Wafer inspection method and inspection apparatus

Abstract

This invention provides a wafer inspection method and apparatus, relating to the field of wafer inspection technology. In this invention, after the target wafer is released by a suction cup, a lifting mechanism is controlled to lift the target wafer to a preset position. Then, a light source is activated, illuminating the target wafer and forming an actual light spot image. Simultaneously, a sensing mechanism is activated to generate sensing information. The actual light spot image is then compared with a preset light spot image to generate comparison information. Finally, based on the comparison information and the sensing information, it is determined whether the target wafer is tilted. This technical solution improves the accuracy of the inspection results by collaboratively determining whether the target wafer is tilted based on comparison information and sensing information, thereby avoiding damage to the target wafer.

Description

Technical Field

[0001] This invention relates to the field of wafer inspection technology, and in particular to a wafer inspection method and inspection device. Background Technology

[0002] In semiconductor manufacturing, wafers are typically held in place on a stage within a reaction chamber using electrostatic chucks for etching. Under normal process conditions, the charge on the back side of the wafer is fully released after being released from the chuck. However, when special films, such as oxide films or electrostatic films, are present on the back side of the wafer, these films can hinder charge release, leaving residual charge on the back side after release. When the lifting mechanism then lifts the wafer, the residual electrostatic force on the back side interacts with the lifting force, causing the wafer to be deflected. This can scratch the wafer when the robotic arm reaches into the reaction chamber to retrieve it, reducing wafer yield or even causing serious wafer breakage.

[0003] To address the above issues, existing solutions, such as optimizing the wafer release time from the chuck, have not yielded significant improvements. Alternatively, existing technologies employ monitoring components to monitor the wafer's posture in real time after it is lifted, but relying on a single monitoring component to determine whether the lifted wafer has tilted introduces errors. Summary of the Invention

[0004] One objective of the first aspect of this invention is to provide a wafer inspection method that solves the technical problem of insufficient accuracy in judging the tilt of a wafer after it has been lifted in the prior art.

[0005] Another objective of this invention is to improve the reliability of tilt detection when performing tilt determination on a raised wafer.

[0006] A second aspect of the present invention aims to provide a wafer inspection device.

[0007] According to a first aspect of the present invention, the present invention provides a method for inspecting a wafer, comprising the following steps: After the target wafer is released by the suction cup, the lifting mechanism is controlled to lift the target wafer to the preset position; The system controls the light source to turn on, so that light shines on the target wafer and forms an actual light spot image, and controls the sensing mechanism to turn on and generate sensing information. The actual light spot image and the preset light spot image are compared, and comparison information is generated; the preset light spot image corresponds to the preset position. Based on the comparison information and the sensing information, it is determined whether the target wafer has tilted.

[0008] Optionally, the step of determining whether the target wafer is tilted based on the comparison information and the sensing information specifically includes the following steps: When the comparison information indicates that the overlap area between the actual spot image and the preset spot image is less than a preset value, and the sensing information indicates that the target wafer is not in a horizontal state, it is determined that the target wafer is tilted.

[0009] Optionally, the step of determining whether the target wafer is tilted based on the comparison information and the sensing information further includes the following steps: When the comparison information indicates that the overlap area between the actual spot image and the preset spot image is greater than or equal to the preset value, and the sensing information indicates that the target wafer is in a horizontal state, it is determined that the wafer has not tilted.

[0010] Optionally, the step of determining whether the target wafer is tilted based on the comparison information and the sensing information further includes the following steps: The comparison information indicates that the overlap area between the actual spot image and the preset spot image is greater than or equal to the preset value, and the sensing information indicates that the target wafer is not in a horizontal state when an alarm signal is generated. An alarm signal is generated when the overlap area between the actual spot image and the preset spot image is less than the preset value, and the sensing information indicates that the target wafer is in a horizontal state.

