A wind turbine generator converter IGBT detection method and system
By integrating IGBT testing devices and using different test command driving methods, the problems of high cost, large size, and low efficiency of existing IGBT testing equipment have been solved, enabling efficient and comprehensive performance testing and fault diagnosis at wind power sites.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- LONGYUAN RUDONG WIND POWER GENERATION
- Filing Date
- 2026-05-07
- Publication Date
- 2026-06-23
AI Technical Summary
Existing IGBT testing equipment is costly, bulky, and has complex wiring, making it inconvenient for use in wind power sites. It also has low testing efficiency, making it difficult to achieve rapid batch screening and failing to fully cover key dimensions, resulting in incomplete and untimely fault diagnosis.
An integrated IGBT testing device is provided, comprising a controller and a testing module. Different testing units are driven by different test commands to achieve automated and efficient testing of static and dynamic parameters. Components such as the Arduino Uno controller and ADS1115 digital-to-analog converter are used to obtain the static and dynamic parameters of the IGBT.
It enables efficient and comprehensive performance testing and fault diagnosis of IGBTs in the field environment of wind farms, overcoming the shortcomings of existing technologies such as large and expensive equipment, inconvenience of field use, and low testing efficiency.
Smart Images
Figure CN122260068A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of power electronics technology, and in particular to a method and system for detecting IGBTs in wind turbine converters. Background Technology
[0002] IGBT (Insulated Gate Bipolar Transistor) is the core power switching device in wind turbine converters. It operates under harsh conditions such as high voltage, high current, high frequency switching, strong vibration and wide temperature range for a long time, which can easily lead to faults such as gate circuit abnormality, drive circuit damage, temperature sensor failure and switching characteristic degradation, directly affecting the reliable operation of the converter.
[0003] Currently, the performance of IGBTs is mainly tested using specialized equipment such as oscilloscopes and transistor curve tracers. However, these methods have the following limitations: the equipment is expensive, bulky, and has complex wiring, making it inconvenient for use in wind power sites; the testing efficiency is low, making it difficult to achieve rapid batch screening; and most solutions only test a single parameter or function, failing to comprehensively cover key dimensions such as gate, drive, temperature, and dynamic switching characteristics, resulting in incomplete and untimely fault diagnosis.
[0004] Therefore, how to achieve efficient and integrated detection of various types of IGBT faults in the field environment of wind farms has become a key technical issue for improving the reliability of unit operation and reducing operation and maintenance costs. Summary of the Invention
[0005] To address the aforementioned issues, this application provides a method for detecting IGBTs in wind turbine converters, enabling efficient and integrated detection of various types of IGBT faults in a wind farm environment.
[0006] The embodiments of this application disclose the following technical solutions: This application provides a method for testing the performance of IGBTs in wind turbine converters, applied to an IGBT testing device; the IGBT testing device includes a controller and a testing module; the testing module includes a first IGBT testing unit and a second IGBT testing unit; the testing module is communicatively connected to the controller; the testing module is connected to a target IGBT; the method includes: In response to a first target test command to test the target IGBT, a constant voltage drive signal is sent to the first IGBT detection unit through the controller; or, in response to a second target test command to test the target IGBT, a square wave drive signal is sent to the second IGBT detection unit through the controller. After the first IGBT detection unit receives the constant voltage drive signal, it acquires the static parameters of the target IGBT; or, after the second IGBT detection unit receives the square wave drive signal, it acquires the dynamic parameters of the target IGBT. The static parameters include gate turn-on resistance, gate turn-off resistance, and temperature resistance; the dynamic parameters include collector-emitter voltage, gate-emitter voltage, and collector current. The performance of the target IGBT is analyzed based on the dynamic parameters or the static parameters.
[0007] In one optional implementation, the first IGBT detection unit includes: an Arduino Uno controller, a first ADS1115 digital-to-analog converter, and three reference resistors; the three reference resistors include a first reference resistor, a second reference resistor, and a third reference resistor; The Arduino Uno controller is connected to the first ADS1115 digital-to-analog converter via an I2C bus; The first terminal of the first reference resistor, the first terminal of the second reference resistor, and the first terminal of the third reference resistor are all connected to the first pin of the Arduino Uno controller; the first pin is used to output zero volts. The second terminal of the first reference resistor is connected to the first target pin of the target IGBT; the second terminal of the second reference resistor is connected to the second target pin of the target IGBT; the second terminal of the first three reference resistors is connected to the third target pin of the target IGBT; the first target pin is the gate of the target IGBT; the second target pin is the emitter of the target IGBT; the third target pin is the temperature detection terminal of the target IGBT. The fourth, fifth, and sixth target pins of the target IGBT are all connected to the GND pin of the first ADS1115 digital-to-analog converter, and also to the AIN3 pin of the first ADS1115 digital-to-analog converter, and to the 5V output pin of the Arduino Uno controller; the fourth target pin is the common drive terminal of the target IGBT corresponding to the gate; the fifth target pin is the common power terminal of the target IGBT corresponding to the emitter; the sixth target pin is the common terminal of the target IGBT temperature sensor. The second end of the first reference resistor is connected to the AIN0 pin of the first ADS1115 digital-to-analog converter; the second end of the second reference resistor is connected to the AIN1 pin of the first ADS1115 digital-to-analog converter; and the second end of the third reference resistor is connected to the AIN2 pin of the first ADS1115 digital-to-analog converter.
[0008] In one optional implementation, obtaining the static parameters of the target IGBT through the first IGBT detection unit includes: The Arduino Uno controller outputs a five-volt voltage to the three reference resistors. The first ADS1115 digital-to-analog converter acquires the first voltage value of the second terminal of the first reference resistor relative to the fourth target pin, the second voltage value of the second terminal of the second reference resistor relative to the fifth target pin, and the third voltage value of the second terminal of the third reference resistor relative to the sixth target pin. Based on the first voltage value and the known resistance value of the first reference resistor, the static resistance corresponding to the first target pin is calculated using Ohm's law and used as the gate turn-on resistance; Based on the second voltage value and the known resistance value of the second reference resistor, the static resistance corresponding to the second target pin is calculated using Ohm's law and used as the gate turn-off resistance; Based on the third voltage value and the known resistance value of the third reference resistor, the static resistance corresponding to the third target pin is calculated using Ohm's law, and used as the temperature resistance.
