Semiconductor device

Abstract

This application relates to the field of semiconductor technology, and particularly to a semiconductor device. The semiconductor device includes a cavity and a process kit. The process kit includes a first kit disposed within the cavity. The first kit includes a main body, a transition portion, and a connecting portion. The main body is positioned between the cavity wall and the wafer, and is spaced apart from the cavity wall. The connecting portion is connected to the cavity, and the transition portion is connected between the main body and the connecting portion. The thickness of the main body is greater than the thickness of the transition portion. As the main part of the process kit that withstands sputtered particles and plasma bombardment, a thicker main body can effectively increase the heat capacity of the first kit at the main body, slow down the temperature rise rate of the main body after contact with sputtered particles and plasma, reduce temperature fluctuations of the first kit at the main body, and improve the temperature uniformity of the main body during the process.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a semiconductor device. Background Technology

[0002] In semiconductor manufacturing equipment, process kits are often used to physically isolate process areas from non-process areas. Taking physical vapor deposition (PVD) equipment as an example, during PVD, plasma within the equipment cavity bombards the target material under the influence of an electric field, forcing the target to sputter particles in all directions. A process kit, placed between the process and non-process areas within the cavity, can intercept sputtered particles diffusing from the process area to the non-process area, thereby reducing the likelihood of sputtered particles depositing on the cavity walls, maintaining cavity cleanliness, extending equipment maintenance cycles, and improving production efficiency.

[0003] However, if the temperature of the process kit is unstable or uneven, the detached fragments may easily adhere to or fall onto the wafer surface in subsequent process steps, causing wafer short circuits, open circuits or pattern defects, which seriously reduces the yield and reliability of the final product.

[0004] Therefore, improving the temperature stability and temperature uniformity of the process kit has become a pressing technical problem that needs to be solved. Summary of the Invention

[0005] This application discloses a semiconductor device for improving the temperature stability and uniformity of a process kit.

[0006] In a first aspect, this application provides a semiconductor device, which includes a cavity and a process kit. The process kit includes a first kit disposed within the cavity. The first kit includes a main body, a transition portion, and a connecting portion. The main body is disposed between the cavity wall of the cavity and the wafer, and is spaced apart from the cavity wall of the cavity. The connecting portion is connected to the cavity, and the transition portion is connected between the main body and the connecting portion. The thickness of the main body is greater than the thickness of the transition portion.

[0007] With this configuration, on the one hand, the main body, as the main part of the process kit that bears the bombardment of sputtered particles and plasma, can effectively increase the heat capacity of the first kit at the main body by being thicker, slow down the heating rate of the main body after contact with sputtered particles and plasma, reduce the temperature fluctuation of the first kit at the main body, and improve the temperature uniformity of the main body during the process.

[0008] On the other hand, the connecting part is the main path for the first kit to conduct heat to the cavity. The temperature of the first kit at the connecting part is usually lower than that of the first kit in other parts. The transition part, as the connection structure between the main body and the connecting part, can effectively reduce the heat conduction area between the main body and the connecting part by reducing the thickness of the transition part. This increases the thermal resistance between the main body and the connecting part, suppresses the unexpected loss of temperature in the main body, reduces the temperature difference between the side of the main body near the transition part and the side away from the transition part, reduces the temperature gradient of the main body, thereby improving the temperature uniformity of the main body, reducing the thermal stress concentration caused by excessive local temperature difference, suppressing the microcracks, warping or peeling of the film deposited on the surface of the first kit due to thermal stress imbalance, reducing the generation of debris in the cavity, improving the cleanliness of the surface of the workpiece, and improving the film deposition yield and consistency.

[0009] In one possible implementation, the semiconductor device further includes a target having a sputtering surface and a body having a sputtering region, wherein the angle between the line connecting the center of the sputtering surface and any point in the sputtering region and the normal to the sputtering surface is A, satisfying: 30°≤A≤75°.

[0010] After the plasma inside the cavity bombards the sputtering surface of the target, the resulting sputtered particles will sputter outward with the normal of the impact point as the center. The sputtering satisfies the forward-tilting cosine distribution model. The exit angle of the sputtered particles, that is, the angle between the exit direction of the outward sputtered particles and the normal of the sputtering surface, is concentrated in the range of 0° to 75°. Among them, sputtered particles with an exit angle of 0° to 30° will land in the process area of ​​the cavity and be deposited on the wafer, while particles with an exit angle of 30° to 75° will be deposited on the surface of the first kit during the process of exiting into the non-process area of ​​the cavity. This application uses the center of the sputtering surface of the target as a reference, and sets the part of the first kit that can be covered by sputtered particles ejected from the center of the sputtering surface at an exit angle of 30° to 75° as the main body of the first kit. By increasing the thickness of the main body, the heat capacity of sputtered particles in the main deposition area of ​​the first kit is increased, which slows down the heating rate of the first kit during the deposition process, reduces the temperature fluctuation of the first kit during the deposition process, suppresses microcracks, warping or peeling caused by excessive film accumulation or thermal stress imbalance, significantly reduces the generation of particles in the cavity, ensures process cleanliness, and improves the thin film deposition yield and consistency.

[0011] In one possible implementation, the main body includes a first wall segment and a second wall segment, the first wall segment being closer to the target material side than the second wall segment, and the first wall segment being connected between the transition portion and the second wall segment; Along the transition section to the second wall section, the thickness of the first wall section gradually increases.