[0011] Optionally, the sensing mechanism includes at least one pair of sensor components, each pair of sensor components including a first sensor and a second sensor, the first sensor and the second sensor being installed at the same height and below the preset position, the first sensor and the second sensor being located on opposite sides of the target wafer; When the second sensor receives a signal emitted by the first sensor, the sensing information indicates that the target wafer is in a horizontal state; when the second sensor does not receive a signal emitted by the first sensor, the sensing information indicates that the target wafer is not in a horizontal state.

[0012] Optionally, the number of sensor assemblies is multiple sets, and the first sensor and the second sensor of the multiple sets of sensor assemblies are arranged at circumferential intervals along the target wafer; The sensing information indicates that the target wafer is in a horizontal state when all the second sensors receive the corresponding signal emitted by the first sensor; the sensing information indicates that the target wafer is not in a horizontal state when any of the second sensors does not receive the corresponding signal emitted by the first sensor.

[0013] According to a second aspect of the present invention, the present invention also provides a wafer inspection apparatus, comprising: The control module includes a memory and a processor. The memory stores a calculation program, which, when executed by the processor, is used to implement the detection method described above.

[0014] Optional, also includes: A lifting mechanism is connected to the control module and is configured to move vertically under the control of the control module, thereby lifting the target wafer to a preset position; A light source is positioned above the target wafer and connected to the control module. The light source is configured to be turned on under the control of the control module to illuminate the target wafer and form an actual light spot image. A sensing mechanism is installed on the periphery of the target wafer and connected to the control module. The sensing mechanism is configured to be turned on under the control of the control module and generate sensing information.

[0015] Optionally, the sensing mechanism includes at least one pair of sensor components, each pair of sensor components including a first sensor and a second sensor, the first sensor and the second sensor being installed at the same height and below the preset position, the first sensor and the second sensor being located on opposite sides of the target wafer.

[0016] Optionally, it also includes: A suction cup, connected to the control module, adsorbs or releases the target wafer under the control of the control module; An image acquisition device is connected to the control module and is used to acquire the actual light spot image and transmit the actual light spot image to the control module; The cavity has a portion of its sidewalls forming a transparent area. The light source, the suction cup, and part of the lifting mechanism are installed inside the cavity. The sensing mechanism is installed outside the cavity and located in the transparent area.

[0017] According to this invention, after the target wafer is released by the suction cup, the lifting mechanism is controlled to lift the target wafer to a first predetermined position. Then, the light source is turned on, causing light to illuminate the target wafer and form an actual light spot image. Simultaneously, the sensing mechanism is activated to generate sensing information. Then, the real-time acquired actual light spot image is compared with a preset light spot image to generate comparison information. Finally, a comprehensive judgment is made by combining the sensor information and the comparison information, cross-verifying the target wafer's orientation from both optical detection and sensing information dimensions. This provides dual assurance for determining whether the target wafer is tilted, improving the accuracy and reliability of the judgment result.

[0018] Furthermore, by arranging multiple sensor assemblies at circumferential intervals along the target wafer, the detection coverage of the target wafer is significantly expanded, and the reliability of the detection results is improved. Simultaneously, it can sensitively detect minute tilts or asymmetric deformations occurring in any local area of ​​the target wafer, effectively avoiding blind spots and missed detection risks that may exist in single-point detection.

[0019] Furthermore, the wafer inspection device of this invention includes a lifting mechanism, a light source, and a sensing mechanism. Light emitted from the light source illuminates the wafer to form an actual light spot image, and the sensing mechanism is arranged around the periphery of the wafer to generate sensing information. This inspection device can determine in real time and accurately whether the wafer is tilted.

[0020] The above and other objects, advantages and features of the present invention will become more apparent to those skilled in the art from the following detailed description of specific embodiments of the invention in conjunction with the accompanying drawings. Attached Figure Description

[0021] The following sections will describe some specific embodiments of the invention in detail by way of example and not limitation, with reference to the accompanying drawings. The same reference numerals in the drawings denote the same or similar parts or portions. Those skilled in the art should understand that these drawings are not necessarily drawn to scale. In the drawings: Figure 1 This is a schematic structural diagram of a wafer inspection device according to an embodiment of the present invention; Figure 2 This is a schematic flowchart of a wafer inspection method according to an embodiment of the present invention; Figure 3 This is a schematic flowchart of a wafer inspection method according to another embodiment of the present invention.

