A wide-bandgap perovskite solar cell modified with an organic passivation layer and a preparation method thereof

Abstract

This invention discloses a wide-bandgap perovskite solar cell modified with an organic passivation layer and its fabrication method. The wide-bandgap perovskite solar cell of this invention comprises, from bottom to top, an anode substrate, a hole-selective contact layer, a perovskite layer, an organic passivation layer, an electron transport layer, a cathode modification layer, and a cathode, stacked sequentially. The organic passivation layer comprises 2-(piperazine-1-yl)ethylamine hydroiodate. This invention effectively passivates perovskite surface defects and also reduces the energy level difference between the perovskite layer and the electron transport layer, promoting selective electron extraction and suppressing interface charge accumulation, while simultaneously improving photovoltaic performance parameters such as open-circuit voltage, fill factor, and photoelectric conversion efficiency. The fabrication process of this invention is simple and suitable for further performance enhancement and large-scale industrial production of perovskite devices.

Description

Technical Field

[0001] This invention belongs to the field of perovskite solar cells, specifically relating to a wide-bandgap perovskite solar cell modified with an organic passivation layer and its preparation method. Background Technology

[0002] Perovskite solar cells (PVSCs), especially inverted (pin) structures, have become a research frontier in the energy field due to their excellent photoelectric performance and solution processing potential. Among them, wide-bandgap inverted perovskite cells have shown great application potential in the construction of tandem devices. However, despite the continuous improvement in their energy conversion efficiency records, the actual performance of wide-bandgap devices, especially the open-circuit voltage loss, remains significantly lower than their theoretical predictions. This gap mainly stems from the more severe non-radiative recombination losses at the surface and interface of wide-bandgap perovskite films.

[0003] The surface of perovskite thin films marks the end of the lattice periodicity and is also a region where numerous dangling bonds and defects are concentrated. These surface defects, including uncoordinated lead ions and halogen vacancies, act as efficient nonradiative recombination centers, significantly limiting carrier lifetime and becoming a key bottleneck restricting the improvement of device open-circuit voltage and fill factor. Furthermore, these defects are often unevenly distributed within the thin film, leading to low charge extraction efficiency at the interface and potentially causing localized current loss and performance fluctuations.

[0004] Surface passivation is a core strategy for suppressing nonradiative recombination and improving interface quality. For wide-bandgap perovskites, the film surface typically exhibits higher densities of defects such as halogen vacancies, posing more stringent requirements for the design and selection of traditional passivation molecules. Although existing research has demonstrated that molecular design and interface engineering can reduce defects and improve device performance to some extent, developing novel passivation materials that can precisely match the surface chemical properties of wide-bandgap perovskites, more comprehensively and effectively suppress interface recombination, and simultaneously optimize film uniformity remains a key challenge in pushing their performance boundaries.

[0005] For example, patent application CN117998878A discloses a passivation layer modified inverse perovskite solar cell, in which a passivation layer is disposed between the perovskite layer and the electron transport layer. This passivation layer includes a first passivation layer disposed on the perovskite layer and a second passivation layer disposed on the first passivation layer. The first passivation layer includes a PEAI layer, which comprises 2-phenylethylamine hydroiodate; the second passivation layer includes at least one of an OAI layer and an ADP layer, where the OAI layer comprises octylamine iodide and the ADP layer comprises 2-amidinylpyridine hydrochloride. This prior art uses a double-layer passivation structure, increasing structural complexity and the difficulty of fabrication. Furthermore, this prior art uses traditional aromatic amine passivating agents, and the passivation effect cannot meet the requirements.

[0006] Chinese patent application CN120981078A discloses a perovskite solar cell, comprising a conductive glass, a SnO2 layer, a buried interface modification layer, a perovskite layer, an interface passivation layer, a hole transport layer, and a metal electrode layer stacked sequentially. The buried interface modification layer comprises potassium fluorosulfonate. This prior art targets conventional perovskite solar cells, which have different passivation requirements than inverted perovskite solar cells and cannot be used for inverted perovskite solar cells. An ideal passivation strategy should effectively passivate the deep-level defects unique to wide-bandgap perovskites, significantly reduce the recombination rate at the interface, and create a better physical environment for charge transport across the interface, thereby synergistically improving the open-circuit voltage and energy conversion efficiency of the device.

