A thermosetting resin material for sealing a semiconductor chip and a method for producing the same

Abstract

The application discloses a kind of thermosetting resin materials for semiconductor chip sealing and preparation method thereof, it is related to epoxy resin technical field.The thermosetting resin materials for semiconductor chip sealing, including the following weight fraction raw materials: epoxy resin 50-60 parts, modified benzo-oxazin 10-15 parts, toughening agent 4-6 parts, inorganic filler 250-300 parts, silane coupling agent 10-15 parts, release agent 1-2 parts, curing agent 25-30 parts, curing accelerator 0.5-0.8 parts;The thermosetting resin materials for semiconductor chip sealing prepared by the application has excellent spiral flow length, bending strength, thermal conductivity, glass transition temperature and lower water absorption.

Description

Technical Field

[0001] This invention relates to the field of epoxy resin technology, specifically to a thermosetting resin material for sealing semiconductor chips and its preparation method. Background Technology

[0002] With the rapid development of semiconductor integrated circuit technology, the integration density of semiconductor chips is constantly increasing, and the feature size is constantly shrinking, leading to increasingly stringent requirements for packaging materials. The main purpose of semiconductor chip packaging is to protect the chip from the effects of the external environment (such as moisture, dust, mechanical stress, thermal shock, etc.), while providing electrical insulation, heat dissipation support, and mechanical protection. Thermosetting resin materials have become one of the most mainstream materials for semiconductor chip sealing (packaging) due to their excellent insulation properties, adhesion, heat resistance, moisture resistance, and molding processability. However, traditional thermosetting resin materials still have shortcomings. On the one hand, the material easily absorbs moisture in high temperature and high humidity environments, leading to vapor pressure within the package, causing delamination and cracking, which seriously affects the long-term reliability of the device. On the other hand, the material itself has low thermal conductivity, and increasing thermal conductivity through high filler content will drastically increase melt viscosity, thereby worsening molding flowability and reducing production yield.

[0003] Chinese invention patent CN110922720A discloses a ternary thermosetting resin composition for semiconductor device encapsulation. This composition comprises a multifunctional epoxy resin, an arylalkylphenol resin, a diamine-type benzoxazine resin, a curing accelerator, an inorganic filler, and a tannic acid derivative. This ternary thermosetting resin composition can be rapidly cured at 160-190°C with relatively low post-curing temperatures and short curing times. The cured product exhibits high flexural strength, glass transition temperature, and thermal stability, while also possessing low dielectric constant and dielectric loss, making it suitable for third-generation semiconductor power device encapsulation. However, its flexural strength and thermal stability still require improvement. Summary of the Invention

[0004] To address the shortcomings of existing technologies, the present invention aims to provide a thermosetting resin material for sealing semiconductor chips and its preparation method.

[0005] A thermosetting resin material for sealing semiconductor chips comprises the following raw materials in parts by weight:

[0006] 50-60 parts epoxy resin, 10-15 parts modified benzoxazine, 4-6 parts toughening agent, 250-300 parts inorganic filler, 10-15 parts silane coupling agent, 1-2 parts release agent, 25-30 parts curing agent, and 0.5-0.8 parts curing accelerator;

[0007] The modified benzoxazine has the following structural formula:

[0008] .

[0009] The inorganic filler is composed of alumina and modified boron nitride mixed in a mass ratio of (3-4):1.

[0010] The modified boron nitride is prepared by the following method:

[0011] The modified boron nitride was obtained by mixing sodium hydroxide solution with boron nitride, heating and stirring, filtering, washing and drying.

[0012] The toughening agent is nitrile rubber.

[0013] The release agent is carnauba wax.

[0014] The curing agent is a linear phenolic resin.

[0015] The curing accelerator is one of 2-methylimidazole and 2-phenylimidazole.

[0016] The silane coupling agent is 3-glycidoxypropyltrimethoxysilane.