[0022] Figure label: 100-Detection device, 200-Target wafer, 1-Suction cup, 2-Lifting mechanism, 21-Driver, 22-Ejector pin, 3-Light source, 4-Sensing mechanism, 41-Sensor assembly, 411-First sensor, 412-Second sensor, 5-Cavity. Detailed Implementation

[0023] Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the present invention, and should not be construed as limiting the present invention.

[0024] In the description of this invention, it should be understood that the terms "upper" and "lower" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limiting this invention.

[0025] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature, that is, include one or more of that feature. In the description of this invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified. When a feature "includes or contains" one or more of the features it encompasses, unless otherwise specifically stated, this indicates that other features are not excluded and may be further included.

[0026] Unless otherwise expressly specified and limited, the terms "connection," "installation," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art should be able to understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0027] Unless otherwise specified, all terms (including technical and scientific terms) used in the description of this embodiment have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains.

[0028] Figure 1 This is a schematic structural diagram of a wafer inspection device according to an embodiment of the present invention.

[0029] In a specific embodiment, such as Figure 1 As shown, the wafer inspection apparatus 100 includes a control module. Specifically, the control module enables automated processing, improving the convenience of the inspection apparatus 100.

[0030] In some embodiments, the wafer inspection device 100 further includes a lifting mechanism 2, a light source 3, and a sensing mechanism 4. The lifting mechanism 2 is connected to a control module and configured to move vertically under the control of the control module, thereby lifting the target wafer 200 to a preset position. The light source 3 is disposed above the target wafer 200 and connected to the control module. The light source 3 is configured to be turned on under the control of the control module to illuminate the target wafer 200 and form an actual light spot image. The sensing mechanism 4 is mounted on the periphery of the target wafer 200 and connected to the control module. The sensing mechanism 4 is configured to be turned on under the control of the control module and generate sensing information. In this embodiment, the lifting mechanism 2 includes a driving member 21 and a plurality of ejector pins 22. The driving member 21 drives the plurality of ejector pins 22 to move vertically under the control of the control module, thereby lifting the target wafer 200 to the preset position.

[0031] In some embodiments, the sensing mechanism 4 includes at least one pair of sensor components 41. Each pair of sensor components 41 includes a first sensor 411 and a second sensor 412. The first sensor 411 and the second sensor 412 are mounted at the same height and below a preset position. The first sensor 411 and the second sensor 412 are located on opposite sides of the target wafer 200. In this embodiment, the sensing mechanism 4 is used to generate sensing information and achieves highly sensitive and reliable determination of whether the target wafer 200 is tilted.

[0032] In some embodiments, the wafer inspection device 100 further includes a suction cup 1, an image acquisition unit, and a cavity 5. The suction cup 1 is connected to a control module and, under the control of the control module, adsorbs or releases the target wafer 200. The image acquisition unit is connected to the control module and is used to acquire actual spot images and transmit the actual spot images to the control module. A portion of the sidewall of the cavity 5 forms a transparent area. The light source 3, the suction cup 1, and a portion of the lifting mechanism 2 are installed inside the cavity 5, and the sensing mechanism 4 is installed outside the cavity 5, located in the transparent area. In this embodiment, the drive member 21 of the lifting mechanism 2 is located outside the cavity 5, and the ejector pin 22 is connected to the drive member 21 and penetrates the suction cup 1. Placing the sensing mechanism 4 outside the cavity 5 protects it from the direct effects of plasma, high temperature, or corrosive gases inside the cavity, thereby significantly improving the long-term stability and service life of the sensing mechanism 4. In addition, installing the sensing mechanism 4 outside the cavity 5 facilitates maintenance and calibration, allowing operation without opening the cavity 5. In order for the second sensor 412 to receive the signal emitted by the corresponding first sensor 411, the material of the transparent area of ​​the cavity 5 is quartz. Quartz material has excellent light transmittance and chemical stability, which allows the signal of the sensing mechanism 4 to efficiently penetrate the cavity wall, while maintaining the sealing and cleanliness requirements of the cavity 5.

