Electronic component and method for manufacturing an electronic component

Abstract

An electronic component (10) includes a blank (20) and a glass film (51) covering an outer surface (21) of the blank (20). The outer surface (21) of the blank (20) has a portion depressed relative to the surroundings, i.e., a recess (24). The glass film (51) includes an organosilane compound. The glass film (51) has a plurality of voids (53) inside. When the glass film (51) is observed in cross section, the ratio of the total area of the voids (53) to the cross-sectional area of the glass film (51) at the portion covering the recess (24) is 0.3% or more and 30% or less.

Description

Technical Field

[0001] This disclosure relates to electronic components and methods for manufacturing electronic components. Background Technology

[0002] The electronic component disclosed in Patent Document 1 includes a blank and a glass film. The glass film covers the outer surface of the blank. The glass film is formed by spraying a glass slurry onto the blank housed in a rotating drum. The thickness of the glass film is 5 to 30 μm.

[0003] Patent Document 1: Japanese Patent No. 4868019

[0004] In the electronic component disclosed in Patent Document 1, the outer surface of the blank sometimes has a recessed portion relative to the surrounding area. In the electronic component disclosed in Patent Document 1, a glass film fills the recessed portion. Therefore, the thickness of the glass film is greater in the portion covering the recess than in other portions. Thus, if the glass film has a thick portion, stress is easily generated in the thick portion with temperature changes, and cracks are easily generated in the portion of the glass film covering the recess. Summary of the Invention

[0005] To address the aforementioned issues, this disclosure provides an electronic component comprising: a blank; and a glass film covering the outer surface of the blank, the outer surface of the blank having a recessed portion relative to the surrounding area, the glass film being made of an organosilane compound, the glass film having a plurality of pores inside, and when viewed in cross-section using a section orthogonal to the outer surface of the blank, the ratio of the total area of ​​the plurality of pores in the portion of the glass film covering the recess to the cross-sectional area of ​​the glass film being 0.3% or more and 30% or less.

[0006] In addition, this disclosure provides a method for manufacturing an electronic component, comprising: a blank preparation step, preparing a blank; a blank feeding step, feeding the blank into a reaction vessel; a solution feeding step, feeding one or more materials selected from metal alkoxides and metal alkoxide precursors, and an organosilane compound into the reaction vessel; a film formation step, hydrolyzing and polycondensing the metal alkoxide by stirring in the reaction vessel to form a glass film on the outer surface of the blank; and a medium feeding step, feeding a medium into the reaction vessel, the medium being a powder with a hardness higher than that of the blank and having a particle size larger than the maximum size of a line segment connecting two points on the opening edge of a recess on the outer surface of the blank, the medium feeding step being performed before or during the film formation step.

[0007] It can suppress cracks in the recessed areas of the glass film. Attached Figure Description

[0008] Figure 1 It is a 3D diagram of an electronic component.

[0009] Figure 2 This is a side view of the electronic component.

[0010] Figure 3 It is along Figure 2 A sectional view along line 3-3 in the diagram.

[0011] Figure 4 This is an enlarged sectional view of the concave section.

[0012] Figure 5 This is an enlarged sectional view of the concave section.

[0013] Figure 6 This is a flowchart illustrating the manufacturing process of electronic components.

[0014] Figure 7 This is an explanatory diagram illustrating the manufacturing method of electronic components.

[0015] Figure 8 This is an explanatory diagram illustrating the manufacturing method of electronic components.

[0016] Figure 9 This is an explanatory diagram illustrating the manufacturing method of electronic components.

[0017] Figure 10 This is an explanatory diagram illustrating the manufacturing method of electronic components.

[0018] Figure 11 This is an explanatory diagram illustrating the manufacturing method of electronic components. Detailed Implementation

[0019] <An Implementation of the Electronic Component>

[0020] Hereinafter, one embodiment of the electronic component will be described with reference to the accompanying drawings. Furthermore, the components are sometimes shown enlarged for ease of understanding. The dimensional ratios of the components may sometimes differ from those in the actual figures or other accompanying drawings.

[0021] (Overall composition)

[0022] like Figure 1 As shown, the electronic component 10 is, for example, a surface-mount type negative characteristic thermistor component mounted on a circuit board or the like. Furthermore, the negative characteristic thermistor component has the characteristic that its resistance decreases as the temperature rises.

[0023] The electronic component 10 includes a blank 20. The blank 20 is generally a quadrangular prism and has a central axis CA. Hereinafter, an axis extending along the central axis CA is designated as a first axis X. Additionally, one of the axes orthogonal to the first axis X is designated as a second axis Y. Furthermore, an axis orthogonal to both the first axis X and the second axis Y is designated as a third axis Z. Furthermore, one of the directions along the first axis X is designated as a first positive direction X1, and the direction opposite to the first positive direction X1 along the first axis X is designated as a first negative direction X2. Similarly, one of the directions along the second axis Y is designated as a second positive direction Y1, and the direction opposite to the second positive direction Y1 along the second axis Y is designated as a second negative direction Y2. Finally, one of the directions along the third axis Z is designated as a third positive direction Z1, and the direction opposite to the third positive direction Z1 along the third axis Z is designated as a third negative direction Z2.

[0024] The outer surface 21 of the billet 20 has six planes. Furthermore, the term "plane" as used here refers to a plane that can be observed as a plane when observing the billet 20 as a whole. That is, even minute irregularities or stepped differences that are not visible without magnification (e.g., a microscope) are presented as planes or curved surfaces. The six planes face different directions. The six planes are roughly divided into a first end face 22A facing the first positive direction X1, a second end face 22B facing the first negative direction X2, and four side faces 22C. The four side faces 22C are respectively a face facing the third positive direction Z1, a face facing the third negative direction Z2, a face facing the second positive direction Y1, and a face facing the second negative direction Y2.

[0025] The boundary portions of two adjacent planes and three adjacent surfaces on the outer surface 21 of the billet 20 are curved surfaces. That is, the corners of the billet 20 are R-shaped chamfers. Furthermore, in... Figure 1 as well as Figure 2 In this drawing, the outer surface 52 of the glass film 51, which will be described later, and the outer surface 21 of the blank 20 are considered to be the same and are marked with reference numerals.

[0026] like Figure 2 As shown, the dimension of the blank 20 along the first axis X is larger than its dimension along the third axis Z. Additionally, as... Figure 1 As shown, the dimension of the blank 20 along the first axis X is larger than the dimension along the second axis Y. Furthermore, the blank 20 is made of ceramic produced by firing a metal oxide composed of one or more materials selected from Mn, Fe, Ni, Co, Ti, Ba, Al, and Zn.

[0027] like Figure 3As shown, the electronic component 10 has two first internal electrodes 41 and two second internal electrodes 42. Both the first internal electrodes 41 and the second internal electrodes 42 are embedded inside the blank 20.

[0028] The first internal electrode 41 is made of a conductive material. For example, the first internal electrode 41 is made of palladium. The second internal electrode 42 is made of the same material as the first internal electrode 41.

[0029] The first internal electrode 41 is rectangular in shape. The main surface of the first internal electrode 41 is orthogonal to the second axis Y. The second internal electrode 42 is also rectangular in shape, the same as the first internal electrode 41. The main surface of the second internal electrode 42 is the same as the first internal electrode 41 and is orthogonal to the second axis Y.

[0030] The dimension of the first internal electrode 41 along the first axis X is smaller than the dimension of the blank 20 along the first axis X. Additionally, as... Figure 1 As shown, the dimension of the first internal electrode 41 along the third axis Z is approximately two-thirds of the dimension of the blank 20 along the third axis Z. The dimensions of the second internal electrode 42 in each direction are the same as those of the first internal electrode 41.