[0012] As can be seen from the angular distribution characteristics of sputtered particles, the sputtered particle flux decreases with the increase of the ejection angle. Therefore, for the main body, the number of particles deposited in the first wall section of the main body near the target is less than the number of particles deposited in the second wall section of the main body away from the target. In this embodiment, by reducing the thickness of the first wall section near the target, the overall thermal capacity of the main body structure is increased, while the thermally conductive cross-sectional area between the first wall section and the transition section is reduced. This increases the thermal resistance between the main body and the transition section, reduces the heat loss of the main body, improves the overall temperature uniformity of the main body, reduces the temperature gradient of the main body, suppresses the thermal stress concentration of the film layer caused by local temperature differences, and reduces the risk of microcracks and peeling.

[0013] On the other hand, the gradually increasing thickness of the first wall section can effectively increase the thermal resistance between the main body and the transition section, while improving the stability of temperature change in the main body at the first wall section, reducing local heat flow concentration or temperature drop caused by abrupt changes in the cross section of the first wall section, reducing the temperature gradient of the main body, suppressing thermal stress concentration of the film layer caused by local temperature difference, and reducing the risk of microcracks and peeling.

[0014] In one possible implementation, the angle B between the line connecting the center of the sputtering surface and any point of the first wall segment and the normal of the sputtering surface satisfies: 55°≤B≤75°.

[0015] Based on the angular distribution characteristics of sputtered particles, it can be seen that the sputtering of particles for the first kit is mainly concentrated between 30° and 55°. This application takes the center of the sputtering surface of the target material as a reference and sets the part of the main body that can be covered by sputtered particles ejected from the center of the sputtering surface at an exit angle of 55° to 75° as the first wall segment. In this way, while maximizing the overall thermal capacity of the main body, the thermal conductivity cross-sectional area between the first wall segment and the transition part is reduced, thereby increasing the thermal resistance between the main body and the transition part, reducing the heat loss of the main body, improving the overall temperature uniformity of the main body, reducing the temperature gradient of the main body, suppressing the thermal stress concentration of the film layer caused by local temperature difference, and reducing the risk of microcracks and peeling.

[0016] In one possible implementation, the contact thermal resistance between the connection and the cavity is: ,satisfy: This embodiment controls the contact thermal resistance between the connecting part and the cavity. In this way, the heat transfer between the first kit and the cavity wall is reduced, the temperature loss of the first kit is reduced, the temperature stability and uniformity of the first kit are improved, and the microcracks, warping or peeling of the film deposited on the surface of the main body due to thermal stress imbalance are suppressed, the generation of debris in the cavity is reduced, the cleanliness of the surface of the workpiece is improved, and the film deposition yield and consistency are improved.

[0017] In one possible implementation, the connecting portion has a contact surface for contacting the cavity, the roughness of which is... Satisfying: 0.8μm≤ ≤5.6μm. This embodiment controls the roughness of the contact surface between the connecting part and the cavity to be ≤0.8μm. ≤5.6μm, so that the contact thermal resistance between the connection and the cavity is within At the same time, it can also avoid problems such as insufficient actual contact area between the connection part and the cavity, local stress concentration, and easy shedding of particles due to friction caused by excessively rough contact surfaces.

[0018] In one possible implementation, the semiconductor device further includes a target; the body includes a first end facing the target and a second end facing away from the target; a connecting portion is connected to the first end, or the connecting portion is connected to the second end; The semiconductor device also includes a first heating element located between the main body and the cavity wall.

[0019] Since the main body is the area with the highest deposition density in the first kit, it bears the greatest heat load and has the highest requirements for temperature stability during sputtering. This embodiment effectively shortens the heat transfer path between the first heating element and the main body by placing the first heating element between the main body and the cavity, reducing heat conduction delay, reducing the possibility of peeling off the deposited film layer on the main body, improving the cleanliness of the deposited part surface, and improving the film deposition yield and consistency.

[0020] At the same time, the fact that the thickness of the main body is greater than that of the transition part can effectively increase the thermal resistance between the main body and the connecting part, thereby increasing the thermal resistance between the main body and the cavity, reducing the heat loss of the main body, improving the temperature control accuracy, response speed and temperature uniformity of the first heating element for the first kit, and ensuring that the main body is always in a stable temperature field during the process, thereby further reducing the risk of the deposited film layer of the main body peeling off due to thermal stress fluctuations, and improving the film deposition yield and consistency.

[0021] In one possible implementation, the semiconductor device further includes a first heating element, and the cavity wall of the cavity facing the first heating element is at least partially inclined towards the first assembly. This allows some of the energy radiated by the first heating element to the cavity wall to be reflected back to the first assembly, thereby improving the utilization rate of the radiated energy from the first heating element by the first assembly and improving the temperature control efficiency of the first heating element for the first assembly.

[0022] In one possible implementation, the connecting part includes a first connecting part and a second connecting part. The first connecting part is connected to the main body part; the second connecting part is connected between the first connecting part and the cavity, and the width of the second connecting part is smaller than the width of the first connecting part. In this way, the contact area between the connecting part and the cavity is reduced, the thermal resistance between the connecting part and the cavity is increased, the heat loss of the first kit is reduced, and the temperature uniformity and stability of the first kit are improved.

[0023] In one possible implementation, the second connecting portion is arranged in a ring shape, or the second connecting portion includes a plurality of connecting bosses arranged at intervals along the circumference. The ring-shaped second connecting portion can effectively improve the uniformity of heat transfer between the second connecting portion and the cavity, and improve the temperature uniformity of the connecting portion. The boss-shaped second connecting portion can effectively reduce the contact area between the first component and the cavity, increase the thermal resistance between the first component and the cavity, reduce heat loss from the first component, and improve the temperature stability and temperature uniformity of the first component.

