Vertical hall element, sensing device, and method of forming a vertical hall element

Abstract

The present invention relates to a vertical Hall element, a sensing device and a method of forming a vertical Hall element, providing a vertical Hall element comprising a substrate, an epitaxial layer disposed above the substrate, a first terminal comprising a doped region and a deep trench isolation (DTI) structure, and a second terminal comprising a first contact. The doped region is disposed in the substrate, the DTI structure passes through the epitaxial layer and is coupled with the doped region, and the first contact is disposed in the epitaxial layer.

Description

Technical Field

[0001] This application relates to semiconductor structures, and more particularly to Hall devices and methods for manufacturing Hall devices. Background Technology

[0002] Hall elements utilize the Hall effect to generate a voltage corresponding to the axial component of a magnetic field vector. Among other applications, Hall sensors are used for proximity sensing, positioning, speed detection, and current sensing. Summary of the Invention

[0003] Embodiments of this application relate to vertical Hall elements, including sensing devices for the Hall element, and methods for forming the Hall element. For example, the vertical Hall element includes a deep trench isolation (DTI) structure and doped regions, which together serve as a single terminal.

[0004] In one embodiment, the vertical Hall element includes a substrate, an epitaxial layer disposed above the substrate, a first terminal including a doped region and a deep trench isolation (DTI) structure, and a second terminal including a first contact. The doped region is disposed in the substrate, the DTI structure passes through the epitaxial layer and is coupled to the doped region, and the first contact is disposed in the epitaxial layer.

[0005] In one embodiment, the sensing device includes a horizontal Hall element, a first vertical Hall element disposed on a first side of the horizontal Hall element, and a second vertical Hall element disposed on a second side of the horizontal Hall element. Each of the first and second vertical Hall elements includes a substrate, an epitaxial layer disposed above the substrate, a first terminal including a doped region and a deep trench isolation (DTI) structure, and a second terminal including a first contact. The doped region is disposed in the substrate, the DTI structure passes through the epitaxial layer and is coupled to the doped region, and the first contact is disposed in the epitaxial layer.

[0006] In one embodiment, a method of forming a vertical Hall element includes forming an epitaxial layer over a substrate, the substrate including a doped region therein, forming a deep trench isolation (DTI) structure through the epitaxial layer and coupled to the doped region, and forming a first contact in the epitaxial layer. A first terminal of the element includes the doped region and the DTI structure, and a second terminal of the element includes the first contact. Attached Figure Description

[0007] Figure 1 This shows a schematic view of a sensing device according to one embodiment.

[0008] Figure 2A , Figure 2B and Figure 2C The first and second vertical Hall elements are shown according to one embodiment.

[0009] Figure 3A , Figure 3B , Figure 3C and Figure 3D This illustrates a method for manufacturing a vertical Hall element according to one embodiment.

[0010] Figure 4A and Figure 4B The first and second vertical Hall elements are shown according to one embodiment.

[0011] Figure 5A and Figure 5B The first and second vertical Hall elements are shown according to one embodiment. Detailed Implementation

[0012] Below and appendix Figure 1 This application provides a detailed description of the embodiments. The scope of this application is limited by the claims and includes various alternatives, modifications, and equivalents. Although the steps of various processes are presented in a given order, the embodiments are not necessarily limited to being performed in the listed order. In some embodiments, certain operations may be performed simultaneously, in a different order than described, or not at all.

[0013] Various specific details are set forth in the following description. These details are provided to facilitate a full understanding of the scope of this application through specific examples, and embodiments may be practiced according to the claims without some of these specific details. Therefore, the specific embodiments of this application are exemplary and not intended to be exclusive or limiting. For clarity, technical materials known in the art related to this application have not been described in detail so as not to unnecessarily obscure this application.

[0014] The list of items beginning with phrases such as “at least one of,” “one or more of,” or “one or two” as used in this application (including in the claims) represents an inclusive list. For example, one or more of A, B, and C means A or B or C or AB or AC or BC or ABC (i.e., A and B and C).

[0015] Figure 1 A schematic view of a sensing device 100 according to one embodiment is shown.

