A method, system, device, medium, and product for detecting surface uniformity of a semi-conductive layer of a cable termination

Abstract

This invention discloses a method, system, device, medium, and product for detecting the surface uniformity of the semiconductive layer in cable terminals, relating to the field of cable monitoring technology. It acquires multiple detection frequency data points for a sample of the cable terminal under test based on a preset detection frequency. Phase delay estimation is performed on each detection frequency data point based on a preset semiconductive layer thickness to obtain multiple phase factors. Uniformity mapping is performed on each phase factor and each detection frequency data point to obtain the corresponding equivalent uniformity coefficient. Surface uniformity is evaluated on the equivalent uniformity coefficient based on a pre-obtained standard uniformity coefficient to obtain the corresponding surface uniformity evaluation result. This invention solves the technical problem that existing methods for detecting the surface uniformity of the semiconductive layer in cable terminals often rely on tools such as micrometers for single-point thickness measurement, making it difficult to achieve global uniformity evaluation and reducing the reliability of cable terminal operation.

Description

Technical Field

[0001] This invention relates to the field of cable monitoring technology, and in particular to a method, system, equipment, medium and product for detecting the surface uniformity of the semiconductive layer of a cable terminal. Background Technology

[0002] In medium- and high-voltage power distribution systems, 10kV XLPE insulated cables, with their excellent electrical and mechanical properties, have become the core transmission carrier in urban power distribution networks, industrial power supply, and rail transit. Cable terminals, as critical accessories of cable lines, bear important functions in electric field control, insulation sealing, and mechanical protection. Their manufacturing and installation quality directly determines the operational reliability and service life of the entire line. The semi-conductive layer, as the core structure for homogenizing the internal electric field of the cable terminal, effectively smooths conductor edge burrs, eliminates electric field concentration caused by insulation interface defects, and suppresses the generation and development of partial discharge. It is a key component ensuring the long-term stable operation of the terminal.

[0003] Currently, during the production, processing, and on-site installation of the semiconductive layer in cable terminals, issues such as thickness deviation, excessive surface roughness, uneven material composition, and poor interface bonding are prone to occur. These non-uniformities significantly alter local dielectric properties and electric field distribution, leading to electric field distortion and exacerbated partial discharge. Long-term operation will accelerate insulation aging, ultimately causing insulation breakdown and line faults. Existing detection methods mostly rely on tools such as micrometers for single-point thickness measurement, making it difficult to achieve comprehensive uniformity assessment and reducing the reliability of cable terminal operation. Summary of the Invention

[0004] This invention provides a method, system, equipment, medium, and product for detecting the surface uniformity of the semiconductive layer in cable terminals. It solves the problems of thickness deviation, excessive surface roughness, uneven material composition, and poor interface bonding that easily occur in the production, processing, and on-site installation of the semiconductive layer in cable terminals. These non-uniformities significantly alter local dielectric properties and electric field distribution, leading to electric field distortion and exacerbated partial discharge. Long-term operation will accelerate insulation aging, ultimately causing insulation breakdown and line faults. Existing detection methods mostly rely on tools such as micrometers for single-point thickness measurement, making it difficult to achieve comprehensive uniformity assessment and reducing the reliability of cable terminal operation.

[0005] The first aspect of this invention provides a method for detecting the surface uniformity of the semiconductive layer of a cable termination, comprising: Multiple detection frequency data of the cable terminal sample under test are obtained based on a preset detection frequency. The phase delay of each detection frequency data is estimated based on a preset semiconductive layer thickness to obtain multiple phase factors. Based on the uniformity mapping of each phase factor and each detection frequency data, the corresponding equivalent uniformity coefficient is obtained; Based on the pre-obtained standard uniformity coefficient, the surface uniformity of the cable terminal sample under test is evaluated according to the equivalent uniformity coefficient, and the corresponding surface uniformity evaluation result is obtained.

[0006] By adopting the above technical solution, multiple sets of detection frequency data of the cable terminal sample under test are first obtained based on a preset detection frequency. Then, the phase delay of each detection frequency data is estimated separately in combination with the preset semiconductive layer thickness to obtain the accurate corresponding phase factor. This combines frequency characteristics with the physical structure of the semiconductive layer, truly reflecting the signal transmission delay characteristics in the medium. Next, based on the uniformity mapping between each phase factor and the detection frequency data, the equivalent uniformity coefficient is calculated, enabling a quantitative characterization of the sample surface uniformity. This integrates multi-dimensional information such as amplitude and phase into a single, intuitive evaluation index, avoiding the one-sidedness of single-parameter evaluation. Finally, the equivalent uniformity coefficient is compared and evaluated against a pre-determined standard uniformity coefficient to obtain standardized surface uniformity evaluation results. This eliminates systematic errors caused by differences between the detection system and the sample benchmark, making the evaluation results stable, objective, and comparable. This achieves efficient, accurate, and repeatable quantitative evaluation of the surface uniformity of the semiconductive layer of the cable terminal.

[0007] Optionally, the step of estimating the phase delay of each of the detection frequency data based on a preset semiconductive layer thickness to obtain multiple phase factors includes: The preset constant of pi is multiplied by the frequency of each of the detected frequency data to obtain multiple angular frequencies; Each of the angular frequencies is compared with a preset speed of light to obtain multiple wavenumbers; Each wavenumber is multiplied by a preset semiconducting layer thickness to obtain multiple phase factors.

[0008] By adopting the above technical solution and constructing a step-by-step calculation process for angular frequency, wavenumber, and phase factor based on the physical propagation laws of electromagnetic waves, the phase delay calculation results can be guaranteed to be accurate and reliable. At the same time, by using fixed physical constants such as pi and the speed of light in the calculation, deviations caused by manually set parameters can be effectively eliminated, ensuring good consistency in phase factor calculations at multiple frequency points. Furthermore, phase delay estimation can be completed quickly without complex models. This not only accurately reflects the phase change characteristics of microwaves after passing through the semiconducting layer, but also adapts to the parallel processing of multiple detection frequencies, providing stable and accurate parameter support for subsequent uniformity mapping and improving the accuracy and engineering practicality of the overall detection method.

[0009] Optionally, the detection frequency data includes the transmission coefficient amplitude and transmission coefficient phase, and the step of performing uniformity mapping based on each of the phase factors and each of the detection frequency data to obtain the corresponding equivalent uniformity coefficient includes: The preset first reference value and each of the transmission coefficient amplitudes are respectively processed by difference to obtain multiple first differences; The first reference value is summed with each of the transmission coefficient amplitudes to obtain multiple first sum values; Each of the first sums is compared with its corresponding first difference to obtain multiple first ratios. Each of the first ratios is compared with the corresponding phase factor to obtain multiple second ratios; Each of the second ratios is multiplied by the cosine of the corresponding transmission coefficient phase to obtain multiple first multiplication values; The squares of each of the first multipliers are averaged to obtain the corresponding equivalent uniformity coefficients.

[0010] By employing the aforementioned technical solution, the amplitude, phase factor, and phase of the transmission coefficient are subjected to multi-step standardized mathematical operations, forming a uniformity mapping process with clear physical meaning and rigorous logic. This process can fully integrate amplitude attenuation and phase change information, comprehensively reflecting the non-uniformity characteristics of the semiconducting layer material, such as thickness deviation and interface defects. Furthermore, it can effectively suppress detection noise and random interference, improving data stability and anti-interference capability, enabling the equivalent uniformity coefficient to objectively and quantitatively characterize the overall uniformity. Simultaneously, the comprehensive processing of multi-frequency point data can be completed without complex algorithms, ensuring the accuracy and repeatability of the equivalent uniformity coefficient. This provides a high-precision, high-reliability quantitative indicator for subsequent uniformity level evaluation, significantly improving the accuracy and practicality of the detection method.