[0031] like Figure 3 As shown, the first internal electrode 41 and the second internal electrode 42 are located at different positions relative to each other in the direction along the second axis Y. That is, they are arranged in the order of first internal electrode 41, second internal electrode 42, first internal electrode 41, and second internal electrode 42 from the side 22C facing the second positive direction Y1 to the second negative direction Y2. In this embodiment, the distance between each internal electrode in the direction along the second axis Y is equal.

[0032] like Figure 1 As shown, the two first internal electrodes 41 and the two second internal electrodes 42 are all located at the center of the blank 20 along the direction of the third axis Z. On the other hand, as Figure 3 As shown, the first internal electrode 41 is positioned close to the first positive direction X1. The second internal electrode 42 is positioned close to the first negative direction X2.

[0033] Specifically, the end of the first internal electrode 41 on the first positive direction X1 side coincides with the end of the blank 20 on the first positive direction X1 side. That is, the end of the first internal electrode 41 on the first positive direction X1 side is exposed at the first end face 22A of the blank 20. Moreover, the end of the first internal electrode 41 on the first negative direction X2 side is located inside the blank 20 and does not reach the end of the blank 20 on the first negative direction X2 side. On the other hand, the end of the second internal electrode 42 on the first negative direction X2 side coincides with the end of the blank 20 on the first negative direction X2 side. That is, the end of the first internal electrode 41 on the first negative direction X2 side is exposed at the second end face 22B of the blank 20. Moreover, the end of the second internal electrode 42 on the first positive direction X1 side is located inside the blank 20 and does not reach the end of the blank 20 on the first positive direction X1 side.

[0034] like Figure 3 As shown, the electronic component 10 includes a glass film 51. The glass film 51 covers the outer surface 21 of the blank 20. In this embodiment, the glass film 51 covers all four sides 22C of the outer surface 21 of the blank 20. The main material of the glass film 51 is insulating glass. Therefore, the glass film 51 contains silicon dioxide. In addition, the glass film 51 contains an organosilane compound having a carbon chain with three or more carbon atoms. The organosilane compound has, for example, one or more functional groups selected from epoxy, mercapto, amino, vinyl, and methacrylic groups. Specifically, the organosilane compound is 3-epoxypropoxypropyltrimethoxysilane (hereinafter referred to as "GPTMS"). Furthermore, GPTMS has an epoxy group as a functional group.

[0035] like Figure 3 As shown, the electronic component 10 includes a first external electrode 61 and a second external electrode 62. Furthermore, in Figures 1-3 The first external electrode 61 and the second external electrode 62 are illustrated with double-dotted lines.

[0036] The first external electrode 61 has a first base electrode 61A and a first metal layer 61B. The first base electrode 61A is laminated on a portion of the outer surface 21 of the blank 20, including the first end face 22A. Specifically, the first base electrode 61A covers the first end face 22A of the blank 20 and covers a portion of the first positive direction X1 side of the four sides 22C from above the glass film 51. That is, the first base electrode 61A is a five-sided electrode. In this embodiment, the material of the first base electrode 61A is a mixture of organic resin and silver particles.

[0037] The first metal layer 61B covers the first base electrode 61A from the outside. Therefore, the first metal layer 61B is stacked on the first base electrode 61A. Although not shown in the figure, the first metal layer 61B has a double-layer structure of nickel layer and tin layer sequentially from the first base electrode 61A side. In addition, the first external electrode 61 is connected to the end of the first internal electrode 41 on the first positive direction X1 side.

[0038] The second external electrode 62 has a second base electrode 62A and a second metal layer 62B. The second base electrode 62A is stacked on a portion of the outer surface 21 of the blank 20, including the second end face 22B. Specifically, the second base electrode 62A covers the second end face 22B of the blank 20 and covers a portion of the first negative direction X2 side of the four sides 22C from above the glass film 51. That is, the second base electrode 62A is a five-sided electrode. In this embodiment, the material of the second base electrode 62A is a mixture of organic resin and silver particles.

[0039] The second metal layer 62B covers the second base electrode 62A from the outside. Therefore, the second metal layer 62B is stacked on the second base electrode 62A. Specifically, the second metal layer 62B is the same as the first metal layer 61B, and has a double-layer structure of nickel plating and tin plating. In addition, the second external electrode 62 is connected to the end of the second internal electrode 42 on the first negative direction X2 side.

[0040] The second external electrode 62 is located on side 22C and does not reach the first external electrode 61. It is disposed separately from the first external electrode 61 in the direction along the first axis X. Furthermore, on the side 22C of the blank 20, the first external electrode 61 and the second external electrode 62 are not stacked in the central portion along the first axis X, and the glass film 51 is exposed.

[0041] (concave)

[0042] like Figure 4 As shown, the outer surface 21 of the blank 20 has one or more recesses 24. Each recess 24 is a portion that is recessed towards the interior of the blank 20 relative to its surroundings. Furthermore, the aforementioned glass film 51 also covers the recesses 24 in the outer surface 21 of the blank 20. Moreover, the glass film 51 generally follows the shape of the recesses 24. That is, the outer surface 52 of the glass film 51 covering the recesses 24 is recessed towards the interior of the blank 20 relative to its surroundings. In addition, the recesses 24 are caused by the shedding of ceramic particles, cracks in the blank 20, and defects.

[0043] Furthermore, in this embodiment, the recess 24 is defined as a depression having a maximum depth HD that is at least 10 times the arithmetic mean roughness of the outer surface 21 of the blank 20. The maximum depth HD of the recess 24 refers to the depth of the deepest part of the recess 24. Specifically, the maximum depth HD of the recess 24 is calculated as follows. First, the blank 20 is ground in a direction orthogonal to the outer surface 21 of the blank 20. For example, grinding is performed by focused ion beam processing. Next, the ground cross-section of the blank 20 is photographed using an electron microscope or the like. The magnification of the electron microscope is, for example, 10,000x or more and 30,000x or less. Moreover, as Figure 4 As shown, in the photographed grinding profile, a tangent CL is drawn that is externally tangent to either of the outer surfaces 21 of the blank 20 sandwiching the recess 24. Furthermore, a portion of this tangent CL may coincide with the outer surface 21 of the blank 20. In this case, the length from the tangent CL to the inner surface of the recess 24 in a direction orthogonal to the tangent CL is defined as the depth of the recess 24. Next, the blank 20 is further ground from the above-described grinding profile at a predetermined photographing interval to obtain a new grinding profile of the blank 20. The photographing interval is, for example, 10 nm. The maximum depth of the same recess 24 in this new grinding profile is measured. This process of photographing the grinding profile of the blank 20 and measuring the maximum depth of the recess 24 is repeated. The maximum value among the maximum depths of the recess 24 obtained in each grinding profile is defined as the maximum depth HD of the entire recess 24. Furthermore, the maximum depth HD of the recess 24 calculated by this method is 0.3 μm or more and 10 μm or less.

[0044] Furthermore, the end of the central side of the recess 24 at the junction of the tangent CL drawn by the above method and the outer surface 21 of the blank 20 is designated as an opening edge 25. The maximum dimension L of the line segment LS connecting two points on the opening edge 25 of the recess 24 is 0.5 μm or more and 20 μm or less. In other words, when multiple line segments LS connecting two points on the opening edge 25 of the recess 24 are drawn, the dimension L of the longest line segment LS among these multiple line segments is 0.5 μm or more and 20 μm or less. Furthermore, in Figure 4 In the diagram, line segment LS is represented by a dashed line. Furthermore, line segment LS partially overlaps with a portion of the aforementioned tangent line CL.