[0007] Therefore, there is a continuous demand in the field for novel passivating agents that can specifically solve the interface problems of wide-bandgap perovskites, effectively reduce non-radiative recombination losses, and optimize the interface charge transport path. This is also the starting point and objective of the research of this invention. Summary of the Invention

[0008] To address the problems existing in the prior art, the present invention aims to provide a wide-bandgap perovskite solar cell with an organic passivation layer (interface modification layer) for interfacial modification of the perovskite layer, and a method for its fabrication. This is specifically achieved through the following technical solution: The present invention first provides a wide-bandgap perovskite solar cell modified with an organic passivation layer, comprising an anode substrate, a hole-selective contact layer, a perovskite layer, an organic passivation layer, an electron transport layer, a cathode modification layer and a cathode, which are stacked sequentially from bottom to top. The organic passivation layer comprises 2-(piperazin-1-yl)ethylamine hydroiodate.

[0009] Preferably, the thickness of the organic passivation layer is 3-8 nm.

[0010] Preferably, the organic passivation layer is formed by dissolving 2-(piperazine-1-yl)ethylamine hydroiodate in a solvent, spin-coating it onto a perovskite layer, and then annealing it.

[0011] More preferably, the solvent is isopropanol.

[0012] More preferably, 2-(piperazin-1-yl)ethylamine hydroiodate is dissolved in a solvent to form a saturated solution at room temperature, and then spin-coated.

[0013] More preferably, the annealing temperature is 100-110℃ and the time is 4-6 min.

[0014] Preferably, the anode substrate, also known as the positive substrate, is a flexible or rigid substrate on which a uniform indium tin oxide (ITO) layer or a free radical oxide (FTO) layer is deposited. More preferably, it is a rigid substrate on which an indium tin oxide (ITO) layer is deposited, the thickness of which is 90-100 nm.

[0015] Preferably, the hole-selective contact layer has a thickness of 15-25 nm, the perovskite layer has a thickness of 500-600 nm, the electron transport layer has a thickness of 30-55 nm, the cathode modification layer has a thickness of 4-9 nm, and the cathode has a thickness of 110-140 nm.

[0016] Preferably, the hole-selective contact layer comprises at least one selected from 4-(3,6-dimethyl-9H-carbazole-9-yl)butylphosphonic acid, (2-(9H-carbazole-9-yl)ethyl)phosphonic acid, (2-(pyrene-1-yl)ethyl)phosphonic acid, [2-(7-methylpyrene-1-yl)ethyl]phosphonic acid, and [2-(7-methylpyrene-1-yl)propyl]phosphonic acid. Preferably, 2-pyrene-ethylphosphonic acid is dissolved in methanol and N,N-dimethylformamide DMF (methanol to DMF volume ratio 2:1) to form a solution with a mass concentration of 0.4-0.7 mg / mL. Then, a one-step spin-coating method is used at a spin-coating rate of 3200-4500 rpm for 35-45 seconds, followed by annealing at 105-115°C for 10-30 minutes to prepare the hole transport layer.

[0017] The electron transport layer is a C vapor-deposited layer on the organic passivation layer. 60 film.

[0018] The cathode modification layer is 2,9-dimethyl-4,7-biphenyl-1,10-phenanthroline deposited on the electron transport layer.

[0019] The cathode is a silver or copper film deposited on the cathode modification layer by vacuum thermal evaporation.

[0020] Preferably, the perovskite layer has a band gap of 1.66-1.70 eV. It is obtained by continuously spin-coating a perovskite precursor solution at 4300-5300 rpm for 45-50 s, and adding 220-300 μL of chlorobenzene as an anti-solvent when there are 25-30 s remaining in the spin-coating process. The resulting wet film is then annealed at 100-110℃ for 28-32 min.

[0021] In the preparation step of the perovskite precursor solution, the A-site uses a mixed ratio of formamidine (FA) ions and cesium (Cs) ions; the B-site uses lead (Pb) ions; and the X-site uses the same iodine (I), bromine (Br), and chloride (Cl) ions or different iodine, bromine, and chlorine halogen atoms. The precursor solution is selected from polar solvents capable of dissolving the perovskite material, such as N,N-dimethylformamide (DMF) or dimethyl sulfoxide (DMSO). In this scheme, the perovskite material is selected from at least one of CsCl, PbCl2, CsI, PbBr2, FAI, and PbI2. Additionally, MACl (methylammonium chloride) is added as an additive to the perovskite precursor solution.

