Optoelectronic device, method of manufacturing an optoelectronic device, and display device

Abstract

The application discloses an optoelectronic device, a preparation method of the optoelectronic device and a display device. The optoelectronic device comprises an anode, a hole functional layer, an active layer, an electron functional layer and a cathode which are sequentially stacked. The optoelectronic device further comprises a first auxiliary layer arranged between the hole functional layer and the active layer and / or a second auxiliary layer arranged between the electron functional layer and the active layer. The material of the first auxiliary layer comprises a first organic compound, the molecular weight of the first organic compound is 100-2000, and the first organic compound contains at least one silicon-nitrogen bond. The material of the second auxiliary layer comprises a second organic compound, the molecular weight of the second organic compound is 100-2000, and the second organic compound contains at least one silicon-nitrogen bond. The device life and performance stability of the optoelectronic device can be improved.

Description

Technical Field

[0001] This application relates to the field of optoelectronic technology, specifically to an optoelectronic device, a method for fabricating the optoelectronic device, and a display device. Background Technology

[0002] Optoelectronic devices refer to a class of devices made using the photoelectric effect of semiconductors, including but not limited to optoelectronic devices, solar cells, or photodetectors. Taking light-emitting devices as an example, light-emitting devices include, but are not limited to, Organic Light-Emitting Diodes (OLEDs) and Quantum Dot Light-Emitting Diodes (QLEDs). OLEDs / QLEDs have a "sandwich" structure, which includes an anode, a cathode, and a light-emitting layer. The anode and cathode are positioned opposite each other, and the light-emitting layer is positioned between the anode and cathode. The light-emitting principle of OLEDs / QLEDs is as follows: electrons are injected from the cathode of the device into the light-emitting region, and holes are injected from the anode into the light-emitting region. Electrons and holes recombine in the light-emitting region to form excitons. The recombinated excitons release photons through radiative transitions, thereby emitting light.

[0003] After years of development, optoelectronic devices have made significant progress in performance indicators and demonstrated enormous application potential. However, shortcomings still exist, such as the need for further improvement in performance stability. Therefore, how to further enhance the performance stability of optoelectronic devices is of great significance to their application and development. Summary of the Invention

[0004] In view of the shortcomings of the prior art, this application provides an optoelectronic device, a method for fabricating the optoelectronic device, and a display device.

[0005] In a first aspect, this application provides an optoelectronic device, the optoelectronic device comprising an anode, a hole functional layer, an active layer, an electron functional layer and a cathode stacked sequentially; the optoelectronic device further includes:

[0006] A first auxiliary layer is disposed between the hole functional layer and the active layer. The material of the first auxiliary layer includes a first organic compound with a molecular weight of 100-2000 and containing at least one silicon-nitrogen bond; and / or

[0007] A second auxiliary layer is disposed between the electronic functional layer and the active layer. The material of the second auxiliary layer includes a second organic compound with a molecular weight of 100 to 2000 and containing at least one silicon-nitrogen bond.

[0008] Secondly, this application provides a method for fabricating an optoelectronic device, which can be used to fabricate the optoelectronic device as described in the first aspect, comprising the following steps:

[0009] A first electrode is provided, and a plurality of functional layers are formed on one side of the first electrode; and

[0010] A second electrode is formed on the side of the plurality of functional layers away from the first electrode;

[0011] Wherein, when the first electrode is an anode and the second electrode is a cathode, the step of forming the plurality of functional layers includes: sequentially forming a hole functional layer, an active layer and an electron functional layer on one side of the first electrode; or, when the first electrode is a cathode and the second electrode is an anode, the step of forming the plurality of functional layers includes: sequentially forming an electron functional layer, an active layer and a hole functional layer on one side of the first electrode.

[0012] The method for fabricating the optoelectronic device further includes the steps of: forming a first auxiliary layer between the hole functional layer and the active layer, and / or forming a second auxiliary layer between the electronic functional layer and the active layer;

[0013] The method for preparing the first auxiliary layer includes the steps of: depositing a first organic compound to obtain the first auxiliary layer, wherein the molecular weight of the first organic compound is 100 to 2000 and the first organic compound contains at least one silicon-nitrogen bond; and / or, the method for preparing the second auxiliary layer includes the steps of: depositing a second organic compound to obtain the second auxiliary layer, wherein the molecular weight of the second organic compound is 100 to 2000 and the second organic compound contains at least one silicon-nitrogen bond.

[0014] Thirdly, this application provides a display device, the display device including a display panel, the display panel including a plurality of pixel units arranged in an array, each pixel unit independently including an optoelectronic device as described in the first aspect, or an optoelectronic device prepared by the method of preparing the optoelectronic device as described in the second aspect.

[0015] This application provides an optoelectronic device, a method for fabricating the optoelectronic device, and a display device, which have the following technical advantages:

[0016] In the optoelectronic device provided in this application, by adding a first auxiliary layer between the hole functional layer and the active layer, the phenomenon of damage to the hole functional layer due to excessive electron leakage to the hole functional layer can be effectively improved, thereby enhancing the device lifetime and performance stability of the optoelectronic device; and / or, by adding a second auxiliary layer between the electron functional layer and the active layer, the electron injection level of the optoelectronic device can be improved, which is beneficial to improving the device efficiency of the optoelectronic device; when the optoelectronic device includes both the first auxiliary layer and the second auxiliary layer, it can promote electron-hole transport balance, reduce interface defects, improve carrier injection and recombination efficiency, and further improve the device lifetime and performance stability of the optoelectronic device. Attached Figure Description

[0017] The technical solution and other beneficial effects of this application will become apparent from the following detailed description of specific embodiments in conjunction with the accompanying drawings.

[0018] Figure 1 This is a schematic diagram of the structure of the first optoelectronic device provided in the embodiments of this application.

[0019] Figure 2 This is a schematic diagram of the structure of a second type of optoelectronic device provided in an embodiment of this application.

[0020] Figure 3 This is a schematic diagram of the structure of a third type of optoelectronic device provided in an embodiment of this application.

[0021] Figure 4 This is a schematic diagram of the structure of an optoelectronic device provided as a comparative example of this application. Detailed Implementation

[0022] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0023] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those familiar to those skilled in the art. Furthermore, any methods and materials similar to or equivalent to those described herein may be applied to this invention. The preferred embodiments and materials described herein are for illustrative purposes only and do not limit the scope of this application.

[0024] It should be noted that the order of description of the following embodiments is not intended to limit the preferred order of embodiments. The various embodiments of this application may exist in a range format. It should be understood that the description in a range format is merely for convenience and simplicity and should not be construed as a rigid limitation on the scope of the invention. Therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single numerical values ​​within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. Furthermore, whenever a numerical range is indicated herein, it means including any referenced number (fraction or integer) within the indicated range.

[0025] In this application, unless otherwise stated, directional terms such as "upper" and "lower" generally refer to the upper and lower positions of the optoelectronic device in its actual use or operating state, specifically the orientation shown in the accompanying drawings; while "inner" and "outer" refer to the outline of the optoelectronic device. The terms "first," "second," "third," etc., are used merely as indications and do not impose numerical requirements or establish a sequence.

[0026] In this application, descriptions such as "layer A is formed on one side of layer B," "layer A is formed on the side of layer B away from layer C," or similar expressions can mean that layer A is directly formed on one side of layer B or on the side of layer B away from layer C, i.e., layer A and layer B are in direct contact; or they can mean that layer A is indirectly formed on one side of layer B or on the side of layer B away from layer C, i.e., other spacer structures can be formed between layer A and layer B. Similarly, "layer A is disposed on one side of layer B" or "layer A is disposed on the side of layer B away from layer C" can mean that layer A and layer B are in direct contact, or that other spacer structures are provided between layer A and layer B; "layer A is disposed between layer B and layer C" can mean that layer A and layer B are in direct contact and layer A and layer C are in direct contact, or layer A and layer B are in direct contact and one or more spacer structures are provided between layer A and layer C, or layer A and layer B are provided and one or more spacer structures are provided between layer A and layer C, or layer A and layer B are provided and layer A and layer C are in direct contact.

[0027] The term "including" means "including but not limited to". The term "and / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, or B alone. A and B can be singular or plural. The term "at least one" means one or more, and "more than one" means two or more. The terms "at least one", "at least one of the following", or similar expressions refer to any combination of these items, including any combination of a single or plural type. For example, "at least one of a, b, or c" or "at least one of a, b, and c" can be expressed as: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can each be a single or multiple type.

[0028] The term "average particle size" refers to the area-average particle size of a particle swarm. Area-average particle size is calculated by dividing the total volume of the particle swarm by its total area, which is the reciprocal of the surface area per unit volume. If an imaginary swarm of particles with uniform size is used to replace the original swarm, and the total volume and area of ​​this imaginary swarm are identical to the original swarm, then the diameter of this imaginary swarm is the area-average particle size of the original swarm. Area-average particle size can be obtained through statistical analysis, using transmission electron microscopy to statistically analyze the particle size of each particle in the swarm.

[0029] The term "aliphatic chain hydrocarbon group" refers to an aliphatic straight-chain hydrocarbon group or an aliphatic branched hydrocarbon group. "C1-C30 aliphatic chain hydrocarbon group" can be, for example, aliphatic chain hydrocarbon groups of C1-C20, C1-C18, C1-C15, C1-C12, C1-C10, C1-C8, C1-C6, or C1-C3. The aliphatic chain hydrocarbon group can be, for example, an alkyl group of C1-C20, an alkyl group of C1-C12, an alkyl group of C1-C8, or an alkyl group of C1-C6. Suitable examples of "aliphatic chain hydrocarbon group" include, but are not limited to, methyl, ethyl, vinyl, ethynyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, and isobutyl.

[0030] The term "aliphatic subchain hydrocarbon group" refers to a group obtained by removing one hydrogen atom from the aforementioned aliphatic chain hydrocarbon group.

[0031] The term "aliphatic chain alkyl group" refers to a group with the general formula *-O-aliphatic chain hydrocarbon group, where * indicates a bonding site and O represents an oxygen atom. "C1-C30 aliphatic chain alkyl group" can be, for example, C1-C20, C1-C18, C1-C15, C1-C12, C1-C10, C1-C8, C1-C6, or C1-C3 aliphatic chain alkyl group. The aliphatic chain hydrocarbon group can be, for example, a C1-C20 alkoxy group, a C1-C12 alkoxy group, a C1-C8 alkoxy group, or a C1-C6 alkoxy group. Suitable examples include, but are not limited to, methoxy (-O-CH3 or -OMe), ethoxy (-O-CH2CH3 or -OEt), tert-butoxy (-OC(CH3)3 or -OtBu), and n-hexyloxy (-O-C6H). 13 ), n-decanoyloxy (-OC) 10 H 21 ), or n-dodecyloxy (-OC) 12 H 25 ).

[0032] The term "aliphatic cyclic hydrocarbon group" refers to an aliphatic hydrocarbon group having a cyclic structure. "Aliphatic cyclic hydrocarbon groups with 3 to 30 ring atoms" can be, for example, aliphatic cyclic hydrocarbon groups with 3 to 20 ring atoms, 3 to 18 ring atoms, 3 to 16 ring atoms, 3 to 14 ring atoms, 3 to 12 ring atoms, 3 to 10 ring atoms, 3 to 8 ring atoms, 3 to 6 ring atoms, or 3 to 5 ring atoms. The number of carbon atoms in the aliphatic cyclic hydrocarbon group can be, for example, 3 to 5, 3 to 8, 3 to 10, 3 to 14, 3 to 16, 3 to 18, or 3 to 20. More specifically, the aliphatic cycloalkyl group can be, for example, a C3-C20 cycloalkyl, C3-C18 cycloalkyl, C3-C16 cycloalkyl, C3-C14 cycloalkyl, C3-C10 cycloalkyl, C3-C8 cycloalkyl, or C3-C5 cycloalkyl. Suitable examples include, but are not limited to, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, or adamantyl.

[0033] The term "aliphatic subcyclic hydrocarbon group" refers to a group obtained by removing one hydrogen atom from the aforementioned aliphatic cyclic hydrocarbon group.

[0034] The term "aliphatic heterocyclic hydrocarbon group" refers to an aliphatic cyclic hydrocarbon group in which at least one carbon atom is replaced by a non-carbon atom. The non-carbon atom can be one or more of N, O, S, Si, and P atoms. The number of heteroatoms in the aliphatic heterocyclic hydrocarbon group is independently between 1 and 20. "Aliphatic heterocyclic hydrocarbon group with 3 to 30 ring atoms" can be, for example, an aliphatic heterocyclic hydrocarbon group with 3 to 20 ring atoms, an aliphatic heterocyclic hydrocarbon group with 3 to 18 ring atoms, an aliphatic heterocyclic hydrocarbon group with 3 to 16 ring atoms, an aliphatic heterocyclic hydrocarbon group with 3 to 14 ring atoms, an aliphatic heterocyclic hydrocarbon group with 3 to 12 ring atoms, an aliphatic heterocyclic hydrocarbon group with 3 to 10 ring atoms, an aliphatic heterocyclic hydrocarbon group with 3 to 8 ring atoms, an aliphatic heterocyclic hydrocarbon group with 3 to 6 ring atoms, or an aliphatic heterocyclic hydrocarbon group with 3 to 5 ring atoms. Suitable examples of aliphatic heterocyclic hydrocarbon groups include, but are not limited to, cyclothioethyl, acridine, or ethylene oxide.

[0035] The term "aliphatic heterocyclic hydrocarbon group" is a group obtained by removing one hydrogen atom from the aforementioned aliphatic heterocyclic hydrocarbon group.