[0016] In one embodiment, the sensing device 100 includes a three-dimensional (3D) Hall sensor that detects magnetic fields along three directions. For example, when the main surface of the 3D Hall sensor is defined by a pair of axes along a first direction (e.g., the x-direction) and a second direction (e.g., the y-direction), the sensing device 100 includes a first vertical Hall element 101A for detecting the magnetic field along the first direction, a second vertical Hall element 101B for detecting the magnetic field along the second direction, and a horizontal Hall element 103 for detecting the magnetic field along a third direction (e.g., the z-direction) orthogonal to the first and second directions. In one embodiment, the first vertical Hall element 101A is disposed on a first side of the horizontal Hall element 103, and the second vertical Hall element 101B is disposed on a second side of the horizontal Hall element 103. For example, the horizontal Hall element 103 may have an upper surface orthogonal to the third direction, the first vertical Hall element 101A is disposed on the first side of the horizontal Hall element 103 orthogonal to the first direction, and the second Hall element 101B is disposed on the second side of the horizontal Hall element 103 orthogonal to the second direction.

[0017] exist Figure 1 The first vertical Hall element 101A includes a first deep trench isolation (DTI) structure 102A and a first doped region 116A, which together act as a single terminal. For example, the first DTI structure 102A penetrates through an epitaxial layer (e.g., in...). Figure 2B Epitaxial layer 214), and the first doped region 116A is disposed on the substrate below the epitaxial layer (e.g., in the...). Figure 2B In the substrate 218), and therefore, the first vertical Hall element 101A can have a larger active area compared to conventional vertical Hall elements.

[0018] exist Figure 1 The second vertical Hall element 101B includes a second deep trench isolation (DTI) structure 102B and a second doped region 116B, which together serve as a single terminal. For example, the second DTI structure 102B extends through the epitaxial layer, and the second doped region 116B is disposed in the substrate below the epitaxial layer. Therefore, compared with conventional vertical Hall elements, the second vertical Hall element 101B can have a larger active region.

[0019] In one embodiment, in Figure 1 The sensing device 100 is implemented using a modular approach, providing designers with the flexibility to arrange the Hall elements 101A, 101B, and 103 according to their needs. For example, the sensing device 100 can be implemented on a bipolar-CMOS-DMOS (BCD) platform.

[0020] Figure 2A , Figure 2Band Figure 2C The first and second vertical Hall elements 201A and 201B according to one embodiment are shown. Specifically, Figure 2A This is a simplified top view of the first vertical Hall element 201A. Figure 2B This is a simplified cross-sectional view of the first vertical Hall element 201A, and Figure 2C This is a simplified top view of the second vertical Hall element 201B.

[0021] Please refer to Figure 2A and Figure 2B The first vertical Hall element 201A includes a substrate 218 and a doped region 216 disposed in the substrate 218. In one embodiment, the substrate 218 is doped to have a first conductivity type (e.g., P-type), and the doped region 216 is doped to have a second conductivity type (e.g., N-type). Specifically, the doped region 216 is a buried N-type (BN) region (e.g., a BN mask) implemented on a bipolar-CMOS-DMOS (BCD) platform.

[0022] exist Figure 2A and Figure 2B The first vertical Hall element 201A further includes an epitaxial layer 214 disposed above a substrate 218 and a deep trench isolation (DTI) structure 202. In one embodiment, the epitaxial layer 214 is an N-type epitaxial layer. The epitaxial layer 214 may have a sufficiently large thickness T to exceed implantation depth limitations in the art, thereby ensuring a large active region for the first vertical Hall element 201A. The epitaxial layer 214 may have a sufficiently small thickness T to reliably form the DTI structure 202 therein, thereby ensuring a target yield for the first vertical Hall element 201A. For example, the thickness T of the epitaxial layer 214 is in the range of about 7 µm (e.g., 6.5 µm to 7.4 µm) to about 12 µm (e.g., 11.5 µm to 12.4 µm).

[0023] exist Figure 2A and Figure 2B The DTI structure 202 extends through the epitaxial layer 214 and into the substrate 218 to couple with the doped region 216. The DTI structure 202 includes a conductive layer 204 and an insulating layer 206 surrounding the conductive layer 204. In one embodiment, the conductive layer 204 is a doped polysilicon layer, and the insulating layer 206 is an oxide layer. For example, the conductive layer 204 is doped to have the same conductivity type (e.g., N-type) as the doped region 216 and a similar doping concentration (e.g., approximately 10⁻⁶) as the doped region 216. 18 To about 10 21 cm -3 ).