[0009] In one optional implementation, the second IGBT detection unit includes: the Arduino Uno controller, the second ADS1115 digital-to-analog converter, the IR2110 driver chip, the first relay, the second relay, the shunt resistor, the load resistor, the first power supply, and the second power supply; The Arduino Uno controller is connected to the second ADS1115 digital-to-analog converter via an I2C bus. The GND pin and AIN3 pin of the second ADS1115 digital-to-analog converter are both connected to the output five-volt voltage pin of the Arduino Uno controller; The AIN0 pin of the second ADS1115 digital-to-analog converter is connected to the first target node; the first target node is a point on the connection line between the second end of the first voltage divider resistor and the first end of the second voltage divider resistor; the first end of the first voltage divider resistor is connected to one end of the CCU of the target IGBT, and the second end of the second voltage divider resistor is connected to one end of the CEU of the target IGBT; the ratio of the first voltage divider resistor to the second voltage divider resistor is 10:1. The AIN1 pin of the second ADS1115 digital-to-analog converter is connected to the second target node; the second target node is a point on the connection line between the second end of the third voltage divider resistor and the first end of the fourth voltage divider resistor; the first end of the third voltage divider resistor is connected to one end of the first AGU of the target IGBT; the second end of the fourth voltage divider resistor is connected to one end of the AEU of the target IGBT; the ratio of the third voltage divider resistor to the fourth voltage divider resistor is 10:1; The AIN2 pin of the second ADS1115 digital-to-analog converter is connected to the third target node; the third target node is the intersection point with the first end of the shunt resistor, one end of the AEU, one end of the BEU, and one end of the CEU; The second end of the shunt resistor is connected in series with the second relay, the second power supply, the first relay, and the second end of the load resistor; the first end of the load resistor is connected to the fourth target node; the fourth target node is the intersection of one end of the CCU, one end of the BCU, and one end of the ACU of the target IGBT. The positive terminal of the first power supply is connected to the VCC pin of the IR2110 driver chip and to the gate drive signal input terminal in the target IGBT; the negative terminal of the first power supply is connected to the GND pin of the IR2110 driver chip. The HO pin of the IR2110 driver chip is connected to the gate of the target IGBT, and the VS pin of the IR2110 driver chip is connected to the emitter of the target IGBT; the PWM input pin of the IR2110 driver chip is connected to the Arduino Uno controller. The first digital port of the Arduino Uno controller is connected to the first relay; the second digital port of the Arduino Uno controller is connected to the second relay.
[0010] In one optional implementation, obtaining the dynamic parameters of the target IGBT through the second IGBT detection unit includes: The first relay is closed by controlling the first digital input port of the Arduino Uno controller, and the second relay is closed by controlling the second digital input port of the Arduino Uno controller. The Arduino Uno controller sends a high-level signal to the PWM input pin of the IR2110 driver chip to drive the target IGBT into the conduction state. After the target IGBT enters the conduction state, the collector-emitter voltage, gate-emitter voltage, and collector current of the target IGBT are acquired by the second ADS1115 digital-to-analog converter as the first dynamic data. The first dynamic data is used to verify the conduction function of the target IGBT. The Arduino Uno controller sends a low-level signal to the PWM input pin of the IR2110 driver chip to drive the target IGBT into the off state. After the target IGBT enters the off state, the collector-emitter voltage, gate-emitter voltage, and collector current of the target IGBT are acquired by the second ADS1115 digital-to-analog converter as second state data. The second dynamic data is used to verify the turn-off function of the target IGBT.
[0011] In one optional implementation, obtaining the dynamic parameters of the target IGBT through the second IGBT detection unit includes: Keep both the first relay and the second relay in the closed state; The target square wave is configured through the PWM pin of the Arduino Uno controller and sent to the PWM input of the IR2110 driver chip; the frequency of the target square wave is between 500Hz and 20kHz, and the duty cycle of the target square wave is between 0% and 100%. After receiving the target square wave, the target IGBT collects the collector-emitter voltage, gate-emitter voltage, and collector current of the target IGBT during the PWM cycle through the second ADS1115 digital-to-analog converter, as the third dynamic data; the third dynamic data is used to verify the dynamic response characteristics of the target IGBT under actual operating conditions.
[0012] In one optional implementation, the IGBT detection device further includes a device protection unit; One end of the device protection unit is connected to the Arduino Uno controller, and the other end of the device protection unit is connected to the second power supply; The device protection unit is used to perform a stop operation when it detects hardware overcurrent, software overcurrent, or abnormal operation of the Arduino Uno controller.
[0013] A second aspect of this application provides a wind turbine converter IGBT performance testing system, which includes a host computer and an IGBT testing device; the IGBT testing device includes a controller and a testing module; the testing module includes a first IGBT testing unit and a second IGBT testing unit; the testing module is communicatively connected to the controller; the testing module is connected to the target IGBT. The host computer is used to respond to the test mode selection and start operation triggered by the user through the human-computer interaction interface, and send the first target test instruction to the IGBT detection device, or send the second target test instruction to the IGBT detection device. The IGBT testing device is used to send a constant voltage drive signal to the first IGBT testing unit through the controller when receiving the first target test command; or, after receiving the second target test command, send a square wave drive signal to the second IGBT testing unit through the controller. The IGBT detection device is further configured to, after the first IGBT detection unit receives the constant voltage drive signal, obtain the static parameters of the target IGBT through the first IGBT detection unit; or, after the second IGBT detection unit receives the square wave drive signal, obtain the dynamic parameters of the target IGBT through the second IGBT detection unit; the static parameters include gate turn-on resistance, gate turn-off resistance, and temperature resistance; the dynamic parameters include collector-emitter voltage, gate-emitter voltage, collector current, and the real-time temperature of the target IGBT; The host computer is also used to analyze the performance of the target IGBT based on the dynamic parameters or the static parameters.
