axis L is the central axis of the power amplifier chip 30 and extends along the first direction X. Therefore, in this embodiment, the secondary side 60 of the transformer 51 is not symmetrically wound about the designated axis L, but rather uses an asymmetrical winding method.

[0073] The secondary side 60 may include a target connection segment 605 extending along the second direction Y, which passes through a designated axis L and connects to the first end 601. Here, "target connection segment 605" can be understood as the grounding portion of the secondary side 60 of the transformer 51, which may be located in the outer ring region of the secondary side 60 to define a portion of the outer contour of the secondary side 60. "Target connection segment 605 passes through the designated axis L" can be understood as the target connection segment 605 intersecting the designated axis L. The second direction Y intersects with the first direction X.

[0074] The filter 70 and the target connection segment 605 are spaced apart in the first direction X. Therefore, when the filter 70 is connected to the secondary side 60 of the transformer 51, the filter 70 and the grounding portion of the secondary side 60 (i.e., the target connection segment 605) can be spaced apart in the first direction X. On the one hand, since the target connection segment 605 is grounded, it indicates that the RF signal strength in the target connection segment 605 is relatively weak. When the filter 70 and the target connection segment 605 are placed close together, the above arrangement can reduce the coupling between the transformer 51 and the filter 70, thereby ensuring the operating performance of the filter 70. On the other hand, the above arrangement can also reduce the spacing between the transformer 51 and the filter 70, which is beneficial for achieving miniaturization of the RF front-end module 100.

[0075] This application embodiment also provides a radio frequency (RF) front-end module 100, which may include a substrate 10 and a power amplifier chip 30, a transformer module 50, and a filter 70 disposed on the substrate 10. The transformer module 50 may include a transformer 51, a first capacitor 54, and a second capacitor 56. The transformer 51 may include a coupled primary side 52 and a secondary side 60. The primary side 52 is connected to the output terminal 320 of the power amplifier chip 30, and the secondary side 60 has a first terminal 601 for grounding and a second terminal 603 for connecting to the filter 70. One end of the first capacitor 54 is connected to the first terminal 601, and the other end of the first capacitor 54 is grounded. One end of the second capacitor 56 is connected to the second terminal 603, and the other end of the second capacitor 56 is grounded. The first capacitor 54 and the second capacitor 56 are located on the same side of a designated axis L, which is the central axis of the power amplifier chip 30 and extends along a first direction X. The filter 70 and the transformer 51 are spaced apart along the first direction X, and the first capacitor 54 is located on the side of the second capacitor 56 away from the filter 70.

[0076] Since the first capacitor 54 and the second capacitor 56 are located on the same side of the designated axis L, it indicates that the first end 601 and the second end 603 of the secondary side 60 are also located on the same side of the designated axis L. Therefore, the secondary side 60 of the transformer 51 in this application does not adopt a symmetrical winding method with respect to the designated axis L, but rather an asymmetrical winding method.

[0077] Specifically, since the first capacitor 54 is located on the side of the second capacitor 56 away from the filter 70, that is, the grounding capacitor (i.e. the first capacitor 54) in the transformer module 50 is set away from the filter 70, by optimizing the connection position of the grounding capacitor, the coupling between the grounding capacitor and the filter 70 can be reduced to ensure the working performance of the filter 70.

[0078] In some possible embodiments, the first capacitor 54 and the second capacitor 56 are arranged side by side in the first direction X.

[0079] In some possible embodiments, the secondary side 60 may include a target connecting segment 605 extending along a second direction Y, the target connecting segment 605 passing through a designated axis L and connecting to the first end 601; wherein the second direction Y intersects the first direction X. The filter 70 is spaced apart from the target connecting segment 605 in the first direction X.

[0080] Specifically, the features of the substrate 10, power amplifier chip 30, transformer module 50 and filter 70 can be referred to and followed in the relevant descriptions in the above embodiments. To save space, they will not be described in detail here.

[0081] Furthermore, other features in the above embodiments can also be incorporated into this embodiment without conflict. For example, the features of the first chip 720 and the second chip 810 in the above embodiments can also be incorporated into the RF front-end module 100 in this embodiment. To save space, they will not be described in detail here.