[0011] Optionally, the step of evaluating the surface uniformity of the cable terminal sample under test based on the pre-acquired standard uniformity coefficient and the equivalent uniformity coefficient to obtain the corresponding surface uniformity evaluation result includes: The equivalent uniformity coefficient is compared with the pre-obtained standard uniformity coefficient to obtain the corresponding uniformity deviation value. The uniformity deviation value is compared with the standard uniformity coefficient to obtain the corresponding third ratio, and the absolute value of the third ratio is determined as the uniformity deviation coefficient. The surface uniformity evaluation result corresponding to the cable terminal sample under test is determined based on the uniformity deviation coefficient.

[0012] By adopting the above technical solution, using the standard uniformity coefficient as a benchmark, and processing the difference, ratio, and absolute value to obtain the uniformity deviation coefficient, the uniformity difference between the test sample and the standard sample can be transformed into a unified and intuitive quantitative indicator. This effectively eliminates systematic errors caused by the testing system, environmental conditions, and the equipment itself, making the evaluation results more objective, standardized, and comparable. Simultaneously, the calculation method is simple and efficient, with clear physical meaning, accurately reflecting the degree of deviation of the test sample relative to the standard sample, avoiding result bias caused by subjective judgment, and improving the standardization, accuracy, and repeatability of surface uniformity evaluation.

[0013] Optionally, the step of determining the surface uniformity evaluation result corresponding to the cable terminal sample under test based on the uniformity deviation coefficient includes: When the uniformity deviation coefficient is less than or equal to the preset first uniformity threshold, the surface uniformity is determined to be excellent as the surface uniformity evaluation result corresponding to the cable terminal sample under test. When the uniformity deviation coefficient is greater than the first uniformity threshold, it is determined whether the uniformity deviation coefficient is greater than the preset second uniformity threshold. When the uniformity deviation coefficient is greater than the second uniformity threshold, the surface uniformity failure is determined as the surface uniformity evaluation result corresponding to the cable terminal sample under test. When the uniformity deviation coefficient is less than or equal to the second uniformity threshold, the surface uniformity is determined to be qualified as the surface uniformity evaluation result corresponding to the cable terminal sample under test.

[0014] By adopting the above technical solution, and using a grading judgment based on the uniformity deviation coefficient and the first and second uniformity thresholds, a refined and standardized classification of the surface uniformity of the semiconductive layer of cable terminals can be achieved. The evaluation results are clearly distinguished into three levels: excellent, qualified, and unqualified. This not only provides a clear judgment logic and simple execution but also avoids the coarseness of a single threshold judgment. The dual-threshold tiered judgment method can accurately distinguish different degrees of uniformity deviation, meeting the needs of high-precision quality control and adapting to the practical application of rapid screening in engineering sites, effectively improving the objectivity and practicality of the evaluation results.

[0015] Optionally, the process of obtaining the standard uniformity coefficient is as follows: Based on the detection frequency, obtain multiple standard detection frequency data for standard cable terminal samples; Phase delay estimation and uniformity evaluation are performed on each of the standard detection frequency data to obtain the corresponding standard uniformity coefficient.

[0016] By adopting the above technical solution, a standard uniformity coefficient is obtained by using the detection frequency, phase delay estimation process, and uniformity mapping method that are completely consistent with the cable terminal sample under test. This ensures that the calculation process of the standard cable terminal sample and the cable terminal sample under test is highly consistent, with strong benchmarking and comparability. It can offset the systematic errors caused by equipment, environment, and algorithm to the greatest extent and ensure that the evaluation benchmark is true and reliable. At the same time, by using the standard cable terminal sample as a reference, a unified and standardized quality judgment benchmark can be established, avoiding evaluation deviations caused by arbitrary benchmark setting. This makes the final uniformity deviation coefficient more accurately reflect the actual defect degree of the sample under test.

[0017] A second aspect of the present invention provides a cable termination semiconductive layer surface uniformity detection system, comprising: The acquisition module is used to acquire multiple detection frequency data of the cable terminal sample under test based on a preset detection frequency, and to perform phase delay estimation on each of the detection frequency data based on a preset semiconductive layer thickness to obtain multiple phase factors. The uniformity evaluation module is used to perform uniformity mapping based on each of the phase factors and each of the detection frequency data to obtain the corresponding equivalent uniformity coefficient. The detection module is used to evaluate the surface uniformity of the cable terminal sample under test based on the pre-acquired standard uniformity coefficient and the equivalent uniformity coefficient, and obtain the corresponding surface uniformity evaluation result.

[0018] A third aspect of the present invention provides an electronic device, including a memory and a processor, wherein the memory stores a computer program, and when the computer program is executed by the processor, the processor performs the steps of the cable terminal semiconductive layer surface uniformity detection method as described above.

[0019] The fourth aspect of the present invention provides a computer-readable storage medium having a computer program stored thereon, wherein the computer program, when executed, implements the method for detecting the surface uniformity of the semiconductive layer of a cable terminal as described above.

[0020] The fifth aspect of the present invention provides a computer program product, the computer program product comprising a computer program stored on a non-transitory computer-readable storage medium, the computer program comprising program instructions, wherein, when the program instructions are executed by a computer, the computer performs the cable termination semiconductive layer surface uniformity detection method as described above.

[0021] As can be seen from the above technical solutions, the present invention has the following advantages: This invention acquires multiple detection frequency data points for a cable terminal sample based on a preset detection frequency. Phase delay is estimated for each detection frequency data point based on a preset semiconductive layer thickness, yielding multiple phase factors. Uniformity mapping is then performed between each phase factor and each detection frequency data point to obtain a corresponding equivalent uniformity coefficient. Finally, surface uniformity is evaluated using a pre-obtained standard uniformity coefficient to obtain the corresponding surface uniformity evaluation result. This invention overcomes the technical problem of existing cable terminal semiconductive layer surface uniformity detection methods, which rely heavily on micrometers and other tools for single-point thickness measurement, making it difficult to achieve global uniformity evaluation and reducing the reliability of cable terminal operation. Compared with traditional uniformity detection methods, this invention achieves a comprehensive, quantitative, and non-destructive assessment of the surface uniformity of the semiconductive layer by acquiring data at multiple detection frequencies, estimating phase delay, and calculating uniformity mapping. This effectively solves the problem that traditional single-point thickness measurement cannot reflect overall uniformity. Furthermore, by using the equivalent uniformity coefficient and the standard uniformity coefficient as quantitative criteria for surface uniformity assessment, it can sensitively identify key defects affecting the electric field distribution, such as thickness deviation, excessive surface roughness, material inhomogeneity, and poor interface bonding. This allows for early avoidance of partial discharge and insulation breakdown risks, thereby improving the reliability of cable terminal operation. Attached Figure Description

[0022] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0023] Figure 1 This is a flowchart of the steps for a method to detect the surface uniformity of the semiconductive layer of a cable terminal according to Embodiment 1 of the present invention. Figure 2 This is a flowchart of the steps for a method to detect the surface uniformity of the semiconductive layer of a cable terminal according to Embodiment 2 of the present invention. Figure 3 This is a structural block diagram of a cable terminal semiconductive layer surface uniformity detection system provided in Embodiment 3 of the present invention; Figure 4 This is a structural block diagram of an electronic device provided in Embodiment 4 of the present invention. Detailed Implementation

[0024] This invention provides a method, system, equipment, medium, and product for detecting the surface uniformity of the semiconductive layer in cable terminals. It addresses issues such as thickness deviations, excessive surface roughness, uneven material composition, and poor interface bonding that commonly occur during the production, processing, and on-site installation of the semiconductive layer in cable terminals. These non-uniformities significantly alter local dielectric properties and electric field distribution, leading to electric field distortion and exacerbated partial discharge. Long-term operation will accelerate insulation aging, ultimately causing insulation breakdown and line faults. Existing detection methods often rely on tools such as micrometers for single-point thickness measurements, making it difficult to achieve comprehensive uniformity assessment and reducing the reliability of cable terminal operation.