[0033] Figure 2This is a schematic flowchart of a wafer inspection method according to an embodiment of the present invention.

[0034] In some embodiments, such as Figure 2 As shown, a method for inspecting a wafer using the aforementioned inspection apparatus 100 includes the following steps: Step S100: After the target wafer 200 is released by the suction cup 1, control the lifting mechanism 2 to lift the target wafer 200 to the preset position; In step S200, the light source 3 is turned on so that the light shines on the target wafer 200 and forms an actual light spot image, and the sensing mechanism 4 is turned on and sensing information is generated. Step S300: Compare the actual light spot image with the preset light spot image and generate comparison information; the preset light spot image corresponds to a preset position; Step S400: Determine whether the target wafer 200 is tilted based on the comparison information and sensor information.

[0035] In this embodiment, after the target wafer 200 is released by the suction cup 1, the lifting mechanism 2 is controlled to lift the target wafer 200 to a predetermined position. Then, the light source 3 is turned on, so that light shines on the target wafer 200 and forms an actual light spot image. Simultaneously, the sensing mechanism 4 is turned on and generates sensing information. Then, the real-time acquired actual light spot image is compared with a preset light spot image to generate comparison information. Finally, a comprehensive judgment is made by combining the sensor information and the comparison information. The attitude of the target wafer 200 is cross-verified from two dimensions: optical detection and sensing information. This provides dual assurance for determining whether the target wafer 200 is tilted, improving the accuracy and reliability of the judgment result.

[0036] In existing technologies, one method for detecting a target wafer 200 relies on multiple sets of monitoring sensors discretely arranged around the periphery of the target wafer. These sensors are through-beam sensors, meaning they determine whether the target wafer 200 is tilted by controlling the continuity of the physical optical path. However, the layout of these sensors has a fixed vertical spacing, such as 3mm-5mm, which cannot detect slight tilts of the target wafer 200 smaller than this spacing, resulting in a detection blind zone. In contrast, this invention combines sensor information and comparative information for a comprehensive judgment, enabling accurate determination of whether the target wafer 200 has tilted after being lifted to a preset position, effectively avoiding the risk of scratches on the target wafer 200 due to misjudgment.

[0037] In step S100, the preset position refers to the target lifting height that the target wafer 200 should theoretically reach, as set by the process. However, due to residual charges or film adsorption interference factors on the back side of the target wafer 200, after the lifting mechanism 2 performs the lifting action in a controlled manner, although the target wafer 200 reaches the preset position in height, its actual posture cannot be guaranteed to be in an ideal horizontal state. That is, the target wafer 200 may have tilted, shifted, or locally warped.

[0038] In step S300, the real-time acquired actual spot image is compared with a pre-stored preset spot image with high precision, and quantified comparison information is generated. The preset spot image refers to the spot image formed when the target wafer 200 is lifted to a preset position and is in a horizontal state. In actual detection, if the target wafer 200 tilts or shifts, the actual spot image will show deformation, displacement, or abnormal intensity distribution. The generated comparison information can objectively and quantitatively characterize the optical deviation between the current orientation and horizontal state of the target wafer 200, providing key optical basis for subsequent comprehensive judgment based on sensor information.

[0039] In some embodiments, step S400 specifically includes the following steps: In step S410, when the overlap area between the actual spot image and the preset spot image is less than a preset value and the target wafer 200 is not in a horizontal state according to the sensing information, it is determined that the target wafer 200 is tilted.

[0040] In step S410, both the comparison information and the sensing information indicate that an alarm signal is generated when the target wafer 200 is not in a horizontal state. Additionally, the comparison information can also characterize the spot center offset, shape distortion degree, or grayscale distribution deviation of the actual spot image relative to a preset spot image. By collaboratively analyzing the quantitative indicators of these three dimensions—spot center offset, shape distortion degree, and grayscale distribution deviation—a comprehensive determination is made as to whether the target wafer 200 is tilted, significantly enhancing the accuracy of tilt detection.