[0082] This application embodiment also provides a radio frequency (RF) front-end module 100, which may include a substrate 10 and a power amplifier chip 30, a transformer module 50, and a filter 70 disposed on the substrate 10. The power amplifier chip 30 includes a first output terminal 3210 and a second output terminal 3230. The transformer module 50 includes a primary side 52 and a secondary side 60 coupled together, with the primary side 52 connecting the first output terminal 3210 and the second output terminal 3230. The secondary side 60 has a first terminal 601 for grounding and a second terminal 603 for connecting the filter 70, with the first terminal 601 and the second terminal 603 located on the same side of a designated axis L. The designated axis L is the central axis of the power amplifier chip 30 and extends along a first direction X. The filter 70 and the transformer module 50 are spaced apart along the first direction X.

[0083] Since the first end 601 of the secondary side 60, used for grounding, and the second end 603, used for connecting the filter 70, are both located on the same side of the designated axis L, the secondary side 60 of the transformer 51 in this application does not adopt a symmetrical winding method about the designated axis L, but rather an asymmetrical winding method. By adjusting the winding direction of the secondary side 60, this application can reduce the coupling between the transformer 51 and the filter 70, thereby ensuring the working performance of the filter 70.

[0084] In some possible embodiments, the transformer module 50 further includes a first capacitor 54 and a second capacitor 56. One end of the first capacitor 54 is connected to a first terminal 601, and the other end of the first capacitor 54 is grounded. One end of the second capacitor 56 is connected to a second terminal 603, and the other end of the second capacitor 56 is grounded. The first capacitor 54 and the second capacitor 56 are located on the same side of a designated axis L.

[0085] In some possible embodiments, the first capacitor 54 and the second capacitor 56 are arranged side by side in the first direction X, with the first capacitor 54 located on the side of the second capacitor 56 away from the filter 70.

[0086] Specifically, the features of the substrate 10, power amplifier chip 30, transformer module 50 and filter 70 can be referred to and followed in the relevant descriptions in the above embodiments. To save space, they will not be described in detail here.

[0087] Furthermore, other features in the above embodiments can also be incorporated into this embodiment without conflict. For example, the features of the first chip 720 and the second chip 810 in the above embodiments can also be incorporated into the RF front-end module 100 in this embodiment. To save space, they will not be described in detail here.

[0088] Please see Figure 9 This embodiment also provides an electronic device 500, which can be a 4G or 5G communication device such as a smartphone, tablet, or smartwatch. Specifically, the electronic device 500 may include the radio frequency front-end module 100 in the above embodiment to realize the reception and transmission of radio frequency signals.

[0089] Furthermore, with the development of 5G technology, the requirements for the performance of radio frequency front-end modules are becoming increasingly stringent. The technical solution of this application can be applied to 5G radio frequency front-end modules to improve the communication performance of 5G communication equipment.

[0090] In this application specification, certain terms are used to refer to specific components. Those skilled in the art will understand that hardware manufacturers may use different names to refer to the same component. The specification and claims do not distinguish components based on differences in name, but rather on differences in function. The term "comprising" throughout the specification and claims is an open-ended term and should be interpreted as "including but not limited to"; "generally" means that those skilled in the art can solve the technical problem within a certain margin of error and basically achieve the technical effect.

[0091] In the description of this application, it should be understood that the terms "upper", "lower", "front", "back", "left", "right", "inside", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the purpose of simplifying the description of this application and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0092] In this application, unless otherwise expressly specified or limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or merely surface contact. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0093] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0094] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0095] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.

Claims

1. A radio frequency front-end module, characterized in that, It includes a substrate and a power amplifier chip, a transformer module and a filter sequentially disposed on the substrate along a first direction; The transformer module includes a transformer, which includes a primary side and a secondary side coupled together. The primary side is connected to the output terminal of the power amplifier chip. The secondary side has a first terminal for grounding and a second terminal for connecting to the filter. The first terminal and the second terminal are located on the same side of a designated axis. The designated axis is the central axis of the power amplifier chip and extends along the first direction. The secondary side includes a target connecting segment extending along a second direction, the target connecting segment passing through the designated axis and connecting to the first end; wherein the second direction and the first direction intersect; The filter and the target connection segment are spaced apart in the first direction.

2. The radio frequency front-end module according to claim 1, characterized in that, The substrate comprises multiple sequentially stacked metal layers; the target connection segment and the filter are disposed on different metal layers.

3. The radio frequency front-end module according to claim 1, characterized in that, The minimum distance between the filter and the target connection segment in the first direction is greater than or equal to 50 μm and less than or equal to 100 μm.