[0024] exist Figure 2A and Figure 2B The first vertical Hall element 201A further includes a first contact 210A, a second contact 210B, and a third contact 210C disposed in the epitaxial layer 241. In one embodiment, the first, second, and third contacts 210A, 210B, and 210C are disposed in the upper part of the epitaxial layer 241 and arranged along a first direction (e.g., the x-direction).

[0025] exist Figure 2A and Figure 2B The first vertical Hall element 201A further includes first, second, third, and fourth shallow trench isolation (STI) layers 208A, 208B, 208C, and 208D disposed in the epitaxial layer 214. A deep trench isolation (DTI) structure 202 passes through the first STI layer 208A. A first portion of the first STI layer 208A and the second STI layer 208B surround the second contact 210B, the third STI layer 208C surrounds the first contact 210A, and a second portion of the first STI layer 208A and the fourth STI layer 208D surround the third contact 210C.

[0026] exist Figure 2A and Figure 2B The first vertical Hall element 201A further includes a fourth contact 210D and a fifth contact 210E. In one embodiment, the first, fourth and sixth contacts 210A, 210D and 210E are disposed in the upper part of the epitaxial layer 241 and arranged along a second direction (e.g., the y direction) intersecting the first direction.

[0027] exist Figure 2A and Figure 2B The first vertical Hall element 201A further includes a fifth and a sixth shallow trench isolation (STI) layer 208E and 208F disposed in the epitaxial layer 214. A third portion of the first STI layer 208A and the fifth STI layer 208E surround the fourth contact 210D, and a fourth portion of the first STI layer 208A and the sixth STI layer 208F surround the fifth contact 210E.

[0028] exist Figure 2A and Figure 2B The first vertical Hall element 201A further includes a doped cap 212 disposed in the epitaxial layer 214 and defined by the first to sixth STI layers 208A to 208F. Specifically, the doped cap 212 is disposed in the upper portion of the epitaxial layer 214 and is adjacent to the first, second, third, fourth, fifth, and sixth STI layers 208A, 208B, 208C, 208D, 208E, and 208F. For example, the doped cap 212 has approximately 10⁻¹⁰ Ω·cm by being heavily doped with a first type of dopant (e.g., a p-type dopant). 18 To about 1021 cm -3 The concentration, and the first to fifth contacts 210A to 210E have approximately 10% concentration by being heavily doped with a second type of dopant (e.g., an N-type dopant). 18 To about 10 21 cm -3 The concentration.

[0029] exist Figure 2A and Figure 2B The first vertical Hall element 201A in the middle detects an external magnetic field along the second direction (e.g., the y-direction). Specifically, the first vertical Hall element 201A includes a first terminal a and a third terminal c for receiving a bias signal, and a second terminal b and a fourth terminal d for detecting a Hall voltage. For example, the first terminal a includes a DTI structure 202 and a doped region 216, the third terminal c includes a first contact 210A, the second terminal b includes a second contact 210B, and the fourth terminal d includes a third contact 210C.

[0030] In one embodiment, a bias current is applied between the first terminal a and the third terminal c. For example, the first terminal a may be coupled to a current source (not shown), and the third terminal c may be coupled to ground (not shown), so that current flows from the first terminal a to the third terminal c, as shown. Figure 2B As shown by the dashed arrow in the image. Figure 2A and Figure 2B The first terminal a includes a DTI structure 202 extending through the epitaxial layer 214 and a doped region 216 disposed in the substrate 218 beneath the epitaxial layer 214, thereby essentially using the entire epitaxial layer 214 as the active region of the vertical Hall element 201A. The epitaxial layer 214 may have a thickness T exceeding the implantation depth limits in the art, so that the area of ​​the active region in the vertical Hall element 201A according to one embodiment of the present application is significantly larger than the area of ​​a conventional vertical Hall element. Therefore, the vertical Hall element 201A according to one embodiment of the present application may exhibit improved sensing performance, such as one or more of increased sensitivity, reduced noise, better stability, improved linearity, reduced offset voltage, and increased power handling capability.