[0022] The present invention further provides a method for preparing a wide-bandgap perovskite solar cell modified with the organic passivation layer, comprising the following steps: providing an anode substrate, and after cleaning, sequentially preparing a hole-selective contact layer, a perovskite layer, an organic passivation layer, an electron transport layer, a cathode modification layer, and a cathode on the anode substrate from bottom to top.

[0023] This invention utilizes an organic passivation layer obtained from the highly efficient passivating agent 2-(piperazin-1-yl)ethylamine hydroiodate as an interface modification layer between the perovskite layer and the electron transport layer. The advantages are twofold: Firstly, this molecule possesses three bonding sites—-NH2, -NH-, and intracyclic tertiary amines—that can bind to lead ions / halogen vacancies, simultaneously passivating cation and anion defects on the perovskite surface and grain boundaries, significantly reducing the density of non-radiative recombination centers, and improving the open-circuit voltage and fill factor. Secondly, after modification with 2-(piperazin-1-yl)ethylamine hydroiodate, the fluorescence quantum yield of the perovskite film increases, and the average carrier lifetime is extended, thus prolonging the lifetime of perovskite solar cell devices.

[0024] This invention uses an organic passivation layer obtained from 2-(piperazine-1-yl)ethylamine hydroiodate as an interface modification layer for the perovskite layer. This layer serves as a post-treatment for the prepared perovskite film and does not affect the early crystallization process of the perovskite film. Furthermore, this organic passivation layer, while ensuring effective passivation of defects on the perovskite surface and at grain boundaries, also promotes electron-selective extraction and suppresses interface charge accumulation. Therefore, it can further improve the energy conversion efficiency of perovskite solar cells.

[0025] The structural formula of 2-(piperazin-1-yl)ethylamine hydroiodate is as follows: This invention effectively passivates perovskite surface defects and reduces the energy level difference between the perovskite layer and the electron transport layer, promoting selective electron extraction and suppressing interface charge accumulation. Compared to the 20.09% efficiency of the reference device without interface modification, the photoelectric conversion efficiency of the device modified with the organic passivation layer is increased to 22.11%, while also improving the open-circuit voltage of the device. V OC This invention improves photovoltaic performance parameters such as fill factor (FF) and power conversion efficiency (PCE). It combines the dual functions of passivation and energy level regulation. The fabrication process is simple and suitable for further performance enhancement and large-scale industrial production of perovskite devices. Attached Figure Description

[0026] Figure 1 This invention relates to a device structure for a perovskite solar cell with an organic passivation layer modified at the interface.

[0027] Figure 2 These are the current-voltage curves and photovoltaic performance parameters of perovskite solar cells with and without organic passivation layer modification.

[0028] Figure 3 This is a photoluminescence imaging (PL mapping) of perovskite thin films with and without organic passivation layer modification.

[0029] Figure 4 The fluorescence quantum yield (PLQY) of perovskite thin films with and without organic passivation layer modification.

[0030] Figure 5 These are time-resolved photoluminescence (TRPL) images of perovskite thin films with and without organic passivation layer modification. Detailed Implementation

[0031] Example 1 In Example 1, 2-(piperazine-1-yl)ethylamine hydroiodate at a concentration of 0.05 mg / mL was dissolved in isopropanol (IPA) as an interface modifier to modify the perovskite layer. The perovskite solar cell containing a 2-(piperazin-1-yl)ethylamine hydroiodate passivation interface modification layer has the following device structure: ITO / (2-(pyrene-1-yl)ethyl)phosphoric acid (Py3) / FA 0.74 Cs 0.26 PbI 2.43 Br 0.43 Cl 0.14 / Organic passivation layer / C 60 / BCP / Ag.

[0032] The thickness of the ITO (Indium Tin Oxide) positive substrate is 90-100nm, and the sheet resistance is 15-20Ω. Before use, the substrate is ultrasonically cleaned with deionized water, acetone, and isopropanol solutions in sequence. Then, it is dried with a nitrogen gun and treated with a plasma cleaner for 35 minutes.

[0033] The hole-selective contact layer Py3 has a thickness of approximately 20 nm. It was spin-coated onto an ITO layer in a nitrogen glove box (with H2O and O2 contents both less than 1 ppm), and then annealed. The spin-coating speed was 3200 rpm, the spin-coating time was 35 seconds, the annealing temperature was 105℃, and the annealing time was 10 minutes. The Py3 hole-selective contact layer was thus prepared.