[0024] In one possible implementation, the first kit forms a reaction space for accommodating the wafer, the reaction space having a first opening; the process kit further includes a second kit disposed at the first opening and spaced apart from the first kit. This can block temperature transfer between the second kit and the first kit, achieving temperature control decoupling between the two kits, reducing temperature interference between them, and improving the stability of temperature control for both kits. Attached Figure Description

[0025] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0026] Figure 1 A schematic diagram of the structure of an embodiment of the semiconductor device provided in this application; Figure 2 A schematic diagram of another embodiment of the semiconductor device provided in this application; Figure 3 The temperature distribution cloud map of the first kit is shown when the roughness of the contact surface is 0.4 μm. Figure 4 The temperature distribution cloud map of the first kit when the roughness of the contact surface is 0.8 μm; Figure 5 The temperature distribution cloud map of the first kit is shown when the roughness of the contact surface is 5.2 μm. Figure 6 for Figure 1 Enlarged view at point S; Figure 7 for Figure 1 A schematic diagram of the structure of one embodiment of the connecting part; Figure 8 for Figure 1 A schematic diagram of another embodiment of the connecting part; Figure 9 for Figure 1 A schematic diagram of the main body structure.

[0027] Explanation of reference numerals in the attached figures: 100-Semiconductor Equipment 1-Craft kit; 11-First assembly, 111-Main body, 1111-First wall segment, 1112-Second wall segment, 1113-Sputtering area, 1114-Non-sputtering area, 1115-First end, 1116-Second end, 112-Connecting part, 1121-First connecting part, 1122-Second connecting part, 1123-Contact surface, 113-Reaction space, 1131-First opening, 1132-Second opening, 114-Transition part; 12-Second Set; 2-Cavity body, 21-Cavity wall; 3-Target material, 31-Sputtering surface, 32-Target target material, 33-Non-target target material; 4-Heating element, 41-First heating element, 42-Second heating element; 5-Drive unit; 6-Base. Detailed Implementation

[0028] This application proposes a semiconductor device, which may be a physical vapor deposition device, a magnetron sputtering device, a reactive sputtering device, an ion beam sputtering device, or other devices capable of generating sputtering particles. This application does not limit the scope of the device.

[0029] Please refer to Figure 1 In some embodiments, the semiconductor device 100 includes a cavity 2, a target 3, a base 6, and a process kit 1. The cavity 2 serves as a process reaction container to provide a controlled reaction environment for the semiconductor process. The cavity 2 is provided with an inlet through which plasma gas can enter the cavity 2.

[0030] The plasma gas can be argon (Ar), nitrogen (N2), xenon (Xe), krypton (Kr), neon (Ne), or other inert or reactive gases, and this application does not limit this.

[0031] The base 6 is disposed within the cavity 2 to support the wafer. In some embodiments, the base 6 includes a chuck and a drive unit. The chuck is used to support the wafer, and the drive unit is used to rotate the chuck during the process so that each area of ​​the wafer surface periodically passes through the main deposition area with a high sputtering particle flux, thereby improving the thin film deposition yield and consistency.

[0032] The target 3 is disposed within the cavity 2 and has a sputtering surface 31. The plasma gas within the cavity 2 can impact the sputtering surface 31 of the target 3 under the guidance of an electric field, forcing the sputtering surface 31 of the target 3 to sputter particles outward. The sputtered particles can be deposited on the wafer to form a functional thin film on the wafer surface. The number of targets 3 can be one or more, and this application does not limit this.

[0033] In some embodiments, the semiconductor device 100 includes a plurality of targets 3 and a driving device 5. The driving device 5 can select at least one of the plurality of targets 3 as the target target and achieve target switching by exposing the target target 32 ​​and blocking the non-target target 33. The specific switching method of the driving device 5 for the target is described later.

[0034] Cavity 2 has a process area and a non-process area. If the sputtered particles from target 3 land within the process area, they can be deposited on the wafer surface to form the functional thin film required by the wafer. If the sputtered particles land within the non-process area, they may deposit on the inner wall of cavity 2, causing contamination of cavity 2. Process kit 1 is located inside cavity 2, between the process area and the non-process area, to receive sputtered particles diffusing from the process area to the non-process area, thereby reducing the possibility of sputtered particles depositing on the cavity wall, maintaining the cleanliness of cavity 2, extending equipment maintenance cycles, and improving production efficiency.

[0035] However, the thermal radiation of the plasma and the continuous bombardment of sputtered particles cause a significant thermal load on process kit 1. Furthermore, the uneven distribution of sputtered particles on the surface of process kit 1 increases the temperature gradient, leading to the film deposited on the surface of process kit 1 peeling off due to thermal stress imbalance. These peeled fragments are prone to adhering to or falling onto the wafer surface during subsequent process steps, causing short circuits, open circuits, or pattern defects, severely reducing the yield and reliability of the final product.

[0036] To address the aforementioned issues, in one embodiment of this application, the process kit 1 includes a first kit 11 disposed within the cavity 2. The first kit 11 includes a main body 111, a transition portion 114, and a connecting portion 112. The main body 111 is disposed between the cavity wall of the cavity 2 and the wafer, and is spaced apart from the cavity wall of the cavity 2. The connecting portion 112 is connected to the cavity 2, and the transition portion 114 is connected between the main body 111 and the connecting portion 112. The thickness of the main body 111 is greater than the thickness of the transition portion 114.

[0037] With this configuration, on the one hand, the main body 111, as the main part of the process kit 1 that bears the bombardment of sputtered particles and plasma, can effectively increase the heat capacity of the first kit 11 at the main body 111 by being thicker, slow down the heating rate of the main body 111 after contact with sputtered particles and plasma, reduce the temperature fluctuation of the first kit 11 at the main body 111, and improve the temperature uniformity of the main body 111 during the process.