[0045] The arithmetic mean roughness of the recess 24 in the outer surface 21 of the blank 20 is 6 nm or more and 500 nm or less. A preferred range for the arithmetic mean roughness of the recess 24 is 6 nm or more and 250 nm, and a more preferred range is 6 nm or more and 100 nm or less. Regarding the arithmetic mean roughness of the portion covering the recess 24, the range between the opening edges 25 of a recess 24, determined by the above method, and a range of 500 nm along the direction of the tangent CL, is defined as the measurement range. Furthermore, the arithmetic mean roughness of the glass film 51 covering the recess 24 within the above measurement range is calculated by image analysis. In addition to the above method, a laser microscope, a white interferometer, etc., can also be used to calculate the arithmetic mean roughness.

[0046] (Glass film covering the concave area)

[0047] The portion of the outer surface 21 of the blank 20, excluding the recess 24, is designated as a flat portion 26. At this time, the average thickness T1 of the glass film 51 covering the recess 24 is greater than the average thickness T2 of the glass film 51 covering the flat portion 26. However, the average thickness of the glass film 51 as a whole is 15 nm or more and 10 μm or less. Furthermore, the preferred range for the average thickness of the glass film 51 as a whole is 15 nm or more and 5 μm or less, and a more preferred range is 15 nm or more and 1 μm or less. The average thickness of the glass film 51 is calculated as follows: First, a cross-section of the blank 20 is photographed using an electron microscope. Regarding the photographed image, a measurement range of at least 10 μm along the direction of the outer surface 52 of the glass film 51 is defined. Then, the cross-sectional area of ​​the glass film 51 within this measurement range is calculated through image processing. Furthermore, the area of ​​the voids 53 (described later) is included in this cross-sectional area of ​​the glass film 51. Next, this cross-sectional area is divided by the length of the measurement range along the direction of the outer surface 52 of the glass film 51. Therefore, the average thickness of the glass film 51 within the measurement range is calculated. That is, the average thickness of the glass film 51 refers to the average thickness within the measurement range. Furthermore, when the thickness T1 of the glass film 51 at the portion covering the recess 24 is determined using the above method, the measurement range is determined for multiple recesses 24, so that the total measurement range is 10 μm or more.

[0048] (Gap)

[0049] like Figure 4As shown, the glass film 51 has multiple voids 53 inside. These voids 53 are cavities formed inside the glass film 51 during the film-forming step S18 of the manufacturing method described later. Therefore, the voids 53 do not include voids open on the outer surface 52 side of the glass film 51, but are cavities sealed inside the glass film 51. When viewed in cross-section using a cutting section orthogonal to the outer surface 21 of the blank 20 by the above method, the area of ​​each void 53 is 1 nm. 2 Above and 10000nm 2 The following applies. Furthermore, the preferred area range for each void 53 is 1 nm. 2 Above and 5000nm 2 The preferred range is 1nm. 2 Above and 2500nm 2 Furthermore, the area of ​​each gap 53 refers to the average value of the gaps 53 that can be observed in the above-described cross-sectional observation. That is, the area of ​​each gap 53 is the value obtained by dividing the total area of ​​the gaps 53 observed in the above-described cross-sectional observation by the number of gaps 53.

[0050] When performing cross-sectional observation using a section orthogonal to the outer surface 21 of the blank 20, the ratio of the total area of ​​the plurality of voids 53 to the cross-sectional area of ​​the glass film 51 at the covered recess 24 in the glass film 51 is 0.3% or more and 30% or less. A preferred range for this ratio is 0.5% or more and 20% or less, and a more preferred range is 1% or more and 10% or less. Hereinafter, the ratio of the total area of ​​the plurality of voids 53 to the cross-sectional area of ​​the glass film 51 in the case of cross-sectional observation using a section orthogonal to the outer surface 21 of the blank 20 will be referred to as porosity. Furthermore, the section orthogonal to the outer surface 21 of the blank 20 in this case refers to a polished section, for example, that can be observed using a scanning transmission electron microscope (STEM) employing energy-dispersive X-ray spectroscopy (EDX) when polishing the blank 20 by the method described above. That is, this polished section is an EDX image representing the EDX mapping data of the main components of the glass. In this cross-section, the porosity is calculated by dividing the total area of ​​the multiple voids 53 by the cross-sectional area of ​​the glass film 51 and converting it to a percentage. In addition, the "cross-sectional area of ​​the glass film 51" also includes the area of ​​the voids 53 in the above cross-section.

[0051] The porosity at the portion covering the recess 24 in the glass film 51 is higher than the porosity at the portion covering the flat portion 26 in the glass film 51. Specifically, the porosity at the portion covering the recess 24 in the glass film 51 is 0.3% or more and 30% or less, while the porosity at the portion covering the flat portion 26 in the glass film 51 is less than 0.3%. In this embodiment, no voids 53 were found in the flat portion 26, therefore, the porosity at the portion covering the flat portion 26 is 0%. It is presumed that this is caused by the voids 53 at the portion covering the flat portion 26 in the glass film 51 being crushed during the film-forming step S18 of the manufacturing method described later.

[0052] like Figure 5 As shown, when cross-sectional observation is performed using a cutting section orthogonal to the outer surface 21 of the blank 20 using the method described above, the shortest distance SD between the gap 53 and the outer surface 21 of the blank 20 is 15 nm or more. Furthermore, selecting one gap 53 from a plurality of gaps 53, assumes there are multiple line segments connecting two points on the outer edge of the gap 53. The line segment with the largest distance between the two points among these multiple line segments is designated as the first line segment W. Furthermore, the line segment passing through the midpoint of the first line segment W and orthogonal to the first line segment W is designated as the second line segment H. The size of the first line segment W is at least 1.01 times and less than 10 times the size of the second line segment H. Moreover, the lower limit of the size of the first line segment W is preferably at least 1.5 times the size of the second line segment H, more preferably at least 3 times. Furthermore, the upper limit of the size of the first line segment W is preferably less than 5 times the size of the second line segment H. In other words, the shape of the gap 53 is approximately rectangular or approximately elliptical.

[0053] (Manufacturing methods for electronic components)

[0054] Next, the manufacturing method of electronic component 10 will be described.

[0055] like Figure 6 As shown, the manufacturing method of electronic component 10 includes a blank preparation step S11, a chamfering step S12, a solvent addition step S13, and a catalyst addition step S14. Furthermore, the manufacturing method of electronic component 10 includes a blank addition step S15, a solution addition step S16, a dielectric addition step S17, a film formation step S18, and a drying step S19. Moreover, the manufacturing method of electronic component 10 includes a first curing step S20, an internal electrode exposure step S21, a conductor coating step S22, a second curing step S23, and a plating step S24.

[0056] First, a blank preparation step S11 is performed. In the blank preparation step S11, a rectangular blank 20 with six planes is prepared. That is, the blank 20 in this stage is the blank 20 before the R-beveling is performed. For example, first, multiple ceramic sheets that will become the blank 20 are prepared. The sheets are relatively thin plates. A conductive paste that forms the first internal electrode 41 is laminated on the sheets. The ceramic sheets that form the blank 20 are laminated on the conductive paste. A conductive paste that forms the second internal electrode 42 is laminated on the sheets. In this way, the ceramic sheets and the conductive paste are laminated. Moreover, by cutting them to a predetermined size, a blank 20 as an unfired laminate is formed. Then, the unfired blank 20 is fired at a high temperature to prepare the blank 20.