[0025] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention. It should be noted that in the optional embodiments of the present invention, the object information and other related data involved require the permission or consent of the object when the embodiments of the present invention are applied to specific products or technologies, and the collection, use, and processing of related data must comply with the relevant laws, regulations, and standards of the relevant countries and regions. That is to say, if the embodiments of the present invention involve data related to the object, it needs to be obtained with the authorization and consent of the object, the authorization and consent of the relevant departments, and in compliance with the relevant laws, regulations, and standards of the country and region. If personal information is involved in the embodiments, the acquisition of all personal information requires the consent of the individual. If sensitive information is involved, the separate consent of the information subject is required, and the embodiments also need to be implemented with the authorization and consent of the object.

[0026] Please see Figure 1 , Figure 1 This is a flowchart illustrating the steps of a method for detecting the surface uniformity of the semiconductive layer of a cable terminal, as provided in Embodiment 1 of the present invention.

[0027] This invention provides a method for detecting the surface uniformity of the semiconductive layer of a cable terminal, comprising: Step 101: Obtain multiple detection frequency data of the cable terminal sample under test based on the preset detection frequency, and estimate the phase delay of each detection frequency data based on the preset semiconductive layer thickness to obtain multiple phase factors.

[0028] The detection frequency refers to the pre-set microwave frequency points used for scanning and acquiring signals, typically multiple fixed frequencies within the 24GHz-30GHz range. Setting the detection frequency within the 24GHz-30GHz range ensures that the microwave signal has appropriate penetration depth and spatial resolution in the semiconductive layer of the cable terminal. This allows for effective penetration of the semiconductive layer to obtain internal uniformity information, and sensitive identification of critical issues such as surface defects, thickness deviations, and poor interface adhesion. The 24GHz-30GHz range is a commonly used and stable frequency band for industrial non-destructive testing, with low susceptibility to environmental interference and a high signal-to-noise ratio, ensuring stable and reliable multi-frequency data acquisition. Furthermore, it is highly compatible with conventional testing equipment such as waveguide probes and vector network analyzers, requiring no special hardware modifications and facilitating engineering implementation.

[0029] The cable terminal sample to be tested refers to a 10kV XLPE cable terminal sample whose surface uniformity of the semiconductive layer is to be tested.

[0030] Semiconducting layer thickness refers to the thickness value of the semiconducting layer at the cable termination specified in the standard or design.

[0031] Detection frequency data refers to the combined data of the amplitude and phase of the transmission coefficient measured at each frequency point.

[0032] The phase factor is a quantitative parameter that characterizes the phase delay caused by an electromagnetic wave passing through a semiconducting layer of a specified thickness.

[0033] In this embodiment of the invention, a waveguide probe is used to collect the amplitude and phase of the transmission coefficient of the semiconductive layer of the cable terminal sample under test at various frequency points according to a preset detection frequency, resulting in multiple detection frequency data. Each detection frequency data point is preprocessed, and based on a preset semiconductive layer thickness and a preset phase factor function, phase delay calculations are performed on each set of preprocessed detection frequency data to obtain multiple phase factors. For example, if the preset detection frequencies are 24GHz, 25GHz, 26GHz, 27GHz, 28GHz, 29GHz, and 30GHz, a waveguide probe is used to scan the cable terminal sample under test, recording the amplitude and phase of the transmission coefficient at seven frequency points: 24GHz, 25GHz, 26GHz, 27GHz, 28GHz, 29GHz, and 30GHz. The preset semiconductive layer thickness, each transmission coefficient amplitude, and the corresponding transmission coefficient phase are then input into the preset phase factor function to obtain the phase factor corresponding to each frequency point.

[0034] It should be noted that the phase factor function is specifically as follows:

[0035] in, For the first i Phase factor at each frequency point For the first i Wavenumber at each frequency point For the first i The frequency of each frequency point At the speed of light, The thickness of the semiconductive layer. i This is the index of the frequency point.

[0036] It should be noted that the waveguide probe is a microwave transceiver sensing component adapted to the 4–30 GHz microwave frequency band and used for non-destructive testing of the semiconductive layer of cable terminals. It is based on a standard rectangular waveguide with an open radiating surface at the front end and a microwave signal source and vector network analyzer at the rear end. It can transmit and receive transmitted / reflected microwave signals to the semiconductive layer and stably acquire the amplitude and phase of the transmission coefficient at different frequencies, providing raw test data for phase delay estimation and uniformity calculation.

[0037] It should be noted that preprocessing includes outlier removal (i.e., using the 3σ criterion or Grubbs criterion to statistically distinguish the amplitude and phase of the transmission coefficient at each frequency point, removing abnormal data caused by poor contact, environmental interference, and signal jitter, ensuring the authenticity and validity of the original data), baseline calibration, noise smoothing (i.e., smoothing and optimizing the sampling sequence of the amplitude and phase of the transmission coefficient through moving average filtering or wavelet filtering algorithms, filtering out random noise and high-frequency jitter, while retaining effective feature information that can reflect the uniformity changes of the semiconducting layer, making the data curve more stable and continuous), phase unwrapping, and amplitude normalization. Preprocessing removes abnormal data caused by poor probe contact, environmental electromagnetic interference, and signal drift, corrects baseline offset and random noise, ensures that the data at each frequency point is authentic, stable, and reliable, and avoids invalid data from interfering with the calculation of phase factor, equivalent uniformity coefficient, and uniformity deviation coefficient, thereby improving the stability, repeatability, and accuracy of the evaluation results of the entire detection process.

[0038] It should be noted that by using a preset detection frequency to achieve stable acquisition of data from multiple detection frequencies, comprehensive and reliable raw data support is provided for subsequent uniformity assessment. At the same time, by combining the preset semiconducting layer thickness, accurate estimation of phase delay is achieved, and the phase factor at each corresponding frequency point is quickly obtained. This ensures the accuracy and consistency of phase calculation and fully reflects the changes in the propagation characteristics of microwave signals after passing through the semiconducting layer. This lays a precise data foundation for subsequent calculation of the equivalent uniformity coefficient, effectively avoids the data bias caused by single-point detection, and improves the credibility and stability of the overall detection results.

[0039] Step 102: Perform uniformity mapping based on each phase factor and each detection frequency data to obtain the corresponding equivalent uniformity coefficient.

[0040] In this embodiment of the invention, each phase factor and each detection frequency data are input into a preset equivalent uniformity coefficient function to obtain the corresponding equivalent uniformity coefficient.

[0041] It should be noted that the equivalent uniformity coefficient function is specifically as follows:

[0042] in, The equivalent uniformity coefficient, For the first i Transmission coefficient amplitude at each frequency point For the first i The phase of the transmission coefficient at each frequency point N This represents the total number of frequency points.

[0043] In another embodiment, a preset first reference value is subtracted from each transmission coefficient amplitude to obtain multiple first differences. The first reference value is then added to each transmission coefficient amplitude to obtain multiple first sums. Each first sum is then compared to its corresponding first difference to obtain multiple first ratios. Each first ratio is then compared to its corresponding phase factor to obtain multiple second ratios. Each second ratio is then multiplied by the cosine of the corresponding transmission coefficient phase to obtain multiple first multiplications. The squares of each first multiplication are then averaged to obtain the corresponding equivalent uniformity coefficient.