[0036] The term "aryl" refers to an aromatic hydrocarbon group derived from an aromatic ring compound by removing one hydrogen atom. It can be a monocyclic aryl, a fused-ring aryl, or a polycyclic aryl, and in the case of a polycyclic ring, at least one of the rings is an aromatic ring system. "Aryl with 6 to 30 ring atoms" can, for example, be an aryl with 6 to 24 ring atoms, an aryl with 6 to 20 ring atoms, an aryl with 6 to 18 ring atoms, an aryl with 6 to 16 ring atoms, an aryl with 6 to 14 ring atoms, or an aryl with 6 to 10 ring atoms. Suitable examples include, but are not limited to, phenyl, biphenyl, terphenyl, naphthyl, anthracene, phenanthryl, fluoranyl, triphenylene, pyrene, perylene, tetraphenyl, fluorenyl, dinaphthylphenyl, acenaphthyl, and their derivatives. Understandably, multiple aryl groups can also be interrupted by short non-aromatic units (e.g., <10% non-H atoms, such as C, N, or O atoms), specifically acenaphthene, fluorene, or 9,9-diarylfluorene, triarylamine, and diaryl ether systems should also be included in the definition of aryl.

[0037] The term "aryl" refers to a group obtained by removing a hydrogen atom from the aforementioned aryl group.

[0038] The term "aryloxy group" refers to a group with the general formula *-O-aryl, where * indicates a linking site and O indicates an oxygen atom. "Aryloxy group with 6 to 30 ring atoms" can be, for example, an aryloxy group with 6 to 24 ring atoms, an aryloxy group with 6 to 20 ring atoms, an aryloxy group with 6 to 18 ring atoms, an aryloxy group with 6 to 16 ring atoms, an aryloxy group with 6 to 14 ring atoms, or an aryloxy group with 6 to 10 ring atoms. Suitable examples include, but are not limited to, phenoxy, naphthoxy, or biphenyloxy.

[0039] The term "aryloxy group" refers to the group obtained by removing a hydrogen atom from the aforementioned aryloxy group.

[0040] The term "arylamino" refers to the general formula... The group. Ar6 and Ar7 are each independently selected from -H, -D, unsubstituted or substituted aryl groups having 6 to 30 ring atoms, or combinations of these groups, and at least one of Ar6 and Ar7 is selected from unsubstituted or substituted aryl groups having 6 to 30 ring atoms; R 19 and R 20 Ar8 is selected independently from -H, -D, unsubstituted or substituted with at least one R' C1-C30 aliphatic chain hydrocarbon group, unsubstituted or substituted with at least one R' C1-C30 aliphatic chain hydroxyl group, unsubstituted or substituted with at least one R' aryl group having 6 to 30 ring atoms, or combinations of the foregoing groups. Ar8 is selected from unsubstituted or substituted with at least one R' substituted aryl group having 6 to 30 ring atoms. Each time R' appears, it is independently selected from -D, C1-C20 aliphatic chain hydrocarbon group, C1-C20 aliphatic chain hydroxyl group, aryl group having 6 to 30 ring atoms, or combinations of these groups. "Arylamino group having 6 to 30 ring atoms" can be, for example, an arylamino group having 6 to 24 ring atoms, an arylamino group having 6 to 20 ring atoms, an arylamino group having 6 to 18 ring atoms, an arylamino group having 6 to 16 ring atoms, an arylamino group having 6 to 14 ring atoms, or an arylamino group having 6 to 10 ring atoms. Suitable examples include, but are not limited to, aminophenyl, aminonaphthyl, or aminobiphenyl.

[0041] The term "arylthio" refers to a group with the general formula *-S-aryl, where * represents a linking site and S represents a sulfur atom. "Arylthio with 6 to 30 ring atoms" can be, for example, an arylthio with 6 to 24 ring atoms, an arylthio with 6 to 20 ring atoms, an arylthio with 6 to 18 ring atoms, an arylthio with 6 to 16 ring atoms, an arylthio with 6 to 14 ring atoms, or an arylthio with 6 to 10 ring atoms. Suitable examples include, but are not limited to, phenylthio, methylthionaphthyl, or biphenylthio.

[0042] The term "arylene thioyl" refers to a group obtained by removing a hydrogen atom from the aforementioned arylene thioyl group.

[0043] The term "heteroaryl" refers to an aryl group in which at least one carbon atom is replaced by a non-carbon atom. The non-carbon atom can be one or more of N, O, S, Si, and P atoms, and the number of heteroatoms can be, for example, 1 to 20. "Heteroaryl with 5 to 30 ring atoms" can be, for example, a heteroaryl with 5 to 24 ring atoms, a heteroaryl with 5 to 20 ring atoms, a heteroaryl with 5 to 18 ring atoms, a heteroaryl with 5 to 16 ring atoms, a heteroaryl with 5 to 14 ring atoms, or a heteroaryl with 5 to 10 ring atoms. Suitable examples include, but are not limited to, thiophene, furanyl, pyrrolyl, diazolyl, triazolyl, imidazole, pyridyl, bipyridyl, pyrimidinyl, triazinyl, acridineyl, pyridazinyl, quinolinyl, isoquinolinyl, quinazolinyl, quinoxalinyl, phthalazinyl, pyridopyrimidinyl, pyridopyrazinyl, benzothiophene, benzofuranyl, indolyl, pyrroloimidazolyl, pyrrolopyrrolyl, thienopyrrolyl, thienopyrrolyl, furanolyl, furanolyl, thienofuranyl, benzoisoxazolyl, benzoisothiazolyl, benzoimidazolyl, o-diazonyl, phenanthridine, primidyl, quinazolinone, dibenzothiophene, dibenzofuranyl, or carbazolyl.

[0044] The term "hybrid aryl" refers to a group obtained by removing a hydrogen atom from the aforementioned heteroaryl group.

[0045] The term "heteroaryl group" refers to a group with the general formula *-O-heteroaryl, where * represents the linking site and O represents an oxygen atom. "Heteroaryl group with 5 to 30 ring atoms" can be, for example, a heteroaryl group with 5 to 24 ring atoms, a heteroaryl group with 5 to 20 ring atoms, a heteroaryl group with 5 to 18 ring atoms, a heteroaryl group with 5 to 16 ring atoms, a heteroaryl group with 5 to 14 ring atoms, or a heteroaryl group with 5 to 10 ring atoms.

[0046] The term "heteroaryl thio" refers to a group with the general formula *-S-heteroaryl, where * represents the linking site and S represents a sulfur atom. "Heteroaryl thio" having 5 to 30 ring atoms can be, for example, a heteroaryl thio with 5 to 24 ring atoms, a heteroaryl thio with 5 to 20 ring atoms, a heteroaryl thio with 5 to 18 ring atoms, a heteroaryl thio with 5 to 16 ring atoms, a heteroaryl thio with 5 to 14 ring atoms, or a heteroaryl thio with 5 to 10 ring atoms.

[0047] The term "heteroarylamino" refers to a compound with the general formula […]. The group. Among them, Ar9 and Ar 10 Each group is independently selected from -H, -D, unsubstituted or substituted with at least one R" heteroaryl group having a ring atom number of 5 to 30, or a combination of these groups, and Ar9 and Ar 10At least one of them is selected from unsubstituted or heteroaryl groups having 5 to 30 ring atoms substituted with at least one R"; R 21 and R 22 Ar is independently selected from -H, -D, unsubstituted or substituted with at least one R” C1-C30 aliphatic chain hydrocarbon group, unsubstituted or substituted with at least one R” C1-C30 aliphatic chain hydroxyl group, unsubstituted or substituted with at least one R” ring atom numbering 5 to 30 heteroaryl group, or a combination of the aforementioned groups. 11 Selected from unsubstituted or substituted with at least one R”, a heteroaryl group having a ring number of 5 to 30. Each time R” appears, it is independently selected from -D, a C1 to C20 aliphatic chain hydrocarbon group, a C1 to C20 aliphatic chain hydroxyl group, a heteroaryl group having a ring number of 5 to 30, or a combination of these groups. “A heteroarylamino group having a ring number of 5 to 30” can be, for example, a heteroarylamino group having a ring number of 5 to 24, a heteroarylamino group having a ring number of 5 to 20, a heteroarylamino group having a ring number of 5 to 18, a heteroarylamino group having a ring number of 5 to 16, a heteroarylamino group having a ring number of 5 to 14, or a heteroarylamino group having a ring number of 5 to 10.

[0048] In this application, the single bonds connecting the substituents extend through the corresponding ring, indicating that the substituent can be connected to any position on the ring.

[0049] In this application, "halogen group" or "halogen" represents -Cl, -Br, -F or -I; hydroxyl group represents -OH; carboxyl group represents -COOH; nitro group represents -NO2; sulfonic acid group represents -SO3H; mercapto group represents -SH; cyano group represents *-C≡N.

[0050] In this application, the thickness of the thin film refers to the average thickness of the thin film, and the thickness of a certain functional layer refers to the average thickness of the functional layer. The thickness is obtained by measuring a step tester.

[0051] In this application, the symbol "*" represents a connection site.

[0052] The terms “combinations thereof,” “any combination thereof,” and “any combination thereof” as used in this application include all suitable combinations of any two or more of the listed items.

[0053] Based on this, embodiments of this application provide an optoelectronic device, which includes, but is not limited to, light-emitting devices, photovoltaic cells, or photodetectors, such as... Figures 1 to 3As shown, the optoelectronic device 10 includes an anode 101, a hole functional layer 102, an active layer 103, an electronic functional layer 104, and a cathode 105 stacked sequentially; the optoelectronic device 10 also includes a first auxiliary layer 106 disposed between the hole functional layer 102 and the active layer 103, and / or a second auxiliary layer 107 disposed between the electronic functional layer 104 and the active layer 103. The first auxiliary layer 106 is made of a first organic compound with a molecular weight of 100 to 2000, for example, 100, 300, 500, 800, 1000, 1200, 1600, 1800, 2000, or any two of the aforementioned values. The first organic compound contains at least one silicon-nitrogen bond. The second auxiliary layer 107 is made of a non-polymeric second organic compound with a molecular weight of 100 to 2000, for example, 100, 300, 500, 800, 1000, 1200, 1600, 1800, 2000, or any two of the aforementioned values. The second organic compound contains at least one silicon-nitrogen bond. It is understood that both the first and second organic compounds are non-polymeric, meaning they are both small molecule compounds (molecular weight of 100 to 2000), and neither is polymerized from one or more monomers.

[0054] In the optoelectronic device 10 of this application embodiment, by adding a first auxiliary layer 106 between the hole functional layer 102 and the active layer 103, a large electron injection barrier is formed between the first auxiliary layer 106 and the hole functional layer 102, enabling the first auxiliary layer 106 to block electrons. This effectively mitigates the damage to the hole functional layer 102 caused by excessive electron leakage, thereby improving the device lifetime and performance stability of the optoelectronic device 10. And / or, by adding a second auxiliary layer 107 between the electron functional layer 104 and the active layer 103, the electron injection level of the optoelectronic device 10 can be improved, which is beneficial to improving the device efficiency of the optoelectronic device 10. When the optoelectronic device 10 simultaneously includes the first auxiliary layer 106 and the second auxiliary layer 107, it can promote electron-hole transport balance, reduce interface defects, improve carrier injection and recombination efficiency, and further improve the device lifetime and performance stability of the optoelectronic device 10.

[0055] In addition, the first organic compound and the second organic compound each contain at least one silicon-nitrogen bond. The silicon-nitrogen bond is a relatively strong covalent bond. It is a chemical bond formed by the sharing of electrons between silicon atoms and nitrogen atoms. Furthermore, silicon atoms and nitrogen atoms have similar electronegativity and a relatively uniform electron cloud distribution. This makes the silicon-nitrogen bond more stable in terms of high temperature and chemical stability than chemical bonds formed between silicon atoms and other atoms (such as silicon-oxygen bonds), thereby further improving the device lifespan and performance stability of the optoelectronic device 100.

[0056] To further improve the surface flatness of the first auxiliary layer 106 and / or the second auxiliary layer 107, and to further reduce the operating voltage of the optoelectronic device 10, in some embodiments of this application, the first organic compound and the second organic compound each independently include the first compound with the structure shown in general formula (I) and / or the second compound with the structure shown in general formula (II):

[0057]

[0058] In general formulas (I) and (II), R1 to R8 are each independently selected from -H, -D, unsubstituted or substituted with at least one R C1-C30 aliphatic chain hydrocarbon group, unsubstituted or substituted with at least one R C1-C30 aliphatic chain hydroxyl group, unsubstituted or substituted with at least one R aliphatic cyclic hydrocarbon group with 3 to 30 ring atoms, unsubstituted or substituted with at least one R aliphatic heterocyclic hydrocarbon group with 3 to 30 ring atoms, unsubstituted or substituted with at least one R aryl group with 6 to 30 ring atoms, unsubstituted or substituted with at least one R An aryloxy group having 6 to 30 ring atoms substituted with one R; an unsubstituted arylthio group having 6 to 30 ring atoms substituted with at least one R; an unsubstituted arylamino group having 6 to 30 ring atoms substituted with at least one R; an unsubstituted heteroaryl group having 5 to 30 ring atoms substituted with at least one R; an unsubstituted heteroaryloxy group having 5 to 30 ring atoms substituted with at least one R; an unsubstituted heteroarylthio group having 5 to 30 ring atoms substituted with at least one R; an unsubstituted heteroarylamino group having 5 to 30 ring atoms substituted with at least one R. Or a combination of these groups.