4. The radio frequency front-end module according to claim 1, characterized in that, The secondary edge includes a first connecting segment, a body segment, and a second connecting segment connected in sequence, and the body segment includes the target connecting segment; One end of the body segment is connected to the first end via the first connecting segment, and the other end of the body segment is connected to the second end via the second connecting segment; The first connecting segment and the second connecting segment are located on the same side of the designated axis.

5. The radio frequency front-end module according to claim 4, characterized in that, The first connecting segment extends along the second direction and is connected to the first end; The second connecting segment extends along the first direction and is connected to the second end.

6. The radio frequency front-end module according to claim 4, characterized in that, The body segment includes a first sub-body segment, a second sub-body segment, and a third sub-body segment that are sequentially connected, and the first sub-body segment includes the target connection segment; The first sub-body segment is connected to the first end via the first connecting segment, and the third sub-body segment is connected to the second end via the second connecting segment.

7. The radio frequency front-end module according to claim 6, characterized in that, The substrate includes a first metal layer and a second metal layer stacked in phase; The first sub-body segment, the third sub-body segment, and the second connecting segment are disposed on the first metal layer, and the first connecting segment is disposed on the second metal layer; the first sub-body segment and the first connecting segment are connected through metal vias disposed on the substrate, and the third sub-body segment and the second connecting segment are directly connected; or The first sub-body segment, the third sub-body segment, and the first connecting segment are disposed on the first metal layer, and the second connecting segment is disposed on the second metal layer; the first sub-body segment and the first connecting segment are directly connected, and the third sub-body segment and the second connecting segment are connected through metal vias disposed on the substrate.

8. The radio frequency front-end module according to claim 6, characterized in that, The substrate includes a first metal layer and a second metal layer stacked in phase; The first sub-body segment and the third sub-body segment are disposed on the first metal layer, and the second sub-body segment is disposed on the second metal layer; the first sub-body segment is connected to the second sub-body segment through a metal via disposed on the substrate, and the second sub-body segment is connected to the third sub-body segment through a metal via disposed on the substrate.

9. The radio frequency front-end module according to any one of claims 1 to 8, characterized in that, The transformer module also includes a first capacitor and a second capacitor, one end of the first capacitor is connected to the first terminal, and the other end of the first capacitor is grounded; One end of the second capacitor is connected to the second terminal, and the other end of the second capacitor is grounded; the first capacitor and the second capacitor are located on the same side of the specified axis.

10. The radio frequency front-end module according to claim 9, characterized in that, The first capacitor and the second capacitor are arranged side by side in the first direction, with the first capacitor located on the side of the second capacitor away from the filter.

11. The radio frequency front-end module according to any one of claims 1 to 8, characterized in that, The secondary side is wound around the substrate, and the number of turns of the secondary side is greater than or equal to 2.

12. The radio frequency front-end module according to any one of claims 1 to 8, characterized in that, The power amplifier chip has a first output terminal and a second output terminal, which are used to output a pair of radio frequency differential signals. The primary edge is connected between the first output terminal and the second output terminal, and is symmetrically arranged about the specified axis.

13. The radio frequency front-end module according to claim 12, characterized in that, The substrate includes a plurality of sequentially stacked metal layers, the plurality of metal layers including a third metal layer located at the top layer; the primary edge is wound around the third metal layer; The transformer module also includes a third capacitor, one end of which is connected to the midpoint of the primary side, and the other end is grounded.

14. The radio frequency front-end module according to claim 13, characterized in that, The primary edge is wound around the third metal layer to define a surrounding area, and the third capacitor is disposed within the surrounding area and located on the designated axis.

15. The radio frequency front-end module according to any one of claims 1 to 8, characterized in that, The radio frequency front-end module further includes a first chip disposed on the substrate, and the filter is disposed within the first chip; The first chip and the target connection segment are spaced apart in the first direction.

16. The radio frequency front-end module according to claim 15, characterized in that, The first chip includes a first side and a second side connected to each other. The first side and the target connection segment are spaced apart in the first direction, and the first side extends along the second direction. The second side and the second end of the secondary side are located on the same side of the designated axis, and the second side extends along the first direction. The first chip has an input terminal, which is disposed adjacent to the first side and the second side respectively, and the input terminal is connected to the second end of the secondary side.