[0044] It should be noted that by mapping uniformity based on various phase factors and detection frequency data, the amplitude, phase, and phase delay information of the transmission coefficient at multiple frequency points are uniformly transformed into an equivalent uniformity coefficient that can intuitively characterize the overall uniformity. This enables the quantification, global, and comprehensive evaluation of the surface uniformity of the semiconducting layer, effectively avoiding the limitations of single-parameter judgment. It truly reflects the micro-uniformity characteristics such as thickness deviation, surface roughness, and material inhomogeneity, making the uniformity evaluation results more accurate and representative. At the same time, the calculation logic is clear and highly repeatable.

[0045] Step 103: Based on the pre-obtained standard uniformity coefficient, evaluate the surface uniformity of the cable terminal sample under test according to the equivalent uniformity coefficient, and obtain the corresponding surface uniformity evaluation result.

[0046] The standard uniformity coefficient refers to the reference coefficient measured by the calculation process of step 101-102 using a standard cable terminal sample with ideal surface uniformity.

[0047] The surface uniformity evaluation result refers to the final judgment conclusion based on the comparison between the deviation coefficient and the threshold, including three results: excellent, qualified, and unqualified.

[0048] In this embodiment of the invention, the equivalent uniformity coefficient measured by the cable terminal sample to be tested is compared with the standard uniformity coefficient measured by the standard cable terminal sample in advance to obtain the uniformity deviation value. Then, the ratio of the uniformity deviation value to the standard uniformity coefficient is processed, and the absolute value of the ratio is taken as the uniformity deviation coefficient. Based on the comparison relationship between the uniformity deviation coefficient and the preset first uniformity threshold and the preset second uniformity threshold, the corresponding surface uniformity evaluation result is obtained.

[0049] In another embodiment, the equivalent uniformity coefficient measured from the cable terminal sample under test and the standard uniformity coefficient measured from a standard cable terminal sample are input into a preset uniformity deviation function to obtain the corresponding uniformity deviation coefficient. When the uniformity deviation coefficient is less than or equal to 5%, the surface uniformity evaluation result is determined to be excellent. When the uniformity deviation coefficient is within the range of (5% to 15%), the surface uniformity evaluation result is determined to be acceptable. When the uniformity deviation coefficient is greater than 15%, the surface uniformity evaluation result is determined to be unacceptable.

[0050] It should be noted that by using the standard uniformity coefficient as a unified benchmark to compare and evaluate the equivalent uniformity coefficient, the surface uniformity of the semiconductive layer of cable terminals can be quantitatively, standardizedly, and hierarchically determined. This effectively eliminates systematic errors caused by differences in the testing environment, equipment, and samples, making the evaluation results more objective, stable, and reproducible. This method can intuitively distinguish between good and bad uniformity levels and accurately identify unqualified samples. It facilitates quality control in the production process and rapid judgment in on-site operation and maintenance, significantly improving the practicality and authority of the test conclusions and providing a clear quality judgment basis for the safe and reliable operation of cable terminals.

[0051] It is worth mentioning that multiple sets of detection frequency data for the cable terminal sample under test are obtained based on a preset detection frequency. Then, combined with a preset semiconductive layer thickness, phase delay estimation is performed on each detection frequency data to obtain a precise corresponding phase factor. This combines frequency characteristics with the physical structure of the semiconductive layer, truly reflecting the signal transmission delay characteristics in the medium. Furthermore, by mapping the phase factor to the detection frequency data for uniformity, an equivalent uniformity coefficient is calculated. This enables a quantitative characterization of the sample surface uniformity, integrating multi-dimensional information such as amplitude and phase into a single, intuitive evaluation index, avoiding the one-sidedness of single-parameter evaluation. Finally, a comparative evaluation of the equivalent uniformity coefficient is conducted based on a pre-determined standard uniformity coefficient, obtaining standardized surface uniformity evaluation results. This eliminates systematic errors caused by differences between the detection system and the sample benchmark, making the evaluation results stable, objective, and comparable. This achieves efficient, accurate, and repeatable quantitative evaluation of the surface uniformity of the semiconductive layer of the cable terminal.

[0052] In this embodiment of the invention, multiple detection frequency data of the cable terminal sample under test are acquired based on a preset detection frequency. Phase delay estimation is performed on each detection frequency data based on a preset semiconductive layer thickness to obtain multiple phase factors. Uniformity mapping is then performed on each phase factor and each detection frequency data to obtain the corresponding equivalent uniformity coefficient. Surface uniformity is evaluated on the equivalent uniformity coefficient based on a pre-obtained standard uniformity coefficient to obtain the corresponding surface uniformity evaluation result. This overcomes the technical problem that existing methods for detecting the surface uniformity of the semiconductive layer in cable terminals often rely on tools such as micrometers for single-point thickness measurement, making it difficult to achieve full-area uniformity evaluation and reducing the reliability of cable terminal operation. Compared with traditional uniformity detection methods, this invention achieves a comprehensive, quantitative, and non-destructive assessment of the surface uniformity of the semiconductive layer by acquiring data at multiple detection frequencies, estimating phase delay, and calculating uniformity mapping. This effectively solves the problem that traditional single-point thickness measurement cannot reflect overall uniformity. Furthermore, by using the equivalent uniformity coefficient and the standard uniformity coefficient as quantitative criteria for surface uniformity assessment, it can sensitively identify key defects affecting the electric field distribution, such as thickness deviation, excessive surface roughness, material inhomogeneity, and poor interface bonding. This allows for early avoidance of partial discharge and insulation breakdown risks, thereby improving the reliability of cable terminal operation.

[0053] Please see Figure 2 , Figure 2 This is a flowchart illustrating the steps of a method for detecting the surface uniformity of a semiconductive layer at a cable terminal, as provided in Embodiment 2 of the present invention.

[0054] This invention provides a method for detecting the surface uniformity of the semiconductive layer of a cable terminal, comprising: Step 201: Obtain multiple detection frequency data of the cable terminal sample under test based on the preset detection frequency, and estimate the phase delay of each detection frequency data based on the preset semiconductive layer thickness to obtain multiple phase factors.

[0055] Further, step 201 includes the following sub-steps: S11. Multiply the preset pi constant with the frequency of each detection frequency data to obtain multiple angular frequencies.

[0056] The constant of pi refers to a pre-defined mathematical constant, usually taken as 2π.

[0057] Angular frequency is a physical quantity that describes how fast a microwave signal changes periodically.

[0058] In this embodiment of the invention, a preset constant of pi is multiplied by the frequency of each detected frequency data to obtain multiple angular frequencies. For example, the first... i angular frequency at each frequency point = 2π No. iThe frequency of each frequency point.

[0059] It should be noted that the angular frequency is obtained by multiplying the preset pi constant with each detection frequency. The physical definition is clear, the calculation basis is rigorous, and it strictly follows the basic propagation law of electromagnetic waves. It can provide accurate basic parameters for subsequent wave number and phase factor calculations. Moreover, this calculation method can be completed by simple multiplication. The operation is simple and efficient, without complex models, and can be adapted to multi-frequency point data synchronous processing.

[0060] S12. Ratio each angular frequency to a preset speed of light to obtain multiple wavenumbers.

[0061] Wave number refers to a physical quantity that characterizes the number of electromagnetic wave cycles per unit length. It reflects the spatial characteristics of microwave propagation in a medium and is a core intermediate quantity for calculating the phase factor.

[0062] The speed of light refers to the speed of light in a vacuum. It is a fixed physical constant and serves as the standard value for the propagation speed of microwaves.

[0063] In this embodiment of the invention, each angular frequency is compared with a preset speed of light to obtain multiple wavenumbers. For example, the wavenumber is... i The wave number at the i-th frequency point = the i-th i Angular frequency at a given frequency point / speed of light.

[0064] S13. Multiply each wavenumber by the preset semiconducting layer thickness to obtain multiple phase factors.