[0038] On the other hand, the connecting part 112 serves as the main path for heat conduction from the first kit 11 to the cavity 2. The temperature of the first kit 11 at the connecting part 112 is usually lower than the temperature of the first kit 11 in other parts. The transition part 114 serves as the connection structure between the main body 111 and the connecting part 112. By reducing the thickness of the transition part 114, the heat conduction area between the main body 111 and the connecting part 112 can be effectively reduced, thereby increasing the thermal resistance between the main body 111 and the connecting part 112, suppressing the unexpected loss of temperature in the main body 111, reducing the temperature difference between the side of the main body 111 near the transition part 114 and the side away from the transition part 114, reducing the temperature gradient of the main body 111, reducing the thermal stress concentration caused by excessive local temperature difference, suppressing the microcracks, warping or peeling of the film deposited on the surface of the first kit 11 due to thermal stress imbalance, reducing the generation of debris in the cavity 2, improving the cleanliness of the surface of the workpiece, and improving the film deposition yield and consistency.

[0039] The process kit 1 provided in this application will now be described in detail with reference to the accompanying drawings.

[0040] The process kit 1 includes a first kit 11, which is arranged around the target 3 and the base 6 to block the particles sputtered from the target 3 toward the cavity wall of the cavity 2, thereby reducing the possibility of sputtered particles sputtering to the cavity wall.

[0041] Please refer to Figure 1 and Figure 2The first kit 11 includes a main body 111 and a connecting part 112. The main body 111 serves as the main structure of the first kit 11. The main body 111 is cylindrical and forms a reaction space 113 around the body. The process area of ​​the cavity 2 is located in the reaction space. The reaction space 113 is provided with a first opening 1131 and a second opening 1132. The target material 3 is located near the first opening 1131. Plasma gas can enter the reaction space 113 through the second opening 1132 and reach the surface of the target material 3 through the first opening 1131, causing the target material 3 to sputter particles outward. The main body 111 can block the particles sputtered by the target material 3 towards the non-process area, thereby reducing the possibility of the sputtered particles of the target material 3 depositing on the cavity wall of the cavity 2.

[0042] The connecting part 112 is used to connect with the cavity 2 to realize the installation and positioning of the first kit 11 in the cavity 2. The connecting part 112 can be connected to the cavity 2 by means of threads, welding to the cavity 2, or snap-fit ​​connection to the cavity 2. This application does not limit this.

[0043] In some embodiments, the main body 111 and the cavity wall of the cavity 2 are spaced apart, and the first kit 11 is only connected to the cavity 2 by the connecting part 112. This reduces the heat conduction area between the first kit 11 and the cavity 2, increases the thermal resistance between the first kit 11 and the cavity 2, reduces the heat loss between the first kit 11 and the cavity 2, improves the thermal uniformity and stability of the first kit 11, reduces the temperature gradient on the surface of the first kit 11, reduces the possibility of microcracks, warping or peeling of the film on the surface of the first kit 11 due to thermal stress imbalance, reduces the generation of debris in the cavity 2, improves the cleanliness of the surface of the workpiece, and improves the film deposition yield and consistency.

[0044] The connection between the first assembly 11 and the cavity 2 can be varied. In some embodiments, the main body 111 includes a first end 1115 facing the target 3 and a second end 1116 facing away from the target 3; the connecting part 112 can be as follows: Figure 1 As shown, it is connected to the first end 1115 via the transition portion 114, or it can be like this. Figure 2 As shown, the second end 1116 of the main body 111 is connected to the transition portion 114, but this application does not limit this connection.

[0045] In some embodiments, the contact thermal resistance between the connecting portion 112 and the cavity 2 is... ,satisfy: This embodiment controls the contact thermal resistance between the connecting part 112 and the cavity 2. In this way, the heat transfer between the first kit 11 and the cavity wall is reduced, the heat loss of the first kit 11 is reduced, the temperature stability of the first kit 11 is improved, and the microcracks, warping or peeling of the film deposited on the surface of the main body 111 due to thermal stress imbalance are suppressed, the generation of debris in the cavity is reduced, the cleanliness of the wafer surface is improved, and the film deposition yield and consistency are improved.

[0046] In some embodiments, the contact thermal resistance between the connecting portion 112 and the cavity 2 is... ,satisfy: ≤ ≤ Within this range of limitations, the temperature loss of the first kit 11 can be effectively reduced, and the processing cost of the first kit 11 can also be reduced.

[0047] The contact thermal resistance between the connecting part 112 and the cavity 2 is such that... The above methods can be varied. The connecting portion 112 can control the contact thermal resistance with the cavity 2 by controlling the roughness of the contact surface 1123 with the cavity 2. Specifically, in some embodiments, the connecting portion 112 has a contact surface 1123 for contacting the cavity 2, and the roughness of the contact surface 1123 is... Satisfying: 0.8μm≤ ≤5.6μm. The aperture can be 1μm, 1.5μm, 2μm, 2.5μm, 3μm, 3.5μm, 4μm, 4.5μm, 5μm, or 5.5μm; this application does not impose any restrictions on this.

[0048] In this embodiment, the roughness of the contact surface 1123 between the connecting part 112 and the cavity 2 is controlled to be ≤0.8μm. ≤5.6μm, so that the contact thermal resistance between the connection 112 and the cavity 2 is within the specified range. At the same time, it can also avoid problems such as excessively high roughness of the contact surface, which could lead to an insufficient actual contact area between the connecting part 112 and the cavity 2, local stress concentration, and easy shedding of particles due to friction.

[0049] Specifically, please refer to Figures 3 to 5 , Figures 3 to 5 The temperature distribution cloud map of the first kit 11 under different contact surface roughness is shown.

[0050] in, Figure 3 The temperature distribution cloud diagram of the first component 11 when the roughness of the contact surface 1123 is 0.4 μm is shown. At this time, the contact thermal resistance between the connecting part 112 and the cavity 2 is... The highest temperature of the first kit 11 is 110℃, the lowest temperature is 85℃, and the temperature difference is 25℃.