[0059] In general formula (II), each occurrence of R9 is independently selected from unsubstituted or substituted with at least one R aliphatic subchain hydrocarbon group of C1 to C30, unsubstituted or substituted with at least one R aliphatic subchain hydroxyl group of C1 to C30, unsubstituted or substituted with at least one R aliphatic subcyclic hydrocarbon group of 3 to 30 ring atoms, unsubstituted or substituted with at least one R aliphatic heterocyclic hydrocarbon group of 3 to 30 ring atoms, unsubstituted or substituted with at least one R aryl group of 6 to 30 ring atoms, and unsubstituted or substituted with at least one R ring atoms. The following are considered as a group of compounds: aryloxy groups having 6 to 30 ring atoms; unsubstituted or substituted with at least one R ring atoms having 6 to 30 ring atoms; unsubstituted or substituted with at least one R ring atoms having 6 to 30 ring atoms; unsubstituted or substituted with at least one R ring atoms having 5 to 30 ring atoms; unsubstituted or substituted with at least one R ring atoms having 5 to 30 ring atoms; unsubstituted or substituted with at least one R ring atoms having 5 to 30 ring atoms; unsubstituted or substituted with at least one R ring atoms having 5 to 30 ring atoms; Or a combination of these groups.

[0060] R 10 To R 12 Each occurrence is independently selected from -H, -D, unsubstituted or substituted with at least one R C1-C30 aliphatic chain hydrocarbon group, unsubstituted or substituted with at least one R C1-C30 aliphatic chain hydroxyl group, unsubstituted or substituted with at least one R aliphatic cyclic hydrocarbon group having 3 to 30 ring atoms, unsubstituted or substituted with at least one R aliphatic heterocyclic hydrocarbon group having 3 to 30 ring atoms, unsubstituted or substituted with at least one R aryl group having 6 to 30 ring atoms, and unsubstituted or substituted with at least one R aliphatic heterocyclic hydrocarbon group having 6 to 30 ring atoms. The aryloxy group of 0, an unsubstituted or at least R-substituted arylthio group having a ring number of 6 to 30, an unsubstituted or at least R-substituted arylamino group having a ring number of 6 to 30, an unsubstituted or at least R-substituted heteroaryl group having a ring number of 5 to 30, an unsubstituted or at least R-substituted heteroaryloxy group having a ring number of 5 to 30, an unsubstituted or at least R-substituted heteroarylthio group having a ring number of 5 to 30, an unsubstituted or at least R-substituted heteroarylamino group having a ring number of 5 to 30, or a combination of these groups.

[0061] Each time R appears, it is independently -D, a C1-C20 aliphatic chain hydrocarbon group, a C1-C20 aliphatic chain alkyloxy group, an aliphatic cyclic hydrocarbon group with 3 to 20 ring atoms, an aliphatic heterocyclic hydrocarbon group with 3 to 20 ring atoms, an aryl group with 6 to 20 ring atoms, an aryloxy group with 6 to 20 ring atoms, an arylthio group with 6 to 20 ring atoms, an arylamino group with 6 to 20 ring atoms, a heteroaryl group with 5 to 20 ring atoms, a heteroaryloxy group with 5 to 20 ring atoms, a heteroarylthio group with 5 to 20 ring atoms, a heteroarylamino group with 5 to 20 ring atoms, and *-NR. a R b Halogen groups, hydroxyl groups, carboxyl groups, nitro groups, sulfonic acid groups, aldehyde groups, Mercapto, cyano, or combinations of these groups; R a R b R c R d R f and R g Each time it appears, it is independently selected from -H, -D, C1-C20 aliphatic chain hydrocarbon groups, C1-C20 aliphatic chain hydroxyl groups, aliphatic cyclic hydrocarbon groups with 3 to 20 ring atoms, aliphatic heterocyclic hydrocarbon groups with 3 to 20 ring atoms, aryl groups with 6 to 20 ring atoms, heteroaryl groups with 5 to 20 ring atoms, or combinations of these groups; R e It is selected from C1 to C20 aliphatic subchain hydrocarbon groups, C1 to C20 aliphatic subchain hydrocarbon oxygen groups, aliphatic subcyclic hydrocarbon groups with 3 to 20 ring atoms, aliphatic heterocyclic hydrocarbon groups with 3 to 20 ring atoms, arylene groups with 6 to 20 ring atoms, heteroarylene groups with 5 to 20 ring atoms, or combinations of these groups.

[0062] It should be noted that, taking the first auxiliary layer 106 as an example, compared with using a polymer containing silicon-nitrogen bonds and / or silicon-oxygen bonds as the material of the first auxiliary layer 106, using the first compound and / or the second compound as the material of the first auxiliary layer 106 can further improve the device life and performance stability of the optoelectronic device 10. The reason is that: when using a polymer containing silicon-nitrogen bonds and / or silicon-oxygen bonds as the material of the first auxiliary layer 106, the polymer has poor conductivity, which will significantly increase the voltage of the optoelectronic device 10, causing excessive carrier accumulation at the interface between the hole functional layer 102 and the active layer 103, which will have a negative impact on hole injection and / or transport. In addition, such polymers are usually formed by solution method, which has problems such as poor film quality and difficulty in controlling the formation of thin film layers (for example, 1nm to 3nm). Similarly, compared to using polymers containing silicon-nitrogen bonds and / or silicon-oxygen bonds as the material of the second auxiliary layer 107, using the first compound and / or the second compound as the material of the second auxiliary layer 107 can further improve the device life and performance stability of the optoelectronic device 10.

[0063] In order to further improve the surface flatness of the first auxiliary layer 106 and / or the second auxiliary layer 107, and to further reduce the operating voltage of the optoelectronic device 10, in some embodiments of this application, the molecular weight of the first compound is not higher than 250, for example not higher than 220, not higher than 200, not higher than 180, not higher than 150 or not higher than 100; and / or, the molecular weight of the second compound is not higher than 250, for example not higher than 220, not higher than 200, not higher than 180, not higher than 150 or not higher than 100.

[0064] To further improve the surface flatness of the first auxiliary layer 106 and / or the second auxiliary layer 107, and to further reduce the operating voltage of the optoelectronic device 10, in some embodiments of this application, the boiling point of the first organic compound is not greater than 200°C, and / or the boiling point of the second organic compound is not greater than 200°C. For example, the boiling point of the first organic compound is 150°C to 200°C, and / or the boiling point of the second organic compound is 150°C to 200°C.

[0065] In some embodiments of this application, in general formulas (I) and (II), R1 to R8 are each independently selected from -H, -D, unsubstituted or substituted with at least one R C1-C10 aliphatic chain hydrocarbon group, unsubstituted or substituted with at least one R C1-C10 aliphatic chain hydroxyl group, unsubstituted or substituted with at least one R aliphatic cyclic hydrocarbon group having 3 to 10 ring atoms, unsubstituted or substituted with at least one R aliphatic heterocyclic hydrocarbon group having 3 to 10 ring atoms, unsubstituted or substituted with at least one R aryl group having 6 to 14 ring atoms, and unsubstituted or substituted with at least one R heteroaryl group having 5 to 14 ring atoms. Or a combination of the aforementioned groups;

[0066] Each time R9 appears, it is independently selected from unsubstituted or substituted with at least one R C1-C10 aliphatic subchain hydrocarbon group, unsubstituted or substituted with at least one R C1-C10 aliphatic subchain hydroxyl group, unsubstituted or substituted with at least one R aliphatic subcyclic hydrocarbon group having 3 to 10 ring atoms, unsubstituted or substituted with at least one R aliphatic heterocyclic hydrocarbon group having 3 to 10 ring atoms, unsubstituted or substituted with at least one R aryl group having 6 to 14 ring atoms, and unsubstituted or substituted with at least one R heterocyclic hydrocarbon group having 5 to 14 ring atoms. Or a combination of the aforementioned groups;

[0067] R 10 To R 12Each time it appears, it is independently selected from -H, -D, unsubstituted or substituted with at least one R C1 to C10 aliphatic chain hydrocarbon group, unsubstituted or substituted with at least one R C1 to C10 aliphatic chain hydroxyl group, unsubstituted or substituted with at least one R aliphatic cyclic hydrocarbon group having 3 to 10 ring atoms, unsubstituted or substituted with at least one R aliphatic heterocyclic hydrocarbon group having 3 to 10 ring atoms, unsubstituted or substituted with at least one R aryl group having 6 to 14 ring atoms, unsubstituted or substituted with at least one R heteroaryl group having 5 to 14 ring atoms, or combinations of these groups;

[0068] Each time R appears, it is independently -D, an aliphatic chain hydrocarbon group of C1 to C10, an aliphatic chain hydrocarbon oxygen group of C1 to C10, an aliphatic cyclic hydrocarbon group with 3 to 10 ring atoms, an aliphatic heterocyclic hydrocarbon group with 3 to 10 ring atoms, an aryl group with 6 to 10 ring atoms, a heteroaryl group with 5 to 10 ring atoms, or a combination of the aforementioned groups.

[0069] Optionally, in at least one embodiment of this application, the first compound has the structure shown in the following general formula (I-1):

[0070]

[0071] In general formula (Ⅰ-1), R1 to R4, R 10 To R 12 Each time it appears, it is independently selected from C1-C10 alkyl, C2-C10 alkenyl, C2-C10 alkynyl, C1-C10 alkoxy, aryl with 6 to 14 ring atoms, heteroaryl with 5 to 14 ring atoms, or combinations of these groups. Further, R1 to R4, R... 10 To R 12 Each time it appears, it is independently selected from C1-C4 alkyl, C2-C4 alkenyl, C2-C4 alkynyl, or C1-C4 alkoxy groups. For example, R1 to R3 and R 10 To R 12 Each time it appears, it is independently selected from methyl, ethyl, or a combination of these groups; each time R4 appears, it is independently selected from hydrogen, deuterium, methyl, ethyl, methoxy, ethoxy, vinyl, or a combination of these groups.

[0072] Optionally, in at least one embodiment of this application, the second compound has the structure shown in the following general formula (Ⅱ-1):

[0073]

[0074] In general formula (Ⅱ-1), R6 to R8, R 10 To R 12Each time it appears, it is independently selected from C1-C10 alkyl, C2-C10 alkenyl, C2-C10 alkynyl, C1-C10 alkoxy, aryl with 6 to 14 ring atoms, heteroaryl with 5 to 14 ring atoms, or combinations of these groups. Further, R6 to R8, R... 10 To R 12 Each time it appears, it is independently selected from C1-C4 alkyl, C2-C4 alkenyl, C2-C4 alkynyl, or C1-C4 alkoxy groups. For example, R6 to R8 and R 10 To R 12 Each time it appears, it is independently selected from methyl, ethyl, or a combination of these groups, R 13 Each time it appears, it is independently selected from hydrogen, deuterium, methyl, ethyl, methoxy, ethoxy, vinyl, or a combination of these groups.

[0075] To further improve the device lifetime and performance stability of the optoelectronic device 10, in some embodiments of this application, the first organic compound and the second organic compound are each independently selected from one or more of the following compounds:

[0076]

[0077] Among the above compounds, the CAS number of compound M1 is 999-97-3, the CAS number of compound M2 is 15933-59-2, the CAS number of compound M3 is 17882-94-9, the CAS number of compound M4 is 920-68-3, the CAS number of compound M5 is 7266-76-4, the CAS number of compound M6 is 63163-75-7, the CAS number of compound M7 is 10416-59-8, the CAS number of compound M8 is 53120-79-9, and the CAS number of compound M9 is 17898-14-5.

[0078] In order to further reduce the resistance generated by introducing the first auxiliary layer 106 and / or the second auxiliary layer 107, thereby further reducing the operating voltage of the optoelectronic device 10, in some embodiments of this application, the thickness of the first auxiliary layer 106 is 1nm to 3nm, for example, it can be 1nm, 2nm, 3nm or any two of the aforementioned values; and / or, the thickness of the second auxiliary layer 107 is 1nm to 3nm, for example, it can be 1nm, 2nm, 3nm or any two of the aforementioned values.

[0079] In some embodiments of this application, the optoelectronic device 10 is a light-emitting device; see further details. Figures 1 to 3 The active layer 103 is a light-emitting layer. The material of the active layer 103 includes one or more of organic light-emitting materials and quantum dots. The thickness of the active layer 103 is, for example, 10 nm to 100 nm.

[0080] Among them, organic light-emitting materials include, but are not limited to, one or more of the following: 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridinium(III), 4,4',4”-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridinium, diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid local charge transfer excited state materials, excitopolymer light-emitting materials, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, and polyfluorene and its derivatives.

[0081] Quantum dots include, but are not limited to, one or more of red, green, and blue quantum dots, and include, but are not limited to, single-component quantum dots, core-shell quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots, and organic-inorganic hybrid perovskite quantum dots, wherein the shell of the core-shell quantum dot has one or more layers. The average particle size of the quantum dots can be, for example, 2 nm to 30 nm, with examples being 2 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, or any two of the aforementioned values.

[0082] For single-component quantum dots and core-shell quantum dots, the material of the single-component quantum dot, the material of the core of the core-shell quantum dot, or the material of the shell of the core-shell quantum dot includes, but is not limited to, at least one of group II-VI compounds, group III-V compounds, group III-VI compounds, group IV-VI compounds, or group I-III-VI compounds. Among them, the II-VI group compounds include, but are not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. III-VI group compounds include, but are not limited to, one or more of In2S3, In2Se3, InGaS3, and InGaSe3. III-V group compounds include, but are not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. Group IV-VI compounds include, but are not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. Group I-III-VI compounds include, but are not limited to, one or more of AgInS, AgInS2, CuInS, CuInS2, AgGaS2, CuGaS2, CuGaO2, AgGaO2, AgAlO2, AgInGaS2, and CuInGaS2.