[0041] In some embodiments, step S400 further includes the following steps: In step S420, when the overlap area between the comparison information characterizing the actual spot image and the preset spot image is greater than or equal to a preset value, and the sensing information characterizing the target wafer 200 is in a horizontal state, it is determined that the wafer has not tilted.

[0042] In step S420, if the overlap area between the actual spot image and the preset spot image, as indicated by the comparison information, is greater than or equal to a preset value, it indicates that the optical projection shape of the target wafer 200 highly matches the ideal horizontal state, and no significant positional shift or shape distortion occurs. The synchronously acquired sensor information, after analysis, confirms that the target wafer 200 is in a horizontal state. This determination mechanism establishes a highly reliable horizontal state identification standard through dual confirmation of optical shape matching and physical posture verification. Only by simultaneously passing the qualification checks of the comparison information and sensor information can it be confirmed that the target wafer 200 has not tilted, thus safely proceeding to the next process step. This effectively avoids the situation where a horizontal target wafer 200 is misjudged as abnormal due to optical reflection interference or occasional noise from the sensing mechanism 4.

[0043] Figure 3 This is a schematic flowchart of a wafer inspection method according to another embodiment of the present invention. In some embodiments, such as Figure 3 As shown, step S400 further includes the following steps: Step S430: When the overlap area between the actual spot image and the preset spot image is greater than or equal to a preset value, and the target wafer 200 is not in a horizontal state, an alarm signal is generated. Step S440: When the overlap area between the actual spot image and the preset spot image is less than a preset value, and the target wafer 200 is in a horizontal state, an alarm signal is generated.

[0044] In step S430, when it is determined from the comparison information that the target wafer 200 is not tilted, and when it is determined from the sensor information that the target wafer 200 is tilted, an alarm signal is generated. Personnel can immediately take standardized response procedures based on the alarm signal.

[0045] In step S440, when it is determined from the comparison information that the target wafer 200 is tilted, and when it is determined from the sensor information that the target wafer 200 is not tilted, an alarm signal is generated. Personnel can immediately take standardized response steps based on the alarm signal.

[0046] In some embodiments, the sensing mechanism 4 includes at least one pair of sensor components 41. Each pair of sensor components 41 includes a first sensor 411 and a second sensor 412. The first sensor 411 and the second sensor 412 are mounted at the same height and below a preset position. The first sensor 411 and the second sensor 412 are located on opposite sides of the target wafer 200. When the second sensor 412 receives a signal emitted by the first sensor 411, the sensing information indicates that the target wafer 200 is in a horizontal state. When the second sensor 412 does not receive a signal emitted by the first sensor 411, the sensing information indicates that the target wafer 200 is not in a horizontal state.

[0047] In this embodiment, when the target wafer 200 is lifted to a preset position, if it is not tilted, the lower surface of the target wafer 200 will be higher than the mounting height of the sensor assembly 41. If the target wafer 200 is tilted, the lower edge or lower surface of the target wafer 200 will droop below the mounting height of the sensor assembly 41, forming a physical obstruction. This causes the second sensor 412 to be unable to receive the signal emitted by the first sensor 411, meaning the sensing information indicates that the target wafer 200 is not in a horizontal state. High-reliability horizontal judgment is achieved through simple on / off logic, resulting in a concise structure and rapid response.

[0048] In some embodiments, the number of sensor components 41 is multiple sets, with first sensors 411 and second sensors 412 arranged circumferentially spaced along the target wafer 200. When all second sensors 412 receive signals emitted by the corresponding first sensors 411, the sensing information indicates that the target wafer 200 is in a horizontal state. When any second sensor 412 does not receive a signal emitted by the corresponding first sensor 411, the sensing information indicates that the target wafer 200 is not in a horizontal state. In this step, the first sensors 411 and second sensors 412 of the multiple sets of sensor components 41 are arranged circumferentially spaced along the target wafer 200, and the mounting heights of the multiple sets of sensor components 41 are different. This design significantly improves the coverage and reliability of the sensing mechanism 4. Even if the target wafer 200 only experiences localized slight warping or asymmetrical tilting, it can be effectively captured by at least one set of sensor components 41, thereby avoiding missed detections due to single-point detection blind spots.