[0014] In one optional implementation, the host computer is further configured to generate a test report; the test report includes at least: the identification information of the target IGBT, the comparison results of the test values of static parameters and standard static parameter test values, the comparison results of the test values of dynamic parameters and standard dynamic parameter test values, the judgment conclusion of the target IGBT, and the test timestamp.
[0015] Compared with the prior art, this application has the following beneficial effects: This application provides an integrated testing device (including a controller, a first IGBT testing unit, and a second IGBT testing unit) and employs a method that drives different testing units to perform specific tests based on different test commands. This achieves automated, efficient, and comprehensive testing of both static and dynamic parameters of IGBTs. It overcomes the technical shortcomings of existing technologies, such as bulky and expensive equipment, inconvenience in field use, low testing efficiency, and limited functionality. It enables efficient and comprehensive performance testing and fault diagnosis of IGBTs in field environments such as wind farms. Attached Figure Description
[0016] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0017] Figure 1 This is a schematic diagram of the structure of an IGBT detection device provided in an embodiment of this application; Figure 2A This is a schematic diagram of the structure of the first part of a first IGBT detection unit provided in an embodiment of this application; Figure 2B This is a schematic diagram of the structure of the second part of a first IGBT detection unit provided in an embodiment of this application; Figure 3A This is a schematic diagram of the structure of the first part of a second IGBT detection unit provided in an embodiment of this application; Figure 3B This is a schematic diagram of the structure of the second part of a second IGBT detection unit provided in an embodiment of this application; Figure 4 A flowchart illustrating an IGBT detection method provided in this application embodiment; Figure 5 This is a schematic diagram of the structure of a wind turbine converter IGBT detection system provided in an embodiment of this application. Detailed Implementation
[0018] IGBT (Insulated Gate Bipolar Transistor) is the core power switching device in wind turbine converters. It operates under harsh conditions such as high voltage, high current, high frequency switching, strong vibration and wide temperature range for a long time, which can easily lead to faults such as gate circuit abnormality, drive circuit damage, temperature sensor failure and switching characteristic degradation, directly affecting the reliable operation of the converter.
[0019] Currently, the performance of IGBTs is mainly tested using specialized equipment such as oscilloscopes and transistor curve tracers. However, these methods have the following limitations: the equipment is expensive, bulky, and has complex wiring, making it inconvenient for use in wind power sites; the testing efficiency is low, making it difficult to achieve rapid batch screening; and most solutions only test a single parameter or function, failing to comprehensively cover key dimensions such as gate, drive, temperature, and dynamic switching characteristics, resulting in incomplete and untimely fault diagnosis.
[0020] Therefore, how to achieve efficient and integrated detection of various types of IGBT faults in the field environment of wind farms has become a key technical issue for improving the reliability of unit operation and reducing operation and maintenance costs.
[0021] Based on this, this application provides a method for testing the performance of IGBTs in wind turbine converters, applied to an IGBT testing device. The IGBT testing device includes a controller and a testing module. The testing module includes a first IGBT testing unit and a second IGBT testing unit. The testing module is communicatively connected to the controller. The testing module is connected to a target IGBT. The method includes: in response to a first target test command to test the target IGBT, sending a constant voltage drive signal to the first IGBT testing unit through the controller; or, in response to a second target test command to test the target IGBT, sending a square wave drive signal to the second IGBT testing unit through the controller; after receiving the constant voltage drive signal, the first IGBT testing unit obtains the static parameters of the target IGBT through the first IGBT testing unit; or, after receiving the square wave drive signal, the second IGBT testing unit obtains the dynamic parameters of the target IGBT through the second IGBT testing unit; and analyzing the performance of the target IGBT based on the dynamic or static parameters.
[0022] This application provides an integrated testing device (including a controller, a first IGBT testing unit, and a second IGBT testing unit) and employs a method that drives different testing units to perform specific tests based on different test commands. This achieves automated, efficient, and comprehensive testing of both static and dynamic parameters of IGBTs. It overcomes the technical shortcomings of existing technologies, such as bulky and expensive equipment, inconvenience in field use, low testing efficiency, and limited functionality. It enables efficient and comprehensive performance testing and fault diagnosis of IGBTs in field environments such as wind farms.
[0023] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present application, and not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present application.
[0024] Figure 1 This is a schematic diagram of an IGBT detection device provided in an embodiment of this application. Figure 1 As shown, the IGBT detection device 100 of this application includes: a controller 101 and a detection module 102.
[0025] The detection module 102 includes a first IGBT detection unit 1021 and a second IGBT detection unit 1022; the detection module 102 is communicatively connected to the controller 101; and the detection module 102 is connected to the target IGBT. The target IGBT in this application is the IGBT to be subjected to performance testing.
[0026] For example, the detection module 102 in this application is connected to the target IGBT via a test port. If the target IGBT needs to be tested using the first IGBT detection unit, the port of the first IGBT detection unit is connected to the corresponding static test pin of the target IGBT; if the target IGBT needs to be tested using the second IGBT detection unit, the port of the second IGBT detection unit is connected to the corresponding dynamic test pin of the target IGBT.
[0027] Figure 2A This is a schematic diagram of the structure of the first part of a first IGBT detection unit provided in an embodiment of this application; Figure 2B This is a schematic diagram of the structure of the second part of a first IGBT detection unit provided in an embodiment of this application. Figure 2A and Figure 2B Taking the Arduino Uno controller and the ADS1115 digital-to-analog converter as examples, this paper introduces the specific hardware configuration and electrical connection relationship of the first IGBT detection unit. Figure 2A Connect wire ① in Figure 2 to wire ① in Figure 2(b). Figure 2A wire ③ in Figure 2B Wire ③ in the middle is connected. Figure 2A wire ④ in Figure 2B Connect wire ④ in the middle.
[0028] Combination Figure 2A and Figure 2BAs shown, the first IGBT detection unit includes: an Arduino Uno controller, a first ADS1115 digital-to-analog converter, and three reference resistors; the three reference resistors include a first reference resistor, a second reference resistor, and a third reference resistor. The Arduino Uno controller communicates with the first ADS1115 digital-to-analog converter via an I2C bus; the first terminals of the first, second, and third reference resistors are all connected to the first pin of the Arduino Uno controller; the first pin is used to output a zero-volt voltage.