[0057] Next, as Figure 6 As shown, the R-beveling machining step S12 is performed. In the R-beveling machining step S12, curved surfaces are formed at the boundary portions of two adjacent planes and three adjacent planes of the laminate prepared in the blank preparation step S11. For example, the corners of the laminate are R-beveling machined by tumble grinding, and curved surfaces are formed at the aforementioned boundary portions.

[0058] Next, as Figure 6 As shown, the solvent addition process S13 is performed. Figure 7 As shown, in the solvent addition step S13, 2-propanol is added as solvent 82 into the reaction vessel 81.

[0059] Next, as Figure 6 As shown, the catalyst feeding step S14 is performed. Figure 8 As shown, in the catalyst addition step S14, firstly, the solvent 82 in the reaction vessel 81 is stirred. Then, ammonia water is added into the reaction vessel 81 as an aqueous solution 83 containing the catalyst. In this embodiment, the catalyst is hydroxide ions, which function as a catalyst to promote the hydrolysis of the metal alkoxide described later.

[0060] Next, as Figure 6 As shown, the billet feeding process S15 is carried out. Figure 9 As shown, in the blank feeding process S15, multiple blanks 20 formed in the R chamfering process S12 are fed into the reaction vessel 81.

[0061] Next, as Figure 6 As shown, the solution addition process S16 is performed. Figure 10As shown, in the solution addition step S16, a solution, namely mixture 84, of a metal alkoxide and an organosilane compound is added into the reaction vessel 81. The metal alkoxide is liquid tetraethyl orthosilicate (hereinafter referred to as "TEOS"). TEOS is also sometimes referred to as tetraethoxysilane. The organosilane compound is liquid GPTMS. GPTMS is added at a weight ratio of 0.12 or more and less than 1 relative to TEOS. Specifically, GPTMS is added at a weight ratio of approximately 0.43 relative to TEOS.

[0062] The amount of the mixture 84 added in the solution addition step S16 is calculated based on the area of ​​the outer surface 21 of the blank 20 added in the blank addition step S15. Specifically, firstly, for each blank 20, the amount of mixture 84 required to form a glass film 51 covering the outer surface 21 of that blank 20 is calculated. The total amount of mixture 84 required is calculated by multiplying this amount by the number of blanks 20 added in the blank addition step S15.

[0063] Next, as Figure 6 As shown, the medium introduction process S17 is performed. Figure 11 As shown, in the medium input step S17, medium 85 is input into the reaction vessel 81. Medium 85 is sometimes referred to as spherical particles. Medium 85 is a powder with a hardness higher than that of the blank 20. Furthermore, the particle size of medium 85 is larger than the maximum size L of the line segment connecting two points on the opening edge 25 of the recess 24 on the outer surface 21 of the blank 20. Specifically, the particle size of medium 85 is 0.05 mm or more and 5.0 mm or less. In addition, the hardness is the so-called indentation hardness, for example, expressed by Vickers hardness. When a diamond indenter is pressed into the sample, the Vickers hardness is calculated by the area of ​​the indentation applied to the sample.

[0064] In this embodiment, the medium 85 is made of zirconium oxide. That is, the medium 85 is made of zirconium oxide (ZrO2). The zirconium oxide used as the medium 85 is sometimes referred to as zirconium oxide spheres. In addition, in the medium feeding step S17 of this embodiment, the particle size of the medium 85 fed into the reaction vessel 81 is greater than or equal to the size of a specific side of the blank 20. Specifically, the size of one side of the first end face 22A and the second end face 22B of the blank 20 is about 0.3 mm, and the particle size of the medium 85 is about 0.3 mm or more.

[0065] Furthermore, the total amount of medium 85 added in the medium feeding step S17 is at least 0.1 times the volume of the billet 20 added in the billet feeding step S15. This total amount of medium 85 is determined by setting the bath load of the billet 20 and the medium 85 to a predetermined value. Specifically, first, the total area of ​​the outer surface 21 of the billet 20 added in the billet feeding step S15 and the total surface area of ​​the medium 85 are calculated. The bath load is the value obtained by dividing this total value by the total amount of the mixture 84 added in the solution feeding step S16. The unit of bath load is, for example, "cm". 2 / L". Determine the amount of medium 85 added so that the bath load value is the specified value.

[0066] Next, as Figure 6 As shown, a film-forming process S18 is performed. In the film-forming process S18, a sol-like glass film 51 is formed on the outer surface 21 of the preform 20 using a liquid-phase method. Specifically, firstly, the solvent 82, which began in the solvent addition process S13, is stirred for a predetermined time. As a result, the metal alkoxide is hydrolyzed by hydroxide ions acting as a catalyst and undergoes polycondensation.

[0067] Furthermore, if the metal alkoxide is hydrolyzed and undergoes condensation polymerization, the metal alkoxide and organosilane compound adhere to the outer surface 21 of the preform 20. Through the condensation polymerization of these metal alkoxides, a sol-like glass film 51 is formed on the outer surface 21 of the preform 20. At this time, the metal alkoxide particles undergoing condensation polymerization on the outer surface 21 of the preform 20 grow into relatively large particles. Moreover, the grown metal alkoxide particles are bonded together with gaps of several nm or more between them. Therefore, voids 53 caused by these gaps are generated inside the newly formed sol-like glass film 51 on the outer surface 21 of the preform 20.

[0068] In the film-forming process S18, the solvent 82 continues to be stirred as described above. Therefore, the medium 85 introduced in the medium introduction process S17 collides with the glass film 51, which is condensed on the outer surface 21 of the preform 20. At the time of this film-forming process S18, the glass film 51 is in a sol state. Therefore, if the medium 85 collides with the glass film 51, the glass film 51 is crushed and deformed. As a result, the voids 53 generated inside the glass film 51 are crushed and filled. However, as described above, the particle size of the medium 85 is larger than the opening of the recess 24. Therefore, the voids 53 generated in the portion covering the flat portion 26 of the glass film 51 are crushed and filled over time, while the voids 53 generated in the portion covering the recess 24 of the glass film 51 remain even after the film-forming process S18. Therefore, as described above, the porosity at the portion covering the recess 24 in the glass film 51 is higher than the porosity at the portion covering the flat portion 26 in the glass film 51.

[0069] Furthermore, in the film-forming process S18, a sol-like glass film 51 is formed on the outer surface 21 of the preform 20 by a so-called roller method. That is, the reaction vessel 81, in which multiple preforms 20 are placed, is continuously stirred, so the preforms 20 also collide with each other. As a result, the aforementioned voids 53 generated inside the sol-like glass film 51 covering the flat portion 26 are also crushed due to the collisions between the preforms 20.

[0070] Next, a drying step S19 is performed. In the drying step S19, firstly, after the film-forming step S18, the preform 20 is removed from the reaction vessel 81. Then, the glass film 51 on the sol is dried. Thus, a gel-like glass film 51 is formed.

[0071] Next, the first curing process S20 is performed. In the first curing process S20, the blank 20 that has undergone the drying process S19 is fired at a temperature of 140 degrees Celsius or higher and 160 degrees Celsius or lower. Specifically, it is fired at a temperature of 150 degrees Celsius. As a result, the gel-like glass film 51 is cured. That is, the entire glass film 51 is cured. Furthermore, in this stage, the glass film 51 covers the entire area of ​​the outer surface 21 of the blank 20.