[0049] The control module includes a memory and a processor. The memory stores the calculation program, which is executed by the processor to implement the aforementioned detection method. The processor can be a central processing unit (CPU), a digital processing unit, etc. The processor sends and receives data through a communication interface. The memory stores the program executed by the processor. Memory is any medium capable of carrying or storing desired program code in the form of instructions or data structures, and accessible by a computer; it can also be a combination of multiple memories. The aforementioned calculation program can be downloaded from a computer-readable storage medium to the corresponding computing / processing device or via a network (e.g., the Internet, local area network, wide area network, and / or wireless network) to a computer or external storage device.

[0050] For the purposes of this description, a "computer-readable medium" can be any means that can contain, store, communicate, propagate, or transmit a program for use by or in conjunction with an instruction execution system, apparatus, or device. More specific examples of computer-readable media (a non-exhaustive list) include: an electrical connection (electronic device) having one or more wires, a portable computer disk drive (magnetic device), random access memory (RAM), read-only memory (ROM), erasable and editable read-only memory (EPROM or flash memory), fiber optic devices, and portable optical disc read-only memory (CDROM). Furthermore, a computer-readable medium can even be paper or other suitable media on which the program can be printed, since the program can be obtained electronically, for example, by optically scanning the paper or other medium, followed by editing, interpreting, or otherwise processing as necessary, and then stored in a computer memory.

[0051] The following detailed description uses specific embodiments and comparative examples.

[0052] Example 1: This embodiment provides a wafer inspection method, which includes: Step S111: After the target wafer 200 is released by the suction cup 1, the control module controls the lifting mechanism 2 to lift the target wafer 200 to the preset position; In step S121, the control module controls the light source 3 to turn on, so that the light shines on the target wafer 200 and forms an actual light spot image, and controls the sensing mechanism 4 to turn on and generate sensing information; wherein the sensing mechanism 4 includes ten pairs of sensor components 41, which are arranged at intervals along the circumference of the target wafer 200. Step S131: Compare the actual spot image with the preset spot image and generate comparison information; Step S141: When the control module determines that the target wafer 200 is tilted based on the comparison information and / or sensor information, it generates an alarm signal. In step S142, the control module determines that the target wafer 200 has not tilted based on the comparison information and sensor signals.

[0053] Comparative Example 1: The difference between this comparative example and Example 1 is that the sensing mechanism 4 is not controlled to open, and no sensing information is generated. The target wafer 200 is only judged based on the comparison information to determine whether it has tilted.

[0054] Comparative Example 2: The difference between this comparative example and Example 1 is that the light source 3 is not turned on, no comparison information is generated, and the target wafer 200 is determined based solely on the sensor information to determine whether it is tilted.

[0055] Table 1 below shows the overall performance comparison results of the examples and comparative examples in determining whether the target wafer is tilted.

[0056] As shown in Table 1, the tilt detection accuracy of Example 1 is 98%, significantly higher than that of Comparative Example 1 and Comparative Example 2. Example 1, through the combined use of sensor information and comparison information, can effectively improve the detection accuracy by collaboratively determining whether the target wafer 200 is tilted. In contrast, Comparative Example 1 relies solely on the comparison information between the actual spot image and the preset spot image, ignoring sensor data, resulting in lower detection accuracy of only 75%. Comparative Example 2, on the other hand, relies on sensor information for judgment, achieving a detection accuracy of 85%. Overall, Example 1 demonstrates a clear advantage in detecting whether the target wafer 200 is tilted.

[0057] Therefore, those skilled in the art should recognize that although numerous exemplary embodiments of the present invention have been shown and described in detail herein, many other variations or modifications conforming to the principles of the present invention can be directly determined or derived from the disclosure of the present invention without departing from the spirit and scope of the invention. Thus, the scope of the present invention should be understood and construed as covering all such other variations or modifications.