[0065] In this embodiment of the invention, the multiplication between each wavenumber and a preset semiconductive layer thickness is calculated to obtain multiple phase factors. For example, the first... i Phase factor at the nth frequency point = the nth i Wave number at each frequency point Semiconducting layer thickness.

[0066] It should be noted that by constructing a step-by-step calculation process for angular frequency, wavenumber, and phase factor based on the physical propagation laws of electromagnetic waves, the accuracy and reliability of the phase delay calculation results can be guaranteed. At the same time, by using fixed physical constants such as pi and the speed of light in the calculation, deviations caused by manually set parameters can be effectively eliminated, ensuring good consistency in phase factor calculations at multiple frequency points. Furthermore, phase delay estimation can be completed quickly without complex models, accurately reflecting the phase change characteristics of microwaves after passing through the semiconducting layer, and adapting to parallel processing of multiple detection frequencies. This provides stable and accurate parameter support for subsequent uniformity mapping, improving the accuracy and engineering practicality of the overall detection method.

[0067] Step 202: Perform uniformity mapping based on each phase factor and each detection frequency data to obtain the corresponding equivalent uniformity coefficient.

[0068] Furthermore, the detection frequency data includes the transmission coefficient amplitude and transmission coefficient phase, and step 202 includes the following sub-steps: S21. The preset first reference value and each transmission coefficient amplitude are respectively processed by difference to obtain multiple first difference values.

[0069] The first reference value refers to the fixed reference value used for the normalization calculation of the transmission coefficient amplitude, which is usually taken as 1.

[0070] Transmission coefficient amplitude refers to the ratio of the output signal amplitude to the input signal amplitude after the microwave signal passes through the semiconductive layer.

[0071] In this embodiment of the invention, the difference between a preset first reference value and each transmission coefficient amplitude is calculated to obtain multiple first differences. For example, the first... i The first difference between each frequency point = 1 - the first i The amplitude of the transmission coefficient at each frequency point.

[0072] It should be noted that the first difference is obtained by subtracting the preset first reference value from the amplitude of each transmission coefficient. This normalizes the amplitude of the transmission coefficient, effectively eliminating the systematic error caused by the signal reference offset, and providing a unified basis for comparison of amplitude data from different frequencies and samples. This step is simple to calculate and has a clear physical meaning. It can accurately highlight the amount of amplitude deviation from the ideal state, providing stable and reliable intermediate data for subsequent normalization ratio calculations. This improves the consistency and anti-interference ability of the equivalent uniformity coefficient calculation, making the final uniformity evaluation result more objective and accurate.

[0073] S22. The first reference value is summed with each transmission coefficient amplitude to obtain multiple first sum values.

[0074] In this embodiment of the invention, the sum between the first reference value and each transmission coefficient amplitude is calculated to obtain multiple first sums. For example, the first... i The first sum of the frequency points = 1 + the first i The amplitude of the transmission coefficient at each frequency point.

[0075] It should be noted that the first summation obtained by adding the first reference value to the amplitudes of each transmission coefficient can form a symmetrical complementary term for normalization calculation with the first difference value. This provides a stable denominator reference for subsequent ratio calculations, effectively suppressing interference caused by random noise and amplitude fluctuations in the detection signal. Moreover, this addition operation is simple and intuitive with low computational load, and can be adapted to multi-frequency data synchronous processing, ensuring the consistency and repeatability of data processing at different frequency points. This makes the subsequently obtained first ratio more stable and comparable, providing reliable support for the accurate calculation of the equivalent uniformity coefficient and improving the credibility of the uniformity mapping results.

[0076] S23. Ratio each first sum with its corresponding first difference to obtain multiple first ratios.

[0077] In this embodiment of the invention, the ratio between each first sum and its corresponding first difference is calculated to obtain multiple first ratios. For example, the first... i The first ratio of the frequency points = the first i The first sum of the frequency points / the first i The first difference between each frequency point.

[0078] It should be noted that the first ratio is obtained by comparing the first sum with the corresponding first difference. This can standardize and normalize the amplitude of the transmission coefficient, unify the amplitude information of different frequencies and signal intensities into a comparable numerical range, and this ratio calculation can significantly suppress the system deviation caused by environmental noise, equipment drift and signal attenuation, highlight the characteristic changes caused by the inhomogeneity of the semiconducting layer, and make the data more stable and the results more reliable.

[0079] S24. Ratio each first ratio with the corresponding phase factor to obtain multiple second ratios.

[0080] In this embodiment of the invention, the ratio between each first ratio and the corresponding phase factor is calculated to obtain multiple second ratios. For example, the first... i The second ratio at the first frequency point = the first i The first ratio of the frequency points / the first i Phase factor at each frequency point.

[0081] It should be noted that by processing the first ratio with the corresponding phase factor to obtain the second ratio, the amplitude normalization information and phase delay characteristics can be organically integrated, while taking into account both signal attenuation and phase change, two key pieces of information, to more comprehensively reflect the uniformity differences of the semiconducting layer. This step can eliminate the numerical influence of the phase factor, so that the data at different frequency points have a unified mapping benchmark, and improve the consistency and comparability of multi-frequency calculation results.

[0082] S25. Multiply each second ratio with the cosine value of the corresponding transmission coefficient phase to obtain multiple first multiplication values.

[0083] In this embodiment of the invention, the multiplication between each second ratio and the cosine value of the corresponding transmission coefficient phase is calculated to obtain multiple first multiplication values. For example, the first... i The first multiplication value of the nth frequency point = the nth i The second ratio at each frequency point cos(the) i The transmission coefficient phase at each frequency point.

[0084] It is worth mentioning that multiplying the second ratio by the cosine of the corresponding transmission coefficient phase to obtain the first multiplication value can fully integrate the amplitude characteristics, phase delay characteristics and actual phase information, and comprehensively capture the comprehensive changes in microwave signals caused by the inhomogeneity of the semiconducting layer. This step can effectively extract the effective feature components in the phase, weaken random phase noise interference, and make the data more in line with the uniformity characterization requirements.

[0085] S26. Average the squares of each first multiplier to obtain the corresponding equivalent uniformity coefficient.

[0086] In this embodiment of the invention, the mean of the squares of each first multiplier is calculated to obtain the corresponding equivalent uniformity coefficient.

[0087] It is worth mentioning that the equivalent uniformity coefficient is obtained by averaging the squared values ​​of each first multiplier. This can comprehensively weight and smooth the uniformity feature information under multiple frequency points, effectively suppressing random errors and noise fluctuations at single frequency points, and making the final result more reflective of the global uniformity characteristics of the semiconducting layer. The squaring process can amplify the feature differences caused by non-uniform defects and improve the detection sensitivity of small defects, while the averaging process can realize the fusion output of multi-frequency data to obtain a stable, unique, and directly usable quantitative index for evaluation.

[0088] It should be noted that by performing multi-step normalized mathematical operations on the amplitude, phase factor, and phase of the transmission coefficient, a uniformity mapping process with clear physical meaning and rigorous logic is formed. This process can fully integrate amplitude attenuation and phase change information, comprehensively reflecting the non-uniformity characteristics of the semiconducting layer material, such as thickness deviation and interface defects. Furthermore, it can effectively suppress detection noise and random interference, improving data stability and anti-interference capability, enabling the equivalent uniformity coefficient to objectively and quantitatively characterize the overall uniformity. Simultaneously, it can complete the comprehensive processing of multi-frequency point data without complex algorithms, ensuring the accuracy and repeatability of the equivalent uniformity coefficient. This provides a high-precision, high-reliability quantitative indicator for subsequent uniformity level evaluation, significantly improving the accuracy and practicality of the detection method.