[0029] Combination Figure 2A and Figure 2B As shown, the second end of the first reference resistor is connected to the first target pin of the target IGBT (pin number 3 in P1 of the IGBT module); the second end of the second reference resistor is connected to the second target pin of the target IGBT (pin number 5 in P1 of the IGBT module); the second end of the third reference resistor is connected to the third target pin of the target IGBT (pin number 7 in P1 of the IGBT module); the first target pin is the gate of the target IGBT; the second target pin is the emitter of the target IGBT; and the third target pin is the temperature detection terminal of the target IGBT.
[0030] Combination Figure 2A and Figure 2B As shown, the fourth target pin (pin number 4 in P1 of the IGBT module), the fifth target pin (pin number 6 in P1 of the IGBT module), and the sixth target pin (pin number 8 in P1 of the IGBT module) of the target IGBT are all connected to the GND pin of the first ADS1115 digital-to-analog converter, and are also connected to the AIN3 pin of the first ADS1115 digital-to-analog converter, and to the 5V output pin of the Arduino Uno controller. Specifically, the fourth target pin is the common drive terminal corresponding to the gate of the target IGBT; the fifth target pin is the common power terminal corresponding to the emitter of the target IGBT; and the sixth target pin is the common terminal for the temperature sensor of the target IGBT. Combination Figure 2A and Figure 2B As shown, the second end of the first reference resistor is connected to the AIN0 pin of the first ADS1115 digital-to-analog converter; the second end of the second reference resistor is connected to the AIN1 pin of the first ADS1115 digital-to-analog converter; and the second end of the third reference resistor is connected to the AIN2 pin of the first ADS1115 digital-to-analog converter.
[0031] Figure 3A This is a schematic diagram of the structure of the first part of a second IGBT detection unit provided in an embodiment of this application; Figure 3BThis is a schematic diagram of the structure of the second part of a second IGBT detection unit provided in an embodiment of this application. Figure 3A and Figure 3B Using the Arduino Uno controller, the ADS1115 digital-to-analog converter, and the IR2110 as the gate driver chip as examples, this paper introduces the specific hardware configuration and electrical connections of the second IGBT detection unit. Figure 3A and Figure 3B Connect using wires of corresponding colors; for example, Figure 3A The blue wire in the middle and Figure 3B The blue wires are connected; Figure 3A The red wire in the middle and Figure 3B The red wires are connected.
[0032] Combination Figure 3A and Figure 3B As shown, the second IGBT detection unit includes an Arduino Uno controller, a second ADS1115 digital-to-analog converter, an IR2110 driver chip, a first relay, a second relay, a shunt resistor, a load resistor, a first power supply (power supply 1), a second power supply (power supply 2), a first voltage divider resistor, a second voltage divider resistor, a third voltage divider resistor, and a fourth voltage divider resistor; the ratio of the first voltage divider resistor to the second voltage divider resistor is 10:1; the ratio of the third voltage divider resistor to the fourth voltage divider resistor is 10:1. The first voltage divider resistor, the second voltage divider resistor, the third voltage divider resistor, and the fourth voltage divider resistor are represented by numbers 1-4 in Figure 3.
[0033] Combination Figure 3A and Figure 3B As shown, the Arduino Uno controller is connected to the second ADS1115 digital-to-analog converter via the I2C bus; the GND pin and AIN3 pin of the second ADS1115 digital-to-analog converter are both connected to the output five-volt pin of the Arduino Uno controller.
[0034] In this configuration, the AIN0 pin of the second ADS1115 digital-to-analog converter is connected to the first target node; the first target node is a point on the connection line between the second end of the first voltage divider resistor and the first end of the second voltage divider resistor; the first end of the first voltage divider resistor is connected to one end of the CCU of the target IGBT, and the second end of the second voltage divider resistor is connected to one end of the CEU of the target IGBT.
[0035] In this configuration, the AIN1 pin of the second ADS1115 digital-to-analog converter is connected to the second target node; the second target node is a point on the connection line between the second end of the third voltage divider resistor and the first end of the fourth voltage divider resistor; the first end of the third voltage divider resistor is connected to one end of the first AGU of the target IGBT; and the second end of the fourth voltage divider resistor is connected to one end of the AEU of the target IGBT.
[0036] The AIN2 pin of the second ADS1115 digital-to-analog converter is connected to the third target node; the third target node is the junction of the first end of the shunt resistor, one end of the AEU, one end of the BEU, and one end of the CEU.
[0037] The second end of the shunt resistor is connected in series with the second relay, the second power supply, the first relay, and the second end of the load resistor; the first end of the load resistor is connected to the fourth target node; the fourth target node is the intersection of one end of the CCU, one end of the BCU, and one end of the ACU of the target IGBT.
[0038] Among them, the positive terminal of the first power supply and the VCC pin of the IR2110 driver chip ( Figure 3A The IR2110 driver module has a pin marked 12V connected to it, and is also connected to the gate drive signal input terminal of the target IGBT. Figure 3B The pin numbered 3 on the P1 of the target IGBT is connected; the negative terminal of the first power supply is connected to the GND pin of the IR2110 driver chip.
[0039] Among them, the HO pin of the IR2110 driver chip ( Figure 3A The pin marked HO1 on the IR2110 driver module is connected to the gate of the target IGBT. Figure 3B Connect pin 4 on P1 of the target IGBT to the VS pin of the IR2110 driver chip. Figure 3A The pin labeled VS1 on the IR2110 driver module is connected to the emitter of the target IGBT. Figure 3B Connect pin number 2 on P1 of the target IGBT; connect the PWM input pin of the IR2110 driver chip ( Figure 3A The PWM1 pin on the IR2110 driver module is connected to the Arduino Uno controller.
[0040] The first digital input port of the Arduino Uno controller is connected to the first relay; the second digital input port of the Arduino Uno controller is connected to the second relay.
[0041] Table 1 is a hardware list of the IGBT testing device provided in the embodiments of this application, which lists the model, parameters, quantity and main functions of the core components in the testing device. The power supply row in Table 1 corresponds to the "first power supply" (power supply 1, 12-15V / 2A) and "second power supply" (power supply 2, 5V / 3A) in Figure 3.