[0072] Next, the internal electrode exposure process S21 is performed. In the internal electrode exposure process S21, the first internal electrode 41 and the second internal electrode 42 are exposed by removing the glass film 51 covering the first end face 22A and the second end face 22B of the blank 20. In this embodiment, the entire area of ​​the first end face 22A and the entire area of ​​the second end face 22B of the blank 20 are targeted, and the glass film 51 is removed by laser cutting.

[0073] Next, a conductive coating process S22 is performed. In the conductive coating process S22, conductive paste is coated on a portion of the outer surface 21 of the blank 20 and a portion of the outer surface 52 of the glass film 51. Specifically, conductive paste is coated on two portions of the glass film 51 covering a portion of the first positive direction X1 side of the first end face 22A and the four sides 22C of the blank 20, and on a portion of the glass film 51 covering a portion of the second end face 22B and the four sides 22C of the blank 20 in the first negative direction X2.

[0074] Next, a second curing step S23 is performed. Specifically, in the second curing step S23, the conductive paste coated on the blank 20 is cured by heating. In this embodiment, the blank 20 is heated at approximately 200 degrees Celsius. Furthermore, the conductive paste coated in the conductive coating step S22 is fired to form the first base electrode 61A and the second base electrode 62A.

[0075] Next, a plating process S24 is performed. In plating process S24, a first metal layer 61B is formed on the surface of the first base electrode 61A by electroplating. Additionally, a second metal layer 62B is formed on the surface of the second base electrode 62A. Although not shown in the figure, a double-layer structure is achieved by electroplating the first metal layer 61B and the second metal layer 62B with nickel and tin. Thus, the electronic component 10 is formed.

[0076] (Effects of this implementation method)

[0077] (1) In the above embodiment, the glass film 51 has a plurality of voids 53. Moreover, when viewed in cross-section using a section orthogonal to the outer surface 21 of the blank 20, the porosity at the portion covering the recess 24 in the glass film 51 is 0.3% or more and 30% or less. Thus, by having a plurality of voids 53 in the glass film 51, even if stress is generated at the aforementioned portion of the glass film 51, each void 53 will buffer the stress. That is, the stress generated in the glass film 51 is dispersed by each void 53 and is not easily concentrated in a specific location. Therefore, cracks are less likely to occur at the portion covering the recess 24 in the glass film 51. Furthermore, by having a porosity of 0.3% or more, the effect of not easily causing cracks in the glass film 51 can be significantly obtained. On the other hand, since the porosity is 30% or less, the presence of voids 53 does not excessively impair the barrier properties of the glass film 51.

[0078] (2) In the above embodiment, the average thickness of the glass film 51 is 15 nm or more and 10 μm or less. If the thickness of the glass film 51 is 15 nm or more, even if the glass film 51 has gaps 53, moisture and the like are prevented from seeping into the gaps 53 and reaching the blank 20. That is, the barrier properties required for the glass film 51 can be ensured. In addition, when the thickness of the glass film 51 is 10 μm or less, the presence of gaps 53 in the glass film 51 can significantly suppress the generation of cracks. Therefore, the average thickness of the glass film 51 is preferably within the above range.

[0079] Furthermore, if the thickness of the glass film 51 is within the aforementioned range, it is less likely to interfere with other components besides the glass film 51 of the electronic component 10. For example, when an external electrode is formed on the outer surface 21 of the blank 20, the presence of the glass film 51 is less likely to become an obstacle.

[0080] (3) In the above embodiment, the thickness T1 of the portion of the glass film 51 covering the recess 24 is greater than the thickness T2 of the portion covering the flat portion 26. Because the glass film 51 covering the recess 24 is thicker, it is easier to prevent the infiltration of moisture, etc. Furthermore, even though the glass film 51 is thicker, since the glass film 51 has gaps 53, stress is less likely to concentrate in a specific area. For a glass film 51 with a larger thickness T1 covering the recess 24, a configuration related to the gaps 53 in the above embodiment is particularly preferable.

[0081] (4) In the above embodiment, the porosity of the portion covering the recess 24 in the glass film 51 is higher than that of the portion covering the flat portion 26 in the glass film 51. The portion covering the recess 24 in the glass film 51 is more prone to cracking than the portion covering the flat portion 26. By concentrating the voids 53 in the portion covering the recess 24 of the glass film 51, cracking in that portion can be significantly suppressed.

[0082] (5) In the above embodiment, the shortest distance SD between the gap 53 and the outer surface 21 of the blank 20 is 15 nm or more. When the distance between the gap 53 and the outer surface 21 of the blank 20 is close, the gap 53 and the tiny crack originating from the gap 53 may reach the outer surface 21 of the blank 20. By separating the gap 53 from the outer surface 21 of the blank 20 by 15 nm or more as described above, it is possible to suppress the gap 53 from reaching the blank 20 through the crack. Moreover, it is not easy for the gap to reach the blank 20 through the crack, so the adhesion of the glass film 51 to the blank 20 is not easily reduced.

[0083] (6) In the above embodiment, when observing the cross-section using a section orthogonal to the outer surface 21 of the blank 20, the area of ​​the void 53 is 1 nm. 2 Above and 10000nm 2 Below. If the area of ​​the vacancy 53 is greater than 1nm... 2 If the area is small, it will be difficult to alleviate the stress generated in the glass film 51. On the other hand, if the area of ​​the gap 53 is greater than 10000 nm... 2 If the area is too large, the blocking effect of the glass film 51 may decrease. Therefore, it is preferable that the area of ​​the gap 53 is within the above-mentioned numerical range.

[0084] (7) In the above embodiment, the size of the first line segment W is more than 1.01 times and less than 10 times the size of the second line segment H. To mitigate the stress generated in the glass film 51, it is preferable that the gaps 53 are uniformly distributed in the glass film 51. On the other hand, the greater the porosity, the lower the barrier properties of the glass film 51 may be. Therefore, by having the above-described elongated shape for the gaps 53, the volume of the gaps 53 in the glass film 51 is not significantly increased, and the distribution of the gaps 53 in the glass film 51 is made nearly uniform.

[0085] (8) In the above embodiment, the maximum dimension L of the line segment LS connecting the two points on the opening edge 25 of the recess 24 is 0.5 μm or more and 20 μm or less. Because the maximum dimension L of the line segment LS is 0.5 μm or more, metal alkoxide particles can easily adhere to the outer surface 21 of the blank 20, thus making it easier to form a glass film 51 in the recess 24. Furthermore, if the recess 24 is large, when the surface of the glass film 51 rubs against an external object, the object may become stuck in the recess 24, causing damage to the blank 20. Therefore, because the maximum dimension L of the line segment LS is 20 μm or less, the overall strength of the glass film 51 is less likely to decrease.

[0086] (9) In the above embodiment, the maximum depth HD of the recess 24 is 0.3 μm or more and 10 μm or less. If the maximum depth HD of the recess 24 is less than 0.3 μm, external objects may not easily come into contact with the portion of the glass film 51 covering the recess 24. As described above, since the recess 24 is caused by cracks and defects in the blank 20, the arithmetic mean roughness of the recess 24 is likely to be greater than that of the flat portion 26. With a larger arithmetic mean roughness, the frictional force applied to the outer surface 52 of the glass film 51 is likely to increase, and cracks may occur in the portion of the glass film 51 covering the recess 24. Therefore, it is preferable that the maximum depth HD of the recess 24 is 0.3 μm or more. Furthermore, if the maximum depth HD of the recess 24 is greater than 10 μm, the thickness T2 of the glass film 51 near the opening edge 25 of the recess 24 may be excessively small. In this case, cracks are likely to occur in the glass film 51 near the opening edge 25 of the recess 24. Therefore, the maximum depth HD of the recess 24 is preferably less than 10 μm.