[0051] Figure 4 The temperature distribution cloud diagram of the first component 11 is shown when the roughness of the contact surface 1123 is 0.8 μm. At this time, the contact thermal resistance between the connecting part 112 and the cavity 2 is... The highest temperature of the first kit 11 is 99.4℃, the lowest temperature is 81℃, and the temperature difference is 18.4℃.

[0052] Figure 5 The temperature distribution cloud diagram of the first component 11 is shown when the roughness of the contact surface 1123 is 5.2 μm. At this time, the contact thermal resistance between the connecting part 112 and the cavity 2 is... The highest temperature of the first kit 11 is 91.5℃, the lowest temperature is 88℃, and the temperature difference is 3.5℃.

[0053] Depend on Figures 3 to 5 It can be seen that, under the condition that other experimental conditions remain unchanged, the contact thermal resistance between the first component 11 and the cavity 2 increases with the increase of the roughness of the contact surface 1123 of the first component 11. As the contact thermal resistance increases, the temperature loss of the first component 11 decreases, and the temperature stability of the first component 11 becomes higher. Therefore, when the contact thermal resistance between the first component 11 and the cavity 2 is maintained at a certain level... When the roughness of the contact surface 1123 is maintained between 0.8μm and 5.6μm, the overall temperature gradient of the first kit 11 can be reduced, the temperature uniformity of the first kit 11 can be improved, the risk of thin film detachment of the first kit 11 can be reduced, the cleanliness of the wafer surface can be improved, and the thin film deposition yield and consistency can be improved.

[0054] It should be noted that the roughness of the contact area between the cavity 2 and the contact surface 1123 can be the same as or different from the roughness of the contact surface 1123 of the connecting part 112. This application does not impose any restrictions on this.

[0055] The contact thermal resistance between the connecting part 112 and the cavity 2 can be controlled by controlling the contact pressure of the contact surface with the cavity 2. Specifically, in some embodiments, the contact pressure between the connecting part 112 and the cavity 2 is P, satisfying: 0.001 MPa ≤ P ≤ 0.1 MPa. Under this contact pressure limit, the contact thermal resistance between the connecting part 112 and the cavity 2 can be controlled within the specified range. At the same time, it can also avoid the contact pressure between the connecting part 112 and the cavity 2 being too small, which would affect the stability of the connection between the connecting part 112 and the cavity 2.

[0056] The connecting part 112 can also control the contact thermal resistance with the cavity 2 by controlling the contact area of ​​its contact surface with the cavity 2. Specifically, in some embodiments, the contact area between the connecting part 112 and the cavity 2 is S, satisfying: 0.01㎡≤S≤0.06㎡, which ensures that the contact thermal resistance between the connecting part 112 and the cavity 2 is within a certain range. At the same time, it can also avoid the contact area between the connecting part 112 and the cavity 2 being too small, which would affect the stability of the connection between the connecting part 112 and the cavity 2.

[0057] In addition, the thermal conductivity between the connecting part 112 and the cavity 2 can be changed by altering the material of the connecting part 112, thereby reducing the contact thermal resistance between the connecting part 112 and the cavity 2. As exemplarily described above, the material of the contact surface between the connecting part 112 and the cavity 2 is aluminum. Compared with other materials, aluminum has lower material cost and lighter weight. It can reduce the processing cost of the first kit 11, reduce the weight of the first kit 11, and reduce the disassembly and assembly load of the first kit 11 while meeting the thermal resistance requirements of the contact between the connecting part 112 and the cavity 2, thus facilitating the disassembly, assembly, and maintenance of the first kit 11.

[0058] It should be noted that the material of the contact surface between the connecting part 112 and the cavity 2 is aluminum. The material of the connecting part 112 as a whole may be aluminum, or the material of the connecting part 112 on the contact surface may be aluminum. This application does not limit this.

[0059] Please refer to Figure 6 In some embodiments, the connecting portion 112 includes a first connecting portion 1121 and a second connecting portion 1122. The first connecting portion 1121 is connected to the main body portion 111. The second connecting portion 1122 is connected between the first connecting portion 1121 and the cavity 2. The second connecting portion 1122 is smaller in the radial direction of the first component than the first connecting portion 1121 in the radial direction of the first component. This reduces the contact area between the connecting portion 112 and the cavity 2, increases the thermal resistance between the connecting portion 112 and the cavity 2, reduces the heat loss of the first component 11, increases the contact thermal resistance between the first component 11 and the cavity 2, and improves the temperature uniformity of the first component 11.

[0060] Please refer to Figure 7 The shape of the second connecting part 1122 can be varied. In some embodiments, the second connecting part 1122 is arranged in a ring. The ring-shaped second connecting part 1122 can effectively improve the uniformity of heat transfer between the second connecting part 1122 and the cavity 2, and improve the uniformity of temperature change of the connecting part 112.

[0061] When the second connecting portion 1122 is arranged in a ring shape, the thermal resistance between the first assembly 11 and the cavity 2 can be adjusted by changing the ring width or the roughness of the contact surface with the cavity 2. For example, the width W of the second connecting portion 1122 satisfies the condition: 4mm ≤ W ≤ 25mm, thus ensuring that the contact thermal resistance between the connecting portion 1122 and the cavity 2 is within a certain range. At the same time, it can also avoid the contact pressure between the connecting part 112 and the cavity 2 being too small, which would affect the stability of the connection between the connecting part 112 and the cavity 2.