[0017] The modified benzoxazine was prepared by the following method:

[0018] S1: 4-Allyl-2-methoxyphenol reacts with methyl-hydro-cyclic siloxane to give intermediate A, and the reaction equation is shown below:

[0019]

[0020] S2: Intermediate A reacts with hexadecylamine in the presence of paraformaldehyde to yield modified benzoxazine. The reaction equation is shown below:

[0021]

[0022] A method for preparing a thermosetting resin material for sealing semiconductor chips includes the following steps:

[0023] (1) Weigh out the following components by weight: 50-60 parts epoxy resin, 10-15 parts modified benzoxazine, 4-6 parts toughening agent, 250-300 parts inorganic filler, 10-15 parts silane coupling agent, 1-2 parts release agent, 25-30 parts curing agent, and 0.5-0.8 parts curing accelerator;

[0024] (2) Mix the ethanol aqueous solution, silane coupling agent and inorganic filler evenly, adjust the pH to 4-5 with acid, heat the reaction, filter and dry to obtain the modified filler;

[0025] (3) Mix epoxy resin, modified benzoxazine, toughening agent, modified filler, release agent, curing agent and curing accelerator evenly, add to twin screw extruder, extrude and mold, crush and sieve to obtain thermosetting resin material for semiconductor chip sealing.

[0026] In step (2), the acid is acetic acid.

[0027] In step (2), the temperature of the heating reaction is 50-60℃ and the time is 5-7h.

[0028] Due to the adoption of the above technical solutions, the beneficial effects of the present invention include:

[0029] The thermosetting resin material for sealing semiconductor chips prepared by this invention has excellent spiral flow length, flexural strength, thermal conductivity, glass transition temperature and low water absorption. Attached Figure Description

[0030] Figure 1 The 1H NMR spectrum of the modified benzoxazine prepared in Example 1.

[0031] Figure 2 The high-resolution mass spectrum of the modified benzoxazine prepared in Example 1 is shown.

[0032] Figure 3 The infrared spectra of intermediate A and modified benzoxazine prepared in Example 1 are shown. Detailed Implementation

[0033] Example 1 Preparation of modified benzoxazine

[0034] S1: Under nitrogen protection, 400 ml of anhydrous toluene, 1 g of Wilkinson catalyst, and 0.31 mol of 4-allyl-2-methoxyphenol were added to a reaction flask and stirred until homogeneous. The mixture was heated to 100 °C, and 100 ml of anhydrous toluene solution containing 0.1 mol of methyl-hydro-cyclic siloxane was slowly added dropwise over 1 hour. The reaction was allowed to proceed for 8 hours, cooled to room temperature, and 10 g of activated carbon was added and stirred for 30 minutes. The mixture was then filtered, and the filtrate was washed with 100 ml of saturated sodium bicarbonate solution and then with saturated brine until neutral. The organic phase was dried over 20 g of anhydrous sodium sulfate, filtered, and rotary evaporated at 70 °C to constant weight to obtain intermediate A. Its 1H NMR spectrum is as follows: 1H NMR (400 MHz, Chloroform-d) δ 6.74 (d, J = 8.8 Hz, 3H), 6.66 (ddt, J = 8.6, 1.7, 1.0 Hz, 3H), 6.60 (dt, J = 1.8, 0.9 Hz, 3H), 6.04 (s, 3H), 3.82 (s, 9H), 2.54 (tt, J= 9.0, 1.0 Hz, 6H), 1.63 – 1.52 (m, 6H), 0.78 (t, J = 8.5 Hz, 6H), -0.10 (s,9H); HRMS (m / z): 673.2609[M+H] + ;