[0087] (10) In the above embodiment, the arithmetic mean roughness of the recess 24 is 6 nm or more and 500 nm or less. The shape of the outer surface 52 of the glass film 51 follows the shape of the outer surface 21 of the blank 20 to some extent, so the arithmetic mean roughness of the outer surface 52 of the glass film 51 is also 500 nm or less. If the arithmetic mean roughness of the recess 24 is within the above-mentioned range, even if stress is generated in the glass film 51 due to friction between an external object and the recess 24, the generation of cracks can be significantly suppressed by the fact that the glass film 51 has gaps 53.

[0088] (11) In the above embodiment, the manufacturing method of the electronic component 10 includes a dielectric introduction step S17. The particle size of the dielectric 85 is larger than the maximum size L of the line segment LS connecting the two points on the opening edge 25 of the recess 24. Therefore, the dielectric 85 is less likely to come into contact with the portion of the glass film 51 covering the recess 24. Therefore, in the film formation step S18, a glass film 51 with a higher porosity in the recess 24 compared to the flat portion 26 can be formed.

[0089] (12) In the above embodiment, in the medium input step S17, zirconia balls are input into the reaction vessel 81 as medium 85. Zirconia has higher hardness and durability than other ceramics, so it is suitable as medium 85.

[0090] (13) In the recess 24 of the blank 20, particles that have fallen off the blank 20 are likely to remain as foreign matter. If foreign matter remains in the recess 24, it will remain in the glass film 51. Moreover, if the thermal expansion coefficient of the glass film 51 is different from that of the foreign matter, stress is likely to be generated near the interface between the glass film 51 and the foreign matter due to temperature changes. According to the above embodiment, even if foreign matter remains in the glass film 51 covering the recess 24, the stress can be mitigated by the gaps 53 in the glass film 51.

[0091] <Example of Change>

[0092] The above-described embodiments and the following modifications can be implemented in combination with each other within the scope of technical inconsistency.

[0093] Electronic component 10 is not limited to a negative characteristic thermistor component. For example, as long as there is some kind of wiring inside the blank 20, it can also be a thermistor component other than a negative characteristic, or it can be a multilayer capacitor component or an inductor component.

[0094] The material of the preform 20 is not limited to the examples of the above embodiments. For example, the material of the preform 20 may also be a composite of resin and metal powder, fiber, thermosetting resin, or other materials.

[0095] The shape of the blank 20 is not limited to the examples of the embodiments described above. For example, the blank 20 may also be a polygonal column shape other than a quadrilateral column shape with a central axis CA. In addition, the blank 20 may also be the core of a coiled inductor component. For example, the core may also be a so-called drum-shaped core. Specifically, the core may also have a columnar core portion and flange portions provided at each end of the core portion.

[0096] The boundary portion of adjacent planes on the outer surface 21 of the blank 20 may not be chamfered. In this case, there is no curved surface at that boundary portion.

[0097] The shapes of the first internal electrode 41 and the second internal electrode 42 can be any shapes that ensure electrical conduction with the corresponding first external electrode 61 and the second external electrode 62. Furthermore, the number of the first internal electrode 41 and the second internal electrode 42 is not limited; there can be one or more internal electrodes.

[0098] The configuration of the first external electrode 61 is not limited to the examples described in the above embodiments. For example, the first external electrode 61 may be composed solely of the first base electrode 61A, and the first metal layer 61B may not be a double-layer structure. Furthermore, the electronic component 10 may not have a first external electrode 61, but instead, the first internal electrode 41 may be exposed at the first end face 22A. That is, the end face of the first internal electrode 41 can also function as an external electrode. The same applies to the second external electrode 62.

[0099] The materials of the first internal electrode 41, the second internal electrode 42, the first external electrode 61, and the second external electrode 62 are not limited to the examples described in the above embodiments. Any material that ensures electrical conductivity between the first internal electrode 41 and the second internal electrode 42 and their respective first external electrodes 61 and 62 is acceptable.

[0100] The configuration of the glass film 51 is not limited to the examples of the embodiments described above. For example, the coverage area of ​​the glass film 51 can be appropriately changed along with the shape of the blank 20, the position of the first external electrode 61 and the second external electrode 62, etc. The glass film 51 only needs to cover at least the outer surface 21 of the recess 24 of the blank 20, and the porosity of the portion of the glass film 51 covering the recess 24 is within the range described above.

[0101] The maximum depth HD of the recess 24 can be less than 0.3 μm or greater than 10 μm. Furthermore, the maximum dimension L of the line segment LS connecting two points on the opening edge 25 of the recess 24 can be less than 0.5 μm or greater than 20 μm. Regardless of the size of the recess 24, the presence of a gap 53 in the portion of the glass film 51 covering the recess 24 helps to suppress the formation of cracks at that location.

[0102] The arithmetic mean roughness of the recess 24 in the outer surface 21 of the blank 20 can be less than 6 nm or greater than 500 nm. Regardless of the arithmetic mean roughness of the recess 24, the stress generated in the glass film 51 can be mitigated through the gap 53.

[0103] The average value of the thickness T2 of the glass film 51 covering the recess 24 can also be less than or equal to the average value of the thickness T1 of the glass film 51 covering the flat portion 26. Regardless of the relationship of the thickness of the glass film 51, at least the effect described in (1) is obtained.

[0104] When observing the cross-section using a cutting section orthogonal to the outer surface 21 of the blank 20, the area of ​​the void 53 can also be less than 1 nm. 2 It can also be greater than 10000nm 2 The preferred area of ​​the gap 53 can vary, for example, depending on the size of the blank 20, the average thickness of the glass film 51, etc. Even if the area of ​​the gap 53 is small, as long as the porosity at the location of the covering recess 24 of the glass film 51 is high within the range of 30% or less, the stress generated in the glass film 51 can be mitigated. Furthermore, even if the area of ​​the gap 53 is large, as long as it is small within the range of the aforementioned porosity of 0.3% or more, the barrier properties of the glass film 51 will not be excessively reduced.

[0105] The porosity at the portion covering the recess 24 in the glass film 51 can be lower than the porosity at the portion covering the flat portion 26. Alternatively, the porosity at the portion covering the flat portion 26 in the glass film 51 can be 0.3% or higher. For example, if the dielectric introduction step S17 is omitted in the manufacturing method of the electronic component 10, the porosity at the portion covering the flat portion 26 in the glass film 51 may become higher. In this case, by ensuring that the porosity at the portion covering the recess 24 in the glass film 51 is within a specified range, at least the effect described in (1) is obtained.

[0106] The size of the first line segment W can be 1 or more than 10 times the size of the second line segment H. Regardless of the shape of the gap 53, at least the effect described in (1) is obtained.

[0107] The solvent 82 added in the solvent addition step S13 is not limited to the examples of the above embodiments, and can be any liquid that can properly disperse metal alkoxides.

[0108] The solvent addition step S13 can also be performed after the catalyst addition step S14 and the preform addition step S15. It is sufficient that the solvent addition step S13 is performed before at least one of the solution addition step S16 and the catalyst addition step S14. Alternatively, the solvent addition step S13 can be omitted. In this case, for example, if the aqueous solution 83 containing the catalyst contains a considerable amount of water, the metal alkoxide reacts in the liquid phase. Furthermore, the aqueous solution 83 containing the catalyst can also be added while mixed with an organic solvent 82.