[0083] As an example, the core-shell structured quantum dots may include, but are not limited to, one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS. It should be noted that in the core-shell structured quantum dots, " / " represents a shell. Taking CdSe / CdSeS / CdS as an example, CdSe is the quantum dot core, CdSeS is the first shell, and CdS is the second shell.

[0084] For inorganic perovskite quantum dots, the general structural formula is QJT3, where Q is Cs. + J is a divalent metal cation, and each occurrence of J is independently selected from Pb. 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Or Eu 2+ T is a halide anion, and each time T appears, it is independently selected from Cl. - ,Br - or I - .

[0085] For organic perovskite quantum dots, the general structural formula of organic perovskite quantum dots is LJT3, where L is a formamidinyl group, and the range of choices for J and T is as described above.

[0086] For organic-inorganic hybrid perovskite quantum dots, the general structural formula is GJT3, where G is selected from organic amine cations, including but not limited to CH3(CH2). n-2 NH 3+ (n≥2) or NH3(CH2) n NH3 2+(n≥2), the selection range of J and T is described above. When n=2, the inorganic metal halide octahedrons JT64- are connected by a common vertex, the metal cation J is located at the body center of the halogen octahedron, and the organic amine cation G fills the gaps between the octahedrons, forming an infinitely extended three-dimensional structure; when n>2, the inorganic metal halide octahedrons JT64- connected by a common vertex extend in the two-dimensional direction to form a layered structure, with organic amine cation bilayers (protonated monoamines) or organic amine cation monolayers (protonated diamines) inserted between the layers, and the organic and inorganic layers overlap to form a stable two-dimensional layered structure.

[0087] It is understandable that ligands can also be attached to the surface of quantum dots. These ligands can be common in the field, including but not limited to C1 to C2. 30 aliphatic carboxylic acid ligands, C6-C 30 Aromatic carboxylic acid ligands, C1-C 30 Aliphatic thiol ligands, C6-C 30 Thiol aromatic ligands, C1-C 30 fatty amine ligands, C6-C 30 Aromatic amine ligands, C1-C 30 Aliphatic phosphine ligands, C6~C 30 Aromatic phosphine ligands and C6-C 30 One or more of aromatic phosphate ligands and halogen ligands.

[0088] Among them, C1~C 30 The aliphatic carboxylic acid ligands include, but are not limited to, one or more of the following: octanoic acid, nonanoic acid, decanoic acid, undecanoic acid, dodecanoic acid, tetradecanoic acid, hexadecanoic acid, octadecanoic acid, eicosanoic acid, teicosanoic acid, oleic acid, linoleic acid, arachidic acid, arachidonic acid, erucic acid, and docosahexaenoic acid; C6~C 30 Aromatic carboxylic acid ligands include, but are not limited to, one or more of benzoic acid, biphenylic acid, and 1-naphthoic acid. (C1-C2) 30 The aliphatic thiol ligands include, but are not limited to, one or more of hexamethylenetetramine, octanethiol, nonanethiol, decanethiol, undecylthiol, dodecathiol, hexadecylthiol, and octadecylthiol, C6–C6. 30 Thiol aromatic ligands include, but are not limited to, one or more of benzenethiol, triphenylmethanethiol, and p-terphenyl-4,4”-dithiol. C1~C 30 The aliphatic amine ligands include, but are not limited to, one or more of hexylamine, octylamine, dioctylamine, trioctylamine, nonylamine, decylamine, dodecylamine, trideamine, tetradeamine, pentadecylamine, hexadecylamine, heptadecanamine, octadecylamine, and oleylamine, C6-C6. 30The aromatic amine ligands include, but are not limited to, one or more of aniline, indenepropylamine, 4-octylaniline, and benzidine. (C1-C2) 30 The aliphatic phosphine ligands include, but are not limited to, one or more of trimethylphosphine, triethylphosphine, tripropylphosphine, tributylphosphine, trihexylphosphine, trioctylphosphine, tridecylphosphine, tributylphosphine oxide, trihexylphosphine oxide, trioctylphosphine oxide, and tridecylphosphine oxide, C6–C6. 30 Aromatic phosphine ligands include, but are not limited to, one or more of bis(2-diphenylphosphineethyl)phenylphosphine and triphenylphosphine oxide, C6-C6. 30 The aromatic phosphate ligands include, but are not limited to, one or more of tetraethyl p-xylene diphosphate and ethyl diphenyl phosphate. Halogen ligands include, but are not limited to, -Cl, -F, -I, or -Br.

[0089] In the optoelectronic device 10 of this application embodiment, the electronic functional layer 104 can be a single-layer structure or a multi-layer structure, and the thickness of the electronic functional layer 104 is, for example, 10nm to 100nm. As an example, the electronic functional layer 104 is a single-layer structure, and the electronic functional layer 104 is an electron transport layer.

[0090] When the electronic functional layer 104 is a multilayer structure, the electronic functional layer 104 includes, for example, one or more of an electron injection layer, an electron transport layer, and a hole blocking layer. For the electronic functional layer 104 including an electron injection layer, an electron transport layer, and a hole blocking layer, the electron transport layer is located between the electron injection layer and the hole blocking layer, and the hole blocking layer is closer to the anode 101 than the electron injection layer. For the electronic functional layer 104 including an electron transport layer and a hole blocking layer, the hole blocking layer is closer to the anode 101 than the electron transport layer. For the electronic functional layer 104 including an electron injection layer and an electron transport layer, the electron transport layer is closer to the anode 101 than the electron injection layer.

[0091] In some embodiments of this application, the material of the electronic functional layer 104 includes one or more of a first inorganic material and a second inorganic material. The first inorganic material includes one or more of an undoped first metal oxide, a group IIB-VIA semiconductor material, a group IIIA-VA semiconductor material, a group IB-IIIA-VIA semiconductor material, ZrSiO4, BaTiO3, BaZrO3, and Si3N4. The undoped first metal oxide is selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, and ZrO2. The group IIB-VIA semiconductor material is selected from one or more of ZnS, ZnSe, and CdS. The group IIIA-VA semiconductor material is selected from one or more of InP and GaP. The group IB-IIIA-VIA semiconductor material is selected from one or more of CuInS and CuGaS. The second inorganic material includes one or more doped third compounds, the general formula of which is A. (1-x) M x O, where 0 < x ≤ 0.5, A and M are not the same, and A and M are independently selected from one or more of Zn, Ti, Sn, Ba, Ta, Al, Zr, Mg, Ga, Li, Ga, In and Y, respectively, and the molar percentage of the doping element in the doped third compound is, for example, not higher than 5%, not higher than 10%, not higher than 20%, not higher than 30% or not higher than 50%.

[0092] In some embodiments of this application, the doped third compound is selected from Zn. (1-x) Mg x O, Zn (1-x) Ca x O, Zn (1-x) Zr x O, Zn (1-x) Ga x O, Zn (1-x) Al x O, Zn (1-x) Li x O, Al (1-x) Zn x O, Zn (1-x) Ti x O, Zn (1-x) Y x O、In (1-x) Sn x O and Ti (1-x) Li x One or more of O.

[0093] It should be noted that when the material of the active layer 103 includes quantum dots, the provision of a second auxiliary layer 107 between the electronic functional layer 104 and the active layer 103 can effectively reduce the non-radiative recombination channels caused by the electronic functional material, improve the quenching phenomenon of quantum dots, and thus improve the device efficiency of the optoelectronic device 10.

[0094] In the optoelectronic device 10 of this application embodiment, the hole functional layer 102 can be a single-layer structure or a multi-layer structure, and the thickness of the hole functional layer 102 is, for example, 10nm to 100nm. When the hole functional layer 102 is a multi-layer structure, the hole functional layer 102 includes, for example, one or more of a hole injection layer, a hole transport layer, and an electron blocking layer. For the hole functional layer 102 including a hole injection layer, a hole transport layer, and an electron blocking layer, the hole transport layer is located between the hole injection layer and the electron blocking layer, and the hole injection layer is closer to the anode 101 than the electron blocking layer. For the hole functional layer 103 including a hole transport layer and an electron blocking layer, the hole transport layer is closer to the anode 101 than the electron blocking layer. For the hole functional layer 102 including a hole injection layer and a hole transport layer, the hole injection layer is closer to the anode 101 than the hole transport layer.

[0095] In some embodiments of this application, the material of the hole functional layer 102 includes one or more of organic materials, a third inorganic material, and a fourth inorganic material. The organic materials include, but are not limited to, poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS, CAS No. 155090-83-8), copper phthalocyanine (CAS No. 147-14-8), titanium phthalocyanine (CAS No. 26201-32-1), 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone (CAS No. 29261-33-4), 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene (CAS No. 105598-27-4), polyaniline (CAS No. 25233-30-1), and polypyrrole (…). CAS No. 30604-81-0), 3-hexyl-substituted polythiophene (CAS No. 104934-50-1), poly(9-vinylcarbazole) (abbreviated as PVK, CAS No. 25067-59-8), 4,4'-bis(9-carbazole)biphenyl (abbreviated as CBP, CAS No. 58328-31-7), poly[bis(4-phenyl)(4-butylphenyl)amine] (abbreviated as Poly-TPD, CAS No. 472960-35-3), 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline] (abbreviated as TAPC, CAS No. 58473-78-2), poly[(9,9-dioctylfluorenyl-2,7-diyl) -Co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)] (abbreviated as TFB, CAS No. 220797-16-0), poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-di-n-octylfluorenyl-2,7-diyl)] (CAS No. 223569-31-1), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (CAS No. 124729-98-2), 4,4',4”-tris(carbazole-9-yl)triphenylamine (abbreviated as TCTA, CAS No. 139092-78-7), 4,4',4'-tris(2-naphthalene) N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB, CAS No. 123847-85-8), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD, CAS No. 65181-78-4), N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine (CAS No. 209980-53-0), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirodifluorene-2,7-Diamine (Spiro-TPD, CAS No. 1033035-83-4), N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirodi[9H-fluorene]-2,7-diamine (CAS No. 932739-76-9), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTTA, CAS No. 1333317-99-9), 2,2',7,7'-tetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene (Spiro-omeTAD, CAS No. 207739-72-8), N,N,N',N'-tetraarylbenzidine One or more of the following: (CAS No. 15546-43-7), 4,4',4”-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (CAS No. 124729-98-2), N,N'-diphenyl-N,N'-di-[4-(N,N-diphenylamino)phenyl]benzidine (CAS No. 167218-46-4), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (CAS No. 138184-36-8), and poly[2-methoxy-5-[(3,7-dimethyloctyloxy)-1,4-phenyl]-1,2-vinyldiyl] (CAS No. 177716-59-5).

[0096] The third inorganic material includes, for example, one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, hafnium oxide, copper sulfide, molybdenum sulfide, and tungsten sulfide. The fourth inorganic material includes, for example, one or more doped fourth compounds. The host compound of the doped fourth compound includes graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, hafnium oxide, copper sulfide, molybdenum sulfide, or tungsten sulfide. The doping element of the doped fourth compound is selected from one or more of boron, nickel, molybdenum, tungsten, vanadium, chromium, copper, and platinum group metals. The molar amount of the doping element accounts for less than or equal to 50% of the total molar amount of the doped fourth compound.

[0097] In some embodiments of this application, the materials of the anode 101 and the cathode 105 are independently selected from one or more of metals, carbon materials, metal oxides, metal fluorides, metal carbonates, and metal sulfides. The metals include, but are not limited to, one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni, and Mg. The carbon materials include, but are not limited to, one or more of graphite, carbon nanotubes, graphene, and carbon fibers. The metal oxides include, but are not limited to, one or more of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), magnesium-doped zinc oxide (MZO), TiO2, SnO2, ZnO, and In2O3. The metal fluorides include, but are not limited to, one or more of LiF, BaF2, and CsF. The metal carbonates include, but are not limited to, CaCO3. The metal sulfides include, but are not limited to, ZnS.

[0098] The anode 101 and the cathode 105 can also be composite electrodes. The composite electrode can be a double-layer structure or have a sandwich-like structure. The material of each layer in the composite electrode is independently selected from one or more of the following: a second metal, carbon material, a second metal oxide, a metal fluoride, a metal carbonate, and a metal sulfide. The composite electrode with a double-layer structure includes, but is not limited to, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, or CaCO3 / Al. ​​Composite electrodes with a sandwich-like structure include, but are not limited to, BaF2 / Ca / Al, AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2, with the thickness of the intermediate layer not exceeding 35 nm. The thickness of the anode 101 can be, for example, 20 nm to 200 nm, and the thickness of the cathode 105 can be, for example, 20 nm to 200 nm.

[0099] It is understood that the optoelectronic device 10 may also include a substrate, which is disposed on the side of the anode 101 away from the hole functional layer 102 or the side of the cathode 105 away from the electron functional layer 104. The substrate may be a rigid substrate or a flexible substrate. The material of the rigid substrate includes, but is not limited to, one or more of glass, ceramic and silicon wafer. The material of the flexible substrate includes, but is not limited to, one or more of polyimide, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate and polyethersulfone.