[0031] exist Figure 2A and Figure 2B In the embodiment shown, the doped region 218 has a shape similar to that of the DTI structure 202. For example, in Figure 2A and Figure 2BThe doped region 218 and the DTI structure 202 can each be a generally rectangular ring. However, the embodiments of this application are not limited thereto. In other embodiments, the vertical Hall element 201A may include a pair of doped regions, each of which may have a generally linear shape extending along a particular direction (e.g., the y-direction) and may be coupled to a corresponding portion (e.g., the lower portion) of the DTI structure 202.

[0032] exist Figure 2C The second vertical Hall element 201B in the middle has the same characteristics as in the middle. Figure 2A and Figure 2C The first vertical Hall element 201A is configured similarly, while the second vertical Hall element 201B includes a second terminal b having a fourth contact 210D and a fourth terminal d having a fifth contact 210E. Figure 2C In one embodiment, the first, fourth, and fifth contacts 210A, 210D, and 210E arranged along the second direction (e.g., the y-direction) act as active contacts, and thus the second vertical Hall element 201B detects the external magnetic field along the first direction (e.g., the x-direction).

[0033] Figure 3A , Figure 3B , Figure 3C and Figure 3D This shows the fabrication of a vertical Hall element according to one embodiment (e.g., Figure 2A and Figure 2B The method of the first vertical Hall element 201A).

[0034] Please refer to Figure 3A The method includes forming an epitaxial layer 314 over a substrate 318 having a doped region 316 (e.g., a BN mask). In one embodiment, the epitaxial layer 314 is an N-type epitaxial (N-epi) layer and is formed using a chemical vapor deposition (CVD) process. For example, a gaseous precursor comprising a semiconductor material and an N-type dopant may be introduced into a chamber containing the substrate 318 and decomposed at a higher temperature to deposit semiconductor atoms over the substrate 318 while incorporating the N-type dopant, thereby forming the epitaxial layer 314.

[0035] exist Figure 3A The epitaxial layer 314 is formed to have a sufficiently large thickness T to exceed implantation depth limitations in the art, thereby ensuring a large active region for the vertical Hall element. The epitaxial layer 314 is also formed to have a sufficiently small thickness T to reliably form a DTI structure therein, which will be referred to below. Figure 3C Detailed explanation. For example, the thickness T of the epitaxial layer 314 is in the range of about 7 µm to about 12 µm.

[0036] Please refer to Figure 3B The method further includes forming a shallow trench isolation (STI) structure comprising first, second, third, and fourth STI layers 308A, 308B, 308C, and 308D. In one embodiment, an epitaxial layer 314 is etched using an anisotropic etching process (e.g., reactive ion etching) to form a shallow trench, a thin oxide layer is grown on the trench walls, the trench is filled with an insulating oxide, and then a planarization process (e.g., chemical mechanical polishing) is performed to planarize the upper surface of the epitaxial layer 314 and remove excess insulating material, thereby forming the first to fourth STI layers 308A to 308D.

[0037] Please refer to Figure 3C The method also includes forming a deep trench isolation (DTI) structure 302 that extends through the epitaxial layer 314 to couple with the doped region 316. Figure 3C The DTI structure 302 includes a conductive layer 304 and an insulating layer 306 surrounding the conductive layer 304. In one embodiment, a first STI layer 308A, an epitaxial layer 314, and a substrate 318 are etched using an anisotropic etching process (e.g., reactive ion etching) to form a deep trench, the trench surface is thermally oxidized to form an insulating layer 306 (e.g., silicon oxide), the trench is filled with a conductive material (e.g., polysilicon) using a CVD process, and a planarization process is performed on the upper surface of the resulting structure to form the DTI structure 302. For example, the conductive layer 304 may be in-situ doped during trench filling.

[0038] Please refer to Figure 3D The method further includes forming a doped cap 312 and first, second, and third contacts 310A, 310B, and 310C in the epitaxial layer 314. The first, second, and third contacts 310A, 310B, and 310C are along a first direction (e.g., in...). Figure 2A Arranged in the x-direction. In one embodiment, the doped cap 312 is doped to have a first conductivity type by means of ion implantation, and the first, second, and third contacts 310A, 310B, and 310C are doped to have a second conductivity type. For example, the doped cap 312 has approximately 10% conductivity by heavy doping with a p-type dopant. 18 To about 10 21 cm -3 The concentration, and the first, second, and third contacts 310A, 310B, and 310C have approximately 10% concentration by heavy doping with N-type dopant. 18 To about 10 21 cm -3 The concentration.