[0109] In the above embodiment, the aqueous solution 83 containing the catalyst is ammonia, and the catalyst is hydroxide ions, but the catalyst is not limited to this. If it is an alkaline aqueous solution, it can act as a catalyst to promote the hydrolysis of metal alkoxides, similar to the ammonia in the above embodiment. In addition, even acidic aqueous solutions can act as catalysts to promote the hydrolysis of metal alkoxides. Furthermore, even neutral aqueous solutions are acceptable as long as they contain substances that can promote hydrolysis, such as ions, and function as catalysts.

[0110] The catalyst is described as being added as an aqueous solution 83 containing the catalyst, but it is also possible to add a solid compound containing the catalyst and water separately into the reaction vessel 81. In this case, the catalyst is generated within the reaction vessel 81, which is considered as adding the catalyst into the reaction vessel 81. Alternatively, for example, a solid compound containing the catalyst can be added into the reaction vessel 81, and the water required for hydrolysis can also be moisture from the air.

[0111] Alternatively, the billet feeding step S15 can be performed before the catalyst feeding step S14. Furthermore, if the billet feeding step S15 is performed before the catalyst feeding step S14, the solution feeding step S16 can also be performed before both the catalyst feeding step S14 and the billet feeding step S15. It is sufficient that the billet feeding step S15 is performed before at least either the solution feeding step S16 or the catalyst feeding step S14.

[0112] In the solution addition step S16, it is not necessary to generate the metal alkoxide outside the reaction vessel 81 beforehand; the metal alkoxide can be generated inside the reaction vessel 81. For example, the metal alkoxide can also be generated through a chemical reaction between a metal salt and an alcohol. Therefore, in the solution addition step S16, the metal salt and alcohol, which are precursors to the metal alkoxide, can be added to the reaction vessel 81. That is, even if the metal alkoxide is generated inside the reaction vessel 81, it is considered as if the metal alkoxide has been added to the reaction vessel 81.

[0113] Metal alkoxides are not limited to TEOS. For example, the metal contained in a metal alkoxide can also be titanium, aluminum, etc. Furthermore, if the metal contained in the metal alkoxide is silicon, the reaction rate is slower compared to other metals, making it easier to control the reaction rate of the metal alkoxide to a constant level. Additionally, the alkoxy group in the metal alkoxide can also be methoxy, propoxy, etc. Moreover, the coordination number of the metal contained in the metal alkoxide is not limited to 4 coordination; it can also be 3 coordination or 2 coordination.

[0114] In the above embodiments, the organosilane compound is not limited to GPTMS. Furthermore, the organosilane compound may not have any of the epoxy, mercapto, amino, vinyl, or methacrylic groups. For example, the organosilane compound may also be 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-(2-aminoethyl)aminopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, (3-epoxypropoxypropyl)methyldimethoxysilane, 3-methacryloyloxypropyltrimethoxysilane, 3-methacryloyloxypropylmethyldimethoxysilane, 3-mercaptopropyltrimethoxysilane, n-propyltrimethoxysilane, isobutyltrimethoxysilane, n-hexyltrimethoxysilane, n-decyltrimethoxysilane, etc. In addition, by using X-ray photoelectron spectroscopy, Fourier transform infrared spectrophotometer, Raman spectroscopy, and energy dispersive X-ray analysis, it can be determined that the glass film 51 contains organosilane compounds.

[0115] The glass film 50 may replace the organosilane compound, or in addition, may contain one or more compounds selected from organotitanium compounds, organoaluminum compounds, and organozirconium compounds. These compounds also have the same function as organosilane compounds as coupling agents, and therefore can perform the same function as in the examples of the above embodiments.

[0116] In the solution addition step S16, the mixture 84 of the metal alkoxide and the organosilane compound does not need to be premixed. Alternatively, the metal alkoxide and the organosilane compound can be added separately to the reaction vessel 81 in a predetermined ratio. In this case, it is also considered that the mixture 84 is added to the reaction vessel 81.

[0117] In the solution addition step S16, the weight ratio of the organosilane compound added to the reaction vessel 81 relative to the metal alkoxide is not limited to the examples described in the above embodiments.

[0118] If the glass film 51 can be formed, the first curing step S20 can be performed in a sequence other than after the drying step S19. For example, in the second curing step S23, the glass film 51 can be cured together with the firing of the conductive paste.

[0119] The medium introduction step S17 can be performed either before or during the film-forming step S18. For example, during the preform introduction step S15, the preform 20 and the medium 85 can be introduced into the reaction vessel 81 simultaneously. However, if the medium 85 is introduced during the film-forming step S18, the liquid in the reaction vessel 81 must be stirred at least after the medium 85 has been introduced into the reaction vessel 81.

[0120] The medium 85 added in the medium addition process S17 may not be made of zirconium oxide. For example, the medium 85 may be made of aluminum spheroids or other ceramics. The medium 85 only needs to be a powder with a hardness higher than that of the blank 20, and the particle size must be larger than the maximum size L of the line segment connecting the two points on the opening edge 25 of the recess 24 on the outer surface 21 of the blank 20.

[0121] The particle size of the dielectric 85 added in the dielectric addition process S17 can be less than 0.05 mm or greater than 5.0 mm. As long as the particle size of the dielectric 85 is appropriately changed according to the size of the electronic component 10 being manufactured and the size of the recess 24.

[0122] In the medium input process S17, the total amount of medium 85 input into the reaction vessel 81 can also be less than 0.1 times the volume of the blank 20. The total amount of medium 85 input can be appropriately changed according to the design value of the bath load.

[0123] In the internal electrode exposure process S21, the method for removing the glass film 51 is not limited to laser-based cutting. For example, methods such as ion milling or grinding can also be used to expose the first internal electrode 41 and the second internal electrode 42.

[0124] In the internal electrode exposure process S21, the scope of glass film 51 removal is not limited to the examples of the above embodiments. At least, it is sufficient as long as the first internal electrode 41 and the second internal electrode 42 are electrically connected to their respective first base electrode 61A and second base electrode 62A.

[0125] The second curing step S23 is not limited to heating the conductive paste. For example, if a material that cures by ultraviolet irradiation is used as the conductive paste, it can also be cured by ultraviolet irradiation.

[0126] <Postscript>

[0127] The following describes the technical concepts derived from the above-described implementation methods and their variations.

[0128] [1] An electronic component comprising: a blank; and a glass film covering the outer surface of the blank, the outer surface of the blank having a recessed portion relative to the surrounding area, the glass film being made of an organosilicon compound, the glass film having a plurality of pores inside, and when viewed in cross-section using a section orthogonal to the outer surface of the blank, the ratio of the total area of ​​the plurality of pores in the portion of the glass film covering the recess to the cross-sectional area of ​​the glass film being 0.3% or more and 30% or less.

[0129] [2] According to the electronic components described in [1], the material of the glass film includes one or more materials selected from organosilicon compounds, organotitanium compounds, organoaluminum compounds and organozirconium compounds.

[0130] [3] According to the electronic components described in [1] or [2], the glass film has a plurality of the aforementioned voids inside.

[0131] [4] According to any one of the electronic components described in [1] to [3], when cross-sectional observation is performed using a cross-section orthogonal to the outer surface of the above-mentioned blank, the ratio of the total area of ​​the plurality of gaps in the portion of the glass film covering the above-mentioned recess to the cross-sectional area of ​​the above-mentioned glass film is 0.3% or more.