[0034] 100 μL of FA was dropped onto the prepared Py3 film. 0.74 Cs 0.26 PbI 2.43 Br 0.43 Cl 0.14 The perovskite precursor solution was spin-coated at 4300 rpm for 45 seconds. At the 25-second countdown, 220 μL of chlorobenzene (CB) was added dropwise at a uniform rate, followed by annealing at 100 °C to obtain a perovskite layer with a thickness of approximately 500 nm.

[0035] FA 0.74 Cs 0.26 PbI 2.43 Br 0.43 Cl 0.14 The perovskite precursor solution had a molar concentration of 1.68 M, in which the volume ratio of DMF to DMSO in the mixed solvent of N,N-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) was 4:1. An additional 5% molar concentration of MACl (methylammonium chloride) was added directly to the precursor solution as an additive. The prepared mixture was stirred overnight on a magnetic stirrer at room temperature until completely dissolved.

[0036] The method for preparing the perovskite thin film is as follows: after filtering the above solution, spin-coating is performed on a rigid substrate with a hole selective contact layer using a one-step spin-coating method. After spin-coating is completed, the substrate is heated at 100°C for 28 minutes.

[0037] The interface modification layer of the organic passivation layer is formed by dissolving 2-(piperazine-1-yl)ethylamine hydroiodate in isopropanol (IPA), shaking thoroughly, forming a saturated solution at room temperature, filtering, and then dynamically spin-coating it onto the perovskite layer, followed by annealing at 100°C for 4 minutes. The thickness of the interface modification layer is approximately 5 nm.

[0038] The electron transport layer C in the battery structure 60 (Fullerene C) 60The cathode modification layer BCP and the cathode Ag were both prepared by vacuum thermal evaporation. 60 The film thickness is 20-50 nm, and the evaporation rate is 0.2-0.4 Å / s; the BCP film thickness is 4-9 nm, and the evaporation rate is 0.1-0.2 Å / s; the Ag electrode thickness is 110-140 nm, and the evaporation rate is 1.2-1.8 Å / s.

[0039] The structure of the perovskite solar cell prepared above is as follows: Figure 1 As shown, it includes, from bottom to top, an anode substrate (ITO), a hole-selective contact layer, a perovskite layer, an organic passivation layer, an electron transport layer, a cathode modification layer, and a cathode, stacked sequentially.

[0040] Example 2 Example 2 is the same as Example 1, except that the spin coating rate of the hole selective contact layer is 4500 rpm, the spin coating time is 45 seconds, the annealing temperature is 115℃, and the annealing time is 30 minutes, and the Py3 hole selective contact layer is finally prepared.

[0041] 150 μL of FA was dropped onto the prepared Py3 film. 0.74 Cs 0.26 PbI 2.43 Br 0.43 Cl 0.14 The perovskite precursor solution was spin-coated at 5300 rpm for 50 seconds. At the 30-second countdown, 300 μL of chlorobenzene (CB) was added dropwise at a uniform rate, followed by annealing at 110 °C to obtain a perovskite layer with a thickness of approximately 500 nm.

[0042] The method for preparing the perovskite thin film is as follows: after filtering the above solution, spin-coating is performed on a rigid substrate with a hole selective contact layer using a one-step spin-coating method. After spin-coating is completed, the substrate is heated at 110°C for 32 minutes.

[0043] The interface modification layer of the organic passivation layer is formed by dissolving 2-(piperazine-1-yl)ethylamine hydroiodate in isopropanol (IPA), shaking thoroughly, forming a saturated solution at room temperature, filtering, and then dynamically spin-coating it onto the perovskite layer, followed by annealing at 110°C for 6 minutes. The thickness of the interface modification layer is approximately 5 nm.

[0044] Example 3 In Example 3, 2-(piperazine-1-yl)ethylamine hydroiodate at a concentration of 0.075 mg / mL was dissolved in isopropanol (IPA) and used as an interface modifier to modify the perovskite layer. Other conditions were the same as in Example 1.

[0045] Example 4 In Example 4, 0.1 mg / mL of 2-(piperazine-1-yl)ethylamine hydroiodate dissolved in isopropanol (IPA) was used as an interface modifier to modify the perovskite layer, with other conditions the same as in Example 1.

[0046] Comparative Example 1 In Comparative Example 1, no interface modification was performed on the perovskite layer, and other conditions were the same as in Example 1.