[0042] Table 2 defines the pin functions of the Arduino Uno; it lists the detailed interface configuration for signal interaction between the Arduino Uno controller and the detection module (including drivers, relays, protection circuits, and ADC) in the embodiments of this application, and clarifies the logical functions and signal flow of each pin in IGBT static and dynamic testing.
[0043] Table 3 shows the pinout of the IR2100 driver module; Table 3 also shows the specific connection methods, voltage ranges, and core functions of each pin in the IGBT dynamic test circuit.
[0044] Table 4 shows the ADS1115 addresses and channels, which lists the I2C address allocations of the four ADS1115 analog-to-digital converters in this application and the mapping relationship of the physical signal channels they are responsible for acquiring.
[0045] Table 1
[0046] Table 2
[0047] Table 3
[0048] Table 4
[0049] Below, with Figure 1 , Figure 2A , Figure 2B , Figure 3A and Figure 3B Taking the IGBT testing device shown in the figure as an example, the IGBT testing method for wind turbine converters provided in this application will be described in detail.
[0050] Figure 4 This is a flowchart illustrating an IGBT detection method provided in an embodiment of this application. (In conjunction with...) Figure 2A and Figure 2B As shown, the IGBT detection method in this application includes: S401, in response to a first target test command to test the target IGBT, a constant voltage drive signal is sent to the first IGBT detection unit through the controller; or, in response to a second target test command to test the target IGBT, a square wave drive signal is sent to the second IGBT detection unit through the controller.
[0051] During use, the controller responds to the test mode selection and start operation triggered by the user through the host computer, and sends the corresponding drive signal to the designated detection unit according to the selected mode.
[0052] For example, when the user triggers the first target test command (static test), the controller sends a constant voltage drive signal to the first IGBT detection unit (i.e., the static test unit). This signal is typically a constant +5V DC voltage, used to provide a known and stable measurement power supply for the static resistance measurement circuit.
[0053] For example, when a user triggers a second target test command (dynamic test), the controller sends a square wave drive signal to the second IGBT detection unit (i.e., the dynamic test unit) to drive the target IGBT to perform a rapid switching action.
[0054] S402, after the first IGBT detection unit receives the constant voltage drive signal, the static parameters of the target IGBT are obtained through the first IGBT detection unit; or, after the second IGBT detection unit receives the square wave drive signal, the dynamic parameters of the target IGBT are obtained through the second IGBT detection unit.
[0055] The static parameters of the target IBGT include gate turn-on resistance, gate turn-off resistance, and temperature resistance. Combined with... Figure 2A and Figure 2B The steps for testing the static parameters of the target IGBT are as follows: The first step is to output a five-volt voltage to the three reference resistors using the Arduino Uno controller.
[0056] The second step involves using a first ADS1115 digital-to-analog converter to acquire the first voltage value of the second terminal of the first reference resistor relative to the fourth target pin, the second voltage value of the second terminal of the second reference resistor relative to the fifth target pin, and the third voltage value of the second terminal of the third reference resistor relative to the sixth target pin.
[0057] The third step involves calculating the static resistance of the first target pin based on the known resistance values of the first voltage and the first reference resistor, using Ohm's law, and using this static resistance as the gate turn-on resistance.
[0058] The fourth step is to calculate the static resistance corresponding to the second target pin, which will serve as the gate turn-off resistance.
[0059] The fifth step involves calculating the static resistance of the third target pin based on the known resistance values of the third voltage and the third reference resistor, using Ohm's law, and using this static resistance as the temperature resistance.
[0060] The dynamic parameters of the target IGBT include collector-emitter voltage, gate-emitter voltage, and collector current. The acquisition of these dynamic parameters is accomplished through two progressive core test procedures: power-on and power-off function testing and PWM dynamic switching testing. The power-on and power-off function testing aims to verify the electrical connection integrity of the drive circuit and the basic switching function of the IGBT device; the PWM dynamic switching test aims to simulate the actual high-frequency switching operating conditions of a wind power converter, comprehensively evaluating the IGBT's dynamic response speed, switching losses, and waveform quality.
[0061] In one alternative implementation, the specific process for testing the power-on and power-off functions is as follows: The first step is to control the first relay to close via the first digital input port of the Arduino Uno controller, and to control the second relay to close via the second digital input port of the Arduino Uno controller.
[0062] The second step involves sending a high-level signal to the PWM input pin of the IR2110 driver chip via the Arduino Uno controller to drive the target IGBT into the conduction state. After the target IGBT enters the conduction state, the collector-emitter voltage, gate-emitter voltage, and collector current of the target IGBT are acquired by the second ADS1115 digital-to-analog converter as the first dynamic data. The first dynamic data is used to verify the conduction function of the target IGBT.
[0063] Third, the Arduino Uno controller sends a low-level signal to the PWM input pin of the IR2110 driver chip to drive the target IGBT into the off state. After the target IGBT enters the off state, the collector-emitter voltage, gate-emitter voltage, and collector current of the target IGBT are acquired by the second ADS1115 digital-to-analog converter as second state data. The second dynamic data is used to verify the turn-off function of the target IGBT.
[0064] Specifically, the host computer, through the controller (Arduino Uno) and the IR2110 driver chip, sequentially applies continuous high-level and low-level drive signals to the gate of the target IGBT, forcing it to enter stable on and off states respectively.
[0065] During this process, the host computer synchronously acquires and records the collector-emitter saturation voltage drop, gate-emitter drive voltage, and collector load current of the target IGBT in the on-state using a high-precision analog-to-digital converter (ADS1115), and the collector-emitter withstand voltage, gate-emitter turn-off voltage, and collector leakage current in the off-state. By comparing and analyzing these two sets of status data, the host computer can automatically determine whether the drive signal transmission is normal and whether the IGBT can achieve reliable low-dropout conduction and complete high-voltage isolation turn-off, thereby completing the verification of the basic functionality of the "drive-power" circuit.