[0035] S2: Under nitrogen protection, 600 ml of toluene and 18 g of paraformaldehyde were added to a reaction flask and stirred for 30 min. Then, 0.1 mol of intermediate A and 0.31 mol of hexadecylamine were added sequentially. The mixture was heated to 100 °C and reacted for 20 h. During this time, the water produced in the reaction was separated using a water separator. The mixture was cooled to room temperature and rotary evaporated at 65 °C to constant weight. A mixed solution of 500 ml of ethyl acetate and n-hexane (V) was added. 乙酸乙酯 V 正己烷 =1:1) Stir and heat to dissolve, keep warm for 30 min, cool to 0℃ and stand for 2 h to precipitate, filter, and use a mixed solution of ethyl acetate and n-hexane (V 乙酸乙酯 V 正己烷 Wash with a 1:1 ratio (2×50ml), vacuum dry at 50℃ for 12h to obtain modified benzoxazine; its 1H NMR spectrum is shown below. Figure 1 As shown, the proton NMR data are as follows: 1 H NMR (400 MHz, Chloroform-d) δ 6.93 (dp,J = 2.0, 1.0 Hz, 3H), 6.61 (dt, J = 2.2, 1.1 Hz, 3H), 4.78 (s, 6H), 3.90 (s,9H), 3.81 (d, J = 1.1 Hz, 3H), 3.75 (d, J = 1.0 Hz, 3H), 2.67 (t, J = 6.0 Hz,6H), 2.49 (tt, J = 8.9, 1.1 Hz, 6H), 1.66 – 1.49 (m, 12H), 1.37 – 1.23 (m,78H), 0.93 – 0.85 (m, 9H), 0.77 (t, J = 8.3 Hz, 6H), -0.11 (s, 9H); High-resolution mass spectra are shown below. Figure 2As shown, HRMS (m / z): 1469.0921 [M+H] + .

[0036] Figure 3 The figures show the infrared spectra of intermediate A and modified benzoxazine. As can be seen from the figures, intermediate A has a temperature range of 3448°C. -1 It exhibits a stretching vibration peak of the phenolic hydroxyl group (-OH) at 1085. -1 With 1020 -1 A distinct siloxane (Si-O-Si) framework characteristic absorption was observed at 2100, while at 2100 -1 The near disappearance of the Si-H characteristic peaks confirms that the hydrosilylation reaction proceeded completely. The modified benzoxazine at 3448... -1 The hydroxyl peak at point 1232 has almost disappeared, and has been replaced by a peak at point 1232. -1 The new characteristic peak at the location corresponds to the Ar-OC characteristic peak, proving the successful construction of the benzoxazine ring structure.

[0037] Example 2 Preparation of modified boron nitride

[0038] 600 ml of 1 mol / L NaOH solution and 80 g of boron nitride were placed in a reaction flask, stirred and mixed, refluxed and stirred for 20 h, cooled to room temperature, filtered, washed with deionized water until neutral, and dried under vacuum at 90 °C for 8 h to obtain modified boron nitride.

[0039] Example 3: Preparation of thermosetting resin material for sealing semiconductor chips

[0040] (1) Weigh out: 50g of epoxy resin, 10g of modified benzoxazine (prepared in Example 1), 4g of toughening agent (nitrile rubber), 250g of inorganic filler (187.5g of alumina and 62.5g of modified boron nitride (prepared in Example 2), 10g of silane coupling agent (3-glycidyl etheroxypropyltrimethoxysilane), 1g of release agent (carnauba wax), 25g of curing agent (linear phenolic resin), and 0.5g of curing accelerator (2-methylimidazole);

[0041] (2) Mix 1000ml of 90wt% ethanol aqueous solution, silane coupling agent and inorganic filler evenly, adjust the pH to 4 with acetic acid, heat to 50℃ and react for 3h, cool to room temperature, filter, wash with anhydrous ethanol (3×50ml), and vacuum dry at 80℃ for 10h to obtain modified filler.

[0042] (3) Epoxy resin, modified benzoxazine, toughening agent, modified filler, release agent, curing agent and curing accelerator are added to the mixer in sequence and stirred at 500 rpm for 10 min. The mixture is then added to a twin-screw extruder with a length-to-diameter ratio of 20:1, a feeding section temperature of 30℃, a melting section temperature of 85℃, a mixing section temperature of 100℃, an extrusion section temperature of 95℃ and a screw speed of 200 rpm. The mixture is cooled to room temperature by a water-cooled roller press and then pulverized through a 200-mesh sieve to obtain a thermosetting resin material for sealing semiconductor chips.