[0089] Step 203: Perform difference processing on the equivalent uniformity coefficient and the pre-obtained standard uniformity coefficient to obtain the corresponding uniformity deviation value.

[0090] In this embodiment of the invention, the difference between the equivalent uniformity coefficient and the pre-obtained standard uniformity coefficient is calculated to obtain the corresponding uniformity deviation value.

[0091] It is worth mentioning that by taking the difference between the equivalent uniformity coefficient and the standard uniformity coefficient to obtain the uniformity deviation value, the uniformity difference between the test sample and the standard sample can be directly and intuitively quantified. This accurately reflects the degree of deviation of the test semiconducting layer from the ideal state, and can retain the difference characteristics to the greatest extent and avoid information distortion caused by complex transformations. At the same time, using a unified standard coefficient as a benchmark can effectively offset the systematic errors caused by the detection environment, equipment drift and algorithm process, making the deviation results stable, objective and reproducible.

[0092] It should be noted that the process of obtaining the standard uniformity coefficient is as follows: A1. Obtain multiple standard testing frequency data for standard cable terminal samples based on the testing frequency.

[0093] A standard cable terminal sample refers to a qualified standard sample with a uniform semiconductive layer surface, consistent thickness, and no defects.

[0094] Standard testing frequency data refers to the testing frequency data of standard cable terminal samples.

[0095] In this embodiment of the invention, the same detection frequency and detection conditions as the cable terminal sample under test are used. A waveguide probe is used to scan and measure the standard cable terminal sample whose surface uniformity meets the ideal standard, and the amplitude and phase of the transmission coefficient of the standard cable terminal sample at each frequency point are obtained to obtain multiple standard detection frequency data.

[0096] A2. Perform phase delay estimation and uniformity evaluation on the data of each standard detection frequency to obtain the corresponding standard uniformity coefficient.

[0097] In this embodiment of the invention, according to the calculation logic of steps 201-203, phase delay estimation and uniformity mapping are performed sequentially on each standard detection frequency data to obtain the corresponding standard uniformity coefficient.

[0098] It should be noted that by using the same detection frequency, phase delay estimation process, and uniformity mapping method as the cable terminal sample under test, the standard uniformity coefficient is obtained. This ensures that the calculation process of the standard cable terminal sample and the cable terminal sample under test is highly consistent, with strong benchmarking and comparability. This can offset the systematic errors caused by equipment, environment, and algorithm to the greatest extent, ensuring the authenticity and reliability of the evaluation benchmark. At the same time, by using the standard cable terminal sample as a reference, a unified and standardized quality judgment benchmark can be established, avoiding evaluation deviations caused by arbitrary benchmark setting. This makes the final uniformity deviation coefficient more accurately reflect the actual defect degree of the sample under test.

[0099] Step 204: Ratio the uniformity deviation value with the standard uniformity coefficient to obtain the corresponding third ratio, and determine the absolute value of the third ratio as the uniformity deviation coefficient.

[0100] In this embodiment of the invention, the ratio between the uniformity deviation value and the standard uniformity coefficient is calculated to obtain the corresponding third ratio, and the absolute value of the third ratio is determined as the uniformity deviation coefficient.

[0101] In another embodiment, the equivalent uniformity coefficient and the pre-acquired standard uniformity coefficient are input into a preset uniformity deviation function to obtain the corresponding uniformity deviation coefficient.

[0102] It should be noted that the uniformity deviation function is as follows:

[0103] in, This is the uniformity deviation coefficient. The equivalent uniformity coefficient, The standard uniformity coefficient is denoted as .

[0104] It is worth mentioning that by comparing the uniformity deviation value with the standard uniformity coefficient and taking the absolute value to obtain the uniformity deviation coefficient, the absolute deviation can be transformed into a relative deviation, realizing the standardized, normalized, and quantitative evaluation of the uniformity of the sample under test. This method can eliminate the benchmark differences caused by different samples and different testing conditions, making the results comparable across samples and scenarios. At the same time, the absolute value processing can avoid the interference of positive and negative signs, focusing only on the degree of deviation itself. The calculation process is simple and stable, with clear physical meaning, and can intuitively reflect the percentage deviation of the sample under test relative to the standard sample. It provides a unified, objective, and highly robust core indicator for subsequent grading judgment, greatly improving the accuracy, standardization, and engineering practicality of the evaluation results.

[0105] Step 205: Determine the surface uniformity evaluation result corresponding to the cable terminal sample under test based on the uniformity deviation coefficient.

[0106] It should be noted that, using the standard uniformity coefficient as a benchmark, the uniformity deviation coefficient is obtained through difference, ratio, and absolute value processing. This transforms the uniformity difference between the test sample and the standard sample into a unified and intuitive quantitative indicator, effectively eliminating systematic errors caused by the testing system, environmental conditions, and the equipment itself. This makes the evaluation results more objective, standardized, and comparable. Furthermore, the calculation method is simple and efficient, with clear physical meaning, accurately reflecting the degree of deviation of the test sample relative to the standard sample. This avoids result bias caused by subjective judgment and improves the standardization, accuracy, and repeatability of surface uniformity evaluation.

[0107] Furthermore, step 205 includes the following sub-steps: S31. When the uniformity deviation coefficient is less than or equal to the preset first uniformity threshold, the surface uniformity is determined to be excellent as the surface uniformity evaluation result corresponding to the cable terminal sample under test.

[0108] The first uniformity threshold refers to the upper limit set for judging an excellent level, typically set at 5%.

[0109] In this embodiment of the invention, when the uniformity deviation coefficient is less than or equal to a preset first uniformity threshold, the surface uniformity of the semiconductive layer of the cable terminal under test is determined to meet the high standard requirements, and the surface uniformity is determined to be excellent as the corresponding surface uniformity evaluation result. For example, when the uniformity deviation coefficient is less than or equal to 5%, the surface uniformity evaluation result is determined to be excellent.

[0110] It is worth mentioning that using a uniformity deviation coefficient not greater than the first uniformity threshold as the criterion for judging excellent surface uniformity can accurately and stably identify high-quality samples with uniformity close to the standard sample. The judgment rule is intuitive and clear, and the physical meaning is clear. This condition can effectively distinguish small uniformity differences, meet the requirements of high-precision quality grading and factory acceptance in production and manufacturing. At the same time, setting the first uniformity threshold to 5% can avoid misjudgments caused by detection noise and environmental fluctuations, and ensure that the excellent grade judgment results are objective and highly reliable.

[0111] S32. When the uniformity deviation coefficient is greater than the first uniformity threshold, determine whether the uniformity deviation coefficient is greater than the preset second uniformity threshold.

[0112] The first uniformity threshold refers to the preset judgment threshold used to distinguish between qualified and unqualified grades, which is usually set to 15%.

[0113] In this embodiment of the invention, when the uniformity deviation coefficient is greater than the first uniformity threshold, it is further determined whether the uniformity deviation coefficient is greater than the preset second uniformity threshold, so as to further determine whether the surface uniformity of the semiconductive layer of the cable terminal under test is in the qualified range or unqualified state. For example, when the uniformity deviation coefficient is greater than 5%, it is determined whether the uniformity deviation coefficient is greater than 15%.

[0114] It is worth mentioning that, after the uniformity deviation coefficient exceeds the first uniformity threshold, it is further compared with the second uniformity threshold, forming a two-level stepped judgment logic. This enables fine-grained grading of the surface uniformity of the semiconductive layer at the cable terminal, avoiding the problem of overly coarse single threshold division. Simultaneously, the progressive judgment method can clearly distinguish between moderate and severe deviations, retaining a reasonable tolerance range within the acceptable range while accurately filtering out samples with severely excessive uniformity, highly matching the actual grading requirements of production quality inspection and factory acceptance.