[0039] Despite Figure 3DNot shown in the text, but the method also includes forming fourth and fifth contacts using ion implantation (e.g., in...). Figure 2A The fourth and fifth contacts 210D and 210E in the first contact 310A, the fourth contact (not shown), and the fifth contact (not shown) are along a second direction intersecting the first direction (e.g., in the first direction). Figure 2A Arranged in the y-direction. For example, the fourth and fifth contacts have approximately 10% doping by heavily doping with N-type dopant. 18 To about 10 21 cm -3 The concentration.

[0040] Figure 4A and Figure 4B The first and second vertical Hall elements 401A and 401B according to one embodiment are shown. Specifically, Figure 4A This is a simplified top view of the first vertical Hall element 401A, and Figure 4B This is a simplified top view of the second vertical Hall element 401B.

[0041] Please refer to Figure 4A The first vertical Hall element 401A detects an external magnetic field along a second direction (e.g., the y-direction). Specifically, the first vertical Hall element 401A includes a first terminal a and a third terminal c for receiving a bias signal, and a second terminal b and a fourth terminal d for detecting a Hall voltage. For example, the first terminal a includes a DTI structure 402 and a doped region (not shown), the third terminal c includes a first contact 410A, the second terminal b includes a second contact 410B, and the fourth terminal d includes a third contact 410C.

[0042] Please refer to Figure 4B The second vertical Hall element 401B detects an external magnetic field along a first direction (e.g., the x-direction). Specifically, the second vertical Hall element 401B includes a first terminal a and a third terminal c for receiving a bias signal, and a second terminal b and a fourth terminal d for detecting a Hall voltage. For example, the first terminal a includes a DTI structure 402 and a doped region (not shown), the third terminal c includes a first contact 410A, the second terminal b includes a fourth contact 410D, and the fourth terminal d includes a fifth contact 410E.

[0043] exist Figure 4A and Figure 4B The first and second vertical Hall elements 401A and 401B in the middle are respectively connected to the... Figure 2A and Figure 2CThe difference between the first and second vertical Hall elements 201A and 201B is that the first and second vertical Hall elements 401A and 401B respectively include an insulating cap 412 instead of a doped cap 212. In one embodiment, the first and second vertical Hall elements 401A and 401B respectively include an STI structure, which includes an STI layer 408A and an insulating cap 412, which are obtained by using the same method as described above. Figure 3B The processes described are similar to those described above and are formed together.

[0044] exist Figure 4A and Figure 4B The first and second vertical Hall elements 401A and 401B in the middle each include an insulating cap 412, and are therefore related to the doped cap 212. Figure 2A and Figure 2C Compared to the first and second vertical Hall elements 201A and 201B, the surface current can be reduced. Based on... Figure 4A and Figure 4B The reduced surface current in the vertical Hall elements 401A and 401B of the embodiments further enhances sensing performance. For example, for a given magnetic field strength, the reduced surface current can result in a higher Hall voltage, thereby further increasing the sensitivity of the vertical Hall elements 401A and 401B.

[0045] Figure 5A and Figure 5B The first and second vertical Hall elements 501A and 501B according to one embodiment are shown. Specifically, Figure 5A This is a simplified top view of the first vertical Hall element 501A, and Figure 5B This is a simplified top view of the second vertical Hall element 501B.

[0046] Please refer to Figure 5A The first vertical Hall element 501A detects an external magnetic field along a second direction (e.g., the y-direction). Specifically, the first vertical Hall element 501A includes a first terminal a and a third terminal c for receiving a bias signal, and a second terminal b and a fourth terminal d for detecting a Hall voltage. For example, the first terminal a includes a DTI structure 502 and a doped region (not shown), the third terminal c includes a first contact 510A, the second terminal b includes a second contact 510B, and the fourth terminal d includes a third contact 510C.

[0047] Please refer to Figure 5BThe second vertical Hall element 501B detects an external magnetic field along a first direction (e.g., the x-direction). Specifically, the second vertical Hall element 501B includes a first terminal a and a third terminal c for receiving a bias signal, and a second terminal b and a fourth terminal d for detecting a Hall voltage. For example, the first terminal a includes a DTI structure 502 and a doped region (not shown), the third terminal c includes a fourth contact 510D, the second terminal b includes a fifth contact 510E, and the fourth terminal d includes a sixth contact 510F.