[0066] In one alternative implementation, the specific process of PWM dynamic switching testing is as follows: The first step is to keep both the first relay and the second relay in the closed state.
[0067] The second step is to configure the target square wave through the PWM pin of the Arduino Uno controller and send the target square wave to the PWM input terminal of the IR2110 driver chip; the frequency of the target square wave is between 500Hz and 20kHz, and the duty cycle of the target square wave is between 0% and 100%.
[0068] Third, after receiving the target square wave, the target IGBT collects the collector-emitter voltage, gate-emitter voltage, and collector current of the target IGBT during the PWM cycle through the second ADS1115 digital-to-analog converter, as the third dynamic data; the third dynamic data is used to verify the dynamic response characteristics of the target IGBT under actual operating conditions.
[0069] Specifically, while ensuring the safe closure of the main power circuit, the controller generates a pulse width modulation (PWM) waveform with a continuously adjustable frequency from 500 Hz to 20 kHz and a linearly adjustable duty cycle from 0% to 100%. This waveform is then amplified by the IR2110 driver chip to drive the target IGBT for high-frequency switching. Throughout the entire PWM operating cycle, a high-precision analog-to-digital converter captures the complete dynamic waveforms of the target IGBT's collector-emitter voltage, gate-emitter voltage, and collector current in real time.
[0070] Based on these high-fidelity dynamic waveform data, the host computer can further analyze and calculate the key dynamic performance indicators of the IGBT, such as turn-on delay time, turn-off delay time, voltage and current rise / fall time, energy loss during switching, and whether there are abnormal phenomena such as overshoot and oscillation in the waveform. This allows for a precise assessment of its switching characteristics, efficiency, and reliability under actual complex operating conditions.
[0071] S403, Analyze the performance of the target IGBT based on the dynamic parameters or the static parameters.
[0072] Specifically, based on the collected dynamic and static parameters, a comprehensive and hierarchical analysis and diagnosis of the target IGBT's performance can be performed. The diagnostic process includes three stages: static parameter evaluation, dynamic function verification, and comprehensive performance judgment. Each stage compares the measured data with preset fault characteristic thresholds and standard waveform libraries to achieve automated reasoning from physical parameter measurement to health status determination.
[0073] The evaluation of static parameters in this application focuses on the gate circuit and temperature sensing function of the IGBT.
[0074] First, compare the measured gate turn-on resistance and gate turn-off resistance with the standard range (usually 5 kΩ to 50 kΩ). If the resistance value is significantly higher than the upper limit (e.g., >1 megohm), it can be determined that the gate is open or the gate resistor is poorly soldered; if the resistance value is significantly lower than the lower limit (e.g., <100 ohms), it indicates a partial short circuit between the gate and emitter or an abnormal short circuit in the gate drive circuit.
[0075] Secondly, the resistance value measured by the temperature detection terminal is converted into a temperature value and compared with the ambient temperature and the module's rated thermal resistance curve. If the temperature resistance value is infinite or close to zero, it is directly determined that the temperature sensor (NTC) is open or short-circuited. If the converted temperature deviates significantly from the current power consumption conditions (such as a temperature rise exceeding 20K under static conditions), it indicates that the heat dissipation interface is aging or the junction thermal resistance is increasing.
[0076] Static testing can quickly screen out about 60% of common faults under non-powered conditions, including gate damage, temperature sensor failure, and package degradation.
[0077] The dynamic tests in this application are performed under simulated actual switching conditions, sequentially executing power-on and power-off function tests, and PWM dynamic switching tests to evaluate the electrical performance and switching characteristics of the IGBT.
[0078] Conductivity Verification: After applying a high-level drive signal and closing the main circuit, collect the collector-emitter saturation voltage drop Vce, gate-emitter voltage Vge, and collector current Ic under conduction conditions. If Vce exceeds 120% of the device's nominal value (e.g., a module rated at 2.1V actually measured >2.5V), it indicates an abnormally increased chip conduction loss, possibly caused by chip aging, bond wire detachment, or silicon wafer defects. If Vge is lower than 80% of the drive voltage (e.g., <12V under 15V drive), it reflects high drive circuit impedance or gate capacitor leakage.
[0079] Shutdown Function Verification: After the drive signal is set low, the collector-emitter voltage Vce(off) and collector leakage current Ice(off) in the shutdown state are detected. If Vce(off) does not stably rise to the power supply voltage (e.g., there is a voltage drop of >5%), it indicates incomplete shutdown, which may be caused by insufficient gate negative voltage or Miller capacitance effect. If Ice(off) exceeds the upper limit of leakage current specified in the datasheet (usually in the microamp level), it is directly determined to be collector-emitter insulation degradation, which poses a risk of thermal runaway.
[0080] PWM Dynamic Switching Characteristic Analysis: Under PWM drive with adjustable frequency (1-10kHz) and duty cycle, the transient waveform of the switch is analyzed through high-speed sampling. Key diagnostic features include: turn-on delay time and turn-off delay time; if they are extended by more than 30% compared to the nominal values, it indicates degradation of gate charge characteristics; collector voltage overshoot rate; if it exceeds 20% of the supply voltage, it suggests excessive parasitic inductance or failure of the snubber circuit; Miller plateau flatness; if the plateau disappears or is severely distorted, it is a typical manifestation of increased gate oxide interface traps and threshold voltage drift, indicating a decline in long-term reliability.
[0081] In one optional implementation, after obtaining the above data, a test report can be generated; the test report includes at least: the identification information of the target IGBT, the comparison results of the test values of static parameters and standard static parameter test values, the comparison results of the test values of dynamic parameters and standard dynamic parameter test values, the judgment conclusion of the target IGBT, and the test timestamp.
[0082] In one optional implementation, the IGBT detection device further includes a device protection unit; One end of the device protection unit is connected to the Arduino Uno controller, and the other end of the device protection unit is connected to the second power supply; The device protection unit is used to perform a stop operation when it detects hardware overcurrent, software overcurrent, or abnormal operation of the Arduino Uno controller.