[0115] S33. When the uniformity deviation coefficient is greater than the second uniformity threshold, the surface uniformity failure is determined as the surface uniformity evaluation result corresponding to the cable terminal sample under test.

[0116] In this embodiment of the invention, when the uniformity deviation coefficient is greater than the second uniformity threshold, it indicates that the surface uniformity of the semiconductive layer of the cable terminal under test exceeds the allowable deviation range and does not meet the usage requirements. Therefore, the surface uniformity is determined to be unqualified as the corresponding surface uniformity evaluation result. For example, when the uniformity deviation coefficient is greater than 15%, the surface uniformity is determined to be unqualified as the corresponding surface uniformity evaluation result.

[0117] It is worth mentioning that when the surface uniformity assessment result of the cable terminal sample under test is unqualified, the sample is marked as unqualified and isolated. At the same time, the test frequency data, equivalent uniformity coefficient, uniformity deviation coefficient and test time are recorded to form a complete test file. Subsequently, the unqualified sample is retested to eliminate non-sample factors such as test equipment, environmental interference and operational errors. If the retest result is still unqualified, the sample is dissected and analyzed to determine the specific defect types and locations, such as semiconductive layer thickness deviation, surface roughness, material inhomogeneity or poor interface bonding. The analysis results are fed back to the production or installation stage, and the process parameters, processing accuracy or installation specifications are adjusted accordingly. The same batch of products is sampled and retested to prevent unqualified products from entering the field for use, thereby ensuring the overall electrical performance and operational reliability of the cable terminal.

[0118] S34. When the uniformity deviation coefficient is less than or equal to the second uniformity threshold, the surface uniformity is determined to be qualified as the surface uniformity evaluation result corresponding to the cable terminal sample under test.

[0119] In this embodiment of the invention, when the uniformity deviation coefficient is less than or equal to the second uniformity threshold, it indicates that the surface uniformity of the semiconductive layer of the cable terminal under test is within the allowable deviation range and meets the engineering use standards. The surface uniformity is then determined as the corresponding surface uniformity evaluation result. For example, when 5% < uniformity deviation coefficient... If the surface uniformity is 15%, then the surface uniformity is considered acceptable as the corresponding surface uniformity evaluation result.

[0120] It should be noted that by using a grading system based on the uniformity deviation coefficient and the first and second uniformity thresholds, a refined and standardized classification of the surface uniformity of the semiconductive layer at cable terminals can be achieved. The evaluation results are clearly distinguished into three levels: excellent, qualified, and unqualified. This not only provides a clear judgment logic and ease of execution but also avoids the coarseness of a single threshold judgment. The dual-threshold tiered judgment method can accurately distinguish different degrees of uniformity deviation, meeting the needs of high-precision quality control and adapting to the practical application of rapid screening in engineering sites, effectively improving the objectivity and practicality of the evaluation results.

[0121] In this embodiment of the invention, multiple detection frequency data of the cable terminal sample under test are acquired based on a preset detection frequency. Phase delay estimation is performed on each detection frequency data based on a preset semiconductive layer thickness to obtain multiple phase factors. Uniformity mapping is then performed on each phase factor and each detection frequency data to obtain the corresponding equivalent uniformity coefficient. Surface uniformity is evaluated on the equivalent uniformity coefficient based on a pre-obtained standard uniformity coefficient to obtain the corresponding surface uniformity evaluation result. This overcomes the technical problem that existing methods for detecting the surface uniformity of the semiconductive layer in cable terminals often rely on tools such as micrometers for single-point thickness measurement, making it difficult to achieve full-area uniformity evaluation and reducing the reliability of cable terminal operation. Compared with traditional uniformity detection methods, this invention achieves a comprehensive, quantitative, and non-destructive assessment of the surface uniformity of the semiconductive layer by acquiring data at multiple detection frequencies, estimating phase delay, and calculating uniformity mapping. This effectively solves the problem that traditional single-point thickness measurement cannot reflect overall uniformity. Furthermore, by using the equivalent uniformity coefficient and the standard uniformity coefficient as quantitative criteria for surface uniformity assessment, it can sensitively identify key defects affecting the electric field distribution, such as thickness deviation, excessive surface roughness, material inhomogeneity, and poor interface bonding. This allows for early avoidance of partial discharge and insulation breakdown risks, thereby improving the reliability of cable terminal operation.

[0122] Please see Figure 3 , Figure 3 This is a structural block diagram of a cable terminal semiconductive layer surface uniformity detection system provided in Embodiment 3 of the present invention.

[0123] This invention provides a cable termination semiconductive layer surface uniformity detection system, comprising: The acquisition module 301 is used to acquire multiple detection frequency data of the cable terminal sample under test based on a preset detection frequency, and to perform phase delay estimation on each detection frequency data based on a preset semiconductive layer thickness to obtain multiple phase factors. The uniformity evaluation module 302 is used to perform uniformity mapping based on each phase factor and each detection frequency data to obtain the corresponding equivalent uniformity coefficient. The detection module 303 is used to evaluate the surface uniformity of the cable terminal sample under test based on the pre-acquired standard uniformity coefficient and the equivalent uniformity coefficient, and obtain the corresponding surface uniformity evaluation result.

[0124] Furthermore, the acquisition module 301 includes: The angular frequency submodule is used to multiply the preset pi constant with the frequency of each detected frequency data to obtain multiple angular frequencies. The wavenumber submodule is used to process the ratio of each angular frequency to a preset speed of light to obtain multiple wavenumbers. The first multiplication submodule is used to multiply each wavenumber with a preset semiconducting layer thickness to obtain multiple phase factors.

[0125] Furthermore, the detection frequency data includes the transmission coefficient amplitude and transmission coefficient phase, and the uniformity evaluation module 302 includes: The first difference submodule is used to perform difference processing on the preset first reference value and each transmission coefficient amplitude to obtain multiple first differences; The first summation submodule is used to sum the first reference value with each transmission coefficient amplitude to obtain multiple first summations. The first ratio submodule is used to perform ratio processing on each first sum value and the corresponding first difference value to obtain multiple first ratio values; The second ratio submodule is used to perform ratio processing on each first ratio and the corresponding phase factor to obtain multiple second ratios; The first multiplication submodule is used to multiply each second ratio with the cosine value of the corresponding transmission coefficient phase to obtain multiple first multiplication values. The first mean submodule is used to average the squared values ​​of each first multiplier to obtain the corresponding equivalent uniformity coefficient.

[0126] Furthermore, the detection module 303 includes: The second difference submodule performs difference processing on the equivalent uniformity coefficient and the pre-acquired standard uniformity coefficient to obtain the corresponding uniformity deviation value. The third ratio submodule processes the ratio of the uniformity deviation value to the standard uniformity coefficient to obtain the corresponding third ratio, and determines the absolute value of the third ratio as the uniformity deviation coefficient. The evaluation submodule is used to determine the surface uniformity evaluation result of the cable terminal sample under test based on the uniformity deviation coefficient.

[0127] Furthermore, the evaluation submodule includes: The first evaluation unit is used to determine the surface uniformity as excellent when the uniformity deviation coefficient is less than or equal to the preset first uniformity threshold. The second evaluation unit is used to determine whether the uniformity deviation coefficient is greater than the preset second uniformity threshold when the uniformity deviation coefficient is greater than the first uniformity threshold. When the uniformity deviation coefficient is greater than the second uniformity threshold, the surface uniformity failure is determined as the surface uniformity evaluation result of the cable terminal sample under test. When the uniformity deviation coefficient is less than or equal to the second uniformity threshold, the surface uniformity is determined to be qualified as the surface uniformity evaluation result corresponding to the cable terminal sample under test.