[0048] exist Figure 5A The first vertical Hall element 501A in the middle and in Figure 2A The difference in the first vertical Hall element 201A is that the first vertical Hall element 501A includes first, second, and third contacts 510A, 510B, and 510C extending along the second direction (e.g., the y-direction), respectively. Therefore, when viewed in a top view, the areas of the first, second, and third contacts 510A, 510B, and 510C in the first vertical Hall element 501A are respectively larger than the area of ​​one of the corresponding first, second, and third contacts 210A, 210B, and 210C in the first vertical Hall element 201A.

[0049] exist Figure 5B The second vertical Hall element 501B in the middle and in Figure 2C The difference in the second vertical Hall element 201B is that the second vertical Hall element 501B includes fourth, fifth, and sixth contacts 510D, 510E, and 510F extending along the first direction (e.g., the x-direction), respectively. Therefore, when viewed in a top view, the areas of the fourth, fifth, and sixth contacts 510D, 510E, and 510F in the second vertical Hall element 501A are respectively larger than the areas of one of the corresponding first, fourth, and fifth contacts 210A, 210D, and 210E in the second vertical Hall element 201B.

[0050] With Figure 2A and Figure 2B Compared to the contacts 210A to 210E in the embodiments shown, in Figure 5A and Figure 5B In the illustrated embodiment, each contact 510A to 510F has a large current-carrying area. Therefore, the contact resistance of each contact 510A to 510F can be reduced, and more charge carriers can be collected in the vertical Hall elements 501A and 501B to further improve the sensing performance of the vertical Hall elements 501A and 501B.

[0051] A vertical Hall element according to one embodiment of this application may include a DTI structure and a doped region, which together serve as a single terminal. The DTI structure extends through an epitaxial layer, and the doped region is located beneath the epitaxial layer, thus essentially using the entire epitaxial layer as the active region of the vertical Hall element. Such an epitaxial layer may have a thickness exceeding implantation depth limits in the art, so that the area of ​​the active region in the vertical Hall element according to one embodiment of this application is significantly larger than the area of ​​a conventional vertical Hall element. Therefore, the vertical Hall element according to one embodiment of this application may exhibit improved sensing performance, such as increased sensitivity, reduced noise, better stability, improved linearity, reduced offset voltage, and increased power handling capability, or one or more of these.

[0052] Furthermore, the sensing device according to one embodiment of this application can be implemented based on a modular approach, thereby providing designers with the flexibility to arrange multiple Hall elements in the sensing device according to their needs. For example, such a sensing device can be implemented on a BCD platform to integrate the multiple Hall elements with signal conditioning and processing circuitry on the same chip.

[0053] The embodiments of this application have been described in conjunction with specific examples provided by way of example. Various substitutions, modifications, and alterations may be made to the embodiments described herein without departing from the scope of the claims set forth below. Therefore, the embodiments described herein are intended to be illustrative and not limiting.

Claims

1. A vertical Hall element, characterized in that, include: Substrate; An epitaxial layer is disposed above the substrate; The first terminal includes a doped region and a deep trench isolation (DTI) structure, wherein the doped region is disposed in the substrate and the DTI structure passes through the epitaxial layer and is coupled to the doped region; as well as The second terminal includes a first contact disposed in the epitaxial layer.

2. The element as claimed in claim 1, characterized in that, The device is implemented on a bipolar-CMOS-DMOS (BCD) platform, and the doped region is an embedded N-type (BN) region.

3. The element as claimed in claim 1, characterized in that, The DTI structure includes a conductive layer and an insulating layer, with the insulating layer surrounding the conductive layer.

4. The element as described in claim 3, characterized in that, The conductive layer comprises doped polycrystalline silicon, and the insulating layer comprises oxide.

5. The element as claimed in claim 1, characterized in that, Also includes: The third terminal includes a second contact disposed in the epitaxial layer; The fourth terminal includes a third contact disposed in the epitaxial layer. The first, second, and third contact members are arranged along the first direction.