[0043] Example 4: Preparation of thermosetting resin material for sealing semiconductor chips

[0044] (1) Weigh out: 55g of epoxy resin, 12g of modified benzoxazine (prepared in Example 1), 5g of toughening agent (nitrile rubber), 290g of inorganic filler (230g of alumina and 60g of modified boron nitride (prepared in Example 2), 14g of silane coupling agent (3-glycidyl etheroxypropyltrimethoxysilane), 1.5g of release agent (carnauba wax), 28g of curing agent (linear phenolic resin), and 0.6g of curing accelerator (2-methylimidazole);

[0045] (2) Mix 1200ml of 90wt% ethanol aqueous solution, silane coupling agent and inorganic filler evenly, adjust the pH to 4.5 with acetic acid, heat to 50℃ and react for 3h, cool to room temperature, filter, wash with anhydrous ethanol (3×50ml), and vacuum dry at 80℃ for 10h to obtain modified filler;

[0046] (3) Epoxy resin, modified benzoxazine, toughening agent, modified filler, release agent, curing agent and curing accelerator are added to the mixer in sequence and stirred at 500 rpm for 10 min. The mixture is then added to a twin-screw extruder with a length-to-diameter ratio of 20:1, a feeding section temperature of 30℃, a melting section temperature of 85℃, a mixing section temperature of 100℃, an extrusion section temperature of 95℃ and a screw speed of 200 rpm. The mixture is cooled to room temperature by a water-cooled roller press and then pulverized through a 200-mesh sieve to obtain a thermosetting resin material for sealing semiconductor chips.

[0047] Example 5: Preparation of thermosetting resin material for sealing semiconductor chips

[0048] (1) Weigh out: 60g of epoxy resin, 15g of modified benzoxazine (prepared in Example 1), 6g of toughening agent (nitrile rubber), 300g of inorganic filler (240g of alumina and 60g of modified boron nitride (prepared in Example 2), 15g of silane coupling agent (3-glycidyl etheroxypropyltrimethoxysilane), 2g of release agent (carnauba wax), 30g of curing agent (linear phenolic resin), and 0.8g of curing accelerator (2-phenylimidazole);

[0049] (2) Mix 1300ml of 90wt% ethanol aqueous solution, silane coupling agent and inorganic filler evenly, adjust the pH to 5 with acetic acid, heat to 50℃ and react for 3h, cool to room temperature, filter, wash with anhydrous ethanol (3×50ml), and vacuum dry at 80℃ for 10h to obtain modified filler;

[0050] (3) Epoxy resin, modified benzoxazine, toughening agent, modified filler, release agent, curing agent and curing accelerator are added to the mixer in sequence and stirred at 500 rpm for 10 min. The mixture is then added to a twin-screw extruder with a length-to-diameter ratio of 20:1, a feeding section temperature of 30℃, a melting section temperature of 85℃, a mixing section temperature of 100℃, an extrusion section temperature of 95℃ and a screw speed of 200 rpm. The mixture is cooled to room temperature by a water-cooled roller press and then pulverized through a 200-mesh sieve to obtain a thermosetting resin material for sealing semiconductor chips.

[0051] Comparative Example 1

[0052] The raw material composition and preparation method of the thermosetting resin material for sealing semiconductor chips are basically the same as in Example 4, except that the modified benzoxazine is replaced with an equal weight of modified benzoxazine prepared by the following method:

[0053] The preparation method of modified benzoxazine is basically the same as that in Example 1, except that the methyl-hydro-cyclic siloxane in step S1 is replaced with 0.15 mol of 1,1,3,3,5,5,7,7-octamethyltetrasiloxane, the amount of hexadecylamine added in step S2 is replaced with 0.2 mol, and the amount of paraformaldehyde added is replaced with 12 g.