[0047] Detection Example 1 Effect detection: (1) Photovoltaic performance testing of perovskite devices The device's energy conversion efficiency was tested under an AAA-grade solar simulator with a test step of 5 ms and an effective area of ​​0.646 cm². 2 The bias voltage ranges from 1.3V to -0.1V.

[0048] like Figure 2 As can be seen, the perovskite solar cell obtained in Example 3, which modifies the perovskite layer at a concentration of 0.075 mg / mL with 2-(piperazin-1-yl)ethylamine hydroiodate, exhibits a champion power conversion efficiency of 22.11%. The perovskite solar cells obtained in Examples 1, 2, and 4, which modify the perovskite layer at concentrations of 0.05 mg / mL and 0.1 mg / mL with 2-(piperazin-1-yl)ethylamine hydroiodate, have champion power conversion efficiencies of 21.63%, 21.18%, and 21.42%, respectively. The highest power conversion efficiency of the unmodified wide-bandgap perovskite device in Comparative Example 1 is 20.09%. Therefore, this strategy of modifying the wide-bandgap perovskite layer with an organic passivator significantly improves the power conversion efficiency of the solar cell.

[0049] (2) Photoluminescence imaging test of perovskite thin films: This method utilizes photoluminescence imaging technology to test the perovskite thin films obtained in Example 2 and Comparative Example 1. Figure 3 Photoluminescence peak shift diagrams for perovskite films modified with and without organic passivation layers.

[0050] The redder peak position observed in Comparative Example 1 indicates the presence of numerous deep-level defects in the unpassivated perovskite film, such as lead vacancies / halogen vacancies, which trap photogenerated carriers. In contrast, the peak position in Example 2 shows a relative blue shift, indicating that the passivation molecules successfully bind to these deep-level defects, preventing them from trapping carriers and allowing photogenerated carriers to recombine more readily via band-edge radiative recombination. The blue shift in the peak position of the perovskite film obtained in Example 2, which uses 0.075 mg / mL of 2-(piperazine-1-yl)ethylamine hydroiodate for interface modification of the perovskite layer, demonstrates that deep-level defects are effectively eliminated and non-radiative recombination channels are suppressed. The overall blue shift also indicates a uniform passivation effect, improving the film's quality uniformity and thus significantly enhancing device parameters such as open-circuit voltage and photoelectric conversion efficiency.

[0051] (3) Fluorescence quantum yield test: The fluorescence quantum yield of the perovskite films obtained in Example 2 and Comparative Example 1 was measured using a fluorescence spectrophotometer under the same conditions. The results are as follows: Figure 4 As shown.

[0052] Depend on Figure 4 It can be seen that the fluorescence quantum yield (PLQY) of the unmodified perovskite film in Comparative Example 1 is 0.89%, while the PLQY of the perovskite film obtained in Example 2, which modifies the perovskite layer at the interface using 0.075 mg / mL of 2-(piperazine-1-yl)ethylamine hydroiodate, is 4.43%. The higher PLQY indicates that the nonradiative recombination loss of the perovskite material in Example 2 is reduced, and the defect state density at the interface is effectively suppressed, thus facilitating carrier transport and extraction. The improved PLQY demonstrates that this strategy of using an organic passivation layer to passivate the perovskite layer can more effectively reduce the nonradiative recombination loss of carriers at the interface, thereby improving the open-circuit voltage of the device. This is also the key reason for the improved performance of the wide-bandgap perovskite device in Example 2.

[0053] (4) Time-resolved photoluminescence test: The perovskite films obtained in Example 2 and Comparative Example 1 were characterized using time-resolved photoluminescence assays under the same conditions, and the results are as follows: Figure 5 As shown.