[0062] Please refer to Figure 8 In some other embodiments, the second connecting part 1122 may also include a plurality of connecting bosses arranged at intervals along the circumference. The second connecting part 1122, which is provided in the manner of connecting bosses, can effectively reduce the contact area between the first kit 11 and the cavity 2, increase the thermal resistance between the first kit 11 and the cavity 2, reduce the heat loss of the first kit 11, and improve the temperature stability and temperature uniformity of the first kit 11.

[0063] When the second connecting part 1122 includes multiple connecting bosses, the thermal resistance between the first kit 11 and the cavity 2 can be adjusted by changing the number of bosses, the width of the bosses, and the circumferential length of the bosses.

[0064] Please refer to Figure 1 The first assembly 11 also includes a transition portion 114, which connects the main body portion 111 and the connecting portion 112. In some embodiments, the thickness of the main body portion 111 is greater than the thickness of the transition portion 114, thereby increasing the thermal resistance between the main body portion 111 and the connecting portion 112, reducing the heat loss of the main body portion 111, and improving the temperature uniformity and temperature stability of the main body portion 111.

[0065] Specifically, the connecting portion 112 serves as the main path for heat conduction from the first assembly 11 to the cavity 2. The temperature of the first assembly 11 at the connecting portion 112 is typically lower than that of other parts of the first assembly 11. The transition portion 114 serves as the connection structure between the main body 111 and the connecting portion 112. By reducing the thickness of the transition portion 114, the heat conduction area between the main body 111 and the connecting portion 112 can be effectively reduced, thereby increasing the thermal resistance between the main body 111 and the connecting portion 112, suppressing the unexpected loss of temperature in the main body 111, reducing the temperature difference between the side of the main body 111 near the transition portion 114 and the side away from the transition portion 114, reducing the temperature gradient of the main body 111, reducing the concentration of thermal stress caused by excessive local temperature difference, suppressing the microcracks, warping, or peeling phenomena of the film deposited on the surface of the first assembly 11 due to thermal stress imbalance, reducing the generation of debris in the cavity 2, improving the cleanliness of the surface of the workpiece, and improving the film deposition yield and consistency.

[0066] In some embodiments, the angle between the line connecting the center of the sputtering surface 31 and any point on the main body 111 and the normal to the sputtering surface 31 is A, satisfying: 30°≤A≤75°. After the plasma in the cavity 2 bombards the sputtering surface 31 of the target material 3, the generated sputtered particles will be sputtered outward with the normal to the impact point as the center, and the sputtering satisfies the forward-tilting cosine distribution model, which can be referred to in detail. Figure 1When plasma a in cavity 2 impacts the sputtering surface 31 of target 3 under the action of electric field, it will cause the sputtering surface 31 of target 3 to sputter particles outward with normal b as the center. The closer to normal b, the greater the distribution of sputtered particles. When the angle A between the ejection direction of sputtered particles and normal b of sputtering surface 31 is within 0° to 75°, the distribution of sputtered particles is the largest. Sputtered particles with an ejection angle of 0° to 30° will land in the process area of ​​cavity 2 and be deposited on the wafer. Particles with an ejection angle of 30° to 75°, i.e., between c1 and c2 in the figure, will be deposited on the surface of the first kit 11 during the ejection process towards the non-process area of ​​cavity 2.

[0067] This application uses the center of the sputtering surface of the target as a reference, and sets the part of the first kit that can be covered by sputtered particles ejected from the center of the sputtering surface at an exit angle of 30° to 75° as the main body 111 of the first kit 11. The thickness of the main body 111 is used to effectively increase the heat capacity, slow down the heating rate of the first kit 11 during the deposition process, reduce the temperature fluctuation of the first kit 11 during the deposition process, suppress microcracks, warping or peeling caused by excessive film accumulation or thermal stress imbalance, significantly reduce the generation of particles in the cavity 2, ensure process cleanliness, and improve the thin film deposition yield and consistency.

[0068] It should be noted that the sputtering surface 31 of the target 3 refers to the area of ​​the target 3 that can be exposed to plasma gas and can receive plasma bombardment and release particles.

[0069] The center of the sputtering surface 31 of the target 3 refers to the geometric center of the effective working area of ​​the target 3 for receiving plasma bombardment and releasing sputtered particles. When the sputtering surface 31 of the target 3 is a regular shape, the center of the sputtering surface 31 of the target 3 is the center of symmetry of the regular geometric shape. When the sputtering surface 31 of the target 3 is an irregular shape, the center of the sputtering surface 31 of the target 3 can be defined as the centroid of the area of ​​the effective region of the sputtering surface 31, that is, the center of the uniform mass distribution of the region on the plane.

[0070] The line connecting the center of the sputtering surface 31 and any point of the main body 111 refers to the line connecting the center of the sputtering surface 31 and any point of the sputtering area 1113 of the main body 111. Specifically, when the target 3 is offset relative to the first kit 11, that is, when the axis of the target 3 does not coincide with the axis of the reaction space 113 formed by the first kit 11, the main body 111 may have a sputtering area 1113 within the sputtering range of the target 3 and a non-sputtering area 1114 outside the sputtering range of the target 3. Therefore, when the main body has a sputtering area 1113 and a non-sputtering area 1114 relative to the target 3, the line connecting the center of the sputtering surface 31 and any point of the main body 111 should be understood as the connection between the center of the sputtering surface 31 of the target 3 and any point of the sputtering area 1113 of the main body 111.

[0071] In some embodiments, the main body 111 includes a first wall segment 1111 and a second wall segment 1112. The first wall segment 1111 is closer to the target material 3 than the second wall segment 1112. The first end 1115 of the main body 111 is located on the side of the first wall segment 1111 facing away from the second wall segment 1112, and the second end 1116 of the main body 111 is located on the side of the second wall segment 1112 facing away from the first wall segment 1111. The first wall segment 1111 is connected to the transition portion 114 through the first end 1115, and is thus connected between the transition portion 114 and the second wall segment 1112. The thickness of the first wall segment 1111 is less than the thickness of the second wall segment 1112.