[0083] Based on the same inventive concept, this application also provides Figure 5 The image shows a wind turbine converter IGBT testing system. Combined with... Figure 5 As shown, the wind turbine converter IGBT testing system 500 provided in this application includes: a host computer 501 and an IGBT testing device 502; the IGBT testing device 502 includes a controller and a testing module; the testing module includes a first IGBT testing unit and a second IGBT testing unit; the testing module is communicatively connected to the controller; the testing module is connected to the target IGBT. The host computer 501 is used to respond to the test mode selection and start operation triggered by the user through the human-computer interaction interface, and send the first target test instruction to the IGBT detection device, or send the second target test instruction to the IGBT detection device. The IGBT testing device 502 is used to send a constant voltage drive signal to the first IGBT testing unit through the controller when receiving the first target test command; or, after receiving the second target test command, send a square wave drive signal to the second IGBT testing unit through the controller. The IGBT detection device 502 is further configured to obtain the static parameters of the target IGBT through the first IGBT detection unit after receiving the constant voltage drive signal; or, after the second IGBT detection unit receives the square wave drive signal, obtain the dynamic parameters of the target IGBT through the second IGBT detection unit; the static parameters include gate turn-on resistance, gate turn-off resistance, and temperature resistance; the dynamic parameters include collector-emitter voltage, gate-emitter voltage, collector current, and the real-time temperature of the target IGBT; The host computer 501 is also used to analyze the performance of the target IGBT based on the dynamic parameters or the static parameters.
[0084] In one optional implementation, the host computer 501 is further configured to generate a test report; the test report includes at least: the identification information of the target IGBT, the comparison results of the test values of static parameters and standard static parameter test values, the comparison results of the test values of dynamic parameters and standard dynamic parameter test values, the judgment conclusion of the target IGBT, and the test timestamp.
[0085] Based on the wind turbine converter IGBT performance testing method and apparatus provided in the foregoing embodiments, this application also provides a computer-readable storage medium storing a computer program thereon, which, when executed by a processor, implements some or all of the steps in the wind turbine converter IGBT performance testing method mentioned above.
[0086] Based on the wind turbine converter IGBT performance testing method and apparatus provided in the foregoing embodiments, this application also provides an electronic device, including: A memory on which computer programs are stored; A processor is configured to execute the computer program in the memory to implement some or all of the steps in the wind turbine converter IGBT performance testing method provided in the foregoing embodiments.
[0087] The above description is merely one specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.
Claims
1. A method for testing IGBTs in wind turbine converters, characterized in that, An IGBT testing device is used; the IGBT testing device includes a controller and a testing module; the testing module includes a first IGBT testing unit and a second IGBT testing unit. The detection module is communicatively connected to the controller; The detection module is connected to the target IGBT; the method includes: In response to a first target test command to test the target IGBT, a constant voltage drive signal is sent to the first IGBT detection unit through the controller; or, in response to a second target test command to test the target IGBT, a square wave drive signal is sent to the second IGBT detection unit through the controller. After the first IGBT detection unit receives the constant voltage drive signal, it acquires the static parameters of the target IGBT; or, after the second IGBT detection unit receives the square wave drive signal, it acquires the dynamic parameters of the target IGBT. The static parameters include gate turn-on resistance, gate turn-off resistance, and temperature resistance; the dynamic parameters include collector-emitter voltage, gate-emitter voltage, and collector current. The performance of the target IGBT is analyzed based on the dynamic parameters or the static parameters.
2. The method according to claim 1, characterized in that, The first IGBT detection unit includes: an Arduino Uno controller, a first ADS1115 digital-to-analog converter, and three reference resistors; the three reference resistors include a first reference resistor, a second reference resistor, and a third reference resistor; The Arduino Uno controller is connected to the first ADS1115 digital-to-analog converter via an I2C bus; The first terminal of the first reference resistor, the first terminal of the second reference resistor, and the first terminal of the third reference resistor are all connected to the first pin of the Arduino Uno controller; the first pin is used to output zero volts. The second terminal of the first reference resistor is connected to the first target pin of the target IGBT; the second terminal of the second reference resistor is connected to the second target pin of the target IGBT; the second terminal of the first three reference resistors is connected to the third target pin of the target IGBT; the first target pin is the gate of the target IGBT; the second target pin is the emitter of the target IGBT; the third target pin is the temperature detection terminal of the target IGBT. The fourth, fifth, and sixth target pins of the target IGBT are all connected to the GND pin of the first ADS1115 digital-to-analog converter, and also to the AIN3 pin of the first ADS1115 digital-to-analog converter, and to the 5V output pin of the Arduino Uno controller; the fourth target pin is the common drive terminal of the target IGBT corresponding to the gate; the fifth target pin is the common power terminal of the target IGBT corresponding to the emitter; the sixth target pin is the common terminal of the target IGBT temperature sensor. The second end of the first reference resistor is connected to the AIN0 pin of the first ADS1115 digital-to-analog converter; the second end of the second reference resistor is connected to the AIN1 pin of the first ADS1115 digital-to-analog converter; and the second end of the third reference resistor is connected to the AIN2 pin of the first ADS1115 digital-to-analog converter.
3. The method according to claim 2, characterized in that, The step of obtaining the static parameters of the target IGBT through the first IGBT detection unit includes: The Arduino Uno controller outputs a five-volt voltage to the three reference resistors. The first ADS1115 digital-to-analog converter acquires the first voltage value of the second terminal of the first reference resistor relative to the fourth target pin, the second voltage value of the second terminal of the second reference resistor relative to the fifth target pin, and the third voltage value of the second terminal of the third reference resistor relative to the sixth target pin. Based on the first voltage value and the known resistance value of the first reference resistor, the static resistance corresponding to the first target pin is calculated using Ohm's law and used as the gate turn-on resistance; Based on the second voltage value and the known resistance value of the second reference resistor, the static resistance corresponding to the second target pin is calculated using Ohm's law and used as the gate turn-off resistance; Based on the third voltage value and the known resistance value of the third reference resistor, the static resistance corresponding to the third target pin is calculated using Ohm's law, and used as the temperature resistance.