[0100] This application also provides a method for fabricating an optoelectronic device, which can be used to fabricate the aforementioned optoelectronic device, comprising the following steps:

[0101] S1. Provide a first electrode, and form multiple functional layers on one side of the first electrode;

[0102] S2. A second electrode is formed on the side of the multiple functional layers away from the first electrode.

[0103] When the first electrode is an anode and the second electrode is a cathode, the step of forming multiple functional layers includes: sequentially forming a hole functional layer, an active layer, and an electron functional layer on one side of the first electrode; or, when the first electrode is a cathode and the second electrode is an anode, the step of forming multiple functional layers includes: sequentially forming an electron functional layer, an active layer, and a hole functional layer on one side of the first electrode.

[0104] The fabrication method of the aforementioned optoelectronic device further includes the steps of: forming a first auxiliary layer between the hole functional layer and the active layer, and / or forming a second auxiliary layer between the electron functional layer and the active layer. The method for preparing the first auxiliary layer includes the step of: depositing a first organic compound to obtain the first auxiliary layer; and / or, the method for preparing the second auxiliary layer includes the step of: depositing a second organic compound to obtain the second auxiliary layer.

[0105] In the above preparation method, the structural composition of the anode, cathode, hole functional layer, active layer, electron functional layer, first auxiliary layer, and second auxiliary layer are all as described above. During the preparation of the first or second auxiliary layer, the deposition method of the first or second organic compound includes, but is not limited to, chemical and / or physical methods. Chemical methods include, but are not limited to, one or more of chemical vapor deposition, continuous ion layer adsorption and reaction, anodic oxidation, electrolytic deposition, and co-precipitation. Physical methods include, but are not limited to, physical deposition and solution methods. Physical deposition methods include, but are not limited to, one or more of thermal evaporation deposition, electron beam evaporation deposition, magnetron sputtering, multi-arc ion deposition, physical vapor deposition, atomic layer deposition, and pulsed laser deposition. Solution methods include, but are not limited to, one or more of spin coating, printing, inkjet printing, blade coating, dip coating, immersion coating, spray coating, roller coating, casting, slot coating, and strip coating. It should be noted that when the first auxiliary layer or the second auxiliary layer is prepared by solution method, a drying process can be added after the step of depositing the first organic compound or the step of depositing the second organic compound to form a cured film. The drying process includes, but is not limited to, heat treatment and / or vacuum drying.

[0106] In some embodiments of this application, the boiling point of the first organic compound is no greater than 200°C, for example, 150°C to 200°C. The step of depositing the first organic compound includes: heating and evaporating the first organic compound to form a first saturated gas, and adsorbing and depositing the first saturated gas to form a first film layer. Using a principle similar to atomic layer deposition, the first organic compound is heated and evaporated to form a first saturated gas. Based on the self-limiting adsorption effect, the first saturated gas is rapidly adsorbed onto the substrate. As the adsorption time increases, gas molecules form an ultrathin, dense layer on the substrate, with a thickness of, for example, 1 nm to 3 nm. Subsequently, excess first saturated gas will not continue to be adsorbed, which is beneficial for controlling the thickness of the first auxiliary layer and can negligibly address the minute series resistance generated by the first auxiliary layer, thereby facilitating the control of the voltage of the optoelectronic device. It should be noted that if a solution method is used to prepare the first auxiliary layer, the thickness of the first auxiliary layer may not be controllable within 1 nm to 3 nm, and there may be problems with uneven film thickness.

[0107] Furthermore, the molecular weight of the first organic compound is preferably no higher than 250, enabling it to evaporate at a relatively low temperature (e.g., no higher than 200°C) under normal pressure to form a first saturated gas. The evaporation temperature will not exceed the annealing temperature of other functional layers in the optoelectronic device, thus avoiding negative impacts on the state and performance of other functional layers. Moreover, this type of first organic compound is chemically stable and does not readily react with materials or raw materials used in the preparation of other functional layers. In addition, this type of first organic compound is a small-molecule organic compound with a relatively mild phase transition condition. The formed first saturated gas can be adsorbed onto the substrate to form a dense monolayer, and the adsorption is strong, making it less susceptible to damage from scouring by the upper solution, resulting in high performance stability of the first auxiliary layer.

[0108] It should be noted that when the molecular weight of the first organic compound is greater than 250, the phase transition conditions of the first organic compound are more stringent, making it difficult to convert it into a gas to form a film. Even if a film is formed, the adsorption capacity will decrease, resulting in a reduction in film quality. Such first organic compounds are more suitable for film formation by other methods, such as solution methods.

[0109] In some embodiments of this application, the first saturated gas adsorption deposition time is 30s to 60s, for example, 30s, 40s, 50s, 60s or any two of the aforementioned values, and the thickness of the first film layer is 1nm to 3nm, for example, 1nm, 2nm, 3nm or any two of the aforementioned values, which is beneficial for controlling the thickness of the first auxiliary layer and the film formation quality.

[0110] Similarly, in some embodiments of this application, the boiling point of the second organic compound is not greater than 200°C, and for example, it is between 150°C and 200°C. The step of depositing the second organic compound includes: heating and evaporating the second organic compound to form a second saturated gas, and then adsorbing and depositing the second saturated gas to form a second film layer. Preferably, the molecular weight of the second organic compound is not higher than 250.

[0111] In some embodiments of this application, the second saturated gas adsorption deposition time is 30s to 60s, for example, 30s, 40s, 50s, 60s or any two of the aforementioned values, and the thickness of the second film layer is 1nm to 3nm, for example, 1nm, 2nm, 3nm or any two of the aforementioned values, which is beneficial for controlling the thickness of the second auxiliary layer and the film formation quality.

[0112] To avoid excessive first saturated gas and / or excessive second saturated gas negatively impacting the performance of other functional layers, in some embodiments of this application, after the step of forming the first film layer and before the step of obtaining the first auxiliary layer, the method for fabricating the optoelectronic device further includes the step of: performing a first atmosphere treatment with a first inert gas to blow away excess first saturated gas; and / or, after the step of forming the second film layer and before the step of obtaining the second auxiliary layer, the method for fabricating the optoelectronic device further includes the step of: performing a second atmosphere treatment with a second inert gas on the second film layer to blow away excess second saturated gas. The first inert gas and the second inert gas are, for example, independently selected from one or more of nitrogen, helium, neon, argon, krypton, and xenon.

[0113] The time for the first atmosphere treatment and the second atmosphere treatment is not specifically limited and can be selected according to actual needs. For example, the time for the first atmosphere treatment and the second atmosphere treatment can be independently selected from 10s, 30s, 1min, 5min, 10min or any two of the aforementioned values.

[0114] It should be noted that, apart from the first or second auxiliary layer, the fabrication methods for other functional layers in the optoelectronic device include, but are not limited to, the aforementioned chemical and / or physical methods. After the various functional layers of the optoelectronic device are fabricated, an encapsulation process is required. Encapsulation can be performed using common machine encapsulation or manual encapsulation. In the encapsulation environment, the oxygen and water content are both below 0.1 ppm to ensure the stability of the optoelectronic device. Specifically, the encapsulation material used to form the encapsulation layer is selected from one or more of ultraviolet adhesive, metal thin film, and glass adhesive. As an example, the encapsulation material is acrylic resin or epoxy resin.

[0115] This application also provides a display device, which includes a display panel. The display panel includes a plurality of pixel units arranged in an array. Each pixel unit independently includes an optoelectronic device as described above, or an optoelectronic device prepared by the method described above. The display device can be any electronic product with display function, including but not limited to smartphones, tablet personal computers, mobile phones, video phones, e-book readers, laptop PCs, netbook computers, workstations, servers, personal digital assistants, portable multimedia players, MP3 players, mobile medical devices, cameras, game consoles, digital cameras, car navigation systems, electronic billboards, ATMs, smart bracelets, smartwatches, virtual reality (VR) devices, or wearable devices.

[0116] The technical solutions and effects of this application will be described in detail below through specific embodiments, comparative examples and experimental examples. The following embodiments are only some embodiments of this application and are not intended to limit this application.

[0117] Example 1

[0118] This embodiment provides an optoelectronic device and its fabrication method. The optoelectronic device is a quantum dot light-emitting diode with a positive-position structure, such as... Figure 3 As shown, the optoelectronic device includes an anode 101, a hole functional layer 102, a first auxiliary layer 106, an active layer 103, a second auxiliary layer 107, an electronic functional layer 104, and a cathode 105, which are stacked sequentially. The active layer 103 is the light-emitting layer. The hole functional layer 102 includes a hole injection layer 1021 and a hole transport layer 1022, which are stacked together. The hole injection layer 1021 is closer to the anode 101 than the hole transport layer 1022. The electronic functional layer 104 is a single-layer structure. The light-emitting area of ​​the optoelectronic device 10 is 3.14 mm². 2 .

[0119] The materials and thicknesses of each layer in optoelectronic device 10 are as follows:

[0120] The anode 101 is made of ITO and has a thickness of 110 nm.

[0121] The cathode 105 is made of Ag and has a thickness of 100 nm.

[0122] The hole injection layer 1021 is made of PEDOT:PSS and has a thickness of 32nm.

[0123] The hole transport layer 1022 is made of TFB material and has a thickness of 27 nm.

[0124] The material of the first auxiliary layer 106 includes compound M1 (CAS number 999-97-3), and the thickness of the first auxiliary layer 106 is 1.2 nm;

[0125] The active layer 103 is made of CdSe / ZnS quantum dots, emits green light at a wavelength of 544 nm, and has a thickness of 12 nm.

[0126] The material of the second auxiliary layer 107 includes compound M1, and the thickness of the second auxiliary layer 107 is 1.2 nm;

[0127] The material of electronic functional layer 104 includes nano-Zn 0.85 Mg 0.15 O (average particle size is 5nm), and the thickness of the electronic functional layer 104 is 37nm.

[0128] The method for fabricating the optoelectronic device in this embodiment includes the following steps:

[0129] S1.1 Provide a substrate, sputter ITO on one side of the substrate to obtain an ITO layer, wipe the surface of the ITO layer with a small amount of soapy water using a cotton swab to remove visible impurities, and then sequentially ultrasonically clean the substrate containing ITO with deionized water for 15 min, acetone for 15 min, ethanol for 15 min, and isopropanol for 15 min. After drying, perform ultraviolet-ozone surface treatment for 20 min to obtain a substrate containing an anode.

[0130] S1.2 Under normal temperature and pressure air environment, spin-coat PEDOT:PSS aqueous solution on the side of the anode away from the substrate, and then place it in a constant temperature heat treatment at 150℃ for 20 min to obtain hole injection layer.

[0131] S1.3 Under normal temperature and pressure nitrogen atmosphere, spin-coat TFB solution on the side of hole injection layer away from anode. The solvent of TFB solution is chlorobenzene and the concentration of TFB in TFB solution is 6 mg / mL. Then place it in a nitrogen atmosphere at 150℃ for constant temperature heat treatment for 30 min to obtain hole transport layer.

[0132] S1.4 Place the stacked structure obtained after completing step S1.3 into a sealed container containing droplet-shaped compound M1, heat the container at 125°C to make compound M1 evaporate to form a first saturated gas, the first saturated gas is adsorbed and deposited on the side of the hole transport layer away from the hole injection layer, the heating treatment time is 40s, and then nitrogen is used to blow away the excess first saturated gas to obtain the first auxiliary layer.

[0133] S1.5 Under a nitrogen atmosphere at room temperature and pressure, a quantum dot solution is spin-coated on the side of the first auxiliary layer away from the hole transport layer. The solvent of the quantum dot solution is n-octane, and the concentration of CdSe / ZnS quantum dots in the quantum dot solution is 25 mg / mL. Then, it is placed under a nitrogen atmosphere at 130°C for 5 min to obtain the light-emitting layer.

[0134] S1.6. The stacked structure obtained after completing step S1.5 is placed in a sealed container of droplet-shaped compound M1. The container is heated to 125°C to make compound M1 evaporate and form a second saturated gas. The second saturated gas is adsorbed and deposited on the side of the light-emitting layer away from the first auxiliary layer. The heating treatment time is 40s. Then, nitrogen is used to blow away the excess second saturated gas to obtain the second auxiliary layer.

[0135] S1.7 Under a nitrogen atmosphere at room temperature and pressure, spin-coat nano-Zn onto the side of the second auxiliary layer furthest from the light-emitting layer. 0.85 Mg 0.15 O solution, nano Zn 0.85 Mg 0.15 Nano Zn in O solution 0.85 Mg 0.15 The concentration of O is 30 mg / mL, and the nano-Zn 0.85 Mg 0.15 The solvent for the O solution was ethanol, and then it was subjected to constant temperature heat treatment at 80°C under a nitrogen atmosphere for 10 min to obtain the electronic functional layer.

[0136] S1.8. Place the laminated structure obtained after completing step S1.7 in a vacuum with a vacuum level not exceeding 3 × 10⁻⁶. -4 In the vapor deposition chamber of Pa, Ag is thermally vaporized on the side of the electronic functional layer away from the second auxiliary layer through a mask to obtain the cathode, and then encapsulated with acrylic resin to obtain the optoelectronic device.

[0137] Example 2

[0138] This embodiment provides an optoelectronic device and its preparation method. Compared with the optoelectronic device in Embodiment 1, the main difference of the optoelectronic device in this embodiment is that "compound M1" in the first auxiliary layer is replaced with "compound M2 (CAS number 15933-59-2)" and "compound M1" in the second auxiliary layer is replaced with "compound M2".