[0072] As can be seen from the angular distribution characteristics of sputtered particles, the sputtered particle flux decreases with the increase of the ejection angle. Therefore, for the main body 111, the number of particles deposited in the first wall section 1111 of the main body 111 near the target 3 is less than the number of particles deposited in the second wall section 1112 of the main body 111 away from the target 3. In this embodiment, by reducing the thickness of the first wall section 1111 on the side near the target 3, the thermally conductive cross-sectional area between the first wall section 1111 and the transition section 114 is reduced, thereby increasing the thermal resistance between the main body 111 and the transition section 114, reducing the heat loss of the main body 111, improving the overall temperature uniformity of the main body 111, reducing the temperature gradient of the main body 111, suppressing the thermal stress concentration of the film layer caused by local temperature difference, and reducing the risk of microcracks and peeling.

[0073] In some embodiments, the thickness of the first wall section 1111 gradually increases along the direction from the transition portion 114 to the second wall section 1112. This effectively increases the thermal resistance between the main body portion 111 and the transition portion 114, while improving the uniformity of temperature change of the main body portion 111 at the first wall section 1111. This reduces local heat flow concentration or temperature drop caused by abrupt changes in the cross-section of the first wall section 1111, reduces the temperature gradient of the main body portion 111, suppresses thermal stress concentration of the film layer caused by local temperature differences, and reduces the risk of microcracks and peeling.

[0074] Please refer to Figure 9In some embodiments, the angle B between the line connecting the center of the sputtering surface 31 and any point of the first wall segment 1111 and the normal of the sputtering surface 31 satisfies: 55°≤B≤75°. Based on the angular distribution characteristics of sputtered particles, it can be seen that the sputtering of particles for the first kit 11 is mainly concentrated between 30° and 55°. In this application, taking the center of the sputtering surface 31 of the target material 3 as a reference, the part of the main body 111 that can be covered by sputtered particles ejected from the center of the sputtering surface 31 at an exit angle of 55° to 75° is set as the first wall segment 1111. In this way, while maximizing the overall thermal capacity of the main body 111, the thermally conductive cross-sectional area between the first wall segment 1111 and the transition portion 114 is reduced, thereby increasing the thermal resistance between the main body 111 and the transition portion 114, reducing the heat loss of the main body 111, improving the overall temperature uniformity of the main body 111, reducing the temperature gradient of the main body 111, suppressing the thermal stress concentration of the film layer caused by local temperature difference, and reducing the risk of microcracks and peeling.

[0075] The process kit 1 also includes a second kit 12, which is located at the first opening 1131. The second kit 12 is used to block sputtered particles from the target 3 in the direction away from the base 6, so as to protect the cavity wall of the target 3 in the direction away from the base 6 from deposition contamination and particle bombardment damage.

[0076] In addition, in some embodiments, the second assembly 12 is connected to the driving device 5 and can expose the target material 32 and shield the non-target material 33 under the drive of the driving device 5, so as to realize the switching of the target material 3. Specifically, the second assembly is provided with at least one through hole. When the semiconductor device needs to switch the target material 3, the driving device 5 can first control the second assembly to move away from the target material 3 so as to separate the second assembly from the target material 3. Subsequently, the driving device 5 rotates the second assembly so that the through hole of the second assembly 12 is circumferentially aligned with the target material 3 to be switched; finally, the driving device 5 drives the second assembly to move closer to the target material 3 so that the target material 32 is exposed to the plasma environment through the through hole, while the non-target material 33 is shielded outside the reaction space by the body of the second assembly 12.

[0077] In some embodiments, the second kit 12 and the first kit 11 are spaced apart. This arrangement can, on the one hand, reduce heat loss from the second kit 12, reduce local temperature differences in the second kit 12, improve the temperature uniformity and stability of the second kit 12, and reduce the possibility of the deposited film peeling off from the second kit 12. On the other hand, it can block temperature transfer between the second kit 12 and the first kit 11, achieve temperature control decoupling between the second kit 12 and the first kit 11, reduce temperature interference between the second kit 12 and the first kit 11, and improve the stability of temperature control of the second kit 12 and the first kit 11.

[0078] Please refer to Figure 1 In some embodiments, the semiconductor device 100 further includes a heating element 4 for heating the process kit. Specifically, the heating element 4 may include a first heating element 41, which may be a resistance heating element, a radiant heating lamp, or an induction heating coil; this application does not limit the specific type of heating element. For example, the first heating element 41 may be a ring-shaped heating lamp, which surrounds the first kit 11 to heat it.

[0079] The first heating element 41 is used to dynamically adjust the heat input to the first assembly 11 during the process of the semiconductor equipment 100, so as to maintain the temperature stability of the first assembly 11 and reduce the risk of the deposited film layer of the first assembly 11 being detached due to thermal fluctuations.

[0080] Specifically, before the process begins, the first heating element 41 can preheat the first kit 11 so that the surface temperature of the first kit 11 reaches and is maintained within a preset temperature range. When the deposition process begins, the bombardment of sputtered particles and thermal radiation will cause the temperature of the first kit 11 to rise. At this time, the output power of the first heating element 41 can be dynamically adjusted according to the temperature rise of the first kit 11 to compensate for or offset the heat load fluctuation, thereby maintaining the surface temperature of the first kit 11 within the preset temperature range, thereby improving the temperature stability of the first kit 11, suppressing the thermal stress imbalance of the film layer, and reducing the risk of peeling.