[0054] Comparative Example 2

[0055] The raw material composition and preparation method of the thermosetting resin material for sealing semiconductor chips are basically the same as in Example 4, except that the modified benzoxazine is replaced with an equal weight of modified benzoxazine prepared by the following method:

[0056] The preparation method of modified benzoxazine is basically the same as that in Example 1, except that the methyl-hydro-cyclic siloxane in step S1 is replaced with 0.075 mol of 1,3,5,7-tetramethylcyclotetrasiloxane, the amount of hexadecylamine added in step S2 is replaced with 0.4 mol, and the amount of paraformaldehyde added is replaced with 20 g.

[0057] Comparative Example 3

[0058] The raw material composition and preparation method of the thermosetting resin material for sealing semiconductor chips are basically the same as in Example 4, except that the modified benzoxazine is replaced with an equal weight of modified benzoxazine prepared by the following method:

[0059] The preparation method of modified benzoxazine is basically the same as that in Example 1, except that hexadecylamine in step S2 is replaced with an equimolar amount of n-hexylamine.

[0060] Comparative Example 4

[0061] The raw material composition and preparation method of the thermosetting resin material for sealing semiconductor chips are basically the same as in Example 4, except that the modified benzoxazine is replaced with an equal weight of modified benzoxazine prepared by the following method:

[0062] The preparation method of modified benzoxazine is basically the same as that in Example 1, except that the amount of hexadecylamine added in step S2 is replaced with 0.21 mol and the amount of paraformaldehyde added is replaced with 12 g.

[0063] Comparative Example 5

[0064] Preparation of thermosetting resin materials for sealing semiconductor chips

[0065] (1) Weigh out: 55g of epoxy resin, 12g of modified benzoxazine (prepared in Example 1), 5g of toughening agent (nitrile rubber), 290g of inorganic filler (230g of alumina and 60g of modified boron nitride (prepared in Example 2), 14g of silane coupling agent (3-glycidyl etheroxypropyltrimethoxysilane), 1.5g of release agent (carnauba wax), 28g of curing agent (linear phenolic resin), and 0.6g of curing accelerator (2-methylimidazole);

[0066] (2) Epoxy resin, modified benzoxazine, toughening agent, inorganic filler, silane coupling agent, release agent, curing agent and curing accelerator are added to the mixer in sequence and stirred at 500 rpm for 10 min. The mixture is then added to a twin-screw extruder with an length-to-diameter ratio of 20:1, a feeding section temperature of 30℃, a melting section temperature of 85℃, a mixing section temperature of 100℃, an extrusion section temperature of 95℃ and a screw speed of 200 rpm. The mixture is cooled to room temperature by a water-cooled roller press and then pulverized through a 200-mesh sieve to obtain a thermosetting resin material for sealing semiconductor chips.

[0067] Comparative Example 6

[0068] The raw material composition and preparation method of the thermosetting resin material for sealing semiconductor chips are basically the same as those in Example 4. The difference is that the silane coupling agent (3-glycidoxypropyltrimethoxysilane) is replaced with an equal weight of 3-glycidoxypropylmethyldimethoxysilane.

[0069] Comparative Example 7

[0070] The raw material composition and preparation method of the thermosetting resin material for sealing semiconductor chips are basically the same as those in Example 4, except that the modified boron nitride is replaced with an equal weight of unmodified boron nitride.

[0071] Comparative Example 8

[0072] The raw material composition and preparation method of the thermosetting resin material for sealing semiconductor chips are basically the same as those in Example 4, except that the amount of alumina added is replaced with 12g and the amount of modified boron nitride added is replaced with 44g.

[0073] The epoxy resin used in the embodiments and comparative examples of this application is o-cresol epoxy resin, model SQCN700-2, produced by Jinan Shengquan Group Co., Ltd.; the linear phenolic resin is model ResiCare®3004, produced by Shanghai Hengfeng New Material Technology Co., Ltd.; the nitrile rubber is model PNBR-03A, produced by Nanjing Xinfeima Chemical Co., Ltd.; the alumina is model HGSA01, produced by Zhengzhou Haixu Abrasive Co., Ltd.; the boron nitride is model PBN100, produced by Xinyang Defupeng New Material Co., Ltd.; and the carnauba wax is model BLK-B, produced by Beijing Likang Weiye Technology Co., Ltd.