[0139] Compared to the method for fabricating optoelectronic devices in Example 1, the main difference in the method for fabricating optoelectronic devices in this example is that step S1.4 is replaced with "the stacked structure obtained after completing step S1.3 is placed in a sealed container containing droplet-shaped compound M2, the container is heated to 100°C to allow compound M2 to evaporate and form a first saturated gas, the first saturated gas is adsorbed and deposited on the side of the hole transport layer away from the hole injection layer, the heating time is 40s, and then nitrogen is used to blow away the excess first saturated gas to obtain a first auxiliary layer", and step S1.6 is replaced with "the stacked structure obtained after completing step S1.5 is placed in a sealed container containing droplet-shaped compound M2, the container is heated to 100°C to allow compound M2 to evaporate and form a second saturated gas, the second saturated gas is adsorbed and deposited on the side of the light-emitting layer away from the first auxiliary layer, the heating time is 40s, and then nitrogen is used to blow away the excess second saturated gas to obtain a second auxiliary layer".

[0140] Example 3

[0141] This embodiment provides an optoelectronic device and its preparation method. Compared with the optoelectronic device in Embodiment 1, the main difference of the optoelectronic device in this embodiment is that "compound M1" in the first auxiliary layer is replaced with "compound M3 (CAS number 17882-94-9)" and "compound M1" in the second auxiliary layer is replaced with "compound M3".

[0142] Compared to the method for fabricating optoelectronic devices in Example 1, the main difference in the method for fabricating optoelectronic devices in this example is that step S1.4 is replaced with "the stacked structure obtained after completing step S1.3 is placed in a sealed container containing droplet-shaped compound M3, the container is heated to 93°C to cause compound M3 to evaporate and form a first saturated gas, the first saturated gas is adsorbed and deposited on the side of the hole transport layer away from the hole injection layer, the heating time is 40s, and then the excess first saturated gas is blown away with nitrogen to obtain a first auxiliary layer", and step S1.6 is replaced with "the stacked structure obtained after completing step S1.5 is placed in a sealed container containing droplet-shaped compound M3, the container is heated to 93°C to cause compound M3 to evaporate and form a second saturated gas, the second saturated gas is adsorbed and deposited on the side of the light-emitting layer away from the first auxiliary layer, the heating time is 40s, and then the excess second saturated gas is blown away with nitrogen to obtain a second auxiliary layer".

[0143] Example 4

[0144] This embodiment provides an optoelectronic device and its preparation method. Compared with the optoelectronic device in Embodiment 1, the main difference of the optoelectronic device in this embodiment is that "compound M1" in the first auxiliary layer is replaced with "compound M4 (CAS number 920-68-3)" and "compound M1" in the second auxiliary layer is replaced with "compound M4".

[0145] Compared to the method for fabricating optoelectronic devices in Example 1, the main difference in the method for fabricating optoelectronic devices in this example is that step S1.4 is replaced with "the stacked structure obtained after completing step S1.3 is placed in a sealed container containing droplet-shaped compound M4, the container is heated to 150°C to allow compound M4 to evaporate and form a first saturated gas, the first saturated gas is adsorbed and deposited on the side of the hole transport layer away from the hole injection layer, the heating time is 40s, and then nitrogen is used to blow away the excess first saturated gas to obtain a first auxiliary layer", and step S1.6 is replaced with "the stacked structure obtained after completing step S1.5 is placed in a sealed container containing droplet-shaped compound M4, the container is heated to 150°C to allow compound M4 to evaporate and form a second saturated gas, the second saturated gas is adsorbed and deposited on the side of the light-emitting layer away from the first auxiliary layer, the heating time is 40s, and then nitrogen is used to blow away the excess second saturated gas to obtain a second auxiliary layer".

[0146] Example 5

[0147] This embodiment provides an optoelectronic device and its preparation method. Compared with the optoelectronic device in Embodiment 1, the main difference of the optoelectronic device in this embodiment is that "compound M1" in the first auxiliary layer is replaced with "compound M5 (CAS number 7266-76-4)" and "compound M1" in the second auxiliary layer is replaced with "compound M5".

[0148] Compared to the method for fabricating optoelectronic devices in Example 1, the main difference in the method for fabricating optoelectronic devices in this example is that step S1.4 is replaced with "the stacked structure obtained after completing step S1.3 is placed in a sealed container containing droplet-shaped compound M5, the gas pressure inside the container is controlled at 27 Tor, and the container is heated at 35°C to make compound M5 evaporate to form a first saturated gas. The first saturated gas is adsorbed and deposited on the side of the hole transport layer away from the hole injection layer. The heating time is 40s, and then nitrogen is used to blow away the excess first saturated gas to obtain a first auxiliary layer", and step S1.6 is replaced with "the stacked structure obtained after completing step S1.5 is placed in a sealed container containing droplet-shaped compound M5, the gas pressure inside the container is controlled at 27 Tor, and the container is heated at 35°C to make compound M5 evaporate to form a second saturated gas. The second saturated gas is adsorbed and deposited on the side of the hole transport layer away from the hole injection layer. The heating time is 40s, and then nitrogen is used to blow away the excess second saturated gas to obtain a second auxiliary layer".

[0149] Example 6

[0150] This embodiment provides an optoelectronic device and its preparation method. Compared with the optoelectronic device in Embodiment 1, the main difference of the optoelectronic device in this embodiment is that "compound M1" in the first auxiliary layer is replaced with "compound M7 (CAS number 10416-59-8)" and "compound M1" in the second auxiliary layer is replaced with "compound M7".

[0151] Compared to the method for fabricating optoelectronic devices in Example 1, the main difference in the method for fabricating optoelectronic devices in this example is that step S1.4 is replaced with "the stacked structure obtained after completing step S1.3 is placed in a sealed container containing droplet-shaped compound M7, the gas pressure inside the container is controlled at 35 Tor, and the container is heated at 75°C to make compound M7 evaporate to form a first saturated gas. The first saturated gas is adsorbed and deposited on the side of the hole transport layer away from the hole injection layer. The heating time is 40 seconds. Then, nitrogen is used to blow away the excess first saturated gas to obtain a first auxiliary layer." and step S1.6 is replaced with "the stacked structure obtained after completing step S1.5 is placed in a sealed container containing droplet-shaped compound M7, the gas pressure inside the container is controlled at 35 Tor, and the container is heated at 75°C to make compound M7 evaporate to form a second saturated gas. The second saturated gas is adsorbed and deposited on the side of the hole transport layer away from the hole injection layer. The heating time is 40 seconds. Then, nitrogen is used to blow away the excess second saturated gas to obtain a second auxiliary layer."

[0152] Example 7

[0153] This embodiment provides an optoelectronic device and its fabrication method. Compared with the optoelectronic device in Embodiment 1, the main difference of the optoelectronic device in this embodiment is that: Figure 2 As shown, the first auxiliary layer is omitted.

[0154] Compared with the method for fabricating optoelectronic devices in Example 1, the main difference in the method for fabricating optoelectronic devices in this example is that step S1.4 is omitted, and the descriptions of other steps are modified accordingly.

[0155] Example 8

[0156] This embodiment provides an optoelectronic device and its fabrication method. Compared with the optoelectronic device in Embodiment 1, the main difference of the optoelectronic device in this embodiment is that: Figure 2 As shown, the first auxiliary layer is omitted, and "compound M1" in the second auxiliary layer is replaced with "compound M2".

[0157] Compared with the method for fabricating optoelectronic devices in Example 1, the main difference in the method for fabricating optoelectronic devices in this example is that step S1.4 is omitted, the method for fabricating the second auxiliary layer is the same as the method for fabricating the second auxiliary layer in Example 2, and the descriptions of other steps are modified accordingly.

[0158] Example 9

[0159] This embodiment provides an optoelectronic device and its fabrication method. Compared with the optoelectronic device in Embodiment 1, the main difference of the optoelectronic device in this embodiment is that: Figure 2 As shown, the first auxiliary layer is omitted, and "compound M1" in the second auxiliary layer is replaced with "compound M3".

[0160] Compared with the method for fabricating optoelectronic devices in Example 1, the main difference in the method for fabricating optoelectronic devices in this example is that step S1.4 is omitted, the method for fabricating the second auxiliary layer is the same as the method for fabricating the second auxiliary layer in Example 3, and the descriptions of other steps are modified accordingly.

[0161] Example 10

[0162] This embodiment provides an optoelectronic device and its fabrication method. Compared with the optoelectronic device in Embodiment 1, the main difference of the optoelectronic device in this embodiment is that: Figure 1 As shown, the second auxiliary layer is omitted, and "compound M1" in the first auxiliary layer is replaced with "compound M4".

[0163] Compared with the method for fabricating optoelectronic devices in Example 1, the main difference in the method for fabricating optoelectronic devices in this example is that step S1.6 is omitted, the method for fabricating the first auxiliary layer is the same as the method for fabricating the first auxiliary layer in Example 4, and the descriptions of other steps are modified accordingly.

[0164] Example 11

[0165] This embodiment provides an optoelectronic device and its fabrication method. Compared with the optoelectronic device in Embodiment 1, the main difference of the optoelectronic device in this embodiment is that: Figure 1 As shown, the second auxiliary layer is omitted, and "compound M1" in the first auxiliary layer is replaced with "compound M5".

[0166] Compared with the method for fabricating optoelectronic devices in Example 1, the main difference in the method for fabricating optoelectronic devices in this example is that step S1.6 is omitted, the method for fabricating the first auxiliary layer is the same as the method for fabricating the first auxiliary layer in Example 5, and the descriptions of other steps are modified accordingly.

[0167] Example 12

[0168] This embodiment provides an optoelectronic device and its fabrication method. Compared with the optoelectronic device in Embodiment 1, the main difference of the optoelectronic device in this embodiment is that: Figure 1 As shown, the second auxiliary layer is omitted, and "compound M1" in the first auxiliary layer is replaced with "compound M7".

[0169] Compared with the method for fabricating optoelectronic devices in Example 1, the main difference in the method for fabricating optoelectronic devices in this example is that step S1.6 is omitted, the method for fabricating the first auxiliary layer is the same as the method for fabricating the first auxiliary layer in Example 6, and the descriptions of other steps are modified accordingly.

[0170] Example 13

[0171] This embodiment provides an optoelectronic device and its fabrication method. Compared with the optoelectronic device in Embodiment 1, the main difference of the optoelectronic device in this embodiment is that: Figure 1 As shown, the second auxiliary layer is omitted, and "compound M1" in the first auxiliary layer is replaced with "compound with CAS number 49539-93-7".

[0172] Compared with the method for fabricating optoelectronic devices in Example 1, the main difference in the method for fabricating optoelectronic devices in this example is that step S1.6 is omitted, and step S1.4 is replaced with "the stacked structure obtained after completing step S1.3 is placed in a sealed container containing a droplet-shaped compound with CAS number 49539-93-7, the gas pressure inside the container is controlled at 13 Tor, and the container is heated at 76°C to make the compound evaporate to form a first saturated gas. The first saturated gas is adsorbed and deposited on the side of the hole transport layer away from the hole injection layer. The heating treatment time is 2 minutes, and then nitrogen is used to blow away the excess first saturated gas to obtain the first auxiliary layer."

[0173] Example 14

[0174] This embodiment provides an optoelectronic device and its fabrication method. Compared with the optoelectronic device in Embodiment 1, the main difference of the optoelectronic device in this embodiment is that: Figure 1 As shown, the second auxiliary layer is omitted.

[0175] Compared with the method for fabricating optoelectronic devices in Example 1, the main difference in the method for fabricating optoelectronic devices in this example is that step S1.6 is omitted, and the descriptions of other steps are modified accordingly.

[0176] Example 15

[0177] This embodiment provides an optoelectronic device and its fabrication method. Compared with the optoelectronic device in Embodiment 1, the main difference of the optoelectronic device in this embodiment is that: Figure 1 As shown, the second auxiliary layer is omitted, and the thickness of the first auxiliary layer is 22nm.

[0178] Compared with the method for preparing the optoelectronic device in Example 1, the main difference in the method for preparing the optoelectronic device in this example is that step S1.6 is omitted, and step S1.4 is replaced with "In a nitrogen atmosphere at room temperature and pressure, compound M1 is spin-coated on the side of the hole transport layer away from the hole injection layer, and then placed in a nitrogen atmosphere at 100°C for constant temperature heat treatment for 20 minutes to obtain the first auxiliary layer".

[0179] Comparative Example 1

[0180] This comparative example provides an optoelectronic device and its fabrication method. Compared with the optoelectronic device in Example 1, the main difference of the optoelectronic device in this comparative example is: Figure 4 As shown, the first and second auxiliary layers are omitted.

[0181] Compared with the method for preparing optoelectronic devices in Example 1, the main difference in the method for preparing optoelectronic devices in this comparative example is that steps S1.4 and S1.6 are omitted, and the descriptions of other steps are adapted accordingly.

[0182] Comparative Example 2

[0183] This comparative example provides an optoelectronic device and its fabrication method. Compared with the optoelectronic device in Example 1, the main difference of the optoelectronic device in this comparative example is: Figure 1 As shown, the second auxiliary layer is omitted, and "compound M1" in the first auxiliary layer is replaced with "vinyl polysilazane (CAS number 503590-70-3)". The thickness of the first auxiliary layer is 32nm.

[0184] Compared with the method for preparing the optoelectronic device in Example 1, the main difference in the method for preparing the optoelectronic device in this comparative example is that step S1.6 is omitted, and step S1.4 is replaced with "In a nitrogen atmosphere at room temperature and pressure, a dispersion of vinyl polysilazane is spin-coated on the side of the hole transport layer away from the hole injection layer. The dispersion medium of the dispersion is benzene, and the concentration of vinyl polysilazane in the dispersion is 6.5 mg / mL. Then, it is placed in a nitrogen atmosphere at 150°C for constant temperature heat treatment for 30 min to obtain the first auxiliary layer."