17. The radio frequency front-end module according to claim 16, characterized in that, The first chip further includes a third side and a fourth side, the third side and the first side are disposed opposite to each other in the first direction, the fourth side and the second side are disposed opposite to each other in the second direction, and the first side, the second side, the third side and the fourth side are connected in sequence; The first chip is also provided with an output terminal, which is respectively located adjacent to the third side and the fourth side; the radio frequency front-end module also includes a first inductor, one end of which is connected to the output terminal of the first chip and the other end is grounded.

18. The radio frequency front-end module according to claim 17, characterized in that, The first inductor and the fourth side are spaced apart in the second direction.

19. The radio frequency front-end module according to claim 15, characterized in that, The filter is an LC filter; or / and The first chip is an integrated passive device chip or a low-temperature co-fired ceramic chip.

20. The radio frequency front-end module according to any one of claims 1 to 8, characterized in that, The radio frequency front-end module further includes a second chip disposed on the substrate; the second chip is provided with a switching switch, which is connected to the output terminal of the filter; The second chip and the filter are spaced apart in the first direction.

21. The radio frequency front-end module according to claim 20, characterized in that, The radio frequency front-end module is provided with multiple antenna ports for connecting antennas; the switching switch is provided with a fixed end and multiple selectable ends, and the switching switch is used to conduct the signal branch between the fixed end and one of the selectable ends; The fixed terminal is connected to the output terminal of the filter, and the multiple selection terminals are connected one-to-one with the multiple antenna ports.

22. The radio frequency front-end module according to claim 21, characterized in that, The radio frequency front-end module also includes a plurality of second inductors; one end of each of the plurality of second inductors is connected to a plurality of antenna ports in a corresponding manner, and the other end is grounded; Multiple second inductors are spaced apart along the first direction and located on the same side of the second chip.

23. The radio frequency front-end module according to any one of claims 1 to 8, characterized in that, The operating frequency band of the radio frequency front-end module is greater than or equal to 3.3 GHz and less than or equal to 5 GHz.

24. The radio frequency front-end module according to any one of claims 1 to 8, characterized in that, The operating frequency band of the radio frequency front-end module is either the N77 band or the N79 band.

25. A radio frequency front-end module, characterized in that, It includes a substrate and a power amplifier chip, a transformer module and a filter disposed on the substrate; The transformer module includes a transformer, a first capacitor, and a second capacitor. The transformer includes a primary side and a secondary side coupled together. The primary side is connected to the output terminal of the power amplifier chip. The secondary side has a first terminal for grounding and a second terminal for connecting to the filter. One end of the first capacitor is connected to the first terminal, and the other end of the first capacitor is grounded; one end of the second capacitor is connected to the second terminal, and the other end of the second capacitor is grounded; the first capacitor and the second capacitor are located on the same side of the designated axis, which is the central axis of the power amplifier chip, and the designated axis extends along a first direction; The filter and the transformer are spaced apart in the first direction, and the first capacitor is located on the side of the second capacitor away from the filter.

26. The radio frequency front-end module according to claim 25, characterized in that, The first capacitor and the second capacitor are arranged side by side in the first direction.

27. The radio frequency front-end module according to claim 25 or 26, characterized in that, The secondary side includes a target connecting segment extending along a second direction, the target connecting segment passing through the designated axis and connecting to the first end; wherein the second direction and the first direction intersect; The filter and the target connection segment are spaced apart in the first direction.

28. A radio frequency front-end module, characterized in that, The device includes a substrate and a power amplifier chip, a transformer module, and a filter disposed on the substrate; the power amplifier chip includes a first output terminal and a second output terminal. The transformer module includes a transformer, which includes a primary side and a secondary side coupled together. The primary side is connected between the first output terminal and the second output terminal. The secondary side has a first terminal for grounding and a second terminal for connecting to the filter. The first terminal and the second terminal are located on the same side of a designated axis. The designated axis is the central axis of the power amplifier chip and extends along a first direction. The filter and the transformer are spaced apart in the first direction.

29. The radio frequency front-end module according to claim 28, characterized in that, The transformer module further includes a first capacitor and a second capacitor. One end of the first capacitor is connected to the first terminal, and the other end of the first capacitor is grounded. One end of the second capacitor is connected to the second terminal, and the other end of the second capacitor is grounded. The first capacitor and the second capacitor are located on the same side of the designated axis.

30. The radio frequency front-end module according to claim 29, characterized in that, The first capacitor and the second capacitor are arranged side by side in the first direction, with the first capacitor located on the side of the second capacitor away from the filter.

31. An electronic device, characterized in that, include: The radio frequency front-end module as described in any one of claims 1 to 30.

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