Plasma processing apparatus, method of manufacturing electrode plate, and method of regenerating electrode plate
By using a contactless interface electrode plate structure made of a single silicon material, the problem of electrode plate damage caused by thermal stress and temperature difference is solved, achieving higher durability and reliability, and reducing the maintenance cost of plasma processing equipment.
CN122162215APending Publication Date: 2026-06-05TOKYO ELECTRON LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- TOKYO ELECTRON LTD
- Filing Date
- 2024-10-30
- Publication Date
- 2026-06-05
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Figure CN122162215A_ABST
Abstract
A plasma processing apparatus includes an electrode plate configured to oppose a substrate stage across a processing space, the electrode plate including a first plate composed of silicon and formed with a refrigerant flow path, and a second plate composed of silicon and provided with a buffer chamber that supplies a processing gas to the processing space, the electrode plate being integrally formed by joining the first plate and the second plate.
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