6. The element as claimed in claim 5, characterized in that, It also includes first, second, third, and fourth shallow trench isolation (STI) layers disposed in the epitaxial layer. The deep trench isolation (DTI) structure passes through the first STI layer, a first portion of the first STI layer and the second STI layer surround the second contact, the third STI layer surrounds the first contact, and a second portion of the first STI layer and the fourth STI layer surround the third contact.

7. The element as claimed in claim 6, characterized in that, It also includes a fourth and a fifth contact disposed in the epitaxial layer, each of the first, fourth and fifth contacts being arranged along a second direction intersecting the first direction.

8. The element as claimed in claim 6, characterized in that, It also includes a doped cap disposed in the epitaxial layer and defined by the first, second, third, and fourth STI layers. The doped cap has a first conductivity type, and each of the first, second, and third contacts has a second conductivity type.

9. The element as claimed in claim 8, characterized in that, Each of the first, second, and third contacts extends along a second direction intersecting the first direction.

10. The element as claimed in claim 5, characterized in that, It also includes a shallow trench isolation (STI) structure disposed in the epitaxial layer, the STI structure comprising an STI layer and an insulating cap. The deep trench isolation (DTI) structure passes through the STI layer, and the first, second, and third contacts are located within the insulating cover.

11. The element as claimed in claim 10, characterized in that, It also includes a fourth and a fifth contact provided in the insulating cover, each of the first, fourth and fifth contacts being arranged along a second direction intersecting the first direction.

12. The element as claimed in claim 1, characterized in that, The epitaxial layer is an N-type epitaxial layer and has a thickness ranging from about 7 µm to about 12 µm.

13. A sensing device, characterized in that, include: Horizontal Hall element; A first vertical Hall element is disposed on the first side of the horizontal Hall element; as well as The second vertical Hall element is disposed on the second side of the horizontal Hall element. Each of the first and second vertical Hall elements includes: Substrate; An epitaxial layer is disposed above the substrate; The first terminal includes a doped region and a deep trench isolation (DTI) structure, wherein the doped region is disposed in the substrate, and the DTI structure passes through the epitaxial layer and is coupled to the doped region; and The second terminal includes a first contact disposed in the epitaxial layer.

14. The apparatus as claimed in claim 13, characterized in that, The first vertical Hall element, the second vertical Hall element, and the horizontal Hall element are implemented on a bipolar-CMOS-DMOS (BCD) platform.

15. The apparatus as claimed in claim 13, characterized in that, The DTI structure includes a conductive layer and an insulating layer, with the insulating layer surrounding the conductive layer.

16. The apparatus as claimed in claim 13, characterized in that, Each of the first and second vertical Hall elements includes a third terminal and a fourth terminal. The third and fourth terminals of the first vertical Hall element respectively include second and third contacts, which are disposed in the epitaxial layer. The first, second, and third contacts are arranged along a first direction. The third and fourth terminals of the second vertical Hall element respectively include a fourth and a fifth contact, which are disposed in the epitaxial layer. The first, fourth, and fifth contacts are arranged along a second direction intersecting the first direction.

17. The apparatus as claimed in claim 13, characterized in that, The epitaxial layer is an N-type epitaxial layer and has a thickness ranging from about 7 µm to about 12 µm.

18. A method for forming a vertical Hall element, characterized in that, include: An epitaxial layer is formed above a substrate, the substrate including doped regions disposed therein; A deep trench isolation (DTI) structure is formed that penetrates the epitaxial layer and is coupled to the doped region; as well as The first contact is formed in the epitaxial layer. The first terminal of the element includes the doped region and the DTI structure, and the second terminal of the element includes the first contact.

19. The method as described in claim 18, characterized in that, Also includes: A second and a third contact are formed in the epitaxial layer, and the first, second, and third contacts are arranged along a first direction. The third terminal of the component includes the second contact, and the fourth terminal of the component includes the third contact.

20. The method as described in claim 19, characterized in that, Also includes: First, second, third, and fourth shallow trench isolation (STI) layers are formed in this epitaxial layer; as well as The deep trench isolation (DTI) structure passes through the first STI layer, a first portion of the first STI layer and the second STI layer surround the second contact, the third STI layer surrounds the first contact, and a second portion of the first STI layer and the fourth STI layer surround the third contact.

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