[0185] Comparative Example 3

[0186] This comparative example provides an optoelectronic device and its fabrication method. Compared with the optoelectronic device in Example 1, the main difference of the optoelectronic device in this comparative example is: Figure 1 As shown, the second auxiliary layer is omitted, and "compound M1" in the first auxiliary layer is replaced with "tetraethoxysilane (CAS number 78-10-4)". The thickness of the first auxiliary layer is 24 nm.

[0187] Compared with the method for fabricating optoelectronic devices in Example 1, the main difference in the method for fabricating optoelectronic devices in this comparative example is that step S1.6 is omitted, and step S1.4 is replaced with "In a nitrogen atmosphere at room temperature and pressure, tetraethoxysilane is spin-coated on the side of the hole transport layer away from the hole injection layer, and then placed in a nitrogen atmosphere at 70°C for constant temperature heat treatment for 30 minutes to obtain the first auxiliary layer".

[0188] Comparative Example 4

[0189] This comparative example provides an optoelectronic device and its fabrication method. Compared with the optoelectronic device in Example 1, the main difference of the optoelectronic device in this comparative example is: Figure 2 As shown, the first auxiliary layer is omitted, and "compound M1" in the second auxiliary layer is replaced with "tetraethoxysilane (CAS number 78-10-4)". The thickness of the first auxiliary layer is 24 nm.

[0190] Compared with the method for preparing the optoelectronic device in Example 1, the main difference in the method for preparing the optoelectronic device in this comparative example is that step S1.4 is omitted, and step S1.6 is replaced with "in a nitrogen atmosphere at room temperature and pressure, tetraethoxysilane is spin-coated on the side of the light-emitting layer away from the hole transport layer, and then placed in a nitrogen atmosphere at 70°C for constant temperature heat treatment for 30 minutes to obtain the second auxiliary layer".

[0191] Experimental Example

[0192] The performance of the optoelectronic devices in Examples 1 to 15 and Comparative Examples 1 to 4 after 1 hour of encapsulation was tested. The performance tests were conducted in an environment with a temperature of 25°C and a relative humidity of 40%.

[0193] The photoelectric performance was tested using a Fostar FPD optical characteristic measurement system (comprising a Marine Optics USB2000, a LabVIEW-controlled QE-PRO spectrometer, a Keithley 2400, a high-precision digital source meter Keithley 6485, a 50μm inner diameter optical fiber, device test probes and fixtures, various connecting cables and data cards, an efficiency test cassette, and a data acquisition system). The turn-on voltage (Ub) of each photoelectric device was obtained. T The parameters such as current, brightness, and emission spectrum are obtained, and then key parameters such as external quantum efficiency and power efficiency are calculated.

[0194] The method for detecting current efficiency includes the following steps: setting the luminous area to 3.14 mm². 2 The brightness values ​​of the optoelectronic device were intermittently collected within a voltage range of 0V to 8V, with a collection every 0.2V. The current efficiency of the optoelectronic device under that collection condition was obtained by dividing the brightness value collected each time by the corresponding current density. The maximum current efficiency (CE) was then obtained. max ,cd / A).

[0195] The device lifetime testing method includes the following steps: Under constant current (2mA) driving, electroluminescence lifetime analysis is performed on each optoelectronic device using lifetime testing equipment. The time (T95,h) required for each optoelectronic device to decay from its maximum brightness to 95% is recorded. Then, the device lifetime (T95@1000nit,h) at a brightness of 1000nit is obtained through the extended exponential decay brightness decay fitting formula. The specific calculation formula is as follows:

[0196]

[0197] Among them, T95 L For longer lifespan at low brightness, T95 H For the measured lifetime under high brightness, L HTo accelerate the device to its maximum brightness, L L It is 1000 nits, and A is the acceleration factor with a value of 1.7.

[0198] The method for testing the stability of optoelectronic devices includes the following steps: obtaining the current efficiency (CE) according to the aforementioned current efficiency testing method. max As the initial current efficiency of each optoelectronic device, each optoelectronic device was then placed in a dark environment at room temperature for seven days. The maximum current efficiency C.E1 of each optoelectronic device after seven days was then obtained using the aforementioned current efficiency detection method, and the attenuation rate was calculated (the formula is 100% - C.E1 / CE). max ×100%, take the absolute value of the aforementioned calculation result.

[0199] The performance test results of each optoelectronic device are shown in Table 1 below:

[0200] Table 1

[0201]

[0202]

[0203] As shown in Table 1, compared with the optoelectronic devices in Comparative Examples 1 to 4, the optoelectronic devices in Examples 1 to 15 exhibit superior overall performance. Specifically, the optoelectronic devices in Examples 1 to 15 have lower voltage, higher device lifetime and efficiency, and better performance stability. This demonstrates that adding a first auxiliary layer between the hole functional layer and the active layer, wherein the material of the first auxiliary layer comprises a non-polymer first organic compound containing at least one silicon-nitrogen bond; and / or adding a second auxiliary layer between the electron functional layer and the active layer, wherein the material of the second auxiliary layer comprises a non-polymer second organic compound containing at least one silicon-nitrogen bond, can reduce the damage of excess electrons to the active layer and / or the hole functional layer, improve the quenching phenomenon of quantum dots, and increase the injection and recombination efficiency of charge carriers, thereby improving the device efficiency, device lifetime, and storage performance stability of the optoelectronic device.

[0204] The poor overall performance of the optoelectronic device in Comparative Example 1 is due to the following reasons: excess electrons have a destructive effect on the active layer and / or hole functional layer, exhibiting significant quantum dot quenching and a high nonradiative recombination rate. The poor overall performance of the optoelectronic device in Comparative Example 2 is due to the use of a polymer as the first auxiliary layer. Polymers have poor conductivity, which significantly increases the voltage of the optoelectronic device, leading to excessive carrier accumulation at the interface between the hole functional layer and the active layer. This negatively impacts hole injection and / or transport. Furthermore, the first auxiliary layer is often formed using a solution method, resulting in poor film quality and a thicker film. The poor overall performance of the optoelectronic devices in Comparative Examples 3 and 4 is due to the use of tetraethoxysilane as the first or second auxiliary layer. Tetraethoxysilane has lower high-temperature and chemical stability than the first or second organic compound, thus limiting its improvement on the overall performance of the optoelectronic device.

[0205] The foregoing has provided a detailed description of an optoelectronic device, a method for fabricating the optoelectronic device, and a display device according to the embodiments of this application. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the embodiments above are only for the purpose of helping to understand the technical solutions and core ideas of this application. Those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. An optoelectronic device, characterized in that, The optoelectronic device includes an anode, a hole functional layer, an active layer, and an electron functional layer stacked sequentially; the optoelectronic device also includes: A first auxiliary layer is disposed between the hole functional layer and the active layer. The material of the first auxiliary layer includes a first organic compound with a molecular weight of 100-2000 and containing at least one silicon-nitrogen bond; and / or A second auxiliary layer is disposed between the electronic functional layer and the active layer. The material of the second auxiliary layer includes a second organic compound with a molecular weight of 100 to 2000 and containing at least one silicon-nitrogen bond.

2. The optoelectronic device according to claim 1, characterized in that, At least one of the following conditions must be met: (1) The thickness of the first auxiliary layer is 1 nm to 3 nm, and / or the thickness of the second auxiliary layer is 1 nm to 3 nm; (2) The first organic compound and the second organic compound each independently comprise the first compound with the structure shown in general formula (I) and / or the second compound with the structure shown in general formula (II): In general formulas (I) and (II), R1, R2, R3, R4, R5, R6, R7, and R8 are each independently selected from -H, -D, unsubstituted or substituted with at least one R C1-C30 aliphatic chain hydrocarbon group, unsubstituted or substituted with at least one R C1-C30 aliphatic chain hydroxyl group, unsubstituted or substituted with at least one R aliphatic cyclic hydrocarbon group with 3 to 30 ring atoms, unsubstituted or substituted with at least one R aliphatic heterocyclic hydrocarbon group with 3 to 30 ring atoms, and unsubstituted or substituted with at least one R aryl group with 6 to 30 ring atoms. Unsubstituted aryloxy groups having 6 to 30 ring atoms or substituted with at least one R; unsubstituted arylthio groups having 6 to 30 ring atoms or substituted with at least one R; unsubstituted arylamino groups having 6 to 30 ring atoms or substituted with at least one R; unsubstituted heteroaryl groups having 5 to 30 ring atoms or substituted with at least one R; unsubstituted heteroaryloxy groups having 5 to 30 ring atoms or substituted with at least one R; unsubstituted heteroarylthio groups having 5 to 30 ring atoms or substituted with at least one R; unsubstituted heteroarylamino groups having 5 to 30 ring atoms or substituted with at least one R. Or a combination of these groups; In general formula (II), each occurrence of R9 is independently selected from unsubstituted or substituted with at least one R aliphatic subchain hydrocarbon group of C1 to C30, unsubstituted or substituted with at least one R aliphatic subchain hydroxyl group of C1 to C30, unsubstituted or substituted with at least one R aliphatic subcyclic hydrocarbon group of 3 to 30 ring atoms, unsubstituted or substituted with at least one R aliphatic heterocyclic hydrocarbon group of 3 to 30 ring atoms, unsubstituted or substituted with at least one R aryl group of 6 to 30 ring atoms, and unsubstituted or substituted with at least one R ring atoms. The following are considered as a group of compounds: aryloxy groups having 6 to 30 ring atoms; unsubstituted or substituted with at least one R ring atoms having 6 to 30 ring atoms; unsubstituted or substituted with at least one R ring atoms having 6 to 30 ring atoms; unsubstituted or substituted with at least one R ring atoms having 5 to 30 ring atoms; unsubstituted or substituted with at least one R ring atoms having 5 to 30 ring atoms; unsubstituted or substituted with at least one R ring atoms having 5 to 30 ring atoms; unsubstituted or substituted with at least one R ring atoms having 5 to 30 ring atoms; Or a combination of these groups; R 10 R 11 R 12 Each occurrence is independently selected from -H, -D, unsubstituted or substituted with at least one R C1-C30 aliphatic chain hydrocarbon group, unsubstituted or substituted with at least one R C1-C30 aliphatic chain hydroxyl group, unsubstituted or substituted with at least one R aliphatic cyclic hydrocarbon group having 3 to 30 ring atoms, unsubstituted or substituted with at least one R aliphatic heterocyclic hydrocarbon group having 3 to 30 ring atoms, unsubstituted or substituted with at least one R aryl group having 6 to 30 ring atoms, and unsubstituted or substituted with at least one R aliphatic heterocyclic hydrocarbon group having 6 to 30 ring atoms. The following groups are included: 0 aryloxy group, unsubstituted or substituted with at least one R ring number of 6 to 30 arylthio group, unsubstituted or substituted with at least one R ring number of 6 to 30 arylamino group, unsubstituted or substituted with at least one R ring number of 5 to 30 heteroaryl group, unsubstituted or substituted with at least one R ring number of 5 to 30 heteroaryloxy group, unsubstituted or substituted with at least one R ring number of 5 to 30 heteroarylthio group, unsubstituted or substituted with at least one R ring number of 5 to 30 heteroarylamino group, or combinations thereof; Each time R appears, it is independently selected from -D, aliphatic chain hydrocarbon group of C1 to C20, aliphatic chain alkyloxy group of C1 to C20, aliphatic cyclic hydrocarbon group with 3 to 20 ring atoms, aliphatic heterocyclic hydrocarbon group with 3 to 20 ring atoms, aryl group with 6 to 20 ring atoms, aryloxy group with 6 to 20 ring atoms, arylthio group with 6 to 20 ring atoms, arylamino group with 6 to 20 ring atoms, heteroaryl group with 5 to 20 ring atoms, heteroaryloxy group with 5 to 20 ring atoms, heteroarylthio group with 5 to 20 ring atoms, heteroarylamino group with 5 to 20 ring atoms, and *-NR. a R b Halogen groups, hydroxyl groups, carboxyl groups, nitro groups, sulfonic acid groups, aldehyde groups, Mercapto, cyano, or combinations of these groups; R a R b R c R d R f and R g Each time it appears, it is independently selected from -H, -D, C1-C20 aliphatic chain hydrocarbon groups, C1-C20 aliphatic chain hydroxyl groups, aliphatic cyclic hydrocarbon groups with 3 to 20 ring atoms, aliphatic heterocyclic hydrocarbon groups with 3 to 20 ring atoms, aryl groups with 6 to 20 ring atoms, heteroaryl groups with 5 to 20 ring atoms, or combinations of these groups; R e It is selected from C1 to C20 aliphatic subchain hydrocarbon groups, C1 to C20 aliphatic subchain hydrocarbon oxygen groups, aliphatic subcyclic hydrocarbon groups with 3 to 20 ring atoms, aliphatic heterocyclic hydrocarbon groups with 3 to 20 ring atoms, arylene groups with 6 to 20 ring atoms, heteroarylene groups with 5 to 20 ring atoms, or combinations of these groups.