[0074] The thermosetting resin materials for sealing semiconductor chips prepared in the examples and comparative examples were tested for spiral flow length, flexural strength, thermal conductivity, glass transition temperature, and water absorption rate according to GB / T 40564-2021 standard.

[0075] Table 1 Performance Test Data

[0076] project Spiral flow length / cm Bending strength / MPa Thermal conductivity / W / (m·K) Glass transition temperature / °C Water absorption rate / % Example 3 94.2 166.7 2.87 252 0.20 Example 4 95.5 168.2 2.93 264 0.17 Example 5 92.6 167.4 2.79 258 0.21 Comparative Example 1 98.2 159.5 2.86 241 0.22 Comparative Example 2 83.4 152.1 2.88 249 0.25 Comparative Example 3 76.8 137.2 2.91 232 0.48 Comparative Example 4 95.9 157.8 2.85 243 0.24 Comparative Example 5 71.3 115.6 1.81 228 0.40 Comparative Example 6 91.4 160.9 2.64 245 0.19 Comparative Example 7 80.7 142.4 2.52 241 0.33 Comparative Example 8 86.1 146.8 2.65 258 0.22

[0077] As can be seen from the data in Table 1, the thermosetting resin material for sealing semiconductor chips prepared by the present invention has excellent spiral flow length, flexural strength, thermal conductivity, glass transition temperature and low water absorption.

[0078] The thermosetting resin material for sealing semiconductor chips prepared by this invention exhibits excellent performance, mainly due to the synergistic enhancement of the co-crosslinking structure of the resin matrix and modified benzoxazine, the surface-modified inorganic filler, and the interfacial coupling effect. Under the action of curing accelerator and heating, the modified benzoxazine undergoes ring-opening and reacts with linear phenolic resin and epoxy resin to form a multi-layered co-crosslinking network structure, which improves the crosslinking density and structural integrity of the resin system, thereby increasing the glass transition temperature and flexural strength of the material.

[0079] The modified benzoxazine prepared in this invention uses cyclotrisiloxane as its structural core and introduces long-chain alkyl groups to further improve the properties of the resin matrix. The cyclotrisiloxane structure has high Si-O bond energy, exhibiting good thermo-oxidative stability. As a heat-resistant structural unit embedded in the curing network, it improves the material's heat resistance. The internal plasticizing effect of the long-chain alkyl groups reduces the viscosity of the system in the molten state, improving the material's flowability. Furthermore, the long-chain alkyl groups can form molecular chain entanglements with the toughening rubber component, improving flexural strength by enhancing interfacial compatibility. In addition, the hydrophobic siloxane core and the long-chain alkyl groups together construct a low surface energy shielding layer. Combined with the compression of free volume by the dense cross-linked network, this effectively hinders the penetration and diffusion of water molecules, thus endowing the encapsulation material with extremely low moisture absorption.

[0080] Alumina possesses excellent thermal conductivity, insulation, and low thermal expansion characteristics; plate-like boron nitride exhibits high in-plane thermal conductivity. When combined, the granular alumina fills the gaps between boron nitride plates, promoting filler overlap, constructing a continuous three-dimensional thermally conductive network, reducing phonon transmission resistance, and mitigating the problem of decreased thermal conductivity caused by uneven filler dispersion. This invention utilizes the hydrolysis of 3-glycidoxypropyltrimethoxysilane under acidic conditions to generate silanol groups, which then condense with hydroxyl or active groups on the surfaces of alumina and modified boron nitride to form an organosilane layer on the filler surface. Its epoxy end groups participate in resin crosslinking during subsequent curing, forming a chemical bridge between the inorganic filler and the organic matrix, improving filler dispersibility, enhancing interfacial bonding strength, and reducing interfacial thermal resistance.