Claims

1. A method for inspecting wafers, characterized in that, Includes the following steps: After the target wafer is released by the suction cup, the lifting mechanism is controlled to lift the target wafer to the preset position; The system controls the light source to turn on, so that light shines on the target wafer and forms an actual light spot image, and controls the sensing mechanism to turn on and generate sensing information. The actual light spot image and the preset light spot image are compared, and comparison information is generated; the preset light spot image corresponds to the preset position. Based on the comparison information and the sensing information, it is determined whether the target wafer has tilted.

2. The detection method according to claim 1, characterized in that, The step of determining whether the target wafer is tilted based on the comparison information and the sensing information specifically includes the following steps: When the comparison information indicates that the overlap area between the actual spot image and the preset spot image is less than a preset value, and the sensing information indicates that the target wafer is not in a horizontal state, it is determined that the target wafer is tilted.

3. The detection method according to claim 2, characterized in that, The step of determining whether the target wafer is tilted based on the comparison information and the sensing information further includes the following steps: When the comparison information indicates that the overlap area between the actual spot image and the preset spot image is greater than or equal to the preset value, and the sensing information indicates that the target wafer is in a horizontal state, it is determined that the wafer has not tilted.

4. The detection method according to claim 3, characterized in that, The step of determining whether the target wafer is tilted based on the comparison information and the sensing information further includes the following steps: The comparison information indicates that the overlap area between the actual spot image and the preset spot image is greater than or equal to the preset value, and the sensing information indicates that the target wafer is not in a horizontal state when an alarm signal is generated. An alarm signal is generated when the overlap area between the actual spot image and the preset spot image is less than the preset value, and the sensing information indicates that the target wafer is in a horizontal state.

5. The detection method according to any one of claims 2-4, characterized in that, The sensing mechanism includes at least one pair of sensor components, each pair of sensor components including a first sensor and a second sensor. The first sensor and the second sensor are mounted at the same height and are lower than the preset position. The first sensor and the second sensor are respectively located on both sides of the target wafer. When the second sensor receives the signal emitted by the first sensor, the sensing information indicates that the target wafer is in a horizontal state; When the second sensor does not receive a signal emitted by the first sensor, the sensing information indicates that the target wafer is not in a horizontal state.

6. The detection method according to claim 5, characterized in that, The number of sensor assemblies is multiple sets, and the first sensor and the second sensor of the multiple sets of sensor assemblies are arranged at intervals along the circumference of the target wafer; The sensing information indicates that the target wafer is in a horizontal state when all the second sensors receive signals corresponding to those emitted by the first sensors. When any of the second sensors does not receive a signal emitted by the corresponding first sensor, the sensing information indicates that the target wafer is not in a horizontal state.

7. A wafer inspection device, characterized in that, include: The control module includes a memory and a processor, wherein the memory stores a calculation program, which, when executed by the processor, is used to implement the detection method according to any one of claims 1-6.

8. The detection device according to claim 7, characterized in that, Also includes: A lifting mechanism is connected to the control module and is configured to move vertically under the control of the control module, thereby lifting the target wafer to a preset position; A light source is positioned above the target wafer and connected to the control module. The light source is configured to be turned on under the control of the control module to illuminate the target wafer and form an actual light spot image. A sensing mechanism is installed on the periphery of the target wafer and connected to the control module. The sensing mechanism is configured to be turned on under the control of the control module and generate sensing information.

9. The detection device according to claim 8, characterized in that, The sensing mechanism includes at least one pair of sensor components, each pair of sensor components including a first sensor and a second sensor. The first sensor and the second sensor are installed at the same height and are lower than the preset position. The first sensor and the second sensor are respectively located on both sides of the target wafer.

10. The detection device according to claim 9, characterized in that, Also includes: A suction cup, connected to the control module, adsorbs or releases the target wafer under the control of the control module; An image acquisition device is connected to the control module and is used to acquire the actual light spot image and transmit the actual light spot image to the control module; The cavity has a portion of its sidewalls forming a transparent area. The light source, the suction cup, and part of the lifting mechanism are installed inside the cavity. The sensing mechanism is installed outside the cavity and located in the transparent area.

Images