3. The optoelectronic device according to claim 2, characterized in that, At least one of the following conditions must be met: (1) The molecular weight of the first compound is not higher than 250, and / or the molecular weight of the second compound is not higher than 250; (2) The boiling point of the first organic compound is not greater than 200°C, and / or the boiling point of the second organic compound is not greater than 200°C; Optionally, the boiling point of the first organic compound is 150°C to 200°C, and / or the boiling point of the second organic compound is 150°C to 200°C. (3) In general formulas (I) and (II), R1, R2, R3, R4, R5, R6, R7, and R8 are each independently selected from -H, -D, unsubstituted or substituted with at least one R C1-C10 aliphatic chain hydrocarbon group, unsubstituted or substituted with at least one R C1-C10 aliphatic chain hydroxyl group, unsubstituted or substituted with at least one R aliphatic cyclic hydrocarbon group with 3 to 10 ring atoms, unsubstituted or substituted with at least one R aliphatic heterocyclic hydrocarbon group with 3 to 10 ring atoms, unsubstituted or substituted with at least one R aryl group with 6 to 14 ring atoms, and unsubstituted or substituted with at least one R heteroaryl group with 5 to 14 ring atoms. Or a combination of the aforementioned groups; Each time R9 appears, it is independently selected from unsubstituted or substituted with at least one R C1-C10 aliphatic subchain hydrocarbon group, unsubstituted or substituted with at least one R C1-C10 aliphatic subchain hydroxyl group, unsubstituted or substituted with at least one R aliphatic subcyclic hydrocarbon group having 3 to 10 ring atoms, unsubstituted or substituted with at least one R aliphatic heterocyclic hydrocarbon group having 3 to 10 ring atoms, unsubstituted or substituted with at least one R aryl group having 6 to 14 ring atoms, and unsubstituted or substituted with at least one R heterocyclic hydrocarbon group having 5 to 14 ring atoms. Or a combination of the aforementioned groups; R 10 R 11 R 12 Each time it appears, it is independently selected from -H, -D, unsubstituted or substituted with at least one R C1 to C10 aliphatic chain hydrocarbon group, unsubstituted or substituted with at least one R C1 to C10 aliphatic chain hydroxyl group, unsubstituted or substituted with at least one R aliphatic cyclic hydrocarbon group having 3 to 10 ring atoms, unsubstituted or substituted with at least one R aliphatic heterocyclic hydrocarbon group having 3 to 10 ring atoms, unsubstituted or substituted with at least one R aryl group having 6 to 14 ring atoms, unsubstituted or substituted with at least one R heteroaryl group having 5 to 14 ring atoms, or combinations of these groups; Each time R appears, it is independently -D, an aliphatic chain hydrocarbon group of C1 to C10, an aliphatic chain hydrocarbon oxygen group of C1 to C10, an aliphatic cyclic hydrocarbon group with 3 to 10 ring atoms, an aliphatic heterocyclic hydrocarbon group with 3 to 10 ring atoms, an aryl group with 6 to 10 ring atoms, a heteroaryl group with 5 to 10 ring atoms, or a combination of the aforementioned groups.

4. The optoelectronic device according to claim 2 or 3, characterized in that, It has at least one of the following technical features: (1) The first compound has the structure shown in the general formula (Ⅰ-1): In general formula (Ⅰ-1), R1, R2, R3, R4, R 10 R 11 R 12 Each time it appears, it is independently selected from alkyl groups of C1 to C10, alkenyl groups of C2 to C10, alkynyl groups of C2 to C10, alkoxy groups of C1 to C10, aryl groups with 6 to 14 ring atoms, heteroaryl groups with 5 to 14 ring atoms, or combinations of these groups; Optionally, R1, R2, R3, R4, R 10 R 11 R 12 Each time it appears, it is independently selected from C1-C4 alkyl, C2-C4 alkenyl, C2-C4 alkynyl or C1-C4 alkoxy groups; (2) The second compound has the structure shown in the general formula (Ⅱ-1) below: In general formula (Ⅱ-1), R6 to R8, R 10 To R 12 Each time it appears, it is independently selected from alkyl groups of C1 to C10, alkenyl groups of C2 to C10, alkynyl groups of C2 to C10, alkoxy groups of C1 to C10, aryl groups with 6 to 14 ring atoms, heteroaryl groups with 5 to 14 ring atoms, or combinations of these groups; Optionally, in general formula (Ⅱ-1), R6 to R8, R 10 To R 12 Each time it appears, it is independently selected from C1-C4 alkyl, C2-C4 alkenyl, C2-C4 alkynyl or C1-C4 alkoxy groups.

5. The optoelectronic device according to claim 4, characterized in that, It has at least one of the following technical features: (1) In general formula (Ⅰ-1), R1, R2, R3 and R 10 R 11 R 12 Each time it appears, it is independently selected from methyl, ethyl, or a combination of these groups; each time R4 appears, it is independently selected from hydrogen, deuterium, methyl, ethyl, methoxy, ethoxy, vinyl, or a combination of these groups. (2) In general formula (Ⅱ-1), R6, R7, R8 and R 10 R 11 R 12 Each time it appears, it is independently selected from methyl, ethyl, or a combination of these groups, R 13 Each time it appears, it is independently selected from hydrogen, deuterium, methyl, ethyl, methoxy, ethoxy, vinyl, or a combination of these groups; (3) The first organic compound and the second organic compound are each independently selected from one or more of the following compounds:

6. The optoelectronic device according to claim 1 or 2, characterized in that, At least one of the following conditions must be met: (1) The active layer is a light-emitting layer, and the material of the light-emitting layer includes one or more of organic light-emitting materials and quantum dots; the organic light-emitting material is selected from 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridinium(III), 4,4',4”-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridinium, diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, and TBRb fluorescent materials. The quantum dots include one or more of the following: DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed fluorescent materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited-state materials, excitocomplex luminescent materials, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, and polyfluorene and its derivatives; the quantum dots include one or more of the following: single-component quantum dots, core-shell structured quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots, and organic-inorganic hybrid perovskite quantum dots, wherein the core-shell structured quantum dots include one or more... The materials of the single-component quantum dots, the core of the core-shell quantum dots, and the shell of the core-shell quantum dots are each independently selected from at least one of group II-VI compounds, group III-VI compounds, group III-V compounds, group IV-VI compounds, or group I-III-VI compounds, wherein the group II-VI compounds are selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, C dSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZn One or more of Se, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe,The group III-V compounds are selected from one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb, and the group III-VI compounds are selected from one or more of In2S3, In2Se3, InGaS3, and InGaSe3. The group IV-VI compounds are selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The group I-III-VI compounds are selected from AgInS, AgInS2, and CuI. The inorganic perovskite quantum dots are selected from one or more of nS, CuInS2, AgGaS2, CuGaS2, CuGaO2, AgGaO2, AgAlO2, AgInGaS2, and CuInGaS2, with the general structural formula QJT3 for the inorganic perovskite quantum dots, the general structural formula GJT3 for the organic-inorganic hybrid perovskite quantum dots, and the general structural formula LJT3 for the organic perovskite quantum dots. J is a divalent metal cation, and each occurrence of J is independently selected from Pb. 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ and Eu 2+ One or more of them, where T is independently selected from Cl each time it appears. - ,Br - and I - One or more of them, where Q is Cs + G is selected from CH3(CH2). n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ n≥2, L is selected from formamidinyl; (2) The material of the electronic functional layer includes one or more of a first inorganic material and a second inorganic material; the first inorganic material includes one or more of an undoped first metal oxide, a group IIB-VIA semiconductor material, a group IIIA-VA semiconductor material, a group IB-IIIA-VIA semiconductor material, a ZrSiO4, a BaTiO3, a BaZrO3, and a Si3N4, wherein the undoped first metal oxide is selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, and ZrO2, the group IIB-VIA semiconductor material is selected from one or more of ZnS, ZnSe, and CdS, the group IIIA-VA semiconductor material is selected from one or more of InP and GaP, and the group IB-IIIA-VIA semiconductor material is selected from one or more of CuInS and CuGaS; the second inorganic material includes one or more doped third compounds, wherein the general formula of the doped third compound is A (1-x) M x O, where 0 < x ≤ 0.5, A and M are not the same, and A and M are independently selected from one or more of Zn, Ti, Sn, Ba, Ta, Al, Zr, Mg, Ga, Li, Ga, In and Y; Optionally, the doped third compound is selected from Zn. (1-x) Mg x O, Zn (1-x) Ca x O, Zn (1-x) Zr x O, Zn (1-x) Ga x O, Zn (1-x) Al x O, Zn (1-x) Li x O, Al (1-x) Zn x O, Zn (1-x) Ti x O, Zn (1-x) Y x O、In (1-x) Sn x O and Ti (1-x) Li x One or more of O; (3) The material of the hole functional layer includes one or more of organic materials, a third inorganic material, and a fourth inorganic material; the organic material includes poly(3,4-vinyldioxythiophene):poly(styrene sulfonic acid), copper phthalocyanine, titanium phthalocyanine, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene, polypyrrole, polyaniline, 3-hexyl-substituted polythiophene, poly(9-vinylcarbazole), 4,4'-bis(9-carbazole)biphenyl, poly[bis(4-phenyl)(4-butylphenyl)amine], 4,4'-cyclohexylbis[N,N- [Di(4-methylphenyl)aniline], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-di-n-octylfluorenyl-2,7-diyl)], 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4',4”-tris(carbazole-9-yl)triphenylamine, 4,4',4’-tris(2-naphthylphenylamino)triphenylamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4' -Diamine, N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirodifluorene-2,7-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirodi[9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene, N,N,N' The third inorganic material comprises one or more of the following: N'-tetraarylbenzidine, 4,4',4”-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, N,N'-diphenyl-N,N'-di-[4-(N,N-diphenylamino)phenyl]benzidine, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene], and poly[2-methoxy-5-[(3,7-dimethyloctyloxy)-1,4-phenyl]-1,2-vinyldiyl]; the third inorganic material comprises one or more of the following: graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, hafnium oxide, copper sulfide, molybdenum sulfide, and tungsten sulfide.The fourth inorganic material includes one or more doped fourth compounds, the main compound of which includes graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, hafnium oxide, copper sulfide, molybdenum sulfide, or tungsten sulfide, and the doping element of the doped fourth compound is selected from one or more of boron, nickel, molybdenum, tungsten, vanadium, chromium, copper, and platinum group metals; Optionally, the hole functional layer includes a hole injection layer and a hole transport layer stacked together, wherein the hole injection layer is closer to the anode than the hole transport layer.

7. A method for fabricating an optoelectronic device, characterized in that, Includes the following steps: A first electrode is provided, and a plurality of functional layers are formed on one side of the first electrode; and A second electrode is formed on the side of the plurality of functional layers away from the first electrode; Wherein, when the first electrode is an anode and the second electrode is a cathode, the step of forming the plurality of functional layers includes: sequentially forming a hole functional layer, an active layer and an electron functional layer on one side of the first electrode; or, when the first electrode is a cathode and the second electrode is an anode, the step of forming the plurality of functional layers includes: sequentially forming an electron functional layer, an active layer and a hole functional layer on one side of the first electrode. The method for fabricating the optoelectronic device further includes the steps of: forming a first auxiliary layer between the hole functional layer and the active layer, and / or forming a second auxiliary layer between the electronic functional layer and the active layer; The method for preparing the first auxiliary layer includes the steps of: depositing a first organic compound to obtain the first auxiliary layer, wherein the molecular weight of the first organic compound is 100 to 2000 and the first organic compound contains at least one silicon-nitrogen bond; and / or, the method for preparing the second auxiliary layer includes the steps of: depositing a second organic compound to obtain the second auxiliary layer, wherein the molecular weight of the second organic compound is 100 to 2000 and the second organic compound contains at least one silicon-nitrogen bond.

8. The method for fabricating the optoelectronic device according to claim 7, characterized in that, At least one of the following conditions must be met: (1) The boiling point of the first organic compound is not greater than 200°C, and the step of depositing the first organic compound includes: heating and evaporating the first organic compound to form a first saturated gas, and adsorbing and depositing the first saturated gas to form a first film layer; optionally, the boiling point of the first organic compound is 150°C to 200°C. (2) The boiling point of the second organic compound is not greater than 200°C, and the step of depositing the second organic compound includes: heating and evaporating the second organic compound to form a second saturated gas, and adsorbing and depositing the second saturated gas to form a second film layer; optionally, the boiling point of the first organic compound is 150°C to 200°C.

9. The method for fabricating the optoelectronic device according to claim 8, characterized in that, It has at least one of the following technical features: (1) The adsorption deposition time of the first saturated gas is 30s to 60s, and the thickness of the first film layer is 1nm to 3nm. (2) The second saturated gas adsorption deposition time is 30s to 60s, and the thickness of the second film layer is 1nm to 3nm; (3) After the step of forming the first film layer and before the step of obtaining the first auxiliary layer, the method for preparing the optoelectronic device further includes the step of: treating the first film layer with a first inert gas in a first atmosphere; and / or, after the step of forming the second film layer and before the step of obtaining the second auxiliary layer, the method for preparing the optoelectronic device further includes the step of: treating the second film layer with a second inert gas in a second atmosphere. Optionally, the first inert gas and the second inert gas are each independently selected from one or more of nitrogen, helium, neon, argon, krypton and xenon, and / or the treatment time of the first atmosphere is 10s to 10min, and / or the treatment time of the second atmosphere is 10s to 10min.

10. A display device, characterized in that, The display device includes a display panel, the display panel including a plurality of pixel units arranged in an array, each pixel unit independently including an optoelectronic device as described in any one of claims 1 to 6, or an optoelectronic device prepared by the method of preparing the optoelectronic device as described in any one of claims 7 to 9.

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