[0128] Furthermore, the process of obtaining the standard uniformity coefficient is as follows: Multiple standard testing frequency data of standard cable terminal samples are obtained based on the testing frequency; Phase delay estimation and uniformity evaluation are performed on the data of each standard detection frequency to obtain the corresponding standard uniformity coefficient.

[0129] Please see Figure 4 , Figure 4 This is a structural block diagram of an electronic device provided in Embodiment 4 of the present invention.

[0130] An electronic device according to an embodiment of the present invention includes: a memory 401 and a processor 402. The memory 401 stores a computer program. When the computer program is executed by the processor 402, the processor 402 performs the cable terminal semiconductive layer surface uniformity detection method as described in any of the above embodiments.

[0131] Memory 401 may be an electronic memory such as flash memory, EEPROM (Electrically Erasable Programmable Read-Only Memory), EPROM, hard disk, or ROM. Memory 401 has storage space 403 for program code 413 for performing any of the method steps described above. For example, storage space 403 for program code may include individual program codes 413 for implementing the various steps in the methods described above. This program code may be read from or written to one or more computer program products. These computer program products include program code carriers such as hard disks, CDs, memory cards, or floppy disks. The program code may be compressed, for example, in a suitable form. When run by a computing processing device, this code causes the computing processing device to perform the various steps in the methods described above. This program code may be read from or written to one or more computer program products. These computer program products include program code carriers such as hard disks, CDs, memory cards, or floppy disks. The program code may be compressed, for example, in a suitable form. When this code is run by a computing device, it causes the computing device to perform the various steps in the cable termination semiconductive layer surface uniformity detection method described above.

[0132] Embodiment 5 of the present invention also provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the cable terminal semiconductive layer surface uniformity detection method as described in any of the above embodiments.

[0133] Embodiment 6 of the present invention also provides a computer program product, which includes a computer program stored on a non-transitory computer-readable storage medium. The computer program includes program instructions, wherein when the program instructions are executed by a computer, the computer performs the cable terminal semiconductive layer surface uniformity detection method as described in any of the above embodiments.

[0134] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working processes of the systems, devices, and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here.

[0135] In the several embodiments provided in this application, it should be understood that the disclosed systems, apparatuses, and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces, or indirect coupling or communication connection between apparatuses or units, and may be electrical, mechanical, or other forms.

[0136] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0137] Furthermore, the functional units in the various embodiments of the present invention can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0138] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods of the various embodiments of the present invention. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0139] The above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for detecting the surface uniformity of the semiconductive layer in a cable terminal, characterized in that, include: Multiple detection frequency data of the cable terminal sample under test are obtained based on a preset detection frequency. The phase delay of each detection frequency data is estimated based on a preset semiconductive layer thickness to obtain multiple phase factors. Based on the uniformity mapping of each phase factor and each detection frequency data, the corresponding equivalent uniformity coefficient is obtained; Based on the pre-obtained standard uniformity coefficient, the surface uniformity of the cable terminal sample under test is evaluated according to the equivalent uniformity coefficient, and the corresponding surface uniformity evaluation result is obtained.

2. The method for detecting the surface uniformity of the semiconductive layer at a cable termination according to claim 1, characterized in that, The step of estimating the phase delay of each detection frequency data based on a preset semiconductive layer thickness to obtain multiple phase factors includes: The preset constant of pi is multiplied by the frequency of each of the detected frequency data to obtain multiple angular frequencies; Each of the angular frequencies is compared with a preset speed of light to obtain multiple wavenumbers; Each wavenumber is multiplied by a preset semiconducting layer thickness to obtain multiple phase factors.

3. The method for detecting the surface uniformity of the semiconductive layer at a cable termination according to claim 1, characterized in that, The detection frequency data includes the transmission coefficient amplitude and the transmission coefficient phase. The step of performing uniformity mapping based on each phase factor and each detection frequency data to obtain the corresponding equivalent uniformity coefficient includes: The preset first reference value and each of the transmission coefficient amplitudes are respectively processed by difference to obtain multiple first differences; The first reference value is summed with each of the transmission coefficient amplitudes to obtain multiple first sum values; Each of the first sums is compared with its corresponding first difference to obtain multiple first ratios. Each of the first ratios is compared with the corresponding phase factor to obtain multiple second ratios; Each of the second ratios is multiplied by the cosine of the corresponding transmission coefficient phase to obtain multiple first multiplication values; The squares of each of the first multipliers are averaged to obtain the corresponding equivalent uniformity coefficients.

4. The method for detecting the surface uniformity of the semiconductive layer of a cable terminal according to claim 1, characterized in that, The step of evaluating the surface uniformity of the cable terminal sample under test based on the pre-acquired standard uniformity coefficient and the equivalent uniformity coefficient to obtain the corresponding surface uniformity evaluation result includes: The equivalent uniformity coefficient is compared with the pre-obtained standard uniformity coefficient to obtain the corresponding uniformity deviation value. The uniformity deviation value is compared with the standard uniformity coefficient to obtain the corresponding third ratio, and the absolute value of the third ratio is determined as the uniformity deviation coefficient. The surface uniformity evaluation result corresponding to the cable terminal sample under test is determined based on the uniformity deviation coefficient.

5. The method for detecting the surface uniformity of the semiconductive layer of a cable terminal according to claim 4, characterized in that, The step of determining the surface uniformity evaluation result corresponding to the cable terminal sample under test based on the uniformity deviation coefficient includes: When the uniformity deviation coefficient is less than or equal to the preset first uniformity threshold, the surface uniformity is determined to be excellent as the surface uniformity evaluation result corresponding to the cable terminal sample under test. When the uniformity deviation coefficient is greater than the first uniformity threshold, it is determined whether the uniformity deviation coefficient is greater than the preset second uniformity threshold. When the uniformity deviation coefficient is greater than the second uniformity threshold, the surface uniformity failure is determined as the surface uniformity evaluation result corresponding to the cable terminal sample under test. When the uniformity deviation coefficient is less than or equal to the second uniformity threshold, the surface uniformity is determined to be qualified as the surface uniformity evaluation result corresponding to the cable terminal sample under test.

6. The method for detecting the surface uniformity of the semiconductive layer of a cable terminal according to claim 1, characterized in that, The process of obtaining the standard uniformity coefficient is as follows: Based on the detection frequency, obtain multiple standard detection frequency data for standard cable terminal samples; Phase delay estimation and uniformity evaluation are performed on each of the standard detection frequency data to obtain the corresponding standard uniformity coefficient.

7. A system for detecting the surface uniformity of the semiconductive layer of a cable termination, characterized in that, include: The acquisition module is used to acquire multiple detection frequency data of the cable terminal sample under test based on a preset detection frequency, and to perform phase delay estimation on each of the detection frequency data based on a preset semiconductive layer thickness to obtain multiple phase factors. The uniformity evaluation module is used to perform uniformity mapping based on each of the phase factors and each of the detection frequency data to obtain the corresponding equivalent uniformity coefficient. The detection module is used to evaluate the surface uniformity of the cable terminal sample under test based on the pre-acquired standard uniformity coefficient and the equivalent uniformity coefficient, and obtain the corresponding surface uniformity evaluation result.

8. An electronic device, characterized in that, The device includes a memory and a processor, wherein the memory stores a computer program, and when the computer program is executed by the processor, the processor performs the steps of the method for detecting the surface uniformity of the semiconductive layer of a cable terminal as described in any one of claims 1-6.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed, it implements the method for detecting the surface uniformity of the semiconductive layer of a cable terminal as described in any one of claims 1-6.

10. A computer program product, characterized in that, The computer program product includes a computer program stored on a non-transitory computer-readable storage medium, the computer program including program instructions, wherein when the program instructions are executed by a computer, the computer performs the cable termination semiconducting layer surface uniformity detection method as described in any one of claims 1-6.

Images