4. The method according to claim 1, characterized in that, The second IGBT detection unit includes: the Arduino Uno controller, the second ADS1115 digital-to-analog converter, the IR2110 driver chip, the first relay, the second relay, the shunt resistor, the load resistor, the first power supply, and the second power supply; The Arduino Uno controller is connected to the second ADS1115 digital-to-analog converter via an I2C bus. The GND pin and AIN3 pin of the second ADS1115 digital-to-analog converter are both connected to the output five-volt voltage pin of the Arduino Uno controller; The AIN0 pin of the second ADS1115 digital-to-analog converter is connected to the first target node; the first target node is a point on the connection line between the second end of the first voltage divider resistor and the first end of the second voltage divider resistor; the first end of the first voltage divider resistor is connected to one end of the CCU of the target IGBT, and the second end of the second voltage divider resistor is connected to one end of the CEU of the target IGBT. The AIN1 pin of the second ADS1115 digital-to-analog converter is connected to the second target node; the second target node is a point on the connection line between the second end of the third voltage divider resistor and the first end of the fourth voltage divider resistor; the first end of the third voltage divider resistor is connected to one end of the first AGU of the target IGBT; the second end of the fourth voltage divider resistor is connected to one end of the AEU of the target IGBT. The AIN2 pin of the second ADS1115 digital-to-analog converter is connected to the third target node; the third target node is the intersection point with the first end of the shunt resistor, one end of the AEU, one end of the BEU, and one end of the CEU; The second end of the shunt resistor is connected in series with the second relay, the second power supply, the first relay, and the second end of the load resistor; the first end of the load resistor is connected to the fourth target node; the fourth target node is the intersection of one end of the CCU, one end of the BCU, and one end of the ACU of the target IGBT. The positive terminal of the first power supply is connected to the VCC pin of the IR2110 driver chip and to the gate drive signal input terminal in the target IGBT; the negative terminal of the first power supply is connected to the GND pin of the IR2110 driver chip. The HO pin of the IR2110 driver chip is connected to the gate of the target IGBT, and the VS pin of the IR2110 driver chip is connected to the emitter of the target IGBT; the PWM input pin of the IR2110 driver chip is connected to the Arduino Uno controller. The first digital port of the Arduino Uno controller is connected to the first relay; the second digital port of the Arduino Uno controller is connected to the second relay.
5. The method according to claim 4, characterized in that, The step of obtaining the dynamic parameters of the target IGBT through the second IGBT detection unit includes: The first relay is closed by controlling the first digital input port of the Arduino Uno controller, and the second relay is closed by controlling the second digital input port of the Arduino Uno controller. The Arduino Uno controller sends a high-level signal to the PWM input pin of the IR2110 driver chip to drive the target IGBT into the conduction state. After the target IGBT enters the conduction state, the collector-emitter voltage, gate-emitter voltage, and collector current of the target IGBT are acquired by the second ADS1115 digital-to-analog converter as the first dynamic data. The first dynamic data is used to verify the conduction function of the target IGBT. The Arduino Uno controller sends a low-level signal to the PWM input pin of the IR2110 driver chip to drive the target IGBT into the off state. After the target IGBT enters the off state, the collector-emitter voltage, gate-emitter voltage, and collector current of the target IGBT are acquired by the second ADS1115 digital-to-analog converter as second state data. The second dynamic data is used to verify the turn-off function of the target IGBT.
6. The method according to claim 4, characterized in that, The step of obtaining the dynamic parameters of the target IGBT through the second IGBT detection unit includes: Keep both the first relay and the second relay in the closed state; The target square wave is configured through the PWM pin of the Arduino Uno controller and sent to the PWM input of the IR2110 driver chip; the frequency of the target square wave is between 500Hz and 20kHz, and the duty cycle of the target square wave is between 0% and 100%. After receiving the target square wave, the target IGBT collects the collector-emitter voltage, gate-emitter voltage, and collector current of the target IGBT during the PWM cycle through the second ADS1115 digital-to-analog converter, as the third dynamic data; the third dynamic data is used to verify the dynamic response characteristics of the target IGBT under actual operating conditions.
7. The method according to claim 5, characterized in that, The IGBT detection device also includes a device protection unit; One end of the device protection unit is connected to the Arduino Uno controller, and the other end of the device protection unit is connected to the second power supply; The device protection unit is used to perform a stop operation when it detects hardware overcurrent, software overcurrent, or abnormal operation of the Arduino Uno controller.
8. The method according to claim 4, characterized in that, The ratio of the first voltage divider resistor to the second voltage divider resistor is 10:1; the ratio of the third voltage divider resistor to the fourth voltage divider resistor is 10:
1.
9. A wind turbine converter IGBT testing system, characterized in that, The system includes a host computer and an IGBT detection device; the IGBT detection device includes a controller and a detection module; the detection module includes a first IGBT detection unit and a second IGBT detection unit; the detection module is communicatively connected to the controller; the detection module is connected to the target IGBT. The host computer is used to respond to the test mode selection and start operation triggered by the user through the human-computer interaction interface, and send the first target test instruction to the IGBT detection device, or send the second target test instruction to the IGBT detection device. The IGBT detection device is used to send a constant voltage drive signal to the first IGBT detection unit through the controller upon receiving the first target test command. Alternatively, upon receiving the second target test command, the controller sends a square wave drive signal to the second IGBT detection unit. The IGBT detection device is further configured to, after the first IGBT detection unit receives the constant voltage drive signal, obtain the static parameters of the target IGBT through the first IGBT detection unit; or, after the second IGBT detection unit receives the square wave drive signal, obtain the dynamic parameters of the target IGBT through the second IGBT detection unit; the static parameters include gate turn-on resistance, gate turn-off resistance, and temperature resistance; the dynamic parameters include collector-emitter voltage, gate-emitter voltage, collector current, and the real-time temperature of the target IGBT; The host computer is also used to analyze the performance of the target IGBT based on the dynamic parameters or the static parameters.
10. The apparatus according to claim 9, characterized in that, The host computer is also used to generate a test report; the test report includes at least: the identification information of the target IGBT, the comparison results of the test values of static parameters and standard static parameter test values, the comparison results of the test values of dynamic parameters and standard dynamic parameter test values, the judgment conclusion of the target IGBT, and the test timestamp.