[0081] Comparative Example 1 used a modified benzoxazine that replaced cyclic siloxanes with linear siloxanes, which disrupted the rigidity of the modified benzoxazine molecular skeleton. The two-arm structure also led to a decrease in the crosslinking network density, resulting in a lower glass transition temperature. Comparative Example 2 used a modified benzoxazine with a four-arm structure, which resulted in excessive crosslinking and degraded performance. Comparative Example 7 used unmodified boron nitride, lacking active functional groups such as hydroxyl groups. This made it difficult for the silane coupling agent to chemically graft onto its surface, leading to uneven dispersion of boron nitride in the organic resin matrix. This resulted in insufficient thermal conductivity and also created mechanical defects in the resin matrix, causing a decrease in the material's flexural strength. Comparative Example 8 used an excessive amount of two-dimensional lamellar boron nitride and reduced spherical alumina. Although boron nitride has excellent thermal conductivity, the high proportion of lamellar filler reduced dimensional complementarity, leading to decreased thermal conductivity.

[0082] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention. However, any modifications, alterations, and variations made by those skilled in the art without departing from the scope of the present invention based on the disclosed technical content are equivalent embodiments of the present invention. Furthermore, any modifications, alterations, and variations made to the above embodiments based on the essential technology of the present invention are still within the protection scope of the present invention.

Claims

1. A thermosetting resin material for sealing semiconductor chips, characterized in that, The ingredients include the following parts by weight: 50-60 parts epoxy resin, 10-15 parts modified benzoxazine, 4-6 parts toughening agent, 250-300 parts inorganic filler, 10-15 parts silane coupling agent, 1-2 parts release agent, 25-30 parts curing agent, and 0.5-0.8 parts curing accelerator; The modified benzoxazine has the following structural formula: 。 2. The thermosetting resin material for sealing semiconductor chips according to claim 1, characterized in that, The inorganic filler is composed of alumina and modified boron nitride mixed in a mass ratio of (3-4):

1.

3. The thermosetting resin material for sealing semiconductor chips according to claim 2, characterized in that, The modified boron nitride is prepared by the following method: The modified boron nitride was obtained by mixing sodium hydroxide solution with boron nitride, heating and stirring, filtering, washing and drying.

4. The thermosetting resin material for sealing semiconductor chips according to claim 1, characterized in that, The toughening agent is nitrile rubber.

5. The thermosetting resin material for sealing semiconductor chips according to claim 1, characterized in that, The release agent is carnauba wax.

6. The thermosetting resin material for sealing semiconductor chips according to claim 1, characterized in that, The curing agent is a linear phenolic resin.

7. The thermosetting resin material for sealing semiconductor chips according to claim 1, characterized in that, The curing accelerator is one of 2-methylimidazole and 2-phenylimidazole.

8. The thermosetting resin material for sealing semiconductor chips according to claim 1, characterized in that, The silane coupling agent is 3-glycidoxypropyltrimethoxysilane.

9. The thermosetting resin material for sealing semiconductor chips according to claim 1, characterized in that, The modified benzoxazine was prepared by the following method: S1: 4-Allyl-2-methoxyphenol reacts with methyl-hydro-cyclic siloxane to give intermediate A. S2: Intermediate A reacts with hexadecylamine under the action of paraformaldehyde to obtain modified benzoxazine.

10. A method for preparing a thermosetting resin material for sealing semiconductor chips according to any one of claims 1-9, characterized in that, Includes the following steps: (1) Weigh out the following components by weight: 50-60 parts epoxy resin, 10-15 parts modified benzoxazine, 4-6 parts toughening agent, 250-300 parts inorganic filler, 10-15 parts silane coupling agent, 1-2 parts release agent, 25-30 parts curing agent, and 0.5-0.8 parts curing accelerator; (2) Mix the ethanol aqueous solution, silane coupling agent and inorganic filler evenly, adjust the pH to 4-5 with acid, heat the reaction, filter and dry to obtain the modified filler; (3) Mix epoxy resin, modified benzoxazine, toughening agent, modified filler, release agent, curing agent and curing accelerator evenly, add to twin screw extruder, extrude and mold, crush and sieve to obtain thermosetting resin material for semiconductor chip sealing.

Images