[0054] Depend on Figure 5It is evident that after interface modification of the perovskite layer with 0.075 mg / mL of 2-(piperazin-1-yl)ethylamine hydroiodate, the photoelectric properties of the perovskite film exhibit a qualitative leap. Specifically, the average carrier lifetime of the unmodified perovskite film in Comparative Example 1 was 202.89 ns, while the average carrier lifetime of the perovskite film obtained in Example 2, which underwent interface modification of the perovskite layer with 0.075 mg / mL of 2-(piperazin-1-yl)ethylamine hydroiodate, was significantly increased to 381.78 ns, representing an increase of approximately 89%. This near-doubling of carrier lifetime directly and powerfully demonstrates that the strategy of interface modification of the perovskite layer with 0.075 mg / mL of 2-(piperazin-1-yl)ethylamine hydroiodate can extremely effectively suppress nonradiative recombination on the perovskite film surface. In perovskite solar cells, nonradiative recombination is a key factor leading to the loss of photogenerated carriers, thereby limiting the improvement of the device's open-circuit voltage and fill factor. The organic passivation layer strategy employed in this invention can passivate defect states (such as lead vacancies and halogen vacancies) on the perovskite surface, forming a superior interface environment. This passivation layer can effectively suppress nonradiative recombination of charge carriers at the interface, reducing the recombination probability of charge carriers during transport, and enabling more charge carriers to be effectively collected. This can significantly improve the open-circuit voltage and photoelectric conversion efficiency of the device, thereby fabricating high-performance perovskite optoelectronic devices.

Claims

1. A wide-bandgap perovskite solar cell modified with an organic passivation layer, characterized in that, It includes, from bottom to top, an anode substrate, a hole-selective contact layer, a perovskite layer, an organic passivation layer, an electron transport layer, a cathode modification layer, and a cathode, wherein the organic passivation layer includes 2-(piperazin-1-yl)ethylamine hydroiodate.

2. The wide-bandgap perovskite solar cell modified with the organic passivation layer according to claim 1, characterized in that, The thickness of the organic passivation layer is 3-8 nm.

3. The wide-bandgap perovskite solar cell modified with the organic passivation layer according to claim 1, characterized in that, The organic passivation layer is formed by dissolving 2-(piperazine-1-yl)ethylamine hydroiodate in a solvent, spin-coating it onto a perovskite layer, and then annealing it.

4. The wide-bandgap perovskite solar cell modified with the organic passivation layer according to claim 3, characterized in that, The solvent is at least one of isopropanol, N,N-dimethylformamide, and toluene.

5. The wide-bandgap perovskite solar cell modified with the organic passivation layer according to claim 3, characterized in that, 2-(piperazin-1-yl)ethylamine hydroiodate was dissolved in a solvent to form a saturated solution at room temperature, and then spin-coated.

6. The wide-bandgap perovskite solar cell modified with the organic passivation layer according to claim 3, characterized in that, The annealing temperature is 100-110℃, and the time is 4-6 min.

7. The wide-bandgap perovskite solar cell modified with the organic passivation layer according to claim 1, characterized in that, The hole-selective contact layer has a thickness of 15-25 nm, the perovskite layer has a thickness of 500-600 nm, the electron transport layer has a thickness of 30-55 nm, the cathode modification layer has a thickness of 4-9 nm, and the cathode has a thickness of 110-140 nm.

8. The wide-bandgap perovskite solar cell modified with the organic passivation layer according to claim 1, characterized in that, The hole-selective contact layer comprises at least one of 4-(3,6-dimethyl-9H-carbazole-9-yl)butylphosphonic acid, (2-(9H-carbazole-9-yl)ethyl)phosphonic acid, (2-(pyrene-1-yl)ethyl)phosphonic acid, [2-(7-methylpyrene-1-yl)ethyl]phosphonic acid, and [2-(7-methylpyrene-1-yl)propyl]phosphonic acid; The electron transport layer is a C vapor-deposited layer on the organic passivation layer. 60 film; The cathode modification layer is 2,9-dimethyl-4,7-biphenyl-1,10-phenanthroline deposited on the electron transport layer; The cathode is a silver or copper film deposited on the cathode modification layer by vacuum thermal evaporation.

9. The wide-bandgap perovskite solar cell modified with the organic passivation layer according to claim 1, characterized in that, The perovskite layer has a band gap of 1.66-1.70 eV. It is obtained by spin-coating a perovskite precursor solution at 4300-5300 rpm for 45-50 s, with 220-300 μL of chlorobenzene added as an anti-solvent when there are 25-30 s remaining in the spin-coating process. The resulting wet film is then annealed at 100-110℃ for 28-32 min.

10. A method for preparing a wide-bandgap perovskite solar cell modified with an organic passivation layer according to any one of claims 1 to 9, characterized in that, Includes the following steps: An anode substrate is provided. After cleaning, a hole-selective contact layer, a perovskite layer, an organic passivation layer, an electron transport layer, a cathode modification layer, and a cathode are sequentially prepared on the anode substrate from bottom to top.

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