[0081] It should be noted that there are multiple ways to obtain the temperature rise of the first component 11. In some embodiments, a temperature sensor can be arranged on or near the surface of the first component 11 to collect the temperature rise of the first component 11, or other methods can be used, and this application does not limit this.

[0082] In some embodiments, the first heating element 41 is located between the main body 111 and the cavity wall 21 of the cavity 2. Since the main body 111 is the area with the highest deposition density of the first assembly 11, it bears the largest heat load during sputtering and has the highest requirements for temperature stability. By placing the first heating element 41 between the main body 111 and the cavity 2, this embodiment effectively shortens the heat transfer path between the first heating element 41 and the main body 111, reduces heat conduction delay, reduces the possibility of peeling off the deposited film layer of the main body 111, improves the cleanliness of the deposited surface, and improves the film deposition yield and consistency.

[0083] Understandably, in other possible implementations, the first heating element 41 may also be disposed between the connecting portion 112 and the cavity wall of the cavity 2, or between the transition portion 114 and the cavity wall of the cavity 2, and this application does not limit this.

[0084] In one possible implementation, the semiconductor device 100 further includes a first heating element 41, and the cavity wall 21 of the cavity 2 facing the first heating element 41 is at least partially inclined toward the first assembly 11, so as to form a reflective surface between the cavity 2 and the first assembly 11, thereby reflecting back part of the energy radiated by the first heating element 41 to the cavity 2 back to the first assembly 11, improving the utilization rate of the radiated energy of the first heating element 41 by the first assembly 11, and improving the temperature control efficiency of the first heating element 41 for the first assembly 11.

[0085] It should be noted that the inclined surface of the cavity wall 21 can be an arc surface, a plane, or other regular or irregular reflective surface, and this application does not impose any restrictions on it.

[0086] In some embodiments, the semiconductor device 100 further includes a second heating element 42 located above the second assembly 12, which is used to dynamically adjust the heat input to the second assembly 12 during the process of the semiconductor device 100, so as to maintain the temperature stability of the second assembly 12 and reduce the risk of the deposited film layer of the second assembly 12 being detached due to thermal fluctuations.

[0087] The second heating element 42 can be a resistance heater, a radiant heating lamp, or an induction heating coil; this application does not limit the type of heating element. For example, the second heating element 42 is a heated chandelier, located on the side of the second assembly 12 facing away from the base 6.

[0088] Understandably, in addition to setting the first heating element 41 and the second heating element 42 to independently heat the first kit 11 and the second kit 12, a single heating element can also be used to simultaneously heat the first kit 11 and the second kit 12. Compared with the above method, the separate heating of the first kit 11 and the second kit 12 by the first heating element 41 and the second heating element 42 can effectively achieve independent temperature control of the first kit 11 and the second kit 12, avoiding temperature coupling and mutual interference caused by the difference in heat capacity, different heat dissipation conditions or changes in process stage when heating with a single heating element. This satisfies the different temperature control requirements of the first kit 11 and the second kit 12 and improves the temperature control effect of the heating element on the first kit 11 and the second kit 12.

[0089] The above-described preferred embodiments have further illustrated the purpose, technical solutions, and advantages of the present invention. It should be understood that the above are merely preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A semiconductor device, characterized by comprising: include: cavity; A process kit, comprising a first kit disposed within the cavity, the first kit comprising: a main body, a transition portion, and a connecting portion, the main body being spaced apart from the cavity wall of the cavity; the connecting portion being connected to the cavity; and the transition portion being connected between the main body and the connecting portion. The thickness of the main body is greater than the thickness of the transition portion.

2. The semiconductor device according to claim 1, wherein The semiconductor device further includes a target having a sputtering surface, and the main body having a sputtering region; Wherein, the angle between the line connecting the center of the sputtering surface and any point in the sputtering region and the normal of the sputtering surface is A, which satisfies: 30°≤A≤75°.

3. The semiconductor device according to claim 1 or 2, wherein The main body includes a first wall segment and a second wall segment. The first wall segment is closer to the target material than the second wall segment. The first wall segment is connected between the transition portion and the second wall segment. Along the transition portion toward the second wall segment, the thickness of the first wall segment gradually increases.

4. The semiconductor device according to any one of claims 1-3, characterized in that, The contact thermal resistance of the connecting portion with the cavity is , satisfies: .

5. The semiconductor device according to any one of claims 1-4, characterized in that, The connecting portion has a contact surface for contacting the cavity, the roughness of the contact surface is , and satisfies: 0.8 μm ≤ ≤ 5.6 μm.

6. The semiconductor device according to any one of claims 1 to 5, wherein The semiconductor device further includes a target; the main body includes a first end facing the target and a second end facing away from the target; the connecting portion is connected to the first end via the transition portion, or the connecting portion is connected to the second end via the transition portion; The semiconductor device further includes a first heating element located between the main body and the cavity wall.

7. The semiconductor device according to any one of claims 1 to 6, wherein The semiconductor device further includes a first heating element, and the cavity wall facing the first heating element is at least partially inclined toward one side of the first assembly.

8. The semiconductor device according to any one of claims 1 to 7, wherein The connecting portion includes a first connecting portion and a second connecting portion, wherein the first connecting portion is connected to the transition portion; The second connecting part is connected between the first connecting part and the cavity, and the cross-sectional area of ​​the second connecting part along the radial direction of the first kit is smaller than the cross-sectional area of ​​the first connecting part along the radial direction of the first kit.

9. The semiconductor device of claim 8, wherein, The second connecting portion is arranged in a ring shape, or the second connecting portion includes a plurality of connecting bosses arranged at intervals along the circumference.

10. The semiconductor device according to any one of claims 1 to 9, wherein The first kit forms a reaction space, the reaction space having a first opening; The process kit also includes a second kit, which is located at the first opening and spaced apart from the first kit.

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