[0132] [5] According to any one of [1] to [4], when the electronic component is viewed in cross section using a section orthogonal to the outer surface of the blank, the ratio of the total area of ​​the plurality of gaps in the portion of the glass film covering the recess to the cross section area of ​​the glass film is 30% or less.

[0133] [6] According to any one of the electronic components described in [1] to [5], the average thickness of the glass film is 15 nm or more and 10 μm or less.

[0134] [7] According to any one of the electronic components described in [1] to [6], when the portion of the outer surface of the blank other than the recess is set as a flat portion, the average thickness of the glass film covering the recess is greater than the average thickness of the glass film covering the flat portion.

[0135] [8] According to any one of the electronic components described in [1] to [7], when the portion of the outer surface of the blank other than the recess is set as a flat portion, when cross-sectional observation is performed using a cross-section orthogonal to the outer surface of the blank, the ratio of the total area of ​​the plurality of gaps at the portion of the glass film covering the recess to the cross-sectional area of ​​the glass film is higher than the ratio of the total area of ​​the plurality of gaps at the portion of the glass film covering the flat portion to the cross-sectional area of ​​the glass film.

[0136] [9] According to any one of the electronic components described in [1] to [8], the shortest distance between the aforementioned gap and the outer surface of the aforementioned blank is 15 nm or more.

[0137]

[10] According to any one of the electronic components described in [1] to [9], when viewed in cross-section using a section orthogonal to the outer surface of the above-mentioned blank, the area of ​​each of the above-mentioned gaps is 1 nm. 2 Above and 10000nm 2 the following.

[0138]

[11] According to any one of [1] to

[10] , when the electronic component is observed in cross section using a section orthogonal to the outer surface of the blank, assuming there are multiple line segments connecting two points on the outer edge of the gap, when the line segment with the largest distance between the two points is designated as the first line segment, and the line segment that passes through the midpoint of the first line segment and is orthogonal to the first line segment is designated as the second line segment, the size of the first line segment is more than 1.01 times and less than 10 times the size of the second line segment.

[0139]

[12] According to any one of the electronic components described in [1] to

[11] , the maximum size of the line segment connecting the two points on the opening edge of the recess is 0.5 μm or more and 20 μm or less.

[0140]

[13] According to any one of the electronic components described in [1] to

[12] , the maximum depth of the recess is 0.3 μm or more and 10 μm or less.

[0141]

[14] According to any one of the electronic components described in [1] to

[13] , the arithmetic mean roughness of the recess in the outer surface of the blank is 6 nm or more and 500 nm or less.

[0142]

[15] A method for manufacturing an electronic component, comprising: a blank preparation step for preparing a blank; a blank input step for inputting the blank into a reaction vessel; a solution input step for inputting one or more materials selected from metal alkoxides and metal alkoxide precursors and an organosilane compound into the reaction vessel; a film formation step for hydrolyzing and polycondensing the metal alkoxide by stirring in the reaction vessel to form a glass film on the outer surface of the blank; and a medium input step for inputting a medium into the reaction vessel, the medium being a powder with a hardness higher than that of the blank and having a particle size larger than the maximum size of a line segment connecting two points on the opening edge of a recess on the outer surface of the blank, the medium input step being performed before or during the film formation step.

[0143] Explanation of reference numerals in the attached figures

[0144] 10…electronic component; 20…form; 21…outer surface; 51…glass film; 52…outer surface; 53…gap; T1…thickness; T2…thickness; W…first segment; H…second segment; 85…medium.

Claims

1. An electronic component, wherein, have: billet; and A glass film is used to cover the outer surface of the aforementioned blank. The outer surface of the aforementioned blank has a recessed portion relative to the surrounding area. The aforementioned glass film has internal voids.

2. The electronic component according to claim 1, wherein, The glass film is made of one or more materials selected from organosilicon compounds, organotitanium compounds, organoaluminum compounds, and organozirconium compounds.

3. The electronic component according to claim 1 or 2, wherein, The aforementioned glass film has multiple voids inside.

4. The electronic component according to any one of claims 1 to 3, wherein, When cross-sectional observation is performed using a section orthogonal to the outer surface of the blank, the ratio of the total area of ​​the plurality of pores to the cross-sectional area of ​​the glass film at the portion covering the recess is 0.3% or more.

5. The electronic component according to any one of claims 1 to 4, wherein, When cross-sectional observation is performed using a section orthogonal to the outer surface of the blank, the ratio of the total area of ​​the plurality of pores in the portion of the glass film covering the recess to the cross-sectional area of ​​the glass film is 30% or less.

6. The electronic component according to any one of claims 1 to 5, wherein, The average thickness of the aforementioned glass film is above 15 nm and below 10 μm.

7. The electronic component according to any one of claims 1 to 6, wherein, When the portion of the outer surface of the blank, excluding the aforementioned recess, is designed as a flat portion. The average thickness of the glass film covering the recessed portion is greater than the average thickness of the glass film covering the flat portion.

8. The electronic component according to any one of claims 1 to 7, wherein, When the portion of the outer surface of the blank, excluding the aforementioned recess, is designed as a flat portion. When observing the cross-section using a section orthogonal to the outer surface of the aforementioned blank, The ratio of the total area of ​​the plurality of gaps at the portion covering the recess in the glass film to the cross-sectional area of ​​the glass film is higher than the ratio of the total area of ​​the plurality of gaps at the portion covering the flat portion in the glass film to the cross-sectional area of ​​the glass film.

9. The electronic component according to any one of claims 1 to 8, wherein, The shortest distance between the aforementioned gap and the outer surface of the aforementioned blank is 15 nm or more.

10. The electronic component according to any one of claims 1 to 9, wherein, When observing the cross-section using a section orthogonal to the outer surface of the aforementioned blank, the area of ​​each of the aforementioned voids is 1 nm. 2 Above and 10000nm 2 the following.

11. The electronic component according to any one of claims 1 to 10, wherein, When observing a cross-section using a section orthogonal to the outer surface of the aforementioned blank, assuming there are multiple line segments connecting two points on the outer edge of the aforementioned gap, When the line segment with the largest distance between the two points is designated as the first line segment, and the line segment that passes through the midpoint of the first line segment and is orthogonal to the first line segment is designated as the second line segment, The size of the first line segment is more than 1.01 times and less than 10 times the size of the second line segment.

12. The electronic component according to any one of claims 1 to 11, wherein, The maximum dimension of the line segment connecting the two points on the opening edge of the aforementioned recess is 0.5 μm or more and 20 μm or less.

13. The electronic component according to any one of claims 1 to 12, wherein, The maximum depth of the aforementioned recess is greater than 0.3 μm and less than 10 μm.

14. The electronic component according to any one of claims 1 to 13, wherein, The arithmetic mean roughness of the aforementioned recesses on the outer surface of the blank is 6 nm or more and 500 nm or less.

15. A method for manufacturing an electronic component, wherein, have: The billet preparation process involves preparing the billet. In the preform feeding process, the above-mentioned preform is fed into the reaction vessel; In the solution addition process, one or more materials selected from metal alkoxides and metal alkoxide precursors, as well as an organosilane compound, are added into the above-mentioned reaction vessel. In the film-forming process, the metal alkoxide is hydrolyzed and polycondensed by stirring in the reaction vessel to form a glass film on the outer surface of the preform. as well as In the medium feeding process, a medium is fed into the reaction vessel. This medium is in the form of a powder with a hardness higher than that of the preform, and its particle size is larger than the maximum size of a line segment connecting two points on the opening edge of the recess on the outer surface of the preform. The above-mentioned medium introduction process is carried out before or during the above-mentioned